Dicing tape, dicing die bonding film, and method for manufacturing semiconductor device

Abstract

To provide a dicing tape capable of shrinking even when heated at relatively low temperature after being stretched in an expanding process, and sufficiently maintaining the separation distance (kerf) between adjacent semiconductor chips.SOLUTION: A dicing tape includes a substrate layer and an adhesive layer laminated on one surface of the substrate layer. The substrate layer has a plurality of laminated layers. The plurality of layers include at least a first substrate layer containing ethylene-acrylic acid copolymer resin and a second substrate layer containing resin other than the ethylene-acrylic acid copolymer resin. A second substrate layer is disposed between the first substrate layer and the adhesive layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a dicing tape used when manufacturing, for example, a semiconductor device, a dicing die bond film provided with the dicing tape, and a method for manufacturing a semiconductor device using the dicing die bond film. [Background technology]

[0002] Conventionally, a dicing die bond film used in the manufacture of semiconductor devices and the like is known. This type of dicing die bond film includes, for example, a dicing tape and a die bond sheet that is laminated on the dicing tape and adhered to a semiconductor wafer. The dicing tape has a base layer and an adhesive layer in contact with the die bond sheet. This type of dicing die bond film is used, for example, as follows in the manufacture of semiconductor devices.

[0003] A method for manufacturing a semiconductor device generally includes a front-end process of forming a circuit surface on one side of a disk-shaped bare wafer using highly integrated electronic circuits, and a back-end process of cutting out semiconductor chips from the semiconductor wafer with the circuit surface formed thereon and assembling them.

[0004] For example, the post-process includes a stealth dicing process in which a weak portion for cutting the semiconductor wafer into small semiconductor chips (dies) is formed in the semiconductor wafer by laser light, a mounting process in which the surface opposite to the circuit surface of the semiconductor wafer is attached to a die bond sheet and the semiconductor wafer is fixed to the dicing tape via the die bond sheet, an expanding process in which the dicing tape is stretched in the radial direction of the semiconductor wafer to cut the semiconductor wafer with the weak portion formed together with the die bond sheet and widen the gap between adjacent semiconductor chips (dies), a pick-up process in which the semiconductor chip with the die bond sheet attached is taken out by peeling between the die bond sheet and the adhesive layer, a die bond process in which the semiconductor chip with the die bond sheet attached is attached to an adherend via the die bond sheet, and a curing process in which the die bond sheet attached to the adherend is heat-cured. A semiconductor device is manufactured through, for example, these processes.

[0005] In the manufacturing method of the semiconductor device as described above, for example, after the above-mentioned expanding step is performed, various problems may occur. For example, the cleaved semiconductor wafer (i.e., semiconductor chip) and a part of the small piece of the die bond sheet may rise from the surface of the adhesive layer of the dicing tape. In addition, for example, even if the dicing tape is heated and shrunk around the cleaved semiconductor chips, the dicing tape may sag, and the stretched dicing tape may return to its original state, narrowing the once widened separation distance (kerf) between adjacent semiconductor chips.

[0006] In response to this, in order to solve the former problem, i.e., to suppress floating of the semiconductor chip after the expanding process, a dicing tape is known in which the specific physical properties of the base layer of the dicing tape are designed to fall within a predetermined numerical range (for example, Patent Document 1).

[0007] Specifically, in the dicing tape described in Patent Document 1, the base layer is composed of a resin film having a single structure or a laminated structure, and the base layer has a thermal shrinkage rate in the MD direction of 20% or less at 100°C, and a bending hardness of 40 N mm, calculated as the product of the elastic modulus of the base layer measured at 25°C using a nanoindenter and the second moment of area of ​​the base layer. 2 The following is the result. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Patent Publication No. 2021-077753 Summary of the Invention [Problem to be solved by the invention]

[0009] On the other hand, the latter problem has not necessarily been fully addressed. In particular, if the heating temperature for shrinking a portion of the dicing tape is relatively low, the stretched portion of the dicing tape may not necessarily shrink sufficiently, and the separation distance (kerf) between adjacent semiconductor chips may not be maintained sufficiently. Therefore, there is a demand for a dicing tape that can shrink even when heated at a relatively low temperature after being stretched, and that can adequately maintain the separation distance (kerf) between adjacent semiconductor chips.

[0010] Therefore, an object of the present invention is to provide a dicing tape that can shrink even when heated at a relatively low temperature after being stretched in the expanding process, and can adequately maintain the separation distance (kerf) between adjacent semiconductor chips. [Means for solving the problem]

[0011] In order to solve the above problems, the dicing tape according to the present invention comprises: A substrate layer and a pressure-sensitive adhesive layer overlaid on one side of the substrate layer, the base layer has a plurality of laminated layers, and the plurality of layers include at least a first base layer containing an ethylene-acrylic acid copolymer resin and a second base layer containing a resin other than the ethylene-acrylic acid copolymer resin; The second base layer is disposed between the first base layer and the pressure-sensitive adhesive layer.

[0012] The dicing die bond film according to the present invention is The device includes the above dicing tape and a die bond sheet overlapping the dicing tape.

[0013] The method for manufacturing a semiconductor device according to the present invention includes the steps of: A method for manufacturing a semiconductor device, comprising: manufacturing a semiconductor device having a semiconductor chip by using a dicing die bond film comprising the above dicing tape and a die bond sheet overlapping the dicing tape; a mounting step of fixing the semiconductor wafer to the dicing tape via the die bond sheet by disposing the die bond sheet between the adhesive layer of the dicing tape and the semiconductor wafer; an expanding step of splitting the semiconductor wafer together with the die bond sheet by stretching the dicing tape to obtain a group of semiconductor chips by dividing the semiconductor wafer into small pieces; A portion of the stretched dicing tape around the group of semiconductor chips is heated and caused to shrink. Effect of the Invention

[0014] According to the dicing tape and dicing die bond film of the present invention, even if the dicing tape is heated at a relatively low temperature after being stretched, it can shrink, and the separation distance (kerf) between adjacent semiconductor chips can be sufficiently maintained. According to the method for manufacturing a semiconductor device of the present invention, after the dicing tape is stretched in the expanding step, the separation distance (kerf) between adjacent semiconductor chips can be sufficiently maintained. [Brief description of the drawings]

[0015] [Figure 1] FIG. 2 is a cross-sectional view of the dicing die bond film of the present embodiment cut in the thickness direction. [Figure 2A] FIG. 2 is a cross-sectional view of an example of a base layer of a dicing tape in the dicing die bond film of the present embodiment, cut in the thickness direction. [Figure 2B] FIG. 11 is a cross-sectional view of another example of the base layer of the dicing tape in the dicing die bond film of the present embodiment, cut in the thickness direction. [Figure 3A] 1A to 1C are cross-sectional views illustrating a stealth dicing process in a manufacturing method of a semiconductor device. [Figure 3B] 1A to 1C are cross-sectional views illustrating a stealth dicing process in a manufacturing method of a semiconductor device. [Figure 3C] 1A to 1C are cross-sectional views illustrating a stealth dicing process in a manufacturing method of a semiconductor device. [Figure 3D] 1A to 1C are cross-sectional views illustrating a back grinding process in a manufacturing method of a semiconductor device. [Figure 4A] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor device. [Figure 4B] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor device. [Figure 5A] 1A to 1C are cross-sectional views each showing a schematic view of an expanding step performed at a low temperature in a method for manufacturing a semiconductor device. [Figure 5B] 1A to 1C are cross-sectional views each showing a schematic view of an expanding step performed at a low temperature in a method for manufacturing a semiconductor device. [Figure 5C] 1A to 1C are cross-sectional views each showing a schematic view of an expanding step performed at a low temperature in a method for manufacturing a semiconductor device. [Figure 6A] 4A to 4C are cross-sectional views illustrating an expansion step at room temperature in the manufacturing method of the semiconductor device. [Figure 6B] 4A to 4C are cross-sectional views illustrating an expansion step at room temperature in the manufacturing method of the semiconductor device. [Figure 7]1 is a schematic diagram showing a heat treatment in an expanding step in a manufacturing method of a semiconductor device, viewed from one side in the thickness direction of a semiconductor chip. [Figure 8] 1A to 1C are cross-sectional views illustrating a pickup step in a manufacturing method of a semiconductor device. [Figure 9] 4A to 4C are cross-sectional views each showing a schematic state after a die bonding step and a wire bonding step in the manufacturing method of the semiconductor device. [Figure 10] 5A to 5C are cross-sectional views each showing a schematic diagram of an encapsulation step in the manufacturing method of the semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, an embodiment of a dicing tape according to the present invention and a dicing die bond film including the dicing tape will be described with reference to the drawings.

[0017] As shown in FIG. 1, the dicing die bond film 1 of this embodiment includes a dicing tape 20 and a die bond sheet 10 laminated on an adhesive layer 22 (described later) of the dicing tape 20 and adhered to a semiconductor wafer. It should be noted that the figures in the drawings are schematic diagrams and the aspect ratios are not necessarily the same as those of the actual products.

[0018] In the dicing die bond film 1 of this embodiment, when used, the adhesive layer 22 is cured by irradiation with active energy rays (e.g., ultraviolet rays). In detail, in a state in which the die bond sheet 10 having a semiconductor wafer adhered to one surface and the adhesive layer 22 bonded to the other surface of the die bond sheet 10 are laminated, ultraviolet rays or the like are irradiated to at least the adhesive layer 22. For example, ultraviolet rays or the like are irradiated from the side where the base layer 21 is arranged, and the ultraviolet rays or the like reach the adhesive layer 22 after passing through the base layer 21. The adhesive layer 22 is cured by irradiation with ultraviolet rays or the like. Since the adhesive layer 22 hardens after irradiation, the adhesive strength of the adhesive layer 22 can be reduced, and therefore, after irradiation, the die bond sheet 10 (with the semiconductor chip adhered thereto) can be relatively easily peeled off from the adhesive layer 22. The die bond sheet 10 is to be adhered to an adherend such as a circuit board or a semiconductor chip in the manufacture of a semiconductor device.

[0019] <Dicing tape for dicing die bond film> The dicing tape 20 is usually a long sheet and is stored in a rolled state until it is used. The dicing die bond film 1 of the present embodiment is stretched on an annular frame having an inner diameter slightly larger than the silicon wafer to be cut, and then cut for use.

[0020] The dicing tape 20 includes a base layer 21 and an adhesive layer 22 superimposed on the base layer 21. The adhesive layer 22 of the dicing tape 20 is, for example, a pressure-sensitive adhesive layer.

[0021] [Dicing tape base layer] In this embodiment, the base layer 21 superimposed on the pressure-sensitive adhesive layer 22 has a laminated structure (for example, a two-layer structure or a three-layer structure). 2A and 2B, the base layer 21 has at least a first base layer 21a containing an ethylene-acrylic acid copolymer resin and a second base layer 21b containing a resin other than an ethylene-acrylic acid copolymer resin. The second base layer 21b is disposed between the first base layer 21a and the pressure-sensitive adhesive layer 22.

[0022] 2A, the base layer 21 is composed of two layers, a first base layer 21a and a second base layer 21b, stacked on top of each other. The two-layer base layer 21 has a first base layer 21a containing ethylene-acrylic acid copolymer resin (EAA) and a second base layer 21b laminated on the first base layer 21a and containing a resin other than ethylene-acrylic acid copolymer resin. For example, one side of the second base layer 21b and one side of the pressure-sensitive adhesive layer 22 overlap with each other. The base material layer 21 having such a two-layer laminate structure is formed, for example, by producing each layer by co-extrusion molding and integrating the two layers.

[0023] In the two-layered base material layer 21, the second base material layer 21b preferably contains ethylene-vinyl acetate copolymer resin (EVA). This allows the base material layer 21 to exhibit the properties of ethylene-acrylic acid copolymer resin (EAA), such as relatively high elasticity, as well as the properties of ethylene-vinyl acetate copolymer resin (EVA), which has a relatively high thermal shrinkage rate at high temperatures. Therefore, for example, after the dicing tape 20 is stretched in the expanding process, the separation distance (kerf) between adjacent semiconductor chips can be sufficiently maintained.

[0024] On the other hand, the base material layer 21 may be configured as three layers, in which a first base material layer 21a, a second base material layer 21b, and a third base material layer 21c are stacked, as shown in Fig. 2B for example. The three-layer base material layer 21 preferably has a first base material layer 21a and a third base material layer 21c each containing an ethylene-acrylic acid copolymer resin (EAA), and a second base material layer 21b disposed between these layers and containing a resin other than an ethylene-acrylic acid copolymer resin. In the base material layer 21 having such a three-layer laminate structure, each layer is produced by co-extrusion molding, and the three layers are integrated together, for example.

[0025] In the three-layered base layer 21, the first base layer 21a and the third base layer 21c arranged on both sides each preferably contain ethylene-acrylic acid copolymer resin (EAA), and the second base layer 21b arranged between the first base layer 21a and the third base layer 21c preferably contains ethylene-vinyl acetate copolymer resin (EVA). This allows the base layer 21 to exhibit the properties of ethylene-acrylic acid copolymer resin (EAA), such as relatively high elasticity, and also allows the base layer 21 to exhibit the properties of ethylene-vinyl acetate copolymer resin (EVA), which has a relatively high thermal shrinkage rate at high temperatures. Therefore, for example, after the dicing tape 20 is stretched in the expanding process, the separation distance (kerf) between adjacent semiconductor chips can be sufficiently maintained. In the base layer 21, for example, the layer farthest from the adhesive layer 22 is the first base layer 21a, and the layer overlapping the adhesive layer 22 is the third base layer 21c. The second base material layer 21b is disposed between the first base material layer 21a and the third base material layer 21c.

[0026] In the two-layered substrate layer 21, the ratio of the thickness of the second substrate layer 21b to the thickness of the first substrate layer 21a (thickness of the second substrate layer 21b / thickness of the first substrate layer 21a) is preferably 1 or more and 10 or less. In the three-layered base layer 21, the ratio of the thickness of the inner layer to the total thickness of the outer layers (thickness of the second base layer 21b / total thickness of the first base layer 21a and the third base layer 21c) is preferably 1 or more and 10 or less. The thicknesses of the first base layer 21a and the third base layer 21c may be approximately the same. For example, the ratio of the thickness of the first base layer 21a to the thickness of the third base layer 21c may be 0.9 or more and 1.1 or less. The first base material layer 21a and the third base material layer 21c may be the same as each other. In other words, the first base material layer 21a and the third base material layer 21c may be the same as each other in both thickness and material.

[0027] The thickness (total thickness) of the base layer 21 is preferably 80 μm or more and 150 μm or less. This value is the average value of measurements taken at least at three randomly selected locations. Hereinafter, the thickness of the adhesive layer 22 is also the average value measured in a similar manner. By making the thickness of the base layer 21 80 μm or more, stress can be applied more uniformly to the entire base layer 21, and the semiconductor wafer can be more effectively cleaved in the expanding step.

[0028] In the two-layered base material layer 21, the first base material layer 21a preferably has a thickness of 5 μm or more and 40 μm or less, and the second base material layer 21b preferably has a thickness of 50 μm or more and 120 μm or less. This has the advantage that the physical properties (characteristics) of each layer in the base material layer 21 are more suitably reflected in the base material layer 21. In the three-layered base material layer 21, the first base material layer 21a and the third base material layer 21c each preferably have a thickness of 1 μm or more and 15 μm or less, and the second base material layer 21b preferably has a thickness of 70 μm or more and 120 μm or less. This has the advantage that the physical properties (characteristics) of each layer in the base material layer 21 are more suitably reflected in the base material layer 21.

[0029] Since the base layer 21 has a laminated structure (e.g., a three-layer structure) in which multiple layers are stacked, it is possible to laminate a layer with a higher elastic modulus and a layer with a lower elastic modulus. Therefore, the elastic modulus of the base layer 21 can be controlled relatively easily. For example, if the elastic modulus of the base layer 21 consisting of only one layer is relatively high, the base layer 21 may be easily torn in the expanding process. In addition, for example, the stress for breaking the semiconductor chip is transmitted from the force stretching the dicing tape 20 in the expanding process through the base layer 21 and the adhesive layer 22, but if the elastic modulus of the base layer 21 consisting of only one layer is relatively low, the above stress may be somewhat difficult to transmit. Furthermore, because the base layer 21 has a laminated structure, the thermal shrinkage rate of the base layer 21 can be controlled relatively easily for the same reasons as those mentioned above. In this way, since the base layer 21 is composed of a plurality of layers, the physical properties (characteristics) of each layer can be brought out. Therefore, a base layer composed of a plurality of layers is more likely to exhibit desired characteristics than a single-layer base layer.

[0030] Each layer of the base material layer 21 is, for example, a metal foil, a rubber sheet, or a resin film.

[0031] As described above, the first base layer 21a contains at least ethylene-acrylic acid copolymer resin (EAA). The first base layer 21a is preferably made of a film made of ethylene-acrylic acid copolymer resin. This allows the dicing tape 20 to more fully combine relatively high heat shrinkability and relatively high elasticity.

[0032] Ethylene-acrylic acid copolymer resin (EAA) has at least an ethylene structural unit and an acrylic acid structural unit in the molecule. The structural unit is a structure derived from each monomer after the monomers (ethylene, acrylic acid) are polymerized when the ethylene-acrylic acid copolymer resin is polymerized. The ethylene-acrylic acid copolymer resin (EAA) may contain 5% by mass or more and 15% by mass or less of acrylic acid structural units in the molecule.

[0033] The first base layer 21a preferably contains 50% by mass or more of ethylene-acrylic acid copolymer resin, more preferably 60% by mass or more, and even more preferably 70% by mass or more, so that the dicing tape 20 can more fully combine relatively high heat shrinkability and relatively high elastic modulus.

[0034] When the base layer 21 has a three-layer structure, the third base layer 21c may be made of the same material as the first base layer 21a.

[0035] The second base layer 21b preferably contains at least one of ethylene-vinyl acetate copolymer resin, polypropylene resin, and low-density polyethylene (LDPE), more preferably contains at least ethylene-vinyl acetate copolymer resin, and further preferably is made of a film made of ethylene-vinyl acetate copolymer resin, which allows the dicing tape 20 to more fully combine relatively high heat shrinkability and relatively high elastic modulus.

[0036] Ethylene-vinyl acetate copolymer resin (EVA) may contain 5% by mass or more and 35% by mass or less of vinyl acetate structural units. The structural units are structures derived from each monomer after the monomers (ethylene, vinyl acetate) are polymerized when polymerizing the ethylene-vinyl acetate copolymer.

[0037] The second base layer 21b preferably contains 10% by mass or more of ethylene-vinyl acetate copolymer resin, more preferably 20% by mass or more, and even more preferably 30% by mass or more. This allows the dicing tape 20 to more fully combine relatively high heat shrinkability and relatively high elasticity. The second base layer 21b may contain 90% by mass or less of ethylene-vinyl acetate copolymer resin.

[0038] If necessary, each layer of the base material layer 21 may further contain, for example, polyolefins such as low-density polyethylene (LDPE), high-density polyethylene (HDPE), polypropylene (PP), and ethylene-propylene copolymers; ionomer resins; ethylene copolymers such as ethylene-(meth)acrylic acid ester (random, alternating) copolymers; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polybutylene terephthalate (PBT); polyacrylates; polyvinyl chloride (PVC); polyurethanes; polycarbonates; polyphenylene sulfide (PPS); polyamides such as aliphatic polyamides and fully aromatic polyamides (aramids); polyether ether ketones (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymers); cellulose or cellulose derivatives; silicone-containing polymers; fluorine-containing polymers, etc.

[0039] When each layer of the base material layer 21 has a resin film, the resin film may be subjected to a stretching process or the like to control the deformability such as elongation percentage.

[0040] The base layer 21 is preferably a light-transmitting (ultraviolet ray-transmitting) resin film or the like, since it allows active energy rays such as ultraviolet ray to be applied to the pressure-sensitive adhesive layer 22 from the back side.

[0041] Each layer of the base material layer 21 may further include an antistatic agent. The antistatic agent can prevent static electricity from building up in the base material layer 21. This can adequately prevent the electronic circuits in the semiconductor chip from being destroyed by static electricity due to discharge of static electricity. Furthermore, preventing static electricity can adequately prevent foreign matter such as dust from adhering to the base material layer 21.

[0042] The back side of the base material layer 21 (the side on which the adhesive layer 22 is not overlapped) may be subjected to a release treatment using a release agent (release agent) such as a silicone-based resin or a fluorine-based resin in order to impart releasability.

[0043] On the other hand, the surface of the base layer 21 in contact with the pressure-sensitive adhesive layer 22 may be subjected to a surface treatment for enhancing adhesion to the pressure-sensitive adhesive layer 22. Examples of the surface treatment that can be used include oxidation treatment by chemical or physical methods such as chromate treatment, ozone exposure, flame exposure, high-voltage shock exposure, and ionizing radiation treatment. In addition, the base layer 21 may be subjected to a coating treatment using a coating agent such as an anchor coating agent, a primer, or an adhesive.

[0044] In this embodiment, preferably, the chart obtained by measuring the base layer 21 by differential scanning calorimetry does not have an endothermic peak having an apex at a temperature of 110° C. or higher, more preferably does not have an endothermic peak having an apex at a temperature of 105° C. or higher, and even more preferably does not have an endothermic peak having an apex at a temperature of 100° C. or higher. In other words, in this embodiment, the maximum endothermic peak appearing in the above chart has an apex preferably at a temperature below 110° C., more preferably has an apex at a temperature below 105° C., and even more preferably has an apex at a temperature below 100° C. For example, the above chart does not have an endothermic peak in the range of 110° C. or higher and 200° C. or lower. The endothermic peak generally refers to the maximum peak having the highest height among the endothermic peaks. If the above chart has an endothermic peak with an apex at a temperature below 100° C., for example, a portion of the dicing tape 20 can shrink more sufficiently by heat treatment even if the temperature of the heat treatment after the dicing tape 20 is stretched is relatively low.

[0045] For example, most of the resins contained in the layers constituting the base material layer 21 have a melting point below 110°C, and therefore the above chart does not have an endothermic peak with an apex at a temperature of 110°C or higher.

[0046] Differential scanning calorimetry is performed using a commercially available DSC measuring device, by weighing out about 4 mg of a measurement sample, and performing measurement in a nitrogen gas atmosphere at a temperature rise rate of 10°C / min from 0°C to 200°C. The measurement sample is prepared by cutting the base layer 21 in the thickness direction. A general measuring device can be used.

[0047] In this embodiment, preferably, the absolute value of the difference between the melting point of the first base material layer 21a and the melting point of the second base material layer 21b is 10° C. or less. In the base material layer 21 having the third base material layer 21c, it is preferable that the absolute value of the maximum difference between the melting point of the first base material layer 21a or the third base material layer 21c and the melting point of the second base material layer 21b is 10° C. or less. The melting point of the first base material layer 21a or the third base material layer 21c is usually higher than the melting point of the second base material layer 21b.

[0048] The difference (absolute value) in the melting points may be 5° C. or more.

[0049] The melting point of each of the first base material layer 21a and the third base material layer 21c is independently a predetermined value, for example, from 90°C to 130°C, and preferably from 90°C to less than 100°C.

[0050] The melting point of the second base layer 21b is, for example, a predetermined value of 80°C or more and 100°C or less, and preferably 85°C or more and 95°C or less.

[0051] The melting points are determined from the results of a measurement method similar to the above-mentioned differential scanning calorimetry. Specifically, the first base material layer 21a, the second base material layer 21b, or the third base material layer 21c is measured by differential scanning calorimetry, and the temperature of the apex of the endothermic peak that appears in each chart is taken as each melting point. As such an apex, the apex of the maximum peak among the endothermic peaks that appear is usually adopted.

[0052] In this embodiment, the tensile storage modulus of the base layer 21 at 90° C. is preferably 0.8 MPa or more, and more preferably 1.0 MPa or more, so that the separation distance (kerf) between adjacent semiconductor chips can be more sufficiently maintained after the expanding step. The tensile storage modulus of the base layer 21 at 90° C. may be 100 MPa or less, preferably 50 MPa or less, more preferably 10 MPa or less, and further preferably 5 MPa or less. Such a smaller tensile storage modulus allows the dicing tape 20 to be more effectively thermally shrunk in the expanding step described below.

[0053] In this embodiment, the tensile storage modulus of the first base material layer 21a at 90° C. is preferably greater than the tensile storage modulus of the second base material layer 21b at 90° C. In the base material layer 21 having the third base material layer 21c, the tensile storage modulus of both the first base material layer 21a and the third base material layer 21c at 90° C. is preferably greater than the tensile storage modulus of the second base material layer 21b at 90° C. This makes it possible to more sufficiently maintain the separation distance (kerf) between adjacent semiconductor chips after the expanding step. The tensile storage modulus of the first base material layer 21a and the third base material layer 21c at 90° C. may be, for example, 1.5 MPa or more and 5.0 MPa or less. The tensile storage modulus of the second base material layer 21b at 90° C. may be, for example, 0.5 MPa or more and less than 1.5 MPa. The difference between them may be 1.0 MPa or more and 2.0 MPa or less.

[0054] The tensile storage modulus can be increased, for example, by increasing the content of the resin having a higher tensile storage modulus relative to the mass of each layer of the base material layer 21 or relative to the total mass of the base material layer 21. On the other hand, the modulus can be decreased by decreasing the content of the resin having a higher tensile storage modulus.

[0055] The above tensile storage modulus is measured under the following measurement conditions. Measurement device: Solid viscoelasticity measurement device (for example, measurement device name "RSA III" manufactured by TA Instruments) Sample size: initial length 40 mm, width 10 mm, thickness 20 μm (If the thickness is less than 20 μm, multiple sheets are stacked to form a laminate.) Measurement environment: Nitrogen gas atmosphere Heating rate: 10℃ / min, Measurement temperature: -40℃ to 280℃ Read the tensile storage modulus at 90℃ Initial chuck distance: 22.5mm Frequency: 10Hz Distortion: 0.005%

[0056] [Adhesive layer of dicing tape] In this embodiment, the pressure-sensitive adhesive layer 22 contains, for example, an acrylic copolymer, an isocyanate compound, and a polymerization initiator. The adhesive layer 22 may have a thickness of 40 μm or less. The adhesive layer 22 preferably has a thickness of 10 μm or less, more preferably 7 μm or less, and further preferably 5 μm or less. The adhesive layer 22 may have a thickness of 1 μm or more. The shape and size of the adhesive layer 22 are usually the same as those of the base layer 21.

[0057] In this embodiment, the pressure-sensitive adhesive layer 22 contains at least an acrylic copolymer having, as monomer units in the molecule, an alkyl (meth)acrylate unit and a crosslinkable group-containing (meth)acrylate unit. The term "unit" refers to a structure derived from each monomer after polymerization of a monomer (such as 2-ethylhexyl acrylate, hydroxyethyl acrylate, etc.) when polymerizing an acrylic copolymer. The same applies below.

[0058] In this specification, the term "(meth)acrylate" refers to at least one of methacrylate (methacrylic acid ester) and acrylate (acrylic acid ester). The same applies to the term "(meth)acrylic".

[0059] The above acrylic copolymer has at least an alkyl (meth)acrylate unit and a crosslinkable group-containing (meth)acrylate unit as monomer units in the molecule. The monomer units are units that constitute the main chain of the acrylic copolymer. In other words, the monomer units are derived from the monomers used to polymerize the acrylic copolymer. Each side chain in the above acrylic copolymer is included in each monomer unit that constitutes the main chain.

[0060] The alkyl (meth)acrylate unit is derived from an alkyl (meth)acrylate monomer. In other words, the molecular structure after the alkyl (meth)acrylate monomer is polymerized is an alkyl (meth)acrylate unit. The term "alkyl" refers to a hydrocarbon moiety ester-bonded to (meth)acrylic acid.

[0061] The alkyl portion (hydrocarbon) in the alkyl (meth)acrylate unit may be a saturated or unsaturated hydrocarbon. The alkyl portion (hydrocarbon) in the alkyl (meth)acrylate unit may be a straight-chain hydrocarbon, may be a branched-chain hydrocarbon, or may contain a cyclic structure. The alkyl portion (hydrocarbon) in the alkyl (meth)acrylate unit may have 6 or more and 22 or less carbon atoms.

[0062] The acrylic copolymer more preferably contains, as the alkyl (meth)acrylate unit, a saturated alkyl (meth)acrylate unit in which the alkyl portion is a saturated hydrocarbon having 6 to 22 carbon atoms.

[0063] The acrylic copolymer preferably has the highest proportion (molar equivalent) of alkyl(meth)acrylate units having 6 or more carbon atoms in the alkyl moiety among all monomer units in the molecule. For example, alkyl(meth)acrylate units having 6 or more carbon atoms in the alkyl moiety (preferably 8 or more) may account for 50% to 90% of all monomer units in molar equivalent.

[0064] The saturated alkyl (meth)acrylate unit having 6 or more carbon atoms in the alkyl portion preferably does not contain any of a benzene ring, an ether bond (-CH2-O-CH2-), an OH group, a -COOH group, or other polar groups in the molecule. In the saturated alkyl (meth)acrylate unit having 6 or more carbon atoms in the alkyl portion, the alkyl portion does not contain atoms other than C and H, and may be a saturated linear hydrocarbon or a saturated branched hydrocarbon composed of 6 to 10 carbon atoms.

[0065] The acrylic copolymer preferably contains, as the alkyl (meth)acrylate unit, a saturated branched alkyl (meth)acrylate unit having an alkyl moiety with 6 to 10 carbon atoms.

[0066] The structure of the alkyl portion (hydrocarbon portion) of the saturated branched alkyl (meth)acrylate unit may be a saturated branched alkyl structure, and may be an iso structure, a sec structure, a neo structure, or a tert structure. Specifically, examples of the saturated branched alkyl (meth)acrylate unit include isohexyl (meth)acrylate, isoheptyl (meth)acrylate, isooctyl (meth)acrylate, isononyl (meth)acrylate, isodecyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate units. Among these, 2-ethylhexyl (meth)acrylate units are preferred.

[0067] The structure of the alkyl portion (hydrocarbon portion) of the saturated linear alkyl (meth)acrylate unit may be any structure as long as it is a saturated linear alkyl structure. Specifically, examples of the saturated linear alkyl (meth)acrylate unit include n-octyl (meth)acrylate, n-nonyl (meth)acrylate, n-decyl (meth)acrylate, tridecyl (meth)acrylate, lauryl (meth)acrylate, myristyl (meth)acrylate, palmityl (meth)acrylate, stearyl (meth)acrylate, and behenyl (meth)acrylate units.

[0068] The acrylic copolymer may contain one type of alkyl (meth)acrylate unit alone or two or more types of alkyl (meth)acrylate units.

[0069] The crosslinkable group-containing (meth)acrylate unit has a hydroxy group capable of forming a urethane bond by a urethanization reaction, or a polymerizable group capable of polymerizing by a radical reaction. More specifically, the crosslinkable group-containing (meth)acrylate unit has either an unreacted hydroxy group or a radically polymerizable carbon-carbon double bond as a polymerizable group. In other words, a part of the crosslinkable group-containing (meth)acrylate unit has an unreacted hydroxy group, and the other part (all the rest) has no hydroxy group and has a radically polymerizable carbon-carbon double bond.

[0070] The acrylic copolymer has, as the crosslinkable group-containing (meth)acrylate unit, a hydroxy group-containing (meth)acrylate unit in which a hydroxy group is bonded to an alkyl moiety having 4 or less carbon atoms. When the pressure-sensitive adhesive layer 22 contains an isocyanate compound, the isocyanate group of the isocyanate compound and the hydroxy group of the hydroxy group-containing (meth)acrylate unit can easily react with each other. By allowing the acrylic copolymer having a hydroxyl group-containing (meth)acrylate unit and the isocyanate compound to coexist in the adhesive layer 22, the adhesive layer 22 can be appropriately cured. Therefore, the acrylic copolymer can be sufficiently gelled. Therefore, the adhesive layer 22 can exhibit adhesive performance while maintaining its shape.

[0071] The hydroxyl group-containing (meth)acrylate unit is preferably a hydroxyl group-containing C2-C4 alkyl (meth)acrylate unit in which an OH group is bonded to an alkyl portion having from 2 to 4 carbon atoms. The term "C2-C4 alkyl" refers to the number of carbon atoms in the hydrocarbon portion that is ester-bonded to the (meth)acrylic acid. In other words, the hydroxyl group-containing C2-C4 alkyl (meth)acrylic monomer refers to a monomer in which (meth)acrylic acid is ester-bonded to an alcohol having from 2 to 4 carbon atoms (usually a dihydric alcohol). The same applies hereinafter in this specification. The hydrocarbon portion of the C2-C4 alkyl is usually a saturated hydrocarbon. For example, the hydrocarbon portion of the C2-C4 alkyl is a linear saturated hydrocarbon or a branched saturated hydrocarbon. It is preferable that the hydrocarbon portion of the C2-C4 alkyl does not contain a polar group containing oxygen (O), nitrogen (N), or the like.

[0072] Examples of the hydroxyl group-containing C2-C4 alkyl(meth)acrylate unit include hydroxyethyl(meth)acrylate, hydroxypropyl(meth)acrylate, hydroxyn-butyl(meth)acrylate, and hydroxyiso-butyl(meth)acrylate units. The hydroxyl group (-OH group) may be bonded to a terminal carbon (C) of the hydrocarbon moiety, or to a carbon (C) other than the terminal of the hydrocarbon moiety.

[0073] The acrylic copolymer contains, as the crosslinkable group-containing (meth)acrylate unit, a polymerizable (meth)acrylate unit having a radically polymerizable carbon-carbon double bond (polymerizable unsaturated double bond) in the side chain.

[0074] Specifically, the polymerizable (meth)acrylate unit has a molecular structure in which an isocyanate group of an isocyanate group-containing (meth)acrylic monomer is bonded via urethane to a hydroxy group in the above-mentioned hydroxy group-containing (meth)acrylate unit.

[0075] Since the acrylic copolymer contains a radically polymerizable carbon-carbon double bond of the crosslinkable group-containing (meth)acrylate unit, the pressure-sensitive adhesive layer 22 can be cured by irradiation with active energy rays (ultraviolet rays, etc.) before the above-mentioned pick-up step. For example, irradiation with active energy rays such as ultraviolet rays can generate radicals from a photopolymerization initiator, and the acrylic copolymer can be crosslinked by the action of these radicals. This can reduce the adhesive strength of the pressure-sensitive adhesive layer 22 before irradiation after irradiation. Then, the die-bonding sheet 10 can be peeled off well from the pressure-sensitive adhesive layer 22. The active energy rays include ultraviolet rays, radioactive rays, and electron beams.

[0076] The polymerizable (meth)acrylate unit can be prepared by urethane reaction after polymerization reaction of acrylic copolymer. For example, after copolymerization of alkyl (meth)acrylate monomer and hydroxyl group-containing (meth)acrylic monomer, hydroxyl group in part of hydroxyl group-containing (meth)acrylate unit and isocyanate group of isocyanate group-containing polymerizable monomer can be urethane reaction to obtain polymerizable (meth)acrylate unit.

[0077] The isocyanate group-containing (meth)acrylic monomer preferably has one isocyanate group and one (meth)acryloyl group in the molecule, such as 2-methacryloyloxyethyl isocyanate.

[0078] In this embodiment, the acrylic copolymer may contain a monomer unit other than the above-mentioned monomer units. For example, it may contain each unit such as (meth)acryloylmorpholine, N-vinyl-2-pyrrolidone, or acrylonitrile. The acrylic copolymer contains a (meth)acryloylmorpholine unit as a monomer unit, and by changing the composition ratio of the (meth)acryloylmorpholine unit in the acrylic copolymer, the glass transition point or polarity of the acrylic copolymer can be relatively easily controlled.

[0079] In the acrylic copolymer contained in the pressure-sensitive adhesive layer 22, the above units (constituent units) are 1 H-NMR, 13 This can be confirmed by NMR analysis such as C-NMR, pyrolysis GC / MS analysis, infrared spectroscopy, etc. The molar ratio of the above units in the acrylic copolymer is usually calculated from the blending amount (charge amount) when the acrylic copolymer is polymerized.

[0080] It is preferable that the ratio of the crosslinkable group-containing (meth)acrylate units among all monomer units (100 mol parts) in the above acrylic copolymer is 15 mol parts or more and 60 mol parts or less, and 50% to 95% (molar conversion) of the crosslinkable group-containing (meth)acrylate units form urethane bonds as described above. In other words, it is preferable that the above acrylic copolymer contains 15 mol parts or more and 60 mol parts or less of the crosslinkable group-containing (meth)acrylate units, and 50% to 95% of the crosslinkable group-containing (meth)acrylate units are polymerizable (meth)acrylate units having radical polymerizable carbon-carbon double bonds, when the total monomer units are 100 mol parts. This makes it possible to maintain the adhesive force between the die bond sheet 10 and the pressure-sensitive adhesive layer 22 before curing, while improving the peelability between the die bond sheet 10 and the pressure-sensitive adhesive layer 22 after curing.

[0081] The acrylic copolymer preferably contains 10 to 50 parts by mol of polymerizable (meth)acrylate units when the total monomer units are taken as 100 parts by mol. This allows the adhesive strength between the die-bonding sheet 10 and the pressure-sensitive adhesive layer 22 before curing to be maintained, while improving the peelability between the die-bonding sheet 10 and the pressure-sensitive adhesive layer 22 after curing.

[0082] In this embodiment, the isocyanate compound that may be further contained in the adhesive layer 22 of the dicing tape 20 has a plurality of isocyanate groups in the molecule. When the isocyanate compound has a plurality of isocyanate groups in the molecule, it is possible to promote a crosslinking reaction between the acrylic copolymers in the adhesive layer 22. In detail, it is possible to promote a crosslinking reaction via the isocyanate compound by reacting one isocyanate group of the isocyanate compound with a hydroxy group of the acrylic copolymer and reacting the other isocyanate group with a hydroxy group of another acrylic copolymer. The isocyanate compound may be a compound synthesized via a urethane reaction or the like.

[0083] Examples of the isocyanate compound include diisocyanates such as aliphatic diisocyanates, alicyclic diisocyanates, and araliphatic diisocyanates.

[0084] Further, examples of the isocyanate compound include polymerized polyisocyanates such as dimers and trimers of diisocyanates, and polymethylene polyphenylene polyisocyanates.

[0085] In addition, the isocyanate compound may be, for example, a polyisocyanate obtained by reacting an excess amount of the above-mentioned isocyanate compound with an active hydrogen-containing compound. Examples of the active hydrogen-containing compound include an active hydrogen-containing low molecular weight compound and an active hydrogen-containing high molecular weight compound. As the isocyanate compound, allophanated polyisocyanate, biuretized polyisocyanate, etc. can also be used. The above isocyanate compounds can be used alone or in combination of two or more.

[0086] The isocyanate compound is preferably a reaction product of an aromatic diisocyanate and an active hydrogen-containing low molecular weight compound. The reaction rate of the isocyanate group in the reaction product of the aromatic diisocyanate is relatively slow, so that the pressure-sensitive adhesive layer 22 containing such a reaction product is prevented from being excessively hardened. The isocyanate compound is preferably one having three or more isocyanate groups in the molecule.

[0087] In this embodiment, the polymerization initiator contained in the adhesive layer 22 is a compound that can initiate a polymerization reaction by the energy of heat or light applied. By containing the polymerization initiator in the adhesive layer 22, when heat energy or light energy is applied to the adhesive layer 22, a crosslinking reaction between acrylic copolymers can be promoted. In detail, a polymerization reaction between polymerizable groups between acrylic copolymers having polymerizable (meth)acrylate units containing radically polymerizable carbon-carbon double bonds can be initiated to harden the adhesive layer 22. This reduces the adhesive force of the adhesive layer 22, and in the pick-up process, the die bond sheet 10 can be easily peeled off from the hardened adhesive layer 22. As the polymerization initiator, for example, a photopolymerization initiator or a thermal polymerization initiator is used. As the polymerization initiator, a general commercially available product can be used.

[0088] The pressure-sensitive adhesive layer 22 may further contain other components in addition to the above-mentioned components. Examples of the other components include tackifiers, plasticizers, fillers, antioxidants, antioxidants, UV absorbers, light stabilizers, heat stabilizers, antistatic agents, surfactants, and light release agents. The types and amounts of the other components may be appropriately selected depending on the purpose.

[0089] <Dicing die bond film die bond sheet> As shown in FIG. 1, the die bond sheet 10 is overlaid on the adhesive layer 22 of the dicing tape 20 described above.

[0090] The thickness of the die bond sheet 10 is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 140 μm or less. When the die bond sheet 10 is a laminate, the above thickness is the total thickness of the laminate.

[0091] The die bond sheet 10 may have a single-layer structure, for example, as shown in Fig. 1. In this specification, a single layer means having only a layer formed of the same composition. A form in which a plurality of layers formed of the same composition are laminated is also a single layer. On the other hand, the die bond sheet 10 may have a multilayer structure in which layers formed of, for example, two or more different compositions are laminated. When the die bond sheet 10 has a multilayer structure, at least one layer constituting the die bond sheet 10 may contain a crosslinkable group-containing acrylic polymer described later and may further contain a thermosetting resin as necessary.

[0092] The breaking elongation of the die bond sheet 10 at 0° C. is preferably less than 4.7%, more preferably less than 4.0%, and further preferably less than 3.5%. This allows the die bond sheet to be broken more satisfactorily. That is, it allows the die bond sheet to exhibit better breakability. The breaking elongation may be 0.5% or more.

[0093] The breaking elongation can be increased, for example, by decreasing the content ratio of a filler (described later) in the die bond sheet 10. On the other hand, the breaking elongation can be decreased by increasing the content ratio of a filler in the die bond sheet 10.

[0094] Details of the conditions for measuring the breaking elongation are as follows. Test piece cut out from the die bond sheet: Length 40mm, width 10mm Measurement equipment: Dynamic viscoelasticity measuring equipment (Product name: "RSA-G2" (manufactured by TA Instruments, etc.) Measurement mode: Tensile mode Initial chuck distance: 20mm Pulling speed: 1mm / sec Measurement temperature: 0℃ (measured after 4 minutes at 0℃) In order to prevent the test specimen from cracking when it was fixed to the chuck, two silicone release-treated PET liners (50 μm thick) were used as cushioning materials in the chuck. The test specimen was sandwiched between these PET liners. When the chuck distance before the start of the tensile measurement is L0 and the chuck distance at break is L1, the breaking elongation is calculated using the following formula. Breaking elongation (%) = [(L1-L0) / L0] x 100

[0095] The die bond sheet 10 contains a crosslinkable group-containing acrylic polymer having in its molecule a crosslinkable group that undergoes a crosslinking reaction by a heat curing treatment. Such a crosslinkable group-containing acrylic polymer is a polymer compound in which at least (meth)acrylic acid ester monomers are polymerized.

[0096] The crosslinkable group-containing acrylic polymer generally has the crosslinkable group on a side chain. The crosslinkable group-containing acrylic polymer may have the crosslinkable group at the end of the side chain. The crosslinkable group-containing acrylic polymer may have the crosslinkable group on at least one of both ends of the main chain.

[0097] The crosslinkable group contained in the molecule of the crosslinkable-group-containing acrylic polymer is not particularly limited as long as it is a functional group that undergoes a crosslinking reaction by a heat curing treatment.

[0098] Examples of the crosslinkable group include a hydroxy group or a carboxy group. These crosslinkable groups can undergo a crosslinking reaction with an epoxy group or an isocyanate group. For example, the above-mentioned crosslinkable group-containing acrylic polymer having at least one of a hydroxy group or a carboxy group in the molecule can undergo a crosslinking reaction with a compound having an epoxy group or an isocyanate group in the molecule (e.g., an epoxy resin described later).

[0099] Examples of the crosslinkable group include epoxy groups and isocyanate groups. These crosslinkable groups can undergo crosslinking reactions with hydroxyl groups and carboxyl groups. For example, the above-mentioned crosslinkable group-containing acrylic polymer having at least one of an epoxy group or an isocyanate group in the molecule can undergo crosslinking reactions with a compound having at least one of a hydroxyl group or a carboxyl group in the molecule (e.g., a phenolic resin described later).

[0100] In this embodiment, the crosslinkable group-containing acrylic polymer contained in the die bond sheet 10 preferably contains at least one of a hydroxy group and a carboxy group as a crosslinkable group. This allows the die bond sheet 10 to be more satisfactorily bonded to the adherend.

[0101] In the above-mentioned crosslinkable group-containing acrylic polymer, the proportion of the constituent units of the crosslinkable group-containing monomer may be 0.1% by mass or more and 60.0% by mass or less, 0.5% by mass or more and 40.0% by mass or less, 1.0% by mass or more and 30.0% by mass or less, or 3.0% by mass or more and 20.0% by mass or less. The constitutional unit is a structure derived from each monomer after polymerization of a monomer (for example, 2-ethylhexyl acrylate, hydroxyethyl acrylate, etc.) when polymerizing a crosslinkable group-containing acrylic polymer. The same applies below.

[0102] The above-mentioned crosslinkable group-containing acrylic polymer can be synthesized by a general polymerization method using, for example, a radical polymerization initiator.

[0103] The crosslinkable group-containing acrylic polymer preferably contains the alkyl(meth)acrylate monomer structural unit in the largest amount by mass ratio among the structural units in the molecule. Examples of the alkyl(meth)acrylate monomer include C1-C18 alkyl(meth)acrylate monomers having an alkyl group (hydrocarbon group) with 1 to 18 carbon atoms. The alkyl(meth)acrylate monomer may be, for example, a C1-C12 alkyl(meth)acrylate monomer having an alkyl group (hydrocarbon group) with 1 to 12 carbon atoms.

[0104] Examples of the alkyl (meth)acrylate monomer include saturated linear alkyl (meth)acrylate monomers and saturated branched alkyl (meth)acrylate monomers.

[0105] Examples of the saturated linear alkyl (meth)acrylate monomer include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, n-butyl (meth)acrylate, n-heptyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, n-decyl (meth)acrylate, tridecyl (meth)acrylate, lauryl (meth)acrylate, myristyl (meth)acrylate, palmityl (meth)acrylate, stearyl (meth)acrylate, etc. The number of carbon atoms in the linear alkyl group portion is preferably 2 or more and 8 or less. Examples of the saturated branched alkyl (meth)acrylate monomer include isoheptyl (meth)acrylate, isooctyl (meth)acrylate, isononyl (meth)acrylate, isodecyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc. The alkyl group portion may have any of an iso structure, a sec structure, a neo structure, and a tert structure.

[0106] The above-mentioned crosslinkable group-containing acrylic polymer contains a constituent unit derived from a crosslinkable group-containing monomer copolymerizable with an alkyl (meth)acrylate monomer. In this embodiment, the crosslinkable group-containing acrylic polymer is an acrylic polymer in which at least an alkyl (meth)acrylate monomer and a crosslinkable group-containing monomer are copolymerized. In other words, the crosslinkable group-containing acrylic polymer has a structure in which the constituent units of the alkyl (meth)acrylate monomer and the constituent units of the crosslinkable group-containing monomer are linked in a random order.

[0107] Examples of the crosslinkable group-containing monomer include functional group-containing monomers such as carboxy group-containing (meth)acrylic monomers, acid anhydride (meth)acrylic monomers, hydroxy group-containing (meth)acrylic monomers, epoxy group-containing (glycidyl group)-containing (meth)acrylic monomers, isocyanate group-containing (meth)acrylic monomers, sulfonic acid group-containing (meth)acrylic monomers, phosphoric acid group-containing (meth)acrylic monomers, acrylamide, and acrylonitrile. The crosslinkable group-containing monomers may have an ether group or an ester group in the molecule.

[0108] The crosslinkable group-containing acrylic polymer is preferably at least one crosslinkable group-containing monomer selected from the group consisting of a carboxy group-containing (meth)acrylic monomer, a hydroxy group-containing (meth)acrylic monomer, an epoxy group-containing (meth)acrylic monomer, and an isocyanate group-containing (meth)acrylic monomer; It is a copolymer of alkyl (meth)acrylate (particularly, alkyl (meth)acrylate having an alkyl portion with 8 or less carbon atoms).

[0109] Examples of the carboxy group-containing (meth)acrylic monomer include (meth)acrylic acid, mono(2-(meth)acryloyloxyethyl)succinate monomer, etc. The carboxy group may be located at the terminal portion of the monomer structure, or may be bonded to a hydrocarbon other than the terminal portion. Examples of hydroxyl group-containing (meth)acrylic monomers include hydroxyethyl (meth)acrylate monomers, hydroxypropyl (meth)acrylate monomers, hydroxybutyl (meth)acrylate monomers, etc. The hydroxyl group may be located at the terminal portion of the monomer structure, or may be bonded to a hydrocarbon other than the terminal portion. Examples of epoxy group-containing (meth)acrylic monomers include glycidyl (meth)acrylate monomer, 4-hydroxybutyl (meth)acrylate glycidyl ether, etc. The epoxy group may be located at the terminal portion of the monomer structure, or may be bonded to a hydrocarbon other than the terminal portion. Examples of the isocyanate group-containing (meth)acrylic monomer include 2-methacryloyloxyethyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate, 2-acryloyloxyethyl isocyanate, and 2-(2-methacryloyloxyethyloxy)ethyl isocyanate.

[0110] The die bond sheet 10 may contain a component other than the above-mentioned crosslinkable group-containing acrylic polymer. For example, the die bond sheet 10 may further contain at least one of a thermosetting resin and a thermoplastic resin other than the above-mentioned crosslinkable group-containing acrylic polymer.

[0111] Examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, thermosetting polyimide resin, etc. As the thermosetting resin, only one type or two or more types may be used.

[0112] Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins.

[0113] Phenol resins can act as curing agents for epoxy resins. Examples of phenol resins include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrenes such as polyparaoxystyrene. Examples of novolac-type phenolic resins include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. The hydroxyl equivalent [g / eq] of the phenol resin may be, for example, 90 or more and 220 or less. As the phenolic resin, one kind or two or more kinds may be adopted.

[0114] In the present embodiment, the die bond sheet 10 may contain the above-mentioned crosslinkable group-containing acrylic polymer and thermosetting resin, which undergo a crosslinking reaction with each other.

[0115] For example, the die bond sheet 10 may contain an epoxy group-containing acrylic polymer as the crosslinkable group-containing acrylic polymer and a phenol resin as the thermosetting resin, whereby the epoxy group of the crosslinkable group-containing acrylic polymer and the hydroxyl group of the phenol resin undergo a crosslinking reaction to sufficiently harden the die bond sheet 10.

[0116] Examples of thermoplastic resins other than the above-mentioned crosslinkable group-containing acrylic polymer that may be included in the die bond sheet 10 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resins such as 6-polyamide resin and 6,6-polyamide resin, phenoxy resin, acrylic resin that does not contain a crosslinkable functional group in the molecule, saturated polyester resins such as PET and PBT, polyamideimide resin, fluororesin, etc. As the thermoplastic resin, one kind or two or more kinds may be adopted.

[0117] In the die bond sheet 10, the content of the above-mentioned crosslinkable group-containing acrylic polymer is preferably 8% by mass or more and 100% by mass or less.

[0118] In the die bond sheet 10, the content of the crosslinkable group-containing acrylic polymer is preferably 15 parts by mass or more and 100 parts by mass or less, more preferably 40 parts by mass or more and 95 parts by mass or less, and even more preferably 60 parts by mass or more, relative to 100 parts by mass of organic components other than the filler (for example, the above-mentioned crosslinkable group-containing acrylic polymer, thermosetting resin, curing catalyst, etc., silane coupling agent, dye). By changing the content of the thermosetting resin in the die bond sheet 10, the elasticity and viscosity of the die bond sheet 10 can be adjusted. On the other hand, the content of the thermosetting resin may be 40 parts by mass or less per 100 parts by mass of the organic component.

[0119] The die bond sheet 10 may or may not contain a filler. By changing the amount of the filler in the die bond sheet 10, the elasticity and viscosity of the die bond sheet 10 can be more easily adjusted. Furthermore, the physical properties of the die bond sheet 10, such as electrical conductivity, thermal conductivity, and elastic modulus, can be adjusted.

[0120] The filler may be an inorganic filler or an organic filler, and the inorganic filler is preferred. Examples of inorganic fillers include fillers containing aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, silica such as crystalline silica and amorphous silica, etc. Examples of materials for inorganic fillers include simple metals such as aluminum, gold, silver, copper, nickel, etc., and alloys. Fillers such as aluminum borate whiskers, amorphous carbon black, graphite, etc. The shape of the filler may be various shapes such as spherical, needle-like, and flake-like. As the filler, only one of the above types or two or more types are used.

[0121] When the die bond sheet 10 contains a filler, the content of the filler may be 50 mass % or less of the total mass of the die bond sheet 10. The content of the filler may be, for example, 5 mass % or more.

[0122] The die bond sheet 10 may contain other components as necessary. Examples of the other components include a curing catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, and a dye. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, and benzotriazole. As the other additives, one kind may be used alone, or two or more kinds may be used in combination.

[0123] The die bond sheet 10 preferably contains the above-mentioned crosslinkable group-containing acrylic polymer, thermosetting resin, and filler, in that the elasticity and viscosity can be easily adjusted.

[0124] The dicing die bond film 1 of this embodiment may have a release liner that covers one side of the die bond sheet 10 (the side where the die bond sheet 10 does not overlap the pressure-sensitive adhesive layer 22) before use. The release liner is used to protect the die bond sheet 10, and is peeled off immediately before attaching an adherend (e.g., a semiconductor wafer) to the die bond sheet 10. As the release liner, for example, a plastic film or paper that has been surface-treated with a release agent such as a silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide-based release agent can be used. The release liner can be used as a support material for supporting the die bond sheet 10. The release liner is suitably used when the die bond sheet 10 is overlaid on the pressure-sensitive adhesive layer 22. In detail, the die bond sheet 10 is overlaid on the pressure-sensitive adhesive layer 22 in a state in which the release liner and the die bond sheet 10 are laminated, and after the overlaying, the release liner is peeled off (transferred), thereby overlaying the die bond sheet 10 on the pressure-sensitive adhesive layer 22.

[0125] Next, a manufacturing method of the die bond sheet 10 and the dicing die bond film 1 of this embodiment will be described.

[0126] <Dicing die bond film manufacturing method> The manufacturing method of the dicing die bond film 1 of this embodiment is as follows: A step of producing a die bond sheet 10; A step of preparing a dicing tape 20; The method includes a step of overlapping the manufactured die bond sheet 10 and the dicing tape 20.

[0127] <Process for producing die bond sheet> The process of producing the die bond sheet 10 includes the following steps: A resin composition preparation step of preparing a resin composition for forming the die bond sheet 10; and a die-bonding sheet forming step of forming the die-bonding sheet 10 from the resin composition.

[0128] In the resin composition preparation step, for example, the above-mentioned crosslinkable group-containing acrylic polymer is mixed with either an epoxy resin, a phenolic resin, a curing catalyst, or a solvent, and each resin is dissolved in the solvent to prepare a resin composition. The viscosity of the composition can be adjusted by changing the amount of the solvent. Commercially available products can be used as these resins.

[0129] In the die-bonding sheet forming step, for example, the resin composition prepared as described above is applied to a release liner. The application method is not particularly limited, and for example, a general application method such as roll coating, screen coating, gravure coating, etc. is adopted. Next, if necessary, the applied composition is solidified by a solvent removal treatment, a curing treatment, etc., to form the die-bonding sheet 10.

[0130] <Process for producing dicing tape> The process for producing the dicing tape includes the following steps: A synthesis step of synthesizing an acrylic copolymer; A pressure-sensitive adhesive layer preparation step of preparing a pressure-sensitive adhesive layer 22 by volatilizing a solvent from a pressure-sensitive adhesive composition containing the above-mentioned acrylic copolymer, an isocyanate compound, a polymerization initiator, a solvent, and other components that are appropriately added depending on the purpose; a base layer preparation step of preparing a base layer 21; The method further includes a lamination step of laminating the adhesive layer 22 and the base layer 21 together to laminate the base layer 21 and the adhesive layer 22 together.

[0131] In the synthesis step, for example, a C6 to C12 alkyl (meth)acrylate monomer having an alkyl moiety with 6 to 12 carbon atoms and a hydroxyl group-containing (meth)acrylic monomer are radically polymerized to synthesize an acrylic copolymer intermediate. The radical polymerization can be carried out by a general method. For example, the above-mentioned monomers are dissolved in a solvent, stirred while heating, and a polymerization initiator is added to synthesize an acrylic copolymer intermediate. In order to adjust the molecular weight of the acrylic copolymer, the polymerization may be carried out in the presence of a chain transfer agent. Next, some of the hydroxyl groups of the hydroxyl group-containing (meth)acrylate units contained in the acrylic copolymer intermediate are bonded to the isocyanate groups of the isocyanate group-containing polymerizable monomer by a urethane reaction, whereby some of the hydroxyl group-containing (meth)acrylate units become polymerizable (meth)acrylate units containing radical polymerizable carbon-carbon double bonds. The urethane reaction can be carried out by a general method. For example, the acrylic copolymer intermediate and the isocyanate group-containing polymerizable monomer are stirred while being heated in the presence of a solvent and a urethane catalyst. This allows the isocyanate group of the isocyanate group-containing polymerizable monomer to be urethane-bonded to a part of the hydroxyl group of the acrylic copolymer intermediate.

[0132] In the pressure-sensitive adhesive layer preparation step, for example, an acrylic copolymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare a pressure-sensitive adhesive composition. The viscosity of the composition can be adjusted by changing the amount of the solvent. Next, the pressure-sensitive adhesive composition is applied to a release liner. As a coating method, for example, a general coating method such as roll coating, screen coating, or gravure coating is adopted. The applied composition is subjected to a solvent removal treatment, a solidification treatment, or the like to solidify the applied pressure-sensitive adhesive composition, thereby preparing the pressure-sensitive adhesive layer 22.

[0133] In the base layer preparation step, the base layer can be prepared by film formation using a general method. Examples of the film formation method include a calendar film formation method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, and a dry lamination method. A co-extrusion molding method may also be adopted. In addition, commercially available films and the like may be used as the base layer 21 or each layer constituting the base layer 21.

[0134] In the lamination step, the pressure-sensitive adhesive layer 22 overlapping the release liner is laminated on the base layer 21. The release liner may remain overlapping the pressure-sensitive adhesive layer 22 until use. In addition, in order to promote the reaction between the crosslinking agent and the acrylic copolymer and also between the crosslinking agent and the surface portion of the base layer 21, an aging treatment process may be carried out for 48 hours in an environment of 50°C after the lamination process.

[0135] Through these steps, the dicing tape 20 can be manufactured.

[0136] <Process of overlapping the die bond sheet and dicing tape> In the step of overlapping the die bond sheet 10 and the dicing tape 20, the die bond sheet 10 is attached to the adhesive layer 22 of the dicing tape 20 manufactured as described above.

[0137] In such attachment, the release liners are peeled off from the adhesive layer 22 of the dicing tape 20 and the die bond sheet 10, and the die bond sheet 10 and the adhesive layer 22 are attached together so that they are in direct contact with each other. For example, they can be attached by pressure bonding. The temperature during attachment is not particularly limited, and is, for example, 30°C or higher and 50°C or lower, and preferably 35°C or higher and 45°C or lower. The linear pressure during attachment is not particularly limited, and is preferably 0.1kgf / cm or higher and 20kgf / cm or lower, and more preferably 1kgf / cm or higher and 10kgf / cm or lower.

[0138] The dicing die bond film 1 manufactured as described above through the above-mentioned steps is used, for example, as an auxiliary tool for manufacturing a semiconductor device (semiconductor integrated circuit).

[0139] A method for manufacturing a semiconductor device using the above-mentioned dicing die bond film 1 is, for example, A method for manufacturing a semiconductor device, comprising: manufacturing a semiconductor device having a semiconductor chip by using a dicing die bond film comprising the above dicing tape and the above die bond sheet overlapped on the dicing tape; a mounting step of fixing the semiconductor wafer to the dicing tape via the die bond sheet by disposing the die bond sheet between the adhesive layer of the dicing tape and the semiconductor wafer; an expanding step of splitting the semiconductor wafer together with the die bond sheet by stretching the dicing tape to obtain a group of semiconductor chips by dividing the semiconductor wafer into small pieces; A portion of the stretched dicing tape around the group of semiconductor chips is heated and caused to shrink.

[0140] The method for manufacturing a semiconductor device (method for using a dicing die bond film) will be described in more detail below.

[0141] <Method of manufacturing a semiconductor device (method of using a dicing die bond film when manufacturing a semiconductor device)> In a manufacturing method of a semiconductor device, generally, semiconductor chips are cut out from a semiconductor wafer having a circuit surface formed thereon and assembled. At this time, the dicing die bond film of the present embodiment is used as a manufacturing auxiliary tool.

[0142] The method for manufacturing a semiconductor device according to the present embodiment includes the steps of: A method for manufacturing a semiconductor device, comprising: a dicing die bond film including a dicing tape having a base layer and an adhesive layer overlaid on the base layer; and a die bond sheet overlaid on the dicing tape, the method comprising: manufacturing a semiconductor device having a semiconductor chip using the dicing die bond film. The manufacturing method of the semiconductor device of this embodiment includes a mounting process in which one side of a semiconductor wafer is attached to the die bond sheet 10 of the above-mentioned dicing die bond film 1, and the semiconductor wafer is fixed to the dicing tape 20 via the die bond sheet 10; and an expanding step of stretching the dicing tape 20 to cleave the semiconductor wafer together with the die bond sheet 10 at the fragile portion of the semiconductor wafer as a boundary. Furthermore, the manufacturing method of the semiconductor device of this embodiment includes a pick-up step of peeling the small pieces of die bond sheet 10 attached to the adhesive layer 22 of the dicing tape 20 from the adhesive layer 22 together with the semiconductor chip.

[0143] In detail, the manufacturing method of the semiconductor device of this embodiment includes, for example, a stealth dicing process in which a weak portion is formed by laser light inside a semiconductor wafer to which a backgrind tape is attached, and the semiconductor wafer is prepared for processing into a semiconductor chip (die) by a fracturing process; a backgrinding process in which the semiconductor wafer to which the backgrind tape is attached is ground to reduce its thickness; the mounting process in which one side (for example, the side opposite to the circuit side) of the thinned semiconductor wafer is attached to a die bond sheet 10 and the semiconductor wafer is fixed to the dicing tape 20 via the die bond sheet 10; the expanding process in which the dicing tape 20 is stretched to fractur e the semiconductor wafer to produce semiconductor chips and to widen the gap between adjacent semiconductor chips; and the pick-up process in which the die bond sheet 10 is peeled off from the adhesive layer 22, and the semiconductor chip (die) is taken out with the die bond sheet 10 attached. The manufacturing method of the semiconductor device of this embodiment further includes a die bonding process in which the die bond sheet 10 attached to the semiconductor chip is adhered to an adherend, a curing process in which the die bond sheet 10 adhered to the adherend is hardened, a wire bonding process in which the electrodes of the electronic circuit in the semiconductor chip are electrically connected to the adherend by wires, and a sealing process in which the semiconductor chip and wires on the adherend are sealed with a thermosetting resin.

[0144] The stealth dicing process is a process in the so-called SDBG (Stealth Dicing Before Grinding) process. In the stealth dicing process, as shown in Figs. 3A to 3C, a weak part for cleaving a pattern wafer on which a circuit surface is formed into semiconductor chips is formed inside the semiconductor wafer W. Specifically, first, a backgrind tape G is attached to the circuit surface of the semiconductor wafer W (see Fig. 3A). Next, with the backgrind tape G attached, the semiconductor wafer W is subjected to a grinding process (pre-backgrinding process) using a grinding pad K until it reaches a predetermined thickness (see Fig. 3B). Then, a laser beam is applied to the thinned semiconductor wafer W to form a weak part inside the semiconductor wafer W (see Fig. 3C).

[0145] Instead of the stealth dicing process, a half-cut process may be performed. The half-cut process is a process in the so-called DBG (Dicing Before Grinding) process. In the half-cut process, a groove is formed in the semiconductor wafer in order to process the semiconductor wafer into semiconductor chips (dies) by a fracturing process, and then the semiconductor wafer is ground to reduce its thickness. Specifically, in the half-cut process, a half-cut process is performed to split a semiconductor wafer with a circuit surface into semiconductor chips (dies). More specifically, a wafer processing tape is attached to the surface of the semiconductor wafer opposite to the circuit surface. With the wafer processing tape attached to the semiconductor wafer, grooves for dividing are formed in the semiconductor wafer. A backgrind tape is attached to the surface with the grooves formed, while the wafer processing tape that was initially attached is peeled off.

[0146] The dicing die bond film of this embodiment is preferably used in a Stealth Dicing Before Grinding (SDBG) process or a Dicing Before Grinding (DBG) process for manufacturing semiconductor chips by cleaving a semiconductor wafer as described above.

[0147] In the back grinding process, as shown in Fig. 3D, the semiconductor wafer W with the back grinding tape G attached thereto is further ground to reduce the thickness of the semiconductor wafer W to the thickness of the semiconductor chip (die) to be fabricated by the subsequent cleaving process. For example, the half-cut semiconductor wafer W is ground until it has a predetermined thickness so as not to be individualized. By performing the grinding process in this manner, the semiconductor wafer W is cleaved into semiconductor chips and the die bond sheet 10 is also cleaved at the same time in the subsequent expanding process (particularly the low-temperature expanding process).

[0148] In the mounting step, as shown in Figures 4A and 4B, the semiconductor wafer W is fixed to the dicing tape 20. In detail, the semiconductor wafer W, the thickness of which has been reduced by the above-mentioned cutting process, is attached to the exposed surface of the die bond sheet 10 while the dicing ring R is attached to the adhesive layer 22 of the dicing tape 20 (see Figure 4A). Then, the backgrind tape G is peeled off from the semiconductor wafer W (see Figure 4B).

[0149] In the expanding step, as shown in Figs. 5A to 5C, the semiconductor wafer W is cleaved to separate the semiconductor wafer W into small pieces, and the diced semiconductor chips X are fabricated, and the intervals between the fabricated semiconductor chips X are widened. In detail, a dicing ring R is attached to the adhesive layer 22 of the dicing tape 20, and then fixed to a holder H of an expanding device (see Fig. 5A). A push-up member U provided in the expanding device is pushed up from the lower side of the dicing die bond film 1, thereby stretching the dicing die bond film 1 so as to expand it in the surface direction (see Fig. 5B). As a result, the semiconductor wafer W is cleaved under a specific temperature condition. The above temperature condition is, for example, -20 to 0°C, preferably -15 to 0°C, and more preferably -10 to -5°C. The expanded state is released by lowering the push-up member U (see Fig. 5C, low-temperature expanding step up to this point). 6A to 6B, the dicing tape 20 is stretched so as to expand its area under higher temperature conditions (for example, 10° C. to 25° C.). As a result, adjacent semiconductor chips X are separated in the planar direction of the film surface after cleavage, and the kerf (the distance between adjacent semiconductor chips) is further expanded (room temperature expansion process).

[0150] In this embodiment, the dicing tape 20 is stretched in the planar direction by the expanding process. At this time, if the dicing tape 20 is not heat-treated around the group of many small semiconductor chips, the dicing tape 20 at the portion overlapping the group of many semiconductor chips (the central portion) will shrink so as to return to its original shape. In order to prevent the dicing tape 20 from shrinking in this way, a heat treatment is applied to a part of the dicing tape 20 along the periphery of the group of many small semiconductor chips. The heat treatment is performed, for example, so that the surface of the heated portion of the dicing tape 20 is about 90°C or more and 120°C or less. In a specific example, the heat treatment is performed on the part of the dicing tape 20 that does not overlap with the group of many semiconductor chips and that is along the periphery of the group of many semiconductor chips. The heat treatment in this case is performed using a heater S or the like that can move in the circumferential direction along the periphery of the group of many small semiconductor chips, as shown in FIG. 7, for example. In the heat treatment, if the temperature is set so that the surface of the heated portion of the dicing tape 20 is about 120° C. or less, the temperature of the dicing tape 20 in the heat treated portion can be less than 100° C. Note that the temperature setting of the heater S itself, the setting of the rotation speed (movement speed) of the heater S, and the setting of the distance from the heater S to the dicing tape can affect the temperature of the dicing tape 20 when it is heated. Therefore, these settings are adjusted as appropriate according to the production conditions, etc.

[0151] Before the pick-up step, for example, the adhesive layer 22 overlapping the base layer 21 is irradiated with ultraviolet light from the base layer 21 side to perform a curing treatment on the adhesive layer 22 (curing treatment step).

[0152] 8, in the pick-up process, the semiconductor chip X with the die bond sheet 10 attached thereto is peeled off from the adhesive layer 22 of the dicing tape 20. More specifically, the pin members P are raised to push up the semiconductor chip X to be picked up through the dicing tape 20. The pushed-up semiconductor chip X is held by a suction jig J.

[0153] In the die bonding process, the semiconductor chip X with the die bond sheet 10 attached thereto is bonded to an adherend Z. In the die bonding process, for example, as shown in FIG. 9, the semiconductor chips X with the die bond sheet 10 attached thereto may be stacked multiple times.

[0154] In the curing process, a heat treatment is performed at a temperature of, for example, 100°C or higher and 180°C or lower in order to increase the reaction activity of the crosslinkable groups (e.g., epoxy groups) in the above-mentioned crosslinkable group-containing acrylic polymer contained in the die bond sheet 10 and promote the hardening of the die bond sheet 10.

[0155] In the wire bonding process, a semiconductor chip X (die) and an adherend Z are connected with a wire L while being heated (see, for example, FIG. 9).

[0156] 10, the semiconductor chip X and the die bond sheet 10 are sealed with a thermosetting resin M such as an epoxy resin. In the sealing process, in order to promote a curing reaction of the thermosetting resin M, a heat treatment is performed at a temperature of, for example, 100° C. or higher and 180° C. or lower.

[0157] In recent years, with further advances in integration technology in the semiconductor industry, there is a demand for thinner semiconductor chips (e.g., a thickness of 20 μm or more and 50 μm or less) and thinner die bond sheets (e.g., a thickness of 1 μm or more and 40 μm or less, preferably 7 μm or less, and more preferably 5 μm or less).

[0158] In the above-mentioned method for manufacturing a semiconductor device (method for using a dicing die bond film), in the expanding step (particularly the room temperature expanding step), the dicing tape 20 is stretched with a strong force in the surface direction so as to expand the area of ​​the dicing tape 20. After the dicing tape 20 is stretched, a part of the dicing tape 20 is heat-treated (for example, at about 120° C.) to cause it to shrink. Specifically, the dicing tape 20 in the part (outer peripheral part) along the outer periphery of the group of many semiconductor chips that does not overlap with the diced semiconductor chips is shrunk by heat treatment. Such heat treatment is performed by moving a heater S or the like along the outer periphery of the group of many diced semiconductor chips, for example, as shown in FIG. 7. Specifically, two heaters or the like move so as to make half a revolution along the outer periphery of the group of many semiconductor chips. The temperature of the heat treatment is preferably low from the viewpoint of energy saving. Therefore, for example, the temperature of the heat treatment may be set so that the maximum temperature of the dicing tape itself is less than 100°C. In such a case, a part of the dicing tape 20 may not be able to shrink sufficiently by the heat treatment. If the dicing tape 20 cannot shrink sufficiently in the portion (peripheral portion) along the outer periphery of the semiconductor chip group, the force of the dicing tape 20 shrinking in the opposite direction to the stretching direction may not be suppressed sufficiently. In such a state, the dicing tape 20 in the portion overlapping with the multiple semiconductor chip groups is likely to shrink, and there is a possibility that the separation distance (kerf) between adjacent semiconductor chips cannot be sufficiently maintained. In contrast, in the dicing die bond film 1 of this embodiment, the dicing tape 20 has a first base layer 21a containing an ethylene-acrylic acid copolymer resin and a second base layer 21b containing a resin other than ethylene-acrylic acid copolymer resin (such as ethylene-vinyl acetate copolymer resin), and the second base layer 21b is disposed between the first base layer 21a and the adhesive layer 22 of the dicing tape 20. Therefore, the dicing tape 20 can be sufficiently shrunk even by a relatively low-temperature heat treatment, and the force of shrinking as described above can be sufficiently suppressed. Therefore, the dicing tape 20 of this embodiment can be shrunk even when heated at a relatively low temperature after being stretched in the expanding process, and the separation distance (kerf) between adjacent semiconductor chips can be sufficiently maintained.

[0159] The dicing die bond film of this embodiment is as exemplified above, but the present invention is not limited to the dicing die bond film exemplified above. That is, various forms used in general dicing die bond films can be adopted within the scope that does not impair the effects of the present invention.

[0160] The matters disclosed in this specification include the following. (1) A substrate layer and a pressure-sensitive adhesive layer overlaid on one side of the substrate layer, the base layer has a plurality of laminated layers, and the plurality of layers include at least a first base layer containing an ethylene-acrylic acid copolymer resin and a second base layer containing a resin other than the ethylene-acrylic acid copolymer resin; A dicing tape, wherein the second base layer is disposed between the first base layer and the pressure-sensitive adhesive layer. (2) The dicing tape according to the above (1), wherein the second base layer contains at least an ethylene-vinyl acetate copolymer resin. (3) The substrate layer further includes a third substrate layer containing an ethylene-acrylic acid copolymer resin, The dicing tape according to (1) or (2) above, wherein the second base material layer is disposed between the first base material layer and the third base material layer. (4) The dicing tape according to any one of (1) to (3) above, wherein the tensile storage modulus of the first base material layer at 90° C. is greater than the tensile storage modulus of the second base material layer. (5) The dicing tape according to (3) or (4) above, wherein the tensile storage modulus of the first base material layer and the third base material layer at 90° C. is both greater than the tensile storage modulus of the second base material layer. (6) The dicing tape according to any one of (1) to (5) above, wherein an absolute value of a difference between a melting point of the first base material layer and a melting point of the second base material layer is 10° C. or less. (7) The dicing tape according to any one of (1) to (6) above, wherein the maximum absolute value of the difference between the melting point of the first base material layer or the third base material layer and the melting point of the second base material layer is 10°C or less. (8) The dicing tape according to any one of (1) to (7) above, wherein a chart obtained by measuring the base layer by differential scanning calorimetry does not have an endothermic peak having an apex at a temperature of 100° C. or higher. (9) The dicing tape according to any one of (1) to (8) above, wherein the base layer has a tensile storage modulus at 90° C. of 1.0 MPa or more. (10) The dicing tape according to any one of (1) to (9) above, which is used for manufacturing a semiconductor device. (11) A dicing die bond film comprising the dicing tape according to any one of (1) to (10) above and a die bond sheet superimposed on the dicing tape. (12) A method for manufacturing a semiconductor device, comprising: a dicing die bond film comprising the dicing tape according to any one of (1) to (10) above and a die bond sheet overlapping the dicing tape; and a semiconductor device having a semiconductor chip, a mounting step of fixing the semiconductor wafer to the dicing tape via the die bond sheet by disposing the die bond sheet between the adhesive layer of the dicing tape and the semiconductor wafer; an expanding step of splitting the semiconductor wafer together with the die bond sheet by stretching the dicing tape to obtain a group of semiconductor chips by dividing the semiconductor wafer into small pieces; a part of the stretched dicing tape is heated around the group of semiconductor chips to cause it to shrink; EXAMPLES

[0161] The present invention will now be described in more detail with reference to experimental examples, but the present invention is not limited to these.

[0162] A dicing tape was produced as follows. The dicing tape was then attached to a die bond sheet to produce a dicing die bond film.

[0163] <Preparation of dicing tape> [Base material layer] Using the resins (commercially available products) shown below, three-layer or two-layer laminated substrate layers (A to I) were prepared. (Resin film for forming base layer) EAA-containing layer 1 Melting point 95°C Tensile modulus (90°C) 2.62 [MPa] Main component: Ethylene-acrylic acid copolymer resin (EAA) 1 Other ingredients: Polymer-type antistatic agent EAA-containing layer 2 Melting point 102°C Tensile modulus (90°C) 4.23 [MPa] Main component: Ethylene-acrylic acid copolymer resin (EAA) 2 Other ingredients: Polymer-type antistatic agent EVA-containing layer 1 Melting point 88°C Tensile modulus (90°C) 1.01 [MPa] Ethylene-vinyl acetate copolymer (EVA) 1 EVA-containing layer 2 Melting point 94°C Tensile modulus (90°C) 1.05 [MPa] Ethylene-vinyl acetate copolymer (EVA)2 EVA-containing layer 3 Melting point 94°C Tensile modulus (90°C) 1.31 [MPa] Main component: Ethylene-vinyl acetate copolymer (EVA) 2 Other ingredients: Polymer-type antistatic agent PP-containing layer 1 Melting point 124°C Tensile modulus (90°C) 24.7 [MPa] Main component: Polypropylene resin 1 Other ingredients: Polymer-type antistatic agent PP-containing layer 2 Melting point 92°C Tensile modulus (90°C) 1.92 [MPa] Main component: Polypropylene resin 1 Other ingredients: Ethylene-vinyl acetate copolymer (EVA) 1

[0164] (Forming of base layer) The substrate layer was molded using an extrusion T-die molding machine. The extrusion temperature was 190°C. When preparing a two-layer or three-layer laminated substrate layer, each layer was integrated by co-extrusion molding from a T-die. After the integrated substrate layer (laminate) was sufficiently solidified, the substrate layer was wound into a roll and stored. The details of the configuration of the base material layer are as shown in Table 1.

[0165] [Table 1]

[0166] [Adhesive layer] The pressure-sensitive adhesive layers a, b, and c were each prepared as follows.

[0167] [Adhesive layer a] (Raw material monomer for acrylic copolymer) 2-Hydroxyethyl acrylate (HEA): 20 parts by weight 2-Ethylhexyl acrylate (2EHA): 100 parts by weight The above raw materials were placed in the same reaction vessel as above. 0.2 parts by mass of azobisisobutyronitrile (AIBN) was used as a thermal polymerization initiator for a total of 100 parts by mass of monomers. Toluene was added as a reaction solvent so that the concentration of the total monomers was 60% by mass. The polymerization reaction was carried out in a nitrogen stream at 62°C for 6 hours and then at 75°C for 2 hours to obtain an acrylic copolymer intermediate. Next, 2-methacryloyloxyethyl isocyanate (hereinafter, MOI) (product name "Karenz MOI" manufactured by Showa Denko Materials Co., Ltd.) was added to the liquid containing the obtained acrylic copolymer intermediate so that the amount was 80 mol% in molar terms relative to the total amount of HEA, and 0.03 mass% of dibutyltin dilaurate relative to the MOI was added as a reaction catalyst. After that, an addition reaction treatment (urethanization reaction) was carried out in an air stream at 50°C for 12 hours to obtain an acrylic copolymer. Next, 2.5 parts by mass of a photopolymerization initiator (product name "Omnirad127" manufactured by IGM), 0.8 parts by mass of a polyisocyanate compound (product name "Takenate D-101A"), and 0.01 parts by mass of an antioxidant (the above "Irganox1010") were added to 100 parts by mass of the acrylic copolymer to prepare an adhesive solution. The prepared adhesive solution was applied onto the treated surface of a silicone-treated PET release liner. A heat drying treatment was performed at 120°C for 2 minutes to form an adhesive layer with a thickness of 5 μm. [Adhesive layer b] (Raw material monomer for acrylic copolymer) Acryloylmorpholine (ACMO): 8 parts by weight 2-Hydroxyethyl acrylate (HEA): 20 parts by weight 2-Ethylhexyl acrylate (2EHA): 72 parts by weight The above raw materials were placed in a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirrer. 0.2 parts by mass of azobisisobutyronitrile (AIBN) was used as a thermal polymerization initiator for a total of 100 parts by mass of monomers. Ethyl acetate was added as a reaction solvent so that the concentration of the total monomers was 35% by mass. The polymerization reaction was carried out in a nitrogen stream at 62°C for 5 hours and then at 75°C for 2 hours to obtain an acrylic copolymer intermediate. Next, the above-mentioned MOI was added to the liquid containing the intermediate acrylic copolymer obtained so that the amount was 80 mol% in terms of moles relative to the total amount of HEA, and 0.03 mass% of dibutyltin dilaurate was added as a reaction catalyst relative to the amount of MOI. After that, an addition reaction treatment (urethanization reaction) was carried out in an air stream at 50°C for 12 hours to obtain an acrylic copolymer. Next, 2.5 parts by mass of a photopolymerization initiator (product name "Omnirad127"), 1.00 parts by mass of a polyisocyanate compound (product name "Takenate D-101A"), and 0.01 parts by mass of an antioxidant (product name "Irganox1010" manufactured by BASF Japan) were added to 100 parts by mass of the acrylic copolymer to prepare an adhesive solution. The prepared adhesive solution was applied onto the treated surface of a silicone-treated PET release liner. A heat drying treatment was performed at 120°C for 2 minutes to form an adhesive layer with a thickness of 5 μm.

[0168] [Adhesive layer c] To the liquid containing the acrylic copolymer obtained in the adhesive layer a, 2.5 parts by mass of a photopolymerization initiator (product name "Omnirad127"), 0.5 parts by mass of a polyisocyanate compound (product name "Takenate D-101A"), and 0.01 parts by mass of an antioxidant ("Irganox1010" manufactured by BASF Japan) were added per 100 parts by mass of the acrylic copolymer to prepare an adhesive solution. The prepared adhesive solution was applied onto the treated surface of a silicone-treated PET release liner. A heat drying treatment was performed at 120°C for 2 minutes to form an adhesive layer having a thickness of 5 μm.

[0169] [Lamination of adhesive layer and base layer] Next, the adhesive layer prepared as described above was attached to the base layer within 1 hour after preparation of the adhesive layer, and stored at 50° C. for 24 hours to prepare a dicing tape. In addition, the first base material layer shown in Table 2 is disposed so as to be farthest from the pressure-sensitive adhesive layer, and the second base material layer is disposed closer to the pressure-sensitive adhesive layer than the first base material layer. When the base material layer has a three-layer structure, the third base material layer overlaps one side of the pressure-sensitive adhesive layer.

[0170] <Preparation of die bond sheet> The die bond sheets α, β, and γ were each produced as follows. [Die bond sheet α] Acrylic polymer (product name "SG-P3", Nagase ChemteX Corporation, glass transition temperature 12°C, containing epoxy groups) 35 parts by mass (solid content), Epoxy resin (product name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by weight, Phenolic resin (product name "MEHC-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 50 parts by weight, Silica filler (product name "SO-25R", manufactured by Admatechs Co., Ltd.) 100 parts by weight, - 0.5 parts by weight of curing catalyst (product name "Curesol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) The above-mentioned raw materials were each added to a predetermined amount of methyl ethyl ketone and mixed to prepare a bonding composition solution having a total solids concentration of 20 mass %. Next, the adhesive composition was applied to the silicone release-treated surface of the PET release liner using an applicator to form a coating film. The coating film was subjected to a heat drying treatment at 130°C for 2 minutes to prepare a die bond sheet having a thickness of 10 μm on the PET release liner.

[0171] [Die bond sheet β] Acrylic polymer (product name "SG-P3", Nagase ChemteX Corporation, glass transition temperature 12°C, containing epoxy groups) 35 parts by mass (solid content), 30 parts by mass (solid content) of acrylic polymer (acrylic resin solution obtained by dissolving a copolymer of ethyl acrylate, butyl methacrylate, and glycidyl methacrylate in methyl ethyl ketone: weight average molecular weight Mw = 70,000 / epoxy equivalent = 444 (g / eq) / glass transition temperature Tg = 11°C), Phenolic resin (product name "MEHC-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 6 parts by weight, Silica filler (product name "SE2050-MCV", manufactured by Admatechs Co., Ltd.) 27 parts by weight, Silane coupling agent (product name "KBM-403", Shin-Etsu Chemical Co., Ltd.) 2 parts by weight The above-mentioned raw materials were each added to a predetermined amount of methyl ethyl ketone and mixed to prepare a bonding composition solution having a total solids concentration of 15 mass %. Next, using the prepared adhesive composition, a die bond sheet having a thickness of 10 μm was produced on a PET release liner in the same manner as above.

[0172] [Die bond sheet γ] Acrylic polymer (product name "PARACRON KG-8001", manufactured by Negami Chemical Industries, Ltd., containing epoxy groups) 100 parts by mass (solid content), Phenolic resin (product name "MEHC-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 3 parts by weight, Silica filler (product name "SE2050-MCV", manufactured by Admatechs Co., Ltd.) 10 parts by weight The above-mentioned raw materials were each added to a predetermined amount of methyl ethyl ketone and mixed to prepare a bonding composition solution having a total solids concentration of 12 mass %. Next, using the prepared adhesive composition, a die bond sheet having a thickness of 10 μm was produced on a PET release liner in the same manner as above.

[0173] (Examples 1 to 9, Comparative Examples 1 to 5) [Dicing and die-bonding film manufacturing] The configuration of each dicing die bond film is shown in Table 2. A circular die bond sheet and a dicing tape were attached to each other using a laminator at room temperature to produce a dicing die bond film.

[0174] [Table 2]

[0175] <Physical property measurement of dicing die bond film> The physical properties of each layer constituting the dicing die bond film of each Example and Comparative Example were measured as follows.

[0176] [Differential scanning calorimetry (DSC) measurement of substrate layer] The method for differential scanning calorimetry of the base layer of the dicing tape is as described above. The temperature at the apex of the maximum endothermic peak that appeared in the measurement chart is shown in Table 2.

[0177] [Differential scanning calorimetry (DSC) measurement of each layer constituting the base layer] The details of the DSC measurement method for the first substrate layer and the second substrate layer are as described above. The melting points of each layer obtained from the measurement results are shown in Table 2.

[0178] [Tensile storage modulus of the base layer of the dicing tape at 90°C] The details of the method for measuring the tensile storage modulus of the base layer are as described above. The measurement results of each modulus at 90° C. are shown in Table 2.

[0179] [Tensile storage modulus at 90°C of each layer constituting the base layer] The details of the method for measuring the tensile storage modulus of the dicing tape are as described above. The measurement results of each modulus at 90° C. are shown in Table 2.

[0180] [Die bond sheet elongation at break at 0℃] The details of the method for measuring the elastic modulus of the die bond sheet at 0° C. are as described above. Table 2 shows the measurement results.

[0181] Furthermore, the performance of the dicing die bond film produced as described above was evaluated as follows.

[0182] <Performance evaluation (distance between adjacent semiconductor chips at the center (kerf width))> (Preparation of evaluation samples) As an evaluation sample, a dicing die bond film with a chip (die) produced using a bare wafer was prepared. Specifically, a bare wafer held by a wafer processing tape (product name "UB-3083D", manufactured by Nitto Denko Corporation) was bonded to a die bond sheet of a dicing die bond film using a laminator. Then, the wafer processing tape was peeled off from the wafer. The bonding conditions were a bonding speed of 10 mm / sec, a temperature condition of 50 to 80°C, and a pressure condition of 0.15 MPa. (Wafer Preparation) First, a wafer processing tape (product name "UB-3083D", manufactured by Nitto Denko Corporation) was attached to the first surface of a bare wafer (diameter 12 inches, thickness 780 μm, manufactured by Tokyo Kako Co., Ltd.) on which a modified region was to be formed. Next, a stealth dicing device (product name "DAL7360 (SDE05)", power: 0.25 W, frequency: 80 kHz, manufactured by Disco Co., Ltd.) was used to form a modified region inside the bare wafer. In detail, a laser beam with a focal point on the side close to the first surface inside the wafer was irradiated from the back surface (second surface) opposite to the first surface. The irradiation was performed along the planned line for dividing the bare wafer. As a result, a modified region for dividing was formed inside the wafer (50 μm deep from the first surface of the wafer) by ablation due to multiphoton absorption, drawing a lattice of 3 mm x 7 mm sections. Then, the wafer was thinned to a thickness of 30 μm by grinding from the second side of the wafer using a back grinding machine (product name "DGP8760" manufactured by Disco Corporation). In this manner, a wafer held by a wafer processing tape was formed. This wafer included sections for dicing the wafer into multiple chips (3 mm x 7 mm). (Chip (Die) Creation) The bare wafer prepared as described above was attached to a dicing die bond film. The bare wafer attached to the dicing die bond film was broken into small pieces by an expanding process. In addition, the expanding process was carried out using a die separator (product name "Die Separator DDS2300, manufactured by Disco Corporation") with the above-mentioned wafer processing tape peeled off from the bare wafer. In addition, in the expanding process, cool expanding was carried out, followed by room temperature expanding. The cool expansion was carried out as follows. Specifically, a 12-inch diameter SUS ring frame (manufactured by Disco Corporation) was attached at room temperature to the area where the frame was to be attached on the adhesive layer of the dicing die bond film attached to the bare wafer. Then, the bare wafer with the SUS ring frame attached was mounted on a die separator. Then, the wafer and the die bond sheet were cut in a cool expander unit under the conditions of an expansion temperature of -15°C, an expansion speed of 100 mm / sec, and an expansion amount of 10 mm, to obtain chips with a plurality of die bond sheet layers. Furthermore, room temperature expansion was performed under the conditions of a room temperature environment, an expansion speed of 1 mm / sec, and an expansion amount of 10 mm. Then, while maintaining the expanded state, the dicing tape in the portion surrounding the outer edge of the wafer was thermally shrunk by a heater under conditions of a heat temperature of 250°C, a heat distance of 20 mm, and a rotation speed of 3° / sec. That is, by using the heat treatment method shown in Fig. 7, the dicing tape in the portion not overlapping with the group of multiple semiconductor chips was heat-treated, and the heat-treated portion was thermally shrunk. Note that by performing the heat treatment under the above conditions, the temperature of the heated portion of the dicing tape itself can become less than 100°C. After heat shrinkage, the spacing (kerf) between the die bond sheet-attached chips was measured at multiple points using a microscope. The kerf was determined by measuring the spacing at 10 random points in the center and calculating the arithmetic average of the measurements. A kerf (average value) of 20 μm or more was evaluated as "good (○)," a kerf of 10 μm or more but less than 20 μm was evaluated as "fairly good (△)," and a kerf of less than 10 μm was evaluated as "poor (×)."

[0183] <Performance evaluation (die bond sheet breakability)> (Preparation of evaluation samples) As an evaluation sample, a dicing die bond film with a chip (die) made using a bare wafer was prepared. Specifically, a bare wafer held by a wafer processing tape (product name "UB-3083D", manufactured by Nitto Denko Corporation) was bonded to the die bond sheet of the dicing die bond film using a laminator. Then, the wafer processing tape was peeled off from the wafer. The bonding conditions were a bonding speed of 10 mm / sec, a temperature condition of 50 to 80°C, and a pressure condition of 0.15 MPa. (Wafer Preparation) First, a wafer processing tape (product name "UB-3083D", manufactured by Nitto Denko Corporation) was attached to the first surface of a bare wafer (diameter 12 inches, thickness 780 μm, manufactured by Tokyo Kako Co., Ltd.) on which a modified region was to be formed. Next, a stealth dicing device (product name "DAL7360 (SDE05)", power: 0.25 W, frequency: 80 kHz, manufactured by Disco Co., Ltd.) was used to form a modified region inside the bare wafer. In detail, a laser beam with a focal point on the side close to the first surface inside the wafer was irradiated from the back surface (second surface) opposite to the first surface. Irradiation was performed along the planned line for dividing the bare wafer. As a result, a modified region for dividing was formed inside the wafer (depth 50 μm from the first surface of the wafer) by ablation due to multiphoton absorption, drawing a lattice of 3 mm x 7 mm sections. Then, the wafer was thinned to a thickness of 30 μm by grinding from the second side of the wafer using a back grinding machine (product name "DGP8760", manufactured by Disco Corporation). In this manner, a wafer held by a wafer processing tape was formed. This wafer included sections for dicing the wafer into multiple chips (3 mm x 7 mm). (Chip (Die) Creation) The bare wafer prepared as described above was attached to a dicing die bond film. The bare wafer attached to the dicing die bond film was broken into small pieces by an expanding process. The expanding process was carried out using a die separator (product name: Die Separator DDS2300, manufactured by Disco Corporation) in a state in which the above-mentioned wafer processing tape was peeled off from the bare wafer. In the expanding process, cool expanding was carried out, and then room temperature expanding was carried out. The cool expanding was carried out as follows. Specifically, a SUS ring frame (manufactured by Disco Corporation) having a diameter of 12 inches was attached at room temperature to the area where the frame was to be attached on the adhesive layer of the dicing die bond film attached to the bare wafer. Next, the bare wafer to which the SUS ring frame was attached was mounted on the die separator. Then, in the cool expander unit, the expansion temperature was set to 0°C, the expansion speed was set to 100 mm / sec, and the expansion amount was set to 100 mm / sec. The wafer and the die bond sheet were cut under the condition of 12 mm to obtain chips with multiple die bond sheet layers. Furthermore, room temperature expansion was performed under the conditions of a room temperature environment, an expansion speed of 1 mm / sec, and an expansion amount of 10 mm. Then, while maintaining the expanded state, the dicing tape in the portion surrounding the outer edge of the wafer was thermally shrunk by a heater under the conditions of a heat temperature of 250°C, a heat distance of 20 mm, and a rotation speed of 3° / sec. That is, by the heat treatment method shown in FIG. 7, the dicing tape in the portion not overlapping with the group of multiple semiconductor chips was subjected to heat treatment, and the heat-treated portion was thermally shrunk. After the heat shrinkage, light was applied from the back side of the tape, and the whole was observed to see whether the chips and the die bond sheet were cut. A more detailed confirmation was performed using a microscope. (Die bond sheet breakability) Of the total number of chips that should have been broken, the number of chips that had been broken along with the die bond sheet was checked, and the breaking rate was calculated. A breaking rate of 99% or more was evaluated as "good (◯)", a breaking rate of 85% to less than 99% was evaluated as "fairly good (△)", and a breaking rate of less than 85% was evaluated as "poor (×)".

[0184] As can be seen from the above evaluation results, the dicing die bond film of the embodiment can shrink even when heated at a relatively low temperature after being stretched in the expanding process, and can adequately maintain the separation distance (kerf) between adjacent semiconductor chips, compared to the dicing die bond film of the comparative example. Furthermore, the dicing die bond film of the embodiment has both a shrinkage performance that allows sufficient shrinkage at a relatively low temperature and good breaking performance.

[0185] In the dicing die bond film of the embodiment, the dicing tape has a first base layer containing an ethylene-acrylic acid copolymer resin and a second base layer containing an ethylene-vinyl acetate copolymer resin, and the second base layer is disposed between the first base layer and the adhesive layer of the dicing tape. Therefore, the dicing tape can be sufficiently shrunk even by a relatively low-temperature heat treatment after the expanding process, so that the force of the dicing tape shrinking can be sufficiently suppressed. Therefore, it is considered that the dicing tape of the embodiment can be shrunk even by heating at a relatively low temperature after being stretched in the expanding process, and the separation distance (kerf) between adjacent chips can be sufficiently maintained. [Industrial Applicability]

[0186] The dicing die bond film of the present invention is suitably used, for example, as an auxiliary tool when manufacturing a semiconductor device (semiconductor integrated circuit). [Explanation of symbols]

[0187] 1: Dicing die bond film, 10: Die bond sheet, 20: dicing tape, 21: Base material layer, 22: Adhesive layer.

Claims

1. A substrate layer and a pressure-sensitive adhesive layer overlaid on one side of the substrate layer, the base layer has a plurality of laminated layers, and the plurality of layers include at least a first base layer containing an ethylene-acrylic acid copolymer resin and a second base layer containing a resin other than the ethylene-acrylic acid copolymer resin; A dicing tape, wherein the second base layer is disposed between the first base layer and the pressure-sensitive adhesive layer.

2. The dicing tape according to claim 1 , wherein the second base layer contains at least an ethylene-vinyl acetate copolymer resin.

3. The substrate layer further includes a third substrate layer containing an ethylene-acrylic acid copolymer resin, The dicing tape according to claim 1 , wherein the second base material layer is disposed between the first base material layer and the third base material layer.

4. The dicing tape according to claim 1 , wherein the first base material layer has a tensile storage modulus at 90° C. that is greater than the tensile storage modulus of the second base material layer.

5. The dicing tape according to claim 3 , wherein the first base material layer and the third base material layer each have a tensile storage modulus at 90° C. greater than the tensile storage modulus of the second base material layer.

6. 3. The dicing tape according to claim 1, wherein an absolute value of a difference between a melting point of the first base material layer and a melting point of the second base material layer is 10°C or less.

7. 4. The dicing tape according to claim 3, wherein a maximum absolute value of a difference between a melting point of the first base material layer or the third base material layer and a melting point of the second base material layer is 10°C or less.

8. 3. The dicing tape according to claim 1, wherein a chart obtained by measuring the base layer by differential scanning calorimetry does not have an endothermic peak having an apex at a temperature of 100°C or higher.

9. 3. The dicing tape according to claim 1, wherein the base layer has a tensile storage modulus at 90°C of 1.0 MPa or more.

10. 3. The dicing tape according to claim 1, which is used for manufacturing a semiconductor device.

11. A dicing die bond film comprising the dicing tape according to claim 1 or 2 and a die bond sheet overlapping the dicing tape.

12. A method for manufacturing a semiconductor device, comprising: manufacturing a semiconductor device having a semiconductor chip by using a dicing die bond film comprising the dicing tape according to claim 1 or 2 and a die bond sheet overlapping the dicing tape, a mounting step of fixing the semiconductor wafer to the dicing tape via the die bond sheet by disposing the die bond sheet between the adhesive layer of the dicing tape and the semiconductor wafer; an expanding step of splitting the semiconductor wafer together with the die bond sheet by stretching the dicing tape to obtain a group of semiconductor chips by dividing the semiconductor wafer into small pieces; a part of the stretched dicing tape is heated around the group of semiconductor chips to cause it to shrink;

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