Transfer mask, and, method for producing display device

Abstract

To provide a transfer mask capable of realizing a PDL having a small angle of inclination around a circumference of an opening section and a columnar section.SOLUTION: A transfer mask comprises a transfer pattern including a translucent portion, a first transmission portion, a second transmission portion, and a light shielding portion on a translucent substrate, the translucent substrate has an exposed hole shape, the first translucent portion is provided in a ring along an outer periphery of the translucent portion, the second transmission portion is provided in contact with the outer periphery of the first transmission portion, the transmittance T1 of the first transmission portion with respect to exposed light is higher than the transmittance T2 of the second transmission portion with respect to the exposed light, the light shielding portion is provided adjacent to the second transmission portion, and the light shielding portion is provided with a main pattern and a sub-pattern provided in at least a part of the outer periphery of the main pattern and has the unresolved line width and has a slit pattern provided between the main pattern and the sub-pattern and having unsolved line width.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a transfer mask and a method for manufacturing a display device. [Background technology]

[0002] Patent Document 1 discloses a photomask for manufacturing a display device, which has a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion, in order to form a resist pattern having a plurality of different residual film values ​​on a transfer target by exposure. In this photomask, the light-transmitting portion is formed by exposing a transparent substrate, and the light-shielding portion has a complete light-shielding portion in which at least a light-shielding film is formed on the transparent substrate, and a rim portion having a width γ formed in contact with the outer edge of the complete light-shielding portion and in which a semi-light-transmitting rim-forming film is formed on the transparent substrate. The semi-light-transmitting portion is sandwiched between the light-shielding portions, and the transparent substrate is exposed by a predetermined width α, and the width α is set so that the exposure light transmittance of the semi-light-transmitting portion is smaller than the exposure light transmittance of the light-transmitting portion. The rim-forming film has a transmittance Tr of 5 to 60 (%) for light of the representative wavelength of the exposure light, and a phase shift amount for light of the representative wavelength is 90 degrees or less.

[0003] Furthermore, Patent Document 2 describes an organic EL display device in which pixels are arranged in a matrix in a display region, the organic EL display device including an organic EL layer disposed in each pixel, a separation layer surrounding the edges of the organic EL layer and disposed between adjacent pixels, a resin layer that covers the entire display region and seals the organic EL layer, and a frame-shaped bank surrounding the edges of the resin layer, the organic EL display device being characterized in that the taper angle of the separation layer is different from the taper angle of the frame-shaped bank. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2020-140207 A [Patent Document 2] International Publication No. 2018 / 061195 Summary of the Invention [Problem to be solved by the invention]

[0005] Many products using organic electroluminescence (OLED) display devices have been developed for display devices with thin displays, such as smartphones, tablets, and televisions. In general, an insulating layer called a pixel defining layer (PDL) is formed in an OLED display device to separate the pixels of the light-emitting element.

[0006] An object of one embodiment of the present invention is to provide a transfer mask that can realize a PDL with a small inclination angle around an opening and a columnar portion. [Means for solving the problem]

[0007] The first aspect of the present invention is A transfer mask having a transfer pattern including a light-transmitting portion, a first transmitting portion, a second transmitting portion, and a light-shielding portion on a light-transmitting substrate, the light-transmitting portion has a hole shape through which the light-transmitting substrate is exposed, The first transmission portion is provided in an annular shape along an outer periphery of the light transmitting portion, The second transmission portion is provided in contact with an outer periphery of the first transmission portion, a transmittance T1 of the first transmitting portion for the exposure light is higher than a transmittance T2 of the second transmitting portion for the exposure light, the light-shielding portion is provided adjacent to the second light-transmitting portion, The light-shielding portion includes a main pattern, a sub-pattern provided on at least a part of the periphery of the main pattern and having an unresolved line width, and a slit pattern provided between the main pattern and the sub-pattern and having an unresolved line width. The present invention relates to a transfer mask.

[0008] A second aspect of the present invention is In the transfer mask according to the first aspect, a difference ΔT between the transmittance T1 and the transmittance T2 is 10% or more.

[0009] A third aspect of the present invention is In the transfer mask according to the first aspect, the transmittance T1 is 20% or more.

[0010] A fourth aspect of the present invention is In the transfer mask according to the first aspect, the transmittance T2 is 10% or more.

[0011] A fifth aspect of the present invention is In the transfer mask according to the first aspect, the main pattern and the sub-pattern have an optical density with respect to the exposure light of more than 2.0.

[0012] A sixth aspect of the present invention is a method for producing a composition comprising the steps of: an absolute value of a phase difference between the exposure light transmitted through the first transmission portion and the exposure light transmitted through the light transmitting portion is 90 degrees or less; an absolute value of a phase difference between the exposure light transmitted through the second transmission portion and the exposure light transmitted through the light transmitting portion is 90 degrees or less; The transfer mask according to the first aspect above, characterized in that the absolute value of the phase difference between the exposure light transmitted through the first transparent portion and the exposure light transmitted through the second transparent portion is 90 degrees or less.

[0013] A seventh aspect of the present invention is a method for producing a composition comprising the steps of: In the transfer mask according to the first aspect, the exposure light contains light having a wavelength of 313 nm or more and 436 nm or less.

[0014] An eighth aspect of the present invention is a method for producing a composition comprising the steps of: the first transmission portion is made of a first semi-transmission film provided on the light-transmitting substrate, the second transmission portion is formed by laminating the first semi-transmitting film and the second semi-transmitting film in random order on the light-transmitting substrate, The transfer mask according to the first aspect above is characterized in that the main pattern and the sub-pattern are formed by laminating the first semi-transparent film, the second semi-transparent film and a light-shielding film in any order on the light-transmitting substrate.

[0015] A ninth aspect of the present invention is a method for producing a composition comprising the steps of: In the transfer mask according to the eighth aspect, the second semi-transmitting film is made of a material having etching selectivity with respect to the first semi-transmitting film and the light-shielding film.

[0016] A tenth aspect of the present invention is a method for producing a composition comprising the steps of: preparing a transfer mask according to any one of the first to ninth aspects; forming a photosensitive resin film on a substrate, the photosensitive resin film being sensitive to the exposure light; a step of irradiating the photosensitive resin film with the exposure light transmitted through the transfer mask using an exposure device to expose and transfer the transfer pattern; performing a development process on the photosensitive resin film that has been exposed and transferred; The present invention relates to a method for manufacturing a display device, comprising the steps of:

[0017] An eleventh aspect of the present invention is a method for producing a composition comprising the steps of: After the development process, an opening and a columnar portion are formed in the photosensitive resin film, The method for manufacturing a display device according to the above-mentioned tenth aspect is characterized in that in the exposure transfer process, the transfer pattern is exposed and transferred so that an inclined portion having a cross-sectional inclination angle of 30 degrees or less is formed around the opening, and an inclined portion having a cross-sectional inclination angle of 30 degrees or less is formed around the columnar portion. Effect of the Invention

[0018] According to one embodiment of the present invention, it is possible to provide a transfer mask that can realize a PDL with a small inclination angle around the opening and the columnar portion. [Brief description of the drawings]

[0019] [Figure 1] FIG. 1 is a plan view showing a schematic diagram of a transfer mask 1 according to a first embodiment of the present invention. [Diagram 2]FIG. 2 is a schematic cross-sectional view of the transfer mask 1 of FIG. 1 taken along line AA. [Diagram 3] 3(a) to 3(e) are schematic views illustrating a method for manufacturing a transfer mask 1 according to a first embodiment of the present invention. [Figure 4] FIG. 4 is a schematic cross-sectional view of a transfer mask 2 according to a first modified example of the present invention. [Diagram 5] 5(a) and 5(b) are schematic diagrams illustrating a method for manufacturing a transfer mask 2 according to a first modification of the present invention. [Figure 6] FIG. 6 is a schematic cross-sectional view of a transfer mask 3 according to a second modification of the present invention. [Figure 7] 7(a) and 7(b) are schematic diagrams illustrating a method for manufacturing a transfer mask 3 according to a second modification of the present invention. [Figure 8] 8(a) and 8(b) are plan views that diagrammatically show a light blocking section 40 according to another embodiment of the present invention. [Figure 9] FIG. 9 is a graph showing the relationship between the width D and the inclination angle θ according to the first embodiment of the present invention. [Figure 10] FIG. 10 is a graph showing the relationship between the width D and the inclination angle θ according to the second embodiment of the present invention. [Figure 11] FIG. 11 is a graph showing certain conditions selected from the first and second embodiments of the present invention. [Figure 12] FIG. 12 is a schematic cross-sectional view of a PDL of an organic EL display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] <Inventor's findings> First, the findings obtained by the inventors will be described. Fig. 12 is a schematic cross-sectional view of a PDL of an organic EL display device. The PDL is made of, for example, photosensitive polyimide, and as shown in Fig. 12, includes an opening 200 for forming a light-emitting layer, a columnar portion 202 for supporting a mask when forming the light-emitting layer, and a flat portion 203 at an intermediate height between the opening 200 and the columnar portion 202. A first inclined portion 201 with an inclination angle θ is formed around the opening 200, and a second inclined portion 204 with an inclination angle φ is formed around the columnar portion 202.

[0021] After forming the light-emitting layer in the opening 200 of the PDL, it is necessary to seal the light-emitting layer with a sealant such as polyimide in order to maintain the light-emitting efficiency. At this time, the manufacturing yield can be improved by improving the wet spread of the sealant and the flatness of the sealant. Therefore, it is preferable that the inclination angle θ of the first inclined portion 201 of the PDL and the inclination angle φ of the second inclined portion 204 are small. Specifically, the inclination angles θ and φ are preferably, for example, 30 degrees or less, and more preferably 20 degrees or less. In addition, the lower limit values ​​of the inclination angles θ and φ are not particularly limited, but are preferably 10 degrees or more from the viewpoint of easily securing a sufficient thickness of the flat portion 203 (for example, 0.8 μm or more and 1.5 μm or less).

[0022] Next, an embodiment of the present invention will be described below with reference to the drawings. Note that the present invention is not limited to these examples, but is defined by the claims, and is intended to include all modifications within the meaning and scope of the claims.

[0023] First embodiment of the present invention (1) Configuration of transfer mask 1 First, the configuration of the transfer mask 1 of this embodiment will be described. FIG. 1 is a plan view showing the transfer mask 1 of this embodiment, and FIG. 2 is a schematic cross-sectional view taken along the line AA in FIG. 1. As shown in FIG. 1, the transfer mask 1 of this embodiment has a transfer pattern including a light-transmitting portion 10, a first transmission portion 20, a second transmission portion 30, and a light-shielding portion 40 on a light-transmitting substrate 100. The transfer mask 1 of this embodiment can be used, for example, to form a PDL of an organic EL display device. In particular, the transfer mask 1 of this embodiment can simultaneously form the openings 200 and the columnar portions 202 of the PDL.

[0024] The light-transmitting portion 10 is a hole-shaped region where the light-transmitting substrate 100 is exposed. In FIG. 1, the light-transmitting portion 10 is shown as a square (rectangular) hole-shaped example, but the light-transmitting portion 10 may be a circle or a polygonal hole-shaped other than a square. The light-transmitting portion 10 is a region corresponding to the opening 200 of the PDL when the PDL is formed, and the size of the light-transmitting portion 10 is not particularly limited and may be determined according to the design of the display device to be manufactured. In this specification, the transmittance of the exposure light (hereinafter, also simply referred to as exposure light) for exposing the transfer mask 1 is based on the light-transmitting portion 10 (i.e., the light-transmitting substrate 100) as a reference (100%).

[0025] As shown in FIG. 1, the first transmission portion 20 is a region provided in an annular shape along the outer periphery of the light-transmitting portion 10. In this specification, the term "annular shape" includes not only a circular shape but also a shape surrounding a polygonal hole such as a square shape. The first transmission portion 20 is configured to transmit a part of the exposure light. The first transmission portion 20 is a region necessary for reducing the inclination angle θ of the first inclined portion 201 located around the opening 200 of the PDL when forming the PDL. It is preferable that the first transmission portion 20 surrounds the entire outer periphery of the light-transmitting portion 10, but the first transmission portion 20 may have a shape in which a part of the annular region is missing (the missing part becomes a part of the second transmission portion 30) as long as the effect of the invention is obtained. In addition, the first transmission portion 20 is considered to be provided in an annular shape as long as it surrounds 80% or more of the outer periphery of the light-transmitting portion 10, even if a part of it is missing. The first transmission portion 20 preferably surrounds 90% or more of the outer periphery of the light transmitting portion 10, and more preferably surrounds 100% (the entire periphery).

[0026] 1, the second transmissive portion 30 is a region provided so as to be in contact with the outer periphery of the first transmissive portion 20. The second transmissive portion 30 is a region that corresponds to the flat portion 203 of the PDL when the PDL is formed. Also, the second transmissive portion 30 is a region that has the largest area among the light-transmitting portion 10, the first transmissive portion 20, the second transmissive portion 30, and the light-shielding portion 40, as shown in FIG.

[0027] As shown in FIG. 1, the light-shielding portion 40 is a region provided adjacent to the second transmission portion 30, and includes a main pattern 41, a sub-pattern 42 provided on at least a part of the periphery of the main pattern 41 (in this embodiment, annular) and having a line width that is not resolved, and a slit pattern 43 provided between the main pattern 41 and the sub-pattern 42 and having a line width that is not resolved. The light-shielding portion 40 is a region corresponding to the columnar portion 202 of the PDL when forming the PDL, and the sub-pattern 42 and the slit pattern 43 are regions required to reduce the inclination angle φ of the second inclined portion 204 located around the columnar portion 202 of the PDL. The main pattern 41 and the sub-pattern 42 are configured so that the exposure light is not substantially transmitted (light is shielded. For example, the optical density OD for the exposure light is greater than 2.0. Preferably, the OD is 2.5 or more, and more preferably, the OD is 3.0 or more), and the slit pattern 43 is configured so that the exposure light is partially transmitted. Note that sub-pattern 42 preferably surrounds 80% or more of the periphery of main pattern 41, more preferably surrounds 90% or more, and even more preferably surrounds 100% (the entire periphery).

[0028] In the transfer mask 1, the transmittance T1 of the first transmitting portion 20 is higher than the transmittance T2 of the second transmitting portion 30. This allows the inclination angle θ of the first inclined portion 201 located around the opening 200 to be small when forming the PDL.

[0029] The transfer mask 1 is preferably configured to suppress the occurrence of a phenomenon in which the amount of exposure light is attenuated due to the phase difference between the exposure light transmitted through each of the light-transmitting portion 10, the first transmission portion 20, and the second transmission portion 30. Specifically, it is preferable that the absolute value of the phase difference between the exposure light transmitted through the first transmission portion 20 and the exposure light transmitted through the light-transmitting portion 10 is 90 degrees or less, and the absolute value of the phase difference between the exposure light transmitted through the second transmission portion 30 and the exposure light transmitted through the light-transmitting portion 10 is 90 degrees or less, and the absolute value of the phase difference between the exposure light transmitted through the first transmission portion 20 and the exposure light transmitted through the second transmission portion 30 is 90 degrees or less. When the phase difference between the exposure light transmitted through each of the light-transmitting portion 10, the first transmission portion 20, and the second transmission portion 30 of the transfer mask 1 exceeds the above ranges, the inclination angle θ of the first inclined portion 201 of the PDL may become large. In contrast, by setting the phase difference between the exposure light transmitted through each of the light-transmitting portion 10, the first light-transmitting portion 20, and the second light-transmitting portion 30 of the transfer mask 1 within the above ranges, it is possible to reduce the inclination angle θ of the first inclined portion 201. The absolute value of the phase difference between the exposure light transmitted through the first light-transmitting portion 20 and the exposure light transmitted through the light-transmitting portion 10 is more preferably 80 degrees or less, and even more preferably 60 degrees or less. The absolute value of the phase difference between the exposure light transmitted through the second light-transmitting portion 30 and the exposure light transmitted through the light-transmitting portion 10 is more preferably 80 degrees or less, and even more preferably 60 degrees or less. The absolute value of the phase difference between the exposure light transmitted through the first light-transmitting portion 20 and the exposure light transmitted through the second light-transmitting portion 30 is more preferably 80 degrees or less, and even more preferably 60 degrees or less.

[0030] The width D of the first transmission portion 20 (that is, the distance between the boundary between the light transmitting portion 10 and the first transmission portion 20 and the boundary between the first transmission portion 20 and the second transmission portion 30) is preferably, for example, 1.5 μm or more. If the width D is less than 1.5 μm, the inclination angle θ of the first inclined portion 201 may not be sufficiently small. In contrast, by setting the width D to 1.5 μm or more, the inclination angle θ of the first inclined portion 201 can be sufficiently small. It is more preferable that the width D is larger than 1.5 μm, and even more preferable that it is 1.7 μm or more. On the other hand, it is preferable that the width D is 10 μm or less. If the width D exceeds 10 μm, the first transmission portion 20 and the light shielding portion 40 may come into contact with each other or be too close to each other. In contrast, by setting the width D to 10 μm or less, the interval between the first transmission portion 20 and the light shielding portion 40 can be sufficiently secured. It is more preferable that the width D is 7 μm or less, and even more preferable that it is 5 μm or less. If the width D exceeds 5 μm, the effect of reducing the inclination angle θ of the first inclined portion 201 may become saturated.

[0031] It is preferable that the width D of the first transmissive portion 20 is a substantially constant value (for example, within a range of an average value ±5%). For example, if the width D has a different value depending on the direction from the center of the light-transmitting portion 10, the inclination angle θ of the first inclined portion 201 may differ depending on the direction when forming the PDL. In contrast, by setting the width D to a substantially constant value, the inclination angle θ of the first inclined portion 201 can be made to a substantially constant value when forming the PDL. This can further improve the yield when manufacturing the display device.

[0032] In the light-shielding portion 40, the line width D1 of the sub-pattern 42 and the line width D2 of the slit pattern 43 are preferably, for example, 0.5 μm or more and 2.0 μm or less. If D1 and D2 are less than 0.5 μm, it is difficult to form the sub-pattern 42 and the slit pattern 43 in the light-shielding portion 40. In contrast, by setting D1 and D2 to 0.5 μm or more, it becomes easier to form the sub-pattern 42 and the slit pattern 43 in the light-shielding portion 40, and the effect of reducing the inclination angle φ of the second inclined portion 204 is easily obtained. On the other hand, if D1 and D2 exceed 2.0 μm, there is a possibility that the first transmission portion 20 and the light-shielding portion 40 may contact or be too close to each other. In contrast, by setting D1 and D2 to 2.0 μm or less, the distance between the first transmission portion 20 and the light-shielding portion 40 can be sufficiently secured. Furthermore, when this transfer mask 1 is used to expose and transfer the transfer pattern of the transfer mask 1 onto a photosensitive resin, which is performed when forming a PDL on a substrate that constitutes a display device, it is possible to prevent the sub-pattern 42 and the slit pattern 43 from being resolved on the photosensitive resin.

[0033] The ratio (D2 / D1) of the line width D2 of the slit pattern 43 to the line width D1 of the sub-pattern 42 is preferably, for example, 0.5 to 1.5, and more preferably 0.8 to 1.2, which makes it easier to obtain the effect of reducing the inclination angle φ of the second inclined portion 204.

[0034] It is preferable that the line width D1 of the sub-pattern 42 and the line width D2 of the slit pattern 43 are each substantially constant (for example, within a range of the average value ±5%). For example, if the line width D1 or the line width D2 has a different value depending on the direction from the center of the light-shielding part 40, the inclination angle φ of the second inclined part 204 may differ depending on the direction when the PDL is formed. In contrast, by setting the line width D1 and the line width D2 to substantially constant values, the inclination angle φ of the second inclined part 204 can be made substantially constant when the PDL is formed. This can further improve the yield when manufacturing the display device.

[0035] The difference ΔT [%] (= T1 - T2) between the transmittance T1 [%] of the first transmission section 20 and the transmittance T2 [%] of the second transmission section 30 is preferably, for example, 10% or more. If the transmittance difference ΔT is less than 10%, the inclination angle θ of the first inclined section 201 may not be sufficiently small. In contrast, by setting the transmittance difference ΔT to 10% or more, the inclination angle θ of the first inclined section 201 can be sufficiently small. On the other hand, the transmittance difference ΔT is preferably 30% or less, and more preferably 25% or less. If the transmittance difference ΔT exceeds 25%, the effect of reducing the inclination angle θ of the first inclined section 201 may be difficult to obtain. In contrast, by setting the transmittance difference ΔT to 25% or less, the inclination angle θ of the first inclined section 201 can be sufficiently small.

[0036] It is preferable that the width D [μm] of the first transmitting portion 20 and the difference ΔT [%] between the transmittance T1 [%] and the transmittance T2 [%] satisfy the relationship of D≧−3.14×ΔT / 100+2.32, for example. This allows the inclination angle θ of the first inclined portion 201 to be smaller (for example, 30 degrees or less). The above relational expression will be described in detail in the examples below.

[0037] The transmittance T1 of the first transmitting portion 20 is preferably 20% or more, more preferably 30% or more, and even more preferably greater than 30%. On the other hand, the transmittance T1 is preferably 60% or less, and more preferably 50% or less. The transmittance T2 of the second transmitting portion 30 is preferably 10% or more, more preferably 15% or more, and even more preferably 20% or more. On the other hand, the transmittance T2 is preferably 40% or less, and more preferably 30% or less. The transmittance T3 of the slit pattern 43 is preferably 10% or more, more preferably 15% or more, and further preferably 20% or more. On the other hand, the transmittance T3 of the slit pattern 43 is preferably equal to or less than the transmittance of the light-transmitting portion 10. Moreover, it is preferable that the transmittance T3 of the slit pattern 43 is equal to or greater than the transmittance T2 of the second transmitting portion 30.

[0038] The exposure light is light irradiated by a light source provided in an exposure device for manufacturing a display device. The exposure light in this embodiment includes light having a wavelength of, for example, 313 nm or more and 436 nm or less. As the exposure light, a single wavelength light (for example, an i-line having a wavelength of 365 nm) may be used, or a broad wavelength light including multiple wavelengths may be used. In addition, in this specification, the transmittance and phase difference are for the wavelength when the exposure light is composed of a single wavelength, and are for any wavelength (representative wavelength) included in the wavelength range of 313 nm or more and 436 nm or less when broad wavelength light is used.

[0039] The first transmission section 20 is preferably made of, for example, a first semi-transmitting film 101 provided on a light-transmitting substrate 100, and the second transmission section 30 is preferably made of, for example, a first semi-transmitting film 101 and a second semi-transmitting film 102 laminated in random order on the light-transmitting substrate 100. In particular, as shown in FIG. 2, it is more preferable that the second transmission section 30 is made of, for example, a second semi-transmitting film 102 formed on the light-transmitting substrate 100, and the first semi-transmitting film 101 formed on the second semi-transmitting film 102. With this configuration, the transmittance T1 of the first transmission section 20 is equal to the transmittance HT1 of the first semi-transmitting film 101. On the other hand, the transmittance T2 of the second transmission section 30 is the transmittance of the laminated structure of the first semi-transmitting film 101 and the second semi-transmitting film 102. The transmittance HT2 of the second semi-transmitting film 102 needs to be optically designed based on the transmittance T2 of the second transmitting portion 30 and the transmittance HT1 of the first semi-transmitting film 101.

[0040] The main pattern 41 and the sub-pattern 42 are preferably formed by, for example, laminating a first semi-transmitting film 101, a second semi-transmitting film 102, and a light-shielding film 103 having light-shielding properties in random order on a light-transmitting substrate 100. In particular, as shown in Fig. 2, it is more preferable that the light-shielding film 103 is formed on the light-transmitting substrate 100, the second semi-transmitting film 102 is formed on the light-shielding film 103, and the first semi-transmitting film 101 is formed on the second semi-transmitting film 102. This configuration makes it easy to manufacture the transfer mask 1 as shown in Fig. 2. The main pattern 41 and the sub-pattern 42 may be formed of a chromium-based material or a metal silicide-based material. Also, the slit pattern 43 is preferably formed by, for example, laminating a first semi-transmitting film 101 and a second semi-transmitting film 102 on the light-transmitting substrate 100 in no particular order. In particular, as shown in FIG. 2, the slit pattern 43 is more preferably formed by forming the second semi-transmitting film 102 on the light-transmitting substrate 100, and forming the first semi-transmitting film 101 on the second semi-transmitting film 102. With this configuration, the transmittance of the slit pattern 43 is the transmittance of the laminated structure of the first semi-transmitting film 101 and the second semi-transmitting film 102 (i.e., the same transmittance as the second transmission section 30). Note that the slit pattern 43 may be formed by only the first semi-transmitting film 101 or only the second semi-transmitting film 102, or may be formed by not forming any thin film on the light-transmitting substrate 100.

[0041] The thickness d1 of the first semi-transparent film 101 is preferably 5 nm or more, and more preferably 10 nm or more, and is preferably 80 nm or less, and more preferably 60 nm or less. The thickness d2 of the second semi-transparent film 102 is preferably 3 nm or more, and more preferably 5 nm or more, and is preferably 50 nm or less, and more preferably 40 nm or less. The thickness d3 of the light-shielding film 103 is preferably 50 nm or more, more preferably 80 nm or more, and even more preferably 100 nm or more. The thickness d3 is preferably 200 nm or less, more preferably 170 nm or less, and even more preferably 150 nm or less.

[0042] The first semi-transmitting film 101, the second semi-transmitting film 102, and the light-shielding film 103 may be formed of chromium (Cr) or a material containing chromium (Cr) and at least one of oxygen (O), nitrogen (N), and carbon (C) (chromium-based material). Examples of the chromium-based material include Cr, CrO, CrN, CrF, CrCO, CrCN, CrON, CrCON, and CrCONF. On the other hand, the first semi-transmitting film 101, the second semi-transmitting film 102, and the light-shielding film 103 may be formed of a material made of metal and silicon, or a material containing at least one of oxygen (O), nitrogen (N), and carbon (C) in metal and silicon (metal silicide-based material). As the metal of the metal silicide, transition metals such as molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), and zirconium (Zr) are suitable. In the metal silicide material, the ratio of the metal content [atomic %] to the total content of metal and silicon (M+Si) [atomic %] (hereinafter referred to as the "M / [M+Si] ratio") is preferably 0.5 or less, more preferably 1 / 3 or less, and even more preferably 0.3 or less. On the other hand, the M / [M+Si] ratio is preferably 0.05 or more, and more preferably 0.1 or more.

[0043] The first semi-transparent film 101 and the second semi-transparent film 102 are preferably made of materials having etching selectivity to each other. This configuration makes it easy to manufacture the transfer mask 1 as shown in FIG. 2. For example, a thin film of a chromium-based material and a thin film of a metal silicide-based material have etching selectivity to each other. The above effect can be obtained by forming one of the first semi-transparent film 101 and the second semi-transparent film 102 from a chromium-based material and the other from a metal silicide-based material. The second semi-transmitting film 102 and the light-shielding film 103 are preferably made of materials having etching selectivity with respect to each other. This configuration makes it possible to easily manufacture the transfer mask 1 as shown in Fig. 2. For example, the above effect can be obtained by forming one of the second semi-transmitting film 102 and the light-shielding film 103 from a chromium-based material and the other from a metal silicide-based material. In other words, it is more preferable that second semi-transmitting film 102, first semi-transmitting film 101, and light-shielding film 103 are made of a material that has etching selectivity with respect to each other.

[0044] The light-transmitting substrate 100 is transparent to the exposure light. The light-transmitting substrate 100 has a transmittance of 85% or more, preferably 90% or more, to the exposure light when there is no surface reflection loss. The light-transmitting substrate 100 is made of a material containing silicon and oxygen, and can be made of glass materials such as synthetic quartz glass, quartz glass, aluminosilicate glass, soda-lime glass, and low-thermal expansion glass (SiO2-TiO2 glass, etc.). The light-transmitting substrate 100 of a transfer mask used for display device applications is generally a rectangular substrate, and the length of the short side of the light-transmitting substrate is 300 mm or more.

[0045] (2) Method for manufacturing transfer mask 1 Next, a method for manufacturing the transfer mask 1 of this embodiment will be described with reference to Figures 3(a) to 3(e). The transfer mask 1 of this embodiment can be manufactured, for example, by the method described below.

[0046] First, the light-shielding film 103 is formed on the light-transmitting substrate 100. As the film forming method, a known method (for example, film formation by a sputtering method) can be applied.

[0047] 3(a), the light-shielding film 103 is patterned to match the shape of the light-shielding portion 40. The patterning can be performed by a known method (for example, a resist film having a pattern of the light-shielding portion 40 is provided on the light-shielding film 103, and wet etching or dry etching is performed using the resist film as a mask to form the pattern of the light-shielding portion 40 on the light-shielding film 103).

[0048] 3(b), a second semi-transmitting film 102 is formed on the light-transmitting substrate 100 and the light-shielding film 103. A known method (for example, film formation by a sputtering method) can be used as the film formation method.

[0049] 3(c), the second semi-transmitting film 102 is patterned to match the shapes of the first transmissive portion 20 and the transparent portion 10. The patterning can be performed by a known method (for example, a resist film having a pattern of the first transmissive portion 20 and the transparent portion 10 is provided on the second semi-transmitting film 102, and the pattern of the first transmissive portion 20 and the transparent portion 10 is formed in the second semi-transmitting film 102 by wet etching or dry etching using the resist film as a mask).

[0050] After the second semi-transmitting film 102 is patterned, as shown in Fig. 3(d), the first semi-transmitting film 101 is formed on the light-transmitting substrate 100 and the second semi-transmitting film 102. The film formation method can be a known method (for example, film formation by a sputtering method).

[0051] 3(e), the first semi-transmitting film 101 is patterned to match the shape of the light-transmitting portion 10. The patterning can be performed by a known method (for example, a resist film having a pattern of the light-transmitting portion 10 is provided on the first semi-transmitting film 101, and the pattern of the light-transmitting portion 10 is formed on the first semi-transmitting film 101 by performing wet etching or dry etching using the resist film as a mask).

[0052] The transfer mask 1 of this embodiment can be manufactured by the above method. In the transfer mask 1 of this embodiment, the first semi-transmitting film 101, the second semi-transmitting film 102, and the light-shielding film 103 can be formed from materials that can be etched with the same etchant. Note that additional films other than those described above may be formed as long as the effect of the transfer mask 1 is not impaired.

[0053] (3) Manufacturing method of display device The present invention is also applicable as a manufacturing method for a display device such as an organic electroluminescence display device. The manufacturing method for the display device of this embodiment includes, for example, a step of preparing the transfer mask 1 of this embodiment, a step of forming a photosensitive resin film (for example, a thin film made of photosensitive polyimide) that is sensitive to exposure light on a substrate, a step of irradiating the photosensitive resin film with exposure light transmitted through the transfer mask 1 using an exposure device to expose and transfer a transfer pattern, and a step of performing a development process on the exposed and transferred photosensitive resin film.

[0054] In the manufacturing method of the display device of this embodiment, in the step of exposing and transferring the transfer pattern, it is preferable to expose and transfer the transfer pattern so that a first inclined portion 201 having a cross-sectional inclination angle θ of 30 degrees or less (more preferably 20 degrees or less) is formed around the opening 200 of the photosensitive resin film after the development process, and a second inclined portion 204 having a cross-sectional inclination angle φ of 30 degrees or less (more preferably 20 degrees or less) is formed around the columnar portion 202. As described above, the transfer mask 1 has a configuration for reducing the inclination angle θ and the inclination angle φ, so that the inclination angle θ and the inclination angle φ can be set to 30 degrees or less (or 20 degrees or less) by appropriately selecting the exposure device and exposure conditions. This can further improve the yield when manufacturing the display device.

[0055] The transfer mask 1 of this embodiment uses a configuration in which a first transparent section 20 having a higher transmittance than the second transparent section 30 is arranged in an annular shape between the light-transmitting section 10 and the second transparent section 30, and uses fine slit structures of the sub-pattern 42 and slit pattern 43 as a configuration for reducing the inclination angle θ. In order to reduce the inclination angle θ, when a fine slit structure is used on the outer periphery of the light-transmitting portion 10, the width of the sub-pattern and the slit pattern must be significantly smaller than the width D1 of the sub-pattern 42 and the width D2 of the slit pattern 43. In addition, the thickness of the thin film forming the second transmitting portion 30 (the total thickness of the first semi-transmitting film 101 and the second semi-transmitting film 102) is thinner than the light-shielding film 103, and it is difficult to control the patterning by wet etching. Due to these circumstances, it is difficult to form such a small line width with high accuracy by wet etching. For this reason, it is better to provide the first transmitting portion 20 as described above (for example, provide a thin film with high transmittance such as the first semi-transmitting film 101) to reduce the inclination angle θ.

[0056] On the other hand, when a third transmitting portion having a transmittance between the second transmitting portion 30 and the light-shielding portion 40 is provided between the second transmitting portion 30 and the light-shielding portion 40 as a configuration for reducing the inclination angle φ, it is necessary to provide a third semi-transmitting film between the thin film (second semi-transmitting film 102) forming the second transmitting portion 30 and the light-shielding film 103 forming the light-shielding portion 40 in order to form the third transmitting portion. In this case, the laminated structure of the thin films on the light-transmitting substrate 100 becomes more complicated (lamination structure of four thin films), making it difficult to manufacture the transfer mask with high accuracy. On the other hand, the width D1 of the sub-pattern 42 and the width D2 of the slit pattern 43 provided as a configuration for reducing the inclination angle φ can be relatively large, and can be formed with high accuracy in the light-shielding film 103 even by wet etching. For this reason, it is better to use a fine slit structure of the sub-pattern 42 and the slit pattern 43 as a configuration for reducing the inclination angle φ. As described above, the transfer mask 1 of this embodiment can control the PDL tilt angle θ and tilt angle φ with high precision by using configurations suitable for reducing the tilt angle θ and configurations suitable for reducing the tilt angle φ, respectively.

[0057] (4) Modification of the First Embodiment The above-described embodiment can be modified as necessary as in the following modified examples. Hereinafter, only elements different from the above-described embodiment will be described, and elements substantially the same as those described in the above-described embodiment will be denoted by the same reference numerals and their description will be omitted.

[0058] (4-1) Modification 1 of the First Embodiment 4 is a schematic cross-sectional view of transfer mask 2 of Modification 1. As in the above-described first embodiment, transfer mask 2 of Modification 1 also has a transfer pattern on light-transmitting substrate 100, and has light-transmitting portions 10, first transmitting portions 20, second transmitting portions 30, and light-shielding portions 40. Therefore, transfer mask 2 of Modification 1 can also reduce inclination angle θ of first inclined portion 201 and inclination angle φ of second inclined portion 204 when forming a PDL.

[0059] 4, the light-shielding section 40 of the present modified example 1 has a configuration in which, for example, a first semi-transmitting film 101 is formed on a light-transmitting substrate 100, a second semi-transmitting film 102 is formed on the first semi-transmitting film 101, and a light-shielding film 103 is formed on the second semi-transmitting film 102. In addition, the second transmissive section 30 of the present modified example 1 has a configuration in which, for example, the first semi-transmitting film 101 is formed on the light-transmitting substrate 100, and the second semi-transmitting film 102 is formed on the first semi-transmitting film 101.

[0060] The transfer mask 2 of the first modified example can be manufactured, for example, by the following method. First, a mask blank is prepared by depositing a first semi-transmitting film 101, a second semi-transmitting film 102, and a light-shielding film 103 in this order on a light-transmitting substrate 100. After the deposition, as shown in FIG. 5(a), the light-shielding film 103 is patterned according to the shape of the light-shielding portion 40 (for example, a resist film having the pattern of the light-shielding portion 40 is provided on the light-shielding film 103, and the resist film is used as a mask to perform wet etching or dry etching using an etchant having sufficient etching selectivity with respect to the second semi-transmitting film 102, thereby forming the pattern of the light-shielding portion 40). 5(b), the second semi-transmitting film 102 is patterned in accordance with the shapes of the first transmitting portion 20 and the light transmitting portion 10 (for example, a resist film having a pattern of the first transmitting portion 20 and the light transmitting portion 10 is provided on the light-shielding film 103 and the second semi-transmitting film 102, and the resist film is used as a mask to perform wet etching or dry etching using an etchant having sufficient etching selectivity with respect to the first semi-transmitting film 101, thereby forming a pattern of the first transmitting portion 20 and the light transmitting portion 10 in the second semi-transmitting film 102). Thereafter, the first semi-transmitting film 101 is patterned in accordance with the shape of the light transmitting portion 10 (for example, a resist film having a pattern of the light transmitting portion 10 is provided on the light-shielding film 103, the second semi-transmitting film 102, and the first semi-transmitting film 101, and the resist film is used as a mask to perform wet etching or dry etching to form a pattern of the light transmitting portion 10 in the first semi-transmitting film 101). This allows the transfer mask 2 shown in FIG. 4 to be manufactured.

[0061] (4-2) Modification 2 of the First Embodiment 6 is a schematic cross-sectional view of transfer mask 3 of Modification 2. As in the above-described first embodiment, transfer mask 3 of Modification 2 also has a transfer pattern on light-transmitting substrate 100, and has light-transmitting portions 10, first transmitting portions 20, second transmitting portions 30, and light-shielding portions 40. Therefore, transfer mask 3 of Modification 2 can also reduce inclination angle θ of first inclined portion 201 and inclination angle φ of second inclined portion 204 when forming a PDL.

[0062] As shown in FIG. 6, the light-shielding portion 40 of the present modification 2 has a configuration in which, for example, a second semi-transmitting film 102 is formed on a light-transmitting substrate 100, an etching stopper film 104 is formed on the second semi-transmitting film 102, a light-shielding film 103 is formed on the etching stopper film 104, and a first semi-transmitting film 101 is formed on the light-shielding film 103. The etching stopper film 104 is made of a material having etching selectivity with the light-shielding film 103 and the second semi-transmitting film 102. The optical characteristics of the etching stopper film 104 are basically not important. It is only necessary that the laminated structure of the second semi-transmitting film 102, the etching stopper film 104, the light-shielding film 103, and the first semi-transmitting film 101 can satisfy the optical characteristics required for the light-shielding portion 40. Note that, in the transfer mask 3 of the present modification 2, the first semi-transmitting film 101, the second semi-transmitting film 102, and the light-shielding film 103 can be formed of a material that is etched with the same etchant.

[0063] The transfer mask 3 of the present modified example 2 can be manufactured, for example, by the following method. First, a mask blank is prepared by depositing the second semi-transmitting film 102, the etching stopper film 104, and the light-shielding film 103 in this order on the light-transmitting substrate 100. After the deposition, as shown in FIG. 7(a), the light-shielding film 103 and the etching stopper film 104 are patterned according to the shape of the light-shielding portion 40 (for example, a resist film having the pattern of the light-shielding portion 40 is provided on the light-shielding film 103, and the resist film is used as a mask to perform wet etching or dry etching using different etchants to form the pattern of the light-shielding portion 40 in each of the light-shielding film 103 and the etching stopper film 104). Next, as shown in FIG. 7(b), the second semi-transparent film 102 is patterned to match the shapes of the first transmissive section 20 and the transparent section 10 (for example, a resist film having the pattern of the first transmissive section 20 and the transparent section 10 is provided on the light-shielding film 103 and the second semi-transparent film 102, and wet etching or dry etching is performed using the resist film as a mask to form the pattern of the first transmissive section 20 and the transparent section 10 in the second semi-transparent film 102). Thereafter, a first semi-transparent film 101 is formed on the light-transmitting substrate 100, the second semi-transparent film 102, and the light-shielding film 103, and the first semi-transparent film 101 is patterned to match the shape of the light-transmitting section 10 (for example, a resist film having the pattern of the light-transmitting section 10 is provided on the first semi-transparent film 101, and wet etching or dry etching is performed using the resist film as a mask to form the pattern of the light-transmitting section 10 in the first semi-transparent film 101). This allows the production of a transfer mask 3 as shown in FIG. 6.

[0064] <Other embodiments of the present invention> Although the embodiment of the present invention has been specifically described above, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the gist of the present invention.

[0065] 8(a) and 8(b) are plan views showing a schematic diagram of a light-shielding portion 40 according to another embodiment of the present invention. For example, in the above embodiment, the sub-pattern 42 is provided in a ring shape so as to surround the main pattern 41. However, the sub-pattern 42 may be partially disconnected as shown in FIG. 8(a), or may be partially connected to the main pattern 41 as shown in FIG. 8(b). Even in such a case, it is possible to reduce the inclination angle φ of the second inclined portion 204 located around the columnar portion 202 of the PDL. EXAMPLES

[0066] Next, examples of the present invention will be described. These examples are merely examples of the present invention, and the present invention is not limited to these examples.

[0067] (1) Example 1 Under the following conditions, the inclination angle θ of the first inclined portion 201 when a PDL was formed by exposure transfer onto a photosensitive polyimide film on a substrate using the transfer mask 1 was calculated by simulation. The result is shown in FIG. Transmittance T1 of the first transmitting portion 20: 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65% Transmittance T2 of the second transmitting portion 30: 30% Difference ΔT between transmittance T1 and transmittance T2: 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35% Width D of the first transmitting portion 20: 0 to 5.0 μm Exposure device numerical aperture (NA): 0.11 Exposure light: i-line

[0068] 9, it was confirmed that the inclination angle θ is smaller when the first transmitting portion 20 is provided (difference ΔT is 5%, 10%, 15%, 20%) than when the first transmitting portion 20 is not substantially provided (difference ΔT is 0%). In particular, it was confirmed that when the difference ΔT is 10% or more and the width D is 1.5 μm or more, the inclination angle θ can be reduced by 5 degrees or more compared to when the first transmitting portion 20 is not substantially provided.

[0069] (2) Example 2 Further, under the following conditions, the inclination angle θ of the first inclined portion 201 when the PDL was formed using the transfer mask 1 was calculated by simulation. The result is shown in FIG. Transmittance T1 of the first transmitting portion 20: 30%, 35%, 40%, 45%, 50% Transmittance T2 of the second transmitting portion 30: 30% Difference ΔT between transmittance T1 and transmittance T2: 0%, 5%, 10%, 15%, 20% Width D of the first transmitting portion 20: 0 to 5.0 μm Numerical aperture of exposure device (NA): 0.1 Exposure light: Composite light including g-line, h-line, and i-line

[0070] 10, it was confirmed that the inclination angle θ is smaller when the first transmitting portion 20 is provided (difference ΔT is 5%, 10%, 15%, 20%) than when the first transmitting portion 20 is not substantially provided (difference ΔT is 0%). In particular, it was confirmed that when the difference ΔT is 10% or more and the width D is 1.5 μm or more, the inclination angle θ can be reduced by 5 degrees or more compared to when the first transmitting portion 20 is not substantially provided.

[0071] (3) Example 3 Using a transfer mask 1 provided with the following light-shielding portion 40, the inclination angle φ of the second inclined portion 204 was calculated by simulation when a PDL was formed under the same exposure conditions as in Example 2. As a result, the inclination angle φ was 17.2 degrees. Line width D1 of sub-pattern 42: 0.9 μm Line width D2 of slit pattern 43: 0.9 μm Transmittance of slit pattern 43: 30% Numerical aperture of exposure device (NA): 0.1 Exposure light: Composite light including g-line, h-line, and i-line

[0072] Similarly, the inclination angle φ of the second inclined portion 204 was calculated by a simulation under the following conditions. As a result, the inclination angle φ was 19.3 degrees. Line width D1 of sub-pattern 42: 0.6 μm Line width D2 of slit pattern 43: 0.8 μm Transmittance of slit pattern 43: 30% Numerical aperture of exposure device (NA): 0.1 Exposure light: Composite light including g-line, h-line, and i-line

[0073] Meanwhile, for comparison, a transfer mask having a light-shielding portion (having only the main pattern 41) without the sub-pattern 42 and the slit pattern 43 was used to calculate the inclination angle φ of the second inclined portion 204 by simulation when a PDL was formed under the same exposure conditions as in Example 2. As a result, the inclination angle φ was 28.8 degrees.

[0074] From the above, it was confirmed that by providing light-shielding portion 40 including main pattern 41, sub-pattern 42, and slit pattern 43, the inclination angle φ of second inclined portion 204 can be made small.

[0075] (4) Summary of Examples 1 and 2 From the results of Examples 1 and 2, the conditions under which the inclination angle θ could be set to 30 degrees or less, the conditions under which the inclination angle θ could be set to 25 degrees or less, and the conditions under which the inclination angle θ could be set to 20 degrees or less were picked out and summarized in Fig. 11. The dashed lines in Fig. 11 are linear approximations of the three points under which the width D was smallest when the difference ΔT was 10%, 15%, and 20%, respectively, among the picked out conditions.

[0076] 11, when the difference ΔT is 10%, 15%, and 20%, the three points under the condition of the smallest width D are approximated by a straight line, and the formula is D=-3.14×ΔT / 100+2.32. Therefore, it was confirmed that the inclination angle θ of the first inclined portion 201 can be made smaller (for example, to 30 degrees or less) by making the width D of the first transmitting portion 20 and the difference ΔT between the transmittance T1 and the transmittance T2 satisfy the relationship D≧-3.14×ΔT / 100+2.32. [Explanation of symbols]

[0077] 1, 2, 3 Transfer mask 10 Translucent part 20 1st transparent part 30 2nd transparent part 40 Light shielding section 41 Main Pattern 42 Secondary Pattern 43 Slit Pattern 100 Transparent substrate 101 1st semi-permeable membrane 102 Second semi-permeable membrane 103 Light-shielding film 104 Etching stopper film 200 Opening 201 1st slope section 202 Columnar part 203 Flat area 204 2nd slope part

Claims

1. A transfer mask having a transfer pattern including a light-transmitting portion, a first transmitting portion, a second transmitting portion, and a light-shielding portion on a light-transmitting substrate, the light-transmitting portion has a hole shape through which the light-transmitting substrate is exposed, the first transmission portion is provided in an annular shape along an outer periphery of the light transmitting portion, the second transmission portion is provided in contact with an outer periphery of the first transmission portion, a transmittance T1 of the first transmitting portion for the exposure light is higher than a transmittance T2 of the second transmitting portion for the exposure light; the light-shielding portion is provided adjacent to the second transmitting portion, The light-shielding portion includes a main pattern, a sub-pattern that is provided on at least a part of the periphery of the main pattern and has an unresolved line width, and a slit pattern that is provided between the main pattern and the sub-pattern and has an unresolved line width. A transfer mask characterized by:

2. 2. The transfer mask according to claim 1, wherein the difference ΔT between the transmittance T1 and the transmittance T2 is 10% or more.

3. 2. The transfer mask according to claim 1, wherein the transmittance T1 is 20% or more.

4. 2. The transfer mask according to claim 1, wherein the transmittance T2 is 10% or more.

5. 2. The transfer mask according to claim 1, wherein the main pattern and the sub-pattern have an optical density with respect to the exposure light that is greater than 2.

0.

6. an absolute value of a phase difference between the exposure light transmitted through the first transmission portion and the exposure light transmitted through the light-transmitting portion is 90 degrees or less; an absolute value of a phase difference between the exposure light transmitted through the second transmitting portion and the exposure light transmitted through the light-transmitting portion is 90 degrees or less; 2. The transfer mask according to claim 1, wherein an absolute value of a phase difference between the exposure light transmitted through the first transmitting portion and the exposure light transmitted through the second transmitting portion is 90 degrees or less.

7. 2. The transfer mask according to claim 1, wherein the exposure light includes light having a wavelength of 313 nm or more and 436 nm or less.

8. the first transmission portion is made of a first semi-transmission film provided on the light-transmitting substrate, the second transmission portion is formed by laminating the first semi-transmission film and the second semi-transmission film in no particular order on the light-transmitting substrate, 2. The transfer mask according to claim 1, wherein the main pattern and the sub-pattern are formed by laminating the first semi-transmitting film, the second semi-transmitting film, and a light-shielding film in any order on the light-transmitting substrate.

9. 9. The transfer mask according to claim 8, wherein the second semi-transmitting film is made of a material having etching selectivity with respect to the first semi-transmitting film and the light-shielding film.

10. A step of preparing a transfer mask according to any one of claims 1 to 9; forming a photosensitive resin film on a substrate that is sensitive to the exposure light; a step of irradiating the photosensitive resin film with the exposure light transmitted through the transfer mask using an exposure device to expose and transfer the transfer pattern; a step of performing a development process on the exposed and transferred photosensitive resin film; A method for manufacturing a display device, comprising:

11. After the development process, openings and columnar portions are formed in the photosensitive resin film, 11. The display device manufacturing method of claim 10, wherein in the exposure transfer process, the transfer pattern is exposed and transferred so that an inclined portion having a cross-sectional inclination angle of 30 degrees or less is formed around the opening, and an inclined portion having a cross-sectional inclination angle of 30 degrees or less is formed around the columnar portion.

12. A method for manufacturing a display device, comprising: preparing a transfer mask; forming a photosensitive resin film on a substrate that is sensitive to exposure light; a step of irradiating the photosensitive resin film with the exposure light transmitted through the transfer mask using an exposure device to expose and transfer a transfer pattern; a step of performing a development process on the exposed and transferred photosensitive resin film; and an opening and a columnar portion are formed in the photosensitive resin film after the development treatment, an inclined portion having a cross-sectional inclination angle of 30 degrees or less is formed around the opening, and an inclined portion having a cross-sectional inclination angle of 30 degrees or less is formed around the columnar portion, The transfer mask has a transfer pattern including a light-transmitting portion, a first transmitting portion, a second transmitting portion, and a light-shielding portion on a light-transmitting substrate.

10. A method for manufacturing a display device comprising the steps of:

13. The light-transmitting portion has a hole shape in which the light-transmitting substrate is exposed, the first transmission portion is provided in an annular shape along an outer periphery of the light transmitting portion, the second transmission portion is provided in contact with an outer periphery of the first transmission portion, a transmittance T1 of the first transmitting portion for the exposure light is higher than a transmittance T2 of the second transmitting portion for the exposure light; The light-shielding portion includes a main pattern, a sub-pattern that is provided on at least a part of the periphery of the main pattern and has an unresolved line width, and a slit pattern that is provided between the main pattern and the sub-pattern and has an unresolved line width.

13. The method for manufacturing a display device according to claim 12.

Images