Semiconductor package, semiconductor module, and method for manufacturing semiconductor package

Abstract

To provide a semiconductor package, a semiconductor module, and a method for manufacturing a semiconductor package which can be downsized.SOLUTION: The semiconductor package includes: an interposer substrate 100 with a first surface 100a; a semiconductor chip 200 with a second surface 200a facing the first surface 100a and with a third surface 200b in front / back relation with the second surface 200a, the semiconductor chip being equipped to the interposer substrate 100 with the first surface 100a and the second surface 200a in between; and a solder ball 300 equipped to the first surface 100a of the interposer substrate 100. The solder ball 300 has a flat surface 310 on the opposite side to the side where the interposer substrate 100 is formed, and a first height from the first surface 100a to the flat surface 310 is equal to a second height from the first surface 100a to the third surface 200b or is higher than the second height.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor package, a semiconductor module, and a method for manufacturing a semiconductor package. [Background technology]

[0002] Patent Document 1 discloses a semiconductor package configuration in which a semiconductor chip is mounted on one surface (upper side) of a circuit board and solder balls are mounted on the other surface (lower side) of the circuit board. The circuit board is electrically connected to another mounting board via the solder balls. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2001-015630 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, according to the configuration of Patent Document 1, the semiconductor chip and the solder balls are arranged on different surfaces, which increases the height dimension of the semiconductor package, resulting in a problem of increased size. [Means for solving the problem]

[0005] The semiconductor package has an interposer substrate having a first surface, a second surface facing the first surface, and a third surface that is in a reverse relationship to the second surface, and comprises a semiconductor chip mounted on the interposer substrate via the first surface and the second surface, and a solder ball mounted on the first surface of the interposer substrate, the solder ball having a flat surface on the side opposite the interposer substrate, and a first height from the first surface to the flat surface being the same as or higher than a second height from the first surface to the third surface.

[0006] A semiconductor module includes the semiconductor package described above and a mounting board on which the semiconductor package is mounted.

[0007] A method for manufacturing a semiconductor package includes an interposer substrate having a first surface, solder balls arranged on the first surface, and a semiconductor chip arranged on the first surface, and includes the steps of: arranging spherical solder balls, the solder balls being taller than the height of the semiconductor chip, on the first surface of the interposer substrate; arranging the semiconductor chip on the first surface of the interposer substrate; and simultaneously pressing the solder balls and the semiconductor chip using a tool until the semiconductor chip is mounted on the interposer substrate, thereby forming a flat surface on the tool side of the solder balls. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view showing a configuration of a semiconductor module. [Diagram 2] FIG. 2 is a cross-sectional view showing a specific configuration of a semiconductor module. [Diagram 3] FIG. 1 is a cross-sectional view showing a configuration of a semiconductor package. [Figure 4] FIG. 1 is a cross-sectional view showing a configuration of a semiconductor package. [Diagram 5] 1A to 1C are cross-sectional views showing a manufacturing method of a semiconductor package. [Figure 6] 1A to 1C are cross-sectional views showing a manufacturing method of a semiconductor package. [Figure 7] 1A to 1C are cross-sectional views showing a manufacturing method of a semiconductor package. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] First, the configuration of a semiconductor module 1000 will be described with reference to FIG.

[0010] As shown in FIG. 1, the semiconductor module 1000 includes an interposer substrate 100, a semiconductor chip 200, solder balls 300, and a mounting substrate 400. The semiconductor module 1000 includes an interposer substrate 100, a semiconductor chip 200, solder balls 300, and a mounting substrate 400.

[0011] The interposer substrate 100 has a first surface 100a. The semiconductor chip 200 has a second surface 200a disposed opposite the first surface 100a, and a third surface 200b opposite the second surface 200a. That is, the semiconductor chip 200 is mounted on the interposer substrate 100 via the first surface 100a and the second surface 200a.

[0012] Although not shown, a plurality of solder balls 300 are arranged around the semiconductor chip 200 in a plan view. The solder balls 300 are mounted on the first surface 100a. The solder balls 300 are also mounted on the mounting substrate 400. That is, the interposer substrate 100 and the mounting substrate 400 are electrically connected via the solder balls 300. The solder balls 300 have a flat surface 310 on the side opposite to the interposer substrate 100, that is, on the side of the mounting substrate 400.

[0013] Next, a specific configuration of the semiconductor module 1000 will be described with reference to FIG.

[0014] 2, the interposer substrate 100 is, for example, a multilayer wiring structure in which each layer includes fine wiring, formed on a silicon wafer using a semiconductor circuit manufacturing technology. Note that the interposer substrate 100 is not limited to silicon, and may be, for example, SiC (silicon carbide), GaN (gallium nitride), organic materials such as polyimide and glass epoxy, or flexible substrates such as polyimide tape.

[0015] The semiconductor chip 200 includes an integrated circuit. Semiconductor terminals 211a and 211b are arranged on a second surface 200a of the semiconductor chip 200. The semiconductor chip 200 is mounted on the interposer substrate 100 and electrically connected thereto via the semiconductor terminals 211a and 211b.

[0016] An underfill 510 is disposed between the semiconductor chip 200 and the interposer substrate 100. In addition, an underfill 520 is applied from the outer edge 210 of the semiconductor chip 200 to the first surface 100a of the interposer substrate 100.

[0017] The underfill 510 is, for example, an epoxy resin. That is, the gap between the semiconductor chip 200 and the interposer substrate 100 is filled with the underfill 510. This ensures the mechanical strength of the semiconductor chip 200, ensures the insulation of each member, and improves moisture resistance.

[0018] The solder balls 300 are, for example, solder with low electrical resistance, used for joining metals, etc., and are an alloy mainly composed of tin. Note that the solder balls 300 are not limited to tin, and may be made of, for example, Au (gold), etc.

[0019] An overcoat 530 is disposed between the solder balls 300 and the interposer substrate 100, specifically, on the outer periphery of the solder balls 300 on the interposer substrate 100 side. The overcoat 530 is, for example, an insulating material, and has the function of fixing the positions of the solder balls 300 in place, while ensuring insulation between the solder balls 300 and the semiconductor chip 200.

[0020] The configuration including the interposer substrate 100, the semiconductor chip 200, and the solder balls 300 is referred to as a semiconductor package 900. The semiconductor module 1000 includes a mounting substrate 400 in the semiconductor package 900.

[0021] The mounting board 400 has wiring patterns 410, 440a, and 440b formed on, for example, one surface, the front surface. Also, for example, wiring patterns 420, 450a, and 450b formed on, for example, the other surface, the back surface. The wiring patterns 410 and 420 are electrically connected via, for example, a connection electrode 430. The wiring patterns 440a and 450a are electrically connected via, for example, a connection electrode 460a. The wiring patterns 440b and 450b are electrically connected via, for example, a connection electrode 460b.

[0022] The wiring patterns 410, 420, 440a, 440b, 450a, and 450b are made of, for example, copper (Cu), but are not limited to Cu, and may be made of, for example, palladium nickel (Pb / Ni) alloy plating, tin plating (Sn), solder plating, or the like.

[0023] The semiconductor package 900 and the mounting substrate 400 are connected via solder pastes 321, 322, and 323. A thermally conductive film 220 is disposed on the surface of the semiconductor chip 200 facing the mounting substrate 400, i.e., the third surface 200b. The thermally conductive film 220 is, for example, a copper (Cu) foil or metallization (metal thin film).

[0024] In this way, since the semiconductor chip 200 and the mounting substrate 400 are connected via the solder paste 321, even if heat is generated in the semiconductor chip 200, the heat can be conducted in the order of the thermally conductive film 220, the solder paste 321, and the wiring pattern 410, and the heat can be dissipated to the mounting substrate 400.

[0025] Furthermore, the solder balls 300a, 300b and the mounting substrate 400 are connected via the solder pastes 322, 323, so that electrical signals can be transmitted and received between the interposer substrate 100 and the mounting substrate 400.

[0026] Next, the configuration of the semiconductor packages 900A and 900B will be described with reference to FIGS.

[0027] 3, the semiconductor package 900A includes an interposer substrate 100, a semiconductor chip 200, and solder balls 300. As described above, the solder balls 300 have a flat surface 310 on the side opposite to the interposer substrate 100 side.

[0028] In the semiconductor package 900A of this embodiment, the height of the solder ball 300, i.e., the first height from the first surface 100a to the flat surface 310, is defined as H1, and the height of the semiconductor chip 200, i.e., the second height from the first surface 100a to the third surface 200b, is defined as H2, where the first height H1 and the second height H2 are the same height, i.e., H1=H2.

[0029] In this way, since the first height H1 and the second height H2 are the same height, when the semiconductor package 900A is mounted on another mounting substrate 400, the solder balls 300 and the mounting substrate 400 can be electrically connected. Furthermore, the third surface 200b of the semiconductor chip 200 can be brought into contact with the mounting substrate 400. Therefore, heat generated in the semiconductor chip 200 can be dissipated to the mounting substrate 400.

[0030] Furthermore, since the semiconductor chip 200 and the solder balls 300 are arranged on the same surface, the first surface 100a, of the interposer substrate 100, it is possible to reduce the height dimension of the semiconductor package 900, thereby enabling miniaturization.

[0031] 4, the semiconductor package 900B includes an interposer substrate 100, a semiconductor chip 200, and solder balls 300. As described above, the solder balls 300 have a flat surface 310 on the side opposite to the interposer substrate 100 side.

[0032] In the semiconductor package 900B of this embodiment, the height of the solder ball 300, i.e., the first height from the first surface 100a to the flat surface 310, is defined as H1, and the height of the semiconductor chip 200, i.e., the second height from the first surface 100a to the third surface 200b, is defined as H3. The first height H1 is higher than the second height H3, i.e., H1>H3.

[0033] In this way, since the first height H1 is higher than the second height H2, it is possible to reliably electrically connect the solder balls 300 and the mounting substrate 400. In addition, by arranging a material with good thermal conductivity, such as the thermally conductive film 220 as described above, in the gap H4 between the semiconductor chip 200 and the mounting substrate 400, it is possible to dissipate heat from the semiconductor chip 200 to the mounting substrate 400.

[0034] Next, a method for manufacturing the semiconductor package 900 will be described with reference to Figures 5 to 7. Note that Figures 5 to 7 are simplified.

[0035] 5, first, a plurality of semiconductor chips 200 and a plurality of solder balls 300 are arranged at predetermined positions on the first surface 100a of the large interposer substrate 100A. The solder balls 300 are substantially spherical in shape. Therefore, the first height H11 of the solder balls 300 is higher than the height H12 of the semiconductor chip 200.

[0036] Furthermore, by using a large interposer substrate 100A, many semiconductor packages 900 can be manufactured at the same time.

[0037] 6, a plurality of semiconductor chips 200 and a plurality of solder balls 300 are simultaneously pressed against the large interposer substrate 100A using a tool 600. At this time, the semiconductor chips 200 are pressed until they are electrically connected to and mounted on the large interposer substrate 100A.

[0038] As a result, the height H13 of the semiconductor chip 200 becomes the same as that of the solder ball 300. Furthermore, in the spherical solder ball 300, a flat surface 310 is formed on the tool 600 side.

[0039] 7, the large interposer substrate 100A is diced into individual pieces to simultaneously complete a plurality of semiconductor packages 900. Specifically, for example, the large interposer substrate 100A is cut into pieces of the size of the semiconductor packages 900 using a dicing blade 700. Note that the method of dicing is not limited to the dicing blade 700, and cutting may be performed using laser light.

[0040] After that, the semiconductor package 900 and a separately prepared mounting board 400 may be mounted using solder pastes 321, 322, and 323 to form the semiconductor module 1000.

[0041] In this way, the process of mounting the semiconductor chip 200 on the interposer substrate 100 and the process of forming flat surfaces on the solder balls 300 are performed in the same process by pressing, so the number of manufacturing steps can be reduced. Also, since multiple semiconductor packages 900 can be formed simultaneously from a large interposer substrate 100A, mass productivity can be improved.

[0042] As described above, the semiconductor package 900 of this embodiment has an interposer substrate 100 having a first surface 100a, a second surface 200a facing the first surface 100a, and a third surface 200b that is in a reverse relationship to the second surface 200a, and is provided with a semiconductor chip 200 mounted on the interposer substrate 100 via the first surface 100a and the second surface 200a, and a solder ball 300 mounted on the first surface 100a of the interposer substrate 100, the solder ball 300 having a flat surface 310 on the side opposite the interposer substrate 100, and a first height H1 from the first surface 100a to the flat surface 310 is the same as or higher than a second height H2 from the first surface 100a to the third surface 200b.

[0043] According to this configuration, the semiconductor chip 200 and the solder balls 300 are arranged on the same surface, the first surface 100a, of the interposer substrate 100, so that it is possible to reduce the height dimension of the semiconductor package 900, thereby enabling miniaturization.

[0044] Furthermore, by providing the flat surface 310 on the solder ball 300, it is possible to increase the contact area between the solder ball 300 and the mounting substrate 400, thereby reducing mounting defects. Furthermore, by aligning the rear surface of the semiconductor chip 200, i.e., the third surface 200b, and the flat surface 310 of the solder ball 300, height control becomes possible.

[0045] In addition, in the semiconductor package 900 of this embodiment, it is preferable that the first height H1 is the same as the second height H2. With this configuration, the first height H1 and the second height H2 are the same, that is, when the semiconductor package 900 is mounted on another mounting substrate 400, the solder balls 300 and the mounting substrate 400 can be electrically connected, and the third surface 200b of the semiconductor chip 200 can be brought into contact with the mounting substrate 400. Therefore, heat generated in the semiconductor chip 200 can be dissipated to the mounting substrate 400.

[0046] Moreover, in the semiconductor package 900 of this embodiment, the first height H1 is preferably higher than the second height H2. With this configuration, the height of the solder balls 300 is higher than the height of the semiconductor chip 200, so that the solder balls 300 and the mounting substrate 400 can be reliably electrically connected to each other. In addition, by disposing a material with good thermal conductivity, i.e., the thermally conductive film 220, between the semiconductor chip 200 and the mounting substrate 400, the heat of the semiconductor chip 200 can be dissipated to the mounting substrate 400.

[0047] Moreover, the semiconductor module 1000 of this embodiment includes the semiconductor package 900 described above, and a mounting substrate 400 on which the semiconductor package 900 is mounted. With this configuration, the semiconductor chip 200 and the solder balls 300 are arranged on the first surface 100a, which is the same surface, of the interposer substrate 100, so that it is possible to reduce the dimension of the semiconductor package 900 in the height direction, and to miniaturize the semiconductor module 1000. In addition, by mounting the semiconductor package 900 on the mounting substrate 400, heat generated by the semiconductor chip 200 can be dissipated to the mounting substrate 400.

[0048] Furthermore, the manufacturing method of the semiconductor package 900 of this embodiment is a manufacturing method of a semiconductor package 900 having an interposer substrate 100 having a first surface 100a, solder balls 300 arranged on the first surface 100a, and a semiconductor chip 200 arranged on the first surface 100a, and includes the steps of arranging spherical solder balls 300, which are taller than the semiconductor chip 200, on the first surface 100a of the interposer substrate 100, arranging the semiconductor chip 200 on the first surface 100a of the interposer substrate 100, and simultaneously pressing the solder balls 300 and the semiconductor chip 200 using a tool 600 until the semiconductor chip 200 is mounted on the interposer substrate 100, to form a flat surface 310 on the tool 600 side of the solder balls 300.

[0049] According to this method, the semiconductor chip 200 and the solder balls 300 are mounted on the first surface 100a, which is the same surface of the interposer substrate 100, so that it is possible to reduce the height dimension of the semiconductor package 900, thereby enabling miniaturization. Furthermore, the process of mounting the semiconductor chip 200 on the interposer substrate 100 and the process of forming flat surfaces on the solder balls 300 are performed in the same process by pressing, so that the number of manufacturing steps can be reduced.

[0050] Moreover, in the manufacturing method of the semiconductor package 900 of the present embodiment, the interposer substrate 100 is a large interposer substrate 100A, and preferably includes a step of forming the semiconductor package 900 by dividing the large interposer substrate 100A into individual pieces after forming the flat surface 310. According to this method, it is possible to simultaneously form a plurality of semiconductor packages 900 from the large interposer substrate 100A, thereby improving mass productivity.

[0051] Modifications of the above embodiment will now be described.

[0052] As described above, the thermal conduction film 220 may be arranged when the first height H1 and the second height H2 are the same height, or may be arranged when the second height H2 is smaller than the first height H1.

[0053] As described above, the method is not limited to forming the semiconductor packages 900 by dividing the large interposer substrate 100A into individual pieces, and the semiconductor packages 900 may be formed from the interposer substrates 100 that have been divided into individual pieces. [Explanation of symbols]

[0054] 100...interposer substrate, 100a...first surface, 100A...large interposer substrate, 200...semiconductor chip, 200a...second surface, 200b...third surface, 210...outer edge, 211a...semiconductor terminal, 211b...semiconductor terminal, 220...thermal conductive film, 300, 300a, 300b...solder ball, 310...flat surface, 321, 322, 323...solder paste, 400...mounting substrate, 410, 420, 440a, 440b, 450a, 450b...wiring pattern, 430, 460a, 460b...connection electrode, 510, 520...underfill, 530...overcoat, 600...tool, 700...dicing blade, 900...semiconductor package, 900A...semiconductor package, 900B...semiconductor package, 1000...semiconductor module.

Claims

1. an interposer substrate having a first surface; a semiconductor chip having a second surface facing the first surface and a third surface in a reverse relationship to the second surface, the semiconductor chip being mounted on the interposer substrate via the first surface and the second surface; Solder balls mounted on the first surface of the interposer substrate; Equipped with the solder ball has a flat surface on a side opposite to the interposer substrate; A semiconductor package, wherein a first height from the first surface to the flat surface is the same as or greater than a second height from the first surface to the third surface.

2. 2. The semiconductor package of claim 1, The first height is the same as the second height.

3. 2. The semiconductor package of claim 1, The first height is greater than the second height.

4. The semiconductor package according to claim 1 ; a mounting substrate on which the semiconductor package is mounted; A semiconductor module comprising:

5. an interposer substrate having a first surface; Solder balls disposed on the first surface; A semiconductor chip disposed on the first surface; A method for manufacturing a semiconductor package comprising: A step of arranging the solder balls, each of which has a spherical shape and is higher than a height of the semiconductor chip, on the first surface of the interposer substrate; disposing the semiconductor chip on the first surface of the interposer substrate; a step of simultaneously pressing the solder balls and the semiconductor chip with a tool until the semiconductor chip is mounted on the interposer substrate, thereby forming a flat surface on the tool side of the solder balls; A method for manufacturing a semiconductor package having the above structure.

6. 6. A method for manufacturing a semiconductor package according to claim 5, comprising the steps of: the interposer substrate is a large interposer substrate, A method for manufacturing a semiconductor package, comprising the step of forming the semiconductor package by singulating the large interposer substrate after forming the flat surface.

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