Substrate treating device and substrate treating method

Abstract

To reduce a time required for measuring a flow rate of gas performed by using a flow rate measuring device in a substrate treating system.SOLUTION: A substrate treating device includes: a first chamber; a first gas box that supplies a gas to the first chamber via multiple first distributary channels and has a first flow rate controller; a first flowmeter and a first valve provided in each of the multiple first distributary channels; a second chamber; a second gas box that supplies a gas to the second chamber via multiple second distributary channels, and has a second flow rate controller; and a second flowmeter and a second valve provided in each of the multiple second distributary channels; and a control section. The control section executes the steps of (a) to (l).SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a gas branch supply system that branches and supplies gas at a desired flow rate ratio from a gas supply source to gas branch paths. In this system, a total flow rate is calculated from a flow rate sensor provided in each gas branch path, and a flow rate value of each branch path is calculated from the total flow rate and a flow rate ratio command signal to control an electric valve. At this time, the branch path with the maximum set flow rate value is placed in an uncontrolled state and its opening is kept at a constant value, while the openings of the other branch paths are controlled to the set openings, and then the branch flow rates of each branch path are feedback-controlled. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-49569 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure appropriately controls the distribution of gas supplied to a chamber. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus comprising: a first chamber; a first gas box including a first flow rate controller that supplies gas to the first chamber via a plurality of first branch paths; a first flow meter and a first valve provided in each of the plurality of first branch paths; a second chamber; a second gas box including a second flow rate controller that supplies gas to the second chamber via a plurality of second branch paths; a second flow meter and a second valve provided in each of the plurality of second branch paths; and a controller; (a) when the gas supplied from the first gas box is diverted in the first branch path by controlling the opening of each of the first valves so as to have a first set flow rate ratio, recording a flow rate measured by each of the first flow meters as a first measured diverted flow rate and an opening of each of the first valves as a first opening; (b) in one of the first branch paths, controlling and opening the first valve to the first opening and closing the first valve in all other first branch paths; and (c) (b) calculating a first set divided flow rate based on the first set flow rate ratio in the first divided flow path in which the first valve is opened in the step, and recording a flow rate measured by the first flow meter when the gas is supplied under control by the first flow controller so as to reach the first set divided flow rate as a second measured divided flow rate; and (d) calculating a flow rate difference between the first measured divided flow rate and the second measured divided flow rate, and recording a flow rate in the first flow controller as a second set divided flow rate when the gas is supplied under control by the first flow controller so as to eliminate the flow rate difference. (e) performing steps (b) to (d) based on the first aperture in each of all other first branch paths in which the first valve is closed in step (b), and recording a second set branch flow rate for each of the first branch paths; (f) calculating a second set flow rate ratio based on the second set branch flow rates recorded in steps (d) and (e); and (g) calculating a second set flow rate ratio in the second branch path when the gas is supplied by controlling the aperture of each of the second valves so as to achieve the second set flow rate ratio.(h) controlling and opening the second valve to the second opening in one of the second branch paths and closing the second valve in all of the other second branch paths; and (i) calculating a second set branch flow rate based on the second set flow rate ratio in the second branch path in which the second valve is opened in the (h) step, and determining a flow rate measured by the second flow meter as a fourth measured branch flow rate when the gas is supplied under control by the second flow controller to be the second set branch flow rate. (j) calculating a flow rate difference between the third measured divided flow rate and the fourth measured divided flow rate, and recording the flow rate in the second flow controller as a third set divided flow rate when the gas is supplied under control by the second flow controller so as to eliminate the flow rate difference; (k) executing the steps (i) and (j) based on the first opening for each of all other first divided paths for which the first valve is closed in the step (h), and recording the third set divided flow rate for each; and (l) calculating a third set flow rate ratio based on the third set divided flow rates recorded in the steps (d) and (e). Effect of the Invention

[0006] According to the present disclosure, the flow of gas supplied to a chamber can be appropriately divided and controlled. [Brief description of the drawings]

[0007] [Figure 1] 1 is a plan view showing an outline of a configuration of a substrate processing system according to an embodiment of the present invention; [Diagram 2] 1 is a schematic diagram illustrating an outline of gas flow paths and components in a substrate processing system according to an embodiment of the present invention. [Diagram 3] 4 is a schematic diagram showing an outline of the configuration of a flow dividing section in one chamber according to the present embodiment. FIG. [Figure 4]13 is a schematic diagram showing an outline of the configuration of a flow dividing section in another chamber according to the present embodiment. FIG. [Diagram 5] 1 is a flowchart showing an outline of the configuration of a substrate processing method according to an embodiment of the present invention. [Figure 6] 1 is a flowchart showing an outline of the configuration of a substrate processing method according to an embodiment. [Figure 7] 1 is a flowchart showing an outline of the configuration of a substrate processing method according to an embodiment. [Figure 8] 1 is a flowchart showing an outline of the configuration of a substrate processing method according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In a manufacturing process of a semiconductor device, various gas processes such as a film forming process, a cleaning process, and other plasma processes are performed on a semiconductor wafer (hereinafter referred to as a "substrate") under a desired gas atmosphere. These gas processes are performed in a substrate processing system equipped with a vacuum processing chamber (hereinafter referred to as a "chamber") capable of controlling the inside to a reduced pressure atmosphere. During the gas processes, gas is introduced from a gas supply source (hereinafter referred to as a "gas box") to the chamber through a plurality of gas inlets. A plurality of branch paths are provided on the gas supply path corresponding to the plurality of gas inlets. In order to perform a desired substrate process in the chamber, it is important to precisely control the flow rate ratio of the gases introduced from each gas inlet, i.e., the flow rate ratio of the gases supplied to each branch path.

[0009] The gas branch supply system described in Patent Document 1 controls the gas flow ratio in such a substrate processing system. In this system, a total flow rate is calculated from a flow sensor provided in each gas branch passage, and a flow rate value of each branch passage is calculated from the total flow rate and a flow rate ratio command signal to control an electric valve. At this time, the branch passage with the maximum set flow rate value is placed in an uncontrolled state and its opening is kept constant, while the openings of the other branch passages are controlled to the set openings, and then the branch flow rates of each branch passage are feedback-controlled. According to the gas branch supply system described in Patent Document 1, the gas supply amount in one chamber can be controlled to a desired flow rate ratio.

[0010] Incidentally, a substrate processing system may be provided with a plurality of chambers. In the substrate processing system, a process recipe for performing a desired substrate processing is commonly used among the plurality of chambers. However, the flowmeters provided in each branch may have an instrumental error. As an example of the instrumental error, a value obtained by passing a gas at a certain flow rate through one branch and measuring the flow rate with a flowmeter provided in the branch may differ from a value obtained by passing the gas through another branch in another chamber and measuring the flow rate with another flowmeter. Therefore, when a process recipe established to perform a desired substrate processing in one chamber is applied to another chamber, gas may be supplied at different branch flow rates (flow rate ratios) due to the instrumental errors of the flowmeters in the plurality of branch paths.

[0011] The flow meters in the multiple branch paths are calibrated using an inert gas (N2), but when the actual gas used in the process is passed through, the flow rate of the gas may deviate from the calibrated value. In addition, when a thermal mass flow sensor (MFM) is used as the flow meter, the lower the pressure on the upstream side, the more likely it is that an instrument error will occur. In addition, the system described in Patent Document 1 uses a method of executing control for each branch path while referring to the flow rate ratio, so there is room for shortening the time required for branch control.

[0012] The technology according to the present disclosure has been made in consideration of the above circumstances, and appropriately controls the flow of gas supplied to a chamber. Hereinafter, a substrate processing system according to an embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0013] <Substrate processing system> A substrate processing system according to the present embodiment will be described. Fig. 1 is a plan view showing an outline of the configuration of the substrate processing system according to the present embodiment. In the substrate processing system, a process including a desired gas processing such as a film forming process, a cleaning process, or a plasma process is performed on a substrate W.

[0014] 1, the substrate processing system includes a substrate processing apparatus 1 and a control unit 2. The substrate processing apparatus 1 includes an atmospheric unit 10 and a decompression unit 11 that are integrally connected via load lock modules 20 and 21. The atmospheric unit 10 includes an atmospheric module that performs a desired process on a substrate W in an atmospheric pressure atmosphere. The decompression unit 11 includes a decompression module that performs a desired process on a substrate W in a decompression atmosphere.

[0015] The load lock modules 20 and 21 are provided to connect a loader module 30 (described later) in the atmospheric section 10 and a transfer module 50 (described later) in the decompression section 11 via gate valves 22 and 23, respectively. The load lock modules 20 and 21 are configured to temporarily hold a substrate W. Furthermore, the load lock modules 20 and 21 are configured so that the interior can be switched between an atmospheric pressure atmosphere and a decompression atmosphere (vacuum state).

[0016] The atmospheric section 10 has a loader module 30 equipped with a substrate transport mechanism 40 described below, and a load port 32 on which a FOUP 31 capable of storing a plurality of substrates W is placed. Note that the loader module 30 may be provided adjacent to it with an orienter module (not shown) for adjusting the horizontal orientation of the substrate W, a storage module (not shown) for storing a plurality of substrates W, and the like.

[0017] The loader module 30 is made up of a rectangular housing, and the inside of the housing is maintained at atmospheric pressure. A plurality of, for example, five load ports 32 are arranged side by side on one side constituting the long side of the housing of the loader module 30. The load lock modules 20 and 21 are arranged side by side on the other side constituting the long side of the housing of the loader module 30.

[0018] A substrate transport mechanism 40 for transporting the substrate W is provided inside the loader module 30. The substrate transport mechanism 40 has a transport arm 41 that moves while holding the substrate W, a rotating table 42 that rotatably supports the transport arm 41, and a rotating platform 43 on which the rotating table 42 is mounted. A guide rail 44 extending in the longitudinal direction of the loader module 30 is provided inside the loader module 30. The rotating platform 43 is provided on the guide rail 44, and the substrate transport mechanism 40 is configured to be movable along the guide rail 44.

[0019] The decompression section 11 has a transfer module 50 that transports the substrate W therein, and a chamber 60 that performs a desired process on the substrate W transported from the transfer module 50. The interiors of the transfer module 50 and the chamber 60 are each maintained in a decompressed atmosphere.

[0020] A plurality of chambers 60 are connected to one transfer module 50. In the example shown in Fig. 1, six chambers are connected, but the number is not limited to this, and fewer or more than six chambers may be connected.

[0021] The chambers 60 are provided adjacent to the transfer module 50 via respective gate valves 64. In the chambers 60, desired gas processes such as film formation processes, cleaning processes, and other plasma processes are performed depending on the purpose of the substrate processing.

[0022] The transfer module 50 is made of a rectangular housing and is connected to the load lock modules 20 and 21 as described above. The transfer module 50 transports the substrate W loaded into the load lock module 20 to one chamber 60, where the substrate W is subjected to a desired processing, and then transports the substrate W to the atmospheric section 10 via the load lock module 21.

[0023] A substrate transport mechanism 70 for transporting the substrate W is provided inside the transfer module 50. The substrate transport mechanism 70 has a transport arm 71 that holds and moves the substrate W, a rotating table 72 that rotatably supports the transport arm 71, and a rotating platform 73 on which the rotating table 72 is mounted. A guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the transfer module 50. The rotating platform 73 is provided on the guide rail 74, and the substrate transport mechanism 70 is configured to be movable along the guide rail 74.

[0024] Then, in the transfer module 50, the transport arm 71 receives the substrate W held in the load lock module 20 and transports it to the desired chamber 60. In addition, the transport arm 71 holds the substrate W that has been subjected to the desired processing in the chamber 60 and transports it out to the load lock module 21.

[0025] The decompression unit 11 is provided with a plurality of gas boxes 80 that supply gas to the chambers 60, for example, a plurality of gas boxes 80 corresponding to each chamber 60 in this embodiment, and a main gas unit 90 that houses a gas control unit that controls the supply of gas to each gas box 80. Each gas box 80 and the corresponding chamber 60 are connected by a supply flow path 82 that allows the flow of processing gas. The details of the supply flow path 82 will be described later. The number and arrangement of the gas boxes 80 are not limited to this embodiment. In the example shown in FIG. 1, six gas boxes 80 are provided corresponding to six chambers, but the present invention is not limited to this, and fewer than six or more than six gas boxes 80 may be provided.

[0026] Each gas box 80 is further connected to a flow measurement device 120 via a measurement flow path 110. The measurement flow path 110 and the flow measurement device 120 will be described below.

[0027] The control unit 2 processes computer-executable instructions that cause the substrate processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the substrate processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the substrate processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the substrate processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0028] Hereinafter, a process gas flow path and each component on the flow path in the substrate processing system according to the present embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram showing an outline of a process gas flow path and each component on the flow path in the substrate processing system according to the present embodiment.

[0029] As described above, the substrate processing system includes a plurality of chambers 60 including a first chamber 60a and a second chamber 60b. The substrate processing system also includes a plurality of gas boxes 80 including a first gas box 80a and a second gas box 80b. For convenience of explanation, the first chamber 60a and the second chamber 60b and the first gas box 80a and the second gas box 80b are described separately, but they have the same configuration and function. In this specification, when describing a common configuration and function, they may be collectively referred to simply as a chamber 60 or a gas box 80. Note that in FIG. 2, only the first chamber 60a and the second chamber 60b and the first gas box 80a and the second gas box 80b connected thereto are illustrated, and the other chambers 60 and the other gas boxes 80 are omitted. In addition, the flow paths and components connected to the other chambers 60 and the other gas boxes 80 are also omitted from the illustration. As used herein, the "upstream side" of a component refers to the gas source 140 side of the component, and the "downstream side" of a component refers to the exhaust device side of the component. In one embodiment, gas may flow from the "downstream side" of a component to the "upstream side" of the component.

[0030] <Main gas unit> 2, the main gas unit 90 is provided with gas sources 140 and flow controllers 141 for supplying one or more gases to each gas box 80. In one embodiment, the main gas unit 90 is configured to supply one or more gases from the corresponding gas sources 140 to the gas boxes 80 via the corresponding flow controllers 141. Each flow controller 141 may include, for example, a mass flow controller or a pressure-controlled flow controller.

[0031] <Gas box> The gas box 80 includes a number of flow controllers 142 and flow paths connecting them. For ease of explanation, the flow rate controller provided in the first gas box 80a is referred to as the first flow rate controller 142a, and the flow rate controller provided in the second gas box 80b is referred to as the second flow rate controller 142b, but these have the same configuration and function. In this specification, when describing a common configuration and function, the first flow rate controller 142a and the second flow rate controller 142b may be collectively referred to simply as the flow rate controller 142.

[0032] An upstream flow path 144 is connected to the gas source 140, with the gas source 140 being the most upstream side, and multiple flow rate controllers 142 are connected to the upstream flow path 144. A downstream flow path 146 is connected to the downstream side of the flow rate controller 142, and a chamber 60 and a flow rate measuring device 120 are connected downstream of the downstream flow path 146.

[0033] The flow rate controller 142 is provided with a primary valve 150 on the upstream side. In other words, the flow rate controller 142 is connected to the upstream flow path 144 via the primary valve 150. In addition, the flow rate controller is provided with a secondary valve 152 on the downstream side. In other words, the flow rate controller 142 is connected to the downstream flow path 146 via the secondary valve 152.

[0034] The number and arrangement of the flow rate controllers 142 in the gas box 80 are not limited to those in this embodiment. The flow rate controller 142 only needs to be configured to be able to measure and control the flow rate of the gas flowing therethrough. In one embodiment, a mass flow controller or a pressure control type flow rate controller 142 is used. The number and arrangement of the gas sources 140 are not limited to those in this embodiment. The gas sources 140 may be provided either inside or outside the main gas unit 90.

[0035] The downstream flow path 146 is connected to a supply flow path 82 on the chamber 60 side. The supply flow path 82 includes a first output valve 156. The downstream flow path 146 is connected to a measurement flow path 110 on the flow measurement device 120 side. The measurement flow path 110 includes a second output valve 162.

[0036] In the gas box 80 having the above configuration, when processing gas is supplied from one of the plurality of flow rate controllers 142 to the chamber 60, the first output valve 156 can be controlled to be opened and the second output valve 162 can be controlled to be closed. As a result, the processing gas is supplied to the chamber 60 through the connecting flow path 154, and is not supplied to the flow measurement device 120. Conversely, when processing gas is supplied to the flow measurement device 120, the second output valve 162 can be controlled to be opened and the first output valve 156 can be controlled to be closed. As a result, the processing gas is supplied to the flow measurement device 120 through the connecting flow path 160, and is not supplied to the chamber 60.

[0037] <Flow rate measuring device> The flow measurement device 120 includes a measurement flow path 110 and a measuring instrument 170 connected to the downstream side of the measurement flow path 110. The measurement flow path 110 includes a plurality of branch pipes 174 and a main pipe 178 to which the branch pipes 174 join. The plurality of branch pipes 174 are connected to the second output valves 162 in the gas boxes 80 on the upstream side, and the main pipe 178 is connected to the measuring instrument 170. In FIG. 2, the branch pipes 174 are also connected to the other gas boxes 80 not shown, but are omitted from the illustration as in the gas box 80. The number and arrangement of the branch pipes 174 are not limited to this embodiment. For example, when the number of gas boxes 80 is changed, the number of branch pipes 174 may be changed accordingly. In addition, when a plurality of flow paths and second output valves 162 on the flow measurement device 120 side are provided in the downstream flow path 146 of the gas box, the number of branch pipes 174 connected to each gas box may be changed accordingly.

[0038] The measuring device 170 is connected to a main pipe 178 via a primary valve 180 on the upstream side, and is connected to a calibration system 190 (described later) via a secondary valve 182 on the downstream side. The measuring device 170 includes pressure sensors 184 and 186 configured to measure the pressure inside the measuring device 170. The measuring device 170 also includes a temperature sensor 188 configured to measure the temperature inside the measuring device 170. The measuring device 170 is also configured to form a flow path inside and to pass a process gas through it. In other words, the inside of the measuring device 170 in which the pressure sensors 184 and 186 and the temperature sensor 188 are provided refers to the internal space of the measuring device 170, which is a region sandwiched between the primary valve 180 and the secondary valve 182 and forms a flow path for the process gas.

[0039] In one embodiment, a calibration system 190 is provided downstream of the flow measurement device 120. The calibration system 190 includes a reference flow path 192, a reference 194, and a reference valve 196. The reference flow path 192 is connected upstream to the measurement device secondary valve 182 and downstream to the exhaust device 130. A branch path 192a is provided in the reference flow path 192, and the reference 194 is connected to the branch path 192a via the reference valve 196.

[0040] <Diversion section and chamber> The supply flow passage 82 is connected to a diverter section 200 on the downstream side. For ease of explanation, the diverter section connected downstream of the first gas box 80a is referred to as the first diverter section 200a, and the diverter section connected downstream of the second gas box 80b is referred to as the second diverter section 200b, but these have the same configuration and function. In this specification, when explaining the common configuration and function, the first diverter section 200a and the second diverter section 200b may be collectively referred to simply as the diverter section 200.

[0041] The branching section 200 is connected to the branching paths 2021-2023 on the downstream side. For ease of explanation, the branching paths connected downstream of the first branching section 200a are referred to as the first branching paths 202a1-202a3, and the branching paths connected downstream of the second branching section 200b are referred to as the second branching paths 202b1-202b3, but these have similar configurations and functions. In this specification, when explaining the common configurations and functions, the first branching paths 202a1-202a3 and the second branching paths 202b1-202b3 may be collectively referred to simply as the branching paths 2021-2023.

[0042] In one embodiment, a plurality of each of the branch channels 2021 to 2023 are provided, and constitute gas inlets for introducing gas into the chamber 60. The number of lines of the branch channels is not limited to the example shown in the figure, and two or four or more lines may be provided.

[0043] In one embodiment, injection gas boxes 204, 206 are connected to the branch flow path 2022 and the branch flow path 2023. The injection gas boxes 204, 206 supply gas to the branch flow path 2022 and the branch flow path 2023 via a route different from that of the gas box 80. Each branch flow path is connected to the chamber 60 on the downstream side. Details of the branch section 200 and each of the branch flow paths 2021-2023 will be described later. The number of injection gas boxes and their connection destinations are not limited to the example shown in the figure, and may be any desired number and connection destinations.

[0044] <Exhaust system> The exhaust device is configured to exhaust the process gas downstream of the chamber 60 or the flow measurement device 120. An exhaust flow path 210 is provided downstream of each chamber 60, and an exhaust flow path 214 is provided downstream of the flow measurement device 120 via an exhaust device valve 212, and each exhaust flow path 210, 214 is connected to the exhaust device. In one embodiment, the exhaust device is a turbo molecular pump 216 provided downstream of the chamber 60 and / or a vacuum pump 218 provided in the exhaust flow paths 210, 214. The exhaust flow path 214 has a plurality of exhaust branch pipes 214a. A valve 220 and a valve 222 provided in the exhaust flow path 210 and the exhaust branch pipe 214a are configured to be controllable in accordance with the gas box 80 connected upstream of each of them. Specifically, when exhausting gas from one gas box 80 connected upstream of one exhaust flow path 210 and exhaust branch pipe 214a, the valves 220 and 222 in the exhaust flow path 210 and exhaust branch pipe 214a are opened, and the valves 220 and 222 in the other exhaust flow path 210 and exhaust branch pipe 214a are closed. This allows the process gas supplied from each gas box 80 to be individually exhausted. The exhaust flow paths 210 and 214 join downstream of the vacuum pump 218 and are connected to a detoxification device 224. The detoxification device 224 detoxifies the exhausted process gas. Note that in FIG. 2, the exhaust flow paths 210 are also connected downstream to other chambers 60 not shown, and some of these exhaust flow paths 210 are not shown.

[0045] <Diversion section> Hereinafter, the details of the flow dividing section 200 in the substrate processing system according to this embodiment will be described with reference to Figures 3 and 4. Figure 3 shows an outline of the configuration of the first flow dividing section 200a corresponding to the first gas box 80a and the first chamber 60a. Figure 4 shows an outline of the configuration of the second flow dividing section 200b corresponding to the second gas box 80b and the second chamber 60b. In Figures 3 and 4, solid arrows indicate flow paths through which gas flows, and the direction of the arrows indicates the direction of gas flow. Dotted arrows indicate paths of signals transmitted or received between the components, and the direction of the arrows indicates the transmission direction of the signals.

[0046] The branching section 200 branches the gas supplied from the gas box 80 via the supply flow path 82 to the branch paths 2021-2023 at a desired set flow rate ratio. Specifically, the branch paths 2021-2023 are provided with flow meters 3001-3003 and valves 3021-3023, respectively. For ease of explanation, the flow meters provided in the first branch paths 202a1-202a3 are referred to as first flow meters 300a1-300a3, and the flow meters provided in the second branch paths 202b1-202b3 are referred to as second flow meters 300b1-300b3, but these have similar configurations and functions. The valves provided in the first branch paths 202a1-202a3 are referred to as first valves 302a1-302a3, and the valves provided in the second branch paths 202b1-202b3 are referred to as second valves 302b1-302b3, but they have the same configuration and function. In this specification, when describing a common configuration and function, these may be collectively referred to simply as flow meters 3001-3003 or valves 3021-3023.

[0047] In one embodiment, the first branch channel 202a1 and the second branch channel 202b1 have corresponding configurations. The corresponding configurations refer to the case where one end on the downstream side of the branch channel 202 constitutes a gas inlet for the chamber 60, and the arrangement, diameter, number, etc. of the gas inlet are similar. Similarly, the other first branch channel 202a2 and the other second branch channel 202b2, and the further other first branch channel 202a3 and the other second branch channel 202b3 have corresponding configurations. Similarly, the flow meters 3001 to 3003 and the valves 3021 to 3023 included in these branch channels 202 each have a corresponding configuration. In one embodiment, the first branch path 202a1 and the second branch path 202b1 form an edge portion of the gas inlet, the other first branch path 202a2 and the other second branch path 202b2 form a middle portion of the gas inlet, and the other first branch path 202a3 and the other second branch path 202b3 form a center portion of the gas inlet.

[0048] The valves 3021 to 3023 are connected to the driving units 3041 to 3043. The driving units 3041 to 3043 are connected to the controllers 3061 to 3063. The controllers 3061 to 3063 control the driving units 3041 to 3043 so as to drive the valves 3021 to 3023 until they reach the desired opening degrees.

[0049] The controllers 3061 to 3063 receive a set flow rate ratio signal from the branch section control section 310, or receive a measured branch flow rate signal measured by the flowmeters 3001 to 3003. In one embodiment, the set flow rate ratio signal includes information on set flow rate ratios R1, R2, and R3, which will be described later. The measured branch flow rate signal includes a value QM of the measured branch flow rate flowing through each of the branch paths 2021 to 2023, which will be described later. 11 , Q.M. 21 , Q.M. 31 and QM 41 and Q.M. 12 , Q.M. 22 , Q.M. 32 and QM 42 and Q.M. 13 , Q.M. 23 , Q.M. 33 and QM 43 Includes information on:

[0050] The flow rate of the gas supplied from the gas box 80 is controlled by the flow rate controller 142 upon receiving a set flow rate signal from the control unit 2. The flow rate controller 142 is configured to measure the flow rate of the gas flowing therein and transmit the measured flow rate to the control unit 2. The set flow rate signal from the control unit 2 is expressed by flow rate values ​​Q and QS, which will be described later. 11 , Q.S. 12 and QS 13 And, Q.S. 31 , Q.S. 32 and QS 33 The signal sent from the flow rate controller 142 to the control unit 2 includes the set flow rate value QS 21 , Q.S. 22 and QS 23 And, Q.S. 41 , Q.S. 42 and QS 43 Includes information on:

[0051] In one embodiment, a thermal mass flow sensor (MFM) is used as the flow meters 3001 to 3003. In another embodiment, a cam-type motorized valve is used as the valves 3021 to 3023.

[0052] In one embodiment, the diversion section control section 310 includes a PID constant adjustment mechanism, and PID control information is stored in advance in each of the controllers 3061-3063. In this case, in the diversion section 200, the openings of the valves 3021-3023 are controlled based on the set flow rate ratios (R1-R3) in a valve opening control mode, and then the openings of the valves 3021-3023 are feedback-controlled by a PID control method in a diversion flow rate control mode, and the drive sections 3041-3043 are operated so as to achieve a desired diversion flow rate.

[0053] The substrate processing system having the above configuration can perform a substrate processing method MT according to the present embodiment, which will be described later. Also, a desired conventional flow rate ratio control method can be performed so that gas is diverted to a plurality of branch paths at a desired flow rate ratio, and as an example, the method described in Patent Document 1 can be performed.

[0054] <Substrate processing method> Next, a substrate processing method MT according to this embodiment will be described with reference to Fig. 5. Fig. 5 is a flow chart showing an outline of the substrate processing method MT according to this embodiment.

[0055] Prior to the substrate processing method MT according to this embodiment, the flow rate controller 142 included in the gas box 80 is calibrated using the flow rate measuring device 120. That is, the multiple flow rate controllers 142 are calibrated so that the flow rates of the gas flowing therethrough are the same for the same set flow rate command signal. In other words, the calibration sufficiently reduces instrumental errors that may occur between the multiple flow rate controllers 142. As a result, when the multiple gas boxes 80 receive a set flow rate command signal to supply gas at a desired flow rate, the gases supplied from these multiple gas boxes 80 can be controlled to the same flow rate. The calibration of the multiple flow rate controllers 142 is performed, for example, based on flow rate measurement by a build-up method using the flow rate measuring device 120.

[0056] Furthermore, prior to the substrate processing method MT according to the present embodiment, a process recipe for performing a desired substrate processing in the first chamber 60a is established with the multiple flow rate controllers 142 calibrated. The process recipe includes a first set flow rate ratio R1. As an example, a process is performed on the substrate W using the first gas box 80a, the first branch section 200a, the first branch paths 202a1-202a3, and the first chamber 60a. At this time, the first set flow rate ratio R1 is determined and recorded so that the substrate processing in the first chamber 60a becomes a desired one. The control of the flow rate ratio of the gases supplied to the first chamber 60a and the determination and recording of the first set flow rate ratio R1 may be performed by executing a desired conventional method. In the first chamber 60a, a desired substrate processing is performed by using a process recipe including the first set flow rate ratio R1. Note that the first set flow rate ratio R1 is not limited to that determined by the above method, and may be determined and recorded using another desired method.

[0057] Incidentally, the flowmeters 3001-3003 according to the present embodiment may have an instrumental error. As an example of the instrumental error, the value of a flow rate of a gas passing through the first branch path 202a1 and measured by the first flowmeter 300a1 may differ from the value of a flow rate of a gas passing through the second branch path 202b1 and measured by the second flowmeter 300b1. Therefore, when a process recipe established in the first chamber 60a is applied to the second chamber 60b, gas may be supplied to the second chamber 60b at different branch flow rates (flow rate ratios) due to the instrumental error between the first flowmeters 300a1-300a3 and the second flowmeters 300b1-300b3.

[0058] In view of the above, in the substrate processing method MT according to the present embodiment, a process recipe established to perform a desired substrate processing in the first chamber 60a is optimized so that a similar substrate processing can be performed in the second chamber 60b.

[0059] In step ST10, gas is supplied from the first gas box 80a to the first branch paths 202a1-202a3 at a total flow rate Q, and the gas is branched so that the ratio of the branch flow rate of one first branch path 202a1 to the branch flow rate of the other first branch path 202a2 to the branch flow rate of the further other first branch path 202a3 is a first set flow rate ratio R1. Specifically, by performing the method described in Patent Document 1, the flow rates of the first branch paths 202a1-202a3 can be set to flow rate values ​​based on the first set flow rate ratio R1. At this time, the flow rates measured by each of the first flow meters 300a1-300a3 are set to a first measured branch flow rate QM 11 ~QM 13 and the opening degree of each of the first valves 302a1 to 302a3 is recorded as the first opening degree VA 11 ~VA 13 Then, the supply of gas from the first gas box 80a is stopped.

[0060] In step ST12, the first valve 302a1 is opened to a first opening degree VA 11In the other first branch paths 202a2 and 202a3, the first valves 302a2 and 302a3 are closed.

[0061] In step ST14, gas is supplied from the first gas box 80a to the first branch path 202a1 in which the first valve 302a1 has been opened in step ST12. The flow rate of the gas supplied from the first gas box 80a is a first set branch flow rate QS calculated based on the total flow rate Q in step ST12 and the first set flow rate ratio R1. 11 As an example, the first set flow rate ratio R1 is set to (r1:r2:r3). In other words, the ratio between the diverted flow rate of one first branch path 202a1, the diverted flow rate of another first branch path 202a2, and the diverted flow rate of yet another first branch path 202a3 is set to (r1:r2:r3). In this case, the first set diverted flow rate QS 11 is calculated as Q×r1 / (r1+r2+r3). The flow rate of the gas supplied from the first gas box 80a in step ST14 is controlled by the first flow rate controller 142a. At this time, the flow rate measured by the first flow meter 300a1 is referred to as the second measured divided flow rate QM 21 Record as.

[0062] In step ST16, gas is supplied from the first gas box 80a, continuing from step ST14. 11 and the second measured divided flow rate QM recorded in step ST14 21 If these values ​​are different, the second measured flow QM 21 is the first measured flow rate QM 11 The flow rate of the gas supplied from the first gas box 80a in step ST16 is controlled by the first flow rate controller 142a. As an example, in step ST16, continuing from step ST14, gas is supplied from the first gas box 80a and the second measured divided flow rate QM 21 The second measurement flow QM 21 is the first measured flow rate QM 11The first flow rate controller 142a is feedback-controlled so that the second measured divided flow rate QM 21 and the first measured flow rate QM 11 The comparison with the second measured divided flow rate QM may be performed by calculating the difference therebetween or the ratio therebetween. In addition, in the feedback control, the first flow rate controller 142a may be controlled so that the difference, the absolute value of the difference, or the ratio is equal to or less than a desired threshold value or equal to or greater than a desired threshold value. 21 is the first measured flow rate QM 11 When the flow rate in the first flow controller 142a can be considered to be sufficiently close to the second set divided flow rate QS 21 Then, the supply of gas from the first gas box 80a is stopped.

[0063] In step ST18, steps ST12 to ST16 are executed in the other first branch path 202a2 in which the first valve 302a2 is closed in step ST12, and in the further first branch path 202a3 in which the first valve 302a3 is closed. That is, in step ST12, in the other first branch path 202a2, the first valve 302a2 is opened at the first opening degree VA 12 In step ST14, the first set divided flow rate QS 12 is calculated as Q×r2 / (r1+r2+r3), and the flow rate measured by the first flow meter 300a2 is determined as the second measured divided flow rate QM 22 In step ST16, the first measured flow rate QM 12 and the second measured flow rate QM 22 When these values ​​can be considered to be sufficiently close, the flow rate in the first flow rate controller 142a is set to the second set divided flow rate QS 22 In addition, in the still another first branch path 202a3, the first valve 302a3 is opened at the first opening degree VA 13 In step ST14, the first set divided flow rate QS 13 is calculated as Q×r3 / (r1+r2+r3), and the flow rate measured by the first flow meter 300a3 is determined as the second measured divided flow rate QM 23In step ST16, the first measured flow rate QM 13 and the second measured flow rate QM 23 When these values ​​can be considered to be sufficiently close, the flow rate in the first flow rate controller 142a is set to the second set divided flow rate QS 23 Record as.

[0064] In step ST20, the second set divided flow rate QS recorded in steps ST16 and ST18 is 21 ~QS 23 As an example, the second set flow ratio R2 is calculated based on (QS 21 :QS 22 :QS 23 For ease of explanation, the calculated second set flow ratio R2 will be hereinafter assumed to be (r4:r5:r6).

[0065] According to steps ST10 to ST20, when gas is diverted to the first branch paths 202a1-202a3 based on the first set flow rate ratio R1, the diverted flow rates flowing through the first branch paths 202a1-202a3 and their ratio (second set flow rate ratio R2) can be determined by the calibrated first flow rate controller 142a.

[0066] In step ST22, gas is supplied from the second gas box 80b to the second branch paths 202b1-202b3 at a total flow rate Q, and the flows are branched so that the ratio of the branch flow rate of one second branch path 202b1 to the branch flow rate of the other second branch path 202b2 to the branch flow rate of the further other second branch path 202b3 is a second set flow rate ratio R2. Specifically, by executing the method described in Patent Document 1, the flow rates of the second branch paths 202b1-202b3 can be set to flow rate values ​​based on the second set flow rate ratio R2. At this time, the flow rates measured by each of the second flow meters 300b1-300b3 are set to a third measured branch flow rate QM 31 ~QM 33 and the opening degree of each of the second valves 302b1 to 302b3 is recorded as the second opening degree VA 21 ~VA 23 Then, the supply of gas from the second gas box 80b is stopped.

[0067] In step ST24, the second valve 302b1 is opened at a second opening degree VA 21 In the other second branch paths 202b2 and 202b3, the second valves 302b2 and 302b3 are closed.

[0068] In step ST26, gas is supplied from the second gas box 80b to the second branch passage 202b1 in which the second valve 302b1 has been opened in step ST24. The flow rate of the gas supplied from the second gas box 80b is a third set branch flow rate QS calculated based on the total flow rate Q in step ST22 and the second set flow rate ratio R2. 31 In this case, the third set flow rate QS 31 In step ST26, the third set divided flow rate QS 31 The flow rate of the gas supplied from the second gas box 80b is controlled by the second flow rate controller 142b based on the flow rate measured by the second flow meter 300b1. 41 Record as.

[0069] In step ST28, gas is supplied from the second gas box 80b, continuing from step ST26. 31 and the fourth measured fractional flow rate QM recorded in step ST26 41 If these values ​​are different, the fourth measured flow fraction QM 41 is the third measured flow rate QM 31 The flow rate of the gas supplied from the second gas box 80b in step ST28 is controlled by the second flow rate controller 142b. As an example, in step ST28, the fourth measured divided flow rate QM 41 The fourth measurement flow QM 41 is the third measured flow rate QM 31 The second flow rate controller 142b is feedback-controlled so that the fourth measured divided flow rate QM41 and the third measured flow rate QM 31 The comparison with the fourth measured divided flow rate QM may be performed by calculating the difference therebetween or the ratio therebetween. In addition, in the feedback control, the second flow rate controller 142b may be controlled so that the difference, the absolute value of the difference, or the ratio is equal to or less than a desired threshold value or equal to or greater than a desired threshold value. 41 is the third measured flow rate QM 31 When the flow rate in the second flow controller 142b can be considered to be sufficiently close to the fourth set distribution flow rate QS 41 Then, the supply of gas from the second gas box 80b is stopped.

[0070] In step ST30, steps ST24 to ST28 are executed in the other second branch path 202b2 in which the second valve 302b2 is closed in step ST24, and in the further second branch path 202b3 in which the second valve 302b3 is closed. That is, in step ST24, in the other second branch path 202b2, the second valve 302b2 is opened at the second opening degree VA 22 In step ST26, the third preset divided flow rate QS 32 is calculated as Q×r5 / (r4+r5+r6), and the flow rate measured by the second flow meter 300b2 is determined as the fourth measured divided flow rate QM 42 In step ST28, the third measured flow rate QM 32 and the fourth measured flow rate QM 42 When these values ​​can be considered to be sufficiently close, the flow rate in the second flow rate controller 142b is set to the fourth set divided flow rate QS 42 In addition, in the second branch path 202b3, the second valve 302b3 is opened at a second opening degree VA 23 In step ST26, the third preset divided flow rate QS 33 is calculated as Q×r6 / (r4+r5+r6), and the flow rate measured by the second flow meter 300b3 is determined as the fourth measured divided flow rate QM 43 In step ST28, the third measured flow rate QM 33 and the fourth measured flow rate QM43 When these values ​​can be considered to be sufficiently close, the flow rate in the second flow rate controller 142b is set to the fourth set divided flow rate QS 43 Record as.

[0071] In step ST32, the fourth set divided flow rate QS recorded in steps ST28 and ST30 is 41 ~QS 43 As an example, the third set flow ratio R3 is calculated based on (QS 41 :QS 42 :QS 43 ).

[0072] In step ST34, the third set flow ratio R3 calculated in step ST32 is compared with the second set flow ratio R2 calculated in step ST20. If these ratios are different, the process returns to step ST22. In this case, in step ST22, the currently calculated third set flow ratio R3 is substituted for the second set flow ratio R2, and the subsequent steps ST24 to ST32 are executed. If the third set flow ratio R3 and the second set flow ratio R2 are sufficiently close to each other, the process ends.

[0073] According to steps ST22 to ST34, when gas is diverted to the second branch paths 202b1 to 202b3 based on the second set flow rate ratio R2, the diverted flow rates flowing through the second branch paths 202b1 to 202b3 and their ratio (third set flow rate ratio R3) can be determined by the calibrated second flow rate controller 142b.

[0074] According to steps ST10 to ST34, the second set flow ratio R2 specified by the calibrated first flow controller 142a and the third set flow ratio R3 specified by the calibrated second flow controller 142b can be set to the same ratio. This allows the process recipe established to perform a desired substrate processing in the first chamber 60a to be optimized so that the same substrate processing can be performed in the second chamber 60b without being affected by the instrument error of the flow meters 3001 to 3003. In addition, the third set flow ratio R3 may be recorded, and when the first set flow ratio R1 is input to the second branch section 200b, a process of regarding the third set flow ratio R3 as having been input may be performed. This allows optimal flow control to be performed for each of the other chambers 60 including the second chamber 60b (each of the other gas boxes 80) for the process recipe (set flow ratio R1) established in the first chamber 60a.

[0075] In steps ST10 to ST34, the sufficiently close values ​​or sufficiently close ratios can be determined as follows, for example. That is, the values ​​or ratios are considered to be sufficiently close when the difference in values ​​(ratio difference) is within the instrumental error of the output flow rate values ​​from the flow rate controller 142 after calibration using the flow measurement device 120. In this case, the threshold value for comparing the two values ​​or ratios may be the value of the instrumental error of the output flow rate values ​​from the flow rate controller 142 after calibration.

[0076] In one embodiment, after steps ST10 to ST34 are performed, the following step ST40 is further performed. Then, a process for the substrate W is started in the chamber 60. Furthermore, when the process is performed, the following steps ST42, ST44 or steps ST46, ST48 are performed. This shortens the response time during gas diversion control in the diversion section 200. Steps ST40 to ST48 will be described below with reference to Figs. 5 to 7.

[0077] FIG. 5 is a flow chart showing an outline of the substrate processing method MT when step ST40 is performed.

[0078] In step ST40, the first opening degree VA recorded in steps ST12 to ST18 is 11 ~VA 13 and the second measured flow rate QM 21 ~QM 23 are recorded in the branch section control section 310 in the first branch section 200a as parameters unique to each of the first valves 302a1 to 302a3 and the first flow meters 300a1 to 300a3. In addition, the second opening degrees VA 21 ~VA 23 and the fourth measured flow rate QM 41 ~QM 43 are recorded in the branch section control section 310 in the second branch section 200b as parameters unique to each of the second valves 302b1-302b3 and the second flow meters 300b1-300b3.

[0079] FIG. 6 is a flow chart showing an outline of a substrate processing method MT in which steps ST42 and ST44 are performed when a process is performed on a substrate W in the first chamber 60a.

[0080] In step ST42, a process for the substrate W is started in the first chamber 60a. At this time, the supply of gas from the first gas box 80a is started, and a first set flow rate ratio R1 (r1:r2:r3) based on the process recipe is input to the diversion section control section 310 in the first diversion section 200a. The diversion section control section 310 sets the opening degree of one first valve 302a1 as a first opening degree VA recorded as the inherent parameter. 11 Similarly, the opening degree of the other first valve 302a2 is controlled to be the first opening degree VA 12 The opening degree of the other first valve 302a3 is set to a first opening degree VA 13 respectively.

[0081] In step ST44, the flow rate values ​​measured by the first flow meters 300a1 to 300a3 are calculated based on the second measured divided flow rate QM 21 ~QM 23The feedback control of the valve opening is performed until the valve openings become sufficiently close to the values ​​of the valve openings and the substrate W is then processed and then terminated.

[0082] FIG. 7 is a flow chart showing an outline of the substrate processing method MT in the case where steps ST46 and ST48 are performed when a process is performed on a substrate W in the second chamber 60b.

[0083] In step ST46, a process for the substrate W is started in the second chamber 60b. At this time, gas supply is started from the second gas box 80b, and a first set flow rate ratio R1 (r1:r2:r3) based on the process recipe is input to the diversion section control section 310 in the second diversion section 200b. The diversion section control section 310 to which the first set flow rate ratio R1 is input controls the third set flow rate ratio R3 (QS 41 :QS 42 :QS 43 ) is input, and the opening degree of one second valve 302b1 is recorded as the second opening degree VA 21 Similarly, the opening degree of the other second valve 302b2 is controlled to be the second opening degree VA 22 The opening degree of the other second valve 302b3 is set to a second opening degree VA 23 respectively.

[0084] In step ST48, the flow rate values ​​measured by the second flow meters 300b1 to 300b3 are calculated based on the fourth measured divided flow rate QM 41 ~QM 43 The feedback control of the valve opening is performed until the valve openings become sufficiently close to the values ​​of the valve openings and the substrate W is then processed and then terminated.

[0085] According to steps ST40, ST42, ST44, and ST46 and ST48, the first opening degree VA already recorded in steps ST12 to ST18 and steps ST24 to ST30 is 11 ~VA 13 and the second measured flow rate QM 21 ~QM23 By using this, when a process is performed on the substrate W in each chamber 60, the response time of the diversion control in each diversion section 200 can be shortened.

[0086] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above embodiments may be omitted, substituted, or modified in various forms without departing from the scope of the appended claims, the configuration examples belonging to the technical scope of the present disclosure described below, and the gist thereof. For example, the components of the above embodiments may be arbitrarily combined. From such an arbitrary combination, the actions and effects of each of the components related to the combination can be obtained as a matter of course, and other actions and effects that are obvious to a person skilled in the art from the description of this specification can be obtained.

[0087] In addition, the effects described in this specification are merely explanatory or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification in addition to or in place of the above effects. [Explanation of symbols]

[0088] QM 11 ~QM 13 First measured flow rate QM 21 ~QM 23 Second measured flow rate QM 31 ~QM 33 Third measured flow rate QM 41 ~QM 43 Fourth measured fraction QS 11 ~QS 13 First set flow rate QS 21 ~QS 23 Second set flow rate QS 31 ~QS 33 Third set flow rate QS 41 ~QS 43 4th set flow rate R1 First set flow rate R2 Second set flow rate R3 Third set flow ratio VA 11 ~VA 13 First opening VA 21 ~VA 23 Second opening 60a First Chamber 60b Second Chamber 80a First gas box 80b Second Gas Box 142 Flow Controller 202a1-202a3 First branch path 202b1~202b3 Second branch path 302a1~302a3 First valve 302b1~302b3 Second valve

Claims

1. A first chamber; a first gas box including a first flow controller for supplying gas to the first chamber via a plurality of first branch passages; a first flow meter and a first valve provided in each of the plurality of first branch paths; A second chamber; and a second gas box including a second flow controller for supplying gas to the second chamber via a plurality of second branch paths; a second flow meter and a second valve provided in each of the plurality of second branch paths; A control unit, The control unit is (a) recording a flow rate measured by each of the first flow meters as a first measured divided flow rate and an aperture of each of the first valves as a first aperture when the gas supplied from the first gas box is divided into the first divided flow path by controlling an aperture of each of the first valves so as to obtain a first set flow rate ratio; (b) controlling and opening the first valve to the first opening degree in one of the first branch paths, and closing the first valve in all other first branch paths; (c) calculating a first set divided flow rate based on the first set flow rate ratio in the first divided flow path in which the first valve is opened in the step (b), and recording a flow rate measured by the first flow meter when the gas is supplied under control by the first flow controller so as to be the first set divided flow rate as a second measured divided flow rate; (d) calculating a flow rate difference between the first measured divided flow rate and the second measured divided flow rate, and recording the flow rate in the first flow controller as a second set divided flow rate when the gas is supplied while being controlled by the first flow controller so as to eliminate the flow rate difference; (e) performing the steps (b) to (d) for all of the other first branch paths in which the first valves have been closed in the step (b), based on the first openings of the respective first branch paths, and recording second set branch flow rates for the respective first branch paths; (f) calculating a second set flow ratio based on the second set divided flow rates recorded in the (d) and (e) steps; (g) recording a flow rate measured by each of the second flow meters as a third measured divided flow rate and a degree of opening of each of the second valves as a second degree of opening when the gas is supplied through the second branch path by controlling the degree of opening of each of the second valves so as to achieve the second set flow rate ratio; (h) controlling and opening the second valve to the second opening degree in one of the second branch paths, and closing the second valves in all other second branch paths; (i) calculating a second set divided flow rate based on the second set flow rate ratio in the second divided flow path in which the second valve has been opened in the step (h), and recording a flow rate measured by the second flow meter when the gas is supplied under control by the second flow controller so as to be the second set divided flow rate as a fourth measured divided flow rate; (j) calculating a flow rate difference between the third measured divided flow rate and the fourth measured divided flow rate, and recording the flow rate in the second flow controller as a third set divided flow rate when the gas is supplied under control by the second flow controller so as to eliminate the flow rate difference; (k) performing the steps (i) and (j) for all of the other first branch paths for which the first valves have been closed in the step (h) based on the first opening degrees of each of the first branch paths, and recording a third set branch flow rate for each of the first branch paths; (l) calculating a third set flow ratio based on the third set divided flow rates recorded in the (d) and (e) steps; The substrate processing apparatus performs the above steps.

2. The control unit is (m) recording the first valve position and the second measured divided flow rate as parameters specific to the first valve and the first flow meter, respectively; (n) controlling apertures of the first valves to the first apertures recorded as the inherent parameters when starting a process for a substrate in the first chamber and supplying the gas from the first gas box; (p) controlling the opening of the first valve until the flow rate measured by each of the first flow meters becomes the second measured divided flow rate recorded as the unique parameter; The substrate processing apparatus according to claim 1 , further comprising:

3. The control unit is (q) recording the second valve position and the fourth measured divided flow rate as parameters specific to the second valve and the second flow meter, respectively; (r) controlling apertures of the second valves to the second apertures recorded as the inherent parameters when starting a process for a substrate in the second chamber and supplying the gas from the second gas box; (s) controlling the opening of the second valve until the flow rate measured by each of the second flow meters becomes the fourth measured divided flow rate recorded as the unique parameter; The substrate processing apparatus according to claim 1 , further comprising:

4. A substrate processing method using a substrate processing apparatus, comprising: The substrate processing apparatus includes: A first chamber; a first gas box including a first flow controller for supplying gas to the first chamber via a plurality of first branch passages; a first flow meter and a first valve provided in each of the plurality of first branch paths; A second chamber; and a second gas box including a second flow controller for supplying gas to the second chamber via a plurality of second branch paths; a second flow meter and a second valve provided in each of the plurality of second branch paths; Equipped with The substrate processing method includes: (a) recording a flow rate measured by each of the first flow meters as a first measured divided flow rate and an aperture of each of the first valves as a first aperture when the gas supplied from the first gas box is divided into the first divided flow path by controlling an aperture of each of the first valves so as to obtain a first set flow rate ratio; (b) controlling and opening the first valve to the first opening degree in one of the first branch paths, and closing the first valve in all other first branch paths; (c) calculating a first set divided flow rate based on the first set flow rate ratio in the first divided flow path in which the first valve is opened in the step (b), and recording a flow rate measured by the first flow meter when the gas is supplied under control by the first flow controller so as to be the first set divided flow rate as a second measured divided flow rate; (d) calculating a flow rate difference between the first measured divided flow rate and the second measured divided flow rate, and recording the flow rate in the first flow controller as a second set divided flow rate when the gas is supplied while being controlled by the first flow controller so as to eliminate the flow rate difference; (e) performing the steps (b) to (d) for all of the other first branch paths in which the first valves have been closed in the step (b), based on the first openings of the respective first branch paths, and recording second set branch flow rates for the respective first branch paths; (f) calculating a second set flow ratio based on the second set divided flow rates recorded in the (d) and (e) steps; (g) recording a flow rate measured by each of the second flow meters as a third measured divided flow rate and a degree of opening of each of the second valves as a second degree of opening when the gas is supplied through the second branch path by controlling the degree of opening of each of the second valves so as to achieve the second set flow rate ratio; (h) controlling and opening the second valve to the second opening degree in one of the second branch paths, and closing the second valves in all other second branch paths; (i) calculating a second set divided flow rate based on the second set flow rate ratio in the second divided flow path in which the second valve has been opened in the step (h), and recording a flow rate measured by the second flow meter when the gas is supplied under control by the second flow controller so as to be the second set divided flow rate as a fourth measured divided flow rate; (j) calculating a flow rate difference between the third measured divided flow rate and the fourth measured divided flow rate, and recording the flow rate in the second flow controller as a third set divided flow rate when the gas is supplied under control by the second flow controller so as to eliminate the flow rate difference; (k) performing the steps (i) and (j) for all of the other first branch paths for which the first valves have been closed in the step (h) based on the first opening degrees of each of the first branch paths, and recording a third set branch flow rate for each of the first branch paths; (l) calculating a third set flow ratio based on the third set divided flow rates recorded in the (d) and (e) steps; A method for processing a substrate, comprising:

5. (m) recording the first valve position and the second measured divided flow rate as parameters specific to the first valve and the first flow meter, respectively; (n) controlling apertures of the first valves to the first apertures recorded as the inherent parameters when starting a process for a substrate in the first chamber and supplying the gas from the first gas box; (p) controlling the opening of the first valve until the flow rate measured by each of the first flow meters becomes the second measured divided flow rate recorded as the unique parameter; The method of claim 4 , further comprising:

6. (q) recording the second valve position and the fourth measured divided flow rate as parameters specific to the second valve and the second flow meter, respectively; (r) controlling apertures of the second valves to the second apertures recorded as the inherent parameters when starting a process for a substrate in the second chamber and supplying the gas from the second gas box; (s) controlling the opening of the second valve until the flow rate measured by each of the second flow meters becomes the fourth measured divided flow rate recorded as the unique parameter; The method of claim 4 or 5, further comprising:

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