Vertical power component

Abstract

Vertical Power Component This description relates to a vertical power component (300) formed in and on a semiconductor substrate (101) doped with a first type of conductivity and coated, on its upper face, with a semiconductor layer (103) doped with the first type of conductivity, the component (300) comprising: – an active region (100A); and – first and second groups (S1, S2) of first concentric field-limiting rings (GR) surrounding the active region (100A), each first ring (GR) comprising a first semiconductor region (105P) doped with a second type of conductivity, opposite to the first type of conductivity, extending vertically in the thickness of the semiconductor layer (103) from its upper face;and – a second field-limiting ring (LGR) interposed laterally between the first and second groups (S1, S2) of first field-limiting rings (GR), the second ring (LGR) comprising a second semiconducting region (305P) doped with the second type of conductivity extending vertically through the thickness of the semiconducting layer (103) from its upper face, in which the second semiconducting region (305P) has a width at least three times greater than that of the widest first semiconducting region (105P). Figure for the abstract: Fig. 3;

Description

Title of the invention: Vertical power component Technical field

[0001] The present description relates generally to electronic devices. The present description relates more particularly to vertical power components. Prior art

[0002] Vertical power components have been proposed. Among these components, JBS (Junction-Barrier Schottky) diodes have been proposed in particular. JBS diodes have advantages similar to those of conventional Schottky diodes, in particular a low on-state voltage drop, a low threshold voltage and low switching losses. JBS diodes also have, compared to conventional Schottky diodes, a lower leakage current and improved resistance in the event of current overload.

[0003] However, existing vertical power components suffer from various drawbacks. In particular, electric arcs can appear inside these components when they are subjected to significant reverse voltages. Electric arcs cause irreversible damage to the vertical power components where they form, resulting in malfunctions rendering the components at least partially inoperative. Summary of the invention

[0004] There is a need to overcome all or part of the disadvantages of existing vertical power components. In particular, there is a need to avoid the formation of electric arcs in existing vertical power components.

[0005] For this, one embodiment provides a vertical power component formed in and on a semiconductor substrate doped with a first conductivity type and coated, on its upper face, with a semiconductor layer doped with the first conductivity type, the component comprising: - an active region; and - first and second groups of first concentric field-limiting rings surrounding the active region, each first ring comprising a first semiconductor region doped with a second conductivity type, opposite to the first conductivity type, extending vertically in the thickness of the semiconductor layer from its upper face; and - a second field limiting ring interposed laterally between the first and second groups of first field limiting rings, the second ring comprising a second doped semiconductor region of the second conductivity type extending vertically in the thickness of the semiconductor layer from its upper face, wherein the second semiconductor region has a width at least three times greater than that of the widest first semiconductor region.

[0006] According to one embodiment, the second ring makes it possible to reduce by at least half, preferably by at least two-thirds, an electric field present in the vicinity of an interface between a first insulating region, arranged on and in contact with the upper face of the semiconductor layer, and a second insulating region, located in a peripheral region of the vertical power component.

[0007] According to one embodiment, the second ring makes it possible to reduce by at least half, preferably by at least two-thirds, an electric field present in the vicinity of an interface between an insulating region, arranged on and in contact with the upper face of the semiconductor layer, and a molding resin of a housing of the vertical power component.

[0008] According to one embodiment, the first and second groups comprise identical numbers of first rings.

[0009] According to one embodiment, the first and second field limiting rings are floating guard rings.

[0010] According to one embodiment, the component further comprises at least one third group of first rings, and at least one third field limiting ring interposed between the second group of first rings and said at least one third group of first rings.

[0011] According to one embodiment, the semiconductor layer has a doping level strictly lower than that of the semiconductor substrate.

[0012] According to one embodiment, the component comprises: - a first conduction electrode formed in the active region and comprising a conductive region located on the semiconductor layer; and - a second conduction electrode arranged on the side of a face of the semiconductor substrate opposite the semiconductor layer.

[0013] According to one embodiment, the semiconductor substrate is made of silicon or silicon carbide.

[0014] According to one embodiment, the first type of conductivity is N and the second type of conductivity is P.

[0015] According to one embodiment, the component is a JBS diode. Brief description of the drawings

[0016] These and other features and advantages will be set forth in detail in the following description of particular embodiments made without limitation in relation to the attached figures among which:

[0017] [Fig.lA] and [Fig.lB] are schematic and partial views, respectively from above and in section along plane BB of [Fig.lA], illustrating an example of a vertical power component;

[0018] [Fig.2] is a detailed, schematic and partial view of a peripheral region of the vertical power component of Figures 1A and 1B;

[0019] [Fig. 3] is a detailed, schematic and partial view of a peripheral region of a vertical power component according to one embodiment; and

[0020] [Fig.4] is a graph illustrating variations in electric field and electrostatic potential in the peripheral region of the vertical power component of [Fig.3]. Description of the embodiments

[0021] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0022] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been shown and are detailed. In particular, the various applications implementing vertical power components have not been detailed, the described embodiments being compatible with all or most applications likely to benefit from one or more vertical power components.

[0023] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected by means of one or more other elements.

[0024] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0025] Unless otherwise specified, the expressions “about”, “approximately”, “substantially”, and “of the order of” mean to within 10%, preferably to within 5%.

[0026] In the following description, the qualifiers “insulator” and “conductor” mean respectively, unless otherwise specified, electrically insulating and electrically conductive.

[0027] [Fig.lA] is a schematic and partial top view illustrating an example of a vertical power component 100. [Fig.lB] is a sectional view, along plane BB of [Fig.lA], of the vertical power component 100.

[0028] In the illustrated example, the vertical power component 100 is a JBS (Junction-Barrier Schottky) diode comprising an active region 100A, corresponding for example to a region likely to be traversed by a power signal during operation of the component. In this example, the active region 100A of the vertical power component 100 is bordered by a peripheral region 100P not intended to be traversed by the power signal during operation of the component. The active region 100A is for example located substantially at the center of the vertical power component 100. The peripheral region 100P of the vertical power component 100 surrounds the active region 100A and has for example, in top view, an annular shape. The peripheral region 100P is interposed laterally between the active region 100A and the edge of the vertical power component 100. [Fig.[1A] illustrates an example in which the vertical component of power 100 has, in top view, a generally rectangular shape. This example is however not limiting, the vertical component of power 100 being able, as a variant, to have any general shape, for example square, oval, circular, etc.

[0029] In the example shown, the vertical power component 100 is formed in and on a semiconductor substrate 101. The substrate 101 is for example a wafer or a piece of wafer made of a semiconductor material, for example silicon (Si) or silicon carbide (SiC). The semiconductor substrate 101 is doped with a first conductivity type, for example the N type, and has for example a doping level of between 1*1017 and 5*1020 at. / cm3 (N+ doping, in the case where the first conductivity type is the N type). By way of example, the semiconductor substrate 101 has a thickness greater than or equal to approximately 50 μm, the thickness of the semiconductor substrate 101 being for example chosen so as to ensure the mechanical strength of the structure of the vertical power component 100.

[0030] The upper face, in the orientation of [Fig.lB], of the semiconductor substrate 101 is coated with a semiconductor layer 103. The semiconductor layer 103 is for example made of the same material as the substrate 101, for example silicon or silicon carbide. By way of example, the semiconductor layer 103 is an epitaxial layer, that is to say formed by epitaxial growth on the upper face of the semiconductor substrate 101. The semiconductor layer 103 is for example doped with the first conductivity type (the N type, in this example). The semiconductor layer- conductive 103 has for example a doping level strictly lower than that of the semiconductor substrate 101, for example between 1*1013 and 5*1017 at. / cm3. The semiconductor layer 103 has for example a doping level and a thickness chosen according to a voltage resistance to be achieved by the vertical power component 100.

[0031] In the example shown, the vertical power component 100 further comprises semiconductor regions 105A, 1051 and 105P extending vertically in the thickness of the semiconductor layer 103 from its face opposite the semiconductor substrate 101 (the upper face of the layer 103, in the orientation of [Fig. 1B]). The semiconductor regions 105A, 1051 and 105P have a thickness strictly less than that of the semiconductor layer 103. In the example illustrated, the semiconductor regions 105A are part of the active region 100A, and the semiconductor regions 1051 and 105P are part of the peripheral region 100P of the vertical power component 100, the region 1051 being interposed laterally between the regions 105A and 105P. The semiconductor regions 105A, 1051 and 105P are doped with a second type of conductivity (the P type, in this example) opposite to the first type of conductivity.For example, the semiconductor regions 105A, 1051 and 105P have a maximum doping level of between 1*1017 and 5*1020 at. / cm3 (P+ doping, in the case where the second type of conductivity is the P type). The semiconductor regions 105A, 1051 and 105P are for example formed by an ion implantation step, on the side of the face of the semiconductor layer 103 opposite the semiconductor substrate 101, followed by an annealing step. In [Fig.lA], the semiconductor regions 105A and 105P have not been detailed and only certain 105P semiconductor regions (in this case, three 105P semiconductor regions) have been represented in order not to overload the drawing. Furthermore, the numbers of semiconductor regions 105A and 105P may be different from those shown in Figures 1A and 1B.For example, the number of 105P semiconductor regions is between five and three hundred, for example between ten and fifty, for example equal to approximately fifteen.

[0032] In the illustrated example, the semiconductor regions 105P and 1051 have, in top view, concentric annular shapes, each semiconductor region 105P, 1051 surrounding all the semiconductor regions 105A. For example, each semiconductor region 105P, 1051 has a rectangular-shaped periphery with rounded corners. The semiconductor regions 105A form, for example, in top view, strips parallel to each other and extending laterally along a direction orthogonal to the plane BB. As a variant, the semiconductor regions 105A may form, in top view, a grid comprising first strips parallel to each other and orthogonal to the plane BB, and second strips parallel to each other and orthogonal to the plane BB, or thogonal to the first bands, hexagonal shapes, elliptical or round shapes, discontinuous bands, etc.

[0033] In the example shown, the vertical power component 100 further comprises a conductive region 107 arranged on and in contact with a portion of the upper face of the semiconductor layer 103 forming part of the active region 100A of the component 100 and with the upper faces of the semiconductor regions 105A and 1051. The conductive region 107 defines for example the active region 100A of the component 100. The conductive region 107 is for example made of a metal stack comprising for example aluminum (Al). In this case, the region 107 forms, with the semiconductor layer 103, a Schottky type contact (metal-semiconductor contact).

[0034] In the example illustrated, an insulating region 109 is arranged on and in contact with a portion of the upper face of the semiconductor layer 103 forming part of the peripheral region 100P of the vertical power component 100, with the upper faces of the semiconductor regions 105P and with a portion of the semiconductor region 1051. The insulating region 109 has, for example, in top view, an annular shape surrounding the active region 100A of the component 100. In the example shown, the conductive region 107 extends laterally on and in contact with a portion of the upper face of the insulating region 109. The insulating region 109 acts, for example, as a passivation layer of the vertical power component 100. By way of example, the insulating region 109 is made of an oxide, for example silicon dioxide.

[0035] In the illustrated example, the vertical power component 100 further comprises another insulating region 113 located in the peripheral region 100P of the component 100 and arranged on and in contact with a portion of the upper face of the conductive region 107 and with the upper face of the insulating region 109. The insulating region 113 has, for example, in top view, an annular shape surrounding the active region 100A of the component 100. The insulating region 113 forms, for example, a passivation layer of the vertical power component 100. By way of example, the insulating region 113 is made of an organic material, for example a polymer, for example polybutylene oxide (PBO) or polyimide.

[0036] Alternatively, the insulating region 113 may be omitted, the insulating region 109 being, in the case of a molded case assembly, in contact with a molding resin.

[0037] Although this has not been illustrated in Figures 1A and 1B, the vertical power component 100 further comprises a conductive layer arranged on the side of a face of the semiconductor substrate 101 opposite the semiconductor layer 103 (the lower face of the semiconductor substrate 101, in the orientation of [Fig. 1B]). This conductive layer is for example part of another conduction electrode, for example a cathode, of the vertical power component 100. The conductive layer coating the lower face of the substrate 101 is for example made of the same material as the conductive region 107, for example a metal (for example nickel) or a metal alloy.

[0038] Furthermore, although not shown, the vertical power component 100 may be surrounded by a housing, for example a housing made of a polymer resin molded around the structure of the vertical power component 100.

[0039] [Fig. 2] is a detailed, schematic and partial view of the peripheral region 100P of the vertical power component 100 of Figures 1A and 1B. [Fig. 2] corresponds more precisely to a detailed and sectional view of the region 150 delimited by a dotted frame in [Fig. 1B].

[0040] In the example shown in [Fig. 2], the semiconductor regions 105P have identical dimensions, apart from manufacturing dispersions, and are spaced substantially regularly. This example is not, however, limiting, the semiconductor regions 105P being able, as a variant, to have different dimensions and / or spacings. In this case, the semiconductor regions 105P have, for example, identical widths and a variable pitch, or variable widths and a constant pitch. The semiconductor regions 105P of the peripheral region 100P of the vertical power component 100 make it possible to spread the space charge zone of the main junction, formed at the interface between the semiconductor layer 103 and the conductive region 1051, over a distance adapted to ensure the voltage resistance of the component 100.

[0041] In the illustrated example, the semiconductor regions 105P are respectively part of field limiting rings (GR), for example floating guard rings (FGR), each GR ring comprising a single semiconductor region 105P. For example, the field limiting rings GR have spacings and widths dimensioned so as to make it possible to obtain a substantially constant electric field in the vicinity of the interface between the insulating regions 109 and 113 when the vertical power component 100 is subjected to a nominal voltage applied between its conduction electrodes. For example, the nominal voltage is, in absolute value, greater than or equal to 350 V, for example between 600 V and 15 kV.

[0042] In the example shown, the field limiting rings GR of the vertical power component 100 have been split into three sets S1, S2 and S3, or groups, of rings GR each comprising substantially equal numbers of rings GR, therefore of semiconductor regions 105P. In the example shown, the group S1 comprises the rings GR whose semiconductor regions 105P are the most close to the active region 100A of the vertical power component 100, the group S3 comprises the GR rings whose 105P semiconductor regions are the furthest from the active region 100A, and the group S2 comprises the GR rings whose 105P semiconductor regions are interposed laterally between those of the group SI and those of the group S3. In [Fig.2], an axis parallel to the upper face of the semiconductor substrate 101 and to the plane BB of [Fig.1A] and oriented from the active region 100A towards the peripheral region 100P of the vertical power component 100, makes it possible to identify a distance (D) separating each GR ring, or each 105P semiconductor region, from the active region 100A.

[0043] A disadvantage of the vertical power component 100 is that delamination or detachment phenomena may occur, in particular between the housing and the vertical power component 100, or between the insulating region 113 and the insulating region 109. In the case where the vertical power component 100 does not have the insulating region 113, the delamination phenomena may occur between the insulating region 109 and the molding resin of the housing. The delamination phenomena lead to the appearance of a gaseous layer, for example a layer of air, in which electric arcs may form, for example when the vertical power component is subjected to a high reverse voltage. These electric arcs cause irreversible damage to the vertical power component 100, thus leading to malfunctions rendering the vertical power component 100 at least partially inoperative.

[0044] [Fig. 3] is a detailed, schematic and partial view of a peripheral region of a vertical power component 300 according to one embodiment. In the example illustrated, the vertical power component 300 is a JBS diode. The vertical power component 300 of [Fig. 3] comprises elements in common with the vertical power component 100 of FIGS. 1A, 1B and 2. These common elements will not be detailed again below. The vertical power component 300 of [Fig. 3] differs from the vertical power component 100 of FIGS. 1A, 1B and 2 in that the component 300 comprises a peripheral region 300P analogous to the peripheral region 100P of the component 100 but comprising, in addition to the groups S1, S2 and S3 of field limiting rings GR comprising the semiconductor regions 105P, other field limiting rings (LGR), for example floating guard rings, each comprising a semiconductor region 305P.

[0045] The semiconductor regions 105P and 305P are for example concentric and each semiconductor region 305P is interposed laterally between two groups of semiconductor regions 105P. In other words, each field limiting ring LGR is interposed laterally between two groups (S1 and S2, or S2 and S3) of field limiting rings GR. In the example shown, the field limiting rings LGR are interposed laterally between two groups (S1 and S2, or S2 and S3) of field limiting rings GR. LGR field mitation forms two spaces, or intervals, G1 and G2 separating respectively the SI group from the S2 group, and the S2 group from the S3 group.

[0046] In the example illustrated in [Fig. 3], each semiconductor region 305P extends vertically in the thickness of the semiconductor layer 103 from its face opposite the semiconductor substrate 101 (the upper face of the layer 103, in the orientation of [Fig. 3]). The semiconductor regions 305P have a thickness strictly less than that of the semiconductor layer 103, for example a thickness substantially equal to that of the semiconductor regions 105P. In the example illustrated, the semiconductor regions 305P are part of the peripheral region 300P of the vertical power component 300. The semiconductor regions 305P are doped with the second conductivity type (the P type, in this example). For example, 305P semiconductor regions have a doping level between 1*1017 and 5*1020 at. / cm3 (P+ doping, in the case where the second conductivity type is the P type), for example a doping level substantially equal to that of the 105P semiconductor regions. The 305P semiconductor regions are for example formed by an ion implantation step, on the side of the face of the semiconductor layer 103 opposite the semiconductor substrate 101, followed by an annealing step. For example, the 105P and 305P semiconductor regions are formed simultaneously.

[0047] According to one embodiment, each of the 305P semiconductor regions has a width strictly greater than that of each of the 105P semiconductor regions. In other words, the LGR field limiting rings have a width strictly greater than that of the GR field limiting rings. For example, the width of each 305P semiconductor region is at least three times greater than that of the widest 105P semiconductor region. In the example shown in [Fig. 3], the 305P semiconductor regions have identical dimensions, apart from manufacturing variations.

[0048] By way of example, the number of field limiting rings LGR, or the number of groups of field limiting rings GR, is chosen as a function of a voltage withstand objective of the vertical power component 300. Furthermore, the number of field limiting rings GR in each group SI, S2, S3 is for example chosen as a function of a minimum voltage for forming an electric arc in the event of delamination, or detachment, in the vertical power component 300. This minimum voltage is for example given by Paschen's law applied to the vertical power component 300. The geometry, the number and the distribution of the field limiting rings GR are defined so that the electric field close to the interface between the insulating regions 109 and 113 is substantially constant on the groups SI, S2 and S3.

[0049] An advantage of the vertical power component 300 is that the presence of the LGR rings comprising the semiconductor regions 305P makes it possible to reduce the intensity of the electric field present in the vicinity of the interface between the insulating regions 109 and 113. This advantageously makes it possible to avoid, or limit, the risks of formation of an electric arc in the event of delamination, or detachment, in the vertical power component 300.

[0050] [Fig.4] is a graph 400 illustrating, by curves 401 and 403, variations in electric field (E), expressed in volts per centimeter (V.cm1), and in electrostatic potential (V), expressed in volts (V), respectively, in the peripheral region 300P of the vertical power component 300 of [Fig.3]. For comparison, the graph 400 further illustrates, by dotted curves 405 and 407, variations of the electric field E and the electrostatic potential V, respectively, in the peripheral region 100P of the vertical power component 100. The graph 400 more precisely translates variations of the electric field E in the insulating region 109 of the vertical power component 100 or 300, for example in the vicinity of the interface with the insulating region 113, and of the electrostatic potential V in the semiconductor material, in the vicinity of the interface with the insulating region 109. These variations are represented as a function of the distance D.

[0051] In the example shown, curve 401 indicates that the electric field E is substantially constant, and equal to approximately 2*105 V.cm1, directly above each group S1, S2, S3 of rings GR, and that the electric field E decreases significantly, for example by a factor of two or three, in each space G1, G2 located directly above a ring LGR. In other words, the field limiting rings LGR make it possible to reduce the electric field E by half, preferably by at least two-thirds, compared to the constant field zones. For comparison, curve 405 indicates that the electric field E is substantially constant, and equal to approximately 2*105 V.cm1, along the distance axis D in the case of the vertical power component 100.

[0052] In the example illustrated in [Fig.4], the curve 403 indicates that the electrostatic potential V increases by a value VI between the two ends of the group SI of rings GR, by a value V2 between the two ends of the group S2 of rings GR and by a value V3 between the two ends of the group S3 of rings GR. Each of the values ​​VI, V2 and V3 is for example strictly lower than the minimum voltage from which an electric arc is likely to occur in the vertical power component 300 in the event of delamination or detachment. By way of example, each value VI, V2, V3 is less than 280 V, for example of the order of 250 V, the sum of the values ​​VI, V2 and V3 being for example equal to approximately 750 V. Furthermore, in the example shown, the electrostatic potential V is substantially constant in the spaces Gl and G2, the curve 403 comprising plateaus corresponding to the position of the rings LGR.For comparison, curve 407 is devoid of such . trays.

[0053] As illustrated by graph 400 of [Fig.4], an advantage of the vertical power component 300 lies in the fact that the presence of the field limiting rings LGR, interposed laterally between the groups S1, S2 and S3 of field limiting rings GR, makes it possible to create zones of low electric field preventing the formation, in the event of delamination or detachment, of electric arcs with deleterious effects on the operation of the component 300.

[0054] Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these various embodiments and variants could be combined, and other variants will become apparent to those skilled in the art. In particular, the described embodiments are not limited to the case in which the vertical power component 300 is a JBS diode, but apply more generally to any type of vertical power component, for example a bipolar diode, a MOS (Metal-Oxide-Semiconductor) transistor, a thyristor, etc. comprising field-limiting rings, for example to any type of vertical power component likely to be subjected to voltages greater than 350 V between its conduction electrodes. Adapting the described embodiments to these components is within the scope of those skilled in the art based on the above indications.

[0055] Finally, the practical implementation of the described embodiments and variants is within the reach of the person skilled in the art from the functional indications given above. In particular, the person skilled in the art is able to adapt the number of groups of field limiting rings GR, the number of field limiting rings GR in each group of field limiting rings GR, and the lateral dimensions of each field limiting ring LGR depending on the application. Furthermore, the embodiments are not limited to the examples of materials and dimensions described.

Claims

Claims

1. Vertical power component (300) formed in and on a semiconductor substrate (101) doped with a first conductivity type and coated, on its upper face, with a semiconductor layer (103) doped with the first conductivity type, the component (300) comprising: - an active region (100A); and - first and second groups (SI, S2) of first concentric field-limiting rings (GR) surrounding the active region (100A), each first ring (GR) comprising a first semiconductor region (105P) doped with a second conductivity type, opposite to the first conductivity type, extending vertically in the thickness of the semiconductor layer (103) from its upper face;and - a second field-limiting ring (LGR) interposed laterally between the first and second groups (SI, S2) of first field-limiting rings (GR), the second ring (LGR) comprising a second semiconductor region (305P) doped with the second conductivity type extending vertically in the thickness of the semiconductor layer (103) from its upper face, in which the second semiconductor region (305P) has a width at least three times greater than that of the widest first semiconductor region (105P).;

2. Component (300) according to claim 1, in which the second ring (LGR) makes it possible to reduce at least by half, preferably by at least two-thirds, an electric field (E) present in the vicinity of an interface between a first insulating region (109), arranged on and in contact with the upper face of the semiconductor layer (103), and a second insulating region (113), located in a peripheral region (100P) of the vertical power component (300).

3. Component (300) according to claim 1, in which the second ring (LGR) makes it possible to reduce at least by half, preferably by at least two-thirds, an electric field (E) present in the vicinity of an interface between an insulating region (109), arranged on and in contact with the upper face of the semiconductor layer (103), and a molding resin of a housing of the vertical power component (300).

4. Component (300) according to claim 1, 2 or 3, wherein the first and second groups (S1, S2) comprise identical numbers of first rings (GR).

5. A component (300) according to any one of claims 1 to 4, wherein the first and second field limiting rings (GR, LGR) are floating guard rings.

6. A component (300) according to any one of claims 1 to 5, further comprising at least one third group (S3) of first rings (GR), and at least one third field-limiting ring (LGR) interposed between the second group (S2) of first rings and said at least one third group (S3) of first rings.

7. Component (300) according to any one of claims 1 to 6, in which the semiconductor layer (103) has a doping level strictly lower than that of the semiconductor substrate (101).

8. Component (300) according to any one of claims 1 to 7, comprising: - a first conduction electrode formed in the active region (100A) and comprising a conductive region (107) located on the semiconductor layer (103); and - a second conduction electrode arranged on the side of a face of the semiconductor substrate (101) opposite the semiconductor layer.

9. A component (300) according to any one of claims 1 to 8, wherein the semiconductor substrate (101) is made of silicon or silicon carbide.

10. A component (300) according to any one of claims 1 to 9, wherein the first conductivity type is N and the second conductivity type is P.

11. A component (300) according to any one of claims 1 to 10, wherein the component is a JBS diode.

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