Substrate inspection device, substrate inspection method, and storage medium

Abstract

To improve defect detection accuracy in a defect inspection based on a photographed image of a substrate.SOLUTION: A substrate inspection device that inspects a substrate on the basis of a photographed image of the substrate includes: a holding unit which holds the substrate; a light source unit which emits light onto the substrate held by the holding unit; a movement mechanism which moves the holding unit; an imaging unit which images the substrate by receiving reflected light or scattered light from the substrate held by the holding unit; and a control unit. The control unit executes: the step (A) which causes the imaging unit to receive the first light from the substrate held by the holding unit and image the substrate while moving the holding unit in the first direction; and the step (B) which causes the imaging unit to receive the second light different from the first light from the substrate held by the holding unit and image the substrate while moving the holding unit in the second direction opposite to the first direction.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a substrate inspection device, a substrate inspection method, and a storage medium. [Background technology]

[0002] Patent Document 1 discloses a method for inspecting a substrate in a substrate processing system equipped with a plurality of processing devices that perform a predetermined process on the substrate. In this inspection method, a first substrate image is obtained by imaging the surface of the substrate before processing in the processing device, and a predetermined feature amount is extracted from the first substrate image. An inspection recipe corresponding to the feature amount extracted from the first substrate image is selected from a storage unit that stores a plurality of inspection recipes set corresponding to feature amounts in different ranges. Then, a second substrate image is obtained by imaging the surface of the substrate after processing in the processing device, and the presence or absence of a defect in the substrate is determined based on the selected inspection recipe and the second substrate image. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-212008 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure improves the accuracy of defect detection in defect inspection based on captured images of a substrate. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate inspection device that inspects a substrate based on an image of the substrate, the device comprising: a holding portion that holds the substrate; a light source portion that emits light to the substrate held in the holding portion; a moving mechanism that moves the holding portion; an imaging portion that images the substrate by receiving reflected light or scattered light from the substrate held in the holding portion; and a control portion, wherein the control portion executes the steps of: (A) moving the holding portion in a first direction, causing the imaging portion to receive a first light from the substrate held in the holding portion, thereby imaging the substrate; and (B) thereafter, moving the holding portion in a second direction opposite to the first direction, causing the imaging portion to receive a second light, different from the first light, from the substrate held in the holding portion, thereby imaging the substrate. Effect of the Invention

[0006] According to the present disclosure, it is possible to improve the accuracy of defect detection in defect inspection based on captured images of a substrate. [Brief description of the drawings]

[0007] [Figure 1] 1 is a plan view showing an outline of the configuration of a wafer processing system including a substrate inspection apparatus according to a first embodiment. [Diagram 2] 2 is a diagram showing a schematic outline of the internal configuration of the front side of the wafer processing system of FIG. 1. FIG. [Diagram 3] 2 is a diagram showing a schematic outline of the internal configuration of the rear side of the wafer processing system of FIG. 1. FIG. [Figure 4] 1 is a cross-sectional view showing an outline of the configuration of an inspection device. [Diagram 5] FIG. 2 is a vertical cross-sectional view showing the outline of the configuration of an inspection device. [Figure 6] 2 is a flowchart for explaining a wafer inspection by an inspection device, which is included in the wafer processing performed using the wafer processing system 1 of FIG. [Figure 7] FIG. 11 is a longitudinal sectional view showing the outline of the configuration of an inspection apparatus as a substrate inspection apparatus according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the manufacturing process of semiconductor devices and the like, a resist pattern is formed on a semiconductor wafer (hereinafter referred to as a "wafer") by sequentially performing a resist coating process in which a resist liquid is applied onto the wafer to form a resist film, an exposure process in which the resist film is exposed to light, and a development process in which the exposed resist film is developed.

[0009] Furthermore, when forming a resist pattern as described above, a defect inspection may be performed on a wafer after various processes. In this defect inspection, for example, the presence or absence of irregular defects on the film surface, the presence or absence of defects in the film, etc. In recent years, a captured image of the wafer to be inspected after processing (specifically, its processed surface, i.e., the front surface) may be used for this defect inspection (see Patent Document 1). However, the conventional method of inspecting wafers for defects using captured images of the wafer leaves room for improvement in terms of defect detection accuracy.

[0010] Therefore, the technology according to the present disclosure improves the accuracy of defect detection in defect inspection based on captured images of a substrate.

[0011] Hereinafter, a substrate inspection device and a substrate inspection method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated explanations will be omitted.

[0012] (First embodiment) <Wafer processing system> Fig. 1 is a plan view showing an outline of the configuration of a wafer processing system 1 equipped with a substrate inspection device according to a first embodiment. Figs. 2 and 3 are schematic diagrams showing an outline of the internal configuration of the front side and rear side, respectively, of the wafer processing system 1. Note that, in the following, an example will be described in which the wafer processing system 1 is a coating and developing processing system that performs a coating and developing process on a wafer W.

[0013] The wafer processing system 1 is, for example, a coating and developing processing system that performs a coating and developing process on a wafer W. As shown in Fig. 1, the wafer processing system 1 has a cassette station 10 where a cassette C containing a plurality of wafers W is carried in and out, and a processing station 11 equipped with a plurality of various processing devices that perform predetermined processing on the wafer W. The wafer processing system 1 has a configuration in which the cassette station 10, the processing station 11, and an interface station 13 that transfers the wafer W between the processing station 11 and an exposure device 12 adjacent to the opposite side of the processing station 11 are integrally connected.

[0014] The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of mounting plates 21 on which the cassettes C are placed when the cassettes C are carried in and out of the wafer processing system 1.

[0015] The cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is also movable in the up-down direction and around the vertical axis (the θ direction), and can transfer wafers W between the cassettes C on each mounting plate 21 and a transfer device in the third block G3 of the processing station 11, which will be described later.

[0016] The processing station 11 is provided with a plurality of blocks, for example, four blocks G1, G2, G3, and G4, each equipped with various devices. For example, a first block G1 is provided on the front side (negative side in the X direction in FIG. 1) of the processing station 11, and a second block G2 is provided on the rear side (positive side in the X direction in FIG. 1) of the processing station 11. A third block G3 is provided on the cassette station 10 side (negative side in the Y direction in FIG. 1) of the processing station 11, and a fourth block G4 is provided on the interface station 13 side (positive side in the Y direction in FIG. 1) of the processing station 11.

[0017] 2, in the first block G1, a plurality of liquid processing devices, for example, a developing device 30, a lower anti-reflection film forming device 31, a resist coating device 32, and an upper anti-reflection film forming device 33 are arranged in this order from the bottom. The developing device 30 develops the wafer W, and the lower anti-reflection film forming device 31 forms an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on the lower layer of the resist film of the wafer W. The resist coating device 32 applies a resist liquid to the wafer W to form a resist film, and the upper anti-reflection film forming device 33 forms an anti-reflection film (hereinafter referred to as "upper anti-reflection film") on the upper layer of the resist film of the wafer W.

[0018] For example, three of each of the developing treatment device 30, the lower anti-reflection film forming device 31, the resist coating device 32, and the upper anti-reflection film forming device 33 are arranged in a horizontal direction. The number and arrangement of these developing treatment device 30, the lower anti-reflection film forming device 31, the resist coating device 32, and the upper anti-reflection film forming device 33 can be selected arbitrarily.

[0019] In the developing treatment device 30, the lower anti-reflection film forming device 31, the resist coating device 32, and the upper anti-reflection film forming device 33, a predetermined processing liquid is applied onto the wafer W by, for example, a spin coating method. In the spin coating method, for example, the processing liquid is discharged onto the wafer W from a coating nozzle, and the wafer W is rotated to diffuse the processing liquid onto the surface of the wafer W.

[0020] As shown in FIG. 3, in the second block G2, heat treatment devices 40 for performing heat treatment such as heating and cooling of the wafer W are arranged vertically and horizontally, and the number and arrangement thereof can be selected arbitrarily.

[0021] In the third block G3, a plurality of transfer devices 50, 51, 52, 53, 54, 55, 56 are provided in this order from the bottom up. In addition, in the fourth block G4, a plurality of transfer devices 60, 61, 62 and an inspection device 63 as a board inspection device are provided in this order from the bottom up. The configuration of the inspection device 63 will be described later.

[0022] 1, an area surrounded by the first block G1 to the fourth block G4 forms a wafer transfer area D. In the wafer transfer area D, a wafer transfer device 70 is disposed.

[0023] The wafer transfer device 70 has a transfer arm 70a that is movable in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves within the wafer transfer region D and can transfer the wafer W to a predetermined unit within the surrounding first block G1, second block G2, third block G3, and fourth block G4. A plurality of wafer transfer devices 70 are arranged vertically as shown in, for example, FIG. 3, and can transfer the wafer W to a predetermined device at approximately the same height in each of the blocks G1 to G4.

[0024] In addition, in the wafer transfer region D, a shuttle transfer device 80 is provided which linearly transfers the wafer W between the third block G3 and the fourth block G4.

[0025] The shuttle transfer device 80 is movable linearly, for example, in the Y direction in Fig. 3. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the delivery device 52 in the third block G3 and the delivery device 62 in the fourth block G4.

[0026] 1, a wafer transfer device 90 is provided next to the third block G3 on the positive side in the X direction. The wafer transfer device 90 has a transfer arm 90a that is movable in, for example, the X direction, the θ direction, and the up and down directions. The wafer transfer device 90 moves up and down while supporting a wafer W, and can transfer the wafer W to each delivery device in the third block G3.

[0027] The interface station 13 is provided with a wafer transfer device 100 and a delivery device 101. The wafer transfer device 100 has a transfer arm 100a that is movable in, for example, the Y direction, the θ direction, and the up and down directions. The wafer transfer device 100 supports a wafer W on, for example, the transfer arm 100a, and can transfer the wafer W between each delivery device in the fourth block G4, the delivery device 101, and the exposure device 12.

[0028] The above-described wafer processing system 1 is provided with a control unit 200. The control unit 200 is configured by a computer equipped with a processor such as a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores a program including commands for controlling the wafer processing system 1. The above-described program includes, for example, a program for controlling the inspection of the wafer W performed based on a wafer image as a substrate image captured by the inspection device 63. The above-described program may be recorded in a computer-readable storage medium and installed in the control unit 200 from the storage medium H.

[0029] <Inspection Equipment 63> Next, a description will be given of the configuration of the above-mentioned inspection device 63. Figures 4 and 5 are a cross-sectional view and a vertical-sectional view, respectively, showing the outline of the configuration of the inspection device 63.

[0030] 4 and 5, the inspection device 63 has a housing 150. A load / unload opening 150a for loading / unloading the wafer W into / from the housing 150 is formed in one side wall of the housing 150.

[0031] Further, a wafer chuck 151 for holding a wafer W is provided in the housing 150. That is, the housing 150 accommodates the wafer chuck 151. A guide rail 152 is provided on the bottom surface of the housing 150, extending from the front side (the positive side in the X direction in FIG. 4) to the back side (the negative side in the X direction in FIG. 4) in the housing 150. A drive unit 153 for rotating the wafer chuck 151 and for moving along the guide rail 152 is provided on the guide rail 152. The drive unit 153 has a drive source (not shown) such as a motor that generates a drive force for rotating the wafer chuck 151 and a drive force for moving the drive unit 153. The wafer W held by the wafer chuck 151 can be moved by the drive unit 153 between a first position near the carry-in / out port 150a, i.e., on the front side, and a second position near the peripheral imaging unit 190 described later, i.e., on the back side. The driving unit 153 constitutes at least a part of a moving mechanism that moves the wafer chuck 151 .

[0032] Furthermore, an aligner unit 160 is provided within the housing 150 .

[0033] The aligner unit 160 is provided at the front side within the housing 150. The aligner unit 160 has a light-projecting unit 161 at either the upper or lower part, and a light-receiving unit 162 at the other part. The light-projecting unit 161 includes, for example, an LED. The light-receiving unit 162 includes, for example, a PD (Photodiode). The aligner unit 160 is provided so that the peripheral portion of the wafer W held by the wafer chuck 151 and located at the above-mentioned first position can be sandwiched between the light-projecting unit 161 and the light-receiving unit 162.

[0034] For example, while the wafer W located at the first position is rotated by the driving unit 153 together with the wafer chuck 151, light is irradiated from the light projecting unit 161 toward the light receiving unit 162, and the light receiving result at the light receiving unit 162 is output to the control unit 200. Based on the light receiving result, the control unit 200 detects the position of a notch formed on the peripheral portion of the wafer W. After the notch position is detected, the wafer chuck 151 is rotated by the driving unit 153, so that the wafer W, whose notch position has been detected, can be oriented in a predetermined direction.

[0035] In addition, within the housing 150, a front-side imaging section 170 and a front-side light source section 180 are provided.

[0036] The front surface imaging section 170 receives reflected light or scattered light from the wafer W held on the wafer chuck 151, thereby capturing an image of the wafer W. The front surface imaging section 170 includes a camera 171.

[0037] Camera 171 is provided, for example, at the upper end on the far side (the negative X-direction side in FIG. 4) within housing 150, and has a lens (not shown) and an imaging device (not shown) such as a line sensor. In this embodiment, the camera 171 serves as both the first imaging section and the second imaging section. The first imaging section images the wafer W by receiving, as the first light, reflected light from the wafer W held on the wafer chuck 151 (specifically, reflected light from the surface of the wafer W), i.e., bright field light. The second imaging section images the wafer W by receiving, as the second light, scattered light from the wafer W held on the wafer chuck 151 (specifically, scattered light from the surface of the wafer W), i.e., dark field light. The image captured by the camera 171 is output to the control unit 200.

[0038] The front surface light source unit 180 emits light to the wafer W held by the wafer chuck 151. The front surface light source unit 180 has a first light source unit 181 and a second light source unit 182.

[0039] The first light source unit 181 is provided at the upper part of the center in the depth direction (X direction in the figure) in the housing 150, and a half mirror 183 is provided below the first light source unit 181. The half mirror 183 is provided at a position facing the camera 171, with the mirror surface tilted 45 degrees upward toward the camera 171 from a state in which the mirror surface faces vertically downward. Illumination from the first light source unit 181 passes through the half mirror 183 and is irradiated downward. In addition, the light that passes through the half mirror 183 is reflected by an object below the half mirror 183, is further reflected by the half mirror 183, and is received by the camera 171. That is, the first light source unit 181 is a bright field illumination, and the camera 171 can capture an image of an object in an area irradiated by the first light source unit 181. Therefore, when the wafer chuck 151 that holds the wafer W moves along the guide rail 152, the camera 171 can capture an image of the surface of the wafer W that passes through the irradiation area of ​​the first light source unit 181.

[0040] The second light source unit 182 is provided above the first light source unit 181 in the housing 150 at a position on the front side (positive side in the X direction in the figure). Illumination from the second light source unit 182 is directed obliquely downward. The light irradiation area by the second light source unit 182 and the light irradiation area by the first light source unit 181 are approximately the same. That is, for example, the second light source unit 182 illuminates the area below the half mirror 183. The light from the second light source unit 182 is scattered by an object below the half mirror 183, reflected by the half mirror 183, and received by the camera 171. That is, the second light source unit 182 is a dark field illumination, and the camera 171 can capture an image of an object in the irradiation area by the second light source unit 182. Therefore, when the wafer chuck 151 holding the wafer W moves along the guide rail 152, the camera 171 can capture an image of the surface of the wafer W passing through the irradiation area of ​​the second light source unit 182.

[0041] Further, a peripheral imaging unit 190 is provided within the housing 150 . The peripheral imaging unit 190 is provided, for example, on the rear side (the negative side in the X direction in FIG. 4) within the housing 150, and includes a camera 191, an illumination module 192, and a mirror member (not shown).

[0042] The camera 191 has a lens (not shown) and an imaging element (not shown) such as a line sensor. The image captured by the camera 191 is output to the control unit 200.

[0043] The lighting module 192 and the mirror member are configured so that, when the wafer W held by the wafer chuck 151 is in the second position, both the light emitted from the lighting module 192 and reflected by the peripheral portion of the surface of the wafer W, and the light emitted from the lighting module 192 and reflected by the side end face of the wafer W are received by the camera 191. In other words, when the wafer W held by the wafer chuck 151 is in the second position, the camera 191 can capture images of both the peripheral portion of the surface of the wafer W and the side end face of the wafer W.

[0044] For example, when the wafer W is at the second position, the peripheral imaging unit 190 captures an image in synchronization with the rotation of the wafer chuck 151 that holds the wafer W. As a result, an image is obtained that is substantially scanned in the circumferential direction of the wafer W for the entire peripheral portion of the wafer W, specifically, for the entire peripheral portion of the front surface of the wafer W and the entire side end surface of the wafer W.

[0045] <Wafer processing> Next, a description will be given of an example of wafer processing performed using the wafer processing system 1. Fig. 6 is a flow chart for explaining the inspection of the wafer W by the inspection device 63, which is included in the above-mentioned wafer processing.

[0046] First, a cassette C storing a plurality of wafers W is placed on a predetermined placement plate 21 of the cassette station 10. Thereafter, under the control of the control unit 200, the wafer W is removed from the cassette C by the wafer transfer device 23 and transferred to, for example, the delivery device 52 in the third block G3 of the processing station 11.

[0047] Next, under the control of the control unit 200, the wafer W is transferred by the wafer transfer device 70 to the heat treatment device 40 in the second block G2, where it is subjected to temperature adjustment processing. Thereafter, the wafer W is transferred by the wafer transfer device 70 to, for example, the lower anti-reflection film forming device 31 in the first block G1, where a lower anti-reflection film is formed on the wafer W. Subsequently, the wafer W is transferred to the heat treatment device 40 for the lower layer film in the second block G2, where the lower layer film is subjected to heat processing.

[0048] Thereafter, under the control of the control unit 200, the wafer W is transferred to the resist coating unit 32 in the first block G1, where a resist film is formed on the underlayer film of the wafer W. Subsequently, the wafer W is transferred to the heat treatment unit 40 for PAB treatment in the second block G2, where the PAB treatment is performed.

[0049] Next, under the control of the control unit 200, the wafer W is transferred to the upper anti-reflection film forming apparatus 33 in the first block G1, where an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 for the upper layer film in the second block G2, where the upper layer film is subjected to heat treatment.

[0050] Next, under the control of the control unit 200, the wafer W is transferred to the delivery device 52 by the wafer transfer device 70, and then transferred to the delivery device 62 in the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the inspection device 63 by the wafer transfer device 100 in the interface station 13, and loaded into the housing 150.

[0051] The wafer W carried into the housing 150 is placed on the wafer chuck 151 which has been moved to the front side within the housing 150 under the control of the control unit 200 .

[0052] Next, under the control of the control unit 200, the wafer W is carried into the rear side of the housing 150. Specifically, the wafer W held by the wafer chuck 151 is moved along the guide rails 152 from the first position to the second position described above. At the first position, as described above, the position of the notch of the wafer W is detected, and the wafer W is oriented in a predetermined direction based on the detection result. At the second position where the loading operation into the housing 150 is completed, the peripheral imaging unit 190 images the wafer W. Specifically, the peripheral imaging unit 190 images the peripheral portion of the surface of the wafer W and the side edge surface of the wafer W.

[0053] Thereafter, under the control of the control unit 200, the wafer W is carried out from the rear side of the housing 150 and moved to the front side of the housing 150. Then, the wafer W is carried out of the housing 150 in the inspection device 63 by the wafer transfer device 100.

[0054] In addition, in the inspection device 63, while the wafer W is positioned inside the housing 150, the front surface imaging unit 170 captures an image of the wafer W under the control of the control unit 200.

[0055] Specifically, under the control of the control unit 200, as shown in FIG. 6, the wafer chuck 151 is moved in a first direction, that is, toward the rear of the housing 150 (the negative X direction in FIG. 4), while the bright field light from the wafer W held on the wafer chuck 151 is received by the front surface imaging unit 170 to image the wafer W (step S1).

[0056] More specifically, after the wafer W is carried into the housing 150, while the wafer W, which has been set in a predetermined orientation at the first position, is moved along the depth direction to the second position, only the first light source unit 181 and the second light source unit 182 of the front surface light source unit 180 are turned on. In addition, in synchronization with the movement to the second position, an image of the front surface of the wafer W is captured by the camera 171 of the front surface imaging unit 170. The imaging result by the front surface imaging unit 170 is output to the control unit 200, and the image of the wafer W captured by bright field light (specifically, an image of the front surface of the wafer W) is acquired by the control unit 200.

[0057] After imaging while moving toward the back of the housing 150 as described above, under the control of the control unit 200, the wafer chuck 151 is moved toward the front of the housing 150 (the positive X direction in FIG. 4), which is a second direction opposite to the first direction, while the dark field light from the wafer W held on the wafer chuck 151 is received by the front surface imaging unit 170 to image the wafer W (step S2).

[0058] Specifically, while the wafer W is moved from the second position to the first position along the depth direction, only the latter of the first light source unit 181 and the second light source unit 182 of the front surface light source unit 180 is turned on. Also, in synchronization with the movement to the first position, an image of the front surface of the wafer W is captured by the camera 171 of the front surface imaging unit 170. The imaging result by the front surface imaging unit 170 is output to the control unit 200, and the image of the wafer W captured by the dark field light (specifically, an image of the front surface of the wafer W) is acquired by the control unit 200.

[0059] When the image of the wafer W captured by bright field light and the image of the wafer W captured by dark field light are acquired, the control unit 200 inspects the wafer W based on both captured images (step S3). Specifically, the control unit 200 performs a defect inspection on the surface of the wafer W based on both captured images. More specifically, the control unit 200 performs both a defect inspection on the surface of the wafer W based on the image of the wafer W captured by bright field light and a defect inspection on the surface of the wafer W based on the image of the wafer W captured by dark field light. The defect inspection based on the image of the wafer W captured by bright field light is performed with reference to a reference image of the wafer W captured by bright field light that has been acquired in advance. For example, a defect is detected based on the amount of change in pixel value from the reference image, and specifically, a portion where the amount of change in pixel value from the reference image exceeds a threshold value is detected as a defect. The same applies to the defect inspection based on the image of the wafer W captured by dark field light.

[0060] The wafer W unloaded from the housing 150 of the inspection device 63 is transferred by the wafer transfer device 100 to the exposure device 12 under the control of the control unit 200, where it is exposed to a predetermined pattern. Next, the wafer W is transferred by the wafer transfer device 100 to the delivery device 60 in the fourth block G4. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the heat treatment device 40, where it is subjected to PEB treatment. Next, the wafer W is transferred by the wafer transfer device 70 to the development treatment device 30, where it is subjected to development treatment.

[0061] After the development process is completed, the wafer W is transferred to the heat treatment device 40 under the control of the control unit 200, and is subjected to a post-bake process. Next, the wafer W is transferred to the delivery device 50 in the third block G3 by the wafer transfer device 70. Thereafter, the wafer W is transferred to the cassette C on the predetermined mounting plate 21 by the wafer transfer device 23 in the cassette station 10, and a series of wafer processes is completed. The above-mentioned wafer processes are also performed on the other wafers W.

[0062] <Main Effects of This Embodiment> As described above, the method for inspecting the wafer W according to the present embodiment inspects the wafer W based on an image of the wafer W, (a) a step of receiving bright field light as a first light from the wafer W held on the wafer chuck 151 by the front surface imaging unit 170 while moving the wafer chuck 151 in a first direction toward the back of the housing 150 (the negative X direction in FIG. 4 ), and imaging the wafer W; (b) Thereafter, the wafer chuck 151 is moved in a second direction opposite to the first direction, toward the front of the housing 150 (the positive X direction in FIG. 4), while receiving a second light different from the first light from the substrate held by the holding unit using the front surface imaging unit 170, thereby imaging the substrate. That is, the method for inspecting the wafer W according to this embodiment inspects the wafer W based on an image of the wafer W captured by bright field light and an image of the wafer W captured by dark field light. Specifically, the method for inspecting the wafer W according to this embodiment inspects the wafer W for defects based on the image of the wafer W captured by bright field light (hereinafter referred to as bright field inspection) and inspects the wafer W for defects based on the image of the wafer W captured by dark field light (hereinafter referred to as dark field inspection).

[0063] The defects that are easily detected differ between bright-field inspection and dark-field inspection. In bright-field inspection, changes in the reflectance of light of the object to be imaged, i.e., the object to be detected for defects, are detected as abnormalities, i.e., defects, and therefore it is possible to detect not only irregular defects on the film surface of the wafer W, but also defects in the film if the wavelength of the illumination light matches the spectral characteristics of the film on the wafer W. However, in bright-field inspection, when the wavelength of the illumination light is fixed, the image of the wafer W is affected by thin film interference, so that it is difficult to detect irregular defects on the film surface, depending on the film thickness. In particular, if the film on the wafer W is thick, the defect detection accuracy in bright-field inspection decreases. On the other hand, in dark-field inspection, light scattered from the surface of the defect detection target is received, so unevenness on the film surface can be detected regardless of the thickness of the film on the wafer W. However, in dark-field inspection, it is difficult to detect defects in the film because light scattered from the surface of the defect detection target is received.

[0064] In this embodiment, since both such bright-field inspection and dark-field inspection are performed, it is possible to improve the accuracy of defect detection in the defect inspection of the wafer W based on the captured image of the wafer W, compared to the case where only one of them is performed. Specifically, it is possible to detect both defects on the surface of the film on the wafer W and defects in the film on the wafer W, regardless of the thickness of the film on the wafer W.

[0065] In addition, the image of the wafer W captured by bright field light and the image of the wafer W captured by dark field light are acquired while the wafer W is reciprocated once within the housing 150. Therefore, the time required to acquire both images can be shortened compared to the case where one of the image of the wafer W captured by bright field light and the image of the wafer W captured by dark field light is acquired while the wafer W is reciprocated once within the housing 150, and the other image is acquired while the wafer W is reciprocated once again within the housing 150. Therefore, according to this embodiment, it is possible to prevent the time required to acquire the image of the wafer W used for defect inspection of the wafer W from becoming long.

[0066] <Inspection of the wafer W based on the captured image of the wafer W> Next, an example of defect inspection of the wafer W based on an image of the wafer W captured with bright field light and an image of the wafer W captured with dark field light will be described.

[0067] As described above, the control unit 200 performs both a defect inspection of the surface of the wafer W based on an image of the wafer W captured using bright field light, i.e., a bright field inspection, and a defect inspection of the surface of the wafer W based on an image of the wafer W captured using dark field light, i.e., a dark field inspection.

[0068] The control unit 200 may estimate the cause of defects on the wafer W based on the bright-field inspection and the dark-field inspection.

[0069] For example, if the film on the wafer W is thick and a defect is detected only by dark-field inspection, the defect is considered to be present on the film surface, and the control unit 200 estimates that the cause of the detected defect on the wafer W is poor coating, scratches, etc. Furthermore, if a defect is detected only by bright-field inspection, it is assumed that the defect is present in the film, and the control unit 200 presumes that a foreign object or bubble in the coating liquid used to form the film is the cause of the detected defect on the wafer W.

[0070] The thickness of the film on the wafer W can be determined based on, for example, a process recipe stored in a storage unit (not shown). Information relating the defect detection result to its cause is stored in advance in the storage unit (not shown) and is referred to by the control unit 200 when estimating the cause of the defect.

[0071] Second embodiment <Inspection equipment 63A> Next, FIG. 7 is a vertical sectional view showing the outline of the configuration of an inspection apparatus 63A serving as a board inspection apparatus according to the second embodiment.

[0072] In the inspection device 63 according to the first embodiment shown in Figures 4 and 5, the camera 171 of the front-side imaging section 170 serves as both the first imaging section and the second imaging section. In contrast, in the inspection device 63A according to the second embodiment shown in Figure 7, the front-side imaging section 170A has a camera 301 as the first imaging section and a camera 302 as the second imaging section.

[0073] In the first embodiment, the light irradiation area by the second light source unit 182 for dark field light coincides with the light irradiation area by the first light source unit 181 for bright field light. In contrast, in this embodiment, the light irradiation area by the second light source unit 182A for dark field light does not coincide with the light irradiation area by the first light source unit 181 for bright field light. Specifically, in this embodiment, for example, the light irradiation area by the second light source unit 182A for dark field light is located in front of the light irradiation area by the first light source unit 181 for bright field light (the positive X-direction side in FIG. 7).

[0074] In the inspection device 63A, similarly to the inspection device 63 according to the first embodiment, while the wafer W is positioned in the housing 150, the front surface imaging unit 170A captures an image of the wafer W under the control of the control unit 200.

[0075] Specifically, under the control of the control unit 200, the wafer chuck 151 is moved in a first direction, that is, toward the rear of the housing 150 (the negative X direction in FIG. 4), while the bright field light from the wafer W held on the wafer chuck 151 is received by the front surface imaging unit 170A to image the wafer W.

[0076] More specifically, after the wafer W is carried into the housing 150, while the wafer W, which is oriented in a predetermined direction at the first position, is moved to the second position along the depth direction, only the first light source unit 181A and the second light source unit 182A of the front surface light source unit 180 are turned on. In addition, in synchronization with the movement to the second position, an image of the front surface of the wafer W is captured by the camera 301 of the front surface imaging unit 170A. The image captured by the camera 301 is output to the control unit 200, and the image of the wafer W captured by bright field light (specifically, an image of the front surface of the wafer W) is acquired by the control unit 200.

[0077] After imaging while moving toward the back of the housing 150 as described above, under the control of the control unit 200, the wafer chuck 151 is moved toward the front of the housing 150 (the positive X direction in Figure 4), which is a second direction opposite to the first direction, while the dark field light from the wafer W held on the wafer chuck 151 is received by the front surface imaging unit 170A to image the wafer W.

[0078] Specifically, while the wafer W is moved from the second position to the first position along the depth direction, only the latter of the first light source unit 181A and the second light source unit 182A of the front surface light source unit 180A is turned on. In addition, in synchronization with the movement to the first position, an image of the front surface of the wafer W is captured by the camera 302 of the front surface imaging unit 170A. The image captured by the camera 302 is output to the control unit 200, and the image of the wafer W captured by the dark field light (specifically, an image of the front surface of the wafer W) is acquired by the control unit 200.

[0079] In this embodiment as well, when an image of the wafer W captured using bright field light and an image of the wafer W captured using dark field light are acquired, the control unit 200 inspects the wafer W based on both captured images.

[0080] <Modification 1 of the second embodiment> In the above example, using the surface imaging unit 170A, one image of the wafer W was acquired using bright field light as the first light when the wafer W moved toward the back of the casing 150 (hereinafter abbreviated as "when moving toward the back"), and one image of the wafer W was acquired using dark field light as the second light when the wafer W moved toward the front of the casing 150 (hereinafter abbreviated as "when moving toward the front"), for a total of two images. Alternatively, the front surface imaging unit 170A may be used to capture a total of four images of the wafer W using both bright field light and dark field light during movement in the back direction and movement in the front direction. Then, the control unit 200 may inspect the wafer W based on the four captured images.

[0081] In the above example, when an image of the wafer W is acquired using the front-side imaging section 170A, the arrangement of the wafer W held by the wafer chuck 151 with respect to the front-side imaging section 170A (hereinafter, abbreviated as "arrangement of the wafer W with respect to the front-side imaging section 170A") is not different between the time of moving in the depth direction and the time of moving in the front direction. Instead of this, when an image of the wafer W is acquired using the front-side imaging section 170A, the arrangement of the wafer W with respect to the front-side imaging section 170A may be different between the time of moving in the depth direction and the time of moving in the front direction, that is, the wafer W held by the wafer chuck 151 may be shifted with respect to the front-side imaging section 170A. The arrangement of the wafer W with respect to the front-side imaging section 170A is, for example, the orientation of the wafer W with respect to the front-side imaging section 170A, and specifically, the orientation of the wafer W with respect to the front-side imaging section 170A may be shifted by 45° between the time of moving in the depth direction and the time of moving in the front direction.

[0082] This makes it possible to make the portion of the wafer W where reflected light or scattered light reaches between the imaging elements of the line cameras constituting the cameras 301 and 302 and is not received different between when the wafer W is moved in the depth direction and when the wafer W is moved in the front direction. Therefore, by inspecting the wafer W based on the captured image of the wafer W when moved in the depth direction and the captured image of the wafer W when moved in the front direction, in which the position of the wafer W relative to the front-side imaging unit 170A is different, the following effect can be obtained. That is, it is possible to detect defects even in portions where defects could not be detected if the position of the wafer W relative to the front-side imaging unit 170A is the same between when the wafer W is moved in the depth direction and when the wafer W is moved in the front direction.

[0083] When the wafer chuck 151 is configured to be freely movable in a direction perpendicular to the depth direction within a horizontal plane, the "position of the wafer W with respect to the front surface imaging unit 170A" that is made different when moving in the depth direction and when moving in the front direction may be a position in the perpendicular direction of the wafer W. In this case, for example, the position of the wafer W held by the wafer chuck 151 in the perpendicular direction is shifted by half the pitch of the imaging elements of the line cameras constituting the cameras 301 and 302 when moving in the depth direction and when moving in the front direction.

[0084] In addition, in the case where the wafer chuck 151 is configured so that the angle of the upper surface of the wafer chuck 151 on which the wafer W is placed relative to the horizontal plane can be freely adjusted, the above-mentioned "positioning of the wafer W relative to the front-surface imaging unit 170A" may be the angle of the upper surface of the wafer chuck 151 relative to the horizontal plane, i.e., the angle of the surface of the wafer W relative to the horizontal plane.

[0085] Incidentally, even when using the inspection apparatus 63 according to the first embodiment, when an image of the wafer W is acquired using the front surface imaging unit 170, the position of the wafer W held by the wafer chuck 151 may be different when moving in the rear direction and when moving in the front direction.

[0086] <Modification 2 of the second embodiment> In the above-described first modification, both an image of the wafer W captured by bright field light and an image of the wafer W captured by dark field light are acquired during each of the movement in the rearward direction and the movement in the forward direction. Alternatively, both an image of the wafer W captured by bright field light and an image of the wafer W captured by dark field light may be acquired only during either the movement in the rearward direction or the movement in the forward direction, and either one of the image of the wafer W captured by bright field light and the image of the wafer W captured by dark field light may be acquired during the other.

[0087] Also, a defect may be detected based on an image of the wafer W based on the result of receiving one of the bright field light and the dark field light obtained during the movement in the depth direction, i.e., a first defect detection may be performed, and a defect may be detected based on an image of the wafer W based on the result of receiving the one of the light obtained during the movement in the depth direction, i.e., a second defect detection may be performed. Then, a defect detected by only one of the first defect detection and the second defect detection may be excluded from the defect detection result as a false defect. That is, when there are two images of the wafer W captured using the same illumination method, a defect detected based only on one of the images may be excluded from the defect detection result as a false defect.

[0088] <Modification 3 of the second embodiment> In addition, both an image of the wafer W captured by bright field light and an image of the wafer W captured by dark field light are acquired only when moving in either the backward direction or the forward direction, and neither image needs to be acquired when moving in the other direction.

[0089] <Modifications of the First and Second Embodiments> In the above example, the wafer W is moved back and forth only once in the housing 150. Instead of this, the wafer W may be moved back and forth again in the housing 150 according to the result of the inspection of the wafer W based on the captured image of the wafer W acquired in the first reciprocation, and an image of the wafer W may be acquired at that time, and the wafer W may be inspected again based on the acquired image. For example, if a defect is detected only based on one of the captured image of the wafer W by bright field light and the captured image of the wafer W by dark field light in the first reciprocation, only the bright field light or the dark field light used in the captured image in which the defect was detected may be used when the wafer W is moved back and forth again. In this case, captured images of the wafer W may be acquired when the wafer W is moved back and forth again, respectively. In addition, when the wafer W is moved back and forth again, the arrangement of the wafer W with respect to the front surface imaging units 170 and 170A may be different when the wafer W is moved back and forth and when the wafer W is moved forward. Alternatively or in addition, the position of the wafer W with respect to the front surface imaging units 170 and 170A may be different between the first reciprocation and the second reciprocation.

[0090] Also, for example, for the second wafer W out of a plurality of wafers W (e.g., 25 wafers) housed in a cassette C, both defect detection based on an image of the wafer W captured by bright field light and defect detection based on an image of the wafer W captured by dark field light are performed. Then, if a defect is detected only in one of the two, only the bright field light or the dark field light used for the captured image in which the defect was detected may be used for the third and subsequent wafers W.

[0091] <Modifications of the First Light and the Second Light> In the above examples, the first light is bright-field light and the second light is dark-field light, but the first light may be dark-field light and the second light may be bright-field light.

[0092] Furthermore, the first light and the second light are not limited to a combination of dark field light and bright field light. For example, the first light and the second light may be lights having different wavelength bands. Specifically, the wavelength band of one of the first light and the second light may be entirely included in the wavelength band of the other, that is, may be a part of the wavelength band of the other. By using both the first light and the second light having such different wavelength bands, it is possible to detect defects that cannot be detected when only one of the first light and the second light is used.

[0093] The first light and the second light may be lights having different amounts of light received by the front-side imaging unit due to an aperture of the front-side imaging unit. By using both the first light and the second light having different amounts of light received by the front-side imaging unit due to an aperture, defects that cannot be detected when only light with a small aperture and a large amount of light is used can be detected. Furthermore, the life of the light source can be extended compared to when only light with a large aperture and a small amount of light is used. Alternatively, an image of the wafer W may be acquired with light having a small aperture and a large amount of light when moving in the rearward direction, and a coarse defect inspection of the wafer W may be performed based on the acquired image, and only when a defect is detected, an image of the wafer W may be acquired with light having a large aperture and a small amount of light when moving in the forward direction. Then, a fine defect inspection of the wafer W may be performed based on the acquired image. In this case, it is not necessary to provide a light source section for the first light and a light source section for the second light separately, and the light source section can be shared between the first light and the second light.

[0094] <Other examples of surface light source parts> An angle adjustment mechanism may be provided for adjusting the relative angle of light from the front surface light source unit with respect to the wafer W held on the wafer chuck 151. The angle adjustment mechanism may adjust the angle of the optical axis of the front surface light source unit, or may adjust the angle of the wafer mounting surface of the wafer chuck 151. In the case of dark field light irradiated from the front surface light source unit, the defect detection rate changes depending on the incident angle of the light with respect to the wafer W, so that the defect detection rate can be improved by providing the angle adjustment mechanism as described above.

[0095] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. From such an arbitrary combination, the actions and effects of each of the components in the combination can be obtained as a matter of course, and other actions and effects that are obvious to a person skilled in the art from the description of this specification can be obtained.

[0096] In addition, the effects described in this specification are merely explanatory or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification in addition to or in place of the above effects.

[0097] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A substrate inspection device that inspects a substrate based on a captured image of the substrate, comprising: A holder for holding the substrate; a light source unit that emits light toward the substrate held by the holder; A moving mechanism that moves the holding unit; an imaging unit that images the substrate by receiving reflected light or scattered light from the substrate held by the holding unit; A control unit, The control unit is (A) moving the holder in a first direction while receiving a first light from the substrate held by the holder with the imaging unit to image the substrate; (B) thereafter, the substrate inspection device executes a step of moving the holding portion in a second direction opposite to the first direction, while causing the imaging portion to receive a second light different from the first light from the substrate held by the holding portion, thereby imaging the substrate. (2) The substrate inspection apparatus according to (1), wherein one of the first light and the second light is bright field light, and the other is dark field light. (3) The substrate inspection apparatus according to (1), wherein the first light and the second light have different wavelength bands. (4) the imaging unit has an aperture, The substrate inspection device according to (1), wherein the first light and the second light are received by the imaging unit in amounts different from each other through the aperture. (5) The substrate inspection device according to any one of (1) to (4), wherein the light source section includes a first light source section for the first light and a second light source section for the second light. (6) The substrate inspection device according to any one of (1) to (5), wherein the imaging section includes a first imaging section that receives the first light and a second imaging section that receives the second light. (7) In at least one of the steps (A) and (B), the substrate inspection apparatus described in (6) above, wherein while moving the holding portion, the first light and the second light from the substrate held by the holding portion are received by the first imaging portion and the second imaging portion, respectively, to image the substrate. (8) The substrate inspection apparatus according to (7), wherein the control unit changes the position of the substrate held by the holding unit relative to the imaging unit during process (A) and process (B). (9) The control unit of the substrate inspection apparatus described in (8) detects defects on the substrate based on an image of the substrate obtained during movement in the first direction in process (A) and an image of the substrate obtained during movement in the second direction in process (B). (10) The control unit (C) detecting defects on the substrate based on an image of the substrate captured by receiving the first light; (D) detecting defects on the substrate based on an image of the substrate captured by receiving the second light; and (E) a step of estimating a cause of the defect on the substrate based on the results of the steps (C) and (D). (11) The control unit (F) detecting defects on the substrate based on an image of the substrate captured by receiving one of the first light and the second light obtained in the (A) step; (G) detecting defects on the substrate based on an image of the substrate obtained by the one light receiving result obtained in the (B) step; (H) excluding defects detected in only one of the step (F) and the step (G) from a defect detection result. (12) A substrate inspection apparatus for inspecting a substrate based on a captured image of the substrate, comprising: A holder for holding the substrate; a light source unit that emits light toward the substrate held by the holder; A moving mechanism that moves the holding unit; an imaging unit that images the substrate by receiving reflected light or scattered light from the substrate held by the holding unit; A control unit, The control unit is A substrate inspection device that performs a process of moving the holding unit in a predetermined direction, receiving a first light from the substrate held by the holding unit with the imaging unit to image the substrate, and receiving a second light, different from the first light, from the substrate held by the holding unit with the imaging unit to image the substrate. (13) A method for inspecting a substrate based on an image of the substrate, comprising: (a) moving a holder that holds the substrate in a first direction, receiving a first light from the substrate held by the holder with an imaging unit, and capturing an image of the substrate; (b) thereafter, while moving the holding portion in a second direction opposite to the first direction, receiving a second light different from the first light from the substrate held by the holding portion with the imaging portion, and imaging the substrate. (14) The substrate inspection method according to (13), wherein the imaging section includes a first imaging section that receives the first light and a second imaging section that receives the second light. (15) In at least one of the steps (a) and (b), the first light and the second light from the substrate held by the holding portion are received by the first imaging portion and the second imaging portion, respectively, while moving the holding portion, and the substrate is imaged. (16) The substrate inspection method according to (15), wherein the arrangement of the substrate held by the holding section relative to the imaging section is different between the step (a) and the step (b). (17) The substrate inspection method described in (16), further comprising a step of detecting defects on the substrate based on an image of the substrate obtained during movement in the first direction in step (a) and an image of the substrate obtained during movement in the second direction in step (b). (18) One of the first light and the second light is bright field light, and the other is dark field light; (c) detecting defects on the substrate based on an image of the substrate captured as a result of receiving the first light; and (d) detecting defects on the substrate based on an image of the substrate captured by receiving the second light; and The substrate inspection method according to any one of (13) to (17), further comprising: (e) a step of estimating a cause of the defect on the substrate based on results of the step (C) and the step (D). (19)(f) detecting defects on the substrate based on an image of the substrate captured by receiving one of the first light and the second light obtained in the step (a); (g) detecting defects on the substrate based on an image of the substrate captured by the one of the light receiving results obtained in the (b) step; The substrate inspection method according to any one of (15) to (17), further comprising: (h) a step of excluding defects detected in only one of the step (f) and the step (g) from the defect detection results. (20) A readable computer storage medium storing a program that operates on a computer of a control unit that controls a substrate inspection apparatus so as to cause the substrate inspection apparatus to execute a method for inspecting a substrate based on an image of the substrate, The method comprises: a step of receiving a first light from the substrate held by a holding unit with an imaging unit while moving the holding unit that holds the substrate in a first direction, and capturing an image of the substrate; Then, while moving the holding unit in a second direction opposite to the first direction, the imaging unit receives a second light, which is different from the first light, from the substrate held by the holding unit, and images the substrate. [Explanation of symbols]

[0098] 63, 63A Inspection equipment 151 Wafer chuck 153 Drive unit 170, 170A Surface imaging unit 171 Camera 180 Surface light source section 180, 180A surface light source section 200 Control section H storage medium W wafer

Claims

1. A substrate inspection apparatus that inspects a substrate based on an image of the substrate, A holder for holding the substrate; a light source unit that emits light toward the substrate held by the holder; A moving mechanism that moves the holding unit; an imaging unit that images the substrate by receiving reflected light or scattered light from the substrate held by the holding unit; A control unit, The control unit is (A) moving the holding unit in a first direction while receiving a first light from the substrate held by the holding unit with the imaging unit to image the substrate; (B) then, while moving the holding portion in a second direction opposite to the first direction, the imaging portion receives a second light different from the first light from the substrate held by the holding portion, thereby imaging the substrate.

2. 2. The substrate inspection apparatus according to claim 1, wherein one of the first light and the second light is bright field light, and the other is dark field light.

3. The substrate inspection device according to claim 1 , wherein the first light and the second light have different wavelength bands.

4. The imaging unit has an aperture, The substrate inspection device according to claim 1 , wherein the first light and the second light are received by the imaging unit in amounts different from each other through the diaphragm.

5. 5. The substrate inspection device according to claim 1, wherein the light source section includes a first light source section for the first light and a second light source section for the second light.

6. 5. The substrate inspection apparatus according to claim 1, wherein the imaging section includes a first imaging section that receives the first light, and a second imaging section that receives the second light.

7. 7. The substrate inspection device of claim 6, wherein in at least one of the steps (A) and (B), the holding portion is moved while the first light and the second light from the substrate held by the holding portion are received by the first imaging portion and the second imaging portion, respectively, to image the substrate.

8. The substrate inspection apparatus according to claim 7 , wherein the control unit changes a position of the substrate held by the holding unit with respect to the imaging unit between the step (A) and the step (B).

9. 9. The substrate inspection apparatus of claim 8, wherein the control unit detects defects on the substrate based on an image of the substrate obtained during movement in the first direction in process (A) and an image of the substrate obtained during movement in the second direction in process (B).

10. The control unit is (C) detecting defects on the substrate based on an image of the substrate captured as a result of receiving the first light; and (D) detecting defects on the substrate based on an image of the substrate captured by receiving the second light; and 3. The substrate inspection apparatus according to claim 2, further comprising: (E) a step of estimating a cause of the defect on the substrate based on results of the steps (C) and (D).

11. The control unit is (F) detecting defects on the substrate based on an image of the substrate captured by receiving one of the first light and the second light obtained in the (A) step; (G) detecting defects on the substrate based on an image of the substrate obtained by the one light receiving result obtained in the (B) step; 8. The substrate inspection apparatus according to claim 7, further comprising: (H) a step of excluding defects detected in only one of the step (F) and the step (G) from the defect detection result.

12. A substrate inspection apparatus that inspects a substrate based on an image of the substrate, A holder for holding the substrate; a light source unit that emits light toward the substrate held by the holder; A moving mechanism that moves the holding unit; an imaging unit that images the substrate by receiving reflected light or scattered light from the substrate held by the holding unit; A control unit, The control unit is A substrate inspection device that performs a process of moving the holding portion in a predetermined direction, receiving a first light from the substrate held in the holding portion with the imaging portion to image the substrate, and receiving a second light, different from the first light, from the substrate held in the holding portion with the imaging portion to image the substrate.

13. 1. A method for inspecting a substrate based on an image of the substrate, comprising: (a) moving a holder that holds the substrate in a first direction, receiving a first light from the substrate held by the holder with an imaging unit, and capturing an image of the substrate; (b) then, while moving the holding portion in a second direction opposite to the first direction, receiving a second light different from the first light from the substrate held by the holding portion with the imaging portion, and imaging the substrate.

14. The substrate inspection method according to claim 13 , wherein the imaging section includes a first imaging section that receives the first light, and a second imaging section that receives the second light.

15. 15. The substrate inspection method according to claim 14, wherein in at least one of the steps (a) and (b), while moving the holding portion, the first light and the second light from the substrate held by the holding portion are received by the first imaging portion and the second imaging portion, respectively, to image the substrate.

16. The substrate inspection method according to claim 15 , wherein an arrangement of the substrate held by the holding unit with respect to the imaging unit is different between the step (a) and the step (b).

17. 17. The substrate inspection method according to claim 16, further comprising the step of detecting defects on the substrate based on an image of the substrate obtained during movement in the first direction in the step (a) and an image of the substrate obtained during movement in the second direction in the step (b).

18. one of the first light and the second light is bright field light, and the other is dark field light; (c) detecting defects on the substrate based on an image of the substrate captured as a result of receiving the first light; and (d) detecting defects on the substrate based on an image of the substrate captured as a result of receiving the second light; and The substrate inspection method according to any one of claims 13 to 17, further comprising: (e) a step of estimating a cause of the defect on the substrate based on results of the steps (C) and (D).

19. (f) detecting defects on the substrate based on an image of the substrate captured by receiving one of the first light and the second light obtained in the (a) step; (g) detecting defects on the substrate based on an image of the substrate obtained by the one light receiving result obtained in the (b) step; The substrate inspection method according to any one of claims 15 to 17, further comprising: (h) a step of excluding defects detected in only one of the steps (f) and (g) from the defect detection results.

20. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a substrate inspection apparatus so as to cause the substrate inspection apparatus to execute a method for inspecting a substrate based on an image of the substrate, The method comprises: a step of receiving a first light from the substrate held by a holding unit with an imaging unit while moving the holding unit that holds the substrate in a first direction, and capturing an image of the substrate; Then, while moving the holding portion in a second direction opposite to the first direction, the imaging portion receives a second light different from the first light from the substrate held by the holding portion, and images the substrate.

Images