Structured wafer and optoelectronic components manufactured therewith - Patents.com

Abstract

The invention relates to an encapsulated optoelectronic component, which comprises a housing and at least one optoelectronic component, the optoelectronic component being arranged in a cavity, which is formed by a base element and covered on the upper side by a cover element, such that the optoelectronic component is arranged between the cover element and the base element, the base element forming a side wall laterally surrounding the cavity. Between the cover element and the base element, a one-piece plate element with at least one tongue-shaped deflection element is arranged such that a deflection element with at least one optical area capable of deflecting electromagnetic radiation emitted or received by the optoelectronic component is arranged in the cavity. The invention also relates to at least one wafer with a deflection element, a composite of the encapsulated optoelectronic component and a method for the production thereof.

Description

[Technical field]

[0001] The present invention relates generally to encapsulated optoelectronic components for emitting or receiving electromagnetic radiation, particularly light of a given wavelength, and more particularly to encapsulated edge-emitting laser diodes. [Background technology]

[0002] Optoelectronic components such as light-emitting diodes, in particular so-called edge-emitting laser diodes (EELDs), i.e. edge-emitting laser diodes manufactured on a wafer or chip basis, are usually operated in dry, hermetically sealed housings in order to extend their service life. In such cases, the light emitted by the diode leaves the housing either through a window on the side or, after deflection by a prism or mirror, through a window above the diode. Figures 1 and 2 each show one of these two construction forms known from the prior art.

[0003] The base material of the housing is preferably made of silicon or glass or glass ceramics as a whole in this case. In order to have minimal influence on the beam quality as it leaves the housing, the transmissive and / or reflective areas are usually designed as optical areas that are polished on one or both sides.

[0004] The manufacture of optical components in microsystem technology, such as windows, prisms, mirrors, etc., and their assembly into hermetically sealed housings, tends to match the requirements of single-piece manufacturing and is time-consuming, laborious and therefore costly.

[0005] Typically, a flat substrate with a cavity or a substrate with a cavity, e.g. made of glass or glass ceramic, and a window are joined and connected by sealing or bonding to form a hermetically sealed housing. Mounting a prism, especially an edge-emitting diode, perpendicular to the substrate plane is also labor intensive, which leads to high costs.

[0006] Furthermore, the sloped structuring of the sidewalls to create a deflection device for the light emitted by the diode reduces the optical properties of the processed surface, which are caused for example by process-induced roughness or irregularities.

[0007] US 2018287334 A1 describes, for example, a light source device comprising a base element, a semiconductor laser arranged on the base element, a side wall formed to surround the semiconductor laser, and a light-transmitting cover. The side wall in this case has an inclined reflecting surface, so that the light emitted by the semiconductor laser is reflected towards the cover. The production of such an inclined wall of silicon is carried out, for example by anisotropic etching depending on the crystal orientation, in particular at a specially selected angle, for example at an angle of 45°, but is laborious and involves high costs. Summary of the Invention [Problem to be solved by the invention]

[0008] The present invention therefore aims to design an optical setup in a housing in an easily and flexibly configurable manner, and in particular also to provide and manufacture hermetically sealed housings for optoelectronic components, such as laser diodes, in parallel and in large quantities, preferably on a wafer basis. [Means for solving the problem]

[0009] This problem is solved by the subject matter of the independent claims. Advantageous developments are given in the respective dependent claims.

[0010] The invention therefore relates to a structured wafer for manufacturing a composite of encapsulated optoelectronic components with deflection elements for deflecting electromagnetic radiation, the wafer being plate-like, extending in the longitudinal and transverse directions, with two opposing surface areas and with a plurality of openings arranged in a grid-like distribution and spaced apart from one another in the longitudinal and transverse directions, in the area of ​​each opening at least one tongue-shaped bending region is defined, by bending of the bending regions a tongue-shaped deflection element with at least one optical region can be formed in each case, the deflection element being reversibly permanently deformable as part of the one-piece structured wafer, such that each deflection element can be repeatedly tilted or bent about at least one first axis.

[0011] The repeatably tiltable deflection element allows the optical field of the deflection element to be advantageously set at any angle within the encapsulated optoelectronic component, for example between 0° and 90°, in this way allowing the light beam emitted by the diode to be adjusted as desired.

[0012] Advantageously, the optical area of ​​at least one deflection element is designed in a planar manner, so that in particular the light beam emitted by the diode or coming from the wall or cover element is deflected uniformly. A planarly designed area allows the light to be deflected better, for example reflected.

[0013] Tongue-shaped in the sense of the invention is understood to mean that at least a part of the tongue-shaped bending region and / or at least a part of the tongue-shaped deflection element is connected to the wafer. Advantageously, another part protrudes into the opening. Here, the tongue-shaped bending region and / or the tongue-shaped deflection element can be elongated and connected to the wafer with one narrow side or, conversely, with one long side connected to the wafer.

[0014] It is also possible for the tongue-shaped bending region and / or the tongue-shaped deflection element to have a rectangular or square shape. However, other shapes are also conceivable, such as, for example, an elliptical, circular, partially circular, trapezoidal, triangular shape or a generally free-form region, each of which is connected to a wafer in one part. In general, the tongue-shaped bending region or the tongue-shaped deflection element can extend in the longitudinal and transverse directions. Here, it is also possible for the longitudinal sides to be longer than the transverse sides and vice versa.

[0015] In order to simplify the production of encapsulated optoelectronic components and to design them more cheaply, a large number of individual components are usually first produced as a composite, which are then separated. In an advantageous embodiment, therefore, it is provided that the openings are arranged in such a way that by cutting off parts of the wafer along the separation lines between the openings, separate one-piece plate elements can be obtained, each having an opening with a frame and at least one deflection element connected to the frame.

[0016] The object is therefore to provide a composite of encapsulated optoelectronic components, which composite forms a housing with at least one base element and a cover element, in which a number of optoelectronic components are arranged in a respective cavity of the housing, the cavity being formed by the base element and covered on the upper side by the cover element, so that the optoelectronic components are arranged between the cover element and the base element, the base element forming a side wall laterally enclosing a respective cavity, the base element being in particular a substrate and / or carrier having a recess which defines the cavity. The problem is also solved by a composite comprising a one-piece structured wafer, in particular as described in any one of the preceding claims, and a spacer arranged thereon, the spacer having an opening defining a cavity, between the cover element and the base element and / or between the support and the substrate, the structured wafer having a tongue-shaped deflecting element, in each cavity a tongue-shaped deflecting element is arranged having at least one optical region that is folded or can be repeatedly tilted or bent around at least one first axis, the optical region being able to deflect electromagnetic radiation emitted or received by the optoelectronic component.

[0017] The base element, in particular the substrate, is likewise advantageously formed as a wafer. The carrier and / or the spacer may likewise be formed as a wafer. In a further embodiment, the cover element may also be formed as a wafer. If at least one of these elements, or preferably several or all of these elements, are wafer-like, the composite of the encapsulated optoelectronic component can be produced particularly easily, since the elements can be stacked and / or aligned with one another particularly easily. The composite thus preferably has at least four wafers, in particular a cover wafer, a wafer with deflection elements, a carrier wafer and a spacer wafer.

[0018] The complex thus has at least one, and advantageously several, of the following characteristics: the wafer, in particular the structured wafer and / or the at least one deflection element, has a thickness in the range of 0.03 mm to 1.3 mm, preferably in the range of 0.05 mm to 0.4 mm; the spacer has a thickness in the range of 0.3 mm to 3.0 mm, advantageously in the range of 0.7 mm to 2.6 mm, particularly preferably in the range of 0.7 mm to 1.5 mm; - the support has a thickness in the range of 0.3 mm to 3.0 mm; The cover element has a thickness in the range from 0.1 mm to 2.0 mm, advantageously in the range from 0.2 mm to 1.2 mm, particularly preferably in the range from 0.3 mm to 0.8 mm.

[0019] In this way, for example, the spacer provides a cavity of sufficient height that is particularly suitable for accommodating diodes, in particular edge-emitting diodes. The cover element is advantageously thinner than the spacer and / or the support. In order to provide one or more movable deflection elements, the wafer or structured wafer is ideally formed as a thin glass wafer and / or is thinner than the cover element and / or the support.

[0020] Further embodiments provide at least one of the following features: the wafer comprises or consists of glass, glass-ceramic, ceramic, metal, plastic or a mixture or combination of these materials; the support or substrate comprises or consists of glass, glass ceramic and / or ceramic, the base element or spacer comprises or consists of glass, glass ceramic and / or ceramic, the cover element comprises or consists of glass, in particular glass that is at least partially transparent to electromagnetic radiation; The cover element comprises or consists of tempered and / or hardened glass.

[0021] If the support or substrate is made of glass, glass ceramic and / or ceramic, the support or substrate can also be designed as a submount and / or electronic, in particular a multilayer printed circuit board, in a particularly preferred embodiment, in order to be able to place optoelectronic components on the support or substrate. In a further embodiment, the submount area is further connected to a heat sink by a thermally conductive epoxy layer. In the best case, the optoelectronic components can also be connected to a power supply circuit or a switching circuit via the support or substrate.

[0022] In order to transmit the electromagnetic radiation out of or into the housing, at least the cover element and / or the spacer or the substrate comprises a material, in particular glass, that is at least partially transparent to electromagnetic radiation in one or more wavelength ranges. In order to achieve lateral emission, the spacer or substrate preferably comprises a material that is at least partially transparent to electromagnetic radiation. In the case of sealed optoelectronic components that emit upwards, the cover element preferably comprises a material that is at least partially transparent to electromagnetic radiation. Such materials are preferably also used in embodiments in which the electromagnetic radiation is incident on the sealed optoelectronic component or the cover element from above.

[0023] A composite of encapsulated optoelectronic components constructed in this manner can be readily used to manufacture individual encapsulated optoelectronic components.

[0024] This problem can therefore also be solved by an encapsulated optoelectronic component, in particular one which can be produced or has been produced from the composites shown above. The encapsulated optoelectronic component comprises a housing and at least one optoelectronic component, the optoelectronic component being arranged in a cavity, the cavity being formed by a base element and covered on the upper side by a cover element, so that the optoelectronic component is arranged between the cover element and the base element. The base element forms a side wall which laterally surrounds the cavity, the base element comprising a substrate and / or support having at least one recess which defines the cavity, and a spacer arranged thereon, which has at least one opening which defines the cavity. Between the cover element and the base element, a one-piece plate element with at least one folded tongue-shaped deflection element is arranged such that a deflection element with at least one optical area which can deflect the electromagnetic radiation emitted or received by the optoelectronic component is arranged in the cavity.

[0025] Since the sealed optoelectronic components are produced particularly cost-effectively on a wafer basis or by individualization from a composite, it is possible to provide that the sealed optoelectronic components have a rectangular or square shape. The side length of such components can then be, for example, between 3 mm and 12 mm, advantageously between 5 mm and 7 mm. Square dimensions of 7x7 mm or rectangular dimensions of 5x10 mm are particularly preferred. Such dimensions are particularly suitable for microelectronic applications and are compatible with other components in this field of application. However, other dimensions with side lengths of more than 12 mm and / or less than 3 mm are also feasible. Similarly, the optoelectronic components can also have other shapes, for example ovals, circles, trapezoids or triangles, in particular shapes with side walls at an inclined angle to one another, such as, for example, parallelograms.

[0026] In a particular embodiment, at least one actuator, advantageously two or more actuators, are arranged such that the deflection element can be aligned by the one or more actuators, in particular such that the beam path of the light emitted from the light source / diode can be reversibly changed or controlled during operation by alignment of the deflection element by the one or more actuators.

[0027] In a further embodiment, it is provided that the deflection element is deformed and / or deformable, in particular that the deflection element has a concave or convex shape. It is for example conceivable that the deflection element is formed as a mirror adapted to the wavefront, preferably to the wavefront of electromagnetic radiation, in particular in a given wavelength range.

[0028] The subject also relates to a method for producing an encapsulated optoelectronic component, in particular an encapsulated optoelectronic component as described above, comprising the steps of: - making a cut in at least one surface area of ​​the plate-like wafer, - creating cuts along a plurality of predetermined spaced apart closed paths on the wafer; - creating cuts along a plurality of predetermined spaced apart connection paths on the wafer; - the closed path break extends through the wafer from one surface area to an opposing surface area; - creating a material weakening structure such that the breaks in the connection paths form an area adjacent each connection path that forms a tongue-like fold region that remains at least indirectly connected to the wafer; providing a plurality of optoelectronic components, a base element having a void, a wafer, and at least one cover element; - producing a composite of sealed optoelectronic components, in particular the composite described above, by arranging each one of the optoelectronic components in the cavity and arranging the wafer between the cover element and the base element, - tilting at least one bending region such that at least one deflection element or all deflection elements are tilted into the cavity, - singulating the composite, in particular the wafer composite of encapsulated optoelectronic components, along the separation lines between the voids to obtain individual encapsulated optoelectronic components, in particular the encapsulated optoelectronic components mentioned above; It can also be solved by the method.

[0029] The deflection element folded in this way functions as a deflection optical region, in particular a mirror region, the optical properties of which are determined, for example, by the reflective properties (refractive index, reflectivity) of the wafer, the surface quality (waviness, roughness) and, if applicable, the properties of the applied coating.

[0030] In order to ensure consistent optical properties of the quality of the emitted laser beam of the optoelectronic component when reflected on the folded mirror or deflection element or when transmitted through the glass area or folded mirror, direct contact with the optical area should be avoided. Therefore, in a further embodiment, a further spacer is arranged between the structured wafer and the cover, thereby preventing direct contact between the areas.

[0031] In an advantageous embodiment, it is provided that at least a cut is generated in the wafer by a laser, in particular an ultrashort pulsed laser. Advantageously, a laser material processing method, in particular laser filamentation, is used to precisely determine and control the cut or filament penetration depth.

[0032] The present invention will now be described in detail with reference to the accompanying drawings, in which like reference numerals indicate the same or corresponding elements, and in which: [Brief description of the drawings]

[0033] [Figure 1] FIG. 1 shows one configuration of a sealed laser diode known from the prior art. [Diagram 2]FIG. 1 shows one configuration of a sealed laser diode known from the prior art. [Diagram 3] FIG. 1 is a schematic diagram of the creation of damage in a wafer by a laser. [Figure 4] FIG. 2 is a schematic diagram of a glass element having multiple damage. [Diagram 5] 5A-5C show schematic progressions of cutting paths for producing a wafer with deflection elements; [Figure 6] FIG. 2 is a schematic top view of a wafer with deflection elements. [Figure 7] 1A-1D are schematic top view illustrations of various embodiments of material weakening structures. [Figure 8] 1A-1D are schematic top view illustrations of various embodiments of material weakening structures. [Figure 9] 1A-1D are schematic top view illustrations of various embodiments of material weakening structures. [Figure 10] 1A-1D are schematic top view illustrations of various embodiments of material weakening structures. [Figure 11] 1A-1D are schematic cross-sectional views of various embodiments of material weakening structures. [Figure 12] 1A-1D are schematic cross-sectional views of various embodiments of material weakening structures. [Figure 13] 1A-1D are schematic cross-sectional views of various embodiments of material weakening structures. [Figure 14] FIG. 2 is a schematic diagram of the singulation of a composite of encapsulated optoelectronic components. [Figure 15] FIG. 2 is a schematic diagram of a wall of a spacer. [Figure 16] 1 is a schematic diagram of the structure of an encapsulated optoelectronic part and its components. [Figure 17] FIG. 2 shows an encapsulated optoelectronic component with a cover element having a protrusion. [Figure 18] 13A-13C are schematic diagrams of the manufacture of beveled edges of deflection elements; [Figure 19] FIG. 1 illustrates an encapsulated optoelectronic component with beveled edges of the spacer. [Figure 20] 11A-11C show various alignments of deflection elements; [Figure 21] 11A-11C show various alignments of deflection elements; [Figure 22] 11A-11C show various alignments of deflection elements; [Figure 23] FIG. 2 is a schematic diagram of a deflection element with a deflection portion and a positioning portion. [Figure 24] FIG. 2 is a schematic diagram of a deflection element with two deflection sections. [Diagram 25] 1A-1C show structural forms of various geometric shapes of deflection elements; [Figure 26] 1A-1C show structural forms of various geometric shapes of deflection elements; [Figure 27] 1A-1C show structural forms of various geometric shapes of deflection elements; [Figure 28] 1A-1C show structural forms of various geometric shapes of deflection elements; [Figure 29] FIG. 13 shows a composite with two structured wafers whose deflection elements are rotated relative to one another so that the laser beam can be positioned and aligned in two independent directions. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] 1 and 2 each show a prior art configuration 200. In FIG. 1, for example, a configuration 200 of an encapsulated laser diode chip 203 is shown. The laser diode chip 203 is placed on a submount 202, which is applied to a ceramic substrate. A cavity is produced by a lid 205 having windows 204 at the sides between which the cavity is formed. The lid 205 is connected to the windows 204 by an adhesive 206 so that the capsule is hermetically sealed. The laser diode chip 203 emits light along the ceramic substrate 201 such that a light beam 150 exits laterally through the windows 204.

[0035] 2 shows another prior art configuration 200, where the light beam 150 exits upwards through the lid 205 at a certain angle rather than to the side. In this case, the light beam 150 emitted by the laser diode chip 203 is deflected upwards at a certain angle by a mirror prism 207 located on the ceramic substrate 201. In this configuration, the cavity is formed by hollowing out the ceramic substrate 201.

[0036] 1 and 2 has the disadvantage that the exit angle of the light beam 150 cannot be selected flexibly, in particular cannot be selected individually, and in particular cannot be changed later, i.e. after the installation of the encapsulated laser diode. In particular, the installation of individual deflection elements, for example in the form of small prisms in the wafer composite, is also very laborious.

[0037] 3 to 16 thus show in particular a method for producing an encapsulated optoelectronic component 1 with a tongue-shaped folding region, in which a tongue-shaped deflecting element with at least one optical region 30 can be formed by folding the folding region 13. Here, the deflecting element 14 can be repeatedly tilted or bent about at least one first axis, in particular the angle of the deflecting element 14 or even its position, possibly even after the installation of the encapsulated laser diode.

[0038] In a first step, a plate-like wafer 2, in particular made of glass or glass ceramic, is first provided. Particularly preferably, the wafer 2 is a thin glass wafer. The wafer 2 has a thickness D of more than 0.03 mm, preferably more than 0.05 mm, particularly preferably more than 0.1 mm and / or less than 1.3 mm, preferably less than 0.4 mm. Such a thickness is particularly suitable for use as an additional element of the encapsulated optoelectronic component 1.

[0039] In an advantageous embodiment, the wafer 2 may comprise or consist of borosilicate glass. However, it is also possible to use one of the following chemical compositions, with the following compositions: SiO258~65 B2O36~10.5 Al2O314~25 MgO 0~3 CaO 0~9 BaO 3~8 ZnO 0~2 is shown in weight percent, with the proviso that the total content of MgO, CaO and BaO is in the range of 8 to 18 wt.%.

[0040] The composition of Wafer 2 is exemplified by the following composition: SiO230~85 B2O33~20 Al2O30~15 Na2O 3~15 K2O 3~15 ZnO 0-12 TiO20.5~10 CaO 0~0.1.

[0041] The composition of wafer 2 can also be illustrated by the following composition: SiO240~50 B2O310~20 Al2O310~20 As2O3 Less than 1 BaO 20~30 CaO less than 1.

[0042] The composition of wafer 2 can also be illustrated by the following composition: SiO270~82 B2O310~20 Al2O31~10 Na2O 1~10 K2O Less than 1 Fe oxide less than 1 Cl oxide less than 1.

[0043] Such compositions can be processed or structured particularly well in laser processes. Furthermore, such glasses are particularly suitable for making deflection elements bendable without significant risk of breakage. Advantageously, the composition of the glass or wafer is selected such that its thermal expansion coefficient matches the thermal properties of the carrier, the cover element and / or the spacer. In this way, stresses between the components can be avoided or at least reduced, especially when the optoelectronic components are heated during operation.

[0044] As illustrated in FIG. 3, the wafer 2 can be structured in a further step by ultrashort pulse laser or laser ablation as follows: a laser beam 100 of an ultrashort pulsed laser 101 is irradiated onto one of the surface areas 2a of the plate-like wafer 2 and is advantageously focused on the material of the wafer by means of focusing optics 102, forming a particularly elongated focus; the incident energy of the laser beam 100 generates a filamentary damage 103 in the volume of the wafer 2, the length of which extends transversely to the surface areas 2a, 2b of the wafer 2, in particular perpendicularly to the surface areas 2a, 2b; to generate the filamentary damage 103, the ultrashort pulsed laser 101 is irradiated with one pulse or with one pulse packet comprising at least two successive laser pulses; The impact point of the laser beam 100 on the wafer 2 is guided along a number of predetermined paths 10, 11, 12 spaced apart from one another, so that - Multiple adjacent filamentous lesions 103 on a path are introduced.

[0045] By selecting appropriate laser parameters, the size and spacing of the lesions 103 can be influenced or even tuned. A suitable laser source, according to the present invention, can be a neodymium-doped yttrium aluminum garnet laser (Nd:YAG laser) with a wavelength of 1064 nanometers. The laser source can be, for example, (1 / e 2) to generate a raw beam with a diameter of 12 mm. As optics, a biconvex lens with a focal length of 16 mm can be used. For generating the raw beam, suitable beam shaping optics, for example a Galilean telescope, can be used. The laser source advantageously operates at a repetition rate of 1 kHz to 1000 kHz, advantageously 2 kHz to 100 kHz, particularly preferably 3 kHz to 200 kHz. Here, the repetition rate and / or the scanning speed can be selected such that the desired spacing between adjacent lesions is achieved.

[0046] Other variants of Nd:YAG lasers, such as 532 nm or 355 nm wavelengths generated by frequency doubling (SHG) or frequency tripling (THG), or even Yb:YAG lasers (emission wavelength 1030 nm) can be suitably used as beam sources as well.

[0047] It is also conceivable that one laser pulse is divided into a number of single pulses, the number of which is less than 10, preferably less than 8, preferably less than 7 and / or more than 1, preferably more than 2, preferably more than 3. These single pulses can be grouped together to form a one-pulse packet, a so-called burst, and are emitted in particular in successive laser pulses. Advantageously, these single pulses are directed to the same place or to the same location of the surface area 2a, 2b, so that the successive single pulses further extend the damage 103, in particular creating a channel that extends, for example, through the entire thickness D or volume of the wafer 2.

[0048] Without being limited to the depicted example, FIG. 4 illustrates an arrangement of filamentary damages 103 generated in a wafer 2. Here, the wafer extends in a longitudinal direction L and a transverse direction B. The paths 10, 11, 12 are thus along the longitudinal direction L and the transverse direction B. In this way, the entire area of ​​the wafer 2 can be advantageously divided into regularly arranged partial areas 104, each of which can provide a suitable opening for an optical component. Such openings can be generated in a subsequent process step.

[0049] In one embodiment, a plurality of damages 103 are generated in the wafer 2, so that ideally perforations of the wafer 2 can be formed by the damages 103, in particular around the partial region 104. For this purpose, a plurality of damages 103 are preferably generated next to each other, such that a row of damages 103 defined by the paths 10, 11, 12 represents a larger structure. The damages 103 are in particular formed as filamentary channels, the longitudinal direction of which runs transversely to at least one surface region 2a, 2b of the wafer 2. Here, the channel runs perpendicularly from at least one surface region 2a, in particular from this surface region 2a, into the wafer 2 and at least through this surface region 2a. However, preferably, the channel runs from one surface region 2a to the opposite surface region 2b, as for example illustrated in FIG. 1.

[0050] Various paths 10, 11, 12 are illustrated in Fig. 5 without being limited to the illustrated example. Thus, the damage 103 can be generated along the closed path 10, the open path 11 and the connecting path 12. Each path 10, 11, 12 advantageously provides various structures, so that, for example, the closed path 10 surrounds a predetermined partial area 104, which partial area 104 can each provide an opening 20 of the optical component. Advantageously, an open path 11 can extend or be generated adjacent to the closed path 10. The open path 11 is in particular adjacent at one end to the closed path 10 and at the other end to the connecting path 12. In this case, the open path 11 can be formed as an extension of a partial section of the closed path 10.

[0051] Between the open path 11 and the connecting path 12, a tongue-shaped folding region 13 can also be defined. In this case, preferably one tongue-shaped folding region 13 is arranged in each case in one partial region 104, which can be separated from the folding region 13 by at least one open path 11 and / or by at least one closed path 10. However, the folding region 13 can also be at least partially surrounded by the closed path 10 and in particular adjoin the connecting path 12 on the side opposite the closed path 10. This is the case, for example, if the folding region 13 is formed in the shape of a partial circle or a partial ellipse. The connecting path 12 is in this case located between two corners of the closed path 10.

[0052] Since the closed path 10 and / or the open path 11 are interrupted by at least one, and preferably several, cuttable partial regions, it is particularly conceivable that each folding region 13 remains connected to the wafer 2 via the partial region during further process steps.

[0053] The folding regions 13 are best arranged in such a way that they can be folded after the etching process, while remaining at least indirectly or directly connected to the wafer 2. Indirect connection is understood here to mean a connection by means of a material-weakened structure. Advantageously, a deflection element 14 is formed by bending each folding region 13. The deflection element 14 can thus have a shape that is adapted to the folding region 13 and vice versa.

[0054] Advantageously, the closed paths 10, the open paths 11 and / or the connecting paths extend linearly, in particular along the longitudinal direction L and / or transverse direction B of the wafer 2. In this case, the partial regions 104 or the openings may be formed rectangular or square. However, the paths 10, 11, 12 may also extend curved or curvilinearly, for example in the shape of a partial circle, in particular in such a way that the folding region 13 or the deflection element 14 has at least one rounded edge or corner.

[0055] In one embodiment, the wafer is exposed to an etching medium 300 after the introduction of the filamentary damage 103, particularly along paths 10, 11, 12, - by etching, the wafer material between the channels of the closed paths 10 and the channels of the open paths 11 is removed, enlarging the diameter of the channels until they merge, so that a plurality of openings 20 arranged in a grid-like distribution and spaced apart from one another and tongue-like fold regions 13 arranged adjacent thereto are formed in the wafer 2; - Etching enlarges the diameter of the channels until part of the wafer material between the channels of the connecting paths 12 is removed, this removal being performed in such a way that material weakening structures 16 are formed in the area of ​​each connecting path 12 and the folding areas 13 between the open paths 11 or between the open paths 11 and the closed paths 10 form deflection elements 14 which remain connected to the wafer 2 by the material weakening structures 16.

[0056] In an alternative embodiment, the partial regions 104 of the wafer 2 can be structured, preferably in the form of smaller rectangular regions, in particular such that perforation of the material is performed on three sides of the rectangle. In other words, perforation of the material along the closed path 10 and / or the open path 11 can be performed by introducing damage 103, for example by means of a laser or laser filamentation. The partial regions 104 or the folding regions 13 can then be opened by introducing mechanical stress, advantageously by a breaking process. However, on the fourth side of the rectangle, in particular on the connecting path 12, the material is structured, which structuring is advantageously performed in such a way that the material is reversibly permanently deformable, so that this region serves as a hinge for bending or folding the inner rectangular or differently shaped folding region 13.

[0057] Thus, a discontinuity within the meaning of the present invention can be defined as a closed path 10, an open path 11 and / or a connecting path 12 that has been altered, e.g., widened or broken, during an etching or mechanical process. However, paths 10, 11, 12 can also be understood to be discontinuities, especially since discontinuities extend in the same manner as paths 10, 11, 12.

[0058] 6 thus shows by way of example a structured wafer 2 with spaced apart openings 20. Arranged in each opening 20 is a folding region 13, which can be folded, for example by the action of mechanical stress, to form a deflection element 14. In this case, the deflection elements 14 or the folding regions 13 are connected to the wafer 2 via material-weakened structures 16 which preferably run in the same way as the connection paths 12.

[0059] It is therefore advantageous if each deflection element 14 is connected to the wafer 2 via a section with material-weakening structures 16, so that the deformation forces required to bend the wafer material at this section are less than at the non-structured section. In this way, the deflection element 14 can be bent or preferably folded or tilted several times, particularly preferably any number of times. In this case, the tilt angle can ideally be freely selected, for example in the range from 90° to 0°, so that the light can be deflected appropriately depending on the envisaged application.

[0060] In a further embodiment, it is provided that each deflection element 14 is connected to the wafer 2 by at least one, preferably several, cuttable partial regions, so that the deflection elements 14 remain connected to the wafer 2 in particular only via the material-weakening structures 16 after cutting of the partial regions. In this way, handling and transport of the wafer 2 can be facilitated, in particular when glass processing and the assembly of diodes or the formation of the optoelectronic component 1 by assembly of individual elements take place separately from one another. The deflection elements 14 are in this case fixed during transport and are not at risk of tilting uncontrolled.

[0061] At least one of the following characteristics is also possible: - the material-weakening structure 16 has a recess 90 which extends at least partially through the wafer material along the thickness D of the wafer 2, the recess 90 penetrating only one face area 2a, - the material-weakening structure 16 has a recess which extends completely through the wafer material along the thickness D of the wafer 2, the recess penetrating two opposing surface areas 2a, 2b; the material-weakening structures 16 have recesses 90 arranged side by side such that the areas between which the material-weakening structures are arranged are connected to one another via webs 92, 94; the recess 90 is of elongated design, the longitudinal direction of which advantageously runs parallel to the tilt or bending axis, in particular the first axis 31, of the deflection element 14; the recesses 90 are arranged in a row along the direction of the tilt or bending axis; the recesses are arranged in rows along the direction of the tilt or bending axis, the rows of recesses 90 being offset from one another;

[0062] FIG. 7 shows an embodiment of the material-weakening structure 16. The wafer 2 is shown as a partial region of a top view of one of its surface areas 2a. The surface of the wafer is shown here as the shaded region. Advantageously, the wafer 2 consists of glass, in particular thin glass. In this partial region, the wafer 2 can be divided into three parts: a first part in the form of the material-weakening structure 16 with a recess 90, a second part 15 following the material-weakening structure 16, and a folding region 13 or a deflection element 14. The second part represents the region of the wafer 2 surrounding the deflection element 14, to which the deflection element 14 is at least indirectly fixed via the material-weakening structure 16. Here, the material-weakening structure 16 is located between the second part 15 and the deflection element 14. The second part 15 and the deflection element 14 or the folding region 13 advantageously have a closed flat surface and therefore in particular do not have a recess 90. In contrast, the recesses 90 of the material-weakening structures 16 according to one embodiment form passageways or through-holes from one surface area 2a to the opposing non-visible surface area 2b.

[0063] On the other hand, it is also conceivable and possible to realize the connection of the folding elements to the wafer without material weakening structures. In this case, it is also possible to bring the folding elements into position by bending the glass. Such an embodiment is particularly suitable for very thin glass with a thickness of less than 50 μm, preferably 30 μm or less.

[0064] Without being limited to the embodiment shown in FIG. 7, the recesses 90 are generally arranged in an array of adjacent parallel lines 91. These lines may extend, for example, parallel to the first axis 31 or the second axis 32, about which the deflection element 14 may be folded or tilted. The rows 91 of recesses are advantageously arranged in parallel. In this way, the spacing between the recesses 90 of adjacent rows 91 remains constant. The recesses 90 in a row 91 are separated by a first web 92. Furthermore, the openings 90 of adjacent rows 91 are separated by a second web 94. Thus, the material weakening structure 16 may be generally described as a mesh consisting of interconnected first and second webs 92, 94, between which the recesses 90 are arranged.

[0065] The recesses 90 or the mesh of webs 92, 94 provide the material weakening structure 16 with a high degree of flexibility, so that the wafer 2 of the material weakening structure 16 can be easily bent. This flexibility is particularly high when elongated recesses 90 are introduced into the wafer 2 to form the material weakening structure 16. In particular, it is advantageous if the longitudinal direction of the recesses 90 runs in the longitudinal direction of the row 91. Depending on the shape of the webs 92, 94 and their respective dimensions, the bending forces can be influenced and reduced. Generally, but not limited to the illustrated embodiment, the arrangement and shape of the webs 92, 94 are designed so that the material weakening structure 16 is more flexible along a first axis 31, in particular along the longitudinal direction of the recesses 90, than along a bending axis perpendicular to the longitudinal direction of the recesses 90. A preferred bending axis, in particular the first axis 31 along the longitudinal direction of the recesses 91, is shown in FIG. 7. Because the bending axis extends along the boundary line 95 between the second portion 15 and the bend region 13 or deflection element 14, the material weakening structure 16 provides a hinge for advantageously bending the deflection element 14 any number of times and / or tilting it at a desired angle.

[0066] Moreover, as is clear from FIG. 7, the first webs 92 of adjacent rows 91 are offset from one another. The first webs also define the suspension points of the second webs 94. Due to the offset arrangement of these suspension points, the bending of the first section 9 is partially relieved by the twisting of the second webs 94. A very advantageous effect of the transformation of bending stresses into torsional stresses is that the maximum tensile stresses occurring in the brittle material are reduced compared to the tensile stresses occurring in a bent, stronger plate. Thus, in a general concept, the element made of brittle material can also be characterized by a mesh of interconnected webs 92, 94 such that bending of the deflection element 14 results in the twisting of at least one partial amount of the webs 92, 94.

[0067] In the exemplary embodiment shown in Figure 7, the number of second webs 94 subjected to torsional strain is approximately half of the total number of webs 92, 94. According to one preferred embodiment, the webs, in particular the first and second webs 92, 94, form a mesh, the webs being interconnected such that at least a fractional amount of the webs in the mesh is subjected to torsional stress upon bending 2 of the material weakening structure 16, the fractional amount generally being preferred to include at least one third of the total number of webs in the mesh.

[0068] In addition to bending the deflection elements 14, strains can also be generated by uniaxial tensile forces along the material weakening structures 16. In this case, the webs absorb the tensile forces by bending in a plane parallel to the surface regions 2a, 2b. This bending allows strains to converge at the ends of the associated recesses 90. For this reason, it is generally preferred to provide recesses 90 with a rounded contour, in particular a contour with rounded ends, as in the embodiment of FIG. 7. These ends are in particular located at opposite positions in the direction along the row 91. A rounded contour does not mean that the recesses 90 can also have straight sections. In fact, the embodiment of FIG. 7 has a straight contour segment 93 that extends along the length of the elongated recesses 90. A rounded contour means that the contour of the recesses 90 does not have sharp edges.

[0069] Figures 8 and 9 show two embodiments of a mesh of recesses 90 in a material weakening structure 16. The embodiment of 8 is similar to that shown in 7. The recesses 90 are thus elongated and have a rounded contour with straight longitudinal edges. However, the shape of the recesses 90 and webs 92, 94 in the embodiment of Figure 9 is more complex. In general, and without being limited to the particular embodiment shown, the recesses 90 have a variable width along their length. That is, the recesses 90 have two width maxima 17 spaced apart in the longitudinal direction, with a width maxima 18 between the two width maxima 17.

[0070] Similarly, the second web 94 has two width minima 19. These minima 19a are spaced apart in the longitudinal direction of the web 94. Additionally, between the width minima 19 of the second web 94 is a width maximum intermediate portion 19b.

[0071] The contour of the recess 90 is more complex compared to the example of FIG. 8, but in both examples the contour of the recess 90 or the second web 94 has at least one straight segment 96. In particular, according to a further embodiment, the position of the width maximum intermediate portion 19b of the second web 94 is located in the straight segment 96. Similarly, the position of the width minimum intermediate portion 18 of the recess is located along the straight segment 96. If the opposing straight segments 96 are arranged in parallel, these features result in minima and maxima extending in the longitudinal direction, i.e. in particular along the direction of the line 91. This is advantageous for spreading out and thereby reducing the maximum tensile stresses that may occur during bending of the material weakening structure 16 along the contour.

[0072] The influence of the dimensions of the recess 90 and the webs 92, 94 on the principal stresses is explained in more detail below. For this purpose, the basic design and some of its variants were characterized using finite element analysis. Figure 10 shows the material weakening structure 16 of the basic structure in its dimensions. For example, the first web 92 has a length of 0.1 mm and the second web 94 has a minimum width of 0.05 mm. The recess 90 has a length of 3 mm and a width that varies between 0.1 mm and 0.2 mm. The thickness of the reference element 1 is 100 μm.

[0073] In a first analysis, each length of the first web 92 is examined. The lengths are 50 μm, 100 μm (reference), 200 μm, and 300 μm. Finite element analysis reveals that the bending radius remains approximately constant at 50 MPa for the S11 component of strain. However, the S22 component decreases significantly as the length of the first web 92 increases. At 50 MPa for a web length of 300 μm, the bending radius is 3 mm. Thus, according to one embodiment, in order to reduce the total bending stress, the length of the first web 92 is at least as large as the wafer thickness D, and advantageously at least twice as large.

[0074] In a second analysis, the length of the recess 90 is examined. In particular, recesses with a length of 2 mm and 3 mm are compared. The analysis shows that the length of the recess 90 does not strongly influence the principal strain. Thus, the recess 90 according to a further embodiment advantageously has a length of at least 25 times the thickness D of the wafer 2. However, if the length is too large, the stability against pressure on one of the face areas 2a, 2b decreases. Therefore, it is preferable to limit the length of the recess 90 to at most 100 times the wafer thickness.

[0075] In a third analysis, the minimum width of the second web 94 is varied. In particular, in addition to the reference model with a minimum width of 50 μm, further widths of 25 μm, 35 μm and 70 μm are investigated. The effect of the reduction in the minimum web width on the S11 component is small, while the S22 component is significantly reduced. On the other hand, however, a small web width results in a very delicate and fragile structure. Thus, according to a further embodiment, the minimum width of the second web 92 is advantageously smaller than the thickness D of the wafer 2, particularly preferably in the range of 0.3 to 0.6 times the thickness D of the wafer 2.

[0076] 11 to 13 show further embodiments of the material weakening structure 16. In FIG. 11, for example, the wafer 2 is illustrated in a cross-section along its thickness D. In the illustrated embodiment, the recess 90 extends only partially through the wafer material along the thickness D of the wafer 2, so that the recess 90 penetrates only one surface area 2a. The cut thus likewise penetrates the wafer material only partially along the thickness D. The cut, i.e. the recess 90, can thus also protrude to different depths in the wafer material. In this case, the webs, in particular the first web 92 and / or the second web 94, may be formed with a similar height relative to the thickness D. However, it is also conceivable that the webs have different heights. For example, the first web 92 may be lower or higher than the second web 94. Advantageously, the height of the web is coplanar with at least one of the surface areas 2a, 2b of the wafer, in particular with the upper edge of the web and the surface areas 2a, 2b.

[0077] In a further embodiment, according to the example of FIG. 12, recesses 90 can be arranged in the double-sided regions 2a, 2b of the wafer. Here too, the recesses 90 extend only partially through the wafer material along the thickness D of the wafer 2. However, the recesses 90 penetrate the double-sided regions 2a and 2b, in particular through two opposing double-sided regions, respectively. In this way, the remaining residual material becomes more flexible, so that stresses occurring during the bending process can be more easily relieved or do not occur at all. Advantageously, the opposing recesses 90 are arranged offset from one another, in particular such that the recess 90 in the double-sided region 2b is arranged between two recesses arranged in the opposing double-sided region 2a. However, the recesses 90 can also be arranged one above the other or opposite to the respective double-sided regions 2a, 2b.

[0078] In a further embodiment, according to the example of FIG. 13, the recesses 90 or at least parts of the recesses 90 can be cut into the wafer at an inclined angle, in particular at an angle that is not 90°. In this way, the material-weakening structures 16 can be adapted to the desired bending direction. Such inclined recesses 90 can of course also be combined with other embodiments, for example as shown in FIGS. 11 and 12. For example, it is also conceivable that the recesses 90 on one surface area 2a of the wafer 2 extend laterally, in particular vertically, into the wafer 2, and that the recesses 90 on the opposing surface area 2b extend obliquely into the material. In this way, for example, the bending angle can be limited, in particular such that the deflection element can only be tilted up to a maximum angle.

[0079] Generally, without being limited to the shown example, the recesses 90 and the webs 92, 94, in particular the material weakening structures, can have further embodiments not shown. For example, the deflection element as a whole can be provided with folded regions, by means of which a local one-sided or two-sided thinning ("local thinning") is effected, for example by an etching process. In principle, a thinning is indeed provided in the embodiment of figures 11 to 13, but in this case a more complex structuring is performed.

[0080] For example, the webs may be formed as rectangular or square protrusions. Furthermore, the recesses 90 may be configured in different shapes, for example the recesses 90 may be formed in the shape of a trapezoid, approximately a triangle or as rounded depressions. However, if a closed surface of the wafer 2 is desired, the recesses 90 may be filled for this purpose with an organic material, for example a plastic, rubber or adhesive. Depending on the application, it may also be worthwhile to leave some of the recesses 90 open. In this way, a wafer 2 can be provided in which at least a partial amount or a part of the number of recesses 90 is filled with an organic material.

[0081] According to one development of the embodiment in which the recess 90 is filled with an organic material, it is provided that the organic material is selected and adapted in such a way that the reaction force changes at most a maximum amount upon deflection of the deflection element 14. This change is measured in comparison to an embodiment with an open recess, i.e. without a recess 90 filled with an organic material.

[0082] Advantageously, the base element can also be used to manufacture encapsulated optoelectronic components 1. Preferably, the base element comprises a support 3 and a spacer 4 arranged thereon and having openings 20 defining cavities 6 into which the optoelectronic components 9 can be inserted. Preferably, these cavities 6 have a height that is adapted to the thickness of the spacer 4. This can be defined, for example, by a value of more than 0.5 mm, preferably more than 0.7 mm and / or a value of less than 3.0 mm, preferably less than 2.6 mm, particularly preferably less than 1.5 mm. Particularly preferably, the thickness is between 0.5 mm and 1 mm. The thickness of the support can advantageously be defined by a value between 0.5 mm and 1 mm. In one embodiment, the support and / or the spacer are formed as a wafer.

[0083] Instead of the combination of support 3 and spacer 4, the base element, in particular formed as a substrate or substrate wafer, can also be designed as a cavity 6 by an upstream manufacturing process in a further embodiment. A similar structure is illustrated in FIG. 2. In this case, the spacer-wafer 4 can be omitted. However, the aforementioned height value of the cavity or cavities 6 can also be maintained.

[0084] In another embodiment, it is conceivable that the cavity 6 is defined by both the recess of the support 4 and the recess of the spacer 4. In this case, the spacer 4 and the support 3 can be mounted one on top of the other such that their respective recesses define a common cavity 6 or a common opening. In this way, the height of the cavity 6 or opening can be ensured while at the same time the thickness of the spacer 4 can be reduced, thus enabling an overall more compact construction.

[0085] The spacers are described in more detail below. Examples of spacers 4, in particular spacer-wafers, are illustrated in Figures 14 and 15. In the embodiment of Figure 14, a circular spacer 4 is shown. The round shape of the spacer 4 is for example advantageous for a wafer level packaging process, in which the spacer 4 is connected to other components of the encapsulated optoelectronic part 1, for example a wafer 2 with deflection elements 14 or a support 3, before separation.

[0086] The spacer 4 is used in particular to generate spacers for the housing of the optoelectronic component 9 by cutting off the part 40 from the spacer 4. Overall, the spacer 4 is advantageously provided with a thickness of 10×10 mm in order to keep thermomechanical stresses low in the wafer composite, especially with the materials typically used for this. -6 K -1 Less than 8 x 10 -6 K -1A glass having an expansion coefficient less than 1000 nm is used. The spacer 4 therefore advantageously comprises or consists of a transparent glass sheet. It has a number of openings 20 arranged in a grid-like distribution and spaced apart from one another. When the parts 4 of the spacer 4 are cut off along the separation lines 45 extending between the openings 20, individualized spacers are obtained, each with openings 20 having a closed periphery. However, the components of the sealed optoelectronic component 1 can also be connected before the individualization.

[0087] Furthermore, according to an embodiment, the spacer 4 has a very small thickness variation (TTV=Total Thickness Variation). The thickness variation of the spacer 4 is in this embodiment less than 10 μm, preferably less than 5 μm, advantageously less than 2 μm, particularly preferably less than 1 μm. This low TTV value is particularly advantageous and necessary in order to be able to connect the various wafers to one another over the entire surface when assembling the encapsulated optoelectronic component 1 on the wafer surface. A low TTV value is also advantageous in order to be able to very accurately position the optical components applied to or connected to the spacer 4. A low TTV is also important in particular in order to achieve as equal a distance retention as possible in optical systems.

[0088] According to a particularly preferred embodiment of the spacer 4, the side walls 50 of the opening 20 each have at least one flat portion 52, advantageously at least two flat portions 52, which are in particular arranged laterally relative to one another, through which light can pass without the side walls 50 acting as a lens or cylindrical lens or otherwise distorting the spatial intensity profile of the light.

[0089] Generally, without being limited to the illustrated embodiment, the side wall 50 of the opening 20 can also have four flat portions 52. In this case, in particular, two flat portions 52 each can be opposite each other. This feature is fulfilled in particular if the opening 20 has a rectangular or square basic shape. However, this feature is also fulfilled if the corners of the rectangular or square opening 20 are rounded.

[0090] FIG. 15 is a perspective view of a partial region of the spacer 4 with an opening 20. The opening 20 has side walls 50, at least one of which, in particular all side walls, has a microstructuring 21 with roughness. This roughness has an average roughness value Ra of less than 3 μm, in particular less than 2 μm, particularly preferably less than 0.5 μm, at a measuring distance of 500 μm. The microstructuring 21 is represented in FIG. 15 by irregularly arranged circles and ellipses of different sizes. The outer wall of the spacer 4 or the outer wall of the wafer 2 can likewise have such a microstructuring 21. Both the wafer 2 and the spacer 4 can be structured, for example, by an ultrashort pulsed laser as shown in FIG. 3 and possibly even a subsequent etching process.

[0091] In this case, in particular, the roughness of the sidewall 50 of the opening 20 can be adjusted by suitable selection of the laser and etching parameters. Advantageously, by suitable selection of the number of single pulses in a pulse packet, the sidewall 50 generated around the opening 20 provided can be influenced and in particular the structure of the sidewall 50 can be adjusted in a targeted manner. Since the total power of the laser pulses is distributed in a pulse packet or in a burst over several single pulses, each pulse has a lower energy compared to a single laser pulse. As a result, the more single pulses there are, the lower the energy of each individual single pulse. In particular, the total energy of the pulses can be distributed evenly over the single pulses.

[0092] Moreover, when the ultrashort pulse laser is operated in burst mode, the repetition rate can be the repetition rate of the burst output. Moreover, the single pulses strike the surface areas 2a, 2b or damage of the wafer with time offsets, so that each single pulse modifies the previously generated state of the sidewall 50. Thus, by selecting the number of single pulses of a burst, the sidewall 50 can be structured and modified in a targeted manner.

[0093] Here, typical powers of the laser source are particularly advantageously in the range of 20-300 watts. To obtain lesions / channels, according to an advantageous development of the invention, pulse energies of pulses and / or pulse packets of more than 400 microjoules are used, and even more advantageously total energies of more than 500 microjoules are used. Suitable pulse durations of the laser pulses are in the range of less than 100 picoseconds, preferably less than 20 picoseconds.

[0094] However, it is also possible to provide for a pulse duration of less than 15 ps, preferably less than 10 ps, ​​preferably less than 5 ps. Advantageously, moreover, a pulse duration of 1 ps is used to produce a smooth sidewall 50, in particular a sidewall 50 with a low roughness or low average roughness value. Here, the roughness can be increased with increasing pulse duration. One of the reasons for this is believed to be the thermal behavior of the glass, since a longer pulse duration results in a longer exposure of the glass to the energy of the laser and thus to the heat of the laser beam, which is particularly damaging to thermally less stable glasses, for example by expansion. As a result, by accurately selecting the pulse duration and therefore ideally also the roughness of the sidewall 50, the glass of the glass element can be damaged in a specific manner. The burst frequency is in the range of 15 MHz to 90 MHz, preferably in the range of 20 MHz to 85 MHz, for example 50 MHz.

[0095] It is also advantageous if the damages 103 are spaced apart from one another, the spacing being less than 20 μm, preferably less than 15 μm, preferably less than 10 μm and / or more than 1 μm, preferably more than 2 μm, preferably more than 3 μm. However, the spacing between the damages 103 can also be more than 5 μm and / or less than 100 μm, preferably less than 50 μm, preferably less than 15 μm. Regardless of the diameter of the damages 103, the spacing between adjacent damages 103 can also be referred to as the pitch, i.e. the spacing between laser pulses that are emitted simultaneously or, in particular, one after the other and spaced apart from one another. Here, this spacing is measured from center to center of the damages 103 or from the center of the pulse to the center of the adjacently emitted pulse. By selecting the spacing of the damages 103, the roughness can be influenced when the portions between the channels are only subjected to a subsequent etching process without the need for deliberate laser processing. The portions between the channels or the spacing of the damages 103 advantageously have a dimension that advantageously corresponds to the thickness of the spacer 4 or the wafer 2.

[0096] In order to be able to optimally adjust the structure or roughness of the sidewall 50, at least one of the following relationships can be set: - Burst x Pulse Duration = Constant - Pitch / Ablation = constant.

[0097] Considering these relationships, it is clear that the laser parameters, particularly the pitch and the burst, or number of single pulses in one pulse packet, have a significant effect on the roughness of the sidewall 50.

[0098] As explained in the example of the manufacture of the wafer 2, the damage 103 may be arranged along a closed path surrounding the opening 20 to be created. Thus, in order to create the opening 20 in the spacer 4, it may be provided that in a further step the damage 103 is enlarged by an additional etching process as in the example of the manufacture of the wafer, said enlargement being performed to such an extent that a continuous break is created and the opening 20 in the closed path can thus be opened.

[0099] Here, the etching medium can be gaseous, but is preferably an etching solution. Thus, according to one embodiment, the etching is performed wet-chemically. This is advantageous for removing glass components from the inner surface of the damage during etching. This allows the sidewall 50 to be given or to be produced with a low roughness, particularly advantageously a dome-shaped depression, adapted to the requirements. Such depressions are, for example, part of the microstructuring 21 and are illustrated in FIG. 15 as circles and ellipses of different sizes.

[0100] Advantageously, the spacer 4 and / or the entire wafer 2 are exposed to this etching medium, so that, for example, several openings can be produced simultaneously or in one production step. For this purpose, both acidic and alkaline solutions can be used. As acidic etching media, in particular HF, HCl, H2SO4, ammonium bifluoride, HNO3 solutions or mixtures of these acids are suitable. As basic etching media, for example, KOH or NaOH lye solutions come into consideration. Ideally, the etching medium used is selected depending on the glass of the glass element to be etched.

[0101] In one embodiment, the ablation rate for setting the microstructuring can be adjusted by selecting the combination of the glass composition or the material composition of the spacer 4 and / or the wafer 2 with the composition of the etching medium. For example, for glasses with a high calcium content, an acidic etching medium is preferably selected, for example, and for glasses with a low calcium content, a basic etching medium is advantageously used. On the one hand, the ablation rate, i.e. the etching rate, is much higher in the case of acidic etching media and glasses with a high silicate content than in the case of basic etching media, but the acidic etching medium is also neutralized much more quickly by already dissolved substances, so that the etching medium is consumed or saturated with glass. Depending on the material composition of the spacer 4 and / or the wafer 2, an acidic etching medium can therefore be selected to set a high ablation rate, or a basic, in particular an alkaline, etching medium can be selected to set a low ablation rate.

[0102] However, in order to be able to better control the ablation, a slower ablation rate or basic etching medium is preferably selected. As a result, an ablation rate of less than 5 μm / h, preferably less than 4 μm / h, preferably less than 3 μm / h and / or more than 0.3 μm / h, preferably more than 0.5 μm / h, preferably more than 1 μm / h, preferably more than 1.5 μm / h, in particular 2 μm / h to 2.5 μm / h can be achieved. Such an ablation rate advantageously allows enough time even during the etching process to still affect the etching medium or the etching process.

[0103] Other variable etching parameters are, for example, the supply of additives and the temperature. A temperature between 40° C. and 150° C. is preferred, for example, as this temperature allows sufficient mobility of the dissolved ions or components of the material of the spacer 4 and / or the wafer 2.

[0104] Another factor is the time. For example, if the spacer 4 and / or the wafer 2 are exposed to the etching medium for several hours, in particular for more than 30 hours, or for example for only 10 hours, a relatively high degree of ablation can be achieved overall. On the other hand, it is also possible to limit the ablation by exposing the glass element to the etching medium for less than 30 hours, for example for only 10 hours. Overall, the ablation rate is determined by the temperature, the composition of the etching medium, the duration of the etching, and the composition of the material of the spacer 4 and / or the wafer 2. By setting a high ablation rate, in particular an ablation rate of more than 2 μm per hour, it is possible to achieve an average roughness value (Ra) of, for example, less than 15 nm.

[0105] Furthermore, it is also possible to provide for shielding of certain regions of the surface area of ​​the wafer 2 or spacer 4 from the etching medium, such as the folding area 13 of the wafer 2. This can be achieved, for example, by using a specific holder, which holds the wafer 2 or spacer 4 in the volume of the etching medium. Furthermore, specific shaping elements are also conceivable, which are placed on the wafer 2 or spacer 4 before the wafer 2 or spacer 4 is exposed to the etching medium. It is also possible to apply a protective layer, for example a polymer layer, to selected regions of the wafer 2 or spacer 4 before the wafer 2 or spacer 4 is exposed to the etching medium. In this way, it is possible to achieve average roughness values ​​(Ra) of less than 40 nm, preferably less than 25 nm, in these regions and thus a particularly smooth surface.

[0106] Based on this process, the sidewalls of the openings 20 of the wafer 2 and / or spacer 4 have a dome-shaped recess. The dome-shaped recess ideally forms a specific microstructuring 21 of the sidewall, which has several advantages. For example, the rounded structure or dome represents a particularly favorable shape for reducing the tensile stresses occurring at the edge surface to the deepest point of the sidewall surface, i.e. the deepest point of the dome. This effectively suppresses the growth of cracks at possible defects of the edge surface.

[0107] Advantageously, the proportion of the sidewall with convex regions is less than 5%, advantageously less than 2%. Ideally, therefore, the proportion of the sidewall with concave regions, i.e. with dome-shaped depressions, is more than 95%, advantageously more than 98%, of the sidewall surface. Concave here means that the bulge extends towards the wafer 2 / spacer 4, and convex here means that the bulge extends away from the wafer 2 / spacer 4, i.e. towards the opening 20. Ideally, the depth of the dome-shaped depression is typically less than 5 μm, with a lateral dimension advantageously between 5 and 20 μm.

[0108] It is further contemplated that the depth and size or dimensions of the dome can be altered by tailoring the ablation rate, for example, a flatter and wider dome can be formed at a higher ablation rate, resulting in a smoother sidewall surface.

[0109] To produce an encapsulated optoelectronic component 1, a plurality of optoelectronic components 9, a base element, in particular an etched wafer 2, with a cavity 6 and at least one cover element 5 can then be provided. The base element advantageously has a support 3 and a spacer 4, which form the cavity 6. These components can then be arranged one on top of the other. For this purpose, one or more optoelectronic components 9 are respectively arranged in the cavity 6, and the wafer 2 is arranged between the cover element 5 and the spacer 4, thereby providing a composite, in particular an encapsulated optoelectronic component 9. Here, at least one deflection element 14 or all deflection elements 14 are tilted into the cavity 6. In FIG. 16, such a composite is illustrated in cross section, where for clarity only a partial area of ​​the cavity 6 is shown with the components arranged therein and around, respectively.

[0110] The optoelectronic component 9 is advantageously arranged directly on the base element, substrate or particularly preferably on the support 3. However, it is also conceivable that the optoelectronic component 9 is respectively arranged on a submount, which in turn is arranged on the base element, substrate or particularly preferably on the support 3. In an alternative embodiment, the optoelectronic component 9 can also be arranged on a cover element 9. The cover element can generally have a thickness of 300 μm to 700 μm.

[0111] Each optoelectronic component 9 can furthermore be supplied with power, for example, via one or more electrical feedthroughs, which are provided in the base element, the substrate or the carrier 3. For example, at least one or more optoelectronic components 9 can be and may be connected to the feedthroughs by bonding wires. At least one or more optoelectronic components 9 can furthermore be formed as SMD components. In this case, solder balls can be applied to the feedthroughs. Naturally, here too many further constructional forms exist. In further possible constructional forms, for example, the carrier 3 itself can be a constituent element of the optoelectronic component 9, for example, if the carrier 3 is a semiconductor substrate on which the optoelectronic component 9 is formed. However, a power supply or even a capacitive energy supply to the optoelectronic component 9 via the carrier 3 is preferred.

[0112] In an embodiment, at least the cover element 5, the wafer 2 and / or the base element or the support 3 and the spacer 4 are provided with alignment marks, which also allows for precise positioning of these elements relative to one another. These alignment marks can be, for example, holes or markings. Thus, in a preferred embodiment, the cover element 5, the wafer 2 and / or the base element or the support 3 and the spacer 4 are joined to form a stack, and all elements of this stack are provided with alignment marks simultaneously or in parallel. In a further embodiment, this is done at the beginning of the manufacturing process. In this way, for example, the openings 20 of the wafer 2 and the spacer 4 can be positioned, in particular at a later time, in such a way that a common cavity 6 is formed by each opening 20 of the wafer 2 and the spacer 4. Furthermore, the precise positioning allows each deflection element 14 to be tilted into one of these cavities 6.

[0113] In an embodiment, the deflection element 14 can be tilted into the cavity 6, for example in the course of or during the positioning or connection of the components of the encapsulated optoelectronic component 1, for example towards the base element, substrate or support 3 or the cover element 5 or downwards or upwards. This can be done naturally, in particular by gravity or by attraction, on the one hand, or by applying a force. Such a force can be applied, for example, by a pressure element. Such a pressure element can be used before the cover element 5 is applied to the wafer 2. However, the pressure element can also be part of the cover element 5, for example in the form of a protrusion 60, which protrudes into the cavity 6, in particular by means of which the deflection element 14 is pressed into the cavity 6. This case is illustrated in FIG. 17. Here, the protrusion 25 is arranged on the cover element in such a way that, while the cover element 5 is being placed on the wafer 2, the protrusion 25 presses against the optical region 30 of the deflection element 14, and as a result of the pressing, the deflection element 14 is folded into the cavity 6. In other words, the deflection element 14 is formed in such a way that it can be folded or tilted into the cavity 6 before or during the mounting of the cover element 5. In this way, it is advantageously not necessary to position the deflection element 14 in the application-dependent position later, i.e. after mounting. According to a particularly preferred alternative or additional embodiment, the folded deflection element 14 is fixed to the support 3. For this purpose, for example, a fastening element 26 can be provided, which fastens the deflection element 14, for example, at its edge facing the material-weakening structure 16 on the support 3. In a simple embodiment, the deflection element can in this case simply be glued to the support 3. In this case, the fastening element 26 accordingly comprises an adhesive or an adhesive in general, in particular in the form of an organic adhesive. Alternatively or additionally, the deflection element 14 can be fixed to the support 3 at its edge facing the material-weakening structure 16 by laser bonding, glass solder or metal solder.Generally, the same methods for connecting the elements of the wafer composite can be used.

[0114] In an advantageous embodiment, the deflection element 14 has at least a beveled edge 22, the area of ​​which advantageously extends at an angle of 100° to 170° relative to the surface area 2a of the wafer 2, but in particular relative to the optical area 30 of the deflection element 14. Such a case is shown diagrammatically in FIG. 18. Preferably, this beveled edge 22 is located opposite a complementary internal area 23 of the wafer 2. Advantageously, the beveled edge 22 is also arranged laterally, in particular perpendicular to a bending axis of the deflection element 14, for example the first axis 31. By providing the beveled edge 22 on the outside of the deflection element 14, a tilt of the deflection element 14 on the wafer 2 during bending, tilting or folding can be effectively avoided.

[0115] To generate such an inclined edge 22, it is advantageous if the incident energy of the laser beam 100 generates filamentary damage 103 in the volume of the wafer 2 in the region of at least a portion of a path, the length of which extends at an angle of 80° to 10° with respect to the surface area 2a of the wafer 2, in particular not perpendicular to the surface area 2a. In other words, a cut is generated obliquely, not perpendicularly, to the surface areas 2a, 2b.

[0116] Likewise, it is also possible to generate a beveled edge 22 on the spacer 4, as shown, for example, in FIG. 19. It is thus possible to provide that the spacer 4 has at least the beveled edge 22, the region of which advantageously extends at an angle of 100° to 170° relative to the support region 24. The beveled edge 22 of the spacer 4 can serve to interrupt the deflection element 14 when bending or to limit the bending or tilting angle of the deflection element 14. In such a case, the beveled edge 22 of the spacer provides the maximum angle through which the deflection element 14 can be moved. The deflection element 14 can therefore be mounted on the spacer 4, in particular the deflection element 14 can be mounted on the beveled edge 22 of the spacer 4. In this case, a fixing element 26 can also be provided, which connects the deflection element 14 to the beveled edge 22.

[0117] Furthermore, it is also possible to provide a permanent joining of the cover element 5, the wafer 2 and the base element, for example, the individual elements can be connected to one another by gluing or bonding, in particular anodic bonding. Preferably, each element is welded by an ultrashort pulsed laser, and all elements are welded at different depths by changing the focus and are thus connected to one another in a single work step. In this case, the focus of the laser can be directed in particular to the contact areas of the two components of the composite or sealing part 1, respectively. In this case, the material at the focus of the laser is melted and thus the contact areas are connected to one another. For example, the contact areas of the cover element 5 and the wafer 2 and / or the wafer 2 and the base element or substrate. However, it is also possible to direct the focus to the contact areas of the support 3 and the spacer 4. In this way, all the required contact areas or components can be connected to one another in a liquid-tight, in particular hermetically sealed, state.

[0118] The ultrashort pulsed laser welding process has the advantage that it is possible to work at different depths in the component stack by changing the focusing, i.e. a (common) single expansion process of the components and / or wafers used is sufficient to enable the creation of a permanent seal. However, classical methods such as gluing, blasting, bonding or fusion with glass frits can also be used to create a permanent hermetic connection between the components.

[0119] An advantageously final step for producing the encapsulated optoelectronic components 9 provides for the formation of individual encapsulated optoelectronic components 9 by singulation of the composite of encapsulated optoelectronic components 9 along parting lines 45 between the cavities 6. These parting lines 45 can extend, for example, in such a way that the encapsulated optoelectronic components 1 are obtained by cutting off parts 40 from the composite, as shown in Fig. 14. In this way, a plurality of individual encapsulated optoelectronic components 1 can be produced in a simplified manner, so that in particular the individual production or subsequent processing of the individual components can be dispensed with.

[0120] Thus, preferably, the sealed optoelectronic component 1 is manufactured or can be manufactured from a composite of sealing components 1 and comprises a housing, which surrounds, in particular hermetically, at least one optoelectronic component 9. The housing is preferably formed from a base element, in particular a base element having a support 3 and at least one spacer 4. In particular, the spacer 4 has at least one opening 20, which defines a cavity 6, which is preferably formed by side walls 50. The cavity 6 is surrounded on the lower side by the support 3 and on the upper side by the cover element 5. The optoelectronic component 9 is thus arranged in the cavity 6, in particular between the side walls 50, preferably between the cover element 5 and the support 3.

[0121] Advantageously, the optoelectronic component 9 comprises or is an edge-emitting diode, in particular a laser diode (EELD). The EELD can emit light in the blue VIS range according to one development. Such laser diodes usually emit wavelengths of about 400 nm to 500 nm. However, diodes emitting at least one of the wavelengths 405 nm, 445 nm, 473 nm and / or 485 nm are particularly preferred. However, in other embodiments, other wavelengths can also be used, for example wavelengths of 500 to 800 nm, or wavelengths in the infrared range, in particular in the near infrared range and the mid-infrared range, or wavelengths shorter than 400 nm, for example in the ultraviolet range. Due to their technology, such EELs must be hermetically sealed from the environment, which is achieved by the housing. One important field of application can for example be laser lighting, in which blue laser light can be converted to other wavelengths by means of a phosphor converter and diffused. Laser diodes can therefore operate in the mW to W range, for example from 3 mW to 5 W. The dimensions of the laser diode may vary from 500 μm to 2000 μm in length, 500 μm to 1000 μm in width and advantageously about 100 μm in height, for example 50 μm to 300 μm. The cavity 6 therefore has length, width and height dimensions which are greater than the dimensions of the optoelectronic component 9 such that the optoelectronic component 9 fits optimally into the cavity 6.

[0122] In one embodiment, a spacer 4 is fastened to the carrier 3 on the side with the optoelectronic component 9, and preferably a one-piece plate element 8 with at least one tongue-shaped deflection element 14 is fastened to the spacer 4. In this case, the plate element 8 comprises the same material as the wafer 2, since it emerged from the wafer 2 during the singulation process. Advantageously, a cover element 5 is arranged on the plate element 8, or a further plate element 8 is arranged, on which a cover element is present. Thus, at least one plate element 8 with at least one tongue-shaped deflection element 14 is provided between the spacer and the cover element.

[0123] In this case, in particular, light 70 emitted by the optoelectronic component 9, in particular a laser diode, can traverse the cavity 6. This light can then be incident on the side wall 50 facing the optoelectronic component 9 and / or on the deflection element 14, which is arranged in the cavity 6 in such a way that it can deflect the light 70 in at least one optical region 30. An example in this respect is shown in Fig. 20. It is provided that the light 70 is deflected by the deflection element 14, so that the deflected light 71 travels in the direction of the cover element 5 and in particular exits the encapsulated optoelectronic component 1 through the cover element 5.

[0124] In one embodiment, the cover element 5 can be used to introduce further optical elements into the beam path. For example, the surface of the cover element 5 can have trenches by structuring in a laser ablation process. The trenches can then be filled with further optically active material to generate, for example, a (phase) grating. In this way, the optical quality can be improved, in particular a sufficiently low roughness can be generated to avoid scattering. By means of the phase grating thus generated, the wavefront of the emitted (laser) light 70 and thus the beam shape can be adapted for further use in the optical setup already at the start of the emission process. On the other hand, it is also possible to smooth the structured surface by means of an acid or alkaline etching process. Other forms of structuring are possible as well, such as introducing convex or concave curved surfaces into the cover element 5.

[0125] In a particular embodiment, it is also advantageously possible to apply to the cover element 5 a liquid lens known from the prior art, the geometry of which can be variably adjusted by applying an electric field so that the beam of the EELD can be flexibly adjusted. This then requires in particular at least one further spacer which can be arranged between the two cover elements 5. In this way, a liquid lens can be realized between the two cover elements.

[0126] In an advantageous embodiment, the deflection element 14 has at least one of the following characteristics: the deflection element 14 can be reversibly folded into the cavity 6; the deflection element 14 can be tilted or oblique so that the optical area 30 of the deflection element 14 can deflect the electromagnetic radiation, in particular the light 70, in the direction of the cover element 5 or the optoelectronic component 9, the optoelectronic component 9 receiving or emitting the electromagnetic radiation laterally, so that the electromagnetic radiation is incident on the optical area 30 in an oblique manner, in particular at an angle that is not 90°; The folded deflection element 14 is fixed to the support 3 .

[0127] The reversible folding of the deflection element 14 into the cavity 6 allows the deflection element 14 to be precisely adjusted to a predefined angle. In this way, the light 71 deflected by the deflection element 14 can also be emitted at a predefined angle. Overall, the thickness of the spacer 4 and the deflection element 14 as well as its spatial extent determine the maximum tilt angle of the deflection element 14 and thus the range of solid angles that the laser beam can reach. In FIG. 19, the maximum tilt angle of the deflection element 14 in the direction of the spacer 4 is determined, for example, by the inclined edge 22 of the spacer 4, on which the deflection element 14 can, for example, be placed. In another constructional form, it is provided that the thickness of the spacer 4, i.e. in particular the height of the side wall 50, is smaller than the length of the deflection element 14. In this way, it can be ensured that the deflection element 14 in the maximum tilt state is not perpendicular but oblique to the propagation direction of the laser beam or of the light beam 70 emitted by the diode.

[0128] In a further embodiment, the deflection element 14 has a wedge angle. If the surface conditions are suitable, and in particular the two surfaces of the deflection element 14 with the wedge angle are appropriately coated, it is possible to achieve that a part of the light 70 emitted by the EELD is reflected at the optical region 30 of the deflection element 14, while the remaining part is reflected only at the second surface after traversing the deflection element 14, so that the two partial beams exit the housing at different angles or, in the case of a wedge angle of 0°, at the same angle.

[0129] Therefore, in order to allow a flexible design of the optical properties of the deflection element 14, at least one of the following features is provided: at least the optical area 30 of the deflection element 14 is formed as a mirror area, at least the optical region 30 of the deflection element 14 is structured and / or coated, The coating comprises a layer system of dielectric materials, metals and / or dielectric layers.

[0130] The aforementioned options for designing the deflection element 14 therefore also make it possible to precisely adjust the optical properties of the deflection element 14 in relation to a given wavelength and / or application. The optical properties of the deflection element 14 can therefore be designed in particular wavelength-dependent, advantageously so that for example a laser beam of a first wavelength λ1 incident on the optical region 30 is reflected by the optical region 30 and a beam of a second wavelength λ2 is transmitted through the optical region 30. This is advantageous, for example, when laser diodes capable of emitting second or third harmonics are used or when light from different light sources / wavelengths is combined. Such an approach is advantageous, for example, in projection and display technology.

[0131] It is also advantageous if the angle of the electromagnetic radiation or the deflected light 71 deflected by the deflection element 14 can be reversibly changed or controlled by at least one actuator 80 during operation of the optoelectronic component 9. It is therefore conceivable or provided that the at least one actuator 80 is arranged on the side opposite to the entrance side of the electromagnetic radiation, i.e. behind the deflection element 14, such that the position of the deflection element 14 can be changed by the actuator 80. This embodiment is shown for example in Fig. 20 and Fig. 21, where the actuator can comprise at least one piezo element, which can be for example a piezo crystal or a piezo ceramic. Piezo elements are particularly suitable for such applications, since their dimensions are small enough that their movement or deflection can be precisely controlled.

[0132] In other words, in an embodiment, at least one actuator / piezo element 80 is arranged in the propagation direction of the laser beam of the diode or optoelectronic component 9 behind the deflection element 14. Depending on the geometric size and thickness of the deflection element 14, one actuator / piezo element 80 may be sufficient. In the case of thicker deflection elements 14, for example more than 0.6 mm, one actuator 80 is sufficient. In the case of thinner deflection elements 14, for example less than 0.6 mm, several actuators / piezo elements 80 are required due to the low dimensional stability. In the case of very thin deflection elements or wafers 2 or plate elements 8 with a thickness of less than 200 μm, the material weakening structure 16 can even be omitted, since the wafers 2 or plate elements 8 are generally more flexible. In this case, the deflection element 16 naturally bends into the cavity, i.e. in particular due to its own weight. Here, several actuators / piezo elements 80 are required in this case, which can advantageously also serve as support elements in this case. Generally, the deflection element 14 may be connected to the actuator by means of at least one fastening element 26. In this case, the fastening element 26 may in particular have an elastic adhesive that allows a predefined angular change without the deflection element 14 becoming detached from the actuator 80.

[0133] The one or more actuators 80 ensure a repeatable movement / bending of the deflection element 16 and its reproducible final positioning. This allows the deflection element 16 to be positioned at different tilt / bending angles and thus also the exit position and exit angle of the laser beam to be flexibly adjusted statically or dynamically, in particular after the mounting of the encapsulated optoelectronic component 1. This is particularly advantageous in the subsequent application, for example to be able to compensate for manufacturing tolerances.

[0134] The actuator 80 behind the folding element also allows a flexible setting of at least two different beam paths, for example by arranging a further fixed deflection mirror or prism behind the deflection element 16 or a feed-through to a further deflection element 16. In particular, a cascading of the structure shown diagrammatically in FIG. 21 is thus possible, in which a partial beam of the light 70 is deflected by the deflection element 16 and a further partial beam passes in the direction of the side wall 50, in particular through the side wall 50. The deflection element 16 is in this case tilted in the direction of the side wall to such an extent that a partial beam of the light 70 emitted by the diode can still pass between the deflection element 16 and the support 3. In this way, for example, several optical components can be connected in series.

[0135] In a further embodiment, above the hole drilled in the spacer element 4 or behind the deflection element 16 after the hole has been drilled, there is a further optoelectronic component, for example a monitor diode, which receives and evaluates the portion of the light 70 that reaches the rear of the deflection element 14 and provides a regulation or control signal for controlling the optoelectronic component 9.

[0136] In other embodiments, for example, the deflection element 16 can be tilted towards the side wall 50 to such an extent that the deflection element 16 is adjacent to the support 3 .

[0137] During static positioning of the deflection element 16 a given tilt angle is approached and maintained, but dynamic positioning, e.g., by at least one actuator 80, can scan the laser beam over a range of angles, in which case the encapsulated optoelectronic component can be used, e.g., as a miniature scanner.

[0138] Advantageously, each deflection element 14 has at least one deflection portion 33 and one positioning portion 34, which are spaced apart from one another by a material-weakening structure 16 such that the deflection portion 33 can be tilted or bent about a first axis 31 and the positioning portion 34 can be bent about a further axis arranged parallel to the first axis 31. In this case, the at least one actuator 80 can be arranged below the positioning portion 34, i.e. between the positioning portion 34 and the base element or support 3.

[0139] Such an embodiment is shown in Fig. 22. Accordingly, the actuator 80 is arranged between the positioning part 34 and the support 3, in particular on the support 3 or on the base element. In this configuration, the actuator 80 can be particularly easily supplied with a voltage, in particular if the support or the base element is made electrically conductive or has a conductive path or an electrical feed-through. By means of the actuator 80, the positioning part 34 can be moved upwards, in particular towards the cover element 5. In this way, the deflection part 33 connected to the positioning part 34 also moves together with the optical region 30, whereby the tilt angle of the deflection element 14 or of the deflection part 14 is advantageously changed.

[0140] FIG. 23 shows the deflection element 14 of FIG. 22 in a top view with the adjacent void 6. The cuts used to produce the deflection element 14 and the void 6 from the wafer 2, in particular the surrounding wafer 2, are shown. For better understanding, each of the elements shown are respectively labeled with a reference number, the cuts or paths being labeled 10, 11, 12 and the final produced element, e.g. the deflection element, being labeled 14. Thus, the closed path 10 is cut to produce the opening 20 in the wafer 2 and the subsequent void 6. Two open paths 11 are cut, each adjacent to the closed path 10, to enlarge the opening 20 or the void 6 and to separate the deflection element 14 from the wafer 2 at these points.

[0141] In this case, two open paths 11 are arranged at a distance from one another and preferably each have an end point at a corner of the closed path 10. The connecting path 12, which characterizes the material-weakening structure 16, is arranged between the other two corner points of the open path 11. A further material-weakening structure 16 is arranged between the open paths 11, such that a deflection section 33 is formed between two, in particular parallel to one another, material-weakening structures 16 or connecting paths 12. The two structures 16 thus form a bending axis, preferably a first axis 31, between the ends of the open path 11. The positioning section 34 is thus connected to the deflection section 33 via the material-weakening structure 16 and / or forms the outer part of the deflection element 14.

[0142] In an advantageous embodiment, the or each deflection element 14 can have at least two deflection sections 33, which are spaced apart from one another via material-weakening structures 16 such that the first deflection section 33 can be tilted or bent about a first axis 31 and the second deflection section 35 can be tilted or bent about a second axis 32, which is arranged at an angle to the first axis 31, in particular transversely or perpendicularly to the first axis 31. Under each deflection section 33, 35, in this case at least one actuator 80 can be arranged, which allows the angle of the beam 71 deflected by the deflection element 14 to be statically or dynamically flexibly adjusted in at least two axes. It is thus possible to position and align the laser beam in two mutually independent directions and thus in the xy plane.

[0143] Such an embodiment is shown, for example, in a top view in Fig. 24. As in Fig. 23, corresponding cuts or paths 10, 11, 12 are shown in Fig. 24 as well. The closed cut / closed path 10 again forms an opening 20 / void 6. Adjacent to it is respectively a corner point of the open cut / open path 11 and in particular one end of the connecting path 12 / material weakening structure 16. The two deflections 33, 35 result from the two connecting paths 12 or two elongated material weakening structures 16 being arranged laterally, in particular perpendicular to each other.

[0144] Alternatively, it is also possible to generate a laterally curved or, in particular, vertically folded material weakening structure 16 / connection path 12. In this way, the two deflection parts 33, 35 are connected to one another at the material weakening structure 16, and the second deflection part 35 can be tilted with respect to the first deflection part 33 in the second axis 32. In particular, only the first deflection part 33 is connected to the wafer 2 or to the plate element 8 via the material weakening structure 16. Advantageously, the deflection element 14 is arranged in the cavity 6 in such a way that the light 70 of the optoelectronic component 9 is deflected by the second deflection part 35, which can be tilted advantageously via the second axis 32. In other words, the second deflection part 35 can be tilted indirectly via the first axis 31 and the second axis 32, so that the light 30 can also be deflected in two mutually independent directions. Thus, at least the second deflection part 35 also has an optical area 30, which can deflect the light 30. However, it can also be provided that the two deflection parts 33, 35 each have an optical area.

[0145] Generally, without being limited to the illustrated example, the material weakening structures 16 can be arranged in the same plane, i.e. directly above the side wall 50 of the spacer 4, or offset with respect to the length of the cavity 6, in particular towards the optoelectronic component 9. In this way, the deflection element 14 can be arranged closer to the optoelectronic component 9 or the distance from one another can be adjusted. If the plate element 8 or the wafer 2 is sufficiently thin or flexible, in particular in the embodiments of Figures 22 to 24, the material weakening structures 16 can also be omitted, in particular so that the deflection part 33 and the positioning part 34 or the two deflection parts 33 are directly connected to one another.

[0146] In the previous figures, the deflection element 14 has been shown in the shape of a rectangle or a square. In figures 25 to 28, various other geometrical construction forms of the deflection element 14 are shown. In figure 25, for example, a trapezoidal deflection element 14 is shown, in figure 26 a partially elliptical deflection element 14 is shown, in figure 27 a partially circular deflection element 14 is shown, and in figure 28 a triangular deflection element 14 is shown. Other geometric shapes, such as polygonal or mixed shapes, are likewise conceivable.

[0147] In a further embodiment, a second one in the form of a structured wafer 2, which also has deflection elements 14, is integrated into the composite, which deflection elements 14 are preferably rotated by 90° with respect to the alignment of the first deflection element 14, so that the laser beam can be positioned and aligned in two mutually independent directions and thus in the xy-plane. This variant allows a construction of the encapsulated optoelectronic component 1 as shown in FIG. 29. Here, a spacer 4 is arranged between the carrier 3 and the plate element 8, and a further spacer 4 is arranged between the two plate elements 8. As a result, one plate element 8 is arranged higher than the other plate element 8. In this case, one deflection element 14 is arranged higher than the other deflection element 14, since in each case one deflection element 14 is arranged on each plate element 8.

[0148] In this case, the optoelectronic component 9 is advantageously arranged so that the light emission direction is not perpendicular to the first axis but at an angle, preferably at an angle between 5° and 70°, preferably at an angle between 20° and 55°, particularly preferably at an angle between 40° and 50°. As a result, the light can be deflected at each deflection element 14 at an angle of, for example, 40° to 50°. In particular in this case, the first axes or bending axes of the two deflection elements 14 are arranged at an angle between 80° and 100°, in particular at an angle of 90°, relative to one another. However, other angle combinations are also conceivable and can be easily derived by the skilled person.

[0149] In the previous embodiments, the folding element remains connected to the surrounding wafer or glass element. However, embodiments are also conceivable in which the deflection element 14 is separated from the wafer 2 by breaking. In this case, instead of the bent material weakening structure 16, there are respectively complementary breaking edges on the wafer and on the deflection element 14, which are at a corresponding angle to each other due to the folding of the deflection element 14, as shown in Figures 16, 17, 19 to 22. Thus, according to an alternative embodiment of the invention, a composite of encapsulated optoelectronic components 1 is provided, which composite forms a housing with at least one base element and one cover element 5, in each of which a plurality of optoelectronic components 9 are arranged in a respective cavity 6, which cavity 6 is formed by the base element and is covered on the upper side by the cover element 5, so that the optoelectronic components 9 are arranged between the cover element 5 and the base element, which base element forms in particular a side wall 50 laterally surrounding each of the cavity 6, and which comprises a substrate and / or carrier 3 with a recess which defines the cavity 6, and A composite is provided, which includes a spacer 4 having an opening 20 defining a cavity 6 arranged thereon, a one-piece structured wafer 2 arranged between the cover element 5 and the base element, such that in each cavity 6 a tongue-shaped deflecting element 14 having at least one optical area 30 is arranged, by means of which electromagnetic radiation emitted or received by the optoelectronic component 9 can be deflected, the deflecting element being arranged at an incline relative to the one-piece structured wafer 2, the deflecting element and the one-piece structured wafer 2 having complementary break areas that are inclined to each other depending on the angle of the deflecting element relative to the one-piece structured wafer 2 (by separation by breaking).Thus, in that case, by cutting off, an individualized sealed optoelectronic component 1 is obtained, which comprises a housing and at least one optoelectronic component 9, which is arranged in a cavity 6, which is formed by a base element and covered on the upper side by a cover element 5, so that the optoelectronic component 9 is arranged between the cover element 5 and the base element, which forms a side wall 50 that laterally surrounds the cavity 6, and which comprises a substrate and / or support 3 with at least one recess 90 that defines the cavity 6, as well as a spacer 4 arranged thereon. The spacer 4 has at least one opening 20 defining a cavity, a one-piece plate element is arranged between the cover element 5 and the base element, and within the cavity 6 a deflection element 14 is arranged having at least one optical region (30) separated from the one-piece plate element and arranged at an angle relative to the one-piece plate element, the optical region (30) being capable of deflecting electromagnetic radiation emitted or received by the optoelectronic component (9), the deflection element 14 and the one-piece plate element having complementary break regions that are inclined to each other depending on the angle of the deflection element relative to the one-piece plate element (by separation by breaking).

[0150] The above-described embodiments should be understood as illustrative, and the present invention is not limited thereto, and it is obvious to those skilled in the art that various modifications can be made without departing from the scope of protection of the claims. Furthermore, it is also obvious that a feature, even if described together with other features, whether or not disclosed in the specification, claims, drawings, etc., alone defines an essential component of the present invention. In all drawings, the same reference signs represent the same objects, and therefore the description of an object that is sometimes mentioned in only one drawing, or in any case not mentioned in all drawings, can also be transferred to the drawings in which the object is not explicitly described in this specification.

[0151] Reference sign 1. Encapsulated optoelectronic components 2 Wafer 2a area 2b area 3 Support 4 Spacer 5 Cover Element 6 Vacancies 7 Edge of deflection element 8 Plate Element 9. Optoelectronic Components 10 Closed Paths 11 Open Path 12 Connection Path 13. Folding Area 14 Deflection Element 15 Second Part 16 Material weakening structure 17 Maximum width of recess 18 Minimum width of recess 19a Web Smallest Part 19b Maximum web 20 Opening 21 Microstructuring 22 Sloping Edge 23 Complementary internal regions 24 Support area 25 Protrusion 26 14 fixed elements 30 Optical area 31 First Axis 32 Second Axis 33 First deflection section 34 Positioning part 35 Second deflection section 40 portions 45 Separation line 50 side wall 52 Flat area 60 protrusions 70 light 71 Deflected Light 80 Actuator 90 Recess 91 Recessed Row 92 The First Web 94 The Second Web 95 Border 96 Linear Segments 100 Laser Beam 101 Ultrashort Pulse Laser 102 Condensing optical system 103 Filamentous Lesions 104 Partial area 150 Light Beam 200 Prior art structural forms 201 Ceramic substrate 202 Submount 203 Laser Diode Chip 204 Window 205 Lid 206 Adhesive 207 Mirror Prism 300 Etching medium B. Horizontal L Longitudinal D Wafer thickness

Claims

1. a structured wafer (2) for manufacturing a composite of encapsulated optoelectronic components (9) with deflection elements (14) for deflecting electromagnetic radiation, the structured wafer (2) being plate-shaped and extending in a longitudinal direction L and a transverse direction B and having two opposing surface areas (2a, 2b) and having a plurality of openings (20) arranged in a grid-like distribution and spaced apart from one another in the longitudinal direction L and the transverse direction B, in the area of ​​each opening (20) defining at least one tongue-shaped bending area (13), which can be bent to form a respective tongue-shaped deflection element (14) with at least one optical area (30), the tongue-shaped deflection elements (14) being reversibly and permanently deformable as part of the one-piece structured wafer (2) so that each deflection element (14) can be repeatedly tilted or bent about at least one first axis (31); Structured wafer (2).

2. the optical area (30) of at least one deflection element (14) is formed in a planar shape, The structured wafer of claim 1 .

3. Features include: each deflection element (14) is connected to the structured wafer (2) through a portion having a material-weakening structure (16), so that the deformation force required to bend the wafer material in said portion is less than in the non-structured portion; Each deflection element (14) is connected to the structured wafer (2) via at least one cuttable partial area, so that the deflection elements (14) remain connected to the structured wafer (2) in particular only via the material-weakening structures (16) after cutting of the partial areas. characterized by at least one of The structured wafer of claim 1 .

4. Features include: the material-weakening structure (16) has a recess (90) extending partly through the wafer material along the thickness D of the structured wafer (2), the recess (90) penetrating only one of the face areas (2a, 2b); the material-weakening structure (16) has a recess (90) extending completely through the wafer material along the thickness D of the structured wafer (2), the recess (90) penetrating two opposite surface areas (2a, 2b); - said material weakening structures (16) have recesses (90) arranged side by side such that the areas between which said material weakening structures (16) are arranged are connected to one another via webs (92, 94); the recess (90) is elongated, the longitudinal direction of which advantageously runs parallel to the tilt or bending axis of the deflection element (14), in particular to the first axis (31); - the recesses (90) are arranged in rows along the direction of the tilt or bending axis; - the rows of recesses (90) are offset from one another characterized by at least one of The structured wafer of claim 3.

5. each deflection element (14) has at least two deflection sections (33, 35) that can tilt or bend the first deflection section (33) about the first axis (31) and the second deflection section (35) about a second axis (32), the second axis (32) being spaced apart from one another via material weakening structures (16) that are arranged at an angle to the first axis (31), in particular transversely or perpendicularly to the first axis (31); The structured wafer of claim 1 .

6. each deflection element (14) has at least one deflection portion (33) and one positioning portion (34) spaced apart from one another via a material weakening structure (16) such that the deflection portion (33) can be tilted or bent about the first axis (31) and the positioning portion (34) can be bent about a further axis arranged parallel to the first axis (31); The structured wafer of claim 1 .

7. A composite of sealed optoelectronic components (1), said composite forming a housing with at least one base element and one cover element (5), in which a plurality of optoelectronic components (9) are arranged in each cavity (6) of the housing, said cavity (6) being formed by said base element and covered on the upper side by said cover element (5), so that said optoelectronic components (9) are arranged between said cover element (5) and said base element, said base element forming a side wall (50) laterally enclosing each cavity (6), said base element in particular being a substrate having a recess that defines said cavity (6). and / or a support (3) and a spacer (4) arranged thereon with an opening (20) that defines the cavities (6), wherein between the cover element (5) and the base element a one-piece structured wafer (2) is arranged, in particular as defined in claim 1, the structured wafer (2) having tongue-shaped deflecting elements (14), so that in each cavity (6) a tongue-shaped deflecting element (14) is arranged with at least one optical region (30) that is folded or can be repeatedly tilted or bent about at least one first axis (31), and by means of the optical region (30) electromagnetic radiation emitted or received by the optoelectronic component (9) can be deflected. Complex.

8. Features include: the structured wafer (2) has a thickness D in the range of 0.03 mm to 1.3 mm, advantageously in the range of 0.05 mm to 0.4 mm; the spacer (4) has a thickness in the range of 0.3 mm to 3.0 mm, advantageously in the range of 0.7 mm to 2.6 mm, particularly preferably in the range of 0.7 mm to 1.5 mm; - said support (3) has a thickness ranging from 0.3 mm to 3.0 mm; The cover element (5) has a thickness in the range of 0.1 mm to 2.0 mm, advantageously in the range of 0.2 mm to 1.2 mm, particularly preferably in the range of 0.3 mm to 0.8 mm. characterized by at least one of The complex of claim 7.

9. Features include: - said structured wafer (2) comprises or consists of glass, glass ceramic, ceramic, metal, plastic or a mixture of these materials; said support (3) or substrate comprises or consists of glass, glass ceramic and / or ceramic, - the base element or the spacer (4) comprises or consists of glass, glass ceramic and / or ceramic, - said cover element (5) comprises or consists of glass, in particular glass that is transparent to electromagnetic radiation; - said cover element (5) comprises or consists of tempered and / or hardened glass characterized by at least one of The complex of claim 7.

10. An encapsulated optoelectronic component (1) producible from the composite of claim 7, the encapsulated optoelectronic component (1) comprising a housing and at least one optoelectronic component (9), the optoelectronic component (9) being arranged in a cavity (6), the cavity (6) being formed by a base element and covered on the upper side by a cover element (5), so that the optoelectronic component (9) is arranged between the cover element (5) and the base element, the base element forming a side wall (50) laterally surrounding the cavity (6), the base element covering the cavity (6), and the optoelectronic component (9) being arranged between the cover element (5) and the base element. a substrate and / or support (3) having at least one recess (90) defining a cavity (6) and a spacer (4) arranged thereon having at least one opening (20) defining the cavity, wherein a one-piece plate element having at least one bent tongue-shaped deflecting element (14) between the cover element (5) and the base element is arranged such that the tongue-shaped deflecting element (14) has at least one optical region (30) within the cavity (6), and the optical region (30) is arranged to deflect electromagnetic radiation emitted or received by the optoelectronic component (9). Encapsulated optoelectronic components (1).

11. Features include: at least the optical area (30) of the deflection element (14) is formed as a mirror area; at least the optical area (30) of the deflection element (14) is structured and / or coated; the coating comprises a layer system of dielectric materials, metals and / or dielectric layers characterized by at least one of 11. The encapsulated optoelectronic component of claim 10.

12. Features include: - said deflection element (14) can be reversibly folded into said cavity (6); the deflection element (14) can be tilted or oblique in such a way that the optical area (30) of the deflection element (14) can deflect the electromagnetic radiation in the direction of the cover element (5) or the optoelectronic component (9), the optoelectronic component (9) receiving or emitting the electromagnetic radiation laterally, so that the electromagnetic radiation is incident on the optical area (30) in an oblique manner; - said folded deflection element (14) is fixed to said support (3); - the deflection element (14) is deformed and / or deformable, in particular the deflection element (14) has a concave or convex shape; characterized by at least one of 11. The encapsulated optoelectronic component of claim 10.

13. characterised in that the angle of the electromagnetic radiation deflected by the deflection element (14) can be reversibly changed or controlled by at least one actuator (80) during operation of the optoelectronic component (9), 11. The encapsulated optoelectronic component of claim 10.

14. at least one actuator (80) is arranged on the side opposite to the incident side of the electromagnetic radiation, i.e., behind the deflection element (14), so that the position of the deflection element (14) can be changed by the actuator.

14. The encapsulated optoelectronic component of claim 13.

15. Features include: the deflection element (14) has at least two deflection sections (33, 35), the first deflection section (33) being tiltable or bendable about the first axis (31) and the second deflection section (35) being tiltable or bendable about a second axis (32), the second axis (32) being spaced apart from one another via material weakening structures (16) at an angle to the first axis (31), in particular arranged transversely or perpendicularly to the first axis (31), and at least one actuator (80) being arranged below each deflection section (33, 35), by means of which the angle of the beam deflected by the deflection element (14) can be adjusted statically or dynamically in a flexible manner in at least two axes; each deflection element (14) has at least one deflection part (33) and one positioning part (34) spaced apart from one another via a material weakening structure (16) such that said deflection part (33) can be tilted or bent about said first axis (31) and said positioning part (34) can be bent about a further axis arranged parallel to said first axis (31), and at least one actuator (80) is arranged below said positioning part, i.e. between said positioning part (34) and said base element; characterized by at least one of 11. The encapsulated optoelectronic component of claim 10.

16. A method for producing an encapsulated optoelectronic component, in particular according to claim 10, comprising: - creating a cut in at least one of said surface areas (2a, 2b) of the plate-like wafer (2), - creating cuts on said structured wafer (2) along predetermined, mutually spaced closed paths (10); - creating cuts on said structured wafer (2) along predetermined, spaced apart connection paths (12); the break in the closed path (10) extends through the structured wafer (2) from one surface area (2a) to the opposite surface area (2b), - the breaks in the connection paths (12) create material weakening structures (16) such that adjacent to each connection path (12) an area is formed that forms a tongue-like folding region (13) that remains at least indirectly connected to the structured wafer (2); - providing a base element having a plurality of optoelectronic components (9), a cavity (6), said structured wafer (2) and at least one cover element (5), - producing a composite of encapsulated optoelectronic components (1), in particular a composite according to claim 7, by arranging one optoelectronic component (9) in each cavity (6) and arranging the structured wafer (2) between the cover element (5) and the base element, - tilting at least one bending region (13) so that at least one deflection element (14) or all deflection elements (14) are tilted into the cavity (6); - singulation of the composite of encapsulated optoelectronic components (1) along the separation lines (45) between said cavities (6) to obtain individual encapsulated optoelectronic components (1); method.

17. characterised in that at least the cover element (5), the structured wafer (2) and / or the base element or the support (3) and the spacer (4) are provided with alignment marks, which allow for accurate positioning of the elements relative to one another, 17. The method of claim 16.

18. 1. The method of claim 1, wherein the cover element (5), the structured wafer (2) and the base element are welded by an ultrashort pulse laser, and all elements are welded at different depths by varying the focus, thereby connecting them to each other in a single working step.

17. The method of claim 16.

19. The incident energy of the laser beam in the region of at least a portion of the path (10, 11) generates filamentary damage (103) in the volume of the structured wafer (2), the length of the filamentary damage (103) extending at an angle of 80° to 10° with respect to the surface regions (2a, 2b) of the structured wafer (2), in particular not extending perpendicularly to the surface regions (2a, 2b), 17. The method of claim 16.

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