Photonic device comprising a microtube electro-optical interconnector

Abstract

A photonic device (10) is proposed, comprising an emitting component (100) configured to emit at least one emission signal (S1) including an optical signal component, a receiving component (200), and an interconnecting component (300) between the emitting component (100) and the receiving component (200). The interconnecting component (300) includes at least one microtube (310) adapted to transmit the optical signal component from the emitting component (100) to the receiving component (200). A microtube (310) includes a wall (314) and an internal medium (312) adapted to propagate the optical signal component, surrounded by the wall of the microtube. The wall (314) is adapted to separate the internal medium (312) from an ambient medium (40) in which the photonic device (10) is immersed. [Fig. 1]

Description

Title of the invention: Photonic device comprising a microtube electro-optical interconnector technical field

[0001] The present invention relates generally to the field of photonic interconnections, and in particular to a photonic device comprising an electro-optical interconnector obtained from at least one micro-tube adapted to transmit at least one optical component of a signal, as well as a method for manufacturing such a device.

[0002] Photonic interconnects are commonly used in information acquisition, transmission and processing applications in integrated circuits and photonic integrated circuits, in order to improve their performance and packaging.

[0003] In existing photonic interconnect systems, it is known to fabricate holes in substrates commonly used in microelectronics. These holes, also called vias, can be of the 'TSV' type (acronym for 'Through Silicon Vias') or 'TGV' type (acronym for 'Through Glass Vias'). These holes can be fabricated to form light guides with optical properties adapted to a specific application and the wavelengths used, as described in US patent 10197730 B1 or in patent application WO 2019 / 048653 AL

[0004] However, known photonic interconnect solutions have high manufacturing costs and do not take into account the low tolerance of optical signals to misalignment. This is particularly the case for the device described in the article “3D optical coupling techniques on polymer waveguides for wafer and board level integration” by S. Lüngen et al., IEEE 67th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA, 2017, pp. 1612-1618, in which the vias are associated with mirrors to direct the light, making the device extremely complex from a technological point of view and not very robust.

[0005] These solutions may also exhibit parasitic optical communications (or optical leakage) between the different vias of the same interconnector, thus generating an effect known as 'crosstalk' (or 'diaphony' according to Anglo-Saxon terminology).

[0006] The problem relating to optical alignments was studied in the article “Optical Vertical Interconnect and Integration Based on Silicon Carrier” by F. Liu et al., 13th International Conference on Electronic Packaging Technology & High Density Packaging, Guilin, China, 2012, pp. 97-100, in which the photonic interconnector comprises an optical fiber network. This article proposes an approach in which each fiber is inserted into a via, so that the vias act more as "mechanical guides" than as "light guides." This also results in limited miniaturization capabilities for the photonic device.

[0007] The problem of optical crosstalk was addressed in US patent application 2020 / 0235038 A1, in which the fabrication of the photonic interconnector includes etching operations to form cavities between the TSV or TGV structures so as to optically isolate them from each other. The fabrication also includes an operation of applying a cavity-sealing material from a heterogeneous material epitaxy, requiring high annealing temperatures. However, such solutions implement considerably complex fabrication processes, associated with very expensive microelectronic technologies.

[0008] There is thus a need for an optical interconnector to improve the transmission performance of optical signals between a transmitter and a receiver, taking into account, in particular, the low tolerance of photons to misalignment, as well as for an improved manufacturing process for a resulting photonic device. Summary of the invention

[0009] The present invention improves the situation by proposing a photonic device comprising an emitting component, configured to emit at least one signal comprising an optical signal component, a receiving component, and an interconnecting component between the emitting component and the receiving component. The interconnecting component comprises at least one microtube adapted to transmit the optical signal component from the emitting component to the receiving component, and at least one microtube comprising a wall and an internal medium adapted to propagate the optical signal component, surrounded by the wall of the microtube, the wall being adapted to separate the internal medium from an ambient medium in which the photonic device is immersed.

[0010] In embodiments, the photonic device may include at least one emitting connection element configured to connect the emitting component and one end of a microtube.

[0011] The photonic device may include at least one receiving connection element configured to connect the receiving component and one end of a microtube.

[0012] Advantageously, the at least one emission signal may further comprise an electrical signal component, the wall of a microtube comprising at least one metallic part configured to propagate the electrical component of the signal from the transmitting component to the receiving component.

[0013] According to certain aspects of the invention, the interconnecting component may further comprise an intermediate substrate comprising at least one micro-via in association with each micro-tube, the at least one micro-via being arranged to transmit the optical signal component from the transmitting component to the receiving component.

[0014] The at least one emitted signal may further include an electrical signal component, and advantageously, the at least one micro-via may include a metallic wall configured to propagate the electrical signal component from the emitting component to the receiving component.

[0015] In embodiments, the at least one microtube may include a filling material chosen to optimize the propagation of the optical component of the signal to be transmitted.

[0016] The at least one micro-via may include a filling material chosen so as to optimize the propagation of the optical component of the signal to be transmitted.

[0017] The dimensions of the interconnecting component can be on the order of a few micrometers to a few tens of micrometers.

[0018] In some embodiments, the interconnecting component may further include a photonic interposer, the at least one microtube extending longitudinally between the emitting component and the photonic interposer, and / or between the photonic interposer and the receiving component.

[0019] The present invention also proposes a method for manufacturing the photonic device. The method comprises the steps of:

[0020] - prepare a transmitter component capable of emitting at least one transmission signal including an optical signal component, and preparing a receiver component,

[0021] - fabricating an interconnecting component comprising at least one microtube, and

[0022] - assemble the interconnecting component between the emitter component and the receiving component;

[0023] The process includes the manufacture of at least one microtube, a microtube being capable of transmitting said optical signal component from the emitting component to the receiving component, the at least one microtube comprising a wall and an internal medium capable of propagating the optical signal component, surrounded by the wall of the microtube, the wall separating the internal medium and an ambient medium in which the photonic device is immersed.

[0024] In embodiments, the assembly step may include connecting the emitting component and / or the receiving component to one end of a microtube by means of at least one emitting connection element and / or at least one receiving connection element, the connection comprising a cold insertion of at least one micro-tube of the interconnecting component into at least one transmitting and / or receiving connection element.

[0025] Advantageously, the manufacturing step of the interconnecting component may include:

[0026] - the supply of at least one supporting substrate,

[0027] - the fabrication of at least one micro-tube, on a substrate support face support,

[0028] - the implementation of at least one etching of the substrate support in such a way perpendicular to form at least one micro-via, from a rear face of the support substrate to the support face, at least one etching being carried out so as to open onto the inside of at least one micro-tube.

[0029] The at least one emitted signal further includes an electrical signal component, and the manufacturing step of the interconnecting component may include a deposition of a metallic layer on the wall of a microtube such that the wall includes at least one metallic part capable of propagating the electrical signal component from the emitting component to the receiving component.

[0030] Embodiments of the invention thus provide a photonic interconnector comprising at least one microtube enabling the improvement of optical signal transmission performance between a transmitter and a receiver, via low-loss data transport.

[0031] They also provide a dual-function parallel interconnection solution enabling the transmission between substrates of so-called 'electrical' information and so-called 'optical' information.

[0032] The embodiments of the invention advantageously provide an affordable solution in terms of cost, the manufacture and assembly of the photonic interconnector being particularly compatible with large-scale manufacturing, the unit cost of a micro-tube being economically inexpensive.

[0033] The fabrication of micro-tube matrices, on a microelectronic platform for example, makes it possible to guarantee the formation of objects in high density (with very small pitch) and at micrometric dimensions, ultimately generating dense and compact photonic devices for parallel transmission of data of a large amount of electro-optical information and without cross talk.

[0034] The embodiments also facilitate and accelerate the manufacturing process for such a device. Cold insertion assembly also ensures the electronic integrity of the device components, while compensating for significant flatness defects between the components to be assembled. This cold assembly also allows for precise alignment of the Components are positioned facing each other, avoiding constraints related to differences in the coefficient of thermal expansion (CTE) between different materials forming the components to be assembled. Such constraints can be particularly significant in manufacturing processes using temperature-controlled (or high-temperature) assemblies.

[0035] The embodiments advantageously provide high-performance devices combining the use of microtubes and TSVs, or allowing coupling to pre-established waveguide networks. Description of the figures

[0036] Other features, details and advantages of the invention will become apparent from the description made with reference to the accompanying drawings given by way of example.

[0037] [Fig.1] Fig.1 is a diagram representing a photonic device, according to embodiments of the invention.

[0038] [Fig.2] [Fig.2] shows diagrams 2[a] and 2[b] representing a component emissive, according to embodiments of the invention.

[0039] [Fig. 3] [Fig. 3] shows diagrams 3[a] and 3[b] representing a component receiver, according to embodiments of the invention.

[0040] [Fig.4] [Fig.4] shows diagrams 4[a] and 4[b] representing a microtube of a interconnection component, according to embodiments of the invention.

[0041] [Fig.5] Fig.5 is a schematic representation of a photonic device, according to embodiments of the invention.

[0042] [Fig.6] Fig.6 is a schematic representation of a photonic device, according to embodiments of the invention.

[0043] [Fig.7] Fig.7 is a schematic representation of a photonic device, according to embodiments of the invention.

[0044] [Fig.8] [Fig.8] shows diagrams 8[a] and 8[b] representing a micro-via of a interconnection component, according to embodiments of the invention.

[0045] [Fig.9] Fig.9 is a schematic representation of a photonic device, according to embodiments of the invention.

[0046] [Fig. 10] The [Fig. 10] is a flowchart representing the steps of a process of manufacturing a photonic device, according to embodiments of the invention.

[0047] [Fig. 11] Fig. 11 shows flowcharts 11[a] and 11[b] representing sub-steps of the manufacturing process of a photonic device, according to embodiments of the invention.

[0048] [Fig. 12] The [Fig. 12] is a flowchart representing sub-steps of the process of manufacturing a photonic device, according to embodiments of the invention.

[0049] [Fig. 13] The [Fig. 13] shows diagrams 13[a] and 13[b] representing an interconnecting component during manufacturing, according to embodiments of the invention.

[0050] [Fig. 14] The [Fig. 14] shows diagrams 14[a] and 14[b] representing an interconnecting component during manufacturing, according to embodiments of the invention.

[0051] [Fig. 15] The [Fig. 15] shows diagrams 15[a] and 15[b] representing an interconnecting component during manufacturing, according to embodiments of the invention.

[0052] [Fig. 16] The [Fig. 16] represents diagrams 16[a] and 16[b] representing an interconnection component during manufacturing, according to embodiments of the invention.

[0053] Identical reference numerals are used in the figures to designate identical or analogous elements. For clarity, the elements shown are not to scale.

[0054] Furthermore, in the remainder of the description, unless otherwise indicated, the terms "approximately" and "generally" mean "within 10%". Detailed description

[0055] Fig. 1 schematically represents a photonic device 10 comprising an emitter component 100, a receiver component 200 and an interconnection component 300 between the emitter component 100 and the receiver component 200, according to embodiments of the invention.

[0056] The photonic device 10 (also called a 'photonic interconnect device', 'transmission device', or simply 'device') is configured to propagate information by transmitting optical signals (or photonic signals) from an optical source to an optical receiver. Such a device can be implemented, for example, but without limitation, as a high-speed vertical data transfer interconnect device, or as a planar transceiver device (called a 'transceiver' in English), enabling the conversion or communication of optical and / or electro-optical signals. The photonic device 10 can be integrated into a system 1, for example, with other chips, or with other elements of discrete circuits, integrated circuits, and / or signal processing devices.System 1, comprising the photonic device 10, can be used in numerous applications, such as information acquisition, transmission, and processing applications. System 1 can be, for example and without limitation, a motherboard used in telecommunications systems, imaging systems, industrial systems (cybersecurity or manufacturing, for example), banking or tax systems, or computing systems.

[0057] In the remainder of the description, it will be considered for the sake of simplification that the term "signal" may refer to an optical signal and / or an electro-optical signal.

[0058] An electro-optical signal comprises an optical signal component and an electrical signal component, such that an electro-optical signal jointly carries information referred to as 'optical information' and information referred to as 'electrical information'. Similarly, an optical signal comprises only an optical signal component, that is to say, an optical signal carries only optical information.

[0059] Furthermore, as used herein, an "optical signal" refers to a continuous wave or results from one or more pulses of light, incoherent or coherent, originating from an optical source (or emitting optical source), such as a laser beam. The electromagnetic wave (or beam) carrying the optical signal is characterized, in particular, by a given wavelength 2 (i.e., relative to a specific optical frequency band or range of optical frequencies). The electromagnetic wave may also be characterized by a given polarization and phase. An optical frequency band corresponds to a range of optical frequencies. An optical frequency band may correspond to wavelengths in the infrared (IR) range.For example, and without limitation, an optical frequency band can correspond to wavelengths of 850 nm, 1300 nm, or wavelengths typically between 1530 nm and 1565 nm (e.g., 1550 nm). Such an optical frequency band, defined as near-infrared or mid-infrared, may be chosen because of the harmlessness of an IR signal to the eye and / or the ease of generating such a signal. An optical frequency band can also correspond to wavelengths in the visible spectrum. For example, and without limitation, an optical frequency band can correspond to wavelengths of 450 nm, 532 nm, or 632 nm. Such a visible optical frequency band may be chosen in cases of high-speed optical information transmission.

[0060] The emitting component 100 (also called the 'photonic emitting component', 'source component', 'emissive substrate', or 'emissive matrix') may comprise one or more emission zones 102 of a signal denoted Sb according to embodiments of the invention. Advantageously, the emitting component 100 may comprise a plurality N of emission zones 102-n configured to each emit a signal Sin, 'n' being the index corresponding to the nth emission zone of the emitting component 100. The index 'n' is therefore an integer between 1 and N, the value of N being an integer greater than or equal to 1.

[0061] Furthermore, the receiver component 200 (also called the 'receiver photonic component', 'receiver component', 'receiver substrate', or 'receiver matrix') may comprise one or more reception zones 202 for a signal denoted S2, according to embodiments of the invention. Advantageously, the receiver component 200 may comprise a plurality M of reception zones 202-m, each configured to receive a signal Sim, 'm' being the index corresponding to the i-th reception zone of the receiver component 200. The index 'm' is therefore an integer between 1 and M, the value of M being an integer greater than or equal to 1.

[0062] In the example of [Fig.1], the transmitter 100 comprises a transmission zone 102 and the receiver 200 comprises a single reception zone 202.

[0063] Advantageously, the transmission device 10 can, for example, be defined in a coordinate system (X,Y,Z). The emitting component 100 can generally have a planar structure, defined in the (X,Y) plane, associated with the (X,Y,Z) coordinate system of the device, and orthogonal to the Z-axis. Thus, the emitting component 100 can generally extend in the (X,Y) plane. In particular, the emitting component 100 can comprise a first face 104 (also called the 'emitting face') and a second face 106 opposite the first face 104. The first and second faces can be substantially parallel to each other and defined in the (X,Y) plane as shown in [Fig. 1]. The first and second faces can be connected by an edge 108, such an edge being of small width compared to the length of the component 100 along the Y or X axis. The first and second faces of the emitting component 100 can have any geometric shape and variable dimensions in the (X,Y) plane.

[0064] The receiving component 200 may have a substantially planar structure and generally extend in the (X,Y) plane. The receiving component 200 may comprise a first face 204 (also called the 'receiving face') and a second face 206 opposite the first face 204. The first and second faces may be substantially parallel to each other, defined in the (X,Y) plane, and connected by an edge 208, such an edge being of small width compared to the length of the component 200 along the Y or X axis. The first and second faces of the receiving component 200 may have any geometric shape and variable dimensions in the (X,Y) plane.

[0065] Figure 2 shows two diagrams 2[a] and 2[b], respectively in the (X,Z) plane and in the (X,Y) plane, of the emitting component 100, according to embodiments of the invention. In the embodiments of Figure 2, the emitting component 100 comprises a plurality of N emission zones 102-n. Each emission signal Si n originating from an emission zone 102-n can be emitted in a direction of signal propagation generally parallel to the normal Z axis of the emitting component 100.

[0066] The optical component of an optical or electro-optical emission signal Si n to be transmitted can be associated with an optical emission frequency band denoted n. In the case of a transmission device 10 associated with a plurality of emission zones 102-n, the optical components of the emission signals Sin can be associated with a single frequency band or alternatively with several distinct frequency bands.

[0067] A 102-n emission zone can be separated from another 102-(n + 1) emission zone by a separation distance, denoted d(n,n+1). Such a separation distance d(n>n+1) (also called 'spacing') can be defined from the geometry or distribution configuration of the different zones and at least a minimum separation distance between emission zones. The distances d(n>n+1) can be on the order of a few micrometers to a few hundred micrometers.

[0068] Alternatively, the distribution of emission zones can be determined according to a repetition step (or 'pitch' according to the corresponding Anglo-Saxon terminology) which can be defined from the separation distance d( n> n+ij for example.

[0069] According to some embodiments, the plurality of emission zones 102-n can be arranged in a regular matrix configuration in the (X,Y) plane on the emission face 104 of the emitting component 100, as shown by example in diagrams 2[a] and 2[b] of [Fig. 2]. This regular matrix configuration can be defined by a single separation distance d(n > n+1) between the different emission zones, considered two at a time, of the emitting component 100. The regular matrix configuration for the spatial distribution of emission zones 102-n can have any geometric structure.

[0070] Alternatively, the positions of the emission zones 102-n can be arranged independently of each other, according to a non-regular, pseudo-random, or even random distribution of emission zones. For example, and without limitation, a non-regular distribution of the plurality of emission zones can correspond to an emission component 102 comprising at least a first set of emission zones, defined according to a first zone spacing d[(n>n+i), and a second set of emission zones, defined according to a second zone spacing d2(n>n+i). For example, the first set can correspond to denser emission zones than the second set, the first spacing then being equal to a value less than the second spacing. Such an irregularity in the distribution of emission zones in the (X,Y) plane is applied in the case of using emission zones of different natures (i.e., in the case of hybrid sources). For example, the first set of emission areas may correspond to sources from a CMOS driver substrate, while the second set of emission areas may correspond to emissive elements added (a posteriori) to this same driver substrate to form the emission component 102. According to this example, the optical sources of a CMOS chip and the emissive elements may, for example, be of different sizes, and the different area spacings between the two sets may be determined so that the density of the sources of the first set is equivalent to the density of the sources of the second set.

[0071] In certain embodiments, an emission zone 102-n (or 102) may include an 'integrated' emission source. Such an emission source may be integrated into the component 100 during the fabrication of the emitting substrate. The emission source may, in particular, include an optical source configured to emit the optical component of a Sin signal associated with the emission zone 102-n. The optical source of the integrated emission source may be, for example and without limitation, a micro LED (also denoted 'mLED' or 'pLED'), a mini LED, an OLED, or any other light or laser emission source. The optical source of the integrated emission source can also be a VCSEL optical source (acronym for 'Vertical-Cavity Surface-Emitting Lasers'), configured to emit an optical signal with a wavelength of 2 typically equal to 850 nm.

[0072] In embodiments, an integrated emission zone 102-n of the emission component 102 can be configured to emit the electrical component of a Sin signal. For example, an integrated emission zone 102-n may include an electrical source element, such as an electrically conductive pad, located near (i.e., positioned close to) the integrated optical source. The electrical component of a Sin signal can then be generated to pass from the electrical source element to the receiving component 202 (via a microtube). Furthermore, at least a portion of the electrical component of a Si signal can be used as a localized power supply to power the integrated optical source. For example, and without limitation, on a CMOS chip or on a photonic interposer, microLED arrays or VCSEL optical source arrays can be driven by hybridization, i.e., by hybrid optical and electrical signals.

[0073] Those skilled in the art will readily understand that the expression "electrical component of an electro-optical signal" refers to a bias voltage adapted to supply optical sources or to be transmitted to a receiving component 202. Furthermore, such an electrical component can be adapted to carry a electrical information from the transmitting component 102 to the receiving component 202.

[0074] In other embodiments, the emitting component 100 may include one or more optical emission sources 110 referred to as 'remote' (not shown in the figures). In such embodiments, the emitting component 100 may be equipped with an array 112 of optical waveguides (not shown in the figures) connecting the optical emission source(s) 110 to the emission zone 102 of the emitting component 100, if a single emission zone is used, or to at least a portion of the emission zones 102-n of the emitting component 100, if several emission zones are used. A remote optical emission source 110 (in and / or on the emitting substrate, for example) is configured to emit the optical component of the signal(s) Sin propagating through the optical waveguide array 112 to the emission zones. The optical waveguide array 112 can also be a planar array extending substantially in the (X,Y) plane.

[0075] Advantageously, the transmitter component 100 can include one or more electrical emission sources 114 (not shown in the figures) and be equipped with a network 116 of electrical connections (not shown in the figures) electrically linking the electrical emission source(s) 114 to the emission zone 102 or to the emission zones 102-n of electro-optical signals Sin.

[0076] Furthermore, at least a part of the electrical component of an electro-optical signal Sin to be emitted by an emission zone 102-n can correspond, for example and without limitation, to an electrical supply signal (i.e. electric current) adapted to power and / or drive an integrated optical source of the emission zone 102-n.

[0077] An emission zone 102-n can be characterized by a specific shape geometry defined in the (X,Y) plane. An emission zone 102-n can also be characterized by a quantity denoted g[n relating to the zone size on the emission face 104. The shape geometry (also referred to here as 'emission geometry') of a zone, as well as its associated quantity gln, can depend on the nature of the emission zone 102-n used (i.e., the technological choice and / or the integrated or deferred implementation used for the emission sources). For example, the geometry of the emission sources 102-n (also referred to as 'emission geometry'), on the face 104, can be circular, as shown in diagram 2[b] of [Fig. 2]. In the case of a circular emission geometry, the quantity gln can correspond to the diameter of the circular shape representing the emission source.A person skilled in the art will readily understand that the invention is not limited to circular emission geometries and may include other geometric shapes such as, for example and without limitation, a square, rectangular, triangular, elliptical emission geometry. Trapezoidal, hexagonal, polygonal, etc. The size(s) gln associated with the emission zones of the emitting component 100 can be, for example, on the order of a few micrometers to a few hundred micrometers.

[0078] Advantageously, the emitting component 100 may comprise a material 118, referred to as the 'emission support material', compatible with the integration processes of signal emission sources (of the integrated or deferred type) and / or with the processes associated with microelectronic manufacturing. For example, and without limitation, the emission support material 118 may be any semiconductor material such as, for example, a wafer or a portion of a wafer, the wafer being made of silicon, germanium, gallium arsenide (GaAs), indium phosphide (InP), crystalline silicon, or others. An emission support material 118 may also be formed from any non-semiconductor material such as, for example, and without limitation, glass, Pyrex, or ceramics. Such a non-semiconductor material may advantageously be used in embodiments where the emission sources 110 are deferred.

[0079] Figure 3 shows two diagrams 3[a] and 3[b], respectively in the (X,Z) plane and in the (X,Y) plane, of the receiver component 200, according to embodiments of the invention. In the embodiments of Figure 3, the receiver component 200 comprises a plurality of M receiver zones 102-m.

[0080] Each receiving zone 202-m of the receiving component 200 is associated (or connected) to at least one specific transmitting zone 102-n of the transmitting component 100.

[0081] The receiving zones 202-m of the receiving component 200 are adapted to each receive an S2m signal from a direction substantially parallel to the normal axis Z (perpendicular to the (X,Y) plane).

[0082] The optical component of a received S2 m signal (optical or electro-optical) can be associated with an optical frequency band in reception, denoted 22 m. In the transmission device 10, the optical components of the S2 m signals can be associated with a single frequency band, or alternatively with several distinct frequency bands.

[0083] A receiving zone 202-m can be separated from another receiving zone 202-(m+1) by a separation distance d(. Such a separation distance d( (corresponding to a 'spacing') can be defined according to the distribution of the zones, starting from a minimum separation distance between receiving zones. In some embodiments, the separation distance can be on the order of a few micrometers to a few hundred micrometers. In particular, the distance d( can be equal to an associated distance d^i, corresponding to an emitting zone 102-n.

[0084] The receiving zones 202-m can, for example, be arranged in a regular matrix configuration on the receiving face 204 of the receiving component 200, as shown in the example of diagrams 2[a] and 2[b] of [Fig.2]. Such a regular matrix configuration for zone distribution can have any suitable geometric structure.

[0085] Alternatively, the reception zones 202-m can, for example, be arranged in a non-regular manner (i.e., according to variable zone spacings). For example, and without limitation, a non-regular distribution of the plurality of reception zones can correspond to a reception component 202 comprising at least a first set of reception zones, defined according to a first zone spacing, and a second set of reception zones, defined according to a second zone spacing.

[0086] In certain embodiments, the receiving area 202-m (or 202) may include a photodetector component configured to detect the optical component of an optical and / or electro-optical signal S2 m to be received. For example, and without limitation, such a component may be a photodiode or any other photonic sensor, said to be 'integrated' during the fabrication of the receiving substrate.

[0087] Advantageously, the electrical component of an electro-optical signal S2 m received by a receiving zone 202-m can correspond to electrical information to be transmitted to the receiving component 200. Alternatively, such a component can correspond to an electrical supply signal (i.e., electric current) suitable for powering and / or driving the photo-detector component of the zone 202-m.

[0088] In exemplary embodiments, the receiver component 200 may include one or more acquisition units 210 configured to acquire the optical component of the received signal(s) S2. The receiver component 200 may further be equipped with an array 212 of optical waveguides (not shown in the figures) connecting a receiving area 202-m or at least a portion of the receiving areas 202-m to the acquisition units 210 (not shown in the figures), referred to as 'remote', of the receiver component 200. The receiving waveguide array 212 may be a planar array extending substantially in the (X,Y) plane.

[0089] In embodiments, the transmitter component 100 and / or the receiver component 200 equipped with optical waveguide arrays can be discrete circuits, photonic and / or electrical chips or integrated circuits, or passive or active interposer circuits.

[0090] In some embodiments, the electrical component of an electro-optical signal can be used to drive wavelength modulation, in transmission, propagation and / or reception of the optical component of the signal.

[0091] A receiving zone 202-m can be characterized by a specific geometry defined in the (X,Y) plane and by a quantity denoted g2 m relating to the size of the receiving zone on the receiving face 204. Such a geometry, called the 'receiving geometry', and the associated quantity g2 m may depend, in particular, on the nature of the receiving zone used (i.e., the technological choice and / or the integrated or deferred implementation of the receiving zone). For example, and without limitation, the geometry of a receiving zone may be circular in the (X,Y) plane, as shown in diagram 3[b] of [Fig. 3], the quantity g2 m then corresponding to the diameter of the circular shape.Those skilled in the art will readily understand that the geometry of the receiving zones 102-m is not limited to a circular shape and can include any other suitable geometric shape such as, for example, but without limitation, a square, rectangle, triangle, elliptical, trapezoidal, hexagonal, polygonal shape, etc. In some embodiments, the size of the receiving zone g2 m can be on the order of a few micrometers to a few hundred micrometers.

[0092] Advantageously, the receiver component 200 may include a material 214, referred to as the 'receiver support material', compatible with the integration processes of photodetector components and / or signal acquisition units (integrated or decoupled type) and / or with the processes associated with microelectronic manufacturing, for example, using hybridization tools available in microelectronic packaging technologies. In particular, the receiver support material 214 may be any suitable semiconductor material such as, for example, a wafer or part of a wafer, the wafer being made of silicon, germanium, gallium arsenide (GaAs), indium phosphide (InP), crystalline silicon, or other materials. A receiver support material 214 may also be formed from any non-semiconductor material such as, for example, glass, Pyrex, or ceramics.Such a non-semiconductor material can be advantageously used in embodiments where the acquisition units are relocated.

[0093] The signal(s) to be transmitted through the transmission device 10 can be emitted from the transmitting face 104 of the transmitting component 100 (signals Sin), and received by the receiving face 204 of the receiving component 200 (signals S2m), the signal(s) having been propagated in the interconnecting component 300 between the two faces 104 and 204 of the device 10.

[0094] The interconnecting component 300 (also called an 'optical interconnector', 'photonic interconnector', or 'electro-optical interconnector') may comprise one or more signal propagation microtubes 310. In some embodiments, the interconnecting component 300 may comprise a plurality P of 310-p microtubes (also called 'interconnecting pads'), "p" being the index corresponding to the pth microtube of the 300 interconnecting component. The index "p" is therefore an integer between 1 and P, and the value of P being an integer greater than or equal to 1.

[0095] Advantageously, a micro-tube 310-p can be configured to transmit at least one signal from an emission zone 102-n of the transmitter component 100 to the receiver component 200 in at least one resulting signal, received by a reception zone 202-m of the receiver component 200.

[0096] In particular, a 310-p signal propagation microtube can be configured to transmit a Sin signal from the emitting zone 102-n of the emitting component 100 to the receiving component 200 as a resulting S2m signal, received by the receiving zone 202-m. The 310-p microtubes can correspond to communication channels carrying optical information between the emitting component 100 and the receiving component 200.

[0097] In the remainder of this description, reference will be made primarily to a number M of receiving zones 202-m equal to the number N of emitting zones 102-n, for the sake of clarity and simplification. In these embodiments, for the sake of simplicity, the subscript "m" associated with a receiving zone 202-m will be considered equivalent to the subscript "n" associated with an emitting zone 102-n. However, those skilled in the art will readily understand that the value of M associated with the number of receiving zones 202-n of the receiving component 200 may differ from the value N defining the number of emitting zones 102-n of the emitting component 100.

[0098] Furthermore, the 310-p micro-tubes may be designated by the reference 310, in the rest of the description or the figures, also as a simplification.

[0099] A signal propagation microtube 310 can be characterized as an optical and / or electro-optical waveguide having two transverse ends and comprising a longitudinal internal medium 312 and a wall 314. The waveguide forming the microtube is adapted to propagate the optical component (i.e., carrying optical information) of a signal through the medium 312, also called the 'propagation medium' or 'transmission medium'. The wall 314 of a microtube is adapted to separate the propagation medium 312 of the microtube from the ambient medium 40 in which the device 10 is immersed.

[0100] The ambient medium 40 of the device 10 can also be a vacuum medium, or a gaseous medium such as air or a neutral gas such as nitrogen or argon. In this case, the device 10 can be integrated into an enclosure designed to control the impact of the medium on the optical and / or mechanical stability of the communicating rays, i.e. that is to say, interconnecting pads between the emitting matrix and the receiving matrix, by controlling, for example, the pressure and temperature parameters within this enclosure. In some embodiments, the ambient medium 40 of the device 10 can also be a solid medium, or a hybrid medium such as a material called an 'underfill material'. Such a material could be, for example, epoxy adhesive.

[0101] Diagrams 4[a] and 4[b] of [Fig. 4] illustrate examples of a microtube 310, schematically and distinctly represented in the ambient medium 40, in perspective view. Such a microtube 310, forming a waveguide, can in particular extend along an axis substantially parallel to the Z axis of the (X,Y,Z) coordinate system associated with the transmission device 10.

[0102] In some embodiments, the propagation medium 312 of a microtube 310 may be a liquid, a vacuum, a gaseous medium such as air or an inert gas such as nitrogen or argon, or a solid or hybrid material (or filling material, sealing material) such as polysilicon, an oxide, or a nitride. The composition of the propagation medium 312 can be determined from at least certain characteristics of the signal to be transmitted.

[0103] In particular, the composition of the propagation medium 312 can be chosen according to the difference in optical index between the propagation medium 312 and the wall 314, so as to optimize the propagation of the optical component (carrying optical information) of the signal to be transmitted, through the waveguide formed by the micro-tube 310, and in particular via the transmission medium.

[0104] In embodiments, the composition of the propagation medium 312 can be chosen according to the composition of the ambient medium 40 of the device 10. In particular, the composition of the propagation medium 312 can be identical to the composition of the ambient medium 40.

[0105] In some embodiments, the propagation medium 312 can be a liquid medium, enabling the device 10 to form a microlens for immersion scanner applications. For example, and without limitation, the propagation medium 312 can be distilled water, deionized water, and / or any liquid suitable for an internal lens function, such that the propagation of the optical signal in this propagation medium 312 is adapted to the need predefined by a designer of the transmission device 10.

[0106] The composition of the propagation medium 312 can further be defined from the optical emission frequency band 2ln of the optical component of a signal Sin emitted by the emission zone 102-n. For example, and without limitation, the composition of the propagation medium 312 can be chosen such that the propagation medium 312 is transparent (i.e., optically transparent) to the optical component of the signal Sin to be transmitted. In this case, the optical frequency band of transmission Ajn of the optical component of the signal Sin entering the medium 312 can be substantially equal (or equivalent) to the optical frequency band of reception A2n of the optical component of the signal S2n propagated through the propagation medium 312. This frequency band matching between the transmitted signal and the resulting signal at the output of the microtube 310 makes it possible to guarantee low attenuation, i.e., low loss, of optical information by transmission in the interconnecting component 300.

[0107] Alternatively, the composition of the propagation medium 312 can be chosen so that this medium has filtering and / or optical shifting functions such that the optical frequency bands of transmission Aln and reception 22n are different (i.e., distinct from each other). An example of a filtering function could be a filtering function applied as a function of the optical index of the chosen composition of the propagation medium 312.

[0108] In one embodiment of the invention, the composition of the propagation medium 312 may have active or variable optical properties depending on changes in the physical state of the device 10 or the interconnecting component 300. The composition of the propagation medium 312 may be chosen, in particular, so that its refractive index can be modified according to changes in thermal and / or ambient conditions. For example, and without limitation, these modifications may allow for the induction of active tunability to the optical frequency bands A1n for transmission and / or A2n for reception, in response to a command to modify the temperature of the ambient medium 40.

[0109] Furthermore, the composition of the propagation medium 312 can be a polarization-rotating transmission medium, or alternatively a polarization-maintaining medium, such that the polarization of the optical component of the emitted signal S[n] is substantially equal (or equivalent) to the polarization of the optical component of the received signal S2n. For example, such a polarization rotation can be generated (or obtained) depending on the optical index of the chosen composition of the propagation medium 312.

[0110] In embodiments, the wall 314 of a micro-tube 310 may comprise a single thickness (or wall), denoted 314A, as illustrated in diagram 4[a] of [Fig.4],

[0111] Advantageously, the wall 314 (or 314A) of a microtube 310 may comprise a single metallic or dielectric thickness. For example, and without limitation, such a wall thickness in [Fig. 4][a] may be composed of tungsten, having low electrical conductivity, or of an oxide material.

[0112] According to certain embodiments, the wall 314 of a microtube 310 may comprise several distinct thicknesses (or walls). In particular, such a wall 314 may comprise at least one dielectric thickness and at least one metallic thickness. For example, and without limitation, a wall 314 may comprise a central dielectric portion 314A, an internal metallic portion 314B, and / or an external metallic portion 314c, each having the shape of a hollow cylinder (i.e., whose bases are rings), with the same axis as the microtube 310, as shown in diagram 4[b] of [Fig. 4]. Each portion 314A, 314B, and 314c has a given thickness (equal to the difference between the external and internal radii of the rings forming the base of each portion). A metallic part 314B or 314c of the wall 314 may be composed of aluminum or gold, for example.A metallic portion 314b or 314c of the wall 314 may also include a so-called 'adhesion layer' (not shown in the figures) attached to the dielectric portion 314A of the wall 314 of the waveguide, which may be composed of titanium or nitrided titanium, for example.

[0113] Internal and / or external metallization of the wall 314 of a micro-tube 310 can allow the propagation (or transmission) of the electrical component of the signals, carrying electrical information, along the metallized wall of the waveguide.

[0114] Thus, the electrical component of a Sin signal originating from a transmitting zone 102-n can be transported from the transmitting component 102 to the receiving component 202 through propagation in the interconnecting component 300, and in particular a microtube 310. A microtube 310 can therefore have a dual function of transporting optical and electrical information. The electrical component of a Sin signal can also be adapted to control certain functionalities of the microtube 310 on which it propagates. For example, and without limitation, active tunability of the optical frequency bands in transmitting 2ln and / or receiving 22n by modifying the optical index of the propagation medium 312-n of a microtube 310-n can be implemented, in response to an electrical control from the electrical component of a Sin signal that passes through the microtube.

[0115] The wall 314 of a microtube 310 can be characterized by an overall wall thickness e31 (difference between the inner and outer radii of the microtube 310 if the microtube has an annular cross-section, for example) which can have a value on the order of a few micrometers to a few tens of micrometers. Such an overall wall thickness 314 can depend on the pitch of the microtube array 310-p in the transmission device 10. Advantageously, the metallic portions 314B and / or 314c of a wall 314 can have a value on the order of a few tens of nanometers to a few hundred nanometers.

[0116] In some embodiments, a microtube 310 (and more particularly its wall 314) can be characterized by a given geometry (called 'transverse geometry') in the (X,Y) plane and by a cross-sectional size g31 relative to the cross-section of the microtube 310 in the (X,Y) plane. The shape of the transverse geometry of the microtube 310 and its size g31 can be determined, in particular, based on the performance of the transmission of an optical and / or electro-optical signal through the waveguide formed by the microtube. Advantageously, the transverse geometry of the waveguide can be annular in the (X,Y) plane, as shown in diagrams 4[a] and 4[b] of [Fig. 4]. Those skilled in the art will readily understand that a microtube 310 is not limited to such transverse geometry shapes and can have other transverse geometry shapes (i.e.The cross-section of the microtube 310 can have other geometric shapes, such as, for example, a square, rectangular, triangular, elliptical, trapezoidal, or any other suitable shape. In the case of an annular transverse geometry of the microtube 310, the cross-sectional size g31 of a microtube can correspond to its internal diameter, for example, as shown in diagrams 4[a] and 4[b] of [Fig. 4]. The cross-sectional size g31 can be on the order of a few micrometers to a few tens of micrometers. The cross-sectional size g31 of the microtubes of the interconnecting component 300 can be defined as a function of the distribution density of the optical sources of the emitting component 100.

[0117] The rest of the description will be made primarily with reference to a micro-tube of annular cross-section as a non-limiting example, in order to facilitate understanding of the invention.

[0118] The composition materials, shapes and different dimensions associated with the microtubes 310 can be chosen so as to obtain optimal mechanical strength of the component 300. For example, the use of oxide material to generate the propagation medium 312 and / or the wall 314 of a microtube 310-p can improve the mechanical bond between the emitting component 100 and the receiving component 200.

[0119] The interconnecting component 300 can comprise a plurality of optical assemblies 50-n, each optical assembly 50-n comprising at least one emitting zone 102, an associated microtube 310 and an associated receiving zone 202 connected to the emitting zone 102 by the microtube 310.

[0120] Fig. 5, Fig. 6 and Fig. 7 schematically represent embodiments of an interconnecting component 300 in a transmission device 10. The interconnecting component 300 may comprise adjacent microtubes 310-p (or groups of microtubes) arranged parallel to each other, extending along an axis substantially parallel to the Z axis.

[0121] It should be noted that a multi-thickness wall 314 formed of a dielectric portion 314a composed of several layers of dielectrics with varying refractive indices, or comprising at least a metallized portion 314B and / or 314c, can advantageously allow for opacification of the waveguide wall. A wall thickness 314 referred to as 'opacifying' increases the resulting difference in refractive indices between the propagation medium 312 and the waveguide wall 314. Such an increase leads to improved propagation of the optical component of the signals in the propagation medium 312, i.e., along a microtube 310, by reducing or preventing optical signal leakage. An opacified wall for a plurality of adjacent microtubes 310-p thus reduces parasitic communication between these different microtubes.The 'crosstalk' effect that can appear in conventional vertical connection devices is therefore significantly reduced by such opacification.

[0122] Furthermore, it should be noted that a single-thickness wall 314 formed from a single dielectric part 314A, generated from a metallic thickness, can advantageously allow opacification of the waveguide wall and thus avoid optical leakage phenomena (i.e. 'crosstalk' effect) between the different optical paths formed by the set of juxtaposed micro-tubes.

[0123] In the examples in Figures 5, 6 and 7, it is assumed that the number M of 202-m receiving zones is equal to the number N of 102-n emitting zones, the index "m" of a 202-m receiving zone being substituted for the index "n" of a 102-n emitting zone.

[0124] In embodiments, the value of P may be equal to the value N corresponding to the number of emission zones 102-n of the emitting component 100 (itself equal to the value M of the number of reception zones of the receiving component 200), as represented by Figures 5, 6 and 7. In this case, the index "p" of a microtube 310-p is assimilated to the index "n" of the associated emission zones 102-n (and therefore to the index "m" of the reception zones 202-m), by way of simplification.

[0125] In particular, [Fig. 5] schematically represents an interconnecting component 300 comprising a plurality N (equal to P) of microtubes 310-n, according to embodiments of the invention, each microtube 310-n being configurable to directly transmit the nth signal Sin from an emission zone 102-n of the transmitting component 100 to the receiving component 200, a resulting nth signal S2-n then being received by the receiving zone 202-n. Each receiving zone 202-n can thus be connected to a corresponding emission zone 102-n, via an associated microtube 310-n. The length of the interconnecting component 300 can then correspond approximately at the height h3 of the 310-n micro-tubes, and may be on the order of a few micrometers to a few tens of micrometers.

[0126] A micro-tube 310-n of the interconnecting component 300 can thus extend longitudinally between the emitting component 100 and the receiving component 200 to optically couple the emitting area 102-n, associated with the micro-tube, to the corresponding receiving area 202-n.

[0127] The arrangement of the microtubes 310-n may have a configuration defined with respect to the arrangement of the transmitting zones 102-n and the receiving zones 202-n. For example, the arrangement of the microtubes 310-n may have a regular matrix configuration in a microtube array. Alternatively, the arrangement of the microtubes 310-n may be defined according to a non-regular distribution of the microtubes. For example, and without limitation, a non-regular distribution of the plurality of microtubes may correspond to an interconnecting component 300 comprising at least a first set of microtubes, defined according to a first microtube spacing, and a second set of microtubes, defined according to a second microtube spacing.

[0128] Advantageously, the arrangement of the micro-tubes 310-n can be determined according to the arrangement constraints of the emission zones 102-n and / of the reception zones 202-n.

[0129] The emission, reception, and transverse geometries of each optical assembly 50-n of the transmission device 10 can advantageously be centered on the same axis, parallel to the Z axis.

[0130] In embodiments where the plurality of emission zones comprises different sets of hybrid sources, the emission component 102 may include an emission face 104, comprising different distinct level sections, as illustrated in [Fig. 6]. In particular, the emission component 102 may include:

[0131] - a first set, corresponding for example and without limitation to sources derived from a CMOS-type chip comprising the 102-n reference emission area shown in [Fig. 6], and

[0132] - a second set of other emitting elements comprising the emission zone of reference 102-(n+l) represented on the [Fig.6].

[0133] The sources in the first set can each have a first size and the emitting elements in the second set can each have a second size, such that the resulting thickness of the emission component 102 (between face 104 and face 106) can be substantially variable from one set to another (i.e., from one emission zone to another). A thickness variable can be equal to at least two values distinct defined respectively by the first and second emission zone sizes.

[0134] A person skilled in the art will readily understand that the receiving component 202 can similarly comprise different sets of receiving areas such that the thickness of the receiving component 202 (between the receiving face 204 and the face 206) can be substantially variable from one set to another (i.e. from one receiving area to another), according to an embodiment not shown in the figures.

[0135] Advantageously, the microtubes of the interconnecting component 300 can then have different heights between the different transmitting and receiving areas of the transmitting device 10. In particular, the interconnecting component 300 can comprise a first set of microtubes and a second set of microtubes, such that the height of the microtubes (between the transmitting face 104 and the receiving face 204) can be substantially variable from one set to the other. For example, the height of the microtubes of the first set of microtubes can be equal to a first value and the height of the microtubes of the second set of microtubes can be equal to a second value distinct from the first value. For example, and without limitation, as illustrated in [Fig.[6], the device 10 may comprise at least a first optical assembly 50-n and a second optical assembly 50-(n+l), and the micro-tube 310-n associated with the first optical assembly 50-n may be characterized by a height h3i of a value less than the height h32 of the micro-tube 310-(n+l) associated with the second optical assembly 50-(n+l).

[0136] The variability in heights of the microtubes of the interconnecting component 300 makes it possible to compensate, during the manufacture of these microtubes, for the variability in thicknesses or levels of the hybrid transmitting components 100 and / or receiving components 200. Such variability in heights of the microtubes also makes it possible to compensate for simple flatness defects of the transmitting components 100 and / or receiving components 200 composed of the same elements, or of hybrid elements.

[0137] In embodiments, an optical assembly 50-n may include a connecting element 116-n associated with the emission zone 102-n of the optical assembly 50-n and configured to connect the emitting component 100 to the interconnecting component 300. A 'transmitting' connecting element 116-n may be arranged on the emitting face 104 at the level of the emission zone 102-n, as illustrated in [Fig.7].

[0138] In some embodiments, an optical assembly 50-n may include a connecting element 216-n, associated with the receiving zone 202-n of the optical assembly 50-n and configured to connect the receiving component 200 to the interconnecting component 300. A 'receiving' connecting element 216-n may then be positioned on the receiving face 204 at the level of the receiving area 202-n, as illustrated in figures 5, 6 and 7.

[0139] Advantageously, a transmitting and / or receiving connecting element 116-n or 216-na has a cross-section that can have any suitable geometric shape in the (X,Y) plane and be characterized by a quantity gn relative to a dimension parameter of the geometric shape of the cross-section of the connecting element in the (X,Y) plane. In particular, the geometric shape and the quantity gn of a connecting element 116-n or 216-n can be chosen according to the shape of the cross-section of the associated microtube 310-n and the dimensions of this cross-section. The geometric shape of the cross-section of a connecting element 116-n and / or 216-n, in the (X,Y) plane, can be the same as the geometric shape (i.e., cross-sectional geometry) of the cross-section of the associated microtube 310-n and be centered on the same axis as the microtube 310-n.A connecting element 116-n and / or 216-n can be arranged between the associated emission zone 102-n and / or respectively the associated reception zone 202-n, on the one hand, and the upper edge and / or respectively the lower edge of the wall 314 of the associated micro-tube 310-n, at its upper and / or respectively lower end.

[0140] In the case where a microtube 310-na has a cylindrical shape, a connecting element 116-n and / or 216-n may have an annular (i.e. ring-shaped) cross-section in the (X,Y) plane adapted to the annular shape of the cross-section of the wall 314 of the microtube so as to be able to be held between the associated emission zone 102-n and / or respectively the associated reception zone 202-n, on the one hand, and the upper edge and / or lower edge of the wall 314 respectively, on the other hand. In such embodiments, a transmitting connection element 116-n and / or 216-n can be centered around the center of the transmitting zone 102-n and / or the receiving zone 202-n respectively, as shown for example in diagrams 2[b] of [Fig.2] and 3[b] of [Fig.3].

[0141] A connecting element 116-n or 216-n can have a cross-section of any geometric shape, adapted to the shape of the cross-section of the micro-tube 310, such as, for example, a square, rectangular, triangular, elliptical, trapezoidal, hexagonal, polygonal shape, etc. A connecting element 116-n or 216-n can have a size on the order of a few micrometers to a few hundred micrometers.

[0142] The arrangement of the different optical assemblies 50-n relative to each other can have any suitable configuration. The different elements (or objects) of the same optical assembly 50-n (which may include the emission zone 102-n, the reception zone 202-n, the micro-tube 310-n, and the connecting element(s) 116-n and 216-n) can be centered around the same axis (axis parallel to the Z axis), this axis being able to pass through the center of the emission zone 102-n and the reception zone 202-n.

[0143] In the example of Figures 5, 6 and 7, the transmission device 10 comprises several optical assemblies 50-n (5 optical assemblies in these examples), each optical assembly comprising an emitting zone 102-n which can in particular be connected to a microtube 310-n by a transmitting connecting element 116-n, and a receiving zone 202-n connected to the microtube 310-n by a receiving connecting element 216-n. A connecting element 116-n and / or 216-n (also called a 'hosting block') can for example be made of a malleable metallic material.

[0144] As used here, the term 'malleable' (or ductile) refers to the ability of a material to withstand stresses without breaking, particularly compressive stresses. For example, and without limitation, a connecting element may be formed at least in part from gold, indium, aluminum, or other materials.

[0145] A connecting element 116-n and / or 216-n ensures the transmission of the optical and / or electro-optical signal in the transmission device 10, within each optical assembly 50-n, at the junction between an emitting zone 102-n and the associated microtube 310-n, and / or between a receiving zone 202-n and the associated microtube 310-n, respectively. Thus, the connecting elements 116-n and 216-n provide optical sealing and, advantageously, electrical contact (or electrical connection) between the junction elements of the device components 10. The connecting elements 116-n and 216-n are therefore electrical and optical sealing elements. The 116-n and 216-n connecting elements are also mechanical connecting elements, the insertion of each micro-tube into at least one receiving stud ensuring mechanical hold between the different components of the device 10.

[0146] In embodiments, the value of P corresponding to the number of microtubes 310-p may be different from the number N of emission zones 102-n of the emitting component 100 (M being equal to N). In such embodiments, each optical assembly 50-n may comprise a plurality of microtubes 310-pk (the index "k" being an integer between 1 and K, K being the number of microtubes 310 per optical assembly 50-n) of the same axis and the same cross-section, arranged between the emission zone 102-n and the reception zone 202-n of the optical assembly 50-n.

[0147] In embodiments, an interconnecting component 300 may comprise a number of microtubes equal to a multiple of N, according to embodiments of the invention. The interconnecting component 300 may comprise a plurality of microtubes subdivided (or intersected) by at least one intermediate substrate 320. In particular, an intermediate substrate 320 of the component 300 may be adapted to delimit two sets of microtubes, on either side of an intermediate substrate. The total number P of microtubes 310 of the transmission device can for example be equal to twice N, as illustrated by [Fig.7]. In the case of [Fig.7], each optical assembly 50-n comprises two microtubes 310-pi and 310-p2(K=2) separated by an intermediate substrate 320 through the interconnecting component 300, and each optical assembly comprises the same number of microtubes 310 (K=2).

[0148] The intermediate substrate 320 may have a generally planar structure, extending in the (X,Y) plane. The intermediate substrate 320 of the interconnecting component 300 may comprise a first face 322 (also called the 'input face'), facing the face 104 of the transmitting component, and a second face 324 (also called the 'output face') opposite the first face 322 and facing the face 204 of the receiving component 200. The first and second faces 322 and 324 of the intermediate substrate 320 may be substantially parallel to each other, defined in the (X,Y) plane, and connected by a lateral edge 326 (in the (Y,Z) plane), as shown in [Fig. 7]. The intermediate substrate 320 may have any suitable geometric shape and dimensions.

[0149] Advantageously, an intermediate substrate 320 of the interconnecting component 300 can be adapted to ensure the transmission of signals (optical and / or electro-optical), between the micro-tubes 310 of the same optical set 50-n (in the case of [Fig.7], between the two micro-tubes 310-pi and 310-p2 of the pair of micro-tubes of each optical set 50-n). The microtubes 310 of the same optical assembly 50-n (microtubes 310-pi and 310-p2 in the case of [Fig.7]) extend along the same axis, substantially parallel to the Z axis. As shown in [Fig.7], the first microtube 310-pi is connected on one side to the emission zone 102-n and on the other side to the input face 322 of the intermediate substrate 320 which is able to receive a signal to propagate in the intermediate substrate 320.The second micro-tube 310-p2 is connected on one side to the output face 324 of the intermediate substrate, through which the signal propagated in the intermediate substrate 320 exits, and on the other side to the receiving area 202-n of the photonic device 10.

[0150] The intermediate substrate 320 may include one or more signal propagation micro-vias (or microholes), according to embodiments of the invention. In particular, the intermediate substrate 320 may include a plurality of N micro-vias 330-n (also called 'interconnection micro-vias'), each micro-via 330-n being associated with an optical assembly 50-n and being configured to transmit the nth signal S3in from the first microtube 310-pide of the optical assembly 50-n to the second microtube 310-p2 of the optical assembly 50-n, in the form of an nth signal S32n resulting from the passage through the intermediate substrate 320.

[0151] The arrangement and configuration of the 330-n micro-vias can be adapted to the arrangement and configuration of the different 50-n optical assemblies.

[0152] Each micro-via 330-n signal propagation in an intermediate substrate 320 can be characterized as an optical and / or electro-optical waveguide comprising a longitudinal medium 332-n and a wall extending along an axis substantially parallel to the Z-axis of the (X,Y,Z) coordinate system associated with the transmission device 10. The waveguide characterizing a micro-via 330-n is adapted to propagate the optical component (i.e., carrying optical information) of a signal through the propagation medium 332-n. The wall of a micro-via 330-n can then be formed by the separation between the propagation medium 332-n and the intermediate substrate 320.

[0153] Schemes 8[a] and 8[b] of [Fig.8] schematically illustrate a micro-via 330-n, arranged in an intermediate substrate 320, according to a perspective view.

[0154] The signal propagation medium 332-n in a micro-via 330-n can be a vacuum, a liquid, a gaseous medium such as air or a neutral gas such as nitrogen or argon, or a solid material (or filling material) such as polysilicon, an oxide, a polymer, or a nitride. Advantageously, the signal propagation medium 332-n in a micro-via 330-n can be substantially identical to the propagation medium 312 of the microtube(s) 310 of the same optical assembly 50-n.

[0155] In some embodiments, a micro-via 330-n may comprise a metallic surface 334-n of a given thickness on the periphery of the waveguide (i.e., wall), as shown in diagram 8[b] of [Fig. 8]. The metallic surface (or wall) 334-n of the micro-via 330-n may have the shape of a hollow cylinder. The metallic surface 334-n of the micro-via 330-n may, for example, be composed of aluminum, copper, or gold and may have a thickness on the order of a few tens of nanometers to a few hundred nanometers.

[0156] In embodiments, the intermediate substrate 320 can be formed from one or more semiconductor materials such as, for example and without limitation, from at least a portion of a wafer made of silicon, germanium, gallium arsenide (GaAs), indium phosphide (InP), crystalline silicon, glass, sapphire, ceramic materials, or other materials. The intermediate substrate 320 can be composed of any type of flat support conforming to microelectronic criteria, such as criteria according to SEMI standards, for example. The height h32 of the micro-vias 320-n (along the Z-axis) is then equal to the height of the intermediate substrate 320 (along the Z-axis). The height h32 of a micro-via 320-n can be, for example, on the order of a few tens of micrometers to a few millimeters.

[0157] In some embodiments, the intermediate substrate 320 can be formed of several intermediate sub-substrates, separated in pairs by an interface 328 (a Interface 328 is thus interposed between two intermediate sub-substrates, as shown in [Fig. 7]. An interface 328 may include, for example, a mounting layer composed of an adhesive that is optically transparent to the optical component of the signals to be propagated along the micro-vias 320-n. This interface 328 may also be formed by polymer bonding, for example, using an epoxy, polyimide, acrylic, or silicone adhesive. Epoxy adhesives may be insulating, conductive, thermally conductive (for favorable heat dissipation), or electrically conductive (to promote both heat dissipation and electrical bonding between two assembled substrates). Alternatively, the intermediate substrate 320 may be formed by metal-type brazing (or metal bonding), that is, by joining sub-substrates using fusible alloys such as those from the tin or indium families.The intermediate substrate 320 can also be formed from an assembly of sub-substrates using hybrid bonding, i.e., via direct bonding without an intermediate bonding layer between two mixed substrate surfaces comprising dielectric parts (e.g., oxide or SiO2) and metallic parts (e.g., copper), by placing the metallic parts of the two surfaces in such a way as to create an electrical connection between the assembled metallic parts. Metallic or hybrid bonding allows the transmission of the electrical component of the signals to be propagated along the 320-n micro-vias (i.e., the transmission of electrical information). In this case, the bonding interface is of substantially negligible thickness compared to the height h32 of the 320-n micro-vias.

[0158] The metallization 334-n of the wall of a micro-via 330-n allows the propagation (or transmission) of the electrical component (carrying electrical information) of the signal along the metallized wall of the micro-via 330-n, through the intermediate substrate 320 of the interconnecting component 300. In addition, such a metallization can also allow an increase in the difference in refractive indices between the transmission medium 332-n and the material of the intermediate substrate 320 so as to improve the propagation of the optical component of the signal through the transmission medium.

[0159] A micro-via 330-n can be characterized by a cross-section having a given geometric shape in the (X, Y) plane and by a quantity denoted g32n relating to a dimension parameter of the cross-section of the micro-via 330-n. Advantageously, the geometric shape of the cross-section of the micro-via 330-n can generally be circular in the (X, Y) plane, as shown in diagrams 8[a] and 8[b] of [Fig. 8]. In this case, the characteristic quantity g32n of a micro-via can correspond to the diameter or the radius of its cross-section, and be on the order of a few micrometers. to a few hundred micrometers. In some embodiments, the characteristic size g32n of a micro-via 330-n can be equal to the characteristic size g3i of the microtube(s) 310 of the same optical assembly 50-n. Alternatively, the characteristic size g32n can be different from the characteristic size g31 in the same optical assembly 50-n. For example, and without limitation, a characteristic size g32n of a micro-via 330-n, greater than a characteristic size g3i of a microtube 310-n positioned upstream of the micro-via 330-n, allows the input beam of the micro-via 330-n to be optically broadened, and in particular the beam size of the signal S3in to be increased. A characteristic quantity g32n of a micro-via 330-n, less than a characteristic quantity g31 of a micro-tube 310-n positioned upstream of the micro-via 330-n, makes it possible to optically focus the input beam of the micro-via 330-n, and in particular to reduce the beam size of the S3i signal.

[0160] In embodiments, the interconnecting component 300 may alternatively comprise a plurality of microtubes subdivided (or interspersed) by at least one transfer unit 340, each unit delimiting two sets of microtubes on either side of the transfer unit 340, as illustrated in [Fig.9].

[0161] In such embodiments using a transfer unit 340, each optical assembly 50-n comprises a plurality of substantially parallel and of the same cross-section but not collinear micro-tubes 310-pk (where k is between 1 and K, K being the number of micro-tubes 310 per optical assembly 50-n), arranged between the emission zone 102-n and the reception zone 202-n of the optical assembly 50-n.

[0162] In the example of [Fig. 9], each optical assembly 50-n comprises two microtubes 310-pi and 310-p2 (K=2) separated by a transfer unit 340 passing through the interconnecting component 300, and each optical assembly comprises the same number of microtubes 310 (K=2). Thus, in the example of [Fig. 9], the number P of microtubes is equal to twice N. The two microtubes 310-pi and 310-p2 of the same optical assembly may advantageously have the same cross-section but be centered on distinct axes parallel to each other (parallel to the Z-axis). In the example of [Fig.9], the axis of the second 310-p2 microtube of a 50-n optical assembly is offset along the X axis from the axis of the first 310-pi microtube of the same optical assembly.

[0163] Similar to an intermediate substrate 320, a transfer unit 340 of the interconnecting component 300 can be adapted to ensure the transmission of signals (optical and / or electro-optical), between separate micro-tubes 310 of the same optical assembly 50-n.

[0164] A transfer unit 340 can comprise a plurality of communication channels 350-n corresponding to a planar or quasi-planar network of waveguides of optical and / or electro-optical wave extending, for example, substantially in the (X,Y) plane. A 340 transfer unit can be, for example, a photonic integrated interposer or a PIC (acronym for 'Photonic Integrated Component'), corresponding to a substrate comprising a plurality of optical elements, one or more of these elements being associated with a photonic function. Each 50-n communication set is associated with a 350-n communication channel of the transfer unit.

[0165] In embodiments, a 350-n communication channel for signal propagation in the transfer unit 340 can be characterized by an optical waveguide 352-n and have two ends 354-n. One end 354-n of a 350-n communication channel can be, for example and without limitation, an integrated lens, or a signal transmission network between the 352-n waveguide characterizing the communication channel and a microtube 310-pi or 310-p2 of the associated optical assembly 50-n. Such 354-n transmission networks can be Bragg gratings, for example, adapted to modify the propagation direction of the optical component of a signal, in particular by transforming the propagation direction along an axis substantially parallel to the Z-axis into a propagation direction along an axis in the (X,Y) plane.

[0166] In the example of [Fig. 9], at its ends, the first microtube 310-pi is, on the one hand, connected to the transmitting area 102-n (on the transmitting face 104), and, on the other hand, connected to the face 342 of the transfer unit 340, i.e., optically connected to one end 354-n of a communication channel 350-n. At its ends, the second microtube 310-p2 is, on the one hand, connected to the face 342 of the transfer unit 340, i.e., optically connected to another end 354-n of a communication channel 350-n, and, on the other hand, connected to the receiving area 202-n (receiving face 204) of the transmission device 10.

[0167] Thus, a micro-tube 310 of an optical assembly 50-n of the interconnecting component 300 can extend longitudinally between the emitting component 100 and the transfer unit 340, and another micro-tube of the same optical assembly 50-n of the interconnecting component 300 can extend longitudinally between the transfer unit 340 and the receiving component 200 to optically couple the emitting area 102-n to the corresponding receiving area 202-m of the optical assembly 50-n.

[0168] In embodiments, a photonic interposer can be equipped with micro-vias (TSV or TGV) to meet specific complex transmission needs between transmitting and receiving components, such as in the case of electrical signal transmissions or optical polarization signals.

[0169] In other embodiments, an interconnecting component 300 may comprise a plurality of microtubes 310, at least one intermediate substrate 320, and / or at least one transfer unit 340. For example, and without limitation, the interconnecting component 300 may comprise at least one first set of microtubes 310 extending longitudinally between the emitting component 100 and the transfer unit 340, and at least two other sets of microtubes 310 extending respectively:

[0170] - between the transfer unit 340 and the intermediate substrate 320, and

[0171] - between the intermediate substrate 320 and the receiving component 200.

[0172] In embodiments where the interconnecting component 300 comprises at least one microtube 310 and a transfer unit 340, the interconnecting component 300 may also include a connection substrate. The connection substrate (not shown in the figures) may have characteristics similar to the intermediate substrate 320 described previously and may, in particular, include at least one micro-via. The connection substrate may be arranged between the transfer unit 340 and the receiving component 200. For example, and without limitation, each optical assembly 50-n of the interconnecting component 300 may include at least one microtube 310 extending longitudinally (along the Z-axis) between the transmitting component 100 and the receiving component 200, via the transfer unit 340 and the connection substrate (placed between the transfer unit 340 and the receiving component 200).One end of the micro-via of the connecting substrate can be optically connected to one end of a communication channel of the transfer unit 340 (connected to face 343), while the other end of the micro-via of the connecting substrate can be connected to a receiving area 202-n (receiving face 204) of the transmitting device 10. In other words, the interconnecting component 300 can include at least one micro-via extending longitudinally between the transfer unit 340 and the receiving component 200.

[0173] In some embodiments, the number N of transmitting zones of the transmitting component 100 may differ from the value of the number M of receiving zones of the receiving component 200 (an embodiment not shown in the figures). For example, an intermediate substrate 320 or a transfer unit 340 of the interconnecting component 300 may include one or more auxiliary optical elements for:

[0174] - divide an optical path (or channel) into two or more optical paths, or

[0175] - combine two or more optical paths into a single optical path.

[0176] Such auxiliary optical elements can be passive or active and in the latter case can be powered and / or driven from an electrical supply signal (i.e. electric current) from an emission zone 102-n. An auxiliary optical element can correspond, for example, to an optical selector or an optical recombiner.

[0177] The fabrication of the transmission device 10 can be carried out using any suitable technologies and tools to form the components of the transmission device 10, whose dimensions are on the micrometer and nanometer scale. The technologies used to fabricate these structures can be integrated circuit production technologies. In particular, the fabrication of the transmission device 10 can be carried out using a process comprising a design phase and a material fabrication phase of the transmission device 10.

[0178] The design phase of the transmission device 10 may include a set of steps to address an analysis of electro-optical simulations and / or the requirements of the system using the transmission device 10 (which may be, for example, a transceiver system or an optical signal conversion system). The design phase of the transmission device 10 may be implemented by computer. For example, the design phase of the transmission device 10 may be implemented using software for simulating and optimizing optical signals transmitted through waveguides and photonic interposers.

[0179] The material manufacturing phase of the transmission device 10 takes into account the results of the design phase previously implemented.

[0180] The [Fig. 10] is a flowchart representing steps in the manufacturing phase of the transmission device 10, according to embodiments of the invention.

[0181] In steps 1200 and 1400, the emitting component 100 and the receiving component are manufactured (or prepared or assembled) separately.

[0182] In step 1600, the interconnecting component 300 is manufactured so as to include at least one micro-tube 310.

[0183] At step 1800, the transmitter component 100 and the receiver component 200 are assembled, via the interconnecting component 300, which provides an initial transmission device 10.

[0184] In particular, the assembly step 1800 to form the transmission device 10 can be carried out in a vacuum chamber or under a controlled atmosphere, so that the ambient medium 40 of the device 10 is a vacuum medium, or a gaseous medium such as air or a neutral gas such as nitrogen or argon.

[0185] In step 2000, the manufactured transmission device 10 can then be inserted into a transceiver system or into an optical signal conversion system, depending on the application of the invention. In particular, step 2000 may include a substep consisting of cutting out at least a portion of the device initial in order to obtain an application device comprising a desired number of optical assemblies 50-n.

[0186] Diagrams 11 [a] and 11 [b] of [Fig. 11] are flowcharts representing examples of substeps of steps 1200 and 1400 of preparation (or manufacture or assembly) of the transmitter component 100 and the receiver component 200 respectively, in the material manufacturing phase of the transmission device 10, according to embodiments of the invention.

[0187] The preparation of the emitting component 100 in the material manufacturing phase may include an initial substep 1202 consisting of preparing, assembling or supplying an emissive substrate equipped with a multitude of light sources (i.e. emission zones), integrated or deferred.

[0188] Similarly, the preparation of a receiving component 200 in the material manufacturing phase may include an initial substep 1402 of preparing, assembling or supplying a receiving substrate equipped with a multitude of light acquisition units (i.e. receiving areas), integrated or deferred.

[0189] For example and without limitation, such initial substeps 1202 and 1402 can be carried out using suitable packaging technologies, such as pick and place, mass transfer, lamination, and / or direct bonding processes, such as chip-on-chip, chip-on-wafer or wafer-on-wafer bonding.

[0190] In some embodiments, the physical manufacturing phase may include a substep 1204 of assembling the emitting component 100 and / or a substep 1404 of assembling the receiving component 200, consisting of depositing connecting elements, respectively 116-n and 216-n. These connecting elements may be deposited on the emitting face 104 of the emitting component 100 in line with each of the emitting zones 102-n, or on the receiving face 204 of the receiving component 200 in line with each of the receiving zones 202-n.

[0191] Advantageously, as shown in the diagrams of Figures 2 and 3, the connecting elements 116-n and 216-n can be circular, donut-shaped metallizations with a configuration analogous to the microtubes 310 of the interconnecting component 300. The size and thickness of the connecting elements, following substeps 1204 and 1404, corresponding to the dimensions h and e, can then range from a few nanometers to several micrometers. For example, the size and thickness can be 2 µm and 0.2 µm, respectively. The connecting elements 116-n and 216-n can serve as mounting pads for the associated microtubes 310. These metallizations can be made of gold, indium, aluminum, and generally any material that is sufficiently electrically conductive and suitable for the deposition and etching techniques used in microelectronics.

[0192] In embodiments, the size h; and the thickness e; of the connecting elements 116-n and 216-n can be defined as a function of the cross-sectional size g3i of an associated micro-tube 310-n and / or the separation distance d(n>n+i) between the different emission zones, between the different reception zones and / or between the different micro-tubes to be manufactured.

[0193] In addition, the size h; and the thickness e; of a connecting element can also be defined as a function of the insertion depth of the associated 310-n microtube to achieve a target safety value to ensure optical sealing and "zone / microtube" electrical contact, i.e., electrical contact between a considered zone, 102-n or 202-n, and an associated 310-n microtube.

[0194] In embodiments using a substep 1204, the associated microtubes 310 can be prepared separately from the assembly of the emitter component 100. Similarly, in embodiments using a substep 1402, the associated microtubes 310 can be prepared separately from the assembly of the receiver component 200.

[0195] The [Fig. 12] is a flowchart representing step 1600 of assembly of the interconnecting component 300, in the material manufacturing phase of the transmission device 10, according to embodiments of the invention.

[0196] The assembly of the interconnecting component 300 in the hardware manufacturing phase may include an initial substep 1602 of providing one or more support substrates.

[0197] In embodiments of the manufacturing process of the transmission device 10, a support substrate can be the transmitter component 100 (as illustrated in [Fig.5]) or the receiver component 200 previously assembled, in steps 1200 and 1400. A support substrate for preparing the interconnection component 300 can also be an integrated photonic interposer for example (as illustrated in [Fig.9]).

[0198] According to certain embodiments, a support substrate may be any semiconductor material such as, for example, all or part of a wafer made of silicon, germanium, gallium arsenide (GaAs), indium phosphide (InP), crystalline silicon, or other materials. A support substrate may also be formed from any non-semiconductor material such as, for example, glass, sapphire, or ceramics. Such a support substrate may have a substantially planar structure and generally extend in the (X,Y) plane. For example, and without limitation, a wafer may typically have a thickness of 525 µm and a diameter of 100 mm. The support substrate may have a thickness of 725 µm and a diameter of 200 mm, or a thickness of 775 µm and a diameter of 300 mm.

[0199] It should be noted that in the initial substep 1602, a support substrate formed by a wafer can be characterized by a first face (also called the 'support face') and a second face (also called the 'back face') opposite the first face. The first and second faces can be substantially parallel to each other, defined in the (X,Y) plane. The support substrate can have varying geometric shapes and dimensions in the (X,Y) plane.

[0200] In substep 1604 of assembling the interconnecting component 300, for each supplied support substrate, microtubes 310 are fabricated on a specific face of the support substrate. For example, and without limitation, the fabrication of the microtubes in a network configuration can be carried out through a succession of photolithography, deposition, and / or etching steps.

[0201] The use of suitable microelectronic technologies, such as VLSI (Very Large Scale Integration) techniques, makes it possible to guarantee the formation of up to several million microtubes in parallel, on a surface area of ​​a few square centimeters. The chosen level of microtube densification is limited a priori only by the minimum separation distance between emission and / or reception zones, and is therefore limited only by the type and miniaturization of the sources and receivers. A high density of microtubes makes it possible to obtain high-density optical signal transmission.

[0202] In embodiments where a support substrate is the emitting component 100, each microtube can be produced on the emitting face 104 with respect to an associated emitting area 102-n. Similarly, in embodiments where a support substrate is the receiving component 200, each microtube can be produced on the receiving face 204 with respect to an associated receiving area 202-n. In these specific cases, as a result of substep 1604, at least a portion of the interconnecting component 300 can be directly connected to the emitting component 100 or to the receiving component 200, respectively.

[0203] In embodiments where a support substrate is a wafer, the microtubes can be produced on the support face of the substrate. Furthermore, the preparation of the interconnect component 300 may further include a substep 1606 consisting of thinning at least one support wafer, in particular by polishing the back face of the substrate, using known processes associated with microelectronic fabrication. In this case, the resulting thickness of a support substrate after the thinning substep 1606 may be less than or equal to 1000 mm, for example.

[0204] Diagrams 13[a] and 13[b] of [Fig. 13] represent, in the (X,Z) plane and the (X,Y) plane respectively, at least a portion of the interconnecting component 300 being manufactured following substep 1604 or substep 1606, according to embodiments of the invention. In particular, diagrams 13[a] and 13[b] represent a support substrate, designated by reference numeral 320-(i), carrying microtubes 310-(i) during fabrication (or intermediate) and distributed according to a matrix configuration. Each microtube 310-(i) can be formed by a wall denoted 314-(il) resulting from substep 1604 of fabrication. A microtube wall 314-(il) can be made of a portion of dielectric material, corresponding in particular to layer 314A of the wall 314 of a microtube 310-p of a fabricated interconnecting component 300.

[0205] According to some embodiments, the assembly of the interconnecting component 300 may include an initial substep 1608 consisting of injecting (or depositing) between the microtubes of the set of microtubes 310 of the interconnecting component 300 an undercoating material (such as epoxy, polyimide, or more generally a polymer resin). This undercoating material may be deposited by capillary action, for example. Its role is to protect and improve the reliability of the assembly.

[0206] According to some embodiments, the preparation of at least a part of the interconnecting component 300 may include a substep 1610 consisting of a localized deposition of metallic layers on all or part of the microtubes manufactured on a support substrate.

[0207] Diagrams 14[a] and 14[b] of [Fig. 14] represent, in the (X,Z) plane and the (X,Y) plane respectively, at least a portion of the interconnecting component 300 being manufactured in substep 1610, according to embodiments of the invention. In particular, diagrams 14[a] and 14[b] represent a support substrate 320-(i) carrying micro-tubes 310-(i) being manufactured, each formed by a wall 314-(i2) from manufacturing substep 1610. A 314-(i2) microtube wall can be made of a dielectric material portion covered with a metallic material portion, corresponding respectively to layer 314A and layers 314b and 314c of the 314 wall of a 310-p microtube of a fabricated 300 interconnecting component.

[0208] Advantageously, in embodiments where a support substrate is a wafer, the preparation of at least a portion of the interconnecting component 300 may include a substep 1612 of making perpendicular etches (or perforations) in the support substrate, from the back face of the substrate to the support face, forming a plurality of micro-vias. Each etch may be made so as to open onto the inside of the micro-tubes.

[0209] Substep 1612 may consist of a substep for preparing the intermediate substrate 320, optionally included in a portion of the interconnecting component 300. Substep 1612 may be implemented by a process microelectronics, such as the deep Silicon etching process known as the BOSCH process, by a deep reactive ion etching process (“Deep RIE”), or by a wet chemical etching process in the case of isotropic (i.e. non-crystalline) materials.

[0210] Diagram 15[a] of [Fig. 15] represents, in the (X,Z) plane, at least a portion of the interconnecting component 300 being manufactured following substep 1612, according to embodiments of the invention. In particular, diagram 15[a] represents a support substrate 320-(i) comprising a plurality of micro-vias 330-(i) and carrying a plurality of micro-tubes 310-(i) being manufactured, each formed by a wall 314-(il) resulting from manufacturing substep 1604.

[0211] Advantageously, in embodiments where the support substrate is a wafer, the preparation of at least a portion of the interconnecting component 300 may include a substep 1614 consisting of depositing a thin metallic layer (or coating, or liner) onto the inner wall (or edge, or flank) of the micro-vias 330-(i). Such localized metallization may be carried out, for example, by electrochemical deposition. In these variants of the invention, at least a portion of the micro-tubes 310-(i) formed on the support substrate 320-(i) may originate from the localized metallization step 1610 of the micro-tubes.

[0212] Diagram 15[b] of [Fig. 15] schematically represents, in a (X,Z) plane, at least a portion of the interconnecting component 300 being manufactured following substep 1614, according to embodiments of the invention. In particular, diagram 15[b] represents a support substrate 320-(i) comprising a plurality of micro-vias 330-(i) with a wall 334-(i2), and carrying a plurality of micro-tubes 310-(i) being manufactured, each formed by a wall 314-(i2) resulting from manufacturing substep 1610.

[0213] Advantageously, the preparation of at least a portion of the interconnecting component 300 may include a substep 1616 of filling (injecting) at least a portion of the microtubes 310-(i) and / or microvias 330-(i) with a propagation material. For example, and without limitation, the filling may be injected (or inserted) from the rear face of the support substrate 320-(i) forming at least a portion of the intermediate substrate 320. Such an injection material may be made from a polysilicon, an oxide, or a nitride, among other things.

[0214] Advantageously, a substep 1616 of filling at least a portion of the microtubes and / or microvias with a material can be carried out following a substep 1610 and / or a substep 1614 of metal deposition on the inner wall of the microtubes and microvias. Such a filling substep 1616 can be implemented, for example, using vacuum deposition equipment. In some embodiments, the filling substep 1616 may involve filling with a liquid medium such as distilled and / or deionized water, by depositing a microdroplet of water to form a microlens. In this case, to maintain the water in the microtube during assembly, a step involving lowering the component's temperature to freeze the water within the microtube for the duration of the assembly may be implemented.

[0215] Diagrams 16[a] and 16[b] of [Fig. 16] schematically represent, in the (X,Z) plane, at least a portion of the interconnecting component 300 being manufactured in substep 1616, according to embodiments of the invention. In particular, diagrams 16[a] and 16[b] represent a support substrate 320-(i) comprising a plurality of micro-vias 330-(i) with or without a wall 334-(i2), and carrying a plurality of micro-tubes 310-(i) being manufactured, each by means of a wall 314-(i1) or 314-(i2) resulting respectively from manufacturing substep 1604 or 1608. In diagrams 16[a] and 16[b], the plurality of micro-vias 330-(i) and the plurality of micro-tubes 310-(i) are filled with an injection material 332-(i) resulting from manufacturing substep 1616.

[0216] Advantageously, in embodiments where the process includes the use of two wafers as support substrates 320-(i) carrying microtubes 310-(i), the preparation of at least a portion of the interconnecting component 300 may include a substep 1618 consisting of bonding the two rear faces of the wafers used together to form the intermediate substrate 320 comprising an interface 328. Such a bonding operation may be carried out by brazing, or with or without a filler element. In particular, such a bonding operation may be carried out by direct oxide bonding, or by direct metal bonding, or by hybrid (i.e., oxide-metal) direct bonding.For example, the bonding operation can be implemented via a direct bonding technique after a chemical and mechanical polishing operation (or CMP, acronym for the Anglo-Saxon expression Chemical and Mechanical Polishing) or after a treatment by "surface activated bonding" (or SAB, acronym for the Anglo-Saxon expression Surface Activated Bonding).

[0217] Steps 1200, 1400, and / or 1600, relating to the various manufactured components of the device, may further include a substep consisting of cutting at least a portion of the component in question to obtain subsets of emission areas, microtubes, and / or reception areas. In particular, such microtube cutting may be carried out to form vignettes of at least one microtube, in fields of different sizes to accommodate the number of waveguides required.

[0218] According to certain embodiments, step 1800 of assembling the various components in the manufacturing phase of the transmission device 10 may consist of cold-inserting the microtubes 310-(i) (manufactured during the fabrication of the interconnecting component 300) into the assembly elements 116-n and / or 216-n (formed during the preparation of the photonic components). This insertion step may be carried out using pick-and-place equipment comprising a controlled press system and a precise alignment and placement system (on the order of a micron or even lower).

[0219] During this cold insertion step, the microtubes penetrate the malleable material to ensure optical sealing and electrical contact. It should be noted that the injection of the filler material in substep 1616 of the assembly of the interconnecting component 300 can be applied in such a way as to induce partial filling of the microtubes 310-(i) defined according to a maximum filling height hr strictly less than the height ht of the microtubes in question. Such partial filling can, in particular, allow sufficient 'free' height (ht - hr) of a microtube to penetrate the assembly elements of size h.Thus, in embodiments, such a filling substep 1616 may include the implementation of a chemical mechanical polishing (CMP) or planarization step (also called CMP, an acronym for the Anglo-Saxon expression "Chemical Mechanical Polishing / Planarization") or the implementation of a selective etching step based on reactive gases.

[0220] The combined use of microtubes and connecting elements, as well as the cold insertion step, allows for optimization of the optical and possibly electrical connection between the emitting component and the receiving component.

[0221] Furthermore, the cold insertion implemented in step 1800 of component assembly can take into account a compression force value on the order of a few hundredths of a gram to a few grams per microtube considered in the compression operation. For example, a typical compression force value to guarantee the quality of the contacts formed by the device 10 can be about 1 gram per microtube if the insertion is carried out in aluminum assembly elements, and about 0.1 gram per microtube if the insertion is carried out in assembly elements made of a ductile material such as indium.

[0222] The total compression force available or to be applied to the components to connect (or join) all the objects of the optical assemblies of the device 10 can be determined based on the number of microtubes to be inserted into the receiving pads. For a compression device comprising a vertical force arm capable of applying 400 kg of pressure, the cold insertion of assembly step 1800 can by For example, and without limitation, this allows for the insertion of 400,000 to 4,000,000 microtubes into assembly elements. Such assembly capacity makes it possible to obtain an improved, and in particular dense, device in terms of the number of optical and / or electro-optical transmission channels between a transmitting matrix and a receiving matrix.

[0223] A person skilled in the art will readily understand that certain steps or substeps of the process, in particular illustrated in Figures 10 and 12, can be carried out simultaneously, sequentially, successively, independently or not, and / or in a different order, for example in an order defined during the design phase of the transmission device 10.

[0224] It should be noted that certain features of the invention may have advantages when considered separately.

[0225] The process described above according to embodiments of the invention can be implemented using various elements. In particular, the design phase and / or the physical manufacturing phase can use hardware, software, or a combination of hardware and software, including in the form of program code that can be distributed as a program product in various forms.

[0226] The invention is not limited to the embodiments described above by way of non-limiting example. It encompasses all possible embodiments that could be considered by a person skilled in the art. A person skilled in the art will understand that the invention is not limited to the various components, configurations, or manufacturing steps of the transmission device described by way of non-limiting example. In particular, certain embodiments of the invention can be combined.

Claims

Demands

1. Photonic device (10) comprising an emitting component (100), configured to emit at least one emission signal (Si) comprising an optical signal component, a receiving component (200), and an interconnecting component (300) between the emitting component (100) and the receiving component (200), said interconnecting component (300) comprising at least one microtube (310) adapted to transmit said optical signal component from said emitting component (100) to said receiving component (200), said at least one microtube (310) comprising a wall (314) and an internal medium (312) adapted to propagate said optical signal component, surrounded by the wall of the microtube, said wall (314) being adapted to separate the internal medium (312) and an ambient medium (40) in which said photonic device (10) is immersed.

2. Photonic device (10) according to claim 1, wherein said photonic device (10) comprises at least one emitting connection element (116-n) configured to connect the emitting component (100) and one end of a microtube (310).

3. Photonic device (10) according to any one of the preceding claims, wherein said photonic device (10) comprises at least one receiving connection element (216-n) configured to connect the receiving component (200) and one end of a microtube (310).

4. Photonic device (10) according to any one of the preceding claims, wherein said at least one emission signal (Si) further comprises an electrical signal component, the wall (314) of a microtube (310) comprising at least one metallic part configured to propagate said electrical signal component from said emitting component (100) to said receiving component (200).

5. A photonic device (10) according to any one of the preceding claims, wherein said interconnecting component (300) further comprises an intermediate substrate (320) comprising at least one micro-via (330) in association with each microtube (310), said at least one micro-via (330) being arranged to transmit the optical signal component from the transmitter component (100) to said receiver component (200).

6. Photonic device (10) according to claim 5, wherein said at least one emitting signal (Si) further comprises an electrical signal component, and wherein said at least one micro-via (330) comprises a metallic wall (334) configured to propagate said electrical signal component from said emitting component (100) to said receiving component (200).

7. Photonic device (10) according to any one of the preceding claims, wherein said at least one microtube (310) comprises a filling material chosen to optimize the propagation of the optical component of the signal to be transmitted.

8. Photonic device (10) according to any one of claims 5 to 7, wherein said at least one micro-via (330) comprises a filling material chosen to optimize the propagation of the optical component of the signal to be transmitted.

9. Photonic device (10) according to any one of the preceding claims, wherein the dimensions of said interconnecting component (300) are on the order of a few micrometers to a few tens of micrometers.

10. Photonic device (10) according to any one of the preceding claims, wherein said interconnecting component (300) further comprises a photonic interposer (340), said at least one microtube (310) extending longitudinally between said emitting component (100) and said photonic interposer (340), and / or between said photonic interposer (340) and said receiving component (200).

11. A method for manufacturing the photonic device (10) according to any one of claims 1 to 10, characterized in that the method comprises the steps of: - preparing (1200) an emitting component (100) capable of emitting at least one emission signal (Si) comprising an optical signal component, and preparing (1400) a receiving component (200), - manufacturing (1600) an interconnecting component (300) comprising at least one microtube (310), and - assembling (1800) said interconnecting component (300) between the emitting component (100) and the receiving component (200); said process comprising the manufacture of said at least one microtube, a microtube (310) being capable of transmitting said optical signal component from said transmitter component (100) to said receiver component (200), said at least one microtube (310) comprising a wall (314) and an internal medium (312) capable of propagating said optical signal component, surrounded by the wall of the microtube, said wall (314) separating the internal medium (312) and an ambient medium (40) in which said photonic device (10) is immersed.

12. A method according to claim 11, wherein said assembly step comprises connecting the emitting component (100) and / or the receiving component (200), with one end of a microtube (310), by means of at least one transmitting connection element (116-n) and / or at least one receiving connection element (216-n), said connection comprising a cold insertion of said at least one microtube (310) of the interconnecting component (300) into said at least one transmitting connection element (116-n) and / or receiving connection element (216-n).

13. A method according to any one of claims 11 to 12, wherein said manufacturing step (1600) of the interconnecting component (300) comprises: - the provision (1602) of at least one support substrate, - the fabrication (1604) of said at least one micro-tube (310), on a support face of said support substrate, - the implementation (1612) of at least one engraving of said support substrate perpendicularly to form at least one micro-via (330), from a rear face of said support substrate to the support face, said at least one engraving being made so as to open onto the interior of said at least one micro-tube (310).

14. A method according to any one of claims 11 to 13, wherein said at least one emitting signal (Si) further comprises an electrical signal component, and wherein said manufacturing step (1600) of the interconnecting component (300) comprises (1610) a deposition of a metallic layer on the wall (314) of a microtube (310) such that said wall (314) comprises at least one metallic part capable of propagating said electrical signal component from said emitting component (100) to said receiving component (200).

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