Display device and electronic apparatus

Abstract

To provide a display device whose image quality can be increased with low power consumption.SOLUTION: A display device has a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitor element, and a second capacitor element. One electrode of the light-emitting element is electrically connected to one of a source and a drain of the first transistor. One electrode of the light-emitting element is electrically connected to one electrode of the first capacitor element. A gate of the first transistor is electrically connected to one of a source and a drain of the second transistor. The gate of the first transistor is electrically connected to one electrode of the second capacitor element. The other electrode of the second capacitor element is electrically connected to the other electrode of the first capacitor element. The other electrode of the second capacitor element is preferably electrically connected to one of a source and a drain of the third transistor.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect of the present invention relates to an object, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition of matter. Therefore, the present invention disclosed in this specification more specifically relates to the As one embodiment of the technical field of the present invention, there are provided a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, device, power storage device, storage device, imaging device, operation method thereof, or manufacturing method thereof One example can be mentioned.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one aspect of a semiconductor device. A display device, an imaging device, or an electronic device may include a semiconductor device. [Background technology]

[0004] The technology of constructing transistors using metal oxides formed on a substrate is attracting attention. For example, a transistor using zinc oxide or In-Ga-Zn oxide is used for a display device. Technologies used for pixel switching elements and the like are disclosed in Patent Documents 1 and 2. do.

[0005] In addition, a memory device using a transistor with extremely low off-state current as a memory cell has been patented. This is disclosed in reference 3. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A [Patent Document 3] JP 2011-119674 A Summary of the Invention [Problem to be solved by the invention]

[0007] Display devices are becoming increasingly high-resolution, with 8K4K (pixel count: 7680 x 4320) resolution or Hardware that can display at even higher resolutions is being developed. The introduction of HDR (High Dynamic Range) display technology, which improves image quality by adjusting the brightness, is also progressing. I am.

[0008] In order to display the image properly on a display device, it is necessary to match the image data to the resolution of the display device. For example, if the resolution of the display device is 8K4K and the image data is 4K2K (number of pixels: If the resolution is 3840 x 2160, the amount of data must be converted to 4 times the original size to display full screen. Conversely, if the resolution of the display device is 4K2K and the image data is for 8K4K, If so, the number of data items must be converted to 1 / 4.

[0009] Dedicated circuits are required to generate image data and convert the amount of data used for HDR processing, and this consumes a lot of power. At least the original image data is not converted and is displayed on the display device. It is preferable that the information can be input directly.

[0010] Therefore, one aspect of the present invention provides a display device capable of improving image quality. One of the objects of the present invention is to provide a display device that can appropriately display image data without converting the image data. One of the objectives is to provide a display device capable of HDR display. One of the objectives is to provide a display device capable of up-conversion. Another object of the present invention is to provide a display device capable of increasing the brightness of a displayed image. One of the objects of the present invention is to provide a display device capable of displaying two overlapping images. One of the aims is to provide

[0011] Another object is to provide a display device with low power consumption. One of the objects of the present invention is to provide a display device having a high optical performance. Another object of the present invention is to provide a novel display device. Another object of the present invention is to provide a method for driving the display device. Another object is to provide a novel semiconductor device or the like.

[0012] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. Other issues can be extracted from the drawings, claims, etc. [Means for solving the problem]

[0013] One embodiment of the present invention is a semiconductor device including a light-emitting element, a first transistor, a second transistor, and a third transistor. a transistor, a first capacitance element, a second capacitance element, a first wiring, and a second wiring; The display device has a first wiring, a second wiring, and a fourth wiring. The transistor is electrically connected to one of the source and drain of the light-emitting element. The electrode is electrically connected to one electrode of the first capacitor element and to the gate of the first transistor. is electrically connected to one of the source and drain of the second transistor and is connected to the first transistor. The gate of the transistor is electrically connected to one electrode of the second capacitance element. The other electrode of the first capacitor is electrically connected to the other electrode of the second capacitor. The first electrode is electrically connected to one of the source and drain of the third transistor. The gate of the third transistor is electrically connected to the first wiring, and the gate of the second transistor is The port is electrically connected to the second wiring, and the source or drain of the third transistor is The other is electrically connected to a third wiring and is a source or drain of the second transistor. The other one is preferably electrically connected to the fourth wiring.

[0014] The display device preferably further comprises a fourth transistor and a fifth wiring. One of the source and drain of the fourth transistor is connected to one electrode of the light emitting element. The other of the source and drain of the fourth transistor is electrically connected to the fifth wiring. The gate of the fourth transistor is electrically connected to the first wiring. is preferred.

[0015] In the above-mentioned display device, the other of the source and the drain of the first transistor is a high-voltage The other electrode of the light emitting element is electrically connected to the low potential power line. It is preferable that

[0016] One embodiment of the present invention is a semiconductor device including a light-emitting element, a first transistor, a second transistor, and a third transistor. a transistor, a first capacitance element, a second capacitance element, a first wiring, and a second wiring; The display device has a first wiring, a second wiring, and a fourth wiring. a first transistor connected to the source or drain of the second transistor; the other of the source and drain of the capacitor is electrically connected to one electrode of the first capacitance element, The gate of the first transistor is electrically connected to either the source or the drain of the second transistor. The gate of the first transistor is electrically connected to one electrode of the second capacitor. the other electrode of the second capacitance element is electrically connected to the other electrode of the first capacitance element. The other electrode of the second capacitor is connected to the source or drain of the third transistor. The gate of the third transistor is electrically connected to the first wiring. The gate of the second transistor is electrically connected to the second wiring, and the gate of the third transistor is electrically connected to the second wiring. The other of the source and drain of the second transistor is electrically connected to a third wiring. The other of the source or drain of the transistor is preferably electrically connected to a fourth wiring.

[0017] In the above-mentioned display device, the other electrode of the light-emitting element is electrically connected to a high-potential power line. The other of the source and the drain of the first transistor is electrically connected to a low potential power line. It is preferable that

[0018] In the display device described above, the first transistor further has a back gate, The gate is preferably electrically connected to the gate of the first transistor.

[0019] One embodiment of the present invention is a semiconductor device including a light-emitting element, a first transistor, a second transistor, and a third transistor. a first transistor, a fourth transistor, a first capacitance element, a second capacitance element, and a first A display device having the first wiring, the second wiring, the third wiring, the fourth wiring, and the fifth wiring. One electrode of the light emitting element is connected to one of the source and drain of the first transistor. The other of the source and drain of the first transistor is electrically connected to the second transistor. the source or drain of the first transistor, The other of the transistor and the drain is electrically connected to one electrode of the first capacitance element. The gate of the first transistor is electrically connected to either the source or the drain of the third transistor. The gate of the second transistor is electrically connected to one electrode of the second capacitor element. The other electrode of the second capacitance element is electrically connected to the other electrode of the first capacitance element. The other electrode of the second capacitor element is electrically connected to one of the source and drain of the fourth transistor. The gate of the fourth transistor is electrically connected to the first wiring, and the gate of the third transistor is electrically connected to the first wiring. The gate of the transistor is electrically connected to the second wiring, and the source of the fourth transistor is The other of the drains is electrically connected to a third wiring and is a source of the third transistor. The other of the drains is electrically connected to a fourth wiring and is connected to the gate of the first transistor. is preferably electrically connected to the fifth wiring.

[0020] In the above-mentioned display device, the other of the source and the drain of the second transistor is a high-voltage The other electrode of the light emitting element is electrically connected to the low potential power line. It is preferable that

[0021] In the display device described above, the second transistor further has a back gate, The gate is preferably electrically connected to the gate of the second transistor.

[0022] In the above-described display device, the light-emitting element is preferably an organic light-emitting diode.

[0023] In the above-mentioned display device, the first transistor, the second transistor and the third transistor Each of the transistors has a metal oxide in a channel forming region, the metal oxide being indium, Zinc and element M (aluminum, titanium, gallium, germanium, yttrium, zinc) one or more of ruthenium, lanthanum, cerium, tin, neodymium or hafnium It is preferable that

[0024] One embodiment of the present invention is an electronic device including the above-described display device and a camera. Effect of the Invention

[0025] By using one embodiment of the present invention, a display device capable of improving image quality can be provided. Alternatively, it is possible to provide a display device that can appropriately display image data without converting the image data. Alternatively, it is possible to provide a display device capable of performing HDR display. Alternatively, a display device capable of performing an up-conversion operation can be provided. It is possible to provide a display device capable of increasing the brightness of an image. It is possible to provide a display device capable of displaying the above images in an overlapping manner.

[0026] Alternatively, a display device with low power consumption can be provided. Alternatively, a novel display device or the like can be provided. A method for driving the display device can be provided. Alternatively, a novel semiconductor device, etc. can be provided. [Brief description of the drawings]

[0027] [Figure 1] FIG. 1 is a diagram illustrating a pixel circuit. [Diagram 2] FIG. 2 is a timing chart illustrating the operation of the pixel circuit. [Diagram 3] FIG. 3 is a diagram illustrating a pixel circuit. [Figure 4] FIG. 4 is a diagram illustrating a pixel circuit. [Diagram 5] 5A and 5B are diagrams illustrating a pixel circuit. [Figure 6] Fig. 6A is a diagram for explaining a circuit block, and Fig. 6B and Fig. 6C are diagrams for explaining a pixel configuration. [Figure 7] 7A, 7B and 7C are diagrams illustrating a display device. [Figure 8] 8A and 8B are diagrams illustrating a touch panel. [Figure 9] FIG. 9 is a diagram illustrating a display device. [Figure 10] FIG. 10 is a diagram illustrating a display device. [Figure 11] 11A1, 11A2, 11B1, 11B2, 11C1, and 11C2 are diagrams illustrating transistors. [Figure 12] 12A1, 12A2, 12B1, 12B2, 12C1, and 12C2 are diagrams illustrating transistors. [Figure 13] 13A1, 13A2, 13B1, 13B2, 13C1, and 13C2 are diagrams illustrating transistors. [Figure 14] 14A1, 14A2, 14B1, 14B2, 14C1, and 14C2 are diagrams illustrating transistors. [Figure 15] 15A, 15B, 15C, 15D, 15E, and 15F are diagrams for explaining electronic devices. [Figure 16] FIG. 16 is a diagram for explaining the simulation results. [Figure 17] FIG. 17 is a diagram for explaining the simulation results. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above, and various modifications and variations in form and detail are possible without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be modified as follows. The present invention is not limited to the description of the embodiment. In the configuration, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings. The same elements constituting the figures may be used in common and their explanations may be omitted. Hatching may be omitted or changed as appropriate between different drawings.

[0029] Even if a circuit diagram shows a single element, it is possible to use the same circuit without any functional problems. For example, a transistor that operates as a switch may be used. In some cases, multiple capacitors may be connected in series or parallel. In some cases, the sensor may be placed in multiple positions.

[0030] A single conductor may have multiple functions such as wiring, electrode, and terminal. In this specification, the same element may be referred to by multiple names. Even if elements are shown as being directly connected on the diagram, In some cases, the elements are connected via multiple conductors, and in this specification, such a configuration is referred to as However, it is included in the category of direct connection.

[0031] (Embodiment 1) In this embodiment, a display device which is one embodiment of the present invention will be described with reference to drawings. .

[0032] One embodiment of the present invention is a display device having a function of correcting image data in each pixel. The element is provided with a storage node, and the storage node is capable of holding first data. The first data is added to the second data by capacitive coupling and can be supplied to the display element. Alternatively, the first data can be capacitively coupled to the storage node after the second data is written to the storage node. It can also be added with

[0033] Therefore, the display device can display a corrected image. , up-conversion of the image, or partial or total display area The image of the body can be corrected and displayed in HDR. By using the same image data as the data, the brightness of the displayed image can be significantly improved. Alternatively, different image data may be used as the first data and the second data. You can display any image by overlaying it on the screen.

[0034] By using one aspect of the present invention, two types of image data, one for high resolution and one for low resolution, can be obtained. This allows the signal to be output appropriately without the need for a separate dedicated circuit for up-conversion or down-conversion. When displaying at high resolution, the first transistor of each pixel For low resolution displays, multiple The same data is sent to the plurality of pixels via a second transistor electrically connected to the pixel. Supply.

[0035] Here, high-resolution image data is, for example, 8K4K (pixel count: 7680 x 432 0). Also, low-resolution image data is For example, for data with an amount of information corresponding to 4K2K (pixel count: 3840 x 2160), In other words, the effective data volume of high resolution image data and low resolution image data (effective The ratio of the number of pixels (corresponding to the effective number of pixels) is assumed to be 4:1.

[0036] In addition, if the data amount (number of pixels) ratio is 4:1, it is not limited to the above example. The image data is 4K2K compatible, and the image data for low resolution is FullHD (pixel The data may be for a high resolution image (1920 x 1080). Data corresponding to 16K8K (pixel count: 15360 x 8640), low resolution The image data may be data corresponding to 8K4K.

[0037] In this specification, a pixel refers to, for example, one element whose brightness can be controlled. Therefore, for example, one pixel refers to one color element, and one of the color elements Therefore, the color display consists of the R (red), G (green), and B (blue) color elements. In the case of a device, the minimum unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel. In this case, each pixel of RGB is called a sub-pixel, and RG The B subpixel may also be referred to as a pixel.

[0038] <Configuration example 1> FIG. 1 shows a structure of a pixel 10 that can be used in a display device according to one embodiment of the present invention. 10 includes a transistor 101, a transistor 102, a transistor 103, and a transistor The pixel includes a resistor 104 , a capacitor 111 , a capacitor 112 , and a light-emitting element 114 .

[0039] One electrode of the light emitting element 114 is connected to one of the source and drain of the transistor 103. One electrode of the light-emitting element 114 is electrically connected to one electrode of the capacitor 112. The gate of the transistor 103 is electrically connected to the source of the transistor 102 or The gate of the transistor 103 is electrically connected to one of the drains of the capacitor 111. The other electrode of the capacitor 111 is electrically connected to one electrode of the capacitor 112. The other electrode of the capacitor 111 is electrically connected to the other electrode of the transistor 101. The light emitting element 114 is electrically connected to one of the source and drain of the light emitting element 114. The electrode is electrically connected to one of the source and drain of the transistor 104 .

[0040] The light emitting element 114 is a light emitting diode (LED). iode, Organic Light Emitt Quantum dot light emitting diode (QLED), a light emitting diode that uses quantum dots in the light emitting layer tum-dot Light Emitting Diode), semiconductor lasers, etc. , and self-luminous light-emitting elements. Also, shutter-type or optical interference-type MEMS (Micro Electro Mechanical Systems) elements and Closing capsule type, electrophoresis type, electrowetting type, or electronic powder type ( A display element using a method such as the one described above may also be used.

[0041] Here, one of the source and drain of the transistor 102 and one of the capacitor elements 111 The wiring to which the electrode and the gate of the transistor 103 are connected is referred to as a node ND1. One of the source and drain of the transistor 101, the other electrode of the capacitor 111, and The wiring to which the other electrode of the capacitor 112 is connected is the node ND2. One of the source or drain of the light-emitting element 1103, one electrode of the capacitor 112, and The wiring to which one electrode of the transistor 4 is connected is referred to as a node ND3.

[0042] The transistor 103 serves as a driving transistor for controlling the amount of current flowing to the light emitting element 114. The transistor 101 and the transistor 102 are selection transistors for selecting a pixel. The transistor 104 functions as a transistor that changes the potential of the node ND3 to the potential of the light-emitting element 114. If the voltage exceeds the threshold voltage, an unintended current may flow through the light emitting element 114. Specifically, the transistor 104 has a function of preventing a defect from occurring in the light-emitting element 11. In order to prevent current from flowing during periods other than the period during which current is passed through 4 (also called the light emission period), Functions as a switch.

[0043] The gate of the transistor 101 and the gate of the transistor 104 are electrically connected to the wiring 121. The gate of the transistor 102 is electrically connected to a wiring 122. The other of the source and drain of the transistor 101 is electrically connected to the wiring 131. The other of the source and the drain of the transistor 102 is electrically connected to a wiring 132 . The other of the source and the drain of the transistor 104 is electrically connected to the wiring 133. .

[0044] The other of the source and the drain of the transistor 103 is electrically connected to a wiring 128. The other electrode of the light emitting element 114 is electrically connected to a wiring 129. Each of the lines 129 functions as a wiring (power supply line) to which a power supply potential is applied. The line 128 can function as a high-potential power line. It can function as a power line.

[0045] The wiring 121 and the wiring 122 are connected to the transistor 101, the transistor 102, and the transistor The scanning line has a function of controlling the operation of the scanning laser 104. The scan signal is applied to a selection transistor (transistor 101) that functions as a switch in pixel 10. and transistor 102) to control the conductive or non-conductive state (on or off). The scanning signal applied to the scanning line is a signal for determining whether the transistor 104 is conductive or not. Or, it is a signal for controlling the non-conducting state (on or off). The data line functions as a data line that supplies data 1. The data signal transmitted by the data line is The signal is used to display an image. The wiring 131 is a data line that supplies the second data. The wiring 131 also functions as a specific potential (reference voltage The wiring 133 has a function of supplying a constant potential (V0). It has the function as follows.

[0046] Note that the pixel is supplied with “Vref” and the first data (e.g., correction data) during the same period. The Vref is supplied from the signal line, and the capacitive coupling operation is performed as described later. If the data is supplied, at least the signal line that supplies the first data and the “Vref” or second data A signal line for supplying data (eg, image data) is required.

[0047] The node ND1 is a storage node. When the transistor 102 is turned on, The data supplied to the transistor 10 can be written to the node ND1. By making node ND2 non-conductive, the data can be held in node ND1.

[0048] The node ND2 is a storage node. When the transistor 101 is turned on, The data supplied to the transistor 10 can be written to the node ND2. By making 1 non-conductive, the data can be held in the node ND2.

[0049] The node ND3 is a storage node. When the transistor 104 is turned on, the wiring 13 The data supplied to the transistor 10 can be written to the node ND3. By making node ND4 non-conductive, the data can be held in node ND3.

[0050] Transistor 101, transistor 102, transistor 103, and transistor 10 It is preferable to use a transistor having an extremely low off-state current for at least one of the above-mentioned elements. The transistors 101, 102, and 104 have extremely low off-state currents. By using low-power transistors, leakage current can be suppressed. 1. It is possible to hold the potentials of the nodes ND2 and ND3 for a long period of time. For example, a transistor using a metal oxide in the channel formation region (hereinafter, O S transistor) can be preferably used.

[0051] In addition, the transistors 101, 102, 103 and It is more preferable to use OS transistors for all of the transistors 104. 101, transistor 102, transistor 103 and transistor 104 In addition, an OS transistor may be used as the transistor as long as the leakage current is within an allowable range. In order to operate the device, a transistor having silicon in the channel formation region (hereinafter, Si transistor) is used. Alternatively, OS transistors and Si transistors may be used together. The Si transistor may be a transistor having amorphous silicon. , crystalline silicon (microcrystalline silicon, low-temperature polysilicon, single crystal silicon) The transistors shown in Figure 1 are all n-channel transistors. However, a p-channel transistor can also be used.

[0052] The semiconductor material used in the OS transistor has an energy gap of 2 eV or more. Alternatively, a metal oxide having a polarization of 2.5 eV or more, more preferably 3 eV or more, can be used. A typical example is an oxide semiconductor containing indium. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor) or CAC-OS (Cloud-Aligned Compo CA AC-OS has a stable crystal structure and is suitable for transistors where reliability is important. CAC-OS exhibits high mobility characteristics, making it suitable for use in transistors that operate at high speed. .

[0053] Since the energy gap of the semiconductor layer of the OS transistor is large, The off-state current per unit area is several yA / μm (y is 10 -24 ) extremely low off-state current characteristics. In addition, OS transistors can be used to reduce the effects of impact ionization, avalanche breakdown, and It has features different from Si transistors, such as no short channel effect, and is therefore reliable. In addition, it is possible to form highly crystalline circuits, which is a problem with silicon transistors. OS transistors are also less susceptible to variations in electrical characteristics due to non-uniformity.

[0054] The semiconductor layer of the OS transistor is made of, for example, indium, zinc, and element M (aluminum). nium, titanium, gallium, germanium, yttrium, zirconium, lanthanum, selenium It is represented by In-M-Zn oxides containing one or more of In, S, Tin, Neodymium, and Hafnium. The membrane may be as described above.

[0055] When the oxide semiconductor constituting the semiconductor layer is an In-M-Zn oxide, The atomic ratio of metal elements in the sputtering target used to form a film of the oxide is In≧ It is preferable that M and Zn satisfy the condition M. The atomic ratio of In:M:Zn is 1:1:1, In:M:Zn is 1:1:1.2, and I n:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4 .1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5 The atomic ratio of the semiconductor layers to be formed is preferably 1:1:8. The atomic ratio of metal elements contained in the target varies by ±40%. .

[0056] The semiconductor layer is made of an oxide semiconductor with a low carrier concentration. Carrier concentration is 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm 3 Further details are below. Preferably 1 x 10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 The following is further Preferably 1 x 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than 100 years of experience Such an oxide semiconductor can be a high-purity intrinsic or The oxide semiconductor is called a substantially high-purity intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and It can be said that the oxide semiconductor has stable characteristics.

[0057] In addition, the semiconductor characteristics and electrical characteristics (electric field characteristics) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition depending on the characteristics of the device (e.g., effective mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier concentration, impurity concentration, and defect concentration of the semiconductor layer are It is preferable to appropriately set the recess density, the atomic ratio of metal elements to oxygen, the interatomic distance, the density, etc. It is nice.

[0058] In the oxide semiconductor that constitutes the semiconductor layer, silicon and carbon, which are group 14 elements, If oxygen is contained, oxygen vacancies increase and the semiconductor layer becomes n-type. The concentrations of com and carbon (obtained by secondary ion mass spectrometry) were 2 × 10 18 ato ms / cm 3 Less than or equal to 2×10 17 atoms / cm 3 The following applies.

[0059] Alkali metals and alkaline earth metals react with the components in oxide semiconductors to form catalytic compounds. In some cases, carriers may be generated, which may increase the off-state current of the transistor. Therefore, the concentration of alkali metals or alkaline earth metals in the semiconductor layer (secondary ion mass The concentration obtained by the analytical method is 1 x 10 18 atoms / cm 3 Below, preferably 2x 10 16 atoms / cm 3 To the following:

[0060] When the oxide semiconductor that constitutes the semiconductor layer contains nitrogen, the carrier The electrons that become electrons are generated, the carrier concentration increases, and it becomes easy to make it n-type. A transistor using an oxide semiconductor having such a structure tends to be normally on. The nitrogen concentration in the conductor layer (obtained by secondary ion mass spectrometry) is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0061] When hydrogen is contained in the oxide semiconductor constituting the semiconductor layer, It reacts with oxygen that bonds with metal atoms to form water, forming oxygen vacancies in the oxide semiconductor. When oxygen vacancies are present in the channel formation region of an oxide semiconductor, In addition, the defect where hydrogen enters the oxygen vacancy may cause the doped layer to become normally on. In some cases, hydrogen atoms function as donors and electrons, which are carriers, are generated. It may combine with oxygen, which is bonded to a metal atom, to generate electrons that act as carriers. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen has a normally-on characteristic. It is easy to become.

[0062] The defect where hydrogen has entered the oxygen vacancy can function as a donor in the oxide semiconductor. Therefore, it is difficult to quantitatively evaluate the defects in oxide semiconductors. In some cases, the carrier concentration is used for evaluation, not the donor concentration. As a parameter of the oxide semiconductor, we assume a state in which no electric field is applied, rather than the donor concentration. In other words, the "carrier concentration" described in this specification is This can sometimes be rephrased as "donor concentration."

[0063] Therefore, it is preferable to reduce hydrogen in the oxide semiconductor as much as possible. In oxide semiconductors, secondary ion mass spectrometry (SIMS) The hydrogen concentration obtained by mass spectrometry was calculated as 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 Less than, more preferred 5×10 18 atoms / cm 3less than 1×10 18 atoms / cm 3 The oxide semiconductor in which impurities such as hydrogen are sufficiently reduced is used as the By using it in a channel formation region, stable electrical characteristics can be imparted.

[0064] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As non-single crystal oxide semiconductors, for example, CAAC-OS, polycrystalline Oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor) conductor, pseudo-amorphous oxide semiconductor (a-like OS) s-like oxide semiconductor), and amorphous oxide semiconductor Among non-single crystal structures, the amorphous structure has the highest defect level density, and CAAC- The OS has the lowest defect state density.

[0065] An oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and does not contain a crystalline component. Alternatively, the oxide film having an amorphous structure is, for example, a completely amorphous structure without any crystalline portion. do not have.

[0066] In addition, the semiconductor layer may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA The film may be a mixed film having two or more of the C-OS region and the single crystal structure region. The composite film may be, for example, a single-layer structure including two or more of the above-mentioned regions, or a laminate structure. It may have a layered structure.

[0067] The structure of a CAC-OS, which is one form of a non-single crystal semiconductor layer, will be described below.

[0068] CAC-OS is, for example, an oxide semiconductor in which the elements constituting the oxide semiconductor are 0.5 nm to 10 nm thick. A material having a size of 1 nm or more and 2 nm or less, or a size close to that range, is unevenly distributed. In the following, one or more metal elements are included in the oxide semiconductor. The region having the metal element is unevenly distributed and has a size of 0.5 nm to 10 nm, preferably 1 nm A mixture of particles with sizes between 1 m and 2 nm or close to that size is called a mosaic or patch. It is also called a state.

[0069] Note that the oxide semiconductor preferably contains at least indium. In addition to these, aluminum, gallium, iridium, and zinc are preferably included. tritium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, Germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium , tantalum, tungsten, magnesium, etc. It may be included.

[0070] For example, CAC-OS in In-Ga-Zn oxide (In- The Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0.) or Indium Zinc Oxide (hereinafter, In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0. ) and gallium oxide (GaO X3 (X3 is a real number greater than 0) ), or gallium zinc oxide (Ga X4 Zinc Y4 OZ4 (X4, Y4, and Z1 and Z2 are real numbers greater than 0.) The material is separated into a mosaic pattern. The mosaic-like InO X1 , or In X2 Zinc Y2 O Z2 is uniformly distributed in the film. This is a configuration (hereinafter also referred to as a cloud-like configuration).

[0071] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region in which In this specification, for example, the number of In atoms relative to the element M in the first region is The first region has a ratio of In to the element M that is greater than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that of the second region.

[0072] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compound include those represented by the following formula:

[0073] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned on the ab plane. In the case of ZnO, the crystal structure is non-oriented and connected.

[0074] On the other hand, CAC-OS refers to the material composition of an oxide semiconductor. In a material composition containing Ga, Zn, and O, some of the nanoparticles are mainly composed of Ga. The region where In is observed as a nanoparticle and the region where In is observed as a nanoparticle are mainly composed of In are shown in Fig. Therefore, in CAC-OS, , crystal structure is a secondary factor.

[0075] Note that CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, Not at all.

[0076] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 In some cases, it may be difficult to observe a clear boundary between the region in which the main component is the

[0077] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium are used. Aluminum, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more selected species from the group consisting of uranium, uranium, etc. are included, CAC-OS will In one area, the metal element is observed as a nanoparticle, and in another area, In is observed as a nanoparticle. The nanoparticle-like regions are randomly distributed in a mosaic pattern. This refers to.

[0078] CAC-OS can be formed, for example, by a sputtering method without heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the following deposition gas is used: Any one selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. In addition, the ratio of oxygen gas to the total flow rate of the deposition gas during deposition may be The lower the flow rate ratio, the more preferable. For example, the flow rate ratio of oxygen gas is set to 0% or more and less than 30%, preferably It is preferable to set the range to 0% or more and 10% or less.

[0079] CAC-OS is a method of measuring X-ray diffraction (XRD). When measured using the out-of-plane θ / 2θ scan, In other words, no clear peaks are observed in the X-ray diffraction measurement. It can be seen that no orientation in the ab plane direction or the c-axis direction of the fixed region is observed.

[0080] CAC-OS irradiates electron beams with a probe diameter of 1 nm (also called nanobeam electron beams). In the electron diffraction pattern obtained by this method, a ring-shaped area with high brightness (ring region In the ring region, multiple bright spots are observed. The crystal structure of CAC-OS has no orientation in the planar direction and the cross-sectional direction. It can be seen that it has a c (nanocrystal) structure.

[0081] For example, in the case of CAC-OS of In-Ga-Zn oxide, Optical method (EDX:Energy Dispersive X-ray Spectrosc) The EDX mapping obtained using a GaO X3 A region in which is the main component, In X2 Zinc Y2 O Z2 , or InOX1 The areas where the main component is It can be confirmed that the compound has the structure described above.

[0082] CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. It has different properties from GZO compounds. That is, CAC-OS is GaO X3 The main components are and the region where In X2 Zinc Y2 O Z2 , or InO X1 The region where is the main component and the region where is The phase is gradually separated, and the regions each consisting of one element as a main component are arranged in a mosaic pattern.

[0083] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X This is a region with high conductivity compared to the region where In 3 is the main component. X2 Zinc Y2 O Z2 , or InO X1 The carriers flow through the area where the main component is oxygen. Therefore, the In X2 Zinc Y2 O Z2 , or I nO X1 The regions where the main component is ZnO are distributed in a cloud-like shape in the oxide semiconductor, resulting in a high electric field. Field effect mobility (μ) can be realized.

[0084] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 O Z2 , or InO X1 This region has higher insulating properties than the region where GaO is the main component.X3 etc. By distributing the region in which the main component is Switching operation can be achieved.

[0085] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation due to Sex and In X2 Zinc Y2 O Z2 , or InO X1 The conductivity caused by the This allows for a high on-state current (I on ), and high field-effect mobility (μ It is possible.

[0086] Semiconductor devices using CAC-OS have high reliability. It is suitable as a constituent material for various semiconductor devices.

[0087] Using the timing chart shown in FIG. 2, the pixel 10 that adds correction data to image data In the following description, a high potential is referred to as "High" and a low potential is referred to as "Low". In addition, correction data is represented as "Vw", image data is represented as "Vdata", and specific The potential of the reference voltage is called “Vref”. “Vref” can be, for example, 0V, GND potential or a specific The reference potential can be used. Note that "Vw" is an arbitrary first data, "Vdata " can also be said to be any second data.

[0088] First, the operation of writing the correction data "Vw" to the node ND1 will be described. Details of distribution, coupling or loss of electric potential due to circuit configuration, operation timing, etc. The above does not take into account any changes in the

[0089] At time T1, the potential of the wiring 121 is set to "High", the potential of the wiring 122 is set to "High", If the potential of the wiring 131 is "Vref" and the potential of the wiring 132 is "Vw", then the transistor 10 1, the transistor 102 and the transistor 104 are turned on, and the node ND1 is connected to the A potential “Vw”, a potential “Vref” of the wiring 131 at the node ND2, a potential “Vref” of the wiring 13 at the node ND3 The potential "V0" of the third pixel is written. "V0" is a potential at which no current flows through the light emitting element 114. In other words, it is preferable to set the potential to be equal to or lower than the threshold voltage of the light emitting element 114 .

[0090] In this case, if the potential difference across both ends of the capacitance element 111 is V1, the potential difference V1 is expressed by the formula (1 ) can be shown as

[0091] V1 = Vw - Vref (1)

[0092] Similarly, if the potential difference across the capacitance element 112 is V2, the potential difference V2 is expressed by the following equation (2): This can be shown as:

[0093] V2=Vref-V0 (2)

[0094] This is the write operation of the correction data "Vw". If you do not want to perform correction, In the above operation, the same potential as "Vref" should be supplied as the correction data "Vw". .

[0095] Next, the correction operation of the image data "Vdata" will be described.

[0096] At time T2, the potential of the wiring 121 is set to “High”, the potential of the wiring 122 is set to “Low”, When the potential of the node ND1 is set to "Vdata", the transistor 102 is turned off and the node ND1 In addition, the potential of the node ND2 changes from “Vref” to “Vdata " changes to

[0097] At this time, if the potential of the node ND1 is Vx, the potential difference across the capacitive element 111 is Since the value shown in equation (1) is maintained, Vx can be expressed by equation (3).

[0098] Vx = Vw - Vref + Vdata (3)

[0099] Here, if Vref is set to 0V, equation (4) is obtained.

[0100] Vx = Vw + Vdata (4)

[0101] As shown in equation (4), the potential Vx of the node ND1 is calculated by adding the correction data “Vw” to the image data “Vw”. In other words, the signal stored in the memory circuit and By adding signals written later, images can be overlaid.

[0102] Up to this point, the correction operation of the image data "Vdata" has been explained.

[0103] Next, the display operation will be described.

[0104] At time T3, if the potential of the wiring 121 is set to “Low” and the potential of the wiring 122 is set to “Low”, then: The transistors 101 and 104 are turned off, and the gate of the transistor 103 The gate-source voltage Vgs is the voltage held by the capacitance elements 111 and 112, A current according to Vgs flows through the light emitting element 114. At this time, the potential of the node ND1 is “Vw +Vdata+a”, the potential of node ND2 is “Vdata+a”, the potential of node ND3 is It is "V0+a", where a is a constant and is connected to the transistor 103 of the light emitting element 114. Until the potential of the electrode connected to the The amount of fluctuation is shown.

[0105] The operation of FIG. 2 can be performed continuously within one horizontal period.

[0106] By combining such image data and correction data, DR display, correction of display irregularities inherent to display devices, threshold voltage of transistors in pixels Or, a combination of these can be performed.

[0107] In the up-conversion operation, for example, the same image is displayed on all four adjacent pixels (2 rows and 2 columns). The supplied image data includes different image data for each pixel. For example, the number of pixels for 8K4K is Data applied to a specific pixel of 4K2K data is applied to specific four pixels of a display device having the By inputting different correction data to each of the four pixels, the resolution is improved. It is possible to display.

[0108] The display device according to one embodiment of the present invention is a display device that displays different images, although image data is corrected in a broad sense. For example, the first image, which is composed of image data "Vdata", It is possible to display a composite image by superimposing a second image composed of the correction data “Vw” on the first image. In such a combination of image data and correction data, a composite image of different images can be obtained. In addition to displaying the image, it is possible to improve the brightness of the entire displayed image. For example, it is possible to insert text or This can be applied to Augmented Reality (Augmented Reality) displays, etc.

[0109] The display device according to one embodiment of the present invention can be used to drive a display element by applying a high voltage to the display element even when a general-purpose driver IC is used. For example, it can be supplied from a driver IC to drive a light emitting element. This reduces the voltage required by approximately half, making it possible to reduce the power consumption of the display device. In addition, for example, by writing the same image data twice, the current flowing through the light-emitting element can be increased. This allows for increased brightness of the display.

[0110] <Configuration example 2> A configuration different from that of the pixel 10 shown in FIG. 1 is shown in FIG. 3. As shown in FIG. 101, transistor 102, transistor 103 and transistor 104, In particular, the driving transistor of the light emitting element 114 may have a back gate. The transistor 103 acting as a back gate is preferably provided. This shows a configuration in which the back gate is electrically connected to the gate (sometimes called the front gate). In addition, the transistor has a back gate, which has the effect of increasing the on-state current. This can improve the saturation characteristics of the transistor. The threshold voltage of the transistor is controlled by electrically connecting the transistor to a wiring (not shown) that can supply the In FIG. 3, all the transistors are back-gate-controlled. Although the figure shows a configuration in which a back gate is provided, the present invention is not limited to the above configuration. It's fine.

[0111] <Configuration example 3> A configuration different from that of the pixel 10 shown in FIG. 1 is shown in FIG. 3, and the other of the source and drain of the transistor 104 is not connected to the transistor 1 The point electrically connected to one of the source and drain of the transistor 103, The pixel 10 differs from the pixel 10 shown in FIG. 1 in that the pixel 10 is electrically connected to the wiring 134. can function as a signal line that controls the conduction of the transistor 104.

[0112] One electrode of the light emitting element 114 is connected to one of the source and drain of the transistor 104. The other of the source and drain of the transistor 104 is electrically connected to the The source or drain of the transistor 104 is electrically connected to the source or drain of the transistor 103. The other of the source and drain is electrically connected to one electrode of the capacitor 112. The gate of the transistor 103 is electrically connected to either the source or the drain of the transistor 102. The gate of the transistor 103 is electrically connected to one electrode of the capacitor 111. The other electrode of the capacitor 111 is electrically connected to the other electrode of the capacitor 112. The other electrode of the capacitor 111 is connected to the source or drain of the transistor 101. It is electrically connected to one side.

[0113] A gate of the transistor 101 is electrically connected to a wiring 121. The gate of the transistor 101 is electrically connected to the wiring 122. The other drain is electrically connected to the wiring 131. The other drain is electrically connected to the wiring 132. It is electrically connected to the wiring 134 .

[0114] The other of the source and the drain of the transistor 103 is electrically connected to a wiring 128. The other electrode of the light emitting element 114 is electrically connected to a wiring 129. The line 129 has a function of supplying power. For example, the wiring 128 functions as a high-potential power line. The wiring 129 can function as a low-potential power supply line. do.

[0115] In the configuration shown in FIG. 4, when the transistor 104 is conductive, a current flows through the light emitting element 114. Therefore, after adding the correction data "Vw" and image data "Vdata", Therefore, the light emitting element 114 can start emitting light at any timing.

[0116] <Configuration Example 4> A configuration different from that of pixel 10 shown in FIG. 1 is shown in FIG. 5A and FIG. 5B.

[0117] The pixel 10 shown in FIG. 5A differs from the pixel 10 shown in FIG. 1 in that it does not include the transistor 104 and the wiring 133. As described above, the transistor 104 is different from the pixel 10 shown in FIG. When the voltage exceeds the threshold voltage of the light emitting element, an unintended current flows through the light emitting element 114. However, the signal written to node ND3 If the threshold voltage of the light emitting element 114 is limited to a value lower than the threshold voltage of the light emitting element 114, the transistor 104 is omitted. By reducing the number of transistors per pixel as in the configuration shown in FIG. This allows the area occupied by the pixel to be reduced, realizing a high-definition display device. This makes it possible to realize a high-brightness display device.

[0118] In the pixel 10 shown in FIG. 5B, one electrode of the light-emitting element 114 is connected to the source of the transistor 103. Alternatively, the point where the other electrode of the light emitting element 114 is electrically connected to one of the drains is connected to the wiring 12. 5A in that it is electrically connected to pixel 10.

[0119] One electrode of the light emitting element 114 is connected to one of the source and drain of the transistor 103. The other of the source and the drain of the transistor 103 is electrically connected to the capacitor 1 The gate of the transistor 103 is electrically connected to one electrode of the transistor 12. The gate of the transistor 103 is electrically connected to one of the source and drain of the transistor 102. The gate is electrically connected to one electrode of the capacitor 111. The other electrode of the capacitor 111 The other electrode of the capacitor 111 is electrically connected to the other electrode of the capacitor 112. , is electrically connected to one of the source and drain of the transistor 101 .

[0120] A gate of the transistor 101 is electrically connected to a wiring 121. The gate of the transistor 101 is electrically connected to the wiring 122. The other drain is electrically connected to the wiring 131. The other of the source and the drain is electrically connected to a wiring 132 .

[0121] The other electrode of the light-emitting element 114 is electrically connected to the wiring 128. The other of the source and drain of the transistor 3 is electrically connected to a wiring 129. The line 129 has a function of supplying power. For example, the wiring 128 functions as a high-potential power line. The wiring 129 can function as a low-potential power supply line. do.

[0122] In the pixel 10 shown in FIG. 5B, the node ND3 is connected to a wiring 129 that supplies a fixed potential. Therefore, the correction data "Vw" and the image data "Vdata" must be added together stably. can be done.

[0123] A block diagram of a display device 100 to which the above-described pixel 10 configuration is applied is shown in FIG. The device 100 includes a display unit 150, a gate driver 130, and a source driver 140. The display unit 150 has a plurality of pixels, namely, pixel 10(1, 1) to pixel 10(m, n). The pixels can be arranged in a matrix. m and n are each 1 or more. An integer.

[0124] Each of the pixels 10 is connected to a gate driver 130 via a plurality of wirings (such as wiring 121). A signal is given through the pixel 10 to control the driving. A signal is given from the driver 140 via a plurality of wirings (such as the wiring 131) to control the driving. will be done.

[0125] In the case of color display, the pixel 10 is a pixel having R (red), G (green), and B (blue) pixels as shown in FIG. The sub-pixels correspond to the three primary color sub-pixels 10Re, 10Gr, and 10Bl. The number of sub-pixel colors and the color combination are as follows: As shown in FIG. 6C, the number of sub-pixels is not limited to three, RGB. 0Re, sub-pixel 10Gr, sub-pixel 10Bl, and sub-pixel 10Wh are combined to form one image. It is also effective to configure a pixel array by combining four sub-pixels of R, G, B, and Y (yellow). By combining these, one pixel can be formed.

[0126] This embodiment may be implemented in appropriate combination with the configurations described in other embodiments. is possible.

[0127] (Embodiment 2) In this embodiment, a configuration example of a display device using a light-emitting device will be described. In this embodiment, the elements, operations and functions of the display device described in the first embodiment will be described. The details are omitted.

[0128] The display device described in this embodiment mode can include the pixel described in Embodiment Mode 1. The scanning line driving circuit described below is a gate driver, and the signal line driving circuit is a source driver. Equivalent to a driver.

[0129] 7A to 7C are diagrams illustrating the structure of a display device in which one embodiment of the present invention can be used. be.

[0130] In FIG. 7A, a display unit 215 is provided on a first substrate 4001. A sealant 4005 is provided, and the display portion 215 is disposed between the sealant 4005 and the second substrate 400. It is sealed by 6.

[0131] In FIG. 7A, the scanning line driving circuit 221a, the signal line driving circuit 231a, and the signal line driving circuit 23 2a and the common line driving circuit 241a are provided on a printed circuit board 4041. The integrated circuits 4042 are made of a single crystal semiconductor or a polycrystalline semiconductor. The common line driver circuit 241a is formed of a wiring such as the wiring 129 shown in the first embodiment. It has the function of supplying a specified potential to the

[0132] The scanning line driving circuit 221a, the common line driving circuit 241a, the signal line driving circuit 231a, and Various signals and potentials are applied to the signal line driver circuit 232a via a flexible printed circuit (FPC). The signals are supplied via a Digital Printed Circuit (DPC) 4018.

[0133] The integrated circuit 4042 included in the scanning line driver circuit 221a and the common line driver circuit 241a is The signal line driver circuit 231a and the signal line The integrated circuit 4042 of the driver circuit 232a has a function of supplying image data to the display unit 215. The integrated circuit 4042 is surrounded by a sealant 4005 on a first substrate 4001. It is implemented in a different area than the area in which it is written.

[0134] The method of connecting the integrated circuit 4042 is not particularly limited, and may be wire bonding. The coating method, COF method, COG method, TCP method, etc. can be used.

[0135] FIG. 7B shows an integrated circuit included in the signal line driving circuit 231a and the signal line driving circuit 232a. This shows an example of mounting 4042 by the COG method. Also, part or the whole of the driving circuit is It is possible to form a system-on-panel by forming the display unit 215 on the same substrate. .

[0136] In FIG. 7B, the scanning line driving circuit 221a and the common line driving circuit 241a are In this example, the driving circuit is formed on the same substrate as the pixel circuit in the display unit 215. By forming the die, the number of parts can be reduced, and the productivity can be improved. do.

[0137] In FIG. 7B, a display unit 215 and a scanning line driving circuit 22 are provided on a first substrate 4001. A sealant 4005 is provided so as to surround the common line driver circuit 241a and the common line driver circuit 241b. In addition, the display unit 215, the scanning line driving circuit 221a, and the common line driving circuit 241a A second substrate 4006 is provided on the display portion 215 and the scanning line driver circuit 22. 1a and the common line driver circuit 241a are made of a first substrate 4001, a sealant 4005, and a second The display device is sealed together with the substrate 4006 .

[0138] In FIG. 7B, a signal line driving circuit 231a and a signal line driving circuit 232a are formed separately. In the illustrated example, the scanning line driver is mounted on a single substrate 4001, but the present invention is not limited to this configuration. Alternatively, a driving circuit may be formed separately and mounted, or a part of a signal line driving circuit or a scanning line driving circuit may be mounted. Alternatively, a part of the signal line driver circuit 231 may be formed separately and mounted. The signal line driver circuit 232a and the signal line driver circuit 232b may be formed on the same substrate as the display portion 215.

[0139] The display device includes a panel in which a display device is sealed, and a controller for the panel. The term "IC" may also refer to a module in which an IC or the like including the above is mounted.

[0140] The display portion and the scanning line driver circuit provided on the first substrate have a plurality of transistors. The transistor may be the Si transistor or the OS transistor described in Embodiment 1. A transistor can be applied.

[0141] Structure of a transistor included in a peripheral driver circuit and a transistor included in a pixel circuit of a display unit The transistors in the peripheral driver circuit may be the same or different. The transistors may have the same structure, or may have two or more types of transistor structures. Similarly, all the transistors in the pixel circuit may have the same structure. Alternatively, the semiconductor device may have transistors with two or more different structures.

[0142] An input device 4200 may be provided on the second substrate 4006. The display device shown in FIG. 10 is provided with an input device 4200, which can function as a touch panel. can.

[0143] There is no limitation on the detection device (also called a sensor element) included in the touch panel of one embodiment of the present invention. There are various sensors that can detect the proximity or contact of a sensing object such as a finger or stylus. The sensor can be applied as a sensing device.

[0144] The sensor type may be, for example, a capacitance type, a resistive film type, a surface acoustic wave type, or an infrared type. Various methods can be used, such as a pressure-sensitive method, an optical method, or a pressure-sensitive method.

[0145] In this embodiment, a touch panel having a capacitance type detection device will be described as an example. Reveal.

[0146] The capacitive touch sensor includes a surface capacitive touch sensor and a projected capacitive touch sensor. As the capacitance type, there are self-capacitance type, mutual capacitance type, etc. When using the mutual capacitance type, This is preferable because it enables simultaneous multi-point detection.

[0147] The touch panel according to one embodiment of the present invention is formed by bonding a display device and a detection device that are separately manufactured. A detection device is provided on one or both of a substrate supporting a display device and an opposing substrate. Various configurations can be applied, such as a configuration in which electrodes or the like constituting a chair are provided.

[0148] 8A and 8B show an example of a touch panel. FIG. 8A shows a touch panel 4210. FIG. 8B is a perspective schematic diagram of the input device 4200. Note that for clarity, Only representative components are shown.

[0149] The touch panel 4210 is made by bonding a display device and a detection device that are separately manufactured. It is a composition.

[0150] The touch panel 4210 has an input device 4200 and a display device, which are stacked on top of each other. It is being done.

[0151] The input device 4200 includes a substrate 4263, an electrode 4227, an electrode 4228, and a plurality of wirings 423. 7, a plurality of wirings 4238 and a plurality of wirings 4239. For example, the electrode 4227 has wiring The electrode 4228 can be electrically connected to the line 4237 or the wiring 4239. The FPC 4272b can be electrically connected to the wiring 4239. 7 and each of the plurality of wirings 4238. 73b may be provided.

[0152] Alternatively, a touch sensor may be provided between the first substrate 4001 and the second substrate 4006 of the display device. A touch sensor may be provided between the first substrate 4001 and the second substrate 4006. In addition to capacitive touch sensors, optical touch sensors using photoelectric conversion elements are also used. may be applied.

[0153] 9 is a cross-sectional view of a portion indicated by a chain line N1-N2 in FIG. 7B. The device has an electrode 4015, and the electrode 4015 is anisotropically conductive with a terminal of the FPC 4018. 9, the electrode 4015 is electrically connected to the insulating layer 4019. The wiring 4 is formed in an opening in the edge layer 4112, the insulating layer 4111, and the insulating layer 4110. 014 and is electrically connected thereto.

[0154] The electrode 4015 is formed from the same conductive layer as the first electrode layer 4030. The source and drain electrodes of the transistor 4010 and the transistor 4011 They are formed from the same conductive layer.

[0155] The display unit 215 and the scanning line driver circuit 221a provided on the first substrate 4001 are In FIG. 9, the display unit 215 includes a transistor 4010 and and a transistor 4011 included in the scan line driver circuit 221a. In FIG. 9, a bottom-gate transistor is used as a transistor 4010 and a transistor 4011. However, a top-gate type transistor may be used.

[0156] In FIG. 9, an insulating layer 4112 is provided on a transistor 4010 and a transistor 4011. In addition, a partition wall 4510 is formed over the insulating layer 4112.

[0157] The transistor 4010 and the transistor 4011 are provided over an insulating layer 4102. The transistor 4010 and the transistor 4011 are formed on an insulating layer 4111. The electrode 4017 functions as a back gate electrode. can be done.

[0158] The display device shown in FIG. 9 includes a capacitor 4020. The capacitor 4020 is a transistor. An electrode 4021 formed in the same process as the gate electrode of the transistor 4010, and a source electrode and The drain electrode is formed in the same process as the insulating layer 410. Overlapped through 3.

[0159] In general, the capacitance of a capacitor provided in a pixel portion of a display device is determined by the capacitance of the transistor arranged in the pixel portion. It is set so that the charge can be held for a certain period of time, taking into consideration the leakage current of the transistor, etc. The capacitance of the capacitor may be set in consideration of the off-state current of the transistor, etc.

[0160] The transistor 4010 provided in the display portion 215 is electrically connected to a display device. FIG. 9 shows a light-emitting display device (hereafter referred to as an "EL display device") that uses a light-emitting device as a display device. The light-emitting device 4513, which is a display device, is an example of a display unit 215. The light-emitting device 4513 is electrically connected to the transistor 4010. The structure is a laminated structure of a first electrode layer 4030, a light emitting layer 4511, and a second electrode layer 4031. However, the present invention is not limited to this configuration. Accordingly, the configuration of the light emitting device 4513 can be changed as appropriate.

[0161] The display device shown in FIG. 9 includes an insulating layer 4111 and an insulating layer 4104. An insulating layer that is not easily permeated by impurity elements is used as the insulating layer 4104. By sandwiching the semiconductor layer of the transistor with the insulating layer 4104, it is possible to prevent impurities from entering from the outside. This can be done.

[0162] A light-emitting device can be used as a display device included in the display device. For example, an EL device that utilizes electroluminescence can be used as the device. An EL device is a layer containing a light-emitting compound between a pair of electrodes (also called an "EL layer"). A potential difference between the pair of electrodes that is greater than the threshold voltage of the EL device is applied. When this occurs, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The electrons and holes are recombined in the EL layer, and the luminescent compound contained in the EL layer emits light. do.

[0163] EL devices are classified according to whether the emitting material is organic or inorganic. Generally, the former is called an organic EL device and the latter is called an inorganic EL device. LEDs (including micro LEDs) that use compound semiconductors as light-emitting materials are also EL devices. It is one of the.

[0164] In an organic EL device, when a voltage is applied, electrons flow from one electrode and electrons flow from the other electrode. Then, the carriers (electrons and holes) are re-injected into the EL layer. By binding, the luminescent organic compound forms an excited state, and the excited state is converted to the ground state. When the organic compound returns to its original state, it emits light. Such devices are called current-excited light-emitting devices.

[0165] In addition to the light-emitting compound, the EL layer may also contain a material with high hole injection properties and a material with high hole transport properties. materials, hole blocking materials, materials with high electron transport properties, materials with high electron injection properties, or bipolar The insulating layer 11 may include a photosensitive substance (a substance having high electron-transporting and hole-transporting properties).

[0166] The EL layer can be produced by deposition (including vacuum deposition), transfer, printing, inkjet, or coating methods. It can be formed by the following method.

[0167] Inorganic EL devices are classified into dispersed inorganic EL devices and thin-film inorganic EL devices depending on the element structure. Dispersion-type inorganic EL devices are classified into two types: dispersed-type and non-dispersion-type. Dispersion-type inorganic EL devices are devices in which particles of light-emitting material are dispersed in a binder. The light-emitting mechanism is the donor level and the acceptor level. The thin-film inorganic EL device uses the donor-acceptor recombination type light emission. The structure is that the material is sandwiched between dielectric layers, which are then sandwiched between electrodes. The light emission mechanism is a metal i This is a localized emission that utilizes the inner shell electron transition of the on. An organic EL device will be used for explanation.

[0168] In a light-emitting device, at least one of a pair of electrodes needs to be transparent in order to extract light. Then, a transistor and a light-emitting device are formed on the substrate, and the transistor and the light-emitting device are formed on the opposite side of the substrate. There are top emission structures that emit light from the top surface, and structures that emit light from the substrate side. bottom emission structure, which emits light from the bottom, and dual emission structure, which emits light from both sides. There are light-emitting devices with a light-emitting structure, and any light-emitting device with an emission structure can be applied. can be done.

[0169] The partition wall 4510 is formed using an organic insulating material or an inorganic insulating material. An opening is formed on the first electrode layer 4030 using a resin material, and the side of the opening is continuous. It is preferable to form the inclined surface so as to have a certain curvature.

[0170] The light-emitting layer 4511 may be composed of a single layer or a plurality of layers may be laminated. It doesn't matter whether it's

[0171] The color of light emitted by the light-emitting device 4513 can be white, red, or blue depending on the material that constitutes the light-emitting layer 4511. It can be green, blue, cyan, magenta, or yellow, for example.

[0172] As a method for realizing color display, a white light-emitting device (4513) is combined with a colored layer. There are two methods: one is to combine the two, and the other is to provide a light-emitting device 4513 with a different light-emitting color for each pixel. The former method is more productive than the latter method. On the other hand, the latter method requires a light-emitting layer for each pixel. Since it is necessary to make 4511 separately, this method is less productive than the former method. The method can obtain a luminescence color with higher color purity than the former method. By providing a microcavity structure to the light-emitting device 4513, the color purity can be further improved. can be increased to.

[0173] The light-emitting layer 4511 may contain an inorganic compound such as quantum dots. For example, The quantum dots can also function as a light-emitting material by being used in the light-emitting layer.

[0174] In order to prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light-emitting device 4513, A protective layer may be formed over the electrode layer 4031 and the partition wall 4510. Silicon, silicon oxide nitride, aluminum oxide, aluminum nitride, aluminum oxynitride Aluminum, aluminum oxide nitride, DLC (Diamond Like Carbon), etc. Also, the first substrate 4001, the second substrate 4006, and the seal The space sealed by the material 4005 is sealed with a filler 4514. As shown in the figure, a protective film (lamination) with high airtightness and low outgassing is required to prevent exposure to the outside air. Packaging (enclosure) with a covering material (such as a sealing film or ultraviolet curing resin film) is preferred.

[0175] Filler 4514 can be inert gas such as nitrogen or argon, or ultraviolet curing resin or Thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic resins, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate) can be used. Also, filler 4514 may contain a desiccant.

[0176] The sealing material 4005 is made of glass materials such as glass frit and two-liquid mixed resin. Use resin materials such as room temperature curing resin, photocuring resin, and thermosetting resin. Furthermore, the sealant 4005 may contain a desiccant.

[0177] If necessary, a polarizer or a circular polarizer (including an elliptical polarizer) on the exit surface of the light-emitting device. Optical films such as retardation plates (λ / 4 plates, λ / 2 plates), color filters, etc. may be installed as appropriate. In addition, the polarizing plate or the circular polarizing plate may be provided with an anti-reflection film. Anti-glare treatment can be applied to further diffuse reflected light and reduce glare.

[0178] By making the light-emitting device into a microcavity structure, light with high color purity can be extracted. In addition, by combining a microcavity structure with a color filter, This reduces congestion and improves visibility of the displayed image.

[0179] A first electrode layer and a second electrode layer (a pixel electrode layer, a common electrode layer) that apply a voltage to the display device In the case of a layer (also called an electrode layer, counter electrode layer, etc.), the direction of the light to be extracted and The light transmitting property or the light reflecting property can be selected depending on the location and the pattern structure of the electrode layer.

[0180] The first electrode layer 4030 and the second electrode layer 4031 are made of indium tungsten oxide. Oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide oxide, indium tin oxide, indium tin oxide with titanium oxide, indium zinc oxide A conductive material with light-transmitting properties, such as indium tin oxide doped with silicon oxide, is used. It is possible.

[0181] The first electrode layer 4030 and the second electrode layer 4031 are made of tungsten (W), molybdenum (M o), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb) , Tantalum (Ta), Chromium (Cr), Cobalt (Co), Nickel (Ni), Titanium ( Metals such as Ti, platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag), The metal layer may be formed by using one or more of the metals, their alloys, and their metal nitrides.

[0182] The first electrode layer 4030 and the second electrode layer 4031 are made of a conductive polymer (conductive polymer The conductive polymer may be a conductive composition containing a conductive polymer. A so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, Or a copolymer consisting of two or more of aniline, pyrrole and thiophene or a derivative thereof. Conductors, etc.

[0183] Since transistors are easily damaged by static electricity, a protection circuit is provided to protect the drive circuit. It is preferable that the protection circuit is constructed using a non-linear element.

[0184] A spacer (not shown) is provided between the first electrode layer 4030 and the second electrode layer 4031. The spacer is a space between the first electrode layer 4030 and the second electrode layer 4031 (cell gap). The shape of the spacer is not particularly limited. For example, the spacer may be For example, columnar spacers, spherical spacers, etc. can be used.

[0185] If necessary, black matrix (light-shielding layer), colored layer (color filter), polarizing member Optical members (optical substrates) such as phase difference members and anti-reflection members may be provided as appropriate. For example, circular polarization produced by a polarizing substrate and a retardation substrate may be used.

[0186] As shown in FIG. 10, the transistors and capacitors have regions where they overlap in the height direction. For example, the transistor 4011 forming the driver circuit may have a stack structure. If the transistor 4022 is arranged so as to overlap, a display device with a narrow frame can be obtained. In addition, a transistor 4010, a transistor 4023, a capacitor If the 4020 and 4020 are arranged so that they overlap, the aperture ratio and resolution can be improved. It is possible.

[0187] In the pixel circuit, a transparent conductive film having high transparency to visible light is used for electrodes and wiring. This makes it possible to increase the light transmittance within the pixel, and thus to substantially improve the aperture ratio. In the case of using an OS transistor, the semiconductor layer also has a light-transmitting property, so an opening is also provided. This is possible when transistors are not stacked. It is also valid.

[0188] This embodiment may be implemented in appropriate combination with the configurations described in other embodiments. is possible.

[0189] (Embodiment 3) In this embodiment mode, the transistors described in the above embodiment modes can be replaced with An example of a transistor that can be implemented will be described with reference to the drawings.

[0190] The display device of one embodiment of the present invention includes a bottom-gate transistor or a top-gate transistor. The present invention can be implemented using various types of transistors, such as transistors having different shapes, such as transistors having different shapes. The semiconductor layer material and transistor structure can be easily replaced to suit the production line. It is possible.

[0191] <Bottom-gate transistor> FIG. 11A1 shows a channel protection transistor, which is a type of bottom gate transistor. 11A1 is a cross-sectional view of the transistor 810 in the channel length direction. The transistor 810 is formed on a substrate 771. An electrode 746 is provided through an insulating layer 726. The electrode 746 can function as a gate electrode. The insulating layer 726 can function as a gate insulator. It can function as an edge layer.

[0192] An insulating layer 741 is provided over a channel formation region of the semiconductor layer 742. The electrode 744a and the electrode 744b are disposed on the insulating layer 726 and in contact with a portion of the insulating layer 726. Electrode 744a can function as either a source or drain electrode. A part of the electrode 744a and the electrode 744b can function as the other of the source electrode and the drain electrode. A portion of 44 b is formed on the insulating layer 741 .

[0193] The insulating layer 741 can function as a channel protection layer. 1, the thickness of the semiconductor layer 742 generated when the electrodes 744a and 744b are formed can be reduced. Therefore, when the electrodes 744a and 744b are formed, the semiconductor This can prevent the channel formation region of the layer 742 from being etched. According to this method, a transistor having good electrical characteristics can be realized.

[0194] The transistor 810 includes an insulating layer 741 on the electrodes 744a and 744b. 28 and has an insulating layer 729 on top of the insulating layer 728 .

[0195] When an oxide semiconductor is used for the semiconductor layer 742, at least one of the electrodes 744a and 744b At least in the portion in contact with the semiconductor layer 742, oxygen is taken from a portion of the semiconductor layer 742, and oxygen deficiency is formed. It is preferable to use a material capable of generating oxygen vacancies in the semiconductor layer 742. The carrier concentration in the region where this occurs increases, the region becomes n-type, and the n-type region (n + Area) Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, oxygen is taken from the semiconductor layer 742, and oxygen deficiency occurs. Examples of materials that can cause damage include tungsten and titanium. can.

[0196] The source and drain regions are formed in the semiconductor layer 742, forming an electrode 744. Therefore, the contact resistance between the electrode 744a and the semiconductor layer 742 can be reduced. To improve the electrical characteristics of transistors, such as field effect mobility and threshold voltage. can be done.

[0197] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 744 a and between the semiconductor layer 742 and the electrode 744b, It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. , can function as a source or drain region of a transistor.

[0198] The insulating layer 729 has a function of preventing or reducing the diffusion of impurities from the outside into the transistor. It is preferable to form the insulating layer 729 using a material having the above-mentioned properties. It can also be omitted.

[0199] The transistor 811 shown in FIG. 11A2 has a back gate electrode on an insulating layer 729. The transistor 810 differs from the transistor 810 in that it has an electrode 723 that can be used as a It can be formed from the same materials and by the same method as 46.

[0200] In general, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the gate electrode. The back gate electrode can be made to function in the same manner as the gate electrode. Alternatively, the potential may be a ground potential (GND potential) or an arbitrary potential. By changing the potential of the gate electrode independently of the potential of the gate electrode, the transistor can be The threshold voltage can be varied.

[0201] Both the electrode 746 and the electrode 723 can function as a gate electrode. Thus, the insulating layer 726, the insulating layer 728, and the insulating layer 729 each serve as a gate insulating layer. The electrode 723 can function as a dielectric layer. It is okay.

[0202] When one of the electrodes 746 and 723 is referred to as a "gate electrode," the other is referred to as a "transistor." For example, in the transistor 811, the electrode 723 is called a "gate electrode." When referring to the back gate electrode, the electrode 746 is referred to as the "back gate electrode." When the transistor 811 is used as a "top electrode," the transistor 811 is a top-gate type transistor. In addition, either the electrode 746 or the electrode 723 can be considered as a type of The first gate electrode is sometimes referred to as the "first gate electrode" and the other as the "second gate electrode."

[0203] By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, By setting the potentials of the electrodes 46 and 723 at the same potential, carriers flow in the semiconductor layer 742. The area becomes larger in the film thickness direction, so the amount of carrier movement increases. As the on-state current of the transistor 811 increases, the field-effect mobility increases.

[0204] Therefore, the transistor 811 is a transistor having a large on-current relative to its area. That is, the area occupied by the transistor 811 is According to one embodiment of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized. It is possible.

[0205] The gate electrode and back gate electrode are formed of a conductive layer, so that the The function of preventing the electric field generated by the channel from acting on the semiconductor layer in which the channel is formed (especially static electricity) The back gate electrode is formed larger than the semiconductor layer. In addition, by covering the semiconductor layer with a back gate electrode, the electric field shielding function can be improved.

[0206] By forming the back gate electrode from a conductive film having a light-shielding property, This can prevent light from entering the semiconductor layer. Degradation of electrical characteristics, such as a shift in the threshold voltage of a transistor, can be prevented.

[0207] According to one embodiment of the present invention, a highly reliable transistor can be provided. As a result, a highly reliable semiconductor device can be realized.

[0208] FIG. 11B1 shows a channel protection type transistor 820 having a different configuration from that shown in FIG. 11A1. 8 is a cross-sectional view in the channel length direction. Transistor 820 is substantially similar to transistor 810. The structure is different in that an insulating layer 741 covers the edge of a semiconductor layer 742. In addition, in an opening formed by selectively removing a part of the insulating layer 741 overlapping the semiconductor layer 742, The semiconductor layer 742 and the electrode 744a are electrically connected to each other. In another opening formed by selectively removing a part of the overlapping insulating layer 741, the semiconductor layer 7 The insulating layer 741 overlaps with the channel forming region. The region can function as a channel protection layer.

[0209] The transistor 821 shown in FIG. 11B2 has a back gate electrode on an insulating layer 729. The transistor 820 differs from the transistor 820 in that it has an electrode 723 that can be used.

[0210] By providing the insulating layer 741, the semiconductor generated during the formation of the electrodes 744a and 744b is prevented. Therefore, the formation of the electrodes 744a and 744b can be prevented. In some cases, thinning of the semiconductor layer 742 can be prevented.

[0211] The transistors 820 and 821 are the transistors 810 and The distance between electrodes 744a and 746 and the distance between electrodes 744b and 746 are smaller than those of the electrode 811. Therefore, the parasitic capacitance between the electrode 744a and the electrode 746 is reduced. In addition, the parasitic capacitance between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with favorable electrical characteristics can be provided. .

[0212] FIG. 11C1 shows a channel-etched transistor, which is one of the bottom-gate transistors. 8 is a cross-sectional view of the transistor 825 in the channel length direction. Electrodes 744a and 744b are formed without using 1. When forming the electrode 744b, a part of the semiconductor layer 742 that is exposed may be etched. On the other hand, since the insulating layer 741 is not provided, productivity of the transistor can be increased.

[0213] The transistor 826 shown in FIG. 11C2 has a back gate electrode formed on an insulating layer 729. The transistor 825 differs from the transistor 825 in that it has an electrode 723 that can be used.

[0214] 12A1 to 12C2 show transistors 810, 811, 820, 821, 825, 826 are cross-sectional views in the channel width direction.

[0215] In the structures shown in FIG. 12B2 and FIG. 12C2, the gate electrode and the back gate electrode are connected. As a result, the gate electrode and the back gate electrode have the same potential. It is sandwiched between the gate electrode and the back gate electrode.

[0216] The length of each of the gate electrode and the back gate electrode in the channel width direction is The length of the semiconductor layer 742 in the channel width direction is longer than the length of the semiconductor layer 742 in the channel width direction. Layers 726, 741, 728, and 729 are sandwiched between the gate electrode and the back gate electrode. This is the structure.

[0217] With this structure, the semiconductor layer 742 included in the transistor can be used as a gate electrode and It can be electrically surrounded by the electric field of the back gate electrode.

[0218] Like the transistor 821 or the transistor 826, the gate electrode and the back gate The electric field of the electrode electrically surrounds the semiconductor layer 742 in which the channel formation region is to be formed. The device structure of a transistor containing a surrounded channel (S-channel This can be called a nel structure.

[0219] By adopting an S-channel structure, one or both of the gate electrode and back gate electrode By both of these, an electric field for inducing a channel can be effectively applied to the semiconductor layer 742. This improves the current drive capability of the transistor and enables high on-current characteristics to be obtained. In addition, since the on-current can be increased, it is possible to miniaturize the transistor. In addition, the S-channel structure makes it possible to This can increase the target strength.

[0220] <Top-gate transistor> The transistor 842 illustrated in FIG. 13A1 is a top-gate transistor. The electrode 744a and the electrode 744b are formed on the insulating layer 728 and the insulating layer 729. The semiconductor layer 742 is electrically connected in the opening.

[0221] The part of the insulating layer 726 that does not overlap the electrode 746 is removed, and the electrode 746 and the remaining insulating layer 72 6 as a mask to introduce impurities into the semiconductor layer 742. The impurity region can be formed in a self-aligned manner. 842 has an area where the insulating layer 726 extends beyond the edge of the electrode 746. The impurity concentration in the region where the impurity is introduced through the insulating layer 726 of the semiconductor device 42 is The semiconductor layer 742 overlaps with the electrode 746, and the area becomes smaller than the area where the impurity is introduced. In the region where no doping occurs, a lightly doped drain (LDD) region is formed.

[0222] The transistor 843 shown in FIG. 13A2 has an electrode 723, which is different from the transistor 842. The transistor 843 has an electrode 723 formed on a substrate 771. The electrode 723 has a region overlapping with the semiconductor layer 742 via the insulating layer 772. , can function as a back gate electrode.

[0223] Like transistor 844 shown in FIG. 13B1 and transistor 845 shown in FIG. As shown in FIG. 13, the insulating layer 726 in the region not overlapping with the electrode 746 may be entirely removed. As shown in FIG. 13C1 and FIG. 13C2, transistors 846 and 847 are insulated. An edge layer 726 may be left.

[0224] After forming the electrode 746, the transistors 842 to 847 are also formed with the electrode 74. 6 as a mask to introduce impurities into the semiconductor layer 742. According to one aspect of the present invention, the impurity region can be formed in a self-aligned manner. According to one embodiment of the present invention, a good transistor can be realized. Therefore, a high-performance semiconductor device can be realized.

[0225] 14A1 to 14C2 show transistors 842, 843, 844, 845, 846, 847 are cross-sectional views in the channel width direction.

[0226] The transistors 843, 845, and 847 are However, the present invention is not limited to this, and may be applied to transistors 8 and 9. 43, transistor 845, and transistor 847 are not of S-channel structure. It's okay.

[0227] This embodiment may be implemented in appropriate combination with the configurations described in other embodiments. is possible.

[0228] (Embodiment 4) Examples of electronic devices that can use the display device according to one embodiment of the present invention include display devices, personal computers, and the like. personal computers, image storage devices or image reproducing devices equipped with recording media, mobile phones, Game consoles including those with a handheld type, portable data terminals, e-book terminals, video cameras, digital still cameras Cameras such as DSLRs, goggle-type displays (head-mounted displays), navigation systems Audio playback devices (car audio, digital audio players, etc.), Copiers, fax machines, printers, multifunction printers, automated teller machines (ATMs), Examples of such electronic devices include vending machines, etc. Specific examples of such electronic devices are shown in Figures 15A to 15F.

[0229] FIG. 15A shows a digital camera, which includes a housing 961, a shutter button 962, and a microphone 96 3, speaker 967, display unit 965, operation keys 966, zoom lever 968, lens 96 By using the display device of one embodiment of the present invention for the display portion 965, various images can be displayed. It is possible to display.

[0230] FIG. 15B shows a portable data terminal, which includes a housing 911, a display unit 912, a speaker 913, and an operation The display unit 912 has a touch panel function. The display device of one embodiment of the present invention can be used for the display portion 912. This allows a variety of images to be displayed.

[0231] FIG. 15C shows a mobile phone, which includes a housing 951, a display unit 952, an operation button 953, and an external connection The mobile phone has a connection port 954, a speaker 955, a microphone 956, a camera 957, etc. The phone has a touch sensor on the display 952. Any operation can be performed by touching the display unit 952 with a finger or a stylus. In addition, the housing 951 and the display unit 952 are flexible and can be folded as shown in the figure. By using the display device of one embodiment of the present invention for the display portion 952, various Images can be displayed.

[0232] FIG. 15D shows a video camera, which includes a first housing 901, a second housing 902, a display unit 903, and an operation unit. The operation key 904, the lens 905, the connection part 906, the speaker 907, etc. 4 and a lens 905 are provided in the first housing 901, and the display unit 903 is provided in the second housing 90 By using the display device of one embodiment of the present invention for the display portion 903, various Images can be displayed.

[0233] FIG. 15E shows a television set, which includes a housing 971, a display unit 973, operation buttons 974, and a speaker 9 The display unit 973 has a touch sensor 975, a communication connection terminal 976, an optical sensor 977, etc. The display device of one embodiment of the present invention is provided in the display portion 973. By using this, various images can be displayed.

[0234] FIG. 15F shows a digital signage having a large display unit 922. The page is, for example, a large display unit 922 attached to the side of a pillar 921. By using the display device of one embodiment of the present invention for the display device, high-quality display can be achieved.

[0235] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is Noh. EXAMPLES

[0236] In this embodiment, a circuit simulation is used to determine the pixel circuit configuration shown in FIG. In the timing chart shown in 2, the correction data “Vw” and the image data “Vdata” are added together. We confirmed the output obtained by combining the two.

[0237] In the simulation, all the transistors had a channel length of 200 μm and The OS transistor has a width of 60 μm. The capacitance values ​​of the capacitors 111 and 112 are , and 11 fF. The voltages applied to the wiring 121 and the wiring 122 are High, h was set to 5 V and Low was set to 0 V. The wiring 131 is set to “Vref” at 0 V and “Vdata” at The voltage applied to the wiring 132 was set to 0.5 V. The voltage applied to the wiring 133 was set to 0.83 V. The voltage to be used is set to 1.30V, 1.31V, 1.32V, 1.33V, or 1.3 Simulations were performed at 4V and 1.35V. The software used was SPICE.

[0238] The simulation results are shown in Fig. 16 and Fig. 17. In Fig. 16, the horizontal axis is the timing. The vertical axis represents the gate source of the transistor 103. In FIG. 17, the horizontal axis represents the time series according to the timing chart. The vertical axis indicates the time, and the vertical axis indicates the current I OLED This shows that.

[0239] As shown in FIG. 16 and FIG. 17, the light emitting element 114 receives the correction data “Vw”. It was confirmed that the current was increased. In other words, the light emitting element 114 It was confirmed that the brightness of the [Explanation of symbols]

[0240] ND1: node, ND2: node, ND3: node, 10: pixel, 10Bl: subpixel, 1 0Gr: subpixel, 10Re: subpixel, 10Wh: subpixel, 100: display device, 101: Transistor, 102: transistor, 103: transistor, 104: transistor, 1 11: Capacitor element, 112: Capacitor element, 114: Light emitting element, 121: Wiring, 122: Wiring, 128: wiring, 129: wiring, 130: gate driver, 131: wiring, 132: wiring, 133: wiring, 134: wiring, 140: source driver, 150: display unit, 215: display section, 221a: scanning line driving circuit, 231a: signal line driving circuit, 232a: signal line driving circuit , 241a: common line driving circuit, 723: electrode, 726: insulating layer, 728: insulating layer, 729 : insulating layer, 741: insulating layer, 742: semiconductor layer, 744a: electrode, 744b: electrode, 74 6: electrode, 771: substrate, 772: insulating layer, 810: transistor, 811: transistor 820: transistor, 821: transistor, 825: transistor, 826: transistor Transistor, 842: transistor, 843: transistor, 844: transistor, 8 45: transistor, 846: transistor, 847: transistor, 901: housing, 9 02: Housing, 903: Display unit, 904: Operation keys, 905: Lens, 906: Connection unit, 9 07: Speaker, 911: Housing, 912: Display, 913: Speaker, 914: Operation button 919: Camera, 921: Pillar, 922: Display, 951: Housing, 952: Display, 9 53: Operation button, 954: External connection port, 955: Speaker, 956: Microphone, 95 7: Camera, 961: Housing, 962: Shutter button, 963: Microphone, 965: Display 966: Operation key, 967: Speaker, 968: Zoom lever, 969: Lens, 9 71: Housing, 973: Display unit, 974: Operation buttons, 975: Speaker, 976: For communication Connection terminal, 977: optical sensor, 4001: substrate, 4005: sealing material, 4006: substrate, 4010: transistor, 4011: transistor, 4014: wiring, 4015: electrode, 4017: electrode, 4018: FPC, 4019: anisotropic conductive layer, 4020: capacitor, 4021: electrode, 4022: transistor, 4023: transistor, 4030: electrode layer 4031: electrode layer, 4041: printed circuit board, 4042: integrated circuit, 4102: insulating layer , 4103: insulating layer, 4104: insulating layer, 4110: insulating layer, 4111: insulating layer, 411 2: insulating layer, 4200: input device, 4210: touch panel, 4227: electrode, 4228 : Electrode, 4237: Wiring, 4238: Wiring, 4239: Wiring, 4263: Substrate, 4272 b: FPC, 4273b: IC, 4510: Partition, 4511: Light-emitting layer, 4513: Light-emitting device Vice, 4514: Filler

Claims

1. a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitance element, a second capacitance element, a first wiring, a second wiring, a third wiring, and a fourth wiring; one electrode of the light-emitting element is electrically connected to one of the source and drain of the first transistor; one electrode of the light emitting element is electrically connected to one electrode of the first capacitance element; a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor; a gate of the first transistor is electrically connected to one electrode of the second capacitance element; the other electrode of the second capacitance element is electrically connected to the other electrode of the first capacitance element; the other electrode of the second capacitance element is electrically connected to one of the source and the drain of the third transistor; a gate of the third transistor is electrically connected to the first wiring; a gate of the second transistor is electrically connected to the second wiring; the other of the source and the drain of the third transistor is electrically connected to the third wiring; the other of the source and the drain of the second transistor is electrically connected to the fourth wiring; the third wiring has a function of supplying a reference potential or a first potential; the fourth wiring has a function of supplying a second potential; a first period of time, a second period of time after the first period of time, and a third period of time after the second period of time; During the first period, the second transistor is on; During the first period, the third transistor is on; In the first period, the reference potential is input to the other electrode of the first capacitance element and the other electrode of the second capacitance element; In the first period, the second potential is input to a gate of the first transistor and one electrode of the second capacitor; During the second period, the second transistor is off; During the second period, the third transistor is on; In the second period, the first potential is input to the other electrode of the first capacitor and the other electrode of the second capacitor; In the second period, a sum of the first potential and the second potential is held in a gate of the first transistor and one electrode of the second capacitor element, During the third period, the second transistor is off, during the third period, the third transistor is off; in the third period, a sum of the first potential and a third potential is held in the other electrode of the first capacitance element and the other electrode of the second capacitance element; in the third period, a sum of the first potential, the second potential, and the third potential is held in a gate of the first transistor and one electrode of the second capacitor; In the third period, the third potential is held in one electrode of the light-emitting element, one of the source and the drain of the first transistor, and one electrode of the first capacitor; the first potential corresponds to image data; the second potential corresponds to correction data for correcting the image data, A display device, wherein the third potential is an amount of change until a potential of one electrode of the light-emitting element becomes a potential necessary for flowing a current according to a gate-source voltage of the first transistor.

2. In claim 1, the other of the source and the drain of the first transistor is electrically connected to a high potential power supply line; The other electrode of the light-emitting element is electrically connected to a low-potential power line.

3. In claim 1 or 2, The display device, wherein the light-emitting element is an organic light-emitting diode.

4. In any one of claims 1 to 3, each of the first transistor, the second transistor, and the third transistor has a metal oxide in a channel formation region; The metal oxide comprises indium, zinc, and an element M (one or more of aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, and hafnium).

5. 5. An electronic device comprising: the display device according to claim 1; and a camera.

Images