THIN FILM STRUCTURE, SEMICONDUCTOR ELEMENT WITH IT AND SEMICONDUCTOR DEVICE WITH THE SEMICONDUCTOR ELEMENT
DE602022035409T2Active Publication Date: 2026-04-29SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2022-05-30
- Publication Date
- 2026-04-29
AI Technical Summary
Technical Problem
Silicon-based electronic devices face limitations in improving operating characteristics and reducing size, with subthreshold swing and power density issues hindering miniaturization, and existing ferroelectric materials struggle with stability and polarization efficiency.
Method used
A thin film structure incorporating a ferroelectric layer with a fluorite structure, aligned along a specific crystal direction, and surface-treated with fluorine to enhance ferroelectricity and stability, using compounds like HfO2 with dopants for improved semiconductor devices.
Benefits of technology
The solution achieves high ferroelectricity and stability, enabling low-power operation and miniaturization of semiconductor devices by enhancing polarization efficiency and material durability.
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