Organic compound, light-emitting device, light-emitting apparatus, and electronic equipment

Abstract

To provide an organic compound having an electron-injection property and low solubility in water.SOLUTION: A compound represented by the general formula (G1) in the figure is provided. In the formula, Ar represents an aromatic hydrocarbon group or a heteroaromatic hydrocarbon group; each of R1 and R2 independently represents hydrogen (including deuterium), an alkyl group, an amino group, an aryl group, or a heteroaryl group; n represents an integer from 1 to 6; and L is a group represented by the general formula (L-1). In the formula (L-1), each of R3 and R4 independently represents hydrogen (including deuterium) or an alkyl group; and k is an integer from 1 to 5. When k is greater than or equal to 2, R3's may be the same as or different from each other and R4's may be the same as or different from each other.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to an organic compound, a light-emitting device, a light-emitting apparatus, a light-receiving and light-emitting device, a display device, an electronic device, a lighting device, and an electronic device. Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification or the like relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, an imaging device, a driving method thereof, or a manufacturing method thereof.

Background Art

[0002] In recent years, display devices are expected to be applied to various uses. For example, as applications of large display devices, there are home television sets (also referred to as TVs or television receivers), digital signage, and PIDs (Public Information Displays), etc. In addition, as portable information terminals, the development of smartphones and tablet terminals equipped with touch panels is underway.

[0003] In addition, higher definition of display devices is required. As devices that require high-definition display devices, for example, devices for virtual reality (VR: Virtual Reality), augmented reality (AR: Augmented Reality), substitutional reality (SR: Substitutional Reality), and mixed reality (MR: Mixed Reality) are actively being developed.

[0004] As a display device, for example, a light-emitting device (also called a light-emitting element) has been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices.

[0005] Patent Document 1 discloses a display device for VR using an organic EL device (also called an organic EL element). Patent Document 2 discloses a light-emitting device with low driving voltage and good reliability that uses a mixed film of a transition metal and an organic compound having lone pairs of electrons as the electron injection layer. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] International Publication No. 2018 / 087625 [Patent Document 2] Japanese Patent Publication No. 2018-201012 [Overview of the project] [Problems that the invention aims to solve]

[0007] Vacuum deposition using a metal mask (mask deposition) is widely used as one method for fabricating organic semiconductor films into predetermined shapes. However, with the increasing demand for higher density and resolution, mask deposition is approaching its limits in terms of resolution due to various reasons, such as alignment accuracy and spacing issues with the substrate. On the other hand, by processing the shape of the organic semiconductor film using lithography, it is possible to form more intricate patterns. Furthermore, since this method can easily be scaled up to large areas, research on processing organic semiconductor films using lithography is also progressing.

[0008] Organic EL devices have an organic compound layer containing a light-emitting material (corresponding to the organic semiconductor film mentioned above) between electrodes (between the first electrode and the second electrode), and light emission is obtained by the energy generated when carriers (holes and electrons) injected from the electrodes into the organic compound layer are recombined.

[0009] In this case, the organic compound layer is an inhospitable and high-energy barrier, so a high voltage was generally required for carrier injection, especially electron injection. Therefore, currently, alkali metals such as lithium (Li) or compounds of such alkali metals, which have a low work function, are used in the electron injection layer in contact with the cathode, thereby achieving lower voltages.

[0010] However, when fabricating light-emitting devices having an organic semiconductor layer containing the alkali metal or alkali metal compound described above using the lithography method described above, there was a problem in that the influence of oxygen or water in the atmosphere, or chemicals or water used in the process, caused a significant increase in the driving voltage or a drastic decrease in current efficiency.

[0011] One way to solve this problem is to perform a lithography process during the formation of the organic compound layer of the light-emitting device (before forming the layer containing alkali metals or alkali metal compounds). In other words, by performing lithography to process the organic compound layer before forming the electron injection layer, and then carrying out the electron injection layer formation process and subsequent processes, it is possible to avoid deterioration of properties.

[0012] However, the above avoidance methods could not be applied to tandem-type light-emitting devices, and a significant deterioration in properties due to the process of processing the organic compound layer using lithography could not be avoided.

[0013] This is because tandem light-emitting devices have an organic semiconductor layer with a structure in which multiple light-emitting layers are stacked in series with an intermediate layer in between, and this intermediate layer contains an alkali metal or alkali metal compound in order to inject electrons into the anode-side light-emitting layer. Since the intermediate layer is located between the two light-emitting layers, if the organic compound layer containing the two light-emitting layers is to be processed using lithography, the intermediate layer will also inevitably be processed using lithography and will be exposed to oxygen, water, etc.

[0014] Therefore, processing the intermediate layer containing alkali metals or alkali metal compounds using lithography resulted in a significant increase in the driving voltage of the light-emitting device and a drastic decrease in current efficiency, similar to the case where the electron injection layer was processed using lithography.

[0015] Another means of solving the above-mentioned problems is to use an electron-injection-possessing organic compound in the electron injection layer or intermediate layer instead of an alkali metal or alkali metal compound. In other words, in this method, an organic compound layer that does not contain alkali metals or alkali metal compounds is processed by lithography, so deterioration of the characteristics of the light-emitting device caused by alkali metals or alkali metal compounds can be avoided.

[0016] However, if the organic compound has high solubility in water, the layer containing the organic compound may dissolve during processes where it is exposed to water or a water-based chemical solution, which can lead to a decrease in properties, shape defects, and other problems.

[0017] Furthermore, one aspect of the present invention aims to provide an organic compound having electron injection properties. Furthermore, one aspect of the present invention aims to provide an organic compound with low solubility in water. Furthermore, one aspect of the present invention aims to provide a light-emitting device with good properties. Furthermore, one aspect of the present invention aims to provide a novel organic compound, a novel light-emitting device, a novel light-emitting apparatus, or a novel electronic device.

[0018] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0019] In one aspect of the present invention, to solve the above-mentioned problems, an organic compound having a cyclic guanidine skeleton and an aromatic hydrocarbon skeleton or a heteroaromatic hydrocarbon skeleton is provided. Such an organic compound has electron-injection properties and can be used in place of alkali metals or alkali metal compounds in the electron-injection layer or intermediate layer. Preferably, the cyclic guanidine skeleton contains an imidazole ring. By using a cyclic guanidine skeleton containing an imidazole ring, solubility in water is low, and the dissolution of the layer during the lithography processing step can be avoided. Therefore, by using the organic compound of one aspect of the present invention in place of alkali metals or alkali metal compounds in the electron-injection layer or intermediate layer, deterioration of properties caused by alkali metals or alkali metal compounds can be avoided, and a light-emitting device with good properties can be obtained.

[0020] In other words, one aspect of the present invention is an organic compound represented by the following general formula (G1).

[0021] [ka]

[0022] However, in the organic compound represented by the above general formula (G1), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, and R 1 and R 2Each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted amino group, an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, or a heteroaryl group having 2 to 13 carbon atoms forming a substituted or unsubstituted ring, n represents an integer of 1 to 6, and L is a group represented by the above general formula (L-1). Further, in the above general formula (L-1), R 3 and R 4 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, k represents an integer of 1 to 5, and when k is 2 or more, each R 3 and R 4 may be the same or different.

[0023] Also, one aspect of the present invention is an organic compound represented by any one of the following general formulas (G2-1) to (G2-3).

[0024]

Chemical formula

[0025] However, in the organic compounds represented by the above general formulas (G2-1) to (G2-3), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, R 1 , R 2 and R 11 to R 28 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, and n represents an integer of 1 to 6.

[0026] Also, one aspect of the present invention is an organic compound in which, in each of the above configurations, the aromatic hydrocarbon group having 6 to 30 carbon atoms forming a ring and the heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a ring are groups having a structure in which n hydrogen atoms are removed from any one ring of an aromatic hydrocarbon and a heteroaromatic hydrocarbon represented by any one of the following structural formulas (Ar-1) to (Ar-27).

[0027] [ka]

[0028] Furthermore, one aspect of the present invention is an organic compound represented by the following structural formulas (100), (101), or (113).

[0029] [ka]

[0030] Furthermore, one aspect of the present invention is a light-emitting device using organic compounds having the above-described configurations.

[0031] Furthermore, one aspect of the present invention is a light-emitting device having the above-described light-emitting device and a transistor or a substrate.

[0032] Furthermore, one aspect of the present invention is an electronic device having the above-described light-emitting device and a detection unit, an input unit, or a communication unit.

[0033] In this specification, the term "light-emitting device" includes image display devices that use light-emitting devices. Furthermore, modules in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to a light-emitting device on a substrate, modules in which a printed circuit board is provided at the end of the TCP, or modules in which an IC (integrated circuit) is directly mounted to the light-emitting device using the COG (Chip On Glass) method may also be included as light-emitting devices. Additionally, lighting fixtures and the like may have light-emitting devices. [Effects of the Invention]

[0034] According to one aspect of the present invention, an organic compound having electron injection properties can be provided. Furthermore, according to one aspect of the present invention, an organic compound with low solubility in water can be provided. Furthermore, according to one aspect of the present invention, a light-emitting device with good properties can be provided. Furthermore, according to one aspect of the present invention, a novel organic compound or a novel light-emitting device can be provided.

[0035] According to one aspect of the present invention, a light-emitting device with high display quality can be provided. Alternatively, according to one aspect of the present invention, a high-definition light-emitting device can be provided. Alternatively, according to one aspect of the present invention, a high-resolution light-emitting device can be provided. Alternatively, according to one aspect of the present invention, a highly reliable light-emitting device can be provided. Alternatively, according to one aspect of the present invention, a novel light-emitting device with excellent convenience, usefulness, or reliability can be provided. Alternatively, according to one aspect of the present invention, a novel display module with excellent convenience, usefulness, or reliability can be provided. Alternatively, according to one aspect of the present invention, a novel electronic device with excellent convenience, usefulness, or reliability can be provided. Alternatively, according to one aspect of the present invention, a novel light-emitting device, a novel display module, a novel electronic device, or a novel semiconductor device can be provided.

[0036] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0037] [Figure 1] Figures 1(A) through 1(C) are diagrams illustrating light-emitting devices. [Figure 2] Figure 2 is a diagram illustrating a light-emitting device. [Figure 3] Figures 3(A) and 3(B) are a top view and a cross-sectional view of the light-emitting device. [Figure 4] Figures 4(A) through 4(D) are diagrams illustrating light-emitting devices. [Figure 5] Figures 5(A) to 5(E) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 6] Figures 6(A) to 6(D) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 7] Figures 7(A) to 7(D) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 8] Figures 8(A) to 8(C) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 9] Figures 9(A) to 9(C) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 10] Figures 10(A) to 10(C) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 11] Figures 11(A) and 11(B) are perspective views showing examples of the display module configuration. [Figure 12] Figures 12(A) and 12(B) are cross-sectional views showing examples of the configuration of a display device. [Figure 13] Figures 13(A) to 13(D) show examples of electronic devices. [Figure 14] Figures 14(A) to 14(F) show examples of electronic devices. [Figure 15] Figures 15(A) to 15(C) show the 1H NMR spectra of 2,6tip2Py. [Figure 16] Figure 16 shows the absorption and emission spectra of a toluene solution of 2,6tip2Py. [Figure 17] Figures 17(A) to 17(C) show the 1H NMR spectra of 2,7tip2SF. [Figure 18] Figure 18 shows the absorption and emission spectra of a toluene solution containing 2,7tip2SF. [Figure 19] Figure 19 shows the luminance-current density characteristics of the light-emitting device 1. [Figure 20] Figure 20 shows the current efficiency-luminance characteristics of the light-emitting device 1. [Figure 21]Figure 21 shows the luminance-voltage characteristics of the light-emitting device 1. [Figure 22] Figure 22 shows the current-voltage characteristics of the light-emitting device 1. [Figure 23] Figure 23 shows the electroluminescence spectrum of light-emitting device 1. [Figure 24] Figure 24 shows the luminance-current density characteristics of the light-emitting device 2. [Figure 25] Figure 25 shows the current efficiency-luminance characteristics of the light-emitting device 2. [Figure 26] Figure 26 shows the luminance-voltage characteristics of the light-emitting device 2. [Figure 27] Figure 27 shows the current-voltage characteristics of the light-emitting device 2. [Figure 28] Figure 28 shows the field emission spectrum of light-emitting device 2. [Figure 29] Figure 29 shows the change in brightness of the light-emitting device 2 with respect to its operating time. [Figure 30] Figure 30 shows the brightness-current density characteristics of the light-emitting device 3. [Figure 31] Figure 31 shows the current efficiency-luminance characteristics of the light-emitting device 3. [Figure 32] Figure 32 shows the brightness-voltage characteristics of the light-emitting device 3. [Figure 33] Figure 33 shows the current-voltage characteristics of the light-emitting device 3. [Figure 34] Figure 34 shows the electroluminescence spectrum of the light-emitting device 3. [Figure 35] Figure 35 shows the luminance-current density characteristics of the light-emitting device 4. [Figure 36] Figure 36 shows the current efficiency-luminance characteristics of the light-emitting device 4. [Figure 37] Figure 37 shows the luminance-voltage characteristics of the light-emitting device 4. [Figure 38] Figure 38 shows the current-voltage characteristics of the light-emitting device 4. [Figure 39] Figure 39 shows the electroluminescence spectrum of the light-emitting device 4. [Figure 40] Figure 40 shows the change in brightness of the light-emitting device 4 with respect to its operating time. [Figure 41] Figures 41(A) to 41(C) show the 1H NMR spectra of tipSF. [Figure 42] Figure 42 is a molecular structure diagram obtained by X-ray crystallography. [Modes for carrying out the invention]

[0038] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0039] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0040] Furthermore, for the sake of ease of understanding, the position, size, and scope of each component shown in the drawings may not represent their actual position, size, and scope. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0041] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0042] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0043] In this specification, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or electron injection layer may be called a "carrier injection layer," a hole transport layer or electron transport layer may be called a "carrier transport layer," and a hole block layer or electron block layer may be called a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable by their cross-sectional shape or characteristics. Furthermore, a single layer may combine the functions of two or three of these carrier injection, carrier transport, and carrier block layers.

[0044] In this specification, a light-emitting device (also called a light-emitting element) has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. In this specification, a light-receiving device (also called a photodetector) has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0045] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°. The side surface of the structure and the substrate surface do not necessarily have to be perfectly flat; they may be substantially planar with a fine curvature, or substantially planar with fine irregularities.

[0046] In this specification, the term "light-emitting device" includes image display devices using organic EL devices. Furthermore, modules in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to an organic EL device, modules in which a printed circuit board is provided at the end of the TCP, or modules in which an IC (integrated circuit) is directly mounted to an organic EL device using the COG (Chip On Glass) method may also be included as light-emitting devices. Additionally, lighting fixtures and the like may have light-emitting devices.

[0047] (Embodiment 1) This embodiment describes an organic compound according to one aspect of the present invention.

[0048] As described above, in one aspect of the present invention, an organic compound having a cyclic guanidine skeleton and an aromatic hydrocarbon skeleton or a heteroaromatic hydrocarbon skeleton is provided to solve the problem. Such an organic compound has electron-injection properties and can be used in place of alkali metals or alkali metal compounds in the electron-injection layer or intermediate layer. Preferably, the cyclic guanidine skeleton contains an imidazole ring. By using a cyclic guanidine skeleton containing an imidazole ring, solubility in water is low, and the dissolution of the layer during the lithography processing step can be avoided. Therefore, by using the organic compound of one aspect of the present invention in place of alkali metals or alkali metal compounds in the electron-injection layer or intermediate layer, deterioration of properties caused by alkali metals or alkali metal compounds can be avoided, and a light-emitting device with good properties can be obtained.

[0049] In other words, one aspect of the present invention is an organic compound represented by the following general formula (G1).

[0050] [ka]

[0051] However, in the organic compound represented by the above general formula (G1), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, and R 1 and R 2 Each of the following independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted amino group, an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, or a heteroaryl group having 2 to 13 carbon atoms forming a substituted or unsubstituted ring, n represents an integer from 1 to 6, and L is the group represented by the above general formula (L-1). Furthermore, in the above general formula (L-1), R 3 and R 4 Each of these independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, k represents an integer from 1 to 5, and when k is 2 or greater, each R 3 and R 4 They may be the same or different.

[0052] Thus, by adopting a structure with a cyclic guanidine skeleton, the organic compound can be given electron injection properties. Furthermore, the inclusion of an imidazole ring in the cyclic guanidine skeleton can reduce its solubility in water. Therefore, by using an organic compound with such a structure in the electron injection layer or intermediate layer, a light-emitting device with good properties can be obtained.

[0053] Furthermore, one aspect of the present invention is an organic compound represented by any of the following general formulas (G2-1) to (G2-3).

[0054] [ka]

[0055] However, in the organic compounds represented by the above general formulas (G2-1) to (G2-3), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, and R 1 , R 2 and R 11 ~R 28 Each of these independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, and n represents an integer from 1 to 6.

[0056] The organic compounds represented by the above general formulas (G2-1) to (G2-3) have a structure in which k in the organic compound represented by the above general formula (G1) is limited to an integer from 2 to 4. Such a structure is preferable because it can increase the stability of the cyclic guanidine skeleton, thereby increasing the overall stability of the organic compound.

[0057] In general formulas (G1) and (G2-1) to (G2-3) above, n is more preferably an integer from 1 to 4, and even more preferably 1 or 2. This reduces the solubility of the organic compound in water or a water-based solvent.

[0058] Specific examples of aromatic hydrocarbons and heteroaromatic hydrocarbons Furthermore, in the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a ring is a group having a structure obtained by removing n hydrogen atoms from an aromatic hydrocarbon having 6 to 30 carbon atoms forming a ring, and a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a ring is a group having a structure obtained by removing n hydrogen atoms from a heteroaromatic hydrocarbon having 2 to 30 carbon atoms forming a ring.

[0059] In the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), by removing n hydrogen atoms, the number of ring-forming carbon atoms can be used as aromatic hydrocarbon groups with 6 to 30 aromatic hydrocarbons. Specific examples of aromatic hydrocarbons with 6 to 30 ring-forming carbon atoms include benzene, naphthalene, fluorene, spirobifluorene, anthracene, phenanthrene, triphenylene, pyrene, tetracene, chrysene, and benz(a)anthracene. However, specific examples of aromatic hydrocarbon groups with 6 to 30 ring-forming carbon atoms are not limited to these.

[0060] In the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), by removing n hydrogen atoms, specific examples of heteroaromatic hydrocarbons having 2 to 30 carbon atoms forming a ring that can be used as heteroaromatic hydrocarbon groups having 2 to 30 carbon atoms forming a ring include pyridine, bipyridine, pyrimidine, bipyrimidine, pyrazine, bipyrazine, triazine, quinoline, isoquinoline, benzoquinoline, phenanthroline, quinoxaline, benzoquinoxaline, dibenzoquinoxaline, azafluorene, diazafluorene, carbazole, benzocarbazole Examples include dibenzocarbasol, dibenzofuran, benzonaphthofuran, dinaphthofuran, dibenzothiophene, benzonaphthothiophene, dinaphthothiophene, benzoflopyridine, benzoflopyrimidine, benzothiopyridine, benzothiopyrimidine, naphthoflopyridine, naphthothiopyrimidine, naphthothiopyrimidine, acridine, xanthene, phenothiazine, phenoxazine, phenazine, triazole, oxazole, oxadiazole, thiazole, thiadiazole, imidazole, benzimidazole, pyrazole, pyrrol, etc. However, specific examples of heteroaromatic hydrocarbons with 2 to 30 carbon atoms forming a ring are not limited to these.

[0061] In the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), by removing n hydrogen atoms, it is possible to use them as aromatic hydrocarbon groups with 6 to 30 ring-forming carbon atoms or heteroaromatic hydrocarbon groups with 2 to 30 ring-forming carbon atoms. As specific examples of aromatic hydrocarbons with 6 to 30 ring-forming carbon atoms and heteroaromatic hydrocarbons with 2 to 30 ring-forming carbon atoms, among those listed above, it is more preferable that they be one of the following structural formulas (Ar-1) to (Ar-27).

[0062] [ka]

[0063] Furthermore, it is even more preferable to use a group as Ar that has a structure obtained by removing n hydrogens from the above structural formula (Ar-5) or structural formula (Ar-20) among aromatic hydrocarbons with 6 to 30 carbon atoms forming the ring and heteroaromatic hydrocarbons with 2 to 30 carbon atoms forming the ring. By using these aromatic hydrocarbons or heteroaromatic hydrocarbons, it is possible to reduce solubility in water or water-based chemical solutions.

[0064] Furthermore, when a heteroaromatic hydrocarbon having 2 to 30 carbon atoms forming a ring contains nitrogen as one of the ring's constituent elements, it is more preferable that the nitrogen or a carbon adjacent to it is bonded to the cyclic guanidine skeleton. This enhances the electron injection properties of the organic compound.

[0065] Furthermore, when an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, has substituents, specific examples of such substituents include alkyl groups having 1 to 6 carbon atoms, aryl groups having 6 to 13 carbon atoms, and heteroaryl groups having 2 to 13 carbon atoms. In addition, some or all of the hydrogen atoms in the aromatic hydrocarbon group having 6 to 30 carbon atoms forming a ring, or the heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, may be deuterium.

[0066] Specific examples of alkyl groups with 1 to 6 carbon atoms Furthermore, in the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), specific examples of C1 to C6 alkyl groups include methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group, neopentyl group, hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, neohexyl group, 3-methylpentyl group, 2-methylpentyl group, 2-ethylbutyl group, 1,2-dimethylbutyl group, 2,3-dimethylbutyl group, and the like. Note that some or all of the hydrogen atoms in the C1 to C6 alkyl group may be deuterium.

[0067] Specific examples of substituted or unsubstituted amino groups Furthermore, in the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), specific examples of substituted or unsubstituted amino groups include -NH2, dialkylamino groups, and diarylamino groups. Specific examples of alkyl groups that can be used in dialkylamino groups include alkyl groups having 1 to 6 carbon atoms. Specific examples of aryl groups that can be used in diarylamino groups include aryl groups having 6 to 13 carbon atoms forming the ring. Some or all of the hydrogen atoms in the substituted or unsubstituted amino groups may be deuterium.

[0068] Specific examples of aryl groups with 6 to 13 carbon atoms forming the ring. Furthermore, in the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), specific examples of aryl groups having 6 to 13 carbon atoms forming a ring include phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, mesityl group, o-biphenyl group, m-biphenyl group, p-biphenyl group, 1-naphthyl group, 2-naphthyl group, and fluorenyl group. When the aryl group having 6 to 13 carbon atoms forming a ring has substituents, specific examples of such substituents include alkyl groups having 1 to 6 carbon atoms, aryl groups having 6 to 13 carbon atoms forming a ring, and heteroaryl groups having 2 to 13 carbon atoms forming a ring. Additionally, some or all of the hydrogen atoms in the aryl group having 6 to 13 carbon atoms may be deuterium.

[0069] Specific examples of heteroaryl groups with 2 to 13 carbon atoms forming the ring. Furthermore, in the organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), specific examples of heteroaryl groups having 2 to 13 carbon atoms forming a ring include imidazolyl, pyrazolyl, pyridyl, pyridazyl, triazyl, benzimidazolyl, quinolyl, carbazolyl, dibenzofuranyl, and dibenzothiophenyl groups. When the heteroaryl group having 2 to 13 carbon atoms forming a ring has substituents, specific examples of such substituents include alkyl groups having 1 to 6 carbon atoms, aryl groups having 6 to 13 carbon atoms forming a ring, and heteroaryl groups having 2 to 13 carbon atoms forming a ring. Additionally, some or all of the hydrogen atoms in the heteroaryl group having 2 to 13 carbon atoms forming a ring may be deuterium.

[0070] Specifically, examples of organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3) include the organic compounds represented by the following structural formulas (100) to (114).

[0071] [ka]

[0072] The organic compounds represented by the above structural formulas (100) to (114) are examples of organic compounds represented by the above general formulas (G1) and (G2-1) to (G2-3), but the present invention is not limited to these.

[0073] Next, as an example of an organic compound according to one aspect of the present invention, a method for synthesizing an organic compound represented by the following general formula (G1) will be described. Note that various reactions can be applied to synthesize general formula (G1), and the method is not limited to the one described below.

[0074] [ka]

[0075] However, in the organic compound represented by the above general formula (G1), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, and R 1 and R 2 Each of the following independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted amino group, an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, or a heteroaryl group having 2 to 13 carbon atoms forming a substituted or unsubstituted ring, n represents an integer from 1 to 6, and L is the group represented by the above general formula (L-1). Furthermore, in the above general formula (L-1), R 3 and R 4 Each of these independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, k represents an integer from 1 to 5, and when k is 2 or greater, each R 3 and R 4 They may be the same or different.

[0076] Method for synthesizing organic compounds represented by general formula (G1) An organic compound represented by general formula (G1) according to one aspect of the present invention can be synthesized as shown in the following synthesis scheme (A-1). That is, an organic compound represented by general formula (G1) according to one aspect of the present invention can be obtained by coupling an organic compound represented by general formula (a1), which is either a halogen compound of an aromatic hydrocarbon or a heteroaromatic hydrocarbon, or a compound in which a triflate group is bonded to an aromatic hydrocarbon or a heteroaromatic hydrocarbon, with an organic compound represented by general formula (b1), which is a compound having a secondary amino group, for example by a Buchwald-Hartwig reaction.

[0077] [ka]

[0078] However, in the above synthesis scheme (A-1), L is a group represented by the following general formula (L-1).

[0079] [ka]

[0080] Furthermore, in the above general formula (a1), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, n represents an integer from 1 to 6, and X represents a halogen or a triflate group, with chlorine, bromine, and iodine being particularly preferred for X.

[0081] Furthermore, in the above general formula (b1), R 1 and R 2 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted amino group, an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, or a heteroaryl group having 2 to 13 carbon atoms forming a substituted or unsubstituted ring, and L is the group represented by the above general formula (L-1). Furthermore, in the above general formula (L-1), R 3 and R4 Each of these independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, k represents an integer from 1 to 5, and when k is 2 or greater, each R 3 and R 4 They may be the same or different. In addition, in the above synthesis scheme (A-1), m is a positive number, and it is preferable that m is greater than n.

[0082] Specific examples of palladium catalysts that can be used in the coupling reaction represented by the above synthesis scheme (A-1) include palladium(II) acetate, tetrakis(triphenylphosphine)palladium(O), bis(triphenylphosphine)palladium(II) dichloride, etc. Specific examples of ligands that can be used with the above palladium catalysts include (±)-2,2'-bis(diphenylphosphine)-1,1'-binaphthyl, tri(ortho-tolyl)phosphine, triphenylphosphine, tricyclohexylphosphine, etc.

[0083] Specific examples of bases that can be used in the coupling reaction represented by the above synthesis scheme (A-1) include organic bases such as potassium-tert-butoxide, and inorganic bases such as potassium carbonate and sodium carbonate.

[0084] In the coupling reaction represented by the above synthesis scheme (A-1), specific examples of solvents that can be used include toluene, xylene, mesitylene, benzene, tetrahydrofuran, and dioxane. However, the solvents that can be used are not limited to these.

[0085] Furthermore, the reactions carried out in the above synthesis scheme (A-1) are not limited to the Buchwald-Hartwig reaction, but can also be the Migita-Kosugi-Still coupling reaction using organotin compounds, coupling reactions using Grignard reagents, Ullmann reactions using copper or copper compounds, nucleophilic substitution reactions, etc.

[0086] The above describes a method for synthesizing the organic compound represented by general formula (G1), but the method for synthesizing the said organic compound is not limited to this.

[0087] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0088] (Embodiment 2) This embodiment describes the configuration of a light-emitting device using an organic compound according to one aspect of the present invention.

[0089] Figure 1(A) shows a light-emitting device 130, which is an example of a light-emitting device according to one embodiment of the present invention. The light-emitting device 130 is a light-emitting device having an organic compound layer 103 including a light-emitting layer 113 between a first electrode 101 including an anode and a second electrode 102 including a cathode.

[0090] Figure 1(B) shows a light-emitting device 130, which is another example of a light-emitting device according to one embodiment of the present invention. The light-emitting device 130 is a tandem type light-emitting device. The light-emitting device 130 has an organic compound layer 103, a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2, and an intermediate layer 116.

[0091] In this embodiment, a light-emitting device having one intermediate layer 116 and two light-emitting units is described as an example, but a light-emitting device having n (where n is an integer of 1 or more) layers of charge generation layers and n+1 layers of light-emitting units may also be used.

[0092] For example, the light-emitting device 130 shown in Figure 1(C) is an example of a tandem-type light-emitting device where n is 2 and the organic compound layer 103 comprises a first light-emitting unit 501, a first intermediate layer 116_1, a second light-emitting unit 502, a second intermediate layer 116_2, and a third light-emitting unit 503. The color gamut of the light emitted by the light-emitting layer in each light-emitting unit may be the same or different. Furthermore, the light-emitting layer may be a single layer or a laminated structure. For example, white light emission can be obtained by a configuration in which the first and third light-emitting units emit light in the blue region, and the second light-emitting unit emits light in the red and green regions from the laminated light-emitting layer.

[0093] The light-emitting device 130 may be a light-emitting device fabricated using, for example, a photolithography method. In the case of a light-emitting device fabricated using a photolithography method, at least the light-emitting layer 113 or the second light-emitting layer 113_2 and the organic compound layer on the first electrode 101 side are processed simultaneously, so their edges are generally aligned vertically.

[0094] Furthermore, the organic compound layer 103 may include other functional layers in addition to the light-emitting layer. Figure 1(A) illustrates a configuration in which the organic compound layer 103 includes a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113. Also, the first light-emitting unit 501 and the second light-emitting unit 502 may include other functional layers in addition to the light-emitting layer. Figure 1(B) illustrates a configuration in which the first light-emitting unit 501 includes a hole injection layer 111, a first hole transport layer 112, and a first electron transport layer 114, in addition to the first light-emitting layer 113, and the second light-emitting unit 502 includes a second light-emitting layer 113, a second hole transport layer 112, a second electron transport layer 114, and an electron injection layer 115. However, the configuration of the organic compound layer 103 in the present invention is not limited to this, and any of the layers may be omitted, or other layers may be provided. Typical examples of other layers include carrier blocking layers (hole blocking layers, electron blocking layers) and exciton blocking layers.

[0095] 《Composition of the Middle Layer》 First, let's describe the materials that can be used for the intermediate layer 116. For the intermediate layer 116, an organic compound according to one aspect of the present invention, as described in Embodiment 1, can be used. More specifically, the intermediate layer 116 is a layer having a first layer 119 and a second layer 117, and it is preferable to use an organic compound according to one aspect of the present invention, as described in Embodiment 1, for the first layer 119.

[0096] The second layer 117 is located closer to the second electrode 102 than the first layer 119. Furthermore, a third layer 118 may be provided between the first layer 119 and the second layer 117 to facilitate the smooth transfer of electrons between these two layers.

[0097] Furthermore, since the intermediate layer 116 has a first layer 119, the first layer 119 plays the role of an electron injection layer in the anode-side light-emitting unit. Therefore, the anode-side light-emitting unit (the first light-emitting unit 501 in Figure 1(B)) may or may not have an electron injection layer. Similarly, since the intermediate layer 116 has a second layer 117, the second layer 117 plays the role of a hole injection layer in the cathode-side light-emitting unit. Therefore, the cathode-side light-emitting unit (the second light-emitting unit 502 in Figure 1(B)) may or may not have a hole injection layer.

[0098] The first layer 119 may have an organic compound having electron-transporting properties in addition to the organic compound according to one embodiment of the present invention.

[0099] An electron-transporting organic compound that can be used in the first layer 119 has an electron mobility of 1 × 10⁻¹⁰ at an electric field strength [V / cm] square root of 600. -7 cm 2 / Vs or greater, preferably 1 × 10 -6 cm 2 A material having an electron mobility of / Vs or higher is preferred. However, any material with higher electron transport capabilities than holes can be used.

[0100] The above organic compounds are preferably organic compounds having a π-electron-deficient heteroaromatic ring. The organic compounds having a π-electron-deficient heteroaromatic ring are preferably any or more of the following: organic compounds containing a heteroaromatic ring having a polyazole skeleton, organic compounds containing a heteroaromatic ring having a pyridine skeleton, organic compounds containing a heteroaromatic ring having a diazine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton.

[0101] Specifically, the electron-transporting organic compounds that can be used in the first layer 119 include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated as OXD-7), and 9-[4-(5-phenyl-1,3,4-oxadiazole-2 Organic compounds having an azole skeleton such as -yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviation: BzOs), 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(dibenzothiophen-4-yl)phenyl 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-Diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mDB tBPNfpr), 9-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[ Pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzoflo[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo [3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalene-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bi Organic compounds having a diazine skeleton such as su(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobio[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-to Liazin (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazin (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenantrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazine-2-yl]-11,12-dihydro-12- Examples of organic compounds having a triazine skeleton include phenylindoro[2,3-a]carbazole (abbreviated as BP-Icz(II)Tzn), 2-[3'-(triphenylene-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), and 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviated as mBP-TPDBfTzn). In particular, organic compounds having a phenanthroline skeleton, such as Bphen, BCP, NBphen, and mPPhen2P, are preferred, and organic compounds having a phenanthroline dimer structure, such as mPPhen2P, are more preferred due to their superior stability.

[0102] Furthermore, the second layer 117, which is the charge generation layer, is preferably formed from a composite material containing an acceptor material and a hole-transporting organic compound. Various organic compounds can be used as the hole-transporting organic compound for the composite material, such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.). -6 cm 2It is preferable that the organic compound has a hole mobility of / Vs or greater. The hole-transporting organic compound used in the composite material is preferably a compound having a condensed aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the condensed aromatic hydrocarbon ring, anthracene rings, naphthalene rings, etc. are preferred. As the π-electron-rich heteroaromatic ring, a condensed aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, or a thiophene skeleton is preferred, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or heteroaromatic ring is further condensed thereon is preferred.

[0103] Such hole-transporting organic compounds more preferably have one of the following skeletons: carbazole, dibenzofuran, dibenzothiophene, or anthracene. In particular, they may be aromatic amines having substituents including a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group. Furthermore, it is preferable that these hole-transporting organic compounds are substances having an N,N-bis(4-biphenyl)amino group, as this allows for the creation of light-emitting devices with a good lifetime.

[0104] Organic compounds exhibiting hole transport properties as described above include, specifically, N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)be Nzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl ]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl [4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl) [phenyl]tris(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis( Examples include 9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-2-amine, and N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-1-amine.

[0105] Furthermore, other aromatic amine compounds that possess hole-transporting properties can also be used, such as N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviated as DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviated as DPA3B).

[0106] Furthermore, as acceptor substances included in the second layer 117, organic compounds having electron-withdrawing groups (halogen groups, cyano groups, etc.) can be used, such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are thermally stable and preferred. Furthermore, radialene derivatives having an electron-withdrawing group (especially halogen groups such as fluoro groups, cyano groups, etc.) are preferred because they have very high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile]. In addition to the organic compounds mentioned above, other acceptor materials that can be used include transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide.

[0107] The third layer 118 contains an electron-transporting material and has the function of preventing interaction between the first layer 119 and the second layer 117, thereby smoothly transferring electrons. The LUMO level of the electron-transporting material contained in the third layer 118 is preferably between the LUMO level of the acceptor material in the second layer 117 and the LUMO level of the organic compound contained in the layer in contact with the intermediate layer 116 in the light-emitting unit on the first electrode 101 side (in Figure 1(B), the first electron-transporting layer 114_1 in the first light-emitting unit 501). The specific energy level of the LUMO level of the electron-transporting material used in the third layer 118 is preferably -5.0 eV or higher, preferably -5.0 eV or higher and -3.0 eV or lower. It is preferable to use a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand as the electron-transporting material used in the third layer 118.

[0108] Next, we will describe the configuration of the light-emitting device 130 other than the intermediate layer 116.

[0109] 《Configuration of the first electrode》 The first electrode 101 is an electrode including an anode. The first electrode 101 may have a layered structure, in which case the layer in contact with the organic compound layer 103 functions as the anode. The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof with a large work function (specifically, 4.0 eV or more). Specifically, examples include indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, and indium oxide (IWZO) containing tungsten oxide and zinc oxide. These conductive metal oxide films are usually deposited by sputtering, but they may also be fabricated using methods such as the sol-gel method. An example of a fabrication method is to form indium zinc oxide by sputtering using a target to which 1 to 20 wt% zinc oxide is added to indium oxide. Furthermore, indium oxide (IWZO) containing tungsten oxide and zinc oxide can also be formed by sputtering using a target containing 0.5-5 wt% tungsten oxide and 0.1-1 wt% zinc oxide relative to indium oxide. Other materials that can be used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metallic materials (e.g., titanium nitride). Alternatively, graphene can also be used as a material for the anode. By using the composite material constituting the second layer 117 in the intermediate layer 116 as the layer in contact with the anode (typically a hole injection layer), the electrode material can be selected regardless of the work function.

[0110] 《Configuration of the hole injection layer》 The hole injection layer 111 is provided in contact with the anode and has the function of facilitating the injection of holes into the organic compound layer 103 (first light-emitting unit 501). The hole injection layer 111 can be formed from phthalocyanine-based compounds such as phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine (abbreviated as CuPc), aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) and 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), or polymers such as poly(3,4-ethylenedioxythiophene) / (polystyrene sulfonic acid) (abbreviated as PEDOT / PSS).

[0111] Furthermore, the hole injection layer 111 may be formed from a material having electron acceptor properties. The materials listed above as acceptor materials used in the composite material constituting the second layer 117 in the intermediate layer 116 can be used as the acceptor material.

[0112] Furthermore, the hole injection layer 111 may be formed using the same composite material that constitutes the second layer 117 in the intermediate layer 116.

[0113] Furthermore, in the hole injection layer 111, it is even more preferable that the hole-transporting organic compound used in the composite material has a relatively deep HOMO level between -5.7 eV and -5.4 eV. Having a relatively deep HOMO level in the hole-transporting organic compound used in the composite material facilitates hole injection into the hole transport layer and makes it easier to obtain a light-emitting device with a good lifetime. In addition, having a relatively deep HOMO level in the hole-transporting organic compound used in the composite material moderately suppresses hole induction, resulting in a light-emitting device with an even better lifetime.

[0114] By forming the hole injection layer 111, the hole injection performance is improved, and a light-emitting device with a low driving voltage can be obtained.

[0115] Furthermore, among substances with acceptor properties, organic compounds with acceptor properties are easy to use because they are readily deposited and easy to form films.

[0116] Furthermore, since the second layer 117 in the intermediate layer 116 functions as a hole injection layer, the second light-emitting unit 502 does not have a hole injection layer, but a hole injection layer may be provided in the second light-emitting unit 502.

[0117] The hole transport layers (first hole transport layer 112_1, second hole transport layer 112_2) are formed by containing an organic compound having hole-transporting properties. The organic compound having hole-transporting properties is 1 × 10⁻⁶ -6 cm 2 It is preferable that the hole mobility is greater than or equal to / Vs.

[0118] Materials having the above hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as BPAFLP), and 4-phenyl-3'- (9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9 Compounds having an aromatic amine skeleton such as H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluoren]-2-amine (abbreviation: PCBASF), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl) Bazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation :BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1”-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1”- [Terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2) Compounds having a carbazole skeleton such as -yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylene-2-yl)-9'-[1,1':3',1”-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples include compounds having a thiophene skeleton such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV), and compounds having a furan skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviated as DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transportability, and contribute to reducing the driving voltage. Furthermore, the materials listed as having hole-transporting properties used in the composite material of the hole injection layer 111 can also be suitably used as materials constituting the hole transport layer.

[0119] 《Composition of the luminescent layer》 The light-emitting layer (light-emitting layer 113, first light-emitting layer 113_1, second light-emitting layer 113_2) preferably contains a light-emitting substance and a host material. The light-emitting layer may also contain other materials. Furthermore, it may be a laminate of two layers with different compositions.

[0120] The luminescent material can be a fluorescent material, a phosphorescent material, a material that exhibits thermally activated delayed fluorescence (TADF), or any other luminescent material.

[0121] Examples of materials that can be used as fluorescent materials in the light-emitting layer include the following. Other fluorescent materials can also be used.

[0122] 5,6-Bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-Diphenyl-N,N'-Bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyren-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-Bis(3-methylphenyl)-N,N'-Bis[3-(9-phenyl-9H-fluoren-9-yl )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), 9,10-bis(2-biphenyl)-2-(N,N',N'-triphenyl-1,4-phenylenediamine-N-yl)anthracene (abbreviation: 2DPABPhA), 9 ,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubren, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H- Pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-diamine ( Abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-Bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b Examples include ]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds like 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they have high hole-trapping properties and excellent luminescence efficiency or reliability.

[0123] When using phosphorescent materials as the light-emitting material in the light-emitting layer, possible materials include, for example, the following:

[0124] Organometallic iridium complexes having a 4H-triazole skeleton, such as Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), Tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), Tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) ( Abbreviation: [Ir(Mptz1-mp)3]), organometallic iridium complexes having a 1H-triazole skeleton such as tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), organometallic iridium complexes having an imidazole skeleton such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenantridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’Examples include organometallic iridium complexes that use phenylpyridine derivatives having electron-withdrawing groups, such as iridium(III) acetylacetonate (abbreviated as FIracac), as ligands. These compounds exhibit blue phosphorescence and have emission peaks in the wavelength range of 450 nm to 520 nm.

[0125] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6- Organometallic iridium complexes having a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes having a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyrimidinato-N,C 2’ Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinate-N,C) 2’Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinate)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinate)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofl[2,3-b]pyridinyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofl[2,3-b]pyridinyl-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpy Examples include organometallic iridium complexes with a pyridine skeleton, such as py-iPr-d4), [2-d3-methyl-(2-pyridinyl-κN)benzoflofro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)), and [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), as well as rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]). These compounds primarily exhibit green phosphorescence and have emission peaks in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes with a pyrimidine skeleton are particularly preferred due to their outstanding reliability and luminescence efficiency.

[0126] Furthermore, organometallic iridium complexes having a pyrimidine skeleton, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and bis[4,6-di(naphthalene-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and tris(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C) 2’ Examples include organometallic iridium complexes with a pyridine skeleton, such as iridium(III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviated as [Eu(DBM)3(Phen)]) and tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviated as [Eu(TTA)3(Phen)]). These compounds exhibit red phosphorescence and have emission peaks in the wavelength range from 600 nm to 700 nm. Furthermore, organometallic iridium complexes with a pyrazine skeleton produce a red emission with good chromaticity.

[0127] In addition to the phosphorescent compounds described above, other known phosphorescent compounds may be selected and used.

[0128] As TADF materials, fullerenes and their derivatives, acridines and their derivatives, eosin derivatives, etc., can be used. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be used. Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (SnF2(Proto IX)), mesoporphyrin-tin fluoride complexes (SnF2(Meso IX)), hematoporphyrin-tin fluoride complexes (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complexes (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complexes (SnF2(OEP)), etioporphyrin-tin fluoride complexes (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complexes (PtCl2OEP), as shown in the following structural formulas.

[0129] [ka]

[0130] Furthermore, the following structural formulas represent 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazol (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn) Heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring can also be used, such as PXZ-TRZ, 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviated as DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviated as ACRSA). The heterocyclic compound is preferred because it has both a π-electron-excess heteroaromatic ring and a π-electron-deficient heteroaromatic ring, resulting in high electron transport and hole transport properties. Among the skeletons having a π-electron-deficient heteroaromatic ring, the pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, the benzoflopyrimidine skeleton, benzothienopyrimidine skeleton, benzoflopyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptability and are reliable. Furthermore, among the skeletons having a π-electron-excess heteroaromatic ring, the acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable, and therefore it is preferable to have at least one of these skeletons.Furthermore, a dibenzofuran skeleton is preferred as the furan skeleton, and a dibenzothiophene skeleton is preferred as the thiophene skeleton. In addition, as the pyrrole skeleton, indole skeleton, carbazole skeleton, indrocarbazole skeleton, bicarbazole skeleton, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton are particularly preferred. Substances in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded are particularly preferred because both the electron-donating and electron-accepting properties of the π-electron-rich heteroaromatic ring are strengthened, and the energy difference between the S1 and T1 levels is reduced, thus efficiently obtaining thermally activated delayed fluorescence. In addition, an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the π-electron-deficient heteroaromatic ring. Furthermore, aromatic amine skeletons, phenazine skeletons, etc., can be used as the π-electron-rich skeleton. Furthermore, as π-electron-deficient skeletons, xanthene skeletons, thioxanthene dioxide skeletons, oxadiazole skeletons, triazole skeletons, imidazole skeletons, anthraquinone skeletons, boron-containing skeletons such as phenylborane and volanthrene, aromatic rings having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, heteroaromatic rings, carbonyl skeletons such as benzophenone, phosphine oxide skeletons, sulfone skeletons, etc., can be used. In this way, π-electron-deficient skeletons and π-electron-excess skeletons can be used instead of at least one of π-electron-deficient heteroaromatic rings and π-electron-excess heteroaromatic rings.

[0131] [ka]

[0132] Furthermore, as the TADF material, a TADF material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Since such a TADF material has a shorter luminescence lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting device. Specifically, materials with the molecular structure shown below are examples.

[0133] [ka]

[0134] TADF materials are materials that have a small difference between the S1 and T1 energy levels and possess the ability to convert energy from triplet excitation energy to singlet excitation energy through reverse intersystem crossing. Therefore, it is possible to upconvert triplet excitation energy to singlet excitation energy (reverse intersystem crossing) with only a small amount of thermal energy, and singlet excited states can be efficiently generated. Furthermore, triplet excitation energy can be converted into luminescence.

[0135] Furthermore, an excited complex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 and T1 levels and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0136] Furthermore, the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 level. When a TADF material is subjected to a tangent line drawn at the short-wavelength tail of its fluorescence spectrum, with the energy at the wavelength of the extrapolation line being defined as the S1 level, and when a tangent line is drawn at the short-wavelength tail of its phosphorescence spectrum, with the energy at the wavelength of the extrapolation line being defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0137] Furthermore, when using TADF material as a light-emitting material, it is preferable that the S1 level of the host material is higher than the S1 level of the TADF material. Also, it is preferable that the T1 level of the host material is higher than the T1 level of the TADF material.

[0138] Various carrier transport materials can be used as the host material for the light-emitting layer, such as materials with electron transport properties and / or hole transport properties, and the TADF material mentioned above.

[0139] As for materials that possess hole-transporting properties, those previously listed as materials with hole-transporting properties can be used in the same way.

[0140] As for materials with electron transport properties, those previously listed as materials with electron transport properties can be used in the same way.

[0141] The TADF materials listed above can be used as host materials. When a TADF material is used as a host material, the triplet excitation energy generated by the TADF material is converted into singlet excitation energy through reverse intersystem crossing, and this energy is then transferred to the light-emitting material, thereby increasing the luminescence efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor.

[0142] This is particularly effective when the light-emitting material is a fluorescent material. Furthermore, in order to obtain high luminescence efficiency, it is preferable that the S1 level of the TADF material is higher than that of the fluorescent material. Also, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material.

[0143] Furthermore, it is preferable to use a TADF material that exhibits emission that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material. This is preferable because it allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient emission.

[0144] Furthermore, for singlet excitation energy to be efficiently generated from triplet excitation energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To achieve this, it is preferable that the fluorescent material has protecting groups around the luminescent phosphoform (the skeleton that causes luminescence). Preferred protecting groups are substituents without π bonds, and saturated hydrocarbons are preferred. Specifically, examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even preferable to have multiple protecting groups. Substituents without π bonds have poor carrier transport function, and therefore can increase the distance between the TADF material and the luminescent phosphoform of the fluorescent material with little effect on carrier transport or carrier recombination. Here, the luminescent phosphoform refers to the atomic group (skeleton) that causes luminescence in the fluorescent material. The luminescent phosphodiosity preferably has a skeleton containing π bonds, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring. Examples of condensed aromatic rings or condensed heteroaromatic rings include phenanthrene skeletons, stilbene skeletons, acridone skeletons, phenoxazine skeletons, and phenothiazine skeletons. Fluorescent materials having naphthalene, anthracene, fluorene, chrysene, triphenylene, tetracene, pyrene, perylene, coumarin, quinacridone, or naphthobisbenzofuran skeletons are particularly preferred due to their high fluorescence quantum yield.

[0145] When using a fluorescent material as the light-emitting material, a material having an anthracene skeleton is preferred as the host material. Using a material having an anthracene skeleton as the host material for a fluorescent material makes it possible to realize a light-emitting layer with good luminescence efficiency and durability. Among the materials having an anthracene skeleton to be used as the host material, materials having a diphenylanthracene skeleton, and especially a 9,10-diphenylanthracene skeleton, are preferred because they are chemically stable. Furthermore, while a carbazole skeleton is preferred as the host material because it improves hole injection and transport, a benzocarbazole skeleton, in which a benzene ring is further condensed into carbazole, is even more preferred because the HOMO is about 0.1 eV shallower than carbazole, making it easier for holes to enter. In particular, a dibenzocarbazole skeleton is preferred as the HOMO is about 0.1 eV shallower than carbazole, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or dibenzocarbazole skeleton). Furthermore, from the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9-[4-(10-phenyl-9-antracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviated as 2mBnfPPA), and 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'- [Iyl]anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)ben Examples include zo[b]naphtho[2,3-d]furan (abbreviated as Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviated as βN-mβNPAnth), and 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviated as EtBImPBPhA). In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties and are therefore preferred choices.

[0146] The host material may be a mixture of multiple substances, and when using a mixed host material, it is preferable to mix an electron-transporting material with a hole-transporting material. By mixing an electron-transporting material with a hole-transporting material, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the hole-transporting material to the electron-transporting material should be 1:19 to 19:1.

[0147] Furthermore, phosphorescent materials can be used as part of the above-mentioned mixed materials. When a fluorescent material is used as the light-emitting material, the phosphorescent material can be used as an energy donor to supply excitation energy to the fluorescent material.

[0148] Furthermore, these mixed materials may form an excited complex. It is preferable to select a combination that forms an excited complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the luminescent material, as this facilitates smooth energy transfer and efficiently obtains light emission. This configuration is also preferable because it reduces the driving voltage.

[0149] Furthermore, at least one of the materials forming the excitation complex may be a phosphorescent material. This allows for the efficient conversion of the triplet excitation energy to the singlet excitation energy through reverse intersystem crossing.

[0150] For efficient excitation complex formation, it is preferable that the HOMO level of the hole-transporting material is above the HOMO level of the electron-transporting material. Furthermore, it is preferable that the LUMO level of the hole-transporting material is above the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0151] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be replaced with transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a mixed film made by mixing these materials, and observing the differences in the transient response.

[0152] 《Configuration of the electron transport layer》 The electron transport layer (electron transport layer 114, first electron transport layer 114_1, second electron transport layer 114_2) is a layer containing a material that has electron transport properties. The electron transport material has an electron mobility of 1 × 10⁻¹⁰ at an electric field strength [V / cm] square root of 600. -7 cm 2 / Vs or greater, preferably 1 × 10 -6 cm 2 A substance with a Vs of 1 / Vs or higher is preferred. However, any substance with higher electron transport capacity than hole transport can be used. In addition, an organic compound having a π-electron-deficient heteroaromatic ring is preferred. The organic compound having a π-electron-deficient heteroaromatic ring is preferably one or more of the following: an organic compound containing a heteroaromatic ring having a polyazole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton.

[0153] As an organic compound having electron-transporting properties that can be used in the above-mentioned electron transport layer, any organic compound that can be used as an organic compound having electron-transporting properties in the first layer of the intermediate layer 116 can be used in the same way. In particular, organic compounds containing a heteroaromatic ring having a diazine skeleton, or an organic compound containing a heteroaromatic ring having a pyridine skeleton, or an organic compound containing a heteroaromatic ring having a triazine skeleton are preferred due to their good reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton, or an organic compound containing a heteroaromatic ring having a triazine skeleton, have high electron-transporting properties and contribute to reducing the driving voltage.

[0154] Furthermore, the electron transport layer has an electron mobility of 1 × 10⁻¹⁰ at an electric field strength [V / cm] square root of 600. -7 cm 2 / Vs or more 5×10 -5 cm 2 It is preferable that the value is less than or equal to / Vs. By reducing the electron transport properties in the electron transport layer, the amount of electrons injected into the light-emitting layer can be controlled, preventing the light-emitting layer from becoming electron-excessive. This configuration is particularly preferable when the hole injection layer is formed as a composite material, and the HOMO level of the material having hole transport properties in the composite material is a relatively deep HOMO level between -5.7eV and -5.4eV, as this results in a good lifetime. In this case, it is preferable that the HOMO level of the material having electron transport properties is -6.0eV or higher.

[0155] 《Configuration of the electron injection layer》 As the electron injection layer 115, alkali metals such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-quinolinolatolithium (abbreviated as Liq), and ytterbium (Yb), as well as alkaline earth metals, rare earth metals, or compounds or complexes thereof, can be used. The electron injection layer 115 may consist of a layer made of an electron-transporting material containing an alkali metal or alkaline earth metal or a compound thereof, or an electride may be used. Examples of electrides include a material obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration.

[0156] Furthermore, as the electron injection layer 115, it is also possible to use a layer containing an electron-transporting substance (preferably an organic compound having a bipyridine skeleton) with an alkali metal or alkaline earth metal fluoride at a concentration above that which results in a microcrystalline state (50 wt% or more). Since this layer has a low refractive index, it is possible to provide a light-emitting device with better external quantum efficiency.

[0157] Furthermore, the organic compound according to one embodiment of the present invention described in Embodiment 1 can be used as the electron injection layer 115. In addition, the electron injection layer 115 may also contain an electron-transporting substance in addition to the organic compound according to one embodiment of the present invention described in Embodiment 1.

[0158] 《Configuration of the second electrode》 The second electrode 102 is an electrode that includes a cathode. The second electrode 102 may have a layered structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. As the material forming the cathode, metals, alloys, electrically conductive compounds, and mixtures thereof with a small work function (specifically 3.8 eV or less) can be used. Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to group 1 or 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys containing these (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, silicon, or indium oxide-tin oxide containing silicon oxide can be used as the cathode, regardless of the magnitude of the work function.

[0159] Furthermore, if the second electrode 102 is formed from a material that is transparent to visible light, it can be made into a light-emitting device that emits light from the second electrode 102 side.

[0160] These conductive materials can be formed using dry methods such as vacuum deposition or sputtering, inkjet printing, or spin coating. Alternatively, they may be formed using a wet method with a sol-gel process, or using a metal paste.

[0161] Furthermore, various methods can be used to form the organic compound layer 103, regardless of whether they are dry or wet methods. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, or spin coating may be used.

[0162] Furthermore, each electrode or layer described above may be formed using different film deposition methods.

[0163] Figure 2 shows two adjacent light-emitting devices (light-emitting device 130a, light-emitting device 130b) included in a light-emitting device according to one embodiment of the present invention.

[0164] The light-emitting device 130a has an organic compound layer 103a between the first electrode 101a and the second electrode 102 on the insulating layer 175. The organic compound layer 103a has a configuration in which a first light-emitting unit 501a and a second light-emitting unit 502a are stacked with an intermediate layer 116a in between. Although Figure 2 shows an example in which two light-emitting units are stacked, a configuration in which three or more light-emitting units are stacked is also possible. The first light-emitting unit 501a has a hole injection layer 111a, a first hole transport layer 112a_1, a first light-emitting layer 113a_1, and a first electron transport layer 114a_1. The intermediate layer 116a has a second layer 117a, a third layer 118a, and a first layer 119a. The third layer 118a may or may not be present. The second light-emitting unit 502a includes a second hole transport layer 112a_2, a second light-emitting layer 113a_2, a second electron transport layer 114a_2, and an electron injection layer 115.

[0165] The light-emitting device 130b has an organic compound layer 103b between the first electrode 101b and the second electrode 102 on the insulating layer 175. The organic compound layer 103b has a configuration in which the first light-emitting unit 501b and the second light-emitting unit 502b are stacked with an intermediate layer 116b in between. Although Figure 2 shows an example in which two light-emitting units are stacked, a configuration in which three or more light-emitting units are stacked is also possible. The first light-emitting unit 501b has a hole injection layer 111b, a first hole transport layer 112b_1, a first light-emitting layer 113b_1, and a first electron transport layer 114b_1. The intermediate layer 116b has a second layer 117b, a third layer 118b, and a first layer 119b. The third layer 118b may or may not be present. The second light-emitting unit 502b includes a second hole transport layer 112b_2, a second light-emitting layer 113b_2, a second electron transport layer 114b_2, and an electron injection layer 115.

[0166] Preferably, the electron injection layer 115 and the second electrode 102 are a continuous layer shared by the light-emitting devices 130a and 130b. Furthermore, the organic compound layers 103a and 103b other than the electron injection layer 115 are processed by photolithography after the formation of the layer that will become the second electron transport layer 114a_2 and after the formation of the layer that will become the second electron transport layer 114b_2, respectively, and are therefore independent of each other. In addition, the edges (contours) of the organic compound layers 103a other than the electron injection layer 115 are processed by photolithography and therefore roughly coincide with the substrate in the direction perpendicular to it. Similarly, the edges (contours) of the organic compound layers 103b other than the electron injection layer 115 are processed by photolithography and therefore roughly coincide with the substrate in the direction perpendicular to it.

[0167] Furthermore, the distance d between the first electrode 101a and the first electrode 101b can be made smaller than when mask deposition is performed because the organic compound layer is processed by photolithography, and can be set to 2 μm or more and 5 μm or less.

[0168] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be appropriately combined.

[0169] (Embodiment 3) As illustrated in Figures 3(A) and 3(B), multiple light-emitting devices 130 are formed on the insulating layer 175 to constitute a display device. In this embodiment, a display device according to one aspect of the present invention will be described in detail.

[0170] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixels 178 include sub-pixels 110R, sub-pixels 110G, and sub-pixels 110B.

[0171] In this specification, for example, when describing matters common to sub-pixels 110R, 110G, and 110B, they may be referred to simply as sub-pixel 110. Similarly, when describing matters common to other components distinguished by letters, the letters may be omitted and the corresponding symbols used.

[0172] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. This allows an image to be displayed on the pixel section 177. In this embodiment, three sub-pixels of red (R), green (G), and blue (B) are used as an example, but other combinations of sub-pixels of other colors may be used. Furthermore, the number of sub-pixels is not limited to three, but may be four or more. Examples of four sub-pixels include four sub-pixels of R, G, B, and white (W), four sub-pixels of R, G, B, and Y, and four sub-pixels of R, G, B, and infrared (IR).

[0173] In this specification and other documents, the row direction is sometimes referred to as the X direction, and the column direction as the Y direction. The X and Y directions intersect, for example, perpendicularly.

[0174] Figure 3(A) shows an example where subpixels of different colors are arranged in the X direction, and subpixels of the same color are arranged in the Y direction. Alternatively, subpixels of different colors may be arranged in the Y direction, and subpixels of the same color may be arranged in the X direction.

[0175] A connecting portion 140 and a region 141 may be provided on the outside of the pixel portion 177. The region 141 is provided between the pixel portion 177 and the connecting portion 140. An organic compound layer 103 is provided in the region 141. A conductive layer 151C is provided in the connecting portion 140.

[0176] Figure 3 shows an example where region 141 and connection portion 140 are located to the right of the pixel portion 177, but the positions of region 141 and connection portion 140 are not particularly limited. Also, region 141 and connection portion 140 may be singular or multiple.

[0177] Figure 3(B) is an example of a cross-sectional view between the dashed-dotted line A1-A2 in Figure 3(A). As shown in Figure 3(B), the display device 100 has an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layer 175, insulating layer 174, and insulating layer 173 are provided with openings that reach the conductive layer 172, and plugs 176 are provided to fill these openings.

[0178] In the pixel section 177, a light-emitting device 130 is provided on an insulating layer 175 and a plug 176. A protective layer 131 is provided so as to cover the light-emitting device 130. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0179] In Figure 3(B), multiple cross-sections of the inorganic insulating layer 125 and the insulating layer 127 are shown, but when the display device 100 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected as one unit. In other words, it is preferable that the insulating layer 127 is an insulating layer having an opening on the first electrode.

[0180] Figure 3(B) shows light-emitting devices 130R, 130G, and 130B as light-emitting devices 130. Light-emitting devices 130R, 130G, and 130B emit light of different colors. For example, light-emitting device 130R can emit red light, light-emitting device 130G can emit green light, and light-emitting device 130B can emit blue light. In addition, light-emitting devices 130R, 130G, or 130B may emit other visible light or infrared light.

[0181] One embodiment of the present invention can be a top-emission type, for example, which emits light in the opposite direction to the substrate on which the light-emitting device is formed. Alternatively, one embodiment of the present invention may be a bottom-emission type.

[0182] Examples of light-emitting materials for the light-emitting device 130 include organic compounds or organometallic complexes such as fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. Inorganic compounds such as quantum dots may also be used.

[0183] The light-emitting device 130R has the configuration shown in Embodiment 2. It includes a first electrode (pixel electrode) consisting of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer 104. The common layer 104 may or may not be provided, but its provision is preferable because it reduces damage to the organic compound layer 103R during processing. If the common layer 104 is provided, it is preferable that the common layer 104 is an electron injection layer. Furthermore, if the common layer 104 is provided, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0184] The light-emitting device 130G has the configuration shown in Embodiment 2. It includes a first electrode (pixel electrode) consisting of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but its provision is preferable because it reduces damage to the organic compound layer 103G during processing. If the common layer 104 is provided, it is preferable that the common layer 104 is an electron injection layer. Furthermore, if the common layer 104 is provided, the laminated structure of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0185] The light-emitting device 130B has the configuration shown in Embodiment 2. It includes a first electrode (pixel electrode) consisting of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but its provision is preferable because it reduces damage to the organic compound layer 103B during processing. If the common layer 104 is provided, it is preferable that the common layer 104 is an electron injection layer. Furthermore, if the common layer 104 is provided, the laminated structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0186] Of the pixel electrodes and common electrodes in a light-emitting device, one functions as the anode and the other as the cathode. In the following explanation, unless otherwise specified, it is assumed that the pixel electrodes function as the anode and the common electrodes function as the cathode.

[0187] The organic compound layers 103R, 103G, and 103B are independently arranged in island-like configurations, either individually or for each light-emitting color. By providing the organic compound layer 103 in an island-like configuration for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in high-definition display devices. This prevents crosstalk and enables the realization of a display device with extremely high contrast. In particular, it enables the realization of a display device with high current efficiency at low brightness levels.

[0188] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using photolithography.

[0189] Preferably, the organic compound layer 103 is provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the display device 100 compared to a configuration in which the edges of the organic compound layer 103 are located inward from the edges of the pixel electrode. In addition, by covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, contact between the pixel electrode and the second electrode 102 can be suppressed, thereby suppressing short circuits of the light-emitting device 130. Furthermore, the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the edges of the organic compound layer 103 can be increased. Since the edges of the organic compound layer 103 may be damaged by processing, using a region away from the edges of the organic compound layer 103 as the light-emitting region can improve the reliability of the light-emitting device 130.

[0190] Furthermore, in a display device according to one aspect of the present invention, it is preferable that the first electrode (pixel electrode) of the light-emitting device be in a stacked configuration. For example, in the example shown in Figure 3(B), the first electrode of the light-emitting device 130 is in a stacked configuration of a conductive layer 151 and a conductive layer 152. For example, when the display device 100 is a top-emission type and the pixel electrode of the light-emitting device 130 functions as an anode, it is preferable that the conductive layer 151 is a layer with high reflectivity for visible light, and the conductive layer 152 is a layer that, for example, transmits visible light and has a large work function. When the display device 100 is a top-emission type, the higher the reflectivity of the pixel electrode for visible light, the higher the efficiency of extracting light emitted by the organic compound layer 103. Also, when the pixel electrode functions as an anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Based on the above, by making the pixel electrodes of the light-emitting device 130 a stacked structure consisting of a conductive layer 151 with high reflectivity for visible light and a conductive layer 152 with a large work function, the light-emitting device 130 can be made into a light-emitting device with high light extraction efficiency and low driving voltage.

[0191] When the conductive layer 151 is a layer with high reflectivity to visible light, it is preferable that the reflectivity of the conductive layer 151 to visible light be, for example, 40% to 100% or 70% to 100%. Furthermore, when the conductive layer 152 is an electrode that transmits visible light, it is preferable that its transmittance to visible light be, for example, 40% or more.

[0192] In cases where the pixel electrode has a stacked structure consisting of multiple layers, the pixel electrode may be altered due to reactions between these layers, for example. For instance, when a film formed after the pixel electrode is created is removed by a wet etching method, galvanic corrosion may occur when the chemical solution comes into contact with the pixel electrode.

[0193] Therefore, in the display device 100 of this embodiment, a conductive layer 152 is formed so as to cover the upper and side surfaces of the conductive layer 151. This makes it possible to suppress contact between the chemical solution and the conductive layer 151, even when removing a film formed after the formation of a pixel electrode having the conductive layer 151 and the conductive layer 152 by a wet etching method. Thus, for example, the occurrence of galvanic corrosion on the pixel electrode can be suppressed. As a result, the display device 100 can be manufactured using a method with a high yield, making it a low-cost display device. Furthermore, since the occurrence of defects in the display device 100 can be suppressed, the display device 100 can be a highly reliable display device.

[0194] For example, a metallic material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used.

[0195] As the conductive layer 152, an oxide having one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing one or more of the following: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0196] The conductive layer 151 may be a laminated structure of multiple layers having different materials, and the conductive layer 152 may be a laminated structure of multiple layers having different materials. In this case, the conductive layer 151 may have a layer made of a material that can be used for the conductive layer 152, such as a conductive oxide, and the conductive layer 152 may have a layer made of a material that can be used for the conductive layer 151, such as a metallic material. For example, if the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer made of a material that can be used for the conductive layer 152.

[0197] Furthermore, it is preferable that the end of the conductive layer 151 has a tapered shape. Specifically, it is preferable that the end of the conductive layer 151 has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By making the side surface of the conductive layer 152 tapered, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0198] Figure 4(A) shows a case where the conductive layer 151 has a laminated structure of multiple layers containing different materials. As shown in Figure 4(A), the conductive layer 151 has a configuration comprising conductive layer 151a, conductive layer 151b on conductive layer 151a, and conductive layer 151c on conductive layer 151b. In other words, the conductive layer 151 shown in Figure 4(A) has a three-layer laminated structure. In this case, where the conductive layer 151 has a laminated structure of multiple layers, the reflectance for visible light of at least one of the layers constituting the conductive layer 151 should be higher than the reflectance for visible light of the conductive layer 152.

[0199] In the example shown in Figure 4(A), the conductive layer 151b is sandwiched between conductive layers 151a and 151c. It is preferable to use materials for conductive layers 151a and 151c that are less susceptible to deterioration than conductive layer 151b. For example, conductive layer 151a can be made of a material that is less prone to migration due to contact with the insulating layer 175 than conductive layer 151b. Furthermore, conductive layer 151c can be made of a material that is less susceptible to oxidation than conductive layer 151b, and whose oxide electrical resistivity is lower than that of the oxide material used for conductive layer 151b.

[0200] As described above, by sandwiching the conductive layer 151b between conductive layers 151a and 151c, the range of material selection for the conductive layer 151b can be broadened. This allows, for example, the conductive layer 151b to have a higher reflectivity to visible light than at least one of the conductive layers 151a and 151c. For example, aluminum can be used as the conductive layer 151b. Note that an alloy containing aluminum may also be used for the conductive layer 151b. Furthermore, titanium can be used as the conductive layer 151a, as it has a lower reflectivity to visible light compared to aluminum, but is less prone to migration than aluminum even when in contact with the insulating layer 175. In addition, titanium can be used as the conductive layer 151c, as it has a lower reflectivity to visible light compared to aluminum, but is less prone to oxidation than aluminum, and the electrical resistivity of its oxide is lower than that of aluminum oxide.

[0201] Furthermore, silver or a silver-containing alloy may be used as the conductive layer 151c. Silver has the property of having a higher reflectivity to visible light than titanium. In addition, silver is less prone to oxidation than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide. As a result, by using silver or a silver-containing alloy as the conductive layer 151c, it is possible to suitably increase the reflectivity of the conductive layer 151 to visible light while suppressing the increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 151b. Here, as the silver-containing alloy, for example, an alloy of silver, palladium, and copper (also written as Ag-Pd-Cu or APC) can be applied. Note that if silver or a silver-containing alloy is used as the conductive layer 151c and aluminum is used as the conductive layer 151b, the reflectivity of the conductive layer 151c to visible light can be made higher than the reflectivity of the conductive layer 151b to visible light. Here, silver or a silver-containing alloy may be used as the conductive layer 151b. Alternatively, silver or a silver-containing alloy may be used for the conductive layer 151a.

[0202] On the other hand, films using titanium have superior processability through etching compared to films using silver. Therefore, by using titanium as the conductive layer 151c, the conductive layer 151c can be easily formed. Films using aluminum also have superior processability through etching compared to films using silver.

[0203] As described above, by making the conductive layer 151 a laminated structure of multiple layers, the characteristics of the display device can be improved. For example, the display device 100 can be made into a display device with high light extraction efficiency and high reliability.

[0204] In this case, if a microcavity structure is applied to the light-emitting device 130, using silver or a silver-containing alloy, which is a material with high reflectivity for visible light, as the conductive layer 151c can suitably improve the light extraction efficiency of the display device 100.

[0205] As mentioned above, it is preferable that the sides of the conductive layer 151 have a tapered shape. Specifically, it is preferable that the sides of the conductive layer 151 have a tapered shape with a taper angle of less than 90°. For example, in the conductive layer 151 with the configuration shown in Figure 4(A), it is preferable that at least one side of conductive layer 151a, conductive layer 151b, and conductive layer 151c has a tapered shape.

[0206] The conductive layer 151 shown in Figure 4(A) can be formed using photolithography. Specifically, first, a conductive film to become conductive layer 151a, a conductive film to become conductive layer 151b, and a conductive film to become conductive layer 151c are deposited in sequence. Next, a resist mask is formed on the conductive film to become conductive layer 151c. After that, the conductive film in areas that do not overlap with the resist mask is removed, for example, using an etching method. Here, compared to the case in which the conductive layer 151 is formed so that the sides do not have a tapered shape, i.e., the sides are vertical, by processing the conductive film under conditions that make it easier for the resist mask to recede (shrink), the sides of the conductive layer 151 can be made tapered.

[0207] In this case, if the conductive film is processed under conditions where the resist mask is likely to recede (shrink), the conductive film may be more likely to be processed in the horizontal direction. In other words, the isotropy of etching may be higher than when the conductive layer 151 is formed so that the sides are vertical.

[0208] Furthermore, if the conductive layer 151 is constructed as a laminate of multiple layers made of different materials, the ease of horizontal processing may differ between these multiple layers. For example, the ease of horizontal processing may differ between conductive layer 151a, conductive layer 151b, and conductive layer 151c.

[0209] In this case, after processing the conductive film, as shown in Figure 4(A), the side surface of conductive layer 151b may be located inward from the side surfaces of conductive layer 151a and conductive layer 151c, forming a protrusion. This can reduce the coverage of conductive layer 152 over conductive layer 151, potentially causing stepped breaks in conductive layer 152.

[0210] Therefore, it is preferable to provide the insulating layer 156 as shown in FIG. 4(A). FIG. 4(A) shows an example in which the insulating layer 156 is provided on the conductive layer 151a so as to have a region overlapping with the side surface of the conductive layer 151b. Thereby, since the occurrence of step discontinuity or thinning of the conductive layer 152 due to the protrusion can be suppressed, connection failure or an increase in driving voltage can be suppressed.

[0211] In FIG. 4(A), although a structure in which the side surface of the conductive layer 151b is entirely covered with the insulating layer 156 is illustrated, a part of the side surface of the conductive layer 151b may not be covered with the insulating layer 156. Similarly, in the pixel electrode having the configuration shown hereinafter, a part of the side surface of the conductive layer 151b may not be covered with the insulating layer 156.

[0212] When the conductive layer 151 has the configuration shown in FIG. 4(A), the conductive layer 152 is provided so as to cover the conductive layer 151a, the conductive layer 151b, the conductive layer 151c, and the insulating layer 156 and to be electrically connected to the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Thereby, for example, even when the film formed after the formation of the conductive layer 152 is removed by a wet etching method, the chemical solution can be prevented from contacting any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Therefore, corrosion can be suppressed in any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Therefore, the display device 100 can be manufactured by a method with high yield. In addition, the occurrence of defects can be suppressed, and the display device 100 can be a highly reliable display device.

[0213] Here, as shown in FIG. 4(A), the insulating layer 156 preferably has a curved surface. Thereby, for example, the occurrence of steps in the conductive layer 152 covering the insulating layer 156 can be suppressed more than when the side surface of the insulating layer 156 is perpendicular (parallel to the Z direction). Further, even when the insulating layer 156 has a tapered shape on the side surface, specifically a tapered shape with a taper angle of less than 90°, the occurrence of steps in the conductive layer 152 covering the insulating layer 156 can be suppressed more than when the side surface of the insulating layer 156 is perpendicular. From the above, the display device 100 can be manufactured by a method with a high yield. Further, the occurrence of defects can be suppressed, and the display device 100 can be made a highly reliable display device.

[0214] Note that in FIG. 4(A), a configuration is shown in which the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c, but one aspect of the present invention is not limited to this. For example, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151a. Also, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151c.

[0215] FIGS. 4(B) to 4(D) show other configurations of the first electrode 101. FIG. 4(B) is a configuration in which in the first electrode 101 of FIG. 4(A), the insulating layer 156 covers not only the side surface of the conductive layer 151b but also the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c.

[0216] FIG. 4(C) is a configuration in which the insulating layer 156 is not provided in the first electrode 101 of FIG. 4(A).

[0217] FIG. 4(D) is a configuration in which in the first electrode 101 of FIG. 4(A), the conductive layer 151 does not have a laminated structure and the conductive layer 152 has a laminated structure.

[0218] The conductive layer 152a is a layer that has higher adhesion to the conductive layer 152b, for example, to the insulating layer 175. As the conductive layer 152a, an oxide having one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing one or more of the following: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. As a result, peeling of the conductive layer 152b can be suppressed. Furthermore, the conductive layer 152b can be configured not to come into contact with the insulating layer 175.

[0219] The conductive layer 152b is a layer whose reflectance to visible light (for example, reflectance to light of a predetermined wavelength in the range of 400 nm to less than 750 nm) is higher than that of conductive layers 151, 152a, and 152c. The reflectance to visible light of conductive layer 152b can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. Furthermore, a material with a higher reflectance to visible light than aluminum can be used as the conductive layer 152b. Specifically, for example, silver or an alloy containing silver can be used as the conductive layer 152b. An example of an alloy containing silver is an alloy of silver, palladium, and copper (APC). As a result, the display device 100 can be made into a display device with high light extraction efficiency. Note that a metal other than silver may be used as the conductive layer 152b.

[0220] When conductive layers 151 and 152 function as anodes, it is preferable that the conductive layer 152c be a layer with a large work function. For example, conductive layer 152c should have a larger work function than conductive layer 152b. For conductive layer 152c, for example, a material similar to the material that can be used for conductive layer 152a can be used. For example, the same type of material can be used for conductive layer 152a and conductive layer 152c. For example, if indium tin oxide is used for conductive layer 152a, indium tin oxide can also be used for conductive layer 152c.

[0221] Furthermore, when conductive layers 151 and 152 are used as cathodes, it is preferable to use layers with small work functions. For example, conductive layer 152c is a layer with a smaller work function than conductive layer 152b.

[0222] Furthermore, it is preferable that the conductive layer 152c is a layer with high transmittance to visible light (for example, transmittance to light of a predetermined wavelength in the range of 400 nm to less than 750 nm). For example, it is preferable that the transmittance to visible light of the conductive layer 152c is higher than the transmittance to visible light of the conductive layer 151 and the conductive layer 152b. For example, the transmittance to visible light of the conductive layer 152c can be 60% to 100%, preferably 70% to 100%, and more preferably 80% to 100%. As a result, the amount of light absorbed by the conductive layer 152c from the light emitted by the organic compound layer 103 can be reduced. Also, as mentioned above, the conductive layer 152b below the conductive layer 152c can be a layer with high reflectance to visible light. Therefore, the display device 100 can be a display device with high light extraction efficiency.

[0223] Next, an example of a method for manufacturing a display device 100 having the configuration shown in Figure 3(A) will be explained using Figures 8 to 13.

[0224] [Example of manufacturing method] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), or ALD. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic vapor deposition (MOCVD).

[0225] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film deposition methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0226] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers contained in the organic compound layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0227] Furthermore, when processing the thin film that constitutes the display device, it can be processed using, for example, photolithography. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, etc. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0228] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film, for example by etching, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0229] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other light sources such as ultraviolet light, KrF laser light, or ArF laser light can also be used. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it enables extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0230] For etching thin films, dry etching, wet etching, or sandblasting methods can be used.

[0231] First, as shown in Figure 5(A), an insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Next, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0232] As the substrate, a substrate having heat resistance sufficient to withstand at least subsequent heat treatment can be used. When an insulating substrate is used as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. Further, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or a semiconductor substrate such as an SOI substrate can be used.

[0233] Subsequently, as shown in FIG. 5(A), openings reaching the conductive layer 172 are formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Subsequently, a plug 176 is formed so as to fill the openings.

[0234] Subsequently, as shown in FIG. 5(A), a conductive film 151f that will later become the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, and the conductive layer 151C is formed on the plug 176 and on the insulating layer 175. For the formation of the conductive film 151f, for example, a sputtering method or a vacuum evaporation method can be used. Further, as the conductive film 151f, for example, a metal material can be used.

[0235] Subsequently, as shown in FIG. 5(A), a resist mask 191 is formed on the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0236] Subsequently, as shown in FIG. 5(B), for example, the conductive film 151f in a region that does not overlap with the resist mask 191 is removed using, for example, an etching method, specifically, for example, a dry etching method. When the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed using a wet etching method. Thereby, the conductive layer 151 is formed. When a part of the conductive film 151f is removed by a dry etching method, for example, a recess may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0237] Next, as shown in Figure 5(C), the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0238] Next, as shown in Figure 5(D), insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, and insulating layer 175. For forming the insulating film 156f, for example, CVD, ALD, sputtering, or vacuum deposition can be used.

[0239] Inorganic materials can be used for the insulating film 156f. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, or nitride-oxide insulating films can be used for the insulating film 156f. For example, silicon-containing oxide insulating films, nitride insulating films, oxidative nitride insulating films, or nitride-oxide insulating films can be used as the insulating film 156f. For example, silicon oxidative nitride can be used as the insulating film 156f.

[0240] Next, as shown in Figure 5(E), insulating layers 156R, 156G, 156B, and 156C are formed by processing the insulating film 156f. For example, the insulating layer 156 can be formed by etching the upper surface of the insulating film 156f substantially uniformly. This uniform etching and planarization is also called etch-back processing. The insulating layer 156 may also be formed using photolithography.

[0241] Next, as shown in Figure 6(A), a conductive film 152f, which will later become conductive layers 152R, 152G, 152B, and 152C, is formed on conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, insulating layer 156R, insulating layer 156G, insulating layer 156B, insulating layer 156C, and insulating layer 175. Specifically, for example, the conductive film 152f is formed so as to cover conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 156C.

[0242] For the formation of the conductive film 152f, for example, sputtering or vacuum deposition can be used. Alternatively, a conductive oxide can be used as the conductive film 152f. Or, a laminated structure can be applied to the conductive film 152f, consisting of a film using a metallic material and a film using a conductive oxide on the said film. For example, a laminated structure can be applied to the conductive film 152f, consisting of a film using titanium, silver, or a silver-containing alloy and a film using a conductive oxide on the said film.

[0243] Furthermore, the ALD method can be used to form the conductive film 152f. In this case, the conductive film 152f can be an oxide containing one or more of the following selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. In this case, the conductive film 152f can be formed by repeating a cycle in which one cycle consists of introducing a precursor (generally sometimes called a precursor or metal precursor), purging the precursor, introducing an oxidizing agent (generally sometimes called a reactant or nonmetal precursor), and purging the oxidizing agent. When forming an oxide film containing multiple types of metals, such as indium tin oxide, as the conductive film 152f, the metal composition can be controlled by varying the number of cycles for each type of precursor.

[0244] For example, when forming an indium tin oxide film as the conductive film 152f, an indium-containing precursor is introduced, the precursor is purged, and an oxidizing agent is introduced to form an In-O film. Then, a tin-containing precursor is introduced, the precursor is purged, and an oxidizing agent is introduced to form a Sn-O film. Here, by making the number of cycles for In-O film formation greater than the number of cycles for Sn-O film formation, the number of In atoms in the conductive film 152f can be made greater than the number of Sn atoms.

[0245] Furthermore, for example, when depositing a zinc oxide film as the conductive film 152f, a Zn-O film is formed using the procedure described above. Also, for example, when depositing an aluminum zinc oxide film as the conductive film 152f, a Zn-O film and an Al-O film are formed using the procedure described above. Also, for example, when depositing a titanium oxide film as the conductive film 152f, a Ti-O film is formed using the procedure described above. Also, for example, when depositing an indium tin oxide film containing silicon as the conductive film 152f, an In-O film, a Sn-O film, and a Si-O film are formed using the procedure described above. Also, for example, when depositing a zinc oxide film containing gallium, a Ga-O film and a Zn-O film are formed using the procedure described above.

[0246] As an indium-containing precursor, for example, triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As a tin-containing precursor, for example, tin chloride or tetrakis(dimethylamide)tin can be used. As a zinc-containing precursor, for example, diethylzinc or dimethylzinc can be used. As a gallium-containing precursor, for example, triethylgallium can be used. As a titanium-containing precursor, for example, titanium chloride, tetrakis(dimethylamide)titanium, or tetraisopropyl titanate can be used. As an aluminum-containing precursor, for example, aluminum chloride or trimethylaluminum can be used. As a silicon-containing precursor, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane can be used. In addition, water vapor, oxygen plasma, or ozone gas can be used as an oxidizing agent.

[0247] Next, as shown in Figure 6(B), the conductive film 152f is processed using, for example, photolithography to form conductive layers 152R, 152G, 152B, and 152C. Specifically, for example, after forming a resist mask, a portion of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. Alternatively, the conductive film 152f may be removed by dry etching. As a result, a pixel electrode having conductive layer 151 and conductive layer 152 is formed.

[0248] Next, it is preferable to perform a hydrophobic treatment on the conductive layer 152. The hydrophobic treatment can change the surface to be treated from hydrophilic to hydrophobic, or increase the hydrophobicity of the surface to be treated. By performing the hydrophobic treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be improved, and film peeling can be suppressed. However, the hydrophobic treatment is not required.

[0249] Next, as shown in Figure 6(C), an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175.

[0250] As shown in Figure 6(C), no organic compound film 103Rf is formed on the conductive layer 152C. For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask, to distinguish it from a fine metal mask), the organic compound film 103Rf can be deposited only in the desired region. By employing a film deposition process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured using a relatively simple process.

[0251] The organic compound film 103Rf can be formed, for example, by a vapor deposition method, specifically a vacuum vapor deposition method. Alternatively, the organic compound film 103Rf may be formed by methods such as a transfer method, a printing method, an inkjet method, or a coating method.

[0252] Next, as shown in Figure 6(C), a sacrificial film 158Rf, which will later become a sacrificial layer 158R, and a mask film 159Rf, which will later become a mask layer 159R, are formed in order on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175, respectively.

[0253] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure consisting of a sacrificial film 158Rf and a mask film 159Rf. However, the mask film may also be a single-layer structure or a laminated structure of three or more layers.

[0254] By providing a sacrificial layer on the organic compound film 103Rf, the damage sustained by the organic compound film 103Rf during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0255] For the sacrificial film 158Rf, a film with high resistance to the processing conditions of the organic compound film 103Rf is used, specifically a film with a high etching selectivity ratio with the organic compound film 103Rf. For the mask film 159Rf, a film with a high etching selectivity ratio with the sacrificial film 158Rf is used.

[0256] Furthermore, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0257] It is preferable to use films that can be removed by wet etching for the sacrificial film 158Rf and the mask film 159Rf. By using wet etching, the damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to when using dry etching.

[0258] For the formation of the sacrificial film 158Rf and the mask film 159Rf, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition can be used. Alternatively, they may be formed using the wet deposition method described above.

[0259] Furthermore, it is preferable that the sacrificial film 158Rf, which is formed in contact with the organic compound film 103Rf, is formed using a method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, it is preferable to form the sacrificial film 158Rf using the ALD method or vacuum deposition method rather than the sputtering method.

[0260] For the sacrificial film 158Rf and the mask film 159Rf, one or more types can be used, for example, from among metal films, alloy films, metal oxide films, semiconductor films, organic insulating films, and inorganic insulating films.

[0261] The sacrificial film 158Rf and the mask film 159Rf can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials. In particular, it is preferable to use low-melting-point materials such as aluminum or silver. It is preferable to use a metallic material capable of shielding ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf, as this can suppress irradiation of the organic compound film 103Rf with ultraviolet rays and thus suppress the degradation of the organic compound film 103Rf.

[0262] Furthermore, the sacrificial film 158Rf and the mask film 159Rf can be made from metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and silicon-containing indium tin oxide, respectively.

[0263] In addition, element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0264] Furthermore, it is preferable to use films containing a material that has light-shielding properties, particularly against ultraviolet light, as the sacrificial film and mask film. Various materials can be used as the light-shielding material, such as metals, insulators, semiconductors, and metalloids that have light-shielding properties against ultraviolet light. However, since part or all of the sacrificial film and mask film will be removed in a later process, it is preferable that the film be processable by etching, and in particular, that it has good processability.

[0265] As sacrificial films and mask films, semiconductor materials such as silicon or germanium are preferred due to their high affinity with semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, nonmetallic materials such as carbon, or compounds thereof, can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0266] By using sacrificial and mask films containing materials that are light-shielding against ultraviolet light, it is possible to suppress the irradiation of the organic compound layer with ultraviolet light during the exposure process, for example. By suppressing damage to the organic compound layer from ultraviolet light, the reliability of the light-emitting device can be improved.

[0267] Furthermore, a film containing a material that has light-shielding properties against ultraviolet rays can be used as a material for the inorganic insulating film 125f described later to achieve the same effect.

[0268] Furthermore, various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, oxide insulating films are preferred because they have higher adhesion to the organic compound film 103Rf compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. For example, aluminum oxide films can be formed as the sacrificial film 158Rf and the mask film 159Rf using the ALD method. Using the ALD method is preferable because it reduces damage to the substrate (especially the organic compound layer).

[0269] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the sacrificial film 158Rf, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used as the mask film 159Rf.

[0270] Furthermore, the same inorganic insulating film can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125 that is formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125. Here, the same film deposition conditions may be applied to the sacrificial film 158Rf and the inorganic insulating layer 125, or different film deposition conditions may be applied to each. For example, by depositing the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 158Rf is a layer that is mostly or completely removed in a later process, it is preferable that it be easy to process. For this reason, it is preferable to deposit the sacrificial film 158Rf under conditions where the substrate temperature during film deposition is lower than that of the inorganic insulating layer 125.

[0271] Organic materials may be used for one or both of the sacrificial film 158Rf and the mask film 159Rf. For example, as the organic material, a material that is soluble in a chemically stable solvent may be used for at least the film located on top of the organic compound film 103Rf. Materials that are soluble in water or alcohol are particularly suitable. When forming such a film, it is preferable to dissolve the material in a solvent such as water or alcohol, apply it using a wet film formation method, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the organic compound film 103Rf.

[0272] The sacrificial film 158Rf and the mask film 159Rf may be made of polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or organic resins such as perfluoropolymers.

[0273] For example, an organic film (e.g., a PVA film) formed using either a vapor deposition method or the wet film formation method described above can be used as the sacrificial film 158Rf, and an inorganic film (e.g., a silicon nitride film) formed using a sputtering method can be used as the mask film 159Rf.

[0274] Next, as shown in Figure 6(C), a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist), followed by exposure and development.

[0275] The resist mask 190R may be made using either a positive-type resist material or a negative-type resist material.

[0276] The resist mask 190R is provided in a position that overlaps with the conductive layer 152R. Preferably, the resist mask 190R is also provided in a position that overlaps with the conductive layer 152C. This helps to suppress damage to the conductive layer 152C during the manufacturing process of the display device. It is not necessary to provide the resist mask 190R on the conductive layer 152C. Furthermore, it is preferable that the resist mask 190R be provided so as to cover from the edge of the organic compound film 103Rf to the edge of the conductive layer 152C (the edge on the organic compound film 103Rf side), as shown in the cross-sectional view between B1 and B2 in Figure 6(C).

[0277] Next, as shown in Figure 6(D), a portion of the mask film 159Rf is removed using the resist mask 190R to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. After that, the resist mask 190R is removed. Subsequently, the mask layer 159R is used as a mask (also called a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0278] The sacrificial film 158Rf and the mask film 159Rf can be processed by wet etching or dry etching, respectively. It is preferable to process the sacrificial film 158Rf and the mask film 159Rf by isotropic etching.

[0279] By using the wet etching method, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to using the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0280] In the processing of the mask film 159Rf, the organic compound film 103Rf is not exposed, thus offering a wider range of processing method options compared to the processing of the sacrificial film 158Rf. Specifically, when processing the mask film 159Rf, even when using an etching gas containing oxygen, the degradation of the organic compound film 103Rf can be further suppressed.

[0281] Furthermore, when using a dry etching method for processing the sacrificial film 158Rf, the degradation of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas. When using a dry etching method, it is preferable to use a gas containing a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0282] For example, when an aluminum oxide film formed using the ALD method is used as the sacrificial film 158Rf, a portion of the sacrificial film 158Rf can be removed by dry etching using CHF3 and He, or CHF3, He, and CH4. Also, when an In-Ga-Zn oxide film formed using the sputtering method is used as the mask film 159Rf, a portion of the mask film 159Rf can be removed by wet etching using diluted phosphoric acid. Alternatively, a portion of the mask film 159Rf may be removed by dry etching using CH4 and Ar. Alternatively, a portion of the mask film 159Rf can be removed by wet etching using diluted phosphoric acid. Furthermore, when a tungsten film formed using the sputtering method is used as the mask film 159Rf, a portion of the mask film 159Rf can be removed by dry etching using SF6, CF4, and O2, or CF4, Cl2, and O2.

[0283] The resist mask 190R can be removed in the same manner as the resist mask 191. For example, it can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and a group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190R may be removed by wet etching. In this case, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed during the removal process of the resist mask 190R. Furthermore, the range of selectable methods for removing the resist mask 190R can be broadened.

[0284] Next, as shown in Figure 6(D), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a portion of the organic compound film 103Rf and form the organic compound layer 103R.

[0285] As a result, as shown in Figure 6(D), the laminated structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. The conductive layers 152G and 152B are exposed.

[0286] Figure 6(D) shows an example where the edge of the organic compound layer 103R is located outside the edge of the conductive layer 152R. This configuration allows for a higher aperture ratio of the pixels. Although not shown in Figure 6(D), the etching process may result in the formation of recesses in the region of the insulating layer 175 that does not overlap with the organic compound layer 103R.

[0287] Furthermore, since the organic compound layer 103R covers the top and sides of the conductive layer 152R, subsequent processes can be carried out without exposing the conductive layer 152R. If the edges of the conductive layer 152R are exposed, corrosion may occur, for example, during the etching process. Products generated by the corrosion of the conductive layer 152R may be unstable; for example, in the case of wet etching, they may dissolve in the solution, and in the case of dry etching, there is a concern that they may scatter into the atmosphere. Dissolution of the products into the solution or scattering into the atmosphere may cause the products to adhere to the treated surface and the sides of the organic compound layer 103R, for example, adversely affecting the characteristics of the light-emitting device or potentially forming a leak path between multiple light-emitting devices. In addition, in areas where the edges of the conductive layer 152R are exposed, the adhesion between layers in contact with each other decreases, which may make the organic compound layer 103R or the conductive layer 152R more prone to delamination.

[0288] Therefore, by configuring the organic compound layer 103R to cover the upper and side surfaces of the conductive layer 152R, for example, the yield and characteristics of the light-emitting device can be improved.

[0289] As described above, it is preferable that the resist mask 190R be provided so as to cover the area between the dashed-dotted lines B1 and B2, from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). As a result, as shown in Figure 6(D), the sacrificial layer 158R and the mask layer 159R are provided so as to cover the area between the dashed-dotted lines B1 and B2, from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). Therefore, for example, exposure of the insulating layer 175 between the dashed-dotted lines B1 and B2 can be suppressed. This prevents the insulating layer 175, insulating layer 174, and a part of the insulating layer 173 from being removed by etching or the like, and prevents the conductive layer 179 from being exposed. Therefore, it is possible to suppress the conductive layer 179 from being unintentionally electrically connected to other conductive layers. For example, it is possible to suppress a short circuit between the conductive layer 179 and the common electrode 155 formed in a later process.

[0290] The organic compound film 103Rf is preferably processed by anisotropic etching. In particular, anisotropic dry etching is preferred. Alternatively, wet etching may be used.

[0291] When using the dry etching method, the degradation of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0292] Furthermore, an etching gas containing oxygen may be used. Including oxygen in the etching gas can increase the etching rate. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate. This suppresses damage to the organic compound film 103Rf. In addition, it suppresses problems such as the adhesion of reaction products generated during etching.

[0293] When using the dry etching method, it is preferable to use an etching gas containing one or more elements from Group 18, such as H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He, Ar. Alternatively, it is preferable to use an etching gas containing one or more of these elements and oxygen. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He, can be used as the etching gas. Also, for example, a gas containing CF4, He, and oxygen can be used as the etching gas. Furthermore, for example, a gas containing H2 and Ar, and a gas containing oxygen can be used as the etching gas.

[0294] As described above, in one aspect of the present invention, a resist mask 190R is formed on a mask film 159Rf, and a mask layer 159R is formed by removing a portion of the mask film 159Rf using the resist mask 190R. Subsequently, an organic compound layer 103R is formed by removing a portion of the organic compound film 103Rf using the mask layer 159R as a hard mask. Thus, it can be said that an organic compound layer 103R is formed by processing the organic compound film 103Rf using a photolithography method. Note that a portion of the organic compound film 103Rf may be removed using the resist mask 190R. Subsequently, the resist mask 190R may be removed.

[0295] Next, it is preferable to perform a hydrophobic treatment on the conductive layer 152G, for example. During processing of the organic compound film 103Rf, the surface state of the conductive layer 152G may change to hydrophilic. For example, by performing a hydrophobic treatment on the conductive layer 152G, the adhesion between the conductive layer 152G and the layer formed in a later process (in this case, the organic compound layer 103G) can be improved, and film peeling can be suppressed. However, the hydrophobic treatment is not required.

[0296] Next, as shown in Figure 7(A), an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152B, the mask layer 159R, and the insulating layer 175.

[0297] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Rf. Furthermore, the organic compound film 103Gf can have the same structure as the organic compound film 103Rf.

[0298] Next, as shown in Figure 7(A), a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are formed in order on the organic compound film 103Gf and the mask layer 159R, respectively. After that, the resist mask 190G is formed. The materials and formation methods for the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190G are the same as those applicable to the resist mask 190R.

[0299] The resist mask 190G is placed in a position that overlaps with the conductive layer 152G.

[0300] Next, as shown in Figure 7(B), a portion of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. After that, the resist mask 190G is removed. Next, the mask layer 159G is used as a mask to remove a portion of the sacrificial film 158Gf to form the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as a hard mask to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0301] As a result, as shown in Figure 7(B), the laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. The mask layer 159R and the conductive layer 152B are exposed.

[0302] Next, it is preferable to perform a hydrophobic treatment on the conductive layer 152B, for example. During processing of the organic compound film 103Gf, the surface state of the conductive layer 152B may change to hydrophilic. For example, by performing a hydrophobic treatment on the conductive layer 152B, the adhesion between the conductive layer 152B and the layer formed in a later process (in this case, the organic compound layer 103B) can be improved, and film peeling can be suppressed. However, the hydrophobic treatment is not required.

[0303] Next, as shown in Figure 7(C), an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layer 152B, the mask layer 159R, the mask layer 159G, and the insulating layer 175.

[0304] The organic compound film 103Bf can be formed by the same method as that used to form the organic compound film 103Rf. Furthermore, the organic compound film 103Bf can have the same structure as the organic compound film 103Rf.

[0305] Next, as shown in Figure 7(C), a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are formed in order on the organic compound film 103Bf and the mask layer 159R, respectively. After that, the resist mask 190B is formed. The materials and formation methods for the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190B are the same as those applicable to the resist mask 190R.

[0306] The resist mask 190B is placed in a position that overlaps with the conductive layer 152B.

[0307] Next, as shown in Figure 7(D), a portion of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. After that, the resist mask 190B is removed. Next, the mask layer 159B is used as a mask to remove a portion of the sacrificial film 158Bf to form the sacrificial layer 158B. Next, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0308] As a result, as shown in Figure 7(D), the laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the mask layers 159R and 159G are exposed.

[0309] Furthermore, it is preferable that the sides of the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B are perpendicular or approximately perpendicular to the surface to be formed. For example, it is preferable that the angle between the surface to be formed and these sides be 60 degrees or more and 90 degrees or less.

[0310] As described above, the distance between two adjacent organic compound layers 103R, 103G, and 103B formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, this distance can be defined, for example, by the distance between two adjacent opposing ends of organic compound layers 103R, 103G, and 103B. By narrowing the distance between the island-like organic compound layers in this way, a display device with high resolution and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes between adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. It is preferable that the distance between the first electrodes between adjacent light-emitting devices is 2 μm or more and 5 μm or less.

[0311] Next, as shown in Figure 8(A), it is preferable to remove the mask layer 159R, mask layer 159G, and mask layer 159B. Depending on subsequent processes, sacrificial layers 158R, 158G, 158B, mask layer 159R, mask layer 159G, and mask layer 159B may remain in the display device. By removing the mask layer 159R, mask layer 159G, and mask layer 159B at this stage, it is possible to suppress the remaining mask layer 159R, mask layer 159G, and mask layer 159B in the display device. For example, when conductive materials are used for the mask layer 159R, mask layer 159G, and mask layer 159B, removing the mask layer 159R, mask layer 159G, and mask layer 159B in advance can suppress the generation of leakage current and the formation of capacitance due to the remaining mask layer 159R, mask layer 159G, and mask layer 159B.

[0312] In this embodiment, the case where mask layers 159R, 159G, and 159B are removed is described as an example, but mask layers 159R, 159G, and 159B do not necessarily have to be removed. For example, if mask layers 159R, 159G, and 159B contain the aforementioned material that has light-shielding properties against ultraviolet rays, it is preferable to proceed to the next step without removing them, as this protects the organic compound layer from ultraviolet rays.

[0313] The same method as the mask layer processing method can be used for the mask layer removal process. In particular, by using a wet etching method, the damage inflicted on the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B when removing the mask layer can be reduced compared to when using a dry etching method.

[0314] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohols include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0315] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B, as well as water adsorbed on the surfaces of organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0316] Next, as shown in Figure 8(B), an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103R, organic compound layer 103G, organic compound layer 103B, sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B.

[0317] As described later, an insulating film is formed in contact with the upper surface of the inorganic insulating film 125f, which will later become the insulating layer 127. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has high affinity for the material used for the insulating film (for example, a photosensitive resin composition containing acrylic resin). To improve this affinity, it is preferable to hydrophobize (or increase the hydrophobicity of) the upper surface of the inorganic insulating film 125f by performing a surface treatment. For example, it is preferable to perform the treatment using a silylation agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion. The aforementioned hydrophobic treatment may also be performed as the surface treatment.

[0318] Next, as shown in Figure 8(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0319] The inorganic insulating film 125f and the insulating film 127f are preferably formed using a method that causes minimal damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed in contact with the sides of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is preferable that the inorganic insulating film 125f is formed using a method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than the insulating film 127f.

[0320] Furthermore, the inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, respectively. In addition, by increasing the substrate temperature during film formation of the inorganic insulating film 125f, it is possible to create a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even with a thin film thickness.

[0321] The substrate temperature when forming the inorganic insulating film 125f and insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0322] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0323] The inorganic insulating film 125f is preferably formed using, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and allow for the formation of a highly covering film. For example, it is preferable to form an aluminum oxide film as the inorganic insulating film 125f using the ALD method.

[0324] In addition, the inorganic insulating film 125f may be formed using sputtering, CVD, or PECVD, which have faster deposition rates than the ALD method. This allows for the highly productive manufacture of reliable display devices.

[0325] The insulating film 127f is preferably formed using the wet film formation method described above. The insulating film 127f is preferably formed using a photosensitive material, for example, by spin coating, and more specifically, it is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0326] The insulating film 127f is preferably formed using a resin composition having, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also called constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates acid upon irradiation with light and a compound that generates acid upon heating can be used. The resin composition may further contain one or more of a photosensitive agent, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0327] Furthermore, it is preferable to perform a heat treatment (also called pre-baking) after the formation of the insulating film 127f. This heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50°C to 200°C, more preferably 60°C to 150°C, and even more preferably 70°C to 120°C. This allows for the removal of solvent contained in the insulating film 127f.

[0328] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. Here, if a positive-type photosensitive resin composition containing acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated to the area where the insulating layer 127 will not be formed in a later step. The insulating layer 127 is formed in the area sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. If a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated to the area where the insulating layer 127 will be formed.

[0329] The width of the insulating layer 127 to be formed later can be controlled by the exposure area of ​​the insulating film 127f. In this embodiment, the insulating layer 127 is processed so that it has a portion that overlaps with the upper surface of the conductive layer 151.

[0330] The light used for exposure preferably includes the i-line (wavelength 365 nm). Furthermore, the light used for exposure may also include at least one of the g-line (wavelength 436 nm) and the h-line (wavelength 405 nm).

[0331] Here, by providing an oxygen barrier insulating layer (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) and the inorganic insulating film 125f, the diffusion of oxygen into the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B can be reduced. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layer may become excited, and their reaction with oxygen contained in the atmosphere may be promoted. More specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, oxygen may bind to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on an island-like organic compound layer, the binding of oxygen in the atmosphere to the organic compounds contained in the organic compound layer can be reduced.

[0332] Next, as shown in Figure 9(A), development is performed to remove the exposed area of ​​the insulating film 127f and form an insulating layer 127a. The insulating layer 127a is formed in the region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and in the region surrounding the conductive layer 152C. Here, when acrylic resin is used for the insulating film 127f, an alkaline solution can be used as the developer, for example, TMAH can be used.

[0333] Next, the residue (so-called scum) from the development process may be removed. For example, the residue can be removed by ashing using oxygen plasma.

[0334] Furthermore, etching may be performed to adjust the surface height of the insulating layer 127a. The insulating layer 127a may be processed, for example, by ashing using oxygen plasma. Also, even when a non-photosensitive material is used as the insulating film 127f, the surface height of the insulating film 127f can be adjusted, for example, by ashing.

[0335] Next, as shown in Figure 9(B), etching is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and thin the film thickness of parts of the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B. As a result, the inorganic insulating layer 125 is formed beneath the insulating layer 127a. In addition, the surfaces of the thinned portions of the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B are exposed. In the following, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0336] The first etching process can be carried out by dry etching or wet etching. It is preferable that the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B, as this allows the first etching process to be performed in a single step.

[0337] By using the insulating layer 127a, which has a tapered side surface, as a mask for etching, the sides of the inorganic insulating layer 125, and the upper edges of the sides of the sacrificial layers 158R, 158G, and 158B can be made tapered relatively easily.

[0338] When performing dry etching, it is preferable to use a chlorine-based gas. As chlorine-based gases, Cl2, BCl3, SiCl4, and CCl4 can be used individually or in mixtures of two or more gases. In addition, oxygen gas, hydrogen gas, helium gas, and argon gas can be added to the above chlorine-based gases individually or in mixtures of two or more gases as appropriate. By using dry etching, regions with thin film thickness in sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0339] As the dry etching apparatus, a dry etching apparatus having a high-density plasma source can be used. A dry etching apparatus having a high-density plasma source can be, for example, an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used. The capacitively coupled plasma etching apparatus having parallel plate electrodes may be configured to apply a high-frequency voltage to one electrode of the parallel plate electrodes. Alternatively, it may be configured to apply multiple different high-frequency voltages to one electrode of the parallel plate electrodes. Alternatively, it may be configured to apply a high-frequency voltage of the same frequency to each of the parallel plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel plate electrodes.

[0340] Furthermore, when dry etching is performed, by-products generated during dry etching may accumulate on the upper and side surfaces of the insulating layer 127a. As a result, components contained in the etching gas, components contained in the inorganic insulating film 125f, and components contained in the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B may be present in the insulating layer 127 after the display device is completed.

[0341] Furthermore, it is preferable to perform the first etching process by wet etching. By using the wet etching method, damage to the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B can be reduced compared to when the dry etching method is used. For example, wet etching can be performed using an alkaline solution. For example, TMAH, an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, wet etching can be performed using a paddle method. It is preferable that the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B, as the above etching process can be performed in a single step.

[0342] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the film thickness is reduced. By leaving the corresponding sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B in this manner, it is possible to prevent damage to the organic compound layers 103R, 103G, and 103B in subsequent processing steps.

[0343] Next, it is preferable to expose the entire substrate to visible light or ultraviolet light and irradiate the insulating layer 127a. The energy density of this exposure is 0 mJ / cm². 2 Even larger, 800 mJ / cm 2 The following is preferable: 0 mJ / cm 2 Larger, 500 mJ / cm 2 The following is more preferable: Performing such exposure after development may improve the transparency of the insulating layer 127a. In addition, it may be possible to lower the substrate temperature required for the heat treatment in a later process to deform the insulating layer 127a into a tapered shape.

[0344] Here, the presence of oxygen barrier insulating layers (e.g., an aluminum oxide film) as sacrificial layers 158R, 158G, and 158B reduces the diffusion of oxygen into organic compound layers 103R, 103G, and 103B. When an organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layer may become excited, and their reaction with oxygen in the atmosphere may be promoted. More specifically, when an organic compound layer is irradiated with light (visible light or ultraviolet light) in an oxygen-containing atmosphere, oxygen may bind to the organic compounds in the organic compound layer. By providing sacrificial layers 158R, 158G, and 158B on an island-like organic compound layer, the binding of oxygen in the atmosphere to the organic compounds contained in the organic compound layer can be reduced.

[0345] Next, a heat treatment (also called post-bake) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side surface (Figure 9(C)). This heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere may be an atmospheric atmosphere or an inert gas atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced pressure atmosphere. It is preferable to use a higher substrate temperature for the heat treatment in this step than for the heat treatment after the formation of the insulating film 127f (pre-bake). This improves the adhesion between the insulating layer 127 and the inorganic insulating layer 125, and also improves the corrosion resistance of the insulating layer 127.

[0346] In the first etching process, by not completely removing sacrificial layers 158R, 158G, and 158B, and leaving them in a thinned state, it is possible to prevent damage and degradation of organic compound layers 103R, 103G, and 103B during the heat treatment. Therefore, the reliability of the light-emitting device can be improved.

[0347] Furthermore, depending on the material of the insulating layer 127, as well as the post-bake temperature, time, and atmosphere, a concave curved shape may be formed on the side surface of the insulating layer 127. For example, the higher the temperature or the longer the post-bake conditions, the more likely the shape of the insulating layer 127 is to change, and a concave curved shape may be formed.

[0348] Next, as shown in Figure 10(A), etching is performed using the insulating layer 127 as a mask to remove a portion of the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B. In some cases, a portion of the inorganic insulating layer 125 may also be removed. As a result, openings are formed in the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B, respectively, exposing the upper surfaces of the organic compound layer 103R, organic compound layer 103G, organic compound layer 103B, and conductive layer 152C. In the following, the etching process using the insulating layer 127 as a mask may be referred to as the second etching process.

[0349] The edges of the inorganic insulating layer 125 are covered with the insulating layer 127. Figure 10(A) also shows an example where the insulating layer 127 covers a portion of the edge of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process), while the tapered portion formed by the second etching process is exposed.

[0350] If the first etching process is omitted and the inorganic insulating layer 125 and the mask layer are etched together after post-baking, side etching may cause the inorganic insulating layer 125 and the mask layer beneath the edges of the insulating layer 127 to disappear, forming a cavity. This cavity can cause unevenness on the surface forming the common electrode 155, making it easier for the common electrode 155 to break down. Even if the inorganic insulating layer 125 and the mask layer are side-etched and a cavity is formed in the first etching process, the insulating layer 127 can fill the cavity by performing post-baking afterward. Subsequently, in the second etching process, the mask layer, which is now thinner, is etched, resulting in less side etching and making it less likely for a cavity to form. If a cavity does form, it can be made extremely small. As a result, the surface forming the common electrode 155 can be made flatter.

[0351] Furthermore, the insulating layer 127 may cover the entire edge of the sacrificial layer 158G. For example, the edge of the insulating layer 127 may sag and cover the edge of the sacrificial layer 158G. Also, for example, the edge of the insulating layer 127 may be in contact with at least one upper surface of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As mentioned above, if the insulating layer 127a is not exposed after development, the shape of the insulating layer 127 may change easily.

[0352] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B can be reduced compared to using the dry etching method. Wet etching can be performed using an alkaline solution such as TMAH.

[0353] On the other hand, when performing a second etching process using a wet etching method, if there are gaps between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and at the interface between the organic compound layer 103 and the insulating layer 175 due to adhesion problems between the organic compound layer 103 and other layers, the chemical used in the second etching process may penetrate these gaps and come into contact with the pixel electrodes. If the chemical comes into contact with both the conductive layer 151 and the conductive layer 152, the conductive layer with the lower natural potential may be corroded by galvanic corrosion. For example, if aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, the conductive layer 152 may be corroded. As a result, the yield of the display device may decrease. Furthermore, the reliability of the display device may decrease.

[0354] As described above, by forming the conductive layer 152 so as to cover the upper and side surfaces of the conductive layer 151, even if there are gaps between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and at the interface between the organic compound layer 103 and the insulating layer 175, it is possible to prevent the chemical solution from coming into contact with the conductive layer 151 during the second etching process. This prevents corrosion of the pixel electrodes, and for example, corrosion of the conductive layer 152.

[0355] Furthermore, by forming an insulating layer 156 that overlaps with the side surface of the conductive layer 151, and forming a conductive layer 152 that covers the conductive layer 151 and the insulating layer 156, it is possible to prevent the conductive layer 152 from being chipped, thus preventing the chemical solution from coming into contact with the conductive layer 151 during, for example, the second etching process. This prevents corrosion of the pixel electrodes and, for example, corrosion of the conductive layer 152.

[0356] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to suppress connection failures in the common electrode 155 between each light-emitting device due to the divided portion, and an increase in electrical resistance due to locally thin film thickness. As a result, the display device according to one embodiment of the present invention can improve the display quality.

[0357] Furthermore, after exposing a portion of the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B, further heat treatment is performed. This heat treatment can remove water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. In addition, this heat treatment may change the shape of the insulating layer 127. Specifically, the insulating layer 127 may spread to cover at least one of the following: the edge of the inorganic insulating layer 125, the edge of the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B, and the upper surface of the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B.

[0358] If the temperature of the heat treatment is too low, it will not be possible to sufficiently remove water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. Conversely, if the temperature of the heat treatment is too high, deterioration of the organic compound layer 103 and excessive changes in the shape of the insulating layer 127 may occur. Therefore, the heat treatment is preferably performed at a temperature higher than the temperature at which water desorbs from the organic compound layer 103, lower than the glass transition temperature of the organic compounds contained in the organic compound layer 103, and more preferably lower than the glass transition temperature of the organic compounds contained on the upper surface of the organic compound layer 103. Specifically, it is preferable to perform the treatment at a substrate temperature of 80°C to 130°C, preferably 90°C to 120°C, more preferably 100°C to 120°C, and even more preferably 100°C to 110°C. The heating atmosphere may be an atmospheric atmosphere or an inert gas atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced pressure atmosphere, but a reduced pressure atmosphere is preferable in order to prevent the water desorbed from the organic compound layer 103 from being re-adsorbed.

[0359] This heat treatment effectively removes water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, without causing degradation of the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B, or excessive changes in the shape of the insulating layer 127. This prevents a decrease in the characteristics of the light-emitting device.

[0360] Next, as shown in Figure 10(B), a common layer 104 and a common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by sputtering or vacuum deposition. The common layer 104 may be formed by deposition and the common electrode 155 by sputtering.

[0361] Next, as shown in Figure 10(C), a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by methods such as vacuum deposition, sputtering, CVD, or ALD.

[0362] Next, the display device can be manufactured by bonding the substrate 120 onto the protective layer 131 using the resin layer 122. As described above, in the method for manufacturing a display device according to one aspect of the present invention, an insulating layer 156 is provided so as to have an area that overlaps with the side surface of the conductive layer 151, and a conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This increases the yield of the display device and suppresses the occurrence of defects.

[0363] As described above, in the method for manufacturing a display device according to one aspect of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the organic compound layer 103B are formed not using a fine metal mask, but by processing after the film is deposited on one surface, so that the island-shaped layers can be formed with a uniform thickness. This makes it possible to realize a high-resolution display device or a display device with a high aperture ratio. Furthermore, even if the resolution or aperture ratio is high and the distance between subpixels is extremely short, it is possible to suppress contact between the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B in adjacent subpixels. Therefore, it is possible to suppress the generation of leakage current between subpixels. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. Moreover, even a display device having a tandem type light-emitting device manufactured using photolithography can be provided with good characteristics.

[0364] (Embodiment 4) This embodiment describes a display device according to one aspect of the present invention.

[0365] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, and as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0366] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television equipment, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0367] [Display Module] Figure 11(A) shows a perspective view of the display module 280. The display module 280 includes a display device 100A and an FPC 290.

[0368] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0369] Figure 11(B) shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of multiple wires.

[0370] The pixel section 284 has a plurality of pixels 284a arranged periodically. A magnified view of one pixel 284a is shown on the right side of Figure 11(B). Various configurations described in the previous embodiment can be applied to the pixel 284a. Figure 11(B) shows an example where the pixel 284a has a configuration similar to the pixel 178 shown in Figure 3.

[0371] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0372] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a can be configured to have three circuits that control the light emission of a single light-emitting device. For example, a single pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active-matrix type display device.

[0373] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0374] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0375] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a are arranged in the display section 281 with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and a resolution of 20000 ppi or less, or 30000 ppi or less.

[0376] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as HMDs or AR devices such as glasses. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, and a highly immersive display can be achieved. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0377] [Display device 100A] The display device 100A shown in Figure 12(A) includes a substrate 301, light-emitting devices 130R, 130G, 130B, a capacitor 240, and a transistor 310.

[0378] Substrate 301 corresponds to substrate 291 in Figures 11(A) and 11(B). Transistor 310 is a transistor having a channel formation region in substrate 301. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used as substrate 301. Transistor 310 has a part of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of substrate 301 doped with impurities and functions as a source or drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0379] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0380] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0381] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0382] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0383] An insulating layer 255 is provided covering the capacitance 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. Figure 12(A) shows an example in which light-emitting devices 130R, 130G, and 130B have the layered structure shown in Figure 6(A). An insulator is provided in the region between adjacent light-emitting devices. For example, in Figure 12(A), an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0384] An insulating layer 156R is provided so as to have a region that overlaps with the side surface of the conductive layer 151R of the light-emitting device 130R, an insulating layer 156G is provided so as to have a region that overlaps with the side surface of the conductive layer 151G of the light-emitting device 130G, and an insulating layer 156B is provided so as to have a region that overlaps with the side surface of the conductive layer 151B of the light-emitting device 130B. In addition, a conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0385] The conductive layers 151R, 151G, and 151B are electrically connected to either the source or drain of the transistor 310 by the insulating layers 243, 255, 174, and a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0386] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device 130 to the substrate 120 can be found in Embodiment 3. The substrate 120 corresponds to the substrate 292 in Figure 11(A).

[0387] Figure 12(B) shows a modified version of the display device 100A shown in Figure 12(A). The display device shown in Figure 12(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has a region that overlaps with one of the colored layers 132R, 132G, and 132B. In the display device shown in Figure 12(B), the light-emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0388] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be appropriately combined.

[0389] (Embodiment 5) This embodiment describes an electronic device according to one aspect of the present invention.

[0390] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is highly reliable and can be easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0391] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0392] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0393] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0394] The electronic device of this embodiment may have sensors (including those with functions to measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0395] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0396] Figures 13(A) to 13(D) illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0397] The electronic device 700A shown in Figure 13(A) and the electronic device 700B shown in Figure 13(B) each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0398] A display device according to one embodiment of the present invention can be applied to the display panel 751. Therefore, a highly reliable electronic device can be made.

[0399] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0400] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0401] The communications unit has a wireless communication device, which can supply, for example, a video signal. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable for supplying video signals and power potential can be connected.

[0402] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0403] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0404] Various types of touch sensors can be used in the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, or optical sensors can be employed. In particular, it is preferable to apply capacitive or optical sensors to the touch sensor module.

[0405] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving element. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0406] The electronic device 800A shown in Figure 13(C) and the electronic device 800B shown in Figure 13(D) each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0407] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, a highly reliable electronic device can be made.

[0408] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0409] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0410] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0411] The attachment portion 823 allows the user to attach the electronic device 800A or electronic device 800B to their head. Note that, for example, in Figure 13(C), it is illustrated as having a shape similar to the temple (joint, or arm, etc.) of eyeglasses, but is not limited to this. The attachment portion 823 only needs to be wearable by the user; for example, it may be in the shape of a helmet or a band.

[0412] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0413] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0414] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0415] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0416] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 13(A) has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 13(C) has a function for transmitting information to the earphone 750 through its wireless communication function.

[0417] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 13(B) has an earphone section 727. For example, the earphone section 727 and the control unit can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control unit may be located inside the housing 721 or the mounting section 723.

[0418] Similarly, the electronic device 800B shown in Figure 13(D) has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0419] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a microphone or other sound-collecting device can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0420] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0421] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0422] The electronic device 6500 shown in Figure 14(A) is a portable information terminal that can be used as a smartphone.

[0423] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0424] A display device according to one embodiment of the present invention can be applied to the display unit 6502. Therefore, a highly reliable electronic device can be made.

[0425] Figure 14(B) is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0426] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, and battery 6518 are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0427] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0428] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0429] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, an electronic device with a narrow bezel can be realized.

[0430] Figure 14(C) shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7171. Here, the housing 7171 is shown supported by a stand 7173.

[0431] A display device according to one embodiment of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be made.

[0432] The television device 7100 shown in Figure 14(C) can be operated using the operation switches on the housing 7171 and a separate remote control unit 7151. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7151 may have a display unit that displays information output from the remote control unit 7151. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7151.

[0433] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0434] Figure 14(D) shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0435] A display device according to one embodiment of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be made.

[0436] Figures 14(E) and 14(F) show examples of digital signage.

[0437] The digital signage 7300 shown in Figure 14(E) comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may have LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0438] Figure 14(F) shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0439] In Figures 14(E) and 14(F), a display device according to one embodiment of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be made.

[0440] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0441] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000, but also allows users to operate it intuitively. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0442] Furthermore, as shown in Figures 14(E) and 14(F), it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0443] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0444] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be appropriately combined. [Examples]

[0445] (Synthesis Example 1) This example describes the physical properties and synthesis method of an organic compound according to one embodiment of the present invention. Specifically, the synthesis method of 8,8'-pyridine-2,6-diyl-bis(5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine) (abbreviated as 2,6tip2Py), shown by structural formula (100) in Embodiment 1, will be described. The structure of 2,6tip2Py is shown below.

[0446] [ka]

[0447] <Synthesis of 2,6tip2Py> 1.3 g (5.5 mmol) of 2,6-dibromopyridine, 1.7 g (16 mmol) of potassium-tert-butoxide (abbreviated as KOtBu), 0.21 g (0.33 mmol) of (±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthyl (abbreviated as rac-BINAP), and 50 mg (0.22 mol) of palladium acetate (abbreviated as Pd(OAc)2) were added to a 200 mL three-necked flask. 1.5 g (12 mmol) of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine was then added to the flask, and the flask was purged with nitrogen. 19 mL of anhydrous toluene was added to this mixture, and the flask was degassed under reduced pressure, followed by purging with nitrogen. The mixture was stirred at 90°C for 8 hours and then allowed to cool to room temperature. After the reaction was complete, the reaction mixture was filtered by suction to obtain the filtrate. Ethyl acetate was added to the obtained solid and the mixture was heated and stirred at 70°C for 2 hours. Then, the insoluble matter was removed by suction filtration, and the filtrate was concentrated under reduced pressure. The obtained solid was recrystallized using a mixed solvent of ethyl acetate and hexane to obtain a gray solid (1.1 g, yield 64%). The synthesis scheme for 2,6tip2Py is shown in the following formula (a-1).

[0448] [ka]

[0449] The obtained gray solid (1.1 g) was purified by sublimation using the train sublimation method under conditions of argon flow rate of 5 mL / min, pressure of 2.9 Pa, and heating temperature of 190°C for 24 hours. As a result, the target product (0.64 g, recovery rate 56%) was obtained.

[0450] Nuclear magnetic resonance spectroscopy of 2,6tip2Py after sublimation purification ( 1 The 1H NMR spectrum is shown in Figure 15. 1 The results of the 1H NMR measurement are shown below. From these results, it was confirmed that 2,6tip2Py was obtained.

[0451] 1 H NMR(CDCl3,300MHz):δ=8.02(d,J=8.1Hz,2H),7.61(t,J=8.1Hz,1H),6.84(d,J=1.5Hz, 2H),6.65(d,J=1.5Hz,2H),4.22-4.18(m,4H),4.01(t,J=6.0Hz,4H),2.26-2.16(m,4H).

[0452] <Emission and absorption spectrum measurement> Next, the ultraviolet-visible absorption spectrum (hereinafter simply referred to as "absorption spectrum") and emission spectrum of a 2,6tip2Py toluene solution were measured. A UV-Vis spectrophotometer (JASCO Corporation, Model V770) was used to measure the absorption spectrum. A spectrofluorometer (JASCO Corporation, Model FP8600) was used to measure the emission spectrum. The measurement results of the absorption and emission spectra of the obtained toluene solution are shown in Figure 16. The horizontal axis represents wavelength, and the vertical axis represents absorption intensity and emission intensity.

[0453] As shown in Figure 16, the toluene solution of 2,6tip2Py showed an absorption peak around 324 nm and an emission wavelength peak around 361 nm. [Examples]

[0454] (Synthesis Example 2) In this example, we will describe the synthesis method of 8,8'-(9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine) (abbreviated as 2,7tip2SF), which is shown by structural formula (101) in Embodiment 1. The structure of 2,7tip2SF is shown below.

[0455] [ka]

[0456] <2,7tip2SF synthesis> 2.6 g (5.5 mmol) of 2,7-dibromo-9,9'-spirobi[9H-fluorene], 1.7 g (16 mmol) of potassium-tert-butoxide (abbreviated as KOtBu), 0.20 g (0.33 mmol) of (±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthyl (abbreviated as rac-BINAP), and 52 mg (0.22 mol) of palladium acetate (abbreviated as Pd(OAc)2) were added to a 200 mL three-necked flask. 1.5 g (12 mmol) of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine was then added, and the flask was purged with nitrogen. 19 mL of anhydrous toluene was added to this mixture, the flask was degassed under reduced pressure, and then purged with nitrogen. The mixture was stirred at 90°C for 8 hours and then allowed to cool to room temperature. After the reaction was complete, the reaction mixture was filtered by suction to obtain a solid. The obtained solid was washed with methanol and chloroform to remove insoluble matter. The resulting filtrate was concentrated under reduced pressure. The obtained solid was recrystallized with ethyl acetate and methanol to obtain a gray solid (1.2 g, yield 39%). The synthesis scheme of 2,7tip2SF is shown in formula (b-1) below.

[0457] [ka]

[0458] The obtained gray solid (1.2 g) was purified by sublimation using the train sublimation method under conditions of argon flow rate of 5 mL / min, pressure of 3.1 Pa, and heating temperature of 285°C for 17 hours. As a result, the target substance was obtained as a pale yellow solid (0.33 g, recovery rate 28%).

[0459] Sublimation-purified 2,7tip2SF 1 The 1H NMR spectrum is shown in Figure 17. 1 The results of the 1H NMR measurement are shown below. From these results, it was confirmed that 2,7tip2SF was obtained.

[0460] 1 H NMR(CDCl3,300MHz):δ=7.84-7.81(m,4H),7.73(d,J=7.9Hz,2H),7.34(td,J=7.5Hz,1.1Hz,2H),7.10(td,J=7.5Hz,1.1Hz,2H),6.79(d,J=7. 9Hz,2H),6.66(d,J=2.0Hz,2H),6.50(d,J=1.5Hz,2H),6.39(d,J=2.0Hz,2H),3.87(t,J=6.0Hz,4H),3.48(t,J=5.7Hz,4H),2.13-2.05(m,4H).

[0461] <Emission and absorption spectrum measurement> Next, the ultraviolet-visible absorption spectrum (hereinafter simply referred to as "absorption spectrum") and emission spectrum of a toluene solution of 2,7tip2SF were measured. A UV-Vis spectrophotometer (V770, JASCO Corporation) was used to measure the absorption spectrum. A spectrofluorometer (FP8600, JASCO Corporation) was used to measure the emission spectrum. The measurement results of the absorption and emission spectra of the obtained toluene solution are shown in Figure 18. The horizontal axis represents wavelength, and the vertical axis represents absorption intensity and emission intensity.

[0462] As shown in Figure 18, the toluene solution of 2,7tip2SF showed an absorption peak around 359 nm and an emission wavelength peak around 376 nm. [Examples]

[0463] In this example, the solubility of the organic compound of one aspect of the present invention will be described using the organic compounds synthesized in Example 1 and Example 2. The solubility test of this example was carried out at 1 atmosphere and room temperature (RT).

[0464] <Visual solubility test of 2,6tip2Py> 1.21 mg of 2,6tip2Py was placed in a sample bottle (volume 110 mL), and 10 mL of water was added. This mixture was irradiated with ultrasonic waves for 1 minute. When visually checking for undissolved residue, a precipitate of white powder was confirmed. Another 10 mL of water was added, and after irradiating with ultrasonic waves for 1 minute and visually checking, a precipitate of white powder was confirmed. This was repeated until dissolution was visually confirmed.

[0465] A precipitate of white powder was confirmed until the total amount of water reached 100 mL. From this result, it was judged that it was impossible to measure by visual solubility test.

[0466] <Visual solubility test of 2,7tip2SF> 1.23 mg of 2,7tip2SF was placed in a sample bottle (volume 110 mL), and 10 mL of water was added. This mixture was irradiated with ultrasonic waves for 1 minute. When visually checking for undissolved residue, a precipitate of white powder was confirmed. Another 10 mL of water was added, and after irradiating with ultrasonic waves for 1 minute and visually checking, a precipitate of light yellow powder was confirmed. This was repeated until dissolution was visually confirmed.

[0467] A precipitate of light yellow powder was confirmed until the total amount of water reached 100 mL. From this result, it was judged that it was impossible to measure by visual solubility test.

[0468] (Reference Example 1) <Visual solubility test of hpp2Py> 50.2 mg of 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviated as hpp2Py), an organic compound according to one embodiment of the present invention, having a structure in which the imidazole ring in the guanidine skeleton of 2,6tip2Py is replaced with a hydropyrimidine ring, was placed in a sample vial (capacity 5 mL), and 1.0 mL of water was added. Visual inspection revealed that it was dissolved.

[0469] From the above results, it was found that the weight of hpp2Py that dissolves in 1.0 mL of water is 50.2 mg or more. The solubility of hpp2Py in water is 4.8 × 10⁻⁶ by weight fraction. -2 It can be converted to the above.

[0470] (Reference example 2) <Visual solubility test of 2,7 hpp2 SF> 1.16 mg of 1,1'-(9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviated as 2,7hpp2SF), an organic compound according to one embodiment of the present invention, having a structure in which the imidazole ring in the guanidine skeleton of 2,7tip2SF is replaced with a hydropyrimidine ring, was placed in a sample vial (capacity 20 mL) and 0.5 mL of water was added. The mixture was irradiated with ultrasound for 1 minute. Upon visual inspection for any undissolved particles, a precipitate of white powder was observed. Another 0.5 mL of water was added, and ultrasound irradiation was performed for 1 minute. Upon visual inspection, a precipitate of white powder was observed. This process was repeated until dissolution was confirmed visually.

[0471] A white powder precipitate was observed up to a total water volume of 3.0 mL. When an additional 0.5 mL of water was added and ultrasonic irradiation was performed, no white powder precipitate was observed.

[0472] From the above results, it was found that the weight of 2,7hpp2SF that dissolves in 1.0 mL of water is between 0.33 mg and less than 0.39 mg. The solubility of 2,7hpp2SF in water is 3.3 × 10⁻⁶ by weight fraction.-4 The above 3.9 × 10 -4 It can be converted to something less than [amount].

[0473] Since the solubility of 2,6tip2Py and 2,7tip2SF in water could not be calculated using the experimental method described above, the solubility was calculated using an alternative method: liquid chromatography-mass spectrometry (LC / MS analysis).

[0474] <Solubility test of 2,6tip2Py by LC / MS analysis> LC / MS analysis was performed using a Waters Acquity UPLC for LC (liquid chromatography) separation and a Waters Xevo G2 Tof MS for MS (mass spectrometry). For LC separation, an Acquity UPLC BEH C8 column (2.1 × 100 mm, 1.7 μm) was used. Mobile phase A was acetonitrile, and mobile phase B was a 0.1% formic acid aqueous solution. The sample injection volume was 5.0 μL. The photodiode array detector was set to a wavelength of 270 nm for the analysis.

[0475] 1 mg of 2,6tip2Py was placed in a 5 mL sample vial, 1 mL of chloroform was added, and sonication was performed for 5 minutes. After confirming that the solid was completely dissolved, this solution was diluted fivefold with acetonitrile to prepare a 200 mg / L solution. This solution was then diluted with acetonitrile to prepare solutions of 40 mg / L, 20 mg / L, and 10 mg / L. LC / MS analysis was performed using the prepared solutions, and a calibration curve was created using the peak area values ​​derived from 2,6tip2Py obtained for each concentration.

[0476] Next, the solubility of 2,6tip2Py in water was measured.

[0477] 1 mg of 2,6tip2Py was placed in a 5 mL sample bottle, 1 mL of water was added, and sonication was performed for 5 minutes. This mixture was filtered using a membrane filter to remove the solid, and the resulting filtrate was diluted 5-fold with acetonitrile. The resulting solution was analyzed by LC / MS.

[0478] From the calibration curve and signal intensity obtained by LC / MS analysis, it was determined that 0.018 mg of 2,6tip2Py dissolves in 1 mL of water. The solubility of 2,6tip2Py in water is 1.8 × 10⁻⁶ by weight fraction. -5 It can be converted to this.

[0479] <Solubility test of 2,7tip2SF by LC / MS analysis> 1 mg of 2,7tip2SF was placed in a 5 mL sample bottle, 1 mL of water was added, and sonication was performed for 5 minutes. The mixture was filtered using a membrane filter to remove the solid, and the resulting filtrate was diluted 5-fold with acetonitrile. The resulting solution was analyzed by LC / MS.

[0480] However, LC / MS analysis could not obtain the peak area value derived from 2,7tip2SF. This indicates that 2,7tip2SF is an organic compound insoluble in water.

[0481] From these results, it can be said that 2,6tip2Py and 2,7tip2SF are organic compounds with very low solubility in water. On the other hand, as shown as an example, hpp2Py and 2,7hpp2SF, which have a structure in which the imidazole ring in the guanidine skeleton of these organic compounds is replaced with a hydropyrimidine ring, showed high solubility in water. Therefore, it was found that a structure with a guanidine skeleton containing an imidazole ring is effective in reducing solubility in water.

[0482] Therefore, it has been found that an organic compound representing one aspect of the present invention, expressed by general formula (G1), can be suitably used in light-emitting devices (i.e., light-emitting devices processed by lithography) whose manufacturing process includes treatment with water or a water-based chemical solution. [Examples]

[0483] In this example, we will describe light-emitting devices 1 and 2, which are light-emitting devices using the organic compounds synthesized in Example 1 and Example 2. The structural formulas of the organic compounds used in light-emitting devices 1 and 2 are shown below.

[0484] [ka]

[0485] (Method for fabricating light-emitting device 1) First, an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviated as APC) was deposited on a glass substrate as a reflective electrode to a thickness of 100 nm by sputtering. Then, indium tin oxide (ITSO) containing silicon oxide was deposited as a transparent electrode to a thickness of 100 nm by sputtering, forming the first electrode 101. The electrode area was 4 mm². 2 The dimensions were set to (2mm x 2mm). The transparent electrode functions as an anode and, together with the reflective electrode, can be considered as the first electrode.

[0486] Next, as a pretreatment for forming a light-emitting device on the substrate, the substrate surface was washed with water, baked at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds.

[0487] Then, 10 -4 The substrate was introduced into a vacuum deposition apparatus where the internal pressure was reduced to approximately Pa. After heating in the heating chamber of the vacuum deposition apparatus at 170°C for 30 minutes, the substrate was allowed to cool for about 30 minutes.

[0488] Next, the substrate was fixed to a holder provided in the vacuum deposition apparatus so that the surface on which the first electrode was formed was facing downwards. A hole injection layer was then formed on the first electrode by co-depositing N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBBiF) (structural formula (i)) and an electron acceptor material (OCHD-003) containing fluorine with a molecular weight of 672, in a weight ratio of 1:0.03 (=PCBBiF:OCHD-003) to a thickness of 10 nm using a vapor deposition method.

[0489] A 60 nm layer of PCBBiF was deposited on the hole injection layer to form a first hole transport layer.

[0490] Next, on the first hole transport layer, 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflof[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm) (structural formula (ii)), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP) (structural formula (iii)), and [2-d3-methyl-(2-pyridinyl-κN A first light-emitting layer was formed by co-depositing benzofl[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)) (structural formula (iv)) at a weight ratio of 0.5:0.5:0.1 (=4,8mDBtP2Bfpm:βNCCP:Ir(ppy)2(mbfpypy-d3)) at a density of 40 nm.

[0491] Next, 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) (structural formula (v)) was deposited to a thickness of 10 nm, and then 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) (structural formula (vi)) was deposited to a thickness of 15 nm to form the first electron transport layer.

[0492] After the formation of the first electron transport layer, mPPhen2P and 2,6tip2Py, an organic compound according to one embodiment of the present invention represented by the above structural formula (100), were co-deposited at a weight ratio of 1:1 (=mPPhen2P:2,6tip2Py) to a thickness of 5 nm to form the first layer. Next, a third layer was formed between the first and second layers to facilitate electron transfer by depositing copper phthalocyanine (abbreviation: CuPc) (structural formula (vii)) to a thickness of 2 nm. Furthermore, PCBBiF and OCHD-003 were co-deposited at a weight ratio of 1:0.15 (=PCBBiF:OCHD-003) to a thickness of 10 nm to form the second layer, thereby forming an intermediate layer having the first layer, the third layer, and the second layer.

[0493] Next, a 40 nm layer of PCBBiF was deposited on the intermediate layer to form a second hole transport layer.

[0494] A second light-emitting layer was formed on the second hole transport layer by co-depositing 4,8mDBtP2Bfpm, βNCCP, and Ir(ppy)2(mbfpypy-d3) at a weight ratio of 0.5:0.5:0.1 (=4,8mDBtP2Bfpm:βNCCP:Ir(ppy)2(mbfpypy-d3)) at a thickness of 40 nm.

[0495] Subsequently, 2mPCCzPDBq was deposited to a thickness of 20 nm, and then mPPhen2P was deposited to a thickness of 20 nm to form a second electron transport layer.

[0496] An electron injection layer was formed on the second electron transport layer by co-depositing lithium fluoride (LiF) and ytterbium (Yb) at a volume ratio of 2:1 (=LiF:Yb) to a thickness of 1.5 nm. Finally, a second electrode was formed by co-depositing silver (Ag) and magnesium (Mg) at a volume ratio of 1:0.1 and a film thickness of 15 nm to fabricate the light-emitting device 1.

[0497] The second electrode is a semi-transparent / semi-reflective electrode having both light-reflecting and light-transmitting functions. The light-emitting device in this embodiment is a top-emission type that extracts light from the second electrode and is a tandem type light-emitting device. Furthermore, a 70 nm layer of 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) (structural formula (viii)) is deposited on the second electrode as a cap layer to improve extraction efficiency.

[0498] (Method for fabricating light-emitting device 2) Light-emitting device 2 differs from light-emitting device 1 in that 2,6tip2Py, which was used in the first intermediate layer of light-emitting device 1, is replaced with 2,7tip2SF, an organic compound according to one embodiment of the present invention represented by the above structural formula (101). That is, light-emitting device 2 was fabricated in the same manner as light-emitting device 1, except that the first layer was formed by co-depositing mPPhen2P and 2,7tip2SF at a weight ratio of 1:1 (=mPPhen2P:2,7tip2SF) at a thickness of 5 nm.

[0499] The element structures of light-emitting device 1 and light-emitting device 2 are summarized in the table below.

[0500] [Table 1]

[0501] The light-emitting devices 1 and 2 described above were sealed with a glass substrate in a glove box under a nitrogen atmosphere to prevent exposure to the atmosphere (application of a UV-curable sealant around the element, irradiation of only the sealant with UV light without irradiating the light-emitting devices, and heat treatment at 80°C for 1 hour under atmospheric pressure). After this, the initial characteristics of each light-emitting device were measured.

[0502] Figure 19 shows the luminance-current density characteristics of light-emitting device 1, Figure 20 shows the current efficiency-luminance characteristics, Figure 21 shows the luminance-voltage characteristics, Figure 22 shows the current-voltage characteristics, and Figure 23 shows the field emission spectrum. Figure 24 shows the luminance-current density characteristics, Figure 25 shows the current efficiency-luminance characteristics, Figure 26 shows the luminance-voltage characteristics, Figure 27 shows the current-voltage characteristics, and Figure 28 shows the field emission spectrum of light-emitting device 2. In addition, light-emitting device 2 has a current of 2mA (50mA / cm²). 2 Figure 29 shows the change in brightness with respect to driving time when a current of ) is applied and constant current driving is performed. 2 The main characteristics of the vicinity are shown in the table below. Brightness, CIE chromaticity, and field emission spectra were measured using a spectroradiometer (Topcon SR-UL1R) at room temperature.

[0503] [Table 2]

[0504] Figures 19 to 29 and the table above clearly show that light-emitting devices 1 and 2 are light-emitting devices with good light-emitting characteristics. [Examples]

[0505] In this example, we will describe light-emitting devices 3 and 4, which are light-emitting devices using the organic compounds synthesized in Examples 1 and 2. Note that the organic compounds used in light-emitting devices 3 and 4 are the same as those used in light-emitting devices 1 and 2, so their structural formulas are omitted.

[0506] (Method for fabricating light-emitting device 3) Light-emitting device 3 differs from light-emitting device 1 in that, in addition to using mPPhen2P and 2,6tip2Py in a weight ratio of 1:0.5 (=mPPhen2P:2,6tip2Py) in the first intermediate layer, it also undergoes processing and heat treatment using photolithography after the formation of the second electron transport layer. Otherwise, it was fabricated in the same manner as light-emitting device 1.

[0507] This section describes the processing and heat treatment using photolithography. After removing the substrate from the vacuum deposition apparatus and exposing it to air, a 30 nm thin layer of aluminum oxide was deposited using the ALD method with trimethylaluminum (TMA) as the precursor and water vapor as the oxidizing agent, forming the first sacrificial layer.

[0508] A composite oxide (IGZO) containing indium, gallium, zinc, and oxygen was deposited on the first sacrificial layer to a thickness of 50 nm by sputtering, thereby forming a second sacrificial layer.

[0509] A resist was formed on the second sacrificial layer using a photoresist, and a 3 μm wide slit was formed using lithography at a position 3.5 μm away from the end of the first electrode.

[0510] Specifically, a second sacrificial layer was fabricated using a chemical solution containing an aqueous phosphoric acid solution with a resist as a mask. Subsequently, a first sacrificial layer was fabricated using an etching gas containing fluoroform (CHF3) and helium (He) in a CHF3:He = 1:9 (flow rate ratio). After this, the second electron transport layer, second light-emitting layer, second hole transport layer, intermediate layer, first electron transport layer, first light-emitting layer, first hole transport layer, and hole injection layer were fabricated using an etching gas containing oxygen (O2).

[0511] After processing by photolithography, the second sacrificial layer and the first sacrificial layer were removed using a basic chemical solution with water as the solvent, exposing the second electron transport layer. Subsequently, 10 -4 A substrate was introduced into a vacuum deposition apparatus where the internal pressure was reduced to approximately Pa, and a heat treatment was performed at 110°C for 1 hour in the heating chamber within the vacuum deposition apparatus.

[0512] As described above, in photolithography processing and heat treatment, treatment is performed using water or a chemical solution with water as the solvent.

[0513] (Method for fabricating light-emitting device 4) Light-emitting device 4 differs from light-emitting device 2 in that the first intermediate layer of mPPhen2P and 2,7tip2SF used in 4 is in a weight ratio of 1:0.5 (=mPPhen2P:2,7tip2SF), and that after the formation of the second electron transport layer, it is processed by photolithography and heat treatment. Otherwise, it is manufactured in the same way as light-emitting device 2. The photolithography processing and heat treatment were performed in the same way as for light-emitting device 3.

[0514] The element structures of light-emitting devices 3 and 4 are summarized in the table below.

[0515] [Table 3]

[0516] The light-emitting devices 3 and 4 described above were sealed with a glass substrate in a glove box under a nitrogen atmosphere to prevent exposure to the atmosphere (application of a UV-curable sealant around the element, irradiation of only the sealant with UV light without irradiating the light-emitting devices, and heat treatment at 80°C for 1 hour under atmospheric pressure). After this, the initial characteristics of each light-emitting device were measured.

[0517] Figure 30 shows the luminance-current density characteristics of light-emitting device 3, Figure 31 shows the current efficiency-luminance characteristics, Figure 32 shows the luminance-voltage characteristics, Figure 33 shows the current-voltage characteristics, and Figure 34 shows the field emission spectrum. Figure 35 shows the luminance-current density characteristics, Figure 36 shows the current efficiency-luminance characteristics, Figure 37 shows the luminance-voltage characteristics, Figure 38 shows the current-voltage characteristics, and Figure 39 shows the field emission spectrum of light-emitting device 4. In addition, light-emitting device 4 has a current of 2mA (50mA / cm²). 2 Figure 40 shows the change in brightness with respect to driving time when a constant current is applied and driven. 2The main characteristics in the vicinity are shown in the following table. For the measurement of luminance, CIE chromaticity, and electroluminescence spectrum, a spectro-radiometer (Topcon Corporation, SR-UL1R) was used and the measurement was carried out at room temperature.

[0518]

Table 4

[0519] From FIGS. 30 to 40 and the above table, it became clear that the light-emitting devices 3 and 4 are light-emitting devices having good light-emitting characteristics. As described above, since the organic compound of one aspect of the present invention is an organic compound having low solubility in water, even when the manufacturing process includes treatment using water or a chemical solution having water as a solvent (that is, when processing by a lithography method) It was revealed that it can be suitably used.

Example

[0520] In this example, a method for synthesizing 8-(9,9'-spirobi[9H-fluorene]-2-yl)-5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine (abbreviation: tipSF), which is represented by the structural formula (113) in Embodiment 1, will be described. The structure of tipSF is shown below.

[0521]

Chemical formula

[0522] <Synthesis of tipSF> 18 g (46 mmol) of 2-bromo-9,9'-spirobio[9H-fluorene], 13 g (0.12 mol) of potassium-tert-butoxide (abbreviated as KOtBu), 1.7 g (2.7 mmol) of (±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthyl (abbreviated as rac-BINAP), and 7.0 g (57 mmol) of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine were added to a 300 mL three-necked flask, and the flask was purged with nitrogen. 150 mL of anhydrous toluene was added to this mixture, and the mixture was degassed by stirring under reduced pressure. 0.41 g (1.8 mmol) of palladium acetate (abbreviated as Pd(OAc)2) was added to this mixture, and the mixture was stirred at 90°C for 8 hours under a nitrogen stream. After stirring, the mixture was allowed to cool to room temperature. Insoluble matter in this mixture was removed by suction filtration, and the resulting filtrate was extracted with toluene. The extracted solution was then concentrated to obtain a residue. A small amount of toluene was added to the residue, and ultrasonic waves were applied. The solid was collected by suction filtration to obtain the target product as a pale yellow solid (11 g, yield 55%). The synthesis scheme for tipSF is shown in the following formula (c-1).

[0523] [ka]

[0524] The obtained pale yellow solid (11 g) was purified by sublimation using the train sublimation method. Sublimation purification was carried out by heating for 48 hours under conditions of argon flow rate of 10 mL / min, pressure of 6.0 Pa, and heating temperature of 225°C. As a result, the target substance was obtained as a white solid (6.7 g, recovery rate 61%).

[0525] tipSF after sublimation purification 1 The 1H NMR spectrum is shown in Figure 41. 1 The results of the 1H NMR measurement are shown below. From these results, it was confirmed that tipSF was obtained.

[0526] 1H NMR(CDCl3,300MHz):δ=7.92(dd,J=8.4,J=2.4Hz,1H),7.84-7.76(m,4H),7.3 8-7.29(m,3H),7.10(td,J=7.5,J=0.9Hz,2H),7.02(td,J=7.5,J=0.6Hz,1H), 6.76(d,J=7.2Hz,2H),6.67-6.64(m,2H),6.51(sd,J=1.5Hz,1H),6.45(sd,J= 1.8Hz,1H),3.87(t,J=6.15Hz,2H),3.50(t,J=5.7Hz,2H),2.14-2.06(m,2H). [Examples]

[0527] In this example, to identify which nitrogen atom of the substructure derived from 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine is bonded to pyridine in the product of the coupling reaction with an aryl halide, the results of X-ray crystallography of an organic compound according to one embodiment of the present invention are shown. Specifically, X-ray crystallography was performed on 2,6tip2Py, whose synthesis method was shown in Example 1, using a single-crystal X-ray structure analyzer (XtaLAB Synergy-Custom, manufactured by Rigaku Corporation).

[0528] First, the white solid 2,6tip2Py was recrystallized using hexane and ethyl acetate to obtain white prismatic crystals. The molecular structure of the obtained white prismatic crystals is shown in Figure 42, which is the result of X-ray crystal structure analysis. From Figure 42, it was confirmed that in 2,6tip2Py, the nitrogen atom at position 5 of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine is bonded to pyridine.

[0529] From the above X-ray crystal structure analysis results, 2,6tip2Py 1 The 6.84 ppm and 6.65 ppm peaks observed in the 1H NMR spectra (Figures 15(A) to 15(C)) were confirmed to be peaks of hydrogen atoms bonded to the 2nd and 3rd carbon atoms of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine.

[0530] The synthesis method for 2,7tip2SF, as shown in Example 2, is 1 In the 1H NMR spectra (Figures 17(A) to 17(C)), a peak is observed around 6.5 ppm, which is also presumed to be the peaks of hydrogen atoms bonded to the carbon atoms at positions 2 and 3 of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine. Therefore, it can be said that in 2,7tip2SF, the nitrogen atom at position 5 of 5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine is bonded to 9,9'-spirobi[9H-fluorene]. [Explanation of symbols]

[0531] 100A display device 100 display device 101 First electrode 101a First electrode 101b First electrode 102 Second electrode 103 Organic compound layer 103a Organic compound layer 103b Organic compound layer 103B Organic compound layer 103Bf Organic compound film 103G organic compound layer 103Gf organic compound film 103R Organic compound layer 103Rf Organic compound film 104 Common layer 110B subpixel 110G sub-pixels 110R sub-pixel 110 subpixels 111 Hole injection layer 111a Hole injection layer 111b Hole injection layer 112 Hole transport layer 112_1 First hole transport layer 112a_1 First hole transport layer 112b_1 First hole transport layer 112_2 Second hole transport layer 112a_2 Second hole transport layer 112b_2 Second hole transport layer 113_1 First light-emitting layer 113a_1 First light-emitting layer 113b_1 First light-emitting layer 113_2 Second light-emitting layer 113a_2 Second light-emitting layer 113b_2 Second light-emitting layer 113 Emitting layer 114 Electron transport layer 114_1 First electron transport layer 114a_1 First electron transport layer 114b_1 First electron transport layer 114_2 Second electron transport layer 114a_2 Second electron transport layer 114b_2 Second electron transport layer 115 Electron injection layer 116_1 The first mezzanine layer 116_2 The second metropolitan layer 116 Mesopotamia 116a Middle layer 116b Middle class 117 The second layer 117a Second layer 117b Second layer 118 The third layer 118a Third layer 118b Third Layer 119 The first layer 119a First layer 119b Layer 1 120 circuit boards 122 Resin layer 125f inorganic insulating film 125 Inorganic insulating layer 127a Insulating layer 127f insulating film 127 Insulating layer 130B Light-emitting device 130G Light-emitting Device 130R Light-emitting Device 130 Light-emitting devices 130a Light-emitting device 130b Light-emitting device 131 Protective layer 132B Colored layer 132G colored layer 132R colored layer 140 Connection part 141 areas 151a Conductive layer 151B Conductive layer 151b Conductive layer 151C conductive layer 151c conductive layer 151f Conductive film 151G conductive layer 151R conductive layer 151 Conductive layer 152a Conductive layer 152B Conductive layer 152b Conductive layer 152C conductive layer 152c conductive layer 152f Conductive film 152G conductive layer 152R conductive layer 152 Conductive layer 155 Common electrode 156B Insulating layer 156C insulating layer 156f insulating film 156G insulating layer 156R Insulating Layer 156 Insulating layer 158 layers of victims 158B Sacrifice Layer 158Bf sacrificial membrane 158G Sacrifice Layer 158Gf sacrificial membrane 158R Sacrifice Layer 158Rf sacrificial membrane 159B Mask layer 159Bf mask film 159G mask layer 159 Gf mask film 159R mask layer 159Rf mask membrane 171 Insulating layer 172 Conductive layer 173 Insulating layer 174 Insulating layer 175 Insulating layer 176 plug 177 pixel section 178 pixels 179 Conductive layer 190B Resist Mask 190G Resist Mask 190R Resist Mask 191 Resist Mask 240 capacity 241 Conductive layer 243 Insulating layer 245 Conductive layer 254 Insulating layer 255 Insulating layer 256 plug 261 Insulating layer 271 Plug 280 Display Modules 281 Display section 282 Circuit section 283a Pixel Circuit 283 Pixel Circuit Section 284a pixels 284 pixel section 285 Terminal section 286 Wiring section 290 FPC 291 circuit boards 292 circuit boards 301 circuit board 310 transistors 311 Conductive layer 312 Low resistance region 313 Insulating layer 314 Insulating layer 315 element isolation layer 501 First light-emitting unit 501a First light-emitting unit 501b First light-emitting unit 502 Second light-emitting unit 502a Second light-emitting unit 502b Second light-emitting unit 503 Third light-emitting unit 700A electronic equipment 700B Electronic equipment 721 cabinet 723 Mounting part 727 Earphone section 750 Earphones 751 Display Panel 753 Optical components 756 Display area 757 frames 758 Nose pads 800A electronic equipment 800B Electronic equipment 820 Display section 821 cabinet 822 Communications Department 823 Mounting part 824 Control Unit 825 Imaging Unit 827 Earphone section 832 Lens 6500 Electronic equipment 6501 enclosure 6502 Display section 6503 Power button 6504 button 6505 Speaker 6506 Mike 6507 Camera 6508 Light source 6510 Protective component 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed circuit board 6518 Battery 7000 Display 7100 Television equipment 7151 Remote control unit 7171 enclosure 7173 Stand 7200 Notebook Personal Computer 7211 enclosure 7212 Keyboard 7213 Pointing device 7214 External connection port 7300 Digital Signage 7301 enclosure 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 pillars 7411 Information terminal

Claims

1. An organic compound represented by the general formula (G1). 【Chemistry 1】 (However, in the organic compound represented by the above general formula (G1), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, R １ and R ２ Each of the following independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted amino group, an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, or a heteroaryl group having 2 to 13 carbon atoms forming a substituted or unsubstituted ring, n represents an integer from 1 to 6, and L is the group represented by the above general formula (L-1). Furthermore, in the above general formula (L-1), R ３ and R ４ Each of these independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, k represents an integer from 1 to 5, and when k is 2 or greater, each R ３ and R ４ They may be the same or different.

2. An organic compound represented by any one of the general formulas (G2-1) to (G2-3). 【Chemistry 2】 (However, in the organic compound represented by the general formula (G2-1) to the general formula (G2-3), Ar represents an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a substituted or unsubstituted ring, or a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a substituted or unsubstituted ring, and R １ , R ２ and R １１ to R ２８ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, and n represents an integer of 1 to 6.)

3. In claim 1 or claim 2, The aromatic hydrocarbon group having 6 to 30 carbon atoms forming the ring and the heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming the ring are organic compounds having a structure obtained by removing n hydrogen atoms from one of the rings of an aromatic hydrocarbon or a heteroaromatic hydrocarbon represented by the following structural formulas (Ar-1) to (Ar-27). 【Transformation 3】

4. An organic compound represented by the following structural formulas (100), (101), or (113). 【Chemistry 4】

5. A light-emitting device using an organic compound according to any one of claims 1, 2, and 4.

6. The light-emitting device according to claim 5, A light-emitting device having at least one of a transistor and a substrate.

7. The light-emitting device according to claim 6, An electronic device having at least one of a detection unit, an input unit, and a communication unit.

Images