Display device

Abstract

A display device (Fig. 3; 110), comprising: a display panel including a plurality of subpixels (Fig. 1; SPr, SPg, SPb); a data driving unit (Fig. 1; 125) configured to supply a data signal to the plur

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] The present application claims the priority benefit of Korean Patent Application No. 10-2022-0189905, filed in Republic of Korea on December 29, 2022, which is hereby incorporated by reference herein in its entirety into the present application. BACKGROUND Technical Field

[0002] The present disclosure relates to a display device, and more particularly, to a display device where crosstalk is improved by adjusting a timing of a gate signal. Discussion of the Related Art

[0003] Recently, with the advent of an information-oriented society, interest in information displays for processing and displaying a massive amount of information and the demand for portable information media have increased. As such, the display field has rapidly advanced. Thus, various light and thin flat panel display devices have been developed and highlighted.

[0004] Among the various flat panel display devices, the organic light emitting diode (OLED) display device is an emissive type device that does not include a backlight unit as used in a non-emissive type device such as a liquid crystal display (LCD) device. As a result, the OLED display device has advantages in a viewing angle, a contrast ratio and power consumption to be applied to various fields.

[0005] OLED display devices use a plurality of gate signals, and some of the plurality of gate signals distorts a data signal due to a coupling. As a result, slanted line crosstalk along a diagonal direction may be caused and the display quality of an image may be deteriorated. SUMMARY OF THE DISCLOSURE

[0006] Accordingly, the present disclosure is directed to a display device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.

[0007] An object of the present disclosure is to provide an organic light emitting diode display device where slanted line crosstalk along a diagonal direction is reduced or minimized by adjusting a timing of a gate signal.

[0008] Another object of the present disclosure is to provide an organic light emitting diode display device where a distortion of a data signal and slanted line crosstalk along a diagonal direction are reduced or minimized and a display quality of an image is improved by performing a sampling after a data signal is saturated.

[0009] Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be apparent from the description, or can be learned by practice of the disclosure. These and other advantages of the disclosure will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

[0010] To achieve these and other advantages and in accordance with the purpose of the present disclosure, as embodied and broadly described herein, a display device includes: a timing controlling unit arranged to generate image data, a data control signal and a gate control signal; a data driving unit arranged to generate a data signal using the image data and the data control signal; a gate driving unit arranged to generate a gatel signal, an odd gate2 signal, an even gate2 signal and an emission signal using the gate control signal; and a display panel arranged to display an image using the gatel signal, the odd gate2 signal, the even gate2 signal and the emission signal, wherein a rising timing of the gatel signal is simultaneous with or next to (after) a rising timing of the odd gate2 signal.

[0011] It is to be understood that both the foregoing general description and the following detailed description are explanatory and are intended to provide further explanation of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the principles of the disclosure. In the drawings:

[0013] FIG. 1 is a view showing a display device according to an embodiment of the present disclosure.;

[0014] FIG. 2 is a plan view showing a display panel of a display device according to an embodiment of the present disclosure;

[0015] FIG. 3 is a cross-sectional view showing a display panel of a display device according to an embodiment of the present disclosure;

[0016] FIG. 4 is a circuit diagram showing a subpixel of a display device according to an embodiment of the present disclosure;

[0017] FIG. 5 is a block diagram showing first and second gate driving units and a display panel of a display device according to an embodiment of the present disclosure;

[0018] FIG. 6 is a view showing a plurality of signals of a display device according to an embodiment of the present disclosure;

[0019] FIG. 7 is a view showing a view showing a data signal and a gate2 signal of a display device according to an embodiment of the present disclosure; and

[0020] FIG. 8 is a view showing a crosstalk cognition degree with respect to a first time gap of a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0021] Advantages and features of the present disclosure, and implementation methods thereof will be clarified through following example embodiments described with reference to the accompanying drawings. The present disclosure may, however, be embodied in different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these example embodiments are provided so that this disclosure can be sufficiently thorough and complete to assist those skilled in the art to fully understand the scope of the present disclosure. Further, the present disclosure is only defined by scopes of claims.

[0022] The shapes, sizes, ratios, angles, numbers, and the like, which are illustrated m the drawings to describe various example embodiments of the present disclosure, are merely given by way of example. Therefore, the present disclosure is not limited to the illustrations in the drawings. Like reference numerals refer to like elements throughout the specification, unless otherwise specified.

[0023] In the following description, where the detailed description of the relevant known function or configuration may unnecessarily obscure a feature or aspect of the present disclosure, a detailed description of such known function or configuration may be omitted or a brief description may be provided.

[0024] Where the terms "comprise," "have," "include," and the like are used, one or more other elements may be added unless the term, such as "only," is used. An element described in the singular form is intended to include a plurality of elements, and vice versa, unless the context clearly indicates otherwise.

[0025] In construing an element, the element is to be construed as including an error or a tolerance range even where no explicit description of such an error or tolerance range is provided.

[0026] Where positional relationships are described, for example, where the positional relationship between two parts is described using "on," "over," "under," "above," "below," "beside," "next," or the like, one or more other parts may be located between the two parts unless a more limiting term, such as "immediate(ly)," "direct(ly)," or "close(ly)" is used. For example, where an element or layer is disposed "on" another element or layer, a third layer or element may be interposed therebetween.

[0027] Although the terms "first," "second," A, B, (a), (b), and the like may be used herein to refer to various elements, these elements should not be interpreted to be limited by these terms as they are not used to define a particular order or precedence. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.

[0028] The term "at least one" should be understood to include all combinations of one or more of related elements. For example, the term of "at least one of first, second and third elements" may include all combinations of one or more of each of the first, second and third elements as well as one or more of the first, second or third element.

[0029] The term "display device" may include a display device in a narrow sense such as liquid crystal module (LCM), an organic light emitting diode (OLED) module and a quantum dot (QD) module including a display panel and a driving unit for driving the display panel. In addition, the term "display device" may include a complete product (or a final product) including the LCM, the OLED module and the QD module such as a notebook computer, a television, a computer monitor, an equipment display device including an automotive display apparatus or a shape other than a vehicle, and a set electronic apparatus or a set device (or a set apparatus) such as a mobile electronic apparatus of a smart phone or an electronic pad. The terms ‘rising timing’ and ‘falling timing’ can be considered to be ‘rising edge’ and ‘falling edge' respectively. The terms ‘rising start timing’ and ‘rising end timing’ can be considered to be ‘rising edge start’ and ‘rising edge end’ respectively.

[0030] Accordingly, a display device of the present disclosure may include an applied product or a set device of a final user's device including the LCM, the OLED module and the QD module as well as a display device in a narrow sense such as the LCM, the OLED module and the QD module.

[0031] According to circumstances, the LCM, the OLED module and the QD module having a display panel and a driving unit may be expressed as "a display device", and an electronic apparatus of a complete product including the LCM, the OLED module and the QD module may be expressed as "a set device." For example, a display device in a narrow sense may include a display panel of a liquid crystal, an organic light emitting diode and a quantum dot and a source printed circuit board (PCB) of a control unit for driving the display panel, and a set device may further include a set PCB of a set control unit electrically connected to the source PCB for controlling the entire set device.

[0032] The display panel of the present disclosure may include all kinds of display panels such as a liquid crystal display panel, an organic light emitting diode display panel, a quantum dot display panel and an electroluminescent display panel. The display panel of the present disclosure is not limited to a specific display panel of a bezel bending having a flexible substrate for an organic light emitting diode display panel and a lower back plate supporter. A shape or a size of the display panel for the display device of the present disclosure is not limited thereto.

[0033] For example, when the display panel is an organic light emitting diode display panel, the display panel may include a plurality of gate lines, a plurality of data lines and a subpixel in a crossing region of the plurality of gate lines and the plurality of data lines. The display panel may include an array having a thin film transistor of an element for selectively applying a voltage to each subpixel, an emitting element layer on the array and an encapsulating substrate or an encapsulation part covering the emitting element layer. The encapsulation part may protect the thin film transistor and the emitting element layer from an external impact and may prevent or at least reduce penetration of a moisture or an oxygen into the emitting element layer. In addition, a layer on the array may include an inorganic light emitting layer, for example, a nano-sized material layer or a quantum dot.

[0034] The thin film transistor of the present disclosure may include one of an oxide thin film transistor, an amorphous silicon thin film transistor, a low temperature polycrystalline silicon thin film transistor.

[0035] Features of various embodiments of the present disclosure may be partially or entirely coupled to or combined with each other. They may be linked and operated technically in various ways as those skilled m the art can sufficiently understand. The embodiments may be carried out independently of or in association with each other in various combinations.

[0036] Hereinafter, a display device according to various example embodiments of the present disclosure where an influence on an oxide semiconductor layer of a thin film transistor of a driving element part is reduced by shielding a light emitted and transmitted from a subpixel and / or a light inputted from an exterior will be described in detail with reference to the accompanying drawings.

[0037] FIG. 1 is a view showing a display device according to an embodiment of the present disclosure. The display device may be an organic light emitting diode (OLED) display device.

[0038] In FIG. 1, a display device 110 according to an embodiment of the present disclosure includes a timing controlling unit 120, a data driving unit 125, first and second gate driving units 130 and 135 and a display panel 140.

[0039] The timing controlling unit 120 generates image data, a data control signal and a gate control signal using an image signal and a plurality of timing signals including a data enable signal, a horizontal synchronization signal, a vertical synchronization signal and a clock signal transmitted from an external system such as a graphic card or a television system. The image data and the data control signal are transmitted to the data driving unit 125, and the gate control signal is transmitted to the first and second gate driving units 130 and 135.

[0040] The data driving unit 125 generates a data signal (a data voltage) Vdata (of FIG. 4) using the data control signal and the image data transmitted from the timing controlling unit 120 and transmits the data signal to a data line DL of the display panel 140.

[0041] The first and second gate driving units 130 and 135 generate a gate signal (a gate voltage) Scl and Sc2 (of FIG. 4) and an emission signal (an emission voltage) Em (of FIG. 4) using the gate control signal transmitted from the timing controlling unit 120 and apply the gate signal Scl and Sc2 and the emission signal Em to a gate line GL of the display panel 140.

[0042] The first and second gate driving units 130 and 135 may be of a gate in panel (GIP) type to be formed in a non-display area NDA of a substrate of the display panel 140 having the gate line GL, the data line DL and a pixel P.

[0043] Although the first and second gate driving units 130 and 135 are disposed in both side portions of the display panel 140 in the embodiment of FIG. 1, just one gate driving unit may be disposed in one side portion of the display panel 140 in another embodiment.

[0044] The display panel 140 includes a display area DA at a central portion thereof and a nondisplay area NDA surrounding the display area DA. The display panel 140 displays an image using the gate signal Scl and Sc2, the emission signal Em and the data signal Vdata. For displaying an image, the display panel 140 includes a plurality of pixels P, a plurality of gate lines GL and a plurality of data lines DL in the display area DA.

[0045] Each of the plurality of pixels P includes red, green and blue subpixels SPr, SPg and SPb, and the gate line GL and the data line DL cross each other to define the red, green and blue subpixels SPr, SPg and SPb. Each of the red, green and blue subpixels SPr, SPg and SPb is connected to the gate line GL and the data line DL.

[0046] When the display device 110 is an OLED display device, each of the red, green and blue subpixels SPr, SPg and SPb may include a plurality of transistors such as a switching transistor, a driving transistor and a sensing transistor, a storage capacitor and a light emitting diode.

[0047] The display device 110 where a link line may be disposed in the display area for reducing a bezel will be illustrated with reference to the following.

[0048] FIG. 2 is a plan view showing a display panel of a display device according to an embodiment of the present disclosure.

[0049] In FIG. 2, the display panel 140 of the display device 110 includes a plurality of vertical link lines VL (dashed vertical lines in Fig. 2) and a plurality of horizontal link lines HL disposed in the display area DA adjacent to the data driving unit 125.

[0050] The plurality of vertical link lines VL are disposed to be parallel to the plurality of data lines DL (solid vertical lines in Fig. 2) and to be spaced apart from each other. The plurality of horizontal link lines HL are disposed to cross the plurality of data lines DL and to be spaced apart from each other.

[0051] Some of the plurality of data lines DL and some of the plurality of vertical link lines VL are connected to the data driving unit 125 to receive the data signal Vdata. The plurality of horizontal link lines HL connect the vertical link lines VL connected to the data driving unit 125 and the data lines DL not connected to the data driving unit 125 to supply the data signal to all of the data lines.

[0052] A structure and an operation of the subpixel SP and the gate driving units 130 and 135 of the display device 110 will be illustrated with reference to a drawing.

[0053] FIG. 3 is a cross-sectional view showing a display panel of a display device according to an embodiment of the present disclosure, FIG. 4 is a circuit diagram showing a subpixel of a display device according to an embodiment of the present disclosure, and FIG. 5 is a block diagram showing first and second gate driving units and a display panel of a display device according to an embodiment of the present disclosure.

[0054] In FIG. 3, the display panel 140 of the display device 110 according to an embodiment of the present disclosure includes one driving transistor 260, two switching transistors 230 and 240 and one storage capacitor 250.

[0055] A driving element 270 and an emitting element 280 electrically connected to the driving element 270 are disposed in each of the subpixels SPr, SPg and SPb on substrate 101. The driving element 270 and the emitting element 280 are insulated from each other by planarizing layers 220 and 222.

[0056] The driving element 270 may be an ‘array part’ including the driving transistor 260, the switching transistors 230 and 240 and the storage capacitor 250 and driving each of the subpixels SPr, SPg and SPb. The emitting element 280 may be an array part for emission including an anode 223, a cathode 227 and an emitting layer 225 between the anode 223 and the cathode 227. The driving element 270 may be a first array part, and the emitting element 280 may be a second array part. The term ‘array part’ would be understood as the above by the skilled person.

[0057] Although one driving transistor 260, two switching transistors 230 and 240 and one storage capacitor 250 are shown in the embodiment of FIG. 3, it is not limited thereto.

[0058] The driving transistor 260 and the at least one switching transistor use an oxide semiconductor layer as an active layer. The oxide semiconductor layer formed of an oxide semiconductor material has an excellent effect of blocking leakage current and has a relatively low fabrication cost as compared with a polycrystalline silicon layer. For example, the oxide semiconductor layer may include indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO) and / or indium aluminum zinc oxide (IAZO). The embodiments of the present disclosure are not limited thereto. In the embodiment of the present disclosure, to reduce a power consumption and fabrication cost, the driving transistor 260 and the at least one switching transistor may be fabricated using an oxide semiconductor layer.

[0059] A transistor using a polycrystalline semiconductor layer including a polycrystalline semiconductor material, for example, polycrystalline silicon (poly-Si) has a relatively high operation speed and excellent reliability. In the embodiment of FIG. 3, one of the switching transistors may include a poly crystalline semiconductor layer and the others of the switching transistors may include an oxide semiconductor layer.

[0060] At least one of one driving transistor 260 and two switching transistors 230 and 240 is a positive (P) type transistor and the others of one driving transistor 260 and two switching transistors 230 and 240 are a negative (N) type transistor. For example, the driving transistor 260 may have a P type, and the transistor having an oxide semiconductor layer of two switching transistors 230 and 240 may have a N type.

[0061] The substrate 101 may have a multiple layer where at least one organic layer and at least one inorganic layer are alternately laminated. For example, the substrate 101 may have an organic layer including an organic material such as polyimide and an inorganic layer including an inorganic material such as silicon oxide (SiOx) alternately laminated with each other.

[0062] A lower buffer layer 201 may be disposed on the substrate 101. The lower buffer layer 201 may block permeation, for example by moisture. The lower buffer layer 201 may have a multiple layer of silicon oxide (SiOx). A second buffer layer may be further disposed on the lower buffer layer 201 for protection from a moisture.

[0063] A first switching transistor 230 (one of second to seventh transistors T2 to T7 (of FIG. 4)) may be disposed on the lower buffer layer 201. The first switching transistor 230 may use a poly crystalline semiconductor layer as an active layer. The first switching transistor 230 may include a first active layer 203 having a channel where an electron or a hole moves, a first gate electrode 206, a first source electrode 217S and a first drain electrode 217D.

[0064] The first active layer 203 may include a polycrystalline semiconductor material. The first active layer 203 may include a first channel region 203 C and a first source region 203S and a first drain region 203D at both sides of the first channel region 203C.

[0065] The first source region 203 S and the first drain region 203D may include a conductorized region by doping an intrinsic polycrystalline semiconductor pattern with an impurity of a V group or a III group, for example, phosphorus (P) or boron (B). The first channel region 203 C where the poly crystalline semiconductor material is kept as an intrinsic state may provide a moving path for an electron or a hole.

[0066] The first switching transistor 230 may include a first gate electrode 206 overlapping the first channel region 203C of the first active layer 203. A first gate insulating layer 202 may be disposed between the first gate electrode 206 and the first active layer 203.

[0067] The first switching transistor 230 may have a top gate type where the first gate electrode 206 is disposed over the first active layer 203. A first capacitor electrode 205 of the second switching transistor 240 and a second light shielding layer 204 of the storage capacitor 250 may be formed of a same material as the first gate electrode 206 through one mask process. As a result, a number of the mask processes may be reduced.

[0068] The first gate electrode 206 may include a metallic material. For example, the first gate electrode 206 may have a single layer or a multiple layer of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and an alloy thereof.

[0069] A first interlayer insulating layer 207 may be disposed on the first gate electrode 206. The first interlayer insulating layer 207 may include silicon nitride (SiNx). The first interlayer insulating layer 207 of silicon nitride (SiNx) may have a hydrogen particle. When a heat treatment process is performed after the first active layer 203 is formed and the first interlayer insulating layer 207 is formed on the first active layer 203, the hydrogen particle of the first interlayer insulating layer 207 penetrates into the first source region 203 S and the first drain region 203D to improve and stabilize a conductivity of the polycrystalline semiconductor material. The above process may be referred to as a hydrogenation process.

[0070] The first switching transistor 230 may further include an upper buffer layer 210, a second gate insulating layer 213 and a second interlayer insulating layer 216 sequentially on the first interlayer insulating layer 207. The first switching transistor 230 may be disposed on the second interlayer insulating layer 216 and may include a first source electrode 217S and a first drain electrode 217D connected to the first source region 203S and the first drain region 203D, respectively.

[0071] The upper buffer layer 210 may separate the first active layer 203 including a poly crystalline semiconductor material, the second active layer 212 of the second switching transistor 240 including an oxide semiconductor material and the third active layer 211 of the driving transistor 260 including an oxide semiconductor material. The upper buffer layer 210 may provide a base for the second active layer 212 and the third active layer 211.

[0072] A second interlayer insulating layer 216 may be disposed on the second gate electrode 215 of the second switching transistor 240 and the third gate electrode 214 of the driving transistor 260. Since the second interlayer insulating layer 216 is disposed on the second active layer 212 and the third active layer 211 including an oxide semiconductor material, the second interlayer insulating layer 216 may include an inorganic material without a hydrogen particle.

[0073] The first source electrode 217S and the first drain electrode 217D may have a single layer or a multiple layer of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and an alloy thereof.

[0074] The second switching transistor 240 (another of second to seventh transistors T2 to T7 (of FIG. 4)) may be disposed on the upper buffer layer 210 and may include the second active layer 212 including an oxide semiconductor material, the second gate insulating layer 213 covering the second active layer 212, the second gate electrode 215 on the second gate insulating layer 213, the second interlayer insulating layer 216 covering the second gate electrode 215, and the second source electrode 218S and the second drain electrode 218D on the second interlayer insulating layer 216.

[0075] The second switching transistor 240 may further include a second light shielding layer 204 disposed under the upper buffer layer 210 and overlapping the second active layer 212. The second light shielding layer 204 may include the same material as the first gate electrode 206 and may be disposed on the first gate insulating layer 202.

[0076] The second light shielding layer 204 may be electrically connected to the second gate electrode 215 to constitute a dual gate. When the second switching transistor 240 has a dual gate structure, a current flowthrough a second channel region 212C may be more accurately controlled. Further, since a display device is formed to have a smaller size, a display device of a relatively high resolution may be obtained. More accurate control of current flow through the second channel region 212C is provided by the second switching transistor having a dual gate structure because the current flows through upper and lower portions of the second channel region 212C by the second gate electrode 215 and the second light shielding layer 204. With the dual gate structure, as the current is controlled by two gate electrodes, the current flow is more accurately controlled compared with a single gate structure.

[0077] The second active layer 212 may include an oxide semiconductor material and may have a second channel region 212C, a second source region 212S and a second drain region 212D. The second channel region may have an intrinsic state not doped with an impurity, and the second source region 212S and the second drain region 212D may have a conductorization state doped with an impurity.

[0078] The second source electrode 218S and the second drain electrode 218D may have a single layer or a multiple layer of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and an alloy thereof.

[0079] The second source electrode 218S, the second drain electrode 218D, the first source electrode 217S and the first drain electrode 217D may be simultaneously formed on the second interlayer insulating layer 216 with the same material. As a result, a number of the mask processes may be reduced.

[0080] The third source electrode 219S and the third drain electrode 219D may be simultaneously formed with the second source electrode 218S, the second drain electrode 218D, the first source electrode 217S and the first drain electrode 217D on the second interlayer insulating layer 216 with the same material. As a result, a number of the mask processes may be reduced.

[0081] The driving transistor 260 (a first transistor T1 (of FIG. 4)) may be disposed on the upper buffer layer 210.

[0082] The driving transistor 260 may include a third active layer 211 including an oxide semiconductor material on the upper buffer layer 210, a second gate insulating layer 213 covering the third active layer 211, a third gate electrode 214 disposed on the second gate insulating layer 213 and overlapping the third active layer 211, the second interlayer insulating layer 216 covering the third gate electrode 214 and a third source electrode 219S and a third drain electrode 219D on the second interlayer insulating layer 216.

[0083] The driving transistor 260 may further include a first light shielding layer 208 disposed in the upper buffer layer 210 and overlapping the third active layer 211. The first light shielding layer 208 may be formed to be inserted (or accommodated) into the upper buffer layer 210.

[0084] For a structure where the first light shielding layer 208 is disposed in the upper buffer layer 210, the first light shielding layer 208 may be disposed on a first upper sub-buffer layer 210a over the first interlayer insulating layer 207. A second upper sub-buffer layer 210b may be disposed on the first light shielding layer 208 to cover the first light shielding layer 208 completely, and a third upper sub-buffer layer 210c may be disposed on the second upper sub-buffer layer 210b. For example, the upper buffer layer 210 may have a structure where the first upper sub-buffer layer 210a, the second upper sub-buffer layer 210b and the third upper sub-buffer layer 210c are sequentially laminated.

[0085] The first upper sub-buffer layer 210a and the third upper sub-buffer layer 210c may include silicon oxide (SiOx). When the first upper sub-buffer layer 210a and the third upper sub-buffer layer 210c include silicon oxide (SiOx) without a hydrogen particle, the first upper sub-buffer layer 210a and the third upper sub-buffer layer 210c may be provided as a base for the second switching transistor 240 and the driving transistor 260 using an oxide semiconductor material susceptible to a hydrogen particle for an active layer.

[0086] The second upper sub-buffer layer 210b may include silicon nitride (SiNx) having an excellent capturing ability for a hydrogen particle. The second upper sub-buffer layer 210b may surround a top surface and a side surface of the first light shielding layer 208 to seal the first light shielding layer 208 completely.

[0087] A hydrogen particle generated in a hydrogenation process of the first switching transistor 230 using a poly crystalline semiconductor material for an active layer may pass through the upper buffer layer 210 to deteriorate a reliability of an oxide semiconductor material on the upper buffer layer 210. For example, when a hydrogen particle penetrates into an oxide semiconductor material, a transistor including that oxide semiconductor material may have different threshold voltages or may have different conductivities of a channel according to a position where the oxide semiconductor material is disposed.

[0088] Since silicon nitride (SiNx) has an excellent capturing ability for a hydrogen particle as compared with silicon oxide (SiOx), deterioration of a reliability of the driving transistor 260 due to a hydrogen particle penetrating into an oxide semiconductor material may be prevented.

[0089] The first light shielding layer 208 may include a metallic material such as titanium (Ti) having an excellent capturing ability for a hydrogen particle. For example, the first light shielding layer 208 may have a single layer of titanium (Ti), a multiple layer of molybdenum (Mo) and titanium (Ti) or a single layer of an alloy of molybdenum (Mo) and titanium (Ti). In another embodiment, the first light shielding layer 208 may include another metallic material including titanium (Ti).

[0090] Titanium (Ti) may capture a hydrogen particle diffused in the upper buffer layer 210 to prevent a hydrogen particle from reaching the third active layer 211. When the first light shielding layer 208 of the driving transistor 260 is formed of a metallic material such as titanium (Ti) having a capturing ability for a hydrogen particle and is surrounded by silicon nitride (SiNx) having a capturing ability for a hydrogen particle, a reliability of a pattern of an oxide semiconductor material against a hydrogen particle is obtained.

[0091] Differently from the first upper sub-buffer layer 210a, the second upper sub-buffer layer 210b including silicon nitride (SiNx) is not disposed in the entire display area. Instead, the second upper sub-buffer layer 210b may be disposed on a portion of the first upper sub-buffer layer 210a to selectively cover the first light shielding layer 208. The second upper sub-buffer layer 210b may include a material such as silicon nitride (SiNx) different from a material of the first upper sub-buffer layer 210a. As a result, when the second upper sub-buffer layer 210b is disposed in the entire display area, the second upper sub-buffer layer 210b may be peeled off. To prevent the peeling, the second upper sub-buffer layer 210b may be selectively disposed on a portion where the first light shielding layer 208 is disposed. To explain, the first and second upper sub-buffer layers 210a and 210b include different insulating materials such as silicon oxide and silicon nitride. As a result, when the first and second upper sub-buffer layers 210a and 210b are formed to contact each other over the whole of the substrate 101, the second upper sub-buffer layer 210b may be peeled off due to a stress. In the present application, since the second upper sub-buffer layer 210b is formed on a portion of the first light shielding layer 208, the contact area between the first and second upper sub-buffer layers 210a and 210b is minimized which prevents peeling.

[0092] The first light shielding layer 208 and the second upper sub-buffer layer 210b may be disposed directly under the third active layer 211 to overlap the third active layer 211. The first light shielding layer 208 and the second upper sub-buffer layer 210b may have a size greater than a size of the third active layer 211 to completely overlap the third active layer 211.

[0093] The third source electrode 219S of the driving transistor 260 may be electrically connected to the first light shielding layer 208.

[0094] The storage capacitor 250 (Cs (of FIG. 4)) may store the data signal applied through the data line and may provide the data signal to the emitting element. The storage capacitor 250 may include two corresponding electrodes and a dielectric layer between the two electrodes. For example, the storage capacitor 250 may include a first capacitor electrode 205 having the same material and the same layer as the first gate electrode 206 and a second capacitor electrode 209 having the same material and the same layer as the first light shielding layer 208. The first interlayer insulating layer 207 and the first upper sub-buffer layer 210a may be disposed between the first capacitor electrode 205 and the second capacitor electrode 209. The first capacitor electrode 209 of the storage capacitor 250 may be electrically connected to the third source electrode 219S.

[0095] In an embodiment of FIG. 3, the storage capacitor 250 may be disposed at a side of the driving transistor 260. In another embodiment, the storage capacitor 250 may be disposed to be laminated with the driving transistor 260. When the storage capacitor 250 is laminated with the driving transistor 260, at least portion of the third source electrode 219S connected to the second capacitor electrode 209 may be omitted. For example, a fourth gate electrode may be further disposed on the third gate electrode 214 of the driving transistor 260. The third gate electrode 214 and the fourth gate electrode may be spaced apart from each other to constitute the storage capacitor 250.

[0096] A first planarizing layer 220 and a second planarizing layer 222 may be disposed on the driving element 270 to planarize the driving element 270. The first planarizing layer 220 and the second planarizing layer 222 may include an organic material such as polyimide and acrylic resin.

[0097] The emitting element 280 (De (of FIG. 4)) is disposed on the second planarizing layer 222. The emitting element 280 includes a first electrode 223 as an anode, a second electrode 227 as a cathode corresponding to the first electrode 223 and an emitting layer between the first electrode 223 and the second electrode 227. The first electrode 223 may be disposed in each subpixel.

[0098] The emitting element 280 may be connected to the driving element 270 through a connecting electrode 221 on the first planarizing layer 220. For example, the first electrode 223 of the emitting element 280 and the third drain electrode 219D of the driving transistor 260 of the driving element 270 may be connected to each other through the connecting electrode 221.

[0099] The first electrode 223 may contact the connecting electrode 221 exposed through a first contact hole CHI in the second planarizing layer 222. The connecting electrode 221 may contact the third drain electrode 219D exposed through a second contact hole CH2 in the first planarizing layer 220.

[00100] The first electrode 223 may have a multiple layer including a transparent conductive material and an opaque conductive material having a relatively high reflectance. For example, the first electrode 223 may have a single layer or a multiple layer including a transparent conductive material having a relatively high work function such as indium tin oxide (ITO) or indium zinc oxide (IZO) and an opaque conductive material such as aluminum (Al), silver (Ag), copper (Cu), lead (Pb), molybdenum (Mo), titanium (Ti) and an alloy thereof. For example, the first electrode 223 may have a structure where a transparent conductive layer, an opaque conductive layer and a transparent conductive layer are sequentially laminated or a structure where a transparent conductive layer and an opaque conductive layer are sequentially laminated.

[00101] The emitting layer 225 may include a hole assisting layer, an emitting material layer and an electron assisting layer sequentially on the first electrode 223 or an electron assisting layer, an emitting material layer and a hole assisting layer sequentially on the first electrode 223. A bank layer 224 may expose the first electrode 223 of each subpixel and may be referred to as a pixel defining layer. The bank layer 224 may include an opaque material, for example, a black organic material to prevent an optical interference between the adjacent subpixels. For example, the bank layer 224 may include a light shielding material of at least one of a color pigment, an organic black and a carbon. A spacer 226 may be disposed on the bank layer 224.

[00102] The second electrode 227 of a cathode is disposed on a top surface and a side surface of the emitting layer 225 to face the first electrode 223 with the emitting layer 225 interposed therebetween. The second electrode 227 may be disposed in the entire display area as one body. When the organic light emitting diode display device has a top emission type, the second electrode 227 may include a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[00103] An encapsulating element 228 for preventing penetration of a moisture may be further disposed on the second electrode 227. The encapsulating element 228 may include a first inorganic encapsulating layer 228a, a second organic encapsulating layer 228b and a third inorganic encapsulating layer 228c sequentially laminated.

[00104] The first inorganic encapsulating layer 228a and the third inorganic encapsulating layer 228c of the encapsulating element 228 may include an inorganic material such as silicon oxide (SiOx). The second organic encapsulating layer 228b of the encapsulating element 228 may include an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin and polyimide resin.

[00105] In FIG. 4, each of red, green and blue subpixels SPr, SPg and SPb (SP) of the display panel 140 of the display device 110 according to an embodiment of the present disclosure includes first to seventh transistors T1 to T7, a storage capacitor Cs and a light emitting diode De. At least one of the first to seventh transistors T1 to T7 may be an oxide semiconductor thin film transistor, and the others of the first to seventh transistors T1 to T7 may be low temperature polycrystalline silicon thin film transistor.

[00106] For example, the first, second, fifth, sixth and seventh transistors Tl, T2, T5, T6 and T7 may be a positive (P) type low temperature polycrystalline silicon thin film transistor, and the third and fourth transistors T3 and T4 may be a negative (N) type oxide semiconductor thin film transistor.

[00107] Alternatively, the second, fifth, sixth and seventh transistors T2, T5, T6 and T7 may be a low temperature polycrystalline silicon thin film transistor, and the first, third and fourth transistors T1, T3 and T4 may be an oxide semiconductor thin film transistor.

[00108] The first transistor T1 of a driving transistor is switched according to a voltage of the first capacitor electrode 205 of the storage capacitor Cs. A gate electrode of the first transistor T1 is connected to the first capacitor electrode 205 of the storage capacitor Cs, a drain electrode of the third transistor T3 and a drain electrode of the fourth transistor T4, a source electrode of the first transistor T1 is connected to a source electrode of the second transistor T2 and a drain electrode of the fifth transistor T5, and a drain electrode of the first transistor T1 is connected to a source electrode of the third transistor T3 and a source electrode of the sixth transistor T6.

[00109] The second transistor T2 of a switching transistor is switched according to an nth gate2 signal Sc2(n). A gate electrode of the second transistor T2 is connected to the nth gate2 signal Sc2(n), a source electrode of the second transistor T2 is connected to a source electrode of the first transistor T1 and a drain electrode of the fifth transistor T5, and a drain electrode of the second transistor T2 is connected to the data signal Vdata.

[00110] The third transistor T3 of a sensing transistor is switched according to an nth gatel signal Scl(n). A gate electrode of the third transistor T3 is connected to the nth gatel signal Scl(n), a source electrode of the third transistor T3 is connected to a drain electrode of the first transistor T1 and a source electrode of the sixth transistor T6, and a drain electrode of the third transistor T3 is connected to a gate electrode of the first transistor T1, a first capacitor electrode 205 of the storage capacitor 205 and a drain electrode of the fourth transistor T4.

[00111] The fourth transistor T4 is switched according to an (n-l)th gatel signal Scl(n-l). A gate electrode of the fourth transistor T4 is connected to the (n-l)th gatel signal Scl(n-l), a source electrode of the fourth transistor T4 is connected to an initial voltage Vini, and a drain electrode of the fourth transistor T4 is connected to a gate electrode of the first transistor Tl, a first capacitor electrode 205 of the storage capacitor Cs and a drain electrode of the third transistor T3.

[00112] The fifth transistor T5 is switched according to an nth emission signal Em(n). A gate electrode of the fifth transistor T5 is connected to the nth emission signal Em(n), a source electrode of the fifth transistor T5 is connected to a high level voltage Vdd and the second capacitor electrode 209 of the storage capacitor Cs, and a drain electrode of the fifth transistor T5 is connected to a source electrode of the first transistor Tl and a source electrode of the second transistor T2.

[00113] The sixth transistor T6 of an emission transistor is switched according to an nth emission signal Em(n). A gate electrode of the sixth transistor T6 is connected to the nth emission signal Em(n), a source electrode of the sixth transistor T6 is connected to a drain electrode of the first transistor Tl and a source electrode of the third transistor T3, and a drain electrode of the sixth transistor T6 is connected to an anode of the light emitting diode De and a source electrode of the seventh T7.

[00114] The seventh transistor T7 is switched according to an nth gate2 signal Sc2(n). A gate electrode of the seventh transistor T7 is connected to the nth gate2 signal Sc2(n), a source electrode of the seventh transistor T7 is connected to a drain electrode of the sixth transistor T6 and an anode of the light emitting diode De, and a drain electrode of the seventh transistor T7 is connected to an anode reset voltage Var.

[00115] The storage capacitor Cs stores the data signal Vdata and the threshold voltage Vth. A first capacitor electrode 205 of the storage capacitor Cs is connected to the gate electrode of the first transistor Tl and the drain electrode of the fourth transistor T4, and a second capacitor electrode 209 of the storage capacitor Cs is connected to the high level voltage Vdd and the source electrode of the fifth transistor T5.

[00116] The light emitting diode De is connected between the sixth and seventh transistors T6 and T7 and the low level voltage Vss to emit a light of a luminance proportional to a current of the first transistor Tl. An anode of the light emitting diode De is connected to the drain electrode of the sixth transistor T6 and the source electrode of the seventh transistor T7, and a cathode of the light emitting diode De is connected to the low level voltage Vss. The high level voltage Vdd and the low level voltage Vss can be referred to as high level and low level voltage lines respectively.

[00117] The source electrode of the first transistor Tl, the source electrode of the second transistor T2 and the drain electrode of the fifth transistor T5 constitute a first node Nl, and the gate electrode of the first transistor Tl, the drain electrode of the third transistor T3, the first capacitor electrode 205 of the storage capacitor Cs and the drain electrode of the fourth transistor T4 constitute a second node N2.

[00118] In FIG. 5, the first gate driving unit 130 of the display device 110 according to an embodiment of the present disclosure includes a gatel signal block Bscl, an odd gate2 signal block Bsc2o and an even gate2 signal block Bsc2e, and the second gate driving unit 135 of the display device 110 according to an embodiment of the present disclosure includes an emission signal block Bem, an odd gate2 signal block Bsc2o and an even gate2 signal block Bsc2e. The display panel 140 includes a pixel area PA and a link area LA.

[00119] The gatel signal block Bscl, the odd gate2 signal block Bsc2o and the even gate2 signal block Bsc2e at one side of the pixel area PA may be one stage of a shift register, and the emission signal block Bem, the odd gate2 signal block Bsc2o and the even gate2 signal block Bsc2e at an opposite side of the pixel area PA may be one stage of a shift register. The shift register may include a plurality of stages connected to each other by a cascade type.

[00120] In the first gate driving unit 130, the gatel signal block Bscl generates a gatel signal Scl(n) and Scl(n-l) (of FIG. 6), the odd gate2 signal block Bsc2o generates an odd gate2 signal Sc2o(n) (of FIG. 6), and the even gate2 signal block Bsc2e generates the even gate2 signal Sc2e(n) (of FIG. 6).

[00121] In the second gate driving unit 135, the emission signal block Bem generates an emission signal Em(n) (of FIG. 6), the odd gate2 signal block Bsc2o generates an odd gate2 signal Sc2o(n) (of FIG. 6), and the even gate2 signal block Bsc2e generates the even gate2 signal Sc2e(n) (of FIG. 6).

[00122] The gatel signal Scl (n) and Scl(n-l) of the gatel signal block Bscl is supplied to odd and even pixel lines of the pixel area PA through the link area PA. The odd gate2 signal Sc2o(n) of the odd gate2 signal block Bsc2o is supplied to the odd pixel line through the link area LA, and the even gate2 signal Sc2e(n) of the even gate2 signal block Bsc2e is supplied to the even pixel line of the pixel area PA through the link line LA.

[00123] The even pixel line may be a row of pixels arranged in even order from a top portion of the display panel 140, and the odd pixel line may be a row of pixels arranged in odd order from the top portion of the display panel 140.

[00124] In another embodiment, the first and second driving units 130 and 135 may be symmetrically constituted with respect to each other. For example, each of the first and second gate driving units 130 and 135 may include the gatel signal block Bscl, the oddgate2 signal block Bsc2o, the even gate2 signal block Bsc2e and the emission block Bem.

[00125] Driving the display panel 140 of the display device 110 by adjusting a rising timing of the gatel signal will be illustrated with reference to drawings.

[00126] FIG. 6 is a view showing a plurality of signals of a display device according to an embodiment of the present disclosure, and FIG. 7 is a view showing a view showing a data signal and a gate2 signal of a display device according to an embodiment of the present disclosure.

[00127] In FIGs. 6 and 7, a horizontal synchronization signal Hsyn output from the timing controlling unit 120 is a reference of the timing of the data signal Vdata to one pixel line of the display panel 140. During an interval from a falling timing of one pulse where the horizontal synchronization signal Hsyn is changed from a logic high voltage Vh to a logic low voltage VI to a falling timing of a next pulse, the data signal Vdata is supplied to one pixel line. The pulse of the horizontal synchronization signal Hsyn may be repeated by one horizontal period (1H).

[00128] The nth gatel signal Scl(n) output from the gatel signal block Bscl switches the third and fourth transistors T3 and T4 of each subpixel SPr, SPg and SPb of the odd and even pixel lines. During a first period TP1 of an initialization period where the nth gatel signal Scl(n) and the (n-1 )th gatel signal Scl(n-l) have a logic high voltage Vh, the third and fourth transistors T3 and T4 are turned on such that the initial voltage Vini is applied to the gate electrode and the drain electrode of the first transistor Tl. As a result, the gate electrode and the drain electrode of the first transistor Tl is initialized.

[00129] The nth odd gate2 signal Sc2o(n) and the nth even gate2 signal Sc2e(n) outputted from the odd and even gate2 signal blocks Bsc2o and Bsc2e switch the second and seventh transistors T2 and T7 of each subpixel SPr, SPg and SPb of the odd and even pixel lines, respectively. During a second period TP2 of a sampling period where the nth odd gate2 signal Sc2o(n) and the nth even gate2 signal Sc2e(n) have a logic low voltage VI, the second and seventh transistors T2 and T7 are turned on such that the data signal Vdata is applied to the source electrode of the first transistor T1 and the anode reset voltage Var is applied to the anode of the light emitting diode De. As a result, the threshold voltage Vth of the first transistor T1 is stored in the storage capacitor Cs and the anode of the light emitting diode De is reset.

[00130] The nth emission signal Em(n) output from the emission signal blocks Bem switches the fifth and sixth transistors T5 and T6 of each subpixel SPr, SPg and SPb. During a third period TP3 (not shown) of an emission period where the nth emission signal Em(n) has a logic low voltage VI, the fifth and sixth transistors T5 and T6 are turned on such that the high level voltage Vdd is applied to the source electrode of the first transistor T1 and the current of the first transistor T1 is transmitted to the light emitting diode De. As a result, the light emitting diode De emits a light corresponding to the data signal Vdata.

[00131] In the display device 110 according to an embodiment of the present disclosure, since the plurality of horizontal link lines HL are disposed in the display area DA, a parasitic capacitor is formed between the plurality of horizontal link lines HL transmitting the data signal Vdata and the gate line GL transmitting the gatel signal Scl, and a coupling is generated between the data signal Vdata and the gatel signal Scl.

[00132] At a rising timing trs where the nth gatel signal Scl(n) corresponding to the nth odd pixel line and the nth even pixel line is changed from the logic low voltage VI to the logic high voltage Vh, a ripple RP is caused in the data signal Vdata due to the coupling between the horizontal link line HL and the gate line GL.

[00133] When an (n-a)th odd gate2 signal Sc2o(n-a) corresponding to an (n-a)th odd pixel line (an odd pixel line previous by a to the nth odd pixel line) has a state of a logic low voltage, a sampling is performed before the data signal Vdata is saturated and stabilized. As a result, the data signal Vdata stored in the storage capacitor Cs is distorted, and deterioration such as a slanted line crosstalk along a diagonal direction is caused in the display area DA adjacent to the data driving unit 125 of the display panel 140 due to the distortion of the data signal Vdata.

[00134] A first rising timing trsl of the nth gatel signal Scl(n) has a first time gap TGI from a falling timing of a nearest pulse of the horizontal synchronization signal Hsyn, and a falling timing of the nth odd gate2 signal Sc2o(n) has a second time gap TG2 from a falling timing of a nearest pulse of the horizontal synchronization signal Hsyn. A second rising timing trs2 of the nth odd gate2 signal Sc2o(n) has a third time gap TG3 from a falling timing of a nearest pulse of the horizontal synchronization signal Hsyn, and a falling timing of the nth even gate2 signal Sc2e(n) has a fourth time gap TG4 from a falling timing of a nearest pulse of the horizontal synchronization signal Hsyn.

[00135] When the first rising timing trsl of the nth gatel signal Scl(n) is previous to (before) the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) (Casel) (the first time gap TGI is smaller than the third time gap TG3 (TG1<TG3)), the ripple RP is generated in the data signal Vdata due to a voltage change at the first rising timing trsl of the nth gatel signal Scl(n). Since a sampling is performed to the data signal Vdata of the (n-a)th odd pixel line according to a state of the logic low voltage VI of the (n-a)th odd gate2 signal Sc2o(n-a) before the data signal Vdata is saturated to be stabilized, the data signal Vdata stored in the storage capacitor Cs is distorted to cause deterioration such as a slanted line crosstalk along a diagonal direction.

[00136] In the display device 110 according to an embodiment of the present disclosure, the first rising timing trsl of the nth gatel signal Scl(n) is determined to be simultaneous with the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) (Case2) (the first time gap TGI is simultaneous with the third time gap TG3 (TG1=TG3)) or to be next to (after) the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) (Case3) (the first time gap TGI is greater than the third time gap TG3 (TG1>TG3)).

[00137] Although the ripple is generated in the data signal Vdata due to the voltage change at the first rising timing trsl of the nth gatel signal Scl(n), a sampling to the data signal Vdata of the (n-a)th odd pixel line is performed according to the logic low voltage VI of the (n-a)th odd gate2 signal Sc2o(n-a) in a state where the data signal Vdata before the ripple RP is saturated to be stabilized. As a result, distortion of the data signal Vdata stored m the storage capacitor Cs is reduced or minimized and deterioration such as a slanted line crosstalk along a diagonal direction is prevented.

[00138] In the display device 110 according to an embodiment of the present disclosure, since the first rising timing trsl of the nth gatel signal Scl(n) is determined to be simultaneous with or next to (after) the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) (the first time gap TGI is equal to or greater than the third time gap TG3 (TG1>TG3)), the sampling to the data signal Vdata of the (n-a)th odd pixel line is performed before the ripple RP of the data signal Vdata. As a result, the distortion of the data signal Vdata stored in the storage capacitor Cs is reduced or minimized and deterioration such as a slanted line crosstalk along a diagonal direction is prevented.

[00139] The rising timing of each of the gatel signal and the odd gate2 signal may be classified into a rising start timing and a rising end timing. The rising start timing of the gatel signal may be simultaneous with the rising end timing of the odd gate2 signal. For example, the first rising timing trsl may be classified into a first rising start timing and a first rising end timing, and an interval between the first rising start timing and the first rising end timing may be defined as a first rising time (or a first rising slew) (first rising end timing=first rising start timing+first rising time). The second rising timing trs2 may be classified into a second rising start timing and a second rising end timing, and an interval between the second rising start timing and the second rising end timing may be defined as a second rising time (or a second rising slew) (second rising end timing=second rising start timing+second rising time). The first rising start timing of the nth gatel signal may be determined to be simultaneous with the second rising end timing of the (n-a)th odd gate2 signal Sc2o(n-a). That is, the first time gap TGI may be determined to be a sum of the third time gap TG3 and the second rising time (TGl=TG3+second rising time). Since the sampling to the data signal Vdata of the (n-a)th pixel line is completed before the ripple of the data signal Vdata, distortion of the data signal Vdata stored in the storage capacitor Cs is reduced or minimized and deterioration such as a slanted line crosstalk along a diagonal direction is prevented.

[00140] When the first rising timing trsl of the nth gatel signal Scl(n) is excessively delayed compared to the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) (the first time gap TGI is excessively greater than the third time gap TG3 (TG1»TG3)), the first rising timing trsl of the nth gatel signal Scl(n) overlaps the state of the logic low voltage VI of the (n-a)th even gate2 signal Sc2e(n-a). As a result, during the sampling to the (n-a)th even pixel line, the data signal Vdata stored in the storage capacitor Cs may be distorted due to the ripple RP of the data signal Vdata to cause deterioration such as a slanted line crosstalk along a diagonal direction.

[00141] In the display device 110 according to an embodiment of the present disclosure, since the first rising timing trsl of the nth gatel signal Scl(n) is determined to be previous to (before) the second falling timing tfl2 of the (n-a)th even gate2 signal Sc2e(n-a) (the first time gap TGI is smaller than the fourth time gap TG4 (TG1<TG4)), the sampling to the data signal Vdata of the (n-a)th even pixel line is performed after the ripple RP of the data signal Vdata. As a result, distortion of the data signal Vdata stored in the storage capacitor Cs is reduced or minimized and deterioration such as a slanted line crosstalk along a diagonal direction is prevented.

[00142] For example, distortion of the data signal Vdata may be reduced or minimized and deterioration such as a slanted line crosstalk along a diagonal direction may be prevented by determining the first rising timing trsl of the nth gatel signal Scl(n) to be previous to (before) a timing corresponding to a sum of the third time gap TG3 and 1 / 10 of a fifth time gap TG5 (=TG4-TG3) between the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) and the second falling timing tf!2 of the (n-a)th even gate2 signal Sc2e(n-a) (determining the first time gap TGI to be smaller than a sum of the third time gap TG3 and 1 / 10 of the fifth time gap TG5 (TG1<(TG3+(1 / 1O)*TG5), TGl<(TG3+(l / 10)*(TG4-TG3)).

[00143] An effect of preventing a slanted line crosstalk along a diagonal line will be illustrated with reference to a drawing.

[00144] FIG. 8 is a view showing a crosstalk cognition degree with respect to a first time gap of a display device according to an embodiment of the present disclosure.

[00145] In FIG. 8, for a section (TGI <TG3) where the first time gap TGI from the falling timing of the nearest pulse of the horizontal synchronization signal Hsyn to the first rising timing trsl of the nth gatel signal Scl(n) is smaller than the third time gap TG3 from the falling timing of the nearest pulse of the horizontal synchronization signal Hsyn to the second rising timing trs2 of the nth odd gate2 signal Sc2o(n), a crosstalk cognition degree decreases as the first time gap TGI increases. When the first time gap TGI is equal to the third time gap TG3, the crosstalk cognition degree has a minimum value. For a section (TG1>TG3) where the first time gap TGI is greater than the third time gap TG3, the crosstalk cognition degree increases as the first time gap TGI increases.

[00146] While a luminance difference between the slanted line crosstalk and a periphery under a condition where the slanted line crosstalk is deteriorated (for example, TG1«TG3) is about 27 06 25 7.6%, a luminance difference between the slanted line crosstalk and a periphery under a condition where the slanted line crosstalk is optimized (for example, TG1=TG3) is about 2.4% (acceptable reference value level). As a result, the slanted line crosstalk along a diagonal direction is reduced or minimized.

[00147] Since the first rising timing trsl of the nth gatel signal Scl(n) is determined to be simultaneous with or next to (after) the second rising timing trs2 of the (n-a)th odd gate2 signal Sc2o(n-a) and to be previous to (before) the second falling timing tf!2 of the (n-a)th even gate2 signal Sc2e(n-a) (the first time gap TGI is determined to be equal to or greater than the third time gap TG3 and to be smaller than the fourth time gap TG4 (TG3<TG1<TG4)), the sampling to the data signal Vdata of the (n-a)th odd pixel line and the (n-a)th even pixel line is performed before occurrence of the ripple RP and after extinction of the ripple RP. As a result, distortion of the data signal Vdata stored in the storage capacitor Cs is reduced or minimized and deterioration such as a slanted line crosstalk along a diagonal direction is prevented.

[00148] Consequently, in the display device 110 according to an embodiment of the present disclosure, since a timing of a plurality of gate signals is adjusted, a slanted line crosstalk along a diagonal direction in a display panel where a link line is disposed in a display area is reduced or minimized.

[00149] Since a sampling is performed after a data signal is saturated, distortion of a data signal and a slanted line crosstalk along a diagonal direction are reduced or minimized and a display quality of an image is improved. intended that the present disclosure cover the modifications and variations of this disclosure provided they come within the scope of the appended claims. Also disclosed herein: 1. A display device, comprising: a timing controlling unit arranged to generate image data, a data control signal and a gate control signal; a data driving unit arranged to generate a data signal using the image data and the data control signal; a gate driving unit arranged to generate a gatel signal, an odd gate2 signal, an even gate2 signal and an emission signal using the gate control signal; and a display panel arranged to display an image using the gatel signal, the odd gate2 signal, the even gate2 signal and the emission signal, wherein a rising timing of the gatel signal is simultaneous with or next to a rising timing of the odd gate2 signal. 2. The display device of clause 1, wherein the rising timing of each of the gatel signal and the odd gate2 signal is classified into a rising start timing and a rising end timing, and wherein the rising start timing of the gatel signal is simultaneous with the rising end timing of the odd gate2 signal. 3. The display device of clause 1, wherein the rising timing of the gatel signal is previous to a falling timing of the even gate2 signal. 4. The display device of any of clauses 1 to 3, wherein the gatel signal includes an nth gatel signal, the odd gate2 signal includes an nth odd gate2 signal and an (n-a)th gate2 signal, and the even gate2 signal includes an nth even gate2 signal and an (n-a)th even gate2 signal, and wherein a first time gap from a falling timing of a nearest pulse of a horizontal synchronization signal to a rising timing of the nth gatel signal is equal to or greater than a third time gap from a falling timing of the nearest pulse of the horizontal synchronization signal to a rising timing of the (n-a)th odd gate2 signal and smaller than a fourth time gap from the falling timing of the nearest pulse of the horizontal synchronization signal to a falling timing of the (n-a)th even gate2 signal. 5. The display device of clause 4, wherein the first time gap is smaller than a sum of the third time gap and 1 / 10 of a fifth time gap from the rising timing of the (n-a)th odd gate2 signal to the falling timing of the (n-a)th even gate2 signal. 6. The display device of any of clauses 1 to 5, wherein the display panel includes an odd pixel line and an even pixel line, wherein the gatel signal is supplied to the odd pixel line and the even pixel line, and wherein the odd gate2 signal and the even gate2 signal are supplied to the odd pixel line and the even pixel line, respectively. 7. The display device of any of clauses 1 to 6, wherein the gate driving unit includes first and second gate driving units disposed in both side portions, respectively, of the display panel, wherein the first gate driving unit includes a gatel signal block generating the gatel signal, an odd gate2 signal block generating the odd gate2 signal and an even gate2 signal block generating the even gate2 signal, and wherein the second gate driving unit includes an emission signal block generating the emission signal, the odd gate2 signal block and the even gate2 signal block. 8. The display device of any of clauses 1 to 7, wherein the display panel includes a display area at a central portion thereof and a non-display area surrounding the display area, wherein a plurality of pixels, a plurality of gate lines, a plurality of data lines, a plurality of vertical link lines and a plurality of horizontal link lines are disposed in the display area, and wherein the plurality of data lines and the plurality of vertical link lines are connected to the data driving unit, and the plurality of horizontal link lines connect the plurality of vertical link lines and the plurality of data lines 9. The display device of any of clauses 1 to 8, wherein the display panel includes a plurality of subpixels, and wherein each of the plurality of subpixels comprises: a storage capacitor connected to a high level voltage; a first transistor switched according to a voltage of a first capacitor electrode of the storage capacitor; a second transistor switched according to the gate2 signal and connected to the data signal and the first transistor; a third transistor switched according to the gatel signal and connected to the storage capacitor and the first transistor; a fourth transistor switched according to the gatel signal and connected to the storage capacitor and an initial voltage; a fifth transistor switched according to the emission signal and connected to the high level voltage and the first transistor; a sixth transistor switched according to the emission signal and connected to the first transistor; a seventh transistor switched according to the gate2 signal and connected to an anode reset voltage and the sixth transistor; and a light emitting diode connected between the sixth transistor and a low level voltage. 10. The display device of clause 9, wherein at least one of the first to seventh transistors is an oxide semiconductor thin film transistor. 11. The display device of any of clauses 1 to 5 or 7 to 10, wherein the display panel includes an odd pixel line and an even pixel line, and wherein at the rising timing of the odd gate2 signal or the even gate2 signal, a sampling to a data signal of the odd pixel line or the even pixel line is ended. 12. The display device of clause 2, wherein the sampling is performed after the data signal is saturated and stabilized. Also disclosed herein are the following clauses: 1. A display device, comprising: a storage capacitor connected to a high level voltage line; a first transistor switched according to a voltage of a first capacitor electrode of the storage capacitor; a second transistor switched according to a gate2 signal and connected to a data signal and the first transistor; a third transistor switched according to a gatel signal and connected to the storage capacitor and the first transistor; a fourth transistor switched according to the gatel signal and connected to the storage capacitor and an initial voltage; a fifth transistor switched according to an emission signal and connected to the high level voltage and the first transistor; a sixth transistor switched according to the emission signal and connected to the first transistor; and a light emitting diode connected between the sixth transistor and a low level voltage line. 2. The display device of clause 1 wherein the gate2 signal comprises at least one of an odd gate2 signal or an even gate2 signal. 3. The display device of clause 1 or 2 wherein a rising timing of the gatel signal is not earlier than a rising timing of the odd gate2 signal. 4. The display device of clause 2, wherein the rising timing [rising edge] of each of the gatel signal and the odd gate2 signal is classified into a rising start timing and a rising end timing, and wherein the rising start timing of the gatel signal is simultaneous with the rising end timing of the odd gate2 signal. 5. The display device of any preceding clause, wherein the rising timing of the gatel signal is previous to a falling timing of the even gate2 signal. 6. The display device of any of clauses 2 to 5 further comprising a gate driving unit arranged to generate the gatel signal, the odd gate2 signal, the even gate2 signal and the emission signal using a gate control signal; and a display panel arranged to display an image using the gatel signal, the odd gate2 signal, the even gate2 signal and the emission signal, 7. The display device of clause 6, wherein the display panel includes an odd pixel line and an even pixel line, and wherein at the rising timing of the odd gate2 signal or the even gate2 signal, a sampling to a data signal of the odd pixel line or the even pixel line is ended. 8. The display device of clause 7, wherein the sampling is performed after the data signal is saturated and stabilized. 9. The display device of clause 1, wherein the rising timing of each of the gatel signal and the odd gate2 signal is the interval between a respective rising start timing and a respective rising end timing, and wherein the rising start timing of the gatel signal is simultaneous with the rising end timing of the odd gate2 signal. 10. The display device of any preceding clause, wherein the gatel signal includes an nth gatel signal, the odd gate2 signal includes an nth odd gate2 signal and an (n-a)th gate2 signal, and the even gate2 signal includes an nth even gate2 signal and an (n-a)th even gate2 signal, and wherein a first time gap from a falling timing of a nearest pulse of a horizontal synchronization signal to a rising timing of the nth gatel signal is equal to or greater than a third time gap from a falling timing of the nearest pulse of the horizontal synchronization signal to a rising timing of the (n-a)th odd gate2 signal and smaller than a fourth time gap from the falling timing of the nearest pulse of the horizontal synchronization signal to a falling timing of the (n-a)th even gate2 signal. 11. The display device of clause 10, wherein the first time gap is smaller than a sum of the third time gap and 1 / 10 of a fifth time gap from the rising timing of the (n-a)th odd gate2 signal to the falling timing of the (n-a)th even gate2 signal. 12. The display device of any of clauses 6 to 11, wherein the display panel includes an odd pixel line and an even pixel line, wherein the gatel signal is supplied to the odd pixel line and the even pixel line, and wherein the odd gate2 signal and the even gate2 signal are supplied to the odd pixel line and the even pixel line, respectively. 13. The display device of any of clauses 6 to 12, wherein the gate driving unit includes first and second gate driving units disposed in side portions, respectively, of the display panel, wherein the first gate driving unit includes a gatel signal block generating the gatel signal, an odd gate2 signal block generating the odd gate2 signal and an even gate2 signal block generating the even gate2 signal, and wherein the second gate driving unit includes an emission signal block generating the emission signal, the odd gate2 signal block and the even gate2 signal block. 14. The display device of any of clauses 6 to 13, wherein the display panel includes a display area at a central portion thereof and a non-display area surrounding the display area, wherein a plurality of pixels, a plurality of gate lines, a plurality of data lines, a plurality of vertical link lines and a plurality of horizontal link lines are disposed in the display area, and wherein the plurality of data lines and the plurality of vertical link lines are connected to a data driving unit, and the plurality of horizontal link lines connect the plurality of vertical link lines and the plurality of data lines 15. The display device of any of clauses 1 to 13 further comprising a timing controlling unit arranged to generate image data, a data control signal and a gate control signal; a data driving unit arranged to generate a data signal using the image data and the data control signal; 16. The display device of any of clauses 6 to 16, wherein the gate driving unit is formed in a non-display area of a substrate of the display panel. 17. The display device of any preceding clause wherein a source electrode of the second transistor T2 is connected to a source electrode of the first transistor T1 and a drain electrode of the fifth transistor T5, and a drain electrode of the second transistor T2 is connected to the data signal Vdata. 18. The display device of any preceding clause further comprising a seventh transistor switched according to the gate2 signal and connected to an anode reset voltage and the sixth transistor. 19. The display device of any preceding clause, wherein at least one of the first to sixth transistors is an oxide semiconductor thin film transistor.

Claims

27 06 251. A display device, comprising:a display panel including a plurality of subpixels;a data driving unit is configured to supply a data signal to the plurality of subpixels;a first gate driving unit is configured to supply a gatel signal to the plurality of sub pixels, anda second gate driving unit is configured to supply an odd gate2 signal and an even gate2 signal to the plurality of subpixels,wherein at least one of the plurality of subpixels comprises:a storage capacitor connected to a high level voltage line;a driving transistor connected to the storage capacitor; anda light emitting diode connected between the driving transistor and a low level voltage line,wherein a rising timing of the gatel signal is not earlier than a rising timing of an odd gate2 signal.

2. The display device of claim 1, wherein the at least one of the plurality of subpixels further comprises:a second transistor switched according to one of the odd gate2 signal and the even gate2 signal and connected to the data signal and the driving transistor;a third transistor switched according to the gatel signal and connected to the storage capacitor and the driving transistor;27 06 25a fourth transistor switched according to the gatel signal and connected to the storage capacitor and an initial voltage;a fifth transistor switched according to an emission signal and connected to the high level voltage line and the driving transistor; anda sixth transistor switched according to the emission signal and connected to the driving transistor.

3. The display device of claim 2, wherein the at least one of the plurality of subpixels further comprises a seventh transistor switched according to one of the odd gate2 signal and the even gate2 signal and connected to an anode reset voltage and the sixth transistor.

4. The display device of claim 2 or 3, wherein at least one of the first to sixth transistors is an oxide semiconductor thin film transistor.

5. The display device of any preceding claim, wherein the first gate driving unit includes a gatel signal block configured to generate the gatel signal.

6. The display device of claim 5, wherein the first gate driving unit further includes an odd gate2 signal block configured to generate the odd gate2 signal and an even gate2 signal block configured to generate the even gate2 signal.

7. The display device of any preceding claim, wherein the second gate driving unit includes an odd gate2 signal block configured to generate the odd gate2 signal and an even gate2 signal block configured to generate the even gate2 signal.27 06 258. The display device of claim 7, wherein the second gate driving unit further includes an emission signal block configured to generate an emission signal.

9. The display device of any preceding claim, wherein the display panel includes a pixel area and a link area,wherein the gatel signal is supplied to the pixel area through the link area, andwherein the odd gate2 signal and the even gate2 signal are supplied to the pixel area through the link area.

10. The display device of any preceding claim, wherein the display panel includes a display area at a central portion thereof and a non-display area surrounding the display area,wherein a plurality of data lines, a plurality of vertical link lines and a plurality of horizontal link lines are disposed in the display area,wherein the plurality of vertical link lines are parallel to and spaced apart from the plurality of data lines, andwherein the plurality of horizontal link lines cross the plurality of data lines and are spaced apart from each other.

11. The display device of claim 10, wherein a portion of the plurality of data lines and a portion of the plurality of vertical link lines are connected to the data driving unit, andwherein the plurality of horizontal link lines connect the portion of the plurality of vertical link lines and another portion of the plurality of data lines that are not connected to the data driving unit.27 06 2512. The display device of any preceding claim, wherein the rising timing of each of the gatel signal and the odd gate2 signal is classified into a rising start timing and a rising end timing, andwherein the rising start timing of the gatel signal is simultaneous with the rising end timing of the odd gate2 signal.

13. The display device of any preceding claim, wherein the rising timing of the gatel signal is before a falling timing of the even gate2 signal.

14. The display device of any preceding claim, wherein the display panel includes an odd pixel line and an even pixel line, andwherein at the rising timing of the odd gate2 signal or the even gate2 signal, a sampling to the data signal of the odd pixel line or the even pixel line is ended.

15. The display device of claim 14, wherein the sampling is performed after the data signal is saturated and stabilized.

16. The display device of any preceding claim, wherein the gatel signal includes an nth gatel signal, the odd gate2 signal includes an nth odd gate2 signal and an (n-a)th gate2 signal, and the even gate2 signal includes an nth even gate2 signal and an (n-a)th even gate2 signal, andwherein a first time gap from a falling timing of a nearest pulse of a horizontal synchronization signal to a rising timing of the nth gatel signal is equal to or greater than a third time gap from a falling timing of the nearest pulse of the horizontal synchronization signal to a rising timing of the (n-a)th odd gate2 signal and smaller than a fourth time gap from the27 06 25falling timing of the nearest pulse of the horizontal synchronization signal to a falling timing of the (n-a)th even gate2 signal.

17. The display device of claim 16, wherein the first time gap is smaller than a sum of the third time gap and 1 / 10 of a fifth time gap from the rising timing of the (n-a)th odd gate2 signal to the falling timing of the (n-a)th even gate2 signal.

18. The display device of any preceding claim, wherein the display panel includes an odd pixel line and an even pixel line,wherein the gatel signal is supplied to the odd pixel line and the even pixel line, and wherein the odd gate2 signal and the even gate2 signal are supplied to the odd pixel line and the even pixel line, respectively.

19. The display device of any preceding claim, further comprising a timing controlling unit is configured to generate image data, a data control signal and a gate control signal,wherein the data driving unit is configured to generate the data signal using the image data and the data control signal.

20. The display device of any preceding claim, wherein the first and second gate driving units are in a non-display area of a substrate of the display panel.

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