Chemical mechanical polishing correction tool

Abstract

To disclose a polishing tool used for chemical mechanical polishing (CMP).SOLUTION: A chemical mechanical polishing touch up tool includes: a pedestal wich supports a substrate; a plurality of jaw parts which centrally arrange the substrate on the pedestal; a load ring which adds a pressure to an annular region on a rear side of the substrate on the pedestal; a polishing ring which brings a polishing material into contact with an annular region on a front side of the substrate positionally aligned with the annular region on the rear side of the substrate; and a polishing ring actuator which rotates the polishing ring to cause relative motion between the polishing ring and the substrate.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to polishing tools for use in chemical mechanical polishing (CMP). [Background technology]

[0002] Integrated circuits are typically formed on a substrate by sequentially depositing conductive, semiconductive, or insulating layers on a semiconductor wafer. Various manufacturing processes require planarization of layers on the substrate. For example, one manufacturing step involves depositing a fill layer over a non-planar surface and planarizing the fill layer. For certain applications, the fill layer is planarized until the top surface of the patterned layer is exposed. For example, a metal layer can be deposited on a patterned insulating layer to fill the trenches and holes in the insulating layer. After planarization, the remaining portions of the metal within the trenches and holes of the patterned layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate. As another example, a dielectric layer can be deposited on a patterned conductive layer and then planarized to allow for subsequent photolithography steps.

[0003] Chemical mechanical polishing (CMP) is one accepted planarization method. This planarization method typically requires that the substrate be mounted on a carrier head. The exposed surface of the substrate is typically placed against a rotating polishing pad. The carrier head provides a controllable load on the substrate to press it against the polishing pad. An abrasive slurry containing abrasive particles is typically supplied to the surface of the polishing pad. Summary of the Invention

[0004] In one aspect, a chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a load ring that applies pressure to an annular region on the backside of the substrate that is on the pedestal, a polishing ring that brings a polishing material into contact with an annular region on the frontside of the substrate that is aligned with the annular region on the backside of the substrate, and a polishing ring actuator that rotates the polishing ring to provide relative motion between the polishing ring and the substrate.

[0005] In another aspect, a chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate; an asymmetric compensation ring including multiple independently vertically movable segments that apply independently controllable pressures to zones disposed at multiple angular positions in an annular region on the backside of the substrate on the pedestal; a polishing ring that contacts a polishing material with an annular region on the frontside of the substrate aligned with the annular region on the backside of the substrate; and a polishing ring actuator that rotates the polishing ring to provide relative motion between the polishing ring and the substrate.

[0006] In another aspect, a method for chemical mechanical polishing touch-up includes supporting a substrate on a pedestal, engaging a front side of the substrate with a polishing ring, engaging a back side of the substrate with an asymmetric correction ring, holding the back side of the substrate against the asymmetric correction ring, and polishing the front side of the substrate with the polishing ring.

[0007] Implementations may include one or more of the following:

[0008] The segmented polishing ring may have 4-12 segments. The backside of the substrate may be adsorbed to the asymmetric compensation ring. The substrate may be immobilized. Slurry may be dispensed onto the frontside of the substrate. The polishing ring may be adjusted using adjustment pads on the jaws that are used to center the substrate on the pedestal.

[0009] The above advantages may include, but are not limited to, one or more of the following: Under-polishing of one or more regions of a substrate after bulk polishing can be corrected. Asymmetric polishing can also be corrected. As a result, within-wafer and between-wafer uniformity can be improved.

[0010] The details of one or more implementations are set forth in the accompanying drawings and the description below. Other aspects, features, and advantages will be apparent from the description and drawings, and from the claims. [Brief description of the drawings]

[0011] [Figure 1] 1 is a schematic cross-sectional view of a polishing system. [Diagram 2] 1 is a schematic cross-sectional view of an abrasive touch-up tool. [Diagram 3] 1 is a schematic cross-sectional view of an abrasive touch-up tool. [Figure 4] 1 is a schematic cross-sectional view of an abrasive touch-up tool. [Diagram 5] 1 is a schematic cross-sectional view of an abrasive touch-up tool. [Figure 6] 1 is a schematic cross-sectional view of an abrasive touch-up tool. [Figure 7] 1 is a schematic cross-sectional view of an abrasive touch-up tool. [Figure 8] FIG. 2 is a schematic bottom view of an asymmetric correction ring. [Figure 9] FIG. 2 is a schematic perspective view of an asymmetric correction ring. [Figure 10] 13 is a flowchart of an abrasive touch-up operation. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Some polishing processes result in thickness non-uniformities across the surface of the substrate. For example, a bulk polishing process may result in under-polished areas on the substrate. To address this issue, after bulk polishing, a "touch-up" polishing process can be performed that focuses on the under-polished portions of the substrate.

[0013] In a bulk polishing process, polishing occurs over the entire surface of the substrate, potentially at different rates in different areas of the surface. At a given moment in the bulk polishing process, the entire surface of the substrate may not be polished. For example, due to grooves in the polishing pad, some parts of the substrate surface may not be in contact with the polishing pad. In any case, over the course of the bulk polishing process, the entire surface of the substrate is polished to some extent, since this part is not localized due to the relative motion between the polishing pad and the substrate.

[0014] In contrast, in a "touch-up" polishing process, the polishing pad can contact less than the entire surface of the substrate, and the range of movement of the polishing pad relative to the substrate is such that over the course of the touch-up polishing process, the polishing pad contacts only localized areas of the substrate, and a significant portion (e.g., at least 50%, at least 75%, or at least 90%) of the substrate's surface never contacts the polishing pad and is therefore not polished at all.

[0015] As mentioned above, some bulk polishing processes result in non-uniform polishing. In particular, some bulk polishing processes result in localized, non-concentric and non-uniform spots of under-polishing. Hypothetically, a polishing "touch-up" can be performed using a very small pad that is moved over the under-polished area. However, this may be impractical due to low throughput.

[0016] One solution to address local non-uniformity is to use a separate polishing "touch-up" tool that includes a load ring that can apply pressure to a localized annular region of the substrate. The larger the contact area of ​​the load ring, the larger the under-polished area that can be polished simultaneously, resulting in higher throughput. In particular, such a ring can address the common problem of annular under-polished areas near the edge of the substrate.

[0017] To address local asymmetries, the loading ring can be segmented to apply different pressures to different segments of the ring. The substrate can be centered on the pedestal, and the segmented asymmetric correction ring can apply pressure to the backside of the substrate in an angularly asymmetric manner. In addition, the polishing ring can apply pressure to the front side of the substrate and rotate against the front side to polish the substrate. Since the polishing rate is proportional to the pressure from the asymmetric correction ring, non-uniformity can be reduced and asymmetries can be corrected.

[0018] FIG. 1 shows an example of a polishing system 100 including a bulk polishing apparatus 104. The substrate 10 to be polished can be transferred between the bulk polishing apparatus 104 for bulk polishing and a polishing touch-up tool 200 (see FIGS. 2-7) for correcting polishing non-uniformities, e.g., edge correction. For example, the substrate can be transferred to the polishing touch-up tool 200 simultaneously with or after bulk polishing of the substrate 10 in the polishing apparatus 104. The transfer of the substrate 10 can be performed between the station 102 and the apparatus 104 using a mechanism, e.g., a load / unload assembly or a robotic arm. In some implementations, the correction station 102 is a stand-alone system. In this case, the correction station 102 can be located near the bulk polishing apparatus 104, e.g., in the same process chamber.

[0019] The polishing apparatus 104 includes one or more carrier heads 140 (only one shown). Each carrier head 140 is operable to hold a substrate 10, such as a wafer, against a polishing pad 110. Each carrier head 140 can have independent control of polishing parameters, e.g., pressure, associated with the respective substrate. Each carrier head 140 includes a retaining ring 142 that holds the substrate 10 in position over the polishing pad 110 and below a flexible membrane 144.

[0020] Each carrier head 140 can optionally include multiple independently controllable pressurizable chambers defined by a membrane, for example three chambers 146a-146c, that can apply independently controllable pressures to associated zones on the flexible membrane 144 and thus on the substrate 10.

[0021] Each carrier head 140 is suspended from a support structure 150, e.g., a carousel or track, and is connected by a drive shaft 152 to a carrier head rotation motor 154 such that the carrier head can rotate about an axis 155. Optionally, each carrier head 140 can be oscillated laterally, for example on a slider of the carousel 150, by rotational oscillation of the carousel itself, or by movement along a track of a carriage supporting the carrier head 140.

[0022] The polishing apparatus 104 includes a platen 120, which is a rotatable, disk-shaped platen on which the polishing pad 110 rests. The platen is operable to rotate about an axis 125. For example, a motor 121 can orbit a drive shaft 124 to rotate the platen 120. The polishing pad 110 can be a dual-layer polishing pad having an outer polishing layer 112 and a softer backing layer 114.

[0023] The polishing apparatus 104 can include a port 130 that dispenses a polishing fluid 132, such as a slurry, onto the polishing pad 110. The polishing apparatus can also include a polishing pad conditioner that abrades the polishing pad 110 to maintain the polishing pad 110 in a consistent abrasive condition.

[0024] In operation, the platen is rotated about its central axis 125 and each carrier head is rotated about its central axis 155 and translated laterally across the upper surface of the polishing pad.

[0025] Although only one carrier head 140 is shown, a larger number of carrier heads can be provided to hold additional substrates so as to efficiently use the surface area of ​​the polishing pad 110. Thus, the number of carrier head assemblies adapted to hold substrates for a simultaneous polishing process can be based, at least in part, on the surface area of ​​the polishing pad 110.

[0026] In some implementations, the polishing apparatus includes an in-situ monitoring system 160. The in-situ monitoring system can be an optical monitoring system, such as a spectroscopic monitoring system, that can be used to measure the spectrum of reflected light from the substrate being polished. Optical access through the polishing pad is provided by including an aperture (i.e., a hole through the pad) or a solid window 118. The in-situ monitoring system can alternatively or additionally include an eddy current monitoring system.

[0027] In some implementations, the optical monitoring system 160 is a sequential optical monitoring system having a probe (not shown) positioned between two polishing apparatuses or between a polishing apparatus and a transfer station. The monitoring system 160 can continuously or periodically monitor one or more characteristics of a zone of the substrate during polishing. For example, one characteristic is the thickness of each zone of the substrate.

[0028] In either in-situ or sequential embodiments, the optical monitoring system 160 can include a light source 162, a light detector 164, and circuitry 166 for sending and receiving signals between a remote controller 190, e.g., a computer, and the light source 162 and the light detector 164. One or more optical fibers 170 can be used to transmit light from the light source 162 to an optical access in the polishing pad and to transmit light reflected from the substrate 10 to the detector 164.

[0029] 2, an abrasive touch-up tool 200 configured to perform an abrasive touch-up, i.e., abrasive correction operations, includes a pedestal 210 mounted on a base 212. The pedestal 210 is configured to support a front side 11 of a substrate 10. The substrate 10 can be loaded into the abrasive touch-up tool 200 using a carrier head, such as carrier head 140. The base 212 can include one or more slurry channels 214 with one or more slurry dispensers 216.

[0030] The polishing touch-up tool 200 also includes a plurality (e.g., three or more) jaws 220 configured to close radially inward toward the substrate 10. This acts to align the center of the substrate 10 with a reference axis 250. Each jaw 220 can be driven by a separate jaw actuator 222, or a common actuator can drive all of the jaws 222. The jaw actuator 222 can be, for example, a motor, a hydraulic chamber, a pneumatic chamber, a screw thread drive, or other similar actuator. A conditioning pad 224 can be connected to the jaws 220.

[0031] The polishing touch-up tool 200 also includes a polishing ring 230 that is coaxial with the axis 250. The polishing ring 230 can be an annular polishing ring having a plurality of arcuate segments. For example, the polishing ring 230 can be configured with 4 to 12 segments. A polishing ring actuator 232 can be configured to move the polishing ring 230 to engage the front side 11 of the substrate 10.

[0032] The polishing touch-up tool 200 also includes a load ring 240 (see also FIG. 8 ). The load ring 240 can be an annular ring configured to contact an annular portion of the backside 12 of the substrate 10 that corresponds to the annular portion of the frontside 11 of the substrate 10 being polished by the polishing ring 230. The width of the load ring 240 can be wider than the width of the polishing ring 230. The load ring 230 can also be coaxial with the axis 250.

[0033] The load ring 240 can include a chuck 242 configured to engage and grip the backside 12 of the substrate 10. For example, a number of vacuum channels 246 can extend from a vacuum source 260, such as a pump, a fixture vacuum line having a control valve, etc., through the load ring 240 to the chuck 242. This allows the chuck 242 to hold the substrate 10 on the load ring 240 (e.g., a suction mount).

[0034] In some implementations, the load ring 240 is an asymmetric correction ring configured to address asymmetries of the substrate 10. With reference to FIGS. 8-9, the load ring 240 can be a segmented annular ring having multiple arcuate segments 244. The downward pressure on each segment 244 can be controlled to correct asymmetries of the front side 11 of the substrate 10 (e.g., substrate asymmetries caused by a previous polishing operation). There can be 4-12 segments 244. Each segment 244 of the load ring 240 can have a corresponding individually pressurizable chamber 248. The independently pressurizable zone chambers 248 can be connected to a pressure source 260 using channels 252 and pressurized using the pressure source 260. This allows the asymmetric correction ring to be configured to apply different pressures to multiple arcuate zones on the substrate 10.

[0035] 3, after the substrate 10 is loaded onto the pedestal 210, a number of jaws 220 can engage the edges of the substrate 10. The jaws 220 can be used to center the substrate 10 on the pedestal 210. In particular, the jaws 220 can close radially inward to urge the substrate 10 to a position where the substrate 10 is coaxial with the axis 250.

[0036] The jaw actuator 222 may cause the jaws 220 to close inwardly against the substrate 10 until the jaws 220 encounter some resistance from engaging the substrate 10. The jaw actuator 222 may then disengage the jaws 220 from the substrate 10, e.g., open, so that there is some play between the jaws 220 and the substrate 10. For example, the jaw actuator 222 may cause the jaws 220 to leave a small amount of play, e.g., 0.1-3 mm, between the jaws 220 and the substrate 10.

[0037] 4, once the substrate 10 is centered on the pedestal, the polishing ring 230 is moved to engage an annular region of the front side 11 of the substrate 10. The polishing ring actuator 232 radially moves the multiple arcuate segments 244 of the polishing ring 230, causing the polishing ring 230 to polish different portions of the front side 11 of the substrate 10 (arrow A). In this manner, the polishing ring 230 can polish different portions of the front side 11 of the substrate 10, for example, an annular zone between the edge and 5 mm from the edge, or an annular zone between 20-50 mm from the edge of the substrate.

[0038] The polishing ring actuator 232 can move the polishing ring 230 vertically toward or away from the substrate 10 to raise or lower the substrate 10. Optionally, the polishing ring actuator 232 can move segments of the polishing ring 230 inward and outward to polish, for example, different radii of the substrate 10. The polishing ring 230 can engage the substrate 10 and then lift the substrate 10 off the pedestal 210.

[0039] 5, the load ring 240 can engage an annular region of the backside 12 of the substrate 10. In some implementations, the substrate 10 can rest on the pedestal 210 while being engaged by the load ring 240. In some implementations, the substrate 10 can be gripped by the load ring 240 and lifted off the pedestal 210 by vertical movement of the load ring 210. In some implementations, the substrate 10 can be lifted off the pedestal 210 by vertical movement of the polishing ring 230 and then engaged (e.g., gripped) by the load ring 240.

[0040] After the load ring engages the substrate 10 (e.g., after the chuck 242 grips the substrate 10 to the load ring 240), the polishing ring actuator 232 can rotate the polishing ring 230 to polish a portion, e.g., an edge, of the front side 11 of the substrate 10. While the polishing ring 230 rotates, the load ring 240 can be stationary, allowing the substrate 10 to remain stationary. The slurry channel 214 (described above) can deliver slurry to the front side 11 of the substrate 10 using a slurry dispenser 216 during this edge control operation.

[0041] Assuming that the load ring 240 is an asymmetric compensation ring, the chamber 248 can be independently pressurized to different pressures such that different segments 244 of the load ring 240 apply different pressures to zones disposed at multiple angular positions in an annular region of the backside 12 of the substrate 10. The pressure applied to the substrate 10 by the load ring 240 can cause different zones of the front side 11 of the substrate 10 to be polished at different rates, thereby enabling the polishing touch-up tool 200 to compensate for asymmetries in the substrate.

[0042] 6, after a touch-up operation (e.g., a correction or edge control operation) is performed, the load ring 240 disengages from the substrate 10 (e.g., stops attracting the substrate 10) and the substrate 10 rests on the polishing ring 230. The jaws 220 may also move away from the substrate 10. The substrate 10 resting on the polishing ring 230 may then be lifted out of the polishing touch-up tool 200, for example, using the carrier head 140.

[0043] 7, once the substrate 10 is removed from the polishing touch-up tool 200, the jaw actuator 222 can position the jaw 220 above the polishing ring 230. Specifically, the conditioning pad 224 located on the jaw 220 can be positioned above the polishing ring 230. The polishing ring actuator 232 can bring the polishing ring 230 into contact with the conditioning pad 224, whereupon the conditioning pad 224 can grind the polishing ring 230 to maintain the polishing ring 230 in a consistent grinding state. The polishing ring 230 can rotate about a central axis 250 to cause the conditioning pad 224 to grind the polishing ring 230.

[0044] 2-7, the polishing touch-up tool 200 includes a controller 190 coupled to various components of the apparatus, such as the pressure source 260, the jaw actuator 222, the polishing ring actuator 232, and the independently pressurizable zone chambers of the load ring 240. The sensor 295 can be used to detect asymmetries in the front side 11 of the substrate 10. For example, the sensor 295 can be an optical sensor that measures different portions of the front side 11. The sensor 295 can transmit the measurements to the controller 190, which can then pressurize the independently pressurizable zone chambers of the load ring 240 to adjust the pressure that each zone 244 applies to the back side 12 of the substrate 10 during an edge control operation.

Claims

1. a pedestal configured to support a substrate; a plurality of jaws configured to center the substrate on the pedestal; a load ring that applies pressure to an annular area on the backside of the substrate that rests on the pedestal; a polishing ring for contacting a polishing material with an annular region on a front side of the substrate aligned with the annular region on the back side of the substrate; a polishing ring actuator that rotates the polishing ring to provide relative motion between the polishing ring and the substrate; A chemical mechanical polishing touch-up tool comprising:

2. The tool of claim 1 , further comprising a jaw actuator that moves one or more of the jaws to center the substrate on the pedestal.

3. The tool of claim 1 , wherein the plurality of jaws comprises between 4 and 12 jaws.

4. The tool of claim 1 , wherein the axis of rotation of the polishing ring is coaxial with the load ring and the substrate.

5. The tool of claim 1 , wherein the load ring is wider than the polishing ring.

6. The tool of claim 1 further comprising a slurry channel and a slurry dispenser.

7. The tool of claim 1 , wherein the load ring provides a chuck for holding the substrate.

8. The tool of claim 1 , further comprising a conditioner pad connected to the plurality of jaws for grinding the abrasive material on the polishing ring.

9. a pedestal configured to support a substrate; an asymmetric compensation ring including a plurality of independently vertically movable segments for applying independently controllable pressures to zones disposed at a plurality of angular positions in an annular region on the backside of the substrate on the pedestal; a polishing ring for contacting a polishing material with an annular region on a front side of the substrate aligned with the annular region on the back side of the substrate; a polishing ring actuator that rotates the polishing ring to provide relative motion between the polishing ring and the substrate; A chemical mechanical polishing touch-up tool comprising:

10. The tool of claim 9 , wherein the asymmetric correction ring includes between 4 and 12 independently vertically movable segments.

11. The tool of claim 9 , wherein the asymmetric compensation ring includes a plurality of independently pressurizable zone chambers corresponding to the plurality of independently vertically movable segments.

12. The tool of claim 9 , wherein the polishing ring is a segmented polishing ring.

13. The tool of claim 9 , wherein the axis of rotation of the polishing ring is coaxial with the asymmetric correction ring and the substrate.

14. The tool of claim 9 , wherein the asymmetric correction ring provides a chuck for holding the substrate.

15. supporting a substrate on a pedestal; engaging a front side of the substrate with a polishing ring; engaging a backside of the substrate with an asymmetric compensation ring; holding the backside of the substrate against the asymmetric correction ring; polishing the front side of the substrate with the polishing ring; A method for chemical mechanical polishing touch-up comprising:

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