Plasma processor

Abstract

To provide a technique of adjusting the Q-value of a resonator of a plasma processor.SOLUTION: The disclosed plasma processor includes a chamber, a substrate supporting unit, an excitation electrode, a discharge unit, and a resonator. The substrate processing unit is provided in the chamber. The excitation electrode is provided above the substrate supporting unit. The discharge unit is provided to discharge electromagnetic waves into a plasma generation space below the excitation electrode. The discharge unit extends in a circumferential direction around the central axial line of the excitation electrode to surround a plasma generation space. The resonator is provided on the excitation electrode. The resonator includes a first end and a second end and a plurality of slots. The slots are arranged along the second end and also along the circumferential direction and an electromagnetic wave in the resonator is supplied from the slots to the discharge unit. The length of the longer direction as the circumferential direction of each slot is variable.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An exemplary embodiment of the present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] A plasma processing apparatus is used in processing a substrate. One type of plasma processing apparatus is known that excites a gas using high frequency waves, such as VHF waves or UHF waves. The following Patent Document 1 discloses such a plasma processing apparatus. The plasma processing apparatus of Patent Document 1 includes a processing vessel, a stage, an upper electrode, an introduction section, and a waveguide section. The stage is provided in the processing vessel. The upper electrode is provided above the stage through a space in the processing vessel. The introduction section is an introduction section for high frequency waves. The introduction section is provided at a lateral end of the space and extends in a circumferential direction around the central axis of the processing vessel. The waveguide section is configured to supply high frequency waves to the introduction section. The waveguide section includes a resonator that provides a waveguide. The waveguide of the resonator extends in a circumferential direction around the central axis, extends in the direction in which the central axis extends, and is connected to the introduction section. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-92031 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for adjusting the Q value of a resonator in a plasma processing apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, an excitation electrode, an emitter, and a resonator. The chamber provides a processing space therein. The substrate support is provided in the processing space. The excitation electrode has a central axis and is provided above the substrate support. The emitter is provided to emit electromagnetic waves into a plasma generation space below the excitation electrode. The emitter extends in a circumferential direction with respect to the central axis to surround the plasma generation space. The resonator is provided on the excitation electrode. The resonator includes a first end and a second end provided to resonate electromagnetic waves therebetween, and a plurality of slots provided so that the electromagnetic waves in the resonator are supplied from them to the emitter. The plurality of slots are arranged along the second end and along the circumferential direction. Each of the plurality of slots has the circumferential direction as its longitudinal direction, and is configured such that its length in the longitudinal direction is variable. Effect of the Invention

[0006] According to one exemplary embodiment, it is possible to adjust the Q value of a resonator in a plasma processing apparatus. [Brief description of the drawings]

[0007] [Figure 1] 1 illustrates a plasma processing apparatus according to an exemplary embodiment; [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Diagram 3] FIG. 1 illustrates a plasma processing apparatus according to another exemplary embodiment. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] 4 is a cross-sectional view taken along line VV in FIG. 3. [Figure 6] FIG. 4 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] 1A is a diagram showing an example of the positional relationship between a plurality of first slots and a plurality of second slots. FIG. [Figure 8]13 is a diagram showing another example of the positional relationship between a plurality of first slots and a plurality of second slots. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0009] Fig. 1 is a diagram showing a plasma processing apparatus according to an exemplary embodiment. Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1. The plasma processing apparatus 1 shown in Figs. 1 and 2 includes a chamber 10, a substrate support 12, an excitation electrode 14, an emission section 16, and a resonator 30.

[0010] The chamber 10 provides a processing space 10s therein. In the plasma processing apparatus 1, the substrate W is processed in the processing space 10s. The chamber 10 is made of a metal such as aluminum and is grounded. The chamber 10 has a side wall 10a and is open at its upper end. The chamber 10 and the side wall 10a may have a substantially cylindrical shape. The processing space 10s is provided inside the side wall 10a. The central axis of each of the chamber 10, the side wall 10a, and the processing space 10s is the axis AX. The chamber 10 may have a corrosion-resistant film on its surface. The corrosion-resistant film may be a ceramic film containing an yttrium oxide film, an yttrium oxide fluoride film, an yttrium fluoride film, an yttrium oxide, or an yttrium fluoride film.

[0011] The bottom of the chamber 10 provides an exhaust port 10e. An exhaust system is connected to the exhaust port 10e. The exhaust system may include a vacuum pump, such as a dry pump and / or a turbomolecular pump, and an automatic pressure control valve.

[0012] The substrate support 12 is provided in the processing space 10s. The substrate support 12 is configured to support the substrate W placed on its upper surface in an approximately horizontal manner. The substrate support 12 has an approximately disk shape. The central axis of the substrate support 12 is an axis AX.

[0013] The excitation electrode 14 is provided above the substrate support 12 via the processing space 10s. The excitation electrode 14 is made of a conductive material such as a metal (e.g., aluminum) and has a substantially disk shape. The central axis of the excitation electrode 14 is an axis AX.

[0014] The plasma processing apparatus 1 further includes an electrode 60. The electrode 60 is another excitation electrode. The electrode 60 has a substantially disk shape and is disposed so as to close the opening at the upper end of the chamber 10. The electrode 60 has a plurality of holes 60h. The plurality of holes 60h penetrate the electrode 60 in the thickness direction. The excitation electrode 14 is disposed above the electrode 60. The excitation electrode 14 and the electrode 60 form a plasma generation space 60p therebetween. In the plasma processing apparatus 1, the plasma generation space 60p is provided above the processing space 10s, away from the processing space 10s.

[0015] The emitter 16 is provided to emit electromagnetic waves therefrom into the plasma generation space. In the plasma processing apparatus 1, the emitter 16 surrounds the plasma generation space 60p and is sandwiched between the excitation electrode 14 and the electrode 60. The electromagnetic waves emitted from the emitter 16 into the plasma generation space may be high frequency waves such as VHF waves or UHF waves. The emitter 16 is formed from a dielectric material such as quartz, aluminum nitride, or aluminum oxide. The emitter 16 extends in the circumferential direction around the axis AX. The emitter 16 may have a ring shape.

[0016] In one embodiment, the excitation electrode 14 may include a shower plate 141 and an upper electrode 142. The shower plate 141 is provided above the plasma generation space 60p. The shower plate 141 provides a plurality of gas holes 14h. The plurality of gas holes 14h extend in the thickness direction (vertical direction) of the shower plate 141 and penetrate the shower plate 141.

[0017] The upper electrode 142 is provided on the shower plate 141. The upper electrode 142 forms a gas diffusion chamber 14d between the shower plate 141 and the upper electrode 142. The gas diffusion chamber 14d is connected to a gas supply unit 20. Gas from the gas supply unit 20 is discharged from a plurality of gas holes 14h through the gas diffusion chamber 14d into the plasma generation space 60p.

[0018] In the plasma processing apparatus 1, the gas in the plasma generating space 60p is excited by the electromagnetic waves emitted from the emission part 16 to the plasma generating space 60p. As a result, plasma is generated in the plasma generating space 60p. The activated species in the plasma generated in the plasma generating space 60p are supplied to the processing space 10s through the multiple holes 60h.

[0019] The resonator 30 is provided on the excitation electrode 14. The resonator 30 is electromagnetically coupled to the emission section 16. The resonator 30 provides a waveguide 32. The resonator 30 includes a conductor section 31 that defines the waveguide 32. The conductor section 31 is formed from a conductive material such as a metal. The conductive material forming the conductor section 31 may include aluminum, stainless steel, copper, brass, or the like.

[0020] The resonator 30 includes a first end 301 and a second end 302. The first end 301 is one end of the waveguide 32, and the second end 302 is the other end of the waveguide 32. The resonator 30 is configured to reflect and resonate an electromagnetic wave propagating in the waveguide 32 at the first end 301 and the second end 302. The electromagnetic wave resonated in the resonator 30 is supplied to the emission section 16 from a plurality of slots 302s (described later) and emitted into the plasma generation space.

[0021] The plasma processing apparatus 1 may further include a high-frequency power source 34. The high-frequency power source 34 is configured to generate high-frequency power. The electromagnetic waves introduced into the plasma generating space are generated based on the high-frequency power generated by the high-frequency power source 34. The high-frequency power source 34 may be directly connected to the resonator 30 using a coaxial line. That is, the high-frequency power source 34 may be coupled to the waveguide of the resonator 30 without an impedance matching device. The coaxial line may include a connector 36 as a connection part to the resonator 30. The connector 36 may be connected to the resonator 30 so as to introduce the electromagnetic waves into the resonator 30 from the top layer of the multiple layers 320 of the waveguide 32 described later. In this case, the inner conductor of the connector 36 is connected to a conductor plate 31p described later that defines the top layer from below, and the outer conductor of the connector 36 is connected to a conductor plate 31p (upper wall 31u) that defines the top layer from above.

[0022] In one embodiment, the waveguide 32 may have a folded structure including a plurality of folded portions. In one embodiment, the waveguide 32 may be configured axially symmetric or rotationally symmetric with respect to the axis line AX. In one embodiment, the conductor portion 31 may include an inner portion 31i (or an inner peripheral portion), an outer portion 31o (or an outer peripheral portion), and a plurality of conductor plates 31p.

[0023] The multiple conductive plates 31p extend in radial directions relative to the axis AX and are arranged parallel to one another along the vertical direction in which the axis AX extends. The inner portion 31i and the outer portion 31o extend coaxially relative to the axis AX. Each of the inner portion 31i and the outer portion 31o may have a substantially cylindrical shape whose central axis is the axis AX. Each of the inner portion 31i and the outer portion 31o may be formed of a tubular (e.g., cylindrical) conductive wall extending between adjacent conductive plates 31p in the vertical direction.

[0024] The waveguide 32 may also include a plurality of layers 320. The plurality of layers 320 extend in a radial direction with respect to the axis AX between the inner portion 31i and the outer portion 31o, and are arranged alternately with the plurality of conductive plates 31p. Each of the plurality of layers 320 is connected to the layer thereabove among the plurality of layers 320 at one of a plurality of folded portions along the inner portion 31i or the outer portion 31o.

[0025] In one embodiment, the first end 301 is disposed above the second end 302. The first end 301 is provided by an outer portion 31o of the resonator 30. The first end 301 surrounds a top layer of the plurality of layers 320.

[0026] The second end 302 is composed of a wall 31wb of the outer portion 31o surrounding the lowest layer of the plurality of layers 320. The second end 302 extends in a circumferential direction around the axis AX above the emission portion 16. As shown in FIG. 2, a plurality of slots 302s are formed in the lowest conductor plate 31b that defines the lowest layer from below among the plurality of conductor plates 31p. In addition, in the plasma processing apparatus 1, the conductor plate 31b is also the upper electrode 142. The plurality of slots 302s are arranged in the vicinity of or along the second end 302. The plurality of slots 302s are coupled to the emission portion 16 on the outer side with respect to the excitation electrode 14. The plurality of slots 302s extend in a circumferential direction with respect to the axis AX and are arranged along the circumferential direction. The plurality of slots 302s are arranged alternately with the plurality of portions 302r in the conductor plate 31b. In one embodiment, a radial distance between the axis AX and an outer edge of each of the slots 302s may be approximately equal to a radius of the wall 31wb of the outer portion 31o. In this resonator 30, the electromagnetic wave is reflected at the second end 302 toward the first end 301. Also, a portion of the electromagnetic wave propagating in the resonator 30 is coupled to the emission portion 16 through the slots 302s.

[0027] 2, each of the plurality of slots 302s has a circumferential direction as its longitudinal direction. The longitudinal length of each of the plurality of slots 302s can be changed.

[0028] 1 and 2, in the plasma processing apparatus 1, the resonator 30 further includes a plurality of short-circuit members 70. Each of the plurality of short-circuit members 70 shorts a pair of edges extending in the circumferential direction in a corresponding slot among the plurality of slots 302s. As a result, each of the plurality of short-circuit members 70 changes the length of the corresponding slot in the longitudinal direction.

[0029] In one embodiment, each of the short-circuit members 70 may be a screw (e.g., a set screw) made of metal. In this case, a plurality of screw hole groups 142G are formed in the resonator 30, specifically, in the conductive plate 31b (or the upper electrode 142). Each of the plurality of screw hole groups 142G includes a plurality of screw holes 142h. Each of the plurality of screw holes 142G extends in a radial direction with respect to the axis line AX. The plurality of screw holes 142h in each of the plurality of screw hole groups 142G penetrates one edge of a pair of edges of a corresponding slot among the plurality of slots 302s, and is arranged in the circumferential direction along the one edge. The plurality of screw holes 142h in each of the plurality of screw hole groups 142G may penetrate one edge of the corresponding slot between one end and the center in the longitudinal direction of the corresponding slot.

[0030] In one embodiment, the screw holes 142h of each of the screw hole groups 142G penetrate the conductive plate 31b from the outer edge of the conductive plate 31b to the corresponding slot. Each of the short-circuit members 70, i.e., a screw, passes through a selected screw hole among the screw holes 142h penetrating one edge of the corresponding slot and the corresponding slot, and short-circuits a pair of edges of the corresponding slot.

[0031] According to the plasma processing apparatus 1, the length of the multiple slots 302s in the longitudinal direction is adjusted by the multiple short-circuit members 70. The Q value of the resonator 30 increases as the length of the multiple slots 302s decreases. Therefore, according to the plasma processing apparatus 1, the Q value of the resonator 30 can be adjusted.

[0032] Hereinafter, a plasma processing apparatus according to another exemplary embodiment will be described with reference to Figs. 3 to 6. Fig. 3 is a diagram showing a plasma processing apparatus according to another exemplary embodiment. Fig. 4 is a cross-sectional view taken along line VI-IV in Fig. 3. Fig. 5 is a cross-sectional view taken along line VV in Fig. 3. Fig. 6 is a cross-sectional view taken along line VI-VI in Fig. 3. Hereinafter, the plasma processing apparatus 1B shown in Figs. 3 to 6 will be described from the viewpoint of differences from the plasma processing apparatus 1.

[0033] The plasma processing apparatus 1B does not include an electrode 60. In the plasma processing apparatus 1B, the discharge unit 16 extends to surround the shower plate 141. The shower plate 141 and the discharge unit 16 close the opening at the upper end of the chamber 10. In the plasma processing apparatus 1B, the plasma generation space is the space within the processing space 10s and directly below the shower plate 141.

[0034] The plasma processing apparatus 1B may further include a gas pipe 64. The gas pipe 64 extends vertically inside the inner portion 31i. The central axis of the gas pipe 64 is located on the axis line AX. The gas pipe 64 is connected between the gas diffusion chamber 14d and the gas supply unit 20.

[0035] The plasma processing apparatus 1B includes a resonator 30B instead of the resonator 30. The resonator 30B will be described below from the viewpoint of differences from the resonator 30. In the resonator 30B, the conductive plate 31b is a conductive plate separate from the upper electrode 142, and extends above the upper electrode 142. In the resonator 30B, the second end 302 is provided by the conductive plate 31b (first conductive plate) and the upper electrode 142 (second conductive plate). Also, a plurality of slots 302s are provided by the conductive plate 31b and the upper electrode 142.

[0036] Specifically, as shown in FIG. 5, a plurality of slots 30bs (a plurality of first slots) are formed in the conductive plate 31b. The plurality of slots 30bs have a longitudinal direction that is the circumferential direction with respect to the axis line AX. The plurality of slots 30bs are arranged at equal intervals along the circumferential direction. Also, as shown in FIG. 6, a plurality of slots 14s (a plurality of second slots) are formed in the upper electrode 142. The plurality of slots 14s have a longitudinal direction that is the circumferential direction with respect to the axis line AX. The plurality of slots 14s are arranged at equal intervals along the circumferential direction. The plurality of slots 14s are disposed below the plurality of slots 30bs.

[0037] The number of the multiple slots 14s is the same as the number of the multiple slots 30bs. The radius of curvature of the inner edge of the multiple slots 14s about the axis AX is the same as or approximately the same as the radius of curvature of the inner edge of the multiple slots 30bs about the axis AX. The radius of curvature of the outer edge of the multiple slots 14s about the axis AX is the same as or approximately the same as the radius of curvature of the outer edge of the multiple slots 30bs about the axis AX. In addition, the length of the multiple slots 14s in the longitudinal direction is the same as or approximately the same as the length of the multiple slots 30bs in the longitudinal direction.

[0038] In the resonator 30B, the multiple slots 302s are composed of one of the multiple slots 30bs and one of the multiple slots 14s that overlap each other in the vertical direction. In the resonator 30B, the conductive plate 31b and the upper electrode 142 are configured to change the length of each of the multiple slots 302s by adjusting the positional relationship in the circumferential direction between the multiple slots 30bs and the multiple slots 14s. Therefore, one or both of the conductive plate 31b and the upper electrode 142 are configured to be rotatable around the axis line AX. That is, it is possible to rotate the multiple slots 30bs and / or the multiple slots 14s in the circumferential direction around the axis line AX. One or both of the conductive plate 31b and the upper electrode 142 may be rotated manually. Alternatively, one or both of the conductive plate 31b and the upper electrode 142 may be rotated by an actuator such as a motor and a control unit that controls the actuator.

[0039] Here, reference is made to Figs. 7 and 8. Fig. 7 is a diagram showing an example of the positional relationship between the first slots and the second slots. Fig. 8 is a diagram showing another example of the positional relationship between the first slots and the second slots. As shown in Fig. 7, the length of each of the slots 302s in the circumferential direction is maximum when the center positions of the slots 30bs in the circumferential direction and the center positions of the slots 14s in the circumferential direction coincide with each other. On the other hand, as shown in Fig. 8, the length of each of the slots 302s in the circumferential direction is shorter when the center positions of the slots 30bs in the circumferential direction and the center positions of the slots 14s in the circumferential direction are deviated from each other.

[0040] As described above, the plasma processing apparatus 1B allows adjustment of the circumferential, i.e., longitudinal, lengths of the slots 302s, and therefore allows adjustment of the Q value of the resonator 30B.

[0041] 3 to 6 will be referred to again below along with FIG. 7 and FIG. 8. The number of slots 302s in the resonator 30B is nine in the state shown in FIG. 7. That is, the number of slots 302s is an odd number. When the number of slots 302s is an odd number, the generation of an electric field intensity distribution (or plasma density distribution) that is two-fold rotationally symmetric around the axis line AX in the plasma generation space is suppressed compared to when the number of slots 302s is an even number. Note that the number of slots 302s may be an odd number other than nine, so long as it is five or more. Also, the number of slots 302s in the resonator 30B may be an even number.

[0042] In the plasma processing apparatus 1B, the outer part 31o has a substantially cylindrical shape and has the axis AX as its central axis. The outer part 31o may include a plurality of walls 31w. Each of the plurality of walls 31w extends between the corresponding conductive plates 31p adjacent to each other in the vertical direction and has a substantially cylindrical shape. At least a wall 31wb surrounding the lowest layer of the plurality of walls 31w extends along the sides of a polygon in a cross section perpendicular to the axis AX. Two or more or all of the plurality of walls 31w may extend along the sides of a polygon in a cross section perpendicular to the axis AX. In one embodiment, the wall 31wb may have a polygonal tube shape. Also, each of two or more or all of the plurality of walls 31w may have a polygonal tube shape. In the example shown in the figure, the polygon is a regular nonagon, but may be another polygon.

[0043] In one embodiment, the wall 31wb may be formed from a plurality of plate-like bodies 311. Also, each of two or more or each of all of the walls 31w may be formed from a plurality of plate-like bodies 311. Each of the plurality of plate-like bodies 311 is formed from the above-mentioned metal. Each of the plurality of plate-like bodies 311 may be a flat plate. Each of the plurality of plate-like bodies 311 extends along a corresponding side of the above-mentioned polygon in a cross section perpendicular to the axis line AX.

[0044] In the resonator 30B, the magnitude of the current flowing in the radial direction with respect to the axis AX in the conductor plate 31b has a circumferential distribution that is minimum in the direction from the axis AX toward the corners of the polygon and maximum at the centers of the sides of the polygon. Therefore, in each of the multiple slots 302s, the electric field intensity distribution in the circumferential direction is adjusted.

[0045] In one embodiment, the number of the slots 302s in the state shown in FIG. 7 may be the same as the number of the corners of the polygon. Also, when the slots 302s are in the state shown in FIG. 7, the position of each of the corners of the polygon and the center position in the circumferential direction of the corresponding slot among the slots 302s may be aligned in the radial direction with respect to the axis AX. Usually, the magnitude of the current flowing in the radial direction toward the center of each slot 302s in the conductor plate 31b is maximum. However, in the resonator 30B, the magnitude of the current flowing in the radial direction in the conductor plate 31b has a circumferential distribution in which the magnitude is weakened at the center of each slot 302s and strengthened between adjacent slots 302s. Therefore, the uniformity of the distribution of the electric field intensity in the circumferential direction is increased in each of the slots 302s.

[0046] In one embodiment, the plates 311 may be spaced apart from one another to provide gaps at the corners of the polygon, as shown in Fig. 5. Alternatively, a vertically extending edge of each of the plates 311 may be connected to a vertically extending edge of a corresponding other plate among the plates 311 at a corresponding corner of the polygon. When the plates 311 are spaced apart from one another to provide gaps at the corners of the polygon, the magnitude of the current flowing radially toward the corners of the polygon is further reduced.

[0047] The resonator 30B also provides a plurality of inlets 31h in any one of the walls 31w of the outer portion 31o, connecting the waveguide 32 to the outside of the resonator 30B. The plurality of inlets 31h may be arranged along the circumferential direction. In one embodiment, the plurality of inlets 31h are provided in the wall 31wb, and connect the lowest layer of the plurality of layers 320 of the waveguide 32 to the outside of the resonator 30B.

[0048] In the plasma processing apparatus 1B, the excitation electrode 14 (e.g., the upper electrode 142) may include a built-in heating mechanism 143. The heating mechanism 143 may be a heater such as a resistive heating element. In this case, the heating mechanism 143 is connected to a heater power supply. The power of the heater power supply may be controlled by a controller in accordance with the difference between a measured value of the temperature of the excitation electrode 14 measured by a temperature sensor and a target value.

[0049] Furthermore, the upper electrode 142 provides a waveguide 14w between each of the plurality of slots 302s and the emission section 16. The waveguide 14w extends in the circumferential direction about the axis line AX and has a ring shape in a plan view. In the plasma processing apparatus 1B, the electromagnetic waves emitted from the plurality of slots 302s are supplied to the emission section 16 via the waveguide 14w.

[0050] Moreover, the upper electrode 142 provides a cavity 421 inside the waveguide 14w and between the upper electrode 142 and the resonator 30B. The cavity 421 is connected to the waveguide 14w via a plurality of communication holes 14c. The plurality of communication holes 14c are arranged along the circumferential direction. In the plasma processing apparatus 1B, the cavity 421 is connected to a space outside the resonator 30B via the inlet 31h, the waveguide 32, the plurality of slots 302s, the waveguide 14w, and the plurality of communication holes 14c.

[0051] The plasma processing apparatus 1B further includes a heat sink 51 and a fan 52. The heat sink 51 is disposed on the support 50 above the resonator 30B. The fan 52 is supported by the support 50 and is connected to a flow path in the heat sink 51. In the plasma processing apparatus 1B, a cavity 422 is provided between the inner part 31i of the resonator 30B and the gas pipe 64. The cavity 422 is connected between the cavity 421 and the flow path of the heat sink 51. The cavity 421 and the heat sink 51 are covered by a cover 53.

[0052] In the plasma processing apparatus 1B, gas (e.g., air) outside the resonator 30B is supplied to the cavity 421 through the inlet 31h, the waveguide 32, the multiple slots 302s, the waveguide 14w, and the multiple communication holes 14c. The gas supplied to the cavity 421 flows along the upper surface of the upper electrode 142 and exchanges heat with the upper electrode 142, i.e., the excitation electrode 14. Thereafter, the gas is supplied to a flow path in the heat sink 51 through the cavity 422, cooled in the heat sink 51, and exhausted to the outside by the fan 52.

[0053] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0054] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0055] 1...plasma processing apparatus, 10...chamber, 12...substrate support, 14...excitation electrode, 16...emission portion, 30...resonator, 31...conductor portion, 31i...inner portion, 31o...outer portion, 31p...conductor plate, 301...first end, 302...second end, 302s...slot, 32...waveguide, 320...layer, 70...short-circuit member, 14s...slot, 30bs...slot.

Claims

1. a chamber providing a processing volume therein; a substrate support disposed within the processing space; an excitation electrode having a central axis and disposed above the substrate support; an emitter provided to emit electromagnetic waves into a plasma generation space below the excitation electrode, the emitter extending in a circumferential direction with respect to the central axis so as to surround the plasma generation space; a resonator provided on the excitation electrode; Equipped with the resonator includes a first end and a second end configured to resonate an electromagnetic wave therebetween, and a plurality of slots configured to supply the electromagnetic wave in the resonator to the emitter; The plurality of slots are arranged along the second end and along the circumferential direction, Each of the plurality of slots has the circumferential direction as its longitudinal direction, and is configured such that its length in the longitudinal direction is variable. Plasma processing equipment.

2. The resonator further includes a plurality of shorting members; each of the plurality of short-circuiting members changes the length of a corresponding slot among the plurality of slots by short-circuiting a pair of edges extending in the circumferential direction in the corresponding slot; The plasma processing apparatus according to claim 1 .

3. the resonator has a plurality of screw hole groups each including a plurality of screw holes; the plurality of screw holes in each of the plurality of screw hole groups penetrate one of the pair of edges of a corresponding slot among the plurality of slots and are arranged in a circumferential direction along the corresponding slot; each of the plurality of short-circuiting members is a screw, and passes through a selected one of the plurality of screw holes penetrating one edge of the corresponding slot and the corresponding slot to short-circuit the pair of edges; The plasma processing apparatus according to claim 2 .

4. 4. The plasma processing apparatus according to claim 3, wherein the plurality of screw holes in each of the plurality of screw hole groups penetrate the one edge between one end and a center in the longitudinal direction of the corresponding slot.

5. The resonator comprises: a first conductor plate having the circumferential direction as its longitudinal direction and having a plurality of first slots formed therein arranged along the circumferential direction; a second conductor plate disposed below the first conductor plate, the second conductor plate having a longitudinal direction in the circumferential direction and a plurality of second slots arranged along the circumferential direction; Including, each of the plurality of slots is composed of one of the plurality of first slots and one of the plurality of second slots; the first conductor plate and the second conductor plate are configured to change the length of each of the plurality of slots by adjusting a positional relationship between the plurality of first slots and the plurality of second slots in the circumferential direction. The plasma processing apparatus according to claim 1 .

6. The plasma processing apparatus according to claim 5 , wherein at least one of the first conductive plate and the second conductive plate is configured to be rotatable in the circumferential direction.

7. The resonator comprises: an inner portion and an outer portion extending coaxially with respect to the central axis; A plurality of conductor plates arranged parallel to each other along a vertical direction in which the central axis extends; a waveguide including a plurality of layers extending between the outer portion and the inner portion and interleaved with the plurality of conductor plates; each of the plurality of layers is connected to an upper layer of the plurality of layers at one of a plurality of folds along the inner portion or the outer portion; the first end extends to surround an uppermost layer of the plurality of layers, The second end extends to surround the lowest layer of the plurality of layers. The plasma processing apparatus according to any one of claims 1 to 6.

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