Method and installation for detecting the gloss of material haze

Abstract

The present invention provides a method for detecting haze gloss in materials, comprising: optionally, a preliminary inspection, which is carried out on materials (3), to identify materials (3) without visible surface defects; and a haze gloss inspection, to detect haze gloss in the materials; wherein an optical filter module (4) is configured in a haze gloss inspection installation to filter the photoluminescence signal from the materials (3) in the light path to the detector (5), so as to prevent the photoluminescence signal from being detected by the detector (5). The invention further provides a haze gloss detection installation. Using the invented haze gloss detection method and installation, it is possible to accurately determine the value and / or distribution of haze gloss in the materials.

Description

Description Title of the invention: Method and installation for detecting brightness sail materials technical field

[0001] The present invention relates to the field of materials detection. More specifically- Specifically, the present invention relates to a detection method and installation of the surface of materials, and more specifically, a process and an installation of material gloss detection. Background

[0002] — With the development of science and technology, a smooth nature of the surface of materials (such as semiconductor wafers, glass or the ceramics, the term "slice" here being the French translation of the English term "wafer") is highly required in certain fields. For example, in the In the fields of electronics and communication, the quality requirements of The surface area of ​​semiconductor wafers is increasing. Since the creation of electronic components in the 1950s, materials Semiconductors have been widely used in modern production and in our In everyday life, their importance is evident. With miniaturization and integration continuous semiconductor devices, the surface condition of the substrates has increasingly significant effects on the properties of the devices. In particular, Higher surface roughness of the substrates will affect the mobility of the carrier, by- resulting in reduced mobility and an unduly longer delay. Furthermore, a Higher surface roughness of the substrates will also increase the re- speed combination of carriers on the surface, which will result in a shorter lifespan Out-of-equilibrium carriers and poor device performance. It is clear that a good substrate surface condition is essential for performance optimal electronic devices.

[0003] = A "veil sheen" (or "surface haze") on the surface of a material made reference to a phenomenon of non-directional light scattering caused by mor- surface phology (i.e., microroughness) of materials (for example the slices) and by imperfections on or near the surface in strong concentration. In general, "sail sheen" is used to characterize quality irregularity on a scale below the detection limits of the size of surface particles. During the manufacturing process of certain materials with On a smooth surface (such as substrates), a hazy sheen is inevitable. The sheen of The haze is caused by the micro-roughness of a material's surface, and directly affects The material's performance, for example by altering the epitaxial quality of the substrate, which in turn affects the quality of the resulting epitaxial layer and the device. Therefore, during production, the precise acquisition of the distribution and gloss value of a material is of paramount importance for controlling and improving the material's surface quality. Currently, surface inspection techniques are primarily based on laser scattering; and processes or installations based on these techniques can detect imperceptible surface properties. To test these properties, the laser is shone onto the surface of the material to be inspected at a specific angle, while simultaneously the sample being inspected or the detector rotates at high speed; the detector collects the light scattered in all directions; and finally, the collected light signals are analyzed to obtain information about the material's surface properties.This method is quite effective for detecting particles on the surface of materials or materials with relatively high roughness, but it cannot efficiently and accurately detect micro-roughness such as haze, because the detection of haze signals in prior art is often disrupted by various factors, such as surface absorption, which affects the accuracy of haze inspection results. Accurately obtaining the haze signal for precise surface inspection has always been difficult. As described above, problems can arise when existing surface inspection processes or facilities are used to detect haze gloss. Conventional surface inspection processes or facilities are primarily designed for detecting larger roughnesses (e.g., particles) on the surface of materials (such as wafers). For micro-roughnesses, such as haze gloss expressed in values ​​on the order of 10⁻⁶ ppm, the signals are generally difficult to distinguish from noise signals by conventional instruments. Therefore, even if a haze gloss signal were captured, the detected result may be a "false" haze gloss because the noise signal has not been excluded. Such an inspection result has little reference value for wafer surface quality control. The inventors found that inspecting the veil gloss of materials, especially compound semiconductor wafers, using conventional surface inspection instruments might not have a valid reference significance — because prior art methods do not take into account surface interference caused by the photoluminescence of the semiconductor material under laser irradiation. The inventors also observed that with the advancement of materials, during When performing gloss inspection on the surface of the material using existing inspection facilities, the photoluminescence of the materials can become one of the significant factors affecting the accuracy of detection. Photoluminescence refers to a phenomenon in which materials are excited to emit light by absorbing energy under irradiation from an external light source. Photoluminescence in semiconductors works as follows: the valence band of the material is filled with electrons—even in the case of impurity-free semiconductor materials; due to thermal or light excitation, electrons at the top of the valence band are excited into the conduction band, resulting in intrinsic conduction; then, electrons in the conduction band spontaneously transition from the conduction band to the valence band after lattice relaxation, while simultaneously emitting photons of a specific wavelength. This is the process by which photoluminescence occurs in semiconductor materials.For ceramics or glass (for example, luminescent glass, such as glass doped with luminescent materials), after the absorption of photons, there is also a similar photoluminescence process. As is well known in art, the photoluminescence wavelength of a material is determined by the band gap size of the material itself, and their specific relationship is written in the following formula (I): Aem = 1240 / Eg (D) in which Aen is the wavelength of photoluminescence, expressed in nm; Eg is the band gap size of the material, expressed in eV. In the formula above, the band gap Eg depends on the material, as shown in [Fig. 1]. In practice, once the material to be measured is determined, the photoluminescence wavelength can be calculated using this formula. It turns out that, as representatives of elementary semiconductor materials, indirect bandgap semiconductor materials, such as silicon (Si) (with a bandgap of 1.12 eV) and germanium (Ge) (with a bandgap of 0.67 eV), cannot generate photoluminescence and are therefore not taken into account. However, the inventors found that for compound semiconductor materials, particularly direct bandgap semiconductor materials comprising group III-V compound semiconductors such as gallium arsenide (GaAs) (with a bandgap of 1.42 eV) and indium phosphide (InP) (with a bandgap of 1.35 eV), under general detection conditions, the effects of the photoluminescence of these materials on the veil gloss inspection do not can be ignored. Since the wave vectors of the initial and final states of the direct bandgap semiconductor can be considered unchanged during the optical transition process and have high photoluminescence efficiency, and since its photoluminescence wavelength lies precisely within the sensitivity range of the conventional Si detector (or silicon photodetector), the luminescence effect would significantly affect the inspection of the veil gloss. Similarly, in the case of ceramics and glass (e.g., luminescent glass, such as glass doped with luminescent materials), the aforementioned problems can also arise. Compound semiconductors are widely used in numerous fields, including analog and digital mobile phones, pagers, base stations, wireless local area networks (LANs), satellite communication, and microwave communication. The application value of these products continues to grow with the emergence of communication technologies such as 5G. Quality control plays an increasingly important role in wafers made from these materials. Therefore, there is an increasing need for an efficient method for the precise detection of the gloss of material veils (e.g. wafers, in particular wafers of compound semiconductors) in the relevant field. Document CN111272773A discloses a high-resolution system for detecting surface defects on semiconductor wafers, along with a method and installation for inspecting the associated defects, based on offset illumination. However, this system is designed to detect semiconductor surface particles, not haze gloss. Document CN105870033A discloses a method for detecting surface scratches on polished semiconductor wafers. In this method, the wafer surface is irradiated with a pulsed laser, and an energy damage threshold is defined to enable rapid detection of scratches on the wafer surface. This method addresses scratches whose signal could be easily detected because their signal intensity is of the same order of magnitude as that of particles. However, it provides no information on inspecting haze gloss. Document CN112461861A discloses a method for evaluating the surface quality of a polished single-crystal silicon wafer, in which the haze gloss inspection is characterized by the ratio of light intensities between scattered light and laser emission, a method commonly used in the arts. However, it is primarily directed towards polished single-crystal silicon wafers, without considering that the light signal from scattered light, detected by the detector, may not originate entirely from the haze gloss (i.e., signals from other sources). (Interference may still be included in the detected optical signal). Therefore, the method as disclosed in this patent of invention still presents disadvantages for the accurate inspection of veil gloss, in particular for the accurate inspection of veil gloss of compound semiconductor wafers or direct bandgap semiconductor wafers. Based on the above analysis, problems may arise when existing general inspection procedures are used to accurately detect haze gloss distribution and / or material values ​​(such as semiconductor substrates, especially compound semiconductor substrates or direct bandgap semiconductor substrates), and therefore accurate haze gloss distribution and / or material value results cannot be obtained. The inventor observed that although the criteria for evaluating material qualification with respect to their haze properties vary depending on the different uses of the materials in the relevant field, due to interference signals, the distribution and detected values ​​of haze may be higher than the actual conditions on the material surface, or the actual haze conditions (particularly in the case of low haze) may be masked by interference signals and are therefore undetectable—in these cases, the results obtained by haze inspection are in fact "false." Or even, the tested material may be deemed unacceptable because of these false results. Thus, these inspection results would have no reference significance for material quality control.Furthermore, these inspection results would have no instructive significance when it comes to going back or tracing the origin of these problems. It is therefore necessary to improve the processes and facilities for detecting the material haze gloss (including its distribution and / or values) to obtain an accurate distribution and / or values ​​of the haze gloss. Summary of the invention The present invention aims to overcome one or more of the aforementioned drawbacks of the prior art, and provides an improved method and installation for detecting the haze gloss of materials. One aspect of the present invention provides a method for detecting the gloss of material veils, comprising: - optionally, a preliminary inspection, which is carried out on materials, in order to identify materials without visible surface defects; and - a haze gloss inspection, to detect haze gloss on materials; in which an optical filter module is configured in a sail gloss inspection installation to filter the photoluminescence signal from the materials in the path of light to the detector, so as to prevent the photoluminescence signal from being detected by the detector. In some embodiments, the inspection of the sail gloss includes irradiating the materials with incident light, which may be a laser of any wavelength, preferably a single-wavelength laser with a wavelength < 660 nm, more preferably < 490 nm. In some embodiments, the filtering enables the signal inspection to detect light having a wavelength shorter than the photoluminescence wavelength, preferably light having a wavelength not exceeding the photoluminescence wavelength less (=) 20 nm. In some embodiments, the filtering enables the detection of light having a wavelength in a range of incident light wavelength + 20 nm, preferably in a range of incident light wavelength + 10 nm, and more preferably a wavelength that is equal to the incident light wavelength in the signal detection step. In some embodiments, the material is any material having a smooth surface; preferably, the material is a semiconductor material, glass or ceramic; more preferably, the material is a semiconductor wafer; even more preferably, the semiconductor wafer has a band gap of 1.12 to 1.53 eV, preferably of 1.35 to 143 eV. In some embodiments, the semiconductor wafer is chosen from compound semiconductor wafers, preferably direct bandgap semiconductor wafers, more preferably an InP wafer or a GaÂs wafer. Another aspect of the present invention provides an installation for detecting a sheen of material haze, comprising: a material loading unit, including a sample holder to contain the material; a laser scanning unit, comprising a laser source for emitting incident light; preferably, the incident light can be a laser of any wavelength, preferably a single-wavelength laser with a wavelength < 660 nm, more preferably < 490 nm; a signal inspection unit, comprising a detector; preferably a detector that responds to a light signal with a wavelength of 280 to 1100 nm; preferably a detector that is a visible light detector, more A preferred Si detector or an integrated detector; and a data analysis unit, including software to analyze the signal detected by the signal inspection unit; in which the material haze detection installation further comprises an optical filter module, which is selected from a group consisting of filters, a filter coating or a combination thereof, preferably from a group consisting of low-pass filters, band-pass filters, a low-pass filter coating, a band-pass filter coating, or a combination thereof; preferably, the optical filter module comprises band-pass filters, a band-pass filter coating or a combination thereof; preferably, the optical filter module may be a decoupled module, or one or more filter coatings on the surface of the optical detector; the optical filter module is used to filter the photoluminescence signal of the material; the optical filter module is arranged before the detector in the direction of propagation of the light signal to be detected. In some embodiments, the optical filter module includes an optical element capable of selectively transmitting light having a wavelength less than the photoluminescence wavelength, preferably not exceeding (photoluminescence wavelength - 20 nm). In some embodiments, the optical filter module includes an optical element capable of selectively transmitting light having a wavelength in the range of incident light wavelength + 20 nm, preferably a wavelength in the range of incident light wavelength + 10 nm, more preferably a wavelength that is equal to the incident light wavelength. In some embodiments, the optical filter module is selected from a group consisting of a filter, a filter coating, and a combination thereof, preferably from a group consisting of a low-pass filter, a band-pass filter, a low-pass filter coating, a band-pass filter coating, and a combination thereof; preferably, the optical filter module is selected from a group consisting of a band-pass filter, a band-pass filter coating, and a combination thereof; preferably, the optical filter module may be a decoupled module, or filter coatings on the surface of the optical detector, or combinations thereof. In some embodiments, the optical filter module has a light signal transmittance > 50%, preferably > 95%, and more preferably > 99%. In some embodiments, the installation of the haze gloss detection materials is used to detect any smooth-surfaced material; preferably, the material is a semiconductor material, glass or ceramic; more preferably, the material is a semiconductor wafer; more preferably, the semiconductor wafer is a wafer made of a semiconductor material with a band gap of 1.12 to 1.53 eV, preferably 1.35 to 1.43 eV, preferably a wafer made of monatomic semiconductors or compound semiconductors, and preferably a wafer made of a direct band gap semiconductor material, and more preferably a wafer made of InP or GaÂs. The method and installation of the present invention make it possible to obtain an authentic and precise inspection of the sail gloss with respect to the distribution and / or values ​​by eliminating or reducing the interference caused by the photoluminescence of the material on inspection of the sail gloss. Brief description of the drawings [Fig.1] The [Fig.1] is a diagram of the energy band of a crystalline material. [Fig.2] Fig.2 is a diagram of the process according to the present invention. [Fig.3] Fig.3 is a diagram of the material haze detection installation according to the present invention, in which each number designates one of the following elements: 1: a laser source, 2: an electrostatic mandrel, 3: the material to be inspected (placed on the electrostatic mandrel 2), 4: an optical filter module, 5: a detector, 6: an incident light signal, 7: a light signal to be detected, 8: a data analysis unit. [Fig.4] Fig.4 shows the result of the haze gloss inspection carried out on a slice of InP (sulfur-doped) type N using the optical filter module according to the invention, as illustrated in Example 1. [Fig.5] The [Fig.5] shows the result of the veil gloss inspection performed on a slice of InP (sulfur-doped) type N without using an optical filter module, as illustrated in Example 1. [Fig.6] Fig.6 shows the result of the haze gloss inspection carried out on a slice of InP (sulfur-doped) type N using the optical filter module according to the invention, as illustrated in Example 2. [Fig.7] Fig.7 shows the result of the haze gloss inspection performed on the InP (sulfur-doped) N-type slice without using an optical filter module, as illustrated in Example 2. [Fig.8] Fig.8 shows the result of the haze gloss inspection carried out on the InP (undoped) N-type slice using the optical filter module according to the invention, as illustrated in Example 3. [Fig.9] Fig.9 shows the result of the haze gloss inspection performed on the InP (undoped) N-type slice without using an optical filter module, as illustrated in Example 3. [Fig.10] Fig.10 shows the result of the haze gloss inspection performed on N-type (silicon-doped) GaAs wafers using the optical filter module according to the invention, as illustrated in Example 4. [Fig.11] The [Fig.11] shows the result of the veil gloss inspection carried out on the N-type (silicon-doped) GaÂs wafer without using an optical filter module, as illustrated in Example 4. [Fig.12] Fig.12 shows the result of the haze gloss inspection carried out on the InP (sulfur-doped) N-type wafer using the optical filter module according to the invention, as illustrated in Example 5. [Fig.13] The [Fig.13] shows the result of the veil gloss inspection performed on a slice of InP (sulfur-doped) type N without using an optical filter module, as illustrated in Example 5. [Fig.14] Fig.14 shows the result of the haze gloss inspection carried out on a slice of InP (sulfur-doped) type N using the optical filter module according to the invention, as illustrated in Example 6. [Fig.15] The [Fig.15] shows the result of the haze gloss inspection performed on a slice of InP (sulfur-doped) type N without using an optical filter module, as illustrated in Example 6. [Fig.16] Fig.16 shows the result of the haze gloss inspection carried out on a slice of InP (sulfur-doped) type N using the optical filter module according to the invention, as illustrated in Example 7. [Fig.17] The [Fig.17] shows the result of the haze gloss inspection carried out on the InP (sulfur-doped) N-type slice without using an optical filter module, as illustrated in Example 7. [Fig.18] Fig.18 shows the result of the haze gloss inspection carried out on InP slices of type N (sulfur-doped) using the optical filter module according to the invention, as illustrated in Example 8. [Fig.19] The [Fig.19] shows the result of the veil gloss inspection carried out on the InP (sulfur-doped) N-type slice without using an optical filter module, as illustrated in Example 8. Detailed description The embodiments of the present invention will be described in detail below. The following embodiments are given solely by way of example and shall not be construed as limiting the present invention. Scope of protection The present invention is defined solely by the claims. Therefore, in implementing the present invention, not all features described in the following embodiments are necessarily included. Furthermore, within the scope of the present invention, there are multiple combinations of these features, and the general and preferred definitions may be combined. Novel technical solutions formed by such combinations are also encompassed by this disclosure. As shown in [Fig. 2], one aspect of the present invention provides a method for detecting the gloss of a material veil, comprising: - optionally, a preliminary inspection, which is carried out on materials, in order to identify materials without visible surface defects for the subsequent sheen inspection; and - a haze gloss inspection, to detect haze gloss on materials; In which an optical filter module is configured in a sail gloss inspection installation to filter the photoluminescence signal from the material in the light path to the detector, so as to prevent the photoluminescence signal from being detected. In some embodiments, the inspection of the haze is carried out via a haze inspection system. The haze inspection system is equipped with an optical filter module, which can filter the photoluminescence signal from the material, but does not affect the detection of the desired signal. As used in this document, the term "veil gloss" (or "haze") refers to a non-directional light scattering event caused by surface topography (i.e., microroughness) and highly concentrated imperfections on or near the surface. Generally, "veil gloss" is used to describe a surface irregularity condition that falls on a scale below the detectable limit of surface particles. Therefore, only samples that have passed surface graininess detection (during preliminary inspection) will undergo scan and detection for veil gloss. The haze values ​​and distribution reflect the degree of microroughness of the material surface. In some embodiments, the material is a semiconductor material, glass, or ceramic. In some embodiments, the material is preferably a semiconductor wafer, in particular a semiconductor wafer that has been cleaned and dried. In some embodiments, the glass is luminescent, and preferably glass with added luminescent material. As used in this document, the term "wafer" refers to a substrate (with or without an epitaxial layer) made of semiconductor or non-semiconductor materials. Semiconductors. Examples of wafers include, but are not limited to, single-crystal silicon, single-crystal germanium, gallium arsenide, or indium phosphide. In some embodiments, the wafer is a substrate (i.e., a bare wafer). In some embodiments, the wafer may also comprise one or more layers of different materials formed on the substrate. In some embodiments, the semiconductor wafer is a semiconductor substrate. In other embodiments, the semiconductor wafer can also be an epitaxial platelet. As used in this document, the term "substrate" refers to a clean single-crystal wafer with a specific lattice plane and suitable electrical, optical, and mechanical properties, which wafer is used to grow an epitaxial layer on it. In some embodiments, the semiconductor wafer has photoluminescent properties. As used in this document, the term "preliminary inspection" refers to the inspection / verification of the slice surface grain size. Preliminary inspection can be carried out by various methods or installations generally known in the art. In some embodiments, preliminary inspection is light-assisted inspection. As used in this document, the term "light-assisted inspection" refers to visually checking the slice surface under high-intensity light. In some embodiments, the luminance of the light source used in the preliminary inspection is within the conventional luminance range used for inspection in the art. Preferably, the luminance is not less than 300,000 lux. More preferably, the luminance is not less than 400,000 lux. As used in this document, the term "luminance" refers to the luminous flux of visible light received per unit area, i.e., luminous intensity, in lux (lx), a physical quantity that is used to indicate the luminous intensity and / or degree of illumination of the surface of an object. It is known in the field that for semiconductor wafers, excessive wafer surface roughness will affect the detection of small, localized light scattering (resulting in a hazy sheen). Preliminary inspection is intended to select semiconductor wafers without major defects (e.g., visible defects) from among the finished products (i.e., wafers that have undergone polishing, cleaning, drying, or other processing) for further evaluation. Additional haze gloss detection further improves slice quality. In this application, preliminary inspection is performed to select or identify materials without visible surface defects, which are then further screened for haze gloss. In other words, a slice with visible surface defects is immediately considered unqualified, and no additional haze gloss detection is performed. As used in this document, the term "visible defect" refers to defects on the wafer surface that are visible under high-intensity light, such as scratches, chemical residues, orange peel defects, bright spots, particles, twin flakes, edge breaks, cracks, shallow pits, knife marks, striations, corrosion pits, spots, poorly polished areas, and micro-bumps. Therefore, a material (i.e., a semiconductor wafer) with no visible surface defects means that none of the aforementioned defects can be found on its surface. As used in this document, the term "cleaning" refers to the removal of unnecessary residues from the surface of materials (e.g., slices). In some embodiments, preliminary inspection is optional. In some embodiments, no preliminary inspection is carried out. In some embodiments, for certain materials, such as ceramics or glass, the preliminary inspection step may be omitted. In certain embodiments of the method of the present invention, when the material to be inspected is a semiconductor wafer, additional steps, such as cleaning or drying the wafer, are also included before the preliminary inspection. These steps can be carried out using conventional methods and equipment. In some embodiments, the installation used for sail gloss inspection can be a surface detection installation commonly used in the art. Preferably, sail gloss inspection can be performed using edge surface detection systems commonly used in the art, such as, but not limited to, the KLA Surfscan, KLA Candela series, or Unity LightSpeed ​​inspection systems. In some embodiments, the inspection of the sail gloss involves irradiating the slice to be detected with incident light, which may be a laser with a wavelength commonly used in art for slice surface detection. In some embodiments, the incident light is a short-wavelength laser. In some embodiments, the incident light The incident light can be a single-wavelength laser with any wavelength within the red or blue-violet bands of the spectrum. In some embodiments, the incident light is a laser with a wavelength < 660 nm, preferably < 490 nm. It has been found that using a blue-violet laser as the incident light, preferably with a wavelength < 490 nm, improves detectability by surface inspection. More preferably, the incident light is a laser with a wavelength of 405 nm, 473 nm, or 488 nm; particularly preferred, the incident light is a laser with a wavelength of 473 nm. In some embodiments, a laser with a wavelength of 655 nm can also be used as incident light. In some embodiments, the inspection of the sail gloss includes signal detection. Preferably, the detection signal consists of detecting the optical signal of any wavelength, which may not exceed 1100 nm, preferably from 280 to 1100 nm, more preferably from 280 to 980 nm, and particularly preferably from 350 to 850 nm. Preferably, the detection signal should detect the optical signal having a wavelength equal to that of the incident light. As used in this document, the term "photoluminescence" refers to a phenomenon in which materials are excited to produce light emissions by absorbing energy when exposed to an external light source. Taking semiconductor materials as an example, photoluminescence is a process in which electrons are excited by light to transition from the valence band to the conduction band, and then back to the valence band by lattice relaxation, while simultaneously emitting photons. As used in this document, the term "photoluminescence signal" refers to an optical signal generated by the photoluminescence of a material. In cases where the material to be detected exhibits an energy band structure, the photoluminescent wavelength of the material can be determined using formula (I) above, in order to select a suitable optical filter module. For crystalline materials such as ceramics and semiconductors, Eg is the band gap of the material itself; and for amorphous materials, such as glass, particularly glass containing luminescent materials, Eg is the band gap of the luminescent materials. As used in this document, the term "bandwidth gap" refers to the energy difference between the lowest energy level of the band conduction of a material and the highest energy level of the valence band. The inventors observed that during surface condition inspection, the photoluminescence of the tested material affects the accurate detection of haze gloss. This is particularly true when the haze gloss signal of the tested material is weak. Therefore, to accurately detect haze gloss, it is necessary to eliminate and reduce the interference of the material's photoluminescence signal by filtering it. As used in this document, the term "filter" refers to substantially removing unwanted optical signals (such as optical signals generated by the photoluminescence of the material under test), thereby eliminating or substantially reducing its interference or influence on haze gloss detection. In order to effectively suppress the signal not exhibiting veil gloss (according to the present invention, this is generally the photoluminescent signal of the material), in certain embodiments, the photoluminescent signal of the slice is filtered during the veil gloss inspection. In some embodiments, during the inspection of the sail gloss, filtering allows the detection of only light with a wavelength shorter than the photoluminescence wavelength, preferably not exceeding the photoluminescence wavelength minus 20 nm, in the signal inspection step. Preferably, only light with a wavelength equivalent to that of the incident light is detected in the signal inspection step. Alternatively, in some embodiments, in the inspection of the sail gloss, the filtering enables the detection of only light having a wavelength in the range of incident light wavelength plus or minus (+) 20 nm, preferably in the range of incident light wavelength plus or minus 10 nm, and more preferably equal to the wavelength of the incident light, in the signal detection step. In some embodiments, in the inspection of the haze, the filtering involves the selection of an optical filter module. In some embodiments, for example in the case of the inspection of the haze of semiconductor wafers, the selection of the optical filter module is carried out as follows: a) calculate the photoluminescent wavelength λn of the semiconductor using formula (I) above; and b) select an optical filter module that transmits light with a wavelength shorter than λem-. Preferably, the optical filter module includes filters and / or filter coatings. In some embodiments, the filtering involves the selection of a a low-pass filter or filter coating whose cutoff wavelength is not less than the incident light wavelength (λ) and less than the photoluminescence wavelength (λn). Preferably, the cutoff wavelength is not less than (λn + 20) nm and not more than (λn - 20) nm. In some embodiments, the filtering involves selecting a band-pass filter or filter coating that transmits light with a wavelength of (λn + 20) nm, preferably a wavelength of (λn + 10) nm, and more preferably, a wavelength equal to that of the incident light. In some embodiments of the present invention, the material under test is any material having smooth surfaces. Preferably, the material is selected from semiconductor materials, glass, or ceramics; more preferably, the material is a semiconductor wafer. In some embodiments, the glass is luminescent glass, and preferably glass doped with luminescent materials. Preferably, the semiconductor wafer has a band gap of 1.12 to 1.53 eV, and preferably 1.35 to 1.43 eV. In some embodiments, the material of the semiconductor wafer is selected from elemental semiconductor materials or compound semiconductor materials, and preferably compound semiconductor materials.In some embodiments, the semiconductor wafer material is selected from direct bandgap semiconductor materials, and preferably direct bandgap semiconductor materials with a bandgap of 1.12 to 1.53 eV, or more preferably 1.35 to 1.43 eV. Preferably, the semiconductor wafer material is InP or GaÂs. In certain embodiments of the method of the present invention, it is particularly preferred that the incident light source have a wavelength of 473 nm, the optical filter module be a bandpass filter or filter coating having cutoff bands < 460 nm and > 485 nm, and, consequently, a transmission band from 460 to 485 nm, the transmittance at the wavelength of 473 nm being 100%. These conditions can be used to detect the haze gloss of wafers of group III-V compound semiconductors, such as gallium arsenide (GaAs) or indium phosphide (InP) wafers. In some embodiments, said sail gloss inspection includes a material loading step and a data analysis step. Another aspect of the present invention, as shown in [Fig. 3], provides an installation for detecting a sheen of material veil, which includes: a material loading unit, comprising a sample holder (for example an electrostatic mandrel 2) to contain the material 3; a laser scanning unit, comprising a laser source 1 for emitting incident light 6; a signal detection unit, comprising a detector 5; and a data analysis unit 8, comprising test software to analyze the signal detected by the signal inspection unit; in which, the material haze gloss detection installation further includes an optical filter module 4 for filtering the photoluminescence signal of the material 3; the optical filter module 4 is arranged before the detector 5 in the direction of propagation of the light signal 7 to be detected. As used in this document, the term "sample holder" refers to a device that contains and immobilizes the sample to be detected during the detection process. In some embodiments, the sample holders are those commonly used for surface detection in the art. Preferably, the sample holder is an electrostatic mandrel. In the case where the material to be detected is a slice, the sample holder is a slice mandrel. In some embodiments, the material loading unit further includes a material clamping means (comprising, but not limited to, a manipulator, and a clamping means by back or edge contact) for automatically loading the material to be detected onto the sample holder. In some embodiments, optionally, the material gloss detection system of the present invention includes a preliminary inspection unit. In some embodiments, the preliminary inspection unit is a system commonly used for the preliminary inspection of materials (e.g., semiconductor wafers) in the field. In some embodiments, the preliminary inspection unit is a system useful for light-assisted inspection. In some embodiments, the preliminary inspection system is a light source, preferably a high-intensity light source. Preferably, the high-intensity light source may be, but is not limited to, a high-luminance halogen light.In some embodiments, the preliminary inspection unit comprises a light source having a luminance not less than 300,000 Ix, preferably not less than 400,000 Ix. In some embodiments, in the laser scanning unit, the laser source for emitting the incident light may emit a laser with a definite wavelength. In some embodiments, the laser source preferably emits a laser with a wavelength in the red or blue-violet bands of the spectrum, preferably with a wavelength in the blue-violet band of the spectrum. In some embodiments, the laser source emits a laser with a wavelength < 660 nm, preferably < 490 nm. It has been found that by using a laser source With a wavelength in the blue-violet band of the spectrum, particularly with a wavelength < 490 nm, it was possible to improve detectability by surface inspection. Preferably, the laser source can emit a laser with a wavelength of 405 nm, 473 nm, or 488 nm. In some embodiments, the laser source is capable of emitting a laser with a wavelength of 655 nm. In some embodiments, the laser source is preferably capable of emitting a laser with a wavelength of 473 nm. In some embodiments, the signal detection unit is a device commonly used in the art, comprising, but not limited to, receivers and detectors. Preferably, the signal detection unit is a detector; more preferably, the signal detection unit is an integrated detector. In some embodiments, the detectors may be those conventionally used in the art for wafer surface detection. The detector is used to collect and detect the resulting scattering light signal by illuminating the surface of the semiconductor to be detected with incident light. More preferably, the detector responds to a light signal with a wavelength of 1100 nm or less, preferably from 280 to 1100 nm, more preferably from 280 to 980 nm, and even more preferably from 350 to 850 nm.Preferably, the detector is a visible light detector, and even more preferably a Si detector. In embodiments of the present invention, the data analysis unit includes test software for analyzing the signal detected by the signal detection unit, and the test software is commercially available software known in the art. In some embodiments, the test software is integrated into commercially available surface detection devices. The inventors found that in order to accurately inspect the veil gloss, the photoluminescence signal from the materials to be detected (such as a semiconductor substrate) must be suppressed to such an extent that it cannot be detected by the detector, or is too weak to affect the detection of the veil gloss signal by the detector, so that the optical signal generated by the veil gloss can be accurately captured by the detector to give the accurate results of the distribution and value of the veil gloss.The optical filter module of the present invention can be used to effectively filter / eliminate / reduce unwanted interfering signals (i.e., signals not exhibiting haze gloss, for example, preferably, photoluminescence signals), and thus the haze gloss signal can be accurately collected and detected by the detector, while minimizing or eliminating the effects of the photoluminescence signal from the semiconductor material on the inspection (particularly in the case of a . low haze gloss). Conversely, it can easily be understood that without the optical filter module of the present invention (for example, in the case where prior art surface inspection equipment is used), the haze gloss signals are subject to interference from the photoluminescence signal or are even masked by it, so that the actual values ​​and / or distribution of the haze gloss of the material (for example, semiconductor wafers) are not accurately acquired (or even cannot be). According to the present invention, the optical filter module is used to transmit light whose wavelength is in the desired range, while "intercepting" light whose wavelength is undesirable. In some embodiments, the optical filter module includes one or more optical elements that selectively transmit light with a certain wavelength. In some embodiments, the optical filter module comprises an optical element that selectively transmits light with a wavelength shorter than the photoluminescence wavelength (Aen). Preferably, the optical filter module comprises an optical element that selectively transmits light with a wavelength not exceeding (Aen − 20) nm. In some embodiments, the optical filter module comprises an optical element selectively transmitting light with a wavelength range of (e.g., +20) nm. Preferably, the optical filter module comprises an optical element selectively transmitting light with a wavelength range of (e.g., +10) nm. More preferably, the optical filter module comprises an optical element selectively transmitting light with a wavelength equal to, According to the present invention, the optical filter module is preferably selected from filters, filter coatings, or a combination thereof, preferably low-pass filters, band-pass filters, low-pass filter coatings, band-pass filter coatings, or a combination thereof. In some embodiments, the optical filter module preferably comprises low-pass filters, low-pass filter coatings, or a combination thereof. In some embodiments, the optical filter module preferably comprises band-pass filters, band-pass filter coatings, or a combination thereof. As used in this document, the terms "filter" and "filter coating" both refer to the optical filter module used to selectively transmit light with specific wavelengths of irradiation wavelength range. As used in this document, the term "low-pass filter / coating" refers to an optical filter module that can transmit light with a wavelength below a certain value, and block light with a wavelength equal to or greater than said value. As used in this document, the term "bandpass filter / film" refers to an optical filter module that can transmit light with a wavelength within a certain range, while intercepting light with wavelengths beyond said range. In some embodiments, the filters or filter coatings may be of any type known in the art. Preferably, the optical filter is configured before the detector in the direction of propagation of the optical signal to be detected, in a manner conventionally known in the art. In some embodiments, the filter is configured between the material loading unit and the signal detection unit. Preferably, the filter coating is arranged on the detector by a method conventionally known in the art. Preferably, the filter coating is bonded to the detector surface. In some embodiments, the cutoff wavelength of the selected low-pass filter or filter coating is not less than the excitation light wavelength (λ), and is less than the photoluminescence wavelength (μm). Preferably, the cutoff wavelength of the selected low-pass filter or filter coating is not less than (λ, +20) nm and does not exceed (μ₀ -20) nm. In some embodiments, the transmission wavelength of the selected bandpass filter or filter film is (Å + 20) nm; preferably, the transmission wavelength is (Å, + 10) nm. In some embodiments, the optical filter module of the present invention may comprise a filter or a filter coating. In other embodiments, the optical filter module may comprise two or more filters of the same or different types. In other embodiments, the optical filter module may comprise two or more filter coatings of the same or different types. In other embodiments, the optical filter module of the present invention may comprise a combination of at least one filter and at least one filter coating, wherein the filter and the filter coating may be of the same or different types and may have different transmission wavelengths. By using optical filter modules comprising one or more filters and / or filter coatings, of the same or different types, with various transmission wavelengths, it is possible to filter out interfering optical signals. with undesirable wavelengths (including but not limited to the photoluminescence signal), which allows for more accurate sail gloss detection results. The optical filters / coatings selected for different semiconductor materials can be (but are not limited to) those shown in Table 1. Table 1: Transmission wavelength ranges of bandpass filters / films and cutoff wavelength ranges of lowpass filters / coatings that can be selected for different semiconductor materials. - 473 - 473 Length | Material [Length | Wavelength Ranges | Wavelength Ranges | Semi-conductor [ Wavelength | Wavelength | Wavelength | Light source for | Photoluminescent | Wavelength | Transmission | Cutoff of incident | Substrate | Nescence | Filtered by | Filters / Filters / Coatings (nm) to detect | (nm) the modulus [ Coatings low-pass filter band-pass filter (nm) optical (nm) (nm) | - 473 if 1107 > 1107 473 + 10 473 < < 1107 | | - 473 {np 918 > 918 473 + 10 473 < < 918 | - 473 GaÂs 867 > 867 473 + 10 473 << 867 473 < A< 1107 473 < A< 918 473 << 867 Material | Length | Wavelength ranges | Semiconductor ranges | Wavelength ranges | Transmitted wavelength | Transmitted wavelength | Substrate | Intensity | Filtered by filters / to detect | (nm) | Filter coatings — | Optical bandpass (nm) (nm) if 1107 > 1107 473 + 10 | [nP 918 2918 — |473+10 GaÂs 867 > 867 473 + 10 In some embodiments, the optical filter module has a transmittance > 50%, preferably a transmittance > 95%, and more preferably a transmittance > 99%. In some embodiments, the optical filter module of the present invention can automatically select appropriate filters based on the material of the semiconductor wafer to be detected (such as a semiconductor substrate), in order to automatically and selectively acquire the haze distribution and value of wafers made of different semiconductor materials. In some embodiments, the optical filter module of the present invention may include a filter selection unit: after receiving information on the type of semiconductor material of the wafer to be tested, the computer will automatically select the appropriate optical filter module (for example, a filter or a filter coating), and then automatically change the appropriate optical components to prepare for detection. In certain embodiments, the material gloss inspection setup according to the present invention is useful for inspecting a wafer of a semiconductor material with a band gap of 1.12 to 1.53 eV, in a more Preferred range of 1.35 to 1.42 eV. In some embodiments, the inspection setup of the present invention is used to detect the haze gloss of wafers made of elemental semiconductor materials or compound semiconductor materials, preferably wafers made of compound semiconductor materials. In some embodiments, the inspection setup of the present invention is used to inspect the haze gloss of wafers made of direct bandgap semiconductor materials, preferably wafers made of direct bandgap semiconductor materials with a bandgap of 1.12 to 1.53 eV, more preferably 1.35 to 1.42 eV. In some embodiments, the inspection setup of the present invention is used to inspect InP or GaÂs wafers. Examples Example 1 A 3-inch N-type InP (sulfur-doped) wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 x 10⁻¹. During the inspection, the slice was carefully observed under the high-intensity light source while being slowly rotated clockwise and then counterclockwise to determine if there were any visible defects (such as scratches, chemical residues, and orange peel-like defects) on the slice surface. The slice without any visible defects, i.e., the one that passed the preliminary inspection, will be inspected for haze gloss. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: den = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 550 nm, with a transmission band transmittance of 95%, was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured upstream of the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The slice was then scanned by the laser scanning unit; the scattered light signal that passed through the optical filter module was inspected by the Si detector; and the detected signal data was analyzed by the data analysis unit (which includes the embedded test software). The results of the glare inspection are shown in [Fig. 4]. In cases where the optical filter module was not used, the same slice that passed the preliminary inspection was subjected to the haze gloss inspection under the same conditions. The results are shown in [Fig. 5]. Figure 5 shows the haze gloss of an N-type InP wafer detected without using the optical filter module. As shown in Figure 5, the haze gloss distribution across the wafer surface was observed to be indistinct; high haze gloss intensities were observed in areas a, b, c, and d, with intensity values ​​of 2.223 ppm, 2.134 ppm, 1.324 ppm, and 1.153 ppm, respectively; therefore, the median haze gloss value for the entire wafer was 1.877 ppm. In general, when the median haze gloss intensity of the InP wafer does not exceed 0.15 ppm, the wafer gloss is considered acceptable. Therefore, based on the above results, the wafer is considered unacceptable. Figure 4 is a diagram showing the haze gloss of the same N-type InP wafer detected using the optical filter module of the present invention. As shown in Figure 4, high haze gloss intensities were observed in areas a, b, c, and d of the wafer; however, the intensity values ​​were 0.253 ppm, 0.142 ppm, 0.041 ppm, and 0.023 ppm, respectively. Furthermore, the haze gloss distribution across the wafer surface was very clear, particularly in area d, where the haze gloss demarcation line could be clearly observed. The median haze gloss value for the entire wafer was 0.036 ppm. Thus, the wafer exhibited acceptable haze gloss. By comparing [Fig. 4] with [Fig. 5], we can see that the veil gloss value, as detected in each of the slice areas marked a, b, c, and d as shown in [Fig. 5], was in fact a false result due to the photoluminescence of the slice material; and due to the interference caused by the With photoluminescence of the wafer, an unclear distribution of the haze gloss can be observed. In contrast, after using the optical filter module of the present invention, as shown in [Fig. 4], the photoluminescence signal of the wafer was effectively suppressed, thus enabling the acquisition of a more accurate haze gloss partition map ([Fig. 4]) and more precise haze gloss values, facilitating a more reliable assessment of wafer quality. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or alternatively a filter coating, or a combination thereof) with a center wavelength of 473 nm. Example 2 A 3-inch N-type InP (sulfur-doped) wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same as those described in Example 1. The slice that passed the preliminary inspection was used in a haze gloss inspection. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: dan = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 550 nm and a transmission band transmittance of 90% was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured before the signal inspection unit (i.e., a Si detector) in the propagation direction. of the light signal to be detected. Next, the slice was scanned by the laser scanning unit; the scattered light signal that had passed through the optical filter module was inspected by the Si detector; and the data of the detected signal was analyzed by the data analysis unit (containing the built-in test software). The results obtained after the inspection of the veil gloss are shown in [Fig. 6]. In cases where the optical filter module was not used, the same slice that passed the preliminary inspection was subjected to the haze gloss inspection under the same conditions. The results are shown in [Fig. 7]. Figure 7 shows the haze gloss of an N-type InP wafer detected without using the optical filter module. As shown in Figure 7, a high haze gloss value of 3.562 ppm was observed in the central area of ​​the wafer. Generally, when the median haze intensity value on the InP wafer surface does not exceed 0.15 ppm, the wafer's haze gloss is considered acceptable. Therefore, based on the above inspection result, the wafer was deemed to have an unacceptable haze gloss characteristic. Figure 6 shows the haze gloss of the N-type InP wafer detected using the optical filter module of the present invention. As shown in Figure 6, the wafer had a uniform surface, a high-intensity haze-free zone was observed, and the haze gloss value was 0.024 ppm. Thus, the wafer exhibited an acceptable haze gloss characteristic. Comparing Fig. 6 with Fig. 7, it can be seen that the distribution of haze gloss with a "high" intensity in the central area of ​​the wafer, as shown in Fig. 7, was in fact a false result due to the photoluminescence of the wafer material. In contrast, after using the optical filter module of the present invention, the photoluminescence signal from the wafer was effectively suppressed, thus enabling the acquisition of a more accurate haze gloss distribution map (Fig. 6) and more precise haze gloss values. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or alternatively a filter coating, or a combination thereof) with a center wavelength of 473 nm. Example 3 A 3-inch N-type (undoped) InP wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same. than those described in Example |. The slice that passed the preliminary inspection was used in a sail gloss inspection. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: An = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 550 nm and a transmission band transmittance of 90% was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured upstream of the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The wafer was then scanned by the laser scanning unit; the scattered light signal that passed through the optical filter module was inspected by the Si detector; and the detected signal data was analyzed by the data analysis unit (which includes the embedded test software). The results obtained after the haze inspection are shown in [Fig. 8]. In the case where the optical filter module was not used, the same wafer that passed the preliminary inspection was subjected to the haze inspection under the same conditions. The results are shown in [Fig. 9]. [Fig. 9] shows the haze of an N-type InP wafer detected without using the optical filter module.As shown in [Fig. 9], a high haze gloss value of 4.026 ppm was observed in the central area of ​​the wafer. In general, when the median haze intensity value on the InP wafer surface does not exceed 0.15 ppm, the wafer's haze gloss is considered acceptable. Therefore, based on the above inspection result, the wafer was considered to have an unacceptable haze gloss characteristic. [Fig. 8] shows the haze gloss of the type N InP wafer detected using the optical filter module of the present invention. As shown in [Fig. 8]. [Fig. 8], the slice had a uniform surface, a very intense no-haze zone was observed; and the haze gloss value was 0.028 ppm. Thus, the slice actually exhibited an acceptable haze gloss characteristic. By comparing [Fig.8] with [Fig.9], it can be seen that the distribution of the veil gloss with a "high" intensity in the central area of ​​the slice, as shown in [Fig.9], was in fact a false result caused by the photoluminescence of the slice material. In contrast, after the use of the optical filter module of the present invention, the photoluminescence signal of the slice was effectively suppressed, thus allowing the acquisition of a more accurate veil gloss distribution map ([Fig.8]) and more accurate veil gloss values. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or alternatively a filter coating, or a combination thereof) with a center wavelength of 473 nm. Example 4 A 4-inch N-type silicon-doped GaÂs wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same as those described in Example 1. The slice that passed the preliminary inspection was used in a haze gloss inspection. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of GaÂs material, which has a band gap of 1.42 eV, and therefore the photoluminescence wavelength of the material was calculated as: den = 1240 / 1.42 = 873 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 873 nm—a low-pass filter with a cutoff wavelength less than 873 nm—can be selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 550 nm, with a transmission band transmittance of 90% has been used. c. Signal inspection and analysis A suitable optical filter module was selected and configured upstream of the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The slice was then scanned by the laser scanning unit; the scattered light signal that passed through the optical filter module was inspected by the Si detector; and the detected signal data was analyzed by the data analysis unit (which includes the embedded test software). The results obtained after inspecting the veil gloss are shown in [Fig. 10]. In cases where the optical filter module was not used, the same slice that passed the preliminary inspection was subjected to the haze gloss inspection under the same conditions. The results are shown in [Fig. 11]. Figure 11 shows the haze gloss of an N-type GaÂs wafer detected without using the optical filter module. As shown in Figure 11, numerous areas with very intense haze gloss were scattered in a butterfly pattern across the wafer; and the intensity value was 0.852 ppm. As is generally recognized in the art, when a GaÂs wafer has a haze gloss value less than 0.250 ppm, it is considered to have passed the haze gloss inspection. Therefore, based on the above inspection result, the wafer was considered to have an unacceptable haze gloss characteristic. Figure 10 shows the haze gloss of the N-type GaÂs wafer detected using the optical filter module of the present invention. As shown in Figure 10, the wafer had a uniform surface, a high-intensity haze-free zone was observed, and the haze gloss value was 0.176 ppm. Thus, the wafer exhibited an acceptable haze gloss characteristic. Comparing Fig. 10 with Fig. 11, it can be seen that the numerous areas exhibiting high haze intensity scattered across the slice, as shown in Fig. 11, were spurious results caused by the photoluminescence signal from the slice material. In contrast, after using the optical filter module of the present invention, the photoluminescence signal from the slice was effectively suppressed—as seen in the comparison between Fig. 10 and Fig. 11, the butterfly-shaped, scattered areas with high haze are not observed after using the optical filter module, thus enabling the acquisition of a more accurate haze partition map and more precise haze values. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or otherwise a filter coating). or a combination thereof) with a central wavelength of 473 nm. Example 5 A 3-inch N-type InP (sulfur-doped) wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same as those described in Example 1. The slice that passed the preliminary inspection was used in a haze gloss inspection. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: Δem = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 490 to 540 nm and a transmission band transmittance of 90% was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured upstream of the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The slice was then scanned by the laser scanning unit; the scattered light signal that passed through the optical filter module was inspected by the Si detector; and the detected signal data was analyzed by the data analysis unit (which includes the embedded test software). The results obtained after the gloss inspection are shown in [Fig. 12]. In cases where the optical filter module was not used, the same slice that passed the preliminary inspection was subjected to gloss inspection under the same conditions. The results are shown in [Fig. 13]. Figure 13 shows the haze gloss of an N-type InP wafer detected without using the optical filter module. As shown in Figure 13, a high haze gloss value of 1.791 ppm was observed in the central area of ​​the wafer. As is generally accepted in the art, when an InP-based wafer has a haze gloss intensity value below 0.150 ppm, it is considered to have passed the haze gloss inspection. Therefore, based on the above inspection result, the wafer was considered to have an unacceptable haze gloss characteristic. Figure 12 shows the haze gloss of the N-type InP wafer detected using the optical filter module of the present invention. As shown in Figure 6, the wafer had a uniform surface, a very intense haze-free zone was observed, and the haze gloss value was 0.041 ppm. Thus, the wafer actually exhibited an acceptable haze gloss characteristic. Comparing Fig. 12 with Fig. 13, it can be seen that the distribution of haze gloss with a "high" intensity in the central area of ​​the wafer, as shown in Fig. 13, was in fact a false result due to the photoluminescence of the wafer material. In contrast, after using the optical filter module of the present invention, the photoluminescence signal from the wafer was effectively suppressed, thus enabling the acquisition of a more accurate haze gloss distribution map (Fig. 12) and more precise haze gloss values. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or alternatively a filter coating, or a combination thereof) with a center wavelength of 473 nm. Example 6 A 3-inch N-type InP (sulfur-doped) wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same as those described in Example 1. The slice that passed the preliminary inspection was used in a haze gloss inspection. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the system inspection. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: An = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 830 to 1200 nm, with a transmission bandwidth of 96%, was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured upstream of the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The wafer was then scanned by the laser scanning unit; the scattered light signal that passed through the optical filter module was inspected by the Si detector; and the detected signal data was analyzed by the data analysis unit (which includes the embedded test software). The results obtained after the haze inspection are shown in [Fig. 14]. In the case where the optical filter module was not used, the same wafer that passed the preliminary inspection was subjected to the haze inspection under the same conditions. The results are shown in [Fig. 15]. [Fig. 15] shows the haze of a type N InP wafer detected without using the optical filter module.As shown in [Fig. 15], a high haze gloss value of 1.919 ppm was observed in the central area of ​​the wafer. As is generally recognized in the art, when an InP-based wafer has a haze gloss intensity value below 0.150 ppm, it is considered to have passed the haze gloss inspection. Therefore, based on the above inspection result, the wafer was considered to have an unacceptable haze gloss characteristic. Figure 14 shows the haze gloss of the N-type InP wafer detected using the optical filter module of the present invention. As shown in Figure 14, the wafer had a uniform surface, a very intense no-haze zone was observed, and the haze gloss value was 0.019 ppm. Thus, the wafer actually exhibited an acceptable haze gloss characteristic. Comparing Figure 14 with Figure 15, it can be seen that the distribution of haze gloss with a "high" intensity in the central zone of the wafer, as shown in Figure 15, was in fact a false result due to the photoluminescence of the material. of the slice. On the other hand, after the use of the optical filter module of the present invention, the photoluminescence signal of the slice was effectively suppressed, thus enabling the acquisition of a more accurate veil gloss distribution map ([Fig.14]) and more accurate veil gloss values. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or alternatively a filter coating, or a combination thereof) with a center wavelength of 473 nm. Example 7 A 3-inch N-type InP (sulfur-doped) wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same as those described in Example 1. The slice that passed the preliminary inspection was used in a haze gloss inspection. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: An = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. Specifically, in this example, a low-pass filter with a cutoff wavelength of 860 to 1300 nm and a transmission band transmittance of 90% was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured before the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The slice was then scanned by the laser scanning unit; the scattered light signal having successfully passed through the optical filter module... was inspected by the Si detector; and the detected signal data were analyzed by the data analysis unit (containing the built-in test software). The results obtained after the inspection of the sail gloss are shown in [Fig. 16]. In cases where the optical filter module was not used, the same slice that passed the preliminary inspection was subjected to the haze gloss inspection under the same conditions. The results are shown in [Fig. 17]. Figure 17 shows the haze gloss of an N-type InP wafer detected without using the optical filter module. As shown in Figure 17, a high haze gloss value of 1.719 ppm was observed in the central area of ​​the wafer. As is generally accepted in the field, when an InP-based wafer has a haze gloss intensity value below 0.150 ppm, it is considered to have passed the haze gloss inspection. Therefore, based on the above inspection result, the wafer was considered to have an unacceptable haze gloss characteristic. Figure 16 shows the haze gloss of the N-type InP wafer detected using the optical filter module of the present invention. As shown in Figure 16, the wafer had a uniform surface, a very intense haze-free zone was observed, and the haze gloss value was 0.027 ppm. Thus, the wafer actually exhibited an acceptable haze gloss characteristic. Comparing Fig. 16 with Fig. 17, it can be seen that the distribution of haze gloss with a "high" intensity in the central area of ​​the wafer, as shown in Fig. 17, was in fact a false result due to the photoluminescence of the wafer material. In contrast, after using the optical filter module of the present invention, the photoluminescence signal from the wafer was effectively suppressed, thus enabling the acquisition of a more accurate haze gloss distribution map (Fig. 16) and more precise haze gloss values. Similar results could be obtained when the optical filter module used here is optionally a bandpass filter (or alternatively a filter coating, or a combination thereof) with a center wavelength of 473 nm. Example 8 A 3-inch N-type InP (sulfur-doped) wafer was subjected to a haze gloss inspection. After being cleaned and dried, the wafer was further processed according to the following steps: 1. Preliminary Inspection The cleaned slice was inspected using a high-intensity light source (purchased from Yamada Optics, Japan). The luminance was no less than 400,000 Ix. The process and criteria for the light inspection were the same as those described in Example 1. The slice passed the inspection preliminary was used in an inspection of the sail's gloss. 2. Inspection of the sail's sheen The LightSpeed ​​4See series inspection system from UnitySC (France) was used. a. The slice that passed the preliminary inspection was placed on the slice holder (i.e., an electrostatic slice mandrel) of the inspection system. A blue laser with a wavelength of 473 nm was used as the incident light. b. An optical filter module was selected as follows: the slice to be inspected was made of InP material, which has a band gap of 1.35 eV, and therefore the photoluminescence wavelength of the material was calculated as: An = 1240 / 1.35 = 918 nm. Consequently, an optical filter module capable of filtering a light signal with a wavelength of 918 nm—a low-pass filter with a cutoff wavelength less than 918 nm—can be selected. Specifically, in this example, a band-pass filter with a cutoff wavelength < 460 nm and > 485 nm, with a transmittance band from 460 to 485 nm (the transmittance at the wavelength of 473 nm being 100%), was used. c. Signal inspection and analysis A suitable optical filter module was selected and configured upstream of the signal inspection unit (i.e., a Si detector) in the direction of propagation of the light signal to be detected. The wafer was then scanned by the laser scanning unit; the scattered light signal that passed through the optical filter module was inspected by the Si detector; and the detected signal data was analyzed by the data analysis unit (which includes the embedded test software). The results obtained after the haze inspection are shown in [Fig. 18]. In the case where the optical filter module was not used, the same wafer that passed the preliminary inspection was subjected to the haze inspection under the same conditions. The results are shown in [Fig. 19]. [Fig. 19] shows the haze of a type N InP wafer detected without using the optical filter module.As shown in [Fig. 19], a high haze gloss value of 2.227 ppm was observed in the central area of ​​the wafer. As is generally recognized in the art, when an InP-based wafer has a haze gloss intensity value below 0.150 ppm, it is considered to have passed the haze gloss inspection. Therefore, based on the above inspection result, the wafer was considered to have an unacceptable haze gloss characteristic. Figure 18 shows the sheen of the InP N-type slice detected in using the optical filter module of the present invention. As shown in [Fig. 18], the slice had a uniform surface, a very intense no-haze zone was observed, and the haze gloss value was 0.002 ppm. Thus, the slice actually exhibited an acceptable haze gloss characteristic. Comparing Fig. 18 with Fig. 19, it can be seen that the distribution of haze gloss with a "high" intensity in the central area of ​​the wafer, as shown in Fig. 19, was in fact a false result due to the photoluminescence of the wafer material. In contrast, after using the optical filter module of the present invention, the photoluminescence signal from the wafer was effectively suppressed, thus enabling the acquisition of a more accurate haze gloss distribution map (Fig. 18) and more precise haze gloss values. Similar results could be obtained when the optical filter module used here optionally is a low-pass filter (or alternatively a filter coating, or a combination thereof) with a cutoff wavelength < 918 nm.

Claims

Demands

1. A method for detecting the gloss of material haze, comprising the Next steps: - optionally, a preliminary inspection, which is carried out on the materials (3), in order to identify materials (3) not exhibiting visible surface defects; and - an inspection of the sail gloss, to detect the sail gloss of the materials: in which an optical filter module (4) is configured in an ins- sail gloss inspection installation to filter a photo- signal luminescence of materials (3) in the path of light towards the detector (5), so as to prevent the photoluminescence signal from be detected by a detector (5).

2. Method according to claim |, characterized in that the inspection of glossy veil includes irradiation of materials (3) with a incident light (6), which can be a laser of any wavelength, preferably a single-wavelength laser with a wavelength < 660 nm, in a more preferred < 490 nm.

3. A method according to either of claims 1 and 2, characterized in what filtering allows us to detect, in the detection signal, the light having a wavelength shorter than the wavelength of photoluminescence, preferably a light having a wavelength wavelength not exceeding the photoluminescence wavelength minus 20 nm.

4. A method according to any one of claims 1 to 3, characterized in what filtering allows us to detect, in the detection signal, the light having a wavelength within a wavelength range of incident light + 20 nm, preferably a wavelength in a range of incident light wavelengths + 10 nm, and of a wavelength that is equal to the preferred method wavelength of incident light (6).

5. A method according to any one of claims 1 to 4, characterized in that the material is any material with a smooth surface; Preferably, the material is a semiconductor material, glass, or ceramics; more preferably the material is a slice of semiconductor; even more preferably, the slice of semiconductor has a band gap of 1.12 to 1.53 eV, of preference of 1.35 to 1.43 eV.

6. A method according to claim 5, characterized in that the slice of The semiconductor is chosen from semiconductor wafers. composed, preferably, of a strip semiconductor wafer directly prohibited, in a more preferred manner, slices of InP or slices of GaÂs.

7. Material haze gloss detection installation, comprising: a material loading unit, including a sample holder to contain the material; a laser scanning unit, comprising a laser source (1) for emit incident light (6); preferably, the incident light (6) can be a laser of any wavelength, preferably a single-wavelength laser with a wavelength < 660 nm, more preferably < 490 nm; a signal inspection unit, comprising a detector (5); of preferably a detector (5) which responds to a light signal (7) with a wavelength of 280 to 1100 nm; preferably a detector (5) which is a visible light detector, in a more preferred way an Si detector or an integrated detector; and a data analysis unit (8), comprising software, for analyze the signal detected by the signal inspection unit; in which the material haze gloss detection installation further includes an optical filter module (4) for filtering the signal of photoluminescence of the material; the optical filter module (4) is configured before the detector (5) in the direction of propagation of the light signal (7) to be detected.

8. Installation according to claim 7, characterized in that the module of optical filter (4) includes an optical element capable of transmitting selectively light having a wavelength shorter than the photoluminescence wavelength, preferably not exceeding the wavelength of photoluminescence minus 20 nm.

9. Installation according to claim 7, characterized in that the module of optical filter (4) includes an optical element capable of transmitting selectively light having a wavelength in the range of incident light wavelength + 20 nm, preferably a wavelength in the wavelength range of light incident + 10 nm, preferably a wavelength which is equal to the wavelength of incident light (6).

10. Installation according to any one of claims 7 to 9, characterized in that the optical filter module (4) is chosen from a group consisting of a filter, a filter coating and a combination of these, preferably in a group consisting of a low-pass filter, of a bandpass filter, a lowpass filter coating, a re- bandpass filter clothing and a combination thereof; of Preferably, the optical filter module (4) includes a filter bandpass, a bandpass filter coating, or a combination of these; preferably, the optical filter module (4) can be a individual module, or a filter coating on the detector surface (5) optics, or combinations thereof.

11. Installation according to any one of claims 7 to 10, ca- characterized in that the optical filter module (4) has a trans- light signal mittance > 50%, preferably > 95%, and of preferred method > 99%.

12. Installation according to any one of claims 7 to 11, ca- characterized in that the haze gloss detection installation of materials is used to detect any material with a surface smooth; preferably, the material is a semiconductor material, of glass or ceramic; preferably, the material is a semiconductor wafer; more preferably, the A semiconductor wafer is a wafer made of a material semiconductor with a band gap of 1.12 to 1.53 eV, of preferably from 1.35 to 1.43 eV; preferably slices of monatomic semiconductors or compound semiconductors; preferably a slice of a strip semiconductor material directly prohibited, and more preferably a slice of InP or of GaÂs.