Substrate processing method

Abstract

To perform a process under a proper ignition condition.SOLUTION: A substrate processing method by a substrate processing device is provided including a vacuum container, a rotatable table having a placement surface on which a plurality of substrates are placed and configured to rotate the substrates, a plasma generator having an antenna and configured to generate plasma in the vacuum container, and a first driving unit configured to move the antenna. The substrate processing method includes storing, in a storage unit, ignition condition information in which process conditions and positions of the antenna are associated, determining the position of the antenna of the ignition condition information that matches the process condition set in a recipe on the basis of the ignition condition information with reference to the storage unit, and processing the substrates by causing the first driving unit to move the antenna to the determined position of the antenna.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present disclosure relates to a method for processing a substrate. [Background technology]

[0002] For example, Patent Documents 1 and 2 propose a processing apparatus having an antenna that is movably mounted above a processing chamber, and capable of locally irradiating plasma onto a rotating table when rotating a substrate with multiple films placed on the rotating table to form films. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6584355 [Patent Document 2] Patent No. 2022-112423 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that allow processes to run under proper ignition conditions. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing method using a substrate processing apparatus having a vacuum vessel, a rotary table having a mounting surface for mounting a plurality of substrates and configured to rotate the plurality of substrates, a plasma generator having an antenna and configured to generate plasma in the vacuum vessel, and a first drive unit configured to move the antenna. The substrate processing method includes storing ignition condition information in a storage unit that associates process conditions with positions of the antenna, referring to the storage unit to determine a position of the antenna that corresponds to the process conditions in the ignition condition information that match the process conditions set in a recipe, and moving the antenna to the determined position of the antenna by the first drive unit to process the plurality of substrates. Effect of the Invention

[0006] According to one aspect, the process can be carried out under proper ignition conditions. [Brief description of the drawings]

[0007] [Figure 1] FIG. 2 is a vertical sectional side view showing an example of a film forming apparatus according to an embodiment. [Diagram 2] FIG. 2 is a cross-sectional plan view showing an example of a film forming apparatus according to an embodiment. [Diagram 3] FIG. 2 is a diagram showing an example of a hardware configuration of a control unit according to an embodiment. [Figure 4] FIG. 4 is a diagram showing an example of a functional configuration of a control unit according to an embodiment. [Diagram 5] FIG. 4 is a diagram showing an example of a recipe according to an embodiment. [Figure 6] FIG. 4 is a diagram showing an example of antenna position setting information according to an embodiment. [Figure 7] FIG. 4 is a diagram showing an example of an ignition condition table according to an embodiment. [Figure 8] 1 is a flowchart illustrating an example of a substrate processing method according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Film forming equipment] A film forming apparatus 1 according to an embodiment of the present disclosure will be described with reference to FIGS. 1 and 2. FIG. 1 is a vertical side view showing an example of a film forming apparatus according to an embodiment. FIG. 2 is a horizontal plan view showing an example of a film forming apparatus according to an embodiment. The film forming apparatus 1 is an example of a substrate processing apparatus capable of performing a substrate processing method described below. The film forming apparatus 1 has a generally circular, flat vacuum vessel 11 and a disk-shaped, horizontal rotary table 2 provided within the vacuum vessel 11. The vacuum vessel 11 has a top plate 12 and a vessel body 13. The vessel body 13 forms the side walls and bottom of the vacuum vessel 11.

[0010] A central shaft 21 extending vertically downward from the center of the turntable 2 is provided at the center of the vacuum vessel 11. The central shaft 21 is connected to a revolution rotary drive unit 22 provided so as to close an opening 14 formed at the bottom of the vessel body 13. The turntable 2 is supported in the vacuum vessel 11 via the central shaft 21 and the revolution rotary drive unit 22. The turntable 2 rotates clockwise or counterclockwise in a plan view of the film forming apparatus 1. The revolution rotary drive unit 22 is, for example, an electric actuator such as a motor. The gas supply pipe 15 discharges N2 (nitrogen) gas into the gap between the central shaft 21 and the vessel body 13, thereby preventing the source gas and the oxidizing gas from flowing from the front surface to the back surface of the turntable 2.

[0011] In addition, on the underside of the top plate 12 of the vacuum vessel 11, there are formed a central region forming portion C that is circular in plan view and protrudes so as to face the center of the turntable 2, and two convex portions 17 that spread out from the central region forming portion C toward the outside of the turntable 2 as shown in Fig. 2. The two convex portions 17 have a generally sector-like planar shape with the top cut into an arc.

[0012] The central region forming portion C and the convex portion 17 form a ceiling surface that is lower than the outer regions. The gap between the central region forming portion C and the center of the turntable 2 forms a flow path 18 for N2 gas (see FIG. 1). During processing of a wafer W, which is an example of a substrate, N2 gas is supplied to the flow path 18 from a gas supply pipe connected to the top plate 12, and flows from the flow path 18 toward the entire outer circumference of the turntable 2. This N2 gas prevents the source gas and the oxidizing gas from coming into contact with each other at the center of the turntable 2.

[0013] A flat ring-shaped recess 31 is formed in the bottom of the container body 13 below the turntable 2 and along the circumference of the turntable 2. A ring-shaped slit 32 is opened in the bottom surface of the recess 31 along the circumferential direction of the recess 31, and the slit 32 is formed so as to penetrate the bottom of the container body 13 in the thickness direction. Furthermore, seven ring-shaped heaters 33 for heating the wafers W placed on the turntable 2 are arranged on the bottom surface of the recess 31.

[0014] The heaters 33 are arranged along a concentric circle centered on the rotation center of the turntable 2, and four of the seven heaters 33 are provided inside the slits 32, and the other three are provided outside the slits 32. A shield 34 is provided to cover the heaters 33 from above and close the upper side of the recess 31. A ring-shaped slit 39 is provided in the shield 34 so as to overlap the slit 32, and a support 41 passes through the slits 32 and 39. Exhaust ports 35 and 36 for exhausting the inside of the vacuum container 11 are opened on the outside of the recess 31 at the bottom of the container body 13 (see Figs. 1 and 2). An exhaust mechanism (not shown) composed of a vacuum pump or the like is connected to the exhaust ports 35 and 36.

[0015] As shown in Fig. 2, five circular recesses are formed on the surface of the turntable 2 along the direction of rotation of the turntable 2, and a circular wafer holder 24 is provided in each recess. As shown in Fig. 1, a recess 25 is formed on the surface of the wafer holder 24, and a wafer W is stored horizontally in the recess 25. Therefore, the bottom surface of the recess 25 forms a mounting surface on which the wafer W is placed. In this example, the height of the sidewall of the recess 25 is set to be the same as the thickness of the wafer W, for example, 1 mm.

[0016] For example, three support columns 41 extend vertically downward from positions spaced apart from each other in the circumferential direction on the back surface of the turntable 2. As shown in Fig. 1, each support column 41 penetrates the bottom of the container body 13 via slits 32, 39 and is connected to a support ring 42, which is a connection portion provided below the container body 13. The support ring 42 is formed along the rotation direction of the turntable 2 and is provided horizontally so as to be suspended from the container body 13 by the support columns 41, and rotates together with the turntable 2.

[0017] Further, a rotating shaft 26 for rotation extends vertically downward from the lower center of the wafer holder 24. The lower end of the rotating shaft 26 penetrates the turntable 2, penetrates the bottom of the container body 13 via the slit 32, and further penetrates the support ring 42 and the magnetic seal unit 20 provided below the support ring 42 to be connected to the rotation drive unit 27 for rotation. The magnetic seal unit 20 is composed of a bearing for rotatably supporting the rotating shaft 26 with respect to the support ring 42, and a magnetic seal (magnetic fluid seal) for sealing the gap around the rotating shaft 26.

[0018] The magnetic seal is provided to prevent particles generated from the bearing, such as lubricating oil used in the bearing, from diffusing into the vacuum atmosphere outside the magnetic seal unit 20. The rotating shaft 26 is supported by the bearing, so that the wafer holder 24 is slightly raised from the turntable 2. The rotation drive unit 27 is provided below the support ring 42 so as to be supported by the support ring 42 via the magnetic seal unit 20, and rotates the rotating shaft 26 around its axis. The rotation drive unit 27 is, for example, an electric actuator such as a motor. In the film forming apparatus 1, the wafer W revolves as the turntable 2 rotates, and the wafer holder 24 rotates in parallel with the rotation of the turntable 2, so that the wafer W rotates.

[0019] 1, the shield ring 44 is provided so as to close the slit 32 of the container body 13 from the lower side of the container body 13, and is configured to rotate together with the turntable 2. Therefore, the above-mentioned rotating shaft 26 and the support pillar 41 are provided so as to penetrate this shield ring 44. The shield ring 44 plays the role of a heat shield plate to prevent the rotation drive unit 27 for self-rotation from being exposed to each gas and from being excessively heated.

[0020] Further, below the vessel body 13, a lower wall 45 is formed, which is concave in cross section and surrounds the support ring 42, the rotation drive unit 27, and the shield ring 44. The lower wall 45 is formed in a ring shape along the rotation direction of the turntable 2. Furthermore, five charging mechanisms 46 (only one is shown in FIG. 1) are provided at the bottom of the lower wall 45, spaced apart in the circumferential direction. When the wafer W is not being processed, the turntable 2 is stationary so that the rotation drive unit 27 is located directly below the charging mechanism 46, and each rotation drive unit 27 can be charged by non-contact power supply from the charging mechanism 46. The gas supply path 47 opens into the space surrounded by the lower wall 45. For example, during processing of the wafer W, the gas nozzle 48 supplies N2 gas to the space surrounded by the lower wall 45 through the gas supply path 47 to purge the space. For example, the space communicates with an exhaust path that connects the exhaust ports 35, 36 with the above-mentioned exhaust mechanism (not shown), and even if particles are generated in the space, the particles are purged and removed by N2 gas.

[0021] A transfer port 37 for the wafer W and a gate valve 38 for opening and closing the transfer port 37 are provided in the side wall of the vessel body 13 (see FIG. 2), and the wafer W is transferred between the transfer device that enters the vacuum vessel 11 via the transfer port 37 and the recessed portion 25. Specifically, through holes are formed in corresponding positions in the bottom surface of the recessed portion 25, the bottom of the vessel body 13, and the turntable 2, and the tips of pins move up and down through each through hole. The wafer W is transferred via the pins. The pins and the through holes in the various portions through which the pins pass are not shown in the drawings.

[0022] 2, a raw material gas nozzle 51, a separation gas nozzle 52, an oxidizing gas nozzle 53, a plasma generation gas nozzle 54, and a separation gas nozzle 55 are arranged on the turntable 2 in this order at intervals in the rotation direction of the turntable 2. Each of the gas nozzles 51 to 55 is formed in a rod shape extending horizontally along the diameter of the turntable 2 from the side wall toward the center of the vacuum vessel 11, and discharges gas downward from a large number of discharge ports formed along the diameter. Each of the gas nozzles 51 to 55 is an example of a gas supply unit that supplies gas into the vacuum vessel 11.

[0023] For example, the film forming apparatus 1 forms a SiO2 film on the wafer W by ALD (Atomic Layer Deposition). In this case, the film forming apparatus 1 supplies BTBAS (bisterial butyl amino silane) gas as a raw material gas to the wafer W, and causes it to be adsorbed on the substrate W. Ozone (O3) gas, which is an oxidizing gas that oxidizes the adsorbed BTBAS gas, is supplied to form a molecular layer of SiO2 (silicon oxide), and the molecular layer is exposed to plasma generated from a plasma generating gas in order to modify it. This series of processes is repeated multiple times to form a SiO2 film.

[0024] The raw gas nozzle 51 constituting the process gas supply mechanism discharges the above-mentioned BTBAS (bisterial butyl amino silane) gas. The nozzle cover 57 covers the raw gas nozzle 51 and is formed in a fan shape spreading from the raw gas nozzle 51 toward the upstream side and downstream side in the rotation direction of the turntable 2. The nozzle cover 57 has a role of increasing the concentration of the BTBAS gas below it and increasing the adsorption of the BTBAS gas to the wafer W. The oxidizing gas nozzle 53 discharges the above-mentioned ozone gas (O3). The separation gas nozzles 52 and 55 are gas nozzles that discharge N2 gas and are arranged so as to divide the fan-shaped convex portion 17 of the top plate 12 in the circumferential direction. The plasma generating gas nozzle 54 discharges a plasma generating gas consisting of a mixed gas of, for example, argon (Ar) gas and oxygen (O2) gas.

[0025] The top plate 12 is provided with a fan-shaped opening along the rotation direction of the turntable 2, and a cup-shaped sapphire glass 61 made of a dielectric material such as quartz is provided to cover the opening (see Figs. 1 and 2). This sapphire glass 61 is provided between the oxidizing gas nozzle 53 and the protrusion 62 when viewed in the rotation direction of the turntable 2. In Fig. 2, the position where the sapphire glass 61 is provided is indicated by a dashed line. The protrusion 62 is provided along the periphery of the lower surface of the sapphire glass 61. The tip of the plasma generation gas nozzle 54 penetrates the protrusion 62 from the outer periphery of the turntable 2 so that gas can be discharged to the area surrounded by the protrusion 62. The protrusion 62 has the role of suppressing the intrusion of N2 gas, ozone gas, and BTBAS gas below the sapphire glass 61 and suppressing a decrease in the concentration of the plasma generation gas.

[0026] A recess is formed on the upper side of the sapphire glass 61, and a box-shaped Faraday shield 63 that opens upward is disposed in this recess. An antenna 65 is provided on the bottom surface of the Faraday shield 63 via an insulating plate member. The antenna 65 has a configuration in which a metal wire is wound in a coil shape around a vertical axis. A support part 66 is connected to the antenna 65, and a matching box 150 and a high-frequency power supply 160 are connected via the support part 66. A slit 67 is formed on the bottom surface of the Faraday shield 63 to prevent the electric field component of the electromagnetic field generated in the antenna 65 when a high-frequency wave is applied to the antenna 65 from moving downward and to direct the magnetic field component downward (see FIG. 2). The slits 67 extend in a direction perpendicular (intersecting) to the winding direction of the antenna 65, and are formed in large numbers along the winding direction of the antenna 65. With each part configured in this way, the antenna 65 is coupled to the vacuum vessel 11 and configured to generate plasma within the vacuum vessel 11. When the high frequency power supply 160 is turned on and a high frequency is applied to the antenna 65, the plasma generating gas supplied below the sapphire glass 61 can be turned into plasma.

[0027] A plasma generator 180 having a movable antenna 65 is provided above the vacuum vessel 11. The plasma generator 180 has the antenna 65, a support 66, an electric actuator 140, a frame 141, a fixed part 142, and a driving force transmission part 143. The frame 141 is a base for installing the electric actuator 140 on the top plate 12 that constitutes the upper surface of the vacuum vessel 11. The support 66 is connected to the center of the upper part of the antenna 65 and supports the antenna 65. The support 66 is fixed to the fixed part 142 and suspends the antenna 65 via the support 66. The electric actuator 140 such as a motor moves (raises and lowers) the fixed part 142 in the vertical direction via the driving force transmission part 143. The driving force transmission part 143 transmits a driving force for moving the fixed part 142 up and down to the fixed part 142 to move it. As a result, the plasma generator 180 can move the antenna 65 supported by the support part 66 in the vertical direction of the turntable 2 by being driven by the electric actuator 140. In this configuration, the drive system of the plasma generator 180 (electric actuator 140, frame 141, fixed part 142, driving force transmission part 143, and support part 66) is an example of a first drive part configured to move the antenna 65. Note that the electric actuator 140 can also move the fixed part 142 in the horizontal direction via the driving force transmission part 143.

[0028] On the turntable 2, the area below the nozzle cover 57 of the raw material gas nozzle 51 is the adsorption area R1 where the raw material gas BTBAS gas is adsorbed, and the area below the oxidizing gas nozzle 53 is the oxidation area R2 where the BTBAS gas is oxidized by ozone gas. The area below the sapphire glass 61 is the plasma formation area R3 where the SiO2 film is modified by plasma. The areas below the convex portion 17 are separated from the adsorption area R1 and the oxidation area R2 by N2 gas discharged from the separation gas nozzles 52 and 55, and form separation areas D and D for preventing the raw material gas and the oxidizing gas from mixing.

[0029] The exhaust port 35 opens to the outside between the adsorption region R1 and the adjacent separation region D downstream of the adsorption region R1 in the rotation direction, and exhausts excess BTBAS gas. The exhaust port 36 opens to the outside near the boundary between the plasma formation region R3 and the adjacent separation region D downstream of the plasma formation region R3 in the rotation direction, and exhausts excess O3 gas and plasma generation gas. N2 gas supplied from each separation region D, the gas supply pipe 15 below the turntable 2, and the central region forming portion C of the turntable 2 are also exhausted from each exhaust port 35, 36.

[0030] The film forming apparatus 1 is provided with a control unit 100 that controls the operation of the entire apparatus. The control unit 100 is composed of, for example, a computer. The control unit 100 stores a program for executing a substrate processing method. The program transmits control signals to each part of the film forming apparatus 1 to control the operation of each part. For example, the flow rate of gas supplied from the gas holes 56 of each gas nozzle 51 to 55, the temperature of the wafer W by the heater 33, the supply amount of N2 gas from the gas supply pipe 15, the rotation speed of the turntable 2 and the wafer holder 24, and the position of the antenna 65 are controlled according to the control signals. In addition, the recipe (program) includes process conditions for executing the substrate processing method set for each step. The recipe and other programs are installed in the control unit 100 from a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk.

[0031] [Control Unit] Next, an example of the hardware configuration and functional configuration of the control unit 100 according to an embodiment will be described with reference to Fig. 3 and Fig. 4. Fig. 3 is a diagram showing an example of the hardware configuration of the control unit 100 according to an embodiment. Fig. 4 is a diagram showing an example of the functional configuration of the control unit 100 according to an embodiment. As shown in Fig. 3, the control unit 100 has a CPU (Central Processing Unit) 301, a ROM (Read Only Memory) 302, a RAM (Random Access Memory) 303, an I / O port 304, an operation panel 305, and an HDD 306 (Hard Disk Drive). Each unit is connected by a bus B.

[0032] The CPU 301 controls the operation of the control unit 100 based on a recipe or other programs. For example, the CPU 301 controls substrate processing of a plurality of wafers W placed on the turntable 2 based on a recipe.

[0033] The ROM 302 is configured by an EEPROM (Electrically Erasable Programmable ROM), a flash memory, a hard disk, etc., and is a storage medium that stores programs, recipes, etc. of the CPU 301. The RAM 303 functions as a work area for the CPU 301, etc.

[0034] The I / O port 304 acquires values ​​of various sensors that detect temperature, pressure, gas flow rate, etc. from various sensors attached to the film forming apparatus 1, and transmits them to the CPU 301. The I / O port 304 also outputs control signals output by the CPU 301 to each part (the turntable 2, the vacuum pump 640, etc.) of the film forming apparatus 1. An operation panel 305 that enables an operator to operate the film forming apparatus 1 is also connected to the I / O port 304. The HDD 306 is an auxiliary storage device, and may store recipes, programs, etc. that define substrate processing procedures.

[0035] 4 shows an example of a functional configuration, the control unit 100 has a storage unit 101, a selection unit 103, a determination unit 104, a process execution unit 105, and a display control unit 106. The selection unit 103, the determination unit 104, the process execution unit 105, and the display control unit 106 are realized, for example, by the CPU 301 shown in FIG. 3 executing the recipe and other programs loaded on the RAM 303. The storage unit 101 is realized, for example, by the ROM 302, RAM 303, or HDD 306 shown in FIG. 3.

[0036] The storage unit 101 stores recipes 108 (such as recipe A) that indicate substrate processing procedures to be executed by the film forming apparatus 1. FIG. 5 is a diagram showing an example of the recipe 108 according to an embodiment. For example, the recipe 108 has step 1 (Step 1), step 2 (Step 2), and step 3 (Step 3), and has an item of process conditions 108a for each step. In addition, the recipe 108 has an item of ignition condition table information (Table) 108b. For example, in steps 1 to 3, Table 1 is specified as the ignition condition table information 108b. The ignition condition table information 108b is selected from a plurality of ignition condition tables 110 (see FIG. 7) stored in the storage unit 101.

[0037] The storage unit 101 also stores antenna position setting information 109. FIG. 6 is a diagram showing an example of the antenna position setting information 109 according to an embodiment. In the antenna position setting information 109, the origin position of the antenna 65 is set to 0 mm, and positions 1 to 5 of the antenna 65 are stored in association with set values ​​of the antenna 65 from the origin position of 1 to 5 mm. For example, position 1 of the antenna 65 is set at a position 1 mm higher than the origin position. In the example of FIG. 6, five positions of the antenna 65 are set, but the present invention is not limited to this, and multiple positions of the antenna 65 can be set.

[0038] Furthermore, the storage unit 101 stores an ignition condition table 110. Fig. 7 is a diagram showing an example of the ignition condition table 110 according to an embodiment. The ignition condition table 110 stores ignition condition information 111-115 in which process conditions 110a and antenna positions 110b are associated with each other. A plurality of pieces of ignition condition information may be stored for each of the five ignition condition tables 110 (Tables 1-5).

[0039] In the process condition 110a, process conditions related to the plasma ignition conditions are set among the plasma conditions set in the recipe 108. In the example of Fig. 7, the gas type, the gas flow rate of each gas, the pressure inside the vacuum vessel 11, and the RF power supplied to the antenna 65 are stored in each of the ignition condition information 111 to 115. A plurality of gas types can be set, but a single gas may also be set. In the example of Fig. 7, three gas types are set.

[0040] The ignition state of plasma varies depending on the gas type, gas flow rate, pressure, and RF power. For example, if the gas type is hydrogen, ignition is easy. For example, if the gas flow rate is low, ignition is difficult. For example, ignition is easy if the pressure inside the vacuum vessel 11 is high. For example, ignition is easy if the RF power is high.

[0041] Therefore, the process conditions 110a of the ignition condition information 111-115 include at least the gas species that are factors that cause fluctuations in the ignition state of plasma, the gas flow rate of each gas, the pressure inside the vacuum vessel 11, and the RF power supplied to the antenna 65. The storage unit 101 stores the antenna position 110b for each of the process conditions 110a of the multiple ignition condition information 111-115.

[0042] The selection unit 103 selects an ignition condition table specified in the recipe 108 from a plurality of ignition condition tables 110 stored in the storage unit 101. In the example of FIG. 5, the selection unit 103 selects “Table 1” specified in the ignition condition table information 108b of the recipe 108.

[0043] The determination unit 104 refers to the selected ignition condition table and determines the antenna position 110b corresponding to the process condition 110a that matches the process condition set in the recipe .

[0044] The process execution unit 105 moves the antenna 65 to the determined antenna position using the electric actuator 140. After moving the antenna 65, the process execution unit 105 controls the process conditions according to a specified recipe to simultaneously process multiple wafers W placed on the turntable 2.

[0045] Display control unit 106 causes various screens, such as a screen for setting antenna position setting information 109 and a screen for selecting ignition condition table 110 specific to recipe 108, to be displayed on operation panel 305 operated by an operator. Display control unit 106 may display recipe 108. Operation panel 305 is an example of a display device.

[0046] [Substrate processing method] Next, a substrate processing method performed in the film forming apparatus 1 will be described with reference to Fig. 8. Fig. 8 is a flow chart showing an example of the substrate processing method ST according to an embodiment. The substrate processing method ST is controlled by the control unit 100 and performed by the film forming apparatus 1, for example.

[0047] In the substrate processing method ST, first, in step ST1, the selection unit 103 selects a recipe. Next, in step ST2, the selection unit 103 selects an ignition condition table specified in the selected recipe. When the selection unit 103 selects the recipe 108 shown in FIG. 5, the selection unit 103 selects "Table 1" in step ST2.

[0048] Next, in step ST3, the determination unit 104 determines which process conditions 110a set in the ignition condition information of the selected ignition condition table match the process conditions set in step 1 of the recipe.

[0049] In the example of FIG. 7, the determination unit 104 searches for process conditions 110a of the ignition condition information 111-115 set in the ignition condition table 110 of "Table 1" that match the process conditions 108a set in step 1 of the recipe 108 shown in FIG. 5.

[0050] In this case, none of the process conditions 110a in the ignition condition information 111-115 matches the process conditions 108a set in step 1 of the recipe 108. Therefore, the determination unit 104 determines "No" in step ST3 and proceeds to step ST6. The process execution unit 105 controls the position of the antenna 65 to the process conditions in step 1 of the recipe without moving it from the origin position, and simultaneously processes the multiple wafers W placed on the turntable 2.

[0051] Next, in step ST7, the process execution unit 105 determines whether there is a next step in the recipe. In the example of FIG. 5, there is a next step (step 2) in the recipe 108. Therefore, the process execution unit 105 determines "Yes" in step ST7 and returns to step ST3. The determination unit 104 determines which of the process conditions 110a set in the ignition condition table 110 of "Table 1" matches the process condition 108a set in step 2 of the recipe.

[0052] 5 and 7, among the process conditions 110a in the ignition condition table 110, the process conditions 110a in the ignition condition information 111 match the process conditions 108a set in step 2 of the recipe 108. Therefore, the determination unit 104 judges "Yes" in step ST3 and proceeds to step ST4, where the determination unit 104 determines the position of the antenna 65 to be antenna position 110b in the ignition condition information 111. In the example of FIG. 7, the determination unit 104 determines the position to be "position 1" in the ignition condition information 111.

[0053] Next, in step ST5, the process execution unit 105 moves the antenna 65 to the determined antenna position using the electric actuator 140. In the example of Fig. 7, the process execution unit 105 moves the antenna 65 to position 1. As a result, the position of the antenna 65 is raised 1 mm from the origin position of the antenna 65, as shown in Fig. 6.

[0054] After moving the antenna 65, the process execution unit 105 controls the process conditions according to the designated recipe, and processes the multiple wafers W placed on the turntable 2 simultaneously.

[0055] Next, in step ST7, the process execution unit 105 determines whether there is a next step in the recipe. In the example of FIG. 5, there is a next step (step 3) in the recipe 108. Therefore, the process execution unit 105 determines "Yes" in step ST7 and returns to step ST3. The determination unit 104 determines which of the process conditions 110a set in the ignition condition table 110 of "Table 1" matches the process condition 108a set in step 3 of the recipe.

[0056] 5 and 7, among the process conditions 110a in the ignition condition table 110, the process conditions 110a in the ignition condition information 115 match the process conditions 108a set in step 3 of the recipe 108. Therefore, the determination unit 104 judges "Yes" in step ST3 and proceeds to step ST4, where the determination unit 104 determines the position of the antenna 65 to be antenna position 110b in the ignition condition information 115. In the example of FIG. 7, the determination unit 104 determines the position to be "position 5" in the ignition condition information 111.

[0057] Next, in step ST5, the process execution unit 105 moves the antenna 65 to the determined antenna position using the electric actuator 140. In the example of Fig. 7, the process execution unit 105 moves the antenna 65 to position 5. As a result, the position of the antenna 65 is raised 5 mm from the origin position of the antenna 65, as shown in Fig. 6.

[0058] After moving the antenna 65, the process execution unit 105 controls the process conditions according to the designated recipe, and processes the multiple wafers W placed on the turntable 2 simultaneously.

[0059] Next, in step ST7, the process execution unit 105 judges whether or not there is a next step in the recipe. In the example of Fig. 5, there is no step after step 3 in the recipe 108. Therefore, this process is terminated.

[0060] As described above, according to the substrate processing method of this embodiment, the ignition condition table 110 stores the process conditions 110a and the antenna position 110b related to the plasma ignition conditions in association with the ignition condition information 111-115. Then, the position (height) of the antenna 65 is automatically adjusted to the antenna position 110b corresponding to the process conditions 110a of the ignition condition information that matches the process conditions 108a set in the recipe. As a result, by optimizing the position of the antenna 65, the plasma can be ignited stably under the appropriate plasma ignition conditions. This can improve the in-plane uniformity of the film in the substrate processing using plasma, and improve the process performance.

[0061] In addition, by optimizing the position of the antenna 65, the devices around the antenna 65 can be protected. If the process is performed with the antenna 65 in the position at the time of RF ignition, the devices around the antenna 65 will be significantly damaged. For example, as shown in FIG. 1, the sapphire glass 61 arranged near the antenna 65 will be significantly damaged if the antenna 65 approaches. For this reason, the position of the antenna 65 during the process of the next step is automatically adjusted to a higher position than the position of the antenna 65 at the time of RF ignition in a certain step. This makes it possible to protect the antenna 65 itself and the devices around the antenna 65, such as the sapphire glass 61. This makes it possible to extend the life of these devices.

[0062] 5 omits description of other process conditions such as the revolution and rotation speeds of the turntable 2. The process execution unit 105 rotates the turntable 2 around the central axis 21 according to the revolution rotation speed set in the recipe, and rotates the wafer holder 24 around the rotation axis 26 according to the rotation speed.

[0063] While controlling the rotation of the turntable 2, the process execution unit 105 supplies gas from the gas supply unit (gas nozzles 51-55) to a gas supply region on a part of the surface of the turntable 2, and forms a film on the wafer W that repeatedly passes through the gas supply region while revolving. Furthermore, the wafer W that repeatedly passes through the gas supply region is rotated on its own axis by rotating the wafer holder 24 while revolving. When plasma is generated, the wafer W that passes under the sapphire glass 61 is subjected to plasma processing.

[0064] [Variations] Instead of automatically adjusting the position of the antenna 65 using the electric actuator 140, the position (height) of the turntable 2 may be automatically adjusted. The position of the antenna 65 may be automatically adjusted using the electric actuator 140, and the position (height) of the turntable 2 may also be automatically adjusted.

[0065] The position (height) of the turntable 2 can be automatically adjusted using the revolution rotary drive unit 22. The revolution rotary drive unit 22 is an example of a second drive unit configured to move the turntable 2. The revolution rotary drive unit 22 moves (raises and lowers) the turntable 2 while rotating it around the central axis 21, and automatically adjusts it to the determined position of the turntable 2. In this case, the ignition condition table 110 stores the position of the turntable 2 in association with the process condition 110a. Therefore, the determination unit 104 refers to the ignition condition table 110 and determines the position of the turntable corresponding to the process condition 110a of the ignition condition information that matches the process condition 108a set in the recipe. Then, the revolution rotary drive unit 22 moves the turntable 2 to the determined position of the turntable, and multiple wafers W are processed in that state. This makes it possible to stably ignite plasma while improving the in-plane uniformity of the substrate processing.

[0066] The tilt angle of the antenna may be automatically adjusted. The tilt angle of the antenna can be automatically adjusted using the electric actuator 140. At this time, the support part 66' shown in FIG. 1 is connected to the right end or the left end of the antenna 65. In this configuration, the drive system of the plasma generator 180 (electric actuator 140, frame 141, fixed part 142, driving force transmission part 143, support part 66') is an example of a third drive part configured to change the tilt angle of the antenna 65. The electric actuator 140 pulls up the end part of the antenna 65, thereby tilting the antenna 65 obliquely. This allows the antenna 65 to be automatically adjusted to the determined tilt angle of the antenna.

[0067] In this case, the ignition condition table 110 stores the tilt angle of the antenna in association with the process condition 110a. Therefore, the determination unit 104 refers to the ignition condition table 110 and determines the tilt angle corresponding to the process condition 110a of the ignition condition information that matches the process condition 108a set in the recipe. Then, the electric actuator 140 is driven to control the antenna 65 to the determined tilt angle, and then a plurality of wafers W are processed. This makes it possible to stably ignite the plasma while improving the in-plane uniformity of the substrate processing.

[0068] As described above, according to the substrate processing method of the present embodiment, a process can be performed under appropriate ignition conditions.

[0069] The substrate processing method according to the embodiment disclosed herein should be considered as illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without contradiction, and can be combined without contradiction.

[0070] When only one condition is different among the process conditions 110a in the ignition condition table 110 and the other conditions are the same, it is possible to select whether or not to perform linear complementation for the one condition. For example, when the gas flow rate of gas 1 in FIG. 7 is 1000 sccm, the antenna position 110b is "position 1", and when the gas flow rate of gas 1 is 1100 sccm, the antenna position 110b is "position 2". Assume that the other process conditions (gas 2 (gas flow rate), gas 3 (gas flow rate), pressure, RF power) are set to the same values. When linear complementation is selected for the recipe or specific parameter, when the gas flow rate of gas 1 is 1050 sccm, the other process conditions are set to the same values, so the antenna position may be determined to be an intermediate position between "position 1" and "position 2". When "position 1" is 1 mm from the origin position of the antenna 65 and "position 2" is 2 mm from the origin position, the antenna 65 may be automatically adjusted to 1.5 mm from the origin position between "position 1" and "position 2".

[0071] 1 has been described as an example of a substrate processing apparatus for performing the substrate processing method according to the present embodiment, but is not limited thereto. A substrate processing apparatus having a vacuum vessel, a rotary table having a mounting surface for mounting a plurality of substrates and configured to rotate the plurality of substrates, an antenna coupled to the vacuum vessel and configured to generate plasma in the vacuum vessel, and a first drive unit configured to move the antenna may be used that has a different configuration from the film forming apparatus 1 of FIG. [Explanation of symbols]

[0072] 1 Film deposition equipment 2 Rotating table 11 Vacuum container 21 Center axis 22 Rotation drive unit for revolution 24 Wafer holder 26 Rotation axis 27 Rotation drive unit for self-rotation 100 Control section 101 Storage section 103 Selection section 104 Decision Section 105 Process Execution Unit 106 Display control unit 108 Recipes 109 Antenna position setting information 110 Ignition Condition Table 140 Electric Actuator 180 Plasma Generator

Claims

1. A vacuum vessel; a rotation table having a mounting surface on which a plurality of substrates are mounted and configured to rotate the plurality of substrates; a plasma generator having an antenna and configured to generate a plasma within the vacuum vessel; A first drive configured to move the antenna; A substrate processing method using a substrate processing apparatus having the following features: storing ignition condition information in a storage unit, the ignition condition information correlating the process conditions with the position of the antenna; determining a position of the antenna corresponding to a process condition of the ignition condition information that matches a process condition set in a recipe, with reference to the storage unit; moving the antenna to the determined position of the antenna by the first driving unit, and processing a plurality of the substrates.

2. The process condition of the ignition condition information is a process condition related to the ignition condition of the plasma. The method for processing a substrate according to claim 1 .

3. The process conditions of the ignition condition information include a gas type, a gas flow rate of the gas type, a pressure in the vacuum vessel, and an RF power supplied to the antenna. The substrate processing method according to claim 2 .

4. The storage unit stores a plurality of ignition condition tables in which a plurality of pieces of ignition condition information are stored, selecting the ignition condition table specified in the recipe from the plurality of ignition condition tables, and determining, from the plurality of ignition condition information of the selected ignition condition table, a position of the antenna corresponding to a process condition of the ignition condition information that matches the process condition set in the recipe; The substrate processing method according to any one of claims 1 to 3.

5. The substrate processing apparatus includes a second drive unit configured to move the rotary table, the ignition condition information includes a position of the rotary table in association with the process condition; determining a position of the rotary table corresponding to a process condition of the ignition condition information that matches a process condition set in a recipe, with reference to the storage unit; moving the turntable to the determined position of the turntable by the second driving unit and processing the plurality of substrates; The substrate processing method according to any one of claims 1 to 3, comprising:

6. the substrate processing apparatus has a third drive unit configured to change a tilt angle of the antenna, the ignition condition information includes a tilt angle of the antenna in association with the process condition, determining a tilt angle of the antenna corresponding to a process condition of the ignition condition information that matches a process condition set in a recipe, with reference to the storage unit; tilting the antenna to the determined tilt angle of the antenna by the third driving unit, and processing the plurality of substrates; The substrate processing method according to any one of claims 1 to 3, comprising:

Images