Magnetically actuated reflective device and associated method

Abstract

Title: Magnetically actuated reflective device and associated method The invention relates to a reflective device (1) comprising: a substrate (S), a mirror (10) configured to be pivoted about at least one axis of rotation (A1), an actuator module (6) comprising at least one magnet (20) and at least one electrical line (30) configured to be traversed by an electric current (i), the actuator module (6) being configured to rotate the mirror (10) by a driving force (FL), in which the at least one magnet (20) comprises a stack (2) of at least one bilayer comprising a first sub-layer (3) based on an antiferromagnetic material and a second sub-layer (4) based on a ferromagnetic material. The invention also relates to the method for manufacturing the reflective device (1) in which the at least one magnet (20) is formed by depositing the stack (2) on the substrate (S). Figure for abstract: Fig.1

Description

Title of the invention: Magnetically actuated reflective device and associated method Technical field

[0001] The present invention relates to the field of reflective devices intended to reflect an incident light beam towards a target. It finds a particularly advantageous application in the field of MEMS (microelectromechanical systems) micromirrors, in particular for LIDAR (light detection and ranging) and imaging applications, for example in picoprojectors. STATE OF THE ART

[0002] Reflective devices are used in many applications in which an attempt is made to reflect an incident light beam towards a given target.

[0003] For this purpose, an incident light beam is emitted by a source towards the reflecting device having a mirror. The mirror has a front face arranged to receive the incident light beam. The mirror is oriented with the source so as to form a reflected beam in the direction of the target.

[0004] For example, MEMS micromirrors are commonly used for LIDAR or projection applications. The micromirrors may include an actuator module configured to rotate the micromirror about at least one rotational axis. The actuation of the micromirrors may be electrostatic, magnetic, or piezoelectric.

[0005] Magnetic actuation of micromirrors is the most widespread. It has the advantage of being linear at low frequency and has a wide range at low voltage.

[0006] Reflective devices comprising a magnetic actuation module are conventionally manufactured by the heterogeneous assembly of a permanent solid magnet to a micromirror mechanically coupled to a coil. In these solutions, the solid magnet is therefore attached to the substrate, for example by gluing. The integration of such a magnet into the reflective device requires additional manufacturing steps which can be complex and expensive. In addition, its large volume clogs the device and increases the energy consumption required to actuate the micromirror.

[0007] An object of the present invention is therefore to propose an improved solution for a magnetically actuated reflective device. An objective of the present invention may in particular be to provide a magnetically actuated reflective device, simplified manufacturing. An objective of the present invention may in particular be to provide a magnetically actuated reflective device of improved compactness.

[0008] Other objects, features and advantages of the present invention will become apparent from a consideration of the following description and accompanying drawings. It is understood that other advantages may be incorporated. SUMMARY

[0009] To achieve this objective, according to one embodiment, a reflector device is provided intended to reflect an incident light beam comprising: • a substrate comprising a first part, and a second part movable relative to the first part around at least one axis of rotation, • a mirror arranged integrally on the second part of the substrate, the mirror being configured so as to be pivoted around the at least one axis of rotation and so as to receive the incident light beam to form a reflected beam, • an actuator module comprising at least one magnet and at least one electrical line configured to be crossed by an electrical current (i), the at least one electrical line being based on an electrically conductive material, the actuator module being configured to drive the second part of the substrate and of the mirror in rotation by a driving force generated by an interaction between the at least one magnet and the electrical current crossing the at least one electrical line, one of the at least one magnet and the at least one electrical line being arranged on the first part of the substrate, the other of the at least one magnet and the at least one electrical line being arranged on the second part of the substrate, and the at least one magnet comprising a stack of at least one bilayer comprising a first sub-layer based on an antiferromagnetic material and a second sub-layer based on a ferromagnetic material, the stack being magnetized along at least one magnetization direction.

[0010] The movement of the mirror is thus actuated by the Laplace force generated between the electrical line, also called coil, and the magnet. The magnet comprising a stack of sub-layers based on alternating ferromagnetic and antiferromagnetic materials, it can be deposited by microelectronic deposition techniques, instead of having to be reported by heterogeneous assembly. As detailed with reference to the method, the homogeneous integration of these different bricks allows the simplification and reduction of the manufacturing costs of the reflector device. Additional heterogeneous assembly steps can be avoided, which are complex and expensive. The performance of the device can also be improved by this homogeneous integration, by limiting the risk of defects in the magnet. or more generally of the device induced by heterogeneous integration. The actuation of the mirror is therefore made more reliable. In addition, the magnet can thus have reduced dimensions, and in particular a reduced thickness, compared to existing solutions. This thickness can typically be micronic. The compactness of the device is therefore improved.

[0011] A second aspect of the invention relates to a method of manufacturing a reflective device, the method comprising: • a supply of a substrate, • a formation of the actuator module on the upper face of the substrate, the formation comprising: • a deposition on the upper face of the substrate of a stack of at least one bilayer comprising a first sub-layer based on an antiferromagnetic material and a second sub-layer based on a ferromagnetic material, superimposed on the first sub-layer, • a heat treatment of the deposited stack under application of a magnetic field so as to magnetize the stack in at least one direction of magnetization, • a deposit of an electrically conductive material on the upper face of the substrate, so as to form at least one electrical line, • a deposit of a mirror on the upper face of the substrate, • at least one etching of the substrate so as to form a first part and a second part movable relative to the first part about at least one axis of rotation, the deposits and the etching being configured together so that the mirror is deposited on the second part of the substrate, one of the at least one magnet and the at least one electrical line is arranged on the first part of the substrate, the other of the at least one magnet and the at least one electrical line is arranged on the second part of the substrate.

[0012] The basic building blocks of a magnetically actuated reflective device are thus formed on the substrate by microelectronic deposition techniques, instead of being reported heterogeneously: the power line, the mirror, and the magnet formed by deposition on the substrate. This monolithic and collective integration of these different building blocks allows the simplification of the manufacturing of the reflective device, by avoiding additional heterogeneous assembly steps which can be complex and expensive. Manufacturing costs are thus limited. Monolithic integration also makes it possible to significantly reduce the distance separating the magnet from the power line. This significant reduction in the distance between the magnet and the line electrical would prove complex in manufacturing the actuator module by individual magnet transfer. Monolithic integration also allows for improved performance of the reflector device, in particular by circumventing the mechanical constraints that can be imposed by a heterogeneous assembly. BRIEF DESCRIPTION OF THE FIGURES

[0013] The aims, objects, as well as the characteristics and advantages of the invention will emerge more clearly from the detailed description of an embodiment thereof which is illustrated by the following accompanying drawings in which:

[0014] [Fig.l] [Fig.l] schematically illustrates a magnetically actuated reflective device in an orthonormal frame of reference, comprising the axes X, Y, Z, according to an exemplary embodiment.

[0015] [Fig.2A][Fig.2B] Figures 2A and 2B schematically illustrate according to YZ cross sections of a magnet comprising a stack of bilayers based on antiferromagnetic and ferromagnetic materials, manufactured by deposition according to the present invention, according to an exemplary embodiment.

[0016] [Fig.3][Fig.4][Fig.5A][Fig.6A][Fig.7A] Figures 3, 4, 5A, 6A and 7A illustrate schematically along an XY plane top views of different exemplary embodiments of the reflector device, according to several embodiments of the present invention.

[0017] [Fig.5B][Fig.6B][Fig.7B] Figures 5B, 6B and 7B, schematically illustrate according to XZ or YZ transverse sections, the different examples of embodiment of the reflector device illustrated in Figures 5A, 6A and 7A.

[0018] [Fig.8A] [Fig.8A] schematically illustrates along an XY plane a top view of the reflector device, according to another embodiment of the present invention.

[0019] [Fig.8B] [Fig.8B] schematically illustrates, along a YZ cross-section, the reflective device illustrated in [Fig.8A].

[0020] [Fig.9A][Fig.10A] Figures 9A and 10A schematically illustrate along an XY plane two examples of configurations of the actuator module of the reflector device according to the present invention.

[0021] [Fig.9B][Fig.10B] Figures 9B and 10B represent graphs of the magnetic field produced by the at least one magnet as a function of a distance g between the at least one magnet and the electrical line, obtained by calculations carried out for each of the two configurations illustrated in Figures 9A and 10A respectively.

[0022] [Fig. 11A][Fig. 12A][Fig. 13A][Fig. 14A] Figures 11A, 12A, 13A and 14A schematically illustrate along an XY plane top views of the different stages of the manufacturing method of the reflective device, according to an embodiment of the present invention.

[0023] [Fig. 11B][Fig. 12B][Fig. 13B][Fig. 14B] Figures 11B, 12B, 13B and 14B schematically illustrate, along XZ or YZ cross sections, the different stages of the manufacturing process of the reflective device, according to an embodiment of the present invention.

[0024] [Fig.l5A][Fig.l5B][Fig.l5C][Fig.l5D] Figures 15A, 15B, 15C and 15D, schematically illustrate according to YZ transverse sections, the manufacturing steps of an actuator module according to a first example.

[0025] [Fig.l6A][Fig.l6B][Fig.l6C][Fig.l6D][Fig.l6E][Fig.l6F] Figures 16A to 16F schematically illustrate, using YZ cross-sections, the steps in manufacturing an actuator module according to a second example.

[0026] [Fig. 17A] [Fig. 17B] [Fig. 17C] [Fig. 17D] [Fig. 17E] [Fig. 17F] [Fig. 17G] [Fig. 17H] [Fig. 171] Figures 17A to 171 schematically illustrate, using YZ cross sections, the steps in manufacturing an actuator module according to a third example.

[0027] In the cross-sectional figures, section planes are indicated (A-A', B-B',..., N-N') with cross-references to the section planes of the corresponding figures.

[0028] The drawings are given as examples and are not limiting of the invention. They constitute schematic representations of principle intended to facilitate the understanding of the invention and are not necessarily on the scale of practical applications. In particular, on the schematic diagrams, the thicknesses and / or dimensions of the different layers, patterns and reliefs are not representative of reality. DETAILED DESCRIPTION

[0029] Before commencing a detailed review of embodiments of the invention, optional features are set out below which may optionally be used in combination or alternatively.

[0030] According to one example, the first and second sub-layers are superimposed. More particularly, the second sub-layer based on a ferromagnetic material can be superimposed on the first sub-layer based on an antiferromagnetic material.

[0031] According to one example, the at least one magnet is secured to the substrate without the use of an adhesive material or mechanical fixing or welding.

[0032] The magnet is integrated into the reflector device in a homogeneous and monolithic manner, that is to say without recourse to assembly methods such as welding, mechanical fixing, or the use of an adhesive material. This homogeneous and monolithic integration improves the compactness of the reflector device and facilitates its manufacture.

[0033] According to one example, the magnet is directly in contact with the substrate, and preferably without an adhesive interface.

[0034] According to one example, the at least one magnetization direction (M) is in the main extension plane of the stack, and for example of the bilayer.

[0035] According to one example, the at least one magnet and the at least one electrical line are separated by a shortest distance g between the at least one magnet and the at least one electrical line, the distance g being greater than or equal to 500 nm. According to one example, the distance g is less than or equal to 7 pm, preferably less than or equal to 5 pm.

[0036] The distance g separating the magnet and the power line is a parameter that has a significant impact on the intensity of the driving force FL. The closer the magnets and the power line are, the greater the Laplace force FL. Reducing the distance g makes it easier to magnetically actuation the mirror. This therefore allows a reduction in the energy consumption required to actuation the mirror.

[0037] According to one example, the second sub-layer based on a ferromagnetic material has a thickness e4 of between 2 nm and 50 nm, preferably between 10 nm and 50 nm.

[0038] According to one example, the first sub-layer based on an antiferromagnetic material has a thickness e3 of between 5 nm and 50 nm, preferably between 5 nm and 30 nm.

[0039] The thicknesses e3 and e4 can be advantageously optimized for each pair of ferromagnetic and antiferromagnetic materials. Preferably, the thickness e3 of the sub-layers based on an antiferromagnetic material is minimized, and the thickness e4 of the sub-layers based on a ferromagnetic material is maximized, while maintaining a significant exchange interaction between the two materials. For example, for an antiferromagnetic material based on PtMn, the thickness e3 is preferably chosen to be around 20 nm, preferably around 12 nm, and the thickness e4 of the ferromagnetic sub-layers can be around 20 nm. According to another example, for an IrMn-based antiferromagnetic material, the thickness e3 is preferably chosen around 8 nm, preferably around 5 nm, and the thickness e4 of the ferromagnetic sub-layers can be chosen around 20 nm.According to another example, for a NiMn-based antiferromagnetic material, the thickness e3 is preferably chosen around 50 nm, and the thickness e4 of the ferromagnetic sub-layers can be chosen around 50 nm.

[0040] According to one example, the stack of at least one magnet has a thickness of between 700 nm and 5 μm, preferably between 900 nm and 2 μm, and more preferably still equal to 1 μm.

[0041] The effective magnetic thickness of the magnet is the sum of the thicknesses of all the ferromagnetic sub-layers. Indeed, the antiferromagnetic material has substantially compensated magnetic moments, and therefore does not produce a magnetic field, or produces an extremely weak magnetic field. It is mainly the magnetic moments present in the ferromagnetic material that contribute to the effective magnetization of the magnet. The effective magnetic thickness may be substantially between 350 nm and 2.5 pm, preferably between 450 nm and 1 pm, and even more preferably may be substantially equal to 0.5 pm, depending on the number of ferromagnetic sub-layers.

[0042] According to one example, the stack of at least one magnet comprises N superimposed bilayers, N being an integer between 10 and 50.

[0043] The number N of bilayers determines the total thickness as well as the effective magnetization of the magnet.

[0044] According to one example, the width of the magnet is of the order of 200 μm.

[0045] According to one example, the length of the magnet is of the order of 5 mm.

[0046] The reduced dimensions of the magnet make it possible to reduce the size of the device and to reduce the energy consumption of the reflector device.

[0047] According to one example, the actuator module is configured so that two driving forces are exerted on the second movable part of the substrate, said forces being in opposite directions to each other.

[0048] According to one example, the actuator module comprises at least two magnets, the at least one electrical line being arranged on the second movable part of the substrate in a manner integral with the mirror, the at least two magnets being respectively arranged on the first part on either side of the at least one electrical line relative to the axis of rotation of the mirror.

[0049] According to one example, the actuator module comprises at least two electrical lines, the at least one magnet being arranged on the second movable part of the substrate in a manner integral with the mirror, the at least two electrical lines being respectively arranged on the first part of the substrate on either side of the at least one magnet relative to the axis of rotation of the mirror.

[0050] These two configurations allow the generation of two Laplace forces which will be exerted in two opposite directions on either side of the second mobile part of the substrate, to facilitate the rotation of the mirror.

[0051] The configuration in which the electrical line is arranged on the second movable part of the substrate has the advantage of lightening the weight of the movable part and facilitating the rotation of this movable part.

[0052] According to one example, the actuator module comprises at least two magnets, the at least one electrical line being arranged on the second movable part of the substrate in a manner integral with the mirror, the at least two magnets being respectively arranged on the first part on either side of the at least one electrical line relative to the axis of rotation of the mirror, in which the second movable part of the substrate has a recess around which the at least one electrical line forms a loop, the reflective device further comprising a third magnet secured to the first part of the substrate and arranged in the recess.

[0053] The recess in the second movable part makes it possible to lighten the weight of the movable part and to facilitate its rotation. The addition of a magnet makes it possible to increase the intensity of the Laplace forces generated in order to further facilitate the rotation of the mirror.

[0054] According to one example, the mirror surmounts one of the at least one magnet and the at least one electrical line.

[0055] The integration of the magnet or the electric line below the mirror makes it possible to optimize the compactness of the device.

[0056] According to one example, the mirror comprises a metallic reflective layer, preferably based on gold (Au) or aluminum (Al).

[0057] According to one example, the mirror comprises a Bragg stack.

[0058] According to one example, the at least one magnet comprises a plurality of sub-magnets juxtaposed with each other, each sub-magnet being bar-shaped and comprising the stack of at least one bilayer.

[0059] Dividing the magnet into sub-magnets in the form of parallel bars, so that each bar has a large length to width ratio, makes it possible to maintain good alignment of the magnetic moments along the main direction of extension of the bar.

[0060] Due to the elongated shape of the bars, the magnetization can naturally align along their main directions, i.e. the direction in which their length is measured, during the manufacture of the magnet and more particularly when magnetic annealing is carried out. The orientation of the magnetization direction is made more reliable, which makes the actuation of the mirror more reliable. This can be particularly advantageous for manufacturing sub-magnets having two distinct magnetization directions.

[0061] According to one example, the sub-magnets form a matrix in at least one dimension, by being juxtaposed along a direction perpendicular to their main extension direction and parallel to the main extension plane of the substrate.

[0062] According to one example, the sub-magnets have directions of magnetization (M) that are distinct from each other.

[0063] Thus, Laplace forces can be generated in different directions. This can in particular make it possible to actuate a rotation of the mirror along two axes of rotation.

[0064] According to one example, the sub-magnets are separated by a non-magnetic material, preferably based on silicon oxide (SiO2).

[0065] According to one example, the at least one magnet comprises a plurality of matrices of superimposed sub-magnets, in a direction normal to the main extension direction of the stack or equivalently of the substrate. The superposition of the matrices of magnetic bars in the same direction makes it possible to increase the effective magnetization of the magnet.

[0066] According to one example, the electrically conductive material is based on a metal, such as aluminum or copper, preferably based on copper.

[0067] According to one example, the power line is connected to an electrical power source.

[0068] This source makes it possible to supply the electric line or coil with a current which interacts with the magnetic field emanating from the magnet to generate a Laplace force FL called a driving force, the direction of which depends on the direction of the electric current and the direction of the magnetization of the magnet.

[0069] According to one example, the ferromagnetic material is based on CoFe, and the antiferromagnetic material is based on PtMn or IrMn.

[0070] The choice of these pairs of ferromagnetic and antiferromagnetic materials makes it possible, on the one hand, to improve the saturation magnetization Ms in the main extension plane of the bilayer, which improves the generation of the driving force FL. On the other hand, it makes it possible to simplify the integration of the magnet, for example by physical vapor deposition (PVD or "Physical Vapor Deposition" according to the English terminology).

[0071] According to one example, the CoFe composition of the ferromagnetic material is richer in cobalt (Co) than in iron (Fe).

[0072] This makes it possible to improve the exchange interaction between the two ferromagnetic and antiferromagnetic materials, and consequently, to improve the resistance of the magnet to magnetic shocks. On the other hand, this tends to decrease the saturation magnetization Ms.

[0073] According to one example, the CoFe composition of the ferromagnetic material is richer in iron (Fe) than in cobalt (Co).

[0074] This makes it possible to increase the saturation magnetization Ms. On the other hand, this tends to decrease the exchange interaction between the two ferromagnetic and antiferromagnetic materials.

[0075] According to one example, the heat treatment of the stack is carried out at a temperature greater than or equal to 265°C for an antiferromagnetic material based on IrMn.

[0076] According to one example, the heat treatment of the stack is carried out at a temperature greater than or equal to 290°C for an antiferromagnetic material based on PtMn.

[0077] According to one example, the heat treatment of the stack is carried out for a duration greater than or equal to 1 hour.

[0078] The heat treatment is often carried out at a temperature above the blocking temperature of the bilayer from which the exchange interaction between the antiferromagnetic sublayer and the ferromagnetic sublayer disappears. This makes it possible to reorient the magnetic moments in the ferromagnetic material according to the direction of the applied external magnetic field. After carrying out the heat treatment and cooling the magnet to a temperature below the blocking temperature, the exchange interaction is reestablished, and the magnetic moments in the ferromagnetic material are fixed in the desired direction, which preferably is in the main extension plane of the bilayer.

[0079] According to one example, the heat treatment is carried out under the application of a magnetic field having a direction which makes an angle of 45° with the main extension direction of the sub-magnets.

[0080] This makes it possible to obtain at the end of the heat treatment two perpendicular magnetization directions, which makes it possible to activate a rotation of the mirror along two rotation axes.

[0081] According to one example, the intensity of the magnetic field applied during at least part of the heat treatment, and according to one example during the entire heat treatment, is greater than or equal to 1 T.

[0082] According to one example, the formation of the actuator module further comprises: • etching of the deposited stack so as to form two distinct first magnets, separated by a space exposing the internal flanks of the two first magnets and the upper face of the substrate,

[0083] According to one example, the formation of the actuator module further comprises: • depositing a layer of resin on the first two magnets so as to cover the surface and the internal sides of the first two magnets and to define a pattern intended for the formation of at least one electrical line between the first two magnets, • the deposition of the electrically conductive material in the pattern defined in the previous step, to form at least one electrical line, • removal of the resin layer after deposition of the electrically conductive material.

[0084] According to one example, the formation of the actuator module further comprises: • the deposition of a layer of electrically conductive material on the first two magnets so as to cover at least the surface of the first two magnets, and to fill at least in part, and preferably entirely, the space between the first two magnets, • etching the layer of electrically conductive material between the first two magnets so as to form two trenches in the layer of electrically conductive material delimiting an electrical line separate from the two magnets, preferably without exposing the internal sides of the first two magnets.

[0085] According to one example, the formation of the actuator module further comprises: • a deposition of a first layer of oxide on the first two magnets so as to cover the surface and the sides of the first two magnets, and to fill at least in part, and preferably entirely, the space between the first two magnets, • partial etching of the first oxide layer directly above the space between the first two magnets, substantially up to the plane comprising the upper face of the first two magnets, in order to form a pattern intended for the formation of at least one electrical line, • the deposition of a layer of electrically conductive material on the first oxide layer in order to fill at least in part, and preferably entirely, the pattern defined in the previous step, to form the at least one electrical line, • planarization of the layer of electrically conductive material until it substantially reaches the first oxide layer, • a formation of two second distinct magnets above the first oxide layer and directly above the first two magnets, • a deposition of a second layer of oxide so as to cover the surface and the sides of the two second magnets, and to fill at least in part, and preferably entirely, the space between the two second magnets.

[0086] According to one example, the second oxide layer is planarized so as to expose the upper face of the two second magnets.

[0087] According to one example, the deposition of the first oxide layer is followed by the following steps: • etching the first oxide layer between the first two magnets so as to expose the underlying substrate, and preferably expose the internal flanks of the first two magnets, • a deposit of a layer of resin on the first magnets so as to define a pattern between the first two magnets separated from the internal sides of the two first magnets, intended for the formation of at least one electrical line, for example the deposition of the resin layer on the first magnets is configured so as to cover at least the internal flanks of the two first magnets, and • the deposition of the electrically conductive material in the pattern defined in the previous step, to form at least one electrical line, • removal of the resin layer, • a deposition of a second layer of oxide so as to fill at least in part, and preferably entirely, the space between the at least one electrical line formed and the two second magnets.

[0088] According to one example, the deposition of the first oxide layer is followed by the following steps: • partial etching of the first oxide layer between the first two magnets so as to at least partially expose the upper face of the substrate, without exposing the internal sides of the first two magnets, and to define a pattern intended for the formation of at least one electrical line, • the deposition of the electrically conductive material in the pattern defined in the previous step, to form at least one electrical line, • a planarization of the layer of electrically conductive material preferably without exposing the upper face of the first two magnets, • a deposit of a second layer of oxide so as to cover the first two magnets and at least one electrical line.

[0089] It is specified that, in the context of the present invention, the terms "on", "overcomes", "covers", "underlying", "facing" and their equivalents do not necessarily mean "in contact with". Thus, for example, the arrangement of a first layer on a second layer does not necessarily mean that the two layers are directly in contact with each other, but means that the first layer at least partially covers the second layer by being either directly in contact with it, or by being separated from it by at least one other layer or at least one other element.

[0090] A substrate is understood to mean a layer based on a species A, a substrate, a layer comprising this species A only or this species A and possibly other species.

[0091] A parameter “substantially equal / greater / less than” a given value means that this parameter is equal / greater / less than the given value, within plus or minus 10% of this value. A parameter “substantially between” two given values ​​means that this parameter is at least equal to the smallest given value, within plus or minus 10% of this value, and at most equal to the largest given value, within plus or minus 10% of this value.

[0092] A reference frame, preferably orthonormal, comprising the axes X, Y, Z is shown in the attached figures.

[0093] It is specified that in the context of the present invention, the thickness of a layer or of the substrate is measured in a direction perpendicular to the surface along which this layer or this substrate has its maximum extension. The thickness is thus taken in a direction perpendicular to the main faces of the layer or of the substrate on which the different layers rest. More particularly, the thickness can be taken in the Z direction.

[0094] In the present patent application, the term "integral" used to qualify the connection between two parts means that the two parts are linked / fixed relative to each other, according to all degrees of freedom, unless explicitly specified differently. For example, if it is indicated that two parts are integral in translation according to a direction X, this means that the parts can be movable relative to each other, possibly according to several degrees of freedom, excluding the freedom in translation according to the direction X. In other words, if one part is moved according to the direction X, the other part performs the same movement.

[0095] In the following detailed description, use may be made of terms such as "horizontal", "vertical", "longitudinal", "transverse", "upper", "lower", "top", "bottom", "front", "rear", "inner", "outer". These terms must be interpreted relatively in relation to the normal position of the reflecting device and the propagation of the light beams, and in particular the incident light beam, relative to the reflecting device.

[0096] The steps of the method are understood in the broad sense of carrying out a part of the method and may optionally be carried out in several sub-steps. Several embodiments of the invention implementing successive steps of the manufacturing method are described below. Unless explicitly stated, the adjective "successive" does not necessarily imply, even if this is generally preferred, that the steps follow one another immediately, intermediate steps being able to separate them.

[0097] Furthermore, the term "step" does not necessarily mean that the actions carried out during a step are simultaneous or immediately successive. Certain actions of a first step may in particular be followed by actions linked to a different step, and other actions of the first step may be repeated subsequently. Thus, the term step does not necessarily mean unitary and inseparable actions in time and in the sequence of the phases of the process.

[0098] In the context of the present invention, a resin is conventionally defined as an organic or organo-mineral material which can be shaped by exposure to a beam of electrons, photons or X-rays or mechanically.

[0099] Examples of resins conventionally used in microelectronics include resins based on polystyrene (PS), methacrylate (for example Polymethyl methacrylate PMMA), Hydrosilsesquioxane (HSQ), polyhydroxystyrene (PHS), etc. The advantage of using a resin is that it is easy to deposit a significant thickness, from several hundred nanometers to several micrometers.

[0100] A reflector device 1 is now described with reference to FIGS. 1, 2A and 2B, according to an exemplary embodiment.

[0101] [Fig.l] illustrates a magnetically actuated reflector device 1 intended to reflect an incident light beam to form a reflected beam propagating in a determined direction, typically towards a target. The reflector device 1 comprises a substrate S extending for example in an XY plane defined by a direction X and a direction Y perpendicular to the direction X. The substrate S comprises a first part S1, and a second part S2 movable relative to the first part S1.

[0102] A mirror 10 allowing the reception of the incident beam and the formation of the reflected beam, is arranged in a fixed manner on the second part S2 of the substrate S. The mirror 10 is configured so as to be pivoted around at least one axis of rotation AL. The axis of rotation Al is defined for example according to the length of the second movable part S2 which extends in the direction X on either side of the mirror 10 to join the first part SL.

[0103] The reflector device 1, for example illustrated in [Fig.l], may comprise at least one actuator module 6. Each actuator module 6 comprises at least one magnet 20 having a magnetization direction M, and at least one electrical line 30. The electrical line 30 is based on an electrically conductive material 35 and is powered by an electric current i.

[0104] The current i passing through the power line 30 interacts with the magnetic field emanating from the magnet 20 to generate a Laplace force FL called “driving force”. This driving force FL makes it possible to actuate a pivoting of the second part S2, and therefore of the mirror 10 around the axis of rotation AL. The direction of the driving force FL is typically substantially perpendicular to the direction of the magnetization M, and to the direction of circulation of the current i. In addition, the direction of the driving force FL depends on the orientation of the direction of the magnetization M as well as on the direction of the current i. The direction of the magnetization M being preferably fixed, the direction of the driving force FL is determined by the direction of the current i passing through the electric line 30. It is therefore understood that the mirror 10 can be rotated in one direction or in the opposite direction.

[0105] The mirror 10 therefore passes from a rest position, that is to say an equilibrium position without magnetic actuation, to a pivoted position, by pivoting around the axis of rotation A1. Once the mirror 10 is rotated, it can be returned to a rest position. This return to the rest position can be carried out by returning to the equilibrium position, by stopping the magnetic drive.

[0106] Typically the second part S2 of the substrate is articulated in rotation with the first part SI by means of a hinge 5, and more particularly a hinge 5 deformable in torsion around the axis of rotation A1. Conventionally, this hinge 5 can comprise a portion of the substrate forming a bar deformable in torsion, connecting the first part SI and the second part S2 of the substrate. During magnetic actuation, this hinge 5 can be deformed in torsion around the axis of rotation A1 in order to allow the rotation of the second part S2 of the substrate and therefore of the mirror 10. When the driving force is no longer generated, the torsional force of the hinge 5 can cause the return to the equilibrium position.

[0107] Note that in the configuration of the reflector device 1 illustrated in [Fig.l], two actuator modules 6 are represented. According to the example illustrated, the reflector device comprises two actuator modules 6 arranged on either side of the mirror 10 along a direction parallel to the axis of rotation A1 of the mirror 10, so as to increase the resultant of the driving forces generated. The rotational drive of the mirror 10 is therefore facilitated. The pivoting of the mirror 10 can nevertheless be driven by a single actuator module 6. For the sake of simplification and without limitation, a single actuator module 6 will be represented in the figures and embodiments described below.

[0108] As illustrated for example in Figures 2A and 2B, the magnet 20 comprises a stack 2 of at least one bilayer in a direction Z perpendicular to the directions X and Y. Each bilayer comprises a first sub-layer 3 based on, and preferably made of, an antiferromagnetic material, and a second sub-layer 4 based on, and preferably made of, a ferromagnetic material. The superposition of a ferromagnetic material on an antiferromagnetic material gives rise to an exchange interaction between the magnetic moments at the interface between the first sub-layers 3 and the second sub-layers 4, which freezes the magnetic moments, in particular in the second ferromagnetic sub-layers 4.

[0109] The second sub-layer 4 can be superimposed on the first sub-layer 3. The superposition of an antiferromagnetic material on a ferromagnetic material improves the resistance of the magnet 20 to magnetic shocks. The stack 2 can include N bilayers, N being an integer between 10 and 50. Figures 2A and 2B show an example with N=2.

[0110] The stack 2 is manufactured by microelectronic deposition techniques. This makes it possible to integrate the magnet 20 into the reflector device 1, by depositing the stack 2 on the substrate S, in a homogeneous manner with the deposition of the mirror 10 and the electrical line 30 during the manufacturing process.

[0111] Following the deposition of the stack 2, the direction of the magnetization M can be defined during the process as will be described in detail later. This direction of the magnetization M is preferably taken in the XY plane which makes it possible to generate a driving force FL in the Z direction.

[0112] The actuator module 6 described above, comprising at least one magnet 20 and at least one electrical line 30, can be configured in several ways. According to one example, the actuator module 6 is configured so that two driving forces are exerted on the second movable part S2 of the substrate, in opposite directions between the two opposite edges 7a, 7b, of the movable part S2 relative to the rotation axis AL. Thus, the rotation of the mirror 10 is facilitated.

[0113] For this, according to a first embodiment, an electrical line 30 forming a loop or a coil is arranged on the second movable part S2, and two magnets 20 are arranged on the first part SI on one side and the other of the movable part S2, in a direction perpendicular to the axis of rotation AL. Several variants of this first embodiment which will be described in a first step, make it possible in particular to improve the generation of the driving force FL and the compactness of the reflector device 1. According to a second embodiment, two electrical lines 30 are arranged on the first part SI, on one side and the other of a magnet arranged on the movable part S2, in a direction perpendicular to the axis of rotation AL. This second embodiment will be described in a second step in the following description.

[0114] [Fig. 3] illustrates a top view along the XY plane of a reflector device 1, according to the first embodiment of the present invention. The electrical line 30 may form a loop or a coil, such that the current i propagates in the electrical line 30 on a first part of the loop, arranged opposite an edge of the movable part S2. The current i therefore propagates in a first direction relative to the reflector device. The current i may propagate in the electrical line 30 on a second part of the loop, arranged opposite an opposite edge, relative to the axis of rotation A1, of the movable part S2. The current i thus propagates in a second direction relative to the reflector device, opposite to the first. According to this first embodiment, the electrical line 30 may be arranged on the second movable part S2 of the substrate S in a manner secured to the mirror 10. Two magnets 20 preferably having the same magnetization direction M, can be arranged respectively on the first part SI on either side of the electrical line 30 in a direction perpendicular to the axis of rotation Al of the mirror 10. The current i interacts with the first magnet 20 of the first part of the loop to generate a driving force FL in the direction Z in a first direction, then interacts with the second magnet 20 of the second part of the loop to generate a driving force Fl in a second direction opposite to the first direction. These two forces opposed to each other, facilitate the rotation of the second mobile part S2. The inversion of the direction of circulation of the current i in the loop, relative to the reflector device, induces a reversal of the direction of the two driving forces, which allows a pivoting of the mirror 10 around the axis of rotation Al in a positive or negative direction relative to an axis perpendicular to the axis of rotation AL [Fig.3] illustrates an example of pivoting of the mirror 10 around the rotation axis Al defined according to the X direction, in a negative direction of the Y direction.

[0115] The arrangement of the electrical line 30 on the second mobile part S2 also makes it possible to reduce the weight of this second mobile part S2, which facilitates the rotation of the mirror 10. According to one example, the second mobile part S2 can advantageously have a recess 8 around which the electrical line 30 forms the loop, which also makes it possible to reduce the weight of the second mobile part S2.

[0116] According to a variant illustrated in [Fig.4], each magnet 20 may comprise a plurality of sub-magnets 25 juxtaposed with each other. According to this example, each sub-magnet 25 is bar-shaped and comprises the stack 2 of bilayers described previously. The sub-magnets 25 are more particularly juxtaposed in the direction X, along a direction substantially perpendicular to their main direction of extension Y. This configuration makes it possible to preserve good alignment of the magnetic moments of the magnet 20 in the main direction of extension of the bar, during manufacture. Due to the elongated shape of the sub-magnets 25, the magnetization M can naturally align along their main directions, i.e. the direction in which their length Ua is measured, during the manufacture of the magnet 20 and more particularly when a heat treatment is carried out.The orientation of the magnetization direction M is made more reliable, which makes the actuation of the mirror 10 more reliable. The sub-magnets 25 are preferably substantially parallel to each other, and each sub-magnet 25 advantageously has a high aspect ratio with a length Ua along the Y direction, over a width Va along the Y direction, preferably Ua / Va>10.

[0117] According to an exemplary embodiment, the sub-magnets 25 may have magnetization directions M that are distinct from each other. Thus, Laplace forces FL may be generated in different directions. This can in particular make it possible to activate a rotation of the mirror 10 along two different rotation axes.

[0118] According to an example not illustrated, the sub-magnets 25 are separated by a non-magnetic material, preferably based on silicon oxide (SiO2). This makes it possible to form a matrix of sub-magnets 25 which can be superimposed with a plurality of matrices of sub-magnets 25. The superposition of the matrices of magnetized bars following the same magnetization direction M makes it possible to increase the effective magnetization of the magnet.

[0119] As illustrated in Figures 5A and 5B, according to one example, the reflector device 1 may further comprise a third magnet 20 secured to the first part SI of the substrate S and arranged in the recess 8. The addition of a third magnet 20 at the center of the electrical loop makes it possible to increase the intensity of the Laplace forces FL of opposite directions generated, which further facilitates the rotation of the mirror 10. Results of calculations carried out as a function of different configurations of the actuator module 6 show the effect of the addition of a third magnet 20 on the intensity of the driving force Fl. These results will be presented later in this description.

[0120] Figures 6A and 6B illustrate an exemplary embodiment further improving the compactness of the reflector device 1. In this example, the dimensions of the second movable part S2 are reduced. Indeed, the recess 8 in this part extends to the plumb line of the electrical line 30, as shown by transverse sections BB' and CC' along the planes YZ and XZ, respectively. This makes it possible to further reduce the weight of the second movable part S2, which facilitates the rotation actuation of the mirror 10. It is understood that the dimensions of the elements composing the reflector device 1 can be adjusted according to the architectures envisaged.

[0121] As illustrated in Figures 7A and 7B, according to another example, the mirror 10 can be arranged in superposition with the electrical line 30 as shown in the transverse section DD' along the plane YZ. This makes it possible to improve the compactness of the reflector device 1.

[0122] Figures 8A and 8B illustrate an alternative embodiment of the present invention. According to this alternative, the magnet 20 is arranged on the second movable part S2 of the substrate S. The mirror 10 can more particularly be superimposed with the magnet 20, as shown by the transverse section FF' along the plane YZ. Two electrical lines 30 are arranged on either side of the magnet 20 relative to the axis of rotation A1, on the first part SL. A current i flows in each of the electrical lines 30 on either side of the magnet 20, in opposite directions, so that the Laplace forces FL generated are in opposite directions.

[0123] Now we will describe the parameters which influence the intensity of the Laplace force FL generated by the interaction between the current i and the magnetic field emanating from the at least one magnet 20. In a known manner, the intensity of FL follows the following equation:

[0124] FL = Bxixl

[0125] Where B represents the intensity of the magnetic field produced by the magnet 20 at a distance g between the power line 30 and the magnet 20 taken along the direction Y, i represents the intensity of the current i passing through the power line 30, and l represents the length of the interaction between the current i and the magnetic field, which preferably corresponds to the length of the magnet 20. The Laplace force FL depends on this distance g. In order to evaluate the influence of the distance g on the intensity of the force FL, calculations were carried out for two different configurations, illustrated in Figures 9A and 10A.

[0126] [Fig.9A] illustrates a first configuration in which a single magnet 20 interacts on the one hand with the loop-shaped electrical line 30. Calculations based on the parameters presented in the table below, with reference to [Fig.9A], were carried out. In the examples presented, in order to simulate a stack 2 comprising ferromagnetic sub-layers having a saturation magnetization Ms of the order of 2.4 T and a thickness approximately equal to that of the antiferromagnetic sub-layers, a permanent magnet having a saturation magnetization Ms of the order of 1.2 T replaces the stack 2 in the calculations.For example, this permanent magnet can simulate a stack 2 of 25 bilayers, comprising antiferromagnetic sublayers based on PtMn each having a thickness around 20 nm, and ferromagnetic sublayers based on CoFe having a composition of 65% Fe and 35% Co, for example, and each having a thickness around 20 nm. [Tables 1] Parameters Values ​​Number of magnets 1 Thickness of a magnet 1 pm Maximum intensity of the magnetic field generated by the magnet 1.2 T Width b of the magnet in the y direction 200 pm Length 1 of the magnet in the x direction 5 mm Number of electric lines 1 Thickness r of the electric line in the z direction 1 pm Dimension d of the power line in the y direction 100 pm Intensity of the electric current 100 mA

[0127] The results of the calculations show that most of these parameters have an impact proportional to their value on the intensity of the Laplace force FL. The thickness r of the power line 30 and the length 1 of the magnet 20 have a negligible impact on this intensity. On the other hand, these parameters r and 1 have an impact on the maximum intensity of the current i supported by the power line 30, which defines the limit of electromigration in the power line. The distance ga on the other hand has a strong impact on the intensity of the driving force. The variation of the magnetic field B as a function of the distance g is represented in the graph of [Fig.9B]. By increasing the distance g between the magnet 20 and the power line 30, the intensity of the magnetic field produced by the magnet 20 decreases exponentially. This drastic variation of the magnetic field intensity as a function of distance g, has a significant impact on the intensity of the Laplace force FL.The closer the magnet 20 and the power line 30 are, the greater the Laplace force FL, which facilitates the actuation of the pivoting of the mirror 10. In addition, this allows the reduction of energy consumption, because for a fixed current intensity value i, it is sufficient to reduce the distance g to increase the intensity of the driving force FL. According to the graph in [Fig.9B], to obtain a significant driving force FL, the distance g is preferably less than or equal to 7 pm, preferably less than or equal to 5 pm. These reduced values ​​of the distance g are advantageously achievable thanks to the monolithic integration of the magnet 20 and the power line 30. For a distance g equal to 5 pm, the calculated intensity of the Laplace force FL is around 20.5 pN. In the case where two magnets 20 are arranged on either side of the moving part S2, the sum of the forces in absolute value is therefore 41 pN.

[0128] [Fig.10A] illustrates an example in which two magnets 20 interact with the current i passing through the loop-shaped electrical line 30. The first magnet 20 is arranged outside the loop at a distance g from the electrical line 30. The second magnet 20 is arranged in the center of the loop at the same distance g from the electrical line 30, for example in a recess 8 of the moving part S2 as described previously. Calculations based on the parameters presented in the table below, with reference to [Fig.10A], have been carried out. [Tables 2] Parameters Values ​​Number of magnets 2 Thickness of a magnet 1 pm Total maximum intensity of magnetic fields generated by magnets 1.2 T Dimension be of external magnet in y direction 200 pm Dimension b; of external magnet in y direction 100 pm Length 1 of magnet in x direction 5 mm Number of electric lines 1 Thickness r of electric line in z direction 1 pm Dimension d of electric line in y direction 100 pm Electric current intensity 100 mA

[0129] The variation of the magnetic field B as a function of the distance g is represented in the graph of [Fig.lOB]. This graph shows that for this configuration, in order to obtain a significant driving force FL, the distance g has a significant impact. Preferably, the distance g is preferably less than or equal to 7 pm, preferably less than or equal to 5 pm. For a distance g equal to 5 pm, the intensity of the force FL calculated for the same current intensity i as for that of the previous configuration, is around 82 pN. This shows that by adding a magnet 20 inside the loop, the intensity of the force FL is significantly increased. In the case where two magnets 20 are arranged on either side of the mobile part S2, the resultant of the forces is therefore 164 pN.

[0130] For each of the two embodiments described above, a set of dimensions of the second movable part S2 is represented in the tables below. The optimization of these dimensions makes it possible to optimize the rotational resonance frequency of the mirror 10 and the maximum static displacement of the mirror 10 relative to its equilibrium position.

[0131] According to the first embodiment and with reference to the example of the reflector device illustrated in Figures 6A and 6B, the second movable part S2 can comprise: - A support for the mirror 10 of a dimension Dm along the direction Y, - A support of the electric line 30 having a recess 8, a dimension La along the X direction, a section Wi along the X direction and a thickness Ts along the Z direction, - A hinge 5 connecting the support of the electrical line 30 to the first part SI of the substrate S, having a length Lh in the X direction and a width Wh in the Y direction, - Two bars separated from each other by a distance Wa in the Y direction, connecting the support of the electric line 30 to the support of the mirror 10, having a length Lb in the X direction.

[0132] The following table shows examples of values ​​of the dimensions cited above: [Tables3] Parameter Value range Optimal value wh 5 pm <Wh<20 pm 10 pm Wi 10 pm<Wh<100 pm 50 pm Lh 50 pm<Lh<1000 pm 500 pm La 500 pm<La<2000 pm 1000 pm Lb 10 pm<Lb<100 pm 50 pm Ts 5 pm<Ts<20 pm 11 pm Wa 500 pm<Wa<2000 pm 1500 pm

[0133] The optimal value of the dimension Dm depends on the optical specifications of the reflector device 1. For example, Dm can be equal to 2000 pm. As described previously, the intensity of the Laplace force FL depends on the parameters of the actuator module 6. For example, the intensity of FL can be equal to 50 pN. For the optimal values ​​of the parameters presented in the table above and for the examples of values ​​of Dm and FL given, the torsional resonance frequency is around 500 Hz, and the static displacement of the mirror relative to its equilibrium position is ±10°.

[0134] With reference to the example of the reflector device illustrated in Figures 8A and 8B, the second movable part S2 may comprise: - A support for the mirror 10, of a dimension Dm along the direction Y, the mirror 10 being superimposed on the magnet 20, - A hinge 5 connecting the support of the mirror 10 to the first part SI of the substrate S, having a length Lh in the X direction, a width Wh in the Y direction and a thickness ts in the Z direction.

[0135] The following table shows examples of values ​​of the dimensions cited above: [Tables 4] Parameter Value range Optimal value wh 5 pm <Wh<20 pm 10 pm Lh 50 pm<Lh<1000 pm 500 pm tS 5 pm< ts<20 pm 11 pm

[0136] For the optimal values ​​of the parameters presented in the table above and for Dm equal to 2000 pm and FL equal to 50 pN, the torsional resonance frequency is around 580 Hz, and the static displacement of the mirror relative to its equilibrium position is ±13°.

[0137] Note that the same parameters can be considered for the configuration illustrated in Figures 7A and 7B. In this configuration, the mass of the second mobile part S2 is lighter, the electrical line 30 being lighter than the magnet 20, which reduces the torsional resonance frequency.

[0138] The method for manufacturing a reflector device 1 is described in the following, according to several particular embodiment examples. For the sake of simplification, only the steps for manufacturing a reflector device 1, according to the first configuration of the first embodiment, are illustrated schematically in Figures 11A, 11B to 14A, 14B. Those skilled in the art will easily adapt these figures to visualize the different steps of the method for manufacturing the reflector device 1 according to the other variants.

[0139] As illustrated in [Fig. 11 A] and 1 IB, a step of the method is to provide a substrate S extending along a plane parallel to the XY plane, and having an upper face Sa and a lower face Sb. The substrate S may be a SOI (Silicon-on-Insulator) type substrate. These known substrates comprise, according to the terminology common to those skilled in the art, a carrier silicon substrate "Si bulk" (or massive silicon) and a layer of silicon oxide called "BOX" (Buried Oxide, or buried oxide).

[0140] An actuator module 6 is then formed on the upper face Sa of the substrate S. The formation of the actuator module 6 comprises a deposition of a magnet 20, by depositing a stack 2 of N bilayers comprising a first sub-layer 3 and a second sub-layer 4 based on antiferromagnetic and ferromagnetic materials respectively, as illustrated in [Fig.2A].

[0141] Following its deposition, the stack 2 is subjected to a heat treatment under the application of a magnetic field, as illustrated in [Fig.2B]. The heat treatment is often carried out at a temperature above a so-called “blocking” temperature. Beyond the blocking temperature, the exchange interaction between the first antiferromagnetic sub-layer 3 and the second ferromagnetic sub-layer 4 disappears. This makes it possible to reorient the magnetic moments in the ferromagnetic material according to the orientation of the applied external magnetic field. After carrying out the heat treatment and cooling the stack 2 to a temperature below the blocking temperature, the exchange interaction is reestablished, and the magnetic moments in the ferromagnetic material are fixed in the desired direction, which is preferably in the main extension plane of the bilayer.Thermal annealing is preferably carried out while maintaining an intensity. of the external magnetic field greater than or equal to 1 T in the desired direction for the entire duration of the annealing, including cooling. Thermal annealing can be carried out immediately after the magnet deposition or later. Preferably, thermal annealing can be carried out at the end of the process.

[0142] The blocking temperature can therefore correspond to the ordering temperature of the antiferromagnetic material when the antiferromagnetic material is magnetically unordered. An unordered antiferromagnetic material does not exhibit exchange coupling after deposition on a ferromagnetic material. This blocking temperature is more particularly the temperature beyond which there is no longer any exchange coupling between an antiferromagnetic material and a ferromagnetic material in contact when the antiferromagnetic material is magnetically ordered. This can be the Néel temperature, i.e. the temperature above which the antiferromagnetic material becomes paramagnetic. This blocking temperature is typically above 250°C for an unordered antiferromagnetic material. For an ordered AF antiferromagnetic material, the blocking temperature is typically between 150°C and 250°C.

[0143] The formation of the actuator module 6 further comprises a formation of an electrical line 30 on the upper face Sa of the substrate S by deposition of an electrically conductive material 35. The electrically conductive material 35 may be based on a metal, such as aluminum or copper, preferably based on copper.

[0144] As illustrated in Figures 12A and 12B, a first partial etching from the upper face Sa of the substrate S is then carried out. This first etching allows the removal of a part of the substrate S so as to separate the magnet 20 and the electrical line 30, and to define a first part SI and a second part S2 in the substrate S. The hinge 5 can at least partly be defined during this etching.

[0145] As illustrated in Figures 13A and 13B, a second etching can be carried out from the lower face Sb of the substrate S. This second etching allows a partial separation of the second part S2 from the substrate in order to give it a degree of freedom allowing it to pivot around an axis of rotation A1 which extends along the length of the part S2. This partial separation can be allowed in particular by the hinge 5. The transverse sections KK' and LL' illustrated in [Fig.13B] along the planes YZ and XZ respectively, show the separation of the second part S2 from the first part S1, the second mobile part S2 being surmounted by the electrical line 30 according to the first embodiment. Note that in reality, the substrate S preferably has a layer continuity between the parts S1 and S2, by means of the hinge 5 deformable in torsion.The first and second etchings may be dry etchings, preferably reactive ion etchings (RIE).

[0146] As illustrated in figures 14A and 14B, a mirror 10 is formed on the second movable part S2 of the substrate S, by depositing a reflective layer. This reflective layer may be based on a metallic material, preferably based on gold (Au) or aluminum (Al). It may also comprise a Bragg stack. The dimensions of the mirror 10 depend on the optical specifications of the reflector device 1. The mirror 10 may for example have lateral dimensions in the XY plane of 2 mm*2 mm, and a thickness in the Z direction of 10 μm.

[0147] The formation of the stack 2 can be carried out by physical vapor deposition (PVD). This type of deposition makes it possible to simplify the integration of the magnet 20 into the reflector device 1.

[0148] The number N of bilayers of the stack 2 determines the total thickness of the magnet 20. The stack 2 may have a thickness of between 700 nm and 5 pm, preferably between 900 nm and 2 pm, and more preferably still equal to 1 pm. The length of the magnet in the XY plane may be of the order of 5 mm. Its width in the XY plane may be greater than or equal to 200 pm, preferably strictly greater than 200 pm according to the example of sub-magnets 25 in the form of bars.

[0149] The effective magnetic thickness of the magnet 20 is the sum of the thicknesses of all the second ferromagnetic sub-layers 4. Indeed, the antiferromagnetic material has substantially compensated magnetic moments, and consequently, does not produce a magnetic field, or produces an extremely weak magnetic field. It is mainly the magnetic moments present in the ferromagnetic material which contribute to the effective magnetization of the magnet 20. The second sub-layer 4 has a thickness e4 of between 2 nm and 40 nm, preferably between 20 nm and 40 nm.

[0150] The effective magnetic thickness may be substantially between 350 nm and 2.5 pm, preferably between 450 nm and 1 pm, and even more preferably may be substantially equal to 0.5 pm, depending on the number of second ferromagnetic sub-layers 4.

[0151] The ferromagnetic material may be based on a soft magnetic material, having a strong saturation magnetization Ms, typically greater than 1000 emu / cm3. The ferromagnetic material may be, for example, based on an alloy of iron (Fe), cobalt (Co) and nickel (Ni). Preferably, the ferromagnetic material is based on CoFe.

[0152] The antiferromagnetic material may be based on an alloy comprising manganese (Mn), for example of the NiMn, PdPtMn, FeMn type or based on NiO or Fe2O3. The antiferromagnetic material is preferably based on PtMn or IrMn.

[0153] The composition of the ferromagnetic material in CoFe makes it possible to control the saturation magnetization Ms of the magnet 20. The ferromagnetic material can be richer in cobalt (Co) than in iron (Fe). This makes it possible to improve the exchange interaction between the first antiferromagnetic sub-layers 3 and the second ferromagnetic sub-layers 4, and consequently, to improve the resistance of the magnet 20 to magnetic shocks. On the other hand, this tends to reduce the saturation magnetization Ms. For a composition of 20% Fe and 80% Co, Ms can be around 1.8 T.

[0154] The ferromagnetic material can be richer in iron (Fe) than in cobalt (Co). This makes it possible to increase the saturation magnetization Ms. On the other hand, this tends to decrease the exchange interaction between the first antiferromagnetic sub-layers 3 and the second ferromagnetic sub-layers 4. For a composition of 65% Fe and 35% Co, Ms can be around 2.4 T.

[0155] The composition of the antiferromagnetic material is chosen so as to improve the exchange interaction between the antiferromagnetic and ferromagnetic sub-layers. This composition may be, for example, 50%±5% platinum (Pt) and 50%±5% manganese (Mn), or 20%±5% iridium (Ir) and 80%±5% manganese (Mn).

[0156] For a stack 2 based on PtMn, the heat treatment can be carried out at a temperature between 290°C and 400°C, preferably around 320°C. For a stack 2 based on IrMn, the heat treatment can be carried out at a temperature between 265°C and 350°C, preferably around 280°C. The thermal annealing can be carried out for a duration greater than or equal to 1 hour.

[0157] Stack 2 can be formed so that each second ferromagnetic sub-layer 4 is located between two first antiferromagnetic sub-layers 3, which makes it possible to improve the exchange interaction. This can be achieved by adding an additional antiferromagnetic sub-layer on the N bilayers of stack 2.

[0158] Each of the first antiferromagnetic sub-layers 3 may have a thickness of between 2 nm and 50 nm, preferably around 20 nm for a PtMn-based antiferromagnetic material, and preferably around 8 nm for an IrMn-based antiferromagnetic material.

[0159] Stack 2 may comprise a preliminary layer, on which the magnetic bilayers are deposited. The preliminary sub-layer may be based on tantalum (Ta). This preliminary sub-layer may have a thickness of around 5 nm.

[0160] The orientation of the magnetic field applied during the heat treatment is chosen as a function of the desired magnetization M of the magnet 20. According to one example, and in particular when the deposition of the stack is configured so as to form juxtaposed and bar-shaped sub-magnets 25, the applied magnetic field has a direction which makes an angle of 45° with the X and Y directions. This makes it possible to obtain at the end of the heat treatment two perpendicular magnetization directions. The applied magnetic field preferably has an intensity greater than or equal to 1 T. According to the example in which the direction of the magnetic field makes an angle of 45° with the X and Y directions, the intensity of the magnetic field greater than or equal to 1 T is preferably applied during a rise in temperature of the thermal annealing as well as during a constant temperature plateau. The intensity of the magnetic field is then reduced to a value between 20 Oe (i.e. 1591.54 A / m) and 300 Oe (i.e. 23873.24 A / m) during a decrease in annealing temperature.This allows shape anisotropy to fix the magnetizations in the desired directions.

[0161] Stack 2 may further comprise an encapsulation layer which makes it possible to protect the magnetic bilayers. This encapsulation layer may comprise a tantalum (Ta)-based sub-layer having, for example, a thickness of 5 nm, and a ruthenium (Ru)-based sub-layer having, for example, a thickness of 8 nm.

[0162] The following paragraphs of this description describe examples of manufacturing the actuator module 6 according to the first embodiment, with reference to figures 15A-15D, 16A-16F and 17A-17I. Those skilled in the art will easily adapt these figures to visualize the different stages of manufacturing the actuator module 6 according to the second embodiment.

[0163] A first step in manufacturing the actuator module 6, common to all the examples described below, illustrated in FIGS. 15A and 15B, may comprise the following sub-steps: • The deposition of stack 2 on substrate S, as illustrated in [Fig. 15A]; • The deposition of a hard oxide mask on the magnet (stack 2), not illustrated; • Lithographic formation of an opening through the hard mask, preferably by reactive ion etching (RIE); • An etching of the stack 2 through the opening in the mask so as to form two first distinct magnets 20 as illustrated in [Fig.15B], this etching is preferably carried out by ion beam (IBE or “Ion Beam Etching” in English); The two magnets 20 formed are separated by a space exposing the inner flanks of the first two magnets 20 and the upper face Sa of the substrate S. The oxide-based hard mask can be kept on the magnets in order to protect them.

[0164] As illustrated in [Fig.l5C], following the formation of the separate magnets 20, according to a first embodiment of the actuator module 6, a resin layer 50 is deposited on the first two magnets 20 so as to cover the surface and the internal flanks of the first two magnets 20 and to define a pattern intended for the formation of the at least one electrical line 30 between the first two magnets 20. The electrically conductive material 35 is then deposited in the pattern defined in the previous step, to form the at least one electrical line 30. A removal of the resin layer 50 is carried out after the deposition of the electrically conductive material 35.

[0165] As illustrated in Figures 16A-16F, according to a second embodiment of the actuator module 6, a first oxide layer 61 is deposited on the first two magnets 20 so as to cover the surface and the sides of the first two magnets 20, and to fill at least in part, and preferably entirely, the space between the first two magnets 20. A partial etching of the first oxide layer 61 is then carried out directly above the space between the first two magnets 20, substantially up to the plane comprising the upper face of the first two magnets 20, in order to form a pattern intended for the formation of the at least one electrical line 30. A layer of electrically conductive material 35 is then deposited on the first oxide layer 61, in order to fill at least in part, and preferably entirely, the pattern defined in the previous step, to form the at least one electrical line 30.The layer of electrically conductive material 35 is then planarized until it substantially reaches the first oxide layer 61. Two separate second magnets 20 may be formed above the first oxide layer 61, and directly above the first two magnets 20. A second oxide layer 62 may be deposited so as to cover the surface and the sides of the two second magnets 20, and to fill at least in part, and preferably entirely, the space between the two second magnets 20. The second oxide layer 62 may be planarized so as to expose the upper face of the two second magnets 20. The stacking of the magnets 20 makes it possible to increase the saturation magnetization Ms, which makes it easier to actuate the rotation of the mirror 10.

[0166] As illustrated in Figures 17A-17E, according to a third exemplary embodiment of the actuator module 6, a first oxide layer 61 is deposited on the upper face Sa of the substrate S, so as to cover the surface and the flanks of the first two magnets 20, and to fill at least in part, and preferably entirely, the space between the first two magnets 20. An etching of the first oxide layer 61 is then carried out between the first two magnets 20 so as to expose the upper face Sa of the underlying substrate S, and preferably to expose the internal flanks of the first two magnets 20. A resin layer 50 is then deposited on the first magnets 20, so as to define a pattern between the first two magnets 20. magnets 20 separated from the inner flanks of the first two magnets 20, intended for the formation of the electrical line 30. The deposition of the resin layer 50 on the first magnets 20 can for example be configured so as to cover at least the inner flanks of the first two magnets 20. The electrically conductive material 35 is then deposited in the pattern defined in the previous step, to form the electrical line 30. The resin layer 50 is then removed, and a second oxide layer 62 is deposited so as to fill at least in part, and preferably entirely, the space between the formed electrical line 30 and the first two magnets 20. The second oxide layer 62 can be planarized without exposing the surfaces of the magnets 20.A first actuator module 6 formed at the end of this example can be reproduced by following the same steps described with reference to figures 17A-17E, in order to form a second actuator module 6 superimposed on the first, as illustrated in [Fig. 171],.

[0167] More generally, it is understood that the actuator modules 6 can therefore be superimposed in the reflector device 1. The superposition of the actuator modules 6, in particular of the magnets 20, makes it possible to increase the effective saturation magnetization Ms, which makes it easier to actuation of the rotation of the mirror 10.

[0168] According to another example, as illustrated in figures 17F-171, the first oxide layer 61 can be partially etched between the first two magnets 20 so as to at least partially expose the upper face Sa of the substrate S, without exposing the internal flanks of the first two magnets 20, and to define a pattern intended for the formation of the electrical line 30. The electrically conductive material 35 is then deposited in the pattern defined in the previous step, to form the electrical line 30. The layer of electrically conductive material 35 can be planarized, preferably without exposing the upper face of the first two magnets 20, and a second oxide layer 62 can be deposited, so as to cover the first two magnets 20 and the electrical line 30.A first actuator module 6 formed at the end of this example can be reproduced by following the same steps described with reference to figures 17F-17H, in order to form a second actuator module 6 superimposed on the first, as illustrated in [Fig. 171].

[0169] In view of the above description, it appears clearly that the proposed method offers a particularly effective solution for integrating at least one magnet 20 into a reflector device 1 by depositing a stack 2. This solution is furthermore advantageously compatible with standard microelectronics methods.

[0170] The invention is not limited to the embodiments previously described and extends to all embodiments covered by the invention. Various particular examples of manufacturing methods as well as device configurations reflector have been described. Many other variant embodiments are possible, for example by combining previously described features, without departing from the scope of the invention. Furthermore, the features described in relation to one aspect of the invention may be combined with another aspect of the invention.

Claims

1.

2. Claims Reflector device (1) intended to reflect an incident light beam comprising: • a substrate (S) comprising a first part (SI), and a second part (S2) movable relative to the first part (SI) around at least one axis of rotation (Al), • a mirror (10) arranged integrally on the second part (S2) of the substrate (S), the mirror (10) being configured so as to be pivoted around the at least one axis of rotation (Al) and so as to receive the incident light beam to form a reflected beam, • an actuator module (6) comprising at least one magnet (20) and at least one electrical line (30) configured to be crossed by an electrical current (i), the at least one electrical line (30) being based on an electrically conductive material (35), the actuator module (6) being configured to drive the second part (S2) of the substrate (S) and of the mirror (10) in rotation by a driving force (FL) generated by an interaction between the at least one magnet (20) and the electrical current (i) crossing the at least one electrical line (30), Characterized in that one of the at least one magnet (20) and the at least one electrical line (30) is arranged on the first part (S1) of the substrate (S), the other of the at least one magnet (20) and the at least one electrical line (30) is arranged on the second part (S2) of the substrate (S) integrally with the mirror (10), and the at least one magnet (20) comprises a stack (2) of at least one bilayer comprising a first sub-layer (3) based on an antiferromagnetic material and a second sub-layer (4) based on a ferromagnetic material, the stack (2) being magnetized according to at least one magnetization direction (M). Reflective device (1) according to the preceding claim, wherein the at least one magnet (20) and the at least one electrical line (30) are separated by a shortest distance g between the at least one magnet (20) and the at least one electrical line (30), the distance g being greater than or equal to 500 nm and less than or equal to 7 pm, preferably less than or equal to 5 pm.

3. Reflective device (1) according to any one of the preceding claims, in which the second sub-layer (4) based on a ferromagnetic material has a thickness e4 of between 2 nm and 50 nm, preferably between 10 nm and 50 nm.

4. Reflective device (1) according to any one of the preceding claims, in which the stack (2) of the at least one magnet (20) has a thickness of between 700 nm and 5 pm, preferably between 900 nm and 2 pm, and more preferably still equal to 1 pm.

5. Reflective device (1) according to any one of the preceding claims, wherein the stack (2) of the at least one magnet (20) comprises N superimposed bilayers, N being an integer between 10 and 50.

6. Reflector device (1) according to any one of the preceding claims, wherein the actuator module (6) is configured so that two driving forces are exerted on the second movable part (S2) of the substrate (S), said forces being in opposite directions to each other: • the actuator module (6) comprising at least two magnets (20), the at least one electrical line (30) being arranged on the second movable part (S2) of the substrate (S) in a manner integral with the mirror (10), the at least two magnets (20) being respectively arranged on the first part (SI) on either side of the at least one electrical line (30) relative to the axis of rotation of the mirror (10), or • the actuator module (6) comprising at least two electrical lines (30), the at least one magnet (20) being arranged on the second movable part (S2) of the substrate (S) in a manner integral with the mirror (10),the at least two electrical lines (30) being respectively arranged on the first part (SI) of the substrate (S) on either side of the at least one magnet (20) relative to the axis of rotation (Al) of the mirror (10).,

7. A reflective device (1) according to any one of claims 1 to 5, wherein the actuator module (6) is configured so that two driving forces are exerted on the second movable part (S2) of the substrate (S), said forces being in opposite directions to each other, the module comprising at least two magnets (20), the at least one electrical line (30) being arranged on the second movable part (S2) of the substrate (S) in a manner integral with the mirror (10), the at least two magnets (20) being respectively arranged on the first part (SI) on either side of the at least one electrical line (30) relative to the axis of rotation (Al) of the mirror (10), in which the second movable part (S2) of the substrate (S) has a recess (8) around which the at least one electrical line (30) forms a loop, the reflector device (1) further comprising a third magnet (20) integral with the first part (SI) of the substrate (S) and arranged in the recess (8).

8. A reflective device (1) according to any preceding claim, wherein the mirror (10) surmounts one of the at least one magnet (20) and the at least one electrical line (30).

9. Reflective device (1) according to any one of the preceding claims, in which the at least one magnet (20) comprises a plurality of sub-magnets (25) juxtaposed with each other, each sub-magnet (25) being bar-shaped and comprising the stack (2) of at least one bilayer.

10. Reflector device (1) according to the preceding claim, in which the sub-magnets (25) have directions of magnetization (M) distinct from each other.

11. Method for manufacturing the reflective device (1) according to any one of the preceding claims, the method comprising: • a provision of a substrate (S), • a formation of the actuator module (6) on the upper face (Sa) of the substrate (S), the formation comprising: • a deposition on the upper face (Sa) of the substrate (S) of a stack (2) of at least one bilayer comprising a first sub-layer (3) based on an antiferromagnetic material and a second sub-layer (4) based on a ferromagnetic material, superimposed on the first sub-layer (3), • a heat treatment of the stack (2) deposited under application of a magnetic field (B) so as to magnetize the stack (2) according to at least one magnetization direction (M), • a deposition of an electrically conductive material (35) on the upper face (Sa) of the substrate (S), so as to form the at least one electrical line (30), • a deposition of a mirror (10) on the upper face (Sa) of the substrate (S), • at least one etching of the substrate (S) so as to form a first part (SI) and a second part (S2) movable relative to the first part (SI) around at least one axis of rotation (Al), the deposits and the etching being configured together so that the mirror (10) is deposited on the second part (S2) of the substrate (S), one of the at least one magnet (20) and the at least one electrical line (30) is arranged on the first part (SI) of the substrate (S),the other of the at least one magnet (20) and the at least one electrical line (30) is arranged on the second part (S2) of the substrate (S).,

12. A method of manufacturing the reflective device (1) according to the preceding claim, wherein the ferromagnetic material is based on CoFe, and the antiferromagnetic material is based on PtMn or IrMn.

13. Method of manufacturing the reflective device (1) according to any one of the two preceding claims, in which the heat treatment of the stack (2) is carried out at a temperature greater than or equal to 265°C, preferably for a duration greater than or equal to 1 hour.

14. A method of manufacturing the reflective device (1) according to any one of the three preceding claims, wherein the intensity of the magnetic field (B) applied during at least part of the heat treatment is greater than or equal to 1 T.

15. A method of manufacturing the reflective device (1) according to any one of the four preceding claims, wherein the formation of the actuator module (6), further comprises: • an etching of the stack (2) deposited so as to form two distinct first magnets (20), separated by a space exposing the internal sides of the two first magnets (20) and the upper face (Sa) of the substrate (S),

16. A method of manufacturing the reflective device (1) according to the preceding claim, wherein the formation of the actuator module (6) further comprises: • depositing a layer of resin (50) on the first two magnets (20) so as to cover the surface and the internal flanks of the first two magnets (20) and to define a pattern intended for the formation of the at least one electrical line (30) between the first two magnets (20), • depositing the electrically conductive material (35) in the pattern defined in the previous step, to form the at least one electrical line (30), • removing the layer of resin (50) after the deposition of the electrically conductive material (35).

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