Micro-led and micro-led display panel

Abstract

To provide a micro-LED.SOLUTION: A micro-LED 200 includes: two or more light-emitting mesas 231, 232, 233 which are disposed in a vertical direction from top to bottom; and at least one distributed Bragg reflection (DBR) layer 241 formed between adjacent light-emitting mesas, and configured to reflect light emitted by one of the adjacent light-emitting mesas disposed above the DBR layer and to pass light emitted by one or more light-emitting mesas disposed below the DBR layer.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates generally to micro-LED manufacturing techniques, and more particularly to micro-LEDs and micro-LED display panels. [Background technology]

[0002] Inorganic micropixel light-emitting diodes, also known as micro light-emitting diodes, micro LEDs, or μ-LEDs, are becoming more important as they are used in a variety of applications including self-emitting microdisplays, visible light communication, and optogenetics. Micro LEDs have better strain relaxation, improved light extraction efficiency, and uniform current spreading, resulting in higher output performance than conventional LEDs. Compared with conventional LEDs, micro LEDs also exhibit several advantages, such as improved thermal efficiency, faster response speed, larger operating temperature range, higher resolution, wider color gamut, higher contrast, lower power consumption, and operability at higher current densities.

[0003] The micro LED can include multiple light emitting mesas, and each light emitting mesa can be electrically connected to a respective electrode, so that each light emitting mesa can be controlled. Since the multiple light emitting mesas are arranged in a vertical direction, light loss may occur in the micro LED, resulting in a decrease in light emitting efficiency. Summary of the Invention

[0004] An embodiment of the present disclosure provides a micro-LED that includes two or more light emitting mesas arranged vertically from top to bottom, and at least one distributed Bragg reflector (DBR) layer formed between adjacent light emitting mesas and configured to reflect light emitted by one of the adjacent light emitting mesas arranged above the DBR layer and transmit light emitted by one or more light emitting mesas arranged below the DBR layer.

[0005] An embodiment of the present disclosure also provides a micro LED display panel, the micro LED display panel including: an integrated circuit (IC) backplane with a bottom pad array, the bottom pad array including a group of a plurality of bottom pads; and a micro LED array formed on the IC backplane, the micro LED array including a plurality of the above-mentioned micro LEDs, wherein one micro LED of the plurality of micro LEDs is electrically connected to one group of the plurality of bottom pads.

[0006] Embodiments and various aspects of the present disclosure are illustrated in the following detailed description and the accompanying drawings, in which various features are not drawn to scale. [Brief description of the drawings]

[0007] [Figure 1] FIG. 2 is a structural diagram illustrating an exemplary dielectric distributed Bragg reflector (DBR) layer, according to some embodiments of the present disclosure. [Diagram 2] FIG. 1 is a structural diagram illustrating an example micro LED according to some embodiments of the present disclosure. [Diagram 3] 3 is a table illustrating exemplary parameters of the first and second DBR layers shown in FIG. 2 according to some embodiments of the present disclosure. [Figure 4] 4 is a graph illustrating the relationship between light reflectance and wavelength for the first and second DBR layers shown in FIG. 3, according to some embodiments of the present disclosure. [Diagram 5] FIG. 2 is a structural diagram illustrating a top view of a micro-LED display panel according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, in which the same numbers represent the same or similar elements in different drawings, unless otherwise indicated. The implementations described in the following description of the exemplary embodiments do not represent all implementations consistent with the present invention. Instead, they are merely examples of apparatus and methods consistent with aspects related to the present invention as set forth in the appended claims. Certain aspects of the present disclosure are described in more detail below. The terms and definitions provided herein control in the event of a conflict with terms and / or definitions incorporated by reference.

[0009] The embodiments of the present disclosure provide a micro-LED with improved light-emitting efficiency. The micro-LED includes at least two vertically oriented light-emitting mesas and at least one dielectric distributed Bragg reflector (DBR) layer between adjacent light-emitting mesas. Each DBR layer includes a first layer and a second layer that are alternately stacked. The DBR layer is configured to reflect light emitted by the light-emitting mesa above the DBR layer and transmit light emitted by the light-emitting mesa below the DBR layer, thereby improving the light-emitting efficiency of the micro-LED, and each light-emitting mesa can have the same size.

[0010] FIG. 1 shows a structural diagram illustrating an example DBR layer 100, according to some embodiments of the present disclosure. As shown in FIG. 1, the DBR layer 100 includes a first layer 110 and a second layer 120 that are alternately stacked. The refractive index of the first layer 110 is denoted as n1, and the thickness of the first layer 110 is denoted as d1. The refractive index of the second layer 120 is denoted as n2, and the thickness of the second layer 120 is denoted as d2. The wavelength reflected by the DBR layer 100 is denoted as λ. b Let wavelength λ b can be selected depending on the wavelength range reflected by the DBR layer 100. Different materials may have different refractive indices. In some embodiments, the thickness d1 of the first layer 110 is The image can be obtained by using the file TIFF2025023892000002.tif13170. The thickness d2 of the second layer 120 is The image can be obtained by using the file TIFF2025023892000003.tif13170. The stop band B of the DBR layer 100 is The image can be obtained by using the file TIFF2025023892000004.tif14170.

[0011] In this disclosure, the stop band B of the DBR layer 100 represents a range of wavelengths, within which light cannot be transmitted through the DBR layer 100 and is totally reflected by the DBR layer 100. After the materials for the first layer and the second layer are selected, the corresponding refractive indices n1 and n2 are determined accordingly. In order to obtain better reflection efficiency, the wavelength λ b By adjusting the wavelength λ, an appropriate stop band B can be obtained. b The value of may be adjusted according to the range of wavelengths of light to be reflected, for example, the wavelengths of light emitted by the light-emitting mesa above the DBR layer. The stop band B can be set as 100 nm, or in some embodiments, the stop band B can be less than 100 nm, for example, 80 nm, which can be determined according to specific practice. Then, the thickness d1 and the thickness d2 can be determined according to formula (1) and formula (2), respectively.

[0012] In some embodiments, the total number of first layers 110 and second layers 120 is N, where N is a positive integer greater than 1. The total thickness of the DBR layer 100 is the sum of the thicknesses of the N first layers 110 and second layers 120. In some embodiments, when N is an even number, the number of first layers 110 and the number of second layers 120 are the same, i.e., N / 2. When N is an odd number, the number of first layers 110 is greater than the number of second layers 120, i.e., the number of first layers 110 is (N+1) / 2 and the number of second layers 120 is (N-1) / 2.

[0013] wavelength λ bThe total reflection efficiency of the DBR layer 100 for light having N increases as N increases. In order to balance the size and reflection efficiency of the micro-LED, the total thickness of the DBR layer 100 is preferably 2 μm or less.

[0014] In some embodiments, the material of the first layer 110 and the material of the second layer 120 are different materials having different refractive indices. For example, the material of the first layer 110 is SiO2 and the material of the second layer 120 is Si3N4.

[0015] In some embodiments, amorphous silicon (a-Si) is used for the DBR layer 100. For example, one of the material of the first layer 110 and the material of the second layer 120 is a-Si. In some embodiments, the material of the first layer 110 is SiO2, and the material of the second layer 120 is a-Si. When the material of one of the first layer 110 and the second layer 120 is an a-Si material, the total thickness of the DBR layer 100 can be thinner, for example, less than 500 nm. Since SiO2 can have a better bonding effect with other layers, in this case, the number N of the first layer 110 and the second layer 120 is an odd number. Therefore, the first layer 110, which is SiO2, is bonded with other layers of the micro-LED.

[0016] FIG. 2 shows a structural diagram illustrating an example micro-LED 200 according to some embodiments of the present disclosure. As shown in FIG. 2, in this example, the micro-LED 200 includes three light-emitting mesas 231, 232, and 233 disposed on an IC backplane 210 from bottom to top. A first DBR layer 241 is disposed between the first light-emitting mesa 231 and the second light-emitting mesa 232. A second DBR layer 242 is disposed between the second light-emitting mesa 232 and the third light-emitting mesa 233. In this example, the first light-emitting mesa 231 emits red light 262, the second light-emitting mesa 232 emits green light 264, and the third light-emitting mesa 233 emits blue light 266. Thus, the first DBR layer 241 is configured to reflect the green light 264 emitted by the second light-emitting mesa 232 and the blue light 266 emitted by the third light-emitting mesa 233, and transmit the red light 262 emitted by the first light-emitting mesa 231. The second DBR layer 242 is configured to reflect the blue light 266 emitted by the third light-emitting mesa 233, and transmit the red light 262 and green light 264 emitted by the first light-emitting mesa 231 or the second light-emitting mesa 232, respectively. This structure reduces the light loss of the blue light 266 and the green light 262, thereby improving the light-emitting efficiency of the micro-LED 200. The structures of the first DBR layer 241 and the second DBR layer 242 are described above with reference to FIG. 1 and will be described in further detail below.

[0017] 3 is a table illustrating exemplary parameters of first DBR layer 241 and second DBR layer 242 according to some embodiments of the present disclosure. As shown in FIG. 3, in this example, based on the materials of the first and second layers of first DBR layer 241, the refractive index n1 of the first layer of first DBR layer 241 is 1.45, and the refractive index n2 of the second layer of first DBR layer 241 is 2.0. Since first DBR layer 241 is configured to reflect green light 264 emitted by second light-emitting mesa 232 (e.g., the corresponding wavelength is about 510 nm to 540 nm) and blue light 266 emitted by third light-emitting mesa 233 (e.g., the corresponding wavelength is about 440 nm to 470 nm), the wavelength λ for first DBR layer 241 is 1.45.b In order to set the stop band B of the first DBR layer 241 to 100 nm, the wavelength λ b is determined to be 480 nm. Then, the thickness d1 of the first layer of the first DBR layer 241 and the thickness d2 of the second layer of the first DBR layer 241 can be obtained as 83 nm and 60 nm, respectively, according to formula (1) and formula (2).

[0018] Similarly, based on the materials of the first and second layers of second DBR layer 242, the refractive index n1 of the first layer of second DBR layer 242 is 1.45, and the refractive index n2 of the second layer of second DBR layer 242 is 2.1. Because second DBR layer 242 is configured to reflect blue light 266 emitted by third light-emitting mesa 243 (e.g., the corresponding wavelength is about 440 nm to 470 nm), the wavelength λ b is selected to be less than 440 nm. In order to make the stopband B of the second DBR layer 242 100 nm, the wavelength λ b can be determined to be 410 nm. Then, the thickness d1 of the first layer of the second DBR layer 242 and the thickness d2 of the second layer of the second DBR layer 242 can be obtained as 71 nm and 49 nm, respectively, according to equations (1) and (2).

[0019] FIG. 4 is a graph showing the relationship between the reflectance and wavelength of light for the first DBR layer 241 and the second DBR layer 242 according to some embodiments of the present disclosure. In this example, N is equal to 15, which is the total number of layers of the first DBR layer 241 and the second DBR layer 242. As shown in FIG. 4, the X-axis represents the wavelength of light, and the Y-axis represents the reflectance corresponding to the wavelength. Curves A and B respectively represent the relationship between the reflectance and wavelength of the first DBR layer 241 and the second DBR layer 242. If the reflectance is 100%, the light of the corresponding wavelength can be totally reflected by the corresponding DBR layer, and if the reflectance is 0, the light of the corresponding wavelength can be totally transmitted through the corresponding DBR layer. Referring to FIG. 4, the stop band of the first DBR layer 241 (e.g., the wavelength range corresponding to the reflectance is about 100%) is 100 nm in the wavelength range of 430 nm to 530 nm. The reflectance for wavelengths over 600 nm corresponding to red light is relatively low, for example, less than 30%. That is, the first DBR layer 241 can reflect most of the green and blue light and transmit red light. Similarly, the stop band of the second DBR layer 242 is 100 nm in the wavelength range of 360 nm to 460 nm. The reflectance for wavelengths over 500 nm corresponding to green and red light is relatively low, for example, less than 35%. That is, the second DBR layer 242 can reflect most of the blue light and transmit red and green light.

[0020] 3 and 4, in this example, when N is equal to 15, the total thickness of first DBR layer 241 is 1084 nm, and the total thickness of second DBR layer 242 is 911 nm.

[0021] First DBR layer 241 and second DBR layer 242 can improve the light emitting efficiency of light emitting mesas 231, 232, and 233, so that the same mesa size can be achieved for each light emitting mesa.

[0022] As can be understood, in some embodiments, the first light-emitting mesa can emit red light, the second light-emitting mesa can emit blue light, and the third light-emitting mesa can emit green light. Thus, the first DBR layer is configured to reflect the blue light emitted by the second light-emitting mesa and the green light emitted by the third light-emitting mesa, and transmit the red light emitted by the first light-emitting mesa. The second DBR layer is configured to reflect the green light emitted by the third light-emitting mesa, and transmit the red and blue light emitted by the first or second light-emitting mesa, respectively. Thus, the parameters of each of the first and second DBR layers can be obtained according to Equation (1) and Equation (2) based on the corresponding reflected wavelengths.

[0023] Referring back to FIG. 2, in some embodiments, the first light emitting mesa 231 includes a first mesa structure 2311, a first passivation layer 2312 formed on a sidewall of the first mesa structure 2311, and a first upper transparent layer 2313 formed on a surface of the first passivation layer 2312 and covering an upper surface of the first mesa structure 2311. The first mesa structure 2311 is configured to emit light. For example, the first mesa structure 2311 may further include a first semiconductor layer, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer provided on the light emitting layer. The first upper transparent layer 2313 is electrically connected to the upper surface of the first mesa structure 2311. In some embodiments, the first light emitting mesa 231 further includes a first bottom transparent layer 2314 provided on a bottom of the first mesa structure 2311 and configured to bond to the IC backplane 210 by a bonding layer 220. In some embodiments, a first passivation layer 2312 is further formed on sidewalls of the bonding layer 220 and the first bottom transparent layer 2314.

[0024] In some embodiments, IC backplane 210 may include a group of three bottom pads for electrically connecting with each light emitting mesa, respectively. For example, first bottom pad 211 is electrically connected to bonding layer 220 and further connected with first light emitting mesa 231. In some embodiments, a conductive structure (not shown) is further provided for selectively connecting the bottom of second light emitting mesa 232 and the bottom of third light emitting mesa 233 to a second bottom pad (not shown) and a third bottom pad (not shown) of IC backplane 210, respectively.

[0025] In some embodiments, the second light emitting mesa 232 includes a second mesa structure 2321, a second passivation layer 2322 formed on a sidewall of the second mesa structure 2321, and a second upper transparent layer 2323 formed on a surface of the second passivation layer 2322 and covering an upper surface of the second mesa structure 2321. The second mesa structure 2321 is configured to emit light. For example, the second mesa structure 2321 may further include a first semiconductor layer, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer provided on the light emitting layer. The second upper transparent layer 2323 is electrically connected to the upper surface of the second mesa structure 2321. In some embodiments, the second light emitting mesa 232 further includes a second bottom transparent layer 2324 provided on the bottom of the second mesa structure 2321 and configured to further electrically connect the bottom of the second mesa structure 2321 to a second bottom pad through the conductive structure.

[0026] In some embodiments, the third light emitting mesa 233 includes a third mesa structure 2331, a third passivation layer 2332 formed on a sidewall of the third mesa structure 2321, and a third upper transparent layer 2333 formed on a surface of the third passivation layer 2332 and covering an upper surface of the third mesa structure 2331. The third mesa structure 2331 is configured to emit light. For example, the third mesa structure 2331 may further include a first semiconductor layer, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer provided on the light emitting layer. The third upper transparent layer 2333 is electrically connected to the upper surface of the third mesa structure 2331. In some embodiments, the third light emitting mesa 233 further includes a third bottom transparent layer 2334 provided on the bottom of the third mesa structure 2331 and configured to further electrically connect the bottom of the third mesa structure 2331 to a third bottom pad through the conductive structure.

[0027] In some embodiments, each of the first top transparent layer 2313, the first bottom transparent layer 2314, the second top transparent layer 2323, the second bottom transparent layer 2324, the third top transparent layer 2333, and the third bottom transparent layer 2334 is a TCO (transparent conductive oxide) thin film, such as an ITO (indium tin oxide) film, an AZO (antimony doped zinc oxide) film, an ATO (antimony doped tin oxide) film, an FTO (fluorine doped tin oxide) film, etc.

[0028] In some embodiments, the micro-LED 200 further includes an upper conductive layer 250 formed on the third light emitting mesa 233. In some embodiments, the upper conductive layer 250 is a TCO (transparent conductive oxide) thin film, such as an ITO (indium tin oxide) film, an AZO (antimony doped zinc oxide) film, an ATO (antimony doped tin oxide) film, an FTO (fluorine doped tin oxide) film, etc.

[0029] FIG. 5 shows a structural diagram illustrating a top view of a micro LED display panel 500 according to some embodiments of the present disclosure. Referring to FIG. 5, the micro LED display panel 500 includes a micro LED array 510 and an IC (integrated circuit) backplane 520. The micro LED array 510 is located on the IC backplane 520 to form an image display area of ​​the micro LED display panel 500. The remaining area on the IC backplane 520 that is not covered by the micro LED array 510 is formed as a non-functional area. The IC backplane 520 is formed on the back side of the micro LED array 510 and has a portion that extends outside the micro LED array 510, i.e., is not covered. The micro LED array 510 includes a plurality of micro LEDs 511 arranged in an array. The IC backplane 520 is configured to control the plurality of micro LEDs 511. The IC backplane 520 can include a bottom pad array (not shown) corresponding to the micro LED array 510. The bottom pad array includes a plurality of bottom pad groups (e.g., a group of three bottom pads including bottom pad 211 in FIG. 2), with one bottom pad group corresponding to one micro LED 511. One micro LED of the plurality of micro LEDs is electrically connected to one bottom pad group of the plurality of bottom pad groups.

[0030] In some embodiments, the top conductive layer of the micro LEDs (e.g., the top conductive layer 250 in FIG. 2) is interconnected with each of the multiple micro LEDs, i.e., the top conductive layer is continuously formed on the top of the micro LED array 510 and connected with all the micro LEDs 511.

[0031] In some embodiments, the IC backplane 520 further includes top connection pads 521. The top conductive layer is connected to the top connection pads 521 and can be further connected to an external circuit.

[0032] Each micro LED (e.g., micro LED 200) herein has a very small volume. The micro LED can be applied to a micro LED display panel. The light emitting area of ​​the micro LED display panel, e.g., micro LED display panel 500, is very small, such as 1 mm×1 mm, 3 mm×5 mm, etc. In some embodiments, the light emitting area is the area of ​​the micro LED array in the micro LED display panel. The micro LED display panel includes one or more micro LEDs forming a pixel array, where the micro LEDs are pixels, such as a 1600×1200, 680×480, or 1920×1080 pixel array. The diameter of each micro LED is in the range of about 200 nm to 2 μm. An IC backplane, e.g., IC backplane 520, is formed on the back of the micro LED array 510 and is electrically connected with the micro LED array 510. The IC backplane 520 receives signals, such as image data, from the outside through signal lines and controls the emission of light from the corresponding micro LED 511.

[0033] It will be understood by those skilled in the art that the micro LED display panel is not limited by the above-described structures and may include more or less components than those illustrated, or some components may be combined, or different components may be utilized.

[0034] It should be noted that relational terms such as "first" and "second" are used herein only to distinguish one entity or operation from another and do not require or imply an actual relationship or order between those entities or operations. Additionally, the words "comprising," "having," "containing," and "including," as well as other similar forms, are intended to be equivalent in meaning and open-ended in that the item or items following any one of these words are not intended to be an exhaustive enumeration of such item or items, and are not intended to be limited to only the item or items listed.

[0035] As used herein, unless otherwise stated, the term "or" encompasses all possible combinations unless impracticable. For example, if it is stated that a database can include A or B, the database can include A, or B, or A and B, unless otherwise stated or impracticable. As a second example, if it is stated that a database can include A, B, or C, the database can include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C, unless otherwise stated or impracticable.

[0036] In the foregoing specification, the embodiments have been described with reference to numerous specific details that may vary from implementation to implementation. Certain adaptations and modifications of the described embodiments are possible. Other embodiments may be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims. It is also intended that the sequence of steps depicted in the figures is for illustrative purposes only, and is not intended to be limited to the particular sequence of steps. Thus, one skilled in the art can appreciate that these steps may be performed in different orders while performing the same method.

[0037] In the drawings and specification, illustrative embodiments have been disclosed. However, many variations and modifications to these embodiments may be made. Thus, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. two or more light emitting mesas arranged vertically from top to bottom; at least one distributed Bragg reflector (DBR) layer formed between adjacent light emitting mesas and configured to reflect light emitted by one of the adjacent light emitting mesas disposed above the DBR layer and transmit light emitted by one or more light emitting mesas disposed below the DBR layer; A micro LED comprising:

2. 2. The micro LED of claim 1, wherein the DBR layer comprises a plurality of first layers and a plurality of second layers, the plurality of first layers and the plurality of second layers being alternately stacked, and a first refractive index of the plurality of first layers and a second refractive index of the plurality of second layers being different.

3. a first thickness of one of the plurality of first layers is determined based on the first refractive index and a wavelength; a second thickness of one of the plurality of second layers is determined based on the second refractive index and the wavelength, the wavelength being within a wavelength range reflected by the DBR layer; 3. The micro LED of claim 2.

4. The first thickness is: is obtained by The second thickness is: is obtained by d １ represents the first thickness, n １ represents the first refractive index, and d ２ represents the second thickness, n ２ represents the second refractive index, λ ｂ represents the wavelength, 4. The micro LED of claim 3.

5. The wavelength is 5. The micro-LED of claim 4, wherein the DBR layer is tunable to obtain a stopband B according to the relationship:

6. 6. The micro LED of claim 5, wherein the stop band is 100 nm.

7. The micro-LED according to any one of claims 2 to 6, wherein one of the first material of the first layer and the second material of the second layer is amorphous silicon (a-Si).

8. The first material of the first layer is SiO ２ 8. The micro LED of claim 7, wherein the second material of the second layer is a-Si.

9. The first material and the second material are each SiO ２ and Si ３ N ４ The microLED according to any one of claims 2 to 6, wherein

10. The two or more light emitting mesas include a first light emitting mesa configured to emit red light; a second light emitting mesa configured to emit green light and disposed above the first light emitting mesa; a third light-emitting mesa configured to emit blue light and disposed above the second light-emitting mesa; Equipped with The at least one DBR layer is a first DBR layer disposed between the first light emitting mesa and the second light emitting mesa and configured to transmit the red light and reflect the green light and the blue light; a second DBR layer disposed between the second light emitting mesa and the third light emitting mesa and configured to reflect the blue light and transmit the red light and the green light; Equipped with A micro LED according to any one of the preceding claims.

11. The two or more light emitting mesas include a first light emitting mesa configured to emit red light; a second light emitting mesa configured to emit blue light and disposed above the first light emitting mesa; a third light-emitting mesa configured to emit green light and disposed above the second light-emitting mesa; Equipped with The at least one DBR layer is a first DBR layer disposed between the first light emitting mesa and the second light emitting mesa and configured to transmit the red light and reflect the blue light and the green light; a second DBR layer disposed between the second light emitting mesa and the third light emitting mesa and configured to reflect the green light and transmit the red light and the blue light; Equipped with A micro LED according to any one of the preceding claims.

12. Each of the two or more light emitting mesas comprises: a mesa structure configured to emit light; a passivation layer formed on a sidewall of the mesa structure; an upper transparent layer formed on a surface of the passivation layer and covering an upper surface of the mesa structure, the upper transparent layer being electrically connected to the upper surface of the mesa structure; a bottom transparent layer formed on a bottom of the mesa structure and electrically connected to the bottom of the mesa structure; 2. The micro-LED of claim 1 , comprising:

13. An integrated circuit (IC) backplane comprising a bottom pad array, the bottom pad array comprising a group of a plurality of bottom pads; A micro LED array formed on the IC backplane, the micro LED array comprising a plurality of micro LEDs according to any one of claims 1 to 12. Equipped with a micro LED of the plurality of micro LEDs is electrically connected to a group of bottom pads of the plurality of groups of bottom pads; Micro LED display panel.

14. 14. The micro LED display panel of claim 13, wherein the micro LED further comprises a top conductive layer formed on top of the micro LED, and the top conductive layers of each of the plurality of micro LEDs are interconnected.

15. 15. The micro LED display panel of claim 14, wherein the IC backplane further comprises a top connection pad, and the top conductive layer is connected with the top connection pad of the IC backplane.

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