Lead frame with film, method for manufacturing lead frame with film, and semiconductor device

Abstract

To provide a lead frame with a film that can obtain high flatness in the film, and a method for manufacturing a lead frame with a film, and a semiconductor device.SOLUTION: A lead frame with a film includes a lead frame and a film attached to the lead frame, the lead frame includes a ring-shaped frame portion and a plurality of lead portions extending from the frame portion to the inside of the frame portion, each of the lead portions having a first portion having a connecting portion connected to the frame portion, a second portion connected to the first portion and farther from the connecting portion than the first portion, and a third portion connected to the second portion and farther from the connecting portion than the second portion, the first portion has a first surface in contact with the film, the second portion has a second surface connected to the first surface and farther from the film, and the third portion has a third surface connected to the second surface and in contact with the film.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a lead frame with a film, a method for manufacturing a lead frame with a film, and a semiconductor device. [Background technology]

[0002] Lead frames are used in the manufacture of semiconductor devices such as QFN (quad flat non-leaded package). In particular, in saw-type QFN, a film (sealing tape) is attached to the back surface of the lead frame when sealing the semiconductor element and the lead frame with sealing resin to prevent the sealing resin from leaking out to the back surface of the lead frame. In addition, the back surface of the lead frame is partially half-etched, and the half-etched portion is sealed from the back surface side with sealing resin. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2005-294443 A [Patent Document 2] JP 2000-012758 A Summary of the Invention [Problem to be solved by the invention]

[0004] In a conventional lead frame with a film attached (a lead frame with a film), if the back surface of the lead frame is widely half-etched, the tension acting on the film is likely to be weak, and the flatness of the film is reduced. When the flatness of the film is reduced, the film may wrinkle or stick to the half-etched part of the lead frame. In addition, when the flatness of the film is reduced, the sealing performance of a semiconductor device such as a QFN may be reduced.

[0005] An object of the present disclosure is to provide a lead frame with a film that can provide a film with high flatness, a method for manufacturing a lead frame with a film, and a semiconductor device. [Means for solving the problem]

[0006] According to one embodiment of the present disclosure, there is provided a lead frame with a film, comprising: a lead frame; and a film attached to the lead frame, the lead frame having a ring-shaped frame portion and a plurality of lead portions extending from the frame portion to an inside of the frame portion, each of the lead portions having a first portion having a connecting portion connected to the frame portion, a second portion connected to the first portion and farther from the connecting portion than the first portion, and a third portion connected to the second portion and farther from the connecting portion than the second portion, the first portion having a first surface in contact with the film, the second portion having a second surface connected to the first surface and farther from the film, and the third portion having a third surface connected to the second surface and in contact with the film. Effect of the Invention

[0007] According to the disclosed technique, a high degree of flatness can be obtained in the film. [Brief description of the drawings]

[0008] [Figure 1] 1 is a diagram showing an outline of a lead frame in a lead frame with a film according to a first embodiment. FIG. [Diagram 2] FIG. 2 is an enlarged view of a part of FIG. [Diagram 3] 1A to 1C are cross-sectional views (part 1) illustrating the method for manufacturing a lead frame with a film according to the first embodiment. [Figure 4] 4 is a cross-sectional view (part 2) showing the method for manufacturing the lead frame with a film according to the first embodiment. FIG. [Diagram 5] 1A to 1C are cross-sectional views (part 1) illustrating a method for manufacturing a semiconductor device using a lead frame with a film according to a first embodiment. [Figure 6]4 is a cross-sectional view (part 2) showing the method for manufacturing a semiconductor device using the lead frame with a film according to the first embodiment. FIG. [Figure 7] 1A to 1C are top views showing a method for manufacturing a semiconductor device using a lead frame with a film according to a first embodiment. [Figure 8] 1 is a bottom view showing a semiconductor device manufactured using a lead frame with a film according to a first embodiment. FIG. [Figure 9] FIG. 11 is a cross-sectional view showing a lead frame with a film according to a reference example. [Figure 10] 10A to 10C are cross-sectional views showing intermediate steps in a method for manufacturing a semiconductor device using a lead frame with a film according to a reference example. [Figure 11] 6A to 6C are cross-sectional views showing a method for manufacturing a semiconductor device using a lead frame with a film according to a second embodiment. [Figure 12] 11A and 11B are a top view and a bottom view showing a lead frame with a film according to a third embodiment. [Figure 13] FIG. 11 is a cross-sectional view showing a lead frame with a film according to a third embodiment. [Figure 14] 13A and 13B are a top view and a bottom view showing a semiconductor device manufactured using a lead frame with a film according to a third embodiment. [Figure 15] 11 is a cross-sectional view showing a semiconductor device manufactured using a lead frame with a film according to a third embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configuration may be denoted by the same reference numerals to avoid repetitive description. In the following description, an XYZ orthogonal coordinate system is used, and the +Z side may be referred to as the upper side, top side, or top, and the -Z side may be referred to as the lower side, bottom side, or bottom, as viewed from any point. The lower surface may be referred to as one surface or bottom surface, and the upper surface may be referred to as the other surface or top surface. However, this coordinate system is defined for the purpose of explanation, and does not limit the posture of the lead frame with film and the semiconductor device. The lead frame and the semiconductor device may be used upside down or may be arranged at any angle. In addition, a planar view refers to viewing an object from the normal direction of one surface of the lead frame or the semiconductor device, and a planar shape refers to the shape of the object viewed from the normal direction of one surface of the lead frame or the semiconductor device.

[0010] (First embodiment) First, a first embodiment will be described. The first embodiment relates to a lead frame with a film.

[0011] [Structure of lead frame with film] The structure of the lead frame with a film according to the first embodiment will be described. Fig. 1 is a diagram showing an outline of the lead frame in the lead frame with a film according to the first embodiment. Fig. 2 is a diagram showing an enlarged portion of Fig. 1. Fig. 2(a) is a bottom view, and Fig. 2(b) corresponds to a cross-sectional view taken along line IIb-IIb in Fig. 2(a).

[0012] As shown in Fig. 2(b), the lead frame 100 with a film according to the first embodiment has a lead frame 1 and a film 5 attached to the lead frame 1. The lead frame 1 is a lead frame on which a semiconductor element is mounted on the upper surface and is covered with a sealing resin to form a semiconductor device. A film 5 is attached to the lower surface (one surface) of the lead frame 1. The film 5 is omitted in Fig. 2(a).

[0013] As shown in FIG. 1, the lead frame 1 has a plurality of singulation regions 110. For example, the singulation region 110 has a rectangular planar shape. FIG. 2 shows one of the singulation regions 110. Each singulation region 110 has an annular frame portion 10 and a plurality of lead portions 20. The frame portion 10 is shared between two adjacent singulation regions 110. Each lead portion 20 extends from the frame portion 10 to the inside of the frame portion 10. The frame portion 10 is formed in a rectangular shape, and the plurality of lead portions 20 extend from each of the four sides of the frame portion 10 to the inside of the frame portion 10. For example, copper (Cu), a Cu alloy, a 42 alloy, etc. can be used as the material of the lead frame 1. The thickness of the lead frame 1 can be, for example, about 100 μm to 300 μm. The lead frame 1 does not need to have a die pad portion.

[0014] The frame 10 has one surface 10A (lower surface) and the other surface 10B (upper surface) opposite the one surface 10A. A part of the one surface 10A may be in contact with the film 5. The part of the one surface 10A in contact with the film 5 may be parallel to the XY plane. The entire one surface 10A may be separated from the film 5. A part or the whole of the remainder of the one surface 10A (the part not in contact with the film 5) may be concave. The other surface 10B may be parallel to the XY plane.

[0015] Each of the lead portions 20 has a first portion 21, a second portion 22, and a third portion. The first portion 21 has a connecting portion 15 connected to the frame portion 10. The second portion 22 is connected to the first portion 21 and is farther from the connecting portion 15 than the first portion 21. The third portion 23 is connected to the second portion 22 and is farther from the connecting portion 15 than the second portion 22.

[0016] The first portion 21 has one surface 21A (lower surface) and the other surface 21B (upper surface) opposite to the one surface 21A. The one surface 21A is in contact with the film 5. The one surface 21A is continuous with the one surface 10A, and the other surface 21B is continuous with the other surface 10B.

[0017] The second portion 22 has one surface 22A (lower surface) and the other surface 22B (upper surface) opposite to the one surface 22A. The one surface 22A is continuous with the one surface 21A, and the other surface 22B is continuous with the other surface 21B. The one surface 22A is separated from the film 5. A part or the whole of the one surface 22A may be a concave surface.

[0018] The third portion 23 has one surface 23A (lower surface) and the other surface 23B (upper surface) opposite to the one surface 23A. The one surface 23A is continuous with the one surface 22A, and the other surface 23B is continuous with the other surface 22B. The one surface 23A is in contact with the film 5.

[0019] One surface 21A and one surface 23A are flush with each other. One surface 21A and one surface 23A may be parallel to the XY plane. The other surface 10B, the other surface 21B, the other surface 22B, and the other surface 23B are flush with each other. The other surface 10B, the other surface 21B, the other surface 22B, and the other surface 23B may be parallel to the XY plane. A portion of one surface 10A that contacts the film 5 may be flush with one surface 21A and one surface 23A, or may be parallel to the XY plane. One surface 21A is an example of a first surface, one surface 22A is an example of a second surface, and one surface 23A is an example of a third surface.

[0020] The lead frame 1 may further have a plating layer 91 on the other surface 21B, the other surface 22B, and a part of the other surface 23B of the lead portion 20. The plating layer 91 is used for connecting a bonding wire. The plating layer 91 may include, for example, a silver (Ag) plating layer.

[0021] The film 5 has a base material of, for example, polyimide, and is attached to the lead frame 1 using a silicone adhesive or the like. The film 5 is also called a sealing tape.

[0022] [Manufacturing method of lead frame with film] Next, a method for manufacturing the lead frame 100 with a film according to the first embodiment will be described. Figures 3 and 4 are cross-sectional views showing the method for manufacturing the lead frame with a film according to the first embodiment.

[0023] First, as shown in Fig. 3(a), a metal plate 101 made of metal and having a predetermined shape is prepared. The metal plate 101 is a member to be cut and diced into individual pieces for each individualization region 110. The material of the metal plate 101 may be, for example, copper, a copper alloy, a 42 alloy, or the like. The thickness of the metal plate 101 may be, for example, about 100 µm to 300 µm.

[0024] 3(b), a photosensitive resist 72 is formed on one surface 101A of the metal plate 101, and a photosensitive resist 71 is formed on the other surface 101B of the metal plate 101. The resists 71 and 72 may be formed by, for example, applying and drying a resist liquid, or by attaching a resist film. As the resists 71 and 72, for example, a dry film resist such as an epoxy resin or an acrylic resin, an electrodeposition resist, or the like may be used.

[0025] Next, as shown in FIG. 3(c), the resist 71 is exposed and developed to form a coating pattern 71S and an opening 71T in the resist 71, and the resist 72 is exposed and developed to form a coating pattern 72S and an opening 72T in the resist 72.

[0026] The covering pattern 71S is a portion for forming the frame portion 10 and the lead portions 20 on the metal plate 101, and covers a portion of the other surface 101B of the metal plate 101 where the other surfaces 10B, 21B, 22B, and 23B of the lead frame 1 are to be formed. The opening 71T is a portion for forming an opening in the metal plate 101, and the remaining portion of the other surface 101B of the metal plate 101 is exposed from the opening 71T.

[0027] The covering pattern 72S is a portion for forming a part of the frame 10 and the first and third portions 21 and 23 of the lead portion 20 on the metal plate 101, and covers a portion of one surface 101A of the metal plate 101 where a part of one surface 10A of the lead frame 1 is to be formed and a portion of one surface 21A and 23A is to be formed. The opening 72T is a portion for forming the remaining portion of the frame 10, the second portion 22 of the lead portion 20, and an opening on the metal plate 101, and the remaining portion of one surface 101A of the metal plate 101 is exposed from the opening 72T.

[0028] Next, as shown in FIG. 4(a), half etching (e.g., wet etching) of the metal plate 101 is performed from one surface 101A side and the other surface 101B side of the metal plate 101 using the resists 71 and 72 as an etching mask. When the metal plate 101 is made of copper, for example, an aqueous solution of ferric chloride or cupric chloride can be used for half etching the metal plate 101. As a result of half etching the metal plate 101, a lead frame 1 having a frame portion 10 and lead portions 20 is formed from the metal plate 101. After half etching the metal plate 101, the resists 71 and 72 are removed. The resists 71 and 72 can be stripped off, for example, with a stripping solution.

[0029] 4(b), a film 5 is attached to the lead frame 1. The film 5 is attached to the lead frame 1 so as to be in contact with one surface 21A and one surface 23A.

[0030] In this manner, the lead frame 100 with a film can be manufactured.

[0031] 4(b), a plating layer 91 may be formed on the lead frame 1 before the film 5 is attached. The plating layer 91 can be formed by, for example, an electrolytic plating method using the lead frame 1 as a power supply path.

[0032] [Method of manufacturing semiconductor device] Next, a method for manufacturing a semiconductor device using the leadframe 100 with a film according to the first embodiment will be described. Figures 5 to 6 are cross-sectional views showing the method for manufacturing a semiconductor device using the leadframe 100 with a film according to the first embodiment. Figure 7 is a top view showing the method for manufacturing a semiconductor device using the leadframe 100 with a film according to the first embodiment.

[0033] First, as shown in Fig. 5(a) and Fig. 7(a), a lead frame 100 with a film according to the first embodiment is prepared, and a semiconductor element 150 is mounted on the upper surface of the lead portion 20 in each singulation region 110. The semiconductor element 150 has a base portion 151 and a plurality of electrodes 152 provided on the upper surface of the base portion 151. At this time, the upper surface of the lead portion 20 and the lower surface of the base portion 151 are joined with an adhesive 155. As the adhesive 155, a die attach film, silver paste, solder, or the like is used. The semiconductor element 150 is an example of an electronic component.

[0034] Next, as shown in FIG. 5(b), the plating layer 91 and the electrode 152 are electrically connected using a bonding wire 92.

[0035] Next, as shown in FIG. 5(c) and FIG. 7(b), the semiconductor element 150 and the bonding wires 92 are sealed with the sealing resin 80. At this time, the semiconductor element 150 and the bonding wires 92 are sealed with a single sealing resin 80 common to the plurality of singulated regions 110. The upper surface and side surface of the lead frame 1 are also sealed with the sealing resin 80. The sealing resin 80 is also filled between one surface 22A of the second portion 22 of the lead portion 20 and the film 5. The sealing resin 80 is also filled between a part of one surface 10A of the frame portion 10 and the film 5. On the other hand, since one surface 21A of the first portion 21 and one surface 23A of the third portion 23 of the lead portion 20 are in contact with the film 5, the sealing resin 80 is not filled between one surface 21A of the first portion 21 and one surface 23A of the third portion 23 and the film 5. As the sealing resin 80, for example, a so-called mold resin containing a filler in an epoxy resin can be used. The sealing resin 80 can be formed by, for example, a transfer molding method or a compression molding method. The sealing resin 80 has one main surface 80A (lower surface) and the other main surface 80B (upper surface) opposite to the one main surface 80A. The one main surface 80A may be flush with a portion of the one surface 10A that contacts the film 5, the one surface 21A, and the one surface 23A. The one main surface 80A and the other main surface 80B may be parallel to the XY plane.

[0036] Next, as shown in FIG. 6(a), the film 5 is peeled off from the lead frame 1 and the sealing resin 80.

[0037] 6(b), the first portion 21 of the lead portion 20 is cut using, for example, a cutting blade 18. At this time, the portion of the sealing resin 80 covering the first portion 21 is also cut. As a result, the frame portion 10 is removed from the lead portion 20.

[0038] As a result of the cutting, a semiconductor device 120 is obtained as shown in Fig. 6(c). Fig. 8 is a bottom view showing a semiconductor device manufactured using the lead frame with a film according to the first embodiment. Fig. 6(c) corresponds to a cross-sectional view taken along line VIc-VIc in Fig. 8.

[0039] As shown in FIG. 6(c) and FIG. 8, the semiconductor device 120 has a semiconductor element 150, a plurality of lead portions 20, and a sealing resin 80. The semiconductor element 150 is electrically connected to the plurality of lead portions 20 via bonding wires 92. The sealing resin 80 seals the semiconductor element 150 and the bonding wires 92. The sealing resin 80 has one main surface 80A (lower surface), the other main surface 80B (upper surface) opposite to the one main surface 80A, and a side surface 80C connecting the one main surface 80A and the other main surface 80B. The first portion 21 of the lead portion 20 has an end surface 21C exposed from the side surface 80C of the sealing resin 80. One surface 21A of the first portion 21 and one surface 23A of the third portion 23 are exposed from one main surface 80A of the sealing resin 80. One principal surface 80A is an example of a first principal surface, and the other principal surface 80B is an example of a second principal surface.

[0040] Moreover, the semiconductor element 150 has one main surface 150A and the other main surface 150B opposite to the one main surface 150A. One main surface 150A is joined to the lead portion 20, and an electrode 152 is provided on the other main surface 150B. At least a part of one main surface 150A and at least a part of the other main surface 150B are covered with a sealing resin 80. One main surface 150A is an example of a third main surface, and the other main surface 150B is an example of a fourth main surface.

[0041] As described above, in the lead frame 100 with a film according to the first embodiment, the lead portion 20 has the first portion 21, the second portion 22, and the third portion 23, and not only one surface 21A of the first portion 21 but also one surface 23A of the third portion 23 contacts the film 5. For this reason, the film 5 can be attached to the lead frame 1 with high flatness.

[0042] Here, for comparison, a reference example will be described. Fig. 9 is a cross-sectional view showing a lead frame with a film according to the reference example. Fig. 10 is a cross-sectional view showing a process in the middle of a method for manufacturing a semiconductor device using the lead frame with a film according to the reference example.

[0043] The lead frame 100X with a film according to the reference example differs from the first embodiment mainly in that the lead portion 20 does not include the third portion 23, and the second portion 22 extends to the position of the third portion 23 in the first embodiment. When manufacturing the lead frame 100X with a film, the film 5 is not supported in the area surrounded by one surface 21A of the first portions 21 in each singulation region 110, and the flatness of the film 5 is likely to be reduced. For this reason, as shown in FIG. 9(a), wrinkles may occur in the film 5, or as shown in FIG. 9(b), the film 5 may be stuck to one surface 22A of the second portion 22.

[0044] When a semiconductor device is manufactured using the lead frame 100X with a film, if wrinkles occur in the film 5, unevenness following the wrinkles may be formed on one main surface 80A of the sealing resin 80 as shown in Fig. 10(a). Furthermore, if the film 5 is attached to one surface 22A of the second portion 22, a portion of one surface 22A of the second portion 22 that is not covered by the sealing resin 80 and is exposed from the sealing resin 80 will be formed as shown in Fig. 10(b).

[0045] On the other hand, in this embodiment, not only one surface 21A of the first portion 21 but also one surface 23A of the third portion 23 contacts the film 5, so that high flatness can be obtained for the film 5. Therefore, the occurrence of wrinkles and exposure of one surface 22A of the second portion 22 from the sealing resin 80, which occur in the reference example, can be suppressed.

[0046] According to experiments by the inventors of the present application, it has been found that excellent flatness can be obtained for the film 5 if at least a part of one surface 21A of the first portion 21 or one surface 23A of the third portion 23 is present inside any circle 11 (see FIG. 2) having a diameter of 1.5 mm and located inside the frame portion 10 in a plan view perpendicular to one surface 21A of the first portion 21. For this reason, it is preferable that at least a part of one surface 21A of the first portion 21 or one surface 23A of the third portion 23 is present inside any circle 11 having a diameter of 1.5 mm and located inside the frame portion 10.

[0047] Second embodiment Next, a second embodiment will be described. The second embodiment differs from the first embodiment mainly in that a semiconductor element is flip-chip mounted on a lead frame with a film. Fig. 11 is a cross-sectional view showing a method for manufacturing a semiconductor device using a lead frame with a film according to the second embodiment.

[0048] First, as shown in Fig. 11(a), a lead frame 200 with a film according to the second embodiment is prepared. The lead frame 200 with a film does not have a plating layer 91 for a bonding wire 92. Other configurations of the lead frame 200 with a film may be similar to those of the first embodiment, but the arrangement of the multiple lead portions 20 may differ from that of the first embodiment.

[0049] After preparing the lead frame 200 with the film, a semiconductor element 250 is flip-chip mounted on the upper surface of the lead portion 20 in each singulation region 110. The semiconductor element 250 has a base 251 and a plurality of electrodes 252 provided on the lower surface of the base 251. At this time, the upper surface of the lead portion 20 and the electrodes 252 are bonded with a conductive adhesive 93. Solder or the like is used as the conductive adhesive 93. Note that a silver plating layer may be provided at the bonding portion between the lead frame 200 with the semiconductor element 250 and the film. The semiconductor element 250 is an example of an electronic component.

[0050] 11(b), the semiconductor element 250 is sealed with a sealing resin 80. At this time, in the plurality of individual regions 110, the semiconductor element 250 is sealed with a single sealing resin 80.

[0051] Next, similarly to the first embodiment, the film 5 is peeled off and the first portion 21 of the lead portion 20 is cut off. This removes the frame portion 10 from the lead portion 20. As a result, a semiconductor device 220 is obtained as shown in FIG. 11(c).

[0052] The semiconductor element 250 has one main surface 250A and the other main surface 250B opposite to the one main surface 250A. The one main surface 250A is bonded to the lead portion 20. At least a part of the one main surface 250A and at least a part of the other main surface 250B are covered with a sealing resin 80. The other main surface 250B may be entirely covered with the sealing resin 80. The one main surface 250A is an example of a third main surface, and the other main surface 250B is an example of a fourth main surface.

[0053] The second embodiment can also provide the same effects as the first embodiment.

[0054] Third embodiment Next, a third embodiment will be described. The third embodiment differs from the first embodiment mainly in the configuration of the lead frame.

[0055] [Structure of lead frame with film] The structure of the lead frame with a film according to the third embodiment will be described. Fig. 12 is a top view and a bottom view showing the lead frame with a film according to the third embodiment. Fig. 12(a) is a top view, and Fig. 12(b) is a bottom view. Fig. 13 is a cross-sectional view showing the lead frame with a film according to the third embodiment. Fig. 13(a) corresponds to a cross-sectional view taken along line XIIIa-XIIIa in Fig. 12, and Fig. 13(b) corresponds to a cross-sectional view taken along line XIIIb-XIIIb in Fig. 12. Figs. 12 and 13 show one of the individualization regions 110.

[0056] A lead frame with a film 300 according to the third embodiment has a lead frame 3 and a film 5 attached to the lead frame 3. The lead frame 3 is a lead frame on which two semiconductor elements are mounted on the upper surface and is covered with a sealing resin to form a semiconductor device. A film 5 is attached to the lower surface (one surface) of the lead frame 3. The film 5 is omitted in Fig. 12(b).

[0057] Each singulation region 110 has an annular frame portion 10, a plurality of lead portions 20, a die pad portion 31, and a plurality of support portions 32. The frame portion 10 is shared between two adjacent singulation regions 110. Each lead portion 20 extends from the frame portion 10 to the inside of the frame portion 10. The frame portion 10 is formed in a rectangular shape, and the plurality of lead portions 20 extend from each of the four sides of the frame portion 10 to the inside of the frame portion 10. The die pad portion 31 is supported by the frame portion 10 by the plurality of support portions 32.

[0058] The support portion 32 has one surface 32A (lower surface) and the other surface 32B (upper surface) opposite to the one surface 32A. The one surface 32A is continuous with one surface 10A of the frame portion 10, and the other surface 32B is continuous with the other surface 10B of the frame portion 10. The one surface 10A and the one surface 32A may be separated from the film 5.

[0059] The die pad portion 31 has one surface 31A (lower surface) and the other surface 31B (upper surface) opposite to the one surface 31A. The one surface 31A is continuous with one surface 32A, and the other surface 31B is continuous with the other surface 32B. At least a part of the one surface 31A is in contact with the film 5.

[0060] The portion of one surface 31A in contact with film 5 may be flush with one surface 21A and one surface 23A, or may be parallel to the XY plane. The other surface 31B and other surface 32B may be flush with the other surface 10B, the other surface 21B, the other surface 22B, and the other surface 23B, or may be parallel to the XY plane. One surface 31A is an example of the fourth surface, and the other surface 31B is an example of the fifth surface.

[0061] The lead frame 3 may further have a plating layer 91 on parts of the other surfaces 21B, 22B, and 23B of some of the lead portions 20 among the plurality of lead portions 20, and a plating layer 94 on parts of the other surfaces 21B, 22B, and 23B of the remaining lead portions 20. The plating layer 91 is used for connecting a bonding wire. The plating layer 94 is used for flip chip mounting. The plating layers 91 and 94 may include, for example, a silver plating layer. Some of the plurality of lead portions 20 provided with the plating layer 91 may not have the third portion 23.

[0062] Other configurations of the third embodiment are similar to those of the first embodiment.

[0063] [Manufacturing method of lead frame with film] The lead frame 300 with a film according to the third embodiment can be manufactured by the same method as in the first embodiment, by changing the pattern formed in the resist 71 and the pattern formed in the resist 72.

[0064] [Structure of semiconductor device] Next, the structure of a semiconductor device manufactured using a lead frame with a film 300 according to the third embodiment will be described. FIG. 14 is a top view and a bottom view showing a semiconductor device manufactured using a lead frame with a film according to the third embodiment. FIG. 14(a) is a top view, and FIG. 14(b) is a bottom view. FIG. 15 is a cross-sectional view showing a semiconductor device manufactured using a lead frame with a film according to the third embodiment. FIG. 15(a) corresponds to a cross-sectional view taken along line XVa-XVa in FIG. 14, and FIG. 15(b) corresponds to a cross-sectional view taken along line XVb-XVb in FIG. 14. In FIG. 14(a), the sealing resin 80 is seen through, and the parts hidden by the sealing resin 80 are also shown by solid lines.

[0065] In the semiconductor device 320 manufactured using the film-attached lead frame 300 according to the third embodiment, a semiconductor element 350 is mounted on a die pad portion 31. The semiconductor element 350 has a base portion 351 and a plurality of electrodes 352 provided on the upper surface of the base portion 351. The other surface 31B of the die pad portion 31 and the lower surface of the base portion 351 are joined by an adhesive 355. That is, the semiconductor element 350 is mounted on the other surface 31B of the die pad portion 31. As the adhesive 355, a die attach film, a silver paste, a solder, or the like is used. The plating layer 91 and the electrode 352 are electrically connected by a bonding wire 92. The semiconductor element 350 is an example of an electronic component.

[0066] Furthermore, a semiconductor element 360 is flip-chip mounted on the upper surface of the lead portion 20 on which the plating layer 94 is provided. The semiconductor element 360 has a base 361 and a plurality of electrodes 362 provided on the lower surface of the base 361. The upper surface of the lead portion 20 and the electrodes 362 are joined by the plating layer 94. The electrodes 362 and the plating layer 94 may also be joined via a conductive adhesive such as solder. The semiconductor element 360 is an example of an electronic component.

[0067] The semiconductor element 350 has one main surface 350A and the other main surface 350B opposite to the one main surface 350A. The one main surface 350A is bonded to the die pad portion 31. In this embodiment, at least a part of the other main surface 350B is covered with the sealing resin 80. The one main surface 350A is an example of a third main surface, and the other main surface 350B is an example of a fourth main surface.

[0068] The semiconductor element 360 has one main surface 360A and the other main surface 360B opposite to the one main surface 360A. One main surface 360A is bonded to the lead portion 20. At least a portion of the one main surface 360A and at least a portion of the other main surface 360B are covered with sealing resin 80. The other main surface 360B may be entirely covered with sealing resin 80. One main surface 360A is an example of a third main surface, and the other main surface 360B is an example of a fourth main surface.

[0069] The other configuration of the semiconductor device 320 is similar to that of the semiconductor device 120 .

[0070] The third embodiment can also provide the same effect as the first embodiment. Since the film-attached lead frame 300 includes the die pad portion 31, it is easy to obtain high flatness in the film 5 around the die pad portion 31. On the other hand, in the vicinity of the lead portion 20 on which the semiconductor element 350 is mounted, if the lead portion 20 does not include the third portion 23, there is a risk that the flatness of the film 5 will be reduced as in the above reference example. In this embodiment, since the lead portion 20 on which the semiconductor element 350 is mounted has the third portion 23, it is possible to obtain high flatness in the film 5.

[0071] As in the first embodiment, it is preferable that at least a part of one surface 21A of the first portion 21 or one surface 23A of the third portion 23 is present inside any circle 11 having a diameter of 1.5 mm located inside the frame portion 10. Also, there may be a circular region 12 having a diameter of 1.5 mm in a plan view perpendicular to the one surface 21A, inside which one surface 21A of the first portion 21 and one surface 31A of the die pad portion 31 are not present, and in which at least a part of one surface 23A of the third portion 23 is present.

[0072] Moreover, instead of the semiconductor element 350 or 360, a passive component such as a capacitor may be used as the electronic component.

[0073] Although the preferred embodiments have been described in detail above, the present disclosure is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims. [Explanation of symbols]

[0074] 1, 3 Lead frame 5. Film 10 Frame 10A, 21A, 22A, 23A, 31A One side 10B, 21B, 22B, 23B, 31B other side 11 yen 12 Circular Area 15 Connecting part 18 cutting blade 20 Lead section 21 Part 1 21C End face 22 Part 2 23 Part 3 31 Die pad section 80 Sealing resin 80A, 150A, 250A, 350A, 360A One main surface 80B, 150B, 250B, 350B, 360B Other main surface 80C side 100, 200, 300 Lead frame with film 120, 220, 320 Semiconductor device 150, 250, 350, 360 Semiconductor elements

Claims

1. A lead frame; a film attached to the lead frame; having The lead frame is An annular frame portion; a plurality of lead portions extending from the frame portion to an inside of the frame portion; having Each of the leads is A first portion having a connecting portion connected to the frame portion; a second portion connected to the first portion and located farther from the connecting portion than the first portion; a third portion connected to the second portion and located farther from the connecting portion than the second portion; having the first portion has a first surface in contact with the film; the second portion has a second surface adjacent to the first surface and spaced from the film; The third portion is a lead frame with a film, the lead frame having a third surface that is continuous with the second surface and in contact with the film.

2. In a plan view perpendicular to the first surface, 2. The lead frame with a film according to claim 1, wherein at least a part of the first surface or the third surface is present inside any circle having a diameter of 1.5 mm located inside the frame portion.

3. a die pad portion provided inside the frame portion, 3. The lead frame with a film according to claim 1, wherein the die pad portion has a fourth surface in contact with the film.

4. In a plan view perpendicular to the first surface, 4. The lead frame with a film according to claim 3, wherein the diameter of the lead frame is 1.5 mm, and the inside of the circular region is free of the first surface and the fourth surface, and at least a part of the third surface is present.

5. the frame portion has a surface away from the film, 3. The lead frame with a film according to claim 1, wherein the thickness of said frame portion on the surface remote from said film is thinner than the thicknesses of said first portion and said third portion.

6. 3. The lead frame with a film according to claim 1, wherein the first surface and the third surface are flush with each other.

7. forming a lead frame; attaching a film to the lead frame; having The lead frame is An annular frame portion; a plurality of lead portions extending from the frame portion to an inside of the frame portion; having Each of the leads is A first portion having a connecting portion connected to the frame portion; a second portion connected to the first portion and located farther from the connecting portion than the first portion; a third portion connected to the second portion and located farther from the connecting portion than the second portion; having the first portion has a first surface in contact with the film; the second portion has a second surface adjacent to the first surface and spaced from the film; A method for manufacturing a lead frame with a film, wherein the third portion has a third surface that is connected to the second surface and contacts the film.

8. A plurality of leads; an electronic component electrically connected to the plurality of leads; a sealing resin that seals the lead portion and the electronic component; having The sealing resin is A first major surface; A second major surface opposite the first major surface; A side surface connecting the first main surface and the second main surface; having Each of the leads is a first portion having an end surface exposed from the side surface of the sealing resin; a second portion connected to the first portion and located farther from the end surface than the first portion; a third portion connected to the second portion and located farther from the end surface than the second portion; having the first portion has a first surface exposed from the first main surface, the second portion has a second surface that is continuous with the first surface and is covered with the sealing resin, the third portion has a third surface that is continuous with the second surface and is exposed from the first main surface, The electronic component includes: A third main surface covered with the sealing resin; a fourth main surface opposite to the third main surface and covered with the sealing resin; A semiconductor device having the above structure.

9. In a plan view perpendicular to the first main surface, 9. The semiconductor device according to claim 8, wherein at least a part of the first surface or the third surface is present inside any circle having a diameter of 1.5 mm and located inside the side surface.

10. A die pad portion is provided on the inside of the side surface, The die pad portion is a fourth surface exposed from the first main surface; and a fifth surface opposite to the fourth surface; having The semiconductor device according to claim 8 , wherein the electronic component is mounted on the fifth surface.

11. In a plan view perpendicular to the first surface, 11. The semiconductor device according to claim 10, wherein the diameter of the circular region is 1.5 mm, inside which the first surface and the fourth surface are not present and at least a part of the third surface is present.

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