Temperature sensing for semiconductor devices

Abstract

This document describes systems and techniques directed at temperature sensing for semiconductor devices. In aspects, a temperature sensor includes an oscillator whose output frequency varies as a function of temperature. One or more attributes associated with the oscillator output can be determined to generate a value corresponding to a temperature at one or more temperature-sensitive resistors of the oscillator. In this way, a compact temperature sensor can be implemented on a semiconductor device to measure a temperature of a region of the semiconductor device without analog input / outputs and a dedicated supply power.

Description

TEMPERATURE SENSING FOR SEMICONDUCTOR DEVICESBACKGROUND

[0001] Electronic devices play integral roles in manufacturing, communication, transportation, healthcare, commerce, social interaction, and entertainment. For instance, electronic devices power server farms that provide cloud-based computing functionality for commerce and communication. Electronic devices are also embedded in many different types of modem equipment, such as medical devices, automobiles, and industrial tools. With electronic devices becoming pervasive and crucial to many aspects of modern life, device performance and reliability are paramount.

[0002] Electronic devices consist of general-purpose and / or application-specific semiconductor devices, such as application processors, micro-electromechanical systems (MEMS) sensors, microcontrollers, and similar components. These semiconductor devices enable electronic devices to provide a wide range of services and functions. As these constituent components of electronic devices advance, so too will overall device performance and reliability.

[0003] This Background section is provided to generally present the context of the disclosure. Unless otherwise indicated herein, material described in this section is neither expressly nor implicitly admitted to be prior art to the present disclosure or the appended claims.SUMMARY

[0004] This document describes systems and techniques directed at temperature sensing for semiconductor devices. In aspects, a temperature sensor includes an oscillator whose output frequency varies as a function of temperature. One or more attributes associated with the oscillator output can be determined to generate a value corresponding to a temperature at one or more temperature-sensitive resistors of the oscillator. In this way, a compact temperature sensor can be implemented on a semiconductor device to measure a temperature of a region of the semiconductor device without analog input / outputs and a dedicated supply power.

[0005] In aspects, a temperature sensor is disclosed that includes an oscillator configured to generate a variable frequency output based on a temperature. The oscillator includes a first circuit including a first temperature-sensitive resistor and a first capacitor. The first capacitor is configured to charge towards a first voltage at a first rate based on the temperature at the first temperature-sensitive resistor. The oscillator further includes a second circuit including a second temperature-sensitive resistor and a second capacitor. The second capacitor is configured to discharge towards a second voltage at a second rate based on the temperature at the second temperature-sensitive resistor. The second voltage is less than the first voltage. The oscillatorfurther includes a comparator having a non-inverting input operatively coupled to the first circuit and an inverting input operatively coupled to the second circuit. Additionally, the oscillator includes at least one switch configured to switch, based on a change in polarity between the noninverting input and the inverting input, (i) the first circuit from being charged towards the first voltage to being discharged towards the second voltage and (ii) the second circuit from being discharged towards the second voltage to being charged towards the first voltage. The temperature sensor further includes a counter module operatively coupled to the oscillator and configured to determine one or more attributes associated with the variable frequency output. The temperature sensor also includes a conversion module operatively coupled to the counter module and configured to generate, based on the determined one or more attributes associated with the variable frequency output, a value corresponding to the temperature. The phrase “a polarity between the two inputs” may be used interchangeably with the phrase “a polarity of a difference between the two inputs”.

[0006] In additional aspects, a method is disclosed that includes generating a first clock signal and determining a first change in polarity between a non-inverting input and an inverting input (or a difference therebetween). Responsive to determining the first change in polarity and until determining a second change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator, the method includes (i) generating a second clock signal; (ii) charging a first capacitor, via a first resistor, towards a first voltage at a first rate, the charging at the first rate based on a temperature of the first resistor; and (iii) discharging a second capacitor, via a second resistor, towards a second voltage at a second rate, the discharging at the second rate based on a temperature of the second resistor. The method further includes continuing to determine a sequence of changes in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator effective to cause the temperature-sensitive oscillator to generate a variable frequency output. The method further includes determining one or more attributes associated with the variable frequency output and generating, based on the determined one or more attributes, a value corresponding to a temperature of the temperature-sensitive oscillator.

[0007] The details of one or more implementations are set forth in the accompanying Drawings and the following Detailed Description. Other features and advantages will be apparent from the Detailed Description, the Drawings, and the Claims. This Summary is provided to introduce subject matter that is further described in the Detailed Description. Accordingly, a reader should not consider the Summary to describe essential features or limit the scope of the claimed subject matter.BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Systems and techniques directed at temperature sensing for semiconductor devices are described with reference to the following drawings. The same numbers are used throughout the drawings to reference like features and components:

[0009] Fig. 1 illustrates an example electronic device with a semiconductor device that includes a temperature-sensitive oscillator to measure a temperature of a region associated with the semiconductor device.

[0010] Fig. 2 illustrates an example semiconductor device that includes example temperature sensor(s) and additional hardware elements.

[0011] Fig. 3 illustrates an example block diagram and an associated example timing diagram of an example temperature sensor in accordance with one or more implementations.

[0012] Fig. 4 illustrates an example circuit diagram of an example temperature-sensitive oscillator in accordance with one or more implementations.

[0013] Fig. 5 illustrates an example circuit diagram of an example temperature-sensitive oscillator in a first configuration and an associated voltage versus time diagram in accordance with one or more implementations.

[0014] Fig. 6 illustrates an example circuit diagram of an example temperature-sensitive oscillator in a second configuration and an associated voltage versus time diagram in accordance with one or more implementations.

[0015] Fig. 7 illustrates an example circuit diagram of an example temperature-sensitive oscillator in a third configuration and an associated voltage versus time diagram in accordance with one or more implementations.

[0016] Fig. 8 illustrates an example circuit diagram of an example temperature-sensitive oscillator in a fourth configuration and an associated voltage versus time diagram in accordance with one or more implementations.

[0017] Fig. 9 illustrates an example voltage versus time diagram and an example variable frequency output versus time diagram in accordance with one or more implementations.

[0018] Fig. 10 illustrates, with a flow diagram, an example method for temperature sensing on a semiconductor device.

[0019] Fig. 11 illustrates an example implementation of the electronic device of Fig. 1.DETAILED DESCRIPTIONOverview

[0020] Electronic devices, such as smartphones and laptops, utilize a plurality of electrical components, including semiconductor devices. Semiconductor devices may be implemented as,for example only and not by way of limitation, discrete devices (e.g., diodes, transistors), optical devices (e.g., light-emitting diodes), microwave devices, sensors, integrated circuits, and other such devices. These semiconductor devices control the flow of electrical current, enabling them to gain up or down electronic signals, switch electronic signals on and off, process electronic signals, perform energy conversion, store data, and / or execute additional services in electronic circuits. In one example, a semiconductor device (e.g., chip) may be implemented as an integrated circuit having multiple functional elements mounted on a single die.

[0021] As the dimensions of semiconductor devices continue to decrease, their energy density increases, leading to risks of overheating. During operation, for example, semiconductor devices, such as the aforementioned example integrated circuit, may generate heat due to internal electrical resistances to current flow. In still further instances, semiconductor devices may generate heat due to switching losses, leakage currents, overvoltage, and / or overcurrent. In modem semiconductor devices, local die temperatures can increase significantly in just a few milliseconds. Irrespective of the source of heat generation, thermal energy may be transferred to neighboring components within the electronic device. Managing the amount of thermal energy and the direction of heat transfer from these semiconductor devices is critical to ensure reliable operation of the electronic device, as excessive heat can degrade overall device performance and lead to permanent physical and electrical damage.

[0022] Semiconductor devices, themselves, can also be negatively impacted by elevated temperature levels. For example, as conducting materials within semiconductor devices increase in temperature, an electrical resistance of these conducting materials may likewise increase due to a positive temperature coefficient of resistance. If the internal electrical resistance of conducting materials in a semiconductor device increases, then the device may draw and / or require greater amperage to support operations, as described by Ohm’s Law; otherwise, a voltage (IR) may drop across one or more components of the semiconductor device. As a result, elevated temperature levels within a semiconductor device may cause greater power expenditure and decreased efficiency.

[0023] In another example, elevated temperature levels in a semiconductor device can accelerate electromigration. At higher temperatures, atoms in conducting materials have more thermal energy and, therefore, greater mobility. Thus, when a high current density flows through the conducting materials, the momentum of the conducting electrons can transfer to these highly mobile atoms, causing them to migrate. The migration of these atoms caused by elevated temperature levels can increase a likelihood of mechanical failures. As a result, elevated temperature levels within a semiconductor device for prolonged durations (e.g., temperature stress cycling) may reduce longevity due to electromigration.

[0024] To prevent issues associated with elevated temperature levels within semiconductor devices, some electronic devices utilize dynamic thermal management (DTM). Possible actions associated with DTM range from reducing clock frequency and / or power throttling to complete shutdown of the device, all in an effort to minimize additional heat generation. However, indiscriminately reducing clock frequency and / or throttling power to an entire semiconductor device may not be a preferred solution, as a particular element of a semiconductor device may be the primary source of heat generation, and throttling power to multiple elements on the semiconductor device may decrease performance. As an example, an integrated circuit may include a wireless communications component and an image signal processor. During operation, the image signal processor may be generating more heat than the wireless communications component. Throttling power to both the image signal processor and the wireless communications component may reduce heat, but it may also reduce performance. Throttling power to the image signal processor alone, however, may be sufficient to reduce heat generation and, thereby, preserve longevity of the semiconductor device while also providing good performance.

[0025] For an electronic device to better monitor a thermal profile of a semiconductor device, semiconductor devices may include one or more temperature sensors. In this way, an electronic device can, for example, throttle power to a particular element on a semiconductor device based on a determination that the particular element is generating excess heat. Additionally, or alternatively, the electronic device can adjust, based on one or more temperature sensor measurements, a clock frequency of one or more elements on a semiconductor device or reduce a supply voltage, as well as activate a fan in a particular region proximate to a heatgenerating element. By determining a thermal profile of a semiconductor device using one or more temperature sensors, the electronic device can better protect semiconductor devices against localized overheating (e.g., hotspots), thermal runaway scenarios, and / or thermal attacks.

[0026] Temperature sensing solutions for semiconductor devices generally include on- chip temperature sensors having three modules: a front-end sensing element; a quantizer to measure a signal from the front-end sensing element; and a processor to convert an output of the quantizer to a format readable by subsequent modules. A temperature sensor can, using these three modules, measure a temperature of a region (e.g., air, hardware) and provide a temperature readout to a module (e.g., a processor, a circuit) so the electronic device can monitor a temperature of the region (e.g., distributed temperature sensors (DTS)). Using multiple temperature sensors, the electronic device can determine a thermal profile of a semiconductor device to determine, for example, a primary heat source, a heat flux, and other similar attributes or quantities.

[0027] Some temperature sensors integrated on semiconductor devices include a diode- connected bipolar junction transistor (BJT) and an analog-to-digital converter (ADC). Such temperature sensors are comparatively simple and have a good accuracy with batch calibration. However, temperature sensors with a diode-connected BJT and an ADC frequently occupy a large amount of space on already space-constrained semiconductor devices. Thus, in practice, the diode-connected BJT and the ADC are often integrated within a semiconductor device at different locations due to size and placement constraints. As a result, a temperature sensor including a diode-connected BJT and ADC may require additional routing, for example, to route a bias current to the diode-connected BJT and / or measure a base emitter voltage of the diode-connected BJT.

[0028] Other temperature sensors are supply sensitive. Such temperature sensor implementations may be particularly undesirable if conducting materials in a semiconductor device have a large positive temperature coefficient of resistance because the resistance may increase proportionally with increases in temperature, effecting a voltage. Thus, a large positive temperature coefficient of resistance may amplify the supply sensitivity in environments with wide temperature ranges. Still further, it is desired that temperature sensors provide a target resolution even in harsh or noisy environments.

[0029] Additional temperature sensor implementations include analog input / outputs (I / Os), which generally require routings that are difficult to implement. As an example, a semiconductor device implemented as an integrated circuit with one or more components (e.g., a processor, a wireless communications component) may include a power grid network. The power grid network includes metal layers (e.g., copper lines) used to distribute power (VDD) and ground (VSS) to integrated elements (e.g., logic gates, memory cells) on the semiconductor device. Power grid networks are intended to provide stable supply power, minimizing voltage drops and noise that can negatively impact the performance and reliability of integrated elements. Having a low-resistance power grid network is critical for meeting electromigration and IR drop (EMIR) targets, particularly around hotspots. However, in order to implement temperature sensors with analog I / Os, power grid networks often need to be chopped to open up routing channels. Chopping a power grid network can not only make design considerations for a semiconductor device more difficult but it can also bottleneck power distribution in the power grid network, which may impair supply power stability and lead to failure of modules connected to it. Further, bottlenecking power distribution can reduce a number of available routing channels, which may lead to temperature increases in the limited routing channels and, thereby, cause greater electrical resistances. Further, analog signal lines frequently require coaxial shielding to prevent noise coupling. An analog signal line with coaxial shielding may occupy as many as three layers (e.g., top metal layers) in the power grid network that could otherwise be used for power delivery andother routings. In view of these limitations associated with temperature sensing implementations, temperature sensors are often positioned away from critical hotspot zones in less space-constrained regions, which are also often suboptimal temperature-sensing regions. It would be advantageous to determine a more-accurate thermal profile of a semiconductor device, particularly at one or more hotspot zones, using one or more temperature sensors without chopping a power grid network.

[0030] To this end, this document describes systems and techniques directed at temperature sensing for semiconductor devices. In aspects, a temperature sensor includes an oscillator whose output frequency varies as a function of temperature. One or more attributes associated with the oscillator output can be determined to generate a value corresponding to a temperature at one or more temperature-sensitive resistors of the oscillator. In this way, a compact temperature sensor can be implemented on a semiconductor device to measure a temperature of a region of the semiconductor device without analog I / Os and a dedicated supply power.

[0031] Example implementations in various levels of detail are discussed below with reference to the associated figures. The discussion below first sets forth an example operating environment and then describes example hardware, schemes, and techniques. Example methods are described thereafter with reference to flow charts or diagrams.Example Environment

[0032] Fig. 1 illustrates an example electronic device 102 with a semiconductor device 104 (e.g., an integrated circuit) that includes a temperature-sensitive oscillator 106 to measure a temperature of a region associated with the semiconductor device 104. In this example, the electronic device 102 is depicted as a smartphone. However, the electronic device 102 may be implemented as any suitable computing or electronic device, such as a mobile communication device, modem, cellular or mobile phone, mobile station, gaming device, navigation device, media or entertainment device (e.g., a media streamer or gaming controller), laptop computer, desktop computer, tablet computer, smart appliance, vehicle-based electronic system, wearable computing device (e.g., clothing or watch), Internet of Things (loTs) device, electronic portion of a machine or some equipment, server computer or portion thereof (e.g., a server blade), and the like. Illustrated examples of the electronic device 102 include a tablet device 102-1, a smart television 102-2, a desktop computer 102-3, a server computer 102-4, a smartwatch 102-5, a smartphone or document reader 102-6, and intelligent glasses 102-7.

[0033] In example implementations, the electronic device 102 includes at least one semiconductor device 104. The semiconductor device 104 can be realized as a discrete device (e.g., diode, transistor), an optical device (e.g., light-emitting diodes), a microwave device, asensor, a general-purpose processor, a security IC, a memory chip, a communications IC (e.g., that performs encryption or decryption on information being transmitted or received), or the like. The semiconductor device 104 includes the temperature-sensitive oscillator 106 (e.g., mounted on chip). In operation, based on a temperature of one or more resistors, the temperature-sensitive oscillator 106 generates a variable frequency output 108 (e.g., a clock signal) that includes one or more attributes (e.g., a frequency, an amplitude, a phase shift) indicative of a temperature. The temperature-sensitive oscillator 106 may be designed having a small form factor, composed of silicon-based transistors (e.g., metal-oxide-semi conductor field-effect transistors (MOSFETs)) and capacitors (e.g., silicon dioxide (SiO2) capacitors). The temperature-sensitive oscillator 106 may operate without a dedicated power supply and without analog I / O signals. Instead, the temperature-sensitive oscillator 106 may receive and / or output digital signals and may be charged via power lines (VDD) of a power grid network.Example Schemes, Techniques, and Hardware Directed at Temperature Sensing for Semiconductor Devices

[0034] Fig. 2 illustrates an example semiconductor device 104 that includes example temperature sensor(s) 202 and additional hardware elements. As illustrated, for example only and not by way of limitation, the example semiconductor device 104 is a system-on-chip (SoC) having a plurality of hardware elements (e.g., digital blocks). The hardware elements may include one or more processors 204, memory 206, a wireless communications component 208, and one or more sensors and / or actuators 210 (sensors / actuators 210). One or more temperature sensors 202 may be distributed across the semiconductor device 104 (e.g., in proximity to one or more heatgenerating components). For example, two temperature sensors of the one or more temperature sensors 202 may be mounted on the semiconductor device 104 adjacent to the one or more processors 204, such as in proximity to junctions, logic gates, switches, and the like.

[0035] In at least some implementations, the one or more temperature sensors 202 are operatively coupled to the one or more processors 204 and / or memory 206 (e.g., via communication lines of a power grid network). In additional implementations, the one or more temperature sensors 202 are operatively coupled to a processor and / or memory external to the semiconductor device 104. In either implementation, an electronic device (e.g., electronic device 102) can monitor and / or store measured temperatures at various points across the semiconductor device 104. Although eleven temperature sensors 202 are illustrated as mounted on the semiconductor device 104 in Fig. 2, a single semiconductor device may include a greater number of temperature sensors (e.g., hundreds, thousands).

[0036] During operation, the semiconductor device 104 may non-uniformly generate heat depending on an executing task. For example, during an active voice call facilitated by the wireless communications component 208, the wireless communications component 208 may generate more heat than an inertial measurement unit of the one or more sensors and / or actuators 210, whereas, during a visual-gaming operation facilitated by a graphics processing unit of the one or more processors 204, the one or more processors 204 and the memory 206 may generate more heat than the wireless communications component 208. In some instances, for example, the graphics processing unit may substantially increase in temperature in only a few milliseconds, particularly when rendering high-resolution gaming content. Due to the circumstantial variability in an amount and a source of heat generation, as well as a rate of temperature increase, the one or more temperature sensors 202 may be configured having a small form factor and an adjustable sampling rate, enabling them to be positioned in near proximity to hardware elements on the semiconductor device 104 to obtain temperature readings at a sufficiently high frequency (e.g., every millisecond).

[0037] Fig. 3 illustrates an example block diagram 300 and an associated example timing diagram 302 of an example temperature sensor 304 in accordance with one or more implementations. As illustrated, the example temperature sensor 304 of the one or more temperature sensors 202 includes the temperature-sensitive oscillator 106, a counter module 306, and a conversion module 308. The temperature-sensitive oscillator 106 is configured to output the variable frequency output 108 and may be implemented as an resistor-capacitor (RC) relaxation oscillator. In implementations, the variable frequency output 108 is a function of a temperature of the temperature-sensitive oscillator 106 and / or one or more resistors associated therewith. The variable frequency output 108 may include a digital signal, such as a binary signal, a binary-coded decimal (BCD) encoded signal, a digital pulse, a digital waveform, a pulse code modulation (PCM), and / or similar signals.

[0038] The temperature-sensitive oscillator 106 may be operatively coupled to the counter module 306, such that the variable frequency output 108 can be transmitted to the counter module 306. The counter module 306 may be configured to determine one or more attributes associated with the variable frequency output 108, such as an encoding scheme, a frequency, an amplitude, a period, a rise time and fall time, a jitter, a duty cycle, and / or other similar qualities. The counter module 306 may be implemented on a semiconductor device (e.g., in silicon) using any of a variety of logic circuitry components, such as flip-flops and / or combinational logic gates. In one example, the counter module 306 includes sequential logic circuits to store binary data associated with the variable frequency output 108. A frequency of the variable frequency output 108 may determine the rate at which the counter module 306 counts. In implementations, the countermodule 306 counts a number of rising edges in the variable frequency output 108 within a predetermined time frame and generates a count value 310. In this way, the counter module 306 can be configured to determine a frequency since the count value 310 may be indicative of (e.g., inversely proportional to) frequency. The counter module 306 may further include reset logic to reset a count value 310 to zero (e.g., after a predetermined amount of time).

[0039] The counter module 306 may be operatively coupled to the conversion module 308, such that the count value 310 can be transmitted to the conversion module 308. The conversion module 308 may be configured to generate, based on the determined one or more attributes associated with the variable frequency output 108 (e.g., the count value of a number of rising edges), a value corresponding to a temperature 312 (temperature readings 312) of the temperature-sensitive oscillator 106 and / or one or more resistors associated therewith. The conversion module 308 may be implemented on a semiconductor device (e.g., in silicon) using combinational logic circuits, such as decoders. For example, the conversion module 308 includes a decoder circuit having input lines, an enable line, output lines, and decoder logic. The decoder circuit may receive n-bit binary input (e.g., the count value 310) and activate 2noutput lines based on the input value to generate the value corresponding to the temperature 312 (e.g., a binary representation of temperature in Celsius or degrees Fahrenheit). In implementations, the conversion module 308 generates the value corresponding to the temperature 312 by converting the number of rising edges in the variable frequency output (e.g., for a predetermined time frame) using a polynomial (e.g., a second order polynomial, a third order polynomial).

[0040] As further illustrated in the example timing diagram 302, the variable frequency output 108 includes, for example only and not by way of limitation, a binary signal of ones and zeros. The temperature-sensitive oscillator 106 may generate the variable frequency output 108 upon receiving a high value enable signal 314 (e.g., a to b, c to d). Within a first predetermined time frame tl, a first frequency of the binary signal may be larger or smaller than a second frequency of the binary signal within a second predetermined time frame t3 based on an increasing or decreasing temperature of the temperature-sensitive oscillator 106 and / or one or more resistors associated therewith. The counter module 306 may generate, for each time frame tl and t3, a count value 310 based on the number of rising edges in the binary signal. The count value 310, for each time frame tl and t3, may be converted by the conversion module 308 to generate a value corresponding to the temperature 312. In one example, each time frame tl and t3 may be 100 microseconds, while time frame t2 may be 900 microseconds.

[0041] Fig. 4 illustrates an example circuit diagram 400 of an example temperature-sensitive oscillator 106 in accordance with one or more implementations. As illustrated, the example temperature-sensitive oscillator 106 includes a comparator 402operatively coupled to two RC circuits (e.g., first RC circuit 404-1, second RC circuit 404-2), which, in at least some implementations, may be combined into a larger circuit (not illustrated). The comparator 402 includes two inputs 406: a non-inverting input 406-1 (Vp 406-1) and an inverting input 406-2 (Vn 406-2). The comparator 402 may be implemented as a standalone component (or electronic circuit) and may be designed to compare a relative magnitude of a voltage between the non-inverting input 406-1 and the inverting input 406-2. Based on a polarity between the two inputs 406 (e.g., if a voltage of an input is larger than the other input), the comparator 402 may output a value (e.g., one, zero). For example, if a first voltage of the noninverting input 406-1 is larger than a second voltage of the inverting input 406-2 (e.g., a first polarity), then the comparator 402 may output a binary value of one, whereas if the second voltage of the inverting input 406-2 is larger than the first voltage of the non-inverting input 406-1 (e.g., a second polarity), then the comparator 402 may output a binary value of zero. The phrase “a polarity between the two inputs” may be used interchangeably with the phrase “a polarity of a difference between the two inputs”. That is, the comparator can be configured to compare the two inputs and provide an indication of which input is greater in magnitude, or a polarity of the difference in magnitudes. The comparator 402 outputting one or more values for an extended period of time (e.g., greater than one microsecond) may produce the variable frequency output 108.

[0042] Each RC circuit 404 may include a resistor (e.g., a first resistor 408-1 (R1 408-1), a second resistor 408-2 (R2408-2)), a capacitor (e.g., a first capacitor 410-1 (Cl 410-1), a second capacitor 410-2 (C2 410-2)), a supply voltage (e.g., a first supply voltage 412-1 (VDD 412-1), a second supply voltage 412-2 (VDD 412-2)), and a reference voltage (e.g., a first reference voltage 414-1 (Ground 414-1), a second reference voltage 414-2 (Ground 414-2)). In at least some implementations (not illustrated), the first RC circuit 404-1, the second RC circuit 404-2, and / or the comparator 402 are positioned under a voltage regulator effective to increase a supply rejection.

[0043] In implementations, the first resistor 408-1 and the second resistor 408-2 include routing metal layers (e.g., of a power grid network). As an example, a semiconductor device implemented as an SoC may include a power grid network having multiple routing metal layers used to form a network of wires and vertical interconnect access (vias) to distribute power (VDD) and / or ground to one or more hardware elements. The first resistor 408-1 and the second resistor 408-2 may each include a routing metal layer of the multiple routing metal layers. In such an implementation, additional hardware to implement the first resistor 408-1 and the second resistor 408-2 may be avoided, minimizing design and manufacturing costs as well as reducing the dimensional profile of the temperature-sensitive oscillator 106.

[0044] Further, the first resistor 408-1 and the second resistor 408-2 include a first resistance and a second resistance, respectively, which may be equivalent. In still further implementations, the first resistor 408-1 and the second resistor 408-2 include a first temperature coefficient of resistance and a second temperature coefficient of resistance, respectively, which may also be equivalent. For example, the first resistor 408-1 implemented as a routing metal layer may include a first resistance that increases (e.g., a positive temperature coefficient of resistance) or decreases (e.g., a negative temperature coefficient of resistance) as a function of temperature. In this way, the first resistor 408-1 and the second resistor 408-2 may be referred to as temperature sensitive. Whereas many modem semiconductor resistors are intentionally designed having a negligible temperature coefficient of resistance, the temperature-sensitive oscillator 106 may use routing metal layers (e.g., inherent to a power grid network) with a predetermined temperature coefficient of resistance. For example, the first resistor 408-1 implemented as a routing metal layer may include a positive temperature coefficient of resistance that varies up to 0.15% per degree Celsius depending on a metallurgic composition of the routing metal layer and a temperature of an environment.

[0045] In implementations, the first capacitor 410-1 and the second capacitor 410-2 include a first capacitance and a second capacitance, respectively, which may be equivalent. As illustrated, the first capacitor 410-1 and the second capacitor 410-2, at a first end, are operatively coupled (e.g., electrically, physically) to the first reference voltage 414-1 and the second reference voltage 414-2, respectively. Further, the first capacitor 410-1 and the second capacitor 410-2, at a second end, are operatively coupled to three branches of their respective RC circuit 404. For example, the first capacitor 410-1, at the second end opposite the first end operatively coupled to the first reference voltage 414-1, is operatively coupled to the non-inverting input 406-1, the first resistor 408-1, and a first switch complex 416-1 (SI 416-1). The connection between the second end of the first capacitor 410-1 and the first resistor 408-1 may define a node of the first RC circuit 404-1. The second capacitor 410-2, at the second end opposite the first end operatively coupled to the second reference voltage 414-2, is operatively coupled to the inverting input 406-2, the second resistor 408-2, and a second switch complex 416-2 (S2 416-2). The connection between the second end of the second capacitor 410-2 and the second resistor 408-2 may define a node of the second RC circuit 404-2.

[0046] The first switch complex 416-1 and the second switch complex 416-2 may each include one or more switches. In alternative implementations (not illustrated), the first switch complex 416-1 and the second switch complex 416-2 may be combined into one switch complex, including two or more switches. As illustrated, the first switch complex 416-1 electrically connects the first RC circuit 404-1 to the first supply voltage 412-1, the first reference voltage414-1, or neither. Similarly, the second switch complex 416-2 electrically connects the second RC circuit 404-2 to the second supply voltage 412-2, the second reference voltage 414-2, or neither.

[0047] The first RC circuit 404-1 and the second RC circuit 404-2 further include a third switch complex 416-3 and a fourth switch complex 416-4, respectively. The third switch complex 416-3 electrically connects the first RC circuit 404-1 to the first supply voltage 412-1, the first reference voltage 414-1, or neither. Similarly, the fourth switch complex 416-4 electrically connects the second RC circuit 404-2 to the second supply voltage 412-2, the second reference voltage 414-2, or neither. In contrast to the first switch complex 416-1 and the second switch complex 416-2, the third switch complex 416-3 and fourth switch complex 416-4 operatively couple to the first capacitor 410-1 via the first resistor 408-1 and the second capacitor 410-2 via the second resistor 408-2, respectively.

[0048] Fig. 5 illustrates an example circuit diagram 500 of an example temperature-sensitive oscillator 106 in a first configuration and an associated voltage versus time diagram 502 in accordance with one or more implementations. As illustrated, the example circuit diagram 500 of the example temperature-sensitive oscillator 106 is similar to the example circuit diagram 400 from Fig. 4 but includes a particular switch configuration at the third switch complex 416-3 and the fourth switch complex 416-4.

[0049] In such a configuration, provided that a first capacitor voltage of the first capacitor 410-1 is charged (e.g., pre-charged) to the first supply voltage 412-1 at time equal to zero, a voltage 504 at the non-inverting input 406-1 may gradually decay as given by equation (1) below:where Vp denotes a voltage (e.g., a voltage of the non-inverting input 406-1), VDD denotes a supply voltage (e.g., the first supply voltage 412-1), t denotes time, R denotes a resistance of the first resistor 408-1, and C denotes a capacitance of the first capacitor 410-1. Thus, the voltage 504 at the non-inverting input 406-1, as illustrated in the voltage versus time diagram 502, is a function of time. Additionally, in such a configuration at the third switch complex 416-3, the voltage 504 at the non-inverting input 406-1 may decay at a rate (e.g., voltage over time) based on a resistance of the first resistor 408-1, which may be a function of temperature (e.g., a temperature coefficient of resistance). For example, the first capacitor 410-1 may be discharged via the first resistor 408-1.

[0050] Further, in such a configuration, provided that a second capacitor voltage of the second capacitor 410-2 is charged towards the second reference voltage 414-2 at time equal to zero, a voltage 506 at the inverting input 406-2 may gradually increase as given by equation (2) below:where Vn denotes a voltage (e.g., a voltage of the inverting input 406-2), VDD denotes a supply voltage (e.g., the second supply voltage 412-2), t denotes time, R denotes a resistance of the second resistor 408-2, and C denotes a capacitance of the second capacitor 410-2. Thus, the voltage 506 at the inverting input 406-2, as illustrated in the voltage versus time diagram 502, is a function of time. Additionally, in such a configuration at the fourth switch complex 416-4, the voltage 506 at the inverting input 406-2 may increase at a rate (e.g., voltage over time) based on a resistance of the second resistor 408-2, which may be a function of temperature (e.g., a temperature coefficient of resistance). For example, the second capacitor 410-2 may be discharged via the second resistor 408-2.

[0051] As illustrated in the voltage versus time diagram 502, the time (Tl) for the first capacitor 410-1 and the second capacitor 410-2 to have approximately equal voltages (and therefore approximately equal voltages at the non-inverting input 406-1 and the inverting input 406-2) is mathematically independent of a supply voltage (e.g., first supply voltage 412-1, second supply voltage 412-2), as given by equation (3) below:Tl = RC * In (2) where Tl denotes time, R denotes a resistance (e.g., a shared resistance of the first resistor 408-1 and the second resistor 408-2), and C denotes a capacitance (e.g., a shared capacitance of the first capacitor 410-1 and the second capacitor 410-2). In this way, an oscillation frequency of the temperature-sensitive oscillator 106 can be supply independent (e.g., independent of a supply voltage) if it is made only a function of Tl. As a result, a temperature sensor having the temperature-sensitive oscillator 106 can have a high supply rejection. Further, a temperature sensor having the temperature-sensitive oscillator 106 may not require a dedicated supply power.

[0052] Fig. 6 illustrates an example circuit diagram 600 of an example temperature-sensitive oscillator 106 in a second configuration and an associated voltage versus time diagram 602 in accordance with one or more implementations. As illustrated, the example circuit diagram 600 of the example temperature-sensitive oscillator 106 is similar to the example circuit diagram 500 from Fig. 5 but includes a particular switch configuration at the first switch complex 416-1 and the second switch complex 416-2.

[0053] In particular, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, the first switch complex 416-1 electrically connects the noninverting input 406-1 to the first reference voltage 414-1. As a result, as illustrated in the voltage versus time diagram 602, a voltage of the non-inverting input 406-1 (Vp voltage 604) decreases to the first reference voltage 414-1. For example, the first switch complex 416-1, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, switchesthe first capacitor 410-1 from being discharged towards the first reference voltage 414-1 via the first resistor 408-1 to being discharged towards the first reference voltage 414-1 via a low- resistance path that bypasses the first resistor 408-1 effective to decrease a first capacitor voltage of the first capacitor 410-1 (and the Vp voltage 604) to approximately the first reference voltage 414-1. Although the voltage versus time diagram 602 illustrates this drop in voltage as occurring instantaneously, it will be appreciated by one skilled in the art that in implementation there may be a time delay due to imperfections in an electronic circuit.

[0054] Further, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, the second switch complex 416-2 electrically connects the inverting input 406-2 to the second supply voltage 412-2. As a result, as illustrated in the voltage versus time diagram 602, a voltage of the inverting input 406-2 (Vn voltage 606) increases to the second supply voltage 412-2. For example, the second switch complex 416-2, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, switches the second capacitor 410-2 from being charged towards the second supply voltage 412-2 via the second resistor 408-2 to being charged towards the second supply voltage 412-2 via a low-resistance path that bypasses the second resistor 408-2 effective to increase a second capacitor voltage of the second capacitor 410-2 (and the Vn voltage 606) to approximately the second supply voltage 412- 2. Although the voltage versus time diagram 602 illustrates this increase in voltage as occurring instantaneously, it will be appreciated by one skilled in the art that in implementation there may be a time delay due to imperfections in an electronic circuit.

[0055] In at least some implementations for this second configuration of the example temperature-sensitive oscillator 106, the third switch complex 416-3 continues to electrically connect the first RC circuit 404-1 to the first reference voltage 414-1. In alternative implementations (not illustrated), the third switch complex 416-3 electrically disconnects the first RC circuit 404-1 from the first reference voltage 414-1. Likewise, in at least some implementations, the fourth switch complex 416-4 continues to electrically connect the second RC circuit 404-2 to the second supply voltage 412-2. In alternative implementations (not illustrated), the fourth switch complex 416-4 electrically disconnects the second RC circuit 404- 2 from the second supply voltage 412-2.

[0056] Fig. 7 illustrates an example circuit diagram 700 of an example temperature-sensitive oscillator 106 in a third configuration and an associated voltage versus time diagram 702 in accordance with one or more implementations. As illustrated, the example circuit diagram 700 of the example temperature-sensitive oscillator 106 is similar to the example circuit diagram 600 from Fig. 6 but includes a particular switch configuration at the first switch complex416-1, the second switch complex 416-2, the third switch complex 416-3, and the fourth switch complex 416-4.

[0057] In particular, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2 and after the discharging and charging by bypassing the first resistor 408-1 and the second resistor 408-2, the first switch complex 416-1 electrically disconnects the first RC circuit 404-1 from the first reference voltage 414-1 and the second switch complex electrically disconnects the second RC circuit 404-2 from the second supply voltage 412-2. Further, the third switch complex 416-3 electrically connects the first RC circuit 404-1 to the first supply voltage 412-1 and the fourth switch complex 416-4 electrically connects the second RC circuit 404-2 to the second reference voltage 414-2. In this way, the Vn voltage 606 may gradually decay and the Vp voltage 604 may gradually increase, as illustrated in the voltage versus time diagram 702.

[0058] Fig. 8 illustrates an example circuit diagram 800 of an example temperature-sensitive oscillator 106 in a fourth configuration and an associated voltage versus time diagram 802 in accordance with one or more implementations. As illustrated, the example circuit diagram 800 of the example temperature-sensitive oscillator 106 is similar to the example circuit diagram 700 from Fig. 7 but includes a particular switch configuration at the first switch complex 416-1 and the second switch complex 416-2.

[0059] In particular, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, the first switch complex 416-1 electrically connects the noninverting input 406-1 to the first supply voltage 412-1. As a result, as illustrated in the voltage versus time diagram 802, the Vp voltage 604 increases to the first supply voltage 412-1. For example, the first switch complex 416-1, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, switches the first capacitor 410-1 from being charged towards the first supply voltage 412-1 via the first resistor 408-1 to being charged towards the first supply voltage 412-1 via a low-resistance path that bypasses the first resistor 408-1 effective to increase a first capacitor voltage of the first capacitor 410-1 (and the Vp voltage 604) to approximately the first supply voltage 412-1. Although the voltage versus time diagram 802 illustrates this increase in voltage as occurring instantaneously, it will be appreciated by one skilled in the art that in implementation there may be a time delay due to imperfections in an electronic circuit.

[0060] Further, based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2, the second switch complex 416-2 electrically connects the inverting input 406-2 to the second reference voltage 414-2. As a result, as illustrated in the voltage versus time diagram 802, the Vn voltage 606 decreases to the second reference voltage 414-2. Forexample, the second switch complex 416-2, based on a change in polarity between the noninverting input 406-1 and the inverting input 406-2, switches the second capacitor 410-2 from being discharged towards the second reference voltage 414-2 via the second resistor 408-2 to being discharged towards the second reference voltage 414-2 via a low-resistance path that bypasses the second resistor 408-2 effective to decrease a second capacitor voltage of the second capacitor 410-2 (and the Vn voltage 606) to approximately the second reference voltage 414-2. Although the voltage versus time diagram 802 illustrates this decrease in voltage as occurring instantaneously, it will be appreciated by one skilled in the art that in implementation there may be a time delay due to imperfections in an electronic circuit.

[0061] In at least some implementations for this fourth configuration of the example temperature-sensitive oscillator 106, the third switch complex 416-3 continues to electrically connect the first RC circuit 404- 1 to the first supply voltage 412-1. In alternative implementations (not illustrated), the third switch complex 416-3 electrically disconnects the first RC circuit 404- 1 from the first supply voltage 412-1. Likewise, in at least some implementations, the fourth switch complex 416-4 continues to electrically connect the second RC circuit 404-2 to the second reference voltage 414-2. In alternative implementations (not illustrated), the fourth switch complex 416-4 electrically disconnects the second RC circuit 404-2 from the second reference voltage 414-2.

[0062] The example temperature-sensitive oscillator 106 may repeat this process (e.g., Figs. 5-8) based on a change in polarity between the non-inverting input 406-1 and the inverting input 406-2 for a predetermined amount of time (e.g., time frame tl , time frame t3).

[0063] Fig. 9 illustrates an example voltage versus time diagram 900 and an example variable frequency output versus time diagram 902 in accordance with one or more implementations. As illustrated, a value of the variable frequency output may be based on a polarity between the non-inverting input 406-1 (Vp voltage 604) and the inverting input 406-2 (Vn voltage 606). For example, when the non-inverting input 406-1 includes a higher voltage than the inverting input 406-2, the comparator 402 outputs a binary value of one. When the inverting input 406-2 includes a higher voltage than the non-inverting input 406-1 , the comparator 402 outputs a binary value of zero. In alternative implementations, the comparator 402 may be configured to output different values or encoded signals.

[0064] Still further, when a time between a first change in polarity between the noninverting input 406-1 and the inverting input 406-2 and a second change in polarity between the non-inverting input 406-1 and the inverting input 406-2 (e.g., time Tl) is condensed due to, for example, an increase in temperature at the first resistor 408-1 and / or the second resistor 408-2, the variable frequency output may increase in frequency. Similarly, when a time between a firstchange in polarity between the non-inverting input 406-1 and the inverting input 406-2 and a second change in polarity between the non-inverting input 406-1 and the inverting input 406-2 (e.g., time Tl) is extended due to, for example, a decrease in temperature at the first resistor 408- 1 and / or the second resistor 408-2, the variable frequency output may decrease in frequency.

[0065] Having generally described schemes, techniques, and hardware directed at temperature sensing for semiconductor devices, this discussion now turns to example methods.Example Method for a Temperature Sensing on a Semiconductor Device

[0066] An example method is described below with reference to the flow diagram of Fig. 10. Aspects of this method may be implemented in, for example, hardware (e.g., fixed logic circuitry or a processor in conjunction with a memory), firmware, or some combination thereof. The processes may be realized using one or more of the apparatuses or components shown in Figs. 1-9, which may be further divided, combined, and so on. The devices and components described below with respect to this figure generally represent firmware; hardware, such as user or server devices, packaged modules, IC chips, or circuits; or a combination thereof. Thus, this figure illustrates some of the many possible systems or apparatuses capable of implementing the described methods.

[0067] For this flow diagram, the orders in which operations are shown and / or described are not intended to be construed as a limitation. Any number or combination of the described method operations can be combined in any order to implement a given method, or an alternative method. Operations may also be omitted or added to the described methods. Further, described operations can be implemented in fully or partially overlapping manners. Although two flow diagrams are described separately, their operations may be interrelated.

[0068] Fig. 10 illustrates, with a flow diagram 1000, an example method for temperature sensing on a semiconductor device. The operations of the flow diagram 1000 can be performed by, for example, at least one of the temperature-sensitive oscillator 106, the counter module 306, the conversion module 308, and / or components thereof of a temperature sensor 304 (e.g., of Fig. 3). At 1002, the temperature-sensitive oscillator 106 generates a first clock signal (e.g., an output having a first value). In implementations, the first clock signal is an output of a comparator (e.g., comparator 402).

[0069] At 1004, the temperature-sensitive oscillator 106 (e.g., at a comparator) determines a first change in polarity between a non-inverting input and an inverting input. For example, the temperature-sensitive oscillator 106 may determine that a voltage between the non-inverting input and the inverting input is equivalent, a voltage of the non-inverting input is larger than the inverting input, and / or a voltage of the inverting input is larger than the non-inverting input.

[0070] At 1006, responsive to the determination of the first change in polarity and until a determination of a second change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator 106, the temperature-sensitive oscillator 106 generates a second clock signal (e.g., an output having a second value). In implementations, the temperature-sensitive oscillator 106 generates a transition at a clock level (e.g., if the clock level was high prior to the first change in polarity, then the temperature-sensitive oscillator 106 can change, at 1006, the clock level to low). In still further implementations, the second clock signal is an output of a comparator (e.g., comparator 402).

[0071] At 1008, responsive to the determination of the first change in polarity and until a determination of a second change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator 106, a first capacitor (e.g., first capacitor 410-1) is charged, via a first resistor (e.g., first resistor 408-1), towards a first voltage at a first rate, the charging at the first rate based on a temperature of the first resistor.

[0072] At 1010, responsive to the determination of the first change in polarity and until a determination of a second change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator 106, a second capacitor (e.g., second capacitor 410- 2) is discharged, via a second resistor (e.g., second resistor 408-2), towards a second voltage at a second rate, the discharging at the second rate based on a temperature of the second resistor.

[0073] At 1012, the temperature-sensitive oscillator 106 may continue to determine a sequence of changes in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator 106 effective to cause the temperature-sensitive oscillator 106 to generate a variable frequency output (e.g., variable frequency output 108) comprising at least the first clock signal (e.g., a first value having a binary value of one) and the second clock signal (e.g., a second value having a binary value of zero). It will be understood by one skilled in the art that the variable frequency output may be a single and, optionally, continuous clock signal that includes the first clock signal and the second clock signal. For example, the first clock signal may include high levels (e.g., one’s) of the variable frequency output and the second clock signal may include low levels (e.g., zero’s) of the variable frequency output.

[0074] At 1014, the counter module 306 determines one or more attributes associated with the variable frequency output. For example, the counter module 306 may determine a number of rising edges in the variable frequency output within a predetermined duration of time.

[0075] At 1016, the conversion module 308 generates, based on the determined one or more attributes, a value corresponding to a temperature of the temperature-sensitive oscillator 106. In implementations, the temperature of the temperature-sensitive oscillator 106 includes the temperature of the first resistor and / or the temperature of the second resistor.Example Electronic Device

[0076] Fig. 11 illustrates various components of an example electronic device 1100 (e.g., electronic device 102) that can implement temperature sensing for semiconductor devices in accordance with one or more described aspects. The electronic device 1100 may be implemented as any one or combination of a fixed, mobile, stand-alone, or embedded device; in any form of a consumer, computer, portable, user, server, communication, phone, navigation, gaming, audio, camera, messaging, media playback, and / or other type of electronic device 1100, such as the smartphone that is depicted Fig. 1 as the electronic device 102.

[0077] The electronic device 1100 can include one or more communication transceivers 1102 that enable wired and / or wireless communication of device data 1104, such as received data, transmitted data, or other information as described above. Example communication transceivers 1102 include NFC transceivers, wireless personal area network (PAN) (WPAN) radios compliant with various IEEE 802.15 (Bluetooth™) standards, wireless local area network (LAN) (WLAN) radios compliant with any of various IEEE 802.11 (Wi-Fi™) standards, wireless wide area network (WAN) (WWAN) radios (e.g., those that are 3 GPP-compliant) for cellular telephony, wireless metropolitan area network (MAN) (WMAN) radios compliant with various IEEE 802.16 (WiMAX™) standards, infrared (IR) transceivers compliant with an Infrared Data Association (IrDA) protocol, and wired local area network (LAN) Ethernet transceivers.

[0078] The electronic device 1100 may also include one or more data input ports 1106 via which any type of data, media content, and / or other inputs can be received, such as user-selectable inputs, messages, applications, music, television content, recorded video content, and any other type of audio, video, and / or image data received from any content and / or data source. The data input ports 1106 may include USB ports, coaxial cable ports, fiber optic ports for optical fiber interconnects or cabling, and other serial or parallel connectors (including internal connectors) for flash memory, DVDs, CDs, and the like. These data input ports 1106 may be used to couple the electronic device 1100 to components, peripherals, or accessories such as keyboards, microphones, cameras, or other sensors.

[0079] The electronic device 1100 of this example includes at least one processor 1108 (e.g., any one or more of application processors, microprocessors, digital-signal processors (DSPs), controllers, and the like), which can include a combined processor and memory system (e.g., implemented as part of an SoC), that processes (e.g., executes) computer-executable instructions to control operation of the device. The processor 1108 may be implemented as an application processor, embedded controller, microcontroller, security processor, and the like. Generally, a processor or processing system may be implemented at least partially in hardware, which can include components of an integrated circuit or on-chip system, a digital-signalprocessor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a complex programmable logic device (CPLD), and other implementations in silicon and / or other materials.

[0080] Alternatively or additionally, the electronic device 1100 can be implemented with any one or combination of electronic circuitry, which may include software, hardware, firmware, or fixed logic circuitry that is implemented in connection with processing and control circuits, which are generally indicated at 1110 (as electronic circuitry 1110). This electronic circuitry 1110 can implement executable or hardware-based modules (not shown in Fig. 11), such as through processing / computer-executable instructions stored on computer-readable media, through logic circuitry and / or hardware (e.g., such as an FPGA), and so forth.

[0081] Although not shown, the electronic device 1100 can include a system bus, interconnect, crossbar, or data transfer system that couples the various components within the device 1100. A system bus or interconnect can include any one or a combination of different bus structures, such as a memory bus or memory controller, a peripheral bus, a universal serial bus, and / or a processor or local bus that utilizes any of a variety of bus architectures.

[0082] The electronic device 1100 also includes one or more memory devices 1112 that enable data storage, examples of which include random access memory (RAM), non-volatile memory (e.g., read-only memory (ROM), flash memory, EPROM, and EEPROM), and a disk storage device. Thus, the memory device(s) 1112 can be distributed across different logical storage levels of a system as well as at different physical components. The memory device(s) 1112 provide data storage mechanisms to store the device data 1104, other types of code and / or data, and various device applications 1120 (e.g., software applications or programs). For example, an operating system 1114 can be maintained as software instructions within the memory device 1112 and executed by the processor 1108.

[0083] In some implementations, the electronic device 1100 also includes an audio and / or video processing system 1116 that processes audio data and / or passes through the audio and video data to an audio system 1118 and / or to a display system 1122 (e.g., a video buffer or a screen of a smartphone or camera). The audio system 1118 and / or the display system 1122 may include any devices that process, display, and / or otherwise render audio, video, display, and / or image data. Display data and audio signals can be communicated to an audio component and / or to a display component via an RF (radio frequency) link, S -video link, HDMI (high-definition multimedia interface), composite video link, component video link, DVI (digital video interface), analog audio connection, or other similar communication link, such as a media data port 1124. In some implementations, the audio system 1118 and / or the display system 1122 are external or separate components of the electronic device 1100. Alternatively, the display system 1122 can be anintegrated component of the example electronic device 1100, such as part of an integrated touch interface.

[0084] The electronic device 1100 of Fig. 11 is an example implementation of the electronic device 102 of Fig. 1. The electronic device 1100 further includes the semiconductor device 104 and temperature-sensitive oscillator 106. One or more of the processor(s) 1108, memory device 1112, communication transceivers 1102, audio / video processing 1116, and / or other components may be implemented on the semiconductor device 104 (e.g., an SoC). As described above, one or more of these circuitry components may be part of a same IC chip such as that of the processor 1108 or may instead be located on separate dies.Additional Examples

[0085] In the following section, additional examples are provided.

[0086] Example 1 : A temperature sensor comprising: an oscillator configured to generate a variable frequency output based on a temperature, the oscillator comprising: a first circuit including a first temperature-sensitive resistor and a first capacitor, the first capacitor configured to charge towards a first voltage at a first rate based on the temperature at the first temperaturesensitive resistor; a second circuit including a second temperature-sensitive resistor and a second capacitor, the second capacitor configured to discharge towards a second voltage at a second rate based on the temperature at the second temperature-sensitive resistor, the second voltage less than the first voltage; a comparator having a non-inverting input operatively coupled to the first circuit and an inverting input operatively coupled to the second circuit; and at least one switch configured to switch, based on a change in polarity between the non-inverting input and the inverting input, (i) the first circuit from being charged towards the first voltage to being discharged towards the second voltage and (ii) the second circuit from being discharged towards the second voltage to being charged towards the first voltage effective to cause the oscillator to generate the variable frequency output; a counter module operatively coupled to the oscillator and configured to determine one or more attributes associated with the variable frequency output; and a conversion module operatively coupled to the counter module and configured to generate, based on the determined one or more attributes associated with the variable frequency output, a value corresponding to the temperature.

[0087] Example 2: The temperature sensor of example 1, wherein the first capacitor is configured to charge towards the first voltage at the first rate via the first temperature-sensitive resistor, and the second capacitor is configured to discharge towards the second voltage at the second rate via the second temperature-sensitive resistor. 1

[0088] Example 3: The temperature sensor of example 1 or 2, wherein the non-inverting input is operatively coupled to the first circuit at a node between the first capacitor and the first temperature-sensitive resistor, and the inverting input is operatively coupled to the second circuit at a node between the second capacitor and the second temperature-sensitive resistor.

[0089] Example 4: The temperature sensor of any of the preceding examples, wherein the first capacitor is configured to charge towards the first voltage at the first rate based on the temperature at the first temperature-sensitive resistor from the second voltage; and the second capacitor is configured to discharge towards the second voltage at the second rate based on the temperature at the second temperature-sensitive resistor from the first voltage.

[0090] Example 5: The temperature sensor of any of the preceding examples, wherein the counter module configured to determine one or more attributes associated with the variable frequency output is configured to determine a number of rising edges in the variable frequency output within a predetermined time frame.

[0091] Example 6: The temperature sensor of any of the preceding examples, wherein the conversion module configured to generate the value corresponding to the temperature is configured to generate the value corresponding to the temperature by converting the number of rising edges in the variable frequency output within the predetermined time frame using a second order or third order polynomial.

[0092] Example 7: The temperature sensor of any of the preceding examples, wherein the first voltage comprises a supply voltage (VDD) and the second voltage comprises a ground voltage.

[0093] Example 8: The temperature sensor of any of the preceding examples, wherein the first temperature-sensitive resistor and the second temperature-sensitive resistor comprise routing metal layers of a power grid network.

[0094] Example 9: The temperature sensor of any of the preceding examples, wherein: the first temperature-sensitive resistor comprises a first temperature coefficient of resistance and the second temperature-sensitive resistor comprises a second temperature coefficient of resistance, the first temperature coefficient of resistance being approximately equal to the second temperature coefficient of resistance; and the first capacitor comprises a first capacitance and the second capacitor comprises a second capacitance, the first capacitance being approximately equal to the second capacitance.

[0095] Example 10: The temperature sensor of any of the preceding examples, wherein the first circuit and the second circuit are integrated into a third circuit.

[0096] Example 11 : The temperature sensor of any of the preceding examples, wherein a duration of time between a first change in polarity between the non-inverting input and theinverting input and a second change in polarity between the non-inverting input and the inverting input is approximated by time [T]: T = RC x ln(2) with R denoting at least one of a first resistance of the first temperature-sensitive resistor or a second resistance of the second temperature-sensitive resistor, and C denoting at least one of a first capacitance of the first capacitor or a second capacitance of the second capacitor.

[0097] Example 12: The temperature sensor of any of the preceding examples, wherein the oscillator comprises a resistor-capacitor (RC) relaxation oscillator.

[0098] Example 13: The temperature sensor of any of the preceding examples, wherein the oscillator is configured to provide the variable frequency output having (i) a first value for a first polarity between the non-inverting input and the inverting input or (ii) a second value for a second polarity between the non-inverting input and the inverting input.

[0099] Example 14: The temperature sensor of example 13, wherein the first value is a binary value of one and the second value is a binary value of zero.

[0100] Example 15: The temperature sensor of any of the preceding examples, wherein before the at least one switch is configured to switch (i) the first circuit from being charged towards the first voltage to being discharged towards the second voltage and (ii) the second circuit from being discharged towards the second voltage to being charged towards the first voltage, the at least one switch is further configured to: switch, based on a change in polarity between the noninverting input and the inverting input, the first capacitor of the first circuit from being charged towards the first voltage via the first temperature-sensitive resistor towards being charged towards the first voltage through a low-resistance path that bypasses the first temperature-sensitive resistor effective to increase a first capacitor voltage of the first capacitor to approximately the first voltage; and switch, based on a change in polarity between the non-inverting input and the inverting input, the second capacitor of the second circuit from being discharged towards the second voltage via the second temperature-sensitive resistor to being discharged towards the second voltage through a low-resistance path that bypasses the second temperature-sensitive resistor effective to decrease a second capacitor voltage of the second capacitor to approximately the second voltage.

[0101] Example 16: The temperature sensor of any of the preceding examples, wherein the temperature sensor is mounted on a semiconductor device.

[0102] Example 17: An electronic device comprising the temperature sensor of any of examples 1-16.

[0103] Example 18: The electronic device of claim 17, further comprising at least one processor; and a computer-readable storage medium comprising instructions that when executed by the at least one processor cause the at least one processor to: determine the temperature of atleast one element based on the value corresponding to the temperature; and adjust, based on the determined temperature, at least one of a current or a voltage received by the at least one element.

[0104] Example 19: A method comprising: generating a first clock signal; determining a first change in polarity between a non-inverting input and an inverting input of a temperaturesensitive oscillator; responsive to determining the first change in polarity and until determining a second change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator: generating a second clock signal; charging, via a first resistor, a first capacitor towards a first voltage at a first rate, the charging at the first rate based on a temperature of the first resistor; and discharging, via a second resistor, a second capacitor towards a second voltage at a second rate, the discharging at the second rate based on a temperature of the second resistor; continuing to determine a sequence of changes in polarity between the noninverting input and the inverting input of the temperature-sensitive oscillator effective to cause the temperature-sensitive oscillator to generate a variable frequency output comprising at least the first clock signal and the second clock signal; determining one or more attributes associated with the variable frequency output; and generating, based on the determined one or more attributes, a value corresponding to a temperature of the temperature-sensitive oscillator.

[0105] Example 20: The method of example 19, wherein the first capacitor is electrically connected to a first circuit and the second capacitor is electrically connected to a second circuit, the method further comprising: switching, responsive to the first change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator, a first switch of the first circuit to be electrically connected to the first voltage and a second switch of the second circuit to be electrically connected to the second voltage.

[0106] Example 21: The method of example 19 or 20, further comprising: switching, (i) responsive to the first change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator and (ii) prior to charging the first capacitor, a third switch of the first circuit such that the first capacitor is charged towards the first voltage through a low-resistance path that bypasses the first resistor effective to increase a first capacitor voltage of the first capacitor to approximately the first voltage.

[0107] Example 22: The method of example 21, further comprising: switching, (i) responsive to the first change in polarity between the non-inverting input and the inverting input of the temperature-sensitive oscillator and (ii) prior to discharging the second capacitor, a fourth switch of the second circuit such that the second capacitor is discharged towards the second voltage through a low-resistance path that bypasses the second resistor effective to decrease a second capacitor voltage of the second capacitor to approximately the second voltage.

[0108] Example 23: The method of any of examples 19-22, wherein charging the first capacitor towards the first voltage at the first rate is approximated by: Vn(t) = VDD(l-e-t / RC) with Vn denoting voltage, t denoting time, VDD denoting a supply voltage, R denoting a resistance, and C denoting a capacitance.

[0109] Example 24: The method of any of examples 19-23, wherein discharging the second capacitor towards the second voltage at the second rate is approximated by: Vp(t) = VDD(e-t / RC) with Vp denoting voltage, t denoting time, VDD denoting a supply voltage, R denoting a resistance, and C denoting a capacitance.

[0110] Example 25: The method of any of examples 19-24, wherein a duration of time between the first change in polarity and the second change in polarity is approximated by time [T]: T = RC x ln(2) with R denoting a resistance, and C denoting a capacitance.

[0111] Example 26: The method of any of examples 19-25, wherein determining one or more attributes associated with the variable frequency output comprises determining a number of rising edges in the variable frequency output within a predetermined time frame.

[0112] Example 27: The method of example 26, wherein generating the value corresponding to the temperature of the temperature-sensitive oscillator comprises converting the number of rising edges in the variable frequency output within the predetermined time frame using a second order or third order polynomial.

[0113] Example 28: A temperature sensor configured to perform the method of any of examples 19-27, and wherein the temperature sensor is mounted on a semiconductor device.

[0114] Example 29: An electronic device comprising the temperature sensor of example 28.

[0115] Example 30: The method of any of examples 19-27, further comprising: generating a second value corresponding to a second temperature of a second temperature-sensitive oscillator; and determining, based on the value corresponding to the temperature of the temperature-sensitive oscillator and the second value corresponding to the second temperature of the second temperature-sensitive oscillator, a thermal profile of a semiconductor device.

[0116] Example 31: The method of example 30, further comprising: adjusting, based on the determined thermal profile, at least one of a current or a voltage received by at least one element on the semiconductor device.

[0117] Example 32: A non-transitory computer-readable storage medium storing one or more programs, the one or more programs comprising instructions, which, when executed by a computer system with one or more processors, cause the computer system to perform the method of example 30 or example 31.Conclusion

[0118] Unless context dictates otherwise, use herein of the word “or” may be considered use of an “inclusive or,” or a term that permits inclusion or application of one or more items that are linked by the word “or” (e.g., a phrase “A or B” may be interpreted as permitting just “A,” as permitting just “B,” or as permitting both “A” and “B”). Also, as used herein, a phrase referring to “at least one of’ a list of items refers to any combination of those items, including single members. For instance, “at least one of a, b, or c” can cover a, b, c, a-b, a-c, b-c, and a-b-c, as well as any combination with multiples of the same element (e.g., a-a, a-a-a, a-a-b, a-a-c, a-b-b, a-c-c, b-b, b-b-b, b-b-c, c-c, and c-c-c, or any other ordering of a, b, and c). Further, items represented in the accompanying figures and terms discussed herein may be indicative of one or more items or terms, and thus reference may be made interchangeably to single or plural forms of the items and terms in this written description.

[0119] Although implementations directed at temperature sensing for semiconductor devices have been described in language specific to certain features and / or methods, the subject of the appended claims is not necessarily limited to the specific features or methods described. Rather, the specific features and methods are disclosed as example implementations directed at temperature sensing for semiconductor devices.

Claims

CLAIMSWhat is claimed is:

1. A temperature sensor comprising: an oscillator configured to generate a variable frequency output based on a temperature, the oscillator comprising: a first circuit including a first temperature-sensitive resistor and a first capacitor, the first capacitor configured to charge towards a first voltage at a first rate based on the temperature at the first temperature-sensitive resistor; a second circuit including a second temperature-sensitive resistor and a second capacitor, the second capacitor configured to discharge towards a second voltage at a second rate based on the temperature at the second temperature-sensitive resistor, the second voltage less than the first voltage; a comparator having a non-inverting input operatively coupled to the first circuit and an inverting input operatively coupled to the second circuit; and at least one switch configured to switch, based on a change in polarity between the non-inverting input and the inverting input, (i) the first circuit from being charged towards the first voltage to being discharged towards the second voltage and (ii) the second circuit from being discharged towards the second voltage to being charged towards the first voltage effective to cause the oscillator to generate the variable frequency output; a counter module operatively coupled to the oscillator and configured to determine one or more attributes associated with the variable frequency output; and a conversion module operatively coupled to the counter module and configured to generate, based on the determined one or more attributes associated with the variable frequency output, a value corresponding to the temperature.

2. The temperature sensor of claim 1, wherein the counter module configured to determine one or more attributes associated with the variable frequency output is configured to determine a number of rising edges in the variable frequency output within a predetermined time frame.

3. The temperature sensor of claim 2, wherein the conversion module configured to generate the value corresponding to the temperature is configured to generate the value corresponding to the temperature by converting the number of rising edges in the variable frequency output within the predetermined time frame using a second order or third order polynomial.

4. The temperature sensor of any of the preceding claims, wherein the first voltage comprises a supply voltage (VDD) and the second voltage comprises a ground voltage.

5. The temperature sensor of any of the preceding claims, wherein the first temperature-sensitive resistor and the second temperature-sensitive resistor comprise routing metal layers.

6. The temperature sensor of any of the preceding claims, wherein: the first temperature-sensitive resistor comprises a first temperature coefficient of resistance and the second temperature-sensitive resistor comprises a second temperature coefficient of resistance, the first temperature coefficient of resistance being approximately equal to the second temperature coefficient of resistance; and the first capacitor comprises a first capacitance and the second capacitor comprises a second capacitance, the first capacitance being approximately equal to the second capacitance.

7. The temperature sensor of any of the preceding claims, wherein the first circuit and the second circuit are integrated into a third circuit.

8. The temperature sensor of any preceding claim, wherein a duration of time between a first change in polarity between the non-inverting input and the inverting input and a second change in polarity between the non-inverting input and the inverting input is approximated by time [T]:T = RC x ln(2) with R denoting at least one of a first resistance of the first temperature-sensitive resistor or a second resistance of the second temperature-sensitive resistor, andC denoting at least one of the first capacitance of the first capacitor or the second capacitance of the second capacitor.

9. The temperature sensor of any of the preceding claims, wherein the oscillator comprises a resistor-capacitor (RC) relaxation oscillator.

10. The temperature sensor of any of the preceding claims, wherein the oscillator is configured to provide the variable frequency output having (i) a first value for a first polarity between the non-inverting input and the inverting input or (ii) a second value for a second polarity between the non-inverting input and the inverting input.

11. The temperature sensor of claim 10, wherein the first value is a binary value of one and the second value is a binary value of zero.

12. The temperature sensor of any of the preceding claims, wherein before the at least one switch is configured to switch (i) the first circuit from being charged towards the first voltage to being discharged towards the second voltage and (ii) the second circuit from being discharged towards the second voltage to being charged the first voltage, the at least one switch is further configured to: switch, based on a change in polarity between the non-inverting input and the inverting input, the first capacitor of the first circuit from being charged towards the first voltage via the first temperature-sensitive resistor to being charged towards the first voltage through a low-resistance path that bypasses the first temperature-sensitive resistor effective to increase a first capacitor voltage of the first capacitor to approximately the first voltage; and switch, based on a change in polarity between the non-inverting input and the inverting input, the second capacitor of the second circuit from being discharged towards the second voltage via the second temperature-sensitive resistor to being discharged towards the second voltage through a low-resistance path that bypasses the second temperature-sensitive resistor effective to decrease a second capacitor voltage of the second capacitor to approximately the second voltage.

13. The temperature sensor of any of the preceding claims, wherein the temperature sensor is mounted on a semiconductor device.

14. An electronic device comprising the temperature sensor of any of claims 1-13.

15. The electronic device of claim 14, further comprising: at least one processor; and a computer-readable storage medium comprising instructions that when executed by the at least one processor cause the at least one processor to: determine a temperature of at least one element based on the value corresponding to the temperature; and adjust, based on the determined temperature, at least one of a current or a voltage received by the at least one element.

Images