Atmospheric pressure plasma removal of oxidation from metallic contacts for improved electrical and mechanical bonding

EP4747906A1Pending Publication Date: 2026-05-27SURFX TECHNOLOGIES LLC
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Patent Information

Authority / Receiving Office
EP · EP
Patent Type
Applications
Current Assignee / Owner
SURFX TECHNOLOGIES LLC
Filing Date
2023-07-17
Publication Date
2026-05-27

AI Technical Summary

Technical Problem

Existing technologies face challenges in efficiently removing oxidation from metallic contacts, particularly copper, tin, silver, and indium oxides, for improved electrical and mechanical bonding in electronic assemblies like flip chips, without causing damage through ion bombardment, electrostatic discharge, or particle contamination.

Method used

The use of an atmospheric pressure plasma apparatus that applies activated hydrogen to remove oxidation from metallic contacts, creating a deoxidized metal surface, followed by thermocompression bonding in an inert gas environment to prevent reoxidation.

Benefits of technology

This method effectively removes oxidation from metallic contacts, enhancing mechanical and electrical bonding strength while maintaining the integrity of semiconductor devices by avoiding damage from ion bombardment, electrostatic discharge, or particle contamination.

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Abstract

Methods and apparatuses for plasma treatment of electrical interconnects of electronic assemblies for integrated circuits such as flip chips are disclosed. A method of interconnect bonding includes applying a plasma comprising activated hydrogen via an atmospheric pressure plasma applicator to a metallic contact supported on a substrate to remove oxidation and create a newly deoxidized metal surface. The metallic contact can be bonded to another via reflow or thermocompression bonding. An inert gas environment can be formed within an enclosure for application of the plasma and / or bonding of the metallic contact.
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