Broadband antenna in the frequency range of 1 THz to 800 THz connected to a Graetz bridge consisting of 4 diodes to utilize both alternations of the sinusoidal current wave at the surface of the antenna.

Abstract

A broadband antenna in the frequency range of 1 THz to 800 THz is connected to a Graetz bridge consisting of four diodes arranged so that the two alternations of the sinusoidal surface current wave are used to produce a direct current that can be collected by a conductive or superconducting material to power a load and a manufacturing process. [fig A]

Description

Title of the invention: Broadband antenna in the frequency range of 1 THz to 800 THz connected to a Graetz bridge consisting of 4 diodes to use the two sinusoidal ground alternations of current on the surface of the antenna.

[0001] This broadband antenna in the frequency range of 1 THz to 800 THz is used to produce a direct current that can be collected by a conductive or superconducting material to power a load. A manufacturing method is also proposed. State of the art:

[0002] Population growth goes hand in hand with a growing need for energy. Indeed, approximately 88% of global energy production comes from fossil fuels such as coal, gas, and oil. Furthermore, although nuclear power is not considered a fossil fuel, the use of uranium and plutonium brings our dependence on terrestrial raw materials to approximately 90%.

[0003] This dependence is a problem because energy needs are increasing at such a rate that Earth's reserves are becoming limited on a human timescale. The use of alternative energy sources compatible with sustainable development is therefore one of the major challenges of this century.

[0004] Renewable energies appear to be one of the keys to a balance between energy needs arising from population growth and the factors of sustainable development.

[0005] It is important to bear in mind that the sun is a free and virtually unlimited source of energy on a human timescale. Indeed, the sun is the source of most terrestrial energy (hydropower, wind power, tidal power, photosynthesis, biochemical processes). This energy comes from the electromagnetic radiation generated by the internal nuclear reactions of the star.

[0006] Currently, the conversion of electromagnetic energy into electrical energy is primarily achieved through the photovoltaic effect using semiconductor materials such as silicon (Si), with industrial efficiencies on the order of 15%, but the maximum efficiency of conversion by the photovoltaic effect is estimated at 30%. The photovoltaic effect is based on the photonic nature of light. However, the electromagnetic field can also be harnessed to directly convert electromagnetic energy into electrical energy.

[0007] This concept of exploiting the electromagnetic nature of light for direct conversion into electrical energy was proposed by J.C. Maxwell, by H. Hertz, by N. Tesla, then by Robert Bailey in 1972 and patented under publication reference US3760257 A.

[0008] US publication 8847824 B2 proposes an antenna coupled to element detectors in which the antenna powers a diode.

[0009] Another approach is proposed in WO 2016 / 202995 which proposes a photodetector device for the detection of infrared, visible and ultraviolet radiation, the photodetector containing a spectral response that can be adjusted to obtain sensitivity to different design wavelengths.

[0010] The photodetector comprises at least one substrate, a first electrode, a second electrode and at least one organic material which is ordered between the first electrode and the second electrode, a Schottky barrier (metal-semiconductor junction) at the interface between the first electrode and the organic material and / or between the second electrode and the organic material.

[0011] Patent EP3493283 describes a rectified antenna with a molecular diode sized for infrared or visible frequencies. However, by design, only one half-cycle of the sinusoidal current wave is used. There is an impedance matching constraint. The efficiency is not optimized. According to some embodiments of this patent, the connection for powering a load is not provided by the design. This presents disadvantages for those skilled in the art who wish to use this invention.

[0012] US patent 11296240 describes a rectified antenna with elements sized for infrared frequencies. By design, the design proposes using the two sinusoidal current half-cycles with parallel Graetz half-bridges to increase the current, but raises concerns about the connection for powering a load due to the junction arrangement. Furthermore, the shallow silicon grooves between the two respective pn sections generate leakage currents. Moreover, using such array configurations limits the potentially usable frequency range. There is an impedance matching constraint due to the array configuration. The efficiency is not optimized. The power output is low. This presents drawbacks for those skilled in the art who might wish to use this invention.

[0013] Numerous patents (US11271434B2, US2022166259A1, US2022006424A1, CN114171933A,...) or publications (US, CN, FR,...) propose the use of electromagnetic waves in infrared frequency ranges. However, beyond everything presented in the literature to date, including everything referring to rectified antennas, one of the main technical obstacles is that at the proposed wavelengths, known rectifier elements generally do not behave like localized elements. Another drawback is that the Rectified antennas are presented as a two-terminal device; this is difficult to achieve given the proposed configurations. Finally, the charge carrier transport effects in diodes are generally too slow or inefficient at the desired frequencies to allow the direct conversion of electromagnetic radiation into electrical energy.

[0014] There is therefore a real need to create an invention for converting electromagnetic waves into electrical energy, from infrared to ultraviolet, with maximum efficiency, high yield and usable at a lower cost.

[0015] Thus, increasing the efficiency of a patented or industrialized device such as solar panels would make it possible to reduce the surface area used on the ground or roof and consequently reduce the impact on the environment at equivalent electricity production and at equivalent cost.

[0016] This increase in efficiency would, while lowering costs, help to address one of the major challenges of this century, linked in particular to the current energy problem, to contribute to the commitments of the climate plan within the framework of the ecological transition, to respond to the latest multi-year energy program which provides for a rebalancing of the French energy mix by 2035-2050, and to supply electricity to lunar or space missions. Summary of the invention

[0017] To remedy the few drawbacks described above, the device proposes a broadband antenna in the frequency range of 1 THz to 800 THz connected to a Graetz bridge consisting of 4 diodes arranged so that the two alternations of the sinusoidal wave of surface currents are used to produce a direct current which can be collected by a conductive or superconducting material to power a load.

[0018] In practical terms, the device is made of different materials and such that from the incident sinusoidal electromagnetic waves collected in the frequency range of 1 THz to 800 THz, the generated currents propagate across the surface of the antenna at one or more operating wavelengths, and pass through a Graetz bridge made up of 4 diodes arranged so that the two alternations of the sinusoidal current wave are used to produce a direct current which can be collected by a conductive or superconducting material to power a load.

[0019] The device, from an appropriate design, makes it possible to adapt the impedance between the external environment and the antenna and to increase the efficiency compared to the latest known state of the art.

[0020] The device is dimensioned based on at least one parameter such as, for example an operating wavelength, said at least one dimensioning parameter being chosen from a group comprising the dimensions of the device materials. Brief description of the drawings

[0021] The invention will be better understood from the description of a number of figures.

[0022] [Fig.A] Figure A is a schematic view according to one embodiment of the device.

[0023] [Fig.B] Figure B is a schematic view according to a second embodiment of the device.

[0024] [Fig.C] Figure C is a schematic view according to a third embodiment of the device.

[0025] [Fig.D] Figure D is a schematic cross-sectional view according to one embodiment of the device.

[0026] [Fig.E] Figure E is a 3D view according to one embodiment of the device (example of a network).

[0027] [Fig. F] Figure F is a schematic diagram of an antenna connected to a bridge of Graetz, according to an embodiment of the device and on which the direction of the current to supply a load is indicated.

[0028] [Fig.G] Figure G is a diagram representing a 2D mapping of the confined electromagnetic field centered in a plane normal to the axis, according to one embodiment of the device.

[0029] [Fig. H] Figure H is a diagram representing the gap dispersion curve plasmon, according to certain embodiments of the device.

[0030] [Fig.I] Figure I is a diagram representing the evolution of the total absorption of an element of the antenna as a function of the wavelength of incidence (X) and the angle of incidence (0), according to one embodiment of the device.

[0031] [Fig. J] Figure J shows the results of the numerical simulation of the generated current for three visible wavelengths (650 nm, 700 nm, 750 nm), at a temperature of 300 K, for an electric field of 10 mV, in a Metal Insulator Metal junction of 2 nm in length, with an insulator of dielectric constant equal to 3, according to an embodiment of the device. Description of the invention:

[0032] The proposed device (A1000) is a broadband antenna in the frequency range of 1 THz to 800 THz connected to a Graetz bridge consisting of 4 diodes arranged such that the two sinusoidal Fundamental alternations of surface currents are used to produce a direct current which can be collected by a conductive or superconducting material to power a load.

[0033] In practical terms, the device is made of different materials and in such a way that from the incident sinusoidal electromagnetic waves collected in the frequency range of 1 THz to 800 THz, the generated currents propagate on the surface of the antenna at one or more operating wavelengths, and pass through a Graetz bridge made up of 4 diodes arranged in such a way that the two alternations of the sinusoidal current wave are used to produce a direct current which can be collected by a conductive or superconducting material to power a load.

[0034] The device, from an appropriate design, makes it possible to adapt the impedance between the external environment and the antenna and to increase the efficiency compared to the latest known state of the art.

[0035] The device is dimensioned from at least one dimensioning parameter such as an operating wavelength, said at least dimensioning parameter being chosen from a group comprising the dimensions of the materials of the device, for example the thickness of a metallic layer.

[0036] Embodiments of the device can be applied in several fields including, without limitation, the conversion of electromagnetic waves into electricity, photodetection and imaging in devices operating in the wavelength range between 300 nm and 3000 nm.

[0037] To facilitate understanding of the embodiments of the device, the important points are set out below.

[0038] When electromagnetic waves enter an antenna, the conduction electrons of the antenna metal are subjected to rapid oscillations in the antenna's conductive materials.

[0039] Couplings exist between electromagnetic waves and conduction electrons, and in this case, they are called "plasmons." Within the antenna, there is then an alternating current, generally considered sinusoidal, with a high frequency, which can range from 1 THz to 800 THz, depending on the value of the incident wave arriving at the antenna. Such an alternating current, which generally propagates along the surface of the metal, can be rectified with a high intensity by one or more diodes.

[0040] These mechanisms are similar to the mechanisms generated during the reception of radio waves with conventional antennas but must nevertheless be adapted by taking some precautions in view of the size of the materials and the frequency spectrum used in the device.

[0041] The efficiency of electromagnetic wave-to-electrical current conversion refers to the ratio between the energy input and the electrical energy output. A theoretical efficiency of 100% refers to a lossless conversion. of energy.

[0042] In normal operation, the incident electromagnetic radiation from a source produces an electric field of oscillating frequency within the material, provided the impedance is matched between the external environment and the material. In the case of a tunnel junction, the field induces a current or photocurrent which is rectified so that it can be used to power a load.

[0043] In the case of an n- and p-doped semiconductor diode, for example, and for wavelengths optimized for normal operation, the transverse electric field component inside the tunnel barrier has opposite polarities on the n-side and the p-side, respectively. The electromagnetic field acts as a current pump.

[0044] Indeed, the generated current can be considered, under certain conditions, as one of the consequences of photon-assisted tunneling. Theoretical predictions of photon-assisted tunneling were first formulated by John Bardeen to calculate tunneling currents between a superconductor and a normal metal. It should be noted that Brian Josephson also studied supercurrents and metal-insulating-metal (MIM) junctions at different temperatures.

[0045] It is important to remember from these studies that the electrical response of this type of structure to incident electromagnetic radiation is very sensitive to the intensity of the electric field inside the tunnel barrier.

[0046] It is also important to note that for THz frequencies, the dielectric constants of the materials used exhibit frequency responses with a real part and an imaginary part which must be taken into account in the dimensioning calculations of the present device.

[0047] Furthermore, the overall effectiveness of the device is obtained by multiplying at a minimum the two factors:

[0048] - the efficiency of coupling the radiation incident at the antenna,

[0049] - the propagation efficiency of the energy collected from the antenna to the load.

[0050] The efficiency of coupling incident radiation to the antenna structure represents a very important factor in determining the overall efficiency of the structure.

[0051] The operating frequency, is called the working frequency, and refers to the working wavelength denoted X.

[0052] Size refers to the width, length and height of each element of the antenna.

[0053] According to some embodiments of the device, the height is not less than 10 nm.

[0054] According to some embodiments of the device, the height is greater than 1 pm.

[0055] According to certain embodiments of the device, the width is not less than 50 nm.

[0056] According to some embodiments of the device, the width is less than 1 pm.

[0057] According to certain embodiments of the device, the length L is not less than 50 nm.

[0058] According to certain embodiments of the device, the x, y, z coordinate system in which the unit vectors are represented (for example in Figures A, B, C) defines a Cartesian system, and the unit vectors define respectively the x-axis and the y-axis of the plane on which the substrate is deposited. The electric field parallel respectively to the x-axis, y-axis, and altitude is denoted respectively Ex, Ey, Ez.

[0059] According to certain embodiments of the device, the incident electromagnetic waves can be recovered by the device in order to generate surface currents propagating along the first and last metallic layers and exhibiting an electric field along the unit vector.

[0060] According to some embodiments, when the antennas include non-rectangular or non-circular patterns, the size refers to the dimensions that define said pattern.

[0061] According to some embodiments, if the antenna is composed of a periodic array in space, the elementary cell is defined as the smallest fraction of space, with a finite volume, such that it can ensure the tiling of space by translation by a vector t = ma + nb + pc (where (n, m, p) are positive integers). Here, a, b, and c are three vectors that can be written in terms of the unit vectors of an orthonormal reference. Then, the periodicity (or spacing) along an axis is given by a, b, and c. In the case of an antenna array configuration, the techniques for placing the resonance of the array at a desired wavelength are well known and do not need to be described in detail here. The design parameters of the array are simply adjusted in the case of a numerical simulation until the desired response is obtained.

[0062] According to certain embodiments, the operating wavelength X can be determined from the length of the device (L) and the effective refractive index (neff) of the electromagnetic mode in the material considered (X = 2Lneff). From an electromagnetic point of view, the device behaves like an open cavity. The electromagnetic waves that may exist inside the cavity must therefore take into account boundary conditions, and thus the dimensions of the device.

[0063] According to some embodiments of the device, the operating wavelength X is between 200 nm and 6 pm.

[0064] According to some embodiments, the thickness of the gap or plasmon generation site: the place where electromagnetic waves are confined and most intense, can The distance should be between 1 nm and the resonance wavelength. It is important to note that for such distances (generally less than the coherence length and on the order of 50 nm for Si), quantum effects, particularly tunneling and coupling effects, cannot be neglected and must be taken into account when sizing the device.

[0065] According to certain embodiments of the device, in which there is a transparent conductive layer, the thickness of this layer can be up to 100 nm.

[0066] According to some embodiments, the angle of incidence is not strictly normal. It is therefore important to study the angle-dependent response of the structure to evaluate whether the resonance and the amount of absorption change when the angle of incidence varies.

[0067] According to certain embodiments of the device (A1000), the substrate (A1001) can be made of silicon (Si), or made of any other insulating material.

[0068] According to certain embodiments of the device, for each layer of material defined as an n- or p-doped semiconductor layer, the semiconductor material such as, for example, silicon is doped using an implantation of phosphorus or boron.

[0069] According to certain embodiments of the device, for each layer of material defined as an n- or p-doped semiconductor layer, the semiconductor material such as, for example, silicon is doped using an implantation of gallium or arsenic.

[0070] According to certain embodiments of the device, for each layer of material defined as an n- or p-doped semiconductor layer, the neutral semiconductor material such as, for example, silicon is doped using an indium or bismuth implantation.

[0071] According to certain embodiments of the device, the material layers (A1004, A1006, A1009, A1011) can be conductive or semiconductive. This improves charge transfer from the diodes, particularly to the material layers, which can be p- or n-doped, so that current can flow more easily to a connected external load.

[0072] According to certain embodiments of the device, the material layers (A 1004, A1006, A1009, A1011) are p- or n-doped.

[0073] According to certain embodiments of the device, the material layers (A 1004, A1006, A1009, A1011) can be conductive or semiconductive. This improves charge transfer from the diodes, particularly to the superconducting material layers (x) so that current can flow more easily to a connected external load.

[0074] According to certain embodiments of the device, the layers of materials (A 1004, A1006, A1009, A1011) are insulating layers, for example silicon or any other insulating material, to create Metal Insulating Metal or Metal Insulating Superconducting junctions.

[0075] According to certain embodiments of the device, the material layers (A1003, A1007, A1008, A1012) can be conductive or semiconductive. This improves charge transfer from the diodes, particularly to the material layers, which can be p- or n-doped, so that current can flow more easily to a connected external load.

[0076] According to certain embodiments of the device, the material layers (A 1003, A1007, A1008, A1012) are p- or n-doped.

[0077] According to certain embodiments of the device, the material layers (A1007, A1012) can be made up of molecular junctions a few nm in length.

[0078] According to certain embodiments of the device, the second metallic layer (A1005), and / or the third metallic layer (A1010), are formed of a superconducting material, such as for example TIBaCaCuO, or a compound of Neodymium, or Dysprosium, but not limited to it, to operate at terrestrial or space ambient temperature.

[0079] According to some embodiments of the device, the insulating layer (A1013) allows the doped layers to be electrically separated and ensures the operation of the Graetz bridge.

[0080] According to some embodiments of the device, the insulating layer (A1013) is used among other things to adapt the impedance between the external environment and the antenna.

[0081] According to certain embodiments of the device, the insulating layer (A1013) can be made of a suitable material and such that the refractive index varies in the height-width plane.

[0082] According to some embodiments of the device, the insulating layer (A1013) can be made of silicon (Si) or made of doped silicon or made of any other doped insulating material.

[0083] According to certain embodiments of the device, the height of the insulating layer (A1013) is not less than 50 nm. This facilitates impedance matching between the external environment and the antenna.

[0084] According to certain embodiments of the device, the width of the insulating layer (A1013) is not less than the coherence length of the material used (in practice, on the order of 50 nm for Si). This makes it possible to greatly limit leakage currents in the Graetz bridge.

[0085] According to certain embodiments of the device, the first metallic layer (A1002), and / or the second metallic layer (A1005), and / or the third metallic layer The talic (A 1010), and / or the fourth metallic layer (A 1014) may be formed of a material chosen such as, for example, but not limited to, from a group including aluminium (Al), silver (Ag), gold (Au), tungsten (W) or copper (Cu).

[0086] According to some embodiments, the device can act as a diffusion center which couples the incident wave to the base materials.

[0087] According to some embodiments, the materials of the device can each have a predefined geometry.

[0088] According to certain embodiments, the device may have a particular geometry such as, but not limited to, a circle, an ellipse, a rhombic, rectangular, square or strip shape for example.

[0089] According to some embodiments, the device can be arranged periodically in a lattice, in a network, or randomly.

[0090] According to some embodiments, the device can be arranged along a network with a predefined periodicity (Pr).

[0091] According to certain embodiments of the device and to enhance the electron and hole transport properties, the thickness of each material can be between 1 nm and 100 nm.

[0092] According to some embodiments, the operating wavelength can vary from one to one hundred times the total thickness of the device.

[0093] According to certain embodiments of the device, the operating wavelength X can be determined from the geometric parameters of the device, such as the periodicity, and / or the width and / or and / or the length and / or the thickness of the base materials.

[0094] According to certain embodiments of the device, and in particular in the case of a network, the operating wavelength may be greater than one times the periodicity of the plurality A1000 to allow better dispersion of light.

[0095] According to some embodiments, a transparent layer can be deposited on top of the device.

[0096] Optimization according to certain embodiments of the device and calculation of energy transfer to the load can be carried out using partial differential equation processing techniques, with regard to fields, plasmons and currents.

[0097] The main sources of information in the literature for obtaining the calculation formulas used can be found in the following articles:

[0098] J. Bardeen, Tunneling from a many particle point of view, Phys. Rev. Lett., 6, Jan. 1961;

[0099] J. Davis, Surface plasmon modes in multi-layer thin-films, Optics Communications, 2009;

[0100] CA Balanis, Antenna Theory: Analysis and Design (John Wiley and Sons, Hoboken, NJ, 2005).

[0101] All simulations were carried out either by developing specific codes in C and / or Python, or by adapting free and open software with classical methods of solving partial differential equations.

[0102] According to a first embodiment (Figure A), the device (A 1000) comprises:

[0103] - a substrate (A1001), which serves as a support;

[0104] - a first metallic layer (A1002), which serves as an antenna element, deposited on the top of substrate (A1001);

[0105] - a first p-doped semiconductor layer (A1003), deposited above the first metallic layer (A 1002);

[0106] - a second n-doped semiconductor layer (A1004), deposited above the first p-doped semiconductor layer (A1003);

[0107] - a second metallic layer (A1005), which serves as a collector, deposited above of the second n-doped semiconductor layer (A 1004);

[0108] - a third n-doped semiconductor layer (A1006), deposited above the second metallic layer (A1005);

[0109] - a fourth p-doped semiconductor layer (A1007), deposited above the third n-doped semiconductor layer (A 1006);

[0110] - a fifth n-doped semiconductor layer (A1008), deposited above the first metallic layer (A 1002);

[0111] - a sixth p-doped semiconductor layer (A1009), deposited above the fifth n-doped semiconductor layer (A1008);

[0112] - a third metallic layer (A1010), which serves as a collector, deposited above of the sixth p-doped semiconductor layer (A 1009);

[0113] - a seventh p-doped semiconductor layer (A1011), deposited above the third metallic layer (A 1010);

[0114] - an eighth n-doped semiconductor layer (A1012), deposited above the seventh p-doped semiconductor layer (A1011);

[0115] - an insulating layer (A1013), which allows the layers to be electrically separated doped and to ensure the operation of the Graetz bridge and to adapt the impedance between the external environment and the antenna, deposited above the first metallic layer (A1002);

[0116] - a fourth metallic layer (A1014), which serves as an antenna element, deposited at above the fourth p-doped semiconductor layer (A1007), the eighth n-doped semiconductor layer (A1012), and the insulating layer (A1013).

[0117] The device is dimensioned based on at least one dimensioning parameter such as an operating wavelength, said at least dimensioning parameter being chosen from a group comprising the dimensions of the device materials.

[0118] According to a second embodiment (Figure B), the device (A1000) comprises:

[0119] - a substrate (A1001), which serves as a support;

[0120] - a first metallic layer (A1002), which serves as an antenna element, deposited on the top of substrate (A1001);

[0121] - a first p-doped semiconductor layer (A1003), which serves as a barrier of potential, deposited above the first metallic layer (A1002);

[0122] - a second semiconductor layer (A1004), which serves as an insulator, deposited on- above the first p-doped semiconductor layer (A1003);

[0123] - a second metallic layer (A1005), which serves as a collector, deposited above of the second semiconductor layer (A 1004);

[0124] - a third p-doped semiconductor layer (A 1006), which serves as a barrier potential, deposited above the second metallic layer (A1005);

[0125] - a fourth semiconductor layer (A1007), which serves as an insulator, deposited on- above the third p-doped semiconductor layer (A1006);

[0126] - a fifth n-doped semiconductor layer (A1008), which serves as a barrier potential, deposited above the first metallic layer (A1002);

[0127] - a sixth semiconductor layer (A1009), which serves as an insulator, deposited on- above the fifth n-doped semiconductor layer (A1008);

[0128] - a third metallic layer (A1010), which serves as a collector, deposited above of the sixth semiconductor layer (A 1009);

[0129] - a seventh n-doped semiconductor layer (A1011), which serves as a barrier potential, deposited above the third metallic layer (A1010);

[0130] - an eighth semiconductor layer (A1012), which serves as an insulator, deposited on- above the seventh semiconductor layer (A1011);

[0131] - an insulating layer (A1013), which allows the layers to be electrically separated doped and to ensure the operation of the Graetz bridge and to adapt the impedance between the external environment and the antenna, deposited above the first metallic layer (A1002);

[0132] - a fourth metallic layer (A1014), which serves as an antenna element, deposited at above the fourth semiconductor layer (A1007), the eighth semiconductor layer (A1012), the insulating layer (A1013).

[0133] The device is dimensioned from at least one dimensioning parameter such as an operating wavelength, said at least dimensioning parameter being chosen from a group comprising the dimensions of the materials of the device.

[0134] According to a third embodiment (Figure C), the device (A1000) comprises:

[0135] - a substrate (A1001), which serves as a support;

[0136] - a first metallic layer (A1002), which serves as an antenna element, deposited on the top of substrate (A1001);

[0137] - a first p-doped semiconductor layer (A1003), which serves as a barrier of potential, deposited above the first metallic layer (A1002);

[0138] - a second semiconductor layer (A1004), which serves as an insulator, deposited on- above the first p-doped semiconductor layer (A1003);

[0139] - a second metallic layer (A1005), which serves as a collector, deposited above of the second semiconductor layer (A 1004);

[0140] - a third semiconductor layer (A1006), which serves as an insulator, deposited on- above the second metallic layer (A1005);

[0141] - a fourth p-doped semiconductor layer (A1007), which serves as a barrier potential, deposited above the third semiconductor layer (A1006);

[0142] - a fifth n-doped semiconductor layer (A1008), which serves as a barrier potential, deposited above the first metallic layer (A1002);

[0143] - a sixth semiconductor layer (A1009), which serves as an insulator, deposited on- above the fifth n-doped semiconductor layer (A1008);

[0144] - a third metallic layer (A1010), which serves as a collector, deposited above of the sixth semiconductor layer (A 1009);

[0145] - a seventh semiconductor layer (A1011), which serves as an insulator, deposited on- above the third metallic layer (A1010);

[0146] - an eighth n-doped semiconductor layer (A 1012), which serves as a barrier potential, deposited above the seventh semiconductor layer (A1011);

[0147] - an insulating layer (A1013), which allows the layers to be electrically separated doped and to ensure the operation of the Graetz bridge and to adapt the impedance between the external environment and the antenna, deposited above the first metallic layer (A1002);

[0148] - a fourth metallic layer (A1014), which serves as an antenna element, deposited at above the fourth p-doped semiconductor layer (A1007), the eighth n-doped semiconductor layer (A1012), and the insulating layer (A1013).

[0149] The device is dimensioned from at least one dimensioning parameter such as an operating wavelength, said at least dimensioning parameter being chosen from a group comprising the dimensions of the materials of the device.

[0150] According to a fourth embodiment (Figure C), the device (A1000) comprises:

[0151] - a substrate (A1001), which serves as a support;

[0152] - a first metallic layer (A1002), which serves as an antenna element, deposited on the top of substrate (A1001);

[0153] - a first p-doped semiconductor layer (A1003), which serves as a barrier potential, deposited above the first metallic layer (A1002);

[0154] - a second semiconductor layer (A1004), which serves as an insulator, deposited on- above the first p-doped semiconductor layer (A1003);

[0155] - a second metallic (superconducting) layer (A1005), which serves as a collector, deposited above the second semiconductor layer (A1004);

[0156] - a third semiconductor layer (A1006), which serves as an insulator, deposited on- above the second metallic (superconducting) layer (A1005);

[0157] - a fourth p-doped semiconductor layer (A1007), which serves as a barrier potential, deposited above the third semiconductor layer (A1006);

[0158] - a fifth n-doped semiconductor layer (A1008), which serves as a barrier potential, deposited above the first metallic layer (A1002);

[0159] - a sixth semiconductor layer (A1009), which serves as an insulator, deposited on- above the fifth n-doped semiconductor layer (A1008);

[0160] - a third metallic (superconducting) layer (A1010), which serves as a collector, deposited above the sixth semiconductor layer (A1009);

[0161] - a seventh semiconductor layer (A1011), which serves as an insulator, deposited on- above the third metallic (superconducting) layer (A1010);

[0162] - an eighth n-doped semiconductor layer (A 1012), which serves as a barrier potential, deposited above the seventh semiconductor layer (A1011);

[0163] - an insulating layer (A1013), which allows the layers to be electrically separated doped and to ensure the operation of the Graetz bridge and to adapt the impedance between the external environment and the antenna, deposited above the first metallic layer (A1002);

[0164] - a fourth metallic layer (A1014), which serves as an antenna element, deposited at above the fourth p-doped semiconductor layer (A1007), the eighth n-doped semiconductor layer (A1012), and the insulating layer (A1013).

[0165] The device is dimensioned from at least one dimensioning parameter such as an operating wavelength, said at least dimensioning parameter being chosen from a group comprising the dimensions of the materials of the device.

[0166] Figure D is a schematic cross-sectional view according to one embodiment of the device.

[0167] Figure E shows an antenna array which can comprise n basic A1000 elements.

[0168] - an A1001 silicon sub stratum;

[0169] - a first metallic layer A1002 made of silver (Ag) deposited on top silicon substrate A1001;

[0170]

[0171] - a final metallic layer A1014 formed of silver (Ag) arranged periodically dically with a periodicity P of 100 nm, in a square lattice.

[0172] Figure F is a schematic diagram of an antenna connected to a Graetz bridge, according to one embodiment of the device and on which the direction of the current to supply a load is indicated.

[0173] Figure G is a diagram representing a 2D mapping of the electromagnetic field centered in a plane normal to the axis, according to certain embodiments of the device.

[0174] Figure H is a diagram representing the dispersion curve of the plasmon gap, according to certain embodiments of the device.

[0175] Figure I is a diagram representing the evolution of the total absorption of an element of the antenna as a function of the wavelength of incidence (X) and the angle of incidence (0), according to one embodiment of the device.

[0176] Figure J shows the results of the numerical simulation of the current generated for three visible wavelengths (650 nm, 700 nm, 750 nm), at a temperature of 300 K, for an electric field of 10 mV, in a 2 nm long Metal-Insulator-Metal junction, with an insulator having a dielectric constant of 3, according to one embodiment of the device. Regarding solar radiation, the average power received at ground level is approximately 1000 W / m² (which allows us to estimate the magnitude of the electric field E at approximately 1 mV / pm). The theoretical power obtained by simulation without a superconductor is slightly higher than that obtained for the first commercially available photovoltaic cells, namely 80 W / m².

[0177] Advantageously, the device allows:

[0178] - to obtain an optimized and more efficient design than that of the latest known state of the art

[0179] - to use the two alternations of the sinusoidal current wave that propagate to the antenna surface at one or more operating wavelengths generated by an incident electromagnetic wave;

[0180] - to adapt the impedance between the external environment and the antenna;

[0181] - to obtain a direct current that can be collected by a conductive material or superconductor to power a load;

[0182] - to exploit the frequency range from 1 THz to 800 THz;

[0183] - to obtain a yield superior to that of the latest known state of the art.

[0184] The present device has been described with reference to various embodiments. In the To the extent possible, one or more elements, components, constituents, structures, modules of the described embodiments may be combined, separated, interchanged, rearranged with one or more other elements, components, constituents, structures, or modules of the embodiments without departing from the scope of the disclosed invention. The present device is not limited by the description of the various embodiments. Those skilled in the art may derive other implementation methods from the technical solutions of this device. Manufacturing process of the invention:

[0185] The following description of certain embodiments of the device will be made with reference to the fabrication of a rectangular layered structure using a silicon substrate, but without being limited to it.

[0186] In general, for the areas defined as n and p, it is recommended to use lithography, and the regions are doped using, for example, an ion implantation of indium or bismuth, respectively, at 1 x 1020 atoms / cm3. Damage to the implants can be reduced by means of rapid thermal annealing.

[0187] The manufacturing process is simple and comprises the following basic steps:

[0188] In the first step, in one embodiment of the device, at least one The operating wavelength can be defined as a sizing parameter for the device to convert the incident electromagnetic wave into electrical energy.

[0189] In the second step, in one embodiment of the device, the silicon (Si) substrate and the central portion serving as insulation between the junctions can be wet-cleaned in an acetone solution followed by nitrogen spray drying or centrifugal drying. The substrate can also be plasma-cleaned in argon or oxygen to remove any organic impurities that may be present on the substrate surface.

[0190] In the third step, in one embodiment of the device, a physical vapor deposition (PVD) of a silver layer can be carried out in an ultra-high vacuum environment.

[0191] In the fourth step, in one embodiment of the device, the doped layers can be deposited.

[0192] In the fifth step, in one embodiment of the device, a coating by centrifugation can be carried out.

[0193] In the sixth step, in one embodiment of the device, a lithographic configuration can be carried out or a physical vapor deposition (PVD) can be performed in an ultra-high vacuum environment. At this step, the silver layer deposition can be replaced by the deposition of superconducting material.

[0194] In the seventh step, in one embodiment of the device, the doped layers can be deposited.

[0195] In the eighth step, in one embodiment of the device, the semi-layers Drivers can be dropped off.

[0196] In the ninth step, in one embodiment of the device, a layer of silver may be deposited.

[0197] In some embodiments of the device, the first metallic layer and the last metallic layer can be coated using a suitable technique such as, for example, physical vapor deposition (PVD), magneton sputtering, ion beam and electron beam evaporation.

Claims

Claims

1. Device (A1000), made of different materials and in such a way that from incident sinusoidal electromagnetic waves collected in the frequency range of 1 THz to 800 THz, the generated currents pass through a Graetz bridge made of 4 diodes arranged in such a way that two alternations of the wave of the generated currents are used to produce a direct current which can be collected by a conductive or superconductive material to power a load, and comprising: - a substrate (A1001), which serves as a support; - a first metal layer (A 1002), which serves as an antenna strand, deposited on top of the substrate (A1001); - a first p-doped semiconductor layer (A1003), which serves as a potential barrier, deposited above the first metal layer (A 1002); - a second semiconductor layer (A 1004), which serves as an insulator, deposited above the first p-doped semiconductor layer (A1003); - a second metal layer (A1005), which serves as a collector, deposited above the second semiconductor layer (A1004); - a third semiconductor layer (A1006), which serves as an insulator, deposited above the second metal layer (A1005); - a fourth p-doped semiconductor layer (A1007), which serves as a potential barrier, deposited above the third semiconductor layer (A 1006); - a fifth n-doped semiconductor layer (A1008), which serves as a potential barrier, deposited above the first metal layer (A 1002); - a sixth semiconductor layer (A 1009), which serves as an insulator, deposited above the fifth n-doped semiconductor layer (A1008); - a third metal layer (A1010), which serves as a collector, deposited above the sixth semiconductor layer (A1009); - a seventh semiconductor layer (A1011), which serves as an insulator, deposited above the third metal layer (A1010); - an eighth n-doped semiconductor layer (A 1012), which serves as a potential barrier, deposited above the seventh semiconductor layer driver (A1011); - an insulating layer (A1013), which allows the doped layers to be electrically separated and ensures the operation of the Graetz bridge and adapts the impedance between the external environment and the antenna, deposited above the first metal layer (A 1002); - a fourth metal layer (A1014), which serves as an antenna strand, deposited above the fourth p-doped semiconductor layer (A1007), the eighth n-doped semiconductor layer (A1012), the insulating layer (A1013), the device is sized from at least one sizing parameter such as an operating wavelength, said at least sizing parameter being chosen from a group comprising the dimensions of the materials of the device.

2. Device (A 1000) according to claim 1, wherein the second metal layer (A1005), and / or the third metal layer (A1010), are formed of a superconducting material, such as TIBaCaCuO, or a compound of Neodymium or Dysprosium, to operate at terrestrial or space ambient temperature.

3. The device (A1000) of claim 1, wherein the first metal layer (A1002), or the second metal layer (A1005), or the third metal layer (A 1010), or the fourth metal layer (A 1014) may be formed of a material selected from a group comprising aluminum (Al), silver (Ag), gold (Au), tungsten (W) or copper (Cu).

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