Image sensor

Abstract

To provide an image sensor with improved sensitivity.SOLUTION: An image sensor comprises: a substrate which includes a pixel array region and an optical black region surrounding the pixel array region; a microlens provided above the pixel array region; a dummy lens provided above the optical black region; and a blocking bar provided above the optical black region. The blocking bar is longer than the microlens or the dummy lens. An upper surface of the blocking bar is curved.SELECTED DRAWING: Figure 3A

Description

[Technical field]

[0001] The present invention relates to image sensors, and more particularly to image sensors that include blocking bars. [Background technology]

[0002] An image sensor is a device that converts an optical image into an electrical signal. Image sensors are classified into CCD (Charge Coupled Device) type and CMOS (Complementary Metal Oxide Semiconductor) type. CMOS type image sensors are abbreviated as CIS (CMOS image sensor). CIS has multiple pixels arranged two-dimensionally. Each pixel contains a photodiode (PD). The photodiode converts incident light into an electrical signal. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent No. 10,170,511 Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention has been made in consideration of the above-mentioned conventional techniques, and an object of the present invention is to provide an image sensor with improved sensitivity. [Means for solving the problem]

[0005] In order to achieve the above object, an image sensor according to one aspect of the present invention comprises a substrate including a pixel array region and an optical black region surrounding the pixel array region, a microlens provided on the pixel array region, a dummy lens provided on the optical black region, and a blocking bar provided on the optical black region, wherein a length of the blocking bar is longer than a length of the microlens and a length of the dummy lens, and an upper surface of the blocking bar is curved.

[0006] In order to achieve the above object, an image sensor according to another aspect of the present invention comprises a substrate including a pixel array region and an optical black region surrounding the pixel array region, a microlens on the pixel array region, a dummy lens on the optical black region, and a blocking bar on the optical black region, wherein a length of the blocking bar is longer than a length of the microlens and a length of the dummy lens, and the blocking bar surrounds the microlens.

[0007] In order to achieve the above-mentioned object, an image sensor according to yet another aspect of the present invention comprises a substrate including a pixel array region and an optical black region surrounding the pixel array region, a color filter on the pixel array region, a black bulk filtering film on the optical black region, a lens film on the color filter and the black bulk filtering film, and a coating film on the lens film, the lens film including a base portion, a microlens on the base portion, a dummy lens on the base portion, and a blocking bar on the base portion, the length of the blocking bar being longer than the length of the microlens and the length of the dummy lens, the blocking bar surrounding the microlens, and the upper surface of the blocking bar being curved. Effect of the Invention

[0008] According to the image sensor of the present invention, by including a blocking bar on the optical black area, an adhesive material applied on the optical black area can be prevented from penetrating into the pixel array area, thereby preventing a decrease in sensitivity of the image sensor. [Brief description of the drawings]

[0009] [Figure 1] 1 is a block diagram illustrating an image sensor according to an embodiment; [Diagram 2] 1 is a circuit diagram of an active pixel sensor array of an image sensor according to one embodiment. [Figure 3A] FIG. 1 is a plan view of a first example of an image sensor in accordance with an embodiment. [Figure 3B] FIG. 3B is an enlarged view of region A in FIG. 3A. [Figure 3C] FIG. 3B is a cross-sectional view taken along line BB' in FIG. 3A. [Figure 3D] FIG. 3C is a cross-sectional view taken along line CC' in FIG. 3B. [Figure 3E] FIG. 3B is a perspective view for explaining a lens film of the image sensor shown in FIG. 3A. [Figure 4A] FIG. 2 is a plan view of a second example of an image sensor in accordance with an embodiment. [Figure 4B] FIG. 4B is a cross-sectional view taken along line DD' in FIG. 4A. [Diagram 5] FIG. 13 is a plan view of a third example of an image sensor in accordance with an embodiment. [Figure 6] FIG. 13 is a plan view of a fourth example of an image sensor according to an embodiment. [Figure 7] 1 is a cross-sectional view of an image sensor package according to an embodiment. [Figure 8A] 1 is a cross-sectional view of another example of an image sensor according to an embodiment. [Figure 8B] 1 is a cross-sectional view of another example of an image sensor according to an embodiment. [Figure 9] 1 is a cross-sectional view of yet another example of an image sensor according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific examples of the embodiments of the present invention will be described in detail with reference to the drawings.

[0011] 1 is a block diagram illustrating an image sensor according to an embodiment, and FIG 2 is a circuit diagram of an active pixel sensor array of the image sensor according to an embodiment.

[0012] Referring to FIG. 1, the image sensor includes an active pixel sensor array 1001, a row decoder 1002, a row driver 1003, a column decoder 1004, a timing generator 1005, a correlated double sampler (CDS) 1006, an analog to digital converter (ADC) 1007, and an input / output buffer 1008.

[0013] The active pixel sensor array 1001 includes a number of unit pixels arranged two-dimensionally, and converts optical signals into electrical signals. The active pixel sensor array 1001 is driven by a number of driving signals, such as a pixel selection signal, a reset signal, and a charge transfer signal, from a row driver 1003. The converted electrical signals are provided to a correlated double sampler 1006.

[0014] The row driver 1003 provides a number of driving signals to the active pixel sensor array 1001 for driving a number of unit pixels according to the result decoded by the row decoder 1002. When the unit pixels are arranged in a matrix, a driving signal is provided for each row.

[0015] A timing generator 1005 provides timing and control signals to the row decoder 1002 and the column decoder 1004 .

[0016] The correlated double sampler (CDS) 1006 receives, holds, and samples the electrical signal generated by the active pixel sensor array 1001. The correlated double sampler 1006 double samples a specific noise level and a signal level according to an electrical signal, and outputs a difference level corresponding to the difference between the noise level and the signal level.

[0017] An analog-to-digital converter (ADC) 1007 converts an analog signal corresponding to the difference level output from the correlated double sampler 1006 into a digital signal and outputs the digital signal.

[0018] The input / output buffer 1008 latches digital signals, and outputs the latched signals to a video signal processor (not shown) in sequence according to the results of decoding by the column decoder 1004 .

[0019] 1 and 2, an active pixel sensor array 1001 includes a plurality of unit pixels UP, which are arranged in a matrix shape. Each unit pixel UP includes a transmission transistor TX. Each unit pixel UP further includes logic transistors (RX, SX, DX). The logic transistor is a reset transistor RX, a selection transistor SX, or a source follower transistor DX. The transmission transistor TX includes a transmission gate TG. Each unit pixel UP further includes a photoelectric conversion region PD and a floating diffusion region FD. The logic transistors (RX, SX, DX) are shared among the plurality of unit pixels UP.

[0020] The photoelectric conversion region PD generates and accumulates photocharges in proportion to the amount of light incident from the outside. The photoelectric conversion region PD includes a photodiode, a phototransistor, a photogate, a pinned photodiode, and a combination thereof. The transfer transistor TX transfers the charge generated in the photoelectric conversion region PD to the floating diffusion region FD. The floating diffusion region FD transfers and cumulatively stores the charge generated in the photoelectric conversion region PD. The source follower transistor DX is controlled according to the amount of photocharge accumulated in the floating diffusion region FD.

[0021] The reset transistor RX periodically resets the charge stored in the floating diffusion region FD. The drain electrode of the reset transistor RX is connected to the floating diffusion region FD, and the source electrode is connected to a power supply voltage VDD. When the reset transistor RX is turned on, the power supply voltage VDD connected to the source electrode of the reset transistor RX is applied to the floating diffusion region FD. Therefore, when the reset transistor RX is turned on, the charge stored in the floating diffusion region FD is discharged and the floating diffusion region FD is reset.

[0022] The source follower transistor DX including the source follower gate electrode SF acts as a source follower buffer amplifier, amplifying the potential change in the floating diffusion region FD and outputting it to the output line Vout.

[0023] A selection transistor SX including a selection gate electrode SEL selects a unit pixel UP to be read out in a row unit. When the selection transistor SX is turned on, a power supply voltage VDD is applied to the drain electrode of the source follower transistor DX.

[0024] Fig. 3A is a plan view of a first example of an image sensor according to an embodiment. Fig. 3B is an enlarged view of region A of Fig. 3A. Fig. 3C is a cross-sectional view taken along line B-B' of Fig. 3A. Fig. 3D is a cross-sectional view taken along line C-C' of Fig. 3B. Fig. 3E is a perspective view for explaining a lens film of the image sensor shown in Fig. 3A.

[0025] 3A, 3B, 3C, 3D, and 3E, the image sensor includes a sensor chip 10. The sensor chip 10 includes a first substrate 100. The first substrate 100 has a plate shape extending along a plane defined by a first direction D1 and a second direction D2. The first direction D1 and the second direction D2 intersect with each other. As an example, the first direction D1 and the second direction D2 are horizontal directions perpendicular to each other.

[0026] The first substrate 100 is a semiconductor substrate. For example, the first substrate 100 is a silicon substrate, a germanium substrate, or a silicon-germanium substrate. The first substrate 100 includes a first conductive type impurity. For example, the first substrate 100 includes aluminum (Al), boron (B), indium (In), or gallium (Ga) as the first conductive type impurity. In one embodiment, the first substrate 100 is a silicon on insulator (SOI) substrate.

[0027] The first substrate 100 includes a pixel array region APS, a dummy region DMR, an optical black region OBR, and a pad region PDR. The pixel array region APS, the dummy region DMR, the optical black region OBR, and the pad region PDR are regions divided in a plane defined by a first direction D1 and a second direction D2. The dummy region DMR surrounds the pixel array region APS, the optical black region OBR surrounds the dummy region DMR and the pixel array region APS, and the pad region PDR surrounds the optical black region OBR, the dummy region DMR, and the pixel array region APS.

[0028] The first substrate 100 includes a front surface and a rear surface, which are opposite to each other. Light is incident on the rear surface of the first substrate 100.

[0029] The pixel array region APS of the first substrate 100 includes a plurality of pixel regions PX. The pixel regions PX of the pixel array region APS output photoelectric signals in response to incident light. The pixel regions PX are arranged in a plane within the pixel array region APS.

[0030] In an embodiment, the dummy region DMR of the first substrate 100 includes a plurality of pixel regions PX. The pixel regions PX of the dummy region DMR are dummy pixel regions.

[0031] The first substrate 100 includes a plurality of photoelectric conversion regions PD. The photoelectric conversion regions PD are disposed between the front and rear surfaces of the first substrate 100. The photoelectric conversion regions PD are provided within the pixel regions PX of the first substrate 100, respectively.

[0032] The photoelectric conversion region PD contains impurities of a second conductivity type. The second conductivity type is different from the first conductivity type. For example, the photoelectric conversion region PD contains phosphorus, arsenic, bismuth, or antimony as the second conductivity type impurity. The photoelectric conversion region PD is adjacent to the back surface of the first substrate 100.

[0033] The first substrate 100 includes a plurality of floating diffusion regions FD. The floating diffusion regions FD are provided in the pixel regions PX of the first substrate 100. The floating diffusion regions FD include impurities of a second conductive type. The floating diffusion regions FD are adjacent to a front surface of the first substrate 100.

[0034] The sensor chip 10 includes a pixel separating pattern 110. The pixel separating pattern 110 is provided in the first substrate 100. The pixel separating pattern 110 extends in a third direction D3 and penetrates the first substrate 100. The third direction D3 intersects with the first direction D1 and the second direction D2. For example, the third direction D3 is a vertical direction perpendicular to the first direction D1 and the second direction D2. The pixel separating pattern 110 defines a pixel region PX. The pixel separating pattern 110 has, for example, a grid shape.

[0035] The pixel separating pattern 110 includes a separating conductive layer 111 and a separating insulating layer 112. The separating conductive layer 111 penetrates the first substrate 100. The separating insulating layer 112 is interposed between the separating conductive layer 111 and the first substrate 100. The separating conductive layer 111 includes a conductive material. The separating insulating layer 112 includes an insulating material.

[0036] The sensor chip 10 includes an isolation pattern 120. The isolation pattern 120 is provided in a first substrate 100. The isolation pattern 120 is disposed adjacent to a front surface of the first substrate 100. The isolation pattern 120 defines active areas of the first substrate 100. The isolation pattern 120 includes an insulating material.

[0037] The sensor chip 10 includes a first wiring insulating film 130 covering the front surface of the first substrate 100. The first wiring insulating film 130 covers the active region of the first substrate 100. The first wiring insulating film 130 includes an insulating material. In one embodiment, the first wiring insulating film 130 is a multi-insulating film including multiple insulating films.

[0038] The sensor chip 10 includes a transmission gate TG and a gate insulating film GI. The transmission gate TG is provided between a first substrate 100 and a first wiring insulating film 130. The transmission gate TG includes a conductive material.

[0039] A gate insulating film GI is provided between the transmission gate electrode TG and the first substrate 100. The gate insulating film GI includes an insulating material.

[0040] First contacts CT1 and first conductive lines CL1 are provided in the first wiring insulating film 130. At least some of the first contacts CT1 are connected to the floating diffusion region FD. At least some of the first conductive lines CL1 are connected to the first contacts CT1. The first contacts CT1 and the first conductive lines CL1 include a conductive material.

[0041] The sensor chip 10 includes a fixed charge film 140 covering the rear surface of the first substrate 100. The fixed charge film 140 is, for example, a metal oxide film containing a less than stoichiometric amount of oxygen or a metal fluoride film containing a less than stoichiometric amount of fluorine. The fixed charge film 140 has negative fixed charges and generates hole accumulation. The fixed charge film 140 can effectively reduce dark current and white spots of the first substrate 100. In one embodiment, the fixed charge film 140 includes a plurality of different films.

[0042] The sensor chip 10 includes an anti-reflective coating 150 on the fixed charge film 140. The anti-reflective coating 150 includes, for example, aluminum oxide. In one embodiment, the anti-reflective coating 150 includes a plurality of different films.

[0043] The sensor chip 10 includes a fence pattern 160 on the anti-reflection film 150. The fence pattern 160 is disposed on the pixel array region APS of the first substrate 100. The fence pattern 160 separates color filters CF, which will be described later, from each other. For example, the fence pattern 160 has a grid shape. The fence pattern 160 includes a conductive material. For example, the fence pattern 160 includes tungsten.

[0044] The sensor chip 10 includes a light-shielding film 170 on the anti-reflection film 150. The light-shielding film 170 is disposed on the dummy region DMR, the optical black region OBR, and the pad region PDR of the first substrate 100. The light-shielding film 170 includes a conductive material. The light-shielding film 170 includes the same material as the fence pattern 160. For example, the light-shielding film 170 includes tungsten.

[0045] In one embodiment, the sensor chip 10 includes a protective film covering the fence pattern 160 and the light-shielding film 170. The protective film includes an insulating material.

[0046] The sensor chip 10 includes a connection contact 180. The connection contact 180 is disposed on an optical black region OBR of the first substrate 100. The connection contact 180 penetrates the fixed charge layer 140 and the anti-reflection layer 150 and is connected to the pixel separating pattern 110. The connection contact 180 includes a first contact pattern 181 connected to the pixel separating pattern 110 and a second contact pattern 182 on the first contact pattern 181.

[0047] The first contact pattern 181 is connected to the light blocking film 170 without a boundary. The first contact pattern 181 and the light blocking film 170 form an integral structure. The first contact pattern 181 includes the same material as the light blocking film 170. The second contact pattern 182 includes a different material from the first contact pattern 181. As an example, the second contact pattern 182 includes aluminum.

[0048] The sensor chip 10 includes a first connecting structure 190. The first connecting structure 190 is disposed on the optical black region OBR of the first substrate 100. The first connecting structure 190 penetrates the fixed charge film 140, the anti-reflection film 150, the first substrate 100, and the first wiring insulating film 130 to be connected to the circuit chip 20 described below. The first connecting structure 190 is connected to at least one of the first conductive lines CL1 in the first wiring insulating film 130.

[0049] The first connecting structure 190 includes a first conductive pattern 191 connected to the circuit chip 20, a first insulating pattern 192 on the first conductive pattern 191, and a first capping pattern 193 on the first insulating pattern 192. The first conductive pattern 191 is connected to the light-shielding film 170 without a boundary. The first conductive pattern 191 and the light-shielding film 170 form an integral structure. The first conductive pattern 191 includes the same material as the light-shielding film 170.

[0050] The first insulating pattern 192 includes an insulating material, and the first capping pattern 193 includes an insulating material.

[0051] The sensor chip 10 includes a conductive pad 210. The conductive pad 210 is disposed on the pad region PDR of the first substrate 100. The conductive pad 210 is connected to the first substrate 100 through the fixed charge layer 140 and the anti-reflection layer 150.

[0052] The conductive pad 210 includes a first pad pattern 211 on the first substrate 100 and a second pad pattern 212 on the first pad pattern 211. The first pad pattern 211 is connected to the light-shielding film 170 without a boundary. The first pad pattern 211 and the light-shielding film 170 form an integral structure. The first pad pattern 211 includes the same material as the light-shielding film 170.

[0053] The second pad pattern 212 includes a different material than the first pad pattern 211. As an example, the second pad pattern 212 includes aluminum.

[0054] The sensor chip 10 includes a second connecting structure 220. The second connecting structure 220 is disposed on the pad region PDR of the first substrate 100. The second connecting structure 220 penetrates the fixed charge layer 140, the anti-reflection layer 150, the first substrate 100, and the first wiring insulating layer 130 to be connected to the circuit chip 20 described below. The second connecting structure 220 is connected to at least one of the first conductive lines CL1 in the first wiring insulating layer 130.

[0055] The second connecting structure 220 includes a second conductive pattern 221 connected to the circuit chip 20, a second insulating pattern 222 on the second conductive pattern 221, and a second capping pattern 223 on the second insulating pattern 222. The second conductive pattern 221 is connected to the light-shielding film 170 without a boundary. The second conductive pattern 221 and the light-shielding film 170 form an integral structure. The second conductive pattern 221 includes the same material as the light-shielding film 170.

[0056] The second insulating pattern 222 includes an insulating material. The second capping pattern 223 includes an insulating material.

[0057] The sensor chip 10 includes color filters CF. The color filters CF are disposed on the pixel array region APS and the dummy region DMR of the first substrate 100. The color filters CF are disposed on the pixel regions PX, respectively. The color filters CF are provided at positions corresponding to the photoelectric conversion regions PD, respectively. Each of the color filters CF is one of a red filter, a blue filter, and a green filter. The color filters CF form a color filter array. For example, the color filters CF are two-dimensionally arranged in a Bayer pattern manner.

[0058] A fence pattern 160 is provided between the color filters CF disposed on the pixel array region APS. The color filters CF disposed on the dummy region DMR are provided on a light blocking film 170. In one embodiment, the color filters CF disposed on the dummy region DMR are dummy color filters.

[0059] The sensor chip 10 includes a black bulk filtering film FI. The black bulk filtering film FI is disposed on the optical black area OBR of the first substrate 100. The black bulk filtering film FI is disposed on the light blocking film 170. The black bulk filtering film FI blocks light of a different wavelength from that of the color filter CF.

[0060] The sensor chip 10 includes a lens film 230. The lens film 230 is disposed on the pixel array region APS, the dummy region DMR, the optical black region OBR, and the pad region PDR of the first substrate 100. The lens film 230 is disposed on the color filter CF and the black bulk filtering film FI. The lens film 230 is transparent. The lens film 230 transmits light. The lens film 230 includes an organic material. For example, the lens film 230 includes a photoresist material or a thermosetting resin.

[0061] The lens film 230 includes a base portion 231 on the color filter CF and the black bulk filtering film FI. The lens film 230 includes a microlens 232, a dummy lens 233, and a blocking bar 234 on the base portion 231. The microlenses 232, the dummy lenses 233, and the blocking bar 234 are disposed at the same level. The microlenses 232, the dummy lenses 233, and the blocking bar 234 are parts protruding from the base portion 231 in the third direction D3. The microlenses 232, the dummy lenses 233, and the blocking bar 234 are connected to the base portion 231 without a boundary. The microlenses 232, the dummy lenses 233, the blocking bar 234, and the base portion 231 form an integral structure. The microlenses 232 are disposed on the pixel array region APS and the dummy region DMR of the first substrate 100. The dummy lenses 233 and the blocking bars 234 are disposed on the optical black area OBR of the first substrate 100 .

[0062] The microlenses 232 are disposed on the pixel regions PX, respectively. The microlenses 232 are provided at positions corresponding to the photoelectric conversion regions PD, respectively. The microlenses 232 disposed on the dummy regions DMR are dummy microlenses.

[0063] The blocking bar 234 includes two portions extending in a first direction D1 and two portions extending in a second direction D2. The blocking bar 234 surrounds the microlens 232. The microlens 232 is disposed between the two portions of the blocking bar 234 extending in the first direction D1. The microlens 232 is disposed between the two portions of the blocking bar 234 extending in the second direction D2. The blocking bar 234 surrounds at least some of the dummy lenses 233. In the plan view shown in FIG. 3A, the blocking bar 234 has a ring shape.

[0064] The length of the blocking bar 234 is greater than the lengths of the microlenses 232 and the dummy lenses 233. As an example, the length in the first direction D1 of the portion of the blocking bar 234 extending in the first direction D1 is greater than the length in the first direction D1 of the microlenses 232 and the length in the first direction D1 of the dummy lenses 233. The length of the blocking bar 234 is greater than the length of the pixel array region APS of the first substrate 100.

[0065] The top surface 232t of the microlens 232, the top surface 233t of the dummy lens 233, and the top surface 234t of the blocking bar 234 are curved. The radius of curvature of the top surface 232t of the microlens 232, the radius of curvature of the top surface 233t of the dummy lens 233, and the radius of curvature of the top surface 234t of the blocking bar 234 are the same. For example, in the cross-sectional view shown in Figures 3C and 3D, the radius of curvature of the top surface 232t of the microlens 232, the radius of curvature of the top surface 233t of the dummy lens 233, and the radius of curvature of the top surface 234t of the blocking bar 234 are the same. In other embodiments, the radius of curvature of the top surface 232t of the microlens 232, the radius of curvature of the top surface 233t of the dummy lens 233, and the radius of curvature of the top surface 234t of the blocking bar 234 are different from each other.

[0066] The maximum width of the microlenses 232, the maximum width of the dummy lenses 233, and the maximum width of the blocking bars 234 are the same. As an example, the maximum width W1 of the microlenses 232 in the first direction D1, the maximum width W2 of the dummy lenses 233 in the first direction D1, and the maximum width W3 of the blocking bars 234 in the first direction D1 are the same. In another embodiment, the maximum width of the microlenses 232, the maximum width of the dummy lenses 233, and the maximum width of the blocking bars 234 are different from each other.

[0067] The level of the top of the microlenses 232, the level of the top of the dummy lenses 233, and the level of the top of the blocking bars 234 are the same. In other embodiments, the level of the top of the microlenses 232, the level of the top of the dummy lenses 233, and the level of the top of the blocking bars 234 are different from each other.

[0068] The sensor chip 10 includes a coating film 240 on the lens film 230. The coating film 240 is transparent. The coating film 240 conformally covers the upper surface of the lens film 230.

[0069] The coating film 240 includes a first portion on the microlenses 232, a second portion on the dummy lenses 233, and a third portion on the blocking bars 234. The top surface of the first portion, the top surface of the second portion, and the top surface of the third portion of the coating film 240 are curved.

[0070] A recess RS is defined through the coating film 240 and the lens film 230. The recess RS exposes the conductive pad 210.

[0071] The image sensor includes a circuit chip 20. The circuit chip 20 includes a second substrate 300. The second substrate 300 is a semiconductor substrate. In one embodiment, the second substrate 300 is a SOI substrate.

[0072] The circuit chip 20 includes a second wiring insulating layer 310 on the second substrate 300. The second wiring insulating layer 310 covers the active region of the second substrate 300. The second wiring insulating layer 310 includes an insulating material. In one embodiment, the second wiring insulating layer 310 is a multi-insulating layer including multiple insulating layers.

[0073] The circuit chip 20 includes an integrated circuit 320 between a second substrate 300 and a second wiring insulating film 310. The integrated circuit 320 includes at least one of a logic circuit and a memory circuit.

[0074] The circuit chip 20 includes second contacts CT2 and second conductive lines CL2 in the second wiring insulating film 310. At least some of the second contacts CT2 are coupled to the integrated circuit 320. At least some of the second conductive lines CL2 are coupled to the second contacts CT2. At least one of the second conductive lines CL2 is coupled to the first connecting structure 190. At least one of the second conductive lines CL2 is coupled to the second connecting structure 220. The second contacts CT2 and the second conductive lines CL2 include a conductive material.

[0075] 3A and 3B, the dummy lens 233 includes a first dummy lens DL1, a second dummy lens DL2, a third dummy lens DL3, and a fourth dummy lens DL4. The blocking bar 234 includes a first blocking bar BB1, a second blocking bar BB2, and a third blocking bar BB3.

[0076] Unlike what is shown, the number of blocking bars 234 is not limited to three. In other embodiments, the number of blocking bars 234 may be two or less, or may be four or more.

[0077] The first blocking bar BB1 surrounds the first dummy lens DL1 and the microlens 232. The second blocking bar BB2 surrounds the first blocking bar BB1, the second dummy lens DL2, the first dummy lens DL1, and the microlens 232. The third blocking bar BB3 surrounds the second blocking bar BB2, the third dummy lens DL3, the first blocking bar BB1, the second dummy lens DL2, the first dummy lens DL1, and the microlens 232.

[0078] The distance between the first dummy lens DL1 and the microlens 232 is smaller than the distance between the first blocking bar BB1 and the microlens 232. The second dummy lens DL2 is disposed between the first blocking bar BB1 and the second blocking bar BB2. The third dummy lens DL3 is disposed between the second blocking bar BB2 and the third blocking bar BB3. The distance between the fourth dummy lens DL4 and the microlens 232 is larger than the distance between the third blocking bar BB3 and the microlens 232. The first to third blocking bars (BB1, BB2, BB3) are disposed between the first dummy lens DL1 and the fourth dummy lens DL4.

[0079] According to an embodiment, a method for manufacturing an image sensor package including an image sensor includes applying an adhesive material on a pad region PDR of a first substrate 100 of the image sensor and forming a dam structure on the adhesive material, for example, the adhesive material includes an epoxy.

[0080] By providing a blocking bar 234 on the optical black area OBR, the adhesive material applied on the pad area PDR is prevented from penetrating into the pixel array area APS, thereby preventing a decrease in the sensitivity of the image sensor.

[0081] In the image sensor according to one embodiment, compressive stress is generated in the blocking bar 234, and the compressive stress of the blocking bar 234 can prevent a crack in the coating film 240 that occurs on the optical black area OBR from propagating to the pixel array area APS.

[0082] 4A is a plan view of a second example of an image sensor according to an embodiment, and FIG 4B is a cross-sectional view taken along line DD' of FIG 4A.

[0083] 4A and 4B, the image sensor includes a sensor chip 10a and a circuit chip 20a. The sensor chip 10a includes a lens film 230a.

[0084] The lens film 230a includes a base portion 231a. The lens film 230a includes a first dummy lens DL1a, a second dummy lens DL2a, a first blocking bar BB1a, a second blocking bar BB2a, and a third blocking bar BB3a on the base portion 231a.

[0085] The first dummy lens DL1a is surrounded by the first to third blocking bars (BB1a, BB2a, BB3a). The second dummy lens DL2a is disposed closer to the pad region PDR than the third blocking bar BB3a. No dummy lens is disposed between the first blocking bar BB1a and the second blocking bar BB2a. No dummy lens is disposed between the second blocking bar BB2a and the third blocking bar BB3a.

[0086] The base portion 231a includes a first flat top surface FS1a between the first blocking bar BB1a and the second blocking bar BB2a, and a second flat top surface FS2a between the second blocking bar BB2a and the third blocking bar BB3a.

[0087] The first flat top surface FS1a connects the first blocking bar BB1a and the second blocking bar BB2a. The first flat top surface FS1a is flat. The first flat top surface FS1a includes two portions extending in the first direction D1 and two portions extending in the second direction D2. In a plan view, the first flat top surface FS1a has a ring shape. The width of the first flat top surface FS1a is greater than the width of the first blocking bar BB1a and the width of the second blocking bar BB2a. As an example, the width in the first direction D1 of the portion of the first flat top surface FS1a extending in the second direction D2 is greater than the width in the first direction D1 of the portion of the first blocking bar BB1a extending in the second direction D2 and the width in the first direction D1 of the portion of the second blocking bar BB2a extending in the second direction D2.

[0088] The second flat top surface FS2a connects the second blocking bar BB2a and the third blocking bar BB3a. The second flat top surface FS2a is flat. The second flat top surface FS2a includes two portions extending in the first direction D1 and two portions extending in the second direction D2. In a plan view, the second flat top surface FS2a has a ring shape. The width of the second flat top surface FS2a is greater than the width of the second blocking bar BB2a and the width of the third blocking bar BB3a. As an example, the width in the first direction D1 of the portion of the second flat top surface FS2a extending in the second direction D2 is greater than the width in the first direction D1 of the portion of the second blocking bar BB2a extending in the second direction D2 and the width in the first direction D1 of the portion of the third blocking bar BB3a extending in the second direction D2.

[0089] FIG. 5 is a plan view of a third example of an image sensor according to an embodiment.

[0090] Referring to FIG. 5, the image sensor includes a first dummy lens DL1b, a second dummy lens DL2b, a third dummy lens DL3b, a fourth dummy lens DL4b, a first blocking bar BB1b, a second blocking bar BB2b, and a third blocking bar BB3b.

[0091] The first blocking bars BB1b are spaced apart from each other. The first blocking bars BB1b include a first blocking bar BB1b extending in a first direction D1 and a first blocking bar BB1b extending in a second direction D2. The first blocking bars BB1b extending in the first direction D1 are arranged in the first direction D1. The first blocking bars BB1b extending in the second direction D2 are arranged in the second direction D2.

[0092] The second blocking bars BB2b are spaced apart from each other. The second blocking bars BB2b include a second blocking bar BB2b extending in a first direction D1 and a second blocking bar BB2b extending in a second direction D2. The second blocking bars BB2b extending in the first direction D1 are arranged in the first direction D1. The second blocking bars BB2b extending in the second direction D2 are arranged in the second direction D2.

[0093] The third blocking bars BB3b are spaced apart from each other. The third blocking bars BB3b include a third blocking bar BB3b extending in a first direction D1 and a third blocking bar BB3b extending in a second direction D2. The third blocking bars BB3b extending in the first direction D1 are arranged in the first direction D1. The third blocking bars BB3b extending in the second direction D2 are arranged in the second direction D2.

[0094] A first gap GA1b is defined between adjacent first blocking bars BB1b. A second gap GA2b is defined between adjacent second blocking bars BB2b. A third gap GA3b is defined between adjacent third blocking bars BB3b. A portion of the upper surface of the base portion 231b is exposed through the first to third gaps (GA1b, GA2b, GA3b).

[0095] The width of the gaps (GA1b, GA2b, GA3b) is the same as the width of the blocking bars (BB1b, BB2b, BB3b). For example, the width in the first direction D1 of the first gap GA1b provided between the first blocking bars BB1b extending in the second direction D2 is the same as the width in the first direction D1 of the first blocking bars BB1b extending in the second direction D2.

[0096] The length of the blocking bars (BB1b, BB2b, BB3b) is greater than the length of the gaps (GA1b, GA2b, GA3b). For example, the length of the first gaps GA1b provided between the first blocking bars BB1b extending in the second direction D2 is greater than the length of the first blocking bars BB1b extending in the second direction D2 in the second direction D2.

[0097] FIG. 6 is a plan view of a fourth example of an image sensor according to an embodiment.

[0098] Referring to FIG. 6, the image sensor includes a first blocking bar BB1c, a second blocking bar BB2c, a third blocking bar BB3c, a first dummy lens DL1c surrounded by the first blocking bar BB1c, and a second dummy lens DL2c surrounding the third blocking bar BB3c.

[0099] A first gap GA1c is defined between the first blocking bars BB1c, a second gap GA2c is defined between the second blocking bars BB2c, and a third gap GA3c is defined between the third blocking bars BB3c.

[0100] The base portion 231c includes a first flat top surface FS1c between the first blocking bar BB1c and the second blocking bar BB2c and a second flat top surface FS2c between the second blocking bar BB2c and the third blocking bar BB3c. The first flat top surface FS1c is connected to the first and second gaps (GA1c, GA2c). The second flat top surface FS2c is connected to the second and third gaps (GA2c, GA3c).

[0101] FIG. 7 is a cross-sectional view of an image sensor package according to an embodiment.

[0102] 7, the image sensor package includes a package substrate 410. The package substrate 410 is, for example, a Printed Circuit Board (PCB).

[0103] The package substrate 410 includes an upper pad 430. The upper pad 430 includes a conductive material. An external connection terminal 420 is provided under the package substrate 410. The image sensor package is electrically connected to an external device through the external connection terminal 420. The external connection terminal 420 includes a conductive material.

[0104] An adhesive film 440 is provided on the package substrate 410. The adhesive film 440 includes, for example, a polymeric material.

[0105] An image sensor 450 is provided on the adhesive film 440. The image sensor 450 includes a pixel array area (APS) 451, an optical black area (OBR) 452, and a pad area (PDR) 453. The image sensor 450 includes a conductive pad 454 in the pad area 453. The conductive pad 454 is electrically connected to the upper pad 430, for example, via a wire.

[0106] In one embodiment, the image sensor 450 includes a sensor chip and a circuit chip, and the conductive pads 454 are provided between the sensor chip and the circuit chip of the image sensor 450 and are directly coupled to the circuit chip.

[0107] Microlenses are provided in a pixel array region 451 of the image sensor 450. Dummy lenses and blocking bars are provided in an optical black region 452 of the image sensor 450.

[0108] A dam structure 480 is provided on the pad area 453 and a portion of the optical black area 452 of the image sensor 450. In one embodiment, the image sensor 450 is provided only on the pad area 453. The dam structure 480 is attached to the image sensor 450 using an adhesive material. The pixel array area 451 of the image sensor 450 is exposed through the dam structure 480. The dam structure 480 includes at least one of a polymer material or a metal, for example. In a plan view, the dam structure 480 has a shape of a ring.

[0109] A transparent substrate 490 is provided on the dam structure 480. The transparent substrate 490 includes a material having high light transmittance. For example, the transparent substrate 490 includes glass.

[0110] A molding film 470 is provided that surrounds the transparent substrate 490, the dam structure 480, and the image sensor 450. The molding film 470 includes, for example, a polymer material.

[0111] In an image sensor package according to an embodiment, the image sensor 450 includes a blocking bar, which prevents an adhesive material for attaching the dam structure 480 to the image sensor 450 from penetrating into the pixel array region 451, thereby preventing a decrease in the sensitivity of the image sensor 450.

[0112] 8A and 8B are cross-sectional views of another example of an image sensor according to an embodiment.

[0113] 8A and 8B, the image sensor includes a sub-chip 20d, a circuit chip 30d, and a sensor chip 10d. The sub-chip 20d is provided on the circuit chip 30d, and the sensor chip 10d is provided on the sub-chip 20d. The sensor chip 10d includes a microlens 231d, a dummy lens 232d, and a blocking bar 233d.

[0114] The sensor chip 10d includes a first substrate 100d and a first wiring insulating film 130d. The sub-chip 20d includes a second substrate 300d and a second wiring insulating film 310d. The circuit chip 30d includes a third substrate 500d and a third wiring insulating film 510d. The first wiring insulating film 130d and the second wiring insulating film 310d are in contact with each other. The second substrate 300d and the third wiring insulating film 510d are in contact with each other.

[0115] The sensor chip 10d includes a first bonding pad BP1 in contact with the sub chip 20d. The sub chip 20d includes a second bonding pad BP2 in contact with the first bonding pad BP1. The sensor chip 10d and the sub chip 20d are electrically connected through the first and second bonding pads BP1 and BP2. The first and second bonding pads BP1 and BP2 include, for example, copper.

[0116] The sub-chip 20d includes an electronic element 320d, a first contact 330d connected to the electronic element 320d, and a first conductive line 340d. The first contact 330d is connected to the first conductive line 340d or a second bonding pad BP2. The electronic element 320d includes at least one of a selection transistor, a reset gate, or a source follower gate. The first contact 330d and the first conductive line 340d are provided in a second wiring insulating film 310d.

[0117] The circuit chip 30d includes an integrated circuit 520d, a second contact 530d connected to the integrated circuit 520d, and a second conductive line 540d connected to the second contact 530d. The second contact 530d and the second conductive line 540d are provided in a third wiring insulating film 510d.

[0118] A through via TV is provided. The through via TV penetrates the second substrate 300d of the sub-chip 20d. The through via TV is connected to the first conductive line 340d and the second conductive line 540d. The sub-chip 20d and the circuit chip 30d are electrically connected by the through via TV. The through via TV includes a conductive material.

[0119] FIG. 9 is a cross-sectional view of yet another example of an image sensor according to an embodiment.

[0120] 9, the image sensor includes a sensor chip 10e and a circuit chip 20e. The sensor chip 10e includes a base portion 231e, a dummy lens 232e, and a blocking bar 233e.

[0121] The image sensor includes a conductive pad 210e directly connected to the circuit chip 20e. The conductive pad 210e is provided in a recess RSe. The recess RSe penetrates the lens film 230e, the anti-reflection film 150e, the fixed charge film 140e, the first substrate 100e, and the first wiring insulating film 130e of the sensor chip 10e to expose the conductive structure CSe in the second wiring insulating film 310e of the circuit chip 20e. The conductive pad 210e is directly connected to the conductive structure CSe in the second wiring insulating film 310e of the circuit chip 20e. The conductive pad 210e includes a conductive material.

[0122] The conductive structure CSe includes a conductive material and is a conductive line, a conductive contact, or a conductive pad.

[0123] Although the embodiments of the present invention have been described in detail above with reference to the drawings, the present invention is not limited to the above-described embodiments and can be modified in various ways without departing from the technical spirit of the present invention. [Explanation of symbols]

[0124] 10, 10a, 10d, 10e Sensor chip 20, 20a, 20e, 30d Circuit chip 20d Sub chip 100, 100d, 100e First board 110 pixel separation pattern 111 Separation Conductive Membrane 112 Isolation insulating film 120 Element isolation pattern 130, 130d, 130e, 310 First wiring insulating film 140, 140e fixed charge membrane 150, 150e Anti-reflective coating 160 fence pattern 170 Light-shielding film 180 connected contacts 181, 182 1st and 2nd contact patterns 190, 220 1st and 2nd connected structure 191, 221 First and second conductive patterns 192, 222 1st and 2nd insulation patterns 193, 223 1st and 2nd capping patterns 210, 210e Conductive pad 211, 212 1st and 2nd pad patterns 230, 230a, 230e Lens membrane 231, 231a, 231b, 231c, 231d, 231e Base 232 Microlens 232d, 232e dummy lens 233d, 233e, 234 Blocking Bar 232t Microlens top surface 233 Dummy Lens 233t Top of the dummy lens 234 Blocking Bar 234t Top of blocking bar 240 Coating Film 300, 300d, 320d Second board 310, 310d, 310e Second wiring insulating film 320, 520d Integrated Circuits 320d Electronics 330d, 530d 1st and 2nd contacts 340d, 540d 1st and 2nd conductive lines 410 Package Substrate 420 External connection terminal 430 Upper Pad 440 Adhesive film 450 Image Sensor 451 Pixel Array Area (APS) 452 Optical Black Area (OBR) 453 Pad Area (PDR) 454 Conductive Pad 470 Molding Film 480 Dam Structure 490 Transparent Substrate 500d 3rd board 510d Third wiring insulating film 1001 Active Pixel Sensor Array 1002 Line Decoder 1003 Line Driver 1004 Column Decoder 1005 Timing Generator 1006 Correlated Double Sampler (CDS) 1007 Analog-to-Digital Converter (ADC) 1008 Input / Output Buffer APS Pixel Array Area BB1, BB1a, BB1b, BB1c First blocking bar BB2, BB2a, BB2b, BB2c Second Blocking Bar BB3, BB3a, BB3b, BB3c 3rd Blocking Bar BP1, BP2 1st and 2nd bonding pads CF Color Filter CSe conductive structure CL1, CL2 First and second conductive lines CT1, CT2 1st and 2nd contacts DL1, DL1a, DL1b, DL1c First dummy lens DL2, DL2a, DL2b, DL2c Second dummy lens DL3, DL3b 3rd dummy lens DL4, DL4b 4th dummy lens DMR Dummy area DX Source Follower Transistor FD Floating diffusion region FI Black Bulk Filtering Film FS1a, FS1c First flat top surface FS2a, FS2c Second flat top surface GA1b, GA1c First gap GA2b, GA2c Second gap GA3b, GA3c Third gap GI Gate Insulator OBR Optical Black Area PD Photoelectric conversion area PDR Pad Area PX Pixel Area RS, RSe recess RX Reset Transistor SEL Select gate electrode SF Source follower gate electrode SX selection transistor TG Transmission Gate TV Through Via TX Transistor UP unit pixel

Claims

1. A substrate including a pixel array region and an optical black region surrounding the pixel array region, A microlens provided on the aforementioned pixel array region, A dummy lens provided on the optical black area, The system comprises a blocking bar provided on the optical black region, The blocking bar extends around the microlens in a plan view, The length of the blocking bar is longer than the length of the microlens and the length of the dummy lens. The upper surface of the blocking bar, the upper surface of the dummy lens, and the upper surface of the blocking bar are curved. An image sensor characterized in that the microlenses, the dummy lens, and the blocking bar are arranged on the same plane.

2. The image sensor according to claim 1, characterized in that the blocking bar has a ring shape in a plan view and surrounds the microlens.

3. The image sensor according to claim 2, characterized in that the blocking bar includes a first blocking bar surrounding the microlens and a second blocking bar surrounding the first blocking bar.

4. The image sensor according to claim 3, characterized in that the dummy lens includes a first dummy lens surrounded by the first blocking bar and a second dummy lens positioned between the first blocking bar and the second blocking bar.

5. The image sensor according to claim 1, characterized in that the radius of curvature of the upper surface of the blocking bar is the same as the radius of curvature of the upper surface of the microlens.

6. The image sensor according to claim 1, characterized in that the width of the blocking bar is the same as the width of the microlens.

7. The blocking bar includes a plurality of blocking bars extending in a first direction, The image sensor according to claim 1, characterized in that the blocking bars are arranged in the first direction.

8. The blocking bar includes a first blocking bar and a second blocking bar positioned further away from the microlens than the first blocking bar. The first blocking bar is arranged in a first direction, The image sensor according to claim 1, characterized in that the second blocking bar is arranged in the first direction.

9. A gap is defined between the first blocking bars. The image sensor according to claim 8, characterized in that the length of each of the first blocking bars is greater than the length of each of the gaps.

10. The image sensor according to claim 1, characterized in that the level of the uppermost part of the blocking bar is the same as the level of the uppermost part of the microlens.

11. A substrate including a pixel array region and an optical black region surrounding the pixel array region, A microlens on the aforementioned pixel array region, The dummy lens on the optical black region, The optical black region comprises a blocking bar, The length of the blocking bar is longer than the length of the microlens and the length of the dummy lens. The blocking bar extends around the microlens in a plan view, surrounding the microlens. The upper surface of the microlens, the upper surface of the dummy lens, and the upper surface of the blocking bar are curved. An image sensor characterized in that the microlenses, the dummy lens, and the blocking bar are arranged on the same plane.

12. The image sensor according to claim 11, further comprising the microlens, the dummy lens, and a base portion connected to the blocking bar.

13. The blocking bar includes a first blocking bar and a second blocking bar surrounding the first blocking bar. The image sensor according to claim 12, characterized in that the base portion includes a flat upper surface connecting the first blocking bar and the second blocking bar.

14. The blocking bar includes a plurality of blocking bars extending in a first direction, The plurality of blocking bars are arranged in the first direction, The image sensor according to claim 11, characterized in that gaps are provided between the plurality of blocking bars.

15. The image sensor according to claim 11, further comprising a coating film covering the microlens, the dummy lens, and the blocking bar.

16. The image sensor according to claim 11, characterized in that the width of the blocking bar is the same as the width of the microlens.

17. The image sensor according to claim 11, characterized in that the width of the blocking bar is different from the width of the microlens.

18. A substrate including a pixel array region and an optical black region surrounding the pixel array region, A color filter on the aforementioned pixel array region, The black bulk filtering film on the optical black region, The aforementioned color filter and the lens film on the black bulk filtering film, The lens film comprises a coating film on the aforementioned lens film, The aforementioned lens film is The base part, The microlens on the base portion, The dummy lens on the base portion, The base portion includes a blocking bar, The length of the blocking bar is longer than the length of the microlens and the length of the dummy lens. The blocking bar extends around the microlens in a plan view, surrounding the microlens. The upper surface of the blocking bar, the upper surface of the dummy lens, and the upper surface of the blocking bar are curved. An image sensor characterized in that the microlenses, the dummy lens, and the blocking bar are arranged on the same plane.

19. The coating film includes a first portion on the microlens, a second portion on the dummy lens, and a third portion on the blocking bar. The image sensor according to claim 18, characterized in that the upper surface of the third portion of the coating film is curved.

Images