Integrated electronic device for transmitting / receiving a radio frequency wave
The integrated electronic device addresses complexity and cost issues by using a waveguide and encapsulating material to guide radio frequency waves, achieving a compact and efficient structure for high-frequency wave transmission/reception.
Patent Information
- Application Number
- FR2022012675
- Authority / Receiving Office
- FR · FR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-12-02
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2042-12-02
AI Technical Summary
Existing integrated electronic devices for transmitting/receiving radio frequency waves above 50 GHz are complex to produce, require precise alignment of waveguides and antennas, have a large height, and high manufacturing costs.
An integrated electronic device with a waveguide that guides radio frequency waves through an encapsulating material, using MIS technology to form a compact structure with a patch antenna system and encapsulating material, allowing for easier alignment and reduced height.
The solution results in a more compact, simpler, and cost-effective device capable of transmitting/receiving radio frequency waves above 50 GHz, with improved thermal dissipation and manufacturing efficiency.
Smart Images
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Abstract
Description
Title of the invention: Integrated electronic device for the transmission / reception of a radio frequency wave
[0001] Embodiments and implementations relate to integrated electronic devices capable of transmitting / receiving a radio frequency wave or signal, having for example a frequency greater than 50 GHz, for example 63 GHz or even more.
[0002] Such devices can be applied to the field of 5G and used for example but not limited to the automotive field, in particular within radars embedded in motor vehicles.
[0003] Currently such devices comprise an electronic chip whose front face is connected to a rear face of a laminated substrate, the chip being further coated in a layer of resin.
[0004] The front face of the laminated substrate has a patch antenna and is connected to a rear face of a printed circuit board.
[0005] A first waveguide is formed in the printed circuit board opposite the antenna and a second waveguide, aligned with the first, is brought and fixed on the front face of the printed circuit board.
[0006] In some cases a radiator is fixed to the back face of the resin layer to facilitate heat dissipation of the device during its operation.
[0007] Such a device structure is complex to produce, particularly in terms of alignment of the waveguides and the antenna, has a relatively large height and has a significant manufacturing cost.
[0008] There is therefore a need to propose a device aimed at remedying the disadvantages mentioned above.
[0009] According to one embodiment, a more compact and simpler to manufacture integrated device is proposed.
[0010] According to one aspect, an integrated electronic device is proposed, comprising -a waveguide having a first input / output for receiving / delivering a radio frequency wave, having for example a frequency greater than 50 GHz, and configured to guide this radio frequency wave from the first input / output to a second input / output or from the second input / output to the first input / output, -an electronic chip having a front face electrically connected to a metal layer of a support substrate which includes a patch antenna system, said chip being surrounded by an electrically insulating encapsulating material disposed between the patch antenna system and the first input / output of the waveguide which is at least in contact with said coating material, -the electronic chip being configured to cooperate electrically with the patch antenna module so as to cause said radio frequency wave to be emitted by the patch antenna system towards the first input / output through the encapsulation material or to process an electrical signal from the patch antenna system and resulting from the reception by the patch antenna system of the radio frequency wave delivered by the first input / output through the encapsulation material.
[0011] The thickness of the encapsulation material through which the radio frequency wave is intended to circulate is advantageously chosen according to the frequency of the radio frequency wave.
[0012] According to a variant of this aspect, the waveguide is an element fixed at least to said encapsulation material, for example by means of an adhesive.
[0013] According to one embodiment of this aspect: -The encapsulating material forms a layer having a top surface on which is fixed a first metallic part of the waveguide including the first inlet / outlet, -the electronic chip has a back face located in the same plane as the top face of the coating layer, and -the waveguide has a second metallic part fixed to the back side of the chip.
[0014] The waveguide therefore also provides a thermal dissipation function here.
[0015] According to one embodiment of this variant: -The substrate support is a laminate substrate comprising a stack of several metal layers separated by dielectric layers; the chip is connected to the metal layer, called metal layer 1, closest to the encapsulation material, and -The patch antenna system includes an antenna element located on metal level 1 opposite the first input / output of the waveguide and electrically connected to the chip by a metal trace.
[0016] According to another variant of this aspect, the integrated device is entirely manufactured using MIS technology: "Molded Integrated Substrate" according to terminology well known to those skilled in the art.
[0017] Thus, according to such a variant: -the support substrate is of the molded integrated substrate type (MIS type substrate: "Molded Integrated Substrate") comprising a stack of metal levels separated by dielectric layers of the molding resin type, the stack comprising a top metal level 1 to which the electronic chip is connected, -The patch antenna system includes an antenna element located at the level of metal 1 opposite the first input / output of the waveguide and electrically connected to the chip by a metallic trace, -the encapsulation material is also of the molding resin type (the molding resin may have a different composition than the substrate support, and is typically adapted for radio frequency wave transmission) and encapsulates the electronic chip except for its rear face opposite its front face, and -the waveguide comprises a first metallic part including the first inlet / outlet and in contact with the encapsulation material, a second metallic part in contact with the rear face of the chip, and an internal volume containing a dielectric material also of the molding resin type (which may be identical to that forming the encapsulation material).
[0018] The use of MIS technology makes it possible to make the integrated device even more compact and to easily adapt, if necessary, the composition of the different molding resins according to their location in the device.
[0019] As indicated above, regardless of the variant, the device can be adapted for the transmission / reception of radio frequency waves having a frequency greater than 50 GHz, for example equal to 63GHz or 77 GHz.
[0020] According to another aspect, a method for manufacturing an integrated electronic device is proposed, comprising: -the formation of a support substrate comprising a stack of metal layers separated by dielectric layers and a patch antenna system, -an electrical connection of the front face of an electronic chip to a metal layer of the substrate, and an electrical connection between the chip and the patch antenna system, -the formation of an electrically insulating encapsulating material surrounding the electronic chip, -a waveguide formation having a first input / output to receive / deliver a radio frequency wave from / to the patch antenna system via the encapsulation material disposed between the patch antenna system and the first input / output of the waveguide, the waveguide being configured to guide this radio frequency wave from the first input / output or a second input / output to the second input / output or the first input / output.
[0021] The thickness of the encapsulation material through which the radio frequency wave is intended to circulate is advantageously chosen according to the frequency of the radio frequency wave.
[0022] A frequency greater than or equal to 50 GHz can be chosen.
[0023] According to a variant of this other aspect, the formation of the waveguide includes fixing this waveguide at least on said encapsulation material.
[0024] According to one embodiment of this variant: -the chip has a back side opposite to the front side, -The formation of the coating material includes the formation of a layer of this material having a top face located in the same plane as the back face of the chip, and -the formation of the waveguide includes fixing on the top face of the coating material layer, of a first metallic part of the waveguide including the first inlet / outlet, and fixing on the back face of the chip of a second metallic part of the waveguide.
[0025] According to one embodiment of this variant: -The support substrate is a layered substrate, and the chip is connected to the metal layer, called metal layer 1, closest to the encapsulation material. -The patch antenna system includes an antenna element located on metal level 1 opposite the first input / output of the waveguide and this antenna element is electrically connected to the chip by a metal trace.
[0026] According to another variant of this other aspect, the formation of the support substrate, the formation of the encapsulating material surrounding the chip, and the formation of the waveguide include the use of an integrated molded substrate (MIS) manufacturing technology comprising - stages of metal growth on layers of molding resin type, -steps involving coating the metal layers thus formed with other layers such as molding resins, -thinning steps of these other layers, such as molding resins and -one or more possible renewals of at least some of these steps.
[0027] According to one embodiment: -The formation of the support substrate includes the formation of a stack of metal layers separated by dielectric layers of the molding resin type, the stack comprising a top metal layer 1 to which the front face of the electronic chip is connected, -The patch antenna system includes an antenna element located on metal level 1 opposite the first input / output of the waveguide, and this antenna element is electrically connected to the chip via a metal trace. -The formation of the encapsulation material involves surrounding the electronic chip with a material also of the molding resin type, with the exception of the rear face of the chip opposite its front face, and -The waveguide formation involves the formation of a first metallic part including the second inlet / outlet and in contact with the encapsulation material, a second metallic part in contact with the back face of the chip, and a formation at within an internal volume of the waveguide of a dielectric material also of the molding resin type.
[0028] According to another aspect, an integrated device is proposed obtained by the process according to one or the other of the variants mentioned above.
[0029] Other advantages and features of the invention will become apparent upon examination of the detailed description of embodiments and implementations, which are by no means limiting, and the accompanying drawings in which:
[0030] [Fig.1]
[0031] [Fig.2]
[0032] [Fig.3]
[0033] [Fig.4]
[0034] [Fig.5]
[0035] [Fig.6]
[0036] [Fig.7]
[0037] [Fig.8]
[0038] [Fig.9], and
[0039] [Fig. 10]
[0040] schematically illustrate methods of implementation and realization of the invention.
[0041] In [Fig.1], the reference DIS designates an integrated electronic device intended to emit or receive a radio frequency electromagnetic wave (RFM) having a frequency typically greater than 50GHz, for example equal to 63GHz or 77GHz.
[0042] The DIS device comprises a waveguide 1, an electronic chip 2 and a support substrate 3.
[0043] This support substrate 3 is here a laminated substrate (“laminate substrate”) of classic structure and well known to those skilled in the art.
[0044] More specifically, this support substrate 3 comprises a stack of several metal levels (only two levels M1 and M2 are shown here for simplification purposes) separated by dielectric layers 30.
[0045] The metal levels comprise metallic tracks, for example copper, and the dielectric layers comprise, for example, an epoxy resin with possibly glass fibers.
[0046] It should also be noted that the dielectric layer 31 of the support substrate 3, which covers the metal level Ml, is a thinner dielectric layer than the dielectric layers 30 and is commonly referred to by those skilled in the art under the Anglo-Saxon term "solder mask".
[0047] The DIS device also includes a patch antenna system, according to a term well known to those skilled in the art, or planar antenna, comprising a antenna element 50 located at metal level Ml which is the upper metal level closest to the top face of substrate 1, also referred to as "metal level 1".
[0048] As illustrated schematically in [Fig. 2], this antenna element 50 is here a circular annular element. However, it could also be of any other shape, for example a rectangular annular element. It is not necessarily annular and could, for example, be a solid element of any shape.
[0049] This antenna element 50 is electrically connected to the chip 2 via a metallic track 500 located at the metal level Ml.
[0050] The metal level M2 may include a ground plane for the patch antenna system.
[0051] The chip 2 is mounted upside down on the metal level ML
[0052] In other words, the front face 20 of the chip 2 is here connected to metal tracks of the metal level Ml by metal connecting balls 23 and the chip 2 as well as the connecting balls 23 are embedded in an encapsulation material 4, for example a molding resin.
[0053] In the embodiment illustrated in [Fig. 1], the molding resin 4 forms a layer surrounding the electronic chip 2, leaving the rear face 21 of this chip 2 exposed. The resin layer 4 has a top face 410 located here in the same plane as the rear face 21 of the chip.
[0054] The waveguide 1 comprises a lower metallic part 11, for example in the form of a disc. This lower part comprises a first part 111 resting on the upper face 410 of the resin layer 4 and a second part 112 resting on the rear face 21 of the chip 2.
[0055] The waveguide therefore also provides a heat dissipation function due in particular to the contact between the second metallic part 112 with the rear face of the chip.
[0056] The waveguide 1 also includes an external metallic part 13 comprising a cylindrical vertical wall 131 and an upper wall, for example in the shape of a disc, 132.
[0057] The lower wall 11 and upper wall 132 could, alternatively, be rectangular.
[0058] The vertical wall 131 also rests on the coating layer 4.
[0059] The waveguide 1 finally comprises in this example a central vertical part 12 connected to the second part 112 and having a free end located in the opening provided by the upper wall 132.
[0060] The annular volume 14 of the waveguide, delimited by the vertical wall 131 and the lower part 11 of the waveguide, is here filled with air but could be filled with another dielectric material, for example identical to the dielectric material 150 contained in volume 15 delimited by the vertical wall 131, the upper wall 132, the lower wall 11 and the central vertical wall 12.
[0061] By way of example, this dielectric material 150 can be a molding resin, air or Teflon for example.
[0062] The volume 16 of the waveguide, delimited by the opening of the upper wall 132 and the end of the vertical wall 12, is also here filled with air.
[0063] The opening of the waveguide delimited by the lower part 11 and the lower part of the vertical wall 131 forms a first input / output interface ESI while the opening delimited by the upper wall 132 and the end of the vertical wall 12 forms a second input / output ES2.
[0064] Thus, the waveguide 1 is configured to guide the radio frequency electromagnetic wave OND between the first input / output ESI and the second input / output ES2 and vice versa.
[0065] More specifically, in operation, when processing means of chip 2 (not shown here) transmit an electrical signal to the antenna element 50, the latter radiates and transmits the radio frequency electromagnetic wave which passes through the coating layer 4, enters the waveguide through the first input / output ESI, is guided in the waveguide 1 and exits through the second input / output ES2.
[0066] Conversely, when the OND wave is received by the second input / output ES2, it is guided in the waveguide 1 to exit through the first input / output ESI then passes through the encapsulation 2 and is received by the antenna element 50 which then transmits an electrical signal corresponding to the processing means of the chip 2.
[0067] A person skilled in the art will know how to choose the composition of the coating resin 4 so that it can easily allow the passage of the electromagnetic wave OND.
[0068] By way of non-limiting example, one may choose for example an epoxy resin type coating resin containing silica inclusions (“fillers” in English) integrated into the mass of the epoxy matrix, for example marketed by the Japanese company Sumitomo.
[0069] Furthermore, the thickness EP of the coating resin layer 4 is advantageously chosen according to the frequency of the electromagnetic wave OND.
[0070] A person skilled in the art will be able to adjust this EP thickness according to the chosen frequency.
[0071] As an indication, the EP thickness can be in the order of 300 to 400 micrometers for a wave frequency of 77 GHz.
[0072] It can be on the order of 550 microns for a frequency of 63 GHz.
[0073] The lower the frequency of the wave, the greater this thickness EP will be.
[0074] The waveguide 1 can be of any shape in terms of cross-section (circular or rectangular) tangential) and there is not necessarily the same shape between the antenna element 50 and the section of the waveguide 1 even if the waveguide, glued to the substrate 3 is aligned opposite the antenna element 50.
[0075] Furthermore, the second input / output interface ES2 can be extended by a connector or another waveguide or another antenna element in another waveguide.
[0076] Furthermore, although in the example illustrated in [Fig.1], the waveguide has vertical and horizontal parts, it is quite possible to have only one verticality, i.e. a guide which will radiate along an axis perpendicular to the antenna element 50 in continuity with this antenna element.
[0077] Reference is now made more particularly to figures 3 to 6 to describe a method of implementing a manufacturing process for a device according to the invention, in particular allowing the device of [Fig. 1] to be obtained.
[0078] As illustrated in [Fig.3], the substrate support 3 is formed first.
[0079] Such a formation is well known in itself by a person skilled in the art.
[0080] In the present case, or only two levels of metallization M1 and M2, by For example, in copper, the following are shown for simplification purposes: first, the lower dielectric layer is formed in epoxy resin, to which glass fibers may be added, then the M2 metallization level is formed.
[0081] Next, the dielectric layer covering the metallization level M2 is formed, then the metallization level M1 is formed, including the formation of the antenna element 50.
[0082] In a conventional and well-known manner, the metal levels M1 and M2 can be fully laminated onto the underlying dielectric layer and then etched to obtain the tracks for these levels and the antenna element. Alternatively, the tracks and the antenna element could be obtained, for example, by electrolytic copper growth.
[0083] The metallization level Ml is then partially covered by the dielectric layer 31 (“solder mask”) so as to form a cavity CV in which, as illustrated in [Fig.4], the chip 2 is positioned upside down with its front face 20 directed towards the metallization level Ml.
[0084] The connecting balls 23 are welded onto the metal tracks of the metal level Ml.
[0085] Then, as illustrated in [Fig. 5], the electronic chip 2 and the connecting balls 23 are coated in a conventional and well-known manner with the coating resin 4. Once the molding resin has solidified, it is thinned, for example by mechanochemical polishing, to form the resin layer 4 which surrounds chip 2 while leaving the rear face 21 of this chip 2 exposed.
[0086] Then, as illustrated in [Fig.6], the waveguide 1, which is a discrete component manufactured separately, is provided and in a step ST6, the waveguide 1 is glued onto the encapsulating resin layer 4 and onto the back face of the chip 2. This gluing is carried out using a conventional glue, for example a thermally conductive glue.
[0087] Reference is now made more particularly to [Fig.7] to describe an integrated device DIS1 for the transmission / reception of an electromagnetic wave OND, according to a variant of the invention.
[0088] As will be explained in more detail below, the DIS1 device differs from the DIS device of [Fig.1] in particular in that the formation of the support substrate, the formation of the encapsulation material surrounding the chip and the formation of the waveguide include the use of an integrated molded substrate (MIS) type manufacturing technology.
[0089] The elements of the DIS1 device, illustrated in [Fig.7], having structures and / or functions analogous to those of the elements of the DIS device illustrated in [Fig.1], bear the same references as these elements illustrated in [Fig.1], and will not all be described with reference to this [Fig.7].
[0090] The differences between [Fig.7] and [Fig.1] are now described.
[0091] The support substrate 3A of the DIS1 device is here a support substrate of the integrated molded substrate (MIS) type comprising a stack of metal levels M1, M2 (again only two metal levels are shown for simplification purposes) separated by dielectric layers 300 of the molding resin type.
[0092] The stack of metal levels includes a top metal level M1, called metal level 1, comprising the antenna element 50, and to which the electronic chip 2 is connected via the connecting balls 23.
[0093] Here again, the patch antenna system comprises the antenna element 50 located on the metal level 1 Ml opposite the first ESI input / output of the waveguide, electrically isolated by parts 400 of molding resin, and is electrically connected to the chip by a metal track.
[0094] The encapsulating material 40 is also of the molding resin type. However, although it is also of the molding resin type, the molding resin 40 may have a different composition from the molding resin forming the dielectric layers 300. Indeed, this molding resin 40 is particularly suitable for the transmission of electromagnetic waves.
[0095] Here again, the encapsulation material 40, of the molding resin type, encapsulates the electronic chip 20 and the connecting balls 23 with the exception of the rear face 21.
[0096] The molding resin 40 can, for example, be identical to the resin 4 used in the DIS device of the [Fig.l].
[0097] Moreover, as with the DIS device of [Fig.1], the thickness EP of the coating resin layer 40 is advantageously chosen according to the frequency of the electromagnetic wave OND.
[0098] The waveguide 10 again includes the first metallic part 111 including the first ESI input / output in contact with the encapsulation material 40 and the second metallic part 112 in contact with the rear face 21 of the chip so as to facilitate the heat dissipation of the chip during its operation.
[0099] Furthermore, the internal volume of the waveguide contains a dielectric material also of the molding resin type which can also be material 40.
[0100] This is particularly advantageous because in this case there is no discontinuity between the encapsulating material 40 surrounding the chip 2 and the dielectric material 40 located inside the waveguide 10.
[0101] We now refer more particularly to figures 8 to 10 to describe an implementation method of a variant of the process allowing in particular the obtaining of the DIS 1 device of [Fig.7].
[0102] As indicated above, the formation of the support substrate 3A, the formation of the encapsulation material 40 surrounding the chip, and the formation of the waveguide 10 of the DIS 1 device involve the use of an integrated molded substrate (MIS) manufacturing technology comprising: - stages of metal growth on layers of molding resin type, - stages of coating the metal layers thus formed with other Molding resin-type layers, which may have identical or different compositions - thinning steps of these other layers of the molding resin type, and - one or more possible renewals of at least some of these steps.
[0103] Generally speaking, the metal growth steps can be done by electrolytic or (possibly autocatalytic) copper deposition (“plating”).
[0104] With regard to a molding resin, it can first be prepared as a viscous material with compositional elements chosen according to the function of the resin. Then, a preliminary layer of resin is deposited, which can be done, for example, by injecting the viscous resin at UPC with a transfer pressure of 8 MPa and a pressure on the part to be coated of 350 kN.
[0105] This heating leads to solidification of the resin, and this solidification is completed by placing the resin in an oven at 175°C, for example, for 2 hours. The result is then the desired molding resin.
[0106] The thinning of the resin layer can be achieved, for example, by mechanochemical polishing.
[0107] As illustrated more particularly in [Fig.9], the fabrication of the device first involves the formation of the support substrate 3A in an ST90 step.
[0108] This formation of the support substrate 3A first involves an electrolytic growth of metal on a temporary support in order to form contacts for an electrical connection of the future support substrate 3A to the outside.
[0109] Then we proceed to cover it with resin, and to thin the resin to resume the contacts.
[0110] These steps are repeated, as indicated above, to form the successive via and metal levels as well as the dielectric layers enclosing the via levels and separating the metal levels.
[0111] Next, the metal level M2 is grown on the lower resin layer 300, and then the resin layer 300 is formed on the metal level M2.
[0112] Next, the level of metal Ml is increased on the underlying resin layer 300.
[0113] Then, the metal level Ml is covered with molding resin which is then thinned to form the molding resin parts 400 surrounding the antenna element 50 ([Fig.8]) and uncover the metal level Ml.
[0114] In a step ST91, the chip 2 is reversed and connected to tracks of the metal level M1, including the track connected to the antenna element 50.
[0115] Then, in step ST92, the chip 2 is coated with molding resin which is then thinned to form the coating material 40 ([Fig.8]) and expose the rear face 21 of the chip 2.
[0116] In a step ST93, a level of metal MT1 ([Fig.8]) is then grown so as to form parts 131 A, 111 and 112 of the waveguide.
[0117] Then this level of metal MT1 thus formed is covered with resin (step ST94) which is thinned to form part 40A ([Fig.8]) of the molding resin and uncover the level of metal MT1.
[0118] In step ST95 ([Fig.10]) a level of MT2 metal is then grown to form parts 13IB and 12A of the waveguide ([Fig.8]).
[0119] Then, again, in a step ST96, the MT2 metal level is coated with molding resin which is thinned to form the 40B parts of the waveguide dielectric material and expose the MT2 metal level.
[0120] In step ST97, a level of MT3 metal is grown so as to form parts 132 and 12B of the waveguide.
[0121] Then, the MT3 metal level is coated with resin which is thinned to form the 40C region of the waveguide dielectric resin and expose the MT3 metal level.
[0122] The temporary support mentioned above is then removed.
Claims
Demands
1. An integrated electronic device comprising - a waveguide (1; 10) having a first input / output (ESI) for receiving / delivering a radio frequency wave (NDW) and configured to guide this radio frequency wave from the first input / output to a second input / output (ES2) or from the second input / output (ES2) to the first input / output (ESI), - an electronic chip (2) having a front face (20) electrically connected to a metal layer (M1) of a support substrate (3; 3A) which includes a patch antenna system, said chip being surrounded by an electrically insulating encapsulating material (4;40) disposed between the patch antenna system and the first input / output of the waveguide which is at least in contact with said encapsulation material, -the electronic chip (2) being configured to cooperate electrically with the patch antenna module so as to cause said radio frequency wave to be emitted by the patch antenna system towards the first input / output through the encapsulation material or to process an electrical signal from the patch antenna system resulting from the reception by the patch antenna system of the radio frequency wave delivered by the first input / output via the encapsulation material.;
2. Device according to claim 1, wherein the thickness (EP) of the encapsulation material through which the radio frequency wave is intended to flow is chosen as a function of the radio frequency.
3. Device according to any one of the preceding claims, wherein the waveguide (1) is an element fixed at least on said coating material.
4. Device according to claim 3, wherein -the coating material forms a layer (4) having an upper face (410) on which is fixed a first metallic part of the waveguide including the first input / output, -the electronic chip has a rear face (21) located in the same plane as the upper face (410) of the coating layer, and -the waveguide comprises a second metallic part (112) fixed on the rear face of the chip.
5. Device according to any one of the preceding claims, in which -the support substrate is a layered substrate (3) comprising a stack of several metal levels separated by dielectric layers, the chip is connected on the metal level, called metal level 1, closest to the encapsulation material, and -the patch antenna system comprises an antenna element (50) located on metal level 1 (M1) opposite the first input / output of the waveguide and electrically connected to the chip by a metallic track (500).
6. A device according to claim 1 or 2, wherein: - the support substrate (3A) is of the type molded integrated substrate comprising a stack of metal levels separated by dielectric layers of the molding resin type (300), the stack comprising a top level called metal level 1 (M1) to which the electronic chip is connected; - the patch antenna system comprises an antenna element (50) located on the metal level 1 opposite the first inlet / outlet of the waveguide and electrically connected to the chip by a metal trace; - the encapsulation material (40) is also of the molding resin type and encapsulates the electronic chip except for its rear face opposite its front face; and - the waveguide (10) comprises a first metallic part including the first inlet / outlet and in contact with the encapsulation material, and a second metallic part in contact with the rear face of the chip.and an internal volume containing a dielectric material (40) also of the molding resin type.
7. Device according to any one of the preceding claims, adapted for the transmission / reception of radio frequency waves having a frequency greater than 50 GHz.
8. A method for manufacturing an integrated electronic device, comprising: - the formation of a support substrate (3; 3A) having a stack of metal levels separated by dielectric layers and a patch antenna system, - an electrical connection of a front face of an electronic chip (2) to a metal level (M1) of the support substrate, and an electrical connection between the chip and the patch antenna system, - the formation of an electrically insulating encapsulating material (4; 40) surrounding the electronic chip, -a waveguide formation (1; 10) having a first input / output for receiving / delivering a radio frequency wave from / to the patch antenna system via the encapsulating material disposed between the patch antenna system and the first input / output of the waveguide, the waveguide being configured to guide this radio frequency wave from the first input / output or a second input / output to the second input / output or the first input / output.
9. A method according to claim 8, wherein the thickness (EP) of the encapsulation material through which the radio frequency wave is intended to flow is chosen as a function of the frequency of the radio frequency wave.
10. A method according to claim 9, wherein a frequency greater than or equal to 50 GHz is chosen.
11. A method according to any one of claims 8 to 10, wherein the formation of the waveguide (1) comprises fixing this waveguide at least on said coating material.
12. A method according to claim 11, wherein -the chip has a rear face opposite the front face, -the formation of the coating material (4) comprises the formation of a layer of this material having a top face located in the same plane as the rear face of the chip, and -the formation of the waveguide(l) comprises an attachment on the top face of the coating material layer, of a first metallic part of the waveguide including the first inlet / outlet, and an attachment on the rear face of the chip of a second metallic part of the waveguide.
13. A method according to any one of claims 8 to 12, wherein - the support substrate (3) is a laminated substrate, and the chip is connected to the metal level, referred to as metal level 1, closest to the encapsulation material, - the patch antenna system comprises an antenna element located on the metal level 1 opposite the first input / output of the waveguide and this antenna element is electrically connected to the chip by a metal trace.
14. A method according to any one of claims 8 to 10, wherein the formation of the support substrate (3A), the formation of the encapsulating material (40) surrounding the chip, and the formation of the waveguide (10) comprise the use of a molded substrate manufacturing technology integrated comprising - metal growth stages on molding resin type layers, - stages of covering the metal layers thus formed with other molding resin type layers, - stages of thinning these other molding resin type layers and - one or more possible renewals of at least some of these stages.
15. A method according to claim 14, wherein - the formation of the support substrate (3A) comprises a formation of the stack of metal levels separated by dielectric layers of the molding resin type, the stack comprising a top metal level 1 to which the front face of the electronic chip is connected, - the patch antenna system comprises an antenna element located on the metal level 1 opposite the first inlet / outlet of the waveguide and this antenna element is electrically connected to the chip by a metal trace, - the formation of the encapsulating material (40) comprises surrounding the electronic chip with a material also of the molding resin type, except for the rear face of the chip opposite its front face, and - the formation of the waveguide (10) comprises a formation of a first metallic part including the second inlet / outlet and in contact with the encapsulating material,a second metallic part in contact with the rear face of the chip, and a formation within an internal volume of the waveguide of a dielectric material also of the molding resin type.
16. Integrated device obtained by the method according to any one of claims 8 to 13.
17. Integrated device obtained by the method according to one of claims 14 and 15.