Direct atomic layer deposition and / or etching methods

Abstract

A method of atomic layer deposition and / or etching according to the present disclosure includes the steps of: writing a first longitudinally extending line on a substrate using a first precursor fluid, the first line having a first lateral linewidth; and writing a second longitudinally extending line on the substrate using a second precursor fluid, the first and second lines overlapping laterally by an amount less than the first and second linewidths, and / or the first and second lines being laterally spaced apart from one another by an amount less than the first and second linewidths, forming a first protrusion having a maximum lateral width less than the first and second linewidths, and / or forming a first recess having a maximum lateral width less than the first and second linewidths.

Description

[Technical Field]

[0001] The present invention relates to atomic layer deposition methods and the use thereof to fabricate nanostructures. [Background technology]

[0002] Atomic layer deposition (ALD) is a known technique for fabricating nanoscale structures by depositing thin films of process materials onto a substrate. ALD generally involves sequentially exposing a surface material (e.g., a substrate) to precursors and allowing the precursors to react with the surface material.

[0003] In area-selective ALD, thin layers of material are deposited on selected, predefined areas of a substrate, which can be achieved by using a specific deposition head configured to deposit a layer only locally on the substrate. By moving the deposition head relative to the substrate, a continuous layer of material can be obtained.

[0004] Atomic-scale resolution can be achieved in the Z direction, i.e., the direction perpendicular to the plane of the substrate, but the in-plane resolution in the XY plane, i.e., the plane parallel to the plane of the substrate, is limited to, for example, the order of 50 to 400 micrometers. Summary of the Invention [Problem to be solved by the invention]

[0005] The purpose is to improve the in-plane resolution of area-selective atomic layer deposition.

[0006] According to one aspect, an atomic layer deposition and / or atomic layer etching method, particularly a direct atomic layer deposition and / or atomic layer etching patterning method, is provided, comprising: using a first precursor fluid to write a first longitudinally extending line on a substrate, the first line having a first lateral linewidth; and using a second precursor fluid to write a second longitudinally extending line on the substrate, the first line partially overlapping the second line by a predetermined amount that is smaller than the first and second linewidths, and / or the first and second lines being laterally separated from each other by a predetermined amount that is smaller than the first and second linewidths, thereby forming a first protrusion having a maximum lateral width that is smaller than the first and second linewidths, and / or forming a first recess having a maximum lateral width that is smaller than the first and second linewidths. The first and second lines can be used to pattern directly on the substrate. Patterning can include deposition and / or etching. In particular, overlap and / or gaps allow for high-resolution patterning. The substrate can be a homogeneous substrate or a substrate containing different material layers and / or structures.

[0007] Optionally, drawing the first line includes depositing a first layer as the first line using a first precursor fluid, or etching a first trench as the first line using the first precursor fluid. Optionally, drawing the second line includes depositing a second layer as the second line using a second precursor fluid, or etching a second trench as the second line using the second precursor fluid. Thus, each line may be formed by either a deposited layer or an etched trench.

[0008] Thus, the atomic layer deposition method, particularly the area-selective atomic layer deposition method, provided by this aspect includes a step of depositing a first layer, e.g., on a substrate, using a first precursor fluid as a first longitudinally extending line having a first lateral linewidth; and a step of depositing a second layer, e.g., on a substrate, using a second precursor fluid as a second longitudinally extending line having a second lateral linewidth, wherein the first and second lines are deposited while partially overlapping laterally by a predetermined amount, forming a first protrusion at the overlapping portion, the first protrusion having a maximum lateral width smaller than the first and second linewidths; and the first and second lines are deposited while at least partially separated laterally from each other by a predetermined amount, forming a first recess at the gap portion, the first protrusion having a maximum lateral width smaller than the first and second linewidths.

[0009] Alternatively / additionally, the present embodiment provides an atomic layer etching method, particularly an area-selective atomic layer etching method, which may be similar to the atomic layer deposition method described herein, except that instead of depositing atomic layers, atomic trenches are etched, i.e., a material layer is selectively removed. The atomic layer etching method may include etching a first trench as a first longitudinally extending line using a first precursor fluid and having a first linewidth in the lateral direction; and etching a second trench as a second longitudinally extending line using a second precursor fluid, wherein the first and second lines are etched to partially overlap laterally by a predetermined amount to form a first recessed portion at the overlapping portion, the first recessed portion having a maximum lateral width smaller than the first and second linewidths; and wherein the first and second lines are etched at least partially laterally separated from each other by a predetermined amount to form a first protruding portion at the gap, the first protruding portion having a maximum lateral width smaller than the first and second linewidths.

[0010] The first line may be written, i.e., deposited or etched, using an ALD / ALE head. Here, ALD / ALE head refers to a head configured for atomic layer deposition (ALD) and / or atomic layer etching (ALE). The ALD / ALE head may be configured to deposit and / or etch spots using a first precursor fluid when the ALD / ALE head is stationary relative to the substrate. Thus, the ALD / ALE head may be different from another ALD / ALE head configured to deposit and / or etch lines using a first precursor fluid when the ALD / ALE head is stationary relative to the substrate. An ALD / ALE head that deposits and / or etches lines using a first precursor fluid when stationary relative to the substrate typically has an elongated deposition / etching slit and is used for blanket deposition / etching with the first precursor fluid when moving relative to the substrate. An ALD / ALE head that deposits and / or etches spots using a first precursor fluid while stationary relative to the substrate may have a deposition / etching nozzle with similar dimensions in all directions in a plane parallel to the substrate. The nozzle may be, for example, circular. An ALD / ALE head that writes spots using a first precursor fluid while stationary relative to the substrate may be used to deposit / etch a first layer as a line by moving the ALD / ALE head along the substrate, for example, in the longitudinal direction of the first line. It will be understood that the linewidth of the first layer may be determined by the dimensions of the nozzle. It will be apparent that because the ALD / ALE head deposits / etches spots while stationary relative to the substrate, the linewidth of the first layer may be substantially constant regardless of the direction (x direction, y direction, or a combination thereof) in which the ALD / ALE head moves relative to the substrate.

[0011] The second line may be written, i.e., deposited or etched, using an ALD / ALE head. The ALD / ALE head may be configured to deposit and / or etch spots using a second precursor fluid when the ALD / ALE head is stationary relative to the substrate. Thus, the ALD / ALE head may be different from another ALD / ALE head configured to deposit and / or etch lines using a second precursor fluid when the ALD / ALE head is stationary relative to the substrate. An ALD / ALE head that deposits and / or etches lines using a second precursor fluid when stationary relative to the substrate typically has an elongated deposition / etching slit and is used for blanket deposition / etching of the second precursor fluid when moving relative to the substrate. An ALD / ALE head that deposits and / or etch spots using a second precursor fluid when stationary relative to the substrate may have a deposition / etching nozzle with similar dimensions in all directions in a plane parallel to the substrate. The nozzle may be, for example, circular. An ALD / ALE head that writes spots using the second precursor fluid while stationary relative to the substrate may be used to deposit / etch the second layer as lines by moving the ALD / ALE head along the substrate, e.g., in the longitudinal direction of the second layer. It will be appreciated that the linewidth of the second layer may be determined by the dimensions of the nozzle. Because the ALD / ALE head deposits / etches spots while stationary relative to the substrate, it will be apparent that the linewidth of the second layer can be substantially constant regardless of the direction (x-direction, y-direction, or a combination thereof) in which the ALD / ALE head moves relative to the substrate.

[0012] Optionally, the first and second lines are deposited and / or etched using a single ALD / ALE head. In particular, if the first and second precursor fluids are the same, the same ALD / ALE head may be used to deposit / etch the first and second lines. Alternatively, a first ALD / ALE head may be used to deposit / etch the first line, and a second ALD / ALE head may be used to deposit / etch the second line.

[0013] Thus, the method enables the fabrication of, for example, three-dimensional features having widths in the XY plane parallel to the substrate that are smaller than the in-plane resolution of the individual deposited layers. The method takes advantage of the accurate and precise positioning of the ALD / ALE head relative to the substrate to improve the spatial resolution of the fabricated nanostructures compared to the structural resolution of individually deposited layers and / or etched grooves. The method can fabricate nanostructures of various shapes, including free-standing protrusions and depressions, such as linear and / or curved ridges, linear and / or curved grooves, that have dimensions in the XY plane that are substantially smaller than the XY dimensions of the individual first and second layers that form the protrusions and depressions.

[0014] For example, when a first layer and a second layer are deposited, a convex portion having a width smaller than that of the first layer and the second layer can be formed at the overlapping portion of the first layer and the second layer, and a concave portion having a width smaller than that of the first layer and the second layer can be formed in the gap between two adjacent layers.

[0015] Furthermore, for example, when etching the first and second grooves, a recess having a width smaller than that of the first and second grooves can be formed at the overlapping portion of the first and second grooves, and a protrusion having a width smaller than that of the first and second grooves can be formed in the gap between two adjacent grooves.

[0016] Also, for example, when a first line is deposited and a second line is etched, or vice versa, protrusions and recesses having widths smaller than the widths of the first and second lines can be formed.

[0017] The width of the protrusions and / or the width of the recesses can be controlled by controlling the position of one or more ALD / ALE heads that deposit / etch the first and second lines relative to the substrate. The positioning of the one or more ALD / ALE heads that deposit / etch the first and second lines relative to the substrate can be performed using a positioning system. The positioning system may be configured to move the ALD / ALE heads and / or the substrate. A controller may be configured to control the ALD / ALE heads and the positioning system. The controller may be configured to control the width of the protrusions and / or the width of the recesses. The width of the protrusions and / or the width of the recesses may be user-definable. A user may set the width of the protrusions and / or the width of the recesses, for example, through a user interface of the controller. In this manner, a variety of nanostructures can be fabricated, for example, using multiple superimposed layers.

[0018] The first and / or second lines may be deposited / etched by moving the ALD / ALE head and the substrate relative to one another in a longitudinal direction of the lines, with the ALD / ALE head configured to deposit / etch spots while stationary with respect to the substrate. The method may include independently controlling the position of the first line on the substrate and the position of the second line on the substrate. The width of the first protrusion or the first recess may be controlled by controlling the position of the second line on the substrate relative to the first line.

[0019] Each deposited / etched line may have a minimum width. The minimum width of the line may be defined in a direction perpendicular to the longitudinal direction of the line, which may correspond to the deposition / etching direction, e.g., the printing or writing direction. The deposition / etching direction may particularly relate to the direction in which the ALD / ALE head moves relative to the substrate while depositing material. The minimum width may be considered the smallest linewidth of the deposited / etched line. More specifically, the minimum width may be considered the smallest practically achievable linewidth that can be produced by an area-selective ALD / ALE system. It will be understood that the deposited / etched line may have a substantially constant width. The deposited / etched line may have a substantially constant width regardless of the orientation of the deposited / etched line on the substrate.

[0020] Deposition of layers and / or etching of trenches may be performed using an ALD / ALE system with an ALD / ALE printer head. Such an ALD / ALE system is described, for example, in WO 2020 / 245230 A1, which is incorporated herein by reference. The ALD / ALE head can be moved relative to the substrate to deposit / etch multiple lines in various patterns, creating various nanostructures including nanopillars, nanoridges, and nanoholes for use in, for example, fabricating microscale and nanoscale electromechanical, optoelectronic, or optomechanical systems, or combinations thereof.

[0021] The first layer / groove and the second layer / groove may partially overlap. Thus, the overlap between the first and second lines may extend over only a portion of the first line and a portion of the second line. Therefore, the overlap may not extend over the entire first or second line. For example, if only a portion of the second line overlaps the first line, only a portion of the first line will be covered by the second line. For example, the first line may include an overlapping region where the second line covers the first line and a non-overlapping region where the second line does not cover the first line. Thus, in this example, the second line may include an overlapping region where the second line covers the first line and a non-overlapping region where the second line does not cover the first line. The amount of overlap may be selected by appropriately positioning the ALD / ALE head relative to the substrate.

[0022] The amount of overlap may be predetermined, but does not include the entire line. The amount of overlap may be adjusted, for example, by appropriately positioning the ALD / ALE head and / or the substrate.

[0023] As an optional option, the maximum width of the first protrusion or first recess is at most 50% of the first line width or the second line width, preferably at most 25%, more preferably at most 10%, and even more preferably at most 5%.

[0024] Optionally, the first and second lines may extend parallel to each other along at least a portion of their length to form elongated first protrusions and / or first recesses. Thus, narrow ridges and narrow grooves can be created. When the first and second lines are deposited, a ridge is formed where the first and second lines overlap, and a groove is formed in the gap between the first and second lines. When the first and second lines are etched, a groove is formed where the first and second lines overlap, and a ridge is formed in the gap between the first and second lines. For example, the first and second layers may be deposited successively as parallel lines extending longitudinally and partially overlapping in the width direction perpendicular to the longitudinal direction. In this case, the second layer may partially overlap the first layer, or vice versa. Alternatively, the first and second layers may be deposited successively or simultaneously as parallel lines extending in the longitudinal direction and spaced apart in the width direction perpendicular to the longitudinal direction. The first and second lines may be straight and / or curved.

[0025] For example, one or more additional lines may be deposited and / or etched over the second line to form additional ridges or grooves, thus forming multiple parallel ridges and / or grooves, each having a width smaller than the width of an individual deposited line.

[0026] The first and second lines may be deposited / etched as non-parallel lines, e.g., curved lines that overlap at one or more locations. The first and second layers or grooves may also be deposited or etched as non-parallel lines, e.g., curved lines that overlap at one or more locations.

[0027] Optionally, a first layer or groove is deposited or etched as a first line having a constant first line width, and a second layer or groove is deposited or etched as a second line having a constant second line width. The first and second line widths may be equal or different. The line width is defined in the XY plane, particularly in a direction perpendicular to the line length, determined, for example, by the printing direction, and depends on the characteristics of the deposition / etching head.

[0028] Optionally, the first line includes a straight portion and / or the second line includes a straight portion. The first and second lines may, for example, extend straight and parallel to each other.

[0029] Optionally, the first layer is a layer of a first material and the second layer is a layer of a second material different from the first material. Optionally, the first precursor fluid is a first material and the second precursor fluid is a second material. This allows for the formation of multi-material structures, for example, to form conductive or insulating pathways for directing charge transport or to form photoactive surfaces for generating and transporting charge carriers. The use of different materials allows for the tailoring of the electronic, mechanical, and optical properties of the resulting nanostructures.

[0030] Optionally, the first line is deposited or etched at a first temperature and the second line is deposited or etched at a second temperature different from the first temperature.

[0031] Optionally, a first layer of a first material is deposited at a first temperature and a second layer of a second material is deposited at a second temperature different from the first temperature.

[0032] Optionally, the method includes using a third precursor fluid to write a third longitudinally extending line having a third line width in the lateral direction, the third line partially overlapping the second line in the lateral direction by a predetermined amount, and forming second protrusions and / or second recesses having maximum widths smaller than the first, second and third line widths.

[0033] Optionally, delineating the third line includes depositing or etching a third layer or a third trench as the third line using a third precursor fluid.

[0034] Optionally, the method includes depositing a third layer using a third precursor fluid, the third layer being deposited as a third longitudinally extending line having a third lateral linewidth, the third line being deposited to laterally overlap the second line by a predetermined amount, e.g., forming a second protrusion or a second recess at the overlapping portion with the second line, the second protrusion or recess having a maximum width smaller than the first, second, and third linewidths.

[0035] Optionally, the method includes etching a third groove using a third precursor fluid. The third groove may be etched as a third longitudinal line having a third lateral linewidth, the third line being etched to laterally overlap the second line by a predetermined amount, e.g., forming a second protrusion or second recess at the overlap with the second line, the maximum width of which is smaller than the first, second, and third linewidths. The third line may be similar to the first or second line. Therefore, features described with respect to the first or second line are equally applicable to the third line.

[0036] For example, the first, second, and third layers and / or trenches may be deposited and / or etched successively as parallel lines extending longitudinally and overlapping in a width direction perpendicular to the longitudinal direction, where the second layer overlaps the first layer and the third layer overlaps the second layer. The amount of overlap can be predetermined, for example, by appropriately positioning the ALD / ALE head when depositing and / or etching the layers and / or trenches.

[0037] Optionally, the width of the second protrusions and / or second recesses is equal to the width of the first protrusions and / or first recesses, thereby forming a regular pattern of overlapping layers, for example forming ridges.

[0038] Optionally, the third layer may overlap the first layer by a predetermined amount. This allows the third layer to overlap the first and second layers, for example, to form a stepped structure. It will be understood that the third layer need not be in contact with the first layer. For example, the third layer may be deposited on a portion of the second layer that is deposited on a portion of the first layer. For example, there may be an overlap region where the first, second, and third layers overlap, with the layers stacked at the overlap.

[0039] Optionally, the overlapping amount between the third layer and the first layer is smaller than the overlapping amount between the first layer and the second layer, thereby forming a stepped structure.

[0040] Optionally, the lateral distance between the first protrusion and the second protrusion is less than the first, second, or third linewidth. Optionally, the lateral distance between the first recess and the second recess is less than the first, second, or third linewidth. This allows multiple nanostructures, such as multiple ridges and / or trenches, to be fabricated in a space (X and / or Y) that is smaller than the minimum linewidth of the ALD / ALE head.

[0041] Optionally, the third line is laterally spaced apart from the first line, and therefore does not overlap the first line. In this manner, for example, when the first line, the second line, and the third line are deposited, a recess having a width smaller than the width of the first, second, or third line may be formed between the overlapping region where the first and second lines overlap and the overlapping region where the second and third lines overlap.

[0042] Optionally, the method includes using a fourth precursor fluid to write a fourth longitudinally extending line having a fourth line width in the lateral direction, the fourth line being spaced laterally from the second line by a predetermined amount, and forming a third recess and / or a third protrusion having a maximum width smaller than the first, second and fourth line widths.

[0043] Optionally, the method includes depositing and / or etching a fourth layer or trench using a fourth precursor fluid, the fourth layer or trench being deposited or etched as a fourth line.

[0044] Optionally, the method includes depositing a fourth layer using a fourth precursor fluid, the fourth layer being deposited as a fourth longitudinally extending line having a fourth lateral linewidth, the fourth line being deposited at least partially spaced laterally from the second line by a predetermined amount, and a third recess being formed in a gap between the fourth line and the second line, the third recess having a maximum width smaller than the first, second, and fourth linewidths.

[0045] Optionally, the method includes etching a fourth groove using a fourth precursor fluid, the fourth groove being etched as a fourth line extending longitudinally and having a fourth linewidth in the lateral direction, the fourth line being at least partially spaced laterally from the second line by a predetermined amount less than the first, second, and fourth linewidths. Thus, the fourth line may be spaced apart from the second line, and the second line may overlap or be spaced apart from the first line. For example, the first, second, and fourth layers may be deposited successively as parallel lines extending longitudinally, with the first and second lines overlapping in a width direction perpendicular to the longitudinal direction. In this case, the second line partially overlaps the first line, and the fourth line is laterally spaced apart from the second line in the width direction to define a gap between the fourth line and the second line having a gap width smaller than the smallest width of any of the deposited lines. Alternatively, for example, the first, second, and fourth layers may be deposited sequentially or simultaneously as parallel lines extending adjacent to one another in the longitudinal direction, with the first, second, and fourth layers being laterally spaced apart from one another in the width direction perpendicular to the longitudinal direction. The spacing between successive layers may be equal, for example, to form a regular pattern of depressions.

[0046] It will be appreciated that the ALD / ALE method may include depositing and / or etching multiple first, second, third and / or fourth layers and / or trenches depending on thickness requirements in the Z direction, orthogonal to the plane of the substrate.

[0047] The method may include, for example, stacking multiple first layers in the Z direction and / or stacking multiple second layers in the Z direction. The stacking may be performed in the positive Z direction, depositing multiple layers on top of each other, or in the negative Z direction, etching multiple grooves underneath each other. Misalignment of the edges of individual stacked layers or grooves may result in slightly slanted edges of the nanostructure. The mutual offset or overlap of the slanted edges can be used to create recesses or protrusions. For example, recesses or protrusions may be formed between a stacked first layer or groove and a stacked second layer or groove. When stacking multiple layers or grooves of the same width in the Z direction, the lateral misalignment can be used to create the shape of the sidewalls of the nanostructure. The shape of the sidewalls of the nanostructure can also be created by stacking multiple lines of different widths.

[0048] Optionally, the ALD / ALE method may include, after depositing the first, second, third, and / or fourth layers, selectively removing at least a portion of any one of the first, second, third, and fourth layers. In this manner, for example, cavities may be formed within the nanostructure. One or more of the deposited layers may be sacrificial layers intended for removal. The layers may be removed, for example, by etching. For example, material-selective etching may be used when the deposited layers are made of different materials.

[0049] According to another aspect, an atomic layer deposition and / or etching method is provided, comprising: using a fifth precursor fluid to write a fifth longitudinally extending line having a fifth lateral linewidth; and using a sixth precursor fluid to write a sixth longitudinally extending line having a sixth lateral linewidth, wherein the fifth and sixth lines extend longitudinally in a different direction than the first and second lines, and the fifth and sixth lines laterally overlap by a predetermined amount that is smaller than the fifth and sixth linewidths, and / or the fifth and sixth lines are laterally spaced apart by a predetermined amount that is smaller than the fifth and sixth linewidths, thereby forming a fourth protrusion having a maximum lateral width that is smaller than the fifth and sixth linewidths, and / or forming a fourth recessed portion having a maximum lateral width that is smaller than the fifth and sixth linewidths. The fifth and / or sixth lines may extend, for example, orthogonally, diagonally, or in other different directions relative to the first and / or second lines.

[0050] Thus, the atomic layer deposition and / or etching method provided by this embodiment includes depositing or etching a fifth layer or trench as a fifth longitudinally extending line having a fifth lateral linewidth using a fifth precursor fluid, and depositing or etching a sixth layer or trench as a sixth longitudinally extending line having a sixth lateral linewidth using a sixth precursor fluid, the fifth and sixth lines extending longitudinally in a different direction than the first and second lines. The fifth and / or sixth lines may extend, for example, orthogonally, diagonally, or in another different direction relative to the first and / or second lines.

[0051] Thus, the atomic layer deposition method provided by this embodiment includes depositing a fifth layer, e.g., on a substrate, using a fifth precursor fluid as a fifth longitudinally extending line having a fifth lateral linewidth, and depositing a sixth layer, e.g., on a substrate, using a sixth precursor fluid as a sixth longitudinally extending line having a sixth lateral linewidth, the fifth and sixth lines extending longitudinally in a different direction than the first and second lines. The fifth and / or sixth lines may extend, for example, orthogonally, diagonally, or in another different direction relative to the first and / or second lines. The fifth and sixth lines are deposited so as to partially overlap each other laterally by a predetermined amount, and a fourth protrusion having a maximum lateral width smaller than the fifth or sixth line width is formed in the overlapping portion, and / or the fifth and sixth lines are deposited so as to be at least partially spaced apart laterally from each other by a predetermined amount, and a fourth recess having a maximum lateral width smaller than the fifth or sixth line width is formed in the gap portion.

[0052] The atomic layer etching method according to the present invention also includes etching a fifth trench as a fifth longitudinal line using a fifth precursor fluid and having a fifth linewidth in the lateral direction, and etching a sixth trench as a sixth longitudinal line using a sixth precursor fluid, the fifth and sixth lines extending in the lateral direction having a sixth linewidth in the lateral direction, the fifth and sixth lines extending in a different longitudinal direction than the first and second lines. The fifth and / or sixth lines may extend in a different direction, for example, orthogonal, diagonal, or in another different direction, relative to the first and / or second lines. The fifth and sixth lines are etched while partially overlapping laterally by a predetermined amount, and a fourth recess is formed in the overlapping portion, the maximum width of which is smaller than the fifth line width or the sixth line width; and / or the fifth and sixth lines are deposited while at least partially separated laterally from each other by a predetermined amount, and a fourth protrusion is formed in the gap portion, the maximum width of which is smaller than the fifth line width or the sixth line width.

[0053] It will be appreciated that the ALD / ALE method may include depositing and / or etching multiple first, second, third, fourth, fifth and / or sixth layers and / or trenches depending on thickness requirements in the Z direction, orthogonal to the plane of the substrate.

[0054] According to another aspect, there are provided nanostructures obtained by the atomic layer deposition and / or etching methods described herein.

[0055] In particular, nanostructures are provided that include nanostructures obtained by atomic layer deposition and / or etching, where a material layer is deposited and / or trenches are etched as longitudinally extending material lines having a lateral linewidth, and the material structures have a maximum lateral width that is smaller than the linewidth of the lines.

[0056] Optionally, the nanostructure comprises a first line drawn using a first precursor fluid and extending longitudinally with a first line width in the lateral direction, and a second line drawn using a second precursor fluid and extending longitudinally with a second line width in the lateral direction, wherein the first line and the second line partially overlap laterally by a predetermined amount that is smaller than the first line width and the second line width, and / or the first line and the second line are at least partially separated laterally from each other by a predetermined amount that is smaller than the first line width and the second line width, thereby forming a first protrusion having a maximum lateral width that is smaller than the first line width and the second line width, and / or forming a first recessed portion having a maximum lateral width that is smaller than the first line width and the second line width.

[0057] Optionally, drawing the first line comprises depositing or etching a first layer or trench as the first line using a first precursor fluid, and drawing the second line comprises depositing or etching a second layer or trench as the second line using a second precursor fluid.

[0058] Optionally, the nanostructure includes a first layer deposited using a first precursor fluid as a first longitudinally extending line having a first laterally extending linewidth, and a second layer deposited using a second precursor fluid as a second longitudinally extending line having a second laterally extending linewidth, the first and second lines partially overlapping laterally by a predetermined amount to form a first protrusion at the overlapping portion having a maximum lateral width smaller than the first and second linewidths, and / or the first and second layers at least partially spaced laterally from one another by a predetermined amount to form a recess at the gap having a maximum lateral width smaller than the first and second linewidths.

[0059] Optionally, the nanostructure includes a first trench etched using a first precursor fluid as a first longitudinally extending line having a first laterally extending linewidth, and a second trench etched using a second precursor fluid as a second longitudinally extending line having a second laterally extending linewidth, wherein the first and second lines partially overlap laterally by a predetermined amount to form a first recess at the overlapping portion having a maximum lateral width smaller than the first and second linewidths, and / or the first and second trenches are at least partially laterally separated from each other by a predetermined amount to form a protrusion at the gap having a maximum lateral width smaller than the first and second linewidths.

[0060] According to one aspect, a method of atomic layer deposition and / or etching is provided, for example, according to any method described herein. The method includes depositing and / or etching a plurality of layers and / or trenches as parallel lines extending longitudinally and at least partially overlapping longitudinally, with ends of the lines being longitudinally shifted relative to one another by a predetermined amount to form a material layer having a thickness that varies longitudinally. For example, the lines may have different lengths and / or may be shifted relative to one another. Thus, the overlapping lines can increase and / or decrease the thickness of the material layer in a stepwise manner longitudinally. The thickness of the material may, for example, increase or decrease gradually.

[0061] It will be understood that the methods described herein may be performed using an atomic layer deposition system and / or an atomic layer etching system. An exemplary ALD / ALE system may include a substrate plate for holding a substrate and an ALD / ALE head, e.g., a printer head, disposed opposite the substrate plate. The ALD / ALE head may include a plurality of openings, including one or more first outlet openings, provided, for example, in the head plate, and one or more first supply channels connected to the first outlet openings and directing a first precursor fluid onto the substrate through the first outlet openings. Each of the one or more first outlet openings may be configured to supply the first precursor fluid as a spot when the ALD / ALE head is stationary relative to the substrate plate. Each of the one or more first outlet openings may have equivalent dimensions in all directions in a plane parallel to the substrate plate. The one or more first outlet openings may be circular.

[0062] The system may also include one or more second outlet openings and one or more second supply channels connected to the second outlet openings and directing the second precursor fluid onto the substrate through the second outlet openings. Each of the one or more second outlet openings may be configured to deliver the second precursor fluid as a spot when the ALD / ALE head is stationary relative to the substrate plate. Each of the one or more second outlet openings may have equal dimensions in all directions in a plane parallel to the substrate plate. The one or more second outlet openings may be circular. The system may also include one or more third outlet openings and one or more third supply channels connected to the third outlet openings and directing the inert fluid onto the substrate through the third outlet openings.

[0063] The ALD / ALE head may be movable relative to the substrate plate, e.g., along an axis in an XY plane defined by mutually orthogonal X and Y axes, and optionally along a Z axis perpendicular to the XY plane. The system may include a positioning system configured to move the ALD / ALE head and / or the substrate.

[0064] According to one aspect, an atomic layer deposition and / or etching system, particularly a patterning system, is provided. The system includes a substrate plate configured to support a substrate and an ALD / ALE head configured to write, e.g., deposit and / or etch, a first line and / or a second line on the substrate, the first line extending longitudinally with a first linewidth in the lateral direction, and the second line extending longitudinally with a second linewidth in the lateral direction. The system includes a positioning system that positions the ALD / ALE head and the substrate relative to one another. The system includes a controller that controls the ALD / ALE head and positioning system such that the first and second lines are drawn to partially overlap in the lateral direction by a predetermined amount that is smaller than the first and second line widths, and / or such that the first and second lines are drawn to be at least partially separated in the lateral direction from each other by a predetermined amount that is smaller than the first and second line widths, thereby forming a first protrusion or recess in the overlapping portion, the first protrusion or recess having a maximum lateral width that is smaller than the first and second line widths, and / or forming a first recess and / or protrusion in the gap, the first recess and / or protrusion having a maximum lateral width that is smaller than the first and second line widths.

[0065] Optionally, the ALD / ALE head is configured to deposit and / or etch the spots while stationary relative to the substrate, and the controller is configured to move the ALD / ALE head and the substrate relative to one another along the length of the lines while depositing and / or etching the first line and / or the second line.

[0066] Optionally, the controller is configured to control the width of the first protrusion or the first recess by controlling the position on the substrate of the second line relative to the first line.

[0067] Optionally, the controller is configured to separately control the position on the substrate of the first line and the position on the substrate of the second line.

[0068] The same ALD / ALE head may be used to write the first line and the second line. Alternatively, a first ALD / ALE head may be used to write the first line and a second ALD / ALE head may be used to write the second line. The first and second ALD / ALE heads may be the same.

[0069] It will be understood that any of the aspects, features, and options described herein may be combined singly or in combination, and in particular, any of the aspects, features, and options described in terms of atomic layer deposition methods apply equally to nanostructures and systems, and vice versa. [Brief explanation of the drawings]

[0070] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. [Figure 1A] 1A-1C are schematic cross-sectional views of exemplary nanostructures formed by atomic layer deposition and / or etching methods. [Figure 1B] 1A-1C are schematic cross-sectional views of exemplary nanostructures formed by atomic layer deposition and / or etching methods. [Figure 2] 1A-1C are schematic cross-sectional views of exemplary nanostructures formed by atomic layer deposition and / or etching methods. [Figure 3] 1A-1C are schematic cross-sectional views of exemplary nanostructures by atomic layer deposition and / or etching methods. [Figure 4A] 1A-1C are schematic diagrams illustrating the formation of exemplary nanostructures using atomic layer deposition and / or etching methods. [Figure 4B]1A-1C are schematic diagrams illustrating the formation of exemplary nanostructures using atomic layer deposition and / or etching methods. [Figure 4C] 1A-1C are schematic diagrams illustrating the formation of exemplary nanostructures using atomic layer deposition and / or etching methods. [Figure 5A] 1A-1C are schematic diagrams illustrating the formation of exemplary nanostructures using atomic layer deposition and / or etching methods. [Figure 5B] 1A-1C are schematic diagrams illustrating the formation of exemplary nanostructures using atomic layer deposition and / or etching methods. [Figure 5C] 1A-1C are schematic diagrams illustrating the formation of exemplary nanostructures using atomic layer deposition and / or etching methods. [Figure 6] FIG. 1 shows images of exemplary nanostructures. [Figure 7] FIG. 1 shows images of exemplary nanostructures. [Figure 8] FIG. 1 shows images of exemplary nanostructures. [Figure 9] FIG. 1 shows images of exemplary nanostructures. [Figure 10] FIG. 1 shows images of exemplary nanostructures. [Figure 11] FIG. 1 illustrates an example of a system. DETAILED DESCRIPTION OF THE INVENTION

[0071] 1A and 1B are schematic cross-sectional views of exemplary nanostructures obtained by atomic layer deposition (ALD / ALE) showing a first layer 100 being deposited on selective first regions of a substrate 50. The first layer 100 may be deposited using a deposition head, for example, as described in WO 2020 / 245230 A1.

[0072] In this example, the first layer 100 has an atomic-scale thickness measured in the Z direction. In the plane of the substrate (the XY plane), the first layer 100 has a first width, here measured in the X direction. In this example, the first width is about 50 micrometers.

[0073] After depositing the first layer 100, a second layer 200 is deposited in a selective second area of ​​the substrate different from the first area where the first layer 100 was deposited. In this example, the second layer 200 has an atomic-scale thickness measured in the Z direction. In the plane of the substrate (the XY plane), the second layer 200 has a second width, here measured in the X direction. In this example, the second width is about 50 micrometers.

[0074] 11 , an atomic layer deposition (ALD) and / or atomic layer etching (ALE) system 600 (hereinafter referred to as ALD / ALE system 600) is used to deposit the layer, where ALD / ALE system 600 includes an ALD / ALE head 610 and a substrate plate 620 for supporting a substrate 50. ALD / ALE system 600 includes a positioning system 630 configured to move ALD / ALE head 610 relative to substrate 50.

[0075] The ALD / ALE head 610 is configured to deposit a first and / or second layer by directing a flow of a first and / or second precursor fluid 640 to the substrate 50. Alternatively or additionally, the ALD / ALE head 610 may be configured to etch a first and / or second trench in the substrate by directing a flow of a first and / or second precursor fluid 640 to the substrate 50.

[0076] Here, ALD / ALE system 600 includes a controller configured to control ALD / ALE head 610 and positioning system 630. Accordingly, controller 650 may determine the locations on the substrate where the ALD / ALE head deposits first and / or second layers or etches first and / or second trenches.

[0077] In this example, the first layer 100 is deposited using an ALD / ALE head 610. The ALD / ALE head is configured to deliver a first precursor to the substrate as a spot while the ALD / ALE head is stationary relative to the substrate 50. The spot size is substantially equal to a first width, where the deposition or etching spot size on the substrate is approximately 50 micrometers in diameter. Here, the spot has similar dimensions in all directions on the substrate. In this example, the spot is approximately circular. By moving the ALD / ALE head 610 relative to the substrate 50 while continuously delivering the first precursor, a line is deposited or etched having a first width, here approximately 50 micrometers, and a length (here, in the Y direction) determined by the relative movement of the ALD / ALE head with respect to the substrate plate. Thus, the ALD / ALE system enables patterning on the substrate by deposition and / or etching. In this example, the second layer 200 is deposited using the same or a different ALD / ALE head. The ALD / ALE head is configured to deliver the second precursor to the substrate as a spot while the ALD / ALE head is stationary relative to the substrate. The spot size is substantially equal to the second width. Here, the deposition or etching spot size on the substrate is about 50 micrometers in diameter. Here, the spot has equal dimensions in all directions on the substrate. In this example, the spot is approximately circular. By moving the ALD / ALE head relative to the substrate while continuously delivering the second precursor, a line is deposited or etched having a second width, here about 50 micrometers, and a length (here, the length in the Y direction) determined by the relative movement of the ALD / ALE head with respect to the substrate plate. Thus, the ALD / ALE system enables patterning on the substrate by deposition and / or etching. A positioning system may be provided for positioning the ALD / ALE head with respect to the substrate plate.The controller 650 may be configured to position the second line relative to the position of the first line such that the second line laterally overlaps the first line by a certain amount, thereby forming a first protrusion at the overlapping portion during deposition, the first protrusion having a maximum lateral width smaller than the first and second line widths. Alternatively or additionally, the controller 650 may be configured to position the second line relative to the position of the first line such that the first and second lines are spaced apart by a certain amount, thereby forming a first recess at the overlapping portion during deposition, the first recess having a maximum lateral width smaller than the first and second line widths. The controller 650 may be configured to position the first and / or second lines as straight lines, curved lines, continuous lines having straight and / or curved portions, etc.

[0078] 1A, the second layer 200 partially overlaps the first layer 100. This creates an overlap region 150 between the first layer 100 and the second layer 200. Because the first layer 100 and the second layer 200 only partially overlap, the first layer 100 and the second layer 200 also include non-overlapping regions where the layers do not overlap.

[0079] In the overlap region 150, the thickness of the deposited material corresponds to the sum of the thickness of the first layer and the thickness of the second layer, thus forming a protrusion 160 in the overlap region 150. Outside the overlap region 150, the thickness of the deposited material is smaller, e.g., to the thickness of either the first layer or the second layer.

[0080] The width of the protrusion 160 in the X direction can be adjusted, for example, by appropriately positioning the ALD / ALE head relative to the first layer when depositing the second layer. The width of the protrusion formed by the overlapping layers is smaller than the widths of the first layer 100 and the second layer 200.

[0081] In this example, the first layer 100 and the second layer 200 are deposited as first and second lines, respectively, extending longitudinally (here, the Y direction) into the plane of FIG. 1 . The width of the layers in the X direction is substantially fixed and depends on the characteristics of the deposition head 610. In particular, the width of the layers in the X direction depends on the spot size of the deposition by the ALD / ALE head. Line structures can be deposited by longitudinally moving the deposition head relative to the substrate 50 while depositing material. Thus, the length of the first layer in the Y direction can be adjusted by the relative movement between the substrate 50 and the deposition head 610. Thus, in this example, the overlap region 150 forms a ridge extending longitudinally into the plane of FIG. 1 . It will be understood that the nanostructure may include multiple first and second layers stacked according to thickness requirements in the Z direction.

[0082] 1B, the first layer 100 and the second layer 100 are spaced apart from each other to form a gap 120 therebetween. The gap 120 has a gap width that is smaller than the widths of the first layer 100 and the second layer 200. The gap width can be predetermined, for example, using an ALD / ALE head. This forms a recess 170 between the first layer 100 and the second layer 200.

[0083] In this example, a third layer 300 is also deposited, where the third layer 300 overlaps the first layer 100 and the second layer 200. In this example, a recess is formed between the two overlapping regions, i.e., between the overlapping region of the third layer 300 with the first layer 100 and the overlapping region of the third layer 300 with the second layer 200. The width of the recess is equal to the gap width. It will be understood that the nanostructure may include multiple first, second, and third layers stacked according to thickness requirements in the Z direction.

[0084] FIG. 2 is a schematic cross-sectional view of another exemplary nanostructure obtained by atomic layer deposition (ALD / ALE), which is similar to the nanostructure shown in FIG. 1 . In this example, the overlapping area 150 between the first layer 100 and the second layer 200 is larger than the overlapping area 150 in the example shown in FIG. 1 . Also, a third layer 300 is deposited, and the third layer 300 partially overlaps the second layer 200. In this example, the overlapping area 150 is equal to the overlapping area 250 between the third layer 300 and the second layer 200 to form a regular pattern. In this example, the third layer 300 also partially overlaps the first layer 100. Thus, at the overlapping portions of the overlapping area 150 and the overlapping area 250, the first layer, the second layer, and the third layer are stacked in the Z direction.

[0085] Further, a fourth layer 400 is deposited, and similarly, the fourth layer 400 partially overlaps the third layer 300, and its overlapping area 350 here is equal to the above-mentioned overlapping areas 150, 250. The fourth layer 400 also partially overlaps the second layer 200. It will be understood that the nanostructure can be expanded by adding more layers. It will be understood that the nanostructure may include multiple first, second, and third layers stacked according to thickness requirements in the Z direction.

[0086] Thus, an array of overlapping layers is deposited to form nanostructures with a substantially flat upper surface and, for example, regularly stepped edges.

[0087] 3 shows an exemplary nanostructure in which multiple first layers 100 and multiple second layers 200 are stacked in the Z direction to form first stack 110 and second stack 210, respectively. In this example, second stack 210 of stacked second layers 200 partially overlaps first stack 110 of stacked first layers 100. Misalignment of the edges of the individual layers of each stack may result in a slight slope at the edges of the stack.

[0088] Lateral misalignment of the stacked layers can be used to shape the sidewalls of the nanostructures. For example, the individual layers of the stack can be laterally offset relative to one another. By overlapping the stacked layers, various nanostructures can be created.

[0089] 3, the first stack 110 includes eight first layers 100, and the second stack 210 includes eight second layers 200 of the same width, with the second stack 210 partially overlapping the first stack 110. A recess whose width varies in the Z direction is formed between the two stacks.

[0090] 4A-4C illustrate an exemplary ALD / ALE process, in which, in a first stage shown in FIG. 4A, multiple (here, four) layers are successively deposited in overlapping lines extending longitudinally in the Y direction, where the lines are parallel and extend into the plane of the figure. Each line is deposited partially on top of the previously deposited line. Thus, each line partially overlaps its adjacent line in the lateral direction (here, the X direction), and in the overlap region, an array of parallel ridges, in this example three, is formed, each ridge having a width much smaller than the linewidth of the deposited line.

[0091] In the second stage of the exemplary method shown in FIG. 4B , multiple (here, four) layers are deposited on top of the layer deposited in the first stage as lines extending longitudinally in the Y direction. More specifically, in this example, the first and second stages of the method are similar, but in the second stage, the lines are shifted laterally in the X direction by a predetermined amount, thereby forming an array of parallel ridges between the ridges formed in the first stage of the method. Thus, in this example, two ridges are formed within the width of a single deposited line. More generally, it will be appreciated that this method can fabricate multiple (e.g., 2, 3, 4, 5, 6, 8, 10, 20, or more) nanostructures, e.g., multiple ridges or other structures, in a space (X and / or Y) smaller than the minimum linewidth of the ALD / ALE head.

[0092] In this example, the third and fourth stages of the exemplary method essentially repeat the first and second stages, respectively, by changing the longitudinal orientation of the deposited lines (in this example, rotating them 90 degrees about the Z axis). Thus, in this example, in the first and second stages, the deposited lines extend longitudinally in the Y direction, and in the third and fourth stages, the deposited lines extend longitudinally in the X direction. It will be appreciated that in the third and fourth stages, the lines may be oriented in other directions rather than orthogonally.

[0093] FIG. 4C shows a schematic height map of the superimposed lines. A nanostructure with a varying thickness profile is created. In this example, a lattice of freestanding nanopillars is formed, regularly distributed in the XY plane, with each nanopillar's width dimension in the XY plane being much smaller than the width dimension of the individually deposited lines. The nanopillars are formed by stacking six layers in this example. The nanopillars are formed specifically at the intersections of the ridges, each of which has a width smaller than any of the deposited lines. It will be apparent that the method steps may be repeated in the example of FIGS. 4A-4C, for example, to increase the thickness of the structure in the Z direction.

[0094] 5A is a schematic cross-sectional view of another exemplary nanostructure obtained by atomic layer deposition and / or etching methods. In this example, a blanket layer 100 is deposited on a substrate. A first groove 200 and a second groove 300 are etched as first and second lines, respectively, with a gap 120 between the first and second grooves. The etching of the first groove 200 and the second groove 300 selectively removes material from the blanket layer 100. A free-standing protrusion is formed in the center of the substrate 50, in the gap 120 between the first groove 200 and the second groove 300. Two additional free-standing protrusions are also formed at both lateral ends of the first line 100.

[0095] FIG. 5B is a schematic cross-sectional view of another exemplary nanostructure obtained by atomic layer deposition and / or etching. Here, a first layer 100 is deposited as a first line, a second layer 200 is deposited as a second line, and a gap is provided between the first layer 100 and the second layer 200 to define a gap 120. Here, a third groove 300 and a fourth groove 400 are etched as a third line and a fourth line, respectively. Etching the third line 300 and the fourth line 400 removes material from the first layer 100 and the second layer 200, respectively, resulting in two free-standing protrusions, each with an equal width 150, separated by the gap 120. The two free-standing protrusions have widths smaller than the line widths of the first, second, third, and fourth lines. The width of the gap 120 is also smaller than the line widths of the first, second, third, and fourth lines. Here, the first, second, third and fourth lines have equal line widths.

[0096] 5C is a schematic cross-sectional view of another exemplary nanostructure obtained by atomic layer deposition and / or etching. Here, first layer 100 and second layer 200 are deposited as relatively wide first and second lines, respectively, so as to overlap each other, i.e., stacked. Third groove 300 and fourth groove 400 are now etched as overlapping third and fourth lines, respectively. Here, a recess having a width smaller than the third and fourth line widths is formed in the overlapping portion 150 in the center of substrate 50.

[0097] Figure 6 shows an imaging ellipsometry map of an exemplary nanostructure formed by an array of layers deposited as parallel, non-overlapping lines, with recesses between each line that are significantly smaller than the linewidth of the individually deposited lines. Furthermore, in this example, a material gradient is formed along the direction of the deposited lines. Here, the length of the deposited lines in the Y direction gradually decreases, resulting in a gradual change in material thickness. Thus, in this example, the nanostructure has a slope. It will be appreciated that lines of gradually decreasing length may be deposited in any desired order to achieve a gradual change in material thickness.

[0098] Figure 7 shows an imaging ellipsometry map of an exemplary nanostructure formed by an array of overlapping layers. The deposited layers are deposited as overlapping parallel lines extending in a single direction. The thickness of the deposited structure increases stepwise at the left and right edges, with plateaus of constant thickness in the X direction between them. In this example, the plateaus are reached by eight thickness steps from the left and right edges. In this example, the combined width of these eight thickness steps corresponds to the linewidth of a single deposited line. The deposited structure in Figure 7 also shows a gradual change in material thickness in the Y direction. Furthermore, the dark lines in the Y direction indicate where gaps exist between adjacent lines, creating depressions in the deposited structure.

[0099] Figure 8 shows a height map image of an exemplary nanostructure formed by an array of overlapping layers. The deposited lines extend in two orthogonal directions, forming a raster-like structure of protrusions and depressions, as described in connection with Figures 4A-4C. In this example, the thickness of the deposited structure increases stepwise at the left, right, top, and bottom edges, with plateaus of constant thickness in between. In this example, the plateaus are reached in eight thickness steps from the left, right, top, and bottom edges. In this example, the combined widths of these eight thickness steps correspond to the linewidth of a single deposited line. Additionally, the lighter colored lines in the X and Y directions indicate where specific overlaps of the deposited lines form ridges on the plateaus.

[0100] FIG. 9 is an imaging ellipsometry map of a close-up of a nanostructure that has a raster-like pattern of protrusions (light lines) and depressions (dark lines) similar to the nanostructure shown in FIG.

[0101] FIG. 10 is another imaging ellipsometry map of the nanostructures up close, specifically the interstitial regions between successively deposited atomic beams.

[0102] While the present invention has been described above with reference to specific examples of its embodiments, it will be apparent that various modifications and variations are possible without departing from the spirit and scope of the present invention. Although, for clarity and conciseness of description, features have been described herein as part of the same or separate embodiments, alternative embodiments having all or a partial combination of the features described in those separate embodiments are also contemplated.

[0103] In the examples, the layers are deposited as straight lines, but it will be appreciated that alternatively or additionally, curved lines may be deposited, and the lines may be deposited overlapping and / or spaced apart along part of their length.

[0104] Other modifications, variations, and substitutions are also possible. The specification, drawings, and examples are therefore to be regarded as illustrative rather than restrictive.

[0105] Although, for clarity and conciseness of description, features are described herein as part of the same or separate embodiments, it will be understood that the scope of the present invention may include embodiments having all or any combination of the described features.

[0106] In the claims, reference signs in parentheses shall not be interpreted as limiting the scope of the claims. The word "comprising" does not exclude the presence of features or steps other than those listed in a claim. Moreover, the words "a" and "an" shall not be interpreted as restricting to "one and only one" but rather as meaning "at least one" and not as excluding a plurality. The mere fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to advantage.

Claims

1. writing a first longitudinally extending line on a substrate using a first precursor fluid and having a first linewidth in the lateral direction; and writing a second longitudinally extending line on the substrate using a second precursor fluid and having a second lateral linewidth; the first line and the second line partially overlap laterally by a predetermined amount that is smaller than the first line width and the second line width, and / or the first line and the second line are laterally spaced apart from each other by a predetermined amount that is smaller than the first line width and the second line width; An atomic layer deposition and / or etching method, in which a first convex portion having a maximum lateral width smaller than the first line width and the second line width is formed, and / or a first concave portion having a maximum lateral width smaller than the first line width and the second line width is formed.

2. writing the first line includes depositing a first layer as the first line using the first precursor fluid or etching a first trench as the first line using the first precursor fluid; 10. The method of claim 1, wherein writing the second lines comprises depositing a second layer as the second lines using the second precursor fluid or etching a second trench as the second lines using the second precursor fluid.

3. 3. The method according to claim 1 or 2, wherein the maximum width of the first protrusion or the first recess is at most 50%, preferably at most 25%, more preferably at most 10%, and even more preferably at most 5% of the first line width or the second line width.

4. the first line and the second line are written with an ALD / ALE head; the ALD / ALE head is configured to deposit and / or etch spots while stationary relative to a substrate; 3. The method of claim 1, wherein the first line and / or the second line is written by moving the ALD / ALE head and the substrate relative to each other in a longitudinal direction of the line.

5. The method according to claim 1 or 2, wherein the width of the first protrusion or the first recess is controlled by controlling the position of the second line on the substrate relative to the first line.

6. The method of claim 1 or 2, comprising the step of independently controlling the position of the first line on the substrate and the position of the second line on the substrate.

7. The method according to claim 1 or 2, wherein the first line and the second line extend parallel to each other and form an elongated first protrusion and / or a first recess.

8. The method of claim 1 or 2, wherein the line widths of the first and second lines are constant and optionally equal.

9. The method of claim 1 or 2, wherein the first line comprises a first straight line portion and / or the second line comprises a second straight line portion.

10. The method of claim 2 , wherein the first precursor fluid is a first material and the second precursor fluid is a second material different from the first material.

11. using a third precursor fluid to write a third longitudinally extending line having a third line width in the lateral direction; 3. The method according to claim 1 or 2, wherein the third line partially overlaps the second line laterally by a predetermined amount, and a second protrusion and / or a second recess is formed whose maximum width is smaller than the widths of the first, second, and third lines.

12. 12. The method of claim 11 , wherein writing the third line comprises depositing a third layer as the third line using the third precursor fluid, or etching a third trench as the third line using the third precursor fluid.

13. The method according to claim 12 , wherein a width of the second protrusion and / or the second recess is equal to a width of the first protrusion and / or the first recess.

14. 13. The method of claim 12, wherein a lateral distance between the first protrusion and / or the first recess and the second protrusion and / or the second recess is smaller than the first, second, or third line width.

15. The method of claim 14 , wherein the third line is at least partially laterally spaced a predetermined amount from the first line.

16. writing a fourth longitudinally extending line having a fourth line width in the lateral direction using a fourth precursor fluid; 3. The method according to claim 1 or 2, wherein the fourth line is laterally spaced a predetermined amount from the second line, and a third recess and / or a third protrusion is formed whose maximum width is smaller than the first, second, and fourth line widths.

17. 17. The method of claim 16, wherein writing the fourth line comprises depositing a fourth layer as the fourth line using the fourth precursor fluid, or etching a fourth trench as the fourth line using the fourth precursor fluid.

18. 3. The method of claim 1, further comprising the step of at least partially selectively removing any one of the first, second, third and / or fourth layers after depositing the first, second, third and / or fourth layers.

19. writing a fifth longitudinally extending line having a fifth line width in the lateral direction using a fifth precursor fluid; and writing a sixth longitudinally extending line having a sixth line width in the lateral direction using a sixth precursor fluid; the fifth line and the sixth line extend in a longitudinal direction different from a direction of the first line and the second line; the fifth line and the sixth line partially overlap laterally by a predetermined amount that is smaller than the fifth line width and the sixth line width, and / or the fifth line and the sixth line are laterally spaced apart from each other by a predetermined amount that is smaller than the fifth line width and the sixth line width; 3. The method according to claim 1 or 2, wherein a fourth convex portion is formed whose maximum lateral width is smaller than the fifth line width and the sixth line width, and / or a fourth concave portion is formed whose maximum lateral width is smaller than the fifth line width and the sixth line width.

20. writing the fifth line includes depositing a fifth layer as the fifth line using the fifth precursor fluid or etching a fifth trench as the fifth line using the fifth precursor fluid; 20. The method of claim 19, wherein writing the sixth line comprises depositing a sixth layer as the sixth line using the sixth precursor fluid or etching a sixth trench as the sixth line using the sixth precursor fluid.

21. Nanostructures obtained by atomic layer deposition and / or atomic layer etching, depositing a layer of material and / or etching trenches as longitudinally extending lines having lateral line widths; A nanostructure includes a material structure having a maximum lateral width that is less than the linewidth of the line.

22. a first longitudinally extending line written using a first precursor fluid and having a first line width in the lateral direction; a second longitudinally extending line written using a second precursor fluid and having a second line width in the lateral direction; the first line and the second line partially overlap laterally by a predetermined amount that is smaller than the first line width and the second line width, and / or the first line and the second line are at least partially separated laterally from each other by a predetermined amount that is smaller than the first line width and the second line width; 22. The nanostructure of claim 21, wherein a first convex portion is formed whose maximum lateral width is smaller than the first line width and the second line width, and / or a first concave portion is formed whose maximum lateral width is smaller than the first line width and the second line width.

23. the first line is delineated by depositing a first layer as the first line using the first precursor fluid or by etching a first trench as the first line using the first precursor fluid; 23. The nanostructure of claim 22, wherein the second line is delineated by depositing a second layer as the second line using the second precursor fluid or by etching a second trench as the second line using the second precursor fluid.

24. a substrate plate configured to support a substrate; an ALD / ALE head configured to write a first longitudinally extending line having a first lateral linewidth and / or a second longitudinally extending line having a second lateral linewidth on the substrate; a positioning system for relatively positioning the ALD / ALE head and the substrate; a controller configured to control the ALD / ALE head and the positioning system; the controller controls the ALD / ALE head and the positioning system such that the first line and the second line partially overlap laterally by a predetermined amount and / or such that the first line and the second line are at least partially laterally spaced apart from one another by a predetermined amount; An atomic layer deposition and / or etching system, wherein a first protrusion having a maximum lateral width smaller than the first line width and the second line width is formed, and / or a first recessed portion having a maximum lateral width smaller than the first line width and the second line width is formed.

25. the ALD / ALE head is configured to deposit and / or etch spots while stationary relative to the substrate; 25. The system of claim 24, wherein the controller is configured to move the ALD / ALE head and the substrate relative to one another along the length of the line while writing the first line and / or the second line.

26. 26. The system of claim 24 or 25, wherein the controller is configured to control a width of the first protrusion or the first depression by controlling a position on the substrate of the second line relative to the first line.

27. 27. The system of claim 26, wherein the controller is configured to independently control the position of the first line on the substrate and the position of the second line on the substrate.

Images