Electrical resistance element on a substrate having a thin uniform barrier layer

Abstract

The electrical resistive element includes an electrically insulating carrier (13), at least one resistive layer (15) on the carrier, and at least one electrical terminal (17) formed on the carrier and connected to the resistive layer, the resistive layer having a surface structure (21) along its surface on a side facing away from the carrier, and is covered by a barrier layer (23), the barrier layer (23) comprising an inorganic material, the barrier layer (23) replicating the surface structure of the resistive layer throughout and with a uniform thickness (D).

Description

[Technical field]

[0001] The present invention relates to an electrically resistive component comprising an electrically insulating carrier, at least one resistive layer on the carrier, and at least one electrical connector formed in the carrier and connected to the resistive layer, the resistive layer further having a surface structure along its surface on the side facing away from the carrier and being covered by a barrier layer. [Background technology]

[0002] Such electrical resistance components can be used in numerous applications, for example to be able to intentionally limit the current flow between two further electrical components of an electrical circuit. Moreover, such electrical resistance components are frequently used in microchips, where an ever-increasing reduction in the size of components is targeted, which may require in particular a flat or thin design of the components used. At the same time, however, high precision is usually required for the electrical resistance components, such that a narrow tolerance range, for example between 1% and 0.01%, may be predefined. Moreover, to ensure reliable use of the electrical resistance components under load, a low temperature coefficient of between 1 ppm / K and 50 ppm / K may be required for the resistance components. Moreover, the desired long-term stability of the electrical resistance components requires protection against environmental influences, and for example a requirement of a maximum change of 0.1% to 0.5% after 1000 hours of load at approximately 10% nominal load, 85% air humidity and 85° C. may be met.

[0003] However, especially in small and / or flat electrical resistance components, the problem arises that the resistance layer, due to its relatively small layer thickness, may have a high sensitivity with respect to corrosion (particularly by anodization) upon simultaneous application of a voltage. This problem can generally be countered in that the resistance layer is covered by a barrier layer on the side facing away from the carrier in order to protect it against the effects of moisture. However, the application of such a barrier layer requires a gentle and therefore frequently complicated process, since the resistance layer cannot be altered or damaged by the process of application, so that the application of the barrier layer does not change the previously precisely set properties of the electrical resistance component (particularly the resistance value).

[0004] For example, one or more layers of organic compounds (e.g., epoxy or silicone resins) can be used as barrier layers. However, sufficient protection against moisture in vapor form may not usually be provided by organic materials, and said moisture may pass through the organic barrier layer to contact the resistive layer, such that the organic barrier layer may only provide incomplete protection of the resistive layer.

[0005] Alternatively, the barrier layer for the electrical resistance component can be formed by inorganic materials in order to increase the protective effect against vaporous moisture. For this purpose, the barrier layer can be applied to the resistance layer, for example, by a sputtering process, but for that purpose specific materials are usually required, the production of which is relatively complex and / or expensive. Moreover, such inorganic barrier layers can only form a hermetic sealing of the resistance layer at a relatively high layer thickness, and the surface of the resistance layer can be covered by the sputtering process in particular in a non-conformal manner, so that recesses into the barrier layer or microscopic hollow spaces between the resistance layer and the barrier layer can remain due to the surface structure of the resistance layer. On the one hand, the already mentioned undesirably large layer thickness of the barrier layer is required to cover these hollow spaces, but on the other hand, the hollow spaces can also impair the generally required protective effect of the resistance layer by the barrier layer. Summary of the Invention

[0006] It is an object of the present invention to provide an electrical resistance component which can be flat or thinned and which has high stability against environmental influences and in particular against moisture influences.

[0007] This object is met by an electrical resistance component having the features of claim 1, in particular in that the barrier layer comprises an inorganic material and in that the barrier layer reproduces the surface structure of the resistance layer continuously and with uniform thickness.

[0008] A conformal covering of the resistive layer can in particular be achieved due to covering the resistive layer with a continuous barrier layer of uniform thickness which reproduces the surface structure of the resistive layer along its surface. In this regard, all positions of the surface of the resistive layer on the side of the resistive layer facing away from the carrier can be in direct contact with the barrier layer. However, a continuous direct contact of the barrier layer with the resistive layer or with the current conducting layer of the resistive layer is not absolutely necessary; rather, it is important that the barrier layer forms a continuous barrier above the resistive layer.

[0009] The reproduction of the surface structure of the resistive layer along the surface of the resistive layer means that not only the course of the transition between the carrier and the resistive layer (for example a step-like transition between the absence and presence of the resistive layer on the carrier) is reproduced, but rather the surface structure in those areas where the resistive layer is present is reproduced by the barrier layer with a uniform thickness. Gaps in the barrier layer can thereby be particularly avoided, so that a reliable, gas-tight sealing of the resistive layer can already be achieved with small layer thicknesses. Due to the continuous covering and reproduction of the resistive layer, the resistive layer is not only partially covered by the barrier layer, but is covered over its entire surface by the barrier layer, in particular in order to seal the entire surface of the resistive layer against the penetration of moisture.

[0010] The electrical resistance component can be configured, for example, as a thin-film resistance component (also designated as a thin-layer resistance component). In such a resistance component, the resistance layer can be applied to the carrier, for example by a sputtering process, so that the resistance layer can be formed on the carrier as a thin film (in particular a metal thin film). The resistance layer of the thin-film resistance component can have a layer thickness that is smaller than the surface roughness of the carrier. For example, the resistance layer of an electrical resistance component configured as a thin-film resistance component can have a layer thickness in the range of 50 nanometers (nm) to 500 nanometers (nm). In contrast thereto, carriers typically used for such electrical resistance components can have a surface with a roughness of, for example, 1 micrometer (μm) to 3 micrometers (μm), such that the surface structure of the resistance layer on the side facing away from the carrier can be determined primarily by the surface roughness of the carrier.

[0011] The roughness of the surface structure of the resistive layer and / or of another surface mentioned in connection with the present invention can in particular be determined by a fifth or sixth order form deviation according to DIN 4760.

[0012] Alternatively to the configuration as a thin-film resistive component, the resistive component can also be configured, for example, as a thick-film resistive component. In the case of such resistive components, the resistive layer can in particular be applied or baked onto the carrier in the form of a paste (for example a glass paste) (metal or metal oxide particles are included therein), in particular application by screen printing can be provided. Such a resistive layer can have a layer thickness of at most approximately 10 μm, such that in the case of an resistive component configured as a thick-film resistive component, the layer thickness of the resistive layer can exceed the surface roughness of the carrier, which can again be in the range of 1 μm to 3 μm. However, in such resistive components, the resistive layer can itself have a roughness that can ultimately determine the surface structure of the resistive layer on the side facing away from the carrier. For example, the surface roughness of a resistive layer formed as a thick-film resistive layer can also be in the range of approximately 0.1 μm to 3 μm.

[0013] The resistance value of an electrical resistance component, which is configured as a thick-film resistive component, can be determined in particular by the density of metal or metal oxide particles in the paste applied to the carrier as a thick-film resistive layer. However, provision can additionally be made to provide such a resistive layer with trimming structures after applying the resistive layer to the carrier, for example by lithographic processing or by processing with a laser beam, in order to define the precise resistance value of the electrical resistance component. In contrast, in the case of an electrical resistance component configured as a thin-film resistive component, the resistive layer can initially form a thin closed metal film, as already explained, but which can be provided with trimming structures in order to precisely set the desired resistance value.

[0014] Regardless of whether the electrical resistive component is configured as a thin-film resistive component or as a thick-film resistive component, the resistive layer may further comprise an electrically conductive material and, if applicable, a non-conductive material. Moreover, the resistive layer may comprise a current conducting layer, on which an additional, but non-conforming, in particular electrically non-conductive, material layer may in particular be applied partially as part of the resistive layer. For example, such an additional material layer of the resistive layer may serve to stabilize the current conducting part of the resistive layer. Such a material layer may in particular comprise an inorganic material and may be applied, for example by sputtering, to the current conducting layer of the resistive layer, such that the material layer may in particular collect at points of the surface of the current conducting layer that are raised relative to the carrier, while the recesses may be covered by a material layer of smaller thickness or may remain uncovered by the material layer. Such an additional material layer of the resistive layer may have a thickness, in the section in which the additional material layer is present, that is significantly less than the thickness of the current conducting layer of the resistive layer and / or that is approximately equal to or less than the thickness of the barrier layer.

[0015] In this respect, such a material layer of the resistive layer (which is an additional material layer to the current conducting layer that actually defines the resistance value of the electrical resistance component) can possibly at least partially influence the surface structure of the resistive layer on the side facing away from the carrier. Thus, in such a resistive layer, the barrier layer (which reproduces the surface structure of the resistive layer) can be partially in contact with the current conducting layer and partially in contact with the additional material layer. If applicable, upon complete covering of the current conducting layer by an additional, but non-conforming, material layer, the barrier layer can also be in contact only with the additional material layer and not with the current conducting layer of the resistive layer. However, such a material layer as part of the resistive layer differs from the barrier layer, in particular in that the additional material layer does not cover the current conducting layer of the resistive layer in a conforming manner, i.e. does not cover it with a uniform thickness and / or does not cover said current conducting layer continuously. However, such an additional material layer is not absolutely necessary, rather the resistive layer can also be formed by a current conducting layer directly covered by a barrier layer.

[0016] Since the resistive layer has a surface structure along its surface, the surface structure can determine, in particular, the microscopic roughness of the surface of the resistive layer. For example, a resistive layer (in particular a resistive layer of a thin-film resistive component) can be applied to an insulating carrier by physical vapor deposition (for example a sputtering process). Such a resistive layer can have a thickness of 50 nanometers to 500 nanometers, while the surface roughness of the carrier can, however, be in the range of approximately 0.1 μm to 3 μm. In this respect, the surface roughness of the resistive layer in a thin-film resistive component can be substantially determined by the surface roughness of the carrier, such that the surface structure of the resistive layer can mainly follow the roughness of the carrier. In the case of an electrical resistive component configured as a thick-film resistive component, the thickness of the resistive layer can, in contrast, exceed the surface roughness of the carrier, such that in such a resistive component the surface structure of the resistive layer on the side facing away from the carrier can be determined not by the already compensated roughness of the carrier's surface, but by the surface roughness of the resistive layer itself. This roughness may be in the range of approximately 0.1 μm to 3 μm due to the application of such a thick film resistive layer (eg, by screen printing).

[0017] In particular, in the configuration of the electrical resistance component as a thin-film resistance component, the resistance layer can further have gaps that can be created by a shadowing effect on the application of the resistance to the carrier. For example, such a resistance layer can be applied to the carrier by a directed process (e.g. a sputtering process). The carrier can have overshadowed sections, which can be covered by further sections of the carrier and which can be located in its "shadow" with respect to the direction along which the resistance layer is applied. In such a case, the material used to form the resistance layer can possibly not reach (or not reach completely) the overshadowed sections, such that the surface of the carrier in the overshadowed sections is not covered by the resistance layer, but the latter has gaps or "pinholes". Since the barrier layer is applied continuously and reproduces the surface structure of the resistance layer with a constant thickness, such gaps in the resistance layer (i.e. the carrier exposed in the area of ​​the gaps) can also be uniformly covered by the barrier layer, which is "pinhole-free" or formed without gaps. Any edges of such gaps in the resistive layer can thereby also be covered by the barrier layer, so that the edges can likewise be protected from contact with moisture. In the gaps in the resistive layer, the barrier layer can in particular be applied directly to the surface of the carrier.

[0018] The barrier layer can follow the surface structure of the resistive layer such that the surface roughness of the resistive layer can determine the roughness of the surface of the barrier layer on the side facing away from the resistive layer. The surface structure is therefore in particular a structure on the surface of the resistive layer itself and not larger structures or interruptions of the resistive layer which may be formed, for example by lithographic processing or processing with a laser beam, after application of the resistive layer to the carrier, for example in order to trim the resistive layer to a particular resistance value, in particular in the case of electrical resistive components configured as thick-film resistive components.

[0019] The thickness of the barrier layer can correspond to the distance between the surface of the barrier layer on the side facing away from the resistive layer and the surface of the resistive layer on the side facing away from the carrier, which distance can be determined at each location of the surface of the resistive layer, in particular along the normal of the tangent expressing the curvature of the surface structure of the resistive layer at each location of the surface of the resistive layer. The "thickness" of the barrier layer can therefore be different from the "height" of the barrier layer, in particular in an inclined course, and the barrier layer can also have a surface structure on the side facing away from the resistive layer and can be non-planar. The surface structure of the resistive layer is therefore substantially reproduced rather than compensated or covered by the barrier layer.

[0020] Since the barrier layer reproduces the surface structure of the resistive layer with a uniform thickness, the surface structure of the barrier layer can follow the surface structure of the resistive layer along its surface on the side facing away from the resistive layer. The three-dimensional course of the surface structure of the barrier layer on the side facing away from the resistive layer can thus substantially reflect the three-dimensional course of the surface structure of the resistive layer on the side facing away from the carrier, and the distance between the surface of the resistive layer on the side facing away from the carrier and the surface of the barrier layer on the side facing away from the resistive layer along the respective normals of the surfaces of the resistive layer can always correspond to the thickness of the barrier layer. Conversely, the surface structure of the barrier layer on the side facing the resistive layer can, so to speak, form a relief of the surface structure of the resistive layer on the side facing away from the carrier. Thus, the three-dimensional course of the surface structure of the resistive layer along its surface on the side facing away from the carrier and the three-dimensional course of the surface structure of the barrier layer on the side facing the resistive layer can in particular correspond to each other, such that the surface of the resistive layer on the side facing away from the carrier can be in direct contact with the barrier layer at all positions.

[0021] Due to the reproduction of the surface structure of the resistive layer, and in particular due to a sufficiently small thickness of the barrier layer, the surface structure of the barrier layer on the side facing away from the resistive layer can also substantially correspond to the surface structure of the resistive layer, except for the displacement or homogenization due to the thickness of the barrier layer. The surface of the barrier layer can in particular be displaced by the thickness of the barrier layer relative to the surface of the resistive layer, such that, for example, recesses of the surface structure of the resistive layer (which have a specific width or a specific distance between the mutually opposite boundaries) can be reproduced as recesses in the surface structure of the barrier layer on the side facing away from the resistive layer, the width of said recesses being reduced, for example, by approximately twice the thickness of the barrier layer relative to the width of the recesses in the surface structure of the resistive layer. In contrast, due to a uniform coverage of the resistive layer, the respective depths of such recesses in the surface structure of the resistive layer on the side facing away from the carrier and the respective depths of such recesses in the surface structure of the barrier layer on the side facing away from the resistive layer can correspond to each other.

[0022] Thus, the roughness of the surface structure of the barrier layer on its side facing away from the resistive layer can be similar to the roughness of the surface structure of the resistive layer, but the roughness of the surface structure of the barrier layer may be somewhat smaller than the roughness of the surface structure of the resistive layer due to a particular homogenization of the covered surface structure of the resistive layer.

[0023] Such reproduction of the surface structure of the resistive layer, despite the small layer thickness, in particular allows a tight seal between the resistive layer and the barrier layer, reliably protecting the resistive layer against corrosion and the resulting changes in the electrical properties of the electrical resistance component (e.g. of an electrical resistor). Microscopic depressions and hollow spaces in the surface structure of the resistive layer or gaps in the resistive layer can in particular also be precisely covered or lined (e.g. not just covered) by the barrier layer, such that remaining of such hollow spaces between the resistive layer and the barrier layer can be avoided. The barrier layer can in particular cover the surface of the resistive layer completely and "pinhole-free", even with respect to the presence of such hollow spaces or gaps in the surface of the resistive layer.

[0024] However, in the case where the barrier layer reproduces the surface structure of the resistance layer, it is also possible that the recesses or hollow spaces in the surface structure of the resistance layer have a width smaller than twice the thickness of the barrier layer, such that such microscopic recesses and / or hollow spaces can, if necessary, be completely filled and closed by the barrier layer. In the region of such filled hollow spaces, but especially only in the region of such filled hollow spaces, the thickness of the barrier layer can also correspond, starting from one side of the recess or hollow space in the direction of the other side of the recess of the hollow space, and thus, as the case may be, to the distance of the two sides of the recess or hollow space from each other. Moreover, in such narrow hollow spaces or recesses, the thickness of the barrier layer can correspond, as the case may be, to the depth of the recess or hollow space, seen from the lowest point of the recess or hollow space. However, a covering of the entire resistance layer by a barrier layer of uniform thickness is finally present here too, since these deviations are not determined by the barrier layer itself, but result from a specific structure of the surface of the resistance layer in such regions.

[0025] Due to the design of the barrier layer with inorganic material, the resistive layer can be reliably protected against the effects of moisture in the form of vapor, which can penetrate conventional organic barrier layers. Such a conformal barrier layer with inorganic material does not in fact have to be realized by sputtering, as initially described (which is typical for electrical resistive components, during which a hollow space remains between the resistive layer and the barrier layer), but rather the application of a conformal inorganic barrier layer by atomic layer deposition is possible, for example.

[0026] In such a method of applying a barrier layer by atomic layer deposition, the resistive layer can, for example, first be covered by chemical vapor deposition in a reaction chamber with a first reactant that reacts in a self-limiting manner with the surface of the resistive layer. This self-limiting reaction allows the surface of the resistive layer to be covered by at most one atomic layer of the first reactant so that a conformal layer can be formed. In a subsequent flushing or evacuation step, unreacted gases and any reaction products of the first reactant can be removed from the reaction chamber, such that only the layer formed by the reactant on the surface of the resistive layer remains. In a further step, a second reactant can then be introduced into the reaction chamber, which reacts in a self-limiting manner with the layer of the first reactant (that covers the resistive layer) and reactivates the layer formed by the first reactant due to the reaction of the first reactant. After a further flushing or evacuation step to remove the residues of the second reactant, the steps can be repeated as respective cycles of atomic layer deposition, and due to the self-limiting nature of the reaction, in each run, in particular at most one atomic layer can be applied to each previously prepared layer or in a first step to the resistive layer of the electrical component. This makes it possible to reproduce the surface structure of the resistive layer in each process step of the atomic layer deposition, such that a conformal covering and hermetic sealing of the resistive layer can already be realized at small layer thicknesses. In general, provision can also be made to use different materials in different cycles, so that the individual layers of the barrier layer applied by atomic layer deposition can be formed from different materials or different chemical compounds.

[0027] However, small differences in the thickness of the barrier layer may also occur, for example, in an atomic layer deposition process, when the respective process step is interrupted or when a flushing or evacuation step is started before the complete atomic layer is formed, leaving small defects. However, these defects can be directly compensated for in the subsequent steps, such that a complete hermetic sealing of the resistive layer can already be achieved from a barrier layer thickness of approximately 10 nanometers or approximately 20 nanometers. In general, the thickness of the barrier layer can be determined mainly by the number of cycles of atomic layer deposition performed. Moreover, a provision can be made to perform cycles of atomic layer deposition until the barrier layer has a thickness of approximately 50 nanometers to approximately 500 nanometers or until it has a thickness of approximately 100 nanometers, so that a reliable hermetic sealing can be achieved during an efficient process implementation. In general, a method of atomic layer deposition is described, for example, in US Pat. No. 4,058,430.

[0028] Further embodiments of the invention can be seen from the dependent claims, from the description and from the figures.

[0029] In some embodiments, the ratio between the minimum and maximum thickness of the barrier layer can be greater than 0.8, in particular greater than 0.9. The barrier layer can thus be formed in a conformal manner along the surface structure of the resistive layer, allowing for an accurate reproduction of the surface structure of the resistive layer without significant thickness differences, such that the surface structure of the surface of the barrier layer on the side facing away from the resistive layer can substantially reproduce the surface structure of the resistive layer on the side facing away from the carrier. As described, the thickness of the barrier layer can be determined in particular along the respective normals of the surface structure of the resistive layer at specific measurement points, and small thickness differences of the barrier layer can be caused, for example, by a small number of defects in the individual layers, said defects being created during atomic layer deposition for applying the barrier layer.

[0030] In some embodiments, the thickness of the barrier layer can be smaller than the roughness of the surface of the carrier and / or smaller than the roughness of the surface structure of the resistive layer. As already explained, in a thin-film resistive component, the thickness of the resistive layer can be smaller than the roughness of the surface of the carrier to which the resistive layer is applied. The surface structure of the resistive layer on the side facing away from the carrier can therefore be determined mainly by the roughness of the surface of the carrier and can ultimately have a comparable roughness, but which is slightly smaller than the surface of the carrier due to the thickness of the resistive layer. In such a case, the thickness of the barrier layer can therefore be smaller than the roughness of the surface of the carrier and the roughness of the surface structure of the resistive layer. In a thick-film resistive component, the resistive layer, in contrast, can have a thickness that exceeds the roughness of the surface of the carrier, such that the resistive layer can cover the roughness of the surface of the carrier, the surface texture of the resistive layer can be directly determined by its roughness, and the thickness of the barrier layer can be smaller than the roughness of the resistive layer. Regardless of the design of the resistive layer, however, the barrier layer is capable of uniformly replicating the surface structure of the resistive layer without completely homogenizing the roughness of the surface structure or completely filling the recesses.

[0031] The barrier layer can cover the resistive layer as a thin layer and nevertheless allow for hermetic sealing, so that due to such a barrier layer not only the roughness of the surface structure of the resistive layer can be covered or thus the depressions caused by the roughness can be compensated for, but also the roughness of the surface structure can be directly reproduced by the barrier layer, so that the surface of the resistive layer can be completely contacted by the barrier layer.

[0032] In some embodiments, the roughness of the surface structure of the barrier layer on its side facing away from the resistive layer can have a value in the range of 0.2 to 1.0 times the value of the roughness of the surface structure of the resistive layer. Thus, the barrier layer can have a uniform thickness with at most small deviations, such that the surface structure of the barrier layer on the side facing away from the resistive layer can be substantially predefined by the surface roughness of the resistive layer.

[0033] Moreover, in some embodiments, the roughness of the surface structure of the barrier layer on its side facing away from the resistive layer can be smaller than the roughness of the surface structure of the resistive layer. Due to the reproduction of the surface structure of the resistive layer, the barrier layer can in particular achieve a certain homogenization, but cannot completely eliminate the roughness of the surface structure of the resistive layer. In this respect, the surface structure of the barrier layer can also have a roughness on its side facing away from the resistive layer, said roughness being determined by the roughness of the surface structure of the resistive layer, but reduced with respect to the roughness of the surface structure of the resistive layer due to the coverage of the resistive layer.

[0034] In some embodiments, the surface structure of the resistive layer can form a recess, and the barrier layer can cover the recess continuously and with a uniform thickness. Such a recess can cover an overshadowed section of the surface of the resistive layer, in particular with respect to the surface normal of the overshadowed section, such that the surface normal of the overshadowed section intersects the recess. It is also possible for the barrier layer to cover the recess with a constant thickness (i.e., a constant thickness), so that such a recess does not result in a gap in the barrier layer. Rather, the barrier layer can be formed continuously and "pinhole-free" or without gaps. Coverage of the recess can be achieved, in particular, by applying the barrier layer by an atomic layer deposition process, while directional processes (e.g., sputtering processes) traditionally used to form the barrier layer can result in gaps in the barrier layer in such recesses due to shadowing effects.

[0035] In some embodiments, the surface structure of the resistive layer, alternatively or additionally to the recesses described above, can form open hollow spaces with wall sections, the wall sections of the respective hollow spaces being arranged opposite each other with respect to the respective hollow spaces. The surface normals of the wall sections of the respective hollow spaces can intersect each other, in particular at an acute angle. In such an embodiment, the barrier layer can cover the wall sections arranged opposite each other of the respective hollow spaces. Such open hollow spaces, unlike a mere depression in the surface of the resistive layer with a concave structure, can further form a depression, such that the normal of the surface of the resistive layer can intersect with the wall section of the hollow space or recess, in particular at the lowest point of such hollow space. The lowest point of the hollow space can be covered by a wall section or recess along this normal. The opening of such hollow spaces can be oriented, for example, upwards (i.e., away from the carrier), diagonally upwards or laterally.

[0036] The barrier layer can cover the wall sections of such hollow spaces, so that such hollow spaces can also be covered and / or lined by the barrier layer in a conformal manner. Thus, the barrier layer can not only close the openings of the hollow spaces, so that hollow spaces are created between the resistance layer and the barrier layer, but also the wall sections of the hollow spaces can be covered by the barrier layer. Thus, the surface of the barrier layer facing away from the resistance layer can also have hollow spaces with openings at the respective positions, which hollow spaces can in particular also have recesses in the surface of the barrier layer. However, if necessary, the barrier layer can completely fill hollow spaces or recesses in the surface structure of the resistance layer, the depth of which is less than the thickness of the barrier layer and / or the wall sections of which have a distance from each other that is less than twice the thickness of the barrier layer.

[0037] Moreover, in some embodiments, the resistive layer can extend along a plane of extent, and at least one of the wall sections of each hollow space of the resistive layer can adopt an angle of >90 degrees with respect to the plane of extent of the resistive layer.

[0038] At least one of the wall sections of the respective hollow space can thus form a recess with respect to the range plane, such that the surface normal of the at least one wall section can intersect the range plane of the resistance layer. The surface normal of the at least one wall section can intersect the range plane of the resistance layer, in particular along a direction pointing away from the wall section. The wall section can thus cover the lower and in particular the lowest point of the hollow space with respect to the surface normal of the range plane of the resistance layer. However, such wall sections of the hollow space, which, so to speak, overhang with respect to the range plane, can also be covered by a barrier layer having a uniform thickness corresponding to the other sections of the surface of the resistance layer, such that no hollow spaces are created between the wall section and the barrier layer, which could impair the protection of the resistance layer.

[0039] In some embodiments, the surface of the carrier facing the resistive layer can form at least one recess and the resistive layer can have gaps in the area of ​​the recess. Moreover, the barrier layer can cover the recess of the carrier and the resistive layer present in the environment of the gap continuously and with a uniform thickness. In such embodiments, the electrical resistive component can be configured in particular as a thin-film resistive component.

[0040] In particular, during application of the resistive layer by a directional process, recesses in the surface of the carrier may overshadow sections of the surface of the carrier with respect to the direction in which the material for forming the resistive layer is applied to the carrier, such that the material does not reach the overshadowed sections and recesses in the surface of the carrier. Thus, in these areas, gaps or "pinholes" of the resistive layer may be created in the surface of the carrier. In contrast thereto, a continuous barrier layer may also cover such gaps in the resistive layer, covering the recesses and / or overshadowed sections of the surface of the carrier with a constant thickness in the region of the gap. Thus, a continuous barrier layer may be "pinhole-free" or formed without gaps, even if the resistive layer has gaps. The carrier may also form a hollow space with wall sections, in particular arranged opposite each other, whose surface normals intersect at an acute angle, and the resistive layer may have a gap covered by the barrier layer with a constant thickness in at least one of the wall sections.

[0041] In some embodiments, the barrier layer can have a thickness of at most 1000 nanometers (nm). Alternatively or additionally, in some embodiments, the barrier layer can have a thickness of at least 5 nanometers (nm). The thickness of the barrier layer can be in a range between 20 nanometers (nm) and 500 nanometers (nm), or in a range between 100 nanometers (nm) and 500 nanometers (nm).

[0042] Such thin barrier layers can in particular also enable an overall thin design of the electrical resistance component. In this respect, in particular when applying a barrier layer by the process of atomic layer deposition, a barrier layer having a thickness of only 100 nm can already enable a completely hermetic sealing of the resistance layer to protect said resistance layer against the ingress of moisture and in particular against the influence of water vapor. Due to the further thickening to approximately 500 nm, the hermetic sealing can be further respected and the individual steps during the application of the barrier layer can be carried out in an accelerated manner, for example by not having to ensure that a complete layer without defects is produced in each process step in the process of atomic layer deposition.

[0043] In some embodiments, the barrier layer may include multiple atomic layers, which extend parallel to one another and reproduce the surface structure of the resistive layer. The barrier layer may in particular include multiple successive or approximately successive atomic layers arranged on top of one another. For example, each of the atomic layers may reproduce the surface structure of the resistive layer with a uniform thickness, and the individual atomic layers may in fact possibly have small-scale defects, which may be compensated for by the subsequent atomic layers. Each atomic layer may also have the characteristics described above in particular with respect to the barrier layer, for example covering with a constant thickness the wall sections of the hollow space, the recesses formed by the surface structure of the resistive layer, the recesses formed by the surface of the carrier, and / or the gaps of the resistive layer. The multiple atomic layers of the barrier layer may consist of the same material, or different atomic layers may be formed from different materials.

[0044] In embodiments with different materials, the barrier layer may have an arrangement of a plurality (e.g., at least 10) atomic layers of a first material A, stacked on top of one another, and above such an arrangement the barrier layer may have at least one further arrangement of a plurality (e.g., at least 10) atomic layers of a second material B, different from the first material A, stacked on top of one another. Optionally, above the further arrangement the barrier layer may further have at least one arrangement of a plurality (e.g., at least 10) atomic layers of a third material C, stacked on top of one another. Moreover, in some embodiments a repetition of such layer arrangements may be provided, such that the barrier layer may have a sequence of a plurality of different layer arrangements stacked on top of one another according to the scheme ABAB... or according to the scheme ABCABC....

[0045] In some embodiments, the barrier layer can have an amorphous structure. On the one hand, in a crystalline barrier layer, grain boundaries may occur due to lattice defects, at which regions of crystals of different orientation abut each other, but the amorphous structure of the barrier layer can allow a uniform and hermetic coating of the resistance layer. Thus, the barrier layer can be formed, in particular even in individual atomic layers, without cracks or interruptions that could impair reliable sealing of the resistance layer against environmental influences and in particular against moisture. For example, such an amorphous structure of the barrier layer can be achieved by atomic layer deposition.

[0046] Alternatively or additionally, in some embodiments, the barrier layer can have a semi-crystalline structure. The semi-crystalline structure can be formed by a plurality of small crystals that are connected to each other at the respective grain boundaries. Thus, in such a structure, crystallization can occur, in particular partially, but a continuous crystalline structure is not created. For example, the semi-crystalline structure can be created in the course of atomic layer deposition for applying the barrier layer, in that the respective reactions for forming the layers are carried out with a slight time delay, so that to form each layer, crystals (but not continuous crystals) can partially form and then abut each other at the grain boundaries.

[0047] In some embodiments, the barrier layer can be formed of multiple layers, as already mentioned. In atomic layer deposition, the individual layers can in particular be applied in multiple process steps and / or cycles, which can ultimately jointly form the barrier layer. The layers can in particular be multiple atomic layers, as already mentioned, which extend parallel to one another on top of one another.

[0048] In some embodiments, the barrier layer can have at least one layer with an amorphous structure. Alternatively or additionally, in some embodiments, the barrier layer can have at least one layer with a semi-crystalline structure. In some embodiments, the barrier layer can have at least one layer with an amorphous structure and at least one layer with a semi-crystalline structure, among others.

[0049] Moreover, in some embodiments, the barrier layer can have a first layer formed from a first material and a second layer formed from a second material, and the first material and the second material can be different from each other. As already explained, when the barrier layer has multiple arrangements of multiple layers of different materials, multiple atomic layers of the same material can be first deposited in multiple process cycles in an atomic layer deposition process to form a first layer arrangement. After a certain number of atomic layers, an atomic layer of another material can be deposited, for example, by changing the reactants used previously. Multiple atomic layers of this other material can then be deposited again to jointly form a second layer arrangement of the barrier layer. Optionally, a repeating sequence of multiple different layer arrangements can be formed in this way, and / or three or more different materials can be provided for the different layer arrangements.

[0050] For example, it may be provided that the first layer of the barrier layer is formed from a material that covers the resistive layer as an amorphous structure, in particular by atomic layer deposition. Thereafter, for example, subsequent layers may be provided, for which materials that form a semi-crystalline structure are used. In general, the barrier layer may be formed from any desired combination of layers of amorphous structure and layers of semi-crystalline structure. However, it may also be provided that all of the layers of the barrier layer have an amorphous or semi-crystalline structure and / or are formed from the same material. However, the use of layers of different materials and / or different structures may, in some cases, further increase the impermeability of the barrier layer to moisture.

[0051] In some embodiments, the barrier layer can be formed as electrically insulating or semiconductive, so that during intended use of the electrical component, no current flow can occur, particularly between the barrier layer and the electrical connector.

[0052] In some embodiments, the electrical resistance component can include, inter alia, two electrical connectors, the two electrical connectors being attached to the carrier, and the two electrical connectors being connected to each other by a resistive layer.

[0053] Moreover, in some embodiments, the barrier layer can be formed as a hermetic seal and thus can provide reliable protection of the resistant layer against moisture in liquid and / or vapor form.

[0054] In some embodiments, the barrier layer can be formed on the resistive layer by atomic layer deposition.

[0055] As already explained, the application of the barrier layer by atomic layer deposition can make it possible to apply the barrier layer thinly to the carrier and to cover the surface of the resistive layer with a uniform thickness, such that a conformal barrier layer with inorganic material can be formed. The application of the barrier layer by atomic layer deposition can therefore in particular make it possible to precisely reproduce the surface structure of the resistive layer. Moreover, atomic layer deposition can be carried out in a large process window or in a large temperature range, such that the barrier layer can be applied gently to the resistive layer, and damage to the resistive layer or changes in its electrical properties due to the application of the barrier layer can be avoided. Thus, the resistive layer can be covered by a thin inorganic barrier layer through atomic layer deposition, and a high level of protection of both the resistive layer against environmental influences and, in particular, against corrosion damage as a result of the ingress of moisture can be achieved, and it can be ensured that the previously defined electrical properties of the electrical resistive component (e.g. a precisely trimmed resistor) are not changed or impaired by the application of the barrier layer. Such a barrier layer therefore makes it possible to achieve the required precision of the electrical resistance components and also to ensure their long-term stability against environmental influences and under load.

[0056] In some embodiments, the barrier layer can include a metal oxide, a semiconductor oxide, a metal nitride, a semiconductor nitride, a metal oxynitride, and / or a semiconductor oxynitride. In such embodiments, the barrier layer can include aluminum oxide (Al2O3), titanium oxide (TiO2), titanium nitride (TiN), among others. x ), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and / or tungsten oxide (WO).

[0057] Such materials are particularly suitable for being applied to the resistive layer by atomic layer deposition, for which purpose a relatively large process window and / or temperature range is particularly available, for example an aluminium oxide layer can be applied to the resistive layer by atomic layer deposition in a temperature range of approximately 20° C. to 400° C.

[0058] As already explained, the barrier layer may in particular comprise several layers of different materials, the above-mentioned materials or groups of materials being in particular considered for each layer.

[0059] In some embodiments, the barrier layer can be at least partially covered by a protective layer. Such a protective layer can allow additional protection of the resistance layer against environmental influences, in that the barrier layer can already be shielded by the protective layer against moisture influences. However, the protective layer does not necessarily have to cover the barrier layer in a conformal manner, due to the resistance layer already being conformally covered by the barrier layer. Rather, small hollow spaces between the surface of the barrier layer on the side facing away from the resistance layer and the protective layer can be, for example, tolerable, since the resistance layer can already be reliably protected by the barrier layer and in particular against liquids that may possibly enter and / or collect in these hollow spaces. Thus, the protective layer can extend the protection of the resistance layer against environmental influences, but can possibly exert a smaller protective effect than the barrier layer and can therefore be applied in a simple manner.

[0060] In some embodiments, the protective layer can include an organic material. In some embodiments, the protective layer can be specifically formed and / or consist of an organic material. Moreover, in some embodiments, the protective layer can alternatively or additionally include an inorganic material. A combination of organic and inorganic materials can also be provided to form the protective layer.

[0061] A protective layer (especially an organic protective layer) can form an advantageous addition to an inorganic barrier layer, in that the organic protective layer can already form a reliable protection of the resistive layer against moisture in liquid form (e.g. from dew), while a conformal inorganic barrier layer can complete the protection of the resistive layer, especially against moisture in vapor form. The protective layer as an organic layer can also be thin, so that the barrier layer and the protective layer jointly form a thin coating of the resistive layer and are able to completely protect it against the effects of moisture.

[0062] In addition to the double protective effect, such protective layers (and in particular organic protective layers) can also be used as an etching mask during the manufacture of the electrical resistive component, for example in order to be able to wet chemically remove a previously applied barrier layer in the region of the electrical connector. This makes it possible to omit any additional structuring steps, for example again in certain regions to be able to remove the barrier layer (which has been applied by atomic layer deposition and which can cover the entire surface of the part of the electrical resistive component that is subjected to the process of atomic layer deposition). Rather, this can be done in a comfortable and simple manner by a subsequent etching step using the protective layer as an etching mask.

[0063] In some embodiments, the protective layer can include, for example, an epoxy resin, a polyimide, a polyamide, a polyimide-amide, a silicone resin, an acrylate, a polyurethane, and / or silicon dioxide (SiO2).

[0064] The resistive layer may in some embodiments have trimming structures, for example the resistance value of the resistive layer may be precisely defined by such trimming structures.

[0065] The trimming structures can in particular form cuts and / or constrictions in the resistive layer along the extent plane of the resistive layer. Due to such cuts or constrictions, the trimming structures can in particular interrupt the surface of the resistive layer, such that they are not part of the surface structure along the surface of the resistive layer, but form larger structures thereon. The cuts and / or constrictions can in particular extend from the surface of the resistive layer to the surface of the carrier and cut the resistive layer completely. For example, the trimming structures can be formed lithographically or by laser structuring after the resistive layer has been applied to the carrier.

[0066] In some embodiments, the resistive layer can include chromium, nickel, or cermet. Moreover, the resistive layer can include, for example, silicon, tantalum, molybdenum, niobium, aluminum, copper, titanium, carbon, and / or tantalum nitride. The resistive layer can in particular be configured as a thin film resistor, which can be susceptible to corrosion due to the small layer thickness and therefore require reliable protection against moisture. Alternatively, the resistive layer can in particular be configured as a thick film resistor, which can in particular include cermet. Cermet thick film resistors can also be undesirably affected by corrosion, such that a reliable sealing against moisture is equally necessary for such thick film resistors.

[0067] The resistive layer can be planar in some embodiments, in which the carrier can be, inter alia, a rectangular solid, and the resistive layer can be formed on a surface of the carrier.

[0068] Alternatively, the resistive layer can be hollow cylindrical in some embodiments. In such embodiments, the carrier can be specifically cylindrical and the resistive layer can circumferentially surround the carrier. Moreover, in such embodiments, the electrical connector can be configured as a cap covering one end face of the carrier and / or two mutually oppositely disposed electrical connectors configured as respective caps at one end face of the cylindrical carrier can be formed on the carrier.

[0069] Moreover, in some embodiments, the resistive layer can be meandering or spiral. In general, the shape of the resistive layer can be determined by the shape of the carrier, which may depend, among other things, on the intended use of the resistive component.

[0070] In some embodiments, the carrier can include a ceramic substrate, particularly aluminum oxide (Al2O3), aluminum nitride (AlN), and / or silicon dioxide (SiO2). The carrier can be made of and / or consist of a ceramic substrate, particularly aluminum oxide (Al2O3), aluminum nitride (AlN), and / or silicon dioxide (SiO2).

[0071] The present invention relates to an electrical resistance component and in particular to a method for manufacturing an electrical resistance component according to any one of the embodiments described above, said method comprising the steps of: - providing an electrically insulating carrier; - attaching at least one electrical connector to the carrier; - applying at least one resistive layer to the carrier, the resistive layer having a surface structure along its surface on the side facing away from the carrier; - covering the resistive layer with a barrier layer, the barrier layer comprising an inorganic material, the barrier layer reproducing a surface structure of the resistive layer continuously and with a uniform thickness; The present invention further relates to a method, comprising:

[0072] For example, the resistive layer can be applied to the carrier before or after the at least one connector element, and the resistive layer can be applied so that it contacts the connector element. Moreover, the two respective electrical connectors can be attached to the carrier on their sides arranged opposite each other. The electrical connectors can be additionally attached to the carrier, in particular by screen printing of a conductive metal paste and by subsequent baking. The resistive layer can be configured, for example, as a thin-film resistor and can be applied to the carrier by a physical vapor deposition process and / or can form a thin metal layer (which can include, for example, nickel, chromium or cermet). Alternatively thereto, the resistive layer can be configured as a thick-film resistor and can in particular be applied to the carrier as a paste (in particular as a glass paste with metal particles or with metal oxide particles) by screen printing.

[0073] Provision can further be made that the resistive layer has a current conducting layer, which is applied to the carrier, and which can be covered by an additional, but non-conforming and / or non-continuous, additional material layer before the covering of the resistive layer by the barrier layer in order to stabilize the current conducting layer of the resistive layer. Such an additional material layer of the resistive layer can in particular be applied to the current conducting layer by sputtering, and in such an embodiment the current conducting layer and the additional material layer jointly form the resistive layer, which can then be uniformly covered by the barrier layer. In general, however, the resistive layer can also be formed only by the current conducting layer.

[0074] As already explained above, reliable sealing of the resistive layer by the barrier layer against penetrating moisture can be achieved by precise reproduction of the surface structure of the resistive layer, which can be determined, for example, on the basis of the unevenness during the physical gas deposition process for applying the resistive layer, or by the roughness of the carrier surface, or by the roughness that occurs when applying the resistive layer by screen printing. Since the barrier layer also comprises inorganic material, reliable protection can be achieved, in particular also against moisture in the form of vapor.

[0075] In some embodiments, the barrier layer can be applied to the resistive layer by atomic layer deposition. This allows in particular the application of the barrier layer in a relatively large process window or in a relatively large temperature range. The barrier layer can be applied successively to the resistive layer in the course of the atomic layer deposition process, in particular by a number of parallel atomic layers, and reproduce the surface structure of the resistive layer with a uniform thickness, which can be substantially determined by the number of atomic layers or the number of successively performed cycles of the atomic layer deposition process. Hermetic sealing of the resistive layer and in particular of all areas of the resistive layer can be achieved hereby, for example hollow spaces formed by the surface structure, recesses formed by the surface structure of the resistive layer, recesses formed by the surface of the carrier and / or gaps in the resistive layer can also be uniformly covered or lined by the barrier layer.

[0076] In some embodiments, the resistive layer can be covered by a number of layers that together form a barrier layer. As already explained above, this can be done in particular by atomic layer deposition, in that each atomic layer, which covers the previously produced layer, is produced in successive cycles of atomic layer deposition.

[0077] Moreover, in some embodiments, a first layer of the plurality of layers can be formed from a first material and a second layer of the plurality of layers can be formed from a second material, the first material and the second material can be different from each other. The barrier layer can in particular be formed as a stack of layers of different materials, in particular the materials already mentioned above can be considered for the individual layers.

[0078] Alternatively or additionally, in some embodiments, at least one layer of the plurality of layers can have an amorphous structure and / or at least one layer of the plurality of layers can have a semi-crystalline structure. The barrier layer can in particular have both a layer of semi-crystalline structure and a layer of amorphous structure, so as to realize a sealing of the resistive layer that is as impermeable as possible. For example, such an amorphous layer and / or a semi-crystalline layer can be formed by selecting appropriate materials in an atomic layer deposition process for producing the respective layer.

[0079] In some embodiments, the barrier layer can have a thickness of at most 1000 nanometers (nm). Alternatively or additionally, the barrier layer can have a thickness of at least 5 nanometers (nm). The applied barrier layer applied to the resistive layer by atomic layer deposition can already form a reliable sealing of the resistive layer, in particular at such a thickness, and the barrier layer can already be completely hermetically sealing, in particular at a thickness of 10 nm, 20 nm or 100 nm. Thus, the barrier layer can in particular have a thickness of approximately 10 nm, approximately 20 nm, approximately 50 nm or approximately 100 nm.

[0080] In some embodiments, a protective layer can be applied to the barrier layer, due to which the protection of the resistance layer already provided by the barrier layer against environmental influences (and in particular moisture) can be perfected, for example to keep moisture already in liquid form away from the barrier layer.

[0081] In some embodiments, the protective layer can include an organic material, which can in particular prevent the passage of moisture in liquid form, while the barrier layer including an inorganic material can prevent the passage of moisture in vapor form to the resistive layer. Due to the cooperation of the protective layer and the barrier layer, the resistive layer can thus be completely protected against the effects of moisture. Moreover, in some embodiments, the protective layer can include an inorganic material and / or a combination of organic and inorganic materials.

[0082] In some embodiments, the protective layer can be applied to the barrier layer in a structured manner by screen printing.

[0083] Moreover, in some embodiments, the barrier layer can be wet-chemically removed in the region of the connector element and the protective layer can be used as an etching mask. The protective layer can be applied to the barrier layer in particular in a structured manner, so that the sections of the barrier layer required to protect the resistive layer are covered by the protective layer and can therefore be retained during etching. In contrast, the sections of the barrier layer that cover the at least one electrical connector can be easily removed wet-chemically by using the protective layer as an etching mask, without the need for an additional complex structuring step of the barrier layer.

[0084] The barrier layer can in particular cover the resistive layer beyond the respective edges of its surface, such that on the side facing the carrier the resistive layer can be surrounded by the carrier and in all further sections the resistive layer can be surrounded by the barrier layer, so that the resistive layer can be completely surrounded and hermetically sealed, in particular also after wet-chemical removal of the barrier layer in the region of the electrical connector.

[0085] Moreover, in some embodiments, the resistive layer can be provided with trimming structures before the application of the barrier layer. This can be done in particular lithographically and / or by laser structuring. Such trimming structures can, for example, make it possible to precisely define the electrical resistance of the resistive layer, and the trimming structures can, for example, form cuts and / or constrictions in the resistive layer.

[0086] The steps for manufacturing an electrical resistive component can be performed at wafer level, in particular by performing the steps for a plurality of interconnected electrical resistive components jointly and then separating (in particular by sawing up) the electrical resistive components.

[0087] Moreover, the invention is also directed to an electrical resistance component manufactured by a method according to the described embodiments. In particular, the invention relates to an electrical resistance component manufactured in a method according to the described embodiments.

[0088] The invention will now be described, purely by way of example, with reference to embodiments and drawings. [Brief description of the drawings]

[0089] [Figure 1A]3A-3C are respective schematic diagrams of an electrical resistance component (that is configured as an electrical resistance component) at different steps of a method for manufacturing the electrical resistance component; [Figure 1B] 3A-3C are respective schematic diagrams of an electrical resistance component (that is configured as an electrical resistance component) at different steps of a method for manufacturing the electrical resistance component; [Figure 1C] 3A-3C are respective schematic diagrams of an electrical resistance component (that is configured as an electrical resistance component) at different steps of a method for manufacturing the electrical resistance component; [Figure 1D] 3A-3C are respective schematic diagrams of an electrical resistance component (that is configured as an electrical resistance component) at different steps of a method for manufacturing the electrical resistance component; [Figure 1E] 3A-3C are respective schematic diagrams of an electrical resistance component (that is configured as an electrical resistance component) at different steps of a method for manufacturing the electrical resistance component; [Figure 1F] 3A-3C are respective schematic diagrams of an electrical resistance component (that is configured as an electrical resistance component) at different steps of a method for manufacturing the electrical resistance component; [Figure 2A] 2B is a schematic detailed view of each of a section of an electrical resistive component, the electrical resistive component being configured as a thick film resistive component, the electrical resistive component having a resistive layer having a surface structure along its surface, the surface structure being covered by a barrier layer that reproduces the surface structure with a uniform thickness, and a protective layer covering the barrier layer is additionally shown in FIG. [Figure 2B]2B is a schematic detailed view of each of a section of an electrical resistive component, the electrical resistive component being configured as a thick film resistive component, the electrical resistive component having a resistive layer having a surface structure along its surface, the surface structure being covered by a barrier layer that reproduces the surface structure with a uniform thickness, and a protective layer covering the barrier layer is additionally shown in FIG. [Figure 3A] 1A-1C are further schematic detailed views of respective sections of an electrical resistance component to illustrate the formation of a barrier layer having multiple atomic layers, trimming structures formed in the resistive layer, hollow spaces at the surface of the resistive layer reproduced by the barrier layer, and the resistive layer including a current conducting layer and an additional material layer. [Figure 3B] 1A-1C are further schematic detailed views of respective sections of an electrical resistance component to illustrate the formation of a barrier layer having multiple atomic layers, trimming structures formed in the resistive layer, hollow spaces at the surface of the resistive layer reproduced by the barrier layer, and the resistive layer including a current conducting layer and an additional material layer. [Figure 3C] 1A-1C are further schematic detailed views of respective sections of an electrical resistance component to illustrate the formation of a barrier layer having multiple atomic layers, trimming structures formed in the resistive layer, hollow spaces at the surface of the resistive layer reproduced by the barrier layer, and the resistive layer including a current conducting layer and an additional material layer. [Figure 4A] 2C and 2D are schematic detail views of a section of an electrical resistive component corresponding to FIG. 2A or FIG. 2B, but where the resistive component is configured as a thin film resistive component, and for illustrating trimming structures formed in the resistive layer, and for illustrating gaps in the resistive layer created by shadowing effects. [Figure 4B]2C and 2D are schematic detail views of a section of an electrical resistive component corresponding to FIG. 2A or FIG. 2B, but where the resistive component is configured as a thin film resistive component, and for illustrating trimming structures formed in the resistive layer, and for illustrating gaps in the resistive layer created by shadowing effects. [Figure 4C] 2C and 2D are schematic detail views of a section of an electrical resistive component corresponding to FIG. 2A or FIG. 2B, but where the resistive component is configured as a thin film resistive component, and for illustrating trimming structures formed in the resistive layer, and for illustrating gaps in the resistive layer created by shadowing effects. [Figure 4D] 2C and 2D are schematic detail views of a section of an electrical resistive component corresponding to FIG. 2A or FIG. 2B, but where the resistive component is configured as a thin film resistive component, and for illustrating trimming structures formed in the resistive layer, and for illustrating gaps in the resistive layer created by shadowing effects. [Figure 5A] 1 is a perspective view of an embodiment of an electrical resistance component having a cylindrical carrier. [Figure 5B] 1 is a cross-sectional view of an embodiment of an electrical resistance component having a cylindrical carrier. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0090] 1A to 1F illustrate diagrammatically a method for manufacturing an electrical resistance component 11, the complete electrical resistance component 11 being shown diagrammatically in cross-section in FIG. 1F.

[0091] 1A, an electrically insulating carrier 13, which here has a parallelepiped shape by way of example, is provided in the method. The carrier 13 may in particular comprise a ceramic substrate and may for example be formed and / or consist of aluminium oxide (Al2O3).

[0092] 1B, two electrical connectors 17 are attached to the carrier 13, which can be attached, for example, by screen printing and subsequent baking of a conductive metal paste. The two electrical connectors 17 can in particular form respective electrical contacts, via which the electrical resistive component 11 can be electrically connected to further components.

[0093] Then, in step 105, a resistive layer 15 is applied to the carrier 13, which resistive layer 15 connects the two electrical connectors 17 to each other. For example, the resistive layer 15 can be applied to the carrier 13 by physical vapor deposition, and a thin metal layer can be formed, and a sputtering process (in which directional material application takes place) can in particular be used to apply the resistive layer 15. The resistive component 11 can in particular be configured as a thin-film resistive component (also designated as a thin-layer resistive component) by such application of the resistive layer 15, which can have a thickness in the range of 50 nanometers to 500 nanometers (see also Figures 4A to 4D in this regard). However, alternatively thereto, the resistive component 11 can also be configured as a thick-film resistive component, and the resistive layer 15 of such a resistive component 11 can be formed, for example, by a glass paste containing metal or metal oxide particles and can be applied to the carrier 13 by screen printing (see also Figures 2A to 3C in this regard). The resistive layer 15 applied to the carrier 13 in such a manner can have a thickness of, for example, up to 10 μm. Moreover, it is also possible to first apply or attach the resistive layer 15 and then apply or attach the electrical connector 17 to the carrier 13.

[0094] For example, the resistive layer 15 can be formed by a thin metal layer, which can for example comprise nickel or chromium, which can in particular be applied to the carrier 13 by physical vapour deposition. Alternatively thereto, the resistive layer can for example be formed by a cermet thick film. However, the formation from nickel or chromium in particular makes it possible to apply the resistive layer 15 to the carrier 13 as a thin film resistor, such that a flat design of the electrical resistive component 11 or resistive components can be realised.

[0095] In order to be able to define a particular electrical resistance in the resistive layer 15, the resistive layer 15 can be provided with trimming structures 47 in a step not shown in Figures 1A to 1F, for example by forming cuts and / or constrictions in the resistive layer 15 lithographically or by laser structuring. Such cuts or constrictions can interrupt or separate sections of the resistive layer 15 from one another in a plan view and can extend through the resistive layer 15 to the carrier 13 in a side view (see also Figures 3B and 4C). For example, a provision can thus be made to provide the resistive layer 15 with trimming structures 47 between the steps shown in Figures 1C and 1D.

[0096] Regardless of the trimming structure 47 described above (in particular, interruptions can be formed in the resistive layer 15 by the trimming structure 47, which intentionally reach the carrier 13), the resistive layer 15 has, on the side 25 facing away from the carrier 13, a surface 19 with a surface structure 21, which can determine, for example, the roughness of the surface 19 of the resistive layer 15 (see Figures 2A to 4D). In contrast to the intentionally applied trimming structure 47, the surface structure 21 can be mainly caused by the process for applying the resistive layer 15 to the carrier 13, in that different structures or heights of the resistive layer 15 can be formed on the carrier 13, for example, during a sputtering process and / or a screen printing process, and can be reflected in a microscopic unintentionally generated surface structure 21 with a roughness approximately in the range of 0.1 μm to 3 μm.

[0097] Moreover, in particular in the configuration of the resistive component 11 as a thin-film resistive component, the thickness of the resistive layer 15 can be smaller than the roughness of the surface 71 of the carrier 13 to which the resistive layer 15 is applied (see FIGS. 4A to 4D). In such an electrical resistive component 11, the surface structure can therefore be substantially determined by the roughness of the surface 71 of the carrier 13. For example, the roughness of the surface 71 of the carrier 13 can be in the range of 1 μm to 3 μm, whereas the thickness of the resistive layer 15 of a resistive component 11 configured as a thin-film resistive component can be in the range of 50 nanometers to 500 nanometers. In the case of a resistive component 11 configured as a thick-film resistive component, the thickness of the resistive layer can, in contrast, be up to 10 μm and thus exceed the roughness of the surface 71 of the carrier, such that the surface structure 21 of the resistive layer 15 can in such a case be determined by the roughness of the resistive layer 15 itself (see FIGS. 2A to 3C). Such roughness may be in the above mentioned range of approximately 0.1 μm to 3 μm and may therefore correspond substantially to the roughness of the surface 71 of the carrier 13 .

[0098] In the case of electrical resistance components 11, there is generally a requirement to make these electrical resistance components 11 as small as possible, in particular as flat or thin as possible, but at the same time a requirement to ensure high precision and stability over long periods of time and under load. For example, it may be necessary for the resistance set in a resistive layer 15 formed as a resistive layer to undergo a change of at most 0.1% over a long period of use (for example 1000 hours) at 10% nominal load. Moreover, a high precision of the set resistance value is necessary, for example a tolerance of 1% to 0.01% may be required. However, due to the small layer thickness, the required thin resistive layers 15 often have a high sensitivity to corrosion by anodic oxidation when simultaneously applying a voltage, such that the long-term stability of such electrical resistance components 11 can be impaired by contact with moisture.

[0099] Thus, in step 107 shown in FIG. 1D, the resistive layer 15 is covered by a barrier layer 23, the barrier layer 23 comprising an inorganic material and reproducing with a uniform thickness D the surface structure 21 of the covered resistive layer 15 (see also FIGS. 2A to 4D). The barrier layer 23 can in particular be applied to the resistive layer 15 by atomic layer deposition, such that the surface structure 21 of said resistive layer 15 can be reproduced precisely on the side 25 facing away from the carrier 13. Such atomic layer deposition can in particular make it possible to form the barrier layer 23 as a conformal layer with a uniform thickness D in order to reproduce precisely the surface structure 21 of the resistive layer 15. Moreover, atomic layer deposition can be performed in a relatively wide process window or in a wide temperature range, such that the barrier layer 23 can be applied gently to the resistive layer 15, such that it can be ensured that the resistance set in the resistive layer 15 is not changed by the application of the barrier layer 23.

[0100] Since the barrier layer 23 comprises an inorganic material, it is in particular able to provide a reliable protection of the resistive layer 15 against moisture in the form of vapor, and it is able to hermetically seal the resistive layer 15. For this purpose, different materials can be considered for the barrier layer 23, which can comprise, for example, metal oxides, semiconductor oxides, metal nitrides, semiconductor nitrides, metal oxynitrides and / or semiconductor oxynitrides. The barrier layer 15 can in particular be made of aluminium oxide (Al2O3 or Al2O3:N), titanium oxide (TiO2), titanium nitride (TiN x), hafnium dioxide (HfO2), zirconium dioxide (ZrO2) and / or tungsten oxide (WO), which can be applied to the resistive layer, for example, by atomic layer deposition. In designing the barrier layer 23 with the above-mentioned materials, the barrier layer 23 can be formed, in particular, as electrically insulating or semiconductive, so that the current flow through the electrical resistive component 11 or between the two connectors 17 can be completely through the resistive layer 15, and so that the predefined resistance value of the electrical resistive component 11 can be predefined, for example, precisely.

[0101] Moreover, the barrier layer 23 can have an amorphous structure, which can be created directly as a result of the application of the barrier layer 23, for example, also by atomic layer deposition. In comparison with a crystalline structure, such an amorphous structure can be formed uniformly and in particular can have no grain boundaries (differently oriented sections of the crystals adjoin each other at the grain boundaries). Although such grain boundaries can form undesirable cracks in the crystalline structure and impair the sealing of the resistance layer 15, a reliable sealing against moisture, in particular in the form of vapor, can be achieved by the amorphous inorganic barrier layer 23. However, alternatively or additionally, the barrier layer 23 can also have a semi-crystalline structure.

[0102] 2A to 4D show schematic details to illustrate the reproduction of the surface structure 19 of the resistive layer 15 by the barrier layer 23. In FIGS. 2A to 3C, the electrical resistive component 11 is illustrated, which is configured as a thick-film resistive component, in which the thickness of the resistive layer 15 exceeds the roughness of the surface 71 of the carrier 13. In contrast thereto, in FIGS. 4A to 4D, the electrical resistive component 11 is illustrated diagrammatically, which is configured as a thin-film resistive component, in which the roughness of the surface 71 of the carrier 13 is greater than the thickness of the resistive layer 15. However, due to being merely schematic representations, precise size or length ratios cannot be seen from FIGS. 2A to 4D as well. The ratio between the thickness of the resistive layer 15 and its roughness or between the thickness D of the barrier layer 23 and the thickness of the resistive layer 15 in particular does not always have to correspond precisely to the respective representations in FIGS. 2A to 4D.

[0103] 2A and 4A show, for example, that due to the formation of the barrier layer 23 with a uniform thickness D, the three-dimensional course of the surface structure 55 of the barrier layer 23 on the side 29 of the barrier layer 23 facing away from the resistive layer 15 closely follows the surface structure 21 of the resistive layer 15 along its surface 19 on the side 25 facing away from the carrier 13. Thus, essentially, the surface structure 55 of the barrier layer 23 corresponds to the surface structure 21 of the resistive layer 15, but the width B1 of the recess 53 on the surface 19 of the resistive layer 15 or the spacing between the two sections 67 can be reduced, for example, by twice the thickness D of the barrier layer 23 in the case of the corresponding recess 53 in the surface structure 55 of the barrier layer 23. Thus, the width B2 or the spacing between the two sections 69 on the surface 55 of the barrier layer 23 formed flush with the section 67 on the surface 19 of the resistive layer 15 can correspond to a width B1 reduced by twice the thickness D of the barrier layer 23.

[0104] The barrier layer 23 reproduces the surface structure 21 of the surface 19 of the resistive layer 15, so that the surface structure 55 of the barrier layer 23 follows, as it were, the course of the surface structure 21 of the surface 19 of the resistive layer 15 in an interval corresponding to the thickness D of the barrier layer 23. In contrast thereto, the structure of the barrier layer 23 on the side 27 facing the resistive layer 15 corresponds to the surface structure 21 of the surface 19 of the resistive layer 15, in particular in that on the side 27 the barrier layer 23 is directly adjacent to the resistive layer 15 and in contact with the resistive layer 15 or its surface 19. The surface 19 of the resistive layer 15 can therefore in particular be contacted by the barrier layer 23 at all positions.

[0105] 2A further shows that the surface structure 21 of the surface 19 of the resistive layer 15 is capable of forming an open hollow space 31, which is bounded by two mutually oppositely arranged wall sections 33 and 35 in the cross section shown. The hollow space 31 has, moreover, an opening 39, which is oriented upwards, i.e. it faces away from the carrier 13. In contrast to the recess 53, which is also formed in the surface structure 21, the hollow space 31 is bounded by a recess 37 of the resistive layer 15, which is formed by the wall section 35 and which, as it were, overhangs with respect to the coverage plane E of the resistive layer 15 (see also FIG. 3C).

[0106] Despite this recess 37 in the resistive layer 15, the barrier layer 23 covers, with a uniform thickness D, the two wall sections 33 and 35 of the hollow space 31 of the surface structure 21 (and thus also covers the recess 37) and completely lines the hollow space 31 (see also FIG. 3C). The surface of the hollow space 31 of the resistive layer 15 (including the recess 37) is uniformly covered by the barrier layer 23, such that the surface structure 55 of the barrier layer 23 on the side 29 facing away from the resistive layer 15 likewise has a hollow space with an opening in the region of the hollow space 31. In this respect, the barrier layer 23 in particular does not close the opening 39 of the hollow space 31 of the surface structure 21 of the surface 19 of the resistive layer 15, and no hollow spaces are created between the resistive layer 15 and the barrier layer 23 that could impair the sealing of the resistive layer 15 by the barrier layer 23 or the stability of this sealing.

[0107] In the embodiment of the thick-film resistive component illustrated in Figures 2A to 3C, the wall sections 33 and 35 of the resistive layer 15 and the hollow space 31 are formed by the resistive layer 15 itself. In contrast thereto, in the embodiment of the thin-film resistive component illustrated in Figures 4A to 4D, the surface 71 of the carrier 15 has two recesses 38, and the resistive layer 15 has a respective gap 49 or "pinhole" in the region of the recesses 38 of the carrier 15. Such a gap 49 can be created due to a shadowing effect during application of the resistive layer 15 to the carrier 13, especially if the resistive layer 15 is applied by a directional process (e.g. a sputtering process). As the close-up according to Figure 4D illustrates, the material used to form the resistive layer 15 may not reach the recesses 38 of the surface 71 of the carrier 13 and the section 79 of the surface 71 of the carrier 13 that is overshadowed by the recesses 38 with respect to the direction S, when the material is applied oriented along the direction S, so that the gap 49 is not created in the resistive layer 15. Moreover, in the case of a resistive component 15 configured as a thin-film resistive component, the resistive layer 15 can have an additional material layer (not shown in the figures) on its upper side in order to stabilize the current conducting parts of the resistive layer 15. Such an additional layer can in particular also be applied to the current conducting layer of the resistive layer 15 by a directional process, such that the shadowing effect explained above can also occur in the additional material layer, such that the additional material layer cannot be formed continuously and "pinhole-free".

[0108] Thus, the resistive layer 15 has gaps 49 in the region of the recesses 38 of the carrier 15, but the barrier layer 23 also continuously covers the recesses 38 of the carrier 13, the overshadowed sections 79 and the resistive layer 15 present in the environment of the gaps 49 with a uniform thickness D (see Figs. 4A, 4B and 4D). The edges 77 of the gaps 49 are therefore in particular also covered in a conformal manner by the barrier layer 23, such that influence of the resistive layer 15 at the edges 77 by moisture can be avoided (see Fig. 4D). Moreover, the carrier 13 again forms respective hollow spaces 31 in the region of the recesses 38, the wall sections 35 formed by the respective recesses 38 having gaps 49 and not covered by the resistive layer 15, while the opposite wall sections 33 of the carrier 13 not forming the recesses are covered by the resistive layer 15. However, the barrier layer 23 lines the hollow space 31 with a constant thickness D in a perfectly conformal manner.

[0109] With regard to one embodiment of a thick-film resistive component, FIG. 3C again shows in enlarged form a section of the resistive layer 15, in which the surface structure 21 of the resistive layer 15 forms a hollow space 31 along its surface 19 at the side 25 facing away from the carrier 13. As can be seen from FIG. 3C, the wall section 35 forming the recess 37 adopts an angle of >90 degrees with respect to the range plane E along which the resistive layer 15 extends. Thus, the normal N1 of the surface structure 21 intersects with the range plane E of the resistive layer 15 in the region of the wall section 35 in a direction facing away from the surface 19 of the resistive layer 25. Moreover, the normal N2 of the surface structure 21 intersects with the wall section 35 or the recess 37, which at this point overhangs with respect to the range plane E of the resistive layer 15 in a direction facing away from the surface 19 of the resistive layer 15 at the lowest point 57 of the hollow space 31. The hollow spaces 31 are completely covered and lined by the barrier layer 23, such that the surface structure 55 of the barrier layer 23 also has a corresponding hollow space. The same geometrical relationship also exists in the case of the recesses 38 (illustrated by Figures 4A, 4B and 4D) in the surface 71 of the carrier 13 and the hollow spaces 31, the recesses 38 in particular adopting an angle of >90 degrees with respect to the extent plane of the carrier 13, said normal being in this case capable of relating to the surface 71 of the carrier 13.

[0110] Moreover, with regard to the embodiment of the thick-film resistive component, Fig. 2A again shows that the surface structure 21 can have further hollow spaces 51, which are however filled by the barrier layer 23 and whose openings are therefore closed by the barrier layer 23. Such filled hollow spaces 51 can be created while covering the resistive layer 15 by the barrier layer 23, if the respective wall sections 59 of the hollow spaces 51 have a distance from each other that is smaller than twice the thickness D of the barrier layer 23. In this respect, the thickness of the barrier layer 23 (measured from the lowest point of such filled hollow spaces 51) can in some cases approximately correspond to the depth of the hollow spaces 51, such that the thickness of the barrier layer 23 at such measurement point can differ from this uniform thickness D, despite the precise reproduction of the surface structure 21 with the uniform thickness D. However, as explained above, this does not merely result due to the small distance of the two wall sections 59 of the hollow space 51 from each other and due to an uneven reproduction of the surface structure 21 of the surface 19 of the resistive layer 15, so that a conformal reproduction of the surface structure 21 by the barrier layer 23 also finally occurs in the hollow space 51. This can also generally be done with an electrical resistive component 11 that is configured as a thin-film resistive component.

[0111] Moreover, it can be seen from Fig. 3A that the barrier layer 23 can include a number of parallel layers 41 arranged one on top of the other, each layer 41 having an arrangement of a single atomic layer or of multiple atomic layers. The layers 41 thus also reproduce the surface structure 21 of the surface 19 of the resistive layer 15, and due to the parallel arrangement of the layers 41 on top of each other, the thickness D of the barrier layer 23 can ultimately be determined primarily by the number of layers 41 (in particular atomic layers). Such a multi-layer design of the barrier layer 23 can also be provided in the resistive component 11 (thin film resistive component) illustrated by Figs. 4A to 4D.

[0112] As already explained, the barrier layer 23 can comprise an inorganic material and have an amorphous and / or semi-crystalline structure. Moreover, provision can be made that the layers 41 comprise different materials and that the barrier layer 23 is formed as a stack of different materials. Moreover, provision can be made that some of the layers 41 form an amorphous structure, while others of the layers 41 form a semi-crystalline structure. Thus, the barrier layer 23 can comprise a combination of amorphous and semi-crystalline layers 41, the respective structures being produced in particular by the selection of appropriate materials and / or process conditions during each cycle of the atomic layer deposition process. In such a stack of different materials, the individual layers 41 of the respective materials can in particular comprise a plurality of atomic layers (for example, in each case, 10 or more atomic layers).

[0113] Typically, such an atomic layer 41 may have defects (not shown in FIG. 3A ), which may be created, for example, by the termination of the process step of atomic layer deposition before the complete formation of the layer 41, and the hermetic barrier layer 23 may finally be formed by the superposed layer 41. However, due to such defects, the thickness D of the barrier layer 23 may also vary slightly, but the ratio between the minimum and maximum thickness of the barrier layer 23 may be greater than 0.8, in particular greater than 0.9. The thickness D of the barrier layer 23 may in particular be less than 500 nm and / or at least 100 nm, and a thickness D of the barrier layer 23 of 100 nm may already enable hermetic sealing of the resistive layer 15, while in particular the resistance of the barrier layer 23 (and thus its reliability for shielding the resistive layer 15 against moisture) may be increased by increasing the thickness D up to 500 nm.

[0114] Moreover, it can be seen from Figures 2A to 4D that the roughness of the surface structure 55 of the barrier layer 23 can be in the range of 0.2 to 1.0 times the roughness of the surface structure 21 of the resistive layer 15, since the barrier layer 23 realizes a certain homogenization, and the roughness of the surface structure 55 of the barrier layer 23 can be smaller than the roughness of the surface structure 21 of the resistive layer 15. Figure 3B again illustrates that the surface structure 21 of the resistive layer 15 is finally determined by its roughness and forms a microscopic structure along the surface 19 of the resistive layer 15, which is separated into two sections 61 and 63 by the indicated cutout of the trimming structure 47, in comparison with the trimming structure 47 in the resistive component 11 configured as a thick-film resistive component. The trimming structure 47 therefore does not form the surface structure 21 of the resistive layer 15, but rather represents a superposition of this surface structure 21.

[0115] In the case of a thin film resistive component, the thickness of the resistive layer 15, in contrast, can be smaller than the roughness of the surface structure 21 of the resistive layer 15, as shown in FIG. 4C, so that the trimming structure 47 can form only a small cut compared to the roughness of the surface structure 21.

[0116] After the barrier layer 23 has been applied and after the resistive layer 15 has been covered with a uniform thickness D, a protective layer 43 can be applied to the barrier layer 23 in step 109 (see FIG. 1D). This protective layer can in particular comprise an organic material and can be applied to the barrier layer 23 in a structured manner by screen printing. However, the protective layer 43 does not necessarily have to perfectly reproduce the surface structure 55 of the barrier layer 23, rather hollow spaces can possibly be created between the barrier layer 23 and the protective layer 43 in the region of recesses or hollow spaces of the surface structure 55 of the barrier layer 23. However, as FIGS. 2B and 4B illustrate, such hollow spaces can be largely avoided by careful application of the protective layer 43.

[0117] Since the protective layer 43 comprises an organic material, protection of the resistive layer 15 against environmental influences can be made complete. The protective layer 43 can in particular reliably allow the passage of moisture in liquid form (e.g. the passage of dew), while the barrier layer 23 can seal the resistive layer 15 against moisture in vapor form that may pass through the organic protective layer 43 under certain circumstances. Any damage to the resistive layer 15 due to corrosion and / or a change in its electrical properties (e.g. a change in the resistance value) can thus be reliably prevented. However, the protective layer 43 can also comprise an inorganic material, as well as a combination of organic and inorganic materials.

[0118] For example, the protective layer 43 may include an organic material such as an epoxy resin, a polyimide, a polyamide, a polyimide-amide, a silicone resin, an acrylate, and / or a polyurethane. Moreover, the protective layer 43 may include, for example, silicon dioxide (SiO2).

[0119] In addition to increasing the protective effect of the resistive layer 15, the protective layer 43, due to its structuring, can be further developed to be used as an etching mask 45 in step 109 to wet-chemically remove the barrier layer 23 in the respective regions 65 of the connector 17 (see FIG. 1F). The barrier layer 23, which is applied in particular by atomic layer deposition, can therefore be removed from the connector 17 in a simple manner and in particular without the need for additional and complex structuring steps, in order to enable the electrical connection of the resistive component 11 to further electrical components. The resistive component 11 shown can therefore also be constructed easily and cheaply as a thin component 11, but due to the reliable protection of the resistive layer against environmental influences, a high stability over long periods of time can be ensured at the same time.

[0120] Although the steps for manufacturing the electrical resistance component 11 in Figures 1A and 1F are shown with respect to a single electrical resistance component, provision can be made that the steps described with reference to Figures 1A to 1F are performed at wafer level and that each electrical resistance component 11 can be separated by subsequent sawing of the wafer.

[0121] The electrical resistance component 11, which is shown in cross section in FIG. 1F, can in particular be of parallelepiped shape, such that the resistive layer 15 can be applied in a planar manner to the surface of the carrier 13. In contrast thereto, FIGS. 5A and 5B show further embodiments, in which the carrier 13 is configured as a cylinder and the resistive layer 15 is therefore configured as a hollow cylinder, which surrounds the carrier 13 peripherally (see FIG. 5B). Similarly, the protective layer 43 can also surround the barrier layer 23 in such an embodiment in a hollow cylindrical shape. As FIG. 5A shows, the connector 17 of such a cylindrical electrical resistance component 11 can in particular be configured as a cap on the carrier 13, and the resistive layer 15 can be completely outwardly hermetically sealed by the barrier layer 23 and the protective layer 43.

[0122] As an alternative to the embodiment of FIG. 5A (where the carrier 13 and the connector 17 have a reduced radius relative to the barrier layer 23 and the protective layer 43), it is also possible to provide that the connector 17 is formed with the same radius as the protective layer 43 and completely covers the end face of the cylindrical electrical resistance component 11. In this regard, it is also possible to provide that the connector is formed from the barrier layer 23 and / or from the protective layer 43 only after application of the resistive layer 15, with the provision that in such an embodiment the barrier layer 23 does not have to cover the resistive layer 15 in the direction of the end face of the cylinder, in particular to allow contact between the connector 17 and the resistive layer 15. [Explanation of symbols]

[0123] 11 Electrical Resistance Components 13. Career 15 Resistance layer 17 Electrical Connectors 19 Surface of the resistive layer 21 Surface structure 23 Barrier Layer 25 Side of the resistive layer facing away from the carrier 27 The side of the barrier layer facing the resistive layer 29 The side of the barrier layer facing away from the resistive layer 31 Open Hollow Space 33 Wall Section 35 Wall Section 37 Recess 39 Opening 41 Atomic layer 43 Protective layer 45 Etching Mask 47 Trimming Structure 49 Gap 51 Filled hollow spaces 53 Depression 55 Surface structure of the barrier layer 57 Lowest Point 59 Wall Sections of Filled Hollow Spaces 61 Resistive Layer Section 63 Resistive Layer Section 65 Barrier Layer Region 67 Section of the surface of the resistive layer 69 Section of the surface of the barrier layer 71 Carrier Surface 77 Edge 101 Career Offering 103 Install the connector 105 Applying a Resistive Layer 107 Cover the resistive layer with a barrier layer 109 Applying a Protective Layer 111 Wet chemical removal of barrier layers B1 width B2 width D Barrier layer thickness E Range Plane N1 Normal to the surface of the resistive layer N2 Normal to the surface of the resistive layer S direction

Claims

1. An electrical resistance component, the electrical resistance component comprising: an electrically insulating carrier; at least one resistive layer on the carrier; at least one electrical connector formed in the carrier and connected to the resistive layer; Including, the resistive layer has a surface structure along its surface facing away from the carrier; the resistive layer is covered by a barrier layer; the barrier layer comprises an inorganic material; An electrically resistive component, wherein the barrier layer reproduces the surface structure of the resistive layer continuously and with uniform thickness.

2. 2. An electrical resistance component according to claim 1, wherein the ratio between the minimum and maximum thickness of the barrier layer is greater than 0.8, in particular greater than 0.

9.

3. 2. The electrical resistance component of claim 1, wherein the thickness of the barrier layer is less than a surface roughness of the carrier and / or less than a roughness of the surface structure of the resistance layer.

4. 2. The electrical resistive component of claim 1, wherein the roughness of the surface structure of the barrier layer on the side of the barrier layer facing away from the resistive layer is less than the roughness of the surface structure of the resistive layer.

5. the surface structure of the resistive layer forms recesses, and the barrier layer covers the recesses continuously and with a uniform thickness; and / or 2. The electrical resistance component of claim 1, wherein the surface structure of the resistance layer forms an open hollow space having wall sections, the wall sections of each hollow space being disposed opposite each other with respect to the respective hollow space, and the barrier layer covers the wall sections of the respective hollow spaces.

6. 2. The electrical resistance component of claim 1, wherein the surface of the carrier facing the resistive layer forms at least one recess, the resistive layer has a gap in the area of the recess, and the barrier layer covers the recess of the carrier and the resistive layer present in the environment of the gap continuously and with a uniform thickness.

7. 2. The electrical resistance component of claim 1, wherein the barrier layer has a thickness of at most 1000 nanometers and / or the barrier layer has a thickness of at least 5 nanometers.

8. The electrical resistance component of claim 1 , wherein the barrier layer has an amorphous and / or semi-crystalline structure.

9. 2. The electrical resistance component of claim 1, wherein the barrier layer comprises a plurality of atomic layers that overlap and extend parallel to one another, and the plurality of atomic layers replicate the surface structure of the resistance layer.

10. 2. The electrical resistance component of claim 1, wherein the barrier layer comprises at least one layer having an amorphous structure and / or at least one layer having a semi-crystalline structure.

11. 2. The electrical resistance component of claim 1, wherein the barrier layer includes at least a first layer formed from a first material and at least a second layer formed from a second material, the first material and the second material being different from one another.

12. The electrical resistance component of claim 1 , wherein the barrier layer is formed on the resistive layer by atomic layer deposition.

13. The electrical resistance component of claim 1 , wherein the barrier layer is at least partially covered by a protective layer.

2. The electrical resistance component according to claim 1.

14. A method for manufacturing an electrical resistance component, in particular according to any one of claims 1 to 13, said method comprising the steps of: - providing an electrically insulating carrier; - attaching at least one electrical connector to said carrier; applying at least one resistive layer to the carrier, the resistive layer having a surface structure along its surface on the side facing away from the carrier; covering the resistive layer with a barrier layer, the barrier layer comprising an inorganic material, the barrier layer reproducing the surface structure of the resistive layer continuously and with a uniform thickness; A method comprising:

15. The method of claim 14 , wherein the barrier layer is applied to the resistive layer by atomic layer deposition.

16. The method of claim 15 , wherein the resistive layer is covered by multiple layers that collectively form the barrier layer.

17. 17. The method of claim 16, wherein a first layer of the plurality of layers is formed from a first material and a second layer of the plurality of layers is formed from a second material, the first material and the second material being different from one another.

18. The method of claim 14 wherein a protective layer is applied to the barrier layer.

19. 20. The method of claim 18, wherein the protective layer is applied to the barrier layer in a structured manner by screen printing.

20. 20. The method of claim 18, wherein the barrier layer is wet-chemically removed in the area of the connector, and the protective layer is used as an etch mask.

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