Method for manufacturing an electronic device comprising a bonding phase
Patent Information
- Application Number
- FR2021005711
- Authority / Receiving Office
- FR · FR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-05-31
- Publication Date
- 2025-02-14
- Estimated Expiration
- 2041-05-31
Smart Images
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Abstract
Description
Title of the invention: Method for manufacturing an electronic device comprising a bonding phase Technical field of the invention
[0001] The present invention relates to a method of manufacturing an electronic device comprising a phase of bonding said electronic device. State of the art
[0002] In the field of luminous display screens, the luminous elements constituting the screen must be arranged in a matrix manner in an increasingly precise manner as the resolution of the screens increases. These luminous elements each comprise at least one light-emitting diode and are organized in the form of a multi-colored pixel or in the form of a monochrome sub-pixel.
[0003] It is known to produce light-emitting diodes on an initial support in the form of a silicon or sapphire substrate and to transfer them, by compression or even thermocompression, to a receiving support different from the initial support and intended to constitute, after this transfer by pressure or thermocompression, the luminous display screen.
[0004] Prior to their transfer, it is generally necessary to separate them to individualize them. To do this, it is possible to separate them using a blade, by a mechanical process. This method is satisfactory in that it allows the diodes to be separated. On the other hand, it can induce mechanical stress and sometimes lead to damage to the diodes. It is also possible to carry out this separation using a laser. This method has the advantage of allowing the chips to be cut without generating mechanical stress. However, laser ablation sometimes generates a deposit of material on the diodes which can harm the final rendering of the luminous display screens.
[0005] Thus, it is generally preferable to use a plasma etching cutting method, particularly for producing very fine cuts, of the order of a few micrometers in width. This method consists of depositing a resin on the surface of the diodes by photolithography. Chemical development makes it possible to remove the resin from the areas intended to be etched by the plasma. This method involves numerous additional process steps and a significant consumption of consumables. As a replacement for the resins, it is possible to use metal masks deposited on the diodes and then proceed with plasma etching. The advantage of a metal mask compared to the use of a resin is that it makes it possible to achieve finer cutting dimensions than this that can be achieved with resin. The main problem with this method comes from the removal of the metal mask, which often causes damage to the surface of the chips. Removing a metal mask typically requires the use of very strong acidic or basic solvents, which generally damage chips, particularly light-emitting diodes.
[0006] Object of the invention
[0007] The aim of the present invention is to propose a solution which addresses all or part of the aforementioned problems:
[0008] This aim can be achieved by implementing a method for manufacturing an electronic device comprising a phase of connecting said electronic device to a manufacturing element, said connecting phase comprising: - a step of providing a primary substrate comprising at least one electronic device; - a step of applying a bonding layer made of a photosensitive polymer, during which the bonding layer is applied to a surface of the electronic device so as to secure the bonding layer and the electronic device, and / or to an interface surface of the manufacturing element so as to secure the bonding layer and the manufacturing element; - a step of bringing the manufacturing element into contact with the electronic device so as to cause the manufacturing element to adhere to the electronic device via the bonding layer.
[0009] The manufacturing method further comprises a release phase in which the bonding layer is exposed to a first light radiation having a first wavelength so as to dissociate the manufacturing element from the electronic device.
[0010] The previously described arrangements make it possible to propose a manufacturing method in which the electronic devices are bonded to the manufacturing element via the bonding layer. Furthermore, and synergistically, the bonding layer also makes it possible to protect the electronic devices against damage caused by contact with the manufacturing element or during removal of the manufacturing element. In addition, the bonding layer advantageously makes it possible to improve the adhesion of the electronic device with the manufacturing element.
[0011] By photosensitive polymer is meant a polymer capable of undergoing a photoinduced chemical reaction for its polymerization or depolymerization. For example, it may be a polymer / photoinitiator pair, such as a positive resin, or a polymer precursor and a given photoinitiator, such as a negative resin. The photosensitive properties of the polymer also make it possible to remove simply the manufacturing element during the release phase without causing damage to the surface of the electronic device.
[0012] Generally, the dissociation of the manufacturing element from the bonding layer is achieved by liquefaction of the photosensitive polymer constituting the bonding layer when it is subjected to the first light radiation.
[0013] The manufacturing method may further have one or more of the following characteristics, taken alone or in combination.
[0014] According to one embodiment, the manufacturing element consists of a manufacturing substrate on which a layer having the interface surface is deposited.
[0015] According to one embodiment, the bonding phase comprises a step of treating the bonding layer so as to increase the adhesion of said bonding layer.
[0016] In this way, the bonding layer allows the electronic device to be bonded to the manufacturing element, and the release phase allows said manufacturing element to be detached from the electronic device.
[0017] In other words, the bonding and release phases allow reversible bonding and debonding of the electronic device and the manufacturing element.
[0018] According to one embodiment, the treatment step comprises exposing the bonding layer to a second light radiation having a second wavelength, different from the first wavelength.
[0019] According to one embodiment, the second light radiation may be configured to increase the surface adhesion of the bonding layer.
[0020] In other words, the photosensitive polymer may be chosen so as to exhibit an increase in its adhesive power when subjected to light radiation having the second wavelength. For example, the photosensitive polymer may be a positive resin such as resins of the polysiloxane family, polyformaldehydes, polyhydroxystyrenes, novolaks, polymers of the polythiophene and polyphenylene family, poly(vinyl butyral), polyimide or the like. Generally, the photosensitive polymer may comprise a polymer having a polymerization mechanism starting with photoinduced initiation.
[0021] According to one embodiment, the photosensitive polymer may comprise a photoinitiator configured to polymerize the photosensitive polymer or to depolymerize it.
[0022] According to one embodiment, the first radiation and / or the second light radiation are emitted by coherent lasers.
[0023] In this way, it is possible to select an irradiation zone in which the first radiation and / or the second light radiation are emitted. Said irradiation zone may correspond to a surface covered by a photosensitive polymer, for example the bonding layer.
[0024] Advantageously, the power of the coherent light radiation can thus be chosen to be sufficiently low so as not to damage the electronic device and sufficiently high to allow the adhesion of the photosensitive polymer to be modified.
[0025] According to one embodiment, the manufacturing element comprises a protective mask, the manufacturing method comprising an etching phase implemented after the bonding phase, in which an inter-device element adjacent to the electronic device undergoes etching, the protective mask being configured to protect the electronic device from said etching.
[0026] According to one embodiment, the etching phase is carried out by plasma etching.
[0027] According to one embodiment, the manufacturing method comprises a phase of manufacturing the protective mask, said phase of manufacturing the protective mask comprising the following steps: - a step of depositing a layer of metal which is intended to constitute the protective mask; - a step of depositing a layer of photoresist on said layer of metal; - a step of irradiating the photoresist layer with radiation light through a lithography mask, said lithography mask defining primary areas intended to be irradiated by the light radiation, and secondary areas intended to be protected by the lithography mask against the irradiation of said light radiation; - a step of developing the photoresist layer in which the photoresist is removed at the primary areas or at the secondary areas, so that the metal layer is no longer covered with photoresist at the said areas where the resin layer has been removed, and so that the metal layer is covered with the photoresist layer on the other areas; - an etching step in which an etching of the metal layer is carried out at the level of the areas not covered by the photosensitive resin layer, and in which an etching of the photoresist layer is carried out on the other areas.
[0028] According to one embodiment, the etching phase is carried out between the bonding phase and the release phase.
[0029] According to one embodiment, the protective mask is an aluminum mask, or a chrome mask or an aluminum nitride mask.
[0030] According to one embodiment, the protective mask is made of a non-metallic material such as SiO2, or alternatively by a semi-conductor layer.
[0031] According to one embodiment, the gas used for plasma etching is an octafluorocyclobutane / dioxygen (C4F8 / O2) mixture, or carbon tetrafluoride (CF4), or sulfur hexafluoride (SF6).
[0032] According to one embodiment, the manufacturing method comprises a cleaning phase implemented after the release phase, said cleaning phase comprising a step of removing the photosensitive polymer by plasma, solvent or air jet.
[0033] According to one embodiment, the electronic device comprises an optoelectronic device.
[0034] According to one embodiment, the first light radiation is ultraviolet radiation. Alternatively, the first light radiation may be infrared or visible radiation.
[0035] For example, the first wavelength may be between 190 nm and 400 nm and more particularly between 254 nm and 400 nm.
[0036] In this case, and synergistically, when the electronic device is an optoelectronic device, the photosensitive polymer can absorb a large part of the first light radiation, and in this way absorbs the radiation which can be harmful to the optoelectronic device.
[0037] According to one embodiment, the manufacturing method comprises a phase of transferring said at least one electronic device from the primary substrate to a secondary substrate implemented after the bonding phase. The transfer phase comprises: - a coupling step during which a transfer medium is attached to each electronic device to be transferred; - a step of detaching said at least one electronic device from the primary substrate by mechanical traction or dry etching; - a step of placing said at least one electronic device on a receiving surface of a secondary substrate.
[0038] According to a first embodiment, the manufacturing element is constituted by the transfer support. The transfer support is secured to each electronic device via the bonding layer.
[0039] According to this embodiment, the coupling step can be carried out by molding a molding material on each electronic device so as to form the transfer support by hardening the molding material. It is therefore well understood that the bonding layer can be arranged between the molding support and the electronic device. Advantageously, the transfer support can have gripping means configured to facilitate the movement of said transfer support.
[0040] According to a second embodiment distinct from the first embodiment, the transfer medium is configured to cooperate with the manufacturing element, the step of coupling the transfer medium to each electronic device to be transferred being implemented by means of securing the transfer medium to the manufacturing element. In other words, the transfer medium is secured indirectly to each electronic device to be transferred by means of the manufacturing element.
[0041] According to this embodiment, the transfer support may comprise a transfer handle configured to cooperate with the manufacturing element, for example by gluing.
[0042] Alternatively, the transfer support may be made by molding a molding material onto the manufacturing element, so as to form the transfer support by curing the molding material.
[0043] According to one embodiment, the transfer phase further comprises a step of moving the transfer support during which the transfer support is moved so as to implement the unhooking step and / or the positioning step.
[0044] According to one embodiment, the transfer phase is implemented before the release phase.
[0045] The arrangements described above make it possible to provide a transfer medium capable of simply transferring the optoelectronic device from the primary substrate to the secondary substrate. The bonding layer advantageously makes it possible to protect the electronic device during said transfer from the primary substrate to the secondary substrate. In particular, when the electronic device is an optoelectronic device, the transfer medium makes it possible to simply transfer the optoelectronic device from the primary substrate to a substrate for a luminous display screen.
[0046] According to one embodiment, the transfer support is made of a stretchable or shrinkable material.
[0047] According to one embodiment, the transfer phase comprises a step of stressing the transfer support in which the transfer support is stretched or compressed.
[0048] In this way, it is possible to stretch or compress the transfer medium to vary a distance between two electronic devices, for example according to a predetermined spacing. Thus it is possible to detach two electronic devices on the primary substrate according to a first spacing, and to put them in place on the secondary substrate at a second spacing different from the first spacing.
[0049] For example, the predetermined spacing may be defined as the spacing separating two electronic devices on the secondary substrate. For example, the predetermined spacing may be between 50 μm and 1 mm, and more particularly substantially equal to 100 μm. In this way, the transfer support makes it possible to selectively transfer the electronic devices to be deposited on the secondary substrate.
[0050] According to one embodiment, the transfer phase comprises a step of applying an adhesion layer to the transfer support or to a surface of the manufacturing element opposite its surface intended to come into contact with the bonding layer.
[0051] According to one embodiment, the step of applying the adhesion layer is implemented before the coupling step.
[0052] It is therefore clearly understood that the bonding layer is applied on the side of the manufacturing element facing the electronic device and that the adhesion layer is deposited on the other side of the manufacturing element, in particular facing the transfer support.
[0053] Brief description of the drawings
[0054] Other aspects, aims, advantages and characteristics of the invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made with reference to the appended drawings in which:
[0055] [Fig-1] [Fig. 1] is a schematic view of the bonding phase of the manufacturing process according to a first particular embodiment of the invention.
[0056] [Fig.2] [Fig.2] is a schematic view of the bonding phase of the process of manufacturing according to a second particular embodiment of the invention.
[0057] [Fig.3] [Fig.3] is a schematic view of the etching phase of the process of manufacturing according to a particular embodiment of the invention.
[0058] [Fig.4] [Fig.4] is a schematic view of the coupling stage of the phase of transfer according to a particular embodiment of the invention.
[0059] [Fig.5] [Fig.5] is a schematic view of certain stages of the transfer phase of the manufacturing process according to a particular embodiment of the invention.
[0060] [Fig.6] [Fig.6] is a schematic view of other steps in the transfer phase of [Fig.5].
[0061] [Fig.7] [Fig.7] is a schematic view of the release phase and the phase cleaning of the manufacturing process according to a particular embodiment of the invention.
[0062] [Fig-8] [Fig.8] is a schematic view of the release phase and the release phase. cleaning of the manufacturing process according to another particular embodiment of the invention. Detailed description
[0063] In the figures and in the remainder of the description, the same references represent identical or similar elements. Furthermore, the different elements are not shown to scale so as to enhance the clarity of the figures. Furthermore, the different embodiments and variants are not mutually exclusive and can be combined with each other.
[0064] As illustrated in Figures 1 to 8, the invention relates to a method for manufacturing an electronic device 1, or a plurality of electronic devices 1 arranged on a primary substrate 9, preferably intended to be fixed on a receiving surface of a secondary substrate 19, such as for example a substrate for a luminous display screen for the case of optoelectronic devices, which can be distributed over all or part of the free surface of the receiving surface.
[0065] The manufacturing method detailed below comprises a bonding phase PI of said electronic device 1 to a manufacturing element 3, 7 and may also comprise an etching phase P2, a transfer phase P3, a release phase P4, and a cleaning phase P5.
[0066] With reference to Figures 1 and 2, the bonding phase PI of the electronic device 1 with respect to a manufacturing element 3, comprises a step E1 of providing a primary substrate 9 comprising at least one electronic device 1. For example, the primary substrate 9 may comprise a plurality of electronic devices 1 arranged on the surface of the primary substrate 9 according to a first spacing DI. Advantageously, the plurality of electronic devices 1 may be attached to the primary substrate 9 via a primary adhesion layer 2. Each electronic device 1 may comprise an optoelectronic device comprising a light-emitting element comprising at least one light-emitting diode capable of emitting and / or capturing light, and possibly an electronic control component associated with said at least one light-emitting diode, such as for example a transistor.The electronic or optoelectronic devices 1 may have at least one interconnection pad 4 intended to cooperate with an interconnection interface 20 arranged on the surface of the secondary substrate 19. For example, each interconnection pad 4 may be intended to be soldered to the interconnection interface 20.
[0067] According to a non-limiting variant, the electronic devices 1 may have dimensions of between 1 μm and 1 mm. Furthermore, the distance between devices electronics 1 on the receiving surface of the secondary substrate 19 is between 1 pm and 2 mm.
[0068] Each electronic device 1 has a surface, for example a surface to be protected SI on which a bonding layer 11 consisting of a photosensitive polymer is applied so as to secure the bonding layer 11 and the electronic device 1 during a step E2. Alternatively or jointly, the step E2 of applying a photosensitive polymer can be carried out on an interface surface S2 of the manufacturing element 3, 7. Said interface surface S2 is configured to be brought into contact with the electronic device 1 via the bonding layer 11, so as to secure the bonding layer 11 and the manufacturing element 3, 7. According to one embodiment, the manufacturing element 3 consists of a manufacturing substrate 5 on which a layer having the interface surface S2 is deposited.It is therefore well understood that the step E2 of applying a photosensitive polymer can be carried out on the surface to be protected SI of the electronic device 1 as illustrated in [Fig.l], or on the interface surface S2 of the manufacturing element 3, as illustrated in [Fig.2], or jointly on the surface to be protected SI and on the interface surface S2. Advantageously, the photosensitive polymer can be configured to react when it is subjected to a first light radiation having a first wavelength. For example, the photosensitive polymer can be configured to liquefy or to depolymerize when it is subjected to the first light radiation.
[0069] The bonding phase PI may comprise a step E3 of treating the bonding layer 11 so as to increase the adhesion of said bonding layer 11. For example, the treatment step E3 may comprise exposing the bonding layer 11 to a second light radiation having a second wavelength, different from the first wavelength. The second light radiation may in particular be configured to increase the surface adhesion of the bonding layer 11. In other words, the photosensitive polymer may be chosen so as to have an increase in its adhesive power when exposed to a second light radiation. For example, the photosensitive polymer may be a positive resin such as siloxane resins, polymethacrylates or polyformaldehydes, polyphenols or polyimides.
[0070] By photosensitive polymer is meant a polymer capable of undergoing a photoinduced chemical reaction for its polymerization or depolymerization. For example, it may be a polymer / photoinitiator pair, such as a positive resin, or a polymer precursor and a given photoinitiator, such as a negative resin. Thus, the photosensitive polymer may comprise a photoinitiator configured to polymerize the photosensitive polymer or to depolymerize it.
[0071] According to a non-limiting variant, the first light radiation is ultraviolet radiation. Alternatively, the first light radiation may be infrared or visible radiation.
[0072] For example, the first wavelength may be between 190 nm and 390 nm and more particularly between 254 nm and 370 nm.
[0073] According to another non-limiting variant, the second light radiation is ultraviolet radiation. Alternatively, the second light radiation may be infrared or visible radiation.
[0074] For example, the second wavelength may be between 400 nm and 2000 nm and more particularly between 400 nm and 800 nm.
[0075] In this case, and in a synergistic manner, the photosensitive polymer can absorb a large part of the first light radiation and can thus absorb radiation which may be harmful to the electronic device 1, in particular if the latter comprises an optoelectronic device.
[0076] According to one embodiment, the first radiation and / or the second light radiation are emitted by coherent lasers. In this way, it is possible to select an irradiation zone in which the first radiation and / or the second light radiation are emitted. Said irradiation zone may correspond to a surface covered by a photosensitive polymer, for example the bonding layer 11. Advantageously, the power of the coherent light radiation can thus be chosen to be sufficiently low so as not to damage the electronic device 1 and sufficiently strong to allow the adhesion of the photosensitive polymer to be modified.
[0077] The bonding phase PI also comprises a step E4 of bringing the manufacturing element 3, 7 into contact with the electronic device 1 so as to cause the manufacturing element 3, 7 to adhere to the electronic device 1 via the bonding layer 11.
[0078] With reference to [Fig. 3], it may be provided that the manufacturing element 3 comprises a protective mask 13, for example configured to protect the electronic devices 1 from etching. Advantageously, the protective mask 13 may be metallic, for example an aluminum mask, or a chromium mask or an aluminum nitride mask so as to carry out fine etching. Thus, the bonding layer 11 makes it possible both to bond the electronic devices 1 to the protective mask 13, and to protect said electronic devices 1 from possible damage caused by the protective mask 13. Alternatively, the protective mask 13 may be made of a non-metallic material such as SiO2, or alternatively by a semiconductor layer.
[0079] In this case, the manufacturing method may comprise an etching phase P2 implemented after the bonding phase PI, in which an inter-device element 25 adjacent to the electronic device 1 undergoes etching, for example plasma etching, the protective mask 13 being configured to protect the electronic device 1 from said plasma etching. Generally, the gas used for plasma etching may be an octafluorocyclobutane / dioxygen (C4F8 / O2) mixture, or carbon tetrafluoride (CF4), or sulfur hexafluoride (SF6).
[0080] As illustrated in Figures 4 to 6, the manufacturing method may comprise a transfer phase P3 of one or more electronic devices 1 from the primary substrate 9 to a secondary substrate 19 implemented after the bonding phase PI. The transfer phase P3 is in particular implemented before the release phase P4.
[0081] According to a first embodiment, the manufacturing method may comprise a coupling step E71 during which a transfer support 7 is secured to each optoelectronic device 1 to be transferred via the bonding layer 11 as illustrated in [Fig. 4]. In this case, the transfer support 7 may constitute the manufacturing element 3.
[0082] Generally, the coupling step E71 is implemented simply by using a transfer handle constituting the transfer support, which is capable of being secured to each electronic device 1, for example by adhesion with the bonding layer.
[0083] According to another variant, the coupling step E71 can be carried out by molding a molding material on each electronic device 1 so as to form the transfer support 7 by hardening the molding material. It is therefore clearly understood that the bonding layer 11 can be arranged between the transfer support 7 and the electronic device 1.
[0084] According to a second embodiment, distinct from the first embodiment and represented in figures 5 and 6, the transfer support 7 is configured to cooperate with the manufacturing element 3. The step E71 of coupling the transfer support 7 to each electronic device 1 to be transferred is then implemented by means of the securing of the transfer support 7 with the manufacturing element 3. It is therefore clearly understood that according to this embodiment, the transfer support 7 is distinct from the manufacturing element 3. Thus, the transfer support 7 is secured indirectly to each electronic device 1 to be transferred by means of the manufacturing element 3 during the coupling step E71.
[0085] According to this embodiment, the transfer support 7 may comprise a transfer handle, made available during a step E5 of providing a transfer handle, and configured to cooperate with the manufacturing element 3, for example by gluing.
[0086] Alternatively, the transfer support 7 may be made by molding a molding material onto the manufacturing element 3, so as to form the transfer support 7 by hardening the molding material.
[0087] Advantageously, the transfer support 17 can be made of a stretchable or shrinkable material.
[0088] The transfer phase P3 may further comprise a step E6 of applying an adhesion layer 23 to the transfer support 7, or to a surface of the manufacturing element 3 opposite its surface intended to come into contact with the bonding layer 11. It is therefore clearly understood that the bonding layer 11 is applied on the side of the manufacturing element 3 facing the electronic device 1 and that the adhesion layer 23 is deposited on the other side of the manufacturing element 3, in particular facing the transfer support 7.
[0089] Advantageously, the adhesion layer 23 may be configured to have sufficient adhesion to allow the coupling of the transfer medium 7 with the electronic device 1 via the manufacturing element 3, and the bonding layer 11 during the coupling step E71. In particular, the adhesion layer 23 may be treated, for example by chemical treatment or by exposure to light radiation.
[0090] The transfer phase P3 may then comprise a step E8 of detaching said at least one electronic device 1 from the primary substrate 9 by mechanical traction or dry etching. The transfer support 7 may have gripping means configured to facilitate the movement of said transfer support 7.
[0091] In the case where the transfer support 7 is made of a stretchable or shrinkable material, it can then be stretched or compressed during a step E9 of stressing the transfer support 7. In this way, it is possible to stretch or compress the transfer support 7 to vary a distance between two electronic devices 1, such as for example to reach a predetermined spacing. Advantageously, the predetermined spacing can be defined as the spacing separating two electronic devices 1 on the secondary substrate 19. For example, the predetermined spacing can be between 50 μm and 1 mm, and more particularly substantially equal to 100 μm. In this way, the transfer support 7 makes it possible to selectively transfer the electronic devices 1 to be deposited on the secondary substrate 19.Thus it is possible to detach two electronic devices 1 from the primary substrate 9 according to a first spacing D1, and to place them on the secondary substrate 19 according to a second spacing D2 different from the first spacing. Advantageously, the second spacing D2 can be between 1 μm and 2 mm.
[0092] Finally, the transfer phase P3 may comprise a step E10 of placing said at least one electronic device 1 on a receiving surface of a secondary substrate 19. In this way, the transfer support 7 makes it possible to simply transfer the electronic device 1 from the primary substrate 9 to the secondary substrate 19. The bonding layer 11 advantageously makes it possible to protect the electronic device 1 during said transfer from the primary substrate 9 to the secondary substrate 19. In particular, when the electronic device 1 is an optoelectronic device, the transfer support 7 makes it possible to simply transfer the optoelectronic device from the primary substrate 9 to a substrate for a luminous display screen.Generally, a step E73 of moving the transfer support 7 can be implemented, during which the transfer support 7 is moved so as to implement the step E8 of unhooking and / or the step E10 of positioning.
[0093] As illustrated in [Fig.6], the step E10 of placing said at least one electronic device 1 on the receiving surface of the secondary substrate 19 may comprise the cooperation of each interconnection pad 4 with an interconnection interface 20 arranged on the surface of the secondary substrate 19, for example by soldering. Advantageously, alignment elements, such as for example alignment marks associated with optical devices or lasers, may be provided to allow the placing of the electronic devices 1 on the receiving surface of the secondary substrate 19.
[0094] With reference to Figures 7 and 8, the manufacturing method further comprises a release phase P4 in which the bonding layer 11 is exposed to the first light radiation having a first wavelength so as to dissociate the manufacturing element 3 from the bonding layer 11. Thus, the release phase P4 makes it possible to separate the electronic device 1 from the manufacturing element 3, and consequently from the transfer support 7 when the latter is secured to the manufacturing element 3. A cleaning phase P5 that can be implemented after the release phase P4 comprises a step E1 1 of removing the photosensitive polymer by plasma, solvent or air jet.
[0095] The arrangements described above make it possible to propose a manufacturing method in which the electronic devices 1 are linked to the manufacturing element 3, or to the transfer support 7 via the bonding layer 11. Furthermore, and in a synergistic manner, the bonding layer 11 also makes it possible to protect the electronic devices 1 against damage caused by contact with the manufacturing element 3, or the transfer support 7. In addition, the bonding layer 11 advantageously makes it possible to improve the adhesion of the electronic device 1 with the manufacturing element 3. The photosensitive properties of the polymer make it possible in in addition to being able to simply remove it during the release phase P4 without causing damage to the surface of the electronic device 1.
[0096] Generally speaking, the dissociation of the manufacturing element 3 with respect to the bonding layer 11 is achieved by liquefaction of the photosensitive polymer constituting the bonding layer 11 when it is subjected to the first light radiation.
[0097] The bonding layer 11 allows the electronic device 1 to be bonded to the manufacturing element 3, and the release phase P4 allows said manufacturing element 3 to be detached from the electronic device 1. In other words, the protection phases PI and release P4 allow reversible bonding and detachment of the electronic device 1 and the manufacturing element 3.
Claims
Claims
1. A method of manufacturing an electronic device (1) comprising a bonding phase (PI) of said electronic device (1) to a manufacturing element (3, 7), the manufacturing element (3) comprising a protective mask (13), said bonding phase (PI) comprising: - a step (El) of providing a primary substrate (9) comprising at least one electronic device (1); - a step (E2) of applying a bonding layer (11) made of a photosensitive polymer, during which the bonding layer (11) is applied to a surface of the electronic device (1) so as to secure the bonding layer (11) and the electronic device (1) and / or to an interface surface (S3) of the manufacturing element (3, 7) so as to secure the bonding layer (11) and the manufacturing element (3, 7);- a step (E4) of bringing the manufacturing element (3, 7) into contact with the electronic device (1) so as to make the manufacturing element (3, 7) adhere to the electronic device (1) via the bonding layer (11); the manufacturing method comprising an etching phase (P2) implemented after the bonding phase (PI), in which an inter-device element (25) adjacent to the electronic device (1) undergoes etching, the protective mask (13) being configured to protect the electronic device (1) from said etching; the manufacturing method further comprising a release phase (P4) in which the bonding layer (11) is exposed to a first light radiation having a first wavelength so as to dissociate the manufacturing element (3, 7) from the electronic device (1).;
2. A manufacturing method according to claim 1, wherein the bonding phase (PI) comprises a step (E3) of treating the bonding layer (11) so as to increase the adhesion of said bonding layer (11), the treatment step (E3) comprising exposing the bonding layer (11) to a second light radiation having a second wavelength, different from the first wavelength.
3. A manufacturing method according to claim 2, wherein the first radiation and / or the second light radiation are emitted by coherent lasers.
4. Manufacturing method according to any one of claims 1 to 3, in which the etching phase (P2) is carried out by plasma etching.
5. Manufacturing method according to any one of claims 1 to 4, comprising a cleaning phase (P5) carried out after the release phase (P4), said cleaning phase (P5) comprising a step (El 1) of removing the photosensitive polymer by jet of plasma, solvent or air.
6. A manufacturing method according to any one of claims 1 to 5, wherein the electronic device (1) comprises an optoelectronic device.
7. A manufacturing method according to any one of claims 1 to 6, wherein the first light radiation is ultraviolet radiation.
8. Manufacturing method according to any one of claims 1 to 7, comprising a transfer phase (P3) of said at least one electronic device (1) from the primary substrate (9) to a secondary substrate (19) implemented after the bonding phase (PI), said transfer phase (P3) comprising: - a coupling step (E71) during which a transfer support (7) is secured to each electronic device (1) to be transferred; - a step (E8) of detaching said at least one electronic device (1) from the primary substrate (9) by mechanical traction or dry etching; - a step (E10) of placing said at least one electronic device (1) on a receiving surface of the secondary substrate (19).
9. A manufacturing method according to claim 8, wherein the transfer phase (P3) is carried out before the release phase (P4).
10. Manufacturing method according to any one of claims 8 or 9, wherein the transfer phase (P3) further comprises a step (E73) of moving the transfer support (7) during which the transfer support (7) is moved so as to implement the step (E8) of unhooking and / or the step (E10) of positioning.
11. A manufacturing method according to any one of claims 8 to 10, wherein the manufacturing element (3) is constituted by the transfer support (7).
12. Manufacturing method according to any one of claims 8 to 10, wherein the transfer support (7) is configured to cooperate with the manufacturing element (3), the step (E71) of coupling the transfer support (7) to each electronic device (1) to be transferred being implemented by means of securing the transfer support (7) with the manufacturing element (3).
13. A manufacturing method according to claim 12, wherein the transfer support (7) is made of a stretchable or shrinkable material.
14. Manufacturing method according to claim 13, wherein the transfer phase (P3) comprises a step (E9) of stressing the transfer support (7) in which the transfer support (7) is stretched or compressed.
15. Manufacturing method according to any one of claims 12 to 14, in which the transfer phase (P3) comprises a step (E6) of applying an adhesion layer (23) on the transfer support (7), or on a surface of the manufacturing element (3) opposite its surface intended to come into contact with the bonding layer (11).
16. Manufacturing method according to claim 15, wherein the step (E6) of applying an adhesion layer (23) is carried out before the coupling step (E71).