Treatment agent for epoxy-based insulation material
A processing agent with a specific HSP value effectively removes epoxy-based insulating materials, addressing the challenge of efficient processing in semiconductor manufacturing by improving penetration and dispersibility.
Patent Information
- Application Number
- JP2023112270
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-07-07
- Publication Date
- 2025-01-20
AI Technical Summary
The increasing density and performance of semiconductor packages require efficient processing agents for epoxy-based insulating materials, particularly uncured layers, to facilitate easy removal and improve manufacturing efficiency.
A processing agent using an organic solvent with a specific Hansen solubility parameter (HSP) value of 10 MPa centered at δD=17.0, δP=9.0, δH=7.5, which enhances the removal processability of epoxy-based insulating materials by penetrating and dispersing them effectively.
The agent provides excellent removal processability for epoxy-based insulating materials, enabling high-quality semiconductor element circuits by improving penetration and dispersibility, thus enhancing manufacturing efficiency.
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Abstract
Description
[Technical field]
[0001] The present disclosure relates to a treatment agent for epoxy insulating materials and a treatment method using the same. [Background technology]
[0002] 2. Description of the Related Art In recent years, personal computers and various electronic devices have become more compact, with lower power consumption and faster processing speeds, and the wiring on package substrates and the like mounted on these devices has become finer every year. Until now, the metal mask method has been mainly used to form such fine wiring and connection terminals such as pillars and bumps, but due to its low versatility and the difficulty of responding to the miniaturization of wiring, etc., other new methods are being used. One of the new methods is to use a dry film resist as a thick resin mask instead of a metal mask. This resin mask is finally peeled off and removed, and an alkaline stripping cleaner is used for this purpose.
[0003] A semiconductor element can be obtained by applying a resist onto a semiconductor substrate, forming a pattern by exposure and development, then using the resist pattern as a mask to etch the unmasked areas of the semiconductor substrate to form a fine circuit, and then peeling the photoresist off of the semiconductor substrate, or by forming a fine circuit in a similar manner and then peeling off the remaining resist residue from the semiconductor substrate by ashing. For example, Patent Document 1 proposes a substrate processing method for processing an organic film pattern (resist pattern). The document (claim 55, etc.) describes that the organic film pattern after heat treatment is dissolved and transformed using an organic solution containing at least one selected from alcohols, ethers, esters, ketones, and glycol ethers. Patent Document 2 proposes a pattern formation method using a resist containing polysilane. The same document (claim 10, etc.) describes that an organosilicon compound film after heat treatment is dissolved and removed with an organic solvent. Patent Document 3 proposes a method for forming an insulating film pattern by exposing and developing a photosensitive resin containing a non-photosensitive polyimide precursor, an acrylic monomer, and a photoinitiator. The same document (claim 2, etc.) describes that a developer containing N-methyl-2-pyrrolidone or the like is used for development. [Prior art documents] [Patent documents]
[0004] [Patent Document 1] JP 2008-72059 A [Patent Document 2] Japanese Patent Application Publication No. 9-15864 [Patent Document 3] Japanese Patent Application Publication No. 7-84373 Summary of the Invention [Problem to be solved by the invention]
[0005] As semiconductor packages become denser and more highly functional, multilayer boards in which insulating layers and metal layers are alternately stacked on a substrate are increasingly being used. In the manufacturing process of multilayer boards, uncured (pre-cured) insulating layers may be processed. Since multilayer boards contain multiple insulating layers, a processing agent that makes it easy to process the insulating layers is desired. In addition, epoxy-based insulating materials have come to be used in insulating layers in recent years, and there is a demand for a processing agent that can efficiently remove and easily process epoxy-based insulating materials, in particular, a processing agent that has excellent processability for removing uncured (pre-cured) epoxy-based insulating materials.
[0006] Therefore, the present disclosure provides a treatment agent that has excellent removal processability for epoxy insulating materials. [Means for solving the problem]
[0007] In one embodiment, the present disclosure provides a method for preparing a solvent containing an organic solvent (component A), the Hansen solubility parameter values (HSP values) of which are δD=17.0, δP=9.0, and δH=7.5 within a radius of 10 MPa. 0.5The present invention relates to a treatment agent for epoxy-based insulating materials, which is within the scope of the above-mentioned sphere.
[0008] In one aspect, the present disclosure relates to a treatment method comprising removing and / or processing at least a portion of an epoxy-based insulating material from a substrate having the epoxy-based insulating material using a treatment agent of the present disclosure, the treatment method comprising contacting a substrate having the epoxy-based insulating material with the treatment agent of the present disclosure. Effect of the Invention
[0009] According to the present disclosure, a treatment agent having excellent removal processability for epoxy insulating materials can be provided. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0010] The present disclosure is based on the finding that by using an organic solvent having a specific HSP value, epoxy-based insulating material on a substrate can be efficiently removed, making it easier to process the epoxy-based insulating material.
[0011] In one embodiment, the present disclosure provides a method for preparing a solvent containing an organic solvent (component A), the Hansen solubility parameter values (HSP values) of which are δD=17.0, δP=9.0, and δH=7.5 within a radius of 10 MPa. 0.5 The present invention relates to a treatment agent for epoxy-based insulating materials (hereinafter also referred to as "the treatment agent of the present disclosure") that falls within the scope of the above sphere. In the present disclosure, the treatment of an epoxy-based insulating material includes improving the ease of removal and / or processing of an epoxy-based insulating material, preferably an uncured (pre-cured) epoxy-based insulating material. In the present disclosure, the epoxy-based insulating material to be treated is an uncured (pre-cured) epoxy-based insulating material in one or more embodiments.
[0012] According to the present disclosure, a treatment agent having excellent removal processability for epoxy insulating materials can be provided. Furthermore, the use of the treatment agent of the present disclosure enables the manufacture of high-quality semiconductor element circuits.
[0013] Although the details of the mechanism of action by which the effects of the present disclosure are expressed are unclear, it is presumed as follows. In the present disclosure, it is believed that an organic solvent (component A) having a specific HSP value penetrates into an epoxy insulating material, suppressing diffuse reflection on the surface and inside, and making the material transparent. When an organic solvent (component A) having a specific HSP value penetrates into an epoxy insulating material, the material becomes easily dispersible by mechanical force such as ultrasonic irradiation, and the removal processability of the epoxy insulating material is improved. In addition, the penetration of the organic solvent (component A) into an epoxy insulating material before curing is more favorable than that of an epoxy insulating material after curing, and the dispersion and removal processability by mechanical force are thought to be higher. However, the present disclosure need not be construed as being limited to this mechanism.
[0014] [Component A: organic solvent] The treatment agent of the present disclosure contains an organic solvent (hereinafter also referred to as "Component A"). Component A may be one type, or a combination of two or more types (mixed organic solvent).
[0015] The Hansen solubility parameter value (HSP value) of component A is δD = 17.0, δP = 9.0, δH = 7.5, with a radius of 10 MPa. 0.5 The HSP value of component A is preferably within a radius of 5 MPa, with δD=17.0, δP=9.0, and δH=7.5 as the center, from the viewpoint of improving the permeability into epoxy insulating materials and improving the removal processability of epoxy insulating materials. 0.5 Within the range of a sphere of 3MPa, preferably with a radius of 3MPa 0.5 Within the range of a sphere of 1 MPa, more preferably with a radius of 1 MPa 0.5 is within the ball range.
[0016] Here, the Hansen solubility parameter (HSP) is a value used to predict the solubility of a substance, which was announced by Charles M. Hansen in 1967. It is a parameter based on the idea that "two substances with similar intermolecular interactions tend to dissolve in each other." HSP is made up of the following three parameters (unit: MPa 0.5 ) δD: Energy due to intermolecular dispersion forces δP: Energy due to intermolecular dipole interactions δH: Energy due to hydrogen bonds between molecules These three parameters can be regarded as coordinates in a three-dimensional space (Hansen space), and when the HSPs of two substances are placed in the Hansen space, the closer the distance between the two points, the easier it is for them to dissolve in each other. A detailed explanation is given in the March 2010 issue of Kagaku Kogyo (Kagaku Kogyosha), and the Hansen solubility parameters of various substances can be obtained by using the computer software "HSPiP: Hansen Solubility Parameters in Practice." This disclosure uses the Hansen solubility parameters obtained using this computer software "HSPiP: Hansen Solubility Parameters in Practice." When component A is a mixed organic solvent of two or more kinds, the distance of the HSP as a mixed organic solvent can be calculated using the HSP calculation function for mixed organic solvents in "HSPiP: Hansen Solubility Parameters in Practice." The coordinates of the HSP of component A in the present disclosure can also be expressed as follows. That is, the coordinates of the HSP of component A are (δD A , δP A , δH A ), the coordinates of the HSP of component A (δD A , δP A , δH A ) and the distance R (unit: MPa) between the component coordinate X (δD = 17.0, δP = 9.0, δH = 7.5) 0.5 ) may satisfy the following formula: Distance R = [4(δD A -17.0) 2 +(δP A -9.0) 2 +(δH A -7.5) 2 ] 0.5 ≦10MPa 0.5
[0017] Examples of organic solvents having the above HSP values include at least one selected from amides, ketones, glycol ethers, alcohols, sulfur-containing compounds, and nitrogen-containing compounds, all of which have the above HSP values. Examples of the amides having the above HSP value include cyclic amides having the above HSP value. Examples of the cyclic amides include N-methyl-2-pyrrolidone (NMP) (R: 3.87 MPa) 0.5 ) etc. Examples of ketones having the above HSP value include cyclic ketones having the above HSP value. Examples of the cyclic ketones include isophorone (distance R: 2.69 MPa 0.5 ) are mentioned. Examples of glycol ethers having the above HSP value include monoalkyl glycol ethers having the above HSP value, dialkyl glycol ethers having the above HSP value, etc. Examples of the monoalkyl glycol ethers include phenyl triglycol (triethylene glycol monophenyl ether) (distance R: 3.68 MPa 0.5 ), Hexyl diglycol (Diethylene glycol monohexyl ether) (Distance R: 4.39 MPa 0.5 ) and the like. Examples of the dialkyl glycol ether include dibutyl diglycol (diethylene glycol dibutyl ether) (distance R: 5.82 MPa). 0.5 ) etc. Examples of alcohols having the above HSP value include aromatic alcohols having the above HSP value. Examples of aromatic alcohols having the above HSP value include benzyl alcohol (R: 7.32 MPa) 0.5 ) etc. An example of a sulfur-containing compound having the above HSP value is dimethyl sulfoxide (DMSO) (R: 8.36 MPa). 0.5 ) etc.
[0018] In one or more embodiments, Component A preferably contains at least one selected from amides, ketones, and glycol ethers having the above HSP value, more preferably contains at least one selected from cyclic amides, cyclic ketones, and dialkyl glycol ethers having the above HSP value, and further preferably contains at least one selected from cyclic amides and cyclic ketones having the above HSP value, and is preferably 0.1 to 1.2 times the HSP value of 1.0% by weight in NMP (R = 3.87 MPa). 0.5 ) and isophorone (distance R: 2.69 MPa 0.5 It is more preferable that the compound contains at least one of the following:
[0019] In one or more embodiments, Component A in the present disclosure is a mixed organic solvent in which two or more organic solvents having the above HSP values are combined. In one or more other embodiments, component A in the present disclosure is a mixed organic solvent containing an organic solvent having the above HSP value and an organic solvent other than the organic solvent having the above HSP value. Even if component A contains an organic solvent other than the organic solvent having the above HSP value, the effects of the present disclosure can be achieved as long as the HSP value of the entire mixed organic solvent is within the above-mentioned range. An example of an organic solvent other than the organic solvent having the above HSP value is triethylene glycol (distance R: 11.81 MPa 0.5 ), N-methyldiethanolamine (distance R: 10.13 MPa 0.5 ) etc. When component A is a mixed organic solvent, the HSP value of the mixed organic solvent can be calculated from the HSP values of the individual organic solvents constituting the mixed organic solvent and the mixing ratio.
[0020] In an embodiment of the present disclosure, component A is a mixed organic solvent, and the mixed organic solvent has an HSP value of δD=17.0, δP=9.0, and δH=7.5, with a radius of 10 MPa as the center. 0.5 By using the mixture in this way, a compound that cannot be effectively used as an organic solvent by itself can be used as a component of the organic solvent (component A).
[0021] The content of the organic solvent having the above HSP value in component A is preferably 60% by mass or more, more preferably 70% by mass or more, and even more preferably 80% by mass or more, from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material, and from the viewpoint of suppressing flammability, it is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 90% by mass or less. From the same viewpoint, the content of the organic solvent having the above HSP value in component A is preferably 60% by mass or more and 95% by mass or less, more preferably 70% by mass or more and 93% by mass or less, and even more preferably 80% by mass or more and 90% by mass or less. When component A contains at least one selected from amides, ketones and glycol ethers having the above HSP value, the content of the amides having the above HSP value in the treatment agent of the present disclosure is preferably 30% by mass or more, more preferably 50% by mass or more, and even more preferably 70% by mass or more from the viewpoint of improving the permeability into epoxy insulating materials and improving the removal processability of epoxy insulating materials, and is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 90% by mass or less from the viewpoint of suppressing flammability. From the same viewpoint, the content of the amides having the above HSP value in the treatment agent of the present disclosure is preferably 30% by mass or more and 95% by mass or less, more preferably 50% by mass or more and 93% by mass or less, and even more preferably 70% by mass or more and 90% by mass or less. When component A contains at least one selected from amides, ketones and glycol ethers having the above HSP value, the content of the ketones having the above HSP value in the treatment agent of the present disclosure is preferably 30% by mass or more, more preferably 40% by mass or more, and even more preferably 50% by mass or more from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material, and from the viewpoint of suppressing flammability, it is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 90% by mass or less. From the same viewpoint, the content of the ketones having the above HSP value in the treatment agent of the present disclosure is preferably 30% by mass or more and 95% by mass or less, more preferably 40% by mass or more and 93% by mass or less, and even more preferably 50% by mass or more and 90% by mass or less. When component A contains at least one selected from amides, ketones and glycol ethers having the above HSP value, the content of the glycol ethers having the above HSP value in the treatment agent of the present disclosure is preferably 5% by mass or more, more preferably 10% by mass or more, and even more preferably 15% by mass or more from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material, and from the viewpoint of suppressing flammability, it is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 90% by mass or less. From the same viewpoint, the content of the glycol ethers having the above HSP value in the treatment agent of the present disclosure is preferably 5% by mass or more and 95% by mass or less, more preferably 10% by mass or more and 93% by mass or less, and even more preferably 15% by mass or more and 90% by mass or less.
[0022] The content of component A in the treatment agent of the present disclosure is preferably 60% by mass or more, more preferably 70% by mass or more, and even more preferably 80% by mass or more from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material, and is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 90% by mass or less from the viewpoint of suppressing flammability. From the same viewpoint, the content of component A in the treatment agent of the present disclosure is preferably 60% by mass or more and 95% by mass or less, more preferably 70% by mass or more and 93% by mass or less, and even more preferably 80% by mass or more and 90% by mass or less. When component A is a combination of two or more types, the content of component A refers to the total content thereof.
[0023] In the present disclosure, "the content of each component in the treatment agent" refers to the content of each component in the treatment agent at the time of use, i.e., at the time when the treatment agent starts to be used for treating an epoxy-based insulating material. In one or more embodiments, the content of each component in the treatment agent of the present disclosure can be considered to be the blending amount of each component in the treatment agent of the present disclosure.
[0024] [Component B: Water] In one or more embodiments, the treatment agent of the present disclosure may further contain water (hereinafter, also referred to as "component B"), or in one or more other embodiments, may not contain water. In one or more embodiments, examples of component B include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.
[0025] When the treatment agent of the present disclosure contains Component B, the content of Component B in the treatment agent of the present disclosure can be the remainder excluding Component A and optional components (other components described below). When the treatment agent of the present disclosure contains component B, the content of component B in the treatment agent of the present disclosure is preferably 2% by mass or more, more preferably 5% by mass or more, and even more preferably 10% by mass or more from the viewpoint of safety such as flammability, and is preferably 25% by mass or less, more preferably 23% by mass or less, and even more preferably 20% by mass or less from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material. From the same viewpoint, the content of component B in the treatment agent of the present disclosure is preferably 2% by mass or more and 25% by mass or less, more preferably 5% by mass or more and 23% by mass or less, and even more preferably 10% by mass or more and 20% by mass or less.
[0026] [Other ingredients] In one or more embodiments, the treatment agent of the present disclosure may further contain other components as necessary within a range that does not impair the effects of the present disclosure. Examples of other components include a solvent other than component A, an anticorrosive agent, a stabilizer, a pH adjuster, a viscosity adjuster, etc.
[0027] [Method of manufacturing the treatment agent] In one or more embodiments, the treatment agent of the present disclosure can be produced by blending component A and, if necessary, the above-mentioned optional components (component B and other components) by a known method. For example, the treatment agent of the present disclosure can be one that is formed by blending at least the component A. Therefore, the present disclosure relates to a method for producing a treatment agent, which includes a step of blending at least the component A. In the present disclosure, "blending" includes mixing component A and, if necessary, the above-mentioned optional components (component B, other components) simultaneously or in any order. When component A is composed of two or more organic solvents (mixed organic solvents), each organic solvent can be blended simultaneously or separately. In the method for producing a treatment agent of the present disclosure, the preferred blending amount of each component can be the same as the preferred content of each component of the treatment agent of the present disclosure described above.
[0028] [Processing object] In one or a plurality of embodiments, the treatment agent of the present disclosure is used to remove and / or process at least a portion of an epoxy-based insulating material from a substrate (workpiece) having the epoxy-based insulating material. In one or more embodiments, the workpiece may be a substrate having an epoxy-based insulating material layer on its surface, or a substrate having a metal layer and an epoxy-based insulating material layer on its surface. In one or more embodiments, the epoxy insulating material layer may be an insulating layer containing an epoxy insulating material. The epoxy insulating material layer may have a thickness of, for example, 10 to 100 μm. In one or more embodiments, the epoxy insulating material layer is an uncured (unheat-treated) epoxy insulating material layer. The substrate may be, for example, a film substrate (film substrate), and examples of the film substrate include, for example, a polyethylene terephthalate substrate (PET substrate), etc. Examples of the substrate having a metal layer include, for example, a substrate on which a pattern of a metal layer is formed, etc. In one or more embodiments, the metal layer is a copper plating layer. The copper plating layer can be formed by, for example, an electroless copper plating method. The thickness of the metal layer can be, for example, 3 μm or more and 30 μm or less.
[0029] Examples of the workpiece include electronic components having an epoxy-based insulating material and intermediate products thereof. Examples of the electronic components include at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The intermediate products are intermediate products in the manufacturing process of the electronic components.
[0030] [Processing method] In one aspect, the present disclosure relates to a treatment method including removing and / or processing at least a part of an epoxy-based insulating material from a substrate (subject to be treated) having the epoxy-based insulating material, the treatment method including contacting the substrate (subject to be treated) having the epoxy-based insulating material with a treatment agent of the present disclosure (hereinafter also referred to as the "treatment method of the present disclosure"). Examples of the substrate to be treated include the above-mentioned substrates. According to the treatment method of the present disclosure, the removal processability of the epoxy-based insulating material can be improved.
[0031] Examples of a method for removing and / or processing at least a portion of an epoxy insulating material from a workpiece using the treatment agent of the present disclosure, or a method for contacting the workpiece with the treatment agent of the present disclosure, include a method for contacting the workpiece by immersing the workpiece in a bath containing the treatment agent, and a method for spraying the treatment agent. As for the immersion conditions and spray irradiation conditions, for example, the temperature of the treatment agent during immersion or spray irradiation is preferably 40°C or higher, more preferably 45°C or higher, and even more preferably 50°C or higher from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material, and is preferably 70°C or lower, more preferably 65°C or lower, and even more preferably 60°C or lower from the viewpoint of usability such as odor. The immersion time and spray irradiation time are preferably 15 seconds or more, more preferably 20 seconds or more, and even more preferably 30 seconds or more from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material, and are preferably 5 minutes or less, more preferably 3 minutes or less, and even more preferably 1 minute or less from the viewpoint of production efficiency. The spray pressure during spray irradiation is, for example, 0.05 MPa or more and 0.3 MPa or less from the viewpoint of improving the permeability into the epoxy insulating material and improving the removal processability of the epoxy insulating material.
[0032] In the treatment method of the present disclosure, it is preferable to irradiate ultrasonic waves when the treatment agent of the present disclosure comes into contact with the object to be treated, and it is more preferable that the ultrasonic waves have a relatively high frequency, from the viewpoint that the removal processing power (removal processability) of the treatment agent of the present disclosure is easily exhibited. From the same viewpoint, the irradiation conditions of the ultrasonic waves are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.
[0033] In one or more embodiments, the treatment method of the present disclosure can include a step of contacting the treatment object with the treatment agent, rinsing with water or alcohol, and drying. In one or more embodiments, the treatment method of the present disclosure can include a step of contacting the treatment object with the treatment agent, and rinsing with water or alcohol. EXAMPLES
[0034] The present disclosure will be specifically described below with reference to examples, but the present disclosure is not limited to these examples in any way.
[0035] 1. Physical properties of organic solvents (HSP coordinates and distances) The HSP coordinates (δD1, δP1, δH1) of the organic solvent were calculated using the computer software "HSPiP: Hansen Solubility Parameters in Practice". The distance R between the HSP coordinates (δD1, δP1, δH1) of the organic solvent and the component coordinates (δD = 17.0, δP = 9.0, δH = 7.5) was calculated using the following formula. The results are shown in Table 1. Distance R=[4(δD1-17.0) 2 +(δP1-9.0) 2 +(δH1-7.5) 2 ] 0.5
[0036] [Table 1]
[0037] 2. Preparation of Treatment Agents of Examples 1 to 7 and Comparative Example 1 The components shown in Tables 2 to 4 were blended in the amounts (mass %, active content) shown in Tables 2 to 4 and stirred to mix, thereby preparing the treatment agents of Examples 1 to 7 and Comparative Example 1.
[0038] The treatment agents of Examples 1 to 7 and Comparative Example 1 were prepared using the following materials. (Component A) N-Methyl-2-pyrrolidone (NMP) [Fujifilm Wako Pure Chemical Industries, Ltd.] Isophorone [Fujifilm Wako Pure Chemical Corporation] Dibutyl diglycol [Nippon Nyukazai Co., Ltd.] Benzyl alcohol [Fujifilm Wako Pure Chemical Industries, Ltd.] Dimethyl sulfoxide (DMSO) [Fujifilm Wako Pure Chemical Industries, Ltd.] Phenyl triglycol [Nippon Nyukazai Co., Ltd.] Hexyl Diglycol [Nippon Nyukazai Co., Ltd.] N-Methyldiethanolamine [Nippon Nyukazai Co., Ltd.] Triethylene glycol [Fujifilm Wako Pure Chemical Industries, Ltd.] (Component B) Water [Pure water of 1μS / cm or less produced using the Organo Corporation pure water system G-10DSTSET]
[0039] 3. Evaluation of treatment agents The treatment agents prepared in Examples 1 to 7 and Comparative Example 1 were evaluated as follows.
[0040] [Evaluation test piece] The test piece was 50 mm x 50 mm in size and consisted of a film substrate (polyethylene terephthalate substrate) on which an uncured (before curing) epoxy-based insulating material layer (thickness: 25 μm) was formed (substrate having an uncured epoxy-based insulating material layer).
[0041] [Permeability evaluation] The test pieces were immersed in the treatment agent heated to 60° C. and visually observed, and evaluated according to the following criteria. The results are shown in Tables 2 to 4. <Evaluation criteria> A: Epoxy-based insulating material becomes transparent in less than 30 seconds B: Epoxy insulating material becomes transparent in 30 to 60 seconds. C: Epoxy insulating material does not become transparent even after 60 seconds or more, but becomes translucent in less than 30 seconds. D: Epoxy insulating material does not become transparent even after 60 seconds or more, and does not even become translucent even after 30 seconds or more.
[0042] [Removal processability evaluation] The test piece was immersed in the treatment agent heated to 50°C for 30 seconds while being irradiated with ultrasonic waves of 40 kHz and 360 W, then rinsed with ethanol for 5 seconds and left to dry, and evaluated according to the following criteria. The results are shown in Table 2. <Evaluation criteria> A: More than 80% of the epoxy insulating material is removed. B: More than 50% but less than 80% of the epoxy insulating material is removed. C: More than 20% and less than 50% of the epoxy insulating material is removed. D: Less than 20% of the epoxy insulating material is removed.
[0043] [Flash point rating] The test was carried out according to the method specified in JIS K2265-4 to evaluate the presence or absence of a flash point. The results are shown in Table 4.
[0044] [Table 2]
[0045] As shown in Table 2, the HSP values of the organic solvents are δD = 17.0, δP = 9.0, and δH = 7.5, with a radius of 10 MPa as the center. 0.5 In Example 1, the HSP value of the organic solvent is δD = 17.0, δP = 9.0, δH = 7.5, and the radius is 10 MPa. 0.5 It was found that the composition had excellent permeability and removal processability compared to Comparative Example 1, which was not within the range of the sphere.
[0046] [Table 3]
[0047] As shown in Table 3, Examples 2 and 3 containing NMP or isophorone had better penetration than Examples 4 and 5 not containing NMP or isophorone, so it is believed that the treatment agent containing at least one of NMP and isophorone has better removal processability.
[0048] [Table 4]
[0049] As shown in Table 4, Example 7, which contains water (component B), has no flash point and is safer than Example 6, which does not contain water (component B). [Industrial Applicability]
[0050] According to the present disclosure, a treatment agent having excellent removal processability for epoxy insulating materials can be provided. Furthermore, by using the treatment agent of the present disclosure, the productivity of semiconductor devices can be improved.
Claims
1. Contains an organic solvent (component A), The Hansen solubility parameter values (HSP values) of component A are δD = 17.0, δP = 9.0, and δH = 7.5, with a radius of 10 MPa as the center. 0.5 A treatment agent for epoxy-based insulating materials that falls within the scope of the above sphere.
2. Component A is a mixed organic solvent, and the mixed organic solvent has an HSP value of δD = 17.0, δP = 9.0, and δH = 7.5 at a radius of 10 MPa. 0.5 The treatment of claim 1 , comprising a compound that is outside the scope of the sphere of
3. The HSP value of component A is δD = 17.0, δP = 9.0, δH = 7.5, with a radius of 5 MPa as the center. 0.5 The treatment according to claim 1 or 2, wherein the particle size is within a sphere of
4. 4. The treatment agent according to claim 1, wherein component A comprises at least one member selected from the group consisting of amides, ketones, and glycol ethers.
5. 5. The treatment agent according to claim 1, wherein Component A comprises at least one member selected from the group consisting of cyclic amides, cyclic ketones, and dialkyl glycol ethers.
6. 6. The treatment according to claim 1, wherein component A contains at least one of N-methyl-2-pyrrolidone and isophorone.
7. Further containing water (component B), The treatment agent according to claim 1 , wherein the content of component B is 2% by mass or more and 25% by mass or less.
8. 1. A processing method comprising removing and / or processing at least a portion of an epoxy based insulating material from a substrate having the epoxy based insulating material, the method comprising the steps of: A method for treating a substrate having an epoxy-based insulating material, comprising contacting the treating agent according to any one of claims 1 to 7 with the substrate.
Citation Information
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