Quarter-wave multi-cavity broadband thermal detector

Abstract

The invention relates to a thermal detector with a suspended absorbing membrane, which comprises at least two absorbers (31, 32). The second absorber (32) is adapted to absorb electromagnetic radiation in a spectral sub-band Δλ2 of a predefined spectral band Δλtot, centered on a wavelength λc2. In addition, it is spaced from a reflector (12) of a value h2 equal to λc2 / 4neq2 so as to form therewith a quarter-wave cavity C2 for the wavelength λc2, the spectral sub-band Δλ2 being centered on the wavelength λc2 which is equal to λc1 / 2 to within plus or minus 2 µm. Furthermore, the first and second absorbers (31, 32) have total surfaces such that a surface ratio S2 / S1 is between 0.5 and 3. Figure for the abstract: Fig. 2A

Description

Title of the invention: Wideband thermal detector with multiple quarter-wave cavities Technical field

[0001] The field of the invention is that of devices for detecting electromagnetic radiation, for example infrared or terahertz, comprising at least one thermal detector with an absorbent membrane suspended above the reading substrate. The invention applies in particular to the fields of infrared imaging, thermography, gas detection, among others. STATE OF THE PRIOR ART

[0002] Electromagnetic radiation detection devices may comprise a matrix of thermal detectors each comprising a membrane capable of absorbing the electromagnetic radiation to be detected and containing a thermometer transducer such as a thermistor material. To ensure thermal insulation of the thermometer transducers from the reading substrate, the absorbing membranes are usually suspended above the reading substrate by anchoring pillars, and are thermally insulated therefrom by holding arms. These anchoring pillars and holding arms also have an electrical function by connecting the absorbing membranes to the reading circuit generally arranged in the substrate. The absorbing membrane comprises an absorber, for example a thin metal layer, adapted to absorb the electromagnetic radiation to be detected, which is thermally coupled with the thermometer transducer.

[0003] [Fig.l] is a perspective view of an example of a thermal detector 1 according to an example of the prior art, here adapted to absorb infrared radiation from the LWIR (Long Wavelength Infrared) spectral band whose central wavelength is between approximately 8pm and 12pm.

[0004] The thermal detector 1 comprises an absorbent membrane 20 suspended above a reading substrate 10 by anchoring pillars 2 and thermally insulated therefrom by holding and thermal insulation arms 3. These anchoring pillars 2 and thermal insulation arms 3 also have an electrical function by electrically connecting the absorbent membrane 20 to a reading circuit located in the reading substrate 10.

[0005] The membrane 20 here comprises an absorber 30 adapted to absorb the electromagnetic radiation to be detected and a thermometer transducer in thermal contact with the absorber. The thermometer transducer may be a material having an electrical resistance which varies with its heating (thermistor). It may be in particular of amorphous silicon or of a vanadium oxide. The absorbing membrane 20 is spaced vertically from a reflector 12 by a distance determined so as to form a quarter-wave interference cavity optimizing the absorption by the absorbing membrane 20 of the electromagnetic radiation to be detected. Such an absorber is then generally called a Salisbury absorber.

[0006] Document WO2020 / 084242A1 describes two structural configurations of the absorbing membrane, which contains a Salisbury absorber similar to that of [Fig.l], i.e. a thin-film absorber located at a distance h equal to Xc / 4neq , where Xc is the central wavelength of the total detection spectral band AXtot (here 8-14pm) and where neq is an equivalent refractive index of the medium associated with the quarter-wave cavity. The absorber generally has a surface resistance close to the vacuum impedance Z0=377Q.

[0007] In a first configuration, the polarization electrodes provide a function of absorber of the light radiation in the detection spectral band AXtot. They are therefore spaced vertically from the reflector by a distance such that, taking into account the materials present in the quarter-wave cavity, the absorption is optimal for the central wavelength Xci (here around 1 Ipm) of the detection spectral band A / . tot (8-14pm).

[0008] In a second configuration, the polarization electrodes do not provide the absorber function. Also, a thin-film absorber is located on the thermometer transducer, perpendicular to the lateral spacing between the two polarization electrodes. Thus, the absorber does not vertically cover the latter. It is therefore spaced vertically from the reflector by a distance such that, taking into account the materials present in the quarter-wave cavity, the absorption is optimal for the central wavelength Xci of the detection spectral band AXtot.

[0009] There is, however, a need to broaden the detection spectral band AXtot, in particular to smaller wavelengths, while maintaining a uniformly high absorption rate (for example at least equal to 70% throughout the detection spectral band). However, it is known that the absorption spectrum of such an absorber is limited by the presence of an antiresonance at a wavelength Xc / 2neq, thus limiting the absorption to low wavelengths and not allowing the detection spectral band AXtot to be broadened.

[0010] Note that document US2010 / 0148067A1 describes another configuration of an absorbing membrane, where a first absorber is formed by the polarization electrodes and is located above the thermometer transducer. It has an interdigitated comb shape, and is spaced from the reflector to form a quarter-wave cavity optimizing absorption in a spectral band AXtot centered on the wavelength of lOpm.

[0011] The absorbing membrane comprises a second absorber, located below the absorber, and intended to absorb light radiation in the same spectral band AXtot which would not have been absorbed by the upper absorber. The objective here is to improve the absorbance of the membrane. However, the detection spectral band is not broadened. Statement of the invention

[0012] The invention aims to remedy at least in part the drawbacks of the prior art, and more particularly to propose a thermal detector having a broadband absorption spectrum while maintaining uniformly high absorption over the entire detection spectral band.

[0013] For this, the object of the invention is a thermal detector of electromagnetic radiation in a predefined spectral band AXtot, comprising: • a reading substrate, comprising: a reading circuit; a reflector adapted to reflect the electromagnetic radiation; • an absorbent membrane, suspended above the reading substrate, thermally insulated from the reading substrate, comprising a thermometer transducer electrically connected to the reading circuit, and comprising: • a first thin-film absorber, with a total surface area Sb thermally coupled to the thermometer transducer, and adapted to absorb the electromagnetic radiation in a spectral sub-band AXi of the spectral band A^, centered on a wavelength Xcb and is spaced from the reflector by a value hi equal to Xci / 4neqi so as to form therewith a first quarter-wave cavity C i for the wavelength Xci, neqi being a refractive index of the medium associated with the first quarter-wave cavity Ci; • at least one second thin-layer absorber, with a total surface area S2, thermally coupled to the thermometer transducer, arranged in the absorbent membrane so as not to be covered by the first absorber.

[0014] According to the invention, the second absorber is adapted to absorb the electromagnetic radiation in a spectral sub-band A / .2 of the spectral band AXtot, centered on a wavelength Xc2, and is spaced from the reflector by a value h2 equal to Xc2 / 4neq2 so as to form with the latter a second quarter-wave cavity C2 for the wavelength Xc2, neq2 being a refractive index of the medium associated with the second quarter-wave cavity C2, the spectral sub-band A / .2 being centered on the wavelength Xc2 equal to Xci / 2 to within plus or minus 2pm.

[0015] In addition, the first and second absorbers have total surfaces such that that a surface ratio S2 / Si is between 0.5 and 3.

[0016] Some preferred but non-limiting aspects of this thermal detector are as follows.

[0017] The first absorber may rest on the thermometer transducer.

[0018] The second absorber can extend into the absorbing membrane without being covered by the thermometer transducer.

[0019] The second absorber can be formed by parts of a metal layer, forming, on the one hand, polarization tracks at the level of holding arms ensuring the holding and thermal insulation of the absorbent membrane, and on the other hand, polarization electrodes coming into contact with the thermometer transducer.

[0020] The metal layer may extend planarly in the holding arms and in the absorbent membrane.

[0021] The thermal detector may comprise a third absorber adapted to absorb the electromagnetic radiation in a spectral sub-band AX3 of the spectral band AXtot, centered on a wavelength Xc3, and spaced from the reflector by a value h3 equal to Xc3 / 4neq3 so as to form with the latter a quarter-wave cavity C3 for a wavelength Xc3, neq3 being a refractive index of the medium associated with the quarter-wave cavity C3, the wavelength Xc3 being located between the wavelengths Xci and Xc2

[0022] The distance h3 can be equal to the distance h2, the third absorber being covered by the thermometer transducer.

[0023] The thermal detector may comprise at least one absorber adapted to absorb the electromagnetic radiation in a spectral sub-band AX4 of the spectral band AXtot, centered on a wavelength Xc4, and spaced from the reflector by a value h4 equal to Xc4 / 4neq4 so as to form therewith a quarter-wave cavity C4 for a wavelength Xc4, neq4 being a refractive index of the medium associated with the quarter-wave cavity C4. The absorber of the quarter-wave cavity C4 may be located in a flat part of the absorbent membrane forming a step relative to a main plane in which extends a metal layer forming polarization tracks located in holding arms and polarization electrodes in contact with the thermometer transducer.

[0024] The AXtot detection spectral band may include the LWIR spectral band ranging from 8 to 12 pm.

[0025] The thermal detector may have an absorption of at least 80% throughout the entire detection spectral band AXtot. Brief description of the drawings

[0026] Other aspects, aims, advantages and characteristics of the invention will become more apparent. upon reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made with reference to the appended drawings in which:

[0027] [Fig.l], already described, is a schematic and partial perspective view of a thermal detector according to an example of the prior art;

[0028] [Fig.2A] is a schematic and partial view, in cross-section, of a thermal detector according to one embodiment;

[0029] [Fig.2B] is a top view of the thermal detector of [Fig.2A];

[0030] [Fig.3A] schematically illustrates two Salisbury absorbers and a reflector of a thermal detector according to one embodiment;

[0031] [Fig.3B] illustrates examples of a total absorption spectrum of the thermal detector and absorption spectra of the absorbers of [Fig.3A], in the case of an S2 / Si surface ratio equal to 1;

[0032] [Fig.4A] illustrates examples of a total absorption spectrum atot(X) of the thermal detector and the absorption spectra cq(X) and a2(X) of the absorbers of [Fig.3A], in the case of a surface ratio S2 / Si equal to 0.5;

[0033] [Fig.4B] illustrates examples of a total absorption spectrum atot(X) of the thermal detector and the absorption spectra cq(X) and a2(X) of the absorbers of [Fig.3A], in the case of a surface ratio S2 / Si equal to 2

[0034] [Fig.5A] illustrates an example of the total absorption spectrum atot(X) of the thermal detector as a function of the surface ratio S2 / Si of the absorbers;

[0035] [Fig.5B] illustrates several total absorption spectra atot(X) of the thermal detector, for different values ​​of the surface ratio S2 / Si of the absorbers, from the example of [Fig.5A];

[0036] [Fig.6A] is a schematic and partial view, in cross-section, of a thermal detector according to one embodiment;

[0037] [Fig.6B] is a schematic and partial view, according to another cross-section, of the thermal detector of [Fig.6A];

[0038] [Fig.6C] is a top view of the thermal detector of [Fig.6A];

[0039] [Fig.7A] is a schematic and partial cross-sectional view of the detector thermal according to one embodiment;

[0040] [Fig.7B] is a top view of the thermal detector of [Fig.7A].

[0041] DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

[0042] In the figures and in the remainder of the description, the same references represent identical or similar elements. In addition, the different elements are not shown to scale so as to enhance the clarity of the figures. Furthermore, the different embodiments and variants are not mutually exclusive and may be combined with each other. Unless otherwise indicated, the terms "substantially", "approximately", "in the order of" mean to within 10%, and preferably to within 5%. Furthermore, the terms "between ... and ..." and equivalents mean that the limits are included, unless otherwise stated.

[0043] The invention relates to a thermal detector of electromagnetic radiation, for example infrared or terahertz, in a wide detection spectral band AXtot, with uniformly high absorption over the entire spectral band AXtot, i.e. the absorption spectrum atot(X) has a value at least equal to a predefined threshold value in the entire spectral band AXtot. By way of example, the detection spectral band AXtot covers at least the LWIR range (8-12pm) and extends in particular towards the shortest wavelengths.

[0044] The thermal detector may be part of a detector array of a detection device, where the thermal detectors are identical to each other and are arranged periodically. They each comprise an absorbing membrane suspended above the same reading substrate.

[0045] The absorbing membrane comprises at least two Salisbury absorbers thermally coupled to the same thermometer transducer (therefore heating of the absorbers is transmitted to the transducer), defining at least two quarter-wave cavities with the same reflector of the reading substrate. At least one of the quarter-wave cavities has a resonance wavelength equal to the anti-resonance wavelength of another quarter-wave cavity at plus or minus 2 pm.

[0046] In other words, as detailed below, the absorbing membrane is configured so that the first quarter-wave cavity Ci optimizes the absorption of the first absorber at a resonance wavelength Xcl (central wavelength of the absorption spectral band AXi of the first absorber). For this, the first absorber is spaced from the reflector by a vertical distance hi equal to Xcl / 4neql, where neql is the equivalent refractive index of the medium associated with the quarter-wave cavity Ci, namely the medium located perpendicular to the first absorber and the reflector, as well as the medium of the absorbing membrane located on and perpendicular to the first absorber.

[0047] In addition, the absorbing membrane is configured so that a second quarter-wave cavity C2 optimizes the absorption of a second absorber at a resonance wavelength Xc2 (central wavelength of the absorption band A / .2 of the second absorber). For this, the second absorber is spaced from the reflector by a vertical distance h2 equal to Xc2 / 4neq2, where neq2 is the equivalent refractive index of the medium associated with the quarter-wave cavity C2. The distance h2 and / or the refractive index neq2 are chosen so that the resonance wavelength Xc2 is equal to the antiresonance of the quarter-wave cavity Ci, i.e. to Xci / 2, to within plus or minus 2 pm: Xc2 = Xci / 2 ± 2 pm, or alternatively Xci / 2 - 2 pm < Xc2 < Xci / 2 + 2 pm. Thus, the detection spectral band AXtot of the thermal detector is therefore broadened to the extent that it extends over at least the two absorption spectral bands AXi and AX2.

[0048] Furthermore, so that the absorption spectrum atot(X) of the thermal detector has a uniformly high value over the entire detection spectral band AXtot, the surface area ratio S / Sj between the absorbers is between 0.5 and 3, where the surface area Si corresponds to the total surface area of ​​the absorber of rank i whose resonance wavelength is substantially equal (within ±2 pm) to the antiresonance wavelength of the absorber of rank j. Thus, the contribution of each absorber, in terms of spectral response, to the total absorption spectrum atot(X) is balanced, which ensures that the total absorption is uniformly high over the entire detection spectral band AXtot. The surface area S of an absorber is defined as being the total surface area of ​​the latter, then located at a constant distance h from the reflector, in the quarter-wave cavity considered.

[0049] [Fig.2A] is a schematic and partial view of a thermal detector 1 of electromagnetic radiation, here of infrared radiation, according to one embodiment, in cross-section along a section line AA (see [Fig.2B]). [Fig.2B] is a schematic and partial top view of the thermal detector 1 of [Fig.2A].

[0050] Here and for the remainder of the description, a three-dimensional direct reference XYZ is defined, where the XY plane is substantially parallel to the plane of a reading substrate 10 of the thermal detector 1, the Z axis being oriented in a direction substantially orthogonal to the XY plane of the reading substrate 10, in the direction of the absorbent membrane 20. Furthermore, the terms “lower” and “upper” are understood as relating to an increasing positioning when moving away from the reading substrate 10 in the +Z direction.

[0051] The reading substrate 10 is formed of a support substrate 11 containing the reading circuit (not shown) adapted to control and read the thermal detector 1. The reading circuit may be in the form of a CMOS integrated circuit. It thus comprises conductive portions which are flush with the upper face of the reading substrate 10, which is substantially planar. The conductive portions and the conductive vias may be made of copper, aluminum and / or tungsten, among others, for example by means of a damascene process in which trenches made in the inter-metal insulating layer are filled.

[0052] The thermal detector 1 comprises a reflector 12, which rests on or in the reading substrate 10. It is adapted to reflect the electromagnetic radiation to be detected in the direction of the absorbent membrane 20, and is preferably made of at least one metallic material. It can be covered by this protective layer, made of a material substantially inert to an etching agent used subsequently to remove the sacrificial layer(s) which make it possible to produce the suspended membrane 20 as well as an encapsulation structure (which defines a vacuum cavity in which the absorbent membrane 20 is located). The reflector 12 extends in the XY plane under the absorbent membrane 20, in particular under the absorbers located therein.

[0053] The thermal detector 1 comprises an absorbent membrane 20, suspended above the reading substrate 10 by anchoring pillars 2, and thermally insulated from the latter by holding and thermal insulation arms 3. The anchoring pillars 2 and holding arms 3 also provide an electrical connection function to the reading circuit contained in the reading substrate 10. The holding arms 3 may be formed from a stack of a lower insulating layer 21 (for example made of A12O3 or amorphous silicon), a conductive polarization track 22 (for example made of TiN or NiCr), and an upper insulating layer 23 (for example made of A12O3 or amorphous silicon).

[0054] The absorbent membrane 20 comprises a thermometer transducer 23, here formed by a thermistor layer, that is to say a layer made of a material whose electrical resistance varies as a function of its thermal heating, polarization electrodes, and at least two absorbers 31, 32 thermally coupled to the same thermometer transducer 23.

[0055] In this example, the absorbent membrane 20 comprises a lower insulating layer 21, for example made of a dielectric material such as alumina, an oxide and / or a silicon nitride, or even of a non-intentionally doped semiconductor material such as amorphous silicon. It may have a thickness for example between 5nm and 100nm, preferably between 15nm and 50nm.

[0056] Polarization electrodes rest on the lower insulating layer 21. They are made of an electrically conductive material, here of a metallic material such as for example TiN or NiCr, among others, with a thickness for example between 5 and 15 nm, preferably between 6 and 10 nm. As explained below, these polarization electrodes here form a so-called lower absorber 32 in a thin layer. However, as a variant, the lower absorber may be distinct from the polarization electrodes. The material and the thickness of the lower absorber 32 are preferably chosen so that its surface resistance is substantially equal to the impedance of the vacuum.

[0057] The lower absorber 32 is therefore formed of two parts 32.1 and 32.2 spatially distinct, which extend from the holding arms 3 to the edge of the thermometer transducer 23, to be able to electrically polarize it. In this example, each part of the lower absorber 32 extends in a C-shape so as to extend over a large part of the absorbing membrane 20. On the other hand, at the thermometer transducer 23, the two parts 31.1 and 31.2 are suf sufficiently spaced laterally in the XY plane so as not to come perpendicular to the upper absorber 32. The surface S2 of the lower absorber 32 corresponds to the sum of the surfaces of the two separate parts 32.1, 32.2. Each part of the lower absorber 32 extends here continuously and with a constant thickness. Alternatively, it can extend discontinuously and have a non-constant thickness.

[0058] The lower absorber 32 is located at a substantially constant distance h2 from the reflector 12, thus forming a quarter-wave cavity C2 of the resonance wavelength Xc2, with h2 = Xc2 / 4neq2. The wavelength Xc2 is a central wavelength of the spectral sub-band A / .2 of the spectral band AXtot. Here we denote neq2 the equivalent refractive index of the medium associated with the quarter-wave cavity C2, namely here the medium located vertically above the lower absorber 32, between the latter and the reflector 12, as well as the medium located on and vertically above the lower absorber 32. As detailed below, the distance h2 and / or the refractive index neq2 are chosen so that the wavelength Xc2 is equal, to within plus or minus 2 pm, to the antiresonance wavelength Xci / 2 of the quarter-wave cavity Ci.

[0059] The thermometer transducer 23 here extends over and into contact with the polarization electrodes and the lower insulating layer 21. This is a thermistor material with a thickness, for example, of the order of a few tens to hundreds of nanometers. It may be a material based on vanadium or titanium oxide, or amorphous silicon. Alternatively, it may also be a diode (pn or pin junction) or a field effect transistor with a metal-oxide-semiconductor structure (MOSFET), among others.

[0060] An upper protective layer 24 covers the thermometer transducer 23, here only on the upper face of the latter, but it can cover it entirely to ensure a function of protecting the thermometer transducer 23 against possible contamination or degradation during the steps of the manufacturing process. It can be made of an electrically insulating material, for example a dielectric material such as a silicon oxide, nitride or oxynitride, or even alumina, among others, with a thickness of a few tens of nanometers.

[0061] The absorbent membrane 20 comprises a second absorber 31, called the upper absorber, formed from a thin layer made of at least one material suitable for absorbing the electromagnetic radiation to be detected, for example a metallic material such as TiN or NiCr, among others, with a thickness for example between 5 and 15 nm, preferably between 6 and 10 nm. The upper absorber 31 is thermally coupled to the thermometer transducer 23. Here it rests on the upper protective layer 24, and does not extend opposite (vertically) the lower absorber 32, so as to avoid degrading the absorption of the electromagnetic radiation. genetic by one or other of the absorbers.

[0062] The material and thickness of the upper absorber 31 are preferably chosen so that its surface resistance is substantially equal to the impedance of the vacuum. Here, it extends continuously and with a constant thickness. Alternatively, it may extend discontinuously and have a non-constant thickness. The total surface area of ​​the upper absorber 31 is denoted by Si.

[0063] The upper absorber 31 is located at a substantially constant distance hi from the reflector 12, thus forming a quarter-wave cavity Ci of the resonance wavelength Xci, with hi = Xci / 4neqi. The wavelength Xci is a central wavelength of the spectral sub-band AXi of the spectral band AXtot. Here neqi denotes the equivalent refractive index of the medium associated with the quarter-wave cavity Cb, namely here the medium located vertically above the upper absorber 31, between the latter and the reflector 12, as well as the medium located on and vertically above the upper absorber 31.

[0064] According to the invention, the absorbing membrane 20 therefore comprises at least two Salisbury absorbers 31, 32 adapted to absorb the electromagnetic radiation in the detection spectral band AXtot. It is configured so that the resonance wavelength Xc2 associated with the quarter-wave cavity C2 is equal, to within plus or minus 2 pm, to the antiresonance wavelength Xci / 2 associated with the quarter-wave cavity Ci. This configuration can be obtained by adjusting one and / or the other of the distances hi and h2, as well as by adjusting one and / or the other of the equivalent refractive indices neql and neq2 (by the choice of materials and thicknesses).

[0065] Thus, the total absorption spectrum atot(X) of the thermal detector 1 corresponds to the sum of the absorption spectrum a^X) of the upper absorber 31 and the absorption spectrum a2(X) of the lower absorber 32. The detection spectral band AXtot is no longer limited by the antiresonance of the quarter-wave cavity Cb and it appears that it is also not limited by the antiresonance of the quarter-wave cavity C2 (as detailed later with reference to [Fig.3B]).

[0066] Furthermore, the surface ratio S2 / Si is between 0.5 and 3, and preferably between 0.8 and 2, and preferably equal to approximately 1. Thus, the contribution of each absorber 31, 32 to the total absorption spectrum atot(X) of the thermal detector 1 is balanced, which makes it possible to obtain a uniformly high absorption value atot, at least equal to a predefined threshold value atot>th, over the entire spectral band AXtot.

[0067] Note that the lower absorber 32, which here also forms the polarization electrodes, has a total surface area that is much larger than in the case of the prior art where the electrodes are narrow tracks and do not form a Salisbury absorber.

[0068] In order to illustrate the contribution of the absorbers 31, 32 to the total absorption spectrum atot(X) of the thermal detector 1, we now consider two absorbers 31, 32 and a reflector 12 as shown schematically in [Fig.3A]. Figures 3B, 4A and 4B illustrate examples of the total absorption spectrum atot(X) of the absorbing membrane 20 as well as those cq(X) and a2(X) of the upper absorber 31 and the lower absorber 32, in the case where the surface ratio S2 / Si is equal to approximately 1 ([Fig.3B]), equal to approximately 0.5 ([Fig.4A]) and equal to approximately 2 ([Fig.4B]).

[0069] In this example, the lower absorber 32 is made of TiN with a thickness of 8 nm, and extends in the XY plane in a square-shaped ring. It is spaced vertically from the reflector 12 by a distance h2 equal here to 1.5 pm. Furthermore, the upper absorber 31 is made of TiN with a thickness of 8 nm, and extends in the XY plane in a square shape. Its dimensions are here equal to those of the empty interior space of the lower absorber 32. It is spaced vertically from the reflector 12 by a distance hi=h2+ô equal here to 2.5 pm. Furthermore, the pixel pitch is here equal to 12 pm, and the fill factor ff (for fill factor in English), defined by the relation ff=(S2+Si) / p2 is equal to 80%.

[0070] The absorption spectra are obtained here by numerical resolution of Maxwell's equations by finite elements.

[0071] The absorption spectrum cq(X) of the upper absorber 31 has a maximum value around the resonance wavelength Xci equal here to approximately 13 pm, as well as a strong decrease at the antiresonance wavelength of approximately 5 pm. Furthermore, the absorption spectrum a2(X) of the lower absorber 32 has a maximum value around the resonance wavelength Xc2 equal here to approximately 6 pm, as well as a strong decrease at the antiresonance wavelength of approximately 3 pm. Also, it appears that the absorption spectrum atot(X) no longer has a strong decrease at the antiresonance wavelengths of 5 pm (absorption of approximately 60%) and 3 pm (absorption of approximately 40%).

[0072] Furthermore, the contribution of each absorber 31, 32 is homogeneous here, due to the surface ratio S2 / Si equal to approximately 1, so that the total absorption spectrum atot(X) is uniformly high over the entire detection spectral band AXtot. Thus, if the absorption threshold value is considered to be equal to 40%, the detection spectral band AXtot then ranges from 3 pm to more than 20 pm. If 60% is considered, it extends from 5 pm to more than 20 pm. And if 80% is considered, it extends from 6 to 15 pm. Thus, the detection spectral band AXtot is considerably broadened, and the total absorption spectrum atot(X) is uniformly high, i.e. at least equal to the threshold value over the entire spectral band AXtot.

[0073] Note here that it is advantageous for the maximum lateral dimensions of the absorbers 31, 32 to be less than or equal to the central wavelength of the detection spectral band AXtot. In this example, it is equal to approximately 11 pm for a spectral band AXtot of 6-15 pm (absorption threshold value of 80%). Here, the upper absorber 31 is in the form of a square with side a of 7.6 pm, and the lower absorber 32 is in the form of a square ring with a side length of 10.7 pm. Also, the lateral dimensions of the absorbers are smaller than the central wavelength of 11 pm.

[0074] It then appears that this configuration leads to maximizing the optical collection efficiency of the incident electromagnetic radiation. Indeed, the upper absorber 31, while its relative surface area is 40%, absorbs up to 65% around its resonance wavelength 13 pm. Similarly, the lower absorber 32, while its relative surface area is also 40%, absorbs up to 60% around its resonance wavelength 5 pm. The combination of the two absorbers 31, 32, which cover a total relative surface area of ​​80% of the surface area of ​​the detection pixel, makes it possible to absorb more than 80% of the incident radiation between 6 and 15 pm.

[0075] It is possible to modify the total absorption spectrum atot(X) of the thermal detector 1 by adjusting the contribution of each absorption spectrum cq(X) and a2(X) via the surface ratio S2 / Si.

[0076] In the case where the surface ratio S2 / Si is equal to 0.5 (see [Fig.4A]), the contribution of the lower absorber 32 is reduced in favor of that of the upper absorber 31. And in the case where the surface ratio S2 / Si is equal to 2 (see [Fig.4B]), the contribution of the lower absorber 32 is increased to the detriment of that of the upper absorber 31.

[0077] Thus, in the case where the threshold absorption value is equal to 60%, the absorption spectral band AXtot goes from 6 pm to more than 20 pm in the case where S2 / Si = 0.5 ([Fig.4A]) with a maximum absorption of 90% around 12 pm. On the other hand, it goes from 4 pm to 20 pm in the case where S2 / Si = 2 ([Fig.4B]) with a maximum absorption of 90% around 7-8 pm.

[0078] [Fig.5A] illustrates an example of a total absorption spectrum atot(X) as a function of the surface ratio S2 / Si in the case of the configuration of [Fig.3A], and [Fig.5B] illustrates the total absorption spectra atot(X) in the case where S2 / Si = 0.5, where S2 / Si = 3, and in the cases where S2 / Si is very small (S2 / Si: the upper absorber 31 completely fills the available surface) and where S2 / Si is very large (S2 / Si: the lower absorber 32 completely fills the available surface).

[0079] Concerning the total absorption spectrum atot(X) with very small S2 / Si, we find a peaked spectrum at the antiresonance wavelength of the quarter-wave cavity Ci, i.e. around 5 pm. Similarly, the total absorption spectrum atot(X) with very large S2 / Si, we find a peaked spectrum at the antiresonance wavelength of the quarter-wave cavity C2, i.e. around 3 pm. These absorption limitations are not found in the total absorption spectra atot(X) with S2 / Si = 0.5 and S2 / Si = 3.

[0080] [Fig.6A] and [Fig.6B] are schematic and partial views of a thermal detector 1 of electromagnetic radiation according to one embodiment, in cross-section respectively on the section lines AA and BB (see [Fig.6C]). [Fig.6C] is a top view of the thermal detector 1 of [Fig.6A] and 6B.

[0081] In this example, the absorbent membrane 20 comprises the same thermometer transducer 23 thermally coupled to more than two absorbers, here to three absorbers 31, 32, 33 forming three quarter-wave cavities Ci, C2, C3 distinct in terms of absorption spectral band.

[0082] The absorbent membrane 20 here comprises a lower insulating layer 21, a thin metal layer in two spatially distinct parts in the XY plane which form polarization electrodes as well as the second and third absorbers 32, 33, an upper insulating layer 22, the thermometer transducer 23 (here a layer of a thermistor material) which rests on the upper insulating layer and passes through it at the level of openings 22a to come into contact with the metal layer, an upper protective layer 24 which covers the thermometer transducer 23, and a thin metal layer which rests on the thermometer transducer 23 and forms the first absorber 31 (upper absorber).

[0083] The upper absorber 31 is located on the thermometer transducer 23, at the distance hi from the reflector 12. The quarter-wave cavity Ci makes it possible to optimize the absorption by the upper absorber 31 at the wavelength Xci of the spectral band AXi. Its medium comprises in particular the upper protective layer 24, the thermistor material 23 and the two insulating layers 22, 21. As shown in [Fig.6C], the upper absorber 31 extends over only a part of the surface of the thermometer transducer 23, here over approximately half of the surface thereof.

[0084] Furthermore, the metal layer, formed of two parts which are the polarization electrodes, forms a second absorber 32 (quarter-wave cavity C2) spaced by the distance h2 from the reflector 12. In this quarter-wave cavity C2, the second absorber 32 extends over the absorbent membrane 20 without being covered by the thermometer transducer 23. The absorption by this second absorber 32 takes place in a spectral sub-band AX2, centered on the wavelength Xc2. The medium associated with this quarter-wave cavity C2 here comprises in particular the two insulating layers 21, 22.

[0085] In the third quarter-wave cavity C3, the metal layer extends over the absorbent membrane 20 while being covered by the thermometer transducer 23 (but not covered by the first absorber). More precisely, the two parts 33.1 and 33.2 of the metal layer covered by the thermometer transducer 23 form the third absorber 33. This is spaced by the same distance h2 from the reflector 12 as the second absorber 32. The absorption by this third absorber 33 takes place in a spectral sub-band AX3 centered on the wavelength Xc3. The medium associated with this quarter-wave cavity C3 here comprises in particular the upper protective layer 24, the thermometer transducer 23 and the two insulating layers 22, 21.

[0086] Thus, the three quarter-wave cavities Cb C2 and C3 are dimensioned, in terms of height hi and h2 (here the distance h3 from the third absorber is equal to h2) and equivalent refractive index neqb neq2 and neq3 to obtain a wide detection spectral band AXtot while maintaining an absorption value atot uniformly above a reference value. Thus, the quarter-wave cavity C2 can be configured to absorb optimally at the antiresonance of the quarter-wave cavity Cb. The quarter-wave cavity C3 can be configured to absorb in a spectral band AX3 between AXi and AX2, for example by adjusting the thickness of such or such layer of the absorbing membrane 20 located in the quarter-wave cavity C3.

[0087] [Fig.7A] is a schematic and partial cross-sectional view of a thermal detector 1 of electromagnetic radiation according to one embodiment, in cross-section along the section line AA (see [Fig.7B]). [Fig.7B] is a top view of the thermal detector 1 of [Fig.7A].

[0088] In this example, the absorbent membrane 20 comprises the same thermometer transducer 23 thermally coupled to more than two absorbers, here to five absorbers 31, 32, 33, 34 and 35 forming five quarter-wave cavities distinct in terms of absorption spectral band.

[0089] The absorbent membrane 20 here comprises a lower insulating layer 21, a thin metallic layer in several spatially distinct parts in the XY plane which form polarization electrodes and several different absorbers, an upper insulating layer 22, the thermometer transducer 23 (here a layer of a thermistor material) which rests on the upper insulating layer and passes through it at the level of openings 22a to come into contact with the metallic layer. An upper protective layer 24 covers the thermometer transducer 23.

[0090] The different parts of the thin metal layer form the different absorbers 31 to 35 and define the quarter-wave cavities. In this example, there is no upper absorber resting on the thermometer transducer 23, but alternatively, such an upper absorber may be present (in which case there would be no absorber covered by the thermometer transducer 23).

[0091] Two central parts form the first absorber 31, spaced apart by a distance hi from the reflector 12. They are covered by the thermometer transducer 23, and define the quarter-wave cavity Ci of resonance wavelength Xcl in the spectral band AXp. The medium of refractive index neql comprises in particular the thermometer transducer 23 and the two insulating layers 21, 22.

[0092] A lateral part forms another absorber 35, spaced by the same distance hi from the reflector 12. It is not covered by the thermometer transducer 23, and it defines the quarter-wave cavity C5 of resonance wavelength Xc5 in the spectral band AX5. The medium of refractive index neq5 comprises in particular the two insulating layers 21, 22.

[0093] Three other lateral parts form different absorbers 32, 33, 34. They are spaced apart by the distance h2, h3 and h4 from the reflector 12, different from each other and by the value hb. They are not covered by the thermometer transducer 23, and they define quarter-wave cavities C2, C3 and C4 whose resonance wavelengths are respectively Xc2, Xc3, and Xc4. The refractive index media neq2neq3 and neq4 essentially comprise the two insulating layers.

[0094] Also, the absorbent membrane comprises different stages where the absorbers 32, 33, 34 are located. It therefore comprises flat parts where the absorbers 32, 33, 34 are distant from the reflector 12 by the respective distances h2, h3 and h4, connected to the main flat part where the thermometer transducer 23 is located by vertical (as shown) or inclined connecting parts. The flat parts where the absorbers 32, 33, 34 are located therefore form a step of the absorbent membrane 20 with respect to the main flat part.

[0095] Thus, the absorbing membrane 20 is configured, in terms of height hi to h5 and equivalent refractive index neqi to neq5, so as to obtain a broad detection spectral band AXtot while maintaining an absorption value atot uniformly above a reference value. Several quarter-wave cavities can be configured to optimally absorb at the antiresonance of other quarter-wave cavities. Other quarter-wave cavities can also be configured to absorb in a spectral band between those of other quarter-wave cavities.

[0096] Particular embodiments have just been described. Different variants and modifications will appear to those skilled in the art.

Claims

1. Claims Thermal detector (1), adapted to absorb electromagnetic radiation in a predefined spectral band AXtot, comprising: • a reading substrate (10), comprising: a reading circuit; and a reflector (12) adapted to reflect the electromagnetic radiation; • an absorbent membrane (20), suspended above the reading substrate (10), thermally insulated from the reading substrate (10), comprising a thermometer transducer (23) electrically connected to the reading circuit, and comprising: • a first absorber (31) in a thin layer, with a total surface area Si, • thermally coupled to the thermometer transducer (23), • adapted to absorb electromagnetic radiation in a spectral sub-band AXi of the spectral band AXtot, centered on a wavelength Xcl, and is spaced from the reflector (12) by a value hi equal to Xcl / 4neql so as to form with the latter a first quarter-wave cavity Ci for the wavelength Xci, neql being a refractive index of the medium associated with the first quarter-wave cavity Ci; • at least one second thin-layer absorber (32), with a total surface area S2, • thermally coupled to said thermometer transducer (23), • arranged in the absorbent membrane (20) so as not to be covered by the first absorber (31), • characterized in that the second absorber (32) is adapted to absorb the electromagnetic radiation in a spectral sub-band A / .2 of the spectral band AXtot, centered on a wavelength Xc2, and is spaced from the reflector (12) by a value h2 equal to Xc2 / 4neq2 so as to form with the latter a second quarter-wave cavity C2 for the wavelength Xc2, neq2 being a refractive index of the medium associated with the second quarter-wave cavity C2, the spectral sub-band A / .2 being centered on the wavelength Xc2 equal to Xci / 2 to within plus or minus 2pm, • and in that the first and second absorbers (31, 32) have total surfaces such that a surface ratio S2 / Si is between 0.5 and 3.

2. Thermal detector (1) according to claim 1, wherein the first absorber (31) rests on the thermometer transducer (23).

3. Thermal detector (1) according to claim 1 or 2, wherein the second absorber (32) extends into the absorbing membrane (20) without being covered by the thermometer transducer (23).

4. Thermal detector (1) according to claim 3, in which the second absorber (32) is formed by parts (32.1, 32.2) of a metal layer, forming, on the one hand, polarization tracks at the level of holding arms (3) ensuring the holding and thermal insulation of the absorbent membrane (20), and on the other hand, polarization electrodes coming into contact with the thermometer transducer (23).

5. Thermal detector (1) according to claim 4, wherein the metal layer extends planarly in the holding arms (3) and in the absorbing membrane (20).

6. Thermal detector (1) according to any one of claims 1 to 5, comprising a third absorber (33) adapted to absorb the electromagnetic radiation in a spectral sub-band AX3 of the spectral band AXtot, centered on a wavelength Xc3, and is spaced from the reflector (12) by a value h3 equal to Xc3 / 4neq3 so as to form therewith a quarter-wave cavity C3 for a wavelength Xc3, n eq3 being a refractive index of the medium associated with the quarter-wave cavity C3, the wavelength Xc3 being located between the wavelengths XC1 ^c2*

7. Thermal detector (1) according to claim 6, wherein the distance h3 is equal to the distance h2, the third absorber (33) being covered by the thermometer transducer (23).

8. Thermal detector (1) according to any one of claims 1 to 7, comprising at least one absorber adapted to absorb the radiation electromagnetic in a spectral sub-band AX4 of the spectral band AXtot, centered on a wavelength Xc4, and is spaced from the reflector (12) by a value h4 equal to Xc4 / 4neq4 so as to form with the latter a quarter-wave cavity C4 for a wavelength Xc4, neq4 being a refractive index of the medium associated with the quarter-wave cavity C 4, the absorber of the quarter-wave cavity C4 being located in a flat part of the absorbing membrane (20) forming a step relative to a main plane in which extends a metal layer forming polarization tracks located in holding arms (3) and polarization electrodes in contact with the thermometer transducer (23).

9. Thermal detector (1) according to any one of claims 1 to 8, wherein the detection spectral band AXtot comprises the LWIR spectral band ranging from 8 to 12pm.

10. Thermal detector (1) according to any one of claims 1 to 9, having an absorption at least equal to 80% in the entire detection spectral band AXtot.

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