Electro-optic device and electronic appliance

Abstract

To provide an electro-optic device and an electronic appliance, in which light extraction efficiency can be improved.SOLUTION: An electro-optic device includes: a first light-emitting element including a counter electrode, a first pixel electrode, and a first light-emitting layer and emitting light in a first wavelength range; a second light-emitting element including the counter electrode, a second pixel electrode, and a second light-emitting layer and emitting light in a second wavelength range that is different from the first wavelength range; a first reflection layer; a first optical adjustment layer adjusting a first optical distance between the first reflection layer and the counter electrode; a second reflection layer; and a second optical adjustment layer adjusting a second optical distance between the second reflection layer and the counter electrode. The light in the first wavelength range emitted from the first light-emitting element resonates between the first reflection layer and the counter electrode and is output from the counter electrode. The light in the second wavelength range emitted from the second light-emitting element resonates between the second reflection layer and the counter electrode and is output from the counter electrode. A material of the first light-emitting layer and a material of the second light-emitting layer are different from each other.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to an electro-optical device and an electronic device. [Background technology]

[0002] Electro-optical devices such as liquid crystal display devices and organic electroluminescence display devices are known. One example of such a device is the electro-optical device described in Patent Document 1.

[0003] The electro-optical device of this document includes a light-emitting element and a reflective layer. The light-emitting element and the reflective layer are provided for each sub-pixel. The light-emitting element includes a pixel electrode, a light-emitting functional layer, and a counter electrode. A distance adjustment layer for adjusting the optical distance is provided between the reflective layer and the counter electrode. In this electro-optical device, the light-emitting functional layer is common to the multiple sub-pixels and emits white light.

[0004] In addition, in the electro-optical device, the reflective layer and the counter electrode form an optical resonance structure, so that the light emitted from the light-emitting functional layer is repeatedly reflected between the reflective layer and the counter electrode, and the intensity of the light having a wavelength corresponding to the optical distance for each sub-pixel is increased. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2019-029188 A Summary of the Invention [Problem to be solved by the invention]

[0006] By providing an optical resonant structure, it is possible to improve the efficiency of light and the color purity. However, in the electro-optical device of the document, since the light-emitting functional layer is common to a plurality of sub-pixels, a part of the white light emitted by the light-emitting functional layer is discarded as unused light. For example, in a sub-pixel that emits light in the red wavelength region, light in the green wavelength region and light in the blue wavelength region are not used. Therefore, it is desired to improve the light extraction efficiency in an electro-optical device having an optical resonant structure. [Means for solving the problem]

[0007] In order to achieve the above object, an electro-optical device according to a preferred embodiment of the present invention provides a first light-emitting element having a semi-transparent counter electrode, a first pixel electrode having light transmissive properties, and a first light-emitting functional layer including a first light-emitting layer, disposed between the first pixel electrode and the counter electrode and in contact with the first pixel electrode and the counter electrode, the first light-emitting element emitting light in a first wavelength range, the counter electrode, a second pixel electrode having light transmissive properties, and a second light-emitting functional layer including a second light-emitting layer, disposed between the second pixel electrode and the counter electrode and in contact with the second pixel electrode and the counter electrode, the second light-emitting element emitting light in the second wavelength range different from the first wavelength range, a first reflective layer, and a first light-emitting layer and a first reflective layer and a first light-emitting functional layer. the first light-emitting element and a second light-emitting element; a first optical adjustment layer that adjusts a first optical distance between the first reflective layer and the opposing electrode; a second reflective layer; and a second optical adjustment layer that has a thickness different from the first optical adjustment layer, is disposed between the second reflective layer and the second light-emitting element and adjusts a second optical distance between the second reflective layer and the opposing electrode, wherein light in the first wavelength range emitted by the first light-emitting element resonates between the first reflective layer and the opposing electrode and is emitted from the opposing electrode, and light in the second wavelength range emitted by the second light-emitting element resonates between the second reflective layer and the opposing electrode and is emitted from the opposing electrode, and a material constituting the first light-emitting layer and a material constituting the second light-emitting layer are different from each other. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view illustrating an electro-optical device according to an embodiment. [Diagram 2] 2 is an equivalent circuit diagram of the sub-pixel in FIG. 1. [Diagram 3] 2 is a schematic plan view of one pixel of the electro-optical device of FIG. 1. [Figure 4] 2 is a cross-sectional view of the electro-optical device of FIG. 1. [Diagram 5] 5 is a schematic diagram of the electro-optical device shown in FIG. [Figure 6] FIG. 13 is a schematic diagram of an electro-optical device of a comparative example. [Figure 7] 1 is a plan view diagrammatically illustrating a portion of a virtual image electro-optical device, which is an example of an electronic device. [Figure 8] FIG. 1 is a perspective view showing a personal computer as an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Note that the dimensions and scale of each part in the drawings may differ from the actual ones, and some parts are shown diagrammatically to facilitate understanding. Furthermore, the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description to the effect that the present invention is limited thereto.

[0010] Furthermore, the "electrical connection" between element α and element β includes a configuration in which element α and element β are directly joined to each other to provide electrical continuity, as well as a configuration in which element α and element β are indirectly in electrical continuity via another conductor. Furthermore, "element β on element α" includes a configuration in which element α and element β are in direct contact with each other, as well as a configuration in which element α and element β are in indirect contact with each other via another element. Furthermore, "element α and element β are equal" means that element α and element β are substantially equal, and includes the range of manufacturing error.

[0011] 1. Embodiment 1A. Basic configuration of electro-optical device FIG. 1 is a plan view showing an electro-optical device 100 in an embodiment. For convenience of explanation, the following description will be made by appropriately using the X-axis, Y-axis, and Z-axis, which are mutually orthogonal. Moreover, one direction along the X-axis is called the X1 direction, and the opposite direction to the X1 direction is called the X2 direction. Similarly, one direction along the Y-axis is called the Y1 direction, and the opposite direction to the Y1 direction is called the Y2 direction. One direction along the Z-axis is called the Z1 direction, and the opposite direction to the Z1 direction is called the Z2 direction. Viewing from the Z1 direction or the Z2 direction is called "planar view." Moreover, optical transparency means transparency to visible light, and preferably means that the transmittance of visible light is 50% or more. Moreover, optical reflectivity means reflectivity to visible light, and preferably means that the reflectance of visible light is 50% or more.

[0012] In the following embodiments, the pixel electrode 23B corresponds to the "first pixel electrode". The pixel electrode 23G corresponds to the "second pixel electrode". The pixel electrode 23R corresponds to the "third pixel electrode". The light-emitting layer 244B corresponds to the "first light-emitting layer". The light-emitting layer 244G corresponds to the "second light-emitting layer". The light-emitting layer 244R corresponds to the "third light-emitting layer". The light-emitting functional layer 200B corresponds to the "first light-emitting functional layer". The light-emitting functional layer 200G corresponds to the "second light-emitting functional layer". The light-emitting functional layer 200R corresponds to the "third light-emitting functional layer". The light-emitting element 20B corresponds to the "first light-emitting element". The light-emitting element 20G corresponds to the "second light-emitting element". The light-emitting element 20R corresponds to the "third light-emitting element". The reflective layer 21B corresponds to the "first reflective layer". The reflective layer 21G corresponds to the "second reflective layer". The reflective layer 21R corresponds to the "third reflective layer". Optical distance LB corresponds to the "first optical distance." Optical distance LG corresponds to the "second optical distance." Optical distance LR corresponds to the "second optical distance." Optical adjustment layer 220B corresponds to the "first optical adjustment layer." Optical adjustment layer 220G corresponds to the "second optical adjustment layer." Optical adjustment layer 220R corresponds to the "third optical adjustment layer." Light-emitting area AB corresponds to the "first light-emitting area." Light-emitting area AG corresponds to the "second light-emitting area." Light-emitting area AR corresponds to the "third light-emitting area."

[0013] 1 is, for example, an organic EL (electroluminescence) device that displays a full-color image. The image includes an image that displays only text information. The electro-optical device 100 is preferably used, for example, as a microdisplay that displays an image in a head-mounted display.

[0014] The electro-optical device 100 has a display area A10 and a peripheral area A20. The display area A10 is an area for displaying an image. The shape of the display area A10 in a plan view is substantially rectangular, but may be other shapes. The peripheral area A20 is a frame-shaped area provided outside the display area A10 and surrounding the display area A10 in a plan view.

[0015] The display area A10 includes a plurality of pixels P0. Each pixel P0 is the smallest unit for displaying an image. The plurality of pixels P0 are arranged, for example, in a matrix along the X-axis and the Y-axis. Each pixel P0 includes a sub-pixel PB, a sub-pixel PG, and a sub-pixel PR. The sub-pixel PR emits light in a red wavelength range. The sub-pixel PG emits light in a green wavelength range. The sub-pixel PB emits light in a blue wavelength range. The red wavelength range is an example of a "third wavelength range" and is greater than 580 nm and equal to or less than 700 nm. The green wavelength range is an example of a "second wavelength range" and is equal to or greater than 500 nm and equal to or less than 580 nm. The blue wavelength range is an example of a "first wavelength range" and is equal to or greater than 400 nm and less than 500 nm.

[0016] In the following, when there is no need to distinguish between the sub-pixels PR, PG, and PB, they will be referred to as sub-pixels P. The sub-pixels P are elements that make up the pixel P0. The sub-pixels P are the smallest unit of an image to be displayed. One pixel P0 of a color image is expressed by the sub-pixels PR, PG, and PB. The sub-pixels P are controlled independently of the other sub-pixels P. In this embodiment, the arrangement of the sub-pixels P is a stripe arrangement.

[0017] In the following description, the reference numbers of elements related to the subpixel PR are followed by the suffix "R", the reference numbers of elements related to the subpixel PG are followed by the suffix "G", and the reference numbers of elements related to the subpixel PB are followed by the suffix "B". When no distinction is made between the emission colors, the suffixes "B", "G", and "R" are omitted.

[0018] 1, the electro-optical device 100 includes an element substrate 1 and a light-transmitting substrate 9. The electro-optical device 100 has a so-called top emission structure. The electro-optical device 100 emits light from the light-transmitting substrate 9.

[0019] In the peripheral region A20, a data line driving circuit 101, a scanning line driving circuit 102, a control circuit 103, and a plurality of external terminals 104 are arranged. The data line driving circuit 101 and the scanning line driving circuit 102 control the driving of each part included in each sub-pixel P. Image data is supplied to the control circuit 103 from a higher-level circuit (not shown). The control circuit 103 supplies various signals based on the image data to the data line driving circuit 101 and the scanning line driving circuit 102 to control the display of an image. Although not shown, an FPC (Flexible printed circuits) board or the like for electrical connection with the higher-level circuit is connected to the external terminal 104. A power supply circuit (not shown) is electrically connected to the electro-optical device 100.

[0020] 1B. Electrical Configuration of Electro-Optical Device 2 is an equivalent circuit diagram of the sub-pixel P shown in FIG. 1. The electro-optical device 100 has a plurality of scanning lines 13 and a plurality of data lines 14. In FIG. 2, one scanning line 13 and one data line 14 corresponding to one sub-pixel P are illustrated. The scanning line 13 extends along the X-axis, and the data line 14 extends along the Y-axis. Although not illustrated, the plurality of scanning lines 13 and the plurality of data lines 14 are arranged in a lattice pattern. Furthermore, each scanning line 13 is connected to the scanning line driving circuit 102 shown in FIG. 1, and each data line 14 is connected to the data line driving circuit 101 shown in FIG. 1.

[0021] As shown in FIG. 2, the sub-pixel P includes a light-emitting element 20 and a driving circuit 30. The light-emitting element 20 is composed of an OLED (organic light-emitting diode). The light-emitting element 20 has a pixel electrode 23, a counter electrode 25, and an organic layer 24. The pixel electrode 23 is provided for each sub-pixel P and functions as an anode. The counter electrode 25 is common to a plurality of sub-pixels P and functions as a cathode. The organic layer 24 is disposed between the pixel electrode 23 and the counter electrode 25. In the light-emitting element 20, holes supplied from the pixel electrode 23 and electrons supplied from the counter electrode 25 are recombined in the organic layer 24, so that the organic layer 24 generates light. The counter electrode 25 is electrically connected to a power supply line 16. A low-side potential Vct is supplied to the power supply line 16 from a power supply circuit (not shown). The pixel electrodes 23 can be set independently of each other and differently from each other.

[0022] The driving circuit 30 is a pixel circuit that controls the driving of the light emitting element 20, and controls the amount of current supplied to the pixel electrode 23. The driving circuit 30 has a switching transistor 31, a driving transistor 32, and a storage capacitor 33. The gate of the switching transistor 31 is electrically connected to the scanning line 13. In addition, one of the source or drain of the switching transistor 31 is electrically connected to the data line 14, and the other is electrically connected to the gate of the driving transistor 32. In addition, one of the source or drain of the driving transistor 32 is electrically connected to the power supply line 15, and the other is electrically connected to the pixel electrode 23. In addition, a high-side potential Vel is supplied to the power supply line 15 from a power supply circuit not shown. In addition, one electrode of the storage capacitor 33 is connected to the gate of the driving transistor 32, and the other electrode is connected to the power supply line 15.

[0023] When the scanning line driving circuit 102 activates a scanning signal to select a scanning line 13, a switching transistor 31 provided in the selected sub-pixel P is turned on. Then, a data signal is supplied from the data line 14 to the driving transistor 32 corresponding to the selected scanning line 13. The driving transistor 32 supplies a current corresponding to the potential of the supplied data signal, i.e., the potential difference between the gate and the source, to the light-emitting element 20. Then, the light-emitting element 20 emits light with a luminance corresponding to the magnitude of the current supplied from the driving transistor 32. When the scanning line driving circuit 102 cancels the selection of the scanning line 13 and the switching transistor 31 is turned off, the potential of the gate of the driving transistor 32 is held by the holding capacitance 33. Therefore, the light-emitting element 20 can emit light even after the switching transistor 31 is turned off.

[0024] It should be noted that the configuration of the drive circuit 30 is not limited to the illustrated configuration. For example, the drive circuit 30 may further include a transistor that controls conduction between the pixel electrode 23 and the drive transistor 32.

[0025] 1C. Planar arrangement at pixel P0 Fig. 3 is a schematic plan view of one pixel P0 of the electro-optical device 100 shown in Fig. 1. In Fig. 3, elements of one pixel P0 are representatively illustrated.

[0026] 3, the element substrate 1 has a set of a light-emitting element 20R, a light-emitting element 20G, and a light-emitting element 20B for each pixel P0. The light-emitting element 20R is a light-emitting element 20 provided in the sub-pixel PR. The light-emitting element 20G is a light-emitting element 20 provided in the sub-pixel PG. The light-emitting element 20B is a light-emitting element 20 provided in the sub-pixel PB.

[0027] The light emitting element 20R is provided with a pixel electrode 23R. The pixel electrode 23R is a pixel electrode 23 provided in the sub-pixel PR. The light emitting element 20G is provided with a pixel electrode 23G. The pixel electrode 23G is a pixel electrode 23 provided in the sub-pixel PG. The light emitting element 20B is provided with a pixel electrode 23B. The pixel electrode 23B is a pixel electrode 23 provided in the sub-pixel PB.

[0028] The light emitting element 20R has a light emitting region AR. Light in the red wavelength range is emitted from the light emitting region AR. The light emitting element 20G has a light emitting region AG. Light in the green wavelength range is emitted from the light emitting region AG. The light emitting element 20B has a light emitting region AB. Light in the blue wavelength range is emitted from the light emitting region AB.

[0029] The distance L0 between two adjacent light-emitting regions A is equal to each other in the illustrated example, but may be different from each other. For example, the distance L0 is the shortest distance between the light-emitting region AR and the light-emitting region AG. Also, for example, the distance L0 is the shortest distance between the light-emitting region AG and the light-emitting region AB. Also, the pitch L1 of the multiple light-emitting regions A, i.e., the center-to-center distance, is equal to each other in the illustrated example, but may be different from each other.

[0030] 3, the shape of each of the light emitting regions AR, AG, and AB in a plan view is a rectangle, but it may be another polygon such as an octagon, or it may be a circle. The shapes of the light emitting regions AR, AG, and AB in a plan view may be different from each other, or may be the same as each other.

[0031] 1D. Cross-sectional structure of pixel P0 Fig. 4 is a cross-sectional view of the electro-optical device 100 of Fig. 1. For ease of explanation, Fig. 4 shows each element of the sub-pixels PB, PG, and PR in one cross section.

[0032] 4, the electro-optical device 100 includes an element substrate 1, an adhesive layer 90, and a light-transmitting substrate 9. The element substrate 1 includes a substrate 10, a reflective layer 21R, a reflective layer 21G, a reflective layer 21B, a laminate 22, a pixel electrode 23R, a pixel electrode 23G, a pixel electrode 23B, an organic layer 24, a counter electrode 25, a sealing layer 26, an element isolation layer 27, and a colored layer 5.

[0033] The substrate 10 includes a flat base 11 and an inorganic insulating layer 12. The base 11 is, for example, a silicon substrate. The inorganic insulating layer 12 includes a plurality of interlayer insulating films. Each interlayer insulating film includes an inorganic material containing silicon, such as silicon oxide. The inorganic insulating layer 12 is provided with the aforementioned drive circuit 30. The drive circuit 30 provided in the subpixel PR is drive circuit 30R, which controls the amount of current supplied to the pixel electrode 23R. The drive circuit 30 provided in the subpixel PG is drive circuit 30G, which controls the amount of current supplied to the pixel electrode 23G. The drive circuit 30 provided in the subpixel PB is drive circuit 30B, which controls the amount of current supplied to the pixel electrode 23B.

[0034] A part of the driving circuit 30 may be formed in a part of the base 11. The various wirings and the like provided on the substrate 10 include, for example, a metal such as aluminum (Al) or a metal compound such as titanium nitride, and may be a single layer or multiple layers.

[0035] On the substrate 10, a reflective layer 21R, a reflective layer 21G, and a reflective layer 21B are disposed for each pixel P0. The reflective layer 21R, the reflective layer 21G, and the reflective layer 21B are disposed spaced apart from one another. The reflective layer 21R is disposed in the subpixel PR. The reflective layer 21R is disposed between the substrate 10 and the pixel electrode 23R, and faces the pixel electrode 23R. The reflective layer 21G is disposed in the subpixel PG. The reflective layer 21G is disposed between the substrate 10 and the pixel electrode 23G, and faces the pixel electrode 23G. The reflective layer 21B is disposed in the subpixel PB. The reflective layer 21B is disposed between the substrate 10 and the pixel electrode 23B, and faces the pixel electrode 23B.

[0036] Each reflective layer 21 has light reflectivity. Examples of materials for each reflective layer 21 include metals such as aluminum and silver (Ag), or alloys of these metals. For example, each reflective layer 21 is composed of a laminate of an aluminum film and a titanium nitride film. The thickness of the reflective layer 21 is not particularly limited, but is, for example, 100 nm or more and 200 nm or less.

[0037] The reflective layer 21R is electrically connected to the driving circuit 30R via a contact (not shown). The reflective layer 21G is electrically connected to the driving circuit 30G via a contact (not shown). The reflective layer 21B is electrically connected to the driving circuit 30B via a contact (not shown).

[0038] A laminate 22 is disposed on the multiple reflective layers 21. The laminate 22 includes a reflection-enhancing film 221, an insulating film 222, a first light-transmitting layer 224, a second light-transmitting layer 225, and a third light-transmitting layer 226. The laminate 22 is provided for adjusting the optical distance L, which will be described later.

[0039] The enhanced reflection film 221 is disposed on the multiple reflective layers 21. The enhanced reflection film 221 is provided to increase the light reflectivity of the reflective layers 21. The enhanced reflection film 221 has light transparency and insulating properties. The enhanced reflection film 221 includes, for example, silicon oxide (SiOx). The enhanced reflection film 221 has a thickness of, for example, 20 nm to 50 nm or less.

[0040] An insulating film 222 is disposed on the enhanced reflection film 221. The insulating film 222 separates and insulates the multiple reflective layers 21 from one another. The insulating film 222 divides the reflective layers 21 into sub-pixels P. The insulating film 222 has recesses 222a disposed in two adjacent reflective layers 21. The recesses 222a are filled with a filling portion 223. The insulating film 222 and the filling portion 223 include, for example, silicon nitride. The insulating film 222 has a thickness of, for example, 20 nm to 50 nm or less.

[0041] A first light transmitting layer 224, a second light transmitting layer 225, and a third light transmitting layer 226 are laminated on the insulating film 222. The first light transmitting layer 224, the second light transmitting layer 225, and the third light transmitting layer 226 have light transmitting properties and insulating properties, and are provided to adjust the optical distance L between each reflective layer 21 and the counter electrode 25.

[0042] The first light transmitting layer 224 is uniformly disposed in the sub-pixels PR, PG, and PB. The second light transmitting layer 225 is disposed in the sub-pixel PR, and is not disposed in the sub-pixels PG and PB. The third light transmitting layer 226 is disposed in the sub-pixels PR and PG, and is not disposed in the sub-pixel PB. Examples of the materials of the first light transmitting layer 224, the second light transmitting layer 225, and the third light transmitting layer 226 include inorganic silicon materials such as silicon oxide and silicon nitride. The thickness of the first light transmitting layer 224 is, for example, 20 nm 50 nm or less. The thickness of the second light transmitting layer 225 is, for example, 30 nm 80 nm or less. The thickness of the third light transmitting layer 226 is, for example, 30 nm 150 nm or less.

[0043] The laminate 22 includes an optical adjustment layer 220R, an optical adjustment layer 220G, and an optical adjustment layer 220B. The optical adjustment layer 220R is a portion of the laminate 22 corresponding to the subpixel PR, and is disposed between the reflective layer 21R and the light-emitting element 20R. The optical adjustment layer 220R includes a reflection-enhancing film 221, an insulating film 222, a first transparent layer 224, a second transparent layer 225, and a third transparent layer 226. The optical adjustment layer 220G is a portion of the laminate 22 corresponding to the subpixel PG, and is disposed between the reflective layer 21G and the light-emitting element 20G. The optical adjustment layer 220G includes a reflection-enhancing film 221, an insulating film 222, a first transparent layer 224, and a third transparent layer 226. The optical adjustment layer 220B is a portion of the laminate 22 corresponding to the subpixel PB, and is disposed between the reflective layer 21B and the light-emitting element 20B. The optical adjustment layer 220B includes a reflection-increasing film 221, an insulating film 222, and a first light-transmitting layer 224.

[0044] The lengths in the Z1 direction of optical adjustment layer 220R, optical adjustment layer 220G, and optical adjustment layer 220B, i.e., the thicknesses, are different from one another. Specifically, the thickness of optical adjustment layer 220R decreases in this order, followed by the thickness of optical adjustment layer 220G and the thickness of optical adjustment layer 220B.

[0045] The optical adjustment layer 220R is a layer that adjusts the optical distance LR. The optical distance LR is the optical distance between the reflective layer 21R and the counter electrode 25. Specifically, the optical distance LR is the optical distance between the surface of the reflective layer 21R facing the pixel electrode 23R and the surface of the counter electrode 25 opposite to the pixel electrode 23R. The optical adjustment layer 220G is a layer that adjusts the optical distance LG. The optical distance LG is the optical distance between the reflective layer 21G and the counter electrode 25. Specifically, the optical distance LG is the optical distance between the surface of the reflective layer 21G facing the pixel electrode 23G and the surface of the counter electrode 25 opposite to the pixel electrode 23G. The optical adjustment layer 220B is a layer that adjusts the optical distance LB. The optical distance LB is the optical distance between the reflective layer 21B and the counter electrode 25. Specifically, the optical distance LB is the optical distance between the surface of the reflective layer 21B facing the pixel electrode 23B and the surface of the counter electrode 25 opposite the pixel electrode 23B.

[0046] The laminate 22 is also provided with contact electrodes 28R, 28G, and 28B. Each of the contact electrodes 28R, 28G, and 28B is a trench-type electrode provided along the inner wall surface of a contact hole penetrating the reflection-enhancing film 221, the insulating film 222, and the first translucent layer 224. The contact electrode 28R electrically connects the reflective layer 21R and the pixel electrode 23R. The contact electrode 28G electrically connects the reflective layer 21G and the pixel electrode 23G. The contact electrode 28B electrically connects the reflective layer 21B and the pixel electrode 23B.

[0047] An insulating protective film 280 is disposed between the contact electrode 28 and the first light transmitting layer 224. Examples of materials for the protective film 280 include inorganic silicon materials such as silicon oxide. Examples of materials for the contact electrode 28 include metals such as tungsten (W), titanium (Ti), chromium (Cr), iron (Fe), and aluminum, metal nitrides, and metal silicides. Also, a columnar contact plug may be used as the contact electrode 28 instead of a trench-type electrode.

[0048] A plurality of pixel electrodes 23 are disposed on the laminate 22. Pixel electrodes 23R, 23G, and 23B are provided for each pixel P0. Each pixel electrode 23 overlaps the corresponding reflective layer 21 in a planar view. Each pixel electrode 23 has optical transparency and electrical conductivity. Examples of materials for the pixel electrodes 23 include transparent conductive materials such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide).

[0049] An element isolation layer 27 having a plurality of openings is disposed on the laminate 22. The element isolation layer 27 covers each outer edge of the plurality of pixel electrodes 23. The plurality of pixel electrodes 23 are insulated from each other by the element isolation layer 27. A plurality of light-emitting regions A are defined by the plurality of openings in the element isolation layer 27. The light-emitting region A can also be defined as a region where the organic layer 24 and the pixel electrodes 23 are in contact with each other. Examples of materials for the element isolation layer 27 include silicon-based inorganic materials such as silicon oxide and silicon nitride. The thickness of the element isolation layer 27 is, for example, 10 nm or more and 40 nm or less.

[0050] An organic layer 24 is disposed on the pixel electrodes 23. The organic layer 24 includes an organic light-emitting material. The organic layer 24 has a different light-emitting functional layer 200 for each emitted color. Specifically, the organic layer 24 includes a light-emitting functional layer 200R corresponding to the sub-pixel PR, a light-emitting functional layer 200G corresponding to the sub-pixel PG, and a light-emitting functional layer 200B corresponding to the sub-pixel PB. As will be described in detail later, the light-emitting functional layer 200 is provided with a different light-emitting layer 244 for each emitted color.

[0051] The counter electrode 25 is disposed on the organic layer 24. The counter electrode 25 is disposed between the organic layer 24 and the colored layer 5. The counter electrode 25 is a semi-transmissive reflective film having semi-transmissivity. Therefore, the counter electrode 25 has light reflectivity and light transmittance. The counter electrode 25 also has electrical conductivity. The counter electrode 25 is formed of an alloy containing Ag, such as MgAg.

[0052] The pixel electrode 23R, the light-emitting functional layer 200R, and the counter electrode 25 form a light-emitting element 20R. The pixel electrode 23G, the light-emitting functional layer 200G, and the counter electrode 25 form a light-emitting element 20G. The pixel electrode 23B, the light-emitting functional layer 200B, and the counter electrode 25 form a light-emitting element 20B.

[0053] Furthermore, an optical resonant structure 29R is configured by the reflective layer 21R and the counter electrode 25. The optical resonant structure 29R is provided corresponding to the light emitting element 20R. The optical resonant structure 29R causes light in the red wavelength region to be multiple-reflected between the reflective layer 21R and the counter electrode 25. Therefore, the light in the red wavelength region resonates between the reflective layer 21R and the counter electrode 25, and is emitted from the counter electrode 25.

[0054] An optical resonant structure 29G is configured by the reflective layer 21G and the counter electrode 25. The optical resonant structure 29G is provided corresponding to the light emitting element 20G. The optical resonant structure 29G causes light in the green wavelength range to be multiple-reflected between the reflective layer 21G and the counter electrode 25. Therefore, the light in the green wavelength range resonates between the reflective layer 21G and the counter electrode 25, and is emitted from the counter electrode 25.

[0055] An optical resonant structure 29B is configured by the reflective layer 21B and the counter electrode 25. The optical resonant structure 29B is provided corresponding to the light emitting element 20B. The optical resonant structure 29B causes light in the blue wavelength region to be multiple-reflected between the reflective layer 21B and the counter electrode 25. Therefore, the light in the blue wavelength region resonates between the reflective layer 21B and the counter electrode 25, and is emitted from the counter electrode 25.

[0056] When the resonant wavelength of each of the optical resonant structures 29R, 29G, and 29B is λ0, the following relational expression [1] holds: Φ (radian) in the relational expression [1] represents the sum of the phase shifts occurring during transmission and reflection between the reflective layer 21R, 21G, or 21B and the counter electrode 25. {(2×L0) / λ0+Φ} / (2π)=m0 (m0 is an integer) [1] The optical distances LR, LG, and LB are set so that the peak wavelength of the light in the predetermined wavelength range is the wavelength λ0. This setting enhances the light in the predetermined wavelength range, thereby increasing the intensity of the light and narrowing its spectrum.

[0057] A light-transmitting sealing layer 26 is disposed on the counter electrode 25. The sealing layer 26 protects the plurality of light-emitting elements 20. The sealing layer 26 has gas barrier properties, and protects each part of the lower layer from external moisture or oxygen, for example. By providing the sealing layer 26, it is possible to suppress deterioration of the light-emitting elements 20 compared to a case where the sealing layer 26 is not provided. Therefore, it is possible to improve the quality reliability of the electro-optical device 100. The sealing layer 26 includes, for example, inorganic materials such as silicon oxynitride (SiON), silicon nitride (SiN), and aluminum oxide (Al2O3), or resin materials such as epoxy resin, and is configured as a single layer or multiple layers.

[0058] The coloring layer 5 is disposed on the sealing layer 26. The coloring layer 5 is a color filter that selectively transmits light in a predetermined wavelength range. The predetermined wavelength range includes a peak wavelength λ0 for each emitted color. The coloring layer 5 has a coloring portion 51R, a coloring portion 51G, and a coloring portion 51B. The coloring portion 51R is provided corresponding to the sub-pixel PR and selectively transmits light in a red wavelength range. The coloring portion 51G is provided corresponding to the sub-pixel PG and selectively transmits light in a green wavelength range. The coloring portion 51B is provided corresponding to the sub-pixel PB and selectively transmits light in a blue wavelength range. By providing such a coloring layer 5, it is possible to increase the color purity of the light emitted from each sub-pixel P compared to a case where the coloring layer 5 is not provided. The coloring layer 5 is made of a resin material such as an acrylic photosensitive resin material containing a coloring material. The coloring material is a pigment or a dye.

[0059] A light-transmitting substrate 9 is bonded onto the above-described element substrate 1 via an adhesive layer 90. The adhesive layer 90 is a transparent adhesive using a resin material such as an epoxy resin or an acrylic resin. The light-transmitting substrate 9 is a cover that protects the element substrate 1. The light-transmitting substrate 9 is formed of, for example, a glass substrate or a quartz substrate.

[0060] 1E. Organic layer 24 Fig. 5 is a schematic diagram of the electro-optical device 100 shown in Fig. 4. As described above, as shown in Fig. 5, the organic layer 24 includes a hole injection layer 241, a hole transport layer 242, an electron blocking layer 243, a light emitting section 240, a hole blocking layer 245, an electron transport layer 246, and an electron injection layer 247. The hole injection layer 241, the hole transport layer 242, the electron blocking layer 243, the light emitting section 240, the hole blocking layer 245, the electron transport layer 246, and the electron injection layer 247 are laminated in this order.

[0061] The hole injection layer 241 is abbreviated as HIL. The hole transport layer 242 is abbreviated as HTL. The electron blocking layer 243 is abbreviated as EBL. The light emitting layer 244 is abbreviated as EML. The hole blocking layer is abbreviated as HBL. The electron transport layer 246 is abbreviated as ETL. The electron injection layer 247 is abbreviated as EIL. Note that each layer other than the light emitting section 240 may be omitted as appropriate. Also, layers other than the layers shown in FIG. 5 may be provided.

[0062] The hole injection layer 241 is in contact with each pixel electrode 23, which is an anode, and is a layer that injects holes from each pixel electrode 23. The hole transport layer 242 is a layer that transports holes to the light-emitting section 240. The electron blocking layer 243 is a layer that transports holes and blocks the movement of electrons and excitons generated in the light-emitting layer 244. The electron injection layer 247 is in contact with the counter electrode 25, which is a cathode, and is a layer that injects electrons from the counter electrode 25. The electron transport layer 246 is a layer that transports electrons to the light-emitting section 240. The hole blocking layer 245 is a layer that transports electrons and blocks the movement of holes and excitons. Known materials can be used for the materials of each of these layers.

[0063] The light-emitting section 240 includes a different light-emitting layer 244 for each emitted color, and is painted differently for each emitted color. Specifically, the light-emitting section 240 includes a light-emitting layer 244R, a light-emitting layer 244G, and a light-emitting layer 244B. The light-emitting layer 244R emits light in a red wavelength range. The light-emitting layer 244G emits light in a green wavelength range. The light-emitting layer 244B emits light in a blue wavelength range. In each light-emitting layer 244, holes and electrons recombine, and excitons are generated by the energy released during this recombination, and the excitons emit fluorescence or phosphorescence when returning to the ground state. In other words, the light-emitting element 20R emits light in a red wavelength range, the light-emitting element 20G emits light in a green wavelength range, and the light-emitting element 20B emits light in a blue wavelength range.

[0064] Moreover, each light-emitting layer 244 includes, for example, a host material and an organic light-emitting material as a dopant material corresponding to each color. The organic light-emitting material is a phosphorescent material or a fluorescent material. The light-emitting layer 244R includes a dopant material corresponding to a red wavelength range, and the dopant material is preferably a phosphorescent material from the viewpoint of light-emitting efficiency. The light-emitting layer 244G includes a dopant material corresponding to a green wavelength range, and the dopant material is preferably a phosphorescent material from the viewpoint of light-emitting efficiency. The light-emitting layer 244B includes a dopant material corresponding to a blue wavelength range. The dopant material is preferably phosphorescent from the viewpoint of light-emitting efficiency, but may be fluorescent from the viewpoint of expanding the selection of materials. Each of the light-emitting layers 244R and 244G may also include a fluorescent material.

[0065] As described above, the organic layer 24 includes the light-emitting functional layer 200R, the light-emitting functional layer 200G, and the light-emitting functional layer 200B. The light-emitting functional layer 200R is disposed between the pixel electrode 23R and the counter electrode 25, and is in contact with the pixel electrode 23R and the counter electrode 25. The light-emitting functional layer 200G is disposed between the pixel electrode 23G and the counter electrode 25, and is in contact with the pixel electrode 23G and the counter electrode 25. The light-emitting functional layer 200B is disposed between the pixel electrode 23B and the counter electrode 25, and is in contact with the pixel electrode 23B and the counter electrode 25.

[0066] Moreover, the light-emitting functional layer 200R includes the above-mentioned light-emitting layer 244R. The light-emitting functional layer 200G includes the light-emitting layer 244G. The light-emitting functional layer 200B includes the light-emitting layer 244B. Therefore, the light-emitting elements 20R, 20G, and 20B include light-emitting layers 244 that are different from each other. The material constituting the light-emitting layer 244R, the material constituting the light-emitting layer 244G, and the material constituting the light-emitting layer 244B are different from each other. Therefore, in this embodiment, the material of the light-emitting layer 244 is different for each light-emitting element 20.

[0067] Since the material of the light-emitting layer 244 is different for each light-emitting element 20, the light extraction efficiency for each emitted color can be improved compared to when the material of the light-emitting layer 244 is common to each light-emitting element 20. That is, in this embodiment, since each of the light-emitting layers 244R, 244G, and 244B emits light of a corresponding color, it is possible to reduce the generation of unused light compared to the conventional configuration in which a light-emitting layer that realizes white light emission is provided in common to a plurality of light-emitting elements 20.

[0068] Furthermore, as described above, an optical resonant structure 29R is provided corresponding to the light emitting element 20R. An optical resonant structure 29G is provided corresponding to the light emitting element 20G. An optical resonant structure 29B is provided corresponding to the light emitting element 20B. Thus, an optical resonant structure 29 is provided for each light emitting element 20.

[0069] By providing the optical resonant structure 29 for each light-emitting element 20, it is possible to increase the intensity of the light and improve the color purity by narrowing the spectrum. Therefore, by providing the light-emitting layer 244 for each light-emitting element 20 and providing the optical resonant structure 29 for each light-emitting element 20, it is possible to provide an electro-optical device 100 that is extremely efficient and has high color purity.

[0070] As described above, since the light-emitting layers 244 are painted for each emitted color, the light-emitting layers 244 emitting a predetermined color do not overlap with the light-emitting layers 244 of other colors in a planar view. Specifically, the light-emitting layer 244B does not overlap with the light-emitting regions AG and AR in a planar view. The light-emitting layer 244G does not overlap with the light-emitting regions AB and AR in a planar view. The light-emitting layer 244R does not overlap with the light-emitting regions AB and AG in a planar view. By not overlapping the light-emitting layers 244 emitting a predetermined color with the light-emitting layers 244 of other colors in a planar view, problems such as emission of unintended colors can be avoided.

[0071] As described above, the hole injection layer 241, the hole transport layer 242, the electron blocking layer 243, the hole blocking layer 245, the electron transport layer 246, and the electron injection layer 247 are common to the light-emitting elements 20R, 20G, and 20B. In other words, the layers other than the light-emitting section 240 included in the organic layer 24 are common to the light-emitting elements 20R, 20G, and 20B.

[0072] The organic layer 24 is formed by, for example, a printing method such as an inkjet method, or a deposition method using a mask. In particular, it is very difficult to paint different colors by deposition. This is because not only is it difficult to process the mask itself accurately, but it is also difficult to align the deposition mask in a vacuum with the elements below the organic layer 24 accurately. Furthermore, when the electro-optical device 100 is used in a microdisplay, the area of ​​the light-emitting region A is very small. Therefore, it is very difficult to paint different colors by emitting light.

[0073] In addition, the distance L0 between the light-emitting regions A must be sufficiently secured while securing the planar area of ​​the light-emitting regions A. If the distance L0 is not sufficiently secured, blurring or shadows may occur in the image display. In particular, since the sub-pixels P are arranged at high density in a microdisplay, it is difficult to secure a sufficient distance L0. If the planar area of ​​the light-emitting region A is prioritized and the distance L0 is made too narrow, it will affect the brightness and lifespan of the electro-optical device 100. Therefore, when forming the organic layer 24 by the vapor deposition method, it is desirable to reduce the number of times of coating. The more the number of times of coating, the higher the probability that the position of the vapor-deposited film will deviate from the target position. For this reason, when considering the characteristic variation and the yield, it is preferable to reduce the number of times of coating as much as possible.

[0074] Therefore, since the layers other than the light-emitting section 240 included in the organic layer 24 are common to the light-emitting elements 20R, 20G, and 20B, there is no need to paint the layers other than the light-emitting section 240 separately. This makes it possible to suppress variations in characteristics and a decrease in yield. As a result, the quality of the electro-optical device 100 can be improved.

[0075] Fig. 6 is a diagram showing an electro-optical device 100x of a comparative example. The electro-optical device 100x of the comparative example shown in Fig. 6 includes electron blocking layers 243Rx, 243Gx, and 243Bx, and the electron blocking layer 243 is painted differently for each emitted color. For this reason, in the comparative example, in addition to the light-emitting section 240, layers other than the light-emitting section 240 are also painted differently. Painting the light-emitting section 240 and layers other than the light-emitting section 240 differently is very difficult compared to painting only the light-emitting section 240 differently.

[0076] When only the light-emitting portion 240 is painted according to the emission color, it is sufficient to paint the light-emitting portion 240 three times for each pixel P0. In contrast, when the electron blocking layer 243 and the light-emitting portion 240 are each painted according to the emission color, six paintings are required for each pixel P0. Therefore, as in this embodiment, the layers other than the light-emitting portion 240 included in the organic layer 24 are common to the light-emitting elements 20R, 20G, and 20B, so that an electro-optical device 100 with high resolution and high color purity can be provided.

[0077] In addition, in the comparative example, the laminate 22 including the optical adjustment layer 220 is omitted. In the comparative example, the electron blocking layer 243 is painted differently to vary the thickness for each emitted color, so that the optical distance L can be adjusted without providing the optical adjustment layer 220. When the optical distance L is adjusted using the electron blocking layer 243, the thickness of the organic layer 24 tends to be thicker than when the optical distance L is adjusted by providing the optical adjustment layer 220. This results in a high driving voltage. Therefore, it is not particularly suitable for using the electro-optical device 100 in a microdisplay.

[0078] For example, the driving transistors 32 used to drive each sub-pixel P of a microdisplay have a lower withstand voltage than those of a large display. In the case of a high pixel density of several thousand ppi, only a voltage of about several volts can be used for each driving circuit 30. For this reason, it is preferable that the driving voltage of the light-emitting element 20 is low. If the voltage required to apply the same amount of current is low, the electro-optical device 100 can emit light with a higher luminance, and the power consumption of the entire electro-optical device 100 can be reduced by using driving transistors 32 with a lower withstand voltage.

[0079] Moreover, the thickness of each layer of the organic layer 24 is not particularly limited. However, it is preferable that the thickness D3 of the electron blocking layer 243 is thinner than the thickness D4 of each light-emitting layer 244. When the thickness D3 is thinner than the thickness D4, the driving voltage of each light-emitting element 20 can be reduced compared to when the thickness D3 is thicker. Furthermore, in this embodiment, since the optical adjustment layer 220 is provided, it is not necessary to paint the electron blocking layer 243 separately to adjust the optical distance L as in the comparative example. Therefore, even if the thickness D3 is thinner than the thickness D4, the function of the electron blocking layer 243 can be sufficiently exhibited.

[0080] Similarly, the thickness D5 of the hole blocking layer 245 is preferably thinner than the thickness D4 of each light-emitting layer 244. When the thickness D5 is thinner than the thickness D4, the function of the hole blocking layer 245 can be sufficiently exhibited while the driving voltage of each light-emitting element 20 can be reduced, compared to when the thickness D5 is thicker.

[0081] The thickness D1 of the hole injection layer 241 is not particularly limited, but is, for example, 5 nm or more and 15 nm or less. The thickness D2 of the hole transport layer 242 is not particularly limited, but is, for example, 20 nm or more and 50 nm or less. The thickness D3 of the electron blocking layer 243 is not particularly limited, but is, for example, 5 nm or more and 15 nm or less. The thickness D5 of the hole blocking layer 245 is not particularly limited, but is, for example, 5 nm or more and 15 nm or less. The thickness D6 of the electron transport layer 246 is not particularly limited, but is, for example, 20 nm or more and 50 nm or less. The thickness D7 of the electron injection layer 247 is not particularly limited, but is, for example, 0.5 nm or more and 15 nm or less. The thickness D4 of each of the light emitting layers 244R, 244G, and 244B is not particularly limited, but is, for example, 20 nm or more and 50 nm or less.

[0082] The thicknesses D4 of the light-emitting layers 244R, 244G, and 244B may be different from each other, but are preferably equal to each other. By making the thicknesses D4 of the light-emitting layers 244R, 244G, and 244B equal to each other, it is easier to paint them differently than if they were different from each other.

[0083] In addition, the thickness D0 of each of the light-emitting functional layers 200R, 200G, and 200B is not particularly limited, but is preferably 80 nm or more and 150 nm or less. By having each thickness D0 within this range, the driving voltage can be reduced compared to when it is outside the range, and the risk of leakage due to foreign matter such as particles can be suppressed. In order to significantly exert this effect, each thickness D0 is more preferably 90 nm or more and 140 nm or less, and even more preferably 100 nm or more and 130 nm or less.

[0084] If the thickness D0 is too thick, the driving voltage becomes high, which may make it difficult to use the electro-optical device 100 in a microdisplay. If the thickness D0 is too thin, leakage may occur easily due to foreign matter such as particles.

[0085] As described above, the electro-optical device 100 of this embodiment can be suitably used in a microdisplay. Therefore, the distance L0 shown in FIG. 3 is not particularly limited, but can be, for example, 3 μm or less. It is effective to use the electro-optical device 100 of this embodiment in a microdisplay in which the distance L0 is very small, 3 μm or less. In addition, the pitch L1 is not particularly limited, but can be 10 μm or less. When the pitch L1 is very small, 10 μm or less, it is particularly effective to use the electro-optical device 100 of this embodiment.

[0086] In addition, each of the above-mentioned electron blocking layer 243 and hole blocking layer 245 has a role of preventing excitons generated in each light-emitting layer 244 from escaping to the outside of each light-emitting layer 244. For this reason, each of the electron blocking layer 243 and the hole blocking layer 245 preferably has an excitation level equal to or higher than that of the host material or dopant material contained in the light-emitting layer 244.

[0087] When each light-emitting layer 244 emits phosphorescence, the lowest triplet excitation level of each of the electron blocking layer 243 and the hole blocking layer 245 is preferably 2.7 eV or more. By being equal to or greater than this value, it is possible to effectively prevent excitons generated in each light-emitting layer 244 from escaping to the outside, compared to a case where the lowest triplet excitation level is less than this value. Therefore, it is possible to increase the luminous efficiency of each light-emitting element 20.

[0088] When the light-emitting layers 244R and 244G emit phosphorescence and the light-emitting layer 244B emits fluorescence, the lowest triplet excitation level of each of the electron blocking layer 243 and the hole blocking layer 245 is preferably 2.5 eV or more. By being equal to or greater than this numerical value, it is possible to effectively prevent excitons generated in each light-emitting layer 244 from escaping to the outside, compared to a case where the lowest triplet excitation level is less than this numerical value. Therefore, the light-emitting efficiency of each light-emitting element 20 can be increased.

[0089] 2. Variations The above-described embodiment may be modified in various ways. Specific modifications that may be applied to the above-described embodiment are exemplified below.

[0090] In the above embodiment, one pixel P0 includes sub-pixels PR, PG, and PB. However, one pixel P0 may include any two of the sub-pixels PR, PG, and PB, and the remaining one may be omitted.

[0091] Also, for example, unless otherwise specified, one of the pixel electrodes 23B, 23G, and 23G corresponds to the "first pixel electrode", the other corresponds to the "second pixel electrode", and the remaining corresponds to the "third pixel electrode". Also, the light-emitting layer 244 of the light-emitting color corresponding to the "first pixel electrode" corresponds to the "first light-emitting layer", the light-emitting layer 244 of the light-emitting color corresponding to the "second pixel electrode" corresponds to the "second light-emitting layer", and the light-emitting layer 244 of the light-emitting color corresponding to the "third pixel electrode" corresponds to the "third light-emitting layer". The same is true for the "first light-emitting functional layer", "second light-emitting functional layer", "third light-emitting functional layer", "first light-emitting element", "second light-emitting element", "third light-emitting element", "first reflection layer", "second reflection layer", "third reflection layer", "first optical distance", "second optical distance", "third optical distance", "first optical adjustment layer", "second optical adjustment layer", "third optical adjustment layer", "first light-emitting region", "second light-emitting region", and "third light-emitting region".

[0092] Furthermore, the arrangement of the sub-pixels P is not limited to a stripe arrangement, and may be other arrangements, such as a Bayer arrangement, a rectangular arrangement, or a delta arrangement.

[0093] 3.Electronic equipment The electro-optical device 100 of the above-described embodiment can be applied to various electronic devices.

[0094] 3-1. Head-mounted display Fig. 7 is a plan view showing a schematic view of a part of a virtual image electro-optical device 700 which is an example of an electronic device. The virtual image electro-optical device 700 shown in Fig. 10 is a head mounted display (HMD) which is worn on the head of a viewer and displays an image. The virtual image electro-optical device 700 includes the electro-optical device 100 described above, a collimator 71, a light guide 72, a first reflective volume hologram 73, a second reflective volume hologram 74, and a control unit 79. The light emitted from the electro-optical device 100 is emitted as image light LL.

[0095] The control unit 79 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100. The collimator 71 is disposed between the electro-optical device 100 and the light guide 72. The collimator 71 converts the light emitted from the electro-optical device 100 into parallel light. The collimator 71 is composed of a collimator lens and the like. The light converted into parallel light by the collimator 71 enters the light guide 72.

[0096] The light guide 72 is flat and extends in a direction intersecting the direction of the light incident through the collimator 71. The light guide 72 reflects and guides the light inside. A light inlet through which the light enters and a light outlet through which the light exits are provided on a surface 721 of the light guide 72 facing the collimator 71. A first reflection type volume hologram 73 as a diffractive optical element and a second reflection type volume hologram 74 as a diffractive optical element are provided on a surface 722 opposite to the surface 721 of the light guide 72. The first reflection type volume hologram 73 is provided closer to the light outlet side than the second reflection type volume hologram 74. The first reflection type volume hologram 73 and the second reflection type volume hologram 74 have interference fringes corresponding to a predetermined wavelength range and diffract and reflect light in the predetermined wavelength range.

[0097] In a virtual image electro-optical device 700 having such a configuration, the image light LL that enters the light guide 72 from the light inlet is repeatedly reflected and propagates, and is guided from the light outlet to the observer's pupil EY, allowing the observer to observe an image composed of a virtual image formed by the image light LL.

[0098] The virtual image electro-optical device 700 includes the aforementioned electro-optical device 100. The aforementioned electro-optical device 100 has extremely high efficiency and high color purity. Therefore, by including the electro-optical device 100, it is possible to provide a virtual image electro-optical device 700 with high display quality.

[0099] The virtual image electro-optical device 700 may include a combining element such as a dichroic prism that combines the light emitted from the electro-optical device 100. In that case, the virtual image electro-optical device 700 may include, for example, an electro-optical device 100 that emits light in a blue wavelength range, an electro-optical device 100 that emits light in a green wavelength range, and an electro-optical device 100 that emits light in a red wavelength range.

[0100] 3-2.Personal Computers Fig. 8 is a perspective view showing a personal computer 400, which is an example of the electronic device of the present invention. The personal computer 400 shown in Fig. 8 includes the electro-optical device 100, a main body 403 provided with a power switch 401 and a keyboard 402, and a control unit 409. The control unit 409 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100. The personal computer 400 is of excellent quality since it includes the electro-optical device 100 described above.

[0101] In addition, examples of "electronic devices" equipped with the electro-optical device 100 include the virtual image electro-optical device 700 illustrated in FIG. 7 and the personal computer 400 illustrated in FIG. 8, as well as devices arranged close to the eyes, such as digital scopes, digital binoculars, digital still cameras, and video cameras. In addition, "electronic devices" equipped with the electro-optical device 100 are applied as mobile phones, smartphones, PDAs (Personal Digital Assistants), car navigation devices, and in-vehicle display units. In addition, "electronic devices" equipped with the electro-optical device 100 are applied as lighting that emits light. In addition, the electro-optical device 100 can be used, for example, as a flexible display.

[0102] Although the present invention has been described above based on the illustrated embodiments, the present invention is not limited to these. Furthermore, the configuration of each part of the present invention can be replaced with any configuration that exerts the same function as the above-mentioned embodiment, and any configuration can be added. Furthermore, the present invention may be configured to combine any configuration of the above-mentioned embodiment. [Explanation of symbols]

[0103] 1...element substrate, 5...colored layer, 9...light-transmitting substrate, 10...substrate, 11...base, 12...inorganic insulating layer, 13...scanning line, 14...data line, 15...power supply line, 16...power supply line, 20...light-emitting element, 20B...light-emitting element, 20G...light-emitting element, 20R...light-emitting element, 21...reflective layer, 21B...reflective layer, 21G...reflective layer, 21R...reflective layer, 22...laminated body, 23...pixel electrode, 23B...pixel electrode, 23G...pixel electrode, 23R...pixel electrode, 24...organic layer, 25...counter electrode, 26...sealing layer, 27...element isolation layer, 28...contact electrode, 28B...contact electrode, 28G...contact electrode, 28R... Contact electrode, 29...optical resonant structure, 29B...optical resonant structure, 29G...optical resonant structure, 29R...optical resonant structure, 30...drive circuit, 30B...drive circuit, 30G...drive circuit, 30R...drive circuit, 31...switching transistor, 32...drive transistor, 33...holding capacitance, 51B...coloring section, 51G...coloring section, 51R...coloring section, 71...collimator, 72...light guide, 73...first reflection type volume hologram, 74...second reflection type volume hologram, 79...control section, 90...adhesive layer, 100...electro-optical device, 100x...electro-optical device, 101...data line drive circuit, 102...driving circuit Scan line driving circuit, 103... control circuit, 104... external terminal, 200... light emitting functional layer, 200B... light emitting functional layer, 200G... light emitting functional layer, 200R... light emitting functional layer, 220... optical adjustment layer, 220B... optical adjustment layer, 220G... optical adjustment layer, 220R... optical adjustment layer, 221... reflection enhancing film, 222... insulating film, 222a... recess, 223... buried portion, 224... first light transmitting layer, 225... second light transmitting layer, 226... third light transmitting layer, 240... light emitting portion, 241... hole injection layer, 242... hole transport layer, 243... electron blocking layer, 243Gx... electron blocking layer, 243Rx... electron blocking layer, 24 3Bx...electron blocking layer, 244...light-emitting layer, 244B...light-emitting layer, 244G...light-emitting layer, 244R...light-emitting layer, 245...hole blocking layer, 246...electron transport layer, 247...electron injection layer, 280...protective film, 400...personal computer, 401...power switch, 402...keyboard, 403...main body, 409...control unit, 700...virtual image electro-optical device, 721...surface, 722...surface, A10...display area, A20...peripheral area, A...light-emitting area, AB...light-emitting area, AG...light-emitting area, AR...light-emitting area, D0...thickness, D1...thickness, D2...thickness, D3...thickness, D4...thickness,D5...thickness, D6...thickness, D7...thickness, EY...pupil, L0...distance, L1...pitch, L...optical distance, LB...optical distance, LG...optical distance, LR...optical distance, LL...image light, P0...pixel, P...subpixel, PB...subpixel, PG...subpixel, PR...subpixel.

Claims

1. a first light-emitting element that has a semi-transparent counter electrode, a light-transmitting first pixel electrode, and a first light-emitting functional layer that includes a first light-emitting layer, is disposed between the first pixel electrode and the counter electrode, and is in contact with the first pixel electrode and the counter electrode, and that emits light in a first wavelength range; a second light-emitting element that includes the counter electrode, a second pixel electrode having light transmissivity, and a second light-emitting functional layer that includes a second light-emitting layer and is disposed between the second pixel electrode and the counter electrode and in contact with the second pixel electrode and the counter electrode, and that emits light in a second wavelength range different from the first wavelength range; A first reflective layer; a first optical adjustment layer disposed between the first reflective layer and the first light-emitting element, the first optical adjustment layer adjusting a first optical distance between the first reflective layer and the counter electrode; A second reflective layer; and a second optical adjustment layer having a thickness different from that of the first optical adjustment layer, disposed between the second reflective layer and the second light-emitting element, and configured to adjust a second optical distance between the second reflective layer and the counter electrode; Equipped with the light in the first wavelength range emitted by the first light-emitting element resonates between the first reflective layer and the counter electrode and is emitted from the counter electrode; the light in the second wavelength range emitted by the second light-emitting element resonates between the second reflective layer and the counter electrode and is emitted from the counter electrode; A material constituting the first light-emitting layer and a material constituting the second light-emitting layer are different from each other. Electro-optical device.

2. The first light-emitting functional layer and the second light-emitting functional layer have a common electron blocking layer in contact with the first light-emitting layer and the second light-emitting layer.

2. The electro-optical device according to claim 1.

3. the thickness of the electron blocking layer is less than the thickness of each of the first light-emitting layer and the second light-emitting layer; 3. The electro-optical device according to claim 2.

4. When the light in the first wavelength range is light in a blue wavelength range and the first light-emitting layer emits phosphorescence, The lowest triplet excitation level of the electron blocking layer is 2.7 eV or more.

3. The electro-optical device according to claim 2.

5. When the light in the first wavelength range is light in a blue wavelength range, the light in the second wavelength range is light in a green wavelength range, and the first light-emitting layer emits fluorescence and the second light-emitting layer emits phosphorescence, The lowest triplet excitation level of the electron blocking layer is 2.5 eV or more.

3. The electro-optical device according to claim 2.

6. The thickness of each of the first light-emitting functional layer and the second light-emitting functional layer is 80 nm or more and 150 nm or less.

2. The electro-optical device according to claim 1.

7. the first light-emitting element has a first light-emitting region through which light in the first wavelength range passes; the second light emitting element has a second light emitting region through which light in the second wavelength range passes, the first light-emitting layer does not overlap the second light-emitting region in a plan view, The second light-emitting layer does not overlap the first light-emitting region in a plan view.

2. The electro-optical device according to claim 1.

8. The distance between the first light emitting region and the second light emitting region is 3 μm or less.

8. The electro-optical device according to claim 7.

9. The electro-optical device according to claim 1 ; and a control unit for controlling an operation of the electro-optical device.

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