Method for setting up a CVD reactor

Abstract

The invention relates to a method for predicting a change in values λ i ) of a layer property or a local variable at a storage location (5') at which a layer is deposited on a substrate (7). If an individual treatment parameter (q i ) at a storage location (5') is changed, not only do values that are attributable to the individual parameters (q i ) at the storage location (5') change, but so do the values (λ i ) at other storage locations (5'). The method proposes depositing starting layers having individual starting parameters, formula (I), (I), and depositing test layers having test parameters, formula (I), (I), that are different therefrom. From detected starting values, formula (II), (II), and test values, formula (III), (III), a sensitivity matrix (S i,j ) can be formed of which the elements each indicate the influence of a change in each of the individual parameters (q i ) on each of the values (λ i ) of the layer property or local variable. By inverting the sensitivity matrix (S i,j ), correction parameters (Δq i ) can also be calculated in order to pre-set individual parameters (q i ), by means of which specified target values, formula (IV), (IV), can be achieved.

Description

[0001] Description Method for setting up a CVD reactor Technical field The invention relates to a method for predicting the change in target values ​​of a layer property of layers or layer sequences deposited on a plurality of substrates arranged at different storage locations in a process chamber, or of a local variable at the storage location that influences layer growth. The invention further relates to a method for setting up an apparatus for the simultaneous deposition of a layer or layer sequence on a plurality of substrates in a process chamber, wherein gases are fed into the process chamber according to predetermined treatment parameters and / or temperatures are set in the process chamber, wherein the treatment parameters contain individual parameters individually assigned to the various substrates and which can be individually changed.The invention further relates to a device with a control device for the simultaneous deposition of one layer or layer sequence on a plurality of substrates, as well as to a method for the simultaneous deposition of one layer or layer sequence on a plurality of substrates. State of the art: US 2018 / 0340259 A1 describes a method for the simultaneous deposition of multiple layers on a plurality of substrates. From a gas inlet element, different gases can be fed into a process chamber at different azimuthal positions. The floor of the process chamber is formed by a rotating susceptor on which several gases are arranged around the axis of rotation.

[0002] 31009PCT – November 7, 2023 arranged substrates are arranged. The substrates can be heated with zone heating devices, wherein the zones extend in the circumferential direction around the center of rotation. To optimize the layer homogeneity and in particular the layer thickness, a sensitivity matrix is ​​formed with regard to the treatment parameters for feeding energy into the heating zones, with which the treatment parameters can be changed. DE 102018101173 A1 describes a method for optimizing layer properties of a layer sequence deposited on a substrate. A coefficient matrix is ​​formed and an inverted matrix is ​​derived therefrom. WO 01 / 90434 A2 also describes the creation of a sensitivity matrix to optimize the deposition of layers on substrates. WO 02 / 092876 A1 describes an apparatus for depositing layers on substrates.In preliminary tests, the influence of changes in treatment parameters on the coating properties is determined. Correction values ​​can be calculated from an inverse function generated from this. US 2016 / 0336215 A1 describes a calibration method for correcting treatment parameters, in which a sensitivity matrix is ​​generated and an inverse matrix is ​​generated from it. DE 102019104433 A1 and DE 102020107517 A1 describe such a CVD reactor. A reactor forming the floor of a process chamber.

[0003] 31009PCT – November 7, 2023 The susceptor supports a plurality of substrates in a symmetrical arrangement around its center, which are coated by feeding process gases through a gas inlet located in the center of the process chamber. For this purpose, the susceptor is heated from below with a heating device. The heating device is a cooled RF coil. A tempering gas can be fed between the RF coil and the underside of the susceptor. The tempering gas is fed in such a way that it individually influences the net heat transfer from the heating device to the substrate. The heat flow to the individual substrates can thus be individually modified using an individual parameter. DE 102018124957 A1 also describes such a CVD reactor.A susceptor forming the floor of a process chamber supports, in a symmetrical arrangement around its center, a plurality of substrate holders resting on gas cushions and supporting one or more substrates. The gas cushion is generated by a tempering gas fed into a pocket of the susceptor that accommodates the substrate holder. The heat transfer from the heating device to the substrate is individually influenced by the height of the gas cushion or the thermal conductivity of the tempering gas. For this purpose, the tempering gas flows can be individually adjusted and modified using individual parameters. DE 102014104218 A1 and 102020123326 A1 describe a CVD reactor in which a purge gas can be individually fed into a pre-flow zone upstream of a substrate, the flow of which can be adjusted using individual parameters.It was observed that a change in one of these individual parameters not only results in a change in the value of a layer property.

[0004] 31009PCT – November 7, 2023 the changed individual parameter not only causes a change in the deposited layer or layer sequence, but also results in a change in the value of the layer property of a layer or layer sequence deposited on a different substrate. Layer properties are understood to mean any properties of a layer or layer sequence deposited on a substrate. A layer property can, for example, be a layer thickness determined by the growth rate of the layer, which can be measured on the deposited layer. Another layer property can be a layer composition. A layer can, for example, be doped or consist of more than two components, so that the layer composition can be characterized by the amount of dopant incorporated into the layer or by the ratio of elements forming the layer.The layer can be a single-crystal layer of a compound semiconductor having more than two components, for example, a GaAlN layer, where the ratio of Al to Ga can depend on the individual parameters. However, a layer property can also be a property of a layer sequence, for example when vertical-cavity surface-emitting lasers (VCSEL diodes) are manufactured. In this case, Bragg reflectors consisting of a large number of layers are deposited, in which the layer thickness and layer composition have a significant influence on the wavelength of the VCSEL diodes. It has been observed that even the slightest temperature differences on substrates arranged adjacently in the process chamber or the slightest differences in growth rates lead to intolerable deviations of the wavelengths from a target wavelength.A change in the cooling gas flow or in the gas cushion flow supporting a substrate holder influences the growth of layers on adjacent substrates because the individually changed gas flow can lead to pressure inhomogeneities in the process chamber or because dilution effects become effective. These cross-dependencies are considered disadvantageous.

[0005] 31009PCT – November 7, 2023 However, the individual parameters assigned to the storage locations can also be used to influence local variables at the storage location. Such local variables are understood to be technologically relevant environmental variables, such as a temperature, in particular a substrate temperature, a gas flow velocity, or a process gas partial pressure. If the individual parameter is used to specifically change the local variable at one storage location, this also leads to changes in the local variable at another storage location. The local variable influences the deposition of the layer in each case. Summary of the Invention The invention addresses the problem of specifying measures with which these cross-dependencies can be reduced.The aim is to provide a method for setting up a CVD reactor that minimizes deviations between values ​​of the layer properties deposited on adjacent substrates. The same applies to deviations between local variables. Furthermore, a method is needed that can predict how target values ​​of a layer property or a local variable at the storage location will change if one or more individual parameters are changed. The object of the invention is to further develop the method described in the prior art described at the outset for predicting changes in values ​​using a sensitivity matrix, to specify a method based thereon for setting up a device for the simultaneous deposition of layers or layer sequences at spatially different storage locations in a process chamber, and to characterize a corresponding device.

[0006] 31009PCT – November 7, 2023 The problem is solved by the invention specified in the claims, wherein the subclaims are not only advantageous developments of the invention specified in the independent claims, but also independent solutions to the problem. According to the invention, the method mentioned at the outset is further developed such that the treatment parameters are formed by parameters individually assigned to each of the storage locations. These individual parameters have the same effect at the storage locations assigned to them; for example, a change in the treatment parameter affects the property of a layer there in the same way as at any other of the storage locations. However, a change in the individual parameter also influences the values ​​of the layer property at another of the storage locations.The starting point of the invention is the recognition that a change in an individual parameter is not only a change in the value of a layer property of the layer or layer sequence deposited with the changed individual parameter, but that this change also affects the value of the layer property of a layer or layer sequence deposited on a different substrate, or the recognition that a change in a local quantity due to a local change in an individual parameter also affects the local quantities at other storage locations. The individual parameter can be any treatment parameter that can individually influence the value of a layer property of a substrate.The individual parameter can be the value of a purge gas flow, the value of a tempering gas flow, the mechanical position of a body influencing the temperature in the process chamber, the mass flow of a precursor, provided that this treatment parameter is for at least one.

[0007] 31009PCT – November 7, 2023 some of the substrates or for some substrate holders, each supporting at least one substrate. The mass flow of the precursor can be used to influence the layer composition and, in particular, the incorporation of dopant. The individual parameter can, in particular, be any mass flow or energy flow, such as heating power. The value of the layer property can be the above-mentioned layer thickness, which depends on the growth rate and growth time, a layer composition, or a wavelength dependent on the layer thickness and layer composition. The aim of the method is initially to be able to predict the extent to which a change in an individual parameter that primarily only has a local effect will also influence the target value of a layer property or a local variable at other storage locations.A further objective is to specify individual correction parameters, individual target parameters, or individual correction factors with which individual parameters, which are provided, for example, by a recipe, can be corrected in such a way that the above-mentioned cross-dependencies are largely reduced. First and foremost, it is proposed that preliminary tests be carried out in which the cross-reactions are quantified. Thus, in a first preliminary test, a starting layer or a starting layer sequence can be deposited simultaneously on a plurality of first substrates using a first set of individual starting parameters. The individual starting parameters preferably have the same value for all substrates or substrate holders. Values ​​of layer properties are determined for the layers or layer sequences deposited in this way.The determination of the values ​​of the layer properties can be performed outside the process chamber. However, it can also be carried out during deposition through an in-situ measurement, for example, by observing a light wavelength using a spectrometer. In one variant, the wavelength can be measured instead of the layer property.

[0008] 31009PCT – November 7, 2023 but also during the deposition of the layer, a local variable is measured at each storage location, for example a surface temperature of the substrate or a surface temperature of a substrate holder. In at least one second preliminary test, a test layer or test layer sequence is deposited on a plurality of second substrates, also simultaneously, using a second set of individual parameters, namely test parameters. The test parameters differ from the starting parameters by at least one value. Preferably, the values ​​of the test parameters have the same value except for one test parameter. The test parameters can differ from the starting parameters in that only one test parameter assigned to a single substrate or substrate holder differs from the starting parameter, and the remaining test parameters are identical to the starting parameters.With a symmetrical arrangement of substrates or substrate holders in the process chamber, it may be sufficient to conduct only a second preliminary test in which only a single test parameter differs from the starting parameters. Otherwise, it may be necessary to conduct a second preliminary test for each individual parameter in the set of individual parameters, in which a different, but preferably only one, test parameter differs from the starting parameter. The layers or layer sequences deposited in the one or more second preliminary tests are then measured outside the process chamber if necessary, whereby the test values ​​of the layer properties are determined. In this variant, instead of the layer property, the local parameter at each storage location can also be measured during the deposition of the layer, for example the surface temperature of the substrate or a surface temperature of the substrate holder.A sensitivity matrix is ​​then created from these test parameters and test values. An element of the sensitivity matrix can be a quotient of a difference value. If only a second preliminary test is performed with a symmetrical arrangement of the substrates or substrate holders, only a second preliminary test needs to be performed.

[0009] 31009PCT – November 7, 2023. This provides the elements of the sensitivity matrix of a column. The elements of the remaining columns are generated by cyclic swapping. To generate an element of the sensitivity matrix, a quotient can be formed. The quotient consists of a difference value and the parameter difference by which one test parameter differs from the start value. The difference value can be formed in various ways. In a preferred variant of the invention, a test response is calculated, whereby for this purpose a first difference between the start value and an average value of all start values ​​and a second difference between the test value and an average value of all test values ​​is formed. The difference value is then the difference between the first difference and the second difference. The difference value can also be a difference between the start value and the test value or contain at least one of the two average values.The sensitivity matrix created in this way forms the basis for predicting the change in the target values ​​that accompanies a variation in an individual parameter. For example, the sensitivity matrix can be used not only to predict the change in the target value at the storage location to which the individual parameter is locally assigned, for example a growth rate of a layer deposited there or a temperature there. The sensitivity matrix can also be used to predict the change in the value of the layer property or the local quantity at any other storage location, i.e. how the individual parameter assigned to another storage location influences the growth rate of the deposited layer or the temperature at the other storage location. The method described above provides the basis for a method for setting up an apparatus for the simultaneous deposition of layers or.

[0010] 31009PCT – November 7, 2023 Layer sequences on substrates arranged at local storage locations in a process chamber. In a subsequent step, the sensitivity matrix is ​​inverted. Using the inverted sensitivity matrix and the initial values ​​of the layer properties, the correction parameters, the individual target parameters, or the individual correction factors can then be formed. The individual parameters can be values ​​of gas flows or heat flows directed toward substrates arranged at different locations in the same process chamber. However, the individual parameters can also be positions of bodies that influence gas flows or heat flows within the process chamber and that are provided in large numbers, whereby these bodies are individually assigned to different substrates or substrate holders and can be individually relocated.According to a preferred embodiment of the invention, a susceptor arranged in the process chamber has a plurality of storage locations for substrates or substrate holders arranged rotationally symmetrically around a center, to which individual parameters are assigned, wherein these parameters influence a purge gas flow, a heat flow, or a process gas flow to the substrate holder or to the storage location. The individual correction parameters can be formed by multiplying the inverted sensitivity matrix by a vector containing correction values. The correction values ​​can be a difference between the starting value and a target value of the layer properties. For example, a target value can be a specific layer thickness, a specific layer composition, or a specific characteristic wavelength of a layer sequence, for example of a Bragg reflector.The target value can also be a local variable, such as a temperature or flow velocity measurable at the storage location, or a partial pressure of a process gas. In the first preliminary test, the individual parameters, for example, gas flows generating gas cushions or tempering gas flows to individual substrate holders, can have the same value. Using the method described above, correction values ​​are then first determined by calculating a difference 31009PCT – 7.11.2023 between the start values ​​and the target values ​​after the first preliminary test has been carried out. By subsequently determining a sensitivity matrix and inverting it, correction parameters can be generated. Using these correction parameters, the start parameters can be corrected such that the same layer properties are achieved in subsequent processes in which layers or layer sequences are deposited with the thus corrected start parameters.In particular, the method can also be used to bring the local variables to a uniform value or to adjust them individually. An individual correction factor can be the quotient of a sum of the starting parameter and the correction parameter on the one hand, and the starting value on the other. Such a correction factor can then be applied, in particular multiplied, to other individual parameters specified by a recipe in order to correct them in such a way that the tolerances of the layer properties are reduced. The method described above is used in particular for operating devices described in DE 102019104433 A1 or DE 102018124957 A1. The individual parameter can thus be a gas flow or a composition of a gas flow used to generate a gas cushion that supports a substrate holder that is heated from below by heating a susceptor with a heating device.However, the individual parameter can also be a gas flow or a composition of a gas flow, with which heat transport from a heating device to a susceptor carrying the substrate holder can be influenced. In embodiments of the invention, it can be provided that the change in an individual parameter changes not just one value, but two values ​​simultaneously. For example, a tempering gas flow can influence both a substrate temperature and the growth rate, or the growth rate and a layer composition simultaneously. The same applies to a gas flow forming a gas cushion for a rotationally driven substrate holder. The size of this gas flow can influence the temperature, the growth rate, or the layer composition.Several individual parameters can also be present simultaneously, influencing different values, such as temperature, growth rate, or layer composition. By repeatedly applying the previously described procedure in succession, correction parameters for several individual parameters can be created. However, it is also possible to begin with a starting parameter set and conduct preliminary tests with different test parameter sets, with qualitatively different individual parameters being changed in the different sets. Starting from an operating point of the system defined by the starting values, a sensitivity matrix can thus be generated that indicates the change in the value or several values ​​when one or another individual parameter is changed.The invention further relates to a device for depositing a layer or layer sequence on multiple substrates in a process chamber. The device may include valves and mass flow controllers, which in turn are assigned to a gas mixing device. A process chamber may be arranged in a reactor housing. In the process chamber, a susceptor may have multiple storage locations for a plurality of substrates. Using a gas inlet element, process gases provided by a gas mixing device can be fed into the process chamber according to a recipe stored in a control device. The control device is further configured to direct gas flows or heat flows independently of one another to different substrates or to one or more substrate-supporting substrate holders according to individual parameters specified by the recipe.The control device should have correction factors for correcting the individual parameters. These can be stored in a memory of the control device. The control device is further configured so that the individual parameters provided by the recipe are corrected with the 31009PCT – 7.11.2023 correction factors. The control device can have a microcomputer or a microprocessor that is programmable with a program. The invention also relates to such a program. The correction factors can also be elements of a matrix, whereby this matrix generally has only diagonal elements. The individual parameters can be multiplied by this correction matrix.The invention further relates to a method for depositing a layer or layer sequence on multiple substrates, in which the correction factors are determined in the manner described above and stored in the control device. When implementing the method, individual parameters are used that have previously been modified using the correction factors. The system for depositing layers on substrates operates with individual parameters. ^ , the change of which leads to a change in a value ^ ^ When carrying out the method according to the invention, the starting parameters ^^ ^ can be regarded as a vector. With these starting parameters ^^ ^, layer properties are determined in the first preliminary tests with the starting values ​​^^ ^, which can also be understood as a vector 31009PCT – 7.11.2023 The starting values ​​^^ differ from the ^ ^ target values ​​^ ^. The target values ​​are, for example, specifications, such as wavelengths, which a Bragg reflector should have as a property. As a rule, all target values ​​^^ ^ have the same value. However, the target values ​​can also be local variables at the storage locations where the substrates are stored in the process chamber. For example, it can be a temperature. The term target value is also generally understood to mean the value of a layer property or a local variable at the storage location that is established for a specific set of starting parameters (vector). The following describes an example of a method for determining correction values ​​Δ^ ^ can be determined. From these target values ​​and starting values, the correction values ​​Δ^ ^ calculated according to the following equation: ^^ ^ = ^^ ^ + Δ^ ^(3) The aim of the method is to determine target parameters ^^ ^ with which layers or layer sequences can be deposited whose layer properties, for example wavelengths, reach the target value ^^ ^. An intermediate goal of the method is to determine the correction parameter Δ^ ^ , with which the target parameters ^^ ^ can be calculated from the starting parameters ^^ ^, for example according to the following equation 31009PCT – November 7, 2023 The method according to the invention also includes a corresponding preliminary stage, in which initially only predictions about the changes in the values ​​can be made. In the second preliminary tests, test parameters ^^ ^ are used, which can also be viewed as a vector. In this case, all elements of the vector except one element are set to the same value of a uniform parameter ^ ^Only one element of the vector differs from all other elements of the vector by a parameter difference Δ^ from the uniform parameter ^ ^ . Preferably, the uniform parameter has the value of the start parameter ^ ^ ^ = ^ ^ (6) By measuring the layers or layer sequences deposited during the second preliminary tests, test values ​​^^ ^ are determined, which can also be interpreted as vectors. In an analogous manner, the local quantities can also be measured during the second preliminary tests. 31009PCT – November 7, 2023 If the device has a non-symmetrical arrangement of substrate storage locations, it may be necessary to conduct second preliminary tests corresponding to the number of storage locations, in each of which a different element of the test parameter vector differs from the uniform parameter. However, with a symmetrical arrangement, only one column of a test value matrix needs to be determined. The other columns are then obtained by conjoining the test values ​​in the manner described above, namely by cyclic swapping. From this test value matrix, a sensitivity matrix can be created in various ways ^ ^,^ be created, where each element of the sensitivity matrix ^ ^,^ represents a change in the test value when an individual parameter changes. In a first alternative, the sensitivity matrix is ​​created using ^ ^,^a mean of the starting values ​​^^ and a mean of the test values ​​are used. From these two mean values ​​^^ ^^ a test answer ^^^ ^ is formed as follows 31009PCT – 7.11.2023 With these test answers, the sensitivity matrix ^ ^,^ calculate as follows: Alternatively, the sensitivity matrix ^ ^,^ but also calculate as follows or the sensitivity matrix ^ ^,^ calculate as follows The test parameters ^^ ^ preferably correspond to the uniform parameter ^ ^ . Using a sensitivity matrix created in this way ^ ^,^ can make a prediction about a value ^ ^ be made approximately as follows 31009PCT – 7.11.2023 The sensitivity matrix ^ ^,^ links the correction values and correction parameter Δ^ ^ as follows Δ^ ^ = ^ ^,^ Δ^ ^(16) By inverting the sensitivity matrix ^ ^,^ into an inverted sensitivity matrix ^^^ ^ ,^ ^^^ ^ ,^ = ^^^(^ ^,^ ) (17) The correction parameters Δ^ ^ directly from the correction values ​​Δ^ ^ calculate Δ^ = ^^^ ^ ^,^ Δ^ ^ (18) From this, correction factors ^ ^ be calculated as follows With the correction factors ^ ^ ^ the target parameters ^ ^ as follows, where ^^ ^ is the starting parameter specified by the recipe. 31009PCT – 7.11.2023 With these correction factors ^ ^ In subsequent production processes, individual parameters specified according to a recipe can be multiplied in order to correct them. The invention also relates to a method with which a prediction of the change in two different target values ​​^^ ^ ^ , ^′ ^is to be made, where two or more target values ​​can each be a layer property of several substrates arranged at different storage locations in a process chamber or a local physical quantity influencing the layer growth, such as an environmental property at the storage location. It is also envisaged that a first target value ^^ ^ can be a layer property, for example a layer thickness or a wavelength of a Bragg mirror. The second target value ^′^ ^ can be a local quantity at the storage location, for example a temperature, for example a substrate temperature. To carry out such a variant of the method, the previously described method can be carried out several times in succession. In a first variant, it can be provided that in a first preliminary test with a set of starting parameters ^^ starting value ^ ^ ^ e ^ ^ , ^′ ^both the first value of the layer property or local quantity and the second value of the layer property of the local quantity are determined. In further preliminary tests, the individual parameters ^ ^ varied in the manner described above, so that a first sensitivity matrix ^ ^,^ which allows a prediction of the change of first values ​​^ ^ can be made if a first individual parameter ^ ^ changes, and a second sensitivity matrix ^′ ^,^ which can be used to predict the change of second values ​​^′ ^ can be made if a second individual parameter ^ ^With such a variant, for example, the change in a layer thickness or growth rate of the layer can be determined in relation to the thickness of a gas cushion and the change in a surface temperature of the substrate in relation to a tempering gas flow. It is also intended that two (or more) different parameters ^ ^ and ^ ^ simultaneously, but with varying degrees of influence on two or more different target values ​​^^ ^ ^ , ^′ ^These parameters can be, for example, a gas used to rotate a substrate holder (rotation gas flow) and a tempering gas, whereby both parameters can have varying degrees of influence on both the layer thickness and the temperature. The aim of this method is also to consider only the influence of several parameters on a target value, for example, on the layer thickness. For this purpose, a matrix ^ ^,^ for the gas generating the rotation and a matrix ^′ ^,^ for the tempering gas. Then, using a method (not covered by this procedure), the parameters of the tempering gas are determined / adjusted such that a desired substrate temperature profile is achieved under the given initial temperature deviation. Using the matrix ^′ ^,^The effect of the parameter change of the tempering gas on the target layer thickness is then predicted. This initially unintended and undesirable secondary effect of the tempering gas on the target layer thickness can then be used to determine the correction values ​​for the gas generating the rotation using the matrix ^^^ ^ ,^ in equation 18 by adding to the correction values ​​Δ^ ^be taken into account and minimized with the correction parameters of the rotation gas flows. It is therefore also planned that, in order to predict the change in the values ​​of the layer properties or the local size, a second test layer or second test layer sequence is deposited in one or more further third preliminary tests on a plurality of third substrates simultaneously with a third set of second test parameters assigned to a different individual parameter, which are different from the first test parameters. During the second preliminary tests, for example, the mass flow of the gas that creates the gas cushion on which the substrate holder rests or that causes the substrate holder to rotate can be changed. The value can be the layer thickness and / or the temperature. During the deposition of the second test layers, the mass flow of the tempering gas can be changed.Here, too, the layer thickness and / or temperature can be determined as a value. Second test values ​​for the same layer property, such as the layer thickness or the layer composition, are then measured on the second test layers or test layer sequences, or second local variables, such as the substrate temperature, are measured. The second sensitivity matrices ^′ are then derived from the second test values ​​for the layer property or the local variable. ^,^formed. In this way, predictions can be made as to the extent to which two different parameters, for example the mass flow of the gas generating the gas cushion or the mass flow of the tempering gas, may influence the same layer property or the same local variable to different degrees. However, it is also possible to carry out the previously described method several times in succession and to determine starting values ​​in a first preliminary test after each method step has been completed. Brief description of the drawings An exemplary embodiment of the invention is explained below with reference to the attached drawings. They show: 31009PCT - 7.11.2023 Fig. 1 a plan view of a susceptor 3 of a CVD reactor, Fig. 2 the section along the line II-II in Figure 1.Description of the Embodiments An embodiment of an apparatus for carrying out a method for coating, in particular, semiconductor substrates with semiconductor layers has a reactor housing 1 that can be evacuated and in which a process chamber 2 is located, and which can be made of stainless steel. Below an upper wall of the housing 1 is a process chamber ceiling 14, which in the exemplary embodiment can be cooled, for which purpose cooling channels form a cooling device 15. In the center of the process chamber 2 is a gas inlet element 9 with a gas outlet opening for the outlet of process gases. The process gases can be hydrides of the elements of main group V and organometallic compounds of elements of main group III. These are fed into the process chamber 2 from the central gas inlet element 9 together with a carrier gas, which can be hydrogen, for example.The process gas and the carrier gas flow through the process chamber 2 in a radial direction from the inside to the outside. A gas outlet element 10 extends around the outer edge of the susceptor 3. Exhaust gases can be pumped out of the process chamber 2 through this gas outlet element 10 using a vacuum pump (not shown). The floor of the process chamber 2, opposite the process chamber ceiling 14, is formed by an upper side 3' of the susceptor 3. On the upper side 3' of the susceptor 3, there are several storage locations 5', each for a substrate, wherein the storage locations 5' are arranged symmetrically around a center of the susceptor 3. It may also be possible for several substrates to be arranged on each of the storage locations 5'. In the embodiment shown in the figures, there are a plurality of pockets 4 which have a bottom into which a supply line 8 opens.In each pocket 4 there is a substrate holder 5 which supports a substrate 7. By feeding a gas into the supply line 8, a gas cushion 6 builds up between the underside of the substrate holder 5 and the bottom of the pocket 4, which keeps the substrate holder 5 suspended and additionally drives it to rotate about an axis. In other embodiments of the invention, the substrate 7 can also lie directly on the susceptor 3, so that the susceptor 3 only has a plurality of storage spaces for substrates 7. A sealing plate 12 extends beneath the underside 3'' of the susceptor 3. A gap 13 forms between the underside 3'' and the sealing plate 12. Supply lines 16, 17 open into the gap 13 at different radial positions. An opening 16' is located radially inside the circular arc line laid around an axis of rotation 20 of the susceptor 3 and running through the radially inner edges of the pockets 4.A second opening 17' of the supply line 17 is located below a pocket 4. In other embodiments of the invention, these openings 16', 17' need not be present, or only one of these openings 16', 17' needs to be present. A spiral coil forming a heating device 11 is located below the sealing plate 12. The coil can be used to generate an RF field that generates eddy currents in the susceptor 3, causing the susceptor 3 to heat up. The coil of the heating device 11 is hollow. A coolant can flow through the cavity of the heating device 11. In other embodiments of the invention, the heating device can also be a resistance heater with which the susceptor 3 is heated or a radiant heater with which the susceptor 3 is heated by thermal radiation.The supply lines 8, 16, 17 are connected to a gas mixing system having a mass flow controller 18 and valves 19, wherein the valves 19 and the mass flow controller 18 are controlled by a control device 22. The control device 22 can have a microcontroller or microprocessor in which a memory is arranged containing a program with which the mass flow controller 18 and the valves 19 are controlled according to a program also stored in the memory. In the exemplary embodiment, a gas flow can be individually fed through individual supply lines 8 into each of the five pockets, each of which supports a substrate holder 5 on a gas cushion 6. The control device 22 can thus individually adjust the gas cushions 6 of all substrate holders 5.Through the mass flow of the gas forming the gas cushion 6, the height of the gas cushion 6 and thus the distance of the substrate holder 5 from the bottom of the pocket 4 can be individually adjusted. The mass flow of this gas not only influences the temperature of the surface of the substrate 7 carried by the substrate holder 5. A change in the mass flow also leads to a dilution of the process gas above the substrate 7, since the process gas fed into the pocket 4 flows through the edge gap between the substrate holder 5 and the wall of the pocket 4 into the process chamber 2. This influences the growth rate of the layer deposited on the substrate 7. This results in layers with different layer thicknesses being deposited on the substrates. 31009PCT – 7.11.2023 By changing the temperature of the substrate 7, the layer composition of a ternary or quaternary semiconductor layer deposited on the substrate can change. In the exemplary embodiment, at least one gas supply line 16, 17 opens beneath each of the substrate holders 5, through which a gas can be fed into the gap 13. If the susceptor 3 is rotated about its axis 20 during operation, the gas can be fed through the openings 16', 17' in synchronization with the rotation of the susceptor 3. The gas flow through the gap 13 can be individually changed such that the heat conduction between the heated susceptor 3 and the cold coil 11 changes. The resulting change in heat flow changes the temperature of the substrate 7.Using the valves 19 and the mass flow controllers 18, a mixture of gases with different thermal conductivity properties can be fed into the supply lines 8, 16, 17, for example, an adjustable mixture of nitrogen and hydrogen. By selecting the mixing ratio, the heat transport by thermal conduction can be adjusted either toward the substrate holder 5 or away from the susceptor 3, individually below each of the substrates 7. Through an optional supply line 23, which opens radially inside the substrate 7 in the top side 3' of the susceptor 3 with an opening 23', another tempering gas can be fed in, which can also be a mixture of two gases with different thermal conductivity properties. Here, too, it is provided that each of the substrates 7 is individually assigned an opening 23', from which an individual gas mixture or an individual gas flow can be fed into the process chamber 2. 31009PCT – 7.11.2023 In a variant of the device or method, a reactive gas can also be fed into the orifice 23'. The invention relates both to devices having four of the previously described supply lines 8, 16, 17, 23, and to devices having only one or fewer than four of the previously described supply lines 8, 16, 17, 23. To carry out the method, it is generally sufficient if only one set of these supply lines is implemented. For the manufacture of VCSEL diodes, precise control of the growth rate and precise control of the material composition for each individual substrate 7 is of great importance. These variables have a direct influence on the wavelength of the light emitted by the diodes. The layer sequences deposited on the substrates 7 form Bragg mirrors. Here, the material composition, which is determined by the temperature, is a critical variable.Furthermore, the individual layer thickness, which is determined by the growth rate, is a critical factor. Even the smallest deviations between the individual wafers lead to faulty results in production. However, the method is not just limited to the production of layer sequences for forming a Bragg mirror, but also applies to the production of layers or layer sequences for other components. It has been discovered that changing one of the gas flows through the feed lines 8, 16, 17, 23 not only influences the material composition or the growth rate of the layer or layer sequence deposited on the respective associated substrate 7, but also, through cross-effects, the material composition or the growth rate on other substrates 7. 31009PCT – 7.11.2023 These gas flows or gas mixing ratios are referred to as individual parameters within this disclosure. The material composition or growth rate is referred to as value within this disclosure. One object of the invention is, among other things, to find target parameters ^^ ^ ^ for individual parameters specified by a recipe, such as gas flows or gas mixing ratios, in order to determine target values ​​^. ^for the material composition, the layer thickness, or in the case of VCSEL diodes, the wavelength. A method for setting up a CVD reactor with which layer sequences are deposited on the substrates 7, forming a Bragg mirror that has a uniform wavelength, if possible, is described. In a first preliminary test, uncorrected flows of a tempering gas are fed through at least one of the previously described feed lines 8, 17, 16, 23. For example, the following gas flows with a uniform parameter ^ ^ For example, the following gas flows are set with a uniform parameter ^ ^ set: subsequently measured, whereby the wavelength of the Bragg reflectors is determined. The following wavelengths are determined from starting values ​​^^ ^ 31009PCT – 7.11.2023 618.2 nm 615.3 nm ö 616.3 nm ÷ (22) 616.6 nm 617.7 nm øIn a second preliminary test, five more substrates are coated with a layer sequence, although the gas flows are not identical. At least one gas flow is reduced by a parameter difference Δ^. For example, the following test parameter set is used: 150 sccm 400 sccm 400 sccm 400 sccm è 400 sccm These substrates are also measured with regard to the wavelength of the Bragg reflection, whereby the following test values ​​^^ ^ are measured: 623.9 nm 613.5 nm ö 612.3 nm ÷ (24) 612.0 nm 610.9 nm øUsing equations 9 and 10, mean values ​​of the starting values ​​^^ and mean values ​​of the test values ​​^^ are then determined. Using these mean values ​​and the measured wavelengths, test responses ^^^ ^ are then determined according to equation 11. 31009PCT – 7.11.2023 During the deposition of the layer sequence in the second preliminary test, a gas flow of 400 sccm was changed by Δq to 150 sccm. One column of a sensitivity matrix ^ ^,^ then has the following form In the exemplary embodiment, the substrate holders 5 and the openings 16', 17', 8', 23' are arranged symmetrically to the rotation axis 20, so that it can be assumed that the change to an individual parameter assigned to one of the substrates 7 is the same as the change to the individual parameters assigned to each of the substrates 7. The other columns of the sensitivity matrix ^ ^,^can then be created by cyclic swapping as shown in the following table. SH 1 SH 2 SH 3 SH 4 SH 5 Sensitivity SH 1 -0.0322 0.0180 0.0093 0.0069 -0.0021 Sensitivity SH 2 -0.0021 -0.0322 0.0180 0.0093 0.0069 Sensitivity SH 3 0.0069 -0.0021 -0.0322 0.0180 0.0093 Sensitivity SH 5 0.0093 0.0069 -0.0021 -0.0322 0.0180 Sensitivity SH 5 0.0180 0.0093 0.0069 -0.0021 -0.0322 By forming an inverted sensitivity matrix ^^^ ^ ,^ can be calculated using the method described above and the correction values ​​Δ^ given in equation 19 ^ Correction parameter Δ^ ^ be calculated 31009PCT – 7.11.2023 17.4 sccm 24.7 sccm ø With these correction parameters Δ^ ^Target parameters ^^ ^ can then be set in the form of corrected flows to the mouths 8', 16', 17', 23' using the relationship given in equations 19 and 20. These correction values ​​Δ^ ^ and target parameters ^^ ^ can be stored in the memory of the control device 22. In a variant of the method, for example, after the first preliminary test, which has been carried out with the parameter vector specified in equation 21, a vector of second starting values ​​^′^ ^ can also be set up, while the first values the Bragg reflections, the second values ​​^′ ^ temperatures. After the second preliminary test, which was carried out using the test parameters specified in equation 23, for example, second test values ​​^′^ ^ can be determined. Analogous to the previously described procedure, a second sensitivity matrix ^′ ^,^After forming a second inverted sensitivity matrix, further correction values, correction parameters, etc. can be calculated using the method described above. In one embodiment of the invention, it can further be provided that a value , for example a Bragg reflection or a layer thickness or a temperature measured during the process, from two different individual parameters ^ ^ is influenced. For example, these values ​​can be ^ ^ be influenced by both a mass flow forming a gas cushion 6 and a mass flow of a tempering gas flowing through the gap 13. The values can be influenced to varying degrees by the various individual parameters ^ ^In this variant, second test values ​​^′^ ^ are also determined and, in an analogous manner, second sensitivity matrices ^′ ^,^ This allows predictions to be made as to the extent to which the various individual parameters ^ ^ the values may influence to varying degrees. By forming one or two inverted matrices ^^^ ^ ,^In addition, parameter optimization can also be carried out. The above statements serve to explain the inventions covered by the application as a whole, which each independently develop the prior art at least through the following combinations of features, whereby two, several, or all of these combinations of features can also be combined, namely: A method characterized in that, in a first preliminary test, a starting layer or starting layer sequence is deposited on a plurality of first substrates 7 simultaneously with a first set of individual starting parameters ^^ ^, that starting values ​​^^ ^ of the layer property are determined on the starting layers or starting layer sequences, or starting values ​​^^ ^ of the local quantity are measured during the deposition of the starting layers or starting layer sequences,that in one or more second preliminary tests on a plurality of second substrates 7 simultaneously with a second set of individual test parameters ^^ ^ a test layer or test layer sequence is deposited, that test values ​​^^ ^ of the layer property are determined on the test layers or test layer sequences or during the deposition of the 31009PCT – 7.11.2023 test layers or test layer sequences test values ​​^^ ^ of the local size are measured, and that at least from the test values, the layer property or the local size at least one sensitivity matrix ^ ^,^ whose elements each represent the influence of a change in each of the individual parameters ^ ^ on each of the values of the layer property or the local size. A method for setting up a device for the simultaneous deposition of layers or layer sequences on substrates 7 arranged at spatially different storage locations 5' in a process chamber 2, wherein according to the method according to claim 1 at least one sensitivity matrix ^ ^,^ is formed by inverting the sensitivity matrix ^ ^,^ an inverted sensitivity matrix ^^^ ^ ,^ is formed and with the inverted sensitivity matrix ^^^ ^ ,^ individual correction parameters , individual target parameters ^^ ^ or individual correction factors to correct the individual parameters ^ be formed ^ ^ in order to achieve specified target values ​​^ ^ of the values. A procedure characterized by the fact that the individual parameters ^ ^Values ​​of gas flows or heat flows directed to substrates 7 arranged at the various storage locations 5' in the same process chamber 2. A method characterized in that the device comprises a plurality of identically designed substrate holders 5, each carrying one or more substrates 7 and the individual parameters ^ ^influence a purge gas flow, a heat flow, or a process gas flow to the substrate holder 5. 31009PCT – November 7, 2023 A method characterized in that, when carrying out the first preliminary test, the individual starting parameters ^^ ^ have the same value. A method characterized in that, in the one or more second preliminary tests, only one of the individual test parameters ^^ ^ differs from all other individual test parameters ^^ ^ by a parameter difference Δ^.A method which is characterized in that the substrates 7 or the substrate holders 5 carrying the substrates 7 or the substrate holders 5 carrying the substrates 7 or the storage locations storing the substrates 7 are arranged symmetrically in the process chamber 2 and only a second preliminary test is carried out in which only one of the individual test parameters ^^ ^ differs from the other, identical individual test parameters ^^ ^ by a parameter difference Δ^, with the test values ​​^^ ^ of the layer properties obtained therefrom being used to determine a first column of the sensitivity matrix ^. ^,^ is formed and the remaining columns of the sensitivity matrix ^ ^,^ by cyclical exchange of the test values ​​^^ ^. A method characterized in that to form an element of the sensitivity matrix ^ ^,^a quotient of a difference value and a parameter difference Δ^ is used, where the difference value is a difference between the test value ^^ ^ ^ and a mean value ^ of the starting values ​​^ ^ , a difference between the test value ^^ and the ^ ^ m starting value ^ ^ or a difference between a difference of the test value ^^ ^ and a mean value ^ of the test values ​​^^ ^ ^ and the starting value ^ ^ and an average value ^ of the starting values ​​^^ ^. 31009PCT – 7.11.2023 A method characterized in that the individual correction parameters Δ^ ^ by multiplying the inverted sensitivity matrix ^^^ ^ ,^ with a correction value Δ^ ^ vector and / or that the individual correction value Δ^ ^ a difference between the starting value ^^ ^ and the target value ^^ ^ and / or that the individual correction factor ^ ^the quotient of a sum of the starting parameter ^^ and the correction parameter Δ^ ^ on the one hand and the starting value ^ ^ on the other hand. A method characterized by the fact that the individual parameter ^ ^ a gas flow or a composition of a gas flow with which a gas cushion 6 is generated, which carries a substrate holder 5, which is heated from below by heating a susceptor 3 with a heating device 11 and / or that the individual parameter ^ ^ a gas flow or a composition of a gas flow with which a heat transport between a temperature control device 11 and a susceptor 3 can be influenced and / or that the individual parameter ^ ^a gas flow of a process gas that contains elements that make up the deposited layer or layer sequence or that dope it. A method characterized in that by repeatedly applying the method according to one of the preceding claims, several sensitivity matrices ^ ^,^ for the same or different target values ​​^^ ^ and different individual parameters ^ ^ A method which is characterized in that to predict the change of second values ​​^′ ^the layer property of layers or layer sequences deposited on several substrates 7 arranged at different storage locations 5' in the process chamber 2 or a local variable influencing the layer growth, the starting values ​​^^ ^ obtained with the first set of individual starting parameters ^^ are used and in further one or more third preliminary tests on a plurality of third substrates 7 simultaneously with a third set of second test parameters ^ assigned to another individual parameter ^ ^which are different from the first test parameters ^^ ^, a second test layer or second test layer sequence is deposited, wherein second test values ​​^′^ ^ of the layer property are determined at the second test layers or second test layer sequences or second test values ​​^′^ ^ of the local quantity are measured during the deposition of the second test layers or second test layer sequences, and from the second test values ​​^′^ ^ of the layer property or the local quantity at least one second sensitivity matrix ^′ ^,^ whose elements each reflect the influence of a change in each of the other individual parameters ^ ^ to each of the second target values ​​^′^ ^ of the layer property or the local quantity. A method characterized in that in a first application of the method, the individual parameter ^′ ^is a gas flow with which a gas cushion supporting the local substrate holder 5 is generated, and the target value ^^ ^ is the layer thickness of the layer or at least one layer of the layer sequence, and that in a subsequent second application of the method, the individual parameter ^ ^ is a gas flow with which heat transport from a heating device 11 to the substrate 7 is influenced, and the target value ^′^ ^ is the temperature of the substrate 7 during deposition of the layer or the layer thickness of the layer or at least one layer of the layer sequence. 31009PCT – 7.11.2023 A device characterized in that in the control device 22, correction factors ^ ^ to correct the individual parameters ^ ^ are stored, with which the individual parameters provided by the recipe ^ ^A device characterized in that for determining the correction factors ^ ^ a sensitivity matrix ^ ^,^ or inverted sensitivity matrix ^^^ ^ ,^ according to one of the preceding claims. A method characterized in that the individual parameters ^ ^ with correction factors ^ ^corrected, which are determined in particular according to one of claims 1 to 12. A control program for controlling the valves 19 and mass flow controller 18 of a device according to one of claims 13 or 14 for carrying out the method according to claim 15. All disclosed features are essential to the invention (individually, but also in combination with one another). The disclosure content of the associated / attached priority documents (copy of the prior application) is hereby fully incorporated into the disclosure of the application, also for the purpose of incorporating features of these documents into claims of the present application. The subclaims characterize, even without the features of a referenced claim, with their features independent inventive developments of the prior art, in particular in order to make divisional applications based on these claims.The invention specified in each claim may additionally comprise one or more of the features specified in the above description, in particular those provided with reference numbers and / or in the list of reference numbers. The invention also relates to designs in which individual features mentioned in the above description are not implemented, in particular insofar as they are clearly dispensable for the respective intended use or can be replaced by other technically equivalent means. 31009PCT – November 7, 2023 List of reference numbers 1 Reactor housing 22 Control device 2 Process chamber ^. ^ Value 3 Susceptor ^′ ^ second value 3' top side ^^ ^ start value 3'' bottom side ^′^ ^ second start value 4 pocket ^^ ^ target value 5' storage location ^′^ ^ second target value 5 substrate holder ^^^ ^ test response 6 gas cushion Δ^ ^Correction value 7 Substrate ^^ ^ Test value 8 Supply line ^′^ ^ Second test value 8 Orifice ^ Mean value 9 Gas inlet element ^^ Mean value of the starting values ​​10 Gas outlet element 11 Heating device ^^ Mean value of the test values ​​12 Sealing plate ^ ^ individual parameter 13 gap ^^ ^ start parameter 14 process chamber ceiling ^^ ^ test parameter 15 cooling device ^′^ ^ second test parameter 16 supply line ^^ ^ target parameter 16' orifice Δ^ ^ Correction parameter 17 supply line ^ ^ uniform parameter 17' orifice Δ^ parameter difference 18 mass flow controller ^ ^,^ Sensitivity matrix 19 valve ^′ ^,^ second sensitivity matrix 20 rotation axis ^^^ ^ ,^ inverted " 21 axis of rotation ^ ^ Correction factor 31009PCT – November 7, 2023

Claims

Claims 1. Method for predicting the change of values ​​^^ ^ ^ a layer property of layers or layer sequences deposited on several substrates (7) arranged at different locations (5') in a process chamber (2) or a local variable influencing the layer growth at the storage location (5'), wherein gases are fed into the process chamber (2) with variable treatment parameters and / or temperatures in the process chamber (2) are adjusted in order to achieve the values ​​(^ ^ ) of the layer properties of the deposited layer or the local size, whereby in preliminary tests at least one sensitivity matrix (^ ^,^ ), whose elements each represent the influence of a change in each of the treatment parameters on each of the values ​​(^ ^) of the layer property or the local size, characterized in that the treatment parameters are determined by a parameter (^ ^ ) are formed, where the individual parameters (^ ^ ) at the storage locations (5') assigned to them each have the same effect on the layer property there or the local size there, whereby a change in one of the individual parameters (^ ^ ) also values ​​(^ ^) at other storage locations (5').

2. The method according to claim 1, characterized in that in a first preliminary test, a starting layer or starting layer sequence is deposited on a plurality of first substrates (7) simultaneously with a first set of individual starting parameters (^^ ^ ), that starting values ​​(^^ ^) of the layer property are determined at the starting layers or starting layer sequences, or that starting values ​​(^^ ^) of the local size are measured during the deposition of the starting layers or starting layer sequences, 31009PCT – 7.11.2023 that in a second preliminary test on a plurality of second substrates (7) simultaneously with a second set of individual test parameters (^^ ^ ) a test layer or test layer sequence is deposited, that test values ​​(^^ ^) of the layer property are determined on the test layers or test layer sequences or test values ​​(^^ ^) of the local quantity are measured during the deposition of the test layers or test layer sequences and that at least from the test values ​​(^^ ^) of the layer property or the local quantity the sensitivity matrix (^ ^,^ ) is formed.

3. A method for setting up a device for the simultaneous deposition of layers or layer sequences on substrates (7) arranged at different storage locations (5') in a process chamber (2), wherein according to the method according to claim 1 or 2 at least one sensitivity matrix (^ ^,^ ) is formed by inverting the sensitivity matrix (^^,^ ) an inverted sensitivity matrix ) and with the inverted sensitivity matrix (^^^ ^ ,^ ) individual correction parameters (Δ^ ^ ^ ), individual target parameters (^ ^ ) or individual correction factors for correcting the individual parameters (^ ) are formed in order to achieve the specified target values ​​(^ ^ ) of the values ​​(^ ^ ) to achieve.

4. Method according to one of the preceding claims, characterized in that the individual parameters (^ ^ ) values ​​of gas flows or heat flows directed toward substrates (7) arranged at the various storage locations (5') in the same process chamber (2). 31009PCT – 7.11.2023 5. Method according to one of the preceding claims, characterized in that the device has a plurality of identically designed substrate holders (5), each carrying one or more substrates (7) and the individual parameters (^ ^) influence a purge gas flow, a heat flow, or a process gas flow to the respective substrate holder (5).

6. Method according to one of claims 2 to 5, characterized in that when carrying out the first preliminary test, the individual starting parameters (^^ ^ ) have the same value among themselves.

7. Method according to one of claims 2 to 6, characterized in that in the one or more second preliminary tests, only one of the individual test parameters (^^ ^ ) differs from all other individual test parameters (^^ ^ ) by a parameter difference (Δ^). 8.Method according to one of claims 2 to 7, characterized in that the substrates (7) or the substrate holders (5) carrying the substrates (7) or the substrate holders (5) carrying the substrates (7) or the storage locations storing the substrates (7) are arranged symmetrically in the process chamber (2) and only a second preliminary test is carried out in which only one of the individual test parameters (^^ ^ ) differs from the other, mutually identical individual test parameters (^^ ^ ) by a parameter difference (Δ^), with the test values ​​obtained therefrom. ^ ) of the layer properties a first column of the sensitivity matrix (^ ^,^ ) and the remaining columns of the sensitivity matrix (^ ^,^ ) by cyclically swapping the test values ​​(^^ ^). 31009PCT – 7.11.2023 9. Method according to one of claims 2 to 8, characterized in that to form an element of the sensitivity matrix (^ ^,^ ) a quotient of a difference value and a parameter difference (Δ^) is used, where the difference value is a difference between the test value (^^) and a mean value (^) of the ^ ^ starting values ​​(^ ^ ), a difference between the test value (^^ ^) and the starting value (^^ ^) or a difference between a difference of the test value (^^ ^) and a mean value (^) of the test values ​​(^^) and the ^ ^ starting value (^ ^ ) and an average value (^) of the starting values ​​(^^ ^).

10. Method according to one of claims 3 to 9, characterized in that the individual correction parameters (Δ^ ^ ) by multiplying the inverted sensitivity matrix (^^^ ^ ,^ ) with a correction value (Δ^ ^) and / or that the individual correction value (Δ^ ^ ) is a difference between the starting value (^^ ^) and the target value (^^ ^) and / or that the individual correction factor (^ ) is the quotient of a ^ ^ sum of the starting parameter (^ ^ ) and the correction parameter (Δ^ ^ ^ ) on the one hand and the starting value (^ ^ ) on the other hand.

11. Method according to one of the preceding claims, characterized in that the individual parameter (^ ^ ) is a gas flow or a composition of a gas flow with which a gas cushion (6) is generated, which supports a substrate holder (5) which is heated from below by heating a susceptor (3) with a heating device (11).

12. Method according to one of the preceding claims, characterized in that the individual parameter (^ ^ ) a gas flow or an inlet 31009PCT – 7.11.2023 composition of a gas flow with which heat transport between a temperature control device (11) and a susceptor (3) can be influenced.

13. Method according to one of the preceding claims, characterized in that the individual parameter (^ ^ ) is a gas flow of a process gas that contains elements from which the deposited layer or layer sequence consists or which dopes it.

14. Method for setting up a device for the simultaneous deposition of layers or layer sequences on substrates (7) deposited at spatially different storage locations (5') in a process chamber (2) or a local variable influencing the layer growth at the storage location (5'), characterized in that by repeatedly applying the method according to one of claims 3 to 14, several sensitivity matrices (^ ) for the same or ^ ^ ,^ he different target values ​​(^^ ) and various individual parameters (^ ^ ) are formed.

15. Method according to one of claims 3 to 14, characterized in that for predicting the change of second values ​​(^′ ^ ) the layer property of layers or layer sequences deposited on several substrates (7) arranged at different locations (5') in the process chamber (2) or a local variable influencing the layer growth, the starting values ​​(^^ ^) obtained with the first set of individual starting parameters (^^ ) are used and in further one or more third preliminary tests on a plurality of third substrates (7) simultaneously with a third set of second test parameters (^′) assigned to another individual parameter (^ ) ^ ), 31009PCT – 7.11.2023 which are different from the first test parameters (^^ ^ ), a second test layer or second test layer sequence is deposited, wherein second test values ​​(^′^ ^) of the layer property are determined at the second test layers or second test layer sequences or second test values ​​(^′^ ^) of the local quantity are measured during the deposition of the second test layers or second test layer sequences, and from the second test values ​​(^′^ ^) of the layer property or the local quantity at least one second sensitivity matrix (^′ ^,^ ), the elements of which each describe the influence of a change in each of the other individual parameters (^ ^ ^) on each of the second target values ​​(^′ ^ ) of the layer property or the local size.

16. Method according to one of claims 3 to 15, characterized in that to predict the change in the values ​​(^ ^) of the layer property in further one or more third preliminary tests on a plurality of third substrates (7) simultaneously with a third set of another individual parameter (^ ^ ) assigned to the second test parameters (^′^), which are derived from the first test parameters (^ ^ ) are different, a second test layer or second test layer sequence is deposited in each case, wherein second test values ​​(^′^ ^) of the same layer property are determined on the second test layers or second test layer sequences or second test values ​​(^′^ ^) of the same local quantity are measured during the deposition of the second test layers or second test layer sequences, and from the second test values ​​(^′^ ^) of the layer property or the same local quantity at least one second sensitivity matrix (^′ ^,^ ), whose elements each reflect the influence of a change in each of the other individual parameters (^^ ) to each of the target values ​​(^′^ ^ ) of the layer property or local quantity. 31009PCT – 7.11.2023 17. Method according to claim 14, 15 or 16, characterized in that in a first application of the method the individual parameter (^ ^ ) is a gas flow with which a gas cushion supporting the local substrate holder (5) is generated, and the target value (^^ ^) is the layer thickness of the layer or at least one layer of the layer sequence, and that in a subsequent second application of the method, the individual parameter (^′ ^) is a gas flow with which a heat transport from a heating device (11) to the substrate (7) is influenced, and the target value (^′^ ^ ) is the temperature of the substrate (7) during deposition of the layer or else the layer thickness of the layer or at least one layer of the layer sequence.

18. Device for depositing a layer or layer sequence on several substrates (7) in a process chamber (2), with a gas mixing device having valves (19) and mass flow controller (18), a process chamber (2) arranged in a reactor housing (1), a susceptor (3) arranged in the process chamber (2) with storage spaces for a plurality of substrates (7), with a gas inlet element (9) for introducing process gases provided in the gas mixing device according to a recipe stored in a control device (22), wherein the control device (22) is set up according to individual parameters specified by the recipe (^ ^) to direct gas flows or heat flows independently of one another to different substrates (7) or to one or more substrate holders (5) carrying substrates (7), characterized in that in the control device (22) correction factors (^ ^ ) to correct the individual parameters (^ ^ ) are stored, with which the individual parameters provided by the recipe (^ ^ ) determined according to a method according to any one of claims 1 to 16. 31009PCT – 7.11.2023 19. Method for the simultaneous deposition of a layer or layer sequence on a plurality of substrates (7) in a process chamber (2) with a device according to claim 18, wherein gases are fed into the process chamber (2) according to predetermined treatment parameters and / or temperatures are set in the process chamber (2), wherein the treatment parameters are individually assigned to the various substrates (7) individual parameters (^ ^ ) that can be individually changed, whereby a change in one of the individual parameters (^ ^ ) not just a change of a value (^ ^ ) of a layer property with the changed individual parameter (^ ^ ) deposited layer or layer sequence, but also a change in a value (^ ^) of the layer property of a layer or layer sequence deposited on another of the substrates (7), or wherein a change in one of the individual parameters (^ ^ ) not just a change in a value (^ ^ ) of a local quantity influencing the layer growth at the storage location (5') of the substrate, but also results in a change in the local quantity at other storage locations (5'), characterized in that the individual parameters (^ ^ ) with correction factors (^ ^) are corrected, which are determined in particular according to one of claims 1 to 16.

20. Control program for controlling the valves (19) and mass flow controller (18) of a device according to claim 18 for carrying out the method according to claim 19.

21. Method or device or control program, characterized by one or more of the characterizing features of one of the preceding claims. 31009PCT - 7.11.2023

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