Method for manufacturing light-emitting device

Abstract

To provide a method for manufacturing a light-emitting device which can reduce damages on a laminate body and can easily dice the laminate body.SOLUTION: The method for manufacturing a light-emitting device includes the steps of: preparing a laminate body having a wavelength conversion layer, a translucent layer on the wavelength conversion layer, and a semiconductor layer on the translucent layer; removing a part of the semiconductor layer and separating the semiconductor layer into a plurality of semiconductor parts on the wavelength conversion layer; and dividing the wavelength conversion layer along the removed part of the semiconductor layer and dicing the laminate body into a plurality of light-emitting layers.SELECTED DRAWING: Figure 1L

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a light emitting device. [Background technology]

[0002] Patent Document 1 discloses a method for manufacturing a light emitting device, which includes the steps of peeling off a substrate on which a semiconductor laminate is grown to expose a first surface of the semiconductor laminate, forming a phosphor layer on the exposed first surface, and singulating the resulting semiconductor laminate after the phosphor layer has been formed on the first surface. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-141176 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a method for manufacturing a light emitting device that can easily separate a laminate while reducing damage to the laminate. [Means for solving the problem]

[0005] According to one aspect of the present invention, a method for manufacturing a light emitting device includes the steps of: preparing a laminate having a wavelength conversion layer, a light transmitting layer disposed on the wavelength conversion layer, and a semiconductor layer disposed on the light transmitting layer; separating the semiconductor layer on the wavelength conversion layer into a plurality of semiconductor parts by removing a portion of the semiconductor layer; and fracturing the wavelength conversion layer along the portion where the portion of the semiconductor layer has been removed to separate the laminate into a plurality of light emitting devices. Effect of the Invention

[0006] According to the present invention, it is possible to provide a method for manufacturing a light emitting device that can easily separate the laminated body while reducing damage to the laminated body. [Brief description of the drawings]

[0007] [Figure 1A] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1B] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1C] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1D] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1E] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1F] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1G] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1H] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1I] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1J] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1K] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 1L] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 2A] 10 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the second embodiment. FIG. [Figure 2B] 10 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the second embodiment. FIG. [Figure 3A]13 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the third embodiment. FIG. [Figure 3B] FIG. 3B is an enlarged cross-sectional view of part A in FIG. 3A. [Figure 3C] 13 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the third embodiment. FIG. [Figure 3D] 13 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the third embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described with reference to the drawings. In each drawing, the same components are given the same reference numerals. Since each drawing is a schematic illustration of the embodiment, the scale, interval, or positional relationship of each component may be exaggerated, or some components may not be shown. In addition, as a cross-sectional view, an end view showing only a cut surface may be shown. In addition, in the cross-sectional view, the cross-section of the semiconductor layer is not hatched in order to make the boundaries of each layer of the semiconductor layer easier to see.

[0009] In the following description, components having substantially the same functions are indicated by common reference symbols, and descriptions may be omitted. In addition, terms indicating a specific direction or position (for example, "upper", "lower", and other terms including these terms) may be used. However, these terms are merely used for the purpose of making the relative direction or position in the referenced drawings easier to understand. As long as the relative direction or position relationship by terms such as "upper", "lower", etc. in the referenced drawings is the same, the arrangement in drawings other than the present disclosure, in actual products, etc., may not be the same as that in the referenced drawings. In this specification, the positional relationship expressed as "upper" includes cases where the members are in contact with the target to be covered and cases where the members are not in contact with the target to be covered but are located above. In this specification, unless otherwise specified, the member covering the target to be covered includes cases where the member is in contact with the target to be covered and directly covers the target to be covered, and cases where the member is not in contact with the target to be covered and indirectly covers the target to be covered. In addition, "planar view" refers to a planar view of the semiconductor layer on the wavelength conversion layer seen from above.

[0010] [First embodiment] A method for manufacturing the light emitting device 1 according to the first embodiment will be described with reference to FIGS. 1A to 1L.

[0011] The manufacturing method of the light-emitting device according to the first embodiment includes the steps of preparing a laminate 101 having a wavelength conversion layer 30, a light-transmitting layer 20, and a semiconductor layer 10, separating the semiconductor layer 10 on the wavelength conversion layer 30 into a plurality of semiconductor sections 60, and fracturing the wavelength conversion layer 30 to separate the laminate 101 into a plurality of light-emitting devices 1.

[0012] <Step of Preparing Laminate> As shown in FIG. 1F, the laminate 101 has a wavelength conversion layer 30, a light transmitting layer 20 disposed on the wavelength conversion layer 30, and a semiconductor layer 10 disposed on the light transmitting layer 20.

[0013] (Semiconductor layer) The semiconductor layer 10 has an n-side semiconductor layer 11, a p-side semiconductor layer 13, and an active layer 12 located between the n-side semiconductor layer 11 and the p-side semiconductor layer 13. The active layer 12 is a light-emitting layer that emits light, and emits light with an emission peak wavelength of, for example, 210 nm or more and 580 nm or less. The active layer 12 can have, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The n-side semiconductor layer 11 has a semiconductor layer including an n-type impurity. The p-side semiconductor layer 13 has a semiconductor layer including a p-type impurity.

[0014] The semiconductor layer 10 has a first surface 10a located opposite to the surface on which the active layer 12 and the p-side semiconductor layer 13 are disposed. Light emitted by the active layer 12 is extracted to the outside of the semiconductor layer 10 mainly through the first surface 10a.

[0015] The n-side semiconductor layer 11 is located on the opposite side to the first face 10a, and has a first n-side exposed face 11a and a second n-side exposed face 11b exposed from the active layer 12 and the p-side semiconductor layer 13.

[0016] The semiconductor layer 10 is made of a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-y It includes all semiconductors with compositions in which the composition ratios x and y are changed within the respective ranges in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1). In addition, in the above chemical formula, those that further contain Group V elements other than N (nitrogen) and those that further contain various elements added to control various physical properties such as the conductivity type are also included in the "nitride semiconductor".

[0017] (wavelength conversion layer) The wavelength conversion layer 30 converts the wavelength of at least a part of the light emitted by the active layer 12. The wavelength conversion layer 30 may be a sintered body consisting essentially of phosphor, which is formed by sintering phosphor powder. Alternatively, the wavelength conversion layer 30 may be a light-transmitting material containing phosphor. The light-transmitting material may be, for example, ceramics, resin, or glass. The phosphor may be, for example, a cerium-activated yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), and cerium-activated lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce) etc. The thickness of the wavelength conversion layer 30 can be, for example, not less than 30 μm and not more than 500 μm.

[0018] (transparent layer) The light-transmitting layer 20 is located between the semiconductor layer 10 and the wavelength conversion layer 30. By having the light-transmitting layer 20 located between the semiconductor layer 10 and the wavelength conversion layer 30, it is possible to easily increase the bonding strength between the semiconductor layer 10 and the wavelength conversion layer 30 compared to a case where the semiconductor layer 10 and the wavelength conversion layer 30 are directly bonded to each other.

[0019] The light-transmitting layer 20 has high light-transmittance to the light emitted by the active layer 12. The light-transmitting layer 20 having high light-transmittance means that the light-transmitting layer 20 has a light transmittance of 50% or more, preferably 60% or more, and more preferably 80% or more to the emission peak wavelength of the light emitted by the active layer 12.

[0020] Moreover, the light transmitting layer 20 preferably has a refractive index between the refractive index of the semiconductor layer 10 and the refractive index of the wavelength conversion layer 30. This can reduce the refractive index difference between the semiconductor layer 10 and the wavelength conversion layer 30, and can reduce the reflection of light emitted from the active layer 12 between the semiconductor layer 10 and the wavelength conversion layer 30. For example, the refractive index of the semiconductor layer 10 can be appropriately selected from the range of 2.3 to 2.6, the refractive index of the wavelength conversion layer 30 can be appropriately selected from the range of 1.7 to 1.9, and the refractive index of the light transmitting layer 20 can be appropriately selected from the range of 1.6 to 2.4.

[0021] The light-transmitting layer 20 may be made of, for example, SiO2, SiN, SiON, Al2O3, Nb2O5, TiO2, etc. The light-transmitting layer 20 may have a thickness of, for example, 2 μm or more and 50 μm or less.

[0022] <Process for dividing the semiconductor layer into multiple semiconductor parts> After preparing the laminate 101, a portion of the semiconductor layer 10 is removed to separate the semiconductor layer 10 into a plurality of semiconductor portions 60 on the wavelength conversion layer 30 as shown in Fig. 1G. The portions 10A from which the portion of the semiconductor layer 10 is removed become gaps between adjacent semiconductor portions 60 that are separated from each other, and are formed in, for example, a lattice shape in plan view.

[0023] A portion of the n-side semiconductor layer 11 below the second n-side exposed surface 11b is removed, and the semiconductor layer 10 is separated into a plurality of semiconductor parts 60. In the step of separating the semiconductor layer 10 into the plurality of semiconductor parts 60, it is preferable to remove a portion of the semiconductor layer 10 by etching. This makes it possible to prevent chipping of the semiconductor layer 10 compared to the case where the portion of the semiconductor layer 10 is removed using a blade.

[0024] For example, a portion of the semiconductor layer 10 made of a nitride semiconductor can be removed by covering the laminate 101 except for a portion of the second n-side exposed surface 11b with a mask and performing RIE (Reactive Ion Etching) using a gas containing chlorine. Etching proceeds in the thickness direction of the semiconductor layer 10 from the second n-side exposed surface 11b exposed from the mask toward the first surface 10a. For example, a resist mask can be used as the mask.

[0025] In the example shown in FIG. 1G, in the process of separating the semiconductor layer 10 into a plurality of semiconductor sections 60, a portion of the light-transmitting layer 20 is also removed, and the wavelength conversion layer 30 is exposed from the semiconductor layer 10 and the light-transmitting layer 20 in a portion 10A where a portion of the semiconductor layer 10 has been removed. A portion 20A where a portion of the light-transmitting layer 20 has been removed is located below the portion 10A where a portion of the semiconductor layer 10 has been removed. The portion 10A where a portion of the semiconductor layer 10 has been removed and the portion 20A where a portion of the light-transmitting layer 20 has been removed are gaps extending in a direction penetrating the paper surface in FIG. 1G. The light-transmitting layer 20 located below each semiconductor section 60 is separated into a plurality of portions by the portions 20A where a portion of the light-transmitting layer 20 has been removed.

[0026] For example, when the light-transmitting layer 20 contains silicon oxide, a portion of the light-transmitting layer 20 can be removed by RIE using a gas containing fluorine. In the case of the RIE method, a portion of the semiconductor layer 10 and a portion of the light-transmitting layer 20 can be continuously removed by switching the type of gas.

[0027] <Step of Slicing the Laminate into a Plurality of Light-Emitting Devices> After separating the semiconductor layer 10 into a plurality of semiconductor portions 60, the wavelength conversion layer 30 is broken along the portion 10A where a part of the semiconductor layer 10 has been removed, and the laminate 101 is divided into a plurality of light emitting devices 1 as shown in FIG. 1L.

[0028] For example, the wavelength conversion layer 30 can be fractured by irradiating the wavelength conversion layer 30 with laser light and applying a pressing force thereto.

[0029] 1J, laser light L is irradiated into the wavelength conversion layer 30 from a third surface 30b opposite to a second surface 30a on which the light transmitting layer 20 and the semiconductor section 60 are arranged in the wavelength conversion layer 30. Alternatively, the laser light L may be irradiated into the wavelength conversion layer 30 from the second surface 30a. When the laser light L is irradiated from the third surface 30b, the semiconductor section 60 is less likely to be damaged by the laser light L than when the laser light L is irradiated from the second surface 30a.

[0030] The laser light L is focused at a specific depth inside the wavelength conversion layer 30, and the energy of the laser light L is concentrated at that position, forming a modified portion 200 inside the wavelength conversion layer 30. The modified portion 200 is a portion that is more embrittled than a portion where the laser light L is not focused. The laser light L is scanned along the portion 10A where a part of the semiconductor layer 10 has been removed, and a plurality of modified portions 200 are formed along the portion 10A where a part of the semiconductor layer 10 has been removed. The modified portion 200 formed by irradiation with the laser light L generates stress, and the stress causes cracks inside the wavelength conversion layer 30. The cracks extend from the modified portion 200 in the thickness direction of the wavelength conversion layer 30.

[0031] After forming the modified portion 200 by irradiation with the laser light L, as shown in FIG. 1K, a force is applied to the wavelength conversion layer 30 using a pressing member 300, and the wavelength conversion layer 30 is fractured along the portion 10A where a part of the semiconductor layer 10 has been removed. The pressing member 300 extends along the portion 10A where a part of the semiconductor layer 10 has been removed. For example, a pressing force is applied to the wavelength conversion layer 30 by the pressing member 300 from the second surface 30a side. The wavelength conversion layer 30 that has received the pressing force from the second surface 30a side starts to crack from the third surface 30b side, starting from a crack that extends from the modified portion 200 and reaches or reaches near the third surface 30b. A groove 30c with a V-shaped cross section that opens to the third surface 30b is formed along the portion 10A where a part of the semiconductor layer 10 has been removed, and this groove 30c reaches the second surface 30a, and the wavelength conversion layer 30 is fractured. Alternatively, a pressing force by a pressing member 300 may be applied to the wavelength conversion layer 30 from the third surface 30b side.

[0032] When dividing the laminate 101 into a plurality of light emitting devices 1, a method of cleaving, cutting, or etching the semiconductor layer 10 and the wavelength conversion layer 30 together by the same method is conceivable. In a method of cleaving the semiconductor layer 10 and the wavelength conversion layer 30 together, the semiconductor layer 10 is difficult to cleave. In a method of cleaving the semiconductor layer 10 and the wavelength conversion layer 30 together using a blade, chipping is likely to occur in the semiconductor layer 10, which is harder than the wavelength conversion layer 30. In a method of etching the semiconductor layer 10 and the wavelength conversion layer 30 together, etching the wavelength conversion layer 30, which is thicker than the semiconductor layer 10, takes time, which may reduce the manufacturing efficiency of the light emitting device.

[0033] According to the present embodiment, the semiconductor layer 10 is separated into a plurality of semiconductor portions 60 on the wavelength conversion layer 30, and then the wavelength conversion layer 30 is cut to separate the stacked body 101 into a plurality of light-emitting devices 1, so that a method suitable for separating the semiconductor layer 10 into the semiconductor portions 60 and for cutting the wavelength conversion layer 30 can be selected. This makes it possible to easily separate the stacked body 101 into a plurality of light-emitting devices 1 while reducing damage to the stacked body 101.

[0034] The third surface 30b of the wavelength conversion layer 30 in the light emitting device 1 is the main light extraction surface. In the light emitting device 1, light can also be extracted from the side surfaces of the semiconductor layer 10, the light transmissive layer 20, and the wavelength conversion layer 30.

[0035] 1G, by also removing part of the light-transmitting layer 20 in the step of separating the semiconductor layer 10 into the plurality of semiconductor sections 60, it becomes easier to separate the laminate 101 into individual light-emitting devices 1 by fracturing the wavelength conversion layer 30. Furthermore, in the step of separating the semiconductor layer 10 into the plurality of semiconductor sections 60, it is also possible to remove part of the wavelength conversion layer 30 located below the part from which the part of the semiconductor layer 10 and the part of the light-transmitting layer 20 have been removed, thereby reducing the thickness of the wavelength conversion layer 30. In this case, it becomes even easier to fracturing the wavelength conversion layer 30.

[0036] A portion of the second surface 30a of the wavelength conversion layer 30 located below the portion from which a portion of the semiconductor layer 10 and a portion of the light-transmitting layer 20 have been removed becomes an outer peripheral portion 30a1 exposed from the light-transmitting layer 20 and the semiconductor layer 10 in the individualized light-emitting device 1, as shown in FIG. 1L.

[0037] In the step of preparing the laminated body 101 shown in FIG. 1F, the laminated body 101 may further include a conductive layer 40, a first insulating film 51, and a second insulating film 52.

[0038] The conductive layer 40 is disposed on the p-side semiconductor layer 13 and is electrically connected to the p-side semiconductor layer 13. The conductive layer 40 has a function of diffusing a current supplied from a p-side electrode, which will be described later, in the planar direction of the p-side semiconductor layer 13.

[0039] Moreover, the conductive layer 40 can have high reflectivity with respect to the light emitted by the active layer 12. The conductive layer 40 having high reflectivity means that the conductive layer 40 has a reflectance of 50% or more, preferably 60% or more, with respect to the emission peak wavelength of the light emitted by the active layer 12. The conductive layer 40 can be made of, for example, silver or aluminum.

[0040] The first insulating film 51 covers the upper surface of the p-side semiconductor layer 13 and the conductive layer 40. Covering the conductive layer 40 with the first insulating film 51 reduces the effect of moisture and the like on the conductive layer 40, and can reduce the occurrence of migration in the conductive layer 40. As the first insulating film 51, for example, a silicon oxide film or a silicon nitride film can be used.

[0041] The second insulating film 52 covers the first insulating film 51. The second insulating film 52 also covers a part of the first n-side exposed surface 11a and a part of the second n-side exposed surface 11b. The second insulating film 52 also covers a side surface of the semiconductor layer 10 that is continuous with the first n-side exposed surface 11a and the upper surface of the p-side semiconductor layer 13, and a side surface of the semiconductor layer 10 that is continuous with the second n-side exposed surface 11b and the upper surface of the p-side semiconductor layer 13.

[0042] The step of preparing the laminate 101 can be performed by purchasing the laminate 101 shown in Fig. 1F. Alternatively, the step of preparing the laminate 101 may include the following steps described with reference to Figs. 1A to 1E.

[0043] The process of preparing the laminate 101 may include the steps of preparing a wafer W, removing the first substrate 91 of the wafer W to expose the first surface 10a of the semiconductor layer 10, forming a light-transmitting layer 20 on the first surface 10a, and bonding a wavelength conversion layer 30 to the light-transmitting layer 20.

[0044] 1A, in the step of preparing a wafer W, the wafer W has a first substrate 91 and a semiconductor layer 10 disposed on the first substrate 91. The wafer W may further have the conductive layer 40, the first insulating film 51, and the second insulating film 52 described above.

[0045] The first substrate 91 is, for example, a substrate used for forming the semiconductor layer 10 by a metal organic chemical vapor deposition (MOCVD) method. As the first substrate 91, for example, a sapphire substrate can be used.

[0046] In the step of removing the first substrate 91 of the wafer W, the first substrate 91 can be removed by, for example, a laser lift-off method. When the first substrate 91 is removed from the wafer W, the first surface 10a of the semiconductor layer 10 is exposed as shown in FIG. 1C.

[0047] 1E, a light-transmitting layer 20 is formed on the exposed first surface 10a. The light-transmitting layer 20 can be formed on the first surface 10a by, for example, a chemical vapor deposition (CVD) method.

[0048] 1F, the wavelength conversion layer 30 is bonded to the light transmissive layer 20 to prepare the laminate 101. The light transmissive layer 20 and the wavelength conversion layer 30 can be directly bonded together by applying pressure and heat.

[0049] 1B, the step of preparing the laminate 101 preferably includes a step of bonding a surface side of the wafer W opposite to the first substrate 91 to a second substrate 92. After bonding the wafer W to the second substrate 92, the first substrate 91 is removed. In this way, even if the first substrate 91 is removed, it is easy to form the light transmitting layer 20 and bond the wavelength conversion layer 30 in a state in which the semiconductor layer 10 is stably supported by the second substrate 92.

[0050] The second substrate 92 may be made of the same material as the first substrate 91. The surface of the wafer W opposite to the first substrate 91 is bonded to the second substrate 92 by a bonding member 93. The bonding member 93 may be made of a material such as resin.

[0051] The step of preparing the laminate preferably further includes a step of removing the first substrate 91 to expose the first surface 10a of the semiconductor layer 10, and then roughening the first surface 10a as shown in Fig. 1D. This can improve the light extraction efficiency from the first surface 10a.

[0052] For example, the first surface 10a can be roughened by wet etching using an alkaline solution such as TMAH (tetramethylammonium hydroxide) or dry etching using a gas containing chlorine.

[0053] When the first surface 10a is roughened, the light-transmitting layer 20 is formed on the roughened first surface 10a as shown in FIG. 1E. The direct bonding between the light-transmitting layer 20 and the wavelength conversion layer 30 requires flatness at the bonding surface. When the light-transmitting layer 20 is formed on the roughened first surface 10a, the step of preparing the laminate 101 preferably further includes a step of polishing the surface of the light-transmitting layer 20 to which the wavelength conversion layer 30 is bonded by chemical mechanical polishing (CMP). This increases the flatness of the surface of the light-transmitting layer 20 to which the wavelength conversion layer 30 is bonded, thereby increasing the bonding strength between the light-transmitting layer 20 and the wavelength conversion layer 30. The surface roughness (arithmetic mean roughness) of the surface of the light-transmitting layer 20 to which the wavelength conversion layer 30 is bonded is preferably 0.2 nm or less, for example.

[0054] After the wavelength conversion layer 30 is bonded to the light transmitting layer 20, the second substrate 92 is removed. For example, the interface between the second substrate 92 and the bonding member 93 is irradiated with laser light to evaporate the bonding member 93 located at the interface, thereby allowing the second substrate 92 to be peeled off from the bonding member 93. Thereafter, the bonding member 93 can be removed from the semiconductor layer 10 by dissolving it using, for example, a chemical solution.

[0055] The thickness of the portion of the semiconductor layer 10 removed in the step of separating the semiconductor layer 10 into the plurality of semiconductor portions 60 is preferably greater than the thickness of the light-transmitting layer 20. This makes it possible to prevent cracks from occurring in the semiconductor layer 10 due to internal stress of the light-transmitting layer 20 formed on the first surface 10a of the semiconductor layer 10.

[0056] The method for manufacturing the light emitting device according to the first embodiment may further include a step of forming a p-side electrode 71 and an n-side electrode 72 on the second insulating film 52, as shown in FIG. 1H.

[0057] The p-side electrode 71 contacts the upper surface of the conductive layer 40 in an opening formed in the second insulating film 52 and an opening formed in the first insulating film 51. The p-side electrode 71 is electrically connected to the p-side semiconductor layer 13 via the conductive layer 40. The n-side electrode 72 contacts the first n-side exposed surface 11a and is electrically connected to the first n-side semiconductor layer 11.

[0058] Metal materials such as Ag, Ni, Ti, Pt, Al, Ru, Rh, Au, or alloys thereof can be used as the material of the p-side electrode 71 and the n-side electrode 72. The p-side electrode 71 and the n-side electrode 72 may be a single layer of the above metal material, or may have a laminated structure having multiple metal layers.

[0059] The method for manufacturing the light emitting device according to the first embodiment may further include a step of forming a p-side external connection electrode 81 and an n-side external connection electrode 82, as shown in FIG. 1I.

[0060] The p-side external connection electrode 81 is formed on the p-side electrode 71 and electrically connected to the p-side electrode 71. The n-side external connection electrode 82 is formed on the n-side electrode 72 and electrically connected to the n-side electrode 72. The thicknesses of the p-side external connection electrode 81 and the n-side external connection electrode 82 are greater than the thicknesses of the p-side electrode 71 and the n-side electrode 72.

[0061] Metal materials such as Ag, Ni, Ti, Pt, Al, Ru, Rh, Au, or alloys thereof can be used as the material of the p-side external connection electrode 81 and the n-side external connection electrode 82. The p-side external connection electrode 81 and the n-side external connection electrode 82 may be a single layer of the above metal material, or may have a laminated structure having multiple metal layers.

[0062] The steps of forming the p-side electrode 71, the n-side electrode 72, the p-side external connection electrode 81, and the n-side external connection electrode 82 may be performed at any timing before the wavelength conversion layer 30 is fractured. When a resist mask is used in the step of etching the semiconductor layer 10 to remove a portion thereof, it is preferable to place the resist mask on the laminate 101 before the p-side external connection electrode 81 and the n-side external connection electrode 82 are formed. This allows the resist mask to be placed on the laminate 101 in a state where the thickness is thinner than that of the laminate 101 in a state where the p-side external connection electrode 81 and the n-side external connection electrode 82 are formed, and this makes it easier to improve the patterning accuracy of the resist mask by exposure and development.

[0063] [Second embodiment] A method for manufacturing the light emitting device 2 according to the second embodiment will be described with reference to FIGS. 2A and 2B.

[0064] 2A , in the step of separating the semiconductor layer 10 into a plurality of semiconductor portions 60, the light transmitting layer 20 is exposed from the semiconductor layer 10 at a portion 10A where a part of the semiconductor layer 10 has been removed. The light transmitting layer 20 remains on the second surface 30a of the wavelength conversion layer 30 below the portion 10A where a part of the semiconductor layer 10 has been removed. The light transmitting layer 20 can protect the wavelength conversion layer 30 from etching, and can prevent deterioration of the wavelength conversion layer 30.

[0065] Then, in the process of dividing the laminate 101 into a plurality of light emitting devices 2, the light transmissive layer 20 and the wavelength conversion layer 30 are cut along the portion 10A where a part of the semiconductor layer 10 has been removed. The light transmissive layer 20 is also cut in association with the cutting of the wavelength conversion layer 30 described above.

[0066] 2B, in the individualized light-emitting device 2, a light-transmitting layer 20 is disposed on an outer circumferential portion 30a1 of the second surface 30a of the wavelength conversion layer 30. This allows light from the semiconductor layer 10 to be guided to the entire wavelength conversion layer 30, resulting in a light-emitting device 2 with reduced luminance unevenness in the light emitted from the wavelength conversion layer 30.

[0067] [Third embodiment] A method for manufacturing the light emitting device 3 according to the third embodiment will be described with reference to FIGS. 3A to 3D.

[0068] 3A , in the step of preparing the stack 102, the light-transmitting layer 120 has a first light-transmitting layer 121 disposed on the wavelength conversion layer 30 and a second light-transmitting layer 122 disposed on the first light-transmitting layer 121. The second light-transmitting layer 122 is located between the first light-transmitting layer 121 and the semiconductor layer 10. The second light-transmitting layer 122 can be made of the same material as the light-transmitting layer 20 in the first and second embodiments.

[0069] As shown in Fig. 3B, which is an enlarged cross-sectional view of part A in Fig. 3A, the first translucent layer 121 has a plurality of dielectric layers. The plurality of dielectric layers include first dielectric layers 121a and second dielectric layers 121b alternately stacked between the wavelength conversion layer 30 and the second translucent layer 122. The number of stacked pairs of the first dielectric layers 121a and the second dielectric layers 121b is not limited to the number of pairs shown in Fig. 3B.

[0070] The first light transmissive layer 121 having multiple dielectric layers has the property of easily transmitting light in the wavelength range of light emitted by the active layer 12 and easily reflecting light in the wavelength range of light wavelength-converted by the wavelength conversion layer 30. The first light transmissive layer 121 having such a property can improve the light extraction efficiency from the third surface 30b of the wavelength conversion layer 30 in the light emitting device 3.

[0071] For example, one of the first dielectric layer 121a and the second dielectric layer 121b may be made of niobium oxide (Nb2O5), and the other may be made of silicon oxide (SiO2).

[0072] 3C , in the step of separating the semiconductor layer 10 into a plurality of semiconductor sections 60, the first translucent layer 121 is exposed from the semiconductor layer 10 and the second translucent layer 122 in a portion 10A where a part of the semiconductor layer 10 has been removed. The first translucent layer 121 remains on the second surface 30a of the wavelength conversion layer 30 below the portion 10A where a part of the semiconductor layer 10 has been removed. The first translucent layer 121 can protect the wavelength conversion layer 30 from etching, and can prevent deterioration of the wavelength conversion layer 30.

[0073] Then, in the process of dividing the laminate 102 into a plurality of light emitting devices 3, the first light transmissive layer 121 and the wavelength conversion layer 30 are cut along the portion 10A where a part of the semiconductor layer 10 has been removed. The first light transmissive layer 121 is also cut in conjunction with the cutting of the wavelength conversion layer 30 described above.

[0074] According to the third embodiment, in the individual light emitting device 3, the first light transmissive layer 121 is disposed on the outer periphery 30a1 of the second surface 30a of the wavelength conversion layer 30, as shown in FIG. 3D.

[0075] In the step of preparing the laminate 102 of the third embodiment, as shown in FIG. 3B, it is preferable to make the thickness of the dielectric layer (second dielectric layer 121b1) in contact with the second light-transmitting layer 122 among the plurality of dielectric layers of the first translucent layer 121 thicker than the thickness of each of the other dielectric layers other than the dielectric layer (second dielectric layer 121b1) in contact with the second light-transmitting layer 122 among the plurality of dielectric layers. This makes it easier to leave a predetermined number of pairs of the first dielectric layer 121a and the second dielectric layer 121b on the second surface 30a of the wavelength conversion layer 30 below the portion 10A from which a part of the semiconductor layer 10 has been removed, in the etching step of separating the semiconductor layer 10 into the plurality of semiconductor portions 60. In other words, it makes it easier to leave a predetermined number of pairs of the first dielectric layer 121a and the second dielectric layer 121b on the outer circumferential portion 30a1 of the second surface 30a of the wavelength conversion layer 30 in the individualized light-emitting device 3. This allows the light that has been wavelength-converted in the wavelength conversion layer 30 and travels toward the outer circumferential portion 30a1 to be reflected by the first light transmitting layer 121, thereby improving the light extraction efficiency from the third surface 30b.

[0076] An embodiment of the present invention may include the following method for manufacturing a light emitting device.

[0077] [Section 1] providing a laminate including a wavelength conversion layer, a light transmitting layer disposed on the wavelength conversion layer, and a semiconductor layer disposed on the light transmitting layer; removing portions of the semiconductor layer to separate the semiconductor layer into a plurality of semiconductor portions on the wavelength conversion layer; cutting the wavelength conversion layer along the portion where the semiconductor layer is partially removed to separate the laminate into a plurality of light emitting devices; A method for manufacturing a light emitting device comprising the steps of: [Section 2] 2. The method for producing a light emitting device according to item 1, wherein in the step of dividing the semiconductor layer into the plurality of semiconductor portions, the portions of the semiconductor layer are removed by etching. [Section 3] 3. The method for manufacturing a light-emitting device according to item 1 or 2, wherein in the step of dividing the semiconductor layer into the plurality of semiconductor parts, a part of the light-transmitting layer is also removed, and the wavelength conversion layer is exposed from the semiconductor layer and the light-transmitting layer in the part where the part of the semiconductor layer is removed. [Section 4] In the step of dividing the semiconductor layer into a plurality of the semiconductor portions, the light transmitting layer is exposed from the semiconductor layer in a portion where a part of the semiconductor layer is removed, 3. The method for manufacturing a light-emitting device according to item 1 or 2, wherein in the step of dividing the laminate into a plurality of light-emitting devices, the light-transmitting layer and the wavelength conversion layer are cleaved along a portion where a part of the semiconductor layer is removed. [Section 5] In the step of preparing the laminate, the light-transmitting layer includes a first light-transmitting layer disposed on the wavelength conversion layer and having a plurality of dielectric layers, and a second light-transmitting layer disposed on the first light-transmitting layer; In the step of dividing the semiconductor layer into the plurality of semiconductor portions, the first light transmitting layer is exposed from the semiconductor layer and the second light transmitting layer in a portion where a part of the semiconductor layer is removed; 3. The method for manufacturing a light emitting device according to item 1 or 2, wherein in the step of singulating the laminate into the plurality of light emitting devices, the first light transmissive layer and the wavelength conversion layer are fractured along a portion where a part of the semiconductor layer is removed. [Section 6] 6. The method for manufacturing a light emitting device according to item 5, wherein in the step of preparing the laminate, a thickness of a dielectric layer in contact with the second light transmitting layer among the plurality of dielectric layers is made thicker than a thickness of each of the other dielectric layers among the plurality of dielectric layers other than the dielectric layer. [Section 7] 7. The method for manufacturing a light emitting device according to any one of items 1 to 6, wherein a thickness of the portion of the semiconductor layer removed in the step of dividing the semiconductor layer into a plurality of semiconductor portions is greater than a thickness of the light transmitting layer. [Section 8] The step of preparing the laminate includes: providing a wafer having a first substrate and the semiconductor layer disposed on the first substrate; removing the first substrate of the wafer to expose a first surface of the semiconductor layer; forming the light-transmitting layer on the first surface; bonding the wavelength conversion layer to the light transmitting layer; 8. The method for producing a light emitting device according to any one of items 1 to 7, comprising: [Section 9] The step of preparing the laminate further includes a step of bonding a surface side of the wafer opposite to the first substrate to a second substrate, Item 9. The method for producing a light emitting device according to item 8, further comprising removing the first substrate after bonding the wafer and the second substrate. [Section 10] Item 10. The method for producing a light emitting device according to item 8 or 9, wherein the step of preparing the laminate further comprises a step of roughening the first surface of the semiconductor layer. [Section 11] In the step of forming the light-transmitting layer, the light-transmitting layer is formed on the roughened first surface, Item 11. The method for producing a light emitting device according to item 10, wherein the step of preparing the laminate further comprises a step of polishing the surface of the light transmitting layer to which the wavelength conversion layer is bonded by chemical mechanical polishing.

[0078] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention. In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modified examples and examples of modifications, and these modified examples and examples of modifications also belong to the scope of the present invention. [Explanation of symbols]

[0079] Reference Signs List 1 to 3: light emitting device, 10: semiconductor layer, 10a: first surface, 11: n-side semiconductor layer, 11a: first n-side exposed surface, 11b: second n-side exposed surface, 12: active layer, 13: p-side semiconductor layer, 20: light transmitting layer, 30: wavelength conversion layer, 30a: second surface, 30b: third surface, 30c: groove, 40: conductive layer, 51: first insulating film, 52: second insulating film, 60: semiconductor portion, 71: p-side electrode, 72...n-side electrode, 81...p-side external connection electrode, 82...n-side external connection electrode, 91...first substrate, 92...second substrate, 93...joining member, 101-102...laminated body, 120...light-transmitting layer, 121...first light-transmitting layer, 121a...first dielectric layer, 121b (121b1)...second dielectric layer, 122...second light-transmitting layer, 200...modified portion, 300...pressing member, W...wafer, L...laser light

Claims

1. providing a laminate including a wavelength conversion layer, a light transmitting layer disposed on the wavelength conversion layer, and a semiconductor layer disposed on the light transmitting layer; removing portions of the semiconductor layer to separate the semiconductor layer into a plurality of semiconductor portions on the wavelength conversion layer; cutting the wavelength conversion layer along the portion where the semiconductor layer is partially removed to separate the laminate into a plurality of light emitting devices; A method for manufacturing a light emitting device comprising the steps of:

2. The method for manufacturing a light emitting device according to claim 1 , wherein in the step of dividing the semiconductor layer into the plurality of semiconductor portions, the portion of the semiconductor layer is removed by etching.

3. 3. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of separating the semiconductor layer into the plurality of semiconductor parts, a part of the light-transmitting layer is also removed, and the wavelength conversion layer is exposed from the semiconductor layer and the light-transmitting layer in the part where the part of the semiconductor layer is removed.

4. In the step of dividing the semiconductor layer into a plurality of the semiconductor portions, the light transmitting layer is exposed from the semiconductor layer in a portion where a part of the semiconductor layer is removed, 3 . The method for manufacturing a light emitting device according to claim 1 , wherein in the step of dividing the laminate into a plurality of light emitting devices, the light transmitting layer and the wavelength conversion layer are cut along a portion where the semiconductor layer is partially removed.

5. In the step of preparing the laminate, the light-transmitting layer includes a first light-transmitting layer disposed on the wavelength conversion layer and having a plurality of dielectric layers, and a second light-transmitting layer disposed on the first light-transmitting layer; In the step of dividing the semiconductor layer into the plurality of semiconductor portions, the first light transmitting layer is exposed from the semiconductor layer and the second light transmitting layer in a portion where a part of the semiconductor layer is removed; 3. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of singulating the laminate into a plurality of the light-emitting devices, the first light-transmitting layer and the wavelength conversion layer are fractured along a portion where a part of the semiconductor layer has been removed.

6. 6. The method for manufacturing a light emitting device according to claim 5, wherein in the step of preparing the laminate, a thickness of a dielectric layer among the plurality of dielectric layers that is in contact with the second light transmitting layer is made thicker than a thickness of each of the other dielectric layers among the plurality of dielectric layers other than the dielectric layer.

7. The method for manufacturing a light emitting device according to claim 1 , wherein a thickness of the portion of the semiconductor layer removed in the step of dividing the semiconductor layer into the plurality of semiconductor portions is greater than a thickness of the light transmitting layer.

8. The step of preparing the laminate includes: providing a wafer having a first substrate and the semiconductor layer disposed on the first substrate; removing the first substrate of the wafer to expose a first surface of the semiconductor layer; forming the light-transmitting layer on the first surface; bonding the wavelength conversion layer to the light transmitting layer; The method for manufacturing a light emitting device according to claim 1 , further comprising the steps of:

9. The step of preparing the laminate further includes a step of bonding a surface side of the wafer opposite to the first substrate to a second substrate, The method for manufacturing a light emitting device according to claim 8 , further comprising the step of removing the first substrate after bonding the wafer and the second substrate.

10. The method for manufacturing a light emitting device according to claim 8 , wherein the step of preparing the laminate further comprises the step of roughening the first surface of the semiconductor layer.

11. In the step of forming the light-transmitting layer, the light-transmitting layer is formed on the roughened first surface, The method for manufacturing a light emitting device according to claim 10 , wherein the step of preparing the laminate further comprises the step of polishing, by chemical mechanical polishing, a surface of the light transmitting layer to which the wavelength conversion layer is bonded.

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