Lithography method, article manufacturing method, information processing method, computer program, and information processing apparatus

Abstract

To provide a technique advantageous in improving the overlay accuracy while suppressing cost.SOLUTION: A lithography method includes forming, on a substrate, a plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer. The lithography method includes: a detection step for detecting relative position information between the first pattern and the second pattern in an aligning step of the substrate and an original for patterning of the third layer; and a collection step for collecting the relative position information obtained in the detection step.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a lithography method, an article manufacturing method, an information processing method, a computer program, and an information processing device. [Background technology]

[0002] In recent years, with the miniaturization and high integration of devices, there is an increasing demand for improved overlay accuracy. In a lithography apparatus such as an exposure apparatus, an alignment mark provided in a shot area of ​​the substrate is used to align the substrate and the original, and the accuracy of this alignment can be expressed as overlay accuracy. Patent Document 1 describes that in a system having an exposure apparatus and a measuring instrument, the measuring instrument actually measures an overlay error between a first pattern on an object and a second pattern on the first pattern, and an optimization process is performed based on the actual measurement result. The optimization process includes a first sub-process of detecting an abnormality in the overlay accuracy, and a second sub-process of optimizing the process conditions based on the correlation between the actual measurement value of the overlay error and the process conditions of the alignment process when an abnormality is detected. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5194800 Summary of the Invention [Problem to be solved by the invention]

[0004] In general, the overlay error can be measured using an overlay measurement apparatus after a pattern is formed on a substrate using a lithography apparatus. Here, measuring the overlay error for all substrates is advantageous in terms of improving the overlay accuracy but is disadvantageous in terms of cost. On the other hand, measuring the overlay error for only sampled substrates is advantageous in terms of cost but is disadvantageous in terms of improving the overlay accuracy.

[0005] An object of the present invention is to provide an advantageous technique for improving overlay accuracy while suppressing costs. [Means for solving the problem]

[0006] A first aspect of the present invention relates to a lithography method for forming a plurality of layers on a substrate, including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the lithography method including a detection step of detecting relative position information indicating relative positions of the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer, and a collection step of collecting the relative position information obtained in the detection step.

[0007] A second aspect of the present invention relates to a lithography method for forming a plurality of layers on a substrate, including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the lithography method including a detection step for detecting relative positions of the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer, and an adjustment step for adjusting at least one of a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer based on a result obtained in the detection step.

[0008] A third aspect of the present invention relates to a method for manufacturing an article, the method including a lithography step of forming a plurality of layers by a lithography method according to the first or second aspect, and a processing step of processing a substrate that has undergone the lithography step to obtain an article.

[0009] A fourth aspect of the present invention relates to an information processing method for processing information obtained in a lithography method for forming a plurality of layers on a substrate, including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the information processing method including a detection step for detecting relative position information indicating relative positions of the first pattern and the second pattern based on an image obtained by imaging the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer, and a collection step for collecting information obtained in the detection step.

[0010] A fifth aspect of the present invention relates to an information processing method for processing information obtained in a lithography method for forming a plurality of layers on a substrate, including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the information processing method including: a detection step for detecting positions of the first pattern and the second pattern based on images obtained by capturing the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer; and an adjustment step for generating adjustment information for adjusting at least one of a lithography apparatus used in patterning the first layer and a lithography apparatus used in patterning the second layer, based on a result obtained in the detection step.

[0011] A sixth aspect of the present invention relates to a computer program for causing a computer to execute the information processing method according to the fourth or fifth aspect.

[0012] A seventh aspect of the present invention relates to an information processing device for processing information obtained in a lithography method for forming a plurality of layers on a substrate, including a first layer including a first pattern, a second layer including a second pattern, and a third layer, wherein the information processing device executes a detection step for detecting relative position information indicating the relative positions of the first pattern and the second pattern based on an image obtained by imaging the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer, and a collection step for collecting information obtained in the detection step.

[0013] An eighth aspect of the present invention relates to an information processing device for processing information obtained in a lithography method for forming a plurality of layers on a substrate, including a first layer including a first pattern, a second layer including a second pattern, and a third layer, wherein the information processing device executes a detection step of detecting positions of the first pattern and the second pattern based on images obtained by capturing the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer, and an adjustment step of generating adjustment information for adjusting at least one of a lithography device used for patterning the first layer and a lithography device used for patterning the second layer based on a result obtained in the detection step. Effect of the Invention

[0014] The present invention provides an advantageous technique for improving overlay accuracy while reducing costs. [Brief description of the drawings]

[0015] [Figure 1A] FIG. 1 is a diagram showing an example of the arrangement of an exposure apparatus according to an embodiment. [Figure 1B] FIG. 2 is a diagram showing an example of the configuration of a position measuring device; [Diagram 2] 1 is a diagram illustrating an example of an arrangement of a plurality of shot areas on a substrate; [Diagram 3] 3A and 3B are a plan view and a cross-sectional view showing an example of the configuration of a mark that can be provided in a shot area. [Figure 4] 1A to 1C are views illustrating a lithography method according to a first embodiment. [Diagram 5] FIG. 2 is a diagram showing a first example of operation of a lithography method. [Figure 6] FIG. 11 is a diagram showing a second example of operation of the lithography method. [Figure 7] FIG. 11 is a diagram showing a third example of operation of a lithography method. [Figure 8] 5A to 5C are views illustrating a lithography method according to a second embodiment. [Figure 9] 5A-5D illustrate steps in a lithographic method for forming multiple layers on a substrate according to a second embodiment. [Figure 10] 5A and 5B are diagrams for explaining a process of detecting the position of a mark based on the positions of a first pattern and a second pattern that constitute the mark. [Figure 11] FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. The embodiments describe a number of features, but not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted. (First embodiment) 1A shows the configuration of an exposure apparatus 200 according to an embodiment. The exposure apparatus 200 is an example of a lithography apparatus that transfers a pattern of an original 31 onto a substrate 83 in a method for manufacturing a device or an article, such as a semiconductor element or a liquid crystal display element. Such a lithography apparatus may be, for example, an imprint apparatus or another pattern forming apparatus, such as an electron beam lithography apparatus. The exposure apparatus 200 can transfer the pattern of the original 31 onto the photoresist-coated substrate 83 as a latent image by projecting the pattern of the original 31 onto the substrate 83 on which a photoresist is applied.

[0017] The exposure apparatus 200 as a lithography apparatus can be used to pattern at least one of a plurality of layers in a lithography method for forming a plurality of layers on a substrate 83. The plurality of layers can include, for example, a first layer including a first pattern, a second layer including a second pattern, and a third layer. In one example, the exposure apparatus 200 is configured to transfer a pattern of the original 31 to a substrate 83 having the first layer including the first pattern, the second layer including the second pattern, and the third layer. The exposure apparatus 200 transfers the pattern of the original 31 to the photoresist as a latent image by exposing a photoresist applied to the substrate 83 through the original 31. The photoresist is developed to form a resist pattern. A pattern corresponding to the resist pattern can be formed in the underlying layer by etching the underlying layer (for example, the third layer) using the resist pattern.

[0018] In this embodiment, the exposure apparatus 200 employs a step-and-scan method, but can also employ other exposure methods such as a step-and-repeat method. As illustrated in Fig. 1A, the exposure apparatus 200 can include an illumination optical system 181, an original stage RS that holds an original 31, a projection optical system 32, a substrate stage WS that holds a substrate 83, a position measurement device 120, and a control unit CU. The control unit CU may be connected to an individual information processing device PU and further to a shared information processing device IPE.

[0019] The illumination optical system 181 is an optical system that illuminates the original 31 using light from the light source unit 180. The light source unit 180 includes, for example, a laser. The laser can be an ArF excimer laser with a wavelength of about 193 nm, or a KrF excimer laser with a wavelength of about 248 nm, but the type of light source is not limited to an excimer laser. For example, the light source unit 180 may use an F2 laser with a wavelength of about 157 nm, or an EUV (Extreme Ultra Violet) with a wavelength of 20 nm or less as a light source.

[0020] The illumination optical system 181 can be configured to shape the light from the light source unit 180 into a slit light having a predetermined shape optimal for exposure, and to use this slit light to illuminate the original 31. The illumination optical system 181 has the function of uniformly illuminating the original 31 and the function of polarized illumination. The illumination optical system 181 includes, for example, a lens, a mirror, an optical integrator, an aperture, etc., and is configured by arranging a condenser lens, a fly's-eye lens, an aperture aperture, a condenser lens, a slit, and an imaging optical system in this order.

[0021] The original 31 is made of, for example, quartz. A pattern (for example, a circuit pattern) to be transferred to the substrate 83 is formed on the original 31. The original stage RS holds the original 31 via an original chuck (not shown). The original stage RS is driven by an original driving mechanism (not shown). The original driving mechanism includes a linear motor and the like, and is capable of moving the original stage RS in the X-axis direction, the Y-axis direction, the Z-axis direction 4, and the rotational direction of each axis, thereby moving the original 31 held by the original stage RS. The position of the original 31 is measured by an original position measuring unit (not shown) of an oblique light incidence system, and the position of the original 31 can be controlled based on the measurement result.

[0022] The projection optical system 32 has a function of forming an image of light from an object surface (original 31) on an image surface (substrate 83). The projection optical system 32 transfers the pattern of the original 31 to a photoresist on the substrate 83 by projecting light (diffracted light) that has passed through the pattern of the original 31 onto the substrate 83. The projection optical system 32 may be an optical system made up of multiple lens elements, an optical system including multiple lens elements and at least one concave mirror (catedioptric optical system), or an optical system including multiple lens elements and at least one diffractive optical element such as a kinoform.

[0023] The substrate 83 is a processing object onto which the pattern of the original 31 is transferred. The substrate 83 can be, for example, a wafer, a liquid crystal substrate, or other member. The substrate stage WS holds the substrate 83 via a substrate chuck (not shown), and is driven by a substrate driving mechanism (not shown). The substrate driving mechanism includes a linear motor and the like, and can move the substrate 83 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotational direction of each axis. In addition, a reference plate 39 is provided on the substrate stage WS.

[0024] The positions of the original stage RS and the substrate stage WS are monitored by, for example, a six-axis laser interferometer IF, and the original stage RS and the substrate stage WS can be driven at a constant speed ratio under the control of the control unit CU.

[0025] The control unit CU is composed of a computer (information processing device) including a CPU, a memory, and the like, and generally controls each unit of the exposure apparatus 200 according to a program stored in the storage unit, for example, to operate the exposure apparatus 200. The control unit CU controls, for example, an exposure process in which the pattern of the original 31 is transferred to the substrate 83 by exposing the substrate 83 through the original 31. The control unit CU may also execute a measurement process using the position measurement device 120, and a correction process (arithmetic process) in which the measurement value obtained by the measurement process is corrected. In other words, the control unit CU may function as part of the position measurement device 120, that is, as all or part of the processor of the position measurement device 120.

[0026] 1B shows a configuration example of the position measurement instrument 120. The position measurement instrument 120 may be called an alignment scope. The position measurement instrument 120 may include an illumination system that illuminates the substrate 83, an image sensor 75, and an imaging system that forms an image of light from a mark 72 on the substrate 83 on the image sensor 75. In the example of FIG. 1B, the position measurement instrument 120 has components shared by the illumination system and the imaging system.

[0027] First, the illumination system will be described. Light from a light source 61 is guided to an illumination aperture stop 64 via illumination optical systems 62 and 63. The light that has passed through the illumination aperture stop 64 is guided to a polarizing beam splitter 68 via an illumination optical system 65, a mirror 66, and an illumination optical system 67. The polarizing beam splitter 68 transmits P-polarized light parallel to the X direction and reflects S-polarized light parallel to the Y direction. The P-polarized light that has passed through the polarizing beam splitter 68 passes through an aperture stop 69, and is then converted to circularly polarized light by a λ / 4 plate 70, and passes through an objective optical system 71 to Kohler illuminate a mark 72 formed on a substrate 83.

[0028] The illumination system may have a light amount adjustment unit (not shown) and / or a wavelength adjustment unit (not shown). The light amount adjustment unit is configured to place an ND filter selected from a plurality of ND filters having different transmittances in the optical path from the light source 61, thereby adjusting the intensity of the light illuminating the substrate 83. The wavelength adjustment unit is configured to place a plurality of wavelength filters having different wavelength characteristics of transmitted light in the optical path from the light source 61, thereby adjusting the wavelength of the light illuminating the substrate 83.

[0029] The imaging system will be described below. Light reflected, diffracted, and scattered by the mark 72 on the substrate 83 passes through the objective optical system 71 and the λ / 4 plate 70, and is guided to the aperture stop 69. The polarization state of the light from the mark 72 is circularly polarized in the opposite direction to the circularly polarized light illuminating the mark 72. Therefore, if the polarization state of the light illuminating the mark 72 is right-handed circularly polarized, the polarization state of the light from the mark 72 is left-handed circularly polarized. The light converted from circularly polarized light to S-polarized light by the λ / 4 plate 70 passes through the aperture stop 69, is reflected by the polarizing beam splitter 68, and is guided to the image sensor 75 via the imaging optical system 74.

[0030] As described above, in the position detector 120, the optical path of the light illuminating the substrate 83 and the optical path of the light from the substrate 83 are separated by the polarizing beam splitter 68, and an image of the mark 72 on the substrate 83 is formed on the image sensor 75. The control unit CU can determine or acquire the position of the mark 72 in the coordinate system of the position detector 120 based on a signal waveform obtained by detecting the image of the mark 72. The intensity of the signal waveform from the mark 72 can be adjusted, for example, by a light amount adjustment unit (ND filter) provided in the illumination system of the position detector 120, output control of the light source 61, and control of the accumulation time of the image sensor 75. The control unit CU can determine or acquire the position of the mark 72 in the coordinate system of the substrate stage WS based on the position of the substrate stage WS obtained using the laser interferometer IF and the position of the mark 72 in the coordinate system of the position detector 120.

[0031] In the imaging system of the position detector 120, a detection aperture stop may be disposed between the polarizing beam splitter 68 and the image sensor 75. Also, the numerical apertures of the illumination aperture stop 64 and the detection aperture stop may be made adjustable, thereby making it possible to adjust the σ value, which is a coefficient expressing the ratio between the numerical aperture of the illumination system and the numerical aperture of the imaging system. An example of a mechanism for adjusting the numerical aperture is a configuration in which an aperture stop arbitrarily selected from a plurality of aperture stops can be disposed in the optical path.

[0032] The position measurement device 120 may be configured to detect light (reflected light and scattered light) from the mark 72, in other words, from each of the first pattern P1 and second pattern P2 constituting the mark 72, using an image sensor 75. As a method for detecting light from the mark 72, for example, dark-field detection may be adopted in which the aperture stop 64 or the detection stop (the numerical aperture of the illumination system and the imaging system, respectively) is controlled to block the zeroth-order diffracted light from the mark 72 and only higher-order diffracted light and scattered light are detected.

[0033] 2(a) and (b) each show an example of the arrangement of a plurality of shot areas on a substrate 83. In the example of FIG. 2(a), among the plurality of shot areas on a substrate 83, the shot areas on which a measurement process (alignment measurement) is performed, i.e., the sample shot areas, are shot areas 151 to 154. A scribe line (not shown) is arranged on the periphery of the shot area. In addition, when each shot area includes a plurality of chip areas (areas to be chipped by dicing), a scribe line (not shown) is also arranged between adjacent chip areas. A mark (not shown) is arranged on the scribe line. The example of FIG. 2(b) is an example in which the number of sample shot areas is increased. A mark is provided on each shot area (including the sample shot area).

[0034] 3(a) and (b) are a plan view and a cross-sectional view, respectively, illustrating the mark 72 provided in each shot area (including the sample shot area). The mark 72 may include a first pattern P1 arranged on a first layer 73L on a base 73B of the substrate 83, and a second pattern P2 arranged on a second layer 73U different from the first layer 73L. In this example, the second layer 73U is arranged on the first layer 73B. The first pattern P1 and the second pattern P2 may be arranged so as to be simultaneously within the field of view of the position measuring device 120 (alignment scope). The mark 72 has a side surface as an alignment mark for aligning the original 31 for patterning the third layer 73T on the second layer 73U. The target of the alignment of the original 31 for patterning the third layer 73T may be the first layer 73L, may be the second layer 73U, or may be the first layer 73L and the second layer 73U. In the example of Figures 3(a) and (b), the first pattern P1 arranged on the first layer 73L includes, for example, four pattern elements (mark elements) P1a, P1b, P1c and P1d, and the second pattern P2 arranged on the second layer 73U includes four pattern elements (mark elements) P2a, P2b, P2c and P2d.

[0035] Only a part of the mark 72 may be used as an alignment mark for aligning the master 31 for patterning the third layer 73T. For example, only the first pattern P1 of the mark 72 may be used as an alignment mark for aligning the master 31 for patterning the third layer 73T, in which case the target of alignment of the master 31 is the first layer 73L. Alternatively, only the second pattern P2 of the mark 72 may be used as an alignment mark for aligning the master 31 for patterning the third layer 73T, in which case the target of alignment of the master 31 is the second layer 73U.

[0036] Alternatively, both the first pattern P1 and the second pattern P2 may be used as alignment marks for aligning the master 31 for patterning the third layer 73T. In this case, the targets of alignment of the master 31 are the first layer 73B and the second layer 73U.

[0037] The mark 72 further has a side as an overlay measurement mark for measuring an overlay error. For example, the mark 72 may be used to detect the relative positions of the first pattern P1 and the second pattern P2 in an alignment process for aligning the substrate 83 and the original 31 for patterning the third layer 73T. Alternatively, a detection process may be performed after the alignment process based on an image obtained by capturing the first pattern P1 and the second pattern P2 in an alignment process for aligning the substrate 83 and the original 31 for patterning the third layer 73T. The detection process may be performed in the exposure apparatus 200 or another apparatus to detect the relative positions of the first pattern P1 and the second pattern P2. Even in this case, a process of capturing an image of an overlay measurement mark in an overlay measurement apparatus different from the exposure apparatus after patterning the third layer, as in the conventional method, is not necessary. The other device may be an individual information processing device PU, which is a dedicated information processing device connected to the exposure apparatus 200, or a shared information processing device IPE, which is an information processing device shared by a plurality of exposure apparatuses 200. The individual information processing device PU may be understood as a component of the exposure apparatus 200.

[0038] In addition to using mark 72 as an alignment mark, using it as an overlay metrology mark can also be advantageous to reduce mark crowding on the scribe line or to reduce the width of the scribe line to improve yield.

[0039] In the mark 72, the first pattern P1 may include a plurality of first portions 301, and the second pattern P2 may include a plurality of second portions 302. In one aspect, the overlay measurement mark may have a feature that the second pattern P2 fits within a rectangular area 300 circumscribing the first pattern P1. In another aspect, in the mark 72, at least a portion of at least one of the plurality of second portions 302 may be disposed between at least two of the plurality of first portions 301.

[0040] In the alignment process, the position measurement device 120 may perform position measurement of the mark 72 for alignment of the original 31 with at least one of the first layer 73L and the second layer 73U. The position measurement device 120 may also perform a detection process for detecting the relative positions of the first pattern P1 and the second pattern P2 in the alignment process. Alternatively, the position measurement device 120 may provide an image of the mark 72 captured in the alignment process to another device (e.g., an individual information processing device PU or a shared information processing device IPE) to enable the detection process to be performed by the other device.

[0041] 4 illustrates a lithography method for performing exposure (exposure of a photoresist film on the third layer) for patterning the third layer 73T of a substrate 83 having an unpatterned third layer 73T on a patterned first layer 73L and a patterned second layer 73U. Step S401 is a registration step. In the registration step, a first pattern P1 and a second pattern P2 whose relative positions are to be detected in the detection steps (S405, S407) of the alignment step (S405 to S410) are registered with respect to an exposure tool 200 used for patterning the third layer 73T. The registration step may include a step of registering a mark (first pattern P1 and / or second pattern P2) used for alignment between the substrate 83 and the original 31 in the alignment step. In the registration process, marks arranged so as to simultaneously fall within the field of view of a position measurement device 120 (alignment scope) in the exposure apparatus 200 used for patterning the third layer 73T may be registered as the first pattern P1 and the second pattern P2. The registration process may be executed by the control unit CU, the individual information processing device PU, or the shared information processing device IPE.

[0042] In step S402, the substrate 83 is loaded onto the substrate stage WS of the exposure apparatus 200 under the control of the control unit CU. In step S403, calibration is performed under the control of the control unit CU. Specifically, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the position measurement device 120 based on the design coordinate position of the reference mark provided on the reference plate 39 in the coordinate system of the substrate stage WS. Next, the positional deviation of the reference mark relative to the optical axis of the position measurement device 120 is measured, and based on the positional deviation, the coordinate system of the substrate stage WS is reset so that the origin of the coordinate system of the substrate stage WS coincides with the optical axis of the position measurement device 120. Next, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the exposure light based on the design positional relationship between the optical axis of the position measurement device 120 and the optical axis of the projection optical system 32. Then, a TTL (through-the-lens) measurement system (not shown) measures the positional deviation of the reference mark relative to the optical axis of the exposure light via the projection optical system 32. Based on the above results, the baseline, which is the distance between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32, is determined.

[0043] In step S404, pre-alignment of the substrate 83 may be performed under the control of the control unit CU. The pre-alignment may be performed, for example, using a low-magnification scope (not shown), which allows the mark 72 to be placed within the field of view of the position measurement device 120. In steps S405 to S409, an alignment step (global alignment step) may be performed under the control of the control unit CU. Specifically, in step S405, the mark 72 in a preset sample shot area among all the shot areas of the substrate 83 is imaged by the position measurement device 120. In step S406, the control unit CU may calculate (determine) the position of the mark 72 based on the image of the mark 72 imaged in step S405. The position of the mark 72 may be determined based on at least one of the position of the first pattern P1 and the position of the second pattern P2. When the position of the mark 72 is determined based on both the position of the first pattern P1 and the position of the second pattern P2, the position of the mark 72 may be determined based on, for example, the position of the first pattern P1, the position of the second pattern P2, and also on preset relative position information. The relative position information may be, for example, information indicating the relative positions of the first pattern P1 and the second pattern P2 in terms of design.

[0044] Steps S405 and S407 are detection steps in the alignment step, and in step S407, the control unit CU may calculate (determine) the relative positions of the first pattern P1 and the second pattern P2 based on the image of the mark 72 captured in step S405. Step S407 may be performed in the individual information processing device PU or the shared information processing device IPE by transferring the image of the mark 72 captured in step S405 to the individual information processing device PU or the shared information processing device IPE. In the individual information processing device PU or the shared information processing device IPE, step S407 may be performed at any timing between steps S406 to S413. The individual information processing device PU and the shared information processing device IPE may be configured, for example, by a computer having a processor and a memory. The individual information processing device PU and the shared information processing device IPE may load a computer program into the memory and operate according to the computer program to operate as a device having a target function. The individual information processing device PU and the shared information processing device IPE can be understood as information processing devices that execute an information processing method including step S407 (detection step) based on the image of the mark 72 captured in step S405. The information processing method may further include step S401 (registration step). Moreover, in the information processing method, step S401 (registration step) may further include step S412 (adjustment step) described later.

[0045] In step 408, the control unit CU judges whether or not steps S405 to S407 have been executed for all of a plurality of preset sample shot areas. Then, if there are any sample shot areas for which steps S405 to S407 have not been executed, the control unit CU executes steps S405 to S407 for those sample shot areas.

[0046] In step S409, the control unit CU performs global alignment to calculate the arrangement of all shot areas of the substrate 83 based on the positions of the marks 72 calculated in step S406 for a plurality of preset sample shot areas. In step S410, the control unit CU aligns each shot area of ​​the substrate 83 with the original 31 based on the result of the global alignment in step S409, and exposes the shot area (transfers the pattern of the original). At this time, the substrate 83 (shot area) and the original 31 may be aligned based on at least one of the position of the first pattern P1 and the position of the second pattern P2. In step S411, the substrate 83 is unloaded under the control of the control unit CU. When processing is performed on a lot consisting of a plurality of substrates 83 as a unit, steps S402 to S411 may be performed on a plurality of substrates.

[0047] Step S412 may be executed by the individual information processing device PU or the shared information processing device IPE. In step S412, an adjustment step may be executed to adjust at least one of the lithography device used to pattern the first layer 73L and the lithography device used to pattern the second layer 73U based on the result obtained in step S407 (detection step). In the adjustment step, adjustment information for simply adjusting at least one of the lithography device used to pattern the first layer 73L and the lithography device used to pattern the second layer 73U may be generated based on the result obtained in step S407. The adjustment step may be executed so that the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T is reduced. In the adjustment process, an offset value can be adjusted to adjust the patterning operation in at least one of the lithography apparatus used to pattern the first layer 73L and the lithography apparatus used to pattern the second layer 73U.

[0048] 5 shows a first example of the operation of the lithography method including the patterning of the first layer, the second layer, and the third layer. In the first example, the patterning 551 of the first layer 73L is performed using the first exposure tool 200a, the patterning 552 of the second layer 73U is performed using the second exposure tool 200b, and the patterning 553 of the third layer 73T is performed using the third exposure tool 200c. The suffixes a, b, and c are added to distinguish the exposure tools 200 from one another. The suffixes a, b, and c added to the individual information processing devices PU are also added to distinguish the individual information processing devices PU from one another.

[0049] The transfer conditions for the patterning 551 of the first layer 73L can be provided from the first exposure tool 200a to the first individual information processing device PUa or the shared information processing device IPE. The transfer conditions for the patterning 552 of the second layer 73U can be provided from the second exposure tool 200b to the second individual information processing device PUb or the shared information processing device IPE. The third exposure tool 200c that performs the transfer for the patterning 553 of the third layer 73T can calculate the relative position Δ of the first pattern P1 and the second pattern P2 in the detection step of the alignment step and provide it to the third individual information processing device PUc or the shared information processing device IPE. Alternatively, the third exposure tool 200c can provide an image of the mark 72 including the first pattern P1 and the second pattern P2 to the third individual information processing device PUc or the shared information processing device IPE. In this case, the third individual information processing device PUc or the shared information processing device IPE can calculate the relative position Δ of the first pattern P1 and the second pattern P2 based on the image. When the third individual information processing device PUc calculates the relative position Δ, the third individual information processing device PUc can provide the relative position Δ to the shared information processing device IPE.

[0050] The shared information processing apparatus IPE may determine an offset value to be set in at least one of the first exposure apparatus 200a and the second exposure apparatus 200b based on the relative position Δ. The offset value is determined so as to reduce an overlay error between the first layer 73L, the second layer 73U, and the third layer 73T. When setting an offset value in both the first exposure apparatus 200a and the second exposure apparatus 200b, the offset values ​​set in both apparatuses may have different values.

[0051] The offset value can be determined (adjusted) to adjust the patterning operation in a lithography apparatus (here, an exposure apparatus) according to, for example, the following mathematical formula A.

[0052] Formula A: OFS = Δ × β × α Here, Δ is the relative position between the first pattern P1 and the second pattern P2, α is the correction magnification, β is the device coefficient, and OFS is the offset value.

[0053] The shared information processing device IPE can operate to set the offset value OFS in at least one of the first exposure tool 200a and the second exposure tool 200b when the offset value OFS exceeds a reference value. The tool coefficient β may be a variable that is determined according to, for example, the position of the shot area, the order in which the shot area is exposed on the substrate, the order in which the substrate is exposed on the exposure tool, or the like.

[0054] The offset value OFS may be determined by the third individual information processing device PUc, and set in at least one of the first exposure tool 200a and the second exposure tool 200b by the third individual information processing device PUc.

[0055] 6 is a schematic diagram showing a second example of the operation of the lithography method including the patterning of the first, second and third layers. In the second example, the patterning 551 of the first layer 73L is performed using the first exposure tool 200a, and the patterning 552 of the second layer 73U and the patterning 553 of the third layer 73T are performed using the second exposure tool 200b.

[0056] The transfer conditions for the patterning 551 of the first layer 73L can be provided from the first exposure tool 200a to the first individual information processing device PUa or the shared information processing device IPE. The transfer conditions for the patterning 552 of the second layer 73U can be provided from the second exposure tool 200b to the second individual information processing device PUb or the shared information processing device IPE. The second exposure tool 200b that performs the transfer for the patterning 553 of the third layer 73T can calculate the relative position Δ of the first pattern P1 and the second pattern P2 in the detection step of the alignment step and provide it to the second individual information processing device PUb or the shared information processing device IPE. Alternatively, the second exposure tool 200b can provide an image of the mark 72 including the first pattern P1 and the second pattern P2 to the second individual information processing device PUb or the shared information processing device IPE. In this case, the second individual information processing device PUb or the shared information processing device IPE can calculate the relative position Δ of the first pattern P1 and the second pattern P2 based on the image. When the second individual information processing device PUb calculates the relative position Δ, the second individual information processing device PUb can provide the relative position Δ to the shared information processing device IPE.

[0057] The shared information processing device IPE can determine an offset value OFS to be set in at least one of the first exposure tool 200a and the second exposure tool 200b based on the relative position Δ. The offset value is determined so as to reduce an overlay error between the first layer 73L, the second layer 73U, and the third layer 73T. When setting an offset value OFS in both the first exposure tool 200a and the second exposure tool 200b, the offset values ​​OFS set in both tools can have different values.

[0058] The shared information processing device IPE can operate to set an offset value OFS in at least one of the first exposure tool 200a and the second exposure tool 200b when the offset value OFS exceeds a reference value. The offset value OFS may be determined by the second individual information processing device PUb and set in at least one of the first exposure tool 200a and the second exposure tool 200b by the second individual information processing device PUb.

[0059] 7 is a schematic diagram showing a third example of the operation of the lithography method including the patterning of the first, second and third layers. In the third example, the patterning 551 of the first layer 73L and the patterning 552 of the second layer 73U are performed using the first exposure tool 200a, and the patterning 553 of the third layer 73T is performed using the third exposure tool 200c.

[0060] The transfer conditions for the patterning 551 of the first layer 73L can be provided from the first exposure tool 200a to the first individual information processing device PUa or the shared information processing device IPE. The transfer conditions for the patterning 552 of the second layer 73U can be provided from the first exposure tool 200a to the first individual information processing device PUa or the shared information processing device IPE. The second exposure tool 200b that performs the transfer for the patterning 553 of the third layer 73T can calculate the relative position Δ of the first pattern P1 and the second pattern P2 in the detection step of the alignment step and provide it to the second individual information processing device PUb or the shared information processing device IPE. Alternatively, the second exposure tool 200b can provide an image of the mark 72 including the first pattern P1 and the second pattern P2 to the second individual information processing device PUb or the shared information processing device IPE. In this case, the second individual information processing device PUb or the shared information processing device IPE can calculate the relative position Δ of the first pattern P1 and the second pattern P2 based on the image. When the second individual information processing device PUb calculates the relative position Δ, the second individual information processing device PUb can provide the relative position Δ to the shared information processing device IPE.

[0061] The shared information processing device IPE can determine an offset value OFS to be set in the first exposure tool 200a based on the relative position Δ. The offset value is determined so as to reduce an overlay error among the first layer 73L, the second layer 73U, and the third layer 73T.

[0062] The shared information processing device IPE may operate to set the offset value OFS in the first exposure tool 200a when the offset value OFS exceeds a reference value. The offset value OFS may be determined by the second individual information processing device PUb and set in the first exposure tool 200a by the second individual information processing device PUb. Second embodiment The second embodiment will be described below. The exposure apparatus 200, the position measurement device 120, and the example of the arrangement of a plurality of shot areas of the substrate 83 described with reference to Figures 1A, 1B, 2(a), and 2(b) are used in the second embodiment. The configuration example of the mark 72 shown in Figures 3(a) and 3(b) is also used in the second embodiment.

[0063] As described in the first embodiment, the first pattern P1 and the second pattern P2 can be arranged so as to be simultaneously within the field of view of the position measuring device 120 (alignment scope). The mark 72 has a side surface as an alignment mark for aligning the master 31 for patterning the third layer 73T on the second layer 73U. The target of the alignment of the master 31 for patterning the third layer 73T may be the first layer 73L, the second layer 73U, or the first layer 73L and the second layer 73U. In the example of FIGS. 3(a) and (b), the first pattern P1 arranged on the first layer 73L includes, for example, four mark elements P1a, P1b, P1c, and P1d, and the second pattern P2 arranged on the second layer 73U includes four mark elements P2a, P2b, P2c, and P2d.

[0064] Only a part of the mark 72 may be used as an alignment mark for aligning the master 31 for patterning the third layer 73T. For example, only the first pattern P1 of the mark 72 may be used as an alignment mark for aligning the master 31 for patterning the third layer 73T, in which case the target of alignment of the master 31 is the first layer 73L. Alternatively, only the second pattern P2 of the mark 72 may be used as an alignment mark for aligning the master 31 for patterning the third layer 73T, in which case the target of alignment of the master 31 is the second layer 73U.

[0065] Alternatively, both the first pattern P1 and the second pattern P2 may be used as alignment marks for aligning the master 31 for patterning the third layer 73T. In this case, the target of alignment of the master 31 is the first layer 73B and the second layer 73U. Here, between the first pattern P1 and the second pattern P2, there may be a considerable amount of misalignment (amount of misalignment from a design value) that occurs when the second pattern P2 is formed. Therefore, if the position of the second pattern P2 is used to determine the position of the mark 72, an error may occur. Therefore, the control unit CU may perform a conversion process to convert the position of the second pattern P2 to the position of the second pattern P2 when the second pattern P2 is formed without having a misalignment with the first pattern P1. This conversion process may be performed based on relative position information indicating the amount of misalignment (relative position) between the first pattern P1 and the second pattern P2. This allows the second pattern P2 to be used as a part of the mark 72. When relative position information obtained by measurement does not yet exist, the relative position information determined based on the design information may be used for the conversion process, whereas when relative position information is obtained by measurement, the relative position information obtained by measurement may be used for the conversion process.

[0066] Here, the measured position of the second pattern P2 is (Bx, By), and the relative position information indicating the relative position (amount of misalignment) between the first pattern P1 and the second pattern P2 is (Cx, Cy). In this case, the position (Dx, Dy) of the second pattern P2 when the second pattern P2 is formed without misalignment with the first pattern P1, that is, the result of the conversion process, can be expressed as (Dx, Dy) = (Bx - Cx, By - Cy). Also, the position (Ex, Ey) of the mark 72 can be expressed as (Ex, Ey) = ((Ax + Dx) / 2, (Ay + Dy) / 2).

[0067] The mark 72 has an aspect of being an overlay measurement mark for detecting relative position information, that is, for measuring an overlay error. For example, the mark 72 can be used for a detection step of detecting relative position information of the first pattern P1 and the second pattern P2 in an alignment step of aligning the substrate 83 and the original 31 for patterning the third layer 73T. Alternatively, a detection step may be performed after the alignment step based on an image obtained by capturing the first pattern P1 and the second pattern P2 in an alignment step of aligning the substrate 83 and the original 31 for patterning the third layer 73T. The detection step may be performed in the exposure apparatus 200 or another apparatus to detect the relative position information of the first pattern P1 and the second pattern P2. Even in this case, a process of capturing an image of an overlay measurement mark in an overlay measurement apparatus different from the exposure apparatus after patterning the third layer, as in the conventional method, is not necessary. The other device may be an individual information processing device PU, which is a dedicated information processing device connected to the exposure apparatus 200, or a shared information processing device IPE, which is an information processing device shared by a plurality of exposure apparatuses 200. The individual information processing device PU may be understood as a component of the exposure apparatus 200.

[0068] Using mark 72 as an overlay metrology mark in addition to being used as an alignment mark is advantageous for detecting overlay errors while keeping costs down, and is also advantageous for reducing mark crowding on the scribe line or for reducing the width of the scribe line to improve yield.

[0069] In the mark 72, the first pattern P1 may include a plurality of first portions 301, and the second pattern P2 may include a plurality of second portions 302. In one aspect, the overlay measurement mark may have a feature that the second pattern P2 fits within a rectangular area 300 circumscribing the first pattern P1. In another aspect, in the mark 72, at least a portion of at least one of the plurality of second portions 302 may be disposed between at least two of the plurality of first portions 301.

[0070] In the alignment process, the position measurement device 120 may perform position measurement of the mark 72 for alignment of the original 31 with at least one of the first layer 73L and the second layer 73U. The position measurement device 120 may also perform a detection process for detecting the relative positions of the first pattern P1 and the second pattern P2 in the alignment process. Alternatively, the position measurement device 120 may provide an image of the mark 72 captured in the alignment process to another device (e.g., an individual information processing device PU or a shared information processing device IPE) to enable the detection process to be performed by the other device.

[0071] 8 illustrates a lithography method for performing exposure (exposure of a photoresist film on the third layer) for patterning a third layer 73T of a substrate 83 having a patterned first layer 73L and an unpatterned third layer 73T on a second layer 73U. Step S1401 is a registration step. In the registration step, a first pattern P1 and a second pattern P2, the relative position information of which is to be detected in a detection step (S1405, S1407) in an alignment step (S1405 to S1412), are registered with respect to an exposure tool 200 used for patterning the third layer 73T. The registration step may include a step of registering a mark (first pattern P1 and / or second pattern P2) used for alignment between the substrate 83 and the original 31 in the alignment step. In the registration process, marks arranged so as to simultaneously fall within the field of view of a position measurement device 120 (alignment scope) in the exposure apparatus 200 used for patterning the third layer 73T may be registered as the first pattern P1 and the second pattern P2. The registration process may be executed by the control unit CU, the individual information processing device PU, or the shared information processing device IPE.

[0072] In step S1402, the substrate 83 is loaded onto the substrate stage WS of the exposure apparatus 200 under the control of the control unit CU. In step S1403, calibration is performed under the control of the control unit CU. Specifically, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the position measurement device 120 based on the design coordinate position of the reference mark provided on the reference plate 39 in the coordinate system of the substrate stage WS. Next, the positional deviation of the reference mark relative to the optical axis of the position measurement device 120 is measured, and based on the positional deviation, the coordinate system of the substrate stage WS is reset so that the origin of the coordinate system of the substrate stage WS coincides with the optical axis of the position measurement device 120. Next, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the exposure light based on the design positional relationship between the optical axis of the position measurement device 120 and the optical axis of the projection optical system 32. Then, a TTL (through-the-lens) measurement system (not shown) measures the positional deviation of the reference mark relative to the optical axis of the exposure light via the projection optical system 32. Based on the above results, the baseline, which is the distance between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32, is determined.

[0073] In step S1404, pre-alignment of the substrate 83 may be performed under the control of the control unit CU. The pre-alignment may be performed, for example, using a scope (not shown) having a wider field of view than that of the position measurement device 120, thereby allowing the mark 72 to be accommodated within the field of view of the position measurement device 120. In steps S1405 to S1412, an alignment step (global alignment step) may be performed under the control of the control unit CU. Specifically, in step S1405, the mark 72 in a preset sample shot area among all the shot areas of the substrate 83 is imaged by the position measurement device 120. In step S1406, the control unit CU may calculate (determine) the position of the mark 72 based on the image of the mark 72 imaged in step S1405. The position of the mark 72 may be determined based on at least one of the position of the first pattern P1 and the position of the second pattern P2. When determining the position of the mark 72 based on both the position of the first pattern P1 and the position of the second pattern P2, the position of the mark 72 can be determined, for example, based on the position of the first pattern P1 and the position of the second pattern P2, as well as predetermined relative position information.

[0074] Steps S1405 and S1407 are detection steps in the alignment step, and in step S1407, the control unit CU may detect relative position information of the first pattern P1 and the second pattern P2 based on the image of the mark 72 captured in step S1405. Step S1407 may be performed in the individual information processing device PU or the shared information processing device IPE by transferring the image of the mark 72 captured in step S1405 to the individual information processing device PU or the shared information processing device IPE. The individual information processing device PU and the shared information processing device IPE may be configured, for example, as a computer having a processor and a memory. The individual information processing device PU and the shared information processing device IPE may load a computer program into the memory and operate according to the computer program to operate as a device having a target function. The individual information processing device PU and the shared information processing device IPE may be understood as an information processing device that executes an information processing method including step S1407 (detection step) based on the image of the mark 72 captured in step S1405. The information processing method may further include step S1401 (a registration step) and step S1414 (an adjustment step) described later.

[0075] In step S1408, the control unit CU may store the relative position information in a memory (not shown). The memory may be provided in the exposure apparatus 200 (for example, the control unit CU), or may be provided in one of the individual information processing device PU and the shared information processing device IPE. Step S1408 may be understood as a collection step of collecting relative position information. In step S1409, the control unit CU may determine the occurrence of an abnormality based on the relative position information collected in step S1408 (collection step). Step S1409 may be understood as a determination step of determining the occurrence of an abnormality. In one example, when an evaluation value of a relative position (overlay error) indicated by the relative position information exceeds a threshold, it can be determined that an abnormality has occurred. For example, when a variation such as a standard deviation of the relative positions obtained for each of a plurality of sample shot areas exceeds a threshold, it can be determined that an abnormality has occurred. When it is determined that an abnormality has occurred, a process for eliminating the abnormality, for example, a process for adjusting an offset value, can be performed.

[0076] In step 1410, the control unit CU determines whether or not steps S1405 to S1409 have been executed for all of a plurality of preset sample shot areas. Then, if there are any sample shot areas for which steps S1405 to S1409 have not been executed, the control unit CU executes steps S1405 to S1409 for those sample shot areas.

[0077] In step S1411, the control unit CU performs global alignment to calculate the arrangement of all shot areas of the substrate 83 based on the positions of the marks 72 calculated in step S1406 for a plurality of preset sample shot areas. In step S1412, the control unit CU aligns each shot area of ​​the substrate 83 with the original 31 based on the result of the global alignment in step S1411, and exposes the shot area (transfers the pattern of the original). At this time, the substrate 83 (shot area) and the original 31 may be aligned based on at least one of the position of the first pattern P1 and the position of the second pattern P2. In step S1413, the substrate 83 is unloaded under the control of the control unit CU. When processing is performed on a lot consisting of a plurality of substrates 83 as a unit, steps S1402 to S1413 may be performed on a plurality of substrates.

[0078] Step S1414 may be executed by the individual information processing device PU or the shared information processing device IPE. In step S1414, an adjustment step may be executed to adjust at least one of the lithography device used to pattern the first layer 73L and the lithography device used to pattern the second layer 73U based on the relative position information collected in step S1409. In the adjustment step, adjustment information for simply adjusting at least one of the lithography device used to pattern the first layer and the lithography device used to pattern the second layer may be generated based on the relative position information collected in step S1409. In this case, the lithography device may be adjusted based on the adjustment information at any timing. The adjustment step may be executed so that the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T is reduced. In the adjustment process, an offset value can be adjusted to adjust the patterning operation in at least one of the lithography apparatus used to pattern the first layer 73L and the lithography apparatus used to pattern the second layer 73U.

[0079] Here, the process of detecting the position of the mark 72 based on the positions of the first pattern P1 and the second pattern P2 in step S1406 will be described with reference to Fig. 10. Fig. 10(a) illustrates an optical image of the mark 72 formed on the imaging area (field of view of the position measurement instrument 120) of the imaging element 75 of the position measurement instrument 120. As the imaging element 75, a two-dimensional imaging element having an imaging area composed of a plurality of pixels arranged in the X direction and the Y direction can be used. The control unit CU can generate detection signals including waveforms corresponding to the first pattern P1 and the second pattern P2, respectively, based on the output (captured image) from the imaging element 75.

[0080] Fig. 10(b) illustrates a detection signal SW1 generated when an evaluation area for evaluating the position of the first pattern P1 in the X direction is set in an image obtained by imaging the mark 72 with the imaging element 75. Fig. 10(c) illustrates a detection signal SW2 of the second pattern P2 generated when an evaluation area for evaluating the position of the second mark P2 in the X direction is set in an image obtained by imaging the mark 72 with the imaging element 75.

[0081] The control unit CU may set the evaluation areas W1L, W1R so as to include the first portions P1XL, P1XR, which are parts of the first pattern P1, based on the design position of the mark 72. The control unit CU may set the evaluation areas W2L, W2R so as to include the second portions P2XL, P2XR, which are parts of the second pattern P2, based on the design position of the mark 72. The detection signals SW1, SW2 may be generated, for example, by integrating the signal intensity of each pixel in the set evaluation area in the Y direction. Note that, regarding the integration of the signal intensity of each pixel of the imaging element 75, it is preferable that the number of pixels to be integrated is set based on the dimensional information of the mark 72.

[0082] As illustrated in FIG. 10(b), the waveform S1L included in the detection signal SW1 corresponds to the signal intensity of the first portion P1XL of the first pattern P1, and the waveform S1R corresponds to the signal intensity of the first portion P1XR of the first pattern P1. The control unit CU obtains a measurement value X1L indicating the center position of the first portion P1XL from the waveform S1L, and obtains a measurement value X1R indicating the center position of the first portion P1XR from the waveform S1R. The control unit CU determines information indicating the position of the first pattern P1 in the X direction based on the measurement value XL1 and the measurement value XR1. FIG. 10(c) is a diagram showing the detection signal SW2 of the second pattern P2, and the control unit CU can determine information indicating the position of the second pattern P2 in the X direction by a similar measurement process. In addition, a similar measurement process is performed on the first pattern P1 and the second pattern P2 in the Y direction, and the control unit CU can determine information indicating the positions of the first pattern P1 and the second pattern P2 in the Y direction.

[0083] 9 exemplarily illustrates a procedure of a lithography method for forming a plurality of layers on a substrate according to the second embodiment. In step S501, a first layer 73L is formed on a substrate 83, and in step S502, the first layer 73L is patterned by a first patterning step including a first pattern transfer step by an exposure apparatus 200. At this time, a first pattern P1 is formed in the first layer 73L together with a first layer device pattern.

[0084] In step S503, a second layer 73U is formed on the first layer 73L of the substrate 83, and in step S504, the second layer 73U is patterned by a second patterning step including a second pattern transfer step by the exposure apparatus 200. At this time, a second pattern P2 is formed in the second layer 73U together with the device pattern of the second layer.

[0085] In step S505, a third layer 73T is formed on the second layer 73U of the substrate 83, and in step S506, the third layer 73T is patterned by a third patterning step including a third pattern transfer step by the exposure apparatus 200. At this time, a third pattern P3 is formed on the third layer 73T together with the device pattern of the third layer. In addition, in the third pattern transfer step in step S506, an alignment step is performed to align the original 31 with respect to the substrate 83. In this alignment step, the position of the mark 72 can be determined using the positions of both the first pattern P1 and the second pattern P2 constituting the mark 72 and the relative position information that has already been prepared. At this time, the position of the second pattern P2 obtained from the image of the mark 72 can be converted to the position of the second pattern P2 when the second pattern P2 is formed without having a positional deviation with respect to the first pattern P1 (conversion process). In addition, in this alignment step, a detection step of detecting relative position information of the first pattern P1 and the second pattern P2 based on the image of the mark 72 can be performed in order to obtain the latest relative position information.

[0086] In step S507, the relative position information obtained in step S506 is collected. In step S508, an adjustment step may be performed to adjust at least one of the lithography apparatus used to pattern the first layer and the lithography apparatus used to pattern the second layer based on (the evaluation result of) the relative position information collected in step S507.

[0087] In step S508, a fourth layer is formed on the third layer 73T of the substrate 83, and in step S509, the fourth layer is patterned by a fourth patterning step including a fourth pattern transfer step by the exposure apparatus 200. At this time, a fourth pattern is formed on the fourth layer together with the device pattern of the fourth layer. In addition, in the fourth pattern transfer step in step S510, for example, an alignment step is performed in which the original 31 is aligned with the substrate 83 using the mark 72 including the first pattern P1 of the first layer and the second pattern P2 of the second layer as an alignment mark. In addition, in this alignment step, a second detection step may be performed in which position information of the first pattern P1 of the first layer, the second pattern P2 of the second layer, and the third pattern of the third layer is detected.

[0088] In step S511, the position information obtained in step S510 is collected. In step S512, the relative position information (relative position information of the first pattern P1 and the second pattern P2) used in step S506 may be corrected based on (the result of evaluating) the position information collected in step S511 obtained in step S510 (second detection step). When the lithography method shown in FIG. 5 is performed on the next substrate (second substrate), the corrected relative position information is used in step S506. The correction of the relative position information may be performed so that the overlay error of the third layer with respect to the first and second layers is reduced.

[0089] In the second embodiment, an alignment step is performed with the first layer or the second layer as a target layer based on the position of the mark 72 including the first pattern P1 and the second pattern P2, and a detection step is performed to detect the relative positions of the marks P1 and P2 in this alignment step. In the detection step, the relative positions of the first pattern P1 of the first layer, the second pattern P2 of the second layer, and the third pattern P3 of the third layer may be detected as described below.

[0090] Fig. 11 shows an example in which the first patterns P1-2 and P1-3 of the first layer, the second pattern P2 of the second layer, and the third pattern P3 of the third layer are contained in the imaging area of ​​the imaging element 75. In the example of Fig. 11, optical images of the first mark 72 and the second mark 92 are contained in the imaging area of ​​the imaging element 75, the first mark 72 includes the first pattern P1-2 and the second pattern P2, and the second mark 92 includes the first pattern P1-3 and the third pattern P3. (Article manufacturing method) Hereinafter, an article manufacturing method for manufacturing an article using the lithography method of the first or second embodiment will be described by way of example. The article may be, for example, a semiconductor device, a display device, a microdevice (for example, MEMS), or other device. The article manufacturing method may include a lithography process for forming a plurality of layers (first layer 73L, second layer 73U, third layer 73T) by the above-mentioned lithography method, and a processing process for processing a substrate that has been subjected to the lithography process to obtain an article. The processing process may include, for example, an etching process, a heat treatment process, a film formation process, a dicing process, a sealing process, and the like.

[0091] The present specification and drawings include the following disclosure. (Item 1) 1. A lithography method of forming a plurality of layers over a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting a relative position of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; an adjustment step of adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the results obtained in the detection step; 13. A lithography method comprising: (Item 2) The adjusting step is performed such that an overlay error between the first layer, the second layer, and the third layer is reduced. 2. The lithography method according to item 1, (Item 3) In the alignment step, alignment between the substrate and the original is performed based on at least one of a position of the first pattern and a position of the second pattern. 3. The lithography method according to item 1 or 2, (Item 4) In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer is adjusted. 4. The lithography method according to any one of items 1 to 3, (Item 5) The method further includes a registration step of registering the first pattern and the second pattern, the relative positions of which are to be detected in the detection step, with respect to a lithography apparatus used for patterning the third layer. 5. The lithography method according to any one of items 1 to 4, (Item 6) the registration step includes a step of registering a mark used for alignment between the substrate and the original in the alignment step; 6. The lithography method according to item 5, (Item 7) In the registration step, marks arranged so as to be simultaneously within a field of a position detector in a lithography apparatus used for patterning the third layer are registered as the first pattern and the second pattern. 7. The lithography method according to item 5 or 6, (Item 8) the first pattern and the second pattern are marks arranged so as to be simultaneously within a field of view of a position detector in a lithography apparatus used for patterning the third layer; 7. The lithography method according to any one of items 1 to 6, (Item 9) the lithography apparatus used for patterning the first layer and the lithography apparatus used for patterning the second layer are different from each other; 9. The lithography method according to any one of items 1 to 8, (Item 10) the lithography apparatus used for patterning the first layer and the lithography apparatus used for patterning the second layer are the same lithography apparatus; 9. The lithography method according to any one of items 1 to 8, (Item 11) A lithography step of forming a plurality of layers by the lithography method according to any one of items 1 to 10; a processing step for processing the substrate that has undergone the lithography step to obtain an article; A method for manufacturing an article, comprising: (Item 12) 1. An information processing method for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting positions of the first pattern and the second pattern based on images obtained by capturing images of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; an adjustment step of generating adjustment information for adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the results obtained in the detection step; 13. An information processing method comprising: (Item 13) The adjusting step is performed such that an overlay error between the first layer, the second layer, and the third layer is reduced. 13. The information processing method according to item 12, (Item 14) In the alignment step, alignment between the substrate and the original is performed based on at least one of a position of the first pattern and a position of the second pattern. 14. The information processing method according to item 12 or 13, (Item 15) the adjustment information includes an offset value for adjusting a patterning operation in at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer. 15. The information processing method according to any one of items 12 to 14. (Item 16) The method further includes a registration step of registering the first pattern and the second pattern, the relative positions of which are to be detected in the detection step, with respect to a lithography apparatus used for patterning the third layer. 16. The information processing method according to any one of items 12 to 15, (Item 17) the registration step includes a step of registering a mark used for alignment between the substrate and the original in the alignment step; 17. The information processing method according to item 16, (Item 18) In the registration step, marks arranged so as to be simultaneously within a field of a position detector in a lithography apparatus used for patterning the third layer are registered as the first pattern and the second pattern. 18. The information processing method according to item 16 or 17, (Item 19) the first pattern and the second pattern are marks arranged so as to be simultaneously within a field of view of a position detector in a lithography apparatus used for patterning the third layer; 19. The information processing method according to any one of items 12 to 18, (Item 20) the lithography apparatus used for patterning the first layer and the lithography apparatus used for patterning the second layer are different from each other; 20. The information processing method according to any one of items 12 to 19, (Item 21) the lithography apparatus used for patterning the first layer and the lithography apparatus used for patterning the second layer are the same lithography apparatus; 20. The information processing method according to any one of items 12 to 19, (Item 22) 22. A computer program for causing a computer to execute the information processing method according to any one of items 12 to 21. (Item 23) An information processing apparatus for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the apparatus comprising: a detection step of detecting positions of the first pattern and the second pattern based on images obtained by capturing images of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; an adjustment step of generating adjustment information for adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the results obtained in the detection step; 13. An information processing device comprising: (Item 24) 1. A lithography method of forming a plurality of layers over a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting relative position information indicating a relative position between the first pattern and the second pattern in an alignment step between the substrate and an original for patterning the third layer; a collection step of collecting the relative position information obtained in the detection step; 13. A lithography method comprising: (Item 25) In the alignment step, alignment between the substrate and the original is performed based on at least one of a position of the first pattern and a position of the second pattern. 25. The lithography method according to item 24, (Item 26) and further comprising an adjustment step of adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the relative position information collected in the collection step. 26. The lithography method according to item 24 or 25, (Item 27) In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer is adjusted. 27. The lithography method according to item 26, (Item 28) The method further includes a registration step of registering the first pattern and the second pattern, the relative position information of which is to be detected, with respect to a lithography apparatus used for patterning the third layer. 28. The lithography method according to any one of items 24 to 27, (Item 29) the registration step includes a step of registering a mark used for alignment between the substrate and the original in the alignment step; 6. The lithography method according to item 5, (Item 30) In the registration step, marks arranged so as to be simultaneously within a field of view of a position measurement device in a lithography apparatus used for patterning the third layer are registered as the first pattern and the second pattern. 29. The lithography method according to item 28, (Item 31) the first pattern and the second pattern are marks arranged so as to be simultaneously within a field of view of a position measuring device in a lithography apparatus used for patterning the third layer; 31. The lithography method according to any one of items 24 to 30, characterized in that (Item 32) The method further includes a determination step of determining whether an abnormality has occurred based on the relative position information collected in the collection step. 32. The lithography method according to any one of items 24 to 31, characterized in that (Item 33) In the alignment step, alignment between the substrate and the original is performed based on both a position of the first pattern and a position of the second pattern. 33. The lithographic method according to any one of items 24 to 32, characterized in that (Item 34) The method further includes a forming step of forming a fourth layer on the third layer using a second master, the third layer includes a third pattern; the forming step includes a second detection step of detecting positional information of the first pattern, the second pattern, and the third pattern when aligning the substrate and the second original; The alignment step is performed on a second substrate in addition to the substrate, In the alignment step for the second substrate, alignment between the second substrate and the original is performed based on both the position of the first pattern of the second substrate and the position of the second pattern of the second substrate, and on the position information obtained in the second detection step for the substrate. 34. The lithography method according to item 33, (Item 35) A lithography step of forming a plurality of layers by the lithography method according to any one of items 24 to 34; a processing step for processing the substrate that has undergone the lithography step to obtain an article; A method for manufacturing an article, comprising: (Item 36) 1. An information processing method for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting relative position information indicating relative positions of the first pattern and the second pattern based on an image obtained by capturing an image of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; a collection step of collecting information obtained in the detection step; 13. An information processing method comprising: (Item 37) In the alignment step, alignment between the substrate and the original is performed based on at least one of a position of the first pattern and a position of the second pattern. 37. The information processing method according to item 36, (Item 38) and generating adjustment information for adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the information collected in the collection step. 38. The information processing method according to item 36 or 37, (Item 39) In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer is adjusted. 39. The information processing method according to item 38, (Item 40) The method further includes a registration step of registering the first pattern and the second pattern, the relative position information of which is to be detected, with respect to a lithography apparatus used for patterning the third layer. 40. The information processing method according to any one of items 36 to 39, (Item 41) the registration step includes a step of registering a mark used for alignment between the substrate and the original in the alignment step; 41. The information processing method according to item 40, (Item 42) In the registration step, marks arranged so as to be simultaneously within a field of view of a position measurement device in a lithography apparatus used for patterning the third layer are registered as the first pattern and the second pattern. 42. The information processing method according to item 40 or 41, (Item 43) the first pattern and the second pattern are marks arranged so as to be simultaneously within a field of view of a position measuring device in a lithography apparatus used for patterning the third layer; 43. The information processing method according to any one of items 36 to 42, (Item 44) The method further includes a determination step of determining whether an abnormality has occurred based on the information collected in the collection step. 44. The information processing method according to any one of items 36 to 43, (Item 45) In the alignment step, alignment between the substrate and the original is performed based on both a position of the first pattern and a position of the second pattern. 45. The information processing method according to item 44, (Item 46) the third layer includes a third pattern, and a forming step of forming a fourth layer on the third layer using a second original further includes a second detection step of detecting position information of the first pattern, the second pattern, and the third pattern when aligning the substrate with the second original; The alignment step is performed on a second substrate in addition to the substrate, In the alignment step for the second substrate, alignment between the second substrate and the original is performed based on both the position of the first pattern on the second substrate and the position of the second pattern on the second substrate, and on the position information obtained in the second detection step for the substrate. 46. ​​The information processing method according to item 45, (Item 47) 47. A computer program for causing a computer to execute the information processing method according to any one of items 36 to 46. (Item 48) An information processing apparatus for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the apparatus comprising: a detection step of detecting relative position information indicating relative positions of the first pattern and the second pattern based on an image obtained by capturing an image of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; a collection step of collecting information obtained in the detection step; 2. An information processing device comprising:

[0092] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0093] 31: master, 73L: first layer, 73U: second layer, 73T: third layer, P1: first pattern, P2: second pattern, 72: mark, 83: substrate

Claims

1. 1. A lithography method for forming a plurality of layers over a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting relative position information indicating relative positions of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; a collection step of collecting the relative position information obtained in the detection step; 13. A lithography method comprising:

2. In the alignment step, alignment between the substrate and the original is performed based on at least one of a position of the first pattern and a position of the second pattern.

2. A lithography method according to claim 1.

3. and further comprising an adjustment step of adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the relative position information collected in the collection step.

2. A lithography method according to claim 1.

4. In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer is adjusted.

4. A lithography method according to claim 3.

5. The adjusting step is performed such that an overlay error between the first layer, the second layer, and the third layer is reduced.

4. A lithography method according to claim 3.

6. a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer are different from each other; 4. A lithography method according to claim 3.

7. a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer are the same lithography apparatus; 4. A lithography method according to claim 3.

8. a registration step of registering the first pattern and the second pattern, the relative position information of which is to be detected, with respect to a lithography apparatus used for patterning the third layer; 2. A lithography method according to claim 1.

9. the registration step includes a step of registering a mark used for alignment between the substrate and the original in the alignment step; A lithographic method according to claim 8.

10. In the registration step, marks arranged so as to be simultaneously within a field of view of a position measuring device in a lithography apparatus used for patterning the third layer are registered as the first pattern and the second pattern. A lithographic method according to claim 8.

11. the first pattern and the second pattern are marks arranged so as to be simultaneously within a field of view of a position measuring device in a lithography apparatus used for patterning the third layer; 2. A lithography method according to claim 1.

12. The method further includes a determination step of determining whether an abnormality has occurred based on the relative position information collected in the collection step.

2. A lithography method according to claim 1.

13. In the alignment step, alignment between the substrate and the original is performed based on both a position of the first pattern and a position of the second pattern.

2. A lithography method according to claim 1.

14. The method further includes a forming step of forming a fourth layer on the third layer using a second master; the third layer includes a third pattern; the forming step includes a second detection step of detecting positional information of the first pattern, the second pattern, and the third pattern when aligning the substrate and the second original; The alignment step is performed on a second substrate in addition to the substrate, In the alignment step for the second substrate, alignment between the second substrate and the original is performed based on both the position of the first pattern of the second substrate and the position of the second pattern of the second substrate, and on the position information obtained in the second detection step for the substrate. A lithographic method according to claim 13.

15. 1. A lithography method for forming a plurality of layers over a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting a relative position of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; an adjustment step of adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the results obtained in the detection step; 13. A lithography method comprising:

16. A lithography step of forming a plurality of layers by the lithography method according to any one of claims 1 to 15; a processing step for processing the substrate that has undergone the lithography step to obtain an article; A method for manufacturing an article, comprising:

17. 1. An information processing method for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting relative position information indicating relative positions of the first pattern and the second pattern based on images obtained by capturing images of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; a collection step of collecting information obtained in the detection step; 13. An information processing method comprising:

18. 1. An information processing method for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the method comprising: a detection step of detecting positions of the first pattern and the second pattern based on images obtained by capturing images of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; an adjustment step of generating adjustment information for adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the results obtained in the detection step; 13. An information processing method comprising:

19. A computer program for causing a computer to execute the information processing method according to claim 17 or 18.

20. An information processing apparatus for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the apparatus comprising: a detection step of detecting relative position information indicating relative positions of the first pattern and the second pattern based on images obtained by capturing images of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; a collection step of collecting information obtained in the detection step; 2. An information processing device comprising:

21. An information processing apparatus for processing information obtained in a lithography method for forming a plurality of layers on a substrate, the plurality of layers including a first layer including a first pattern, a second layer including a second pattern, and a third layer, the apparatus comprising: a detection step of detecting positions of the first pattern and the second pattern based on images obtained by capturing images of the first pattern and the second pattern in an alignment step between the substrate and the original for patterning the third layer; an adjustment step of generating adjustment information for adjusting at least one of a lithography apparatus used to pattern the first layer and a lithography apparatus used to pattern the second layer based on the results obtained in the detection step; 2. An information processing device comprising:

Images