Atmospheric pressure plasma removal of oxidation from metallic contacts for improved electrical and mechanical bonding
Patent Information
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- SURFX TECHNOLOGIES LLC
- Filing Date
- 2023-07-17
- Publication Date
- 2026-05-27
AI Technical Summary
Existing technologies face challenges in efficiently removing oxidation from metallic contacts, particularly copper, tin, silver, and indium oxides, for improved electrical and mechanical bonding in electronic assemblies like flip chips, without causing damage through ion bombardment, electrostatic discharge, or particle contamination.
The use of an atmospheric pressure plasma apparatus that applies activated hydrogen to remove oxidation from metallic contacts, creating a deoxidized metal surface, followed by thermocompression bonding in an inert gas environment to prevent reoxidation.
This method effectively removes oxidation from metallic contacts, enhancing mechanical and electrical bonding strength while maintaining the integrity of semiconductor devices by avoiding damage from ion bombardment, electrostatic discharge, or particle contamination.
Smart Images

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