Light-emitting device, display apparatus, electronic equipment, light-emitting apparatus, and lighting apparatus

Abstract

To provide a novel display apparatus excellent in convenience, usefulness, or reliability.SOLUTION: A display apparatus includes a first electrode, a second electrode, a first unit, a second unit, and a first intermediate layer. The first unit is sandwiched between the second electrode and the first electrode and contains a first luminescent material EM1. The second unit is sandwiched between the second electrode and the first unit and contains a second luminescent material EM2. The first intermediate layer is sandwiched between the second unit and the first unit and includes a first layer and a second layer. The first layer is sandwiched between the second unit and the second layer and contains an organic compound or a transition metal oxide, the organic compound containing a halogen group or a cyano group. The second layer contains a first organic compound AM2 having electron acceptability, a second organic compound DM having electron donatability, and a third organic compound BM having basicity.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a light-emitting device, a display device, an electronic device, a light-emitting device, a lighting device, or a semiconductor device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification or the like relates to an object, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, as the technical field of one aspect of the present invention disclosed in this specification, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, their driving methods, or their manufacturing methods can be cited as an example.

Background Art

[0003] When used in the electron injection layer of an organic EL element, as an organic thin film capable of obtaining excellent electron injection properties and electron transport properties, for example, a single film containing a hexahydropyrimidopyrimidine compound and a second material for transporting electrons, or a laminated film of a film containing a hexahydropyrimidopyrimidine compound and a film containing a second material is known (Patent Document 1).

Prior Art Document

Patent Document

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] One aspect of the present invention aims to provide a novel light-emitting device with excellent convenience, utility, or reliability. Or, one aspect of the present invention aims to provide a novel display device with excellent convenience, utility, or reliability. Or, one aspect of the present invention aims to provide a novel electronic device with excellent convenience, utility, or reliability. Or, one aspect of the present invention aims to provide a novel light-emitting device with excellent convenience, utility, or reliability. Or, one aspect of the present invention aims to provide a novel lighting device with excellent convenience, utility, or reliability. Or, one aspect of the present invention aims to provide a novel light-emitting device, a novel display device, a novel electronic device, a novel light-emitting device, a novel lighting device, or a novel semiconductor device.

[0006] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not necessarily need to solve all of these problems. Note that other problems will become apparent from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0007] (1) One aspect of the present invention is a light-emitting device having a first electrode, a second electrode, a first unit, a second unit, and a first intermediate layer.

[0008] The first unit is sandwiched between the second electrode and the first electrode, and the first unit contains a first light-emitting material EM1. Also, the second unit is sandwiched between the second electrode and the first unit, and the second unit contains a second light-emitting material EM2.

[0009] The first intermediate layer is sandwiched between the second unit and the first unit. The first intermediate layer includes a first layer and a second layer, and the first layer is sandwiched between the second unit and the second layer.

[0010] The first layer contains an organic compound containing a halogen group or a cyano group or a transition metal oxide.

[0011] The second layer contains the first organic compound AM2, the second organic compound DM, and the third organic compound BM.

[0012] The first organic compound AM2 has its lowest unoccupied orbital level in the range of -3.5 eV to -2.0 eV. The second organic compound DM has its highest occupied orbital level in the range of -5.0 eV to -4.0 eV. The third organic compound BM has an acid dissociation constant pKa between 1 and 30.

[0013] (2) Another aspect of the present invention is a light-emitting device having a first electrode, a second electrode, a first unit, a second unit, and a first intermediate layer.

[0014] The first unit is sandwiched between the second electrode and the first electrode, and the first unit comprises a first luminescent material EM1. The second unit is sandwiched between the second electrode and the first unit, and the second unit comprises a second luminescent material EM2.

[0015] The first intermediate layer is sandwiched between the second unit and the first unit. The first intermediate layer comprises a first layer and a second layer, with the first layer sandwiched between the second unit and the second layer.

[0016] The first layer contains an organic compound or transition metal oxide containing a halogen group or a cyano group.

[0017] The second layer contains the first organic compound AM2, the second organic compound DM, and the third organic compound BM.

[0018] The first organic compound AM2 has its lowest unoccupied orbital level in the range of -3.5 eV to -2.0 eV. The second organic compound DM has its highest occupied orbital level in the range of -5.0 eV to -4.0 eV. The third organic compound BM has a structure represented by the following general formula (G0).

[0019] [ka]

[0020] However, in the above general formula (G0), Ar represents a heteroaryl group containing substituted or unsubstituted nitrogen, and R 1 and R 2 Each of these independently represents a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 12 carbon atoms, or a substituted or unsubstituted aliphatic amine having 1 to 12 carbon atoms, R 1 and R 2 These elements may bond to each other, forming a heterocycle.

[0021] (3) Another aspect of the present invention is the above-described light-emitting device wherein the third organic compound BM has a structure represented by the following general formula (G0).

[0022] [ka]

[0023] However, in the above general formula (G0), Ar comprises either a phenanthroline skeleton or a pyridine skeleton.

[0024] (4) Another aspect of the present invention is the above-described light-emitting device wherein the third organic compound BM has a structure represented by the following general formula (G0).

[0025] [ka]

[0026] However, in the above general formula (G0), R 1 and R 2 These elements bond to each other, forming a pyrrolidine skeleton, a piperidine skeleton, or a hexahydropyrimidopyrimidine group.

[0027] (5) Another aspect of the present invention is the above-mentioned light-emitting device wherein the second organic compound DM comprises a dihydroimidazole group or a tetrahydroimidazole group.

[0028] As a result, the first intermediate layer can supply holes to the second unit and electrons to the first unit. Furthermore, the first intermediate layer can be constructed without using highly reactive materials such as alkali metals or alkaline earth metals. In addition, resistance to impurities such as air or water can be increased. Furthermore, the current efficiency of light emission can be increased. As a result, a novel light-emitting device with excellent convenience, usefulness, and reliability can be provided.

[0029] (6) Another aspect of the present invention is the above-mentioned light-emitting device, wherein the second layer comprises a third layer and a fourth layer, and the fourth layer is sandwiched between the first layer and the third layer.

[0030] Furthermore, the third layer contains the first organic compound AM2 and the second organic compound DM, and the fourth layer contains the third organic compound BM.

[0031] (7) Another aspect of the present invention is the above-mentioned light-emitting device, wherein the second layer comprises a third layer and a fourth layer, and the fourth layer is sandwiched between the first layer and the third layer.

[0032] Furthermore, the third layer contains the third organic compound BM, and the fourth layer contains the first organic compound AM2 and the second organic compound DM.

[0033] (8) Another aspect of the present invention is the above-mentioned light-emitting device, wherein the first layer comprises a fifth layer, and the fifth layer is sandwiched between the first layer and the second layer.

[0034] The fifth layer contains an electron-transporting material.

[0035] (9) Another aspect of the present invention is a display device having a first light-emitting device and a second light-emitting device.

[0036] The first light-emitting device has the above configuration, and the first layer comprises an organic compound containing a halogen group or a cyano group, or a transition metal oxide.

[0037] The second light-emitting device is adjacent to the first light-emitting device and comprises a third electrode, a fourth electrode, and a second intermediate layer. The third electrode has a gap between it and the first electrode.

[0038] The second intermediate layer is sandwiched between the fourth electrode and the third electrode. The second intermediate layer comprises a sixth layer and a seventh layer, the sixth layer being sandwiched between the fourth electrode and the seventh layer.

[0039] The sixth layer contains an organic compound or transition metal oxide containing a halogen group or a cyano group. The sixth layer also has a first region between it and the first layer, which is thinner than the first layer, and this first region overlaps with the gap.

[0040] (10) Another aspect of the present invention is the above-mentioned display device, wherein the second layer comprises the first organic compound AM2, the second organic compound DM, and the third organic compound BM, and the seventh layer comprises the first organic compound AM2, the second organic compound DM, and the third organic compound BM.

[0041] Furthermore, the seventh layer has a second region between it and the second layer, which is thinner than the second layer, and this second region overlaps with the gap.

[0042] This allows, for example, the current flowing through the first region to be suppressed. It also allows the current flowing between the first and second intermediate layers to be suppressed. Furthermore, it suppresses the phenomenon where the adjacent second light-emitting device unintentionally emits light in conjunction with the operation of the first light-emitting device. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0043] (11) Another aspect of the present invention is a display device having the above-mentioned light-emitting device and a transistor or substrate.

[0044] (12) Another aspect of the present invention is an electronic device having the above-mentioned display device, a sensor, an operation button, a speaker or a microphone.

[0045] (13) Another aspect of the present invention is a light-emitting device having the above-mentioned light-emitting device and a transistor or substrate.

[0046] (14) Another aspect of the present invention is a lighting device having the above-mentioned light-emitting device and a housing.

[0047] In the drawings attached to this specification, the components are classified by function and shown as independent blocks in block diagrams. However, in reality, it is difficult to completely separate the components by function, and one component may be involved in multiple functions.

[0048] In this specification, the term "light-emitting device" includes image display devices that use light-emitting devices. Furthermore, modules to which connectors, such as anisotropic conductive films or TCPs (Tape Carrier Packages), are attached to light-emitting devices, modules to which printed circuit boards are provided at the end of TCPs, or modules to which ICs (integrated circuits) are directly mounted using the COG (Chip On Glass) method may also be included as light-emitting devices. Additionally, lighting fixtures and the like may have light-emitting devices.

[0049] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices. [Effects of the Invention]

[0050] According to one aspect of the present invention, a novel light-emitting device with superior convenience, usefulness, or reliability can be provided. Furthermore, one aspect of the present invention can provide a novel display device with superior convenience, usefulness, or reliability. Furthermore, one aspect of the present invention can provide a novel electronic device with superior convenience, usefulness, or reliability. Furthermore, one aspect of the present invention can provide a novel light-emitting device with superior convenience, usefulness, or reliability. Furthermore, one aspect of the present invention can provide a novel lighting device with superior convenience, usefulness, or reliability. Furthermore, a novel light-emitting device can be provided. Furthermore, a novel display device can be provided. Furthermore, a novel electronic device can be provided. Furthermore, a novel light-emitting device can be provided. Furthermore, a novel lighting device can be provided.

[0051] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0052] [Figure 1] Figures 1(A) and 1(B) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 2] Figures 2(A) and 2(B) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 3] Figure 3 is a diagram illustrating the configuration of a display device according to an embodiment. [Figure 4] Figure 4 is a diagram illustrating the configuration of a display device according to an embodiment. [Figure 5] Figures 5(A) to 5(C) illustrate the configuration of an apparatus according to one embodiment of the present invention. [Figure 6] Figure 6 is a circuit diagram illustrating the configuration of an apparatus according to one embodiment of the present invention. [Figure 7]Figures 7(A) to 7(C) illustrate the configuration of an apparatus according to one embodiment of the present invention. [Figure 8] Figures 8(A) and 8(B) illustrate an active matrix type light-emitting device according to an embodiment. [Figure 9] Figures 9(A) and (B) illustrate an active matrix type light-emitting device according to an embodiment. [Figure 10] Figure 10 is a diagram illustrating an active matrix type light-emitting device according to an embodiment. [Figure 11] Figures 11(A) and (B) illustrate a passive matrix type light-emitting device according to an embodiment. [Figure 12] Figures 12(A) and (B) illustrate a lighting device according to an embodiment. [Figure 13] Figures 13(A) to (D) illustrate the electronic equipment according to the embodiment. [Figure 14] Figures 14(A) to (C) illustrate the electronic equipment according to the embodiment. [Figure 15] Figure 15 is a diagram illustrating a lighting device according to an embodiment. [Figure 16] Figure 16 is a diagram illustrating a lighting device according to an embodiment. [Figure 17] Figure 17 is a diagram illustrating an in-vehicle display device and lighting device according to an embodiment. [Figure 18] Figures 18(A) to (C) illustrate the electronic equipment according to the embodiment. [Figure 19] Figures 19(A) and (B) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 20] Figure 20 illustrates the current density-luminance characteristics of the light-emitting device according to the embodiment. [Figure 21] Figure 21 illustrates the brightness-current efficiency characteristics of the light-emitting device according to the embodiment. [Figure 22] Figure 22 illustrates the voltage-luminance characteristics of the light-emitting device according to the embodiment. [Figure 23] Figure 23 illustrates the voltage-current characteristics of the light-emitting device according to the embodiment. [Figure 24] Figure 24 illustrates the emission spectrum of the light-emitting device according to the embodiment. [Figure 25] Figure 25 illustrates the change in normalized brightness over time of the light-emitting device according to the embodiment. [Figure 26] Figure 26 illustrates the current density-luminance characteristics of the light-emitting device according to the embodiment. [Figure 27] Figure 27 illustrates the brightness-current efficiency characteristics of the light-emitting device according to the embodiment. [Figure 28] Figure 28 illustrates the voltage-luminance characteristics of the light-emitting device according to the embodiment. [Figure 29] Figure 29 illustrates the voltage-current characteristics of the light-emitting device according to the embodiment. [Figure 30] Figure 30 is a diagram illustrating the emission spectrum of the light-emitting device according to the embodiment. [Modes for carrying out the invention]

[0053] A light-emitting device according to one aspect of the present invention comprises a first electrode, a second electrode, a first unit, a second unit, and a first intermediate layer, wherein the first unit is sandwiched between the second electrode and the first electrode, and the first unit comprises a first light-emitting material EM1. The second unit is sandwiched between the second electrode and the first unit, and the second unit comprises a second light-emitting material EM2. The first intermediate layer is sandwiched between the second unit and the first unit. The first intermediate layer comprises a first layer and a second layer, wherein the first layer is sandwiched between the second unit and the second layer, and the first layer comprises an organic compound or transition metal oxide containing a halogen group or a cyano group, and the second layer comprises a first organic compound AM2, a second organic compound DM, and a third organic compound BM. The first organic compound AM2 has its lowest unoccupied orbital level in the range of -3.5 eV to -2.0 eV, the second organic compound DM has its highest occupied orbital level in the range of -5.0 eV to -4.0 eV, and the third organic compound BM has an acid dissociation constant pKa of 1 to 30.

[0054] As a result, the first intermediate layer can supply holes to the second unit and electrons to the first unit. Furthermore, the first intermediate layer can be constructed without using highly reactive materials such as alkali metals or alkaline earth metals. In addition, resistance to impurities such as air or water can be increased. Furthermore, the current efficiency of light emission can be increased. As a result, a novel light-emitting device with excellent convenience, usefulness, and reliability can be provided.

[0055] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated descriptions are omitted.

[0056] (Embodiment 1) In this embodiment, the configuration of a light-emitting device 550X according to one aspect of the present invention will be described with reference to Figure 1.

[0057] Figure 1(A) is a cross-sectional view illustrating the configuration of a light-emitting device 550X according to one embodiment of the present invention. Figure 1(B) is a diagram illustrating the materials used in the light-emitting device 550X according to one embodiment of the present invention.

[0058] <Example configuration of the 550X light-emitting device> The light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, and an intermediate layer 106X (see Figure 1(A)).

[0059] Unit 103X is sandwiched between electrodes 552X and 551X, and unit 103X contains the luminescent material EM1.

[0060] Unit 103X2 is sandwiched between electrode 552X and unit 103X, and unit 103X2 contains the luminescent material EM2.

[0061] Furthermore, the intermediate layer 106X is sandwiched between units 103X2 and 103X.

[0062] 《Example of a 106X intermediate layer configuration》 The intermediate layer 106X has the function of supplying electrons to the anode side and holes to the cathode side when a voltage is applied. The intermediate layer 106X can also be called a charge generation layer.

[0063] The intermediate layer 106X comprises layer 106X1 and layer 106X2, with layer 106X1 sandwiched between unit 103X2 and layer 106X2.

[0064] 《Example of a 106x1 layer configuration 1》 For example, when the square root of the electric field strength [V / cm] is 600, the hole mobility is 1 × 10⁻⁶. -3 cm 2Materials with a voltage of / Vs or less can be used for layer 106X1. Also, 1×10 4 [Ω·cm] or more and 1×10 7 [Ω·cm] or less can be used for layer 106X1. Preferably, layer 106X1 has a resistivity of 5×10 4 [Ω·cm] or more and 1×10 7 [Ω·cm] or less, and more preferably, it has a resistivity of 1×10 5 [Ω·cm] or more and 1×10 7 [Ω·cm] or less.

[0065] Specifically, an electron-accepting substance AM1 can be used for layer 106X1.

[0066] [Electron-accepting substance AM1] Organic and inorganic compounds can be used for the electron-accepting substance AM1. The electron-accepting substance AM1 can extract electrons from an adjacent hole transport layer or a hole-transporting material by applying an electric field. [[ID=2\4]]

[0067] For example, a compound having an electron-withdrawing group (halogen group or cyano group) can be used for the electron-accepting substance AM1. Note that the electron-accepting organic compound is easy to vaporize and form a film. Thereby, the productivity of the light-emitting device 550X can be improved.

[0068] -Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene) malononitrile, etc. can be used.

[0069] In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are thermally stable and therefore preferred.

[0070] Furthermore, radialene derivatives having electron-withdrawing groups (especially halogen groups such as fluoro groups or cyano groups) are preferred because they have very high electron-accepting properties.[3]

[0071] Specifically, α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc., can be used.

[0072] Furthermore, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used as the electron-accepting substance AM1.

[0073] Furthermore, phthalocyanine-based complex compounds such as phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine (CuPc), and compounds having an aromatic amine skeleton such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) and N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as DNTPD) can be used.

[0074] Furthermore, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can be used.

[0075] [Example of composite material composition 1] Furthermore, for example, a composite material containing an electron-accepting substance AM1 and a hole-transporting material can be used in layer 106X1.

[0076] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as hole transport materials in composite materials. Furthermore, if the hole mobility is 1 × 10⁻⁶ -6 cm 2 Materials with a Vs of 1 / V or higher can be suitably used as hole-transporting materials in composite materials. For example, a hole-transporting material that can be used in layer 112X described in Embodiment 2 can be used in composite materials.

[0077] Furthermore, materials with relatively deep HOMO levels can be suitably used as hole-transporting materials in composite materials. Specifically, it is preferable that the HOMO level is between -5.7 eV and -5.4 eV. This facilitates the injection of holes into unit 103X2. It also improves the reliability of the light-emitting device 550X.

[0078] Examples of compounds having an aromatic amine skeleton include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviated as DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviated as DPA3B).

[0079] Examples of carbazole derivatives include 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarb You can use zole (abbreviated as PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviated as TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc.

[0080] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), and 2-tert-butyl-9,10 -Bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, pentacene, coronene, etc. can be used.

[0081] Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviated as DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviated as DPVPA), and the like.

[0082] Examples of polymer compounds that can be used include poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD), and the like.

[0083] Furthermore, for example, substances comprising any of the carbazole skeleton, dibenzofuran skeleton, dibenzothiophene skeleton, and anthracene skeleton can be suitably used as hole-transporting materials in composite materials. In addition, substances comprising aromatic amines having substituents including a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group can be used as hole-transporting materials in composite materials. Moreover, using a substance having an N,N-bis(4-biphenyl)amino group can improve the reliability of the light-emitting device 550X.

[0084] Examples of these materials include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)benzo[b]naphtho[1,2 -d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl -4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-0 3) 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl ]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl ]Tris(1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[ 4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1 -Naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis( 9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-1-amine, etc. can be used.

[0085] [Example of composite material composition 2] For example, a composite material containing an electron-accepting substance AM1, a hole-transporting material, and an alkali metal fluoride or alkaline earth metal fluoride can be used. In particular, a composite material in which fluorine atoms make up 20% or more of the atomic ratio can be suitably used. This can lower the refractive index of layer 106X1. Alternatively, a layer with a low refractive index can be formed inside the light-emitting device 550X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0086] 《Example 1 of a 106x2 layer configuration》 Layer 106X2 contains an electron-accepting organic compound AM2, an electron-donating organic compound DM, and a basic organic compound BM.

[0087] [Electron-accepting organic compound AM2] For example, an organic compound AM2 having a lowest unoccupied orbital (LUMO) level in the range of -3.5 eV to -2.0 eV, preferably -2.5 eV or less, can be used in layer 106X2.

[0088] Specifically, these include 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (abbreviation: BCP), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), and 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenantrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn). 2,2'-(pyridine-2,6-diyl)bis(4,6-diphenylpyrimidine) (abbreviation: 2,6(P2Pm)2Py), 2,2'-(pyridine-2,6-diyl)bis[4-(4-(2-naphthyl)phenyl)-6-phenylpyrimidine] (abbreviation: 2,6(NP-PPm)2Py), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,4-bis[4-(1-naphthyl)phenyl]-6-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), etc., can be used in layer 106X2.

[0089] [ka]

[0090] [Electron-donating organic compounds DM] For example, an organic compound DM having a highest occupied orbital (HOMO) level in the range of -5.0 eV to -4.0 eV can be used in layer 106X2. Specifically, an organic compound having a dihydroimidazole group or a tetrahydroimidazole group can be used as the organic compound DM. Because the highest occupied orbital (HOMO) level is in the range of -5.0 eV to -4.0 eV, oxidation can be suppressed. Furthermore, electron-donating properties can be exhibited. In addition, the organic compound DM can exhibit electron-donating properties while suppressing susceptibility to oxidation. Furthermore, compared to alkali metals such as lithium, for example, quality fluctuations originating from the device manufacturing process can be suppressed. Furthermore, handling of work-in-progress becomes easier in the device manufacturing process. Furthermore, processes carried out in the atmosphere can be adopted in the device manufacturing process.

[0091] Specifically, 4-(1,3-dimethyl-2,3-dihydro-1H-benzimidazole-2-yl)-N,N-diphenylaniline (abbreviated as TPABzi), 4-(1,3-dimethyl-2H-benzimidazole-2-yl)-N,N-dimethylaniline (abbreviated as N-DMBI), 4,4',5,5'-tetracyclohexyl-1,1',2,2',3,3'-hexamethyl-2,2',3,3'-tetrahydro-2,2'-biimidazole (abbreviated as Bisch2Dhim), etc., can be used in layer 106X2.

[0092] [ka]

[0093] [Basic organic compounds BM] For example, a basic organic compound BM can be used in layer 106X2. Specifically, an organic compound having an acid dissociation constant pKa of 1 to 30, preferably 5 to 30, can be used as organic compound BM. This can compensate for the electron-donating properties of organic compound DM. Furthermore, the interaction between the basic organic compound BM and organic compound DM improves the electron-donating properties of organic compound DM to organic compound AM2. In addition, charge separation is more likely to occur in layer 106X2.

[0094] Furthermore, this allows the intermediate layer 106X to function as a charge generation layer without using a material containing an alkali metal or alkaline earth metal that is easily oxidized. Therefore, one aspect of the present invention is a light-emitting device in which the intermediate layer 106X does not contain a material containing an alkali metal or alkaline earth metal. Another aspect is a light-emitting device in which the layer 106X2 does not contain a material containing a metal.

[0095] For example, the basic organic compound BM has a structure represented by the following general formula (G0).

[0096] [ka]

[0097] [Example of Ar] In the above general formula (G0), Ar represents a heteroaryl group containing a substituted or unsubstituted nitrogen.

[0098] For example, the substituents shown below (Ar-1 to Ar-7) can be used for Ar. Specifically, substituents comprising a pyridine skeleton (Ar-1), pyrimidine skeleton (Ar-2), pyrazine skeleton (Ar-3), triazine skeleton (Ar-4), bipyridine skeleton (Ar-5), terpyridine skeleton (Ar-6), or phenanthroline skeleton (Ar-7) can be used for Ar. Note that the asterisks in the structural formulas represent bonds.

[0099] [ka]

[0100] Furthermore, examples of substituents that can be used on the nitrogen-containing heteroaryl group include alkyl groups having 1 to 4 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted aryl groups having 6 to 30 carbon atoms, or substituted or unsubstituted heteroaryl groups having 2 to 30 carbon atoms.

[0101] Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and n-hexyl groups. Examples of the cycloalkyl group include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and adamantyl groups.

[0102] Furthermore, the aryl group in the above-mentioned nitrogen-containing heteroaryl group can be a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, such as a phenyl group, naphthyl group, biphenyl group, fluorenyl group, spirofluorenyl group, etc.

[0103] Furthermore, the heteroaryl group contained in the above-mentioned nitrogen-containing heteroaryl group can be a substituted or unsubstituted heteroaromatic ring having 1 to 30 carbon atoms. Examples include pyridine rings, diazine rings (pyrimidine rings, pyrazine rings, pyridazine rings), triazine rings, quinoline rings, quinoxaline rings, quinazoline rings, benzoquinazoline rings, phenanthroline rings, azafluorantene rings, imidazole rings, oxazole rings, oxadiazole rings, and triazole rings.

[0104] [R 1 and R 2 [Example] Furthermore, in the above general formula (G0), R 1 and R 2Each of these independently represents a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 12 carbon atoms, or a substituted or unsubstituted aliphatic amine having 1 to 12 carbon atoms.

[0105] For example, the skeleton (R-1) has a methyl group R 1 and R 2 This is the case when used, and the skeleton (R-2) has an ethyl group R 1 and R 2 This is the case when used in the above, and the skeleton (R-3) uses an ethyl group and a propyl group. Also, the skeleton (R-4) uses an aminomethyl group and a propyl group, and the skeleton (R-5) uses an aminoethyl group and an ethyl group.

[0106] Also, R 1 and R 2 These components may bond to each other to form heterocycles. Specifically, they may form pyrrolidine skeletons (R-2), piperidine skeletons (R-3), hydropyrimidine skeletons (R-4), piperazine skeletons (R-5), and so on.

[0107] [ka]

[0108] Examples of substituents that can be used on the heterocycle include alkyl groups having 1 to 4 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, aliphatic amines having 1 to 4 carbon atoms, or amines having 1 to 4 carbon atoms with a carbon-nitrogen double bond.

[0109] Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and n-hexyl groups. Examples of the cycloalkyl group include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and adamantyl groups.

[0110] Furthermore, the heterocycle may have two or more substituents, and the two substituents on the heterocycle may bond to each other to form a ring.

[0111] Specifically, the two substituents on the heterocycle may bond to each other to form a spiro skeleton (substituent (R-6)). Alternatively, the two substituents on the heterocycle may share two elements of the heterocycle to form multiple rings. Specifically, they may form an octahydroquinoline group (R-7), a hydrobenzo[de]quinoline group (R-8), or a 2,3,4,6,7,8-hexahydropyrimido[1,2-a]pyrimidine group (R-9).

[0112] [ka]

[0113] As a result, the intermediate layer 106X can supply holes to unit 103X2 and electrons to unit 103X. Furthermore, the intermediate layer 106X can be constructed without using highly reactive materials such as alkali metals or alkaline earth metals. In addition, resistance to impurities such as air or water can be increased. Furthermore, the current efficiency of light emission can be increased. As a result, a novel light-emitting device with superior convenience, usefulness, and reliability can be provided.

[0114] Specifically, compounds such as 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviated as Pyrrd-Phen) and 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviated as hpp2Py) can be used in layer 106X2. In addition, organic compounds (BM-1 or BM-2) can be used in layer 106X2.

[0115] [ka]

[0116] For example, 1,2,3,4,6,7,8,9-octahydropyrimido[1,2-a]pyrimidine-5-ium (abbreviated as TBD) and 1-methyl-3,4,6,7,8,9-hexahydro-2H-pyrimido[1,2-a]pyrimidine-1-ium (abbreviated as MTBD) are both organic compounds containing a 2,3,4,6,7,8-hexahydropyrimido[1,2-a]pyrimidine group, and their acid dissociation constants (pKa) are both 15. Furthermore, since hpp2Py also contains a 2,3,4,6,7,8-hexahydropyrimido[1,2-a]pyrimidine group, its acid dissociation constant (pKa) can be estimated to be around 15.

[0117] [ka]

[0118] 《Example 2 of a 106x2 layer configuration》 Layer 106X2 comprises layers 106X21 and 106X22, with layer 106X22 sandwiched between layers 106X1 and 106X21 (see Figure 1(A)).

[0119] Layer 106X21 contains an electron-accepting organic compound AM2 and an electron-donating organic compound DM, and layer 106X22 contains a basic organic compound BM.

[0120] 《Example 3 of a 106x2 layer configuration》 Layer 106X2 comprises layers 106X21 and 106X22, with layer 106X22 sandwiched between layers 106X1 and 106X21 (see Figure 1(A)).

[0121] Layer 106X21 contains a basic organic compound BM, and layer 106X22 contains an electron-accepting organic compound AM2 and an electron-donating organic compound DM.

[0122] 《Example 2 of the configuration of the intermediate layer 106X》 The intermediate layer 106X comprises layer 106X3, which is sandwiched between layers 106X1 and 106X2 (see Figure 1(A)).

[0123] Layer 106X3 contains an electron-transporting material.

[0124] 《Example of a 106x3 layer configuration》 Layer 106X3 can be called an electron relay layer. By using layer 106X3, the layer in contact with the anode side of layer 106X3 can be moved away from the layer in contact with the cathode side of layer 106X3. The interaction between the layer in contact with the anode side of layer 106X3 and the layer in contact with the cathode side of layer 106X3 can be reduced. Electrons can be smoothly supplied to the layer in contact with the anode side of layer 106X3.

[0125] A material having a LUMO level between the LUMO level of the electron-accepting material AM1 contained in the layer in contact with the cathode side of layer 106X3 and the LUMO level of the material contained in the layer in contact with the anode side of layer 106X3 can be suitably used in layer 106X3.

[0126] For example, a material having a LUMO level in the range of -5.0 eV or higher, preferably -5.0 eV to -3.0 eV, can be used for layer 106X3.

[0127] Specifically, phthalocyanine-based materials can be used in layer 106X3. For example, copper phthalocyanine (abbreviated as CuPc) or metal complexes having metal-oxygen bonds and aromatic ligands can be used in layer 106X3.

[0128] [ka]

[0129] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0130] (Embodiment 2) In this embodiment, the configuration of a light-emitting device 550X according to one aspect of the present invention will be described with reference to Figure 1.

[0131] <Configuration example 1 of the 550X light-emitting device> The light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, and an intermediate layer 106X (see Figure 1(A)).

[0132] Unit 103X is sandwiched between electrodes 552X and 551X, and unit 103X contains a light-emitting material EM1. Unit 103X also has the function of emitting light ELX1. Figure 1(A) shows an example in which light ELX1 is emitted from the electrode 552X side, but light ELX1 may also be emitted from the electrode 551X side.

[0133] Unit 103X2 is sandwiched between electrode 552X and unit 103X, and unit 103X2 contains the luminescent material EM2. Unit 103X2 also has the function of emitting light ELX2.

[0134] In other words, the light-emitting device 550X has multiple stacked units between electrodes 551X and 552X. The number of stacked units is not limited to two; three or more units can be stacked. A configuration comprising multiple stacked units sandwiched between electrodes 551X and 552X, and an intermediate layer 106X sandwiched between the multiple units, is sometimes referred to as a stacked light-emitting device or a tandem light-emitting device.

[0135] This allows for high-brightness light emission while maintaining a low current density. Alternatively, reliability can be improved. Alternatively, the drive voltage can be reduced when comparing at the same brightness. Alternatively, power consumption can be suppressed.

[0136] 《Example configuration of Unit 103X》 Unit 103X has a single-layer or multi-layer structure. For example, unit 103X comprises layers 111X, 112X, and 113X (see Figure 1(A)). Layer 111X is sandwiched between layers 112X and 113X.

[0137] For example, a layer selected from functional layers such as an emissive layer, a hole transport layer, an electron transport layer, and a carrier block layer can be used in unit 103X. Furthermore, a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton block layer, and a charge generation layer can also be used in unit 103X.

[0138] 《Example of a 112X layer configuration》 For example, a hole-transporting material can be used for layer 112X. Layer 112X can also be referred to as a hole-transporting layer. It is preferable to use a material for layer 112X that has a larger band gap than the luminescent material contained in layer 111X. This suppresses energy transfer from excitons generated in layer 111X to layer 112X.

[0139] [Materials with hole transport properties] The hole mobility is 1 × 10⁻⁶. -6 cm 2 Materials with a Vs of / Vs or higher can be suitably used as materials with hole transport properties.

[0140] For example, amine compounds or organic compounds having a π-electron-rich heteroaromatic ring skeleton can be used in hole-transporting materials. Specifically, compounds having an aromatic amine skeleton, a carbazole skeleton, a thiophene skeleton, a furan skeleton, etc., can be used. Compounds having an aromatic amine skeleton or a carbazole skeleton are particularly preferred because they offer good reliability, high hole transportability, and contribute to reducing the driving voltage.

[0141] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobio[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA1BP). 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviated as PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobio[9H-fluoren]-2-amine (abbreviated as PCBASF), etc. can be used.

[0142] Examples of compounds having a carbazole skeleton include 1,3-bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), and the like.

[0143] Examples of compounds having a thiophene skeleton include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV), and others.

[0144] Examples of compounds having a furan skeleton include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and others.

[0145] 《Example of Layer 113X Configuration》 For example, electron-transporting materials, materials with an anthracene skeleton, and mixed materials can be used for layer 113X. Layer 113X can also be referred to as an electron transport layer. It is preferable to use a material for layer 113X that has a larger band gap than the luminescent material contained in layer 111X. This makes it possible to suppress energy transfer from excitons generated in layer 111X to layer 113X.

[0146] [Materials with electron transport properties] For example, under the condition that the square root of the electric field strength [V / cm] is 600, the electron mobility is 1 × 10⁻⁶. -7 cm 2 / Vs or more, 5×10 -5 cm 2 Materials with a Vs of 0.5 or less can be suitably used as electron-transporting materials. This makes it possible to suppress electron transport in the electron transport layer, control the amount of electrons injected into the light-emitting layer, or prevent the light-emitting layer from becoming electron-excessive.

[0147] For example, metal complexes or organic compounds having a π-electron-deficient heteroaromatic ring skeleton can be used as electron-transporting materials.

[0148] Examples of metal complexes that can be used include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), bis(8-quinolinolato)zinc(II) (abbreviated as Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviated as ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviated as ZnBTZ), and the like.

[0149] Organic compounds having a π-electron-deficient heteroaromatic ring skeleton include, for example, heterocyclic compounds having a polyazole skeleton, heterocyclic compounds having a diazine skeleton, heterocyclic compounds having a pyridine skeleton, and heterocyclic compounds having a triazine skeleton. In particular, heterocyclic compounds having a diazine skeleton or a pyridine skeleton are preferred due to their good reliability. Furthermore, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties, which can reduce the driving voltage.

[0150] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), and 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated as O XD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviated as CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated as TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II), etc. can be used.

[0151] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), and 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h Quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4,8mDBtP2Bqn), etc. can be used.

[0152] Examples of heterocyclic compounds having a pyridine skeleton include 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and others.

[0153] Examples of heterocyclic compounds having a triazine skeleton include 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn) and 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFT). You can use compounds such as Zn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), etc.

[0154] [Materials containing an anthracene skeleton] Organic compounds having an anthracene skeleton can be used in layer 113X. In particular, organic compounds containing both an anthracene skeleton and a heterocyclic skeleton can be preferably used.

[0155] For example, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used in layer 113X. Alternatively, an organic compound containing both a nitrogen-containing five-membered ring skeleton with two heteroatoms in the ring and an anthracene skeleton can be used in layer 113X. Specifically, pyrazole rings, imidazole rings, oxazole rings, thiazole rings, etc., can be suitably used as the heterocyclic skeleton.

[0156] Furthermore, for example, an organic compound containing both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used in layer 113X. Alternatively, an organic compound containing both a nitrogen-containing six-membered ring skeleton with two heteroatoms in the ring and an anthracene skeleton can be used in layer 113X. Specifically, pyrazine rings, pyrimidine rings, pyridazine rings, etc., can be suitably used as the heterocyclic skeleton.

[0157] [Example of mixed material composition] Furthermore, a material composed of a mixture of multiple substances can be used in layer 113X. Specifically, a mixed material containing an alkali metal, alkali metal compound, or alkali metal complex and an electron-transporting substance can be used in layer 113X. It is more preferable that the HOMO level of the electron-transporting material is -6.0 eV or higher.

[0158] Furthermore, the mixed material can be suitably used in layer 113X in combination with a configuration in which a composite material, as described separately, is used in layer 104X. For example, a composite material of an electron-accepting material and a hole-transporting material can be used in layer 104X. Specifically, a composite material of an electron-accepting material and a material having a relatively deep HOMO level HM1 between -5.7 eV and -5.4 eV can be used in layer 104X (see Figure 1(B)). By using the mixed material in layer 113X in combination with a configuration in which such a composite material is used in layer 104X, the reliability of the light-emitting device can be improved.

[0159] Furthermore, it is preferable to combine the configuration in which the mixed material is used in layer 113X and the composite material is used in layer 104X with a configuration in which a hole-transporting material is used in layer 112X. For example, a material having a HOMO level HM2 in the range of -0.2eV to 0eV relative to the relatively deep HOMO level HM1 can be used in layer 112X (see Figure 1(B)). This can improve the reliability of the light-emitting device. In this specification, the above light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).

[0160] A configuration in which alkali metals, alkali metal compounds, or alkali metal complexes are present in the thickness direction of layer 113X with a concentration difference (including cases where the concentration is zero) is preferred.

[0161] For example, metal complexes containing an 8-hydroxyquinolinate structure can be used. Alternatively, methyl-substituted metal complexes containing an 8-hydroxyquinolinate structure (e.g., 2-methyl-substituted or 5-methyl-substituted) can also be used.

[0162] As metal complexes containing the 8-hydroxyquinolinate structure, 8-hydroxyquinolinate-lithium (abbreviated as Liq), 8-hydroxyquinolinate-sodium (abbreviated as Naq), etc., can be used. In particular, monovalent metal ion complexes are preferred, among lithium complexes, and Liq is more preferred.

[0163] 《Example of Layer 111X Configuration 1》 For example, a luminescent material, or a luminescent material and a host material, can be used for layer 111X. Layer 111X can also be referred to as a light-emitting layer. It is preferable to place layer 111X in the region where holes and electrons recombine. This allows the energy generated by carrier recombination to be efficiently emitted as light.

[0164] Furthermore, it is preferable to position layer 111X away from the metal used for electrodes, etc. This makes it possible to suppress the quenching phenomenon caused by the metal used for electrodes, etc.

[0165] Furthermore, it is preferable to adjust the distance from the reflective electrodes, etc., to the layer 111X and position the layer 111X at an appropriate location according to the emission wavelength. This allows for the amplification of the light amplitudes by utilizing the interference phenomenon between the light reflected by the electrodes, etc., and the light emitted by the layer 111X. In addition, it is possible to strengthen light of a predetermined wavelength and narrow the light spectrum. Furthermore, a vivid emission color can be obtained with high intensity. In other words, by positioning the layer 111X at an appropriate location between the electrodes, etc., a microcavity structure can be constructed.

[0166] For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence (TADF) (also known as TADF materials) can be used as luminescent materials. This allows the energy generated by carrier recombination to be released from the luminescent material as photo-ELX1 (see Figure 1(A)).

[0167] [Fluorescent material] A fluorescent material can be used in layer 111X. For example, the fluorescent materials exemplified below can be used in layer 111X. However, this is not limited to these examples, and various known fluorescent materials can be used in layer 111X.

[0168] Specifically, these include 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), and N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl] Nyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation :2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N '-triphenyl-1,4-phenylenediamine' (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;[6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be used.

[0169] In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds like 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they exhibit high hole-trapping properties and excellent luminescence efficiency or reliability.

[0170] Also, N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysen-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, 9,10-diphenyl-2-[N-phenyl-N-(9-phenylcarbazole-3-yl)-amino]-anthracene (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-to Riphenyl-1,4-phenylenediamine (abbreviated as 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPABPhA), 9,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviated as 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviated as DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviated as DPQd), rubren, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviated as BPT), etc. can be used.

[0171] Also, 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis (4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]k [Noridin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(di You can use methylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), etc.

[0172] [Phosphorescent material] A phosphorescent material can be used in layer 111X. For example, the phosphorescent materials exemplified below can be used in layer 111X. However, it is not limited to these, and various known phosphorescent materials can be used in layer 111X.

[0173] For example, organometallic iridium complexes having a 4H-triazole skeleton, organometallic iridium complexes having a 1H-triazole skeleton, organometallic iridium complexes having an imidazole skeleton, organometallic iridium complexes with a phenylpyridine derivative having an electron-withdrawing group as a ligand, organometallic iridium complexes having a pyrimidine skeleton, organometallic iridium complexes having a pyrazine skeleton, organometallic iridium complexes having a pyridine skeleton, rare earth metal complexes, platinum complexes, etc., can be used in layer 111X.

[0174] [Phosphorescent material (blue)] Examples of organometallic iridium complexes having a 4H-triazole skeleton include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), and others.

[0175] Examples of organometallic iridium complexes having a 1H-triazole skeleton include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), and others.

[0176] Examples of organometallic iridium complexes having an imidazole skeleton include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridine]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), and others.

[0177] Examples of organometallic iridium complexes using phenylpyridine derivatives having electron-withdrawing groups as ligands include bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviated as FIracac), etc., can be used.

[0178] These compounds exhibit blue phosphorescence and have emission wavelength peaks between 440 nm and 520 nm.

[0179] [Phosphorescent material (green)] Examples of organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation) [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), etc. can be used.

[0180] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and others.

[0181] Examples of organometallic iridium complexes having a pyridine skeleton include tris(2-phenylpyridinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinate-N,C) 2’Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinate)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinate)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C) 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzoflof[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN 2 [Ir(5mppy-d3)2(mbfpypy-d3)], [2-d3-methyl-(2-pyridinyl-κN)benzofl[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mbfpypy-d3)]), etc. can be used.

[0182] Examples of rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0183] These compounds primarily exhibit green phosphorescence and have emission wavelength peaks between 500 nm and 600 nm. Furthermore, organometallic iridium complexes with a pyrimidine skeleton are remarkably superior in terms of reliability or luminescence efficiency.

[0184] [Phosphorescent material (red)] Examples of organometallic iridium complexes having a pyrimidine skeleton include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipvaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalene-1-yl)pyrimidinato](dipvaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), etc.

[0185] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(2,3,5-triphenylpyradinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyradinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), etc.

[0186] Examples of organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), etc., can be used.

[0187] Examples of rare earth metal complexes that can be used include tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]), etc.

[0188] Examples of platinum complexes that can be used include 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP).

[0189] These compounds exhibit red phosphorescence and have an emission peak between 600 nm and 700 nm. Furthermore, organometallic iridium complexes with a pyrazine skeleton produce red emission with a chromaticity suitable for use in display devices.

[0190] [Substances exhibiting thermally activated delayed fluorescence (TADF)] TADF material can be used in layer 111X. When TADF material is used as a light-emitting material, it is preferable that the S1 level of the host material is higher than the S1 level of the TADF material. Also, it is preferable that the T1 level of the host material is higher than the T1 level of the TADF material.

[0191] For example, the TADF materials exemplified below can be used as luminescent materials. However, the materials are not limited to these, and various known TADF materials can be used.

[0192] Furthermore, TADF materials have a small difference between the S1 and T1 energy levels, allowing for reverse intersystem crossing (upconversion) from a triplet excited state to a singlet excited state with only a small amount of thermal energy. This enables efficient generation of singlet excited states from triplet excited states. In addition, the triplet excitation energy can be converted into luminescence.

[0193] Furthermore, an excited complex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 and T1 levels and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0194] Furthermore, the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 level. For TADF materials, when a tangent is drawn at the short-wavelength tail of the fluorescence spectrum and the energy at the wavelength of the extrapolation is taken as the S1 level, and when a tangent is drawn at the short-wavelength tail of the phosphorescence spectrum and the energy at the wavelength of the extrapolation is taken as the T1 level, it is preferable that the difference between the S1 level and the T1 level is 0.3 eV or less, and more preferably 0.2 eV or less.

[0195] For example, fullerenes and their derivatives, acridines and their derivatives, eosin derivatives, etc., can be used as TADF materials. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd), etc., can be used as TADF materials.

[0196] Specifically, the following can be used: protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc., whose structural formulas are shown below.

[0197] [ka]

[0198] Furthermore, for example, heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring can be used as TADF materials.

[0199] Specifically, the structural formulas are as follows: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazol (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4 ,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviated as DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviated as ACRSA), etc. can be used.

[0200] [ka]

[0201] The heterocyclic compound is preferred because it has both a π-electron-excess heteroaromatic ring and a π-electron-deficient heteroaromatic ring, resulting in high electron transport and hole transport properties. In particular, among the skeletons having a π-electron-deficient heteroaromatic ring, the pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, the benzoflopyrimidine skeleton, benzothienopyrimidine skeleton, benzoflopyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high electron-accepting properties and are reliable.

[0202] Furthermore, among skeletons having a π-electron-excess heteroaromatic ring, the acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are stable and reliable, and therefore it is preferable to have at least one of these skeletons. Dibenzofuran is preferred as the furan skeleton, and dibenzothiophene is preferred as the thiophene skeleton. Indole, carbazole, indrocarbazole, bicarbazole, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole are particularly preferred as the pyrrole skeleton.

[0203] Furthermore, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because both the electron-donating and electron-accepting properties of the π-electron-rich heteroaromatic ring are strengthened, resulting in a smaller energy difference between the S1 and T1 levels, thus efficiently obtaining thermally activated delayed fluorescence. Alternatively, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used instead of the π-electron-deficient heteroaromatic ring. Additionally, aromatic amine skeletons, phenazine skeletons, and the like can be used as the π-electron-rich skeleton.

[0204] Furthermore, as π-electron-deficient skeletons, xanthene skeletons, thioxanthene dioxide skeletons, oxadiazole skeletons, triazole skeletons, imidazole skeletons, anthraquinone skeletons, boron-containing skeletons such as phenylborane or volanthrene, aromatic rings or heteroaromatic rings having a nitrile group or cyano group such as benzonitrile or cyanobenzene, carbonyl skeletons such as benzophenone, phosphine oxide skeletons, sulfone skeletons, and the like can be used.

[0205] Thus, a π-electron-deficient skeleton and a π-electron-excess skeleton can be used instead of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-excess heteroaromatic ring.

[0206] 《Example of Layer 111X Configuration 2》 Materials with carrier transport properties can be used as the host material. For example, materials with hole transport properties, materials with electron transport properties, materials exhibiting thermally activated delayed fluorescence (TADF), materials with an anthracene skeleton, and mixed materials can be used as the host material. It is preferable to use a material with a larger band gap than the luminescent material contained in layer 111X as the host material. This makes it possible to suppress energy transfer from excitons generated in layer 111X to the host material.

[0207] [Materials with hole transport properties] The hole mobility is 1 × 10⁻⁶. -6 cm 2 Materials with a Vs of 1 / Vs or higher can be suitably used as hole-transporting materials. For example, a hole-transporting material that can be used in layer 112X can be used as a host material.

[0208] [Materials with electron transport properties] Metal complexes or organic compounds having a π-electron-deficient heteroaromatic ring skeleton can be used in electron-transporting materials. For example, an electron-transporting material that can be used in layer 113X can be used as a host material.

[0209] [Materials containing an anthracene skeleton] Organic compounds having an anthracene skeleton can be used as host materials. In particular, organic compounds having an anthracene skeleton are suitable when fluorescent materials are used as the light-emitting material. This makes it possible to realize light-emitting devices with good luminescence efficiency and durability.

[0210] Among organic compounds having an anthracene skeleton, organic compounds having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, are preferred because they are chemically stable. Furthermore, when the host material has a carbazole skeleton, it is preferred because the hole injection and transport properties are enhanced. In particular, when the host material contains a dibenzocarbazole skeleton, the HOMO level becomes about 0.1 eV shallower than that of carbazole, making it easier for holes to enter, and it is also preferred because it has excellent hole transport properties and high heat resistance. From the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of a carbazole skeleton.

[0211] Therefore, substances having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, substances having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, and substances having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton are preferred as host materials.

[0212] For example, 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-phenyl-3-[4-(10-phenyl [Lu-9-anthryl)phenyl]-9H-carbazole (abbreviated as PCzPA), 9-[4-(10-phenyl-9-antracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), etc. can be used.

[0213] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good characteristics.

[0214] [Substances exhibiting thermally activated delayed fluorescence (TADF)] TADF materials can be used as host materials. When TADF materials are used as host materials, the triplet excitation energy generated by the TADF material can be converted into singlet excitation energy through reverse intersystem crossing. Furthermore, the excitation energy can be transferred to the light-emitting material. In other words, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor. This can increase the luminescence efficiency of the light-emitting device.

[0215] This is particularly effective when the light-emitting material is a fluorescent material. Furthermore, in order to obtain high luminescence efficiency, it is preferable that the S1 level of the TADF material is higher than that of the fluorescent material. Also, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material.

[0216] Furthermore, it is preferable to use a TADF material that exhibits emission that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material. This is preferable because it allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient emission.

[0217] In addition, in order to efficiently generate singlet excited energy from triplet excited energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. Further, it is preferable that the triplet excited energy generated in the TADF material does not move to the triplet excited energy of the fluorescent substance. For this purpose, it is preferable that the fluorescent substance has a protecting group around the lumophore (skeleton responsible for luminescence) of the fluorescent substance. As the protecting group, a substituent having no π bond is preferable, a saturated hydrocarbon is preferable, and specifically, an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, and a trialkylsilyl group having 3 to 10 carbon atoms can be mentioned, and it is more preferable that there are a plurality of protecting groups. Since a substituent having no π bond has a poor function of transporting carriers, it is possible to increase the distance between the TADF material and the lumophore of the fluorescent substance without hardly affecting carrier transport or carrier recombination.

[0218] Here, the lumophore refers to an atomic group (skeleton) that causes luminescence in a fluorescent substance. The lumophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.

[0219] Examples of the condensed aromatic ring or the condensed heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, etc. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferable because of their high fluorescence quantum yields.

[0220] For example, a TADF material that can be used for a luminescent material can be used as a host material.

[0221] [Configuration Example 1 of Hybrid Material] In addition, a material obtained by mixing multiple types of substances can be used as the host material. For example, a material having electron transporting properties and a material having hole transporting properties can be used as the mixed material. The value of the weight ratio of the hole transporting material and the electron transporting material contained in the mixed material may be (hole transporting material / electron transporting material) = (1 / 19) or more and (19 / 1) or less. Thereby, the carrier transporting property of layer 111X can be easily adjusted. Also, the control of the recombination region can be easily performed.

[0222] [Example of the composition of the mixed material 2] A material mixed with a phosphorescent substance can be used as the host material. The phosphorescent substance can be used as an energy donor that supplies excitation energy to the fluorescent substance when the fluorescent substance is used as the luminescent substance.

[0223] [Example of the composition of the mixed material 3] A mixed material containing a material that forms an exciplex can be used as the host material. For example, a material whose emission spectrum of the formed exciplex overlaps with the wavelength of the absorption band on the lowest energy side of the luminescent substance can be used as the host material. Thereby, energy transfer becomes smooth and the emission efficiency can be improved. Or, the driving voltage can be suppressed. By adopting such a configuration, efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the exciplex to the luminescent substance (phosphorescent material), can be obtained.

[0224] A phosphorescent substance can be used for at least one of the materials that form the exciplex. Thereby, reverse intersystem crossing can be utilized. Or, triplet excitation energy can be efficiently converted into singlet excitation energy.

[0225] For a combination of materials to form an excited complex, it is preferable that the HOMO level of the hole-transporting material is higher than or equal to the HOMO level of the electron-transporting material. Alternatively, it is preferable that the LUMO level of the hole-transporting material is higher than or equal to the LUMO level of the electron-transporting material. This allows for efficient formation of the excited complex. The LUMO and HOMO levels of the materials can be derived from their electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction potential and oxidation potential can be measured using cyclic voltammetry (CV) measurement.

[0226] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be replaced with transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a mixed film made by mixing these materials, and observing the differences in the transient response.

[0227] 《Example Configuration of Unit 103X2 1》 Unit 103X2 comprises layers 111X2, 112X2, and 113X2. Layer 111X2 is sandwiched between layers 112X2 and 113X2.

[0228] The configuration used in unit 103X can also be used in unit 103X2. For example, the same configuration as unit 103X can be used in unit 103X2.

[0229] 《Example Configuration of Unit 103X2 2》 Furthermore, a different configuration from that of unit 103X can be used for unit 103X2. For example, a configuration that emits light with a different hue than the emitted color of unit 103X can be used for unit 103X2.

[0230] Specifically, a unit 103X that emits red and green light and a unit 103X2 that emits blue light can be stacked and used. This makes it possible to provide a light-emitting device that emits light of a desired color. For example, a light-emitting device that emits white light can be provided.

[0231] <Method for fabricating the 550X light-emitting device> For example, the electrodes 551X, 552X, unit 103X, intermediate layer 106X, and unit 103X2 can be formed using dry, wet, vapor deposition, droplet ejection, coating, or printing methods. Furthermore, different methods can be used to form each component.

[0232] Specifically, the light-emitting device 550X can be manufactured using vacuum deposition equipment, inkjet equipment, coating equipment such as spin coaters, gravure printing equipment, offset printing equipment, and screen printing equipment.

[0233] For example, electrodes can be formed using a wet method or a sol-gel method with a paste of a metallic material. Furthermore, an indium oxide-zinc oxide film can be formed by sputtering using a target containing 1 wt% to 20 wt% zinc oxide relative to indium oxide. Additionally, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by sputtering using a target containing 0.5 wt% to 5 wt% tungsten oxide and 0.1 wt% to 1 wt% zinc oxide relative to indium oxide.

[0234] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0235] (Embodiment 3) In this embodiment, the configuration of a light-emitting device 550X according to one aspect of the present invention will be described with reference to Figures 1(A) and 1(B).

[0236] <Example configuration of the 550X light-emitting device> The light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, and an intermediate layer 106X (see Figure 1(A)). For example, the configurations described in Embodiment 1 and Embodiment 2 can be used for the unit 103X, the unit 103X2, and the intermediate layer 106X.

[0237] Furthermore, the light-emitting device 550X has a layer 104X, which is sandwiched between the electrode 551X and the unit 103X.

[0238] 《Example configuration of electrode 551X》 For example, conductive materials can be used for electrode 551X. Specifically, films containing metals, alloys, or conductive compounds can be used for electrode 551X in single-layer or multi-layer configurations.

[0239] For example, a film that efficiently reflects light can be used for the electrode 551X. Specifically, an alloy containing silver and copper, an alloy containing silver and palladium, or a metal film such as aluminum can be used for the electrode 551X.

[0240] Also, for example, a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551X. Thereby, a microresonator structure (microcavity) can be provided in the light-emitting device 550X. Or, light of a predetermined wavelength can be extracted more efficiently than other light. Or, light with a narrow half-value width of the spectrum can be extracted. Or, light with a vivid color can be extracted.

[0241] Also, for example, a film having translucency for visible light can be used for the electrode 551X. Specifically, a thin metal film, an alloy film, or a conductive oxide film that is thin enough for light to pass through can be used for the electrode 551X either singly or in a stack.

[0242] In particular, a material having a work function of 4.0 eV or more can be suitably used for the electrode 551X.

[0243] For example, a conductive oxide containing indium can be used. Specifically, indium oxide, indium tin oxide (abbreviation: ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide, indium oxide containing tungsten and zinc oxide (abbreviation: IWZO), etc. can be used.

[0244] Also, for example, a conductive oxide containing zinc can be used. Specifically, zinc oxide, zinc oxide added with gallium, zinc oxide added with aluminum, etc. can be used.

[0245] In addition, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metallic materials (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0246] 《Example of Layer 104X Configuration 1》 A material with hole-injection properties can be used in layer 104X. Layer 104X can also be referred to as a hole-injection layer. This makes it easier to inject holes, for example, from electrode 551X. Alternatively, it allows for a reduction in the driving voltage of the light-emitting device 550X.

[0247] [Substances with electron-accepting properties] Organic and inorganic compounds can be used as electron-accepting materials. Electron-accepting materials can extract electrons from adjacent hole transport layers or hole-transporting materials by applying an electric field. For example, the electron-accepting material AM1, which can be used in layer 106X1, can be used in layer 104X.

[0248] [Example of composite material composition 1] Furthermore, for example, a composite material containing an electron-accepting substance and a hole-transporting material can be used for layer 104X. This allows not only materials with high work functions but also materials with low work functions to be used for electrode 551X. Alternatively, the material to be used for electrode 551X can be selected from a wide range of materials, regardless of the work function.

[0249] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as hole transport materials in composite materials. Furthermore, if the hole mobility is 1 × 10⁻⁶ -6 cm 2Materials with a Vs of 1 / Vs or higher can be suitably used as hole-transporting materials in composite materials. For example, a hole-transporting material that can be used in layer 112X can be used in composite materials.

[0250] Furthermore, materials with relatively deep HOMO levels can be suitably used as hole-transporting materials in composite materials. Specifically, it is preferable that the HOMO level is between -5.7 eV and -5.4 eV. This facilitates the injection of holes into unit 103X. It also facilitates the injection of holes into layer 112X. In addition, it can improve the reliability of the light-emitting device 550X. For example, a composite material that can be used in layer 106X1 can be used in layer 104X.

[0251] [Example of composite material composition 2] For example, a composite material containing an electron-accepting substance, a hole-transporting material, and an alkali metal fluoride or alkaline earth metal fluoride can be used as a hole-injecting material. In particular, a composite material in which fluorine atoms make up 20% or more of the atomic ratio can be suitably used. This can lower the refractive index of layer 104X. Alternatively, a layer with a low refractive index can be formed inside the light-emitting device 550X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0252] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0253] (Embodiment 4) In this embodiment, the configuration of a light-emitting device 550X according to one aspect of the present invention will be described with reference to Figures 1 and 2.

[0254] Figure 2(A) is a cross-sectional view illustrating the configuration of a light-emitting device according to one embodiment of the present invention. Figure 2(B) is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention having a different configuration from that of Figure 2(A).

[0255] <Configuration example 1 of the 550X light-emitting device> The light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, and an intermediate layer 106X (see Figure 1(A)). For example, the configurations described in Embodiment 1 and Embodiment 2 can be used for the unit 103X, the unit 103X2, and the intermediate layer 106X.

[0256] Furthermore, the light-emitting device 550X has a layer 105X, which is sandwiched between the electrode 552X and the unit 103X2.

[0257] 《Example configuration of electrode 552X》 For example, conductive materials can be used for electrode 552X. Specifically, materials containing metals, alloys, or conductive compounds can be used for electrode 552X in a single layer or in a multilayer structure.

[0258] For example, the material that can be used for electrode 551X described in Embodiment 3 can be used for electrode 552X. In particular, a material with a smaller work function than electrode 551X can be suitably used for electrode 552X. Specifically, a material with a work function of 3.8 eV or less is preferred.

[0259] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these can be used for electrode 552X.

[0260] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these elements, such as a magnesium-silver alloy or an aluminum-lithium alloy, can be used in electrode 552X.

[0261] 《Example of Layer 105X Configuration 1》 For example, an electron-injection material can be used in layer 105X. Layer 105X can also be referred to as an electron-injection layer.

[0262] Specifically, electron-donating materials can be used in layer 105X. Alternatively, a composite material of an electron-donating material and an electron-transporting material can be used in layer 105X. Alternatively, electride can be used in layer 105X. This makes it easier to inject electrons from electrode 552X, for example. Alternatively, materials with a large work function, not just a small work function, can be used in electrode 552X. Alternatively, a material can be selected for electrode 552X from a wide range of materials, regardless of the work function. Specifically, Al, Ag, ITO, silicon, or indium oxide-tin oxide containing silicon oxide can be used in electrode 552X. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0263] [Substances that possess electron-donating properties] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as electron-donating substances. Alternatively, organic compounds such as tetratianaphthalene (abbreviated as TTN), nickerosene, and decamethylnickerosene can also be used as electron-donating substances.

[0264] Examples of alkali metal compounds (including oxides, halides, and carbonates) that can be used include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinatolithium (abbreviated as Liq), etc.

[0265] As alkaline earth metal compounds (including oxides, halides, and carbonates), calcium fluoride (CaF2), etc., can be used.

[0266] [Example of composite material composition 1] Furthermore, materials composed of multiple types of substances can be used as materials with electron-injection properties. For example, a substance with electron-donating properties and a material with electron-transporting properties can be used as a composite material.

[0267] [Materials with electron transport properties] For example, under the condition that the square root of the electric field strength [V / cm] is 600, the electron mobility is 1 × 10⁻⁶. -7 cm 2 / Vs or more, 5×10 -5 cm 2 Materials with a Vs of 0.5 / Vs or less can be suitably used as electron-transporting materials. This allows for control of the amount of electrons injected into the light-emitting layer, or prevents the light-emitting layer from becoming electron-excessive.

[0268] Metal complexes or organic compounds having a π-electron-deficient heteroaromatic ring skeleton can be used in electron-transporting materials. For example, an electron-transporting material that can be used in layer 113X can be used in layer 105X.

[0269] [Example of composite material composition 2] Furthermore, a composite material can be made from a microcrystalline alkali metal fluoride and an electron-transporting material. Alternatively, a composite material can be made from a microcrystalline alkaline earth metal fluoride and an electron-transporting material. In particular, a composite material containing 50 wt% or more of alkali metal fluoride or alkaline earth metal fluoride can be suitably used. Alternatively, a composite material containing an organic compound having a bipyridine skeleton can be suitably used. This can reduce the refractive index of layer 105X, or improve the external quantum efficiency of the light-emitting device 550X.

[0270] [Example of composite material composition 3] For example, a composite material containing a first organic compound having lone pairs of electrons and a first metal can be used for layer 105X. Furthermore, it is preferable that the sum of the number of electrons in the first organic compound and the first metal is odd. The molar ratio of the first metal to one mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and even more preferably 0.2 to 0.8.

[0271] This allows the first organic compound, which has a lone pair of electrons, to interact with the first metal and form a partially occupied molecular orbital (SOMO). Furthermore, it reduces the barrier between the two when injecting electrons from electrode 552X into layer 105X.

[0272] Furthermore, the spin density measured using electron spin resonance (ESR) is preferably 1 × 10⁻⁶. 16 spins / cm 3 The above is more comfortable 5x10 16 spins / cm 3 More preferably 1 × 10 17 spins / cm 3 The composite material described above can be used for layer 105X.

[0273] [Organic compounds with lone pairs of electrons] For example, electron-transporting materials can be used in organic compounds containing lone pairs of electrons. For instance, compounds having electron-deficient heteroaromatic rings can be used. Specifically, compounds having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used. This allows for a reduction in the driving voltage of the light-emitting device 550X.

[0274] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) level of organic compounds containing lone pairs of electrons is between -3.6 eV and -2.3 eV. In general, the HOMO and LUMO levels of organic compounds can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0275] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz), and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0276] Furthermore, copper phthalocyanine can be used, for example, in organic compounds that possess lone pairs of electrons. Note that copper phthalocyanine has an odd number of electrons.

[0277] [First Metal] For example, if the first organic compound having a lone pair of electrons has an even number of electrons, a composite material of the first metal and the first organic compound, which belong to an odd group in the periodic table, can be used for layer 105X.

[0278] For example, manganese (Mn), a metal of Group 7; cobalt (Co), a metal of Group 9; copper (Cu), silver (Ag), and gold (Au), metals of Group 11; and aluminum (Al) and indium (In), metals of Group 13, are all odd-numbered groups in the periodic table. Furthermore, elements of Group 11 have lower melting points compared to elements of Group 7 or 9, making them suitable for vacuum deposition. Ag, in particular, is preferred due to its low melting point. Additionally, using a metal with poor reactivity with water or oxygen as the first metal can improve the moisture resistance of the light-emitting device 550X.

[0279] Furthermore, by using Ag in the electrode 552X and layer 105X, the adhesion between layer 105X and electrode 552X can be improved.

[0280] Furthermore, if the number of electrons in the first organic compound, which has a lone pair of electrons, is odd, a composite material of the first metal and the first organic compound, which belong to an even group in the periodic table, can be used for layer 105X. For example, iron (Fe), a metal in group 8, belongs to an even group in the periodic table.

[0281] [Electride] For example, a material obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum can be used as an electron-injection material.

[0282] [Example of composite material composition 4] Furthermore, materials composed of multiple types of substances can be used as materials with electron-injection properties. For example, an electron-accepting organic compound AM2, an electron-donating organic compound DM, and a basic organic compound BM can be used in a composite material. Specifically, the configuration that can be used in layer 106X2 as described in Embodiment 1 can be used in layer 105X.

[0283] 《Example of Layer 105X Configuration 2》 For example, layers 105X1 and 105X2 can be used for layer 105X (see Figure 2(A)). Layer 105X2 is sandwiched between electrode 552X and layer 105X1.

[0284] Layer 105X1 contains an electron-accepting organic compound AM2 and an electron-donating organic compound DM, and layer 105X2 contains a basic organic compound BM.

[0285] 《Example 3 of Layer 105X Configuration》 For example, layers 105X1 and 105X2 can be used for layer 105X (see Figure 2(A)). Layer 105X2 is sandwiched between electrode 552X and layer 105X1.

[0286] Layer 105X1 contains a basic organic compound BM, and layer 105X2 contains an electron-accepting organic compound AM2 and an electron-donating organic compound DM.

[0287] <Example Configuration of Light-Emitting Device 550X 2> The light-emitting device 550X described in this embodiment has an electrode 551X, an electrode 552X, and a unit 103X (see Figure 2(B)). The unit 103X is sandwiched between the electrodes 551X and 552X. The light-emitting device 550X also has layers 104X and 105X, with layer 104X sandwiched between the electrode 551X and unit 103X, and layer 105X sandwiched between the electrode 552X and unit 103X. Note that the light-emitting device 550X of one aspect of the present invention described using Figure 2(B) does not have an intermediate layer 106X and unit 103X2.

[0288] For example, the configuration described in Embodiment 2 can be used for unit 103X. Also, the configuration described in Embodiment 3 can be used for electrode 551X and layer 104X.

[0289] 《Example 4 of Layer 105X Configuration》 A material with electron-injection properties can be used in layer 105X. A composite material of multiple types of substances can be used as the material with electron-injection properties.

[0290] For example, an electron-accepting organic compound AM2, an electron-donating organic compound DM, and a basic organic compound BM can be used in the composite material. Specifically, the configuration that can be used in layer 106X2 as described in Embodiment 1 can be used in layer 105X.

[0291] 《Example 5 of Layer 105X Configuration》 For example, layers 105X1 and 105X2 can be used for layer 105X (see Figure 2(B)). Layer 105X2 is sandwiched between electrode 552X and layer 105X1.

[0292] Layer 105X1 contains an electron-accepting organic compound AM2 and an electron-donating organic compound DM, and layer 105X2 contains a basic organic compound BM.

[0293] 《Example 6 of Layer 105X Configuration》 For example, layers 105X1 and 105X2 can be used for layer 105X (see Figure 2(B)). Layer 105X2 is sandwiched between electrode 552X and layer 105X1.

[0294] Layer 105X1 contains a basic organic compound BM, and layer 105X2 contains an electron-accepting organic compound AM2 and an electron-donating organic compound DM.

[0295] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0296] (Embodiment 5) In this embodiment, the configuration of a display device 700 according to one aspect of the present invention will be described with reference to Figures 3 and 4.

[0297] Figure 3 is a cross-sectional view illustrating the configuration of a display device 700 according to one aspect of the present invention. Figure 4 is a cross-sectional view illustrating a configuration of a display device 700 according to one aspect of the present invention that differs from the configuration described using Figure 3.

[0298] <Example of display device 700 configuration 1> The display device 700 described in this embodiment has a light-emitting device 550X(i,j) and a light-emitting device 550Y(i,j) (see Figure 3). The light-emitting device 550Y(i,j) is adjacent to the light-emitting device 550X(i,j).

[0299] The display device 700 also has a substrate 510 and a functional layer 520. The functional layer 520 includes an insulating film 521, and the light-emitting devices 550X(i,j) and 550Y(i,j) are formed on the insulating film 521. The functional layer 520 is sandwiched between the substrate 510 and the light-emitting devices 550X(i,j).

[0300] 《Example configuration of the light-emitting device 550X(i,j)》 The light-emitting device 550X(i,j) includes an electrode 551X(i,j), an electrode 552X(i,j), a unit 103X(i,j), a unit 103X2(i,j), and an intermediate layer 106X(i,j). It also includes layers 104X(i,j) and 105X(i,j).

[0301] For example, the light-emitting device 550X described in Embodiments 1 to 4 can be used for the light-emitting device 550X(i,j). Specifically, a configuration that can be used for electrode 551X can be used for electrode 551X(i,j), and a configuration that can be used for electrode 552X can be used for electrode 552X(i,j). Also, a configuration that can be used for unit 103X can be used for unit 103X(i,j), and a configuration that can be used for unit 103X2 can be used for unit 103X2(i,j). Furthermore, a configuration that can be used for intermediate layer 106X can be used for intermediate layer 106X(i,j). Also, a configuration that can be used for layer 104X can be used for layer 104X(i,j), and a configuration that can be used for layer 105X can be used for layer 105X(i,j).

[0302] 《Example configuration of the light-emitting device 550Y(i,j)》 The light-emitting device 550Y(i,j) includes an electrode 551Y(i,j), an electrode 552Y(i,j), a unit 103Y(i,j), a unit 103Y2(i,j), and an intermediate layer 106Y(i,j). It also includes layers 104Y(i,j) and 105Y(i,j).

[0303] Electrode 551Y(i,j) is adjacent to electrode 551X(i,j), and electrode 551Y(i,j) has a gap 551XY(i,j) between it and electrode 551X(i,j). The potential supplied to electrode 551Y(i,j) may be the same as or different from that supplied to electrode 551X(i,j). By supplying different potentials, the light-emitting device 550Y(i,j) can be driven under different conditions than the light-emitting device 550X(i,j).

[0304] Electrode 552Y(i,j) overlaps with electrode 551Y(i,j).

[0305] Unit 103Y(i,j) is sandwiched between electrodes 551Y(i,j) and 552Y(i,j), and unit 103Y2(i,j) is sandwiched between electrode 552Y(i,j) and unit 103Y(i,j). In addition, the intermediate layer 106Y(i,j) is sandwiched between unit 103Y2(i,j) and unit 103Y(i,j).

[0306] Layer 104Y(i,j) is sandwiched between unit 103Y(i,j) and electrode 551Y(i,j), and layer 105Y(i,j) is sandwiched between electrode 552Y(i,j) and unit 103Y2(i,j).

[0307] For example, the configuration of the light-emitting device 550X described in Embodiments 1 to 4 can be used for the light-emitting device 550Y(i,j). Specifically, the configuration that can be used for electrode 551X can be used for electrode 551Y(i,j), and the configuration that can be used for electrode 552X can be used for electrode 552Y(i,j). Also, the configuration that can be used for unit 103X can be used for unit 103Y(i,j), and the configuration that can be used for unit 103X2 can be used for unit 103Y2(i,j). Furthermore, the configuration that can be used for intermediate layer 106X can be used for intermediate layer 106Y(i,j). Also, the configuration that can be used for layer 104X can be used for layer 104Y(i,j), and the configuration that can be used for layer 105X can be used for layer 105Y(i,j).

[0308] Furthermore, some of the components of the light-emitting device 550X(i,j) can be used in some of the components of the light-emitting device 550Y(i,j). For example, some of the conductive film that can be used in electrode 552X(i,j) can be used in electrode 552Y(i,j). This allows for the commonality of some components and simplifies the manufacturing process.

[0309] Furthermore, the light-emitting device 550Y(i,j) can be configured to emit light of a different hue than the light emitted by the light-emitting device 550X(i,j). For example, the hue of light ELY1 emitted by unit 103Y(i,j) can be made different from the hue of light ELX1. Similarly, the hue of light ELY2 emitted by unit 103Y2(i,j) can be made different from the hue of light ELX2.

[0310] Furthermore, the light-emitting device 550Y(i,j) can be configured to emit light of the same hue as the light-emitting device 550X(i,j).

[0311] For example, both the light-emitting device 550X(i,j) and the light-emitting device 550Y(i,j) may emit white light. Furthermore, by placing a colored layer on top of the light-emitting device 550X(i,j), light of a predetermined hue can be extracted from the white light. Alternatively, by placing another colored layer on top of the light-emitting device 550Y(i,j), light of a different predetermined hue can be extracted from the white light.

[0312] Furthermore, for example, both the light-emitting device 550X(i,j) and the light-emitting device 550Y(i,j) may emit blue light. A color conversion layer can be superimposed on the light-emitting device 550X(i,j) to convert blue light into light of a predetermined hue. Alternatively, another color conversion layer can be superimposed on the light-emitting device 550Y(i,j) to convert blue light into light of another predetermined hue. Blue light can be converted, for example, into green light or red light.

[0313] <Example configuration of display device 700 2> Furthermore, the display device 700 described in this embodiment has an insulating film 528 (see Figure 3).

[0314] 《Example of the configuration of insulating film 528》 The insulating film 528 has openings, one of which overlaps with electrode 551X(i,j), and the other opening overlaps with electrode 551Y(i,j). The insulating film 528 also overlaps with the gap 551XY(i,j).

[0315] 《Example of the configuration of gap 551XY(i,j)》 The gap 551XY(i,j) sandwiched between electrodes 551X(i,j) and 551Y(i,j) has, for example, a groove-like shape. This creates a step along the groove. Furthermore, a discontinued or thin portion is formed between the film deposited on the gap 551XY(i,j) and the film deposited on electrode 551X(i,j).

[0316] For example, when an anisotropic film deposition method such as thermal deposition is used, the discontinuous or thin portion is formed in the region 106XY1(i,j) sandwiched between layers 106X1(i,j) and 106Y1(i,j) along the step. In addition, the discontinuous or thin portion is formed in the region 106XY2(i,j) sandwiched between layers 106X2(i,j) and 106Y2(i,j).

[0317] This allows for the suppression of current flowing through region 106XY1(i,j), for example. It also allows for the suppression of current flowing between the intermediate layers 106X(i,j) and 106Y(i,j). Furthermore, it suppresses the phenomenon where the adjacent light-emitting device 550Y(i,j) unintentionally emits light in conjunction with the operation of the light-emitting device 550X(i,j).

[0318] <Example configuration of display device 700 3> The display device 700 described in this embodiment has a light-emitting device 550X(i,j) and a light-emitting device 550Y(i,j) (see Figure 4). The light-emitting device 550Y(i,j) is adjacent to the light-emitting device 550X(i,j).

[0319] Note that the display device 700 differs from the display device 700 described with reference to Figure 3 in that, in the portion overlapping with the gap 551XY(i,j), part or all of the components of the light-emitting device 550X(i,j) or light-emitting device 550Y(i,j) are removed, and the insulating film 528 is replaced with insulating films 528_1, 528_2, and 528_3. Here, the differing parts will be described in detail, and the above description will be used as a reference for parts that have the same configuration.

[0320] 《Example configuration of insulating film 528_1》 The insulating film 528_1 has openings, one of which overlaps with electrode 551X(i,j) and the other opening overlaps with electrode 551Y(i,j) (see Figure 4). In addition, the insulating film 528_1 has an opening that overlaps with the gap 551XY(i,j).

[0321] 《Example configuration of insulating film 528_2》 The insulating film 528_2 has openings, one of which overlaps with electrode 551X(i,j) and the other opening overlaps with electrode 551Y(i,j). The insulating film 528_2 also overlaps with the gap 551XY(i,j).

[0322] The insulating film 528_2 includes regions in contact with layer 104X(i,j), unit 103X(i,j), intermediate layer 106X(i,j), and unit 103X2(i,j).

[0323] Furthermore, the insulating film 528_2 includes regions that are in contact with layer 104Y(i,j), unit 103Y(i,j), intermediate layer 106Y(i,j), and unit 103Y2(i,j).

[0324] Furthermore, the insulating film 528_2 includes a region that is in contact with the insulating film 521.

[0325] 《Example configuration of insulating film 528_3》 The insulating film 528_3 has openings, one of which overlaps with electrode 551X(i,j) and the other opening overlaps with electrode 551Y(i,j). In addition, the insulating film 528_3 fills the groove formed in the region overlapping with the gap 551XY(i,j).

[0326] This allows for, for example, electrical insulation between the intermediate layer 106X(i,j) and the intermediate layer 106Y(i,j). It also allows for the suppression of current flowing through region 106XY1(i,j). Furthermore, it suppresses the phenomenon where the adjacent light-emitting device 550Y(i,j) unintentionally emits light in conjunction with the operation of light-emitting device 550X(i,j). Additionally, it reduces the magnitude of the step difference between the upper surface of unit 103X2(i,j) and the upper surface of unit 103Y2(i,j). It also suppresses the formation of discontinuous or thin-film areas between electrodes 552X(i,j) and 552Y(i,j) due to the step difference. Furthermore, a single conductive film can be used for both electrodes 552X(i,j) and 552Y(i,j).

[0327] For example, using photolithography, part or all of the components of the light-emitting device 550X(i,j) or light-emitting device 550Y(i,j) can be removed from the portion that overlaps with the gap 551XY(i,j).

[0328] Specifically, in the first step, a first insulating film, which will later become insulating film 528_1, is formed on a film that will later become unit 103Y2(i,j).

[0329] In the second step, an opening that overlaps with the gap 551XY(i,j) is formed in the first insulating film using photolithography.

[0330] In the third step, the insulating film is used as a resist to remove part or all of the components of the light-emitting device 550Y(i,j) from the region overlapping with the gap 551XY(i,j). For example, a dry etching method can be used. This forms a groove in the region overlapping with the gap 551XY(i,j).

[0331] In the fourth step, for example, a second insulating film, which will become insulating film 528_2, is formed using atomic layer deposition (ALD).

[0332] In the fifth step, for example, a photosensitive polymer is used to form an insulating film 528_3 and fill the groove formed in the region overlapping with the gap 551XY(i,j).

[0333] In the sixth step, using photolithography, an opening overlapping with the electrode 551Y(i,j) is formed in the first insulating film and the second insulating film, thereby forming insulating film 528_1 and insulating film 528_2.

[0334] In the seventh step, layer 105Y(i,j) and electrode 552Y(i,j) are formed consecutively on unit 103Y2(i,j).

[0335] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0336] (Embodiment 6) In this embodiment, the configuration of an apparatus according to one aspect of the present invention will be described with reference to Figures 5 to 7.

[0337] Figure 5 is a diagram illustrating the configuration of an apparatus according to one embodiment of the present invention. Figure 5(A) is a top view of an apparatus according to one embodiment of the present invention, and Figure 5(B) is a top view illustrating a part of Figure 5(A). Figure 5(C) is a cross-sectional view of the cutting lines X1-X2, X3-X4, and a pair of pixels 703(i,j) shown in Figure 5(A).

[0338] Figure 6 is a circuit diagram illustrating the configuration of an apparatus according to one embodiment of the present invention.

[0339] Figure 7 is a diagram illustrating the configuration of an apparatus according to one embodiment of the present invention. Figure 7(A) is a cross-sectional view of an apparatus according to one embodiment of the present invention, and Figure 7(B) is a cross-sectional view of an apparatus according to one embodiment of the present invention having a different configuration from the apparatus described using Figure 7(A). Figure 7(C) is a cross-sectional view of a light-emitting device that can be used in the apparatus shown in Figure 7(B).

[0340] In this specification, variables that take integer values ​​of 1 or more may be used as signs. For example, (p), which includes a variable p that takes an integer value of 1 or more, may be used as part of a sign that identifies any of up to p components. Also, for example, (m,n), which includes a variable m and a variable n that take integer values ​​of 1 or more, may be used as part of a sign that identifies any of up to m × n components.

[0341] <Example of display device 700 configuration 1> A display device 700 according to one aspect of the present invention has a region 231 (see Figure 5(A)). Region 231 comprises a pair of pixels 703(i,j).

[0342] 《Example of a set of 703 pixels (i,j)》 A pair of pixels 703(i,j) comprises pixels 702X(i,j) (see Figures 5(B) and 5(C)).

[0343] Pixel 702X(i,j) comprises a pixel circuit 530X(i,j) and a light-emitting device 550X(i,j). The light-emitting device 550X(i,j) is electrically connected to the pixel circuit 530X(i,j).

[0344] 《Example of Light-Emitting Device Configuration 1》 For example, the light-emitting device described in Embodiments 1 to 4 can be used as the light-emitting device 550X(i,j). The display device 700 has a function for displaying images.

[0345] <Example configuration of display device 700 2> Furthermore, a display device 700 according to one aspect of the present invention has a functional layer 540 and a functional layer 520 (see Figure 5(C)). The functional layer 540 overlaps with the functional layer 520.

[0346] The functional layer 540 includes a light-emitting device 550X(i,j).

[0347] The functional layer 520 includes pixel circuits 530X(i,j) and wiring (see Figure 5(C)). The pixel circuits 530X(i,j) are electrically connected to the wiring. For example, a conductive film provided in the aperture 591X or aperture 591Y of the functional layer 520 can be used for the wiring. The wiring electrically connects terminal 519B and the pixel circuits 530X(i,j). The conductive material CP electrically connects terminal 519B and the flexible printed circuit board FPC1.

[0348] <Example configuration of display device 700 3> Furthermore, a display device 700 according to one embodiment of the present invention has a drive circuit GD and a drive circuit SD (see Figure 5(A)).

[0349] Example configuration of the drive circuit GD The drive circuit GD supplies a first selection signal and a second selection signal.

[0350] 《Example configuration of the SD drive circuit》 The drive circuit SD supplies a first control signal and a second control signal.

[0351] Examples of wiring configurations The wiring includes conductive films G1(i), G2(i), S1(j), S2(j), ANO, VCOM2, and V0 (see Figure 6).

[0352] Conductive film G1(i) is supplied with a first selection signal, and conductive film G2(i) is supplied with a second selection signal.

[0353] Conductive film S1(j) is supplied with a first control signal, and conductive film S2(j) is supplied with a second control signal.

[0354] 《Example Configuration 1 of Pixel Circuit 530X(i,j)》 The pixel circuit 530X(i,j) is electrically connected to the conductive film G1(i) and the conductive film S1(j). Conductive film G1(i) supplies a first selection signal, and conductive film S1(j) supplies a first control signal.

[0355] The pixel circuit 530X(i,j) drives the light-emitting device 550X(i,j) based on a first selection signal and a first control signal. The light-emitting device 550X(i,j) also emits light.

[0356] The light-emitting device 550X(i,j) has one electrode electrically connected to the pixel circuit 530X(i,j) and the other electrode electrically connected to the conductive film VCOM2.

[0357] 《Example Configuration 2 of Pixel Circuit 530X(i,j)》 The pixel circuit 530X(i,j) includes switch SW21, switch SW22, transistor M21, capacitor C21, and node N21.

[0358] Transistor M21 comprises a gate electrode electrically connected to node N21, a first electrode electrically connected to light-emitting device 550X(i,j), and a second electrode electrically connected to conductive film ANO.

[0359] The switch SW21 comprises a first terminal electrically connected to node N21, a second terminal electrically connected to conductive film S1(j), and a gate electrode that has the function of controlling a conduction state or a non-conduction state based on the potential of conductive film G1(i).

[0360] The switch SW22 comprises a first terminal electrically connected to the conductive film S2(j), and a gate electrode that has the function of controlling a conduction state or a non-conduction state based on the potential of the conductive film G2(i).

[0361] Capacitor C21 comprises a conductive film electrically connected to node N21 and a conductive film electrically connected to the second electrode of switch SW22.

[0362] This allows the image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Or, the intensity of the light emitted by the light-emitting device 550X(i,j) can be controlled using the potential of node N21. As a result, a novel device with superior convenience, usefulness, and reliability can be provided.

[0363] 《Example 3 of the Pixel Circuit 530X(i,j) Configuration》 The pixel circuit 530X(i,j) includes a switch SW23, a node N22, and a capacitor C22.

[0364] The switch SW23 comprises a first terminal electrically connected to the conductive film V0, a ​​second terminal electrically connected to node N22, and a gate electrode that has the function of controlling a conduction state or a non-conduction state based on the potential of the conductive film G2(i).

[0365] Capacitor C22 comprises a conductive film electrically connected to node N21 and a conductive film electrically connected to node N22.

[0366] The first electrode of transistor M21 is electrically connected to node N22.

[0367] 《Example Configuration 1 of Pixel 702X(i,j)》 Pixel 702X(i,j) comprises a light-emitting device 550X(i,j) and a pixel circuit 530X(i,j) (see Figure 7(A)). Functional layer 540 includes a light-emitting device 550X(i,j) and a color layer CFX, and functional layer 520 includes a pixel circuit 530X(i,j).

[0368] The light-emitting device 550X(i,j) is a top-emission type light-emitting device, and the light-emitting device 550X(i,j) emits optical ELX to the side where the functional layer 520 is not located.

[0369] The colored layer CFX transmits a portion of the light emitted by the light-emitting device 550X(i,j). For example, it can transmit a portion of white light to extract blue, green, or red light. Alternatively, a color conversion layer can be used instead of the colored layer CFX. This allows for the conversion of short-wavelength light into long-wavelength light.

[0370] 《Example configuration of pixel 702X(i,j) 2》 The pixel 702X(i,j), as explained using Figure 7(B), is equipped with a bottom-emission type light-emitting device. The light-emitting device 550X(i,j) emits optical ELX towards the side where the functional layer 520 is located.

[0371] The functional layer 520 includes region 520T, which transmits optical ELX. Additionally, the functional layer 520 includes a colored layer CFX, which overlaps with region 520T.

[0372] 《Example of Light-Emitting Device Configuration 2》 For example, a light-emitting device having the same configuration as the light-emitting device 550X described using Figure 7(C) can be used as the light-emitting device 550X(i,j).

[0373] The light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, a unit 103X3, an intermediate layer 106X, and an intermediate layer 106XX.

[0374] Unit 103X is sandwiched between electrodes 551X and 552X, unit 103X2 is sandwiched between electrode 552X and unit 103X, and unit 103X3 is sandwiched between electrode 552X and unit 103X2. Additionally, intermediate layer 106X is sandwiched between unit 103X2 and unit 103X, and intermediate layer 106XX is sandwiched between unit 103X3 and unit 103X2.

[0375] Unit 103X has the function of emitting optical ELX1, unit 103X2 has the function of emitting optical ELX21 and optical ELX22, and unit 103X3 has the function of emitting optical ELX3. Intermediate layer 106X has the function of supplying electrons to unit 103X and holes to unit 103X2. Intermediate layer 106XX has the function of supplying electrons to unit 103X2 and holes to unit 103X3.

[0376] Furthermore, the configurations that can be used in the light-emitting device 550X described in Embodiments 1 to 4 can also be used in the electrodes 551X, 552X, unit 103X, and unit 103X2. In addition, the configurations that can be used in unit 103X can be used in unit 103X3, and the configurations that can be used in the intermediate layer 106X can be used in the intermediate layer 106XX. For example, a light-emitting material that emits blue light can be used in layers 111X and 111X3.

[0377] 《Example configuration of Unit 103X2》 For example, layers 111X21 and 111X22 can be used in unit 103X2. Both layers 111X21 and 111X22 contain luminescent materials. For example, a luminescent material that emits red light can be used in layer 111X21. Also, for example, a luminescent material that emits yellow light can be used in layer 111X22.

[0378] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0379] (Embodiment 7) This embodiment describes a light-emitting device using a light-emitting device described in any one of Embodiments 1 to 4.

[0380] In this embodiment, a light-emitting device manufactured using the light-emitting device described in any one of Embodiments 1 to 4 will be described with reference to Figure 8. Figure 8(A) is a top view showing the light-emitting device, and Figure 8(B) is a cross-sectional view obtained by cutting Figure 8(A) along A and C. This light-emitting device has a pixel section 602 and a drive circuit section to control the light emission of the light-emitting device, and the drive circuit section includes a source line drive circuit 601 and a gate line drive circuit 603. The light-emitting device also includes a sealing substrate 604 and a sealing material 605, and the sealing material 605 surrounds a space 607.

[0381] The routing wiring 608 is for transmitting signals input to the source line drive circuit 601 and the gate line drive circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from the FPC (flexible printed circuit) which serves as the external input terminal 609. Although only the FPC is shown in the diagram, a printed circuit board (PWB) may be attached to this FPC. In this specification, the light-emitting device includes not only the light-emitting device itself, but also the state in which the FPC or PWB is attached to it.

[0382] Next, the cross-sectional structure will be explained using Figure 8(B). A drive circuit section and a pixel section are formed on the element substrate 610, and here, the source line drive circuit 601, which is the drive circuit section, and one pixel in the pixel section 602 are shown.

[0383] The element substrate 610 may be manufactured using a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or other materials, as well as a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, or acrylic resin.

[0384] The structure of the transistor used in the pixel or driving circuit is not particularly limited. For example, it may be an inverse staggered transistor or a staggered transistor. It may also be a top-gate or bottom-gate transistor. The semiconductor material used for the transistor is not particularly limited; for example, silicon, germanium, silicon carbide, gallium nitride, etc., can be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn metal oxide, may be used.

[0385] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having a crystalline region in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0386] Here, it is preferable to use oxide semiconductors for semiconductor devices such as transistors used in the pixels or driving circuits described above, as well as transistors used in touch sensors and the like, which will be described later. In particular, it is preferable to use oxide semiconductors with a wider bandgap than silicon. By using oxide semiconductors with a wider bandgap than silicon, the current in the off state of the transistor can be reduced.

[0387] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). More preferably, it is an oxide semiconductor containing an oxide represented as an In-M-Zn oxide (where M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0388] In particular, it is preferable to use an oxide semiconductor film as the semiconductor layer, which has multiple crystalline portions, the c-axis of which is oriented perpendicular to the surface on which the semiconductor layer is formed or to the upper surface of the semiconductor layer, and which does not have grain boundaries between adjacent crystalline portions.

[0389] By using such materials as semiconductor layers, fluctuations in electrical properties can be suppressed, enabling the realization of highly reliable transistors.

[0390] Furthermore, due to its low off-current, the transistor having the aforementioned semiconductor layer can retain the charge stored in the capacitor via the transistor for a long period of time. By applying such transistors to pixels, it becomes possible to maintain the gradation of the image displayed in each display area while simultaneously stopping the drive circuit. As a result, electronic devices with extremely reduced power consumption can be realized.

[0391] It is preferable to provide an undercoat to stabilize the characteristics of the transistor. As the undercoat, an inorganic insulating film such as a silicon oxide film, silicon nitride film, silicon oxynitride film, or silicon nitride film can be used and fabricated as a single layer or in layers. The undercoat can be formed using sputtering, CVD (Chemical Vapor Deposition) (plasma CVD, thermal CVD, MOCVD (Metal Organic CVD), etc.), ALD (Atomic Layer Deposition), coating, printing, etc. Note that the undercoat may be omitted if not necessary.

[0392] Note that FET623 is one of the transistors formed in the source line drive circuit 601. The drive circuit can be formed using various CMOS, PMOS, or NMOS circuits. In this embodiment, a driver-integrated type with the drive circuit formed on the substrate is shown, but this is not necessarily required, and the drive circuit can be formed externally instead of on the substrate.

[0393] Furthermore, although the pixel section 602 is formed by a plurality of pixels including a switching FET 611 and a current control FET 612 and a first electrode 613 electrically connected to its drain, it is not limited to this, and the pixel section may be a combination of three or more FETs and a capacitive element.

[0394] Furthermore, an insulator 614 is formed to cover the end of the first electrode 613. This can be formed by using a positive-type photosensitive acrylic resin film.

[0395] Furthermore, in order to ensure good coverage of the EL layer and the like that will be formed later, a curved surface with curvature is formed at the upper or lower end of the insulator 614. For example, when a positive-type photosensitive acrylic resin is used as the material for the insulator 614, it is preferable to have a curved surface with a radius of curvature (0.2 μm or more and 3 μm or less) only at the upper end of the insulator 614. In addition, either a negative-type photosensitive resin or a positive-type photosensitive resin can be used as the insulator 614.

[0396] An EL layer 616 and a second electrode 617 are formed on the first electrode 613, respectively. Here, it is desirable to use a material with a large work function for the first electrode 613 which functions as an anode. For example, in addition to single-layer films such as ITO film, silicon-containing indium tin oxide film, indium oxide film containing 2 wt% to 20 wt% zinc oxide, titanium nitride film, chromium film, tungsten film, Zn film, and Pt film, a laminate of titanium nitride film and a film mainly composed of aluminum, or a three-layer structure of titanium nitride film, a film mainly composed of aluminum, and titanium nitride film can be used. Furthermore, a laminated structure has low resistance as wiring, good ohmic contact can be obtained, and it can function as an anode.

[0397] Furthermore, the EL layer 616 is formed by various methods such as vapor deposition using a vapor deposition mask, inkjet printing, and spin coating. The EL layer 616 includes the configuration described in any one of Embodiments 1 to 4. In addition, other materials constituting the EL layer 616 may be low molecular weight compounds or high molecular weight compounds (including oligomers and dendrimers).

[0398] Furthermore, it is preferable to use a material with a small work function (such as Al, Mg, Li, Ca, or alloys or compounds thereof (MgAg, MgIn, AlLi, etc.)) for the second electrode 617, which is formed on the EL layer 616 and functions as a cathode. When light generated in the EL layer 616 is transmitted through the second electrode 617, it is preferable to use a laminate of a thin metal film and a transparent conductive film (such as ITO, indium oxide containing 2 wt% to 20 wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the second electrode 617.

[0399] The first electrode 613, the EL layer 616, and the second electrode 617 form a light-emitting device. This light-emitting device is the light-emitting device described in any one of Embodiments 1 to 4. The pixel portion has multiple light-emitting devices formed on it, and in the light-emitting device of this embodiment, both the light-emitting device described in any one of Embodiments 1 to 4 and light-emitting devices having other configurations may be mixed together.

[0400] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, the light-emitting device 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. The space 607 is filled with a filler material, which may be an inert gas (such as nitrogen or argon) or a sealing material. A recess is formed in the sealing substrate, and a desiccant is placed therein to suppress deterioration due to the effects of moisture, which is a preferred configuration.

[0401] Furthermore, it is preferable to use epoxy resin or glass frit for the sealing material 605. It is also desirable that these materials are as impermeable to moisture and oxygen as possible. In addition to glass substrates or quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, or acrylic resin can be used as the material for the sealing substrate 604.

[0402] Although not shown in Figures 8(A) and 8(B), a protective film may be provided on the second electrode. The protective film may be formed of an organic resin film or an inorganic insulating film. Alternatively, the protective film may be formed to cover the exposed portion of the sealing material 605. Furthermore, the protective film can be provided to cover the surface and sides of the pair of substrates, the sealing layer, the insulating layer, and other exposed sides.

[0403] The protective film can be made of a material that is impermeable to impurities such as water. Therefore, it is possible to effectively suppress the diffusion of impurities such as water from the outside to the inside.

[0404] Materials that constitute the protective film can include oxides, nitrides, fluorides, sulfides, ternary compounds, metals, or polymers. For example, materials containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, or indium oxide can be used. Other materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride can be used. Nitrides containing titanium and aluminum, oxides containing titanium and aluminum, oxides containing aluminum and zinc, sulfides containing manganese and zinc, sulfides containing cerium and strontium, oxides containing erbium and aluminum, oxides containing yttrium and zirconium can be used.

[0405] It is preferable to form the protective film using a film deposition method that provides good step coverage. One such method is atomic layer deposition (ALD). It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, it is possible to form a dense protective film with reduced defects such as cracks or pinholes, or a protective film with a uniform thickness. Furthermore, it is possible to reduce the damage inflicted on the processed workpiece when forming the protective film.

[0406] For example, by using the ALD method to form a protective film, it is possible to create a uniform, low-defect protective film on surfaces with complex uneven shapes, or on the top, sides, and back surfaces of a touch panel.

[0407] As described above, a light-emitting device can be obtained using the light-emitting device described in any one of Embodiments 1 to 4.

[0408] Since the light-emitting device in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 4, a light-emitting device with good characteristics can be obtained. Specifically, since the light-emitting device described in any one of Embodiments 1 to 4 has good luminous efficiency, it is possible to make a light-emitting device with low power consumption.

[0409] Figure 9 shows an example of a light-emitting device that is made full-color by forming a light-emitting device that emits white light and providing a colored layer (color filter), etc. Figure 9(A) shows a substrate 1001, a base insulating film 1002, a gate insulating film 1003, a gate electrode 1006, a gate electrode 1007, a gate electrode 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, a pixel portion 1040, a drive circuit portion 1041, electrodes 1024W, 1024R, 1024G, and 1024B of the light-emitting device, a partition wall 1025, an EL layer 1028, an electrode 1029 of the light-emitting device, a sealing substrate 1031, a sealing material 1032, etc.

[0410] In Figure 9(A), the colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are provided on a transparent substrate 1033. A black matrix 1035 may also be provided. The transparent substrate 1033 on which the colored layers and black matrix are provided is aligned and fixed to the substrate 1001. The colored layers and black matrix 1035 are covered with an overcoat layer 1036. In Figure 9(A), there is an emissive layer that emits light to the outside without transmitting through the colored layers, and an emissive layer that emits light to the outside by transmitting through each colored layer. Light that does not transmit through the colored layers is white, and light that transmits through the colored layers is red, green, and blue, so an image can be represented with four colored pixels.

[0411] Figure 9(B) shows an example in which colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are formed between the gate insulating film 1003 and the first interlayer insulating film 1020. Thus, the colored layers may also be provided between the substrate 1001 and the encapsulating substrate 1031.

[0412] Furthermore, although the light-emitting device described above is a bottom-emission type device that extracts light from the substrate 1001 on which the FET is formed, it may also be a top-emission type device that extracts light from the sealing substrate 1031. A cross-sectional view of the top-emission type light-emitting device is shown in Figure 10. In this case, the substrate 1001 can be a substrate that does not transmit light. The process is the same as for the bottom-emission type light-emitting device until the connecting electrode that connects the FET and the anode of the light-emitting device is fabricated. After that, a third interlayer insulating film 1037 is formed covering the electrode 1022. This insulating film may also play a role in planarization. The third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film, as well as other known materials.

[0413] Electrodes 1024W, 1024R, 1024G, and 1024B of the light-emitting device are designated as anodes here, but they may also be cathodes. Furthermore, in the case of a top-emission type light-emitting device as shown in Figure 10, it is preferable that electrodes 1024W, 1024R, 1024G, and 1024B be reflective electrodes. The configuration of the EL layer 1028 shall be as described as unit 103X in any one of Embodiments 1 to 4, and shall be an element structure that produces white light emission.

[0414] In a top-emission structure as shown in Figure 10, sealing can be performed with a sealing substrate 1031 having colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer 1034B). A black matrix 1035 may also be provided on the sealing substrate 1031 so as to be located between pixels. The colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer 1034B) or the black matrix 1035 may be covered with an overcoat layer. The sealing substrate 1031 should be a translucent substrate. In addition, although an example of full-color display using four colors, red, green, blue, and white, is shown here, it is not particularly limited, and full-color display may also be performed using four colors, red, yellow, green, and blue, or three colors, red, green, and blue.

[0415] In top-emission type light-emitting devices, a microcavity structure can be suitably applied. A light-emitting device having a microcavity structure is obtained by using a reflective electrode as the first electrode and a semi-transparent / semi-reflective electrode as the second electrode. There is at least an EL layer between the reflective electrode and the semi-transparent / semi-reflective electrode, and there is at least a light-emitting layer that forms a light-emitting region.

[0416] The reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and its resistivity is 1 × 10⁻⁶. -2 The film is assumed to have a density of Ω·cm or less. Furthermore, the semi-transparent / semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and its resistivity is 1 × 10⁻⁶. -2 Assume the membrane is less than Ω·cm in diameter.

[0417] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transparent / semi-reflective electrode, causing resonance.

[0418] This light-emitting device allows you to change the optical distance between the reflective electrode and the semi-transparent / semi-reflective electrode by changing the thickness of the transparent conductive film or the aforementioned composite material, carrier transport material, etc. This makes it possible to strengthen light of resonant wavelengths and attenuate light of non-resonant wavelengths between the reflective electrode and the semi-transparent / semi-reflective electrode.

[0419] Furthermore, since the light reflected back by the reflective electrode (first reflected light) interferes significantly with the light that directly enters the semi-transparent / semi-reflective electrode from the light-emitting layer (first incident light), it is preferable to adjust the optical distance between the reflective electrode and the light-emitting layer to (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is the wavelength of the light emission to be amplified). By adjusting this optical distance, the phases of the first reflected light and the first incident light can be aligned, and the light emission from the light-emitting layer can be further amplified.

[0420] In the above configuration, the EL layer may have a structure with multiple light-emitting layers or a structure with a single light-emitting layer. For example, it may be applied to a configuration in which multiple EL layers are provided in a single light-emitting device with a charge generation layer in between, and one or more light-emitting layers are formed in each EL layer, in combination with the tandem light-emitting device configuration described above.

[0421] By incorporating a microcavity structure, it becomes possible to enhance the emission intensity in the front direction at specific wavelengths, thereby reducing power consumption. Furthermore, in the case of a light-emitting device that displays images using four sub-pixels of red, yellow, green, and blue, in addition to the brightness enhancement effect of yellow emission, a microcavity structure tailored to the wavelength of each color can be applied to all sub-pixels, resulting in a light-emitting device with excellent characteristics.

[0422] Since the light-emitting device in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 4, a light-emitting device with good characteristics can be obtained. Specifically, since the light-emitting device described in any one of Embodiments 1 to 4 has good luminous efficiency, it is possible to make a light-emitting device with low power consumption.

[0423] Up to this point, we have described an active matrix type light-emitting device, but from here on we will describe a passive matrix type light-emitting device. Figure 11 shows a passive matrix type light-emitting device manufactured by applying the present invention. Figure 11(A) is a perspective view showing the light-emitting device, and Figure 11(B) is a cross-sectional view of Figure 11(A) cut along the X and Y lines. In Figure 11, an EL layer 955 is provided on the substrate 951 between electrodes 952 and 956. The ends of electrodes 952 are covered with an insulating layer 953. A partition layer 954 is provided on the insulating layer 953. The side walls of the partition layer 954 have a slope such that the distance between one side wall and the other side wall narrows as they get closer to the substrate surface. In other words, the cross-section of the partition layer 954 in the short-side direction is trapezoidal, with the bottom side (facing the same direction as the surface direction of the insulating layer 953 and in contact with the insulating layer 953) being shorter than the top side (facing the same direction as the surface direction of the insulating layer 953 and not in contact with the insulating layer 953). By providing the partition layer 954 in this way, it is possible to prevent malfunctions of the light-emitting device caused by static electricity, etc. Furthermore, even in a passive matrix type light-emitting device, if the light-emitting device described in any one of Embodiments 1 to 4 is used, it is possible to make a light-emitting device with good reliability or a light-emitting device with low power consumption.

[0424] As described above, the light-emitting device is suitable for use as a display device for representing images because it is possible to control each of the numerous minute light-emitting devices arranged in a matrix.

[0425] Furthermore, this embodiment can be freely combined with other embodiments.

[0426] (Embodiment 8) In this embodiment, an example of using the light-emitting device described in any one of Embodiments 1 to 4 as an illumination device will be described with reference to Figure 12. Figure 12(B) is a top view of the illumination device, and Figure 12(A) is a cross-sectional view of ef in Figure 12(B).

[0427] In this embodiment, the lighting device has a first electrode 401 formed on a translucent substrate 400 which serves as a support. The first electrode 401 corresponds to the electrode 551X in any one of Embodiments 1 to 4. When light is extracted from the first electrode 401 side, the first electrode 401 is formed from a translucent material.

[0428] A pad 412 for supplying voltage to the second electrode 404 is formed on the substrate 400.

[0429] An EL layer 403 is formed on the first electrode 401. The EL layer 403 corresponds to a configuration combining layer 104X, unit 103X, and layer 105X in any one of Embodiments 1 to 4, or a configuration combining layer 104X, unit 103X, intermediate layer 106X, unit 103X2, and layer 105X. Please refer to the relevant description for details on these configurations.

[0430] A second electrode 404 is formed by covering the EL layer 403. The second electrode 404 corresponds to electrode 552X in any one of Embodiments 1 to 4. When light emission is extracted from the first electrode 401 side, the second electrode 404 is formed of a material with high reflectivity. Voltage is supplied to the second electrode 404 by connecting it to the pad 412.

[0431] As described above, the lighting device shown in this embodiment has a light-emitting device having a first electrode 401, an EL layer 403, and a second electrode 404. Since this light-emitting device is a light-emitting device with high luminous efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.

[0432] The lighting device is completed by fixing and sealing the substrate 400 on which the light-emitting device having the above configuration is formed, and the sealing substrate 407 using sealing materials 405 and 406. Either sealing material 405 or 406 may be used. In addition, a desiccant can be mixed into the inner sealing material 406 (not shown in Figure 12(B)), which allows for the adsorption of moisture and leads to improved reliability.

[0433] Furthermore, by extending the pad 412 and a portion of the first electrode 401 outside the sealing material 405 and sealing material 406, it can be used as an external input terminal. Alternatively, an IC chip 420 with a converter or the like may be placed on top of it.

[0434] As described above, the lighting device described in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 4 as the EL element, and can be a lighting device with low power consumption.

[0435] (Embodiment 9) This embodiment describes an example of an electronic device that includes a light-emitting device described in any one of Embodiments 1 to 4 as part of it. The light-emitting device described in any one of Embodiments 1 to 4 has good luminous efficiency and is a light-emitting device with low power consumption. As a result, the electronic device described in this embodiment can be an electronic device having a light-emitting part with low power consumption.

[0436] Examples of electronic devices to which the above-mentioned light-emitting devices are applied include television equipment (also called televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, personal digital assistants, sound playback devices, and large game machines such as pachinko machines. Specific examples of these electronic devices are shown below.

[0437] Figure 13(A) shows an example of a television system. The television system has a display unit 7103 incorporated into a housing 7101. This figure also shows a configuration in which the housing 7101 is supported by a stand 7105. The display unit 7103 is capable of displaying images, and the display unit 7103 is configured by arranging the light-emitting devices described in any one of Embodiments 1 to 4 in a matrix.

[0438] The television system can be operated using the operation switches on the housing 7101 or a separate remote control unit 7110. The remote control unit 7110 has operation keys 7109 that allow for channel or volume control, and the image displayed on the display unit 7103 can be controlled. Alternatively, a display unit 7107 may be provided on the remote control unit 7110 to display output information.

[0439] The television system shall consist of a receiver or modem. The receiver will be able to receive general television broadcasts, and by connecting to a wired or wireless communication network via the modem, it will also be possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0440] Figure 13(B) shows a computer, which includes a main unit 7201, a housing 7202, a display unit 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, etc. This computer is manufactured by arranging the light-emitting devices described in any one of Embodiments 1 to 4 in a matrix and using them for the display unit 7203. The computer in Figure 13(B) may also take the form shown in Figure 13(C). The computer in Figure 13(C) is provided with a second display unit 7210 instead of the keyboard 7204 and pointing device 7206. The second display unit 7210 is a touch panel, and input can be performed by operating the input display shown on the second display unit 7210 with a finger or a dedicated pen. In addition to the input display, the second display unit 7210 can also display other images. The display unit 7203 may also be a touch panel. The two screens are connected by a hinge, which prevents problems such as scratching or damaging the screens when storing or transporting the device.

[0441] Figure 13(D) shows an example of a mobile terminal. The mobile terminal includes a display unit 7402 incorporated into a housing 7401, as well as operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. The mobile terminal has a display unit 7402 made by arranging the light-emitting devices described in any one of Embodiments 1 to 4 in a matrix.

[0442] The mobile terminal shown in Figure 13(D) can also be configured to allow information input by touching the display unit 7402 with a finger or other object. In this case, operations such as making a phone call or composing an email can be performed by touching the display unit 7402 with a finger or other object.

[0443] The display unit 7402 has three main modes. The first is a display mode that primarily displays images, the second is an input mode that primarily inputs information such as text, and the third is a display + input mode that combines the display mode and the input mode.

[0444] For example, when making a phone call or composing an email, the display unit 7402 should be set to a text input mode, which primarily focuses on text input, and the user should perform the text input operation displayed on the screen. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display unit 7402.

[0445] Furthermore, by providing a detection device with tilt-detecting sensors such as a gyroscope and an accelerometer inside the mobile terminal, the orientation of the mobile terminal (portrait or landscape) can be determined, and the screen display of the display unit 7402 can be automatically switched accordingly.

[0446] Furthermore, the screen mode can be switched by touching the display unit 7402 or by operating the operation button 7403 on the housing 7401. It is also possible to switch modes depending on the type of image displayed on the display unit 7402. For example, if the image signal displayed on the display unit is video data, it can be switched to display mode; if it is text data, it can be switched to input mode.

[0447] Furthermore, in input mode, the system may detect a signal detected by the optical sensor of the display unit 7402 and, if there is no input via touch operation on the display unit 7402 for a certain period of time, control may be made to switch the screen mode from input mode to display mode.

[0448] The display unit 7402 can also function as an image sensor. For example, by touching the display unit 7402 with the palm or finger, palm prints, fingerprints, etc., can be captured to perform user authentication. Furthermore, by using a backlight that emits near-infrared light or a sensing light source that emits near-infrared light in the display unit, finger veins, palm veins, etc., can also be captured.

[0449] Figure 14(A) is a schematic diagram showing an example of a cleaning robot.

[0450] The cleaning robot 5100 has a display 5101 on its top surface, multiple cameras 5102 on its sides, a brush 5103, and control buttons 5104. Although not shown in the illustration, the cleaning robot 5100 also has wheels, a suction port, etc. on its underside. The cleaning robot 5100 is also equipped with various sensors, including an infrared sensor, an ultrasonic sensor, an accelerometer, a piezoelectric sensor, a light sensor, and a gyroscope. Furthermore, the cleaning robot 5100 is equipped with a means of wireless communication.

[0451] The cleaning robot 5100 is self-propelled, can detect dirt 5120, and can suck up the dirt through a suction port located on its underside.

[0452] Furthermore, the cleaning robot 5100 can analyze images captured by the camera 5102 to determine the presence or absence of obstacles such as walls, furniture, or steps. If the image analysis detects objects that could become entangled in the brush 5103, such as wiring, it can stop the brush 5103 from rotating.

[0453] The display 5101 can display information such as the remaining battery level or the amount of dirt collected. The path taken by the cleaning robot 5100 may also be displayed on the display 5101. Alternatively, the display 5101 may be a touch panel, and operation buttons 5104 may be provided on the display 5101.

[0454] The cleaning robot 5100 can communicate with a portable electronic device 5140, such as a smartphone. Images captured by the camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the cleaning robot 5100 can check the status of the room even when they are away from home. In addition, the display 5101 can be viewed on the portable electronic device 5140, such as a smartphone.

[0455] A light-emitting device according to one aspect of the present invention can be used in a display 5101.

[0456] The robot 2100 shown in Figure 14(B) includes a computing unit 2110, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a movement mechanism 2108.

[0457] The microphone 2102 has the function of detecting the user's voice and ambient sounds. The speaker 2104 has the function of emitting sound. The robot 2100 can communicate with the user using the microphone 2102 and speaker 2104.

[0458] The display 2105 has the function of displaying various types of information. The robot 2100 can display the information desired by the user on the display 2105. The display 2105 may be equipped with a touch panel. The display 2105 may also be a detachable information terminal, and by installing it in a fixed position on the robot 2100, charging and data transfer can be made possible.

[0459] The upper camera 2103 and the lower camera 2106 have the function of imaging the area around the robot 2100. In addition, the obstacle sensor 2107 can detect the presence or absence of obstacles in the direction of travel when the robot 2100 moves forward using the movement mechanism 2108. The robot 2100 can recognize its surrounding environment and move safely using the upper camera 2103, the lower camera 2106 and the obstacle sensor 2107. The light-emitting device according to one aspect of the present invention can be used in the display 2105.

[0460] Figure 14(C) shows an example of a goggle-type display. The goggle-type display includes, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys (including a power switch or operation switch), connection terminals 5006, a sensor 5007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 5008, a display unit 5002, a support unit 5012, an earphone 5013, etc.

[0461] A light-emitting device according to one aspect of the present invention can be used in the display unit 5001 and the display unit 5002.

[0462] Figure 15 shows an example in which the light-emitting device described in any one of Embodiments 1 to 4 is used in a desk lamp, which is a lighting device. The desk lamp shown in Figure 15 has a housing 2001 and a light source 2002, and the lighting device described in Embodiment 8 may be used as the light source 2002.

[0463] Figure 16 shows an example of using the light-emitting device described in any one of Embodiments 1 to 4 as an indoor lighting device 3001. Since the light-emitting device described in any one of Embodiments 1 to 4 is a light-emitting device with high luminous efficiency, it can be used as a lighting device with low power consumption. Furthermore, since the light-emitting device described in any one of Embodiments 1 to 4 can be made to cover a large area, it can be used as a large-area lighting device. In addition, since the light-emitting device described in any one of Embodiments 1 to 4 is thin, it can be used as a thin lighting device.

[0464] The light-emitting device described in any one of Embodiments 1 to 4 can also be mounted on the windshield or dashboard of an automobile. Figure 17 shows one embodiment in which the light-emitting device described in any one of Embodiments 1 to 4 is used on the windshield or dashboard of an automobile. Display areas 5200 to 5203 are display areas provided using the light-emitting device described in any one of Embodiments 1 to 4.

[0465] Display area 5200 and display area 5201 are display devices equipped with a light-emitting device according to any one of Embodiments 1 to 4, which is installed on the windshield of an automobile. The light-emitting device according to any one of Embodiments 1 to 4 can be made into a so-called see-through light-emitting device, where the opposite side is visible, by making the first electrode and the second electrode from translucent electrodes. If the display is in a see-through state, it can be installed on the windshield of an automobile without obstructing the view. When providing transistors for driving, it is preferable to use translucent transistors such as organic transistors made of organic semiconductor materials or transistors using oxide semiconductors.

[0466] The display area 5202 is a display device equipped with a light-emitting device according to any one of Embodiments 1 to 4, which is provided on the pillar portion. By displaying images from an imaging means provided on the vehicle body on the display area 5202, the field of view obstructed by the pillar can be supplemented. Similarly, the display area 5203 provided on the dashboard portion can compensate for blind spots and enhance safety by displaying images from an imaging means provided on the outside of the vehicle, which is obstructed by the vehicle body. By displaying images in a way that supplements the parts that are not visible, safety checks can be performed more naturally and without discomfort.

[0467] Display area 5203 can provide various information by displaying navigation information, speed or RPM, mileage, fuel level, gear status, air conditioning settings, etc. The display items and layout can be changed as needed to suit the user's preferences. This information can also be provided in display areas 5200 to 5202. Furthermore, display areas 5200 to 5203 can also be used as lighting devices.

[0468] Figures 18(A) to 18(C) also show the foldable portable information terminal 9310. Figure 18(A) shows the portable information terminal 9310 in its unfolded state. Figure 18(B) shows the portable information terminal 9310 in an intermediate state, transitioning from either the unfolded or folded state to the other. Figure 18(C) shows the portable information terminal 9310 in its folded state. The portable information terminal 9310 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state.

[0469] The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. The display panel 9311 may also be a touch panel (input / output device) equipped with a touch sensor (input device). Furthermore, the display panel 9311 can be reversibly transformed from an unfolded state to a folded state by bending the two housings 9315 via the hinge 9313. A light-emitting device according to one aspect of the present invention can be used in the display panel 9311.

[0470] Furthermore, the configuration shown in this embodiment can be used by appropriately combining the configurations shown in Embodiments 1 to 4.

[0471] As described above, the application range of the light-emitting device equipped with the light-emitting device described in any one of Embodiments 1 to 4 is extremely broad, and this light-emitting device can be applied to electronic devices in all fields. By using the light-emitting device described in any one of Embodiments 1 to 4, it is possible to obtain electronic devices with low power consumption.

[0472] This embodiment can be appropriately combined with other embodiments shown in this specification. [Examples]

[0473] In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to Figures 19 to 30.

[0474] Figures 19(A) and 19(B) illustrate the configuration of the light-emitting device 550X.

[0475] Figure 20 illustrates the current density-luminance characteristics of a light-emitting device.

[0476] Figure 21 illustrates the brightness-current efficiency characteristics of a light-emitting device.

[0477] Figure 22 illustrates the voltage-luminance characteristics of the light-emitting device.

[0478] Figure 23 illustrates the voltage-current characteristics of the light-emitting device.

[0479] Figure 24 shows the light-emitting device at 1000 cd / m². 2 This diagram illustrates the emission spectrum when the light source is emitted at a specific brightness level.

[0480] Figure 25 shows a constant current density (50 mA / cm²). 2 This figure illustrates the change over time in the normalized brightness of a light-emitting device when it is emitted using ).

[0481] Figure 26 illustrates the current density-luminance characteristics of the light-emitting device 3.

[0482] Figure 27 illustrates the luminance-current efficiency characteristics of the light-emitting device 3.

[0483] Figure 28 illustrates the voltage-luminance characteristics of the light-emitting device 3.

[0484] Figure 29 illustrates the voltage-current characteristics of the light-emitting device 3.

[0485] Figure 30 shows the light-emitting device 3 at 1000 cd / m². 2 This diagram illustrates the emission spectrum when the light source is emitted at a specific brightness level.

[0486] <Light-emitting device 1, Light-emitting device 2> The light-emitting devices 1 and 2 fabricated in this embodiment have the same configuration as the light-emitting device 550X (see Figure 19(A)).

[0487] The light-emitting device 550X includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, and an intermediate layer 106X.

[0488] Unit 103X is sandwiched between electrodes 552X and 551X, and unit 103X contains a first luminescent material EM1. Unit 103X2 is sandwiched between electrodes 552X and unit 103X, and unit 103X2 contains a second luminescent material EM2.

[0489] The intermediate layer 106X is sandwiched between units 103X2 and 103X, and the intermediate layer 106X comprises layers 106X1 and 106X2, with layer 106X1 sandwiched between units 103X2 and 106X2.

[0490] Layer 106X1 contains an organic compound or transition metal oxide containing a halogen group or a cyano group.

[0491] Layer 106X2 contains a first organic compound AM2, a second organic compound DM, and a third organic compound BM. The first organic compound AM2 has a lowest unoccupied orbital level in the range of -3.5 eV to -2.0 eV, the second organic compound DM has a highest occupied orbital level in the range of -5.0 eV to -4.0 eV, and the third organic compound BM has an acid dissociation constant pKa of 1 to 30.

[0492] Configuration of Light-Emitting Device 1 Table 1 shows the configuration of the light-emitting device 1. The structural formulas of the materials used in the light-emitting device described in this embodiment are shown below. In the table of this embodiment, subscripts and superscripts are written in standard size for convenience. For example, subscripts used in abbreviations and superscripts used in units are written in standard size in the table. These descriptions in the table can be interpreted with reference to the description in the specification.

[0493] [Table 1]

[0494] [ka]

[0495] [ka]

[0496] 《Method for fabricating light-emitting device 1》 The light-emitting device 1 described in this embodiment was fabricated using a method comprising the following steps.

[0497] [Step 1] In the first step, a reflective film REPX was formed. Specifically, it was formed by sputtering using silver (abbreviated as Ag) as the target.

[0498] The reflective film REPX contains silver (Ag) and has a thickness of 100 nm.

[0499] [Step 2] In the second step, electrode 551X was formed on the reflective film REPX. Specifically, it was formed by sputtering using indium tin oxide (ITSO) containing silicon or silicon oxide as the target.

[0500] The electrode 551X contains ITSO and has a thickness of 10 nm and 4 mm 2 It has an area of ​​(2mm x 2mm).

[0501] Next, the substrate on which the electrode 551X was formed was washed with water, fired at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds. -4 The substrate was introduced into a vacuum deposition apparatus where the internal pressure was reduced to approximately Pa, and vacuum firing was performed at 170°C for 30 minutes in the heating chamber within the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.

[0502] [Step 3] In the third step, layer 104X was formed on electrode 551X. Specifically, the material was co-deposited using resistance heating.

[0503] Layer 104X contains N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBBiF) and an electron-accepting material (abbreviated as OCHD-003) in a weight ratio of PCBBiF:OCHD-003 = 1:0.04, and has a thickness of 10 nm. OCHD-003 contains fluorine and has a molecular weight of 672.

[0504] [Step 4] In the fourth step, layer 112X1 was formed on layer 104X. Specifically, the material was deposited using the resistance heating method.

[0505] Layer 112X1 contains PCBBiF and has a thickness of 35nm.

[0506] [Step 5] In the fifth step, layer 111X was formed on layer 112X1. Specifically, the material was co-deposited using the resistance heating method.

[0507] Layer 111X contains 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofloo[3,2-d]pyrimidine (abbreviated as 4,8mDBtP2Bfpm), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as βNCCP), and [2-d3-methyl-(2-pyridinyl-κN)benzofloo[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)) in a weight ratio of 4,8mDBtP2Bfpm:βNCCP:Ir(ppy)2(mbfpypy-d3) = 0.5:0.5:0.1 and has a thickness of 40 nm.

[0508] [Step 6] In the sixth step, layer 113X11 was formed on layer 111X. Specifically, the material was deposited using the resistance heating method.

[0509] Layer 113X11 contains 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) and has a thickness of 10 nm.

[0510] [Step 7] In the seventh step, layer 113X12 was formed on layer 113X11. Specifically, the material was deposited using the resistance heating method.

[0511] Furthermore, layer 113X12 contains 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 10 nm.

[0512] [Step 8] In the eighth step, layer 106X21 was formed on layer 113X12. Specifically, the material was deposited using the resistance heating method.

[0513] Layer 106X21 contains 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviated as Pyrrd-Phen) and has a thickness of 1 nm. Pyrrd-Phen is also basic.

[0514] [Step 9] In the ninth step, layer 106X22 was formed on layer 106X21. Specifically, the material was co-deposited using the resistance heating method.

[0515] Layer 106X22 contains NBPhen and 4-(1,3-dimethyl-2,3-dihydro-1H-benzimidazole-2-yl)-N,N-diphenylaniline (abbreviated as TPABzi) in a weight ratio of NBPhen:TPABzi = 0.9:0.1 and has a thickness of 10 nm. NBPhen is electron-accepting and has its lowest unoccupied orbital (LUMO) level at -2.83 eV. TPABzi is electron-donating and has its highest occupied orbital (HOMO) level at -4.85 eV.

[0516] [Step 10] In the tenth step, layer 106X3 was formed on layer 106X22. Specifically, the material was deposited using the resistance heating method.

[0517] Furthermore, layer 106X3 contains CuPc and has a thickness of 2nm.

[0518] [Step 11] In the 11th step, layer 106X1 was formed on layer 106X3. Specifically, the material was co-deposited using the resistance heating method.

[0519] Layer 106X1 contains PCBBiF and OCHD-003 in a weight ratio of PCBBiF:OCHD-003 = 1:0.15 and has a thickness of 10 nm.

[0520] [Step 12] In the twelfth step, layer 112X2 was formed on layer 106X1. Specifically, the material was deposited using the resistance heating method.

[0521] Layer 112X2 contains PCBBiF and has a thickness of 40nm.

[0522] [Step 13] In the 13th step, layer 111X2 was formed on layer 112X2. Specifically, the material was co-deposited using the resistance heating method.

[0523] Layer 111X2 contains 4,8mDBtP2Bfpm, βNCCP, and Ir(ppy)2(mbfpypy-d3) in a weight ratio of 4,8mDBtP2Bfpm:βNCCP:Ir(ppy)2(mbfpypy-d3) = 0.5:0.5:0.1 and has a thickness of 40 nm.

[0524] [Step 14] In the 14th step, layer 113X21 was formed on layer 111X2. Specifically, the material was deposited using the resistance heating method.

[0525] Layer 113X21 contains 2mPCCzPDBq and has a thickness of 10nm.

[0526] [Step 15] In the 15th step, layer 113X22 was formed on layer 113X21. Specifically, the material was deposited using the resistance heating method.

[0527] Furthermore, layer 113X22 contains NBPhen and has a thickness of 20nm.

[0528] [Step 16] In the 16th step, layer 105X was formed on layer 113X22. Specifically, the material was deposited using the resistance heating method.

[0529] Layer 105X contains lithium fluoride (abbreviated as LiF) and has a thickness of 1 nm.

[0530] [Step 17] In step 17, electrode 552X was formed on layer 105X. Specifically, the material was co-deposited using resistance heating.

[0531] The electrode 552X contains Ag and magnesium (abbreviated as Mg) in an Ag:Mg ratio of 10:1 (by volume) and has a thickness of 15 nm.

[0532] [Step 18] In step 18, a layer CAPX was formed on electrode 552X. Specifically, the material was deposited using a resistance heating method.

[0533] The CAPX layer contains 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) and has a thickness of 70 nm.

[0534] Operating characteristics of the light-emitting device 1 When power was supplied, the light-emitting device 1 emitted light ELX1 (see Figure 19(A)). The operating characteristics of the light-emitting device 1 were measured at room temperature (see Figures 20 to 24). A spectroradiometer (Topcon SR-UL1R) was used to measure luminance, CIE chromaticity, and emission spectrum.

[0535] The fabricated light-emitting device has a brightness of 1000 cd / m². 2 Table 2 shows the main initial characteristics when the light-emitting device is activated at a certain current density (50 mA / cm²). 2 Table 3 shows the normalized brightness after 50 hours of illumination. The characteristics of other light-emitting devices, whose configuration will be described later, are also shown in Tables 2 and 3.

[0536] [Table 2]

[0537] [Table 3]

[0538] Light-emitting devices 1 and 2 were found to exhibit good characteristics. For example, in light-emitting device 1, layer 106X21 is in contact with layer 106X22, layer 106X21 contains Pyrrd-Phen, and layer 106X22 contains NBPhen and TPABzi. Similarly, in light-emitting device 2, layer 106X21 is in contact with layer 106X22, layer 106X21 contains NBPhen and TPABzi, and layer 106X22 contains Pyrrd-Phen. In this case, the interaction between Pyrrd-Phen and TPABzi improves electron-donating to NBPhen, making charge separation easier in layer 106X2 where layers 106X21 and 106X22 are stacked. As a result, light-emitting devices 1 and 2 showed higher current efficiency compared to the comparison device. Furthermore, light-emitting device 2 reduced the driving voltage compared to the comparison device. Furthermore, after 50 hours, the normalized brightness of light-emitting device 1 remained at 99% of its initial brightness, and the brightness of light-emitting device 2 remained at 98% of its initial brightness. The brightness of the comparison device increased significantly to 133% of its initial brightness, indicating it was an unstable element.

[0539] Configuration of Light-Emitting Device 2 Table 4 shows the configuration of light-emitting device 2. Note that light-emitting device 2 differs from light-emitting device 1 in that it uses NBPhen and TPABzi instead of Pyrrd-Phen in layer 106X21, and uses Pyrrd-Phen instead of NBPhen and TPABzi in layer 106X22.

[0540] [Table 4]

[0541] 《Method for fabricating light-emitting device 2》 The light-emitting device 2 described in this embodiment was fabricated using a method comprising the following steps.

[0542] The method for fabricating light-emitting device 2 differs from the method for fabricating light-emitting device 1 in that, in step 8, NBPhen and TPABzi are co-deposited instead of Pyrrd-Phen, and in step 9, Pyrrd-Phen is deposited instead of NBPhen and TPABzi. Here, the differences will be explained in detail, and the parts using the same method will refer to the explanation above.

[0543] [Step 8] In the eighth step, layer 106X21 was formed on layer 113X12. Specifically, the material was deposited using the resistance heating method.

[0544] The 106X21 layer contains NBPhen and TPABzi in a weight ratio of NBPhen:TPABzi = 0.9:0.1 and has a thickness of 10 nm.

[0545] [Step 9] In the ninth step, layer 106X22 was formed on layer 106X21. Specifically, the material was co-deposited using the resistance heating method.

[0546] The 106X22 layer contains 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviated as Pyrrd-Phen) and has a thickness of 1 nm.

[0547] Operating characteristics of the light-emitting device 2 When power was supplied, the light-emitting device 2 emitted light ELX1 and light ELX2 (see Figure 19(A)). The operating characteristics of the light-emitting device 2 were measured at room temperature (see Figures 20 to 24).

[0548] <Light-emitting device 3> The light-emitting device 3 described in this embodiment has the same configuration as the light-emitting device 550X (see Figure 19(B)).

[0549] The light-emitting device 550X includes an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, and an intermediate layer 106X.

[0550] Unit 103X is sandwiched between electrodes 552X and 551X, and unit 103X contains a first luminescent material EM1. Unit 103X2 is sandwiched between electrodes 552X and unit 103X, and unit 103X2 contains a second luminescent material EM2.

[0551] The intermediate layer 106X is sandwiched between units 103X2 and 103X, and the intermediate layer 106X comprises layers 106X1 and 106X2, with layer 106X1 sandwiched between units 103X2 and 106X2.

[0552] Layer 106X1 contains an organic compound or transition metal oxide containing a halogen group or a cyano group.

[0553] Layer 106X2 contains a first organic compound AM2, a second organic compound DM, and a third organic compound BM. The first organic compound AM2 has a lowest unoccupied orbital level in the range of -3.5 eV to -2.0 eV, the second organic compound DM has a highest occupied orbital level in the range of -5.0 eV to -4.0 eV, and the third organic compound BM has an acid dissociation constant pKa of 1 to 30.

[0554] Configuration of Light-Emitting Device 3 Table 5 shows the configuration of the light-emitting device 3. The structural formulas of the materials used in the light-emitting device described in this embodiment are shown below. Note that light-emitting device 3 differs from light-emitting device 1 in that layer 112X1 has a thickness of 30 nm instead of 35 nm, layer 113X12 contains 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) instead of NBPhen, layer 106X2 is provided between layers 106X3 and 113X12 instead of layers 106X21 and 106X22, layer 113X21 has a thickness of 20 nm instead of 10 nm, layer 113X22 contains mPPhen2P instead of NBPhen, and layer 105X contains LiF and ytterbium (abbreviated as Yb) instead of LiF.

[0555] [Table 5]

[0556] [ka]

[0557] 《Method for fabricating light-emitting device 3》 The light-emitting device 3 described in this embodiment was fabricated using a method comprising the following steps.

[0558] The method for fabricating light-emitting device 3 differs from the method for fabricating light-emitting device 1 in the following ways: in step 4, the thickness of layer 112X1 is changed from 35nm to 30nm by deposition; in step 7, mPPhen2P is deposited instead of NBPhen; after forming layer 113X12 in step 7, step 8 is skipped, and in step 9, layer 106X2 is formed on layer 113X12; in step 14, the thickness of layer 113X21 is changed from 10nm to 20nm by deposition; in step 15, mPPhen2P is deposited instead of NBPhen; and in step 16, Yb and LiF are co-deposited at a thickness of 2nm instead of LiF. Here, the differences will be explained in detail, and the above explanation will be used as a reference for parts that use the same method.

[0559] [Step 4] In the fourth step, layer 112X1 was formed on layer 104X. Specifically, the material was deposited using the resistance heating method.

[0560] Layer 112X1 contains PCBBiF and has a thickness of 30nm.

[0561] [Step 7] In the seventh step, layer 113X12 was formed on layer 113X11. Specifically, the material was deposited using the resistance heating method.

[0562] Furthermore, layer 113X12 contains mPPhen2P and has a thickness of 10 nm.

[0563] [Step 9] In the ninth step, layer 106X2 was formed on layer 113X12. Specifically, the material was deposited using the resistance heating method.

[0564] Layer 106X2 contains mPPhen2P, 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviated as hpp2Py), and TPABzi in a weight ratio of mPPhen2P:hpp2Py:TPABzi = 0.45:0.45:0.2, and has a thickness of 10 nm. Furthermore, hpp2Py is basic.

[0565] [Step 14] In the 14th step, layer 113X21 was formed on layer 111X2. Specifically, the material was deposited using the resistance heating method.

[0566] Furthermore, layer 113X21 contains 2mPCCzPDBq and has a thickness of 20nm.

[0567] [Step 15] In the 15th step, layer 113X22 was formed on layer 113X21. Specifically, the material was deposited using the resistance heating method.

[0568] Layer 113X22 contains mPPhen2P and has a thickness of 20nm.

[0569] [Step 16] In the 16th step, layer 105X was formed on layer 113X22. Specifically, the material was deposited using the resistance heating method.

[0570] Layer 105X contains Yb and LiF in a Yb:LiF = 1:1 (volume ratio) and has a thickness of 2 nm.

[0571] Operating characteristics of the light-emitting device 3 When power was supplied, the light-emitting device 3 emitted light ELX1 and light ELX2 (see Figure 19(B)). The operating characteristics of the light-emitting device 3 were measured at room temperature (see Figures 26 to 30).

[0572] The fabricated light-emitting device has a brightness of 1000 cd / m². 2 Table 6 shows the main initial characteristics when the light is emitted at a certain level.

[0573] [Table 6]

[0574] The light-emitting device 3 was found to exhibit good characteristics. For example, in the light-emitting device 3, layer 106X2 contains mPPhen2P, hpp2Py, and TPABzi. Furthermore, mPPhen2P is electron-accepting, hpp2Py is basic, and TPABzi is electron-donating. As a result, the light-emitting device 3 showed high current efficiency.

[0575] (Reference example) The comparative device fabricated in this example has the same configuration as the light-emitting device 550X (see Figure 19(B)).

[0576] 《Configuration of the comparison device》 Table 7 shows the configuration of the comparison device. Note that the comparison device differs from light-emitting device 1 and light-emitting device 2 in that it has a layer 106X2 between layers 106X3 and 113X12, instead of layers 106X21 and 106X22.

[0577] [Table 7]

[0578] 《Method for fabricating comparative devices》 The comparative device described in this reference example was fabricated using a method comprising the following steps.

[0579] Note that the fabrication method for the comparative device differs from that of the light-emitting device 1 in that, after forming layer 113X12 in step 7, step 8 is skipped, and layer 106X2 is formed on layer 113X12 in step 9. Here, the differences will be explained in detail, and the parts using the same method will refer to the explanation above.

[0580] [Step 9] In the ninth step, layer 106X2 was formed on layer 113X12. Specifically, the material was co-deposited using the resistance heating method.

[0581] Layer 106X2 contains NBPhen and TPABzi in a weight ratio of NBPhen:TPABzi = 0.9:0.1 and has a thickness of 10 nm.

[0582] 《Operating characteristics of the comparison device》 When power was supplied, the comparison device emitted optical ELX1 and optical ELX2 (see Figure 19(B)). The operating characteristics of the comparison device were measured at room temperature (see Figures 20 to 24). [Explanation of Symbols]

[0583] 103X Unit 103X2 Unit 103Y Unit 103Y2 Unit 104X layer 104Y layer 105X layer 105X1 layer 105X2 layers 105Y layer 105Y1 layer 105Y2 layer 106X middle layer 106X1 layer 106X2 layers 106X21 layers 106X22 layers 106X3 layers 106XY1 area 106XY2 area 106Y middle class 106Y1 layer 106Y2 layer 106Y21 layer 106Y22 layer 106Y3 layer 111X layer 111X2 layers 111Y layer 111Y2 layer 112X layer 112X2 layers 112Y layer 112Y2 layer 113X layer 113X2 layers 113Y layer 113Y2 layer 400 circuit boards 401 First electrode 403 EL layer 404 Second electrode 405 sealant 406 Sealant 407 Sealing substrate 412 pads 420 IC chips 510 circuit board 520 Functional Layers 521 Insulating film 528 Insulating film 528_1 Insulating film 528_2 Insulating film 528_3 Insulating film 550X Light-Emitting Device 550Y Light-Emitting Device 551X electrode 551Y electrode 551XY gap 552X electrode 552Y electrode 601 Source Line Drive Circuit 602 pixel section 603 Gate wire drive circuit 604 Sealing substrate 605 Sealant 607 Space 608 Wiring 609 External input terminal 610 element substrate 611 Switching FET 612 Current-Controlled FET 613 First electrode 614 Insulators 616 EL layer 617 Second electrode 618 Light-emitting devices 623 FET 951 circuit board 952 Electrode 953 Insulating layer 954 Partition layer 955 EL layer 956 Electrode 1001 circuit board 1002 Underlying insulating film 1003 Gate Insulator 10:06 Guard Station 1007 🙏 1008 Gate 1020 First interlayer insulating film 1021 Second interlayer insulating film 1022 electrode 1024B Electrode 1024G electrode 1024R electrode 1024W electrode 1025 Bulkhead 1028 EL layer 1029 Electrode 1031 Sealing substrate 1032 Sealant 1033 Base material 1034B Colored layer 1034G colored layer 1034R colored layer 1035 Black Matrix 1036 Overcoat layer 1037 Third interlayer insulating film 1040 pixel section 1041 Drive circuit section 1042 Peripheral area 2001 cabinet 2002 light source 2100 Robots 2102 Microphone 2103 Top camera 2104 Speaker 2105 Display 2106 Lower Camera 2107 Obstacle Sensor 2108 Moving mechanism 2110 Arithmetic equipment 3001 Lighting device 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5006 Connection terminal 5007 Sensor 5008 Microphone 5012 Support part 5013 Earphones 5100 Cleaning Robot 5101 Display 5102 Camera 5103 Brush 5104 Operation Buttons 5120 Garbage 5140 Portable electronic devices 5200 display area 5201 Display area 5202 Display area 5203 Display area 7101 enclosure 7103 Display section 7105 Stand 7107 Display section 7109 Operation Keys 7110 Remote Control Unit 7201 Main Unit 7202 enclosure 7203 Display section 7204 Keyboard 7205 External connection port 7206 Pointing device 7210 Second display unit 7401 enclosure 7402 Display section 7403 Operation Buttons 7404 External connection port 7405 Speaker 7406 Microphone 9310 Mobile Information Terminal 9311 Display Panel 9313 Hinge 9315 enclosure

Claims

1. a first electrode; a second electrode; and A first unit; A second unit; a first intermediate layer; the first unit is sandwiched between the second electrode and the first electrode; the first unit includes a first luminescent material EM1; the second unit is sandwiched between the second electrode and the first unit; the second unit includes a second luminescent material EM2; the first intermediate layer is sandwiched between the second unit and the first unit; the first intermediate layer comprises a first layer and a second layer; the first layer is sandwiched between the second unit and the second layer; the first layer contains an organic compound containing a halogen group or a cyano group or a transition metal oxide; the second layer includes a first organic compound AM2, a second organic compound DM, and a third organic compound BM; the first organic compound AM2 has a lowest unoccupied molecular orbital level in the range of −3.5 eV to −2.0 eV, the second organic compound DM has a highest occupied molecular orbital level in the range of −5.0 eV to −4.0 eV, a light-emitting device, wherein the third organic compound BM has an acid dissociation constant pKa of 1 or more and 30 or less;

2. a first electrode; a second electrode; and A first unit; A second unit; a first intermediate layer; the first unit is sandwiched between the second electrode and the first electrode; the first unit includes a first luminescent material EM1; the second unit is sandwiched between the second electrode and the first unit; the second unit includes a second luminescent material EM2; the first intermediate layer is sandwiched between the second unit and the first unit; the first intermediate layer comprises a first layer and a second layer; the first layer is sandwiched between the second unit and the second layer; the first layer contains an organic compound containing a halogen group or a cyano group or a transition metal oxide; the second layer includes a first organic compound AM2, a second organic compound DM, and a third organic compound BM; the first organic compound AM2 has a lowest unoccupied molecular orbital level in the range of −3.5 eV to −2.0 eV, the second organic compound DM has a highest occupied molecular orbital level in the range of −5.0 eV to −4.0 eV, A light-emitting device, wherein the third organic compound BM has a structure represented by general formula (G0). 【Chemistry 1】 (In the above general formula (G0), Ar represents a substituted or unsubstituted nitrogen-containing heteroaryl group; R １ and R ２ each independently represents a substituted or unsubstituted alkyl group having from 1 to 12 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to 12 carbon atoms, or a substituted or unsubstituted aliphatic amine having from 1 to 12 carbon atoms, R １ and R ２ may be bonded to each other to form a heterocycle.)

3. In claim 2, A light-emitting device, wherein the third organic compound BM has a structure represented by general formula (G0). 【Chemistry 2】 (In the above general formula (G0), Ar has a phenanthroline skeleton or a pyridine skeleton.

4. In claim 2, A light-emitting device, wherein the third organic compound BM has a structure represented by general formula (G0). 【Transformation 3】 (In the above general formula (G0), R １ and R ２ are bonded to each other to form a pyrrolidine skeleton, a piperidine skeleton, or a hexahydropyrimidopyrimidine group.

5. In claim 1 or claim 2, A light-emitting device, wherein the second organic compound DM comprises a dihydroimidazole group or a tetrahydroimidazole group.

6. In claim 1 or claim 2, the second layer comprises a third layer and a fourth layer; the fourth layer is sandwiched between the first layer and the third layer; the third layer includes the first organic compound AM2 and the second organic compound DM, The fourth layer comprises the third organic compound BM.

7. In claim 1 or claim 2, the second layer comprises a third layer and a fourth layer; the fourth layer is sandwiched between the first layer and the third layer; the third layer includes the third organic compound BM, The fourth layer comprises the first organic compound AM2 and the second organic compound DM.

8. In claim 1 or claim 2, the first layer comprises a fifth layer; the fifth layer is sandwiched between the first layer and the second layer; The fifth layer comprises an electron-transporting material.

9. A display device comprising the light-emitting device according to claim 1 or 2, and at least one of a transistor and a substrate.

10. An electronic device comprising the display device according to claim 9 and at least one of a sensor, an operation button, a speaker, and a microphone.

11. A light-emitting apparatus comprising the light-emitting device according to claim 1 or 2, and at least one of a transistor and a substrate.

12. A lighting device having a light-emitting device according to claim 1 or claim 2 and a housing.

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