Photodetector and electronic apparatus

Abstract

To suppress reduction of photodetection performance.SOLUTION: A photodetector comprises: a photoelectric conversion layer; an upper electrode layer which is provided above the photoelectric conversion layer; a lower electrode layer which includes a plurality of electrodes and is provided below the photoelectric conversion layer; and a shading part which is provided higher than at least a portion of the photoelectric conversion layer. In a planar view, the shading part includes an extension portion which extends, between a specific electrode and an electrode adjacent thereto in the plurality of electrodes of the lower electrode layer, in a direction across the direction in which the electrodes are opposed to each other.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to light detection devices and electronic devices. [Background technology]

[0002] For example, Patent Document 1 discloses a photodetector having a photoelectric conversion unit disposed on a semiconductor substrate. The photoelectric conversion unit includes a photoelectric conversion layer and a plurality of electrodes, such as an electrode for reading out charges generated in the photoelectric conversion layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-157816 A Summary of the Invention [Problem to be solved by the invention]

[0004] The charges generated in the photoelectric conversion layer do not necessarily move to the intended electrode. Unintended charge movement can, for example, cause noise and can degrade the light detection performance by causing variations in light detection sensitivity.

[0005] One aspect of the present disclosure is to suppress degradation of light detection performance. [Means for solving the problem]

[0006] A photodetection device according to one aspect of the present disclosure comprises a photoelectric conversion layer, an upper electrode layer provided above the photoelectric conversion layer, a lower electrode layer including a plurality of electrodes and provided below the photoelectric conversion layer, and a light-shielding portion provided above at least a portion of the photoelectric conversion layer, and when viewed in a plane, the light-shielding portion includes an extension portion that extends between a specific electrode among the multiple electrodes of the lower electrode layer and its adjacent electrode in a direction intersecting the direction in which the electrodes face each other.

[0007] An electronic device according to one aspect of the present disclosure is an electronic device equipped with a photodetection device, the photodetection device including a photoelectric conversion layer, an upper electrode layer provided above the photoelectric conversion layer, a lower electrode layer including a plurality of electrodes and provided below the photoelectric conversion layer, and a light-shielding portion provided above at least a portion of the photoelectric conversion layer, and when viewed in a plane, the light-shielding portion includes an extension portion that extends between a specific electrode among the multiple electrodes of the lower electrode layer and its adjacent electrode in a direction intersecting the direction in which the electrodes face each other. [Brief description of the drawings]

[0008] [Figure 1] 1 is a diagram illustrating an example of a schematic configuration of a photodetector 10 according to an embodiment. [Diagram 2] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Diagram 3] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Figure 4] 1A and 1B are diagrams illustrating an example of a light shielding portion 3 having a multi-layer structure. [Diagram 5] 2 is a diagram illustrating an example of an equivalent circuit of a pixel 12. FIG. [Figure 6] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 7] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 8] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 9] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 10] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 11] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 12] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 13] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 14] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 15] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 16] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 17] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 18] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 19] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 20] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Figure 21] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 22] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 23] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 24] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Diagram 25] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 26] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 27] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 28] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Figure 29] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Diagram 30] 13 is a diagram showing a modified example of the light shielding portion 3. FIG. [Diagram 31] 13 is a diagram showing a modified example of the light detection region 11. FIG. [Diagram 32] 13 is a diagram showing a modified example of the light detection region 11. FIG. [Diagram 33] FIG. 13 is a diagram showing a modified example of a pixel layout. [Diagram 34] 13 is a diagram showing a modified example of the electrode layer 8. FIG. [Diagram 35] 1 is a diagram showing an example of a planar layout of an electrode layer 8 including a charge transfer electrode 84. FIG. [Diagram 36] 1 is a diagram showing an example of a planar layout of an electrode layer 8 including a charge transfer electrode 84. FIG. [Figure 37] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Figure 38] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Figure 39] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Diagram 40] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Diagram 41] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Diagram 42] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Diagram 43] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Diagram 44] 2A to 2C are diagrams illustrating an example of a method for manufacturing the photodetector 10. [Diagram 45] 2 is a diagram showing an example of an equivalent circuit of a pixel 12 including a metal light-shielding portion 3. FIG. [Diagram 46] 2 is a diagram showing an example of a schematic configuration of a light detection region 11. FIG. [Figure 47] 1 is a diagram illustrating an example of a schematic configuration of an electronic device 100. [Figure 48] 2 is a diagram showing a schematic example of a cross-sectional configuration of an image sensor A1A. [Figure 49] 49 is a diagram illustrating an example of a planar configuration of the image sensor A1A shown in FIG. 48. FIG. [Figure 50] FIG. 49 is an equivalent circuit diagram of the image sensor A1A shown in FIG. 48. [Figure 51] 49 is a diagram showing a schematic arrangement of a lower electrode A11 and transistors constituting a control section of the image sensor 1A shown in FIG. 48. FIG. [Figure 52] 2A to 2C are diagrams showing a manufacturing method of the image sensor A1A in order of steps. [Figure 53] 2A to 2C are diagrams showing a manufacturing method of the image sensor A1A in order of steps. [Figure 54] 2A to 2C are diagrams showing a manufacturing method of the image sensor A1A in order of steps. [Figure 55] 2A to 2C are diagrams showing a manufacturing method of the image sensor A1A in order of steps. [Figure 56] 2A to 2C are diagrams showing a manufacturing method of the image sensor A1A in order of steps. [Figure 57] 2A to 2C are diagrams showing a manufacturing method of the image sensor A1A in order of steps. [Figure 58] 1A to 1C are diagrams illustrating an example of the operation of the image sensor A1A. [Figure 59] 13 is a diagram illustrating a schematic cross-sectional configuration of an image sensor A1B according to Modification 1. FIG. [Figure 60] 13 is a diagram illustrating a schematic cross-sectional configuration of an image sensor A1C according to Modification Example 2. FIG. [Figure 61] FIG. 13 is a diagram illustrating an image sensor A1D according to Modification 3. [Figure 62] FIG. 13 is a diagram illustrating an image sensor A1E according to a fourth modified example. [Figure 63] 13 is a diagram showing another example of the cross-sectional configuration of the image sensor A1C according to Modification Example 2, represented as an image sensor A1F. FIG. [Figure 64] FIG. 13 is a diagram showing a schematic representation of another example of the image sensor A1D according to Modification Example 3 as an image sensor A1G. [Figure 65] FIG. 13 is a diagram illustrating another example of the image sensor A1E according to Modification Example 4, which is diagrammatically represented as an image sensor A1H. [Figure 66] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 67] 4 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit; FIG. [Figure 68] 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. [Figure 69] 2 is a block diagram showing an example of a functional configuration of a camera head and a CCU. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same elements are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0010] The present disclosure will be described in the following order. 1. First embodiment 2. Modifications of the light-shielding part 3.Examples of manufacturing methods 4. Further Modifications of the Light-Shielding Part 5. Modification of the light detection area 6. Pixel layout variations 7.Modification of electrode layer 8. Second embodiment 9. Third embodiment 10. Fourth embodiment 11. Fifth embodiment 12. Application to electronic devices 13.Komusubi 14. Other configuration examples of photodetection device 15. Mobile application examples 16. Application example to endoscopic surgery system

[0011] 1. First embodiment 1 is a diagram showing an example of a schematic configuration of a photodetector 10 according to an embodiment. The illustrated photodetector 10 is a solid-state imaging device, and each element is provided in and on a semiconductor substrate such as a silicon substrate. The photodetector 10 may be a chip-like device. The photodetector 10 includes a photodetection region 11, a control circuit 13, a vertical drive circuit 14, a column signal processing circuit 15, a horizontal drive circuit 16, an output circuit 17, a signal line 18, and a signal line 19.

[0012] The photodetection region 11 is a pixel region including a plurality of pixels 12, and may also be called a pixel array section or the like. The plurality of pixels 12 are arranged in a two-dimensional array. FIG. 1 also shows an XYZ coordinate system for the photodetection region 11. The X-axis direction corresponds to the row direction of the array, for example, the lateral direction (horizontal direction) of the photodetection device 10. The Y-axis direction corresponds to the column direction of the array, for example, the longitudinal direction (vertical direction) of the photodetection device 10. The Z-axis direction corresponds to the front-rear direction of the photodetection device 10, for example. The photodetection device 10 detects light incident on the photodetection region 11, more specifically, light that mainly travels from the front to the rear (light traveling along the negative direction of the Z-axis). The positive Z-axis direction may also be called the upward direction. The negative Z-axis direction may also be called the downward direction.

[0013] The pixel 12 includes a photoelectric conversion unit (described later) and its peripheral circuit elements. The pixel 12 can also be called a pixel circuit. An example of an equivalent circuit will be described later with reference to FIG.

[0014] The control circuit 13 , the vertical drive circuit 14 , the column signal processing circuit 15 , the horizontal drive circuit 16 and the output circuit 17 constitute the peripheral circuits of the light detection region 11 .

[0015] The control circuit 13 receives data instructing an input clock, an operation mode, etc., and outputs data such as internal information of the photodetector 10. The control circuit 13 generates clock signals and control signals that serve as references for the operations of the vertical drive circuit 14, the column signal processing circuit 15, the horizontal drive circuit 16, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. The control circuit 13 inputs (supplies) these generated signals to the vertical drive circuit 14, the column signal processing circuit 15, the horizontal drive circuit 16, etc.

[0016] The vertical drive circuit 14 includes, for example, a shift register. The vertical drive circuit 14 is connected to the photodetection region 11 via a plurality of signal lines 18H (horizontal signal lines) extending in the row direction (X-axis direction) of the pixels 12. Each signal line 18H extends, for example, for each pixel row, and each signal line 18H may include a plurality of signal lines. The vertical drive circuit 14 supplies a drive signal (for example, a pulse signal) for driving the pixels 12 to a selected signal line 18H.

[0017] Driving the pixels 12 by the vertical drive circuit 14 includes driving a pixel transistor in the pixel, which will be described later. The pixel transistor is driven to output a voltage signal (pixel signal) according to the amount of charge generated in a photoelectric conversion unit in the pixel 12 to a corresponding signal line 18V among a plurality of signal lines 18V (vertical signal lines) extending in the column direction (Y-axis direction) of the pixels 12.

[0018] The column signal processing circuit 15 is connected to the photodetection region 11 via a signal line 18V. Each signal line 18V may include a plurality of signal lines. The column signal processing circuit 15 is arranged, for example, for each pixel column, and performs signal processing such as noise removal for each pixel column on pixel signals from pixels 12 in one row. The column signal processing circuit 15 performs signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise specific to the pixels 12, signal amplification, AD (Analog to Digital) conversion, etc. A horizontal selection switch (not shown) is connected between the output stage of the column signal processing circuit 15 and the signal line 18V.

[0019] The horizontal drive circuit 16 includes, for example, a shift register. The horizontal drive circuit 16 sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 15 in turn, and causes each of the column signal processing circuits 15 to output a pixel signal to a signal line 19.

[0020] The output circuit 17 processes and outputs pixel signals sequentially supplied from each of the column signal processing circuits 15 through a signal line 19. For example, buffering, black level adjustment, column variation correction, various digital signal processing, etc. are performed.

[0021] 2 and 3 are diagrams showing an example of a schematic configuration of the photodetection region 11. FIG. 2 shows a schematic cross section of a part of the photodetection region 11 when viewed from the side (when viewed in a direction perpendicular to the Z-axis direction (XY plane direction)), which in this example corresponds to approximately one pixel 12. FIG. 3 shows a schematic planar layout of some components of the photodetection region 11 when viewed in a plan view (when viewed in the negative Z-axis direction), specifically, electrodes of an electrode layer 8 described below (in this example, a readout electrode 81, a storage electrode 82, and a separation electrode 83) and a light-shielding portion 3. In FIG. 3, elements located below the light-shielding portion 3 (on the negative Z-axis direction side) are shown by dashed lines.

[0022] The light to be detected by the light detection region 11 is referred to as light L and illustrated. The light L includes light L1 and light L2. The light L1 is light in a first wavelength band (first light). The light L2 is light in a second wavelength band (second light) different from the first wavelength band.

[0023] For example, one of the light L1 and the light L2 includes infrared light, and the other includes visible light. An example of a wavelength band of infrared light is 850 nm or more and 1050 nm or less. An example of a wavelength band of visible light is 400 nm or more and 700 nm or less. In the first embodiment, the light L1 is visible light, and the light L2 is infrared light.

[0024] The light detection region 11 includes a photoelectric conversion unit 1, a photoelectric conversion unit 2, and a light-shielding unit 3. The photoelectric conversion unit 2 and the photoelectric conversion unit 1 are located in this order in the positive direction of the Z axis. For example, the photoelectric conversion unit 2 is formed in a semiconductor substrate, and the photoelectric conversion unit 1 is formed on the semiconductor substrate (for example, on the back surface of the substrate).

[0025] The photoelectric conversion unit 1 is a first photoelectric conversion unit used to detect light L1 of light L1 and light L2. The photoelectric conversion unit 1 is configured to generate charges according to the amount of light L1 incident on the photoelectric conversion unit 1. In the example shown in Fig. 2, the photoelectric conversion unit 1 includes a sealing layer 4, an electrode layer 5, a photoelectric conversion layer 6, a charge accumulation and transfer layer 7, and an electrode layer 8. The electrode layer 8, the charge accumulation and transfer layer 7, the photoelectric conversion layer 6, the electrode layer 5, and the sealing layer 4 are stacked in this order in the positive direction of the Z axis.

[0026] In addition, the word "layer" may be interpreted as a film, and these terms may be interpreted appropriately as long as there is no contradiction.

[0027] In this example, the sealing layer 4 is provided on the electrode layer 5 so as to cover the other layers (electrode layer 5, photoelectric conversion layer 6, charge storage and transfer layer 7, and electrode layer 8) of the photoelectric conversion unit 1. The sealing layer 4 is composed of, for example, various known insulating materials. Examples of materials for the sealing layer 4 include SiO2, SiN, etc. The sealing layer 4 can also be called a protective layer.

[0028] The electrode layer 5 is an upper electrode layer located above the photoelectric conversion layer 6. The electrode layer 5 includes an upper electrode 51. In this example, the upper electrode 51 is provided over the entire electrode layer 5. The upper electrode 51 may be provided for each pixel 12, or may be provided in common for two or more adjacent pixels. The upper electrode 51 is configured to transmit (transmit) light L. An example of a material for the upper electrode 51 is ITO, etc.

[0029] The photoelectric conversion layer 6 absorbs one of the light L1 and the light L2 and passes the other light. In this example, the photoelectric conversion layer 6 absorbs the light L1 and passes the light L2. The photoelectric conversion layer 6 generates charges according to the amount of the absorbed light L1. The photoelectric conversion layer 6 may be an organic photoelectric conversion layer formed using an organic material (organic photoelectric conversion material). Various known organic photoelectric conversion materials may be used.

[0030] The charge accumulation and transfer layer 7 is provided between the photoelectric conversion layer 6 and the electrode layer 8 so as to accumulate and transfer (move) the charges generated in the photoelectric conversion layer 6. The charge accumulation and transfer layer 7 is formed so as to pass light that has passed through the photoelectric conversion layer 6, in this example, light L2. The charge accumulation and transfer layer 7 may be, for example, a semiconductor layer, and examples of materials for the charge accumulation and transfer layer 7 in this case include oxide semiconductors such as IGZO and organic semiconductors. By providing such a charge accumulation and transfer layer 7 between the photoelectric conversion layer 6 and the electrode layer 8, it is possible to prevent recombination of charges during charge accumulation and improve transfer efficiency. The transfer of charges by the charge accumulation and transfer layer 7 will be described later.

[0031] The electrode layer 8 is a lower electrode layer provided below the photoelectric conversion layer 6 (on the negative Z-axis direction side) so as to face the photoelectric conversion layer 6. The electrode layer 8 includes an insulator 80 and a plurality of electrodes. In this example, the plurality of electrodes include a readout electrode 81, a storage electrode 82, and a separation electrode 83. The insulator 80 is provided so as to cover the readout electrode 81, the storage electrode 82, and the separation electrode 83, except for a portion of the readout electrode 81. Note that portions of the electrode layer 8 other than the electrodes and the insulator 80 may also be insulators.

[0032] The readout electrode 81 is used to read out charges generated in the photoelectric conversion layer 6, more specifically, charges accumulated in the charge accumulation and transfer layer 7 in this example. A portion of the readout electrode 81 that is not covered with the insulator 80 is electrically connected to the charge accumulation and transfer layer 7, thereby allowing the charges accumulated in the charge accumulation and transfer layer 7 to move to the readout electrode 81. The readout electrode 81 is connected to wiring (including vias) not shown, and the charges are read out via the readout electrode 81 and the wiring.

[0033] The storage electrode 82 is used to store charges generated in the photoelectric conversion layer 6 in the charge storage and transfer layer 7. The charge storage operation by the storage electrode 82 will be described later.

[0034] The separation electrode 83 is used to separate adjacent pixels 12. The separation provided by the separation electrode 83 may be electrical separation or optical separation.

[0035] 3, in this example, a readout electrode 81 is provided in common for four pixels 12 arranged in two rows and two columns in the X-axis and Y-axis directions. A storage electrode 82 is provided for each pixel 12, and therefore, a plurality of storage electrodes 82 exist for one readout electrode 81. A set of four pixels 12 arranged in a row as shown in the figure (which may also be called a pixel unit, etc.) is repeatedly arranged in the X-axis and Y-axis directions in the light detection region 11.

[0036] When the photodetection region 11 is viewed in a plan view, the readout electrode 81 is located in the center of all four pixels 12. A plurality of storage electrodes 82, in this example, four storage electrodes 82, are arranged to surround one readout electrode 81. A separation electrode 83 is provided between adjacent ones of the plurality of storage electrodes 82.

[0037] The electrode layer 8 transmits at least light that has passed through the photoelectric conversion layer 6, in this example, light L2. The material of each electrode of the electrode layer 8 may be the same as the material of the upper electrode 51. The light L2 that has passed through the electrode layer 8 is incident on the photoelectric conversion unit 2.

[0038] The portion between the electrodes in the electrode layer 8 (interelectrode portion) is also referred to as the intermediate portion. In Fig. 2, the intermediate portion between the readout electrode 81 and the storage electrode 82 is referred to as the intermediate portion 8a and illustrated. The portion of the charge accumulation and transfer layer 7 that covers the intermediate portion 8a of the electrode layer 8, i.e., the portion facing the intermediate portion 8a, is referred to as the intermediate portion 7a and illustrated. The portion of the photoelectric conversion layer 6 that covers the intermediate portion 7a of the charge accumulation and transfer layer 7, i.e., the portion facing the intermediate portion 7a, is referred to as the intermediate portion 6a and illustrated.

[0039] An example of the operation of the photoelectric conversion unit 1 having the above configuration will be described. For example, among the upper electrode 51, the readout electrode 81, and the storage electrode 82, voltages are applied to these electrodes so that the upper electrode 51 has a negative potential and the readout electrode 81 and the storage electrode 82 have a positive potential. Also, a voltage is applied so that the potential of the storage electrode 82 is higher than the potential of the readout electrode 81.

[0040] In the photoelectric conversion layer 6, charges are generated according to the amount of incident light L1, more specifically, the amount of absorbed light L1. Due to the potential difference between the upper electrode 51 and the readout electrode 81 and storage electrode 82, the charges generated in the photoelectric conversion layer 6 move downward (Z-axis negative direction) and are accumulated in the charge accumulation and transfer layer 7. Since the storage electrode 82 has a larger positive potential than the readout electrode 81, charges are accumulated in the charge accumulation and transfer layer 7, particularly in the portion facing the storage electrode 82.

[0041] Thereafter, a voltage is applied to the readout electrode 81 so that the potential of the readout electrode 81 becomes greater than the potential of the storage electrode 82. The charges stored in the charge storage and transfer layer 7 move toward the readout electrode 81. The readout electrode 81 is connected to a floating diffusion (corresponding to floating diffusion FD1 in FIG. 5 described later) corresponding to the photoelectric conversion unit 1. The charges stored in the charge storage and transfer layer 7 are transferred to the FD via the readout electrode 81. A pixel signal corresponding to the photoelectric conversion unit 1 is generated by a pixel transistor (such as an amplification transistor AMP1 in FIG. 5 described later).

[0042] The photoelectric conversion unit 2 is a second photoelectric conversion unit used to detect light that has passed through the photoelectric conversion unit 1, of the light L1 and the light L2, in this example, the light L2. The photoelectric conversion unit 2 is provided below the photoelectric conversion unit 1, and the light L2 that has passed through the photoelectric conversion unit 1 is incident on the photoelectric conversion unit 2. The photoelectric conversion unit 2 generates charges according to the amount of the incident light L2, more specifically, the absorbed light L2. The photoelectric conversion unit 2 includes a photoelectric conversion element such as a photodiode. The charges generated in the photoelectric conversion unit 2 are transferred to a floating diffusion (corresponding to a floating diffusion FD2 in FIG. 5 described later) corresponding to the photoelectric conversion unit 2 via a transfer transistor (corresponding to a transfer transistor TG2 in FIG. 5 described later). A pixel signal corresponding to the photoelectric conversion unit 2 is generated by a pixel transistor (such as an amplification transistor AMP2 in FIG. 5 described later).

[0043] The light shielding portion 3 is provided above (on the positive side of the Z-axis) at least a portion of the photoelectric conversion layer 6. For example, the light shielding portion 3 is provided above the electrode layer 8 so as to cover a portion of the photoelectric conversion layer 6 (and a portion of the charge storage and transfer layer 7 in this example) as well as a portion of the electrode layer 8. The light shielding portion 3 may also be called a light shielding film or a light shielding layer. The light shielding provided by the light shielding portion 3 may be understood to include the absorption, reflection, etc. of light, and may also be understood to mean changing the traveling direction of light.

[0044] In one embodiment, the light shielding unit 3 may have wavelength selectivity. For example, the light shielding unit 3 shields one of the light L1 and the light L2 and passes the other light. In the example shown in Fig. 2, the light shielding unit 3 shields the light L1 and passes the light L2. The light shielding unit 3 can also be called an IR pass filter that passes infrared light (an example of the light L2).

[0045] An example of the material of the light shielding portion 3 is an organic material such as a phthalocyanine dielectric. The light shielding portion 3 may have a thickness (length in the Z-axis direction) of, for example, 100 nm to 1000 nm, more specifically, a thickness of 400 nm to 700 nm. This makes it easier to absorb visible light while allowing infrared light to pass through.

[0046] In one embodiment, the light shielding portion 3 may have a multi-layer structure, and an inorganic material may be used as the material of the light shielding portion 3. The following will be described with reference to FIG.

[0047] 4 is a diagram showing an example of a light-shielding part 3 having a multi-layer structure. The light-shielding part 3 includes a plurality of inorganic layers. Examples of the plurality of inorganic layers include inorganic layers 31 and 32 formed of different materials. In this example, inorganic layers 31 and 32 are repeatedly laminated in this order in the positive direction of the Z axis to obtain a four-layer structure.

[0048] The inorganic layer 31 is a first inorganic layer having a relatively high refractive index for visible light (an example of light L1). An example of a material for the inorganic layer 31 is an inorganic material such as amorphous silicon, more specifically, hydrogenated amorphous silicon (a-Si:H). The inorganic layer 32 is a second inorganic layer having a relatively low refractive index for visible light. An example of a material for the inorganic layer 32 is an inorganic material such as silicon oxide (SiO).

[0049] Returning to Figures 2 and 3, in this example, the light-shielding portion 3 is provided within the sealing layer 4 so as to cover part of the sealing layer 4, part of the electrode layer 5, part of the photoelectric conversion layer 6, part of the charge storage and transfer layer 7, and part of the electrode layer 5.

[0050] In this embodiment, the light shielding portion 3 is provided so as to cover at least a part of the outer periphery region of a specific electrode among the multiple electrodes of the electrode layer 8. The outer periphery region is a region located outside the specific electrode in the surface direction of each layer (XY plane direction).

[0051] The peripheral region of the specific electrode may include the region between the specific electrode and the adjacent electrode. An example of the specific electrode is the storage electrode 82. To the extent not inconsistent, the storage electrode 82 may be appropriately interpreted as the specific electrode.

[0052] An example of the storage electrode 82 and its adjacent electrode is the storage electrode 82 and the readout electrode 81. In this case, the peripheral region of the storage electrode 82 is the region between the storage electrode 82 and the readout electrode 81, and corresponds to the intermediate portion 8a of the electrode layer 8.

[0053] Another example of a storage electrode 82 and its adjacent electrode is a storage electrode 82 and its adjacent storage electrode 82. In this case, the peripheral region of the storage electrode 82 is the region between the adjacent storage electrodes 82. A separation electrode 83 may be provided in this region.

[0054] The light shielding portion 3 extends so as to cover the outer peripheral region of the storage electrode 82, for example at least a part of the intermediate portion 8a of the electrode layer 8. In the example shown in Figures 2 and 3, the light shielding portion 3 includes an extension portion 3a and an extension portion 3b. The extension portion 3a and the extension portion 3b are connected to each other in the XY plane direction.

[0055] In a plan view, the extension portion 3a extends between the storage electrode 82 and the adjacent electrode, between the storage electrode 82 and the readout electrode 81 in this example, in a direction intersecting the direction in which the storage electrode 82 and the readout electrode 81 face each other. In the example shown in FIG. 3, the extension portion 3a extends so as to surround the readout electrode 81. The extension portion 3a has a ring shape that includes the readout electrode 81 inside. The extension portion 3b extends so as to cover the readout electrode 81. In the example shown in FIG. 3, the extension portion 3b extends so as to fill the inside of the ring shape of the extension portion 3a.

[0056] The extending portion 3a covers at least a part of the intermediate portion 8a of the electrode layer 8, and therefore at least a part of the intermediate portion 7a of the charge storage and transfer layer 7 and at least a part of the intermediate portion 6a of the photoelectric conversion layer 6. The region located further outward from the above is covered by the extending portion 3b. The technical significance of such a light shielding portion 3 will be explained later.

[0057] 5 is a diagram showing an example of an equivalent circuit of the pixel 12. The diagram illustrates a photoelectric conversion unit 1, a photoelectric conversion unit 2, and a light-shielding unit 3 included in the pixel 12, as well as several circuit elements provided around them.

[0058] In the following explanation of the equivalent circuit, connection may be understood to include electrical connection via other elements such as wiring. Furthermore, all transistors are assumed to be FETs such as MOSFETs. Unless otherwise specified, when a transistor is connected to an element, it is assumed that one of the drain and source of the transistor is connected to the element. When a transistor is connected between two elements, it is assumed that one of the drain and source is connected to one element, and the other is connected to the other element. When a transistor is on and off, it is assumed that the drain and source are in a conductive state and a non-conductive state.

[0059] Several signal lines 18H and signal lines 18V passing through the pixels 12 are also illustrated with reference numerals. The signal lines 18H include a signal line that supplies a signal SG_RST1, a signal line that supplies a signal SG_VOA, a signal line that supplies a signal SG_SEL1, a signal line that supplies a signal SG_RST2, a signal line that supplies a signal SG_TG2, and a signal line that supplies a signal SG_SEL2. The signal lines 18V include a signal line that outputs a pixel signal VSL1 corresponding to the photoelectric conversion unit 1, and a signal line that outputs a pixel signal VSL2 corresponding to the photoelectric conversion unit 2.

[0060] A signal line for supplying a power supply voltage to each transistor also passes through the pixel 12. The power supply voltage is referred to as a power supply voltage VDD. A signal line for supplying a voltage to the upper electrode 51 also passes through the pixel 12. The voltage supplied to the upper electrode 51 is referred to as a voltage VOU.

[0061] As circuit elements provided for the photoelectric conversion unit 1, a floating diffusion FD1, a reset transistor RST1, an amplifier transistor AMP1, and a selection transistor SEL1 are illustrated with reference symbols.

[0062] The floating diffusion FD1 is a floating capacitance connected to the readout electrode 81 of the photoelectric conversion unit 1. As described above, the charge generated in the photoelectric conversion unit 1 is transferred to the floating diffusion FD1 via the readout electrode 81 of the photoelectric conversion unit 1 and accumulated in the floating diffusion FD1. The floating diffusion FD1 generates a voltage according to the amount of accumulated charge.

[0063] The reset transistor RST1 is connected between the floating diffusion FD1 and a power supply voltage VDD, and resets the floating diffusion FD1. A signal line 18H that supplies a signal SG_RST1 is connected to the gate of the reset transistor RST1, and the reset transistor RST1 is controlled to be turned on and off by the signal line 18H. When the reset transistor RST1 is turned on, the charge in the floating diffusion FD1 is discharged, and the floating diffusion FD1 is reset.

[0064] The amplifier transistor AMP1 is connected between a power supply voltage VDD and the selection transistor SEL1. A floating diffusion FD1 is connected to the gate of the amplifier transistor AMP1. The amplifier transistor AMP1, for example, amplifies and outputs the voltage of the floating diffusion FD1.

[0065] The selection transistor SEL1 is connected between the amplification transistor AMP1 and a signal line 18V that supplies a pixel signal VSL1, and selectively outputs the output voltage of the amplification transistor AMP1 to the signal line 18V. A signal line 18H that supplies a signal SG_SEL1 is connected to the gate of the selection transistor SEL1, thereby controlling the on and off of the selection transistor SEL1. When the selection transistor SEL1 is turned on, the output voltage of the amplification transistor AMP1 is output to the signal line 18V as the pixel signal VSL1.

[0066] Circuit elements provided for the photoelectric conversion unit 2 are exemplified by a floating diffusion FD2, a transfer transistor TG2, a reset transistor RST2, an amplifier transistor AMP2, and a selection transistor SEL2, each of which is given a reference symbol.

[0067] The transfer transistor TG2 is connected between the photoelectric conversion unit 2 and the floating diffusion FD2, and transfers the charge generated in the photoelectric conversion unit 2 to the floating diffusion FD2. A signal line 18H that supplies a signal SG_TG2 is connected to the gate of the transfer transistor TG2, thereby controlling the on and off of the transfer transistor TG2. When the transfer transistor TG2 is turned on, the charge generated in the photoelectric conversion unit 2 is transferred from the photoelectric conversion unit 2 to the floating diffusion FD2.

[0068] The floating diffusion FD2 is a floating capacitance connected to the photoelectric conversion unit 2 via the transfer transistor TG2. As described above, the charge generated in the photoelectric conversion unit 2 is transferred to the floating diffusion FD2 via the transfer transistor TG2 and accumulated in the floating diffusion FD2. The floating diffusion FD2 generates charge according to the amount of accumulated charge.

[0069] The reset transistor RST2 is connected between the floating diffusion FD2 and a power supply voltage VDD, and resets the floating diffusion FD2. A signal line 18H that supplies a signal SG_RST2 is connected to the gate of the reset transistor RST2, and the reset transistor RST2 is controlled to be turned on and off by the signal line 18H. When the reset transistor RST2 is turned on, the charge in the floating diffusion FD2 is discharged, and the floating diffusion FD2 is reset.

[0070] The amplifier transistor AMP2 is connected between a power supply voltage VDD and the selection transistor SEL2. The gate of the amplifier transistor AMP2 is connected to the floating diffusion FD2. The amplifier transistor AMP2, for example, amplifies and outputs the voltage of the floating diffusion FD2.

[0071] The selection transistor SEL2 is connected between the amplification transistor AMP2 and a signal line 18V that supplies a pixel signal VSL2, and selectively outputs the output voltage of the amplification transistor AMP2 to the signal line 18V. A signal line 18H that supplies a signal SG_SEL2 is connected to the gate of the selection transistor SEL2, thereby controlling the on and off of the selection transistor SEL2. When the selection transistor SEL2 is turned on, the output voltage of the amplification transistor AMP2 is output to the signal line 18V as the pixel signal VSL2.

[0072] In this manner, the pixel 12 obtains a pixel signal VSL1 corresponding to the amount of light L1 incident on the photoelectric conversion unit 1, and a pixel signal VSL2 corresponding to the amount of light L2 incident on the photoelectric conversion unit 2. The pixel signals VSL1 and VSL2 are processed by the column signal processing circuit 15 and the output circuit 17 described above with reference to FIG.

[0073] 2 and 3, the technical significance of the light-shielding portion 3 will be described. As described above, the light-shielding portion 3 covers at least a part of the outer circumferential region of the storage electrode 82. For example, the light-shielding portion 3 includes an extending portion 3a extending to cover at least a part of the intermediate portion 8a of the electrode layer 8, the intermediate portion 7a of the charge storage and transfer layer 7, and the intermediate portion 6a of the photoelectric conversion layer 6.

[0074] If the light shielding portion 3 were not present, the light L1 would be incident on the intermediate portion 6a of the photoelectric conversion layer 6, and the electric charge generated there would pass through the intermediate portion 6a of the photoelectric conversion layer 6 and the intermediate portion 7a of the charge accumulation and transfer layer 7 to be accumulated in the storage electrode 82, and then be read out to the readout electrode 81 during transfer. However, not all of the electric charges passing through the intermediate portion 6a of the photoelectric conversion layer 6 and the intermediate portion 7a of the charge accumulation and transfer layer 7 necessarily move toward the storage electrode 82 of the electrode layer 8. There is a probability that some of the electric charges may move toward other electrodes of the electrode layer 8 (for example, the readout electrode 81 or another adjacent storage electrode 82). Such unintended movement of electric charges may cause, for example, noise, and may cause variations in the sensitivity of light detection using the photoelectric conversion portion 1, thereby degrading the light detection performance of the light detection device 10.

[0075] The above problem is addressed by providing the light-shielding portion 3. That is, by providing the light-shielding portion 3, the generation of charges in the intermediate portion 6a of the photoelectric conversion layer 6 is suppressed. Accordingly, the charge that moves downward (in the negative direction of the Z axis) from the intermediate portion 6a of the photoelectric conversion layer 6 to the intermediate portion 7a of the opposing charge accumulation and transfer layer 7 and further passes through the intermediate portion 7a of the charge accumulation and transfer layer 7 is also suppressed. Since the above-mentioned unintended charge movement is also suppressed, it is possible to suppress a decrease in the light detection performance of the light detection device 10 caused by, for example, noise.

[0076] Even if the peripheral region of the storage electrode 82 is the region between adjacent storage electrodes 82, by covering at least a portion of that region with the light-shielding portion 3, the deterioration of the light detection performance of the light detection device 10 can be suppressed for the same reason.

[0077] 2. Modifications of the light-shielding part Several modified examples of the arrangement, configuration, etc. of the light shielding portion 3 will be described with reference to FIGS.

[0078] 6 to 13 are diagrams showing modified examples of the light-shielding part 3. In the example shown in Fig. 6, the light-shielding part 3 is provided on the sealing layer 4 on the opposite side (the positive Z-axis direction side) to the electrode layer 5 across the sealing layer 4. Even in this case, the extension part 3a of the light-shielding part 3 covers at least a part of the intermediate part 6a of the photoelectric conversion layer 6, the intermediate part 7a of the charge storage and transfer layer 7, and the intermediate part 8a of the electrode layer 8, so that a decrease in the light detection performance is suppressed.

[0079] 7, the light-shielding portion 3 is provided in the sealing layer 4 so as to be in contact with the electrode layer 5. Even in this case, the extension portion 3a of the light-shielding portion 3 covers at least a part of the intermediate portion 6a of the photoelectric conversion layer 6, the intermediate portion 7a of the charge storage and transfer layer 7, and the intermediate portion 8a of the electrode layer 8, so that a decrease in the light detection performance is suppressed.

[0080] 8, the light-shielding portion 3 has the same thickness as the sealing layer 4 and is provided in the sealing layer 4. Even in this case, the extension portion 3a of the light-shielding portion 3 covers at least a part of the intermediate portion 6a of the photoelectric conversion layer 6, the intermediate portion 7a of the charge storage and transfer layer 7, and the intermediate portion 8a of the electrode layer 8, so that a decrease in the light detection performance is suppressed.

[0081] 9, the light-shielding portion 3 has the same thickness as the electrode layer 5 and is provided in the electrode layer 5. Even in this case, the extension portion 3a of the light-shielding portion 3 covers at least a part of the intermediate portion 6a of the photoelectric conversion layer 6, the intermediate portion 7a of the charge storage and transfer layer 7, and the intermediate portion 8a of the electrode layer 8, so that a decrease in the light detection performance is suppressed.

[0082] 10, the light-shielding portion 3 is provided in the photoelectric conversion layer 6 so as to be in contact with the electrode layer 5. Even in this case, the extension portion 3a of the light-shielding portion 3 covers at least a part of the intermediate portion 6a of the photoelectric conversion layer 6, the intermediate portion 7a of the charge accumulation and transfer layer 7, and the intermediate portion 8a of the electrode layer 8, so that a decrease in the light detection performance is suppressed.

[0083] 11, the light-shielding portion 3 is provided in the photoelectric conversion layer 6. The portion of the photoelectric conversion layer 6 closer to the charge accumulation and transfer layer 7 and electrode layer 8 (negative Z-axis direction side) than the light-shielding portion 3 corresponds to the intermediate portion 6a of the photoelectric conversion layer 6 described above. Even in this case, the extension portion 3a of the light-shielding portion 3 covers at least a part of the intermediate portion 6a of the photoelectric conversion layer 6, the intermediate portion 7a of the charge accumulation and transfer layer 7, and the intermediate portion 8a of the electrode layer 8, so that a decrease in light detection performance is suppressed.

[0084] In the example shown in FIG. 12, the light shielding portion 3 is a waveguide that guides the light L1 of the incident light L1 and light L2 away from the peripheral region of the storage electrode 82. The light shielding portion 3 has a refractive index different from that of the surrounding portions and extends with an inclination with respect to the Z-axis direction so that the incident light L1 propagates within the light shielding portion 3. In this example, the light shielding portion 3 is provided in the sealing layer 4. By using such a waveguide as the light shielding portion 3, the light L1 incident on the intermediate portion 6a of the photoelectric conversion layer 6 is also suppressed, and therefore, the generation of charges in the intermediate portion 6a of the photoelectric conversion layer 6 is suppressed. Therefore, the deterioration of the light detection performance is suppressed. The light shielding portion 3, which is such a waveguide, may also be provided on the sealing layer 4, in the electrode layer 5, or in the photoelectric conversion layer 6.

[0085] 13, the light detection region 11 further includes a color filter layer 9. The color filter layer 9 is provided so as to cover the photoelectric conversion layer 6, and in this example, is provided on the sealing layer 4. The light shielding portion 3 is provided in the color filter layer 9.

[0086] The color filter layer 9 includes color filters that transmit light of a desired color (e.g., red light, green light, or blue light). The color filters that transmit red light, green light, and blue light are referred to as color filter 90R, color filter 90G, and color filter 90B. When there is no particular distinction between these, they are also simply referred to as color filters 90. The color filters 90 are provided in the color filter layer 9 in a portion other than the light-shielding portion 3. FIG. 13 illustrates color filter 90B as an example of the color filter 90 included in the color filter layer 9.

[0087] The color filter layer 9 may be an element separate from the photoelectric conversion section 1, or may be a component of the photoelectric conversion section 1.

[0088] 3.Examples of manufacturing methods 14 to 20 are diagrams showing an example of a manufacturing method for the photodetector 10. Several examples of manufacturing steps for obtaining a structure including the light-shielding portion 3 described above are shown.

[0089] The manufacturing process shown in FIG. 14 to FIG. 16 is used when obtaining a structure in which the light shielding portion 3 is provided in the sealing layer 4. It is assumed that the processes for obtaining the electrode layer 8, the charge storage and transfer layer 7, the photoelectric conversion layer 6, the electrode layer 5, and the sealing layer 4 have been completed. As shown in FIG. 14, a photoresist PR (photoresist mask) is formed so as to cover the sealing layer 4. The photoresist PR is formed so as to expose the portion of the sealing layer 4 in which the light shielding portion 3 is to be provided. In this state, etching such as dry etching is performed. As shown in FIG. 15, the portion of the sealing layer 4 that is not covered with the photoresist PR is removed. The sealing layer 4 has a groove portion 4a (void portion) corresponding to the light shielding portion 3. In this state, the material of the light shielding portion 3 is, for example, stacked on the sealing layer 4, and planarized by CMP (chemical mechanical polishing). As shown in FIG. 16, a structure in which the light shielding portion 3 is provided in the sealing layer 4 is obtained.

[0090] 17 and 18 are used to obtain a structure in which the light shielding portion 3 is provided in the color filter layer 9. The color filters 90R, 90G, and 90B are formed so that the color filter layer 9 has grooves 9a in the portions in which the light shielding portion 3 is to be provided. In this state, the material of the light shielding portion 3 is, for example, laminated on the sealing layer 4 and the color filter 90, and planarized by CMP. As shown in FIG. 18, a structure in which the light shielding portion 3 is provided in the color filter layer 9 is obtained.

[0091] The manufacturing process shown in FIG. 19 and FIG. 20 is used when obtaining a structure in which the light shielding portion 3 has a multi-layer structure. In this example, the light shielding portion 3 having a multi-layer structure is provided on the sealing layer 4. As shown in FIG. 19, the material 31m of the inorganic layer 31 and the material 32m of the inorganic layer 32 are laminated on the sealing layer 4, and a photoresist PR is formed thereon so as to cover only the portion corresponding to the light shielding portion 3. Etching is performed in this state. The portions of the laminated materials 31m and 32m that are not covered by the photoresist PR are removed. As shown in FIG. 20, a structure in which the light shielding portion 3 has a laminated structure is obtained. As previously described with reference to FIG. 14 to FIG. 16, after forming a groove portion corresponding to the light shielding portion 3, the material 31m and the inorganic layer 32 may be laminated and planarized by CMP.

[0092] 4. Further Modifications of the Light-Shielding Part Further modifications of the light shielding portion 3 will be described mainly from the viewpoint of the planar layout.

[0093] 21 to 30 are diagrams showing modified examples of the light shielding section 3. The planar layout of the light shielding section 3 as viewed in the negative direction of the Z axis is shown typically.

[0094] 21 to 23, the light shielding portion 3 further includes an extension portion 3c. The extension portion 3c is located on the opposite side of the extension portion 3a from the extension portion 3b. The extension portion 3a and the extension portion 3c are connected to each other in the XY plane direction. The extension portion 3c extends so as to surround each of the multiple storage electrodes 82, and more specifically, the extension portion 3a and the extension portion 3c extend so as to surround each storage electrode 82 as a whole.

[0095] The extension portion 3c covers at least a part of the region between adjacent storage electrodes 82. The extension portion 3c extends so as to cover at least a part of the separation electrode 83 in a plan view.

[0096] In the example shown in FIG. 21, the extension 3c of the light shield 3 extends so as to cover the entirety of the separated electrode 83. The extension 3c of the light shield 3 includes an extension 3c1, an extension 3c2, and an extension 3c3. The extension 3c1 extends in the Y-axis positive direction and the Y-axis negative direction from the opposite side of the extension 3a to the extension 3b in the Y-axis direction. The extension 3c2 extends in the X-axis positive direction and the X-axis negative direction from the opposite side of the extension 3a to the extension 3b in the X-axis direction. The extension 3c3 extends, for example, in an L-shape so as to connect the tips of the extension 3c1 and the extension 3c2 to each other.

[0097] 22 and 23, the light-shielding portion 3 extends so as to cover a portion of the separation electrode 83. In the example shown in Fig. 22, the extension portion 3c of the light-shielding portion 3 includes only the extension portion 3c1 and the extension portion 3c2. In the example shown in Fig. 23, the extension portion 3c of the light-shielding portion 3 includes only the extension portion 3c1. Note that, contrary to Fig. 23, the extension portion 3c of the light-shielding portion 3 may include only the extension portion 3c2.

[0098] As described above, the region between adjacent storage electrodes 82, more specifically, the region including the separation electrode 83, may also be the outer circumferential region of the storage electrode 82. Covering at least a part of this region with the extension 3c of the light-shielding portion 3 also suppresses the deterioration of the light detection performance.

[0099] 24 to 27, the light shielding portion 3 is provided so as not to cover the readout electrode 81. It can also be said that the light shielding portion 3 has an opening portion facing the readout electrode 81.

[0100] 24, the light shielding portion 3 includes only the extending portion 3a. Since the light shielding portion 3 includes the extending portion 3a, the deterioration of the light detection performance is suppressed.

[0101] 25, the light shielding portion 3 includes only the extension portion 3c. In this example, the extension portion 3c includes the extension portion 3c1, the extension portion 3c2, and the extension portion 3c3. Since the light shielding portion 3 includes the extension portion 3c, the deterioration of the light detection performance is suppressed.

[0102] 26 and 27, the light shielding portion 3 includes an extension portion 3a and an extension portion 3c. In the example shown in FIG. 26, the extension portion 3c includes an extension portion 3c1 and an extension portion 3c2. In the example shown in FIG. 27, the extension portion 3c includes an extension portion 3c1. In either case, since the light shielding portion 3 includes the extension portion 3a and the extension portion 3c, a decrease in the light detection performance is suppressed.

[0103] 28 to 30 show an example of a planar layout of the light-shielding portion 3 provided in the color filter layer 9. In this example, of the four pixels 12 in two rows and two columns, the color filter layer 9 of two pixels 12 includes a color filter 90G. The color filter layer 9 of one pixel 12 includes a color filter 90B. The color filter layer 9 of one pixel 12 includes a color filter 90R. That is, the four pixels 12 are arranged in a Bayer arrangement.

[0104] 28, the light shielding portion 3 includes an extending portion 3a and an extending portion 3b. Since the light shielding portion 3 includes the extending portion 3a, a decrease in the light detection performance is suppressed.

[0105] 29, the light shielding portion 3 includes an extending portion 3c. In this example, the extending portion 3c includes an extending portion 3c3. Since the light shielding portion 3 includes the extending portion 3c, a decrease in the light detection performance is suppressed.

[0106] 30, the light shielding portion 3 includes an extension portion 3a, an extension portion 3b, and an extension portion 3c. In this example, the extension portion 3c includes an extension portion 3c1, an extension portion 3c2, and an extension portion 3c3. Since the light shielding portion 3 includes the extension portion 3a and the extension portion 3c, a decrease in the light detection performance is suppressed.

[0107] 5. Modification of the light detection area In one embodiment, the photoelectric conversion unit 1 of the photodetection region 11 does not need to include the charge storage and transfer layer 7. Such a modified example will be described with reference to FIGS.

[0108] Figures 31 and 32 are diagrams showing modified examples of the light detection region 11. Figure 31 diagrammatically shows a cross section of a portion of the light detection region 11 when viewed from the side. Figure 32 diagrammatically shows the planar layout of the light detection region 11 when viewed in plan.

[0109] 31 and 32 differs from FIG. 2 described above in that the photoelectric conversion section 1 does not include a charge storage and transfer layer 7, and the electrode layer 8 does not include an insulator 80 and a storage electrode 82. A photoelectric conversion layer 6 is provided on the electrode layer 8, and a readout electrode 81 is in contact with and electrically connected to the photoelectric conversion layer 6. Charges generated in the photoelectric conversion layer 6 are read out via the readout electrode 81.

[0110] 32, a readout electrode 81 is provided for each pixel 12. There are a plurality of readout electrodes 81 corresponding to a plurality of pixels 12. A separation electrode 83 is provided between adjacent readout electrodes 81 (pixels 12) among a plurality of storage electrodes 82.

[0111] As described above, the light-shielding portion 3 is provided so as to cover at least a part of the peripheral region of the specific electrode, more specifically, the region between the specific electrode and its adjacent electrode. In the example shown in Fig. 31 and Fig. 32, the specific electrode and its adjacent electrode are the separation electrode 83 and the readout electrode 81.

[0112] The light shielding portion 3 is provided so as to cover at least a part of the region between the separation electrode 83 and the readout electrode 81. In the example shown in Fig. 32, in plan view, the light shielding portion 3 extends so as to surround the readout electrode 81 and cover the separation electrode 83. Even in such a configuration, the light shielding portion 3 covers at least a part of the outer peripheral region of a specific electrode, in this example, the separation electrode 83, so that deterioration of the light detection performance is suppressed.

[0113] 6. Pixel layout variations Various modifications are possible to the layout of the multiple pixels 12. An example will be described with reference to FIG.

[0114] Fig. 33 is a diagram showing a modified example of the pixel layout. In this example, a readout electrode 81 is provided in common to two storage electrodes 82 (two pixels 12). A separation electrode 83 is provided so as to surround the two storage electrodes 82 together. Note that the pixel layout shown in Fig. 33 is merely an example, and various other pixel layouts may be adopted.

[0115] 7.Modification of electrode layer 34 is a diagram showing a modified example of the electrode layer 8. The electrode layer 8 further includes a charge transfer electrode 84. The charge transfer electrode 84 is provided between the readout electrode 81 and the storage electrode 82, i.e., in the intermediate portion 8a, and extends so as to face the intermediate portion 7a of the charge storage and transfer layer 7.

[0116] The charge transfer electrode 84 is used to promote the movement of charges in the intermediate portion 7a of the charge accumulation and transfer layer 7. For example, during charge transfer, a voltage is applied to the readout electrode 81 and the storage electrode 82 so that the charge transfer electrode 84 has a potential between the potentials of these electrodes. The charges accumulated in the charge accumulation and transfer layer 7 move more easily toward the readout electrode 81 than in the absence of the charge transfer electrode 84.

[0117] 35 and 36 are diagrams showing examples of the planar layout of the electrode layer 8 including the charge transfer electrode 84. In the example shown in FIG. 35, the charge transfer electrode 84 extends continuously (connected) across four pixels 12. When viewed in a plan view, the charge transfer electrode 84 has a ring shape including the readout electrode 81 inside. In the example shown in FIG. 36, a corresponding charge transfer electrode 84 is provided for each of the four pixels 12. When viewed in a plan view, the charge transfer electrode 84 of each pixel 12 is provided between the readout electrode 81 and the storage electrode 82 of that pixel 12.

[0118] 8. Second embodiment In the second embodiment, light L1 includes infrared light and is detected using a photoelectric conversion unit 1. Light L2 includes visible light and is detected using a photoelectric conversion unit 2. Description will be made with reference to FIG.

[0119] 37 is a diagram showing an example of a schematic configuration of the light detection region 11. A cross section of a portion of the light detection region 11 when viewed from the side is shown typically. Light L1 includes infrared light, and light L2 includes visible light. More specifically, light L2 includes green light LG, blue light LB, and red light LR. An example of the wavelength band of the green light LG is 500 nm or more and less than 600 nm. An example of the wavelength band of the blue light LB is 400 nm or more and less than 500 nm. An example of the wavelength band of the red light LR is 600 nm or more and less than 700 nm.

[0120] The photoelectric conversion layer 6 of the photoelectric conversion unit 1 absorbs light L1 (infrared light in this example) and transmits light L2 (visible light in this example). The photoelectric conversion layer 6 generates charges according to the amount of incident light L1, more specifically, the amount of absorbed light L1.

[0121] The photoelectric conversion unit 2 generates charges according to the amount of corresponding light of the light L2, in this example, green light LG, blue light LB, or red light LR. The photoelectric conversion unit 2 includes a photoelectric conversion element 20. The photoelectric conversion element 20 is, for example, a photodiode (PD) formed in a silicon semiconductor substrate. The photoelectric conversion element 20 that generates charges according to the amount of red light LR is referred to as photoelectric conversion element 20R and illustrated. The photoelectric conversion element 20 that generates charges according to the amount of green light LG is referred to as photoelectric conversion element 20B and illustrated.

[0122] A color filter layer 9 is provided so as to selectively allow any one of green light LG, blue light LB, and red light LR contained in light L2 to be incident on a corresponding photoelectric conversion element 20. In this example, the color filter layer 9 is provided between the photoelectric conversion unit 1 and the photoelectric conversion unit 2. The color filter layer 9 includes a corresponding color filter 90 for each pixel 12. In FIG. 37, a color filter 90R and a color filter 90B are exemplified as the color filter 90.

[0123] The light shielding portion 3 shields the light L1 out of the light L1 and the light L2, and passes the light L2. Such a light shielding portion 3 can also be called an IR cut filter that cuts infrared light (an example of the light L1). The arrangement of the light shielding portion 3 is the same as before. The light shielding portion 3 is provided so as to cover at least a part of the outer peripheral region of a specific electrode of the electrode layer 8, for example, the storage electrode 82. This suppresses the deterioration of the light detection performance.

[0124] In the second embodiment as well, the same configurations as those shown in FIGS. 21 to 36 described above may be employed.

[0125] 9. Third embodiment In the third embodiment, both the light L1 and the light L2 include visible light. The light L1 includes one or more of green light LG, blue light LB, and red light LR. The light L2 includes the remaining light. Description will be made with reference to Figs. 38 to 41.

[0126] Fig. 38 and Fig. 39 are diagrams showing an example of a schematic configuration of the light detection region 11. Fig. 31 shows a schematic cross section of a portion of the light detection region 11 when viewed from the side. Fig. 32 shows a schematic planar layout of the light detection region 11 when viewed in plan.

[0127] In this example, the light L1 includes green light LG, and the light L2 includes blue light LB and red light LR.

[0128] The photoelectric conversion layer 6 of the photoelectric conversion unit 1 absorbs light L1 and transmits light L2. In this example, the photoelectric conversion layer 6 absorbs green light LG and transmits blue light LB and red light LR. The photoelectric conversion layer 6 generates charges according to the amount of incident light L1, more specifically, the amount of absorbed light L1.

[0129] The photoelectric conversion unit 2 generates charges according to the amount of the corresponding light of the light L2, in this example, the blue light LB or the red light LR. As in the previous embodiment 2 (FIG. 37), a color filter layer 9 is provided on the photoelectric conversion unit 2.

[0130] The light shielding portion 3 shields the light L1 out of the light L1 and the light L2, and passes the light L2. In this example, the light shielding portion 3 shields the green light LG, and passes the blue light LB and the red light LR. The arrangement of the light shielding portion 3 is the same as before. The light shielding portion 3 is provided so as to cover at least a part of the outer peripheral region of a specific electrode of the electrode layer 8, for example, the storage electrode 82. This suppresses the deterioration of the light detection performance.

[0131] As shown in FIG. 39, pixels 12 provided with color filters 90B (pixels 12 corresponding to blue light LB) and pixels 12 provided with color filters 90R (pixels 12 corresponding to red light LR) are arranged alternately in the X-axis direction and the Y-axis direction.

[0132] In one embodiment, the light blocking portion 3 may be designed to have different characteristics for each pixel 12. This will be described with reference to Figs.

[0133] Fig. 40 and Fig. 41 are diagrams showing an example of a schematic configuration of the light detection region 11. Fig. 40 shows a schematic cross section of a portion of the light detection region 11 when viewed from the side. Fig. 41 shows a schematic planar layout of the light detection region 11 when viewed in plan.

[0134] The pixel 12 provided with a color filter 90R corresponding to red light LR is illustrated as pixel 12R, and the pixel 12 provided with a color filter 90B corresponding to blue light LB is illustrated as pixel 12B.

[0135] Of the light-shielding portion 3, a portion provided in the pixel 12R is referred to as light-shielding portion 3R and illustrated. The light-shielding portion 3R blocks the green light LG and the blue light LB and passes the red light LR. With respect to the light-shielding portion 3R (with respect to the pixel 12R), the green light LG and the blue light LB become light L1, and the red light LR becomes light L2.

[0136] Of the light-shielding portion 3, a portion provided in the pixel 12B is illustrated and referred to as light-shielding portion 3B. The light-shielding portion 3B blocks the green light LG and the red light LR and passes the blue light LB. With respect to the light-shielding portion 3B (with respect to the pixel 12B), the green light LG and the red light LR become light L1, and the blue light LB becomes light L2.

[0137] The arrangement of the light shielding portion 3 is the same as before. The light shielding portion 3 is provided so as to cover at least a part of the outer peripheral region of a specific electrode of the electrode layer 8, for example, the storage electrode 82. This prevents the deterioration of the light detection performance.

[0138] 41 shows only a schematic portion of the light-shielding portion 3 that covers the separation electrode 83. At the boundary between the adjacent pixels 12B and 12R, the light-shielding portion 3B and the light-shielding portion 3R are disposed adjacent to each other. Since it is possible to suppress light that passes through the separation electrode 83 and is obliquely incident on the adjacent pixel 12, it is expected that the image quality will be improved by suppressing color mixing.

[0139] In the above, the light L1 and the light L2 may be combined with any combination of the green light LG, the blue light LB, and the red light LR. The photoelectric conversion units 1 and 2 are appropriately designed so as to detect the corresponding light.

[0140] In the third embodiment as well, the same configurations as those shown in FIGS. 21 to 36 described above may be employed.

[0141] 10. Fourth embodiment In the fourth embodiment, both light L1 and light L2 contain visible light. Light L1 contains two of green light LG, blue light LB, and red light LR. Light L2 contains the remaining light. The light detection device 10 includes two photoelectric conversion units 1 corresponding to the two lights contained in light L1, and two light-shielding units 3 corresponding to the two photoelectric conversion units 1. The photoelectric conversion unit 1 has a two-layer structure. Description will be made with reference to FIG. 42.

[0142] 42 is a diagram showing an example of a schematic configuration of the light detection region 11. A cross section of a portion of the light detection region 11 when viewed from the side is shown typically.

[0143] In this example, the light L1 includes blue light LB and green light LG, and the light L2 includes red light LR.

[0144] The photoelectric conversion unit 1 has a two-layer structure, and therefore there are two photoelectric conversion units 1. They are referred to as photoelectric conversion unit 1-1 and photoelectric conversion unit 1-2 and are illustrated. The photoelectric conversion unit 1-2 and photoelectric conversion unit 1-2 are provided in this order in the positive direction of the Z axis. In this example, an on-chip lens OC is provided on the sealing layer 4. Light L is incident on the photoelectric conversion unit 1-1 after passing through the on-chip lens OC (for example, after being condensed).

[0145] The photoelectric conversion unit 1-1 includes a sealing layer 4, an electrode layer 5-1, a photoelectric conversion layer 6-1, a charge accumulation and transfer layer 7-1, and an electrode layer 8-1. The basic roles and configurations of these layers may be similar to those of the sealing layer 4, the electrode layer 5, the photoelectric conversion layer 6, the charge accumulation and transfer layer 7, and the electrode layer 8 described above. For example, the electrode layer 8-1 includes a plurality of electrodes such as a storage electrode 82.

[0146] The photoelectric conversion unit 1-2 includes an electrode layer 5-2, a photoelectric conversion layer 6-2, a charge accumulation and transfer layer 7-2, and an electrode layer 8-2. The basic roles and configurations of these layers may be similar to those of the electrode layer 5, the photoelectric conversion layer 6, the charge accumulation and transfer layer 7, and the electrode layer 8 described above. For example, the electrode layer 8-2 includes a plurality of electrodes such as a storage electrode 82.

[0147] In the positive direction of the Z axis, an electrode layer 8-2, a charge accumulation and transfer layer 7-2, a photoelectric conversion layer 6-2, an electrode layer 5-2, an electrode layer 8-1, a charge accumulation and transfer layer 7-1, a photoelectric conversion layer 6-1, an electrode layer 5-1, and a sealing layer 4 are laminated in this order. An on-chip lens OC is provided on the sealing layer 4.

[0148] The photoelectric conversion layer 6-1 of the photoelectric conversion unit 1-1 absorbs blue light LB and transmits red light LR and green light LG. The photoelectric conversion layer 6-2 of the photoelectric conversion unit 1-2 absorbs green light LG and transmits at least red light LR.

[0149] The photoelectric conversion section 2 includes a photoelectric conversion element 20R, and generates electric charges according to the amount of red light LR.

[0150] The light shielding portion 3 includes a light shielding portion 3-1 and a light shielding portion 3-2. The light shielding portion 3-1 is a first light shielding portion provided corresponding to the photoelectric conversion portion 1-1. The light shielding portion 3-2 is a second light shielding portion provided corresponding to the photoelectric conversion portion 1-2.

[0151] The light shielding portion 3-1 is provided so as to cover at least a part of the outer peripheral region of a specific electrode (e.g., storage electrode 82, separation electrode 83) of the electrode layer 8-1 of the photoelectric conversion portion 1-1. The light shielding portion 3-1 blocks blue light LB and transmits red light LR and green light LG. In this example, the light shielding portion 3-1 is provided within the sealing layer 4.

[0152] The light-shielding portion 3-2 is provided so as to cover at least a part of the outer peripheral region of a specific electrode (e.g., storage electrode 82, separation electrode 83) of the electrode layer 8-2 of the photoelectric conversion unit 1-2. The light-shielding portion 3-2 blocks green light LG and transmits at least red light LR. In this example, the light-shielding portion 3-2 is provided within (below the electrode of) the electrode layer 8 of the photoelectric conversion unit 1-1.

[0153] As described above, the light-shielding portion 3-1 and the light-shielding portion 3-2 each cover at least a part of the outer circumferential region of the corresponding specific electrode, thereby suppressing the deterioration of the light detection performance.

[0154] In the above, the light L1 includes blue light LB and green light LG, and the light L2 includes red light LR. However, the present invention is not limited to this example. The light L1 may include any two of the red light LR, blue light LB, and green light LG, and the light L2 may include the remaining one of the two.

[0155] In the fourth embodiment as well, the same configurations as those shown in FIGS. 21 to 36 described above may be employed.

[0156] 11. Fifth embodiment In the fifth embodiment, the light shielding portion 3 is configured to shield all incident light. Examples of the material of such a light shielding portion 3 include a metal material, a resin material, and the like, and the light shielding portion 3 may be a metal light shielding portion or a resin light shielding portion.

[0157] Although the sensitivity of light detection using the photoelectric conversion unit 2 may decrease, the decrease in sensitivity can be suppressed by adjusting the light-shielding region. As an example, by making the light-shielding unit 3 include only the extension portion 3a (opening only the portion of the readout electrode 81) as shown in FIG. 24 described above, the amount of light incident on the photoelectric conversion unit 2 can be secured and the decrease in detection sensitivity can be suppressed. Without being limited to this, various planar layouts such as those shown in FIGS. 21 to 30 described above may be adopted.

[0158] 43 and 44 are diagrams showing an example of a manufacturing method for the light detection device 10. As an example, a manufacturing process for obtaining a structure in which a metal light shielding portion 3 is provided on a sealing layer 4 is illustrated. As shown in FIG. 43, a material 3m of the light shielding portion 3 is laminated (for example, formed as a film) on the sealing layer 4, and a photoresist PR is formed thereon. The photoresist PR has the same layout pattern as the light shielding portion 3. Etching is performed in this state. As shown in FIG. 44, a portion of the material 3m that is not covered with the photoresist PR is removed, and the remaining portion is obtained as the light shielding portion 3. As shown in FIG. 44, a structure in which the light shielding portion 3 is provided on the sealing layer 4 is obtained. Note that, when a resin light shielding portion 3 is provided, a resin material may be used as the above-mentioned material 3m.

[0159] Fig. 45 is a diagram showing an example of an equivalent circuit of a pixel 12 including a metallic light-shielding portion 3. The illustrated equivalent circuit differs from Fig. 5 described above in that the light-shielding portion 3 is connected to a signal line that supplies a voltage VOU. This makes it possible to avoid, for example, electrical floating of the light-shielding portion 3 and stabilize the potential of the light-shielding portion 3. Description will be made with reference to Fig. 46 as well.

[0160] Fig. 46 is a diagram showing an example of a schematic configuration of the photodetection region 11. The layout of the metallic light-shielding portion 3 is shown typically. The light-shielding portion 3 is connected to wiring 11a provided on the outer periphery (e.g., of a chip) of the photodetection region 11. This wiring 11a corresponds to, for example, the signal line that supplies the voltage VOU in Fig. 45 described above.

[0161] 12. Application to electronic devices The light detection device 10 described above may be mounted on, for example, an electronic device for use. An electronic device including the light detection device 10 is referred to as an electronic device 100. The following description will be given with reference to FIG.

[0162] 47 is a diagram showing an example of a schematic configuration of the electronic device 100. The electronic device 100 includes the photodetector 10 described above and a peripheral element 101. The peripheral element 101 includes elements for providing various functions in the electronic device 100, such as a circuit, a mechanism, a processor, a storage device, an input / output device, and a communication device. The peripheral element 101 controls the photodetection by the photodetector 10, and also acquires and processes the photodetection results (data) obtained by the photodetector 10.

[0163] Examples of the electronic device 100 include, but are not limited to, a digital camera, a smartphone, an in-vehicle device, and the like. Any device capable of using the light detection device 10 may be used as the electronic device 100.

[0164] 13.Komusubi The techniques described above are specified, for example, as follows. One of the techniques disclosed is a photodetector 10. As described with reference to Figs. 1 to 46 and the like, the photodetector 10 includes a photoelectric conversion layer 6, an electrode layer 5 (upper electrode layer) provided above the photoelectric conversion layer 6 (on the positive Z-axis direction side), an electrode layer 8 (lower electrode layer) including a plurality of electrodes and provided below the photoelectric conversion layer 6, and a light-shielding portion 3 provided above (on the positive Z-axis direction side) at least a part of the photoelectric conversion layer 6. When viewed in a plan view (when viewed in the negative Z-axis direction), the light-shielding portion 3 includes an extension portion 3c that extends between a specific electrode and an adjacent electrode among the multiple electrodes of the electrode layer 8 in a direction intersecting the direction in which these electrodes face each other.

[0165] As described above, the photodetector 10 can suppress unintended transfer of charges generated in the photoelectric conversion layer 6. This makes it possible to suppress a decrease in the photodetection performance of the photodetector 10 that may occur due to such transfer.

[0166] As described with reference to Figures 2, 3, 21 to 24, 26 to 28, 30, etc., the photodetector 10 further includes a charge accumulation and transfer layer 7 provided between the photoelectric conversion layer 6 and the electrode layer 8 for accumulating and transferring charges generated in the photoelectric conversion layer 6, and the multiple electrodes include a readout electrode 81 for reading out charges accumulated in the charge accumulation and transfer layer 7 and a storage electrode 82 for accumulating charges generated in the photoelectric conversion layer 6 in the charge accumulation and transfer layer, and a specific electrode and its adjacent electrode may be the storage electrode 82 and the readout electrode 81. For example, in such a configuration, by covering at least a part of the outer circumferential region of the storage electrode 82 with a light-shielding portion 3, it is possible to suppress a decrease in photodetection performance.

[0167] As described with reference to FIG. 3, FIG. 21 to FIG. 24, FIG. 26 to FIG. 28, FIG. 30, etc., the light shielding portion 3 may include an extension portion 3a extending to surround the read electrode 81 in a plan view. The light shielding portion 3 may further include an extension portion 3b extending to cover the read electrode 81. The electrodes include a plurality of storage electrodes 82, and the light shielding portion 3 may include an extension portion 3c (or an extension portion 3a and an extension portion 3c) extending to surround each of the plurality of storage electrodes 82 in a plan view. The electrodes include a separation electrode 83 provided between adjacent storage electrodes 82 among the plurality of storage electrodes 82, and the light shielding portion 3 may include an extension portion 3c extending to cover at least a part of the separation electrode 83 in a plan view. For example, the light shielding portion 3 extending in this manner can cover at least a part of the outer circumferential region of the storage electrode 82.

[0168] 31 and 32, the multiple electrodes include multiple readout electrodes 81 for reading out charges accumulated in the photoelectric conversion layer 6, and a separation electrode 83 provided between adjacent readout electrodes 81 among the multiple readout electrodes 81, and a specific electrode and its adjacent electrode may be the separation electrode 83 and the readout electrode 81. In a plan view, the light-shielding portion 3 may extend so as to surround the readout electrode 81 and cover the separation electrode 83. Even in such a configuration, by covering at least a part of the outer circumferential region of the separation electrode 83 with the light-shielding portion 3, it is possible to suppress a decrease in light detection performance.

[0169] As described with reference to Figures 2, 12, 31, 34, 37, 38, 40, 42, etc., the light-shielding portion 3 may block light L1 (light in a first wavelength band) of the light L to be detected by the light detection device 10 and pass light L2 (light in a second wavelength band). One of the light L1 and the light L2 may include visible light, and the other may include infrared light. This makes it possible to suppress a decrease in the detection performance of the light L1, more specifically, the detection performance of, for example, visible light or infrared light.

[0170] 38 and 40 (in the case of FIG. 40, in each of the pixels 12R and 12B), both the light L1 and the light L2 may include visible light, the light L1 may include one or more of the green light LG, the blue light LB, and the red light LR, and the light L2 may include the remaining light. This makes it possible to suppress a decrease in the detection performance of one or more of the visible light, the green light LG, the blue light LB, and the red light LR.

[0171] 2, 31, 34, 37, 38, 40, 42, etc., the photodetector 10 includes a photoelectric conversion unit 1 (first photoelectric conversion unit) including a photoelectric conversion layer 6, an electrode layer 5, and an electrode layer 8, and a photoelectric conversion unit 2 (second photoelectric conversion unit) provided below the photoelectric conversion unit 1, and the photoelectric conversion unit 2 may generate charges according to the amount of light L2. This makes it possible to detect both light L1 and light L2 using the photoelectric conversion unit 1 and the photoelectric conversion unit 2.

[0172] 42 and the like, light L1 includes two of the green light LG, blue light LB, and red light LR, and light L2 includes the remaining one light, and the light detection device 10 may include two photoelectric conversion units 1 (photoelectric conversion unit 1-1 and photoelectric conversion unit 1-2) corresponding to the two lights included in light L1, and two light shielding units 3 (light shielding unit 3-1 and light shielding unit 3-2) corresponding to the two photoelectric conversion units 1. Even when the photoelectric conversion units 1 have a two-layer structure in this way, by providing the light shielding units 3 corresponding to each of them, it is possible to suppress a decrease in the light detection performance.

[0173] 2 and 4, the material of the light shielding portion 3 may include an organic material, and may also include an inorganic material (e.g., amorphous Si, SiO2). For example, by using such a material, it is possible to impart wavelength selectivity to the light shielding portion 3. For example, by the light shielding portion 3 blocking light L1 while passing light L2, it becomes easier to ensure the amount of light L2 incident on the photoelectric conversion portion 2.

[0174] 12 and the like, the light shielding portion 3 may be a waveguide that guides the light L1 of the light L away from the peripheral region of the specific electrode. Such a light shielding portion 3 can also suppress the incidence of the light L1 into the peripheral region of the specific electrode, and therefore suppress the deterioration of the light detection performance.

[0175] 43 to 46, the material of the light-shielding portion 3 may include at least one of a metal material and a resin material. Such a light-shielding portion 3 can also suppress a decrease in the light detection performance.

[0176] 2 and 6 to 13, the light-shielding portion 3 may be provided in the sealing layer 4 provided so as to cover the photoelectric conversion layer 6, on the sealing layer 4, in the electrode layer 5, in the photoelectric conversion layer 6, or in the color filter layer 9 provided so as to cover the photoelectric conversion layer 6. For example, the light-shielding portion 3 can be provided in various locations such as these.

[0177] The electronic device 100 described with reference to Fig. 47 etc. is also one of the disclosed techniques. The electronic device 100 includes a light detection device 10. This makes it possible to obtain the electronic device 100 in which a decrease in light detection sensitivity is suppressed.

[0178] 14. Other configuration examples of photodetection device Some examples of other configurations of the photodetection device 10 described above will be described with reference to Fig. 48 to Fig. 65. Hereinafter, the photodetection region 11 and the pixels 12 are also referred to as pixel portions A100A and pixels P. The portion that detects light in the photodetection region 11 is also referred to as image sensor A1A.

[0179] (Configuration of image sensor) Fig. 48 is a schematic diagram showing an example of a cross-sectional configuration of an image sensor A1A. Fig. 49 is a schematic diagram showing an example of a planar configuration of the image sensor A1A shown in Fig. 48, and Fig. 48 shows a cross section taken along line II shown in Fig. 49. The image sensor A1A constitutes, for example, one pixel P (unit pixel) in the pixel section A100A. In the pixel section A100A, as shown in Fig. 49, a pixel unit A1a consisting of, for example, four pixels P arranged in two rows and two columns is a repeating unit, and is repeatedly arranged in an array in the row and column directions.

[0180] The image sensor A1A is a so-called vertical spectroscopic type in which one photoelectric conversion unit formed, for example, using an organic material and two photoelectric conversion units (photoelectric conversion regions A32B, A32R) made, for example, of inorganic materials are stacked vertically, and selectively detect light in different wavelength ranges and perform photoelectric conversion. For example, the former photoelectric conversion unit corresponds to the photoelectric conversion unit 1 described above, and is referred to as photoelectric conversion unit A10 and illustrated. The latter two photoelectric conversion units correspond to the photoelectric conversion unit 2 described above, and are referred to as photoelectric conversion regions A32B, A32R and illustrated.

[0181] In the image sensor A1A, the photoelectric conversion unit A10 is provided on the back surface (first surface A30S1) side of the semiconductor substrate A30. The photoelectric conversion regions A32B and A32R are embedded in the semiconductor substrate A30 and are stacked in the thickness direction of the semiconductor substrate A30.

[0182] The photoelectric conversion unit A10 and the photoelectric conversion regions A32B and A32R selectively detect light in different wavelength ranges and perform photoelectric conversion. For example, the photoelectric conversion unit A10 acquires a green (G) color signal. The photoelectric conversion regions A32B and A32R acquire blue (B) and red (R) color signals, respectively, due to differences in absorption coefficients. This makes it possible for the image sensor A1A to acquire multiple types of color signals in one pixel without using a color filter.

[0183] In the image sensor A1A, the electrons of the electron-hole pairs generated by photoelectric conversion are read out as signal charges. In the figure, the "+" next to "p" and "n" indicates that the p-type or n-type impurity concentration is high.

[0184] The semiconductor substrate A30 is, for example, made of an n-type silicon (Si) substrate, and has a p-well A31 in a predetermined region. On the second surface A30S2 (surface of the semiconductor substrate A30) of the p-well A31, for example, various floating diffusions AFD (for example, AFD1, AFD2, AFD3) and various transistors Tr (for example, a vertical transistor (transfer transistor) Tr2, a transfer transistor Tr3, an amplifier transistor (modulation element) AMP, and a reset transistor RST) are provided. On the second surface A30S2 of the semiconductor substrate A30, a multilayer wiring layer A40 is further provided via a gate insulating layer A33. The multilayer wiring layer A40 has, for example, a configuration in which wiring layers A41, A42, and A43 are stacked in an insulating layer A44. In addition, a peripheral circuit (not shown) consisting of a logic circuit or the like is provided on the periphery of the semiconductor substrate A30.

[0185] A protective layer A51 is provided above the photoelectric conversion unit A10. In the protective layer A51, for example, a light-shielding film A53 and wiring that electrically connects the upper electrode A16 and the peripheral circuit unit around the pixel unit A100A are provided. Optical members such as a planarization layer (not shown) and an on-chip lens A52L are further provided above the protective layer A51.

[0186] Instead of or together with the light-shielding film A53, the light-shielding portion 3 described above may be provided. The arrangement, configuration, and technical significance of the light-shielding portion 3 are as already described.

[0187] In FIG. 48, the first surface A30S1 side of the semiconductor substrate A30 is represented as a light incident surface AS1, and the second surface A30S2 side is represented as a wiring layer side AS2.

[0188] The structure and materials of each part will be described in detail below.

[0189] In the photoelectric conversion unit A10, a hole blocking layer A12 (first layer A12A and second layer A12B), a photoelectric conversion layer A13, an electron blocking layer A14, and a work function adjustment layer A15 are laminated in this order between a lower electrode A11 and an upper electrode A16 arranged opposite to each other. In the imaging element A1A, the lower electrode A11 is made up of a plurality of electrodes (for example, two electrodes, a readout electrode A11A and a storage electrode A11B), and for example, an insulating layer A17 and a semiconductor layer A18 are laminated in this order between the lower electrode A11 and the hole blocking layer A12. Of the lower electrode A11, the readout electrode A11A is electrically connected to the semiconductor layer A18 via an opening A17H provided in the insulating layer A17.

[0190] For example, the electrode layer 8 and the electrode layer 5 previously described with reference to FIG. 2 etc. may correspond to the lower electrode A11 and the upper electrode A16. The photoelectric conversion layer 6 and the charge storage and transfer layer 7 may correspond to the photoelectric conversion layer A13 and the semiconductor layer A18. The insulator 80, the readout electrode 81 and the storage electrode 82 may correspond to the insulating layer A17, the readout electrode A11A and the storage electrode A11B. The separation electrode 83 may correspond to the shield electrode A28 described later. The sealing layer 4 may correspond to the protective layer A51.

[0191] The readout electrode A11A is for transferring the charge generated in the photoelectric conversion layer A13 to the floating diffusion AFD1, and is connected to the floating diffusion AFD1 via, for example, the upper second contact A24B, the pad portion A39B, the upper first contact A29A, the pad portion A39A, the through electrode A34, the connection portion A41A, and the lower second contact A46. The storage electrode A11B is for storing electrons as signal charges in the semiconductor layer A18 among the charges generated in the photoelectric conversion layer A13. The storage electrode A11B is provided in a region covering the light receiving surfaces of the photoelectric conversion regions A32B and A32R formed in the semiconductor substrate A30, facing directly against these light receiving surfaces. The storage electrode A11B is preferably larger than the readout electrode A11A, and thus can store a large amount of charge. As shown in FIG. 51, the storage electrode A11B is connected to a voltage application unit A54 via wiring such as an upper third contact A24C and a pad unit A39C.

[0192] The insulating layer A17 serves to electrically separate the storage electrode A11B from the semiconductor layer A18. The insulating layer A17 is provided, for example, on the interlayer insulating layer A23 so as to cover the lower electrode A11. The insulating layer A17 is, for example, a single layer film made of one of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), etc., or a laminated film made of two or more of these. The thickness of the insulating layer A17 is, for example, 20 nm or more and 500 nm or less.

[0193] The semiconductor layer A18 is for accumulating signal charges generated in the photoelectric conversion layer A13. The semiconductor layer A18 is preferably formed using a material having a higher charge mobility and a larger band gap than the photoelectric conversion layer A13. For example, the band gap of the material constituting the semiconductor layer A18 is preferably 3.0 eV or more. Examples of such materials include oxide semiconductors such as IGZO and organic semiconductors. Examples of organic semiconductors include transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, and condensed heterocyclic compounds. The thickness of the semiconductor layer A18 is, for example, 10 nm or more and 300 nm or less. By providing the semiconductor layer A18 made of the above material between the lower electrode A11 and the photoelectric conversion layer A13, it is possible to prevent recombination of charges during charge accumulation and improve transfer efficiency.

[0194] 48 shows an example in which the semiconductor layer A18, the hole blocking layer A12 (first layer A12A and second layer A12B), the photoelectric conversion layer A13, the electron blocking layer A14, the work function adjustment layer A15, and the upper electrode A16 are provided as a continuous layer common to a plurality of pixels (unit pixels P), but is not limited thereto. The semiconductor layer A18, the hole blocking layer A12, the photoelectric conversion layer A13, the electron blocking layer A14, the work function adjustment layer A15, and the upper electrode A16 may be formed separately for each unit pixel P, for example.

[0195] Between the semiconductor substrate A30 and the lower electrode A11, for example, a layer having a fixed charge (fixed charge layer) A21, a dielectric layer A22 having insulating properties, and an interlayer insulating layer A23 are provided in this order from the first surface A30S1 side of the semiconductor substrate A30.

[0196] The fixed charge layer A21 may be a film having a positive fixed charge or a film having a negative fixed charge. The fixed charge layer A21 is preferably formed using a semiconductor or conductive material having a wider band gap than the semiconductor substrate A30. This makes it possible to suppress the generation of dark current at the interface of the semiconductor substrate A30. The fixed charge layer A21 may be formed using, for example, hafnium oxide (HfO x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), tantalum oxide (TaO x ), titanium dioxide (TiO x ), lanthanum oxide (LaO x ), praseodymium oxide (PrO x ), cerium oxide (CeO x ), neodymium oxide (NdO x ), promethium oxide (PmO x ), samarium oxide (SmO x ), europium oxide (EuO x ), gadolinium oxide (GdO x ), terbium oxide (TbO x ), dysprosium oxide (DyO x ), Holmium oxide (HoO x ), thulium oxide (TmO x ), ytterbium oxide (YbO x ), lutetium oxide (LuO x ), yttrium oxide (YO x ), hafnium nitride (HfN x ), Aluminum Nitride (AlN x ), hafnium oxynitride (HfO x Ny and aluminum oxynitride (AlO x N y ) etc.

[0197] The dielectric layer A22 is intended to prevent light reflection caused by the difference in refractive index between the semiconductor substrate A30 and the interlayer insulating layer A23. The constituent material of the dielectric layer A22 is preferably a material having a refractive index between the refractive index of the semiconductor substrate A30 and the refractive index of the interlayer insulating layer A23. The constituent material of the dielectric layer A22 is, for example, SiO x , TEOS, SiN x and SiO x N y etc.

[0198] The interlayer insulating layer A23 is, for example, SiO x , SiN x and SiO x N y It is composed of a single layer film made of one of the above, or a laminated film made of two or more of these.

[0199] A shield electrode A28 is provided on the interlayer insulating layer A23 together with the lower electrode A11. The shield electrode A28 is provided to prevent capacitive coupling between adjacent pixel units A1a, and is provided around the pixel unit A1a, which is composed of, for example, four pixels P arranged in two rows and two columns, and a fixed potential is applied to the shield electrode A28. The shield electrode A28 further extends between adjacent pixels in the row and column directions within the pixel unit A1a.

[0200] The photoelectric conversion regions A32B and A32R are formed of, for example, PIN (Positive Intrinsic Negative) type photodiodes, and each has a pn junction in a predetermined region of the semiconductor substrate A30. The photoelectric conversion regions A32B and A32R are capable of splitting light in the vertical direction by utilizing the fact that the wavelength range absorbed varies depending on the depth of incidence of light in a silicon substrate.

[0201] The photoelectric conversion region A32B selectively detects blue light and accumulates signal charges corresponding to blue, and is formed at a depth that allows efficient photoelectric conversion of blue light. The photoelectric conversion region A32R selectively detects red light and accumulates signal charges corresponding to red, and is formed at a depth that allows efficient photoelectric conversion of red light. Note that blue (B) is a color that corresponds to, for example, a wavelength range of 400 nm or more and less than 495 nm, and red (R) is a color that corresponds to, for example, a wavelength range of 620 nm or more and less than 750 nm. Each of the photoelectric conversion regions A32B and A32R may be capable of detecting light in a part or all of the wavelength ranges.

[0202] Specifically, as shown in FIG. 48, the photoelectric conversion region A32B and the photoelectric conversion region A32R each have, for example, a p+ region that serves as a hole accumulation layer and an n region that serves as an electron accumulation layer (having a pnp stack structure). The n region of the photoelectric conversion region A32B is connected to the vertical transistor Tr2. The p+ region of the photoelectric conversion region A32B is bent along the vertical transistor Tr2 and connected to the p+ region of the photoelectric conversion region A32R.

[0203] The gate insulating layer A33 is, for example, SiO x , SiN x and SiO x N y It is composed of a single layer film made of one of the above, or a laminated film made of two or more of these.

[0204] Between the first surface A30S1 and the second surface A30S2 of the semiconductor substrate A30, a through electrode A34 is provided. The through electrode A34 functions as a connector between the photoelectric conversion unit A10 and the gate Gamp of the amplifier transistor AMP and the floating diffusion AFD1, and also serves as a transmission path for charges generated in the photoelectric conversion unit A10. A reset gate Grst of the reset transistor RST is disposed next to the floating diffusion AFD1 (one of the source / drain regions A36B of the reset transistor RST). This makes it possible to reset the charges accumulated in the floating diffusion AFD1 by the reset transistor RST.

[0205] The upper end of the through electrode A34 is connected to the read electrode A11A via, for example, a pad portion A39A, an upper first contact A24A, a pad electrode A38B, and an upper second contact A24B provided in the interlayer insulating layer A23. The lower end of the through electrode A34 is connected to a connection portion A41A in the wiring layer A41, and the connection portion A41A and the gate Gamp of the amplifier transistor AMP are connected via a lower first contact A45. The connection portion A41A and the floating diffusion AFD1 (region A36B) are connected via, for example, a lower second contact A46.

[0206] The upper first contact A24A, the upper second contact A24B, the upper third contact A24C, the pad portions A39A, A39B, A39C, the wiring layers A41, A42, A43, the lower first contact A45, the lower second contact A46 and the gate wiring layer A47 can be formed using, for example, a doped silicon material such as PDAS (Phosphorus Doped Amorphous Silicon), or a metal material such as Al, W, Ti, Co, Hf and Ta.

[0207] The insulating layer A44 is, for example, SiO x , SiN x and SiO x N yIt is composed of a single layer film made of one of the above, or a laminated film made of two or more of these.

[0208] The protective layer A51 and the on-chip lens A52L are made of a light-transmitting material, such as SiO x , SiN x and SiO x N y The protective layer A51 is configured as a single layer film made of one of the above, or a laminated film made of two or more of the above. The thickness of the protective layer A51 is, for example, 100 nm to 30,000 nm.

[0209] The light-shielding film A53 is provided, for example, so as to cover at least the region of the readout electrode A21A that is in direct contact with the semiconductor layer A18, without covering the storage electrode A11B. This is not limiting, and various arrangements may be adopted, as with the light-shielding portion 3 described above. The light-shielding film A53 can be formed, for example, using W, Al, an alloy of Al and Cu, or the like.

[0210] Fig. 50 is an equivalent circuit diagram of the image sensor A1A shown in Fig. 48. Fig. 51 shows a schematic diagram of the arrangement of transistors constituting the lower electrode A11 and control unit of the image sensor 1A shown in Fig. 48.

[0211] The reset transistor RST (reset transistor TR1rst) is for resetting the charge transferred from the photoelectric conversion unit A10 to the floating diffusion AFD1, and is composed of, for example, a MOS transistor. Specifically, the reset transistor TR1rst is composed of a reset gate Grst, a channel formation region A36A, and source / drain regions A36B, A36C. The reset gate Grst is connected to a reset line RST1, and one source / drain region A36B of the reset transistor TR1rst also serves as the floating diffusion AFD1. The other source / drain region A36C constituting the reset transistor TR1rst is connected to a power supply line VDD is connected to

[0212] The amplifier transistor AMP is a modulation element that modulates the amount of charge generated in the photoelectric conversion unit A10 into a voltage, and is configured, for example, by a MOS transistor. Specifically, the amplifier transistor AMP is configured by a gate Gamp, a channel formation region A35A, and source / drain regions A35B, A35C. The gate Gamp is connected to the readout electrode A11A and one of the source / drain regions A36B (floating diffusion AFD1) of the reset transistor TR1rst via the lower first contact A45, the connection portion A41A, the lower second contact A46, the through electrode A34, etc. In addition, one of the source / drain regions A35B shares an area with the other source / drain region A36C constituting the reset transistor TR1rst, and is connected to the power supply line VDD is connected to

[0213] The selection transistor SEL (selection transistor TR1sel) is composed of a gate Gsel, a channel formation region A34A, and source / drain regions A34B and A34C. The gate Gsel is connected to a selection line SEL1. One source / drain region A34B shares an area with the other source / drain region A35C constituting the amplifier transistor AMP, and the other source / drain region A34C is connected to a signal line (data output line) VSL1.

[0214] The transfer transistor TR2 (transfer transistor TR2trs) is for transferring the signal charge corresponding to blue, which is generated and accumulated in the photoelectric conversion region A32B, to the floating diffusion AFD2. Since the photoelectric conversion region A32B is formed at a deep position from the second surface A30S2 of the semiconductor substrate A30, it is preferable that the transfer transistor TR2trs in the photoelectric conversion region A32B is composed of a vertical transistor. The transfer transistor TR2trs is connected to a transfer gate line TG2. A floating diffusion AFD2 is provided in the region A37C near the gate Gtrs2 of the transfer transistor TR2trs. The charge accumulated in the photoelectric conversion region A32B is read out to the floating diffusion AFD2 via a transfer channel formed along the gate Gtrs2.

[0215] The transfer transistor TR3 (transfer transistor TR3trs) is for transferring the signal charge corresponding to red generated and accumulated in the photoelectric conversion region A32R to the floating diffusion AFD3, and is composed of, for example, a MOS transistor. The transfer transistor TR3trs is connected to a transfer gate line TG3. A floating diffusion AFD3 is provided in the region A38C near the gate Gtrs3 of the transfer transistor TR3trs. The charge accumulated in the photoelectric conversion region A32R is read out to the floating diffusion AFD3 via a transfer channel formed along the gate Gtrs3.

[0216] Further provided on the second surface A30S2 side of the semiconductor substrate A30 are a reset transistor TR2rst, an amplifier transistor TR2amp, and a selection transistor TR2sel constituting a control section of the photoelectric conversion region A32B, and a reset transistor TR3rst, an amplifier transistor TR3amp, and a selection transistor TR3sel constituting a control section of the photoelectric conversion region A32R.

[0217] The reset transistor TR2rst is composed of a gate, a channel forming region, and a source / drain region. The gate of the reset transistor TR2rst is connected to the reset line RST2, and one of the source / drain regions of the reset transistor TR2rst is connected to the power supply line VDD The other source / drain region of the reset transistor TR2rst also serves as a floating diffusion AFD2.

[0218] The amplifier transistor TR2amp is composed of a gate, a channel forming region, and a source / drain region. The gate is connected to the other source / drain region (floating diffusion AFD2) of the reset transistor TR2rst. One of the source / drain regions constituting the amplifier transistor TR2amp shares an area with one of the source / drain regions constituting the reset transistor TR2rst, and is connected to the power supply line VDD is connected to

[0219] The selection transistor TR2sel is composed of a gate, a channel formation region, and a source / drain region. The gate is connected to a selection line SEL2. One of the source / drain regions constituting the selection transistor TR2sel shares the region with the other of the source / drain regions constituting the amplifier transistor TR2amp. The other of the source / drain regions constituting the selection transistor TR2sel is connected to a signal line (data output line) VSL2.

[0220] The reset transistor TR3rst is composed of a gate, a channel forming region, and a source / drain region. The gate of the reset transistor TR3rst is connected to a reset line RST3, and one of the source / drain regions constituting the reset transistor TR3rst is connected to a power supply line VDD The other source / drain region constituting the reset transistor TR3rst also serves as the floating diffusion AFD3.

[0221] The amplifier transistor TR3amp is composed of a gate, a channel forming region, and a source / drain region. The gate is connected to the other source / drain region (floating diffusion AFD3) constituting the reset transistor TR3rst. One of the source / drain regions constituting the amplifier transistor TR3amp shares an area with one of the source / drain regions constituting the reset transistor TR3rst, and is connected to the power supply line VDD is connected to

[0222] The selection transistor TR3sel is composed of a gate, a channel formation region, and a source / drain region. The gate is connected to a selection line SEL3. One of the source / drain regions constituting the selection transistor TR3sel shares the same region with the other of the source / drain regions constituting the amplifier transistor TR3amp. The other of the source / drain regions constituting the selection transistor TR3sel is connected to a signal line (data output line) VSL3.

[0223] The reset lines RST1, RST2, and RST3, the selection lines SEL1, SEL2, and SEL3, and the transfer gate lines TG2 and TG3 are connected to the vertical drive circuits that constitute the drive circuits. The signal lines (data output lines) VSL1, VSL2, and VSL3 are connected to the column signal processing circuits that constitute the drive circuits. For example, the vertical drive circuit 14 and the column signal processing circuit 15 described above with reference to FIG. 1 correspond to the drive circuit and the column signal processing circuit.

[0224] (Method of manufacturing an image sensor) The above-mentioned image sensor A1A can be manufactured, for example, as follows.

[0225] 52 to 57 show the manufacturing method of the image sensor A1A in the order of steps. First, as shown in Fig. 52, for example, a p-well A31 is formed in a semiconductor substrate A30, and for example, n-type photoelectric conversion regions A32B, A32R are formed in this p-well A31. A p+ region is formed in the vicinity of the first surface A30S1 of the semiconductor substrate A30.

[0226] On the second surface A30S2 of the semiconductor substrate A30, as shown in FIG. 52, n+ regions that become floating diffusions AFD1 to AFD3 are formed, and then a gate insulating layer A33 and a gate wiring layer A47 including the gates of the transfer transistor Tr2, the transfer transistor Tr3, the selection transistor SEL, the amplifier transistor AMP, and the reset transistor RST are formed. This forms the transfer transistor Tr2, the transfer transistor Tr3, the selection transistor SEL, the amplifier transistor AMP, and the reset transistor RST. Furthermore, a multilayer wiring layer A40 consisting of wiring layers A41 to A43 including the lower first contact A45, the lower second contact A46, and the connection portion A41A and an insulating layer A44 is formed on the second surface A30S2 of the semiconductor substrate A30.

[0227] The base of the semiconductor substrate A30 is, for example, an SOI (Silicon on Insulator) substrate in which the semiconductor substrate A30, a buried oxide film (not shown), and a holding substrate (not shown) are laminated. The buried oxide film and the holding substrate are bonded to the first surface A30S1 of the semiconductor substrate A30, although they are not shown in FIG. 52. After the ion implantation, an annealing process is performed.

[0228] Next, a support substrate (not shown) or another semiconductor base is bonded onto the multi-layer wiring layer A40 provided on the second surface A30S2 side of the semiconductor substrate A30, and then the substrate is turned upside down. Next, the semiconductor substrate A30 is separated from the buried oxide film of the SOI substrate and the holding substrate, and the first surface A30S1 of the semiconductor substrate A30 is exposed. The above steps can be performed by techniques used in normal CMOS processes, such as ion implantation and CVD (Chemical Vapor Deposition).

[0229] Next, as shown in Fig. 53, the semiconductor substrate A30 is processed from the first surface A30S1 side by, for example, dry etching to form, for example, a ring-shaped opening A34H. As shown in Fig. 53, the depth of the opening A34H penetrates from the first surface A30S1 to the second surface A30S2 of the semiconductor substrate A30 and reaches, for example, the connection portion A41A.

[0230] Next, for example, a negative fixed charge layer A21 and a dielectric layer A22 are formed in this order on the first surface A30S1 of the semiconductor substrate A30 and the side surface of the opening A34H. The fixed charge layer A21 is, for example, a HfO x The dielectric layer A22 can be formed by depositing a SiO x The insulating layer A23 can be formed by depositing a film. Next, a pad portion A39A is formed at a predetermined position on the dielectric layer A22, in which a barrier metal made of a laminated film of titanium and titanium nitride (Ti / TiN film) and a W film are laminated. Thereafter, an interlayer insulating layer A23 is formed on the dielectric layer A22 and the pad portion A39A, and the surface of the interlayer insulating layer A23 is planarized by using a chemical mechanical polishing (CMP) method.

[0231] 54, an opening A23H1 is formed on the pad portion A39A, and then a conductive material such as Al is filled into this opening A23H1 to form the upper first contact A24A. Next, as shown in FIG. 54, in the same manner as the pad portion A39A, the pad portions A39B and A39C are formed, and then the interlayer insulating layer A23, the upper second contact A24B, and the upper third contact A24C are formed in this order.

[0232] 55, a conductive film 11X is formed on the interlayer insulating layer A23 by, for example, a sputtering method, and then patterned by a photolithography technique. Specifically, a photoresist PR is formed at a predetermined position of the conductive film 11X, and then the conductive film 11X is processed by dry etching or wet etching. The photoresist PR is then removed to form the read electrode A11A and the storage electrode A11B as shown in FIG.

[0233] Next, as shown in FIG. 57, the insulating layer A17, the semiconductor layer A18, the hole blocking layer A12 (first layer A12A and second layer A12B), the photoelectric conversion layer A13, the electron blocking layer A14, the work function adjustment layer A15, and the upper electrode A16 are sequentially formed. The insulating layer A17 is formed by, for example, forming a SiOx film using the ALD method, and then planarizing the surface of the insulating layer A17 using the CMP method. Thereafter, an opening A17H is formed on the readout electrode A11A using, for example, wet etching. The semiconductor layer A18 can be formed by, for example, a sputtering method. The hole blocking layer A12 (first layer A12A and second layer A12B), the photoelectric conversion layer A13, the electron blocking layer A14, and the work function adjustment layer A15 are formed by, for example, a vacuum deposition method. The upper electrode A16 is formed by, for example, a sputtering method, similar to the lower electrode A11. Finally, the protective layer A51, the light-shielding film A53, and the on-chip lens A52L are disposed on the upper electrode A16. Through the above steps, the image sensor A1A shown in FIG.

[0234] It is preferable that each of the hole blocking layer A12 (first layer A12A and second layer A12B), photoelectric conversion layer A13, electron blocking layer A14, and work function adjustment layer A15 is formed continuously in a vacuum process (through a vacuum process). Organic layers such as the hole blocking layer A12 (first layer A12A and second layer A12B), photoelectric conversion layer A13, electron blocking layer A14, and work function adjustment layer A15, and conductive films such as the lower electrode A11 and upper electrode A16 can be formed using a dry film formation method or a wet film formation method. Examples of dry film formation methods include vacuum deposition using resistance heating or high-frequency heating, electron beam (EB) deposition, various sputtering methods (magnetron sputtering, RF-DC coupled bias sputtering, ECR sputtering, facing target sputtering, high-frequency sputtering), ion plating, laser ablation, molecular beam epitaxy, and laser transfer. Other examples of dry film formation methods include chemical vapor deposition methods such as plasma CVD, thermal CVD, MOCVD, and photo-CVD. Examples of wet film formation methods include spin coating, inkjet, spray coating, stamping, microcontact printing, flexographic printing, offset printing, gravure printing, and dip printing.

[0235] For patterning, in addition to photolithography, chemical etching such as shadow mask and laser transfer, physical etching using ultraviolet light or laser, etc. can be used. For planarization, in addition to CMP, laser planarization and reflow methods can be used.

[0236] (Signal acquisition operation of the imaging element) In the image sensor A1A, when light is incident on the photoelectric conversion unit A10 via the on-chip lens A52L, the light passes through the photoelectric conversion unit A10, the photoelectric conversion region A32B, and the photoelectric conversion region A32R in that order, and is photoelectrically converted into green, blue, and red light during the passing process. The operation of acquiring the signal for each color will be described below.

[0237] (Acquisition of green signal by photoelectric conversion unit A10) Of the light incident on the image sensor A1A, green light (G) is first selectively detected (absorbed) and photoelectrically converted by the photoelectric conversion unit A10.

[0238] The photoelectric conversion unit A10 is connected to the gate Gamp of the amplifier transistor AMP and the floating diffusion AFD1 via the through electrode A34. Therefore, electrons of the excitons generated in the photoelectric conversion unit A10 are extracted from the lower electrode A11 side, transferred to the second surface A30S2 side of the semiconductor substrate A30 via the through electrode A34, and stored in the floating diffusion AFD1. At the same time, the amount of charge generated in the photoelectric conversion unit A10 is modulated into a voltage by the amplifier transistor AMP.

[0239] In addition, a reset gate Grst of the reset transistor RST is disposed next to the floating diffusion AFD1, so that the charge accumulated in the floating diffusion AFD1 is reset by the reset transistor RST.

[0240] Since the photoelectric conversion unit A10 is connected not only to the amplifier transistor AMP but also to the floating diffusion AFD1 via the through electrode A34, the charge accumulated in the floating diffusion AFD1 can be easily reset by the reset transistor RST.

[0241] On the other hand, if the through electrode A34 and the floating diffusion AFD1 are not connected, it becomes difficult to reset the charge accumulated in the floating diffusion AFD1, and a large voltage is applied to pull it out to the upper electrode A16 side. This may damage the photoelectric conversion layer A24. In addition, a structure that allows resetting in a short time leads to an increase in dark noise, which is a trade-off, making this structure difficult to implement.

[0242] 58 shows an example of the operation of the image sensor A1A. (A) shows the potential at the storage electrode A11B, (B) shows the potential at the floating diffusion AFD1 (readout electrode A11A), and (C) shows the potential at the gate (Gsel) of the reset transistor TR1rst. In the image sensor A1A, voltages are applied to the readout electrode A11A and the storage electrode A11B individually.

[0243] In the image sensor A1A, during the accumulation period, a potential V1 is applied from the drive circuit to the readout electrode A11A, and a potential V2 is applied to the storage electrode A11B. Here, the potentials V1 and V2 are set to V2>V1. As a result, the charge (signal charge; electrons) generated by photoelectric conversion is attracted to the storage electrode A11B and accumulated in the region of the semiconductor layer A18 facing the storage electrode A11B (accumulation period). Incidentally, the potential of the region of the semiconductor layer A18 facing the storage electrode A11B becomes more negative as the time of photoelectric conversion passes. Incidentally, the holes are sent from the upper electrode A16 to the drive circuit.

[0244] In the image sensor A1A, a reset operation is performed in the latter half of the accumulation period. Specifically, at timing t1, the scanning unit changes the voltage of the reset signal RST from low level to high level. As a result, in the unit pixel P, the reset transistor TR1rst is turned on, and as a result, the voltage of the floating diffusion FD1 is set to the power supply voltage, and the voltage of the floating diffusion AFD1 is reset (reset period).

[0245] After the reset operation is completed, the charge is read out. Specifically, at timing t2, the drive circuit applies a potential V3 to the readout electrode A11A, and a potential V4 to the storage electrode A11B. Here, the potentials V3 and V4 are set to V3>V4. As a result, the charge stored in the region corresponding to the storage electrode A11B is read out from the readout electrode A11A to the floating diffusion AFD1. That is, the charge stored in the semiconductor layer A18 is read out to the control unit (transfer period).

[0246] After the read operation is completed, the drive circuit again applies a potential V1 to the read electrode A11A and a potential V2 to the storage electrode A11B. As a result, the charge generated by photoelectric conversion is attracted to the storage electrode A11B and stored in the region of the photoelectric conversion layer A24 facing the storage electrode A11B (storage period).

[0247] (Obtaining blue and red signals using photoelectric conversion areas A32B and A32R) Next, of the light transmitted through the photoelectric conversion unit A10, blue light (B) is absorbed in the photoelectric conversion region A32B, and red light (R) is absorbed in the photoelectric conversion region A32R, and photoelectrically converted. In the photoelectric conversion region A32B, electrons corresponding to the incident blue light (B) are accumulated in the n region of the photoelectric conversion region A32B, and the accumulated electrons are transferred to the floating diffusion AFD2 by the transfer transistor Tr2. Similarly, in the photoelectric conversion region A32R, electrons corresponding to the incident red light (R) are accumulated in the n region of the photoelectric conversion region A32R, and the accumulated electrons are transferred to the floating diffusion AFD3 by the transfer transistor Tr3.

[0248] (Action and effect) Even in the above-mentioned configuration, by providing the light-shielding portion 3 described above, it is possible to suppress the deterioration of the light detection performance.

[0249] In one embodiment, a hole blocking layer A12 may be provided between the lower electrode A11 and the photoelectric conversion layer A13. The hole blocking layer A12 includes a first layer A12A containing an organic material having a HOMO level 1 eV or more deeper than the work function of the lower electrode A11 and a LUMO level 3.7 eV to 4.8 eV, and a second layer A12B containing a fullerene or a fullerene derivative. This reduces the electron barrier at the interface with the lower electrode A11 while suppressing the injection of holes from the lower electrode A11. In addition, the generation of dark current at the interface with the photoelectric conversion layer A13 is suppressed while reducing the generation of interface traps with the photoelectric conversion layer A13. This will be described below.

[0250] In CMOS image sensors used in electronic devices such as digital still cameras and video cameras, photoelectric conversion elements used as imaging elements constituting each pixel are required to have a good S / N ratio between photocurrent and dark current and a high response speed. For example, in the above-mentioned photoelectric conversion element, a hole blocking layer containing fullerene and / or a fullerene derivative and a transparent hole transport material with an ionization potential of 5.5 eV or more is provided between the photoelectric conversion layer and the electrode, thereby improving the sensitivity, S / N ratio and response speed.

[0251] However, it is difficult to say that the above photoelectric conversion element has sufficient characteristics in terms of dark current, external quantum efficiency, and afterimage characteristics. This is presumably because, although the efficiency of extracting electrons and the reduction of traps at the interface between the photoelectric conversion layer and the hole blocking layer have been improved, the inhibition of hole injection from the electrode and the barrier at the interface between the electrode and the hole blocking layer have not been taken into consideration.

[0252] In contrast, in the above-mentioned photoelectric conversion unit A10, the hole blocking layer A12 has a laminated structure of a first layer A12A and a second layer A12B, and the first layer A12A containing an organic material having a HOMO level 1 eV or more deeper than the work function of the lower electrode A11 and a LUMO level of 3.7 eV to 4.8 eV is arranged on the lower electrode A11 side, and the second layer A12B containing a fullerene or a fullerene derivative is arranged on the photoelectric conversion layer A13 side. This reduces the electron barrier at the interface with the lower electrode A11 while suppressing the injection of holes from the lower electrode A11. In addition, the generation of dark current at the interface with the photoelectric conversion layer A13 is suppressed while reducing the generation of interface traps with the photoelectric conversion layer.

[0253] As a result, the photoelectric conversion unit A10 can have improved characteristics as a photoelectric conversion element.

[0254] For example, in the photoelectric conversion unit A10, the injection of holes from the lower electrode A11 is suppressed, and the outflow of charges at the interface between the hole blocking layer A12 and the photoelectric conversion layer is reduced, so that the dark current can be reduced. In addition, in the photoelectric conversion unit A10, the electron barrier at the interface between the lower electrode A11 and the hole blocking layer A12 and the interface between the photoelectric conversion layer A13 and the hole blocking layer A12 is reduced, so that the electron extraction efficiency, i.e., the external quantum efficiency, can be improved. Furthermore, in the photoelectric conversion unit A10, the generation of traps at the interface between the hole blocking layer A12 and the photoelectric conversion layer A13 is reduced, so that the photoresponsiveness can be improved.

[0255] Next, several modifications of the above-mentioned photoelectric conversion section 10A will be described as modifications 1 to 5.

[0256] (Variation 1) 59 is a schematic diagram showing a cross-sectional configuration of an image sensor A1B according to Modification 1. Like the image sensor A1A, the image sensor A1B is an image sensor such as a CMOS image sensor used in electronic devices such as digital still cameras and video cameras. The image sensor A1B of this modification differs from the image sensor A1A in that the lower electrode A11 is composed of one electrode for each unit pixel P.

[0257] As with the image sensor A1A, the image sensor A1B has one photoelectric conversion unit A10 and two photoelectric conversion regions A32B and A32R stacked vertically for each unit pixel P. The photoelectric conversion unit A10 is provided on the back surface (first surface A30A) of the semiconductor substrate A30. The photoelectric conversion regions A32B and A32R are embedded in the semiconductor substrate A30 and stacked in the thickness direction of the semiconductor substrate A30.

[0258] As described above, the imaging element A1B has a configuration similar to that of the imaging element A1A, except that the lower electrode A11 of the photoelectric conversion unit A10 consists of a single electrode, and no insulating layer A17 or semiconductor layer A18 is provided between the lower electrode A11 and the hole blocking layer A12.

[0259] In this way, the configuration of the photoelectric conversion unit A10 is not limited to that of the image sensor 1A described above, and the same effects as those of the image sensor 1A can be obtained with the configuration of the photoelectric conversion unit A10 of the image sensor A1B of this modified example.

[0260] (Variation 2) 60 is a schematic diagram showing a cross-sectional configuration of an image sensor A1C according to Modification 2. As with the image sensor A1A, the image sensor A1C is an image sensor such as a CMOS image sensor used in electronic devices such as digital still cameras and video cameras. The image sensor A1C of this modification has two photoelectric conversion units A10 and A80 and one photoelectric conversion region A32 stacked in the vertical direction.

[0261] The photoelectric conversion units A10 and A80 and the photoelectric conversion region A32 selectively detect light in different wavelength ranges and perform photoelectric conversion. For example, the photoelectric conversion unit A10 acquires a green (G) color signal. For example, the photoelectric conversion unit A80 acquires a blue (B) color signal. For example, the photoelectric conversion region A32 acquires a red (R) color signal. This makes it possible for the image sensor A1C to acquire multiple types of color signals in one pixel without using a color filter.

[0262] The photoelectric conversion units A10 and A80 have the same configuration as the imaging element A1A. Specifically, the photoelectric conversion unit A10 has a lower electrode A11, a hole blocking layer A12 (first layer A12A and second layer A12B), a photoelectric conversion layer A13, an electron blocking layer A14, a work function adjustment layer A15, and an upper electrode A16 laminated in this order, as in the imaging element A1A. The lower electrode A11 is composed of a plurality of electrodes (for example, a readout electrode A11A and a storage electrode A11B), and an insulating layer A17 and a semiconductor layer A18 are laminated in this order between the lower electrode A11 and the hole blocking layer A12. Of the lower electrode A11, the readout electrode A11A is electrically connected to the semiconductor layer A18 through an opening A17H provided in the insulating layer A17. Similarly to the photoelectric conversion section A10, the photoelectric conversion section A80 also has a lower electrode A81, a hole blocking layer A82 (first layer A82A and second layer A82B), a photoelectric conversion layer A83, an electron blocking layer A84, a work function adjustment layer A85, and an upper electrode A86 laminated in this order. The lower electrode A81 is made up of a plurality of electrodes (for example, a readout electrode A81A and a storage electrode A81B), and an insulating layer A87 and a semiconductor layer A88 are laminated in this order between the lower electrode A81 and the hole blocking layer A82 (first layer A82A and second layer A82B). Of the lower electrode A81, the readout electrode A81A is electrically connected to the semiconductor layer A88 through an opening A87H provided in the insulating layer A87. Note that one or both of the semiconductor layer A18 and the semiconductor layer A88 may be omitted.

[0263] A through electrode A91 is connected to the readout electrode A81A, which penetrates the interlayer insulating layer A89 and the photoelectric conversion unit A10 and is electrically connected to the readout electrode A11A of the photoelectric conversion unit A10. Furthermore, the readout electrode A81A is electrically connected to a floating diffusion AFD provided in the semiconductor substrate A30 via the through electrodes A34 and A91, and can temporarily store the charge generated in the photoelectric conversion layer A83. Furthermore, the readout electrode A81A is electrically connected to an amplifier transistor AMP and the like provided in the semiconductor substrate A30 via the through electrodes A34 and A91.

[0264] (Variation 3) FIG. 61 is a diagram showing an image sensor A1D according to Modification 3. FIG. 61(A) shows a schematic cross-sectional configuration of the image sensor A1D according to Modification 3. FIG. 61(B) shows a schematic cross-sectional view of the image sensor A1D shown in FIG. 61(A), and FIG. 61(A) shows a cross-section taken along line II-II in FIG. 61(B). The image sensor A1D is, for example, a stacked image sensor in which a photoelectric conversion region A32 and a photoelectric conversion section A60 are stacked. In the pixel section A100A of the photodetector including this image sensor A1D, as shown in FIG. 61(B), pixel units 1a each consisting of four pixels P arranged in two rows and two columns are repeated in an array in the row and column directions.

[0265] In the imaging element A1D of this modification, a color filter A55 that selectively transmits red light (R), green light (G), and blue light (B) is provided for each unit pixel P above the photoelectric conversion section A60 (light incident side AS1). Specifically, in a pixel unit 1a consisting of four pixels P arranged in 2 rows and 2 columns, two color filters that selectively transmit green light (G) are arranged on a diagonal line, and one color filter that selectively transmits red light (R) and blue light (B) is arranged on each diagonal line that is perpendicular to the pixel unit P. In the unit pixels P (pixels Pr, Pg, Pb) provided with each color filter, for example, the photoelectric conversion section 60 detects the corresponding color light. That is, in the pixel section 100A, pixels (Pr, Pg, Pb) that detect red light (R), green light (G), and blue light (B) are arranged in a Bayer pattern.

[0266] The color filter 90 of the color filter layer 9 previously described with reference to FIG. 13 etc. may correspond to the above-mentioned color filter.

[0267] The photoelectric conversion unit A60 absorbs light corresponding to some or all of the wavelengths in the visible light region of 400 nm or more and less than 750 nm, for example, to generate excitons (electron-hole pairs), and includes a lower electrode A61, an insulating layer (interlayer insulating layer A67), a semiconductor layer A68, a hole blocking layer A62 (first layer A62A and second layer A62B), a photoelectric conversion layer A63, an electron blocking layer A64, a work function adjustment layer A65, and an upper electrode A66 stacked in this order. The lower electrode A61, the interlayer insulating layer A67, the semiconductor layer A68, the hole blocking layer A62 (first layer A62A and second layer A62B), the photoelectric conversion layer A63, the electron blocking layer A64, the work function adjustment layer A65, and the upper electrode A66 have the same configurations as the lower electrode A11, the insulating layer A17, the semiconductor layer A18, the hole blocking layer A12, the photoelectric conversion layer A13, the electron blocking layer A14, the work function adjustment layer A15, and the upper electrode A16 of the image sensor A1A in the above embodiment, respectively. The lower electrode A61 has, for example, a readout electrode A61A and a storage electrode A61B that are independent of each other, and the readout electrode A61A is shared by, for example, four pixels P. The semiconductor layer A68 may be omitted.

[0268] The photoelectric conversion region A32 detects, for example, an infrared light region of 750 nm or more and 1300 nm or less.

[0269] In the image sensor A1D, among the light transmitted through the color filter A55, light in the visible light region (red light (R), green light (G) and blue light (B)) is absorbed by the photoelectric conversion unit A60 of the unit pixel P (pixels Pr, Pg, Pb) in which each color filter is provided, and other light, for example, light in the infrared light region (for example, 750 nm or more and 1000 nm or less) (infrared light (IR)), is transmitted through the photoelectric conversion unit A60. The infrared light (IR) transmitted through the photoelectric conversion unit A60 is detected in the photoelectric conversion region A32 of each unit pixel Pr, Pg, Pb, and a signal charge corresponding to the infrared light (IR) is generated in each unit pixel Pr, Pg, Pb. That is, a photodetection device equipped with the image sensor A1D is capable of simultaneously generating both a visible light image and an infrared light image.

[0270] Furthermore, in a photodetector including the image sensor 1D, a visible light image and an infrared light image can be obtained at the same position in the XY plane, which makes it possible to realize high integration in the XY plane.

[0271] (Variation 4) FIG. 62 is a diagram showing an image sensor A1E according to Modification 4. FIG. 62(A) shows a schematic cross-sectional configuration of the image sensor A1E according to Modification 4. FIG. 62(B) shows a schematic cross-sectional configuration of the image sensor A1E shown in FIG. 62(A), and FIG. 62(A) shows a cross-section taken along line III-III shown in FIG. 62(B). In the above Modification 3, the color filter A55 is provided above the photoelectric conversion unit A60 (light incident side AS1). However, the color filter A55 may be provided between the photoelectric conversion region A32 and the photoelectric conversion unit A60, as shown in FIG. 62(A).

[0272] In the image sensor A1E, for example, the color filter A55 has a configuration in which a color filter (color filter A55R) that selectively transmits at least red light (R) and a color filter (color filter A55B) that selectively transmits at least blue light (B) are arranged diagonally to each other in the pixel unit A1a. The photoelectric conversion unit A60 (photoelectric conversion layer A63) is configured to selectively absorb light having a wavelength corresponding to green light (G), for example. In the photoelectric conversion region A32R, light having a wavelength corresponding to red light (R) is selectively absorbed, and in the photoelectric conversion region A32B, light having a wavelength corresponding to blue light (B) is selectively absorbed. This makes it possible to obtain signals corresponding to red light (R), green light (G), or blue light (B) in the photoelectric conversion regions A32 (photoelectric conversion regions A32R, A32B) that are respectively arranged below the photoelectric conversion unit A60 and the color filters A55R, A55B. In the image sensor A1E of this modified example, the area of ​​each of the photoelectric conversion sections of RGB can be enlarged compared to a photoelectric conversion element having a general Bayer array, making it possible to improve the S / N ratio.

[0273] (Variation 5) FIG. 63 shows another example of the cross-sectional configuration of the imaging element A1C according to the modified example 2 as an imaging element A1F. FIG. 64 shows another example of the cross-sectional configuration of the imaging element A1D according to the modified example 3 as an imaging element A1G. FIG. 64 (A) shows another example of the cross-sectional configuration of the imaging element A1D according to the modified example 3 as an imaging element A1G. FIG. 64 (B) shows an example of the planar configuration of the imaging element A1G shown in FIG. 64 (A). FIG. 65 shows another example of the imaging element A1E according to the modified example 4 as an imaging element A1H. FIG. 65 (A) shows another example of the cross-sectional configuration of the imaging element A1E according to the modified example 4 as an imaging element A1H. FIG. 65 (B) shows an example of the planar configuration of the imaging element A1H shown in FIG. 65 (A).

[0274] In the above-mentioned modified examples 2 to 4, the lower electrodes A11, A61, A81 constituting the photoelectric conversion units A60, A80 are each composed of a plurality of electrodes (readout electrodes A11A, A61A, A81A and storage electrodes A11B, A61B, A81B), but the present invention is not limited to this. The imaging elements A1C, A1D, A1E according to modified examples 2 to 4 can be applied to the case where the lower electrode is composed of one electrode for each unit pixel P, as in the above-mentioned modified example 1, and can obtain the same effects as those of modified examples 2 to 4. In addition, a configuration without a semiconductor layer (for example, a configuration without the semiconductor layer A18 or the semiconductor layer A68) may be appropriately adopted.

[0275] 15. Mobile application examples The technology described above (the technology of the present disclosure) can be applied to various products. For example, the technology of the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, etc. A vehicle will be taken as an example of a moving body and described with reference to Figs. 66 and 67.

[0276] FIG. 66 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology of the present disclosure can be applied.

[0277] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 66, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053 are illustrated.

[0278] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0279] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0280] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0281] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0282] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0283] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0284] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0285] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0286] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 66, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0287] FIG. 67 is a diagram showing an example of the installation position of the imaging unit 12031.

[0288] In FIG. 67, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0289] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield in the vehicle interior of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield in the vehicle interior mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the upper part of the windshield in the vehicle interior is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0290] 67 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0291] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0292] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0293] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0294] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0295] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the above-described configurations. This provides the advantage of suppressing the deterioration of the light detection performance in the imaging unit 12031 and improving the imaging accuracy. For example, a captured image that is easier to see can be obtained, which increases the possibility of reducing the driver's fatigue.

[0296] 16. Application example to endoscopic surgery system The technology of the present disclosure may be applied to an endoscopic surgery system. Description will be given with reference to FIGS.

[0297] FIG. 68 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0298] 68 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0299] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.

[0300] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0301] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0302] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0303] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0304] The light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.

[0305] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.

[0306] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.

[0307] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0308] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

[0309] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0310] FIG. 69 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0311] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.

[0312] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0313] The imaging unit 11402 may include one imaging element (so-called single-plate type) or multiple imaging elements (so-called multiple-plate type). When the imaging unit 11402 is configured as a multiple-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. By performing a 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is configured as a multiple-plate type, the lens unit 11401 may also be provided in multiple systems corresponding to each imaging element.

[0314] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.

[0315] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

[0316] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0317] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.

[0318] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0319] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0320] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0321] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0322] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .

[0323] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0324] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0325] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0326] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0327] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 11402 among the configurations described above. This provides advantages such as suppressing the deterioration of the light detection performance in the imaging unit 11402 and improving the imaging accuracy. For example, a clearer image of the surgical site can be obtained, which increases the possibility that the surgeon can more reliably confirm the surgical site.

[0328] Although an endoscopic surgery system has been described here as an example, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0329] Note that the effects described in this disclosure are merely examples and are not limited to the disclosed contents. Other effects may also be obtained.

[0330] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the gist of the present disclosure. In addition, components of different embodiments and modifications may be appropriately combined.

[0331] The present technology can also be configured as follows. (1) A photoelectric conversion layer; an upper electrode layer provided above the photoelectric conversion layer; a lower electrode layer including a plurality of electrodes and provided below the photoelectric conversion layer; a light shielding portion provided above at least a portion of the photoelectric conversion layer; Equipped with When viewed in a plan view, the light-shielding portion includes an extending portion that extends between a specific electrode and an adjacent electrode among the plurality of electrodes of the lower electrode layer in a direction intersecting a direction in which the electrodes face each other. Light detection device. (2) A charge accumulation and transfer layer is provided between the photoelectric conversion layer and the lower electrode layer, for accumulating and transferring charges generated in the photoelectric conversion layer, The plurality of electrodes include a readout electrode for reading out charges stored in the charge storage and transfer layer; a storage electrode for storing charges generated in the photoelectric conversion layer in the charge storage and transfer layer; Including, The specific electrode and the adjacent electrode are the storage electrode and the readout electrode. The optical detection device according to (1). (3) When viewed in a plan view, the light blocking portion has an extension portion extending so as to surround the read electrode; The optical detection device according to (2). (4) When viewed in a plan view, the light blocking portion has an extension portion extending so as to surround the readout electrode; an extension portion extending to cover the read electrode; Including, An optical detection device according to (2) or (3). (5) the plurality of electrodes includes a plurality of the storage electrodes, the light shielding portion includes an extending portion that extends so as to surround each of the plurality of storage electrodes in a plan view; The photodetector according to any one of (2) to (4). (6) the plurality of electrodes includes separation electrodes provided between adjacent storage electrodes of the plurality of storage electrodes; When viewed in a plan view, the light-shielding portion includes an extending portion that extends so as to cover at least a portion of the separation electrode. The optical detection device according to (5). (7) The plurality of electrodes include A plurality of readout electrodes for reading out charges stored in the photoelectric conversion layer; a separation electrode provided between adjacent readout electrodes among the plurality of readout electrodes; Including, The specific electrode and the adjacent electrode are the separation electrode and the readout electrode. The optical detection device according to (1). (8) When viewed in a plan view, the light-shielding portion extends so as to surround the readout electrode and cover the separation electrode. The optical detection device according to (7). (9) the light blocking portion blocks light of a first wavelength band among light to be detected by the light detection device and transmits light of a second wavelength band; The photodetector according to any one of (1) to (8). (10) The photoelectric conversion layer generates charges according to the amount of light in the first wavelength band. The optical detection device according to (9). (11) One of the light in the first wavelength band and the light in the second wavelength band includes visible light, and the other includes infrared light. The optical detection device according to (9) or (10). (12) the light in the first wavelength band and the light in the second wavelength band both include visible light, the light of the first wavelength band includes one or more of green light, blue light, and red light; the light in the second wavelength band includes the remaining light; The optical detection device according to (9) or (10). (13) a first photoelectric conversion unit including the photoelectric conversion layer, the upper electrode layer, and the lower electrode layer; a second photoelectric conversion unit provided below the first photoelectric conversion unit; Equipped with The second photoelectric conversion unit generates charges according to the amount of light in the second wavelength band. The photodetector according to any one of (9) to (12). (14) the light of the first wavelength band includes two of green light, blue light, and red light; the light of the second wavelength band includes the remaining light, The light detection device includes: Two of the first photoelectric conversion units corresponding to two light beams included in the light of the first wavelength band; Two light-shielding units corresponding to the two first photoelectric conversion units; Equipped with The optical detection device according to (13). (15) The material of the light shielding portion includes an organic material. The photodetector according to any one of (1) to (14). (16) the material of the light-shielding portion includes an inorganic material, The inorganic materials include amorphous Si and SiO2; The photodetector according to any one of (1) to (14). (17) The light shielding portion is a waveguide that guides light of a first wavelength band among light to be detected by the light detection device so as to move the light away from the peripheral region of the specific electrode. The photodetector according to any one of (1) to (14). (18) The material of the light-shielding portion includes at least one of a metal material and a resin material. The photodetector according to any one of (1) to (8). (19) The light blocking portion is A sealing layer provided so as to cover the photoelectric conversion layer, On a sealing layer provided so as to cover the photoelectric conversion layer, In the upper electrode layer, In the photoelectric conversion layer, Or, In a color filter layer provided so as to cover the photoelectric conversion layer To be provided in The photodetector according to any one of (1) to (18). (20) An electronic device including a light detection device, The light detection device includes: A photoelectric conversion layer; an upper electrode layer provided above the photoelectric conversion layer; a lower electrode layer including a plurality of electrodes and provided below the photoelectric conversion layer; a light shielding portion provided above at least a portion of the photoelectric conversion layer; Including, When viewed in a plan view, the light-shielding portion includes an extending portion that extends between a specific electrode and an adjacent electrode among the plurality of electrodes of the lower electrode layer in a direction intersecting a direction in which the electrodes face each other. electronic equipment. [Explanation of symbols]

[0332] 10. Light detection device 11 Light detection area 12 pixels 13 Control circuit 14 Vertical drive circuit 15 Column signal processing circuit 16 Horizontal drive circuit 17 Output circuit 18H Signal line 18V signal line 19 Signal Line 1 Photoelectric conversion unit 1-1 Photoelectric conversion section 1-2 Photoelectric conversion section 2 Photoelectric conversion section 20 Photoelectric conversion element 20B Photoelectric conversion element 20R Photoelectric conversion element 3. Shading section 3m material 31 Inorganic layer 31m Material 32 Inorganic layer 32m Material 3B Light shielding part 3R light shielding area 3-1 Shading section 3-2 Shading section 3a extension 3b Extension part 3c extension 3c1 extension 3c2 extension 3c3 extension 4. Sealing layer 4a Groove 5 Electrode layer 51 Upper electrode 5-1 Electrode layer 5-2 Electrode layer 6 Photoelectric conversion layer 6a Middle section 6-1 Photoelectric conversion layer 6-2 Photoelectric conversion layer 7 Charge storage and transfer layer 7a middle part 7-1 Charge storage and transfer layer 7-2 Charge storage and transfer layer 8 Electrode layer 80 Insulator 81 Readout electrode 82 Storage electrode 83 Separation electrode 84 Charge transfer electrode 8a middle part 8-1 Electrode layer 8-2 Electrode layer 9 Color filter layer 90 Color Filters 90B Color Filter 90G Color Filter 90R Color Filter 9a Groove AMP1 Amplification transistor AMP2 Amplification transistor FD1 Floating Diffusion FD2 Floating Diffusion L light L1 light L2 light LB blue light lg green light LR Red light PR Photoresist RST1 Reset transistor RST2 Reset transistor SEL1 Select transistor SEL2 Selection transistor TG2 Transfer transistor VDD Power supply voltage VOU Voltage VSL1 pixel signal VSL2 pixel signal 100 Electronic equipment 101 Peripheral Elements

Claims

1. A photoelectric conversion layer; an upper electrode layer provided above the photoelectric conversion layer; a lower electrode layer including a plurality of electrodes and provided below the photoelectric conversion layer; a light shielding portion provided above at least a portion of the photoelectric conversion layer; Equipped with When viewed in a plan view, the light-shielding portion includes an extending portion that extends between a specific electrode and an adjacent electrode among the plurality of electrodes of the lower electrode layer in a direction intersecting a direction in which the electrodes face each other. Light detection device.

2. A charge accumulation and transfer layer is provided between the photoelectric conversion layer and the lower electrode layer, and accumulates and transfers charges generated in the photoelectric conversion layer. The plurality of electrodes include a readout electrode for reading out charges stored in the charge storage and transfer layer; a storage electrode for storing charges generated in the photoelectric conversion layer in the charge storage and transfer layer; Including, The specific electrode and the adjacent electrode are the storage electrode and the readout electrode.

2. The optical detection device according to claim 1.

3. When viewed in a plan view, the light blocking portion has an extension portion extending so as to surround the read electrode; 3. The optical detection device according to claim 2.

4. When viewed in a plan view, the light blocking portion has an extension portion extending so as to surround the readout electrode; an extension portion extending to cover the read electrode; Including, 3. The optical detection device according to claim 2.

5. the plurality of electrodes includes a plurality of the storage electrodes, the light shielding portion includes an extending portion that extends so as to surround each of the plurality of storage electrodes in a plan view; 3. The optical detection device according to claim 2.

6. the plurality of electrodes includes separation electrodes provided between adjacent storage electrodes of the plurality of storage electrodes; When viewed in a plan view, the light-shielding portion includes an extending portion that extends so as to cover at least a portion of the separation electrode.

6. The optical detection device according to claim 5.

7. The plurality of electrodes include A plurality of readout electrodes for reading out charges stored in the photoelectric conversion layer; a separation electrode provided between adjacent readout electrodes among the plurality of readout electrodes; Including, The specific electrode and the adjacent electrode are the separation electrode and the readout electrode.

2. The optical detection device according to claim 1.

8. When viewed in a plan view, the light-shielding portion extends so as to surround the readout electrode and cover the separation electrode.

8. The optical detection device according to claim 7.

9. the light blocking portion blocks light of a first wavelength band among light to be detected by the light detection device and transmits light of a second wavelength band; 2. The optical detection device according to claim 1.

10. The photoelectric conversion layer generates charges according to the amount of light in the first wavelength band.

10. The optical detection device according to claim 9.

11. One of the light in the first wavelength band and the light in the second wavelength band includes visible light, and the other includes infrared light.

10. The optical detection device according to claim 9.

12. the light in the first wavelength band and the light in the second wavelength band both include visible light, the light in the first wavelength band includes one or more of green light, blue light, and red light; the light in the second wavelength band includes the remaining light; 10. The optical detection device according to claim 9.

13. a first photoelectric conversion unit including the photoelectric conversion layer, the upper electrode layer, and the lower electrode layer; a second photoelectric conversion unit provided below the first photoelectric conversion unit; Equipped with The second photoelectric conversion unit generates charges according to the amount of light in the second wavelength band.

10. The optical detection device according to claim 9.

14. the light of the first wavelength band includes two of green light, blue light, and red light; the light of the second wavelength band includes the remaining one light, The light detection device includes: Two of the first photoelectric conversion units corresponding to two light beams included in the light of the first wavelength band; Two light-shielding units corresponding to the two first photoelectric conversion units; Equipped with 14. The optical detection device of claim 13.

15. The material of the light shielding portion includes an organic material.

2. The optical detection device according to claim 1.

16. the material of the light-shielding portion includes an inorganic material, The inorganic material includes amorphous Si and SiO2; 2. The optical detection device according to claim 1.

17. The light shielding portion is a waveguide that guides light of a first wavelength band among light to be detected by the light detection device so as to move the light away from an outer peripheral region of the specific electrode.

2. The optical detection device according to claim 1.

18. The material of the light-shielding portion includes at least one of a metal material and a resin material.

2. The optical detection device according to claim 1.

19. The light blocking portion is A sealing layer provided so as to cover the photoelectric conversion layer, On a sealing layer provided so as to cover the photoelectric conversion layer, In the upper electrode layer, In the photoelectric conversion layer, Or, In a color filter layer provided so as to cover the photoelectric conversion layer To be provided in 2. The optical detection device according to claim 1.

20. An electronic device including a light detection device, The light detection device includes: A photoelectric conversion layer; an upper electrode layer provided above the photoelectric conversion layer; a lower electrode layer including a plurality of electrodes and provided below the photoelectric conversion layer; a light shielding portion provided above at least a portion of the photoelectric conversion layer; Including, When viewed in a plan view, the light-shielding portion includes an extending portion that extends between a specific electrode and an adjacent electrode among the plurality of electrodes of the lower electrode layer in a direction intersecting a direction in which the electrodes face each other. electronic equipment.

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