Variable gauge analog filter

The variable-gauge analog filter addresses the trade-off between power handling and energy consumption by employing a main transistor in a blocked state, achieving efficient filtering with low energy use in the 30-300 MHz range.

FR3170153A1Pending Publication Date: 2026-06-19THALES SA

Patent Information

Authority / Receiving Office
FR · FR
Patent Type
Applications
Current Assignee / Owner
THALES SA
Filing Date
2024-12-18
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing filters face a trade-off between high power handling and low energy consumption, with variable capacitance diodes being energy-efficient but having low power handling, and switched capacitance diodes consuming high energy despite high power handling.

Method used

A variable-gauge analog filter using a main transistor with a variable-capacitance capacitor, where the source and drain form the high and low points, and the control input is connected to the drain, allowing the transistor to operate in a blocked state to reduce energy consumption while maintaining good power handling.

Benefits of technology

The filter achieves low energy consumption and high power handling by utilizing transistors in a cutoff state, providing a robust and efficient filtering solution in the very high frequency range of 30-300 MHz.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

Variable Gauge Analog Filter The present invention relates to a variable gauge analog filter (10) comprising, between an input (18) for a frequency signal (22) to be filtered and an output (20) for a filtered signal (24). The filter comprises a set of filtering impedances (26) with at least one variable capacitor (28, 32) disposed between a high point and a low point, and comprising a control input (21) for a control voltage (of the capacitor's capacitance). The variable capacitor (28) is a main transistor (28) whose source and drain form the high and low points respectively, the control input (21) being connected to the drain, the source and gate being connected to electrical potentials for operation of the main transistor (28) in a cutoff state. Figure for the abstract: Figure 1
Need to check novelty before this filing date? Find Prior Art

Description

Title of the invention: Variable gauge analog filter

[0001] The present invention relates to a variable-gauge analog filter.

[0002] Given the technologies available today, a person skilled in the art is able to manufacture very selective filters in the field of very high frequencies.

[0003] Depending on the permissible input power, it is known to use filters of the type: variable capacitance diodes or filters of the type: switched capacitance diodes. The principle of the first type of filter is that variable capacitance diodes have the characteristic of behaving like a capacitor whose electrical capacitance varies with the voltage applied across its terminals. Thus, depending on the value of the applied control voltage, the electrical capacitance and the Bode plot of the filter incorporating the diode are modified. The shape of the selective filter can therefore be continuously modified. This type of filter is energy-efficient, but its power handling is low, i.e., approximately ImW.

[0004] For the second type of filter, the principle is that the capacitances are switched via PIN diodes (from the English Positive Intrinsic Negative), in the blocked state or in the conducting state depending on the desired tuning frequency.

[0005] However, the use of such a filter considerably increases energy consumption although its power handling is high, i.e. approximately 1W.

[0006] The aim of the invention is therefore to propose a selective filter combining the two characteristics of input power handling up to 0.5W and low or almost zero energy consumption.

[0007] To this end, the invention relates to a variable-gauge analog filter comprising, between an input for a frequency signal to be filtered and an output for a filtered signal, a set of filtering impedances with at least one variable-capacitance capacitor arranged between a high point and a low point, and comprising a control input for a control voltage of the capacitor's capacitance,

[0008] characterized in that the variable capacitance capacitor is a main transistor whose source and drain form the high and low points respectively, the control input being connected to the drain, the source and gate being connected to electrical potentials for operation of the main transistor in a blocked state.

[0009] The use of transistors in the blocked state allows for a less energy-intensive filter and good power handling.

[0010] According to other advantageous aspects of the invention, the variable gauge filter comprises one or more of the following features, taken individually or in all technically possible combinations:

[0011] - the source and gate of the main transistor are connected to ground;

[0012] - the frequency signal to be filtered is between 30 MHz and 300 MHz;

[0013] - the main transistor is of the metal-oxide gate field-effect type;

[0014] - the filtering impedance assembly includes an optional transistor whose drain is connected to the control input and whose source and gate are connected to electrical potentials for operation of the optional transistor in a blocked state;

[0015] - the filter includes an impedance matching circuit, the matching circuit impedance comprising an input capacitor and an input coil, the input coil being connected between the input and ground, the input capacitor being connected between the input and the filtering impedance set;

[0016] - the filter comprises a filtering unit disposed between the drain of the main transistor and the control input, the filtering unit comprising a filtering capacitor and a filtering coil, the filtering capacitor being connected between the control input and ground, the filtering coil being connected between the control input and the drain of the main transistor;

[0017] - the filtering impedance set has a symmetrical structure with two main transistors, each connected to the control input; and

[0018] - the control voltage applied to each main transistor is identical.

[0019] The invention will become clearer upon reading the following description, given solely by way of non-limiting example, and made with reference to the drawings in which:

[0020] [Fig-1] [Fig.1] is a diagram of a very high frequency bandpass filter according to the invention.

[0021] A variable-gauge analog filter 10 is illustrated in Figure 1. The filter 10 is symmetrical about an axis 12 and comprises two filter modules 14A, 14B connected together by a connecting branch 16. The filter 10 also includes an input 18 for the signal to be filtered, an output 20 for the filtered signal and a control input 21 for a control voltage Vjs of the electrical capacitance of an internal capacitor.

[0022] One of the two filtering modules 14A, 14B is connected to the input 16 for a frequency signal 22 to be filtered. The frequency signal 22 to be filtered is advantageously between 30 MHz and 300 MHz, more advantageously the frequency signal to be filtered is between 30 MHz and 50 MHz.

[0023] The other filtering module 14B is connected to output 20 for a filtered signal 24.

[0024] The two filtering modules 14A, 14B each comprise a set filtering impedances 26, also called filtering resonator 26. The frequencies of resonance of the filtering impedance set 26 of each filtering module 14A, 14B are preferably the same in order to ensure a good quality filter 10.

[0025] The filtering resonator 26 preferably has a symmetrical structure. Alternatively, the symmetrical structure includes two main transistors 28, each connected to the control input 21 on its respective drain.

[0026] The control voltage Vds applied to each filter resonator 26 is preferably identical. The control voltage Vjs reaches, for example, up to 130V depending on the transistor model 28.

[0027] The filtering resonator 26 includes a main transistor 28. The main transistor 28 includes by construction an internal capacitor (not shown) disposed between a high point and a low point corresponding to the drain and the source respectively of the main transistor 28.

[0028] Advantageously, the main transistor 28 is of the metal-oxide gate field-effect type.

[0029] The source and gate of the main transistor 28 are connected to main electrical potentials for operation of the main transistor 28 in a cut-off state. More specifically, the source and gate of the main transistor 28 are connected to ground 29.

[0030] This means that the voltage between the source and the grid, denoted VgS, is zero.

[0031] Thus, when the main transistor 28 is in a blocked state, the main transistor 28 behaves like a current switch. Thus, the drain and source of the main transistor 28 are connected only through the internal capacitor.

[0032] When the electric charge Q of the internal capacitor is fixed, a change in the voltage AV across the internal capacitor causes an inversely proportional change in the electric capacitance C of the internal capacitor. This is shown by the following equation:

[0033] Q= C.AV [Eq. 1]

[0034] The filter impedance assembly 26 further includes the control input 21 for the control voltage V^g of the capacitance of the main transistor 28. In other words, in Figure 1, the change in the voltage AV across the internal capacitor in equation 1 corresponds to the control voltage Vds applied to the main transistor 28. This corresponds to the voltage between the control input 21 and the source of the main transistor.

[0035] Equation 1 remains true as long as the transistor remains within a range of values ​​where the main transistor 28 is blocked, according to the following equation:

[0036] Where Vy corresponds to the threshold voltage.

[0037] Thus, the range of values ​​where the main transistor 28 is cut off depends on the threshold voltage Vp. Preferably, Vds is between 20 V and 120 V. More preferably, Vds is between 30 V and 120 V.

[0038] Preferably, the filtering resonator 26 includes an optional transistor 32. In the case of [Fig. 1], the optional transistor 32 is a transistor of the same type as the main transistor 28. The drain of the optional transistor 32 is connected to the control input 21. The source of the optional transistor 32 is, for its part, connected to an electrical potential 34, and the gate is connected to ground 29 for operation of the optional transistor in a blocked state.

[0039] Alternatively, the optional transistor 32 is another type of transistor such as a JFET (Junction Field Effect Transistor) or MESFET (Metal Semiconductor Field Effect Transistor).

[0040] The source of the optional transistor 32 is connected to a coupling coil 38 and a resonant coil 39.

[0041] Alternatively, the filtering resonator 26 comprises several optional transistors 32 aligned in series between the drain of the main transistor 28 and the switching coils 38 and resonant coil 39.

[0042] Alternatively, the secondary transistor(s) 32 are replaced by one or more fixed capacitors.

[0043] The resonant coil 39 is for example connected in parallel between one of the electrical potentials 34 and ground 29.

[0044] The coupling coil 38 is connected between one of the electrical potentials 34 and the connecting branch 16.

[0045] The coupling coil 38 allows the two filter modules 14a, 14b which oscillate at the same frequency to be coupled.

[0046] The resonant coil 39 forms with the internal capacitor of the main transistor 28, and optionally that of the optional transistor 32, the resonant frequency of the filter 10.

[0047] The [Fig.1] uses a resonant coil 39 and a coupling coil 38 but their number varies according to the required performance of the filter 10.

[0048] The two filtering modules 14A, 14B optionally include an impedance matching circuit 40. The impedance matching circuit 40 includes an input capacitor 42 and an input coil 44.

[0049] The input capacitor 42 is connected between the input 18 or the output 20 and the filter impedance set 26.

[0050] The input coil 44 is advantageously connected between the input 18 and ground 29.

[0051] The two filter modules 14A, 14B preferably include a filter unit 46 for the control input 21. The filter unit 46 includes a filter capacitor 48 and a filter coil 50. The filter unit 46 is disposed between the drain of the main transistor 28 and the control input 21.

[0052] Preferably, the filtering unit 46 is arranged between the drains of transistors 28 and 32 and the control input 21.

[0053] The filter capacitor 48 is connected between the control input 21 and ground 29.

[0054] The filter coil 50 is connected between the control input 21 and the drain of the main transistor 28.

[0055] Preferably, the filter coil 50 is connected between the control input 21 and the drains of transistors 28 and 32.

[0056] The variable-gauge analog filter 10 according to the invention allows the signal between the input 18 and the output 20 to be filtered while consuming less energy. This is possible thanks to the use of transistors in a cutoff state instead of switched-capacitor diodes. Indeed, the cutoff state of the transistors is relatively advantageous since it consumes no energy, neglecting leakage current.

[0057] The filtering unit 46, for its part, makes it possible to improve the template of the filter 10 by filtering over a wider band and with a steeper slope of the transfer function of the filter 10 (and no return of the current in the control).

[0058] Thus, the invention makes it possible to have a very robust and low energy consumption filter in the very high frequency range, that is to say between 30MHz and 300 MHz, and more preferably between 30MHz and 50MHz.

Claims

Demands

1. A variable-gauge analog filter (10) comprising, between an input (18) for a frequency signal (22) to be filtered and an output (20) for a filtered signal (24), a set of filtering impedances (26) with at least one variable-capacitance capacitor (28, 32) arranged between a high point and a low point, and comprising a control input (21) for a control voltage ( ) of the capacitor's capacitance, characterized in that the variable-capacitance capacitor (28) is a main transistor (28) whose source and drain form the high and low points respectively, the control input (21) being connected to the drain, the source and gate being connected to electrical potentials for operation of the main transistor (28) in a blocked state.

2. Filter according to claim 1, wherein the source and gate of the main transistor (28) are connected to ground (29).

3. Filter according to claim 1 or 2, wherein the frequency signal to be filtered (22) is between 30 MHz and 300 MHz.

4. Filter according to any one of the preceding claims, wherein the main transistor (28) is of the metal-oxide gate field-effect type.

5. Filter according to any one of the preceding claims, wherein the filtering impedance set (26) comprises an optional transistor (32) whose drain is connected to the control input (21) and whose source and gate are connected to electrical potentials (34, 36) for operation of the optional transistor (32) in a blocked state.

6. Filter according to any one of the preceding claims, comprising an impedance matching circuit (40), the impedance matching circuit (40) comprising an input capacitor (42) and an input coil (44), the input coil (44) being connected between the input (18) and ground (29), the input capacitor (42) being connected between the input (18) and the filtering impedance assembly (26).

7. A filter according to any one of the preceding claims, comprising a filtering unit (46) disposed between the drain of the main transistor (28) and the control input (21), the unit filtering (46) comprising a filtering capacitor (48) and a filtering coil (50), the filtering capacitor (48) being connected between the control input (21) and ground (29), the filtering coil (50) being connected between the control input (21) and the drain of the main transistor (28).

8. Filter according to any one of the preceding claims, wherein the filtering impedance set (26) comprises a symmetrical structure with two main transistors (28), each connected to the control input (21).

9. Filter according to claim 8, wherein the control voltage applied to each main transistor (28) is identical.