Electronic device

Abstract

To provide an electronic device which can precisely recognize features of a face of a user.SOLUTION: A spectacle type electronic device comprises a first optical member, a second optical member, a frame, an imaging device, a feature extracting unit, and a feeling estimating unit. The frame is provided so as to be in contact with a side surface of the first optical member and a side surface of the second optical member. The imaging device is provided so as to be in contact with the frame and has a function of detecting a part of a face of a user of the spectacle type electronic device. The feature extracting unit has a function of extracting features of the face of the user from the detected part of the face of the user. The feeling estimating unit has a function of estimating information relating to the user from the extracted features.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One aspect of the present invention relates to a glasses-type electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof A semiconductor device functions by utilizing the semiconductor characteristics. This refers to all types of equipment that can [Background technology]

[0003] There is a known technology for recognizing facial expressions from captured images of faces. This technology automatically captures the image the moment the subject smiles or looks towards the camera. Facial expression recognition is being applied to

[0004] For example, Patent Document 1 describes a facial expression recognition technology that detects facial feature points and performs face recognition based on the feature points. A technology for recognizing facial expressions with high accuracy has been disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2007-087346 A Summary of the Invention [Problem to be solved by the invention]

[0006] Facial recognition can be done, for example, by shining infrared light on the face and detecting the reflected infrared light. Here, a light source that emits infrared light or the like and a sensor that detects reflected infrared light or the like detect a face, Facial expressions may not be recognized accurately, especially if they are far away from the eyes.

[0007] One aspect of the present invention provides an electronic device that can accurately recognize the facial features of a user. Another object of the present invention is to accurately estimate the emotion of a user. Another object of the present invention is to provide an electronic device that can reduce the fatigue of a user. It is an object of the present invention to provide an electronic device capable of accurately estimating a degree of fatigue. An object of one embodiment of the present invention is to provide a novel electronic device.

[0008] Another object of one embodiment of the present invention is to provide an electronic device having a display device with a large number of pixels. Another embodiment of the present invention is to provide an electronic device having a high-definition display device. Another object of one embodiment of the present invention is to provide a display device capable of displaying a high-definition image. Another object of the present invention is to provide an electronic device having a display device that can display an image. The object of the present invention is to provide an electronic device having a display device capable of displaying high-quality images. Another embodiment of the present invention is a display device capable of displaying highly realistic images. Another object of the present invention is to provide an electronic device having a high brightness display device. One object of the present invention is to provide an electronic device having a display device capable of displaying an image of various sizes. Another embodiment of the present invention is to provide an electronic device having a display device with a narrow frame. Another object of the present invention is to provide an electronic device having a small display device. Another object of one embodiment of the present invention is to provide a display device that operates at high speed. Another object of the present invention is to provide a display device with low power consumption. Another object of the present invention is to provide an electronic device having a low-cost Another object of the present invention is to provide an electronic device having a high-quality display device. An object of the present invention is to provide an electronic device having a highly reliable display device. An object of one embodiment of the present invention is to provide an electronic device including a novel display device.

[0009] Another object of one embodiment of the present invention is to provide a novel display device. An object of one embodiment of the present invention is to provide a novel imaging device.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. can be extracted from descriptions in the specification, drawings, claims, etc. [Means for solving the problem]

[0011] One aspect of the present invention is a method for manufacturing a camera comprising: a first optical member, a second optical member, a frame, an imaging device, and The frame includes a side surface of the first optical member and a side surface of the second optical member. the imaging device is provided in contact with the frame, The imaging device has a function of detecting a part of a face of a user, and the feature extraction unit detects the detected part of the face of the user. The facial feature of the user is extracted from a part of the face, and the emotion estimation unit estimates the extracted feature. The glasses-type electronic device has a function of estimating information about a user from the images.

[0012] Alternatively, in the above aspect, the information may be the user's fatigue level or emotion.

[0013] Alternatively, in the above aspect, a display device is provided, and the display device displays an image corresponding to the information. Good too.

[0014] Alternatively, in the above aspect, the display device has a light-emitting element, and the light-emitting element is an organic EL element. It is also possible.

[0015] Alternatively, in the above aspect, the display device includes a transistor, and the transistor has a channel. The formation region may have a metal oxide.

[0016] Alternatively, one aspect of the present invention is a method for manufacturing an imaging device, comprising: a first optical member; a second optical member; a frame; and and a display device, and the imaging device is a photoelectric converter having a function of detecting the amount of light received. The frame has a switching element and is in contact with a side surface of the first optical member and a side surface of the second optical member. The imaging device is provided so as to be in contact with the frame, and the display device is provided on the first layer. The first layer includes a gate driver circuit and a source driver circuit. a driver circuit, the second layer having a pixel array in which pixels are arranged in a matrix, The gate driver circuit and the source driver circuit have an area overlapping with the pixel. The driver circuit is a glasses-type electronic device having an area overlapping with the source driver circuit.

[0017] Alternatively, in the above aspect, the display device has a DA conversion circuit, and the DA conversion circuit is a potential generating A potential generating circuit includes a source driver circuit and a pass transistor logic circuit. The pass transistor logic circuit is provided outside the source driver circuit. The potential generating circuit has a function of generating a plurality of potentials having different magnitudes, and The register logic circuit receives the image data and, based on the digital value of the image data, The potential generating circuit may have a function of outputting any of the potentials generated by the potential generating circuit.

[0018] Alternatively, in the above aspect, the pixel has a light-emitting element, and the light-emitting element is an organic EL element. Good too.

[0019] Alternatively, in the above aspect, the pixel has a transistor, and the transistor is a channel forming The region may have a metal oxide. Effect of the Invention

[0020] According to one aspect of the present invention, an electronic device capable of accurately recognizing the facial features of a user is provided. Alternatively, according to one aspect of the present invention, the user's emotion can be accurately estimated. According to one embodiment of the present invention, it is possible to provide an electronic device that can reduce the fatigue level of a user. According to another embodiment of the present invention, there is provided an electronic device capable of accurately estimating This makes it possible to provide a novel electronic device.

[0021] According to one embodiment of the present invention, an electronic device having a display device with a large number of pixels can be provided. According to one embodiment of the present invention, an electronic device having a high-definition display device can be provided. According to one embodiment of the present invention, a high-definition image can be displayed. According to one embodiment of the present invention, an electronic device having a display device can be provided. It is possible to provide an electronic device having a display device capable of displaying a large number of images. According to one embodiment of the present invention, a display device capable of displaying highly realistic images is provided. According to one embodiment of the present invention, an electronic device that displays a high brightness image can be provided. It is also possible to provide an electronic device having a display device capable of displaying a light having a high resolution. In this manner, an electronic device having a display device with a narrow frame can be provided. According to one embodiment of the present invention, an electronic device having a small display device can be provided. According to one embodiment of the present invention, an electronic device having a display device that operates at high speed can be provided. According to one embodiment of the present invention, an electronic device including a display device with low power consumption can be provided. According to one embodiment of the present invention, an electronic device having a low-cost display device can be provided. According to one embodiment of the present invention, an electronic device having a highly reliable display device can be provided. According to one embodiment of the present invention, it is possible to provide an electronic device having a novel display device. Equipment can be provided.

[0022] According to one embodiment of the present invention, a novel display device can be provided. According to one aspect, a novel imaging device can be provided.

[0023] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. Effects other than these may also be included. It is possible to extract such information from descriptions in the specification, drawings, claims, etc. [Brief description of the drawings]

[0024] [Figure 1] 1A and 1B are diagrams showing configuration examples of electronic devices. [Diagram 2] 2A and 2B are diagrams showing configuration examples of electronic devices. [Diagram 3]3A to 3C are diagrams showing configuration examples of electronic devices. [Figure 4] FIG. 4 is a block diagram showing an example of the configuration of an electronic device. [Diagram 5] 5A and 5B are diagrams showing examples of the configuration of a neural network, and Fig. 5C is a graph showing emotion estimation. [Figure 6] Fig. 6(A) is a diagram showing an example of a usage mode of an electronic device, and Fig. 6(B) is a diagram showing an example of a field of view of a user of the electronic device. [Figure 7] FIG. 7 is a block diagram showing an example of the configuration of an electronic device. [Figure 8] FIG. 8 is a block diagram showing an example of the configuration of a display device. [Figure 9] FIG. 9 is a block diagram showing an example of the configuration of a display device. [Figure 10] FIG. 10 is a block diagram showing an example of the configuration of a display device. [Figure 11] FIG. 11 is a block diagram showing an example of the configuration of a display device. [Figure 12] FIG. 12 is a block diagram showing an example of the configuration of a display device. [Figure 13] FIG. 13 is a block diagram showing an example of the configuration of a display device. [Figure 14] FIG. 14 is a block diagram showing an example of the configuration of a display device. [Figure 15] FIG. 15 is a block diagram showing an example of the configuration of a display device. [Figure 16] FIG. 16 is a circuit diagram showing a configuration example of a DA conversion circuit. [Figure 17] FIG. 17 is a block diagram showing an example of the configuration of a shift register. [Figure 18] Fig. 18A is a block diagram showing an example of the configuration of a shift register, and Fig. 18B is a circuit diagram showing an example of the configuration of a shift register. [Figure 19] FIG. 19 is a schematic diagram showing an example of the arrangement of gate driver circuits and source driver circuits. [Figure 20]FIG. 20 is a top view showing a configuration example of a gate driver circuit and a source driver circuit. [Figure 21] 21A to 21G are diagrams showing examples of pixel configurations. [Figure 22] 22(A) and 22(B) are circuit diagrams showing examples of the configuration of a pixel. [Diagram 23] Fig. 23A is a circuit diagram showing an example of a pixel configuration, and Fig. 23B is a timing chart showing an example of a pixel operation method. [Figure 24] 24A to 24E are circuit diagrams showing examples of pixel configurations. [Diagram 25] FIG. 25 is a block diagram showing an example of the configuration of a display device. [Figure 26] FIG. 26 is a diagram illustrating an example of the operation of the display device. [Figure 27] FIG. 27 is a cross-sectional view showing a configuration example of a display device. [Figure 28] FIG. 28 is a cross-sectional view showing a configuration example of a display device. [Figure 29] FIG. 29 is a cross-sectional view showing a configuration example of a display device. [Diagram 30] FIG. 30 is a cross-sectional view showing a configuration example of a display device. [Diagram 31] 31(A) and 31(B) are top views showing configuration examples of pixels. [Diagram 32] FIG. 32 is a top view showing an example of a pixel configuration. [Diagram 33] FIG. 33 is a cross-sectional view showing an example of the configuration of a pixel. [Diagram 34] Fig. 34(A) is a schematic diagram showing an example of a pixel configuration, and Fig. 34(B) is a top view showing an example of a pixel configuration. [Diagram 35] 35(A) and 35(B) are top views showing configuration examples of pixels. [Diagram 36] FIG. 36 is a top view showing an example of a pixel configuration. [Figure 37] FIG. 37 is a top view showing an example of a pixel configuration. [Figure 38]FIG. 38 is a cross-sectional view showing an example of the configuration of a pixel. [Figure 39] 39(A) to 39(E) are diagrams showing configuration examples of light-emitting elements. [Diagram 40] 40(A) and 40(B) are cross-sectional views showing configuration examples of an imaging device. [Diagram 41] Fig. 41A is a top view illustrating a configuration example of a transistor, and Fig. 41B and Fig. 41C are cross-sectional views illustrating a configuration example of a transistor. [Diagram 42] Fig. 42A is a top view illustrating a configuration example of a transistor, Fig. 42B and Fig. 42C are cross-sectional views illustrating a configuration example of a transistor. [Diagram 43] Fig. 43A is a top view illustrating a configuration example of a transistor, Fig. 43B and Fig. 43C are cross-sectional views illustrating a configuration example of a transistor. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, the embodiments will be described with reference to the drawings. It is possible to carry out the present invention in various forms without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that various modifications may be made to the details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0027] In each figure described in this specification, the size, layer thickness, or area of ​​each component is not clearly indicated. The figures may be exaggerated for illustrative purposes and are not necessarily limited to scale.

[0028] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not intended to be a numerical limiting factor.

[0029] In addition, in this specification, the terms "above," "below," "to the left," "to the right," and the like, which indicate positioning, are used for convenience in explaining the positional relationship between the components with reference to the drawings. The positional relationship between the components changes as appropriate depending on the direction in which each component is depicted. Therefore, the present invention is not limited to the words and phrases described in the specification, and can be rephrased appropriately according to the situation. .

[0030] A transistor is a type of semiconductor device that controls the amplification of current and voltage and the conduction or non-conduction of electricity. In this specification, the transistor is an IG FET(Insulated Gate Field Effect Transist) or) and thin film transistors (TFTs). nothing.

[0031] In addition, in this specification and the like, the functions of the source and drain of a transistor are The polarity of the resistors may change, or the direction of the current may change during circuit operation. For this reason, the terms source and drain can be used interchangeably.

[0032] In this specification, "electrical connection" refers to a direct connection and a connection through some means. This includes cases where the device is connected via "something that has an electrical effect." "Something that has an electrical effect" means something that enables the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connecting", In real circuits, there may be no physical connections, just wires running along the circuit. In addition, even if it is expressed as a "direct connection," it is not the case that different conductors are connected via contacts. This includes cases where different conductors are connected together. In some cases, the elements may be different.

[0033] Unless otherwise specified in this specification, the off-state current refers to the current that flows when a transistor is in an off-state. The drain current when the device is in the off state (also called the non-conducting state or cut-off state). , Unless otherwise specified, for n-channel transistors, the voltage between the gate and source, V g s is the threshold voltage V th (For p-channel transistors, V th Higher than ) state.

[0034] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wire." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is formed as an integral part.

[0035] In addition, in this specification, the resistance value of a "resistor" may be determined by the length of the wiring. Or, the resistance value can be adjusted by connecting a conductor having a different resistivity from the conductor used in the wiring. In some cases, the resistance is determined by doping impurities into the semiconductor. There are cases.

[0036] In addition, in this specification, a "terminal" in an electric circuit is a terminal that is used to input or output a current or voltage. The terminal is the part where power or signals are received or transmitted. It may function as a.

[0037] In this specification, the term "metal oxide" refers to a metal oxide in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called OS), etc. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, when referring to an OS FET, In other words, the transistor may be a transistor including an oxide or an oxide semiconductor.

[0038] (Embodiment 1) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to drawings.

[0039] FIG. 1A is a perspective view illustrating a configuration example of an electronic device 10a, which is an electronic device of one embodiment of the present invention. The electronic device 10a is a glasses-type electronic device and includes a pair of display devices 11 (display device 1 1a, display device 11b), a pair of housings 12 (housing 12a, housing 12b), a pair of optical members 13 (optical member 13a, optical member 13b), a pair of mounting portions 14 (mounting portion 14a, mounting portion 1 4b), a pair of imaging devices 15 (imaging device 15a, imaging device 15b), a pair of display areas 16 (display area 16a, display area 16b), and a pair of nose pads 17 (nose pad 17a, nose pad 1 7b). The electronic device 10a also includes a frame 18 and a camera 19.

[0040] In the electronic device 10a, the display device 11a is disposed inside the housing 12a, and the display device 11b is disposed inside the housing 12. The housing 12a can be provided inside the left end side surface of the frame 18, for example. The housing 12b is provided so as to contact, for example, the right end side surface of the frame 18. The housing 12a is provided so as to contact the right end side surface of the frame 18. 12b may be provided so as to contact the left end side surface of the frame 18.

[0041] The mounting portion 14a is adapted to contact the housing 12a, and the mounting portion 14b is adapted to contact the housing 12b. The display area 16a can be provided so as to overlap with the optical member 13a. The frame 18 is provided so as to overlap the optical member 13b. The optical member 13a and the optical member 13b may be provided so as to be in contact with each other on their respective side surfaces.

[0042] The camera 19 can be provided in contact with the frame 18. For example, the camera 19 can be , can be mounted on the bridge of the frame 18. That is, the camera 19 can be mounted on the optical member 13. Alternatively, the camera 19 can be provided between the nose pad 17a and the optical member 13b. It can be provided between the nose pad 17b.

[0043] The display device 11a and the display device 11b have a function of displaying images. The image displayed by the display device 11b can be projected onto the display area 16a. The displayed image can be projected onto the display area 16b. The user can visually recognize the image displayed by the display device 11a through the display area 16a. In addition, the image displayed by the display device 11b can be viewed through the display area 16b. It can be acknowledged.

[0044] The display device 11 preferably has a function of displaying a high-definition image. For example, It is preferable that the device has a function to display images with a resolution of 2000 ppi or more, and It is more preferable that the display device has a function of displaying images with a resolution of 5000 ppi or higher. It is more preferable that the electronic device 10a has a function of displaying a high-resolution image. Since the display device is a 3D display, the distance between the user's eyes and the display area 16 is short. When the image displayed by the electronic device 10a does not have high resolution, the user of the electronic device 10a may When viewing an image displayed on the display device 16, the user may feel a sense of graininess. By increasing the definition of the image displayed by the electronic device 10a, the user of the electronic device 10a can feel the graininess of the image. The image displayed in the display area 16 can be viewed without feeling any discomfort. A specific example of the configuration of a display device capable of displaying an image will be described later.

[0045] The display device 11 has pixels. The pixels include sub-pixels each having a function of emitting red light, for example. a sub-pixel having a function of emitting green light, and a sub-pixel having a function of emitting blue light. The pixels of the display device 11 include sub-pixels that have a function of emitting infrared light. In this case, the image capturing device 15 detects infrared light, and the details will be described later. This allows the electronic device 10a to have a function of detecting the eyes of the user and the surrounding conditions. Cut.

[0046] The optical member 13 has a function of transmitting incident light. The optical member 13 has a function of transmitting visible light. The optical member 13 has a function of refracting incident light, and thus the electronic device The refractive error of the eye of the user of the optical member 10a can be corrected. The optical member 13 may be, for example, a concave lens, a convex lens, a progressive lens, or the like. The optical member 13 may be made of a material such as a plastic lens. It may be made of plastic or glass.

[0047] The optical member 13 does not necessarily have to have the function of refracting incident light. For example, when a person without refractive error uses the electronic device 10a, the user may suffer from fatigue, headaches, etc. , and suppresses feelings of nausea, etc.

[0048] The optical member 13 has a light-transmitting property, and the display area 16 is provided, so that the electronic device 10a The user can see the image displayed in the display area 16 superimposed on the transmitted image viewed through the optical member 13. Therefore, the electronic device 10a is an Augmented Reality (AR) The electronic device may be capable of displaying a virtual reality (VR) image.

[0049] The optical member 13 does not have to be transparent. In this case, the use of the electronic device 10a The user can only see the image displayed in the display area 16 without seeing the external environment. Therefore, the electronic device 10a is an electronic device capable of displaying VR (Virtual Reality). In the case where the optical member 13 does not have light transmission, for example, the optical member 13a The entire area occupied by the optical member 13b is the display area 16a. By using the area 16b, the image that can be viewed by the user of the electronic device 10a can be enlarged. Therefore, it is preferable.

[0050] The imaging device 15 has a function of detecting light. In addition to a sensor (photoelectric conversion element) having a function of detecting the amount of light, it is preferable to provide a light source. As a result, the light emitted by the light source is irradiated onto, for example, the face of the user of the electronic device 10a, and is reflected. The captured light can be detected by a sensor. For example, the imaging device 15 is used for the electronic device 10a. The electronic device can have a function of detecting the condition of the user's eyes and the surroundings. 10a can have a function of recognizing the facial features of the user, such as the user's facial expression, Therefore, it can have a function of estimating the user's fatigue level, emotions, etc.

[0051] The light source provided in the imaging device 15 has a function of emitting, for example, infrared light, for example, near-infrared light. In this case, the sensor provided in the imaging device 15 is, for example, an infrared light sensor, It is preferable that the imaging device 15 has a function of detecting near-infrared light. In this case, the imaging device 15 is provided with a function of emitting red light, for example. The sensor to be used preferably has a function of detecting red light, for example. The slave device 10a can accurately recognize the facial features of the user, such as the user's facial expression.

[0052] The sensor provided in the imaging device 15 has a function of detecting, for example, far-infrared light. In this way, the image capturing device 15 has a function of detecting the temperature of the face surface, for example. Therefore, the electronic device 10a can estimate, for example, the physical condition, emotions, etc. of the user. For example, the imaging device 15 may have a sensor that detects red light. When the electronic device 10a has both a sensor having a function of detecting far-infrared light and a sensor having a function of detecting far-infrared light, The user's emotions, etc. can be estimated more accurately.

[0053] In this specification, infrared light refers to light having a wavelength of, for example, 0.7 μm or more and 1000 μm or less. In addition, near-infrared light refers to light with a wavelength of, for example, 0.7 μm or more and 2.5 μm or less, and Infrared light refers to light with a wavelength of, for example, 2.5 μm or more and 4 μm or less. Furthermore, far-infrared light is For example, it refers to light having a wavelength of 4 μm or more and 1000 μm or less. In this specification, far-infrared light is sometimes simply referred to as infrared light. For example, it refers to light with a wavelength of 0.6 μm or more and 0.75 μm or less.

[0054] It is preferable that the imaging device 15 is provided so as to be in contact with the frame 18. An imaging device 15a is provided to surround the optical member 3a, and an imaging device 15b is provided to surround the optical member 13b. This makes it possible to prevent the eyes of the user of the electronic device 10a from being in a state where the image capturing device 15 is ... Since the distance between the electronic device 10a and the user can be shortened, the electronic device 10a can easily detect the user's facial expression and other information. Facial features can be accurately recognized.

[0055] The imaging device 15a completely surrounds the optical member 13a, and the imaging device 15b completely surrounds the optical member 13a. 3b, but this is not a limitation of the present invention. Alternatively, the imaging device 15a may be provided so as to surround only a portion of the optical member 13b. The imaging device 15a and the imaging device 15b may be provided so as to surround the imaging device 15a. Two or more of each may be provided.

[0056] The imaging device 15 does not need to be provided with a light source. In this case, For example, the light source may be provided on the bridge of the frame 18. A light source is provided between the housing 12a and the optical member 13a, and between the housing 12b and the optical member 13b. By not providing a light source in the imaging device 15, photoelectric conversion elements can be densely arranged in the imaging device 15. It can be set at any time.

[0057] In addition, if the imaging device 15 does not have a light source, the light emitted from the display device 11 may be reflected by, for example, an electronic device. The light reflected from the face of the user of the image sensor 10a is converted into an electric signal by a photoelectric conversion element of the image sensor 15. In this case, the pixels provided in the display device 11 emit infrared light. It is preferable that the ion exchange resin has a function of

[0058] The camera 19 has a function of capturing an image in front, that is, in the opposite direction to the mounting unit 14. , can be called an imaging device.

[0059] Next, a method for projecting an image onto the display area 16 of the electronic device 10a will be described with reference to FIG. The display device 11, the lens 21, and the reflector 22 are provided inside the housing 12. In addition, a portion of the optical member 13 corresponding to the display area 16 has a function as a half mirror. The reflecting surface 23 is

[0060] The light 25 emitted from the display device 11 passes through the lens 21 and is reflected by the reflector 22. Inside the optical member 13, the light 25 is reflected toward the end surface of the optical member 13. The light is repeatedly reflected and reaches the reflecting surface 23, whereby an image is projected onto the reflecting surface 23. The user can see the light 25 reflected by the reflecting surface 23 and the optical member 13 (including the reflecting surface 23). Both the reflected light 26 and the transmitted light 26 can be seen.

[0061] FIG. 1B shows an example in which the reflector 22 and the reflecting surface 23 each have a curved surface. This allows for greater freedom in optical design compared to when the reflector 22 and the reflecting surface 23 are flat. This allows the thickness of the optical member 13 to be reduced. The projection surface 23 may be a flat surface.

[0062] The reflector 22 may be a member having a mirror surface, and preferably has a high reflectance. Also, a half mirror utilizing the reflection of a metal film may be used as the reflecting surface 23. If a prism or the like that utilizes total reflection is used, the transmittance of the transmitted light 26 can be increased.

[0063] Here, the housing 12 adjusts the distance between the lens 21 and the display device 11 and the angle therebetween. It is preferable that the optical system has a mechanism for adjusting the focus and enlarging and reducing the image. For example, one or both of the lens 21 and the display device 11 may be It is sufficient if the structure is such that it is movable in the axial direction.

[0064] In addition, it is preferable that the housing 12 has a mechanism for adjusting the angle of the reflector 22. By changing the angle of the reflector 22, the position of the display area 16 on which the image is displayed can be changed. This allows the display area 16 to be positioned at an optimal position according to the position of the user's eyes. It becomes possible to do so.

[0065] 2A and 2B show a configuration example of an electronic device 10b which is one embodiment of the present invention. The electronic device 10b is a head mounted display (HMD). The electronic device 10b may be a GoPro Mounted Display. Alternatively, the electronic device 10b can be called a glasses-type electronic device. This can be done.

[0066] The electronic device 10b includes a housing 31, a display device 33, a fixture 34, and a pair of optical members 35 ( Optical members 35a and 35b) and a pair of frames 36 (frame 36a, frame 36b), a pair of imaging devices 37 (imaging device 37a, imaging device 37b), a light source 40, has.

[0067] The electronic device 10b is provided with an opening 32, and an optical element is disposed in contact with the opening 32. A member 35, a frame 36, and a light source 40 are provided. The frame 36 is a The light source 40 is provided so as to contact the side surface of the optical member 35 and surround the optical member 35. The display device 33 may be provided between the optical member 35a and the optical member 35b. , can be provided inside the housing 31.

[0068] The display device 33 has a function of displaying an image. The image displayed on the display device 33 is The user of the device 10b can see through the optical member 35. The display device 11 of the child device 10a has a function of displaying high-definition images. For example, when the size of the display area of ​​the display device 33 is 8 inches, the display device 33 is preferably 8K. It is preferable to have the capability to display images with a resolution of 4K.

[0069] The optical member 35 has the same function as the optical member 13 of the electronic device 10a. The material, configuration, etc. of the optical member 35 can be the same as those of the optical member 13 .

[0070] The user of the electronic device 10b views the image displayed on the display device 33 through the optical member 35. The electronic device 10b can be an electronic device capable of VR display. .

[0071] The imaging device 37 has a function of detecting light. The imaging device 37 is provided with a photoelectric conversion element. Since the electronic device 10b is provided with the light source 40, the imaging device 37 is not provided with a light source. It's not necessary.

[0072] The electronic device 10b includes an imaging device 37 and a light source 40. For example, light is irradiated onto the face of the user of the electronic device 10b, and the reflected light is detected by the imaging device 37. For example, the imaging device 37 can capture the eyes and surroundings of the user of the electronic device 10b. Therefore, the electronic device 10b can detect the state of the edge of the electronic device 1. Like the 0a, it can have the ability to recognize the user's facial features, such as the user's facial expression. Therefore, it is possible to have a function for estimating, for example, the user's fatigue level, emotions, etc.

[0073] The light source 40 preferably has a function of emitting, for example, infrared light, for example, near-infrared light. In this case, the imaging device 37 preferably has a function of detecting, for example, infrared light, for example, near-infrared light. Alternatively, it is preferable that the light source 40 has a function of emitting red light, for example. In this case, it is preferable that the imaging device 37 has a function of detecting red light, for example. The electronic device 10b can accurately recognize the facial features of the user, such as the user's facial expression. Similarly to the imaging device 15 of the electronic device 10a, the imaging device 37 is, for example, a far-infrared It may have a function for detecting outside lines.

[0074] The electronic device 10b does not need to have the light source 40. In this case, the display device 33 does not need to have a red By providing pixels having a function of emitting external light, the imaging device 37 can be used as an image sensor for, for example, an electronic device 1. It can have the function of detecting the eyes of the user of 0b and the condition of their surroundings.

[0075] The imaging device 37a is preferably provided so as to be in contact with the frame 36a. The positioning member 37b is preferably provided so as to be in contact with the frame 36b. Since the distance between the eyes of the user of the electronic device 10b and the image capturing device 37 can be shortened, The device 10b can accurately recognize the user's facial features, such as the user's facial expression.

[0076] The imaging device 37a completely surrounds the optical member 35a, and the imaging device 37b completely surrounds the optical member 35a. 5b, but this is not a limitation of the present invention. Alternatively, the imaging device 37a may be provided so as to surround only a portion of the optical member 35b. The imaging device 37a and the imaging device 37b may be provided so as to surround the imaging device 37a. Two or more of each may be provided.

[0077] In FIGS. 2A and 2B, the imaging device 37 is provided so as to be in contact with the frame 36. However, one aspect of the present invention is not limited to this. For example, the imaging device 37 may be disposed so as to contact the opening 32. For example, as shown in FIG. 3(A), an optical member 35 and a frame 36 may be removed. An imaging device 37 may be provided so as to surround the optical member 3. An imaging device 37 is provided so as to surround the frame 36 and contact the frame 36. Another imaging device 37 may be provided so as to surround the opening 32 and be in contact with the opening 32 .

[0078] Also, the electronic device 10b may not have the imaging device 37. In this case, for example, As shown in FIG. 1C, a light source 40a is provided in contact with the frame 36a, and a light source 40b is provided in contact with the frame 36b. In other words, the imaging device 37 can be placed on the light source 40. If the electronic device 10b does not have the imaging device 37, for example, the display device 3 In other words, the display device 33 is provided with a function of an image pickup device. The electronic device 10b has a function of detecting the state of the user's eyes and the surroundings, for example. This can be done.

[0079] FIG. 4 is a block diagram showing an example of the configuration of the electronic device 10 (electronic device 10a, electronic device 10b). The electronic device 10 includes an information presentation unit 51, a subject detection unit 52, a feature extraction unit 53, and an estimation unit 54. 4, and information generating unit 55.

[0080] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although the block diagram is shown as a block diagram, the actual components are completely separated by function. It is difficult to realize that one component is related to multiple functions, and one function is related to multiple components. It is possible that this could be achieved.

[0081] The information presenting unit 51 presents the user of the electronic device 10 with information based on the sense of sight, smell, hearing, or touch. The information presenting unit 51 has a function of providing a stimulus by using the information generated by the information generating unit 55 described later. The information can be presented (output) to a user of the electronic device 10. The display area 16 of the electronic device 10b and the display device 33 of the electronic device 10b are It can be said that the information presenting unit 51 is a part of the information presenting unit 51 or has the information presenting unit 51.

[0082] Various hardware can be used as the information presentation unit 51. For example, the electronic device 1 When providing a visual stimulus (or presenting information) to the user, an image is displayed. Use a display device that can change the brightness or chromaticity of the light. For example, devices that stimulate the sense of smell can be used to stimulate the sense of smell by vibration or heat. You can use an aroma diffuser to spread the scent. The device that provides the sound is a speaker, a headphone, or an earphone. In addition, vibration devices can be used to stimulate the sense of touch. A motion device, etc. can be used.

[0083] The subject detection unit 52 acquires information such as a part of the face of the user of the electronic device 10 and identifies the information. The electronic device 10a has a function of outputting the image to the feature extraction unit 53. The imaging device 37 of the device 10b is a part of the object detection unit 52 or is a part of the object detection unit It can be said that it has 52.

[0084] The feature extraction unit 53 extracts feature points from the face information output from the subject detection unit 52, A part or whole of the facial features are extracted from the positions of the feature points, and the extracted feature information is input to an estimation unit 54. It has the function of outputting to.

[0085] When the face information acquired by the subject detection unit 52 is information on the eyes and their surroundings, the feature extraction unit The features extracted by 53 include the pupil, iris, cornea, conjunctiva (white of the eye), inner corner of the eye, outer corner of the eye, and upper part of the eye. Examples of the skin on the eyelids, lower eyelids, eyelashes, eyebrows, the space between the eyebrows, the inner corner of the eyebrow, and the outer corner of the eyebrow. Other features besides the surroundings include the root of the nose, the tip of the nose, the bridge of the nose, the nostrils, the lips (upper lip, lower lip), the corners of the mouth, the cleft lip, The features include teeth, cheeks, chin, jaw, and forehead. The feature extraction unit 53 extracts the shapes and positions of these facial features. The system recognizes the location of each part, and extracts the position coordinates of the feature points in each part. The position coordinate data and the like can be output to the estimation unit 54 as facial feature information.

[0086] The feature extraction unit 53 extracts features from the image acquired by the subject detection unit 52. Various algorithms can be applied to extract feature points. For example, SIFT (S cale Invariant Feature Transform), SURF(S peed Up Robust Features), HOG (Histogram Algorithms such as "S of Oriented Gradients" can be used. Cut.

[0087] In particular, the feature extraction by the feature extraction unit 53 is performed by inference using a neural network. In the following, a case where a neural network is used will be described. .

[0088] FIG. 5A shows a neural network NN1 that can be used in the feature extraction unit 53. The neural network NN1 has an input layer 61, three hidden layers 62, and an output The number of intermediate layers 62 is not limited to three, but may be one or more.

[0089] Data 71 generated by the object detection unit 52 is input to the neural network NN1. The data 71 includes coordinates and values ​​corresponding to the coordinates. The image data may include a target and a gradation value corresponding to the coordinates. The network NN1 outputs data 72. The data 72 includes the positions of the above-mentioned feature points. This is data that includes coordinates.

[0090] The neural network NN1 extracts the above-mentioned feature points from data 71 such as image data. The neural network is trained to detect the location of the object and output its coordinates. In the NN1, the intermediate layer 62 performs edge processing using various filters, etc., to The neural network is trained so that the neuron values ​​in the output layer 63 corresponding to the coordinates where the feature points exist are high. There are.

[0091] The estimation unit 54 estimates the use of the electronic device 10 from the facial feature information input from the feature extraction unit 53. and outputting the estimated information to the information generating unit 55. Here, the estimation unit 54 has a function of estimating the degree (level) of fatigue, physical condition, emotion, etc. It is preferable to have

[0092] The estimation by the estimation unit 54 is preferably performed by inference using a neural network. I wish.

[0093] FIG. 5B is a schematic diagram of a neural network NN2 that can be used in the estimation unit 54. FIG. 5B illustrates a case where the estimation unit 54 estimates the emotion of the user of the electronic device 10. In addition, the neural network NN2 is roughly the same as the neural network NN The input layer of the neural network NN2 is The number of neurons, 61, can be less than that of the neural network NN1. .

[0094] The neural network NN2 receives the data 72 generated by the feature extraction unit 53. The data 72 includes information related to the coordinates of the extracted feature points.

[0095] In addition, data 72 was processed as input data to the neural network NN2. For example, a vector connecting any two feature points may be calculated and used as the The results for all or some of the feature points are fed to the neural network NN2. Alternatively, the calculated vector may be normalized. In the following, we use processed data 72 output by the neural network NN1. This data will also be written as Data 72.

[0096] When data 72 is input, neural network NN2 outputs data 73. The data 73 corresponds to the neuron values ​​output from each neuron in the output layer 63. Each neuron in the power layer 63 is associated with one emotion. Thus, the data 73 is a set of nicotine values ​​corresponding to a given emotion (happiness, enjoyment, surprise, excitement, disgust, etc.). The data contains the neuron values ​​of the neurons.

[0097] The neural network NN2 estimates the degree of each emotion from the data 72 and The electronic device 10 is trained in advance to output the face value as a face value. The facial features of the user, such as facial expression, can be determined based on the relative positional relationship of the multiple feature points. Therefore, the neural network NN2 can identify the user from the facial features. You can guess the emotions you are feeling.

[0098] FIG. 5(C) is a schematic diagram of data 73. The higher the emotion value, the higher the degree of the estimated emotion. From the degree of an emotion, the degree of another emotion can be estimated. The data including these emotions is called data 74. In FIG. 5(C), the emotions include joy, pleasure, surprise, excitement, disgust, etc. This shows a case where the degree of the emotion of interest is estimated from the degree of the emotion of

[0099] The degree of emotion of interest contained in data 74 is, for example, the degree of joy and pleasure contained in data 73. The degree of emotion, such as happiness, surprise, excitement, or disgust, can be estimated by inputting the degree of emotion into a specified formula. For example, the greater the degree of emotions such as joy, fun, surprise, and excitement, the greater the degree of interest. Increase the degree so that the greater the degree of dislike, the smaller the degree of interest. You can set the expression as follows:

[0100] Note that estimation of fatigue level, physical condition, emotions, etc. can also be performed without using a neural network. For example, an image of a part of the face of the user of the electronic device 10 acquired by the subject detection unit 52 may be The image is compared with a template image and the similarity is calculated by a template matching method. In that case, the feature extraction unit 53 may not be provided.

[0101] The information generating unit 55 generates the information on the electronic device 1 based on the fatigue level, physical condition, emotion, etc. estimated by the estimating unit 54. The information presenting unit 51 has a function of determining or generating information to be presented to the user of the device. As a result, the information presenting unit 51 presents information corresponding to the information generated by the information generating unit 55. It is possible.

[0102] For example, if the information presenting unit 51 has a function of displaying an image, the information generating unit 55 The image to be displayed can be generated or selected, and output to the information presentation unit 51. When the device 1 functions as a lighting device, the information generating unit 55 generates information such as the brightness (illuminance) of the lighting device. The information presentation unit 51 can determine the chromaticity and output the determined chromaticity to the information presentation unit 51. In the case where the device has a function of dispersing a fragrance, the information generating unit 55 determines the type of fragrance to be dispersed, or The strength of the signal can be determined and a signal for controlling the operation of the information presenting unit 51 can be output. In addition, if the information presenting unit 51 has a function of outputting sound, the information generating unit 55 reproduces the sound. It is possible to generate or select a sound and output it to the information presenting unit 51 together with information on the volume to be reproduced. In addition, when the information presenting unit 51 has a function of inducing vibration, the information generating unit 55 The vibration pattern and intensity are determined, and a signal for controlling the operation of the information presentation unit 51 is output. This can be done.

[0103] The above is a description of the configuration example of the electronic device 10.

[0104] The data 72 output from the feature extraction unit 53 is not input to the estimation unit 54, but is generated by the information generation unit 55. For example, the facial expression of the user of the electronic device 10 may be input directly to the estimation unit 55. Even if the estimation by the feature extraction unit 54 is not performed, the feature can be detected by extracting the feature points by the feature extraction unit 53. In such a case, the data 72 output from the feature extraction unit 53 is By directly inputting the signal to 55, the power consumption of the electronic device 10 can be reduced.

[0105] FIG. 6A is a diagram showing an example of a usage mode of the electronic device 10. The figure shows a user 81 of an electronic device 10 having a conversation with a user 82 of another electronic device 10. Specifically, a user 82 is shown talking to a user 81.

[0106] The electronic device 10 shown in FIG. 6A is the electronic device 10a shown in FIG. 1A, further including a transmitter 56 and The electronic device 10b shown in FIG. A configuration in which a transmitter 56 and a receiver 57 are provided may also be used.

[0107] The transmitter 56 and the receiver 57 may be provided inside the housing 12. The transmitter 56 is The transmitter 57 may be a line transmitter and the receiver 57 may be a wireless receiver. The transmitter 56 and the receiver 57 do not have to be provided inside the housing 12. For example, The receiver 57 may be provided outside the housing 12 so as to be in contact with the housing 12. 56 and receiver 57 may be integrated together.

[0108] The transmitter 56 has a function of transmitting the information generated by the information generating unit 55 to the outside of the electronic device 10. In FIG. 6A, the information generating unit 55 transmits the generated information to another electronic device 10. This shows the case where

[0109] The receiver 57 has a function of receiving information from outside the electronic device 10. For example, The device 10 has a function of receiving information transmitted from the transmitter 56. The received information is, for example, For example, it can be displayed on the information presenting unit 51.

[0110] In the case shown in FIG. 6(A), user 81 listens to the contents of the speech of user 82. The electronic device 10 used by the user 81 estimates the emotion felt by the user 81. The electronic device 10 used by the user 81 estimates the degree of interest in the content of the second story. The information indicating the degree of interest of the user 81 is provided in the electronic device 10 used by the user 81. The information transmitted from the transmitter 56 is used by the user 82. The receiver 57 receives the information. The information received by the receiver 57 is presented by the information presenting unit 51. .

[0111] FIG. 6B shows the field of view of a user 82. In addition to the user 81, the field of view of the user 82 includes The information presentation unit 51 includes an electronic device used by a user 82. The information received by the receiver 57 of the device 10 is displayed. For example, the interest of the user 81 The degree of taste is displayed. Thus, the user 82 knows the degree of interest of the user 81. For example, if the user81 is not very interested, you can change the topic. This allows the user 81 to find out topics that interest him or her. In this case, user 81 can find out the degree of interest of user 82.

[0112] Alternatively, the information presentation unit 51 of the electronic device 10 may display information such as the fatigue level, physical condition, etc., of the user of the other electronic device 10. In this way, the user of the electronic device 10 can easily see the status of other users of the electronic device 10. Therefore, for example, the user of the electronic device 10 can know the degree of fatigue, physical condition, etc. It is possible to show consideration for those with high blood pressure or who are not feeling well by encouraging them to take rest. Or, it is possible to give accurate advice on health management.

[0113] FIG. 7 is a block diagram showing an example of the configuration of the electronic device 10 shown in FIG. 6(A), which is different from the configuration shown in FIG. The electronic device 10 shown in FIG. 7 has a transmitter 56 and a receiver 57. 4. In this respect, the electronic device 10 differs from the electronic device 10 shown in FIG.

[0114] As shown in FIG. 7, information generated by an information generating unit 55 is supplied to a transmitter 56. The information is transmitted external to the electronic device 10 by the transmitter 56 .

[0115] The receiver 57 receives information from outside the electronic device 10. For example, Alternatively, the electronic device 10 can receive information transmitted from an electronic device other than the electronic device 10. It can receive information transmitted via a wireless LAN or can receive broadcast radio waves. The information received by the receiver 57 is presented by the information presentation unit 51. An image corresponding to the information can be displayed in a display area of ​​the information presenting unit 51.

[0116] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together.

[0117] (Embodiment 2) In this embodiment, a display device, a light source, and a display device that can be applied to the electronic device of one embodiment of the present invention will be described. The imaging device and the like will be described.

[0118] <Display device configuration example 1> FIG. 8 is a block diagram illustrating a configuration example of a display device 810 which is a display device of one embodiment of the present invention. The display device 810 includes a layer 820 and a layer 830 laminated on the layer 820. 820 includes a gate driver circuit 821, a source driver circuit 822, and a circuit 840. The layer 830 has pixels 834, which are arranged in a matrix to form a pixel array. An interlayer insulator 833 is provided between the layer 820 and the layer 830. Note that the layer 820 may be laminated above the layer 830.

[0119] The circuit 840 is electrically connected to the source driver circuit 822. may be electrically connected to other circuits, etc.

[0120] The pixels 834 in the same row are electrically connected to the gate driver circuit 821 via the wiring 831. The pixels 834 in the same column are electrically connected to the source driver circuit 822 via the wiring 832. The wiring 831 functions as a scanning line, and the wiring 832 functions as a data line. It has all the functions.

[0121] In FIG. 8, the pixels 834 in one row are electrically connected by one wiring 831, and In this example, the pixels 834 are electrically connected to each other through a single wiring 832. One embodiment of the present invention is not limited to this. For example, when the pixels 834 in one row are connected to two or more wirings 831, Therefore, the pixels 834 in one column may be electrically connected to each other, or the pixels 834 in one column may be connected to each other by two or more wirings 832. That is, for example, one pixel 834 may be electrically connected to two or more scanning lines. It may be electrically connected to a scan line or to two or more data lines. Also, for example, one wiring 831 may be electrically connected to two or more rows of pixels 834. Alternatively, one wiring 832 may be electrically connected to two or more columns of pixels 834. That is, for example, one wiring 831 may be shared by two or more rows of pixels 834, or one The wiring 832 may be shared by two or more columns of pixels 834 .

[0122] The gate driver circuit 821 generates signals for controlling the operation of the pixels 834 and transmits the signals to the wiring 8 The source driver circuit 822 has a function of supplying the signal to the pixel 834 via the source driver circuit 822. The pixel 834 has a function of generating an image signal and supplying the signal to the pixel 834 via the wiring 832. The circuit 840 is, for example, a pixel driver circuit that generates an image signal from the source driver circuit 822. and a function of receiving image data from the source driver circuit 822 and supplying the received image data to the source driver circuit 822. The circuit 840 also includes a control circuit for generating a start pulse signal, a clock signal, etc. In addition, the circuit 840 includes a gate driver circuit 821 and a source It may be a circuit having a function that the driver circuit 822 does not have.

[0123] The pixel array 833 corresponds to the image signal supplied to the pixel 834 by the source driver circuit 822. Specifically, the image display device has a function of displaying an image corresponding to the image signal. An image is displayed on the pixel array 833 by emitting light from 834 .

[0124] In FIG. 8, the positional relationship between the layer 820 and the layer 830 is indicated by a dashed line and a hollow circle. The open circle of layer 820 and the open circle of layer 830, which are connected by a dashed line, overlap each other. Similar notations are used in other figures.

[0125] The display device 810 includes a gate driver circuit 821 and a source driver circuit 822 provided in a layer 820. The circuit 822 has an area overlapping with the pixel array 833. For example, the gate driver circuit The circuit 821 and the source driver circuit 822 have an area overlapping with the pixel 834. The light receiving driver circuit 821 and the source driver circuit 822 are connected to the pixel array 833. By stacking the display device 810 so as to have an overlapping area, the frame of the display device 810 can be narrowed. and the size can be reduced.

[0126] In addition, the gate driver circuit 821 and the source driver circuit 822 are not clearly separated and overlap. The region is referred to as region 823. By having region 823, The area occupied by the gate driver circuit 821 and the source driver circuit 822 can be reduced. Therefore, even if the area of ​​the pixel array 833 is small, the gate driver circuit 8 21 and the source driver circuit 822 are provided without protruding from the pixel array 833. Alternatively, the pixel array of the gate driver circuit 821 and the source driver circuit 822 can be The area of ​​the region that does not overlap with the ray 833 can be reduced. The frame can be made narrower and the size can be reduced compared to when no such filter is provided.

[0127] The circuit 840 can be provided so as not to overlap with the pixel array 833. 40 may be provided to have an area overlapping with the pixel array 833.

[0128] In FIG. 8, a layer 820 includes a gate driver circuit 821 and a source driver circuit 822. In the illustrated example, one pixel array 833 is provided in layer 830. In other words, the pixel array 833 may be provided in the layer 830. 9 shows a variation of the configuration shown in FIG. 8, in which a layer 830 has three rows and three columns of pixels. 8 shows an example of the configuration of the display device 810 when the array 833 is provided. In the pixel array 830, a pixel array 833 having two rows and two columns may be provided, or a pixel array having four rows and four columns or more may be provided. In addition, the row of the pixel array 833 provided in the layer 830 may be The number of pixels and the number of columns may be different. In the display device 810 having the configuration shown in FIG. The pixel array 833 can be used to display an image.

[0129] In FIG. 9, the wiring 831 and the wiring 832 are omitted for clarity of the drawing. A display device 810 having the configuration shown in FIG. Although the electrical connections of the circuit 840 are omitted, in reality, the source driver circuit 8 22. In other figures, some components are shown in the same manner as in FIG. etc. may be omitted.

[0130] The layer 820 includes a gate driver circuit 821 and a source driver circuit 822, for example, In this case, the gate driver circuits 821 can be provided in the same number as the arrays 833. a pixel array 833 in which pixels 834 to which a gate driver circuit 821 supplies a signal are provided; The source driver circuit 822 can be provided so as to overlap the source driver. The driver circuit 822 overlaps a pixel array 833 in which pixels 834 that supply image signals are provided. It can be set up as follows.

[0131] A plurality of pixel arrays 833 are provided, and gate driver circuits 821 and source driver circuits 821 and By providing the driver circuit 822, the number of pixels 834 provided in one pixel array 833 is The number of gate driver circuits 821 can be reduced. The source driver circuits 822 can be operated in parallel. For example, an image signal corresponding to one frame of an image can be input to eight pixels. Therefore, the time required to write data to the pixel 34 can be shortened. This can shorten the time required for the display device 810 to operate at a high speed. The number of pixels 834 in the display device 810 can be increased, and the resolution of the display device 810 can be improved. In addition, the display device according to one embodiment of the present invention can display The image definition is improved by ensuring that the gate driver circuit and source driver circuit do not overlap with the pixel array. The resolution of the image that can be displayed by the display device of the present invention can be further improved. In addition, the clock frequency can be reduced, thereby reducing the power consumption of the display device 810. It is possible.

[0132] Here, the gate driver circuit and the source driver circuit are configured not to overlap with the pixel array. In this case, the gate driver circuit and the source driver circuit are provided, for example, on the periphery of the pixel array. In this case, providing a pixel array with more than two rows and two columns is On the other hand, in the display device 810, By providing the circuit and the source driver circuit on a layer different from the layer on which the pixel array is provided, Therefore, it can be provided so as to have an area overlapping with the pixel array, as shown in FIG. In other words, the display device 810 can have a pixel array of more than two rows and two columns. Five or more gate driver circuits and five or more source driver circuits can be provided. .

[0133] As described above, the display device 810 includes a gate driver circuit and a source driver circuit. For example, the display device can be operated at a higher speed than a display device having a configuration in which the display device does not overlap with the display device. The definition of the device 810 is increased by the gate driver circuitry and the source driver circuitry overlapping the pixel array. For example, the pixel density of the display device 810 can be increased to 1 000ppi or more, 5000ppi or more, 10000 ppi. Therefore, the display device 810 can display a high-quality image with little graininess. It is possible to display highly realistic images.

[0134] The resolution of the image that can be displayed by the display device 810 is also controlled by the gate driver circuit The display device can be configured so that the source driver circuit does not overlap with the pixel array. For example, the display device 810 can support 4K2K, 8K It is possible to display images with a resolution of 4K or higher. For example, the size of the display area of ​​the display device 810 can be set to 8 inches or less. It is possible.

[0135] In addition, a plurality of source driver circuits 822 and the like are provided on the layer 820, and a pixel array 8 Even if a plurality of 33 are provided, the same is true for the display device 810 as in the case shown in FIG. The number of circuits 840 that can be used can be one. Therefore, as shown in FIG. 40 can be provided so as not to overlap any of the pixel arrays 833. The path 840 may be provided to have an overlapping area with any of the pixel arrays 833 .

[0136] FIG. 9 shows a configuration example in which the number of gate driver circuits 821 is the same as that of pixel arrays 833. However, one embodiment of the present invention is not limited to this. In the case where the number of gate driver circuits 821 is the same as the number of columns of the pixel array 833, The display device 810 shown in FIG. 10 has three columns of pixel arrays. Since the array 833 is provided, three gate driver circuits 821 are provided. In addition, a pixel array 833 having three rows is provided, and the pixel array 833 having three rows and one column corresponds to one gate. The input driver circuit 821 is shared.

[0137] FIG. 11 shows a modification of the configuration shown in FIG. 9, in which a plurality of pixel arrays 833 are provided, and 1 shows a configuration example of a display device 810 in which one driver circuit 821 is provided. In the display device 810 having the configuration shown in FIG. 1, a pixel array 833 having 3 rows and 3 columns is connected to one gate driver. In the display device 810 having the configuration shown in FIG. The driver circuit 821 may be configured not to overlap with the pixel array 833 .

[0138] Although not shown, the source driver circuits 822 are also provided in the same number as the pixel arrays 833. The number of source driver circuits 822 included in the display device 810 is not necessarily limited to the number of The number of pixels may be greater than or less than the number of pixel arrays 833 provided in the device 810.

[0139] FIG. 8 shows a configuration example in which a circuit 840 is provided on a layer 820. FIG. 12 shows a variation of the configuration shown in FIG. 8, in which a circuit 840 is provided on the layer 830. 8 shows a configuration example of a display device 810 in which a circuit 840 is provided. The elements may be distributed across layers 820 and 830.

[0140] FIG. 8 shows an example of a configuration in which one pixel array 833 and one gate driver circuit are provided. However, the number of gate driver circuits may be greater than the number of pixel arrays 833. 8, in which two gate driver circuits are provided for one pixel array 833. Display device when (gate driver circuit 821a, gate driver circuit 821b) are provided 8 shows an example of the configuration of 810.

[0141] In the display device 810 having the configuration shown in FIG. 13, the pixels 834 in the odd-numbered rows are connected to the line 831a. The pixels 834 in the even-numbered rows are electrically connected to the gate driver circuit 821a through the wiring 83. 1b. The wiring 831a and the gate driver circuit 821b are electrically connected to each other. The wiring 831b has a function as a scan line, similar to the wiring 831.

[0142] The gate driver circuit 821a generates signals for controlling the operation of the pixels 834 in the odd-numbered rows. The gate driver 831a has a function of supplying the signal to the pixel 834 through the wiring 831a. The driver circuit 821b generates signals for controlling the operation of the pixels 834 in the even-numbered rows, and The signal is supplied to the pixel 834 via 831b.

[0143] The gate driver circuit 821a and the gate driver circuit 821b are 21, it has an area overlapping with the pixel array 833. For example, The circuit 821a and the gate driver circuit 821b are the same as the gate driver circuit 821. The gate driver circuit 821a has an area overlapping with the source driver 834. The driver circuit 822 is not clearly separated from the driver circuit 822, and has an overlapping region 823a. The gate driver circuit 821b is not clearly separated from the source driver circuit 822 and overlaps with it. It has a region 823b.

[0144] In the display device 810 having the configuration shown in FIG. 13, the gate driver circuit 821a is operated to After writing image signals to all pixels 834 in the row, the gate driver circuit 821b is operated. By doing so, image signals can be written to all the pixels 834 in the even-numbered rows. The display device 810 having the configuration shown in FIG. By operating in an interlaced manner, the operation of the display device 810 can be accelerated, and In addition, the number of image signals written in one frame period can be increased. The number of elements 834 is set to half that when the display device 810 is operated in the progressive mode. Therefore, when the display device 810 is operated in an interlaced manner, In this case, the clock frequency can be made smaller than when the progressive method is used. Therefore, the power consumption of the display device 810 can be reduced.

[0145] FIG. 8 shows a configuration example in which only one end of the wiring 832 is connected to the source driver circuit 822. However, the wiring 832 may be connected to the source driver circuit 822 at multiple locations. FIG. 14 shows a case where the source driver circuit 822 is connected to both ends of the wiring 832. 8 shows an example of the configuration of a display device 810. A plurality of wirings 832 are connected to a source driver circuit 82. By connecting to 2, signal delays caused by wiring resistance, parasitic capacitance, etc. can be suppressed. This allows the operation of the display device 810 to be faster.

[0146] In addition to the one end and the other end of the wiring 832, the other part of the wiring 832 is connected to the source driver circuit. For example, the center of the wiring 832 may be connected to the source driver circuit. The connection point between the wiring 832 and the source driver circuit 822 may be By increasing the number of locations, signal delays and the like can be further suppressed, and the display device 810 The operation can be further accelerated. The central portion is connected to the source driver circuit 822, and the other end of the wiring 832 is connected to the source driver It does not have to be connected to the circuit 822 .

[0147] In addition, when one source driver circuit 822 is connected to a plurality of points of the wiring 832, 14, the area occupied by the source driver circuit 822 becomes large. However, the source driver circuit 822 is stacked so as to have an area overlapping with the pixel array 833. Since the display device 810 is provided with the above-mentioned structure, it is possible to prevent the display device 810 from becoming large. In FIG. 14, the entire gate driver circuit 821 is clearly separated from the source driver circuit 822. Although they are not separated but overlap, one source driver circuit 822 is connected to multiple points of the wiring 832. Even if the gate driver circuit 821 is connected to the source driver circuit It may be configured to overlap with 822.

[0148] Note that the wiring 831 may be connected to one gate driver circuit 821 at multiple locations. This also makes it possible to suppress signal delays and the like, and to speed up the operation of the display device 810. In such a configuration, the occupied area is the same as that of the source driver circuit 822 shown in FIG. Although the product is large, the gate driver circuit 821 has an overlapping area with the pixel array 833. Since the display devices 810 are stacked in this manner, the display device 810 can be prevented from becoming large. can.

[0149] The configurations of the display device 810 shown in FIGS. 8 to 14 can be combined as appropriate. For example, In this case, the configuration shown in FIG. 9 can be combined with the configuration shown in FIG. For example, a plurality of pixel arrays 833 are provided, and a gate driver circuit is provided for each pixel array. The number of source driver circuits 822 is doubled to the number of pixel arrays 833. It is possible to provide a configuration in which

[0150] <Configuration Example of Circuit 840 and Source Driver Circuit 822> FIG. 15 is a block diagram showing an example of the configuration of the circuit 840 and the source driver circuit 822. As shown in FIG. Although only one source driver circuit 822 is shown in FIG. 15, the circuit 840 may include multiple The pixel electrodes 821 and 822 may be electrically connected to the source driver circuit 822 .

[0151] The circuit 840 includes a receiving circuit 841, a serial-to-parallel conversion circuit 842, and a potential generating circuit 8 The source driver circuit 822 includes a buffer circuit 843 and a shift register 46a. a first transistor circuit 844, a latch circuit 845, a pass transistor logic circuit 846b, and an Here, the potential generating circuit 846a and the pass transistor logic A digital-to-analog conversion circuit (hereinafter, a DA conversion circuit) 846 is formed by the clock circuit 846b. Configure.

[0152] The receiving circuit 841 is electrically connected to a serial-parallel conversion circuit 842, and The shift converter circuit 842 is electrically connected to a buffer circuit 843. The buffer circuit 843 is The shift register is electrically connected to the shift register circuit 844 and the latch circuit 845. The circuit 844 is electrically connected to the latch circuit 845. The latch circuit 845 and the potential generating circuit The pass transistor logic circuit 846a is electrically connected to the pass transistor logic circuit 846b. The transistor logic circuit 846b is electrically connected to an input terminal of an amplifier circuit 847. The output terminal of the loop circuit 847 is electrically connected to the wiring 832 .

[0153] The receiving circuit 841 receives image data on which the image signal generated by the source driver circuit 822 is based. The image data may be single-ended image data. The receiving circuit 841 is an LVDS (Low Voltage Differential When receiving image data using a data transmission signal such as IEEE 802.11b (EIA Signaling), It may also have a function of converting to a signal standard that can be processed internally.

[0154] The serial-to-parallel conversion circuit 842 converts the single-ended image signal output from the receiving circuit 841 into The serial-to-parallel conversion circuit 842 has a function of converting data into parallel data. By providing the circuit 840, image data and the like can be transmitted to the source driver circuit 822 and the like. Even if the load during transmission is large, image data and the like can be transmitted from the circuit 840 to the source driver circuit 822 and the like. It will be possible to transmit.

[0155] The buffer circuit 843 may be, for example, a unity gain buffer. The line 843 receives the same image data as that output from the serial-parallel conversion circuit 842. The source driver circuit 822 has a function of outputting a buffer circuit 843. As a result, the potential corresponding to the image data output from the serial-parallel conversion circuit 842 is When the signal is transmitted from the circuit 840 to the source driver circuit 822, the signal is reduced due to wiring resistance or the like. This allows the source driver to be restored from the circuit 840. Even if the load when transmitting image data to the source driver circuit 822 is large, 22 and the like.

[0156] The shift register circuit 844 generates a signal for controlling the operation of the latch circuit 845. The latch circuit 845 has a function of holding or storing the image data output by the buffer circuit 843. The latch circuit 845 has a function of holding or outputting image data. The operation to be performed is selected based on a signal supplied from the shift register circuit 844. do.

[0157] The DA conversion circuit 846 converts the digital image data output by the latch circuit 845 into an analog The potential generating circuit 846a has a function of converting the image data that can be DA converted into an image signal. The potentials corresponding to the number of bits of the data are generated and supplied to the pass transistor logic circuit 846b. For example, the DA conversion circuit 846 converts 8-bit image data into analog When the potential generating circuit 846a has a function of converting the potentials into image signals, the potential generating circuits 846a are different in size. It is possible to generate 256 different electrical potentials.

[0158] The pass transistor logic circuit 846b receives the image data from the latch circuit 845, Based on the digital value of the received image data, the potential generating circuit 846a generates a potential. For example, the larger the digital value of the image data, the more the past The potential output by the transistor logic circuit 846b can be increased. The potential output from the resistor logic circuit 846b can be used as an image signal.

[0159] As shown in FIG. 15, in the display device 810, the circuit constituting the DA conversion circuit 846 is The driver circuit 822 and the circuit 840 may be provided separately. In addition, a pass transistor logic circuit such as the pass transistor logic circuit 846b can be provided for each source driver circuit. A circuit such as a potential generating circuit 846a is preferably provided in the source driver circuit 822. Circuits that do not need to be provided for each source driver circuit may be provided in the circuit 840. As a result, for example, all of the circuits constituting the DA conversion circuit 846 can be connected to the source driver circuit. The area occupied by the source driver circuit 822 can be made smaller than that in the case where the source driver circuit 822 is provided on the Therefore, the number of source driver circuits 822 provided in the layer 820 can be increased. Therefore, the number of pixel arrays 833 provided in the layer 830 can be increased, and the display device 8 10 faster operation, lower power consumption, improved definition, increased resolution of images that can be displayed, etc. Here, in the circuit other than the DA conversion circuit 846, The components can be provided in a distributed manner between the source driver circuit 822 and the circuit 840. This is possible.

[0160] As shown in FIG. 15, when the circuits constituting the DA conversion circuit 846 are provided in a distributed manner between the source driver circuit 8 22 and the circuit 840, the display device 810 can have, for example, one potential generation circuit 846a and the same number of pass transistor logic circuits 846b as the source driver circuit 822.

[0161] The amplifier circuit 847 has the function of amplifying the image signal output from the pass transistor logic circuit 846b and outputting it to the wiring 832 having the function as a data line. By providing the amplifier circuit 8 47, the image signal can be stably supplied to the pixel 834. As the amplifier circuit 8 47, a voltage follower circuit having an operational amplifier or the like can be applied. When a circuit having a differential input circuit is used as the amplifier circuit, the offset voltage of the differential input circuit is preferably made as close to 0V as possible.

[0162] In addition to the reception circuit 841, the serial - parallel conversion circuit 842, and the potential generation circuit 846a, the circuit 840 can be provided with various circuits. For example, the circuit 840 can be provided with a control circuit having the function of generating a start pulse signal, a clock signal, etc. This is possible.

[0163] <Configuration Example of DA Conversion Circuit 846> FIG. 16 is a circuit diagram showing a configuration example of the potential generation circuit 846a and the pass transistor logic circuit 846b that constitute the DA conversion circuit 846. The DA conversion circuit having the configuration shown in FIG. 16 846 is 8-bit image data D <1> Image data D <8> Analog image signal The number can be converted to IS.

[0164] In this specification, for example, the first bit of image data D is image data D <1> And write The second bit of image data D is <2> The 8th bit of the image is written as Image data D is image data D <8> This is indicated as follows.

[0165] The potential generating circuit 846a having the configuration shown in FIG. 16 includes resistor elements 848[1] to 848[2].

[0256] These are connected in series. It can be an anti-string type DA conversion circuit.

[0166] A potential VDD can be supplied to one terminal of the resistor element 848[1]. A potential VSS can be supplied to one terminal of 848

[0256] . A potential of different magnitude is output from each terminal of the resistor element 848[1] to the resistor element 848

[0256] . V 1 ~V 256 In FIG. 16, the potential V 1 Let us assume that the potential is VDD. 8 shows an example of the configuration of the potential generating circuit 846a when the potential V 256 Let us assume that the potential is VSS. Alternatively, the resistor element 848

[0256] may not be provided, and the potential V 1 potential VD D, potential V 256 may be set as the potential VSS.

[0167] In this specification, the potential VDD may be, for example, a high potential, and the potential VSS may be, for example, The low potential may be, for example, the ground potential. In addition, the high potential is a potential higher than the low potential, and if the low potential is the ground potential, it is considered to be a positive potential. It is possible.

[0168] The pass transistor logic circuit 846b having the configuration shown in FIG. Specifically, the pass transistor logic circuit 846b is composed of one stage Each of these is electrically branched into two paths, for a total of 256 paths. In other words, the pass transistors 849 are electrically connected in a tournament fashion. The source or drain of the eighth-stage pass transistor 849, which is the final stage, An analog image signal IS can be output from one side.

[0169] For example, image data D <1> can be fed to the first stage pass transistor 849, Image data D <2> can be fed to the second stage pass transistor 849, T D <8> The pixel value can be supplied to the eighth-stage pass transistor 849. The potential of the image signal IS is changed to a potential V 1 or potential V 256 Either Therefore, digital image data is converted into an analog image signal IS. It is possible.

[0170] In addition, the pass transistor logic circuit 846b shown in FIG. A p-channel type pass transistor 849 and a p-channel type pass transistor 849 are both provided. However, a configuration in which only an n-channel pass transistor 849 is provided may also be used. For example, image data D <1> Image data D <8> In addition, these complementary data are The gate of the pass transistor logic circuit 846b is supplied with The pass transistors 849 provided in the can.

[0171] The configuration shown in FIG. 16 has a function of performing DA conversion on image data D with a bit number other than 8 bits. For example, the potential generating circuit 846a may be provided with a resistor The elements 848 are provided in a number of 1024 or 1023, and the pass transistor logic circuit 846b By providing 10 stages of pass transistors 849, the DA conversion circuit 846 can output a 10-bit It can have a function of converting image data D into digital to digital.

[0172] <Configuration Example of Gate Driver Circuit 821> 17 is a block diagram showing a configuration example of the gate driver circuit 821. The circuit 821 is a shift register circuit composed of a plurality of set-reset flip-flops. The shift register circuit SR includes a wiring 831 that functions as a scan line. The wiring 831 is electrically connected to the semiconductor laser 820 and has a function of outputting a signal to the wiring 831 .

[0173] The signal RES is a reset signal. By setting the signal RES to a high potential, for example, the shift register The output of the SR circuit can be set to a low potential. The signal SP is a start pulse signal. By inputting the signal to the gate driver circuit 821, the shift register circuit S R can start the shift operation. The signal PWC is a pulse width control signal. The soft resistor circuit SR has a function of controlling the pulse width of a signal output to the wiring 831. Signals CLK[1], CLK[2], CLK[3], and CLK[4] are clocks. The shift register circuit SR includes signals CLK[1] to CLK Of the four, for example, two signals can be input.

[0174] In addition, the configuration shown in FIG. 17 includes a wiring 831 electrically connected to the shift register circuit SR. By using other wiring, the shift register circuit 8 of the source driver circuit 822 This can also be applied to 44 etc.

[0175] FIG. 18A shows a signal input to the shift register circuit SR and a 18A is a diagram showing a signal output from R. Here, in FIG. 18A, 13 shows a case where signals CLK[1] and CLK[3] are input.

[0176] The signal FO is an output signal, for example, a signal output to a wiring 831. is a shift signal, and is the signal LIN input to the next stage shift register circuit SR. As described above, among the signals shown in FIG. 18A, the signal RES, the signal PWC, and the signal CLK [1], signal CLK[3], and signal LIN are signals input to the shift register circuit SR. The signal FO and the signal SROUT are signals output from the shift register circuit SR. be.

[0177] FIG. 18B shows a shift register circuit SR whose input and output signals are the signals shown in FIG. 18A. 1 is a circuit diagram showing a configuration example of a shift register circuit SR. The pixel circuit includes a resistor 863 and capacitors 864 to 866.

[0178] One of the source and drain of the transistor 851 is connected to the source or drain of the transistor 852. one of the drains of the transistor 856 and the source or drain of the transistor 85 The gate of the transistor 852 is electrically connected to one of the source and drain of the transistor 852. is a source or drain of the transistor 853, a source or drain of the transistor 854, One of the drains, one of the source or drain of the transistor 855, and the transistor 858 a gate of the transistor 861, and one electrode of the capacitor 864. The other of the source and drain of the transistor 856 is connected to a transistor 857. The gate of the transistor 861 is electrically connected to one electrode of the capacitor 865. The other of the source and drain of the transistor 860 and the capacitor 866 One of the source and drain electrodes of the transistor 860 is electrically connected to the On the other hand, one of the source or drain of the transistor 861, the gate of the transistor 862, and the other electrode of the capacitor 866 .

[0179] A signal LIN is input to the gate of the transistor 851 and the gate of the transistor 855. The signal CLK[3] is input to the gate of the transistor 853. A signal RES is input to the gate of the transistor 854. A signal CLK[1] is input to one of the inputs. The other input receives a signal PWC.

[0180] One of the source or drain of the transistor 862 and the source or drain of the transistor 863 One of the drains is electrically connected to the wiring 831, and as described above, The other of the source and drain of the transistor 857 is connected to the transistor A signal S is output from one of the source and drain of the capacitor 858 and the other electrode of the capacitor element 865. ROUT is output.

[0181] The other of the source or drain of the transistor 851 and the source or drain of the transistor 853 the other input of the transistor 854, the other source or drain of the transistor 856, the gate of transistor 859, and the source or drain of transistor 862. The other of the source and drain of the transistor 852 is supplied with a potential VDD. The other of the source or drain of the transistor 855 and the other of the source or drain of the transistor 858 the other of the source or drain of the transistor 861, the source or drain of the transistor 863, The other of the source and drain electrodes and the other electrode of the capacitor 864 are supplied with a potential VSS. .

[0182] The transistor 863 is a bias transistor and functions as a constant current source. A bias potential Vbias can be supplied to the gate of the transistor 863. can.

[0183] The transistor 862 and the transistor 863 form a source follower circuit 867. By providing a source follower circuit 867 in the shift register circuit SR, Even if signal attenuation occurs due to wiring resistance, parasitic capacitance, etc. inside the register circuit SR, This can suppress the potential drop of the signal FO caused by the above. The source follower circuit 867 can speed up the operation of the buffer 810. As long as the circuit has the function of the source follower circuit, a circuit other than the source follower circuit may be used.

[0184] <Example of configuration of area 823> FIG. 19 shows an area where the gate driver circuit 821 and the source driver circuit 822 overlap. 19 is a diagram showing a configuration example of a region 823. As shown in FIG. A region having elements constituting a source driver circuit 821 and a region having elements constituting a source driver circuit 822. In FIG. 19, the gate driver circuit A transistor 871 is shown as an element constituting the source driver circuit 821. A transistor 872 is shown as a component that constitutes this.

[0185] In FIG. 19, the regions having elements constituting the gate driver circuit 821 are arranged in the first and third rows. A region having elements constituting a source driver circuit 822 is provided in the second and fourth rows. In the region 823, the gate driver circuit 821 is configured as Dummy elements are provided between each of the regions having elements. Dummy elements are provided between each region having elements constituting the transistor 2. Dummy transistors are provided on all four sides of the transistor 871 and on all four sides of the transistor 872 as dummy elements. 8 shows an example of the configuration of the region 823 when a transistor 873 is provided.

[0186] By providing a dummy element such as a dummy transistor 873 in the region 823, the dummy The element absorbs impurities, and the impurities diffuse into the transistors 871 and 872. This can prevent the transistor 871 and the transistor 87 2, the reliability of the display device 810 can be improved. In FIG. 19, the transistor 871, the transistor 872, and the dummy transistor The resistors 873 are arranged in a matrix, but they can be used even if they are not arranged in a matrix. good.

[0187] 20 is a top view showing an example of the configuration of an area 870 that is a part of the area 823. As shown in FIG. 20, region 870 contains one transistor 871 and one transistor 872. As shown in FIG. 20, one transistor is provided and two dummy transistors 873 are provided. The sintered body 871 includes a channel forming region 110, a source region 111, a drain region 112, and The gate electrode 1 is formed so as to have a region overlapping with the channel forming region 110. Has 13.

[0188] In FIG. 20, components such as a gate insulator are omitted. The hole formation region, the source region, and the drain region are not clearly separated.

[0189] An opening 114 is provided in the source region 111, and the source region 111 is The drain region 112 is electrically connected to a wiring 115. An opening 116 is provided in the drain region 112. The drain region 112 is electrically connected to a wiring 117 through the opening 116 .

[0190] An opening 118 is provided in the gate electrode 113, and the gate electrode 113 is The wiring 115 is electrically connected to the wiring 121. The wiring 115 is provided with an opening 119. The wiring 115 is electrically connected to the wiring 122 via the portion 119. An opening 120 is provided, and the wiring 117 is electrically connected to the wiring 123 through the opening 120. That is, the source region 111 is electrically connected to the wiring 122 via the wiring 115. The drain region 112 is electrically connected to a wiring 123 via a wiring 117 .

[0191] The transistor 872 includes a channel forming region 130, a source region 131, and a drain region The gate electrode 132 is formed so as to have an area overlapping with the channel forming region 130. It has a contact electrode 133.

[0192] An opening 134 is provided in the source region 131, and the source region 131 is The drain region 132 is electrically connected to a wiring 135. An opening 136 is provided in the drain region 132. The drain region 132 is electrically connected to a wiring 137 through the opening 136 .

[0193] An opening 138 is provided in the gate electrode 133, and the gate electrode 133 is The wiring 135 is electrically connected to the wiring 141. The wiring 135 is provided with an opening 139. The wiring 135 is electrically connected to the wiring 142 via the portion 139. An opening 140 is provided, and the wiring 137 is electrically connected to the wiring 143 through the opening 140. That is, the source region 131 is electrically connected to the wiring 142 via the wiring 135. The drain region 132 is electrically connected to a wiring 143 via a wiring 137 .

[0194] The channel formation region 110 and the channel formation region 130 are provided in the same layer. In addition, the source region 111 and the drain region 112, and the source region 131 The gate electrode and the drain region 132 can be provided in the same layer. The wiring 113 and the gate electrode 133 can be provided in the same layer. The wiring 15 and the wiring 117, and the wiring 135 and the wiring 137 may be provided in the same layer. That is, the transistor 871 and the transistor 872 are provided in the same layer. As a result, the transistor 871 and the transistor 872 can be The manufacturing process of the display device 810 can be simplified compared to the case where the display device 810 is provided in a different layer. The device 810 can be low cost.

[0195] A wiring electrically connected to a transistor 871 that constitutes the gate driver circuit 821 The wirings 121 to 123 are provided in the same layer. The wirings 141 to 14 are electrically connected to the transistor 872 included in the transistor 822. The wirings 121 to 123 are provided in the same layer. The gate driver circuit 82 is provided in a layer different from the wirings 41 to 143. 1 and a transistor 871 which is an element constituting the source driver circuit 822. It is possible to prevent an electrical short circuit between the transistor 871 and the transistor 872, which is a child of the transistor 871. Therefore, the gate driver circuit 821 and the source driver circuit 822 are not clearly separated but overlap each other. Even if the gate driver circuit 821 and the source driver circuit 822 have the same area, the gate driver circuit 821 and the source driver circuit 822 may malfunction. This can improve the reliability of the display device 810.

[0196] In this specification, the term "the same layer as A" refers to, for example, the same layer formed in the same process as A. By "layer" is meant a layer having one material.

[0197] In FIG. 20, wirings 141 to 143 are provided above wirings 121 to 123. The wiring 121 to the wiring 123 are arranged in a lower layer than the wiring 141 to the wiring 143. may be provided.

[0198] In addition, in FIG. 20, the wirings 121 to 123 extend in the horizontal direction, and the wirings 141 to 143 extend in the Although 43 shows a configuration in which the film extends in the vertical direction, one embodiment of the present invention is not limited to this. For example, the wirings 121 to 123 are extended vertically, and the wirings 141 to 143 are extended horizontally. Alternatively, the wirings 121 to 123 and the wirings 141 to Both of the wirings 143 may extend horizontally or vertically.

[0199] The dummy transistor 873 includes a semiconductor 151 and a conductor 152. The semiconductor 151 includes a transistor 871 and a transistor The conductor 1 can be formed in the same layer as the channel formation region of the transistor 872. 52 is formed in the same layer as the gate electrodes of the transistors 871 and 872. The dummy transistor 873 can be formed by forming a part of the semiconductor 151 or the conductor 152. It is also possible to adopt a configuration that does not have a side.

[0200] The semiconductor 151 and the conductor 152 are not electrically connected to other wirings or the like. A constant potential may be applied to the semiconductor 151 and / or the conductor 152. For example, A ground potential may be supplied.

[0201] <Configuration example of pixel 834> 21A to 21E show the colors of the pixels 834 provided in the display device 810. As shown in FIG. 21(A), a pixel having a function of emitting red light (R) is shown. a pixel 834 having a function of emitting green light (G), and a pixel 834 having a function of emitting blue light (B). A pixel 834 having such a function can be provided in the display device 810. As shown in FIG. 1, a pixel 834 has a function of emitting cyan (C) light, a pixel 835 has a function of emitting magenta (M) light, A pixel 834 having a function of emitting light, and a pixel 835 having a function of emitting yellow (Y) light 834 may be provided on the display device 810.

[0202] Alternatively, as shown in FIG. 21C, a pixel 834 having a function of emitting red light (R), A pixel 834 having a function of emitting color light (G), a pixel 835 having a function of emitting blue light (B), A pixel 834 having a function of emitting white light (W) is provided in the display device 810. Alternatively, as shown in FIG. 21(D), the LED may have a function of emitting red light (R). a pixel 834 having a function of emitting green light (G), a pixel 834 having a function of emitting blue light (B), A pixel 834 having a function of emitting yellow (Y) light is provided. Alternatively, as shown in FIG. 21E, a pixel 834 having a function of emitting light of blue (M), A pixel 834 having a function of emitting yellow (Y) light, and a pixel 834 having a function of emitting white light (W) A pixel 834 having the function of emitting light may be provided in the display device 810.

[0203] As shown in FIG. 21(C) and (E), a pixel 834 having a function of emitting white light (W) is By providing the display device 810 with the LED, the brightness of the displayed image can be increased. As shown in FIG. 21(D), by increasing the number of colors that the pixel 834 exhibits, intermediate colors can be reproduced. Since the display performance can be improved, the display quality can be improved.

[0204] As shown in FIG. 21(F), the display device 810 has a function of emitting red light (R). A pixel 834 having a function of emitting green light (G), and a pixel 834 having a function of emitting blue light (B) In addition to the pixel 834 having a function of emitting infrared light (IR), a pixel 83 21G, the display device 810 may have a cyan (C) a pixel 834 having a function of emitting magenta (M) light; In addition to the pixel 834 having the function of emitting yellow (Y) light, the pixel 834 has a function of emitting infrared light (IR). The display device 810 may have a pixel 834 having a function of outputting the light. In addition to the pixel 834 shown in (G), a pixel 834 having a function of emitting white light (W) is provided. This is also fine.

[0205] 22A and 22B are circuit diagrams showing an example of the configuration of the pixel 834. The pixel 834 includes a transistor 552, a transistor 554, and a capacitor 562. The light-emitting element 572 is, for example, an electroluminescent element. An EL element that uses a light-emitting diode between a pair of electrodes can be used. The EL element has a layer containing the compound (hereinafter, also referred to as an EL layer). When a potential difference larger than the threshold voltage is generated, holes are injected into the EL layer from the anode side and the cathode Electrons are injected from the electrode side. The injected electrons and holes recombine in the EL layer, forming a The contained luminescent material emits light.

[0206] EL elements are also classified according to whether the luminescent material is an organic compound or an inorganic compound. In general, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0207] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer. Then, the carriers (electrons and holes) recombine. This causes the light-emitting organic compound to form an excited state, and when the excited state returns to the ground state, Due to this mechanism, such a light-emitting element is called a current-excitation type light-emitting element. It is called.

[0208] In addition to the light-emitting compound, the EL layer may be formed by using a material having a high hole-injecting property and a material having a high hole-transporting property. , hole blocking material, material with high electron transporting properties, material with high electron injecting properties, or bipolar material (a substance having high electron-transporting and hole-transporting properties), or the like.

[0209] The EL layer can be produced by deposition (including vacuum deposition), transfer, printing, inkjet, coating, etc. The method can be formed as follows.

[0210] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements according to their element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor reaction that utilizes the donor and acceptor levels. Thin-film inorganic EL elements are made by sandwiching a light-emitting layer between dielectric layers. The structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner shell electron transition of metal ions. This is a localized emission method that uses

[0211] In order to extract light emitted from the light-emitting element, at least one of the pair of electrodes must be transparent. A transistor and a light emitting element are formed on the substrate, and light is emitted from the surface opposite the substrate. The top emission structure emits light from the top surface of the substrate. Bottom emission structure and dual emission structure that emits light from both sides There are light emitting elements having a light-emitting (emission) structure, and light emitting elements having any of the emission structures can be applied.

[0212] For light-emitting elements other than the light-emitting element 572, elements similar to the light-emitting element 572 are used. It is possible.

[0213] One of the source and the drain of the transistor 552 is electrically connected to the wiring 832. The other of the source and the drain of the transistor 552 is connected to one electrode of a capacitor 562. The other terminal of the capacitor 562 is electrically connected to the gate of the transistor 554. The gate of the transistor 552 is electrically connected to the wiring 835a. One of the source and drain of the transistor 554 is electrically connected to the The other of the source and drain of the transistor 554 is electrically connected to the line 835a. The other electrode of the light-emitting element 572 is electrically connected to the first electrode of the light-emitting element 572. The electrode is electrically connected to the wiring 835b. The potential VSS is supplied to the wiring 835a. The wiring 835a and the wiring 835b are supplied with a potential VDD. It has the function as follows.

[0214] In the pixel 834 having the configuration shown in FIG. 22A, the voltage supplied to the gate of the transistor 554 is The current flowing through the light emitting element 572 is controlled according to the position of the light emitting element 572. The light emission brightness is controlled.

[0215] FIG. 22B shows a pixel 834 having a different structure from that shown in FIG. In the pixel 834 having the configuration shown in FIG. 1, one of the source and drain of the transistor 552 is The other of the source and drain of the transistor 552 is electrically connected to the wiring 832. is electrically connected to one electrode of the capacitor 562 and the gate of the transistor 554. A gate of the transistor 552 is electrically connected to a wiring 831. One of the source and the drain of the transistor 554 is electrically connected to the wiring 835a. The other of the source and drain of the transistor 554 is connected to the other electrode of the capacitor 562, It is electrically connected to one electrode of the light-emitting element 572. The other electrode of the light-emitting element 572 is The wiring 835a is electrically connected to the wiring 835b. A potential VDD is supplied to the wiring 835a. The line 835b is supplied with the potential VSS.

[0216] FIG. 23A shows a configuration example of a pixel 834, which has a memory in addition to the configuration shown in FIG. 22A and FIG. 2(B) and the pixel 834 shown in FIG. A transistor 511, a transistor 513, a transistor 521, a capacitance element 515, a capacitance element The pixel 834 has a function as a scanning line. The wiring 831 is electrically connected to the wiring 831_1 and the wiring 831_2, and the data line As the wiring 832 having the function of This is being continued.

[0217] One of the source and the drain of the transistor 511 is electrically connected to the wiring 832_1. The other of the source and the drain of the transistor 511 is connected to one of the electrodes of the capacitor 515. The gate of the transistor 511 is electrically connected to the wiring 831_1. One of the source and the drain of the transistor 513 is connected to the wiring 832_2. The other of the source and the drain of the transistor 513 is electrically connected to a capacitor. The gate of the transistor 513 is electrically connected to the other electrode of the transistor 515. The other electrode of the capacitor 515 is electrically connected to the capacitor 517. One electrode of the capacitor 517 is electrically connected to one electrode of the transistor The source or drain of the transistor 521 is electrically connected to the gate of the transistor 521. One of the electrodes of the capacitor 517 is electrically connected to one of the electrodes of the light-emitting element 572. The electrode of the transistor 521 is electrically connected to the wiring 535. The other electrode of the light-emitting element 572 is electrically connected to the wiring 537. It is electrically connected to wiring 539.

[0218] In this specification, the voltage supplied to a light emitting element refers to the voltage applied to one electrode of the light emitting element. The potential difference between the potential applied to the first electrode and the potential applied to the other electrode of the light-emitting element is indicated.

[0219] The other of the source and the drain of the transistor 511 and one electrode of the capacitor 515 are The electrically connected node is referred to as a node N1. The other electrode of the transistor 521, one electrode of the capacitor 517, and the gate of the transistor 521 are electrically connected to each other. The node connected to the capacitor 517 is referred to as a node N2. A circuit including the transistor 521 and the light-emitting element 572 is referred to as a circuit 401. .

[0220] The wiring 535 is a common wiring for, for example, all pixels 834 provided in the display device 810. In this case, the potential supplied to the wiring 535 is a common potential. A constant potential can be supplied to the wiring 537 and the wiring 539. For example, A high potential can be supplied to the wiring 539, and a low potential can be supplied to the wiring 539. The wiring 537 and the wiring 539 function as a power supply line.

[0221] The transistor 521 has a function of controlling a current supplied to the light-emitting element 572. The capacitor 517 functions as a storage capacitor. The capacitor 517 may be omitted.

[0222] In FIG. 23A, the anode side of the light emitting element 572 is electrically connected to the transistor 521. However, the transistor 521 may be electrically connected to the cathode side. In this case, the potential value of the wiring 537 and the potential value of the wiring 539 can be changed as appropriate. Cut.

[0223] In the pixel 834, the transistor 511 is turned off to hold the potential of the node N1. In addition, when the transistor 513 is turned off, the potential of the node N2 Furthermore, the transistor 513 is turned off, and the transistor By writing a predetermined potential to the node N1 via the capacitance element 515, By this coupling, the potential of the node N2 can be changed according to the change in the potential of the node N1. do.

[0224] Here, the transistor 511 and the transistor 513 each have a metal oxide A transistor having an OS transistor can be used. The metal oxide can have a band gap of 2 eV or more, or 2.5 eV or more. Therefore, the OS transistor has an extremely small leakage current (off-state current) when it is off. Therefore, OS transistors are used as the transistors 511 and 513. By using this, the potentials of the nodes N1 and N2 can be maintained for a long period of time. Cut.

[0225] Metal oxides include In-M-Zn oxides (where the element M is aluminum, gallium, or zinc). Lithium, Tin, Copper, Vanadium, Beryllium, Boron, Titanium, Iron, Nickel, Germanium Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Tantalum , tungsten, magnesium, etc.) In particular, the element M is aluminum, gallium, yttrium, or tin. In addition, the metal oxides include indium oxide, zinc oxide, In-Ga oxide, and I n-Zn oxide, Ga-Zn oxide, or gallium oxide may also be used.

[0226] An example of how pixel 834 operates Next, an example of an operation method of the pixel 834 having the configuration shown in FIG. 23(A) will be described with reference to FIG. 23(B). FIG. 23B shows the timing of the operation of the pixel 834 having the configuration shown in FIG. In order to simplify the explanation, various resistances such as wiring resistance, The effects of parasitic capacitance of transistors and wiring, and threshold voltage of transistors, etc. are not taken into consideration. .

[0227] In the operation shown in FIG. 23B, one frame period is divided into a period T1 and a period T2. Period T1 is a period during which a potential is written to node N2, and period T2 is a period during which a potential is written to node N1. Between.

[0228] In the period T1, the transistors are turned on in both the wiring 831_1 and the wiring 831_2. A potential V ref Supply and distribute The line 832_2 has a potential of V w supplies.

[0229] The node N1 is supplied with a potential V ref Supplied The node N2 is supplied with a potential V w Therefore, the capacitance element 515 has a potential difference V w -V ref The state where It becomes.

[0230] Next, in a period T2, a potential that turns on the transistor 511 is supplied to the wiring 831_1. A potential that turns off the transistor 513 is supplied to the wiring 831_2. The wiring 832_1 has a potential V data and a predetermined constant potential is supplied to the wiring 832_2. Note that the potential of the wiring 832_2 may be floating.

[0231] The node N1 is supplied with a potential V data is supplied. At this time, The potential V data The potential of the node N2 changes according to That is, the potential V w The potential obtained by adding the potential dV is input. In FIG. 23(B), dV is shown as a positive value, but it can be a negative value. That is, the potential V data is the potential V ref It may be lower.

[0232] Here, the potential dV is roughly determined by the capacitance value of the capacitor 515 and the capacitance value of the circuit 401. When the capacitance of the capacitor 515 is sufficiently larger than the capacitance of the circuit 401, the potential d V is the potential difference V data -V ref The potential becomes close to

[0233] In this way, pixel 834 combines two types of data signals and supplies them to node N2. Therefore, the image displayed on the pixel array 833 can be generated by the internal pixel of the pixel 834. Here, one of the two types of data signals is the image signal described above. The other of the two types of data signals may be, for example, a correction signal. , potential V corresponding to the correction signal during period T1 w After the image signal is supplied to the node N2 during the period T2, The potential V corresponding to the signal data is supplied to node N1, The image to be displayed may be an image signal corrected by a correction signal. Not only the image signal but also the correction signal and the like are generated by the source driver circuit 822 of the display device 810. It can be generated.

[0234] In addition, in the pixel 834 having the configuration shown in FIG. 23A, the potential of the node N2 is connected to the wiring 832_1 and The potential can be set to a value exceeding the maximum potential that can be supplied to the wiring 832_2. A high voltage can be supplied to the light-emitting element 572. Specifically, for example, Therefore, when the light emitting element 572 is an organic EL element, The light emitting element 572 can be configured in a tandem structure, which will be described later. In addition, the external quantum efficiency can be improved. Therefore, the display device 810 can display a high-luminance image. In addition, the power consumption of the display device 810 can be reduced.

[0235] Note that the present invention is not limited to the circuit shown in FIG. 23A, and a transistor, a capacitor, or the like may be added. For example, a transistor and a capacitor may be added to the structure shown in FIG. By adding one each, the number of nodes that can hold a potential can be increased to three. In other words, there are other nodes that can hold the potential besides the node N1 and the node N2. One such transistor can be provided in the pixel 834. This can further increase the potential of the node N2. Therefore, a larger current can be passed through the light-emitting element 572. This can be done.

[0236] 24A to 24E are diagrams showing examples of the configuration of a circuit 401 different from that shown in FIG. 23A. The circuit 401 shown in FIG. 24A is similar to the circuit 401 shown in FIG. The pixel includes a capacitor 517, a transistor 521, and a light-emitting element 572.

[0237] In the circuit 401 having the configuration shown in FIG. 24A, a transistor 521 is connected to a node N2. The gate and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 1 is electrically connected to a wiring 537. The other of the source and drain of the capacitor 521 is electrically connected to the other electrode of the capacitor element 517. The other electrode of the capacitor 517 is electrically connected to one electrode of the light-emitting element 572. The other electrode of the light-emitting element 572 is electrically connected to a wiring 539.

[0238] The circuit 401 having the configuration shown in FIG. 24B has the same configuration as the circuit 401 having the configuration shown in FIG. The pixel includes a capacitor 517 , a transistor 521 , and a light-emitting element 572 .

[0239] In the circuit 401 having the configuration shown in FIG. 24B, a transistor 521 is connected to a node N2. The gate and one electrode of the capacitor 517 are electrically connected to each other. One electrode of the light-emitting element 572 is electrically connected to the wiring 537. The transistor 521 is electrically connected to one of the source and drain of the transistor 521. The other of the source and drain of the capacitor 521 is electrically connected to the other electrode of the capacitor element 517. The other electrode of the capacitor 517 is electrically connected to a wiring 539.

[0240] FIG. 24C shows a case where a transistor 525 is added to the circuit 401 shown in FIG. 5 shows an example of a configuration of a circuit 401 in which one of the source and drain of a transistor 525 is the other of the source and drain of the transistor 521 and the other electrode of the capacitor 517 The other of the source and the drain of the transistor 525 is electrically connected to The gate of the transistor 525 is electrically connected to one electrode of the transistor 572. The wiring 541 is electrically connected to the transistor 525. It functions as a scanning line.

[0241] In the pixel 834 having the circuit 401 shown in FIG. 24C, the potential of the node N2 is Even if the voltage exceeds the threshold voltage of the transistor 521, the transistor 525 must be turned on. Therefore, no current flows through the light emitting element 572. This can prevent malfunction of the display device 810. This can be done.

[0242] FIG. 24D shows a case where a transistor 527 is added to the circuit 401 shown in FIG. 5 shows an example of a configuration of the circuit 401. is electrically connected to the other of the source and the drain of the transistor 521. The other of the source and the drain of the transistor 527 is electrically connected to the wiring 543. The gate of the transistor 527 is electrically connected to the wiring 545. It has a function as a scanning line that controls the conduction of the transistor 527 .

[0243] The wiring 543 can be electrically connected to a source of a specific potential such as a reference potential. The wiring 543 functions as a power supply line. By supplying a specific potential to the other of the source or drain, an image signal is written to the pixel 834. This can stabilize the writing.

[0244] The wiring 543 can be electrically connected to the circuit 520. a source of a constant potential, a function for acquiring the electrical characteristics of the transistor 521, and a function for generating a correction signal; The present invention may have one or more of the following functions:

[0245] The circuit 401 shown in FIG. 24E includes a capacitor 517, a transistor 521, and a The light-emitting element 572 includes a transistor 529 and a light-emitting element 572 .

[0246] In the circuit 401 having the configuration shown in FIG. 24E, the transistor 521 is connected to the node N2. The gate and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 1 is electrically connected to a wiring 537. One of the source and drain of the transistor 529 is electrically connected to a wiring 543 .

[0247] The other electrode of the capacitor 517 is electrically connected to the other of the source and drain of the transistor 521. The other of the source and drain of the transistor 521 is connected to the transistor The source or drain of the transistor 529 is electrically connected to the other of the source or drain of the transistor 529. The other of the source and drain is electrically connected to one electrode of the light-emitting element 572 .

[0248] A gate of the transistor 529 is electrically connected to the wiring 831_1. The other electrode of the element 72 is electrically connected to a wiring 539 .

[0249] <Display device configuration example 2> FIG. 25 shows a configuration example of a display device 810 in which a pixel 834 has the configuration shown in FIG. 23(A). 25 is a block diagram showing a display device 810 having the configuration shown in FIG. In addition to the components of 810, a demultiplexer circuit 824 is provided. The circuitry 824 may be provided, for example, in layer 820, as shown in FIG. The number of multiplexer circuits 824 may be determined based on, for example, the number of columns of pixels 834 in the pixel array 833. The number of the members may be the same as the number of the members.

[0250] The gate driver circuit 821 is electrically connected to the pixel 834 via a wiring 831-1. The gate driver circuit 821 is electrically connected to the pixel 834 via the wiring 831-2. The wiring 831-1 and the wiring 831-2 function as scanning lines.

[0251] The source driver circuit 822 is electrically connected to an input terminal of a demultiplexer circuit 824. The first output terminal of the demultiplexer circuit 824 is connected to a picture input terminal via a wiring 832-1. The second output terminal of the demultiplexer circuit 824 is electrically connected to the element 834. The pixel 834 is electrically connected to the wiring 832-1 through the wiring 832-2. 832-2 functions as a data line.

[0252] The source driver circuit 822 and the demultiplexer circuit 824 are collectively referred to as a source The demultiplexer circuit 824 may be called a driver circuit. It may be included in the circuit 822.

[0253] In the display device 810 having the configuration shown in FIG. 25, a source driver circuit 822 receives an image signal S The demultiplexer circuit 824 has a function of generating the image signal S1 and the image signal S2. 2-1 to the pixel 834, and 25. The display device 834 has a function of supplying an image signal S2 to the pixel 834. If the device 810 is operated in the manner shown in FIG. data The image signal S1, and the potential V w is set to the potential corresponding to the image signal S2. This can be done.

[0254] As shown in FIG. 23B, a potential V w After supplying the potential V d ata By supplying w +dV”. Here, as mentioned above As shown above, the potential dV is the potential V data Therefore, the image signal S2 has a potential corresponding to In other words, the image signal S1 can be superimposed on the image signal S2. It is possible.

[0255] Potential V corresponding to image signal S1 data , and the potential V corresponding to the image signal S2 w Size is limited according to the withstand voltage of the source driver circuit 822. By overlapping the image signal S2, the source driver circuit 822 can output a potential An image corresponding to an image signal with a high potential can be displayed on the pixel array 833. This allows a large current to flow through the light emitting element 572, so that a high brightness image can be displayed on the pixel array 8. 33. Also, the brightness of the image that the pixel array 833 can display It is possible to expand the dynamic range, which is the range of sensitivity.

[0256] The image corresponding to the image signal S1 and the image corresponding to the image signal S2 may be the same or different. An image corresponding to the image signal S1 and an image corresponding to the image signal S2 may be If they are the same, the pixel array 833 stores the luminance of the image corresponding to the image signal S1 and the image It is possible to display an image with a higher brightness than the image corresponding to the signal S2.

[0257] FIG. 26 shows an example in which an image P1 corresponding to an image signal S1 is an image containing only text, and an image signal S2 In this example, the image P2 corresponding to the image 1 is an image including pictures and characters. By superimposing image P1 and image P2, the brightness of the characters can be increased. For example, Also, as shown in FIG. 23B, when a potential V w Written by After the potential of the node N2 is V data Since it changes depending on the image signal The potential V corresponding to S2 w When rewriting, the potential V of the image signal S1 data Rewrite On the other hand, the potential V data When rewriting, use the formula shown in Figure 23(B). The charge written to the node N2 at time T1 leaks from the transistor 513 etc. As long as the potential V w Therefore, in the case shown in Figure 26, At this point, the potential V data You can adjust the brightness of the characters by adjusting the value of do.

[0258] As described above, the potential V corresponding to the image signal S2 w When rewriting the image signal The potential V corresponding to S1 data On the other hand, the potential V data If you rewrite it, the potential V wTherefore, image P2 does not need to be rewritten. It is preferable to use an image that is rewritten less frequently than the image P1. Image P2 is not limited to an image including pictures and characters.

[0259] <Example of cross-sectional configuration of a display device> 27 is a cross-sectional view showing a configuration example of a display device 810. The display device 810 includes a substrate 701 and a substrate 705, and the substrate 701 and the substrate 705 are bonded together with a sealant 712. There are.

[0260] As the substrate 701, a single crystal semiconductor substrate such as a single crystal silicon substrate can be used. The substrate 701 may be a semiconductor substrate other than a single crystal semiconductor substrate.

[0261] The transistor 441 and the transistor 601 are provided on a substrate 701. The transistor 441 may be a transistor provided in the circuit 840. 01 denotes a transistor provided in a gate driver circuit 821 or a source driver circuit That is, the transistors 441 and 822 can be used as the transistors. The transistor 601 can be provided in a layer 820 shown in FIG.

[0262] The transistor 441 includes a conductor 443 that functions as a gate electrode and a gate insulator The insulator 445 has a function as a channel forming region, and a part of the substrate 701. The semiconductor region 447 includes a low-temperature region having a function as one of a source region and a drain region. A low resistance region having a function as the other of the resistance region 449a, the source region or the drain region The transistor 441 may be either a p-channel type or an n-channel type. That's fine too.

[0263] The transistor 441 is electrically isolated from other transistors by an element isolation layer 403. In FIG. 27, the transistor 441 and the transistor 601 are separated by the element isolation layer 403. The device isolation layer 403 is electrically isolated. Oxidation of Silicon (STI) method or Shallow Tre The insulating film can be formed by using a method such as an nch isolation method.

[0264] Here, the semiconductor region 447 of the transistor 441 shown in FIG. The side and top surfaces of the semiconductor region 447 are covered with the conductor 443 via the insulator 445. In FIG. 27, the conductor 443 covers the side surface of the semiconductor region 447. The conductor 443 may be made of a material that adjusts the work function. do.

[0265] A transistor having a convex semiconductor region such as the transistor 441 is formed by Since it uses a protruding portion, it can be called a fin transistor. Even if an insulator is provided on the upper portion and functions as a mask for forming a convex portion, In addition, although FIG. 27 shows a configuration in which a protrusion is formed by processing a part of the substrate 701, Alternatively, a semiconductor having a convex shape may be formed by processing an SOI substrate.

[0266] Note that the configuration of the transistor 441 shown in FIG. 27 is merely an example, and the present invention is not limited to this configuration. An appropriate configuration may be used depending on the circuit configuration or the operation method of the circuit. For example, transistor 4 41 may be a planar type transistor.

[0267] The transistor 601 can have a structure similar to that of the transistor 441 .

[0268] On the substrate 701, an element isolation layer 403, a transistor 441, and a transistor 60 are provided. In addition to insulator 1, insulator 405, insulator 407, insulator 409, and insulator 411 are provided. Conductors 451 in the insulators 405, 407, 409, and 411 Here, the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 are It can be done to the same extent.

[0269] An insulator 413 and an insulator 415 are provided on the conductor 451 and the insulator 411. In addition, the conductor 457 is embedded in the insulator 413 and the insulator 415. 7 can be provided in the same layer as the wirings 121 to 123 shown in FIG. Here, the height of the upper surface of the conductor 457 and the height of the upper surface of the insulator 415 can be made approximately the same.

[0270] An insulator 417 and an insulator 419 are provided on the conductor 457 and the insulator 415. In addition, the conductor 459 is embedded in the insulator 417 and the insulator 419. 9 can be provided in the same layer as the wirings 141 to 143 shown in FIG. Here, the height of the top surface of the conductor 459 and the height of the top surface of the insulator 419 can be made approximately the same.

[0271] An insulator 421 and an insulator 214 are provided on the conductor 459 and the insulator 419. A conductor 453 is embedded in the edge 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of the insulator 214 can be made approximately the same.

[0272] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductor 455 is buried in the insulating layer 216. The height of the faces can be made the same.

[0273] On the conductor 455 and on the insulator 216, an insulator 222, an insulator 224, an insulator 254, an insulator An edge 244, an insulator 280, an insulator 274, and an insulator 281 are provided. 2 in, insulator 224 in, insulator 254 in, insulator 244 in, insulator 280 in, insulator 27 in A conductor 305 is embedded in the insulating material 281 and the insulating material 282. The height of the surface and the height of the upper surface of the insulator 281 can be made approximately the same.

[0274] An insulator 361 is provided on the conductor 305 and on the insulator 281. The electric conductor 317 and the electric conductor 337 are embedded. , the height of the upper surface of the insulator 361 can be made to be approximately the same.

[0275] An insulator 363 is provided on the conductor 337 and on the insulator 361. The conductor 347, the conductor 353, the conductor 355, and the conductor 357 are embedded. , the height of the upper surfaces of the conductors 353, 355, and 357, and the upper surface of the insulator 363 The height can be made the same.

[0276] A connection electrode 76 is provided on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. 0 is provided. In addition, an anisotropic conductor 780 is provided so as to be electrically connected to the connection electrode 760. and a flexible printed circuit (FPC) is provided so as to be electrically connected to the anisotropic conductor 780. The FPC 716 is provided with a display Various signals and the like are supplied to the display device 810 from outside the device 810.

[0277] As shown in FIG. 27, the other of the source region or drain region of the transistor 441 The functional low resistance region 449b includes the conductor 451, the conductor 457, the conductor 459, and the conductor Conductor 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, The conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor 780 27, the connection electrode 760 is electrically connected to the FPC 716. Conductor 353 and conductor 347 are electrically connected to each other. 55 and the conductor 357 are shown, one embodiment of the present invention is not limited to these. There may be one conductor having a function of electrically connecting the electrode 760 and the conductor 347, The number of electrodes may be two, four or more. By providing a plurality of conductors having a connecting function, the contact resistance can be reduced.

[0278] A transistor 750 is provided on the insulator 214. The transistor 750 is 34. That is, the transistor 750 can be the transistor provided in FIG. The transistor 750 may be an OS transistor. The OS transistor has a feature of having an extremely low off-state current. This allows the retention time of image signals, etc. to be extended, reducing the frequency of refresh operations. As a result, the power consumption of the display device 810 can be reduced.

[0279] Insulator 254, insulator 244, insulator 280, insulator 274, and insulator 281 Conductor 301a and conductor 301b are embedded in the conductive layer. The conductor 301b is electrically connected to one of the source and drain of the transistor 750. The conductor is electrically connected to the other of the source and drain of the transistor 750. The height of the upper surface of the conductor 301a and the upper surface of the conductor 301b and the height of the upper surface of the insulator 281 can be approximately the same. Cut.

[0280] A conductor 311, a conductor 313, a conductor 331, a capacitance element 790, and a conductor The conductors 311 and 313 are transistors. The conductor 333 and the conductor 334 are electrically connected to the conductor 750 and function as wiring. 35 is electrically connected to the capacitance element 790. Here, the conductor 331 and the conductor 33 3, and the height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made approximately the same.

[0281] The conductor 341, the conductor 343, and the conductor 351 are embedded in the insulator 363. Thus, the height of the upper surface of the conductor 351 and the height of the upper surface of the insulator 363 can be made approximately the same.

[0282] Insulator 405, insulator 407, insulator 409, insulator 411, insulator 413, insulator 41 5, insulator 417, insulator 419, insulator 421, insulator 214, insulator 280, insulator 274, the insulator 281, the insulator 361, and the insulator 363 function as interlayer films. , and may function as a planarizing film that covers the uneven shapes underneath. For example, The top surface of the insulator 363 is polished by chemical mechanical polishing (CMP) to improve flatness. The material is flattened by a flattening process using a method such as Mechanical Polishing. It may be possible.

[0283] As shown in FIG. 27, the capacitance element 790 has a lower electrode 321 and an upper electrode 325. In addition, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. That is, the capacitance element 790 has an insulator 323 that functions as a dielectric sandwiched between a pair of electrodes. 27 shows an example in which a capacitor 790 is provided over an insulator 281. As shown, the capacitor 790 may be provided on an insulator different from the insulator 281 .

[0284] In FIG. 27, a conductor 301a, a conductor 301b, and a conductor 305 are formed in the same layer. In addition, the conductor 311, the conductor 313, the conductor 317, and the lower electrode In addition, the conductor 331, the conductor 333, and the electrode 321 are formed in the same layer. In this example, the conductor 335 and the conductor 337 are formed in the same layer. In this example, the conductive layer 341, the conductive layer 343, and the conductive layer 347 are formed in the same layer. In addition, the conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer. In this way, by forming multiple conductors on the same layer, Since the manufacturing process of the device 810 can be simplified, the display device 810 can be manufactured at a low cost. These may be formed in different layers, and different types of The material may include:

[0285] The display device 810 shown in FIG. 27 includes a light-emitting element 572. The light-emitting element 572 includes a conductor 7 The light emitting device 702 includes an EL layer 786 and a conductor 788. The conductor 788 is provided on the substrate 705 side. The conductor 772 is connected to the conductor 351 and the conductor 352 and functions as a common electrode. 41, the conductor 331, the conductor 313, and the conductor 301b, the transistor 750 The conductor 772 is electrically connected to the other of the source and drain of the insulator 363. The EL layer 786 is formed on the insulating layer 782 and functions as a pixel electrode. It has inorganic compounds such as quantum dots.

[0286] Examples of materials that can be used for the organic compound include fluorescent materials and phosphorescent materials. In addition, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include alloy-type quantum dot materials, core-shell-type quantum dot materials, and core-type quantum dot materials. can be done.

[0287] In the display device 810 shown in FIG. 27, an insulator 730 is provided on an insulator 363. The insulator 730 can cover part of the conductor 772. The light-transmitting conductor 788 is included in the light-transmitting element 572, and the light-emitting element 572 can be a top-emission type light-emitting element. The light emitting element 572 has a bottom emission structure that emits light to the conductor 772 side. or a dual emission structure in which light is emitted to both the conductor 772 and the conductor 788. You may do so.

[0288] The light emitting element 572 can have a microcavity structure, which will be described in detail later. This makes it possible to extract light of a specific color (for example, RGB) without providing a colored layer. In this case, the display device 810 can display in color. This makes it possible to suppress the absorption of light by the colored layer. It is possible to display a high-brightness image and reduce the power consumption of the display device 810. The EL layer 786 can be formed in an island shape for each pixel or in a stripe shape for each pixel row, that is, by coating. Even in the case of forming the insulating layer by dividing it, it is possible to adopt a configuration in which no colored layer is provided.

[0289] The light-shielding layer 738 is provided so as to have a region overlapping with the insulator 730. The light-shielding layer 738 is covered with an insulator 734. The gap is filled with a sealing layer 732 .

[0290] Furthermore, a structure 778 is provided between the insulator 730 and the EL layer 786. A structure 778 is provided between the body 730 and the insulator 734. The structure 778 is a columnar structure. It is a spacer and has a function of controlling the distance (cell gap) between the substrate 701 and the substrate 705. Note that a spherical spacer may be used as the structure 778.

[0291] On the substrate 705 side, a light-shielding layer 738 and an insulator 734 in contact therewith are provided. The layer 738 has a function of blocking light emitted from an adjacent region. , and has a function of blocking external light from reaching the transistor 750 and the like.

[0292] FIG. 28 shows a modification of the display device 810 shown in FIG. 27, which is different from the modification in that a colored layer 736 is provided. This is different from the display device 810 shown in FIG. 27. By providing the colored layer 736, the light emitting element 57 2, the color purity of the light extracted from the display device 810 can be improved. In addition, for example, all of the light emitting elements 57 of the display device 810 can be used to display high-quality images. 2 can be a light-emitting element that emits white light, so the EL layer 786 can be painted Therefore, the display device 810 can have high definition.

[0293] In FIG. 27 and FIG. 28, the transistor 441 and the transistor 601 are disposed in the substrate 701. The transistor 441 and the transistor 6 are provided so that a channel formation region is formed in the region. In the above embodiment, an OS transistor is stacked on the first insulating film 101. FIG. 29 shows a modification of FIG. 27, and FIG. 30 shows a modification of FIG. 28. 41 and transistor 601, but transistors 602 and 603 which are OS transistors. The transistor 750 is stacked on the transistor 603. 29 and 30. The display device 810 includes stacked OS transistors.

[0294] An insulator 613 and an insulator 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. A resistor 602 and a transistor 603 are provided. For example, a transistor or the like may be provided between the substrate 701 and the insulator 61. 27 and 28. A transistor having a similar configuration may be provided.

[0295] The transistor 602 may be a transistor provided in the circuit 840. The resistor 603 is a transistor or a source driver provided in the gate driver circuit 821. In other words, the transistor 6 can be a transistor provided in the driver circuit 822. The transistor 602 and the transistor 603 can be provided in a layer 820 shown in FIG. 12, when circuit 840 is provided on layer 830, transistor 60 2 may be provided on layer 830.

[0296] The transistor 602 and the transistor 603 are transistors having the same configuration as the transistor 750. The transistor 602 and the transistor 603 can be a transistor. An OS transistor having a different structure from the transistor 750 may be used.

[0297] In addition to the transistor 602 and the transistor 603, an insulator 616, Insulator 622, insulator 624, insulator 654, insulator 644, insulator 680, insulator 67 4, and an insulator 681 are provided. The conductor 461 is embedded in the insulator 674 and the insulator 681. The height of the upper surface of the body 461 and the height of the upper surface of the insulator 681 can be approximately the same.

[0298] An insulator 501 is provided on the conductor 461 and on the insulator 681. The conductor 463 is buried in the insulating layer 501. The height of the faces can be made the same.

[0299] An insulator 503 is provided on the conductor 463 and on the insulator 501. The conductor 465 is buried in the insulating layer 503. The height of the faces can be made the same.

[0300] An insulator 505 is provided over the conductor 465 and the insulator 503. A conductor 467 is embedded in the wiring 121 shown in FIG. The conductor 467 can be provided in the same layer as the wiring 123. The height of the upper surface of the insulator 505 can be made to be approximately the same.

[0301] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductor 469 is buried in the insulating layer 507. The height of the faces can be made the same.

[0302] An insulator 509 is provided over the conductor 469 and the insulator 507. A conductor 471 is embedded in the wiring 141 shown in FIG. The conductor 471 can be provided in the same layer as the wiring 143. The height of the upper surface of the insulator 509 can be made to be approximately the same.

[0303] An insulator 421 and an insulator 214 are provided on the conductor 471 and the insulator 509. A conductor 453 is embedded in the edge 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of the insulator 214 can be made approximately the same.

[0304] As shown in FIG. 29 and FIG. 30, one of the source and drain of the transistor 602 is a conductive Conductor 461, Conductor 463, Conductor 465, Conductor 467, Conductor 469, Conductor 471 , Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 3 47, the conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor It is electrically connected to the FPC 716 via 780.

[0305] Insulator 613, insulator 614, insulator 680, insulator 674, insulator 681, insulator 50 1, the insulator 503, the insulator 505, the insulator 507, and the insulator 509 are interlayer films. The surface roughness may also function as a flattening film that covers the underlying uneven shapes. .

[0306] By configuring the display device 810 as shown in FIG. 29 and FIG. 30, the display device 810 can be made narrow-frame. The display device 810 is made smaller and has fewer transistors than conventional OS transistors. This allows, for example, a transistor provided in layer 820 and a transistor provided in layer 830 The transistors provided in the first and second gate electrodes can be manufactured using the same device. The manufacturing cost of the display device 810 can be reduced, making the display device 810 low-cost. It is possible.

[0307] <Display device configuration example 3> 31A and 31B show a subpixel 90 that can be used in the display device of one embodiment of the present invention. 22(B) is a top view showing a configuration example of the sub-pixel 901. Here, the transistor 552 has a back gate in addition to a gate. The gate of the transistor 554 is electrically connected to the wiring 831. In addition, the back gate is a source or drain of the transistor 554. The other electrode of the capacitor 562 and one electrode of the light-emitting element 572 are electrically connected to each other. It has been done.

[0308] In FIG. 31A, the subpixel 901 includes a transistor, a capacitor, a wiring, and the like. In FIG. 31(B), in addition to the configuration shown in FIG. 31(A), A conductor 772 having a function as one electrode of the optical element 572 is shown. In both (A) and (B), the electrode functions as the other electrode of the light-emitting element 572. Here, one electrode of the light emitting element 572 functions as a pixel electrode. The other electrode of the light-emitting element 572 functions as a common electrode.

[0309] As shown in FIGS. 31A and 31B, the subpixel 901 includes a conductor 911 and a conductor 912. , a semiconductor 913, a semiconductor 914, a conductor 915a, a conductor 915b, and a conductor 91 6a, conductor 916b, conductor 917, conductor 918, conductor 919, and conductor 920, a conductor 921, a conductor 922, a conductor 923, a conductor 924, and a conductor 925, conductor 926, conductor 927, conductor 928, conductor 929, and conductor 930, conductor 931, and conductor 772.

[0310] The conductor 911 and the conductor 912 can be formed in the same process. The conductor 911 and the semiconductor 914 are formed in the same process, and are formed in a process subsequent to the process of the conductor 911 and the conductor 912. Conductors 915a and 915b, as well as conductors 916a and The conductor 916b is formed in the same process and in a process later than the conductors 911 and 912. The conductor 917 and the conductor 918 are formed in the same process. 913 and semiconductor 914, as well as conductors 915a, 915b, 916a, and The conductor 916b can be formed in a subsequent process.

[0311] The conductors 919 to 923 are formed in the same process, and the conductors 917 and 918 The conductor 924 can be formed in a later step. The conductors 925 to 928 can be formed in the same process. The conductors 929 to 930 are formed in a step subsequent to the step of forming the conductor 924. 31 is formed in the same process and is formed in a process subsequent to the conductors 925 to 928. The conductor 772 can be formed in a process after the conductors 929 to 931. This can be done.

[0312] In this specification, elements formed in the same process are said to be provided in the same layer. For example, the conductor 911 and the conductor 912 can be formed in the same process. Therefore, it can be said that the conductor 911 and the conductor 912 are provided in the same layer. Elements formed in later steps are placed on top of elements formed in earlier steps. For example, the conductors 929 to 931 can be formed from the conductors 925 to 928. Since the conductors 929 to 931 can be formed in a later process, 5 to 928.

[0313] The conductor 911 functions as a backgate electrode of the transistor 552. The conductor 913 includes a channel formation region of the transistor 552. The conductor 915 serves as one of a source electrode and a drain electrode of the transistor 552. b serves as the other of the source electrode and the drain electrode of the transistor 552. The conductor 917 functions as a gate electrode of the transistor 552 .

[0314] The conductor 912 functions as a backgate electrode of the transistor 554. The conductor 914 includes a channel formation region of the transistor 554. The conductor 916 serves as one of a source electrode and a drain electrode of the transistor 554. b serves as the other of the source electrode and the drain electrode of the transistor 554 . The conductor 918 serves as a gate electrode of the transistor 554 .

[0315] The conductor 919 functions as one electrode of the capacitor 562. The conductor 925 functions as the other electrode of the capacitor 562. The conductor 929 corresponds to the wiring 831 having the function of a data line. The conductor 930 corresponds to the wiring 835a having a function as a power supply line. As described above, the conductor 772 functions as one electrode of the light-emitting element 572. .

[0316] The conductor 911 is electrically connected to the conductor 920. The conductor 912 is electrically connected to the conductor 92 3. The conductor 915a is electrically connected to the conductor 921. The conductor 915b is electrically connected to the conductor 919. The conductor 916a is It is electrically connected to the electrical component 922 .

[0317] The conductor 916b is electrically connected to the conductor 923. That is, the transistor 55 A conductor 912 serving as a back gate electrode of the transistor 554 and a source The conductor 916b having the function of the other of the source electrode and the drain electrode is a conductor 923. The two are electrically connected via

[0318] The conductor 917 is electrically connected to the conductor 920. That is, the transistor 552 A conductor 911 serving as a back gate electrode of the transistor 552 and a gate A conductor 917 having a function as an electrode is electrically connected via a conductor 920. There are.

[0319] The conductor 920 is electrically connected to the conductor 925. That is, the transistor 552 A conductor 917 having a function as a gate electrode of the 925 is electrically connected via conductor 920.

[0320] The conductor 918 is electrically connected to the conductor 919. The conductor 921 is electrically connected to the conductor 92. 6. The conductor 922 is electrically connected to the conductor 927. The conductor 923 is electrically connected to the conductor 928. The conductor 924 is electrically connected to the conductor 9 28.

[0321] The conductor 926 is electrically connected to the conductor 929. That is, the transistor 552 A conductor 915a having a function as one of a source electrode and a drain electrode of the data line The conductor 929 having the function of is connected to

[0322] The conductor 927 is electrically connected to the conductor 930. That is, the transistor 554 A conductor 916a having a function as one of a source electrode and a drain electrode of the power supply line The conductor 930 having the function of the conductor 922 and the conductor 927 are electrically connected to the conductor 930. is connected to

[0323] The conductor 928 is electrically connected to the conductor 931. The conductor 931 is electrically connected to the conductor 77. 2 is electrically connected to

[0324] The semiconductor 913 and the semiconductor 914 can include, for example, a metal oxide. Transistor 552 and transistor 554 can be OS transistors.

[0325] FIG. 32 shows an example of a pixel 902 configured with sub-pixels 901 having the configuration shown in FIG. 31(B). In FIG. 32, a sub-pixel 901R has a function of emitting red light. The subpixel 901G has a function of emitting green light. Meanwhile, the sub-pixel 901B is a sub-pixel 901 having a function of emitting blue light. In this way, the pixel 902 is formed by the subpixels 901R, 901G, and 901B. Specifically, the sub-pixels 901R and 901B in the upper row are A pixel 902 is formed by the first sub-pixel 901A and the sub-pixel 901G provided in the lower row. In addition, the sub-pixel 901G provided in the upper row and the sub-pixel 901R and A pixel 902 is constituted by the first pixel 901 and the sub-pixel 901B.

[0326] In FIG. 32, subpixels 901R, 901G, and 901B are provided in the upper row. The sub-pixels 901R, 901G, and 901B provided in the lower row are respectively By using this configuration, the scanning lines are The sub-pixels 901 of the same color are arranged alternately in the extending direction of the conductor 925 having all the functions. This allows one data line to have the function of emitting light of the same color. In other words, the sub-pixels 901R and 901R are electrically connected to each other. Two or more types of sub-pixels 901 among the sub-pixels 901A, 901B, and 901C form one data line. Therefore, it is possible to prevent the wiring from being electrically connected to the contact line.

[0327] FIG. 33 is a cross-sectional view of the portion indicated by the dashed line A1-A2 in FIG. 31(B). A transistor 552 and a transistor 554 are provided on the transistor 21. An insulator 1022 is provided on the capacitor 552 and the transistor 554. An insulator 1023 is provided on the upper side. Note that a substrate is provided below the insulator 1021. In addition, between the substrate and the insulator 1021, the components of the layer 820 shown in FIG. A gate driver circuit 821, a source driver circuit 822, a circuit 840, etc. Cut.

[0328] As shown in FIG. 33, the conductors provided in different layers function as plugs. For example, the conductor 915a and the conductor 915b are electrically connected to each other via the conductor 990. 5a is electrically connected to a conductor 921 provided in an upper layer via a conductor 990. The conductor 990 is the same as the conductor 453, the conductor 305, and the conductor 337 shown in FIG. , conductor 353, conductor 355, conductor 357, conductor 301a, conductor 301b, conductor The conductor 331, the conductor 351, the conductor 333, and the conductor 335 may have the same configuration. .

[0329] An insulator 1024 is provided over the conductors 919 to 923 and over the insulator 1023. A conductor 924 is provided on the insulator 1024. 24 and the conductor 924 form a capacitor 562.

[0330] An insulator 1025 is provided over the conductor 924 and the insulator 1024. An insulator 1026 is provided over the conductor 928 and the insulator 1025. An insulator 1027 is provided over the conductors 29 to 931 and over the insulator 1026.

[0331] A conductor 772 and an insulator 730 are provided on the insulator 1027. The conductive layer 772 and the EL layer 730 may be configured to cover a part of the conductive layer 772. The light-emitting element 572 is constituted by the element 86 and the conductor 788 .

[0332] An adhesive layer 991 is provided on the conductor 788, and an insulator 992 is provided on the adhesive layer 991. The insulator 992 on the adhesive layer 991 can be formed by the following procedure. An insulator 992 is formed on a substrate different from the substrate on which the light emitting element 572 and the like are formed. Next, the conductor 788 and the insulator 992 are bonded together by an adhesive layer 991. The substrate on which the insulator 992 is formed is peeled off. It is possible.

[0333] A colored layer 993 is provided on the insulator 992. In FIG. The color layer 993 is provided with an adhesive layer 994. The substrate 995 is bonded to the substrate.

[0334] The colored layer 993b has a function of transmitting light of a color different from that of the colored layer 993a. For example, The pixel 902 has a sub-pixel 901R having a function of emitting red light, a sub-pixel 902B having a function of emitting green light, and a The subpixel 901G has a function of emitting blue light, and the subpixel 901B has a function of emitting blue light. When the layer 993a has a function of transmitting red light, the colored layer 993b has a function of transmitting green light or blue light. It has the ability to transmit light.

[0335] By forming a colored layer 993 on an insulator 992, the colored layer 993 and the light-emitting element 572 are This makes it possible to easily align the display device of one embodiment of the present invention. The degree can be increased.

[0336] <Display device configuration example 4> FIG. 34A illustrates a configuration of a subpixel 940 that can be used in the display device of one embodiment of the present invention. 9 is a schematic diagram showing an example of a stacked structure of a subpixel 940_1 and a subpixel 940_2. The subpixel 940 may have a circuit configuration shown in FIG. Here, the transistor 511 and the transistor 529 have a back gate in addition to a gate. The back gate is electrically connected to the wiring 831_1. The capacitor 513 has a back gate, and the back gate is electrically connected to the wiring 831_2. Furthermore, the transistor 521 has a back gate, which is a capacitance element. The other electrode of the terminal 517 is electrically connected to one electrode of the light-emitting element 572 .

[0337] FIG. 34B is a top view showing a configuration example of the sub-pixel 940_1. A transistor, a capacitor, a conductor constituting a wiring, and a semiconductor included in the pixel 940_1 This shows that.

[0338] As shown in FIG. 34B, the subpixel 940_1 includes a conductor 951, a semiconductor 952, and a Conductor 953, conductor 954a, conductor 954b, conductor 955a, and conductor 955 b, conductor 956, conductor 957, conductor 958, conductor 959, and conductor 96 0, conductor 961, conductor 962, conductor 963, conductor 964, and conductor 96 5, conductor 966, and conductor 967.

[0339] The semiconductor 952 and the semiconductor 953 are formed in the same process and are formed in a process after the conductor 951. Conductor 954a and conductor 954b, as well as conductor 955a and conductor The conductor 955b can be formed in the same process, but in a process subsequent to that of the conductor 951. The conductor 956 and the conductor 957 are formed in the same process. 53, and conductor 954a, conductor 954b, conductor 955a, and conductor 955b. It can be formed in a later process.

[0340] The conductors 958 to 962 are formed in the same process, and the conductors 956 and 957 The conductor 963 can be formed in a later step. The conductors 964 to 967 can be formed in the same process. conductor 963.

[0341] The conductor 951 serves as a back gate electrode of the transistor 511 and the transistor 529. The conductor 951 is connected to the wiring 831_1 that functions as a scan line. handle.

[0342] The semiconductor 952 includes a channel formation region of the transistor 511. The conductor 954a The conductor serves as one of a source electrode and a drain electrode of the transistor 511. 954b serves as the other of the source electrode or the drain electrode of the transistor 511. The conductor 956 functions as a gate electrode of the transistor 511.

[0343] The semiconductor 953 includes a channel formation region of the transistor 529. The conductor serves as one of a source electrode and a drain electrode of the transistor 529. 955b serves as the other of the source electrode or drain electrode of the transistor 529. The conductor 957 functions as a gate electrode of the transistor 529.

[0344] The conductor 958 functions as one electrode of the capacitor 515. The conductor 964 serves as the other electrode of the capacitor 515. The conductor 965 corresponds to the wiring 832_1 having a function as a power supply line. It corresponds to wiring 543.

[0345] The conductor 951 is electrically connected to the conductor 962. The conductor 954a is electrically connected to the conductor 9 59. The conductor 954b is electrically connected to the conductor 958. The conductor 955a is electrically connected to the conductor 960. The conductor 955b is It is electrically connected to conductor 961.

[0346] The conductor 956 and the conductor 957 are electrically connected to the conductor 962. The transistor 511 and the transistor 529 function as back gate electrodes. The conductor 951 corresponding to the wiring 831_1 having a function as a line is connected to the conductor 962 via the conductor 962. A conductor 956 serving as a gate electrode of the transistor 511 and a It is electrically connected to a conductor 957 which functions as the gate electrode of the gate electrode 529 .

[0347] The conductor 959 is electrically connected to the conductor 964. That is, the transistor 511 A conductor 954a serving as one of the source and drain of the The functional conductor 964 is electrically connected via the conductor 959 .

[0348] The conductor 960 is electrically connected to the conductor 965. That is, the transistor 529 A conductor 955a having a function as one of the source and drain of the The functional conductor 965 is electrically connected via the conductor 960.

[0349] The conductor 961 is electrically connected to the conductor 967. The conductor 963 is electrically connected to the conductor 96 6 is electrically connected to

[0350] The semiconductor 952 and the semiconductor 953 can include, for example, a metal oxide. The transistor 511 and the transistor 529 can be OS transistors.

[0351] In FIG. 35A, a transistor, a capacitor, a wiring, and the like included in the subpixel 940_2 are In FIG. 35(B), in addition to the structure shown in FIG. 35(A), , a conductor 772 having a function as one electrode of the light-emitting element 572 is shown. In both of FIG. 35(A) and (B), the function of the other electrode of the light emitting element 572 is Conductors and other components are omitted.

[0352] As shown in FIGS. 35A and 35B, the subpixel 940_2 includes a conductor 968 and a conductor 96 9, a conductor 970, a semiconductor 971, a semiconductor 972, a conductor 973a, and a conductor 9 73b, conductor 974a, conductor 974b, conductor 975, conductor 976, and conductor Conductor 977, conductor 978, conductor 979, conductor 980, conductor 981, and conductor Conductor 982, conductor 983, conductor 984, conductor 985, conductor 986, and conductor The semiconductor device includes a conductor 987 and a conductor 772.

[0353] The conductors 968 to 970 can be formed in the same process. The conductors 968 to 970 and the semiconductor 972 are formed in the same step and are formed in a step subsequent to the steps of the conductors 968 to 970. The conductors 973a and 973b, as well as the conductors 974a and The conductor 974b is formed in the same process and is formed in a process after the conductors 968 to 970. The conductor 975 and the conductor 976 are formed in the same process. 971 and a semiconductor 972, as well as a conductor 973a, a conductor 973b, a conductor 974a, and and conductor 974b can be formed in a later process.

[0354] The conductors 977 to 981 are formed in the same process, and the conductors 975 and 976 The conductor 982 can be formed in a later step. The conductors 983 to 985 can be formed in the same process. The conductor 986 and the conductor 987 are formed in a step subsequent to the step of forming the conductor 982. The conductor 87 is formed in the same process and is formed in a process subsequent to the conductors 983 to 985. The conductor 772 can be formed in a process subsequent to the process of the conductors 986 and 987. This can be done.

[0355] The conductor 968 functions as a back gate electrode of the transistor 513 and is The semiconductor 971 corresponds to the wiring 831_2 having a function as a line. The conductor 973a is a source electrode or The conductor 973b serves as one of the drain electrodes of the transistor 513. The conductor 975 serves as the other of the source electrode and the drain electrode. It functions as the gate electrode of the gate electrode 513.

[0356] The conductor 970 functions as a backgate electrode of the transistor 521. The conductor 972 includes a channel formation region of the transistor 521. The conductor 974 serves as one of the source and drain electrodes of the transistor 521. b functions as the other of the source electrode and the drain electrode of the transistor 521. The conductor 976 functions as a gate electrode of the transistor 521 .

[0357] The conductor 977 functions as one electrode of the capacitor 517. The conductor 983 serves as the other electrode of the capacitor 517. The conductor 986 corresponds to the wiring 832_2 having a function as a power supply line. The conductor 772 corresponds to the wiring 537. As described above, the conductor 772 is connected to one electrode of the light-emitting element 572. It has the function of

[0358] The conductor 968 is electrically connected to the conductor 978. The conductor 969 is electrically connected to the conductor 97 7. The conductor 970 is electrically connected to the conductor 981. The conductor 973a is electrically connected to the conductor 979. The conductor 973b is The conductor 974a is electrically connected to the conductor 977. The conductor 974a is electrically connected to the conductor 980. It is being done.

[0359] The conductor 974b is electrically connected to the conductor 981. That is, the transistor 52 A conductor 970 serving as a back gate electrode of the first transistor and a source electrode of the transistor 521 The conductor 974b having the function of the other of the source electrode and the drain electrode is a conductor 981. The two are electrically connected via

[0360] The conductor 975 is electrically connected to the conductor 978. That is, the transistor 513 A conductor 968 serving as a back gate electrode of the transistor 513 and a gate A conductor 975 having a function as an electrode is electrically connected via a conductor 978. In addition, the conductor 976 is electrically connected to the conductor 977.

[0361] The conductor 979 is electrically connected to the conductor 983. That is, the transistor 513 A conductor 973a having a function as one of the source and drain of the The functional conductor 983 is electrically connected via the conductor 979 .

[0362] Conductor 980 is electrically connected to conductor 984. Conductor 981 is electrically connected to conductor 98 5. Electrical conductor 982 is electrically connected to electrical conductor 985. .

[0363] The conductor 984 is electrically connected to the conductor 986. That is, the transistor 521 A conductor 974a having a function as one of a source electrode and a drain electrode of the power supply line The conductor 986 having the function of the conductor 980 and the conductor 984 are electrically connected to the conductor 986. is connected to

[0364] The conductor 985 is electrically connected to the conductor 987. The conductor 987 is electrically connected to the conductor 77. 2 is electrically connected to

[0365] The semiconductor 971 and the semiconductor 972 can include, for example, a metal oxide. The transistor 513 and the transistor 521 can be OS transistors.

[0366] FIG. 36 is a top view showing a stacked structure of the subpixels 940_1 and 940_2. 9 shows an electrical connection relationship between the sub-pixel 940_1 and the sub-pixel 940_2. Therefore, the conductor 772 having a function as a pixel electrode and provided in the subpixel 940_2 is Not shown.

[0367] As shown in FIG. 36, a conductor 966 provided in the subpixel 940_1 and a conductor 967 provided in the subpixel 940_2 The subpixels 940, 941, 942, 943, 944, 945, 946, 947, 948, 950, 951, 952, 953, and 954 are electrically connected to each other. The other electrode of the capacitor 515 provided in the subpixel 940_1 is connected to a transistor provided in the subpixel 940_2. The other of the source and drain of the transistor 513, the gate of the transistor 521, and the capacitance element 5 17. Also, the subpixel 940_1 is provided with A conductor 967 provided in the subpixel 940_1 and a conductor 970 provided in the subpixel 940_2 are electrically connected to each other. As a result, the source or drain of the transistor 529 provided in the subpixel 940_1 The other drain is connected to the other electrode of the capacitor 517 provided in the subpixel 940_2, The other of the source and drain of the transistor 521 and one of the electrodes of the light emitting element 572 are electrically connected to the It can continue.

[0368] FIG. 37 shows a pixel structure including sub-pixels 940 having the configuration shown in FIG. 34(B) and FIG. 35(B). 37 is a top view showing a configuration example of a pixel 941. In FIG. 37, a sub-pixel 940R emits red light. 9 shows subpixel 940 having the function of emitting red light, and subpixel 940G having the function of emitting green light. The subpixel 940A has a function of emitting blue light, and the subpixel 940B has a function of emitting blue light. As shown in FIG. 37, a subpixel 940R, a subpixel 940G, and a subpixel 940B, Specifically, the pixel 941 is configured by the sub-pixel 940R provided in the upper row. The sub-pixel 940B and the sub-pixel 940G disposed in the lower row form a pixel 941. In addition, the sub-pixel 940G provided in the upper row and the sub-pixel 940G provided in the lower row are A pixel 941 is formed by the sub-pixels 940R and 940B.

[0369] In FIG. 37, subpixels 940R, 940G, and 940B are provided in the upper row. The sub-pixels 940R, 940G, and 940B provided in the lower row are respectively By using this configuration, the scanning lines are The conductor 951 having both functions and the conductor 968 have sub-pixels of the same color in the extending direction. 940 can be arranged alternately. This allows one data line to carry light of the same color. The sub-pixels 940 having the emission function can be electrically connected. In other words, two or more types of sub-pixels 940R, 940G, and 940B are selected from the sub-pixels 940R, 940G, and 940B. 40 can be prevented from being electrically connected to one data line.

[0370] FIG. 38 is a cross-sectional view of the portion indicated by the dashed line A3-A4 in FIG. 34(B) and FIG. 35(B). On the insulator 1031, a transistor that is provided in the subpixel 940_1 is provided. A transistor 511 and a transistor 529 are provided. An insulator 1032 is provided on the transistor 529 and an insulator 1033 is provided on the insulator 1032. A substrate is provided below the insulator 1031. Between the plate and the insulator 1031, the components of the layer 820 shown in FIG. 8 (gate driver circuit A circuit 821, a source driver circuit 822, a circuit 840, etc. may be provided.

[0371] As shown in FIG. 38, the conductors provided in different layers function as plugs. Electrically connected via conductor 990.

[0372] An insulator 1034 is provided over the conductors 958 to 962 and over the insulator 1033. A conductor 963 is provided on the insulator 1034. The capacitor 515 is formed by the capacitor 34 and the conductor 963 .

[0373] An insulator 1035 is provided over the conductor 963 and the insulator 1034. An insulator 1036 is provided over the conductor 967.

[0374] On the insulator 1036, a transistor that is provided in the subpixel 940_2 is provided. In addition, a transistor 513 and a transistor 521 are provided. An insulator 1042 is provided on the transistor 521, and an insulator 1043 is provided on the insulator 1042. will be established.

[0375] An insulator 1044 is provided over the conductors 977 to 981 and the insulator 1043. A conductor 982 is provided on the insulator 1044. The capacitor 517 is formed by the capacitor 4 and the conductor 982.

[0376] An insulator 1045 is provided on the conductor 982 and the insulator 1044. An insulator 1046 is provided over the conductor 985 and the insulator 1045. An insulator 1047 is provided over 86, over conductor 987, and over insulator 1046.

[0377] A conductor 772 and an insulator 730 are provided on the insulator 1047. As shown, the insulator 730 may be configured to cover a portion of the conductor 772. The light-emitting element 572 is composed of the conductor 772, the EL layer 786, and the conductor 788. do.

[0378] 33, an adhesive layer 991 is provided on the conductor 788. An insulator 992 is provided on the insulating layer 991. Further, a coloring layer 993 is provided on the insulating layer 992. A substrate 995 is attached onto the colored layer 993 with an adhesive layer 994 .

[0379] <Example of the configuration of light-emitting element> 39(A) to (E) are diagrams showing configuration examples of the light-emitting element 572. 7 shows a structure (single structure) in which an EL layer 786 is sandwiched between a conductor 772 and a conductor 788. As mentioned above, the EL layer 786 includes a light-emitting material, for example, an organic compound light-emitting Materials included.

[0380] FIG. 39B is a diagram showing a laminated structure of the EL layer 786. In the light-emitting element 572 having the structure, the conductor 772 functions as an anode, and the conductor 788 functions as a cathode. It functions as a pole.

[0381] The EL layer 786 is formed by stacking a hole injection layer 721, a hole transport layer 722, a light emitting layer 723, and a conductor 772 on the EL layer 786. 23, an electron transport layer 724, and an electron injection layer 725 are laminated in this order. When the conductor 772 functions as a cathode and the conductor 788 functions as an anode, The stacking order is reversed.

[0382] The light-emitting layer 723 has a light-emitting material or a combination of multiple materials, and emits a desired light color. The light-emitting layer 723 can have a structure in which fluorescent light or phosphorescent light can be emitted. A laminated structure with different light colors may be used. In this case, the light emitting layers used in the laminated light emitting layers may be different in color. The material and other materials may each be made of different materials.

[0383] In the light-emitting element 572, for example, the conductor 772 shown in FIG. The dielectric 788 is used as a semi-transmissive / semi-reflective electrode to form a micro-optical resonator (microcavity) structure. As a result, the light emitted from the light-emitting layer 723 included in the EL layer 786 is resonated between the two electrodes. This can intensify the light emitted through the conductor 788.

[0384] Note that the conductor 772 of the light-emitting element 572 is made of a conductive material having reflectivity and a conductive material having light-transmitting properties. In the case of a reflective electrode having a laminated structure with a conductive material (transparent conductive film), the thickness of the transparent conductive film is Specifically, the light emitted from the light-emitting layer 723 can be adjusted optically by controlling the light emitted from the light-emitting layer 723. The distance between the electrodes of the conductor 772 and the conductor 788 is mλ / 2 (only) for the wavelength λ of the light. It is preferable to adjust the value so that the value is close to m (where m is a natural number).

[0385] In order to amplify the desired light (wavelength: λ) obtained from the light emitting layer 723, the conductor 77 2 to a region (light emitting region) of the light emitting layer 723 where desired light is obtained, and 88 to the region (light emitting region) of the light emitting layer 723 where desired light is obtained, and It is preferable to adjust the wavelength to be in the vicinity of (2m'+1)λ / 4 (where m' is a natural number). The light-emitting region here is a region in which holes and electrons in the light-emitting layer 723 are condensed. The recombination region is shown.

[0386] By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light-emitting layer 723 can be adjusted. This narrows the line width and allows light emission with good color purity to be obtained.

[0387] However, in the above case, the optical distance between the conductor 772 and the conductor 788 is, strictly speaking, This can be said to be the total thickness from the reflection area at However, it is difficult to precisely determine the reflection area of ​​the conductor 772 and the conductor 788. Therefore, it is sufficient to assume that any position of the conductor 772 and the conductor 788 is a reflection area. The effect of obtaining the above can be obtained. Strictly speaking, the optical distance between the reflective area of ​​the conductor 772 and the light emitting area where the desired light is obtained is determined. However, the conductor 772 is It is difficult to precisely determine the reflection area in the light emitting layer and the emission area in the light emitting layer from which the desired light can be obtained. Since it is difficult to achieve this, any position of the conductor 772 is set as a reflection region, and any position of the light-emitting layer from which desired light can be obtained is set as a reflection region. It is assumed that the above-mentioned effect can be sufficiently obtained by assuming any desired position as the light emitting region.

[0388] The light-emitting element 572 shown in FIG. 39(B) has a microcavity structure, and therefore the same EL Even if the device has layers, it is possible to extract light of different wavelengths (monochromatic light). There is no need to paint different colors (e.g., RGB) to obtain different light colors. It is easy to apply a colored layer. It can also be combined with a colored layer. Since it is possible to increase the light emission intensity in the surface direction, it is possible to reduce power consumption.

[0389] It should be noted that the light emitting element 572 shown in FIG. 39(B) does not have a microcavity structure. In this case, the light-emitting layer 723 may be structured to emit white light, and a colored layer may be provided to In addition, the EL layer 786 is formed. When doing so, if different colors are applied to obtain different luminescent colors, it is possible to obtain a desired color without providing a colored layer. You can extract light.

[0390] At least one of the conductor 772 and the conductor 788 is a light-transmitting electrode (a transparent electrode, a semi-transparent electrode, When the electrode having light transmission is a transparent electrode, the transparent electrode can be a semi-reflective electrode. The visible light transmittance of the electrode is 40% or more. The reflectance of the semi-reflective electrode for visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0391] When the conductor 772 or the conductor 788 is an electrode having reflectivity (a reflecting electrode), the reflectivity The visible light reflectance of the electrode having the above structure is 40% or more and 100% or less, preferably 70% or more and 10 0% or less. The resistivity of this electrode is 1×10 -2 Ωcm or less is preferable.

[0392] The light emitting element 572 may have a configuration as shown in FIG. Two EL layers (EL layer 786a and EL layer 786b) are disposed between the conductor 772 and the conductor 788. and a laminated structure having a charge generating layer 792 between the EL layer 786a and the EL layer 786b. The light emitting element 572 having a tandem structure is shown. Therefore, the current efficiency and the external quantum efficiency of the light-emitting element 572 can be improved. It is possible to display a high-brightness image on the display device 810. In addition, the power consumption of the display device 810 can be reduced. Here, the EL layer 786a and the EL layer 786b are the same as those shown in FIG. The EL layer 786 may have a similar structure.

[0393] The charge generating layer 792 generates an EL Electrons are injected into one of the layer 786a and the EL layer 786b, and holes are injected into the other. Therefore, the potential of the conductor 772 becomes higher than the potential of the conductor 788. When a voltage is applied so that the charge generation layer 792 is turned on, electrons are injected into the EL layer 786a. Holes are injected from the charge generating layer 792 into the EL layer 786b.

[0394] In addition, the charge generating layer 792 transmits visible light from the viewpoint of light extraction efficiency (specifically, It is preferable that the charge generating layer 792 has a visible light transmittance of 40% or more. The electrical conductivity of the generating layer 792 is lower than the electrical conductivity of the conductor 772 or the electrical conductivity of the conductor 788. Good too.

[0395] The light emitting element 572 may have a configuration as shown in FIG. Between the conductor 772 and the conductor 788, three EL layers (EL layer 786a, EL layer 786b, and EL layer 786a and EL layer 786b are provided between the EL layer 786a and EL layer 786b, and between the EL layer 786c and EL layer 786b. A light-emitting element 57 having a tandem structure having a charge generating layer 792 between the EL layer 786b and the EL layer 786c. 2. Here, the EL layer 786a, the EL layer 786b, and the EL layer 786c are the same as those shown in FIG. The light-emitting element 572 may have a structure similar to that of the EL layer 786 shown in FIG. ) is used to further improve the current efficiency and external quantum efficiency of the light emitting element 572. As a result, the display device 810 can display an image with even higher brightness. In addition, the power consumption of the display device 810 can be further reduced.

[0396] The light emitting element 572 may have a configuration as shown in FIG. Between the conductor 772 and the conductor 788, n EL layers (EL layer 786(1) to EL layer 786(2)) are provided. (n)) is provided, and a charge generating layer 792 is provided between each of the EL layers 786. 5 shows a light-emitting device 572 having a structure in which EL layers 786(1) to 786(n) are The EL layer 786 shown in FIG. 39(B) can have the same structure as that of the EL layer 786 shown in FIG. In the EL layer 786, the EL layer 786(1), the EL layer 786(m), the EL layer 786( m+1), and EL layer 786(n), where m is an integer equal to or greater than 2 and less than n. The larger the value of n, the higher the current efficiency and external Therefore, it is possible to display an image with high brightness on the display device 810. In addition, the power consumption of the display device 810 can be reduced.

[0397] <Materials for light-emitting devices> Next, constituent materials that can be used for the light emitting element 572 will be described.

[0398] <<Conductor 772 and Conductor 788>> If the conductor 772 and the conductor 788 can fulfill the functions of an anode and a cathode, the following can be used: For example, metals, alloys, and electrically conductive compounds can be used in combination. In-Sn oxide ( ITO), In-Si-Sn oxide (ITSO), In-Zn oxide, In-W-Zn oxide is one of them. Others include aluminum (Al), titanium (Ti), Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni) , Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), Tin (Sn), Molybdenum (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold Metals such as (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd) In addition, the above-mentioned examples may be used. Elements belonging to Group 1 or 2 of the Periodic Table (e.g., lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), Terbium (Yb) and other rare earth metals and alloys containing these in appropriate combinations, as well as other graphite Fen etc. can be used.

[0399] <<Hole Injection Layer 721 and Hole Transport Layer 722>> The hole injection layer 721 is connected to the EL layer 786 from the conductor 772 which is the anode or the charge generation layer 792. This is a layer that injects holes and contains a material with high hole injection properties. EL layer 786a, EL layer 786b, EL layer 786c, and EL layers 786(1) to 786(E). It shall include L layer 786(n).

[0400] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples of transition metal oxides include oxides of tungsten, manganese, and other oxides. Phthalocyanine (abbreviation: H 2 Pc) and copper phthalocyanine (abbreviation: CuPc) The nin-series compound, 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenyl N,N'-bis{4-[bis(3-methylphenyl)amino]biphenyl (abbreviation: DPAB), phenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4, Aromatic amine compounds such as 4'-diamine (abbreviation: DNTPD) or poly(3,4-ethyl PEDOT / PSS) Polymers such as the above can be used.

[0401] In addition, materials with high hole injection properties include hole transport materials and acceptor materials (electron acceptors). A composite material containing an acceptor material can also be used. In this case, the positive Electrons are extracted from the hole transport material, generating holes in the hole injection layer 721, and the hole transport layer 72 Holes are injected into the light-emitting layer 723 through the hole-injecting layer 721. The substrate may be formed of a single layer of a composite material containing a material having an electron-accepting property and an acceptor material (electron-accepting material). However, the hole transport material and the acceptor material (electron accepting material) are stacked in separate layers. It may be formed in layers.

[0402] The hole transport layer 722 is a layer that transports holes injected from the conductor 772 by the hole injection layer 721. The hole transport layer 722 is a layer that transports the electrons to the light layer 723. The hole transporting material used for the hole transport layer 722 is particularly suitable for the HOMO level of the hole injection layer 721. It is preferable to use a compound having a HOMO level that is the same as or close to the above-mentioned level.

[0403] The acceptor material used for the hole injection layer 721 is, for example, a material of Group 4 to Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere and has a low absorption rate. It is preferred because it has low moisture resistance and is easy to handle. Other examples include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used. 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane ( Abbreviation: F 4 -TCNQ), Chloranil, 2,3,6,7,10,11-Hexacyano-1 , 4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) etc. It is possible.

[0404] The hole transport material used in the hole injection layer 721 and the hole transport layer 722 is 10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferable. Other substances may be used as long as they are suitable.

[0405] As hole transport materials, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, Indole derivatives) and aromatic amine compounds are preferred. Specific examples include 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NP D) N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl] phenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9 ,9'-Bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB ), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine ( Abbreviated name: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl) tetrahydrofuran mBPAFLP, 4-phenyl-4'-(9-phenyl-9 H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 3-[4 -(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: P CPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2 -yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N- (1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole -3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: P CBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole- 3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazo PCBNBB, 9,9-dimethyl-N- Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluor PCBAF, N-phenyl-N-[4-(9-phenyl- 9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluorene-2-amine PCBASF, 4,4',4''-tris(carbazol-9-yl)triphenylphosphine phenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N-diphenylamine) N-amino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3 -Methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA) Compounds with aromatic amine skeletons such as 1,3-bis(N-carbazolyl)benzene (abbreviation mCP), 4,4'-di(N-carbazolyl)biphenyl (CBP), 3,6 -Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP) , 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 3-[N -(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazol PCzPCA1, 3,6-bis[N-(9-phenylcarbazole- 3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2 ), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino ]-9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris[4-( N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl CzPA and other carbazoles. Compounds with a bazoline skeleton, 4,4',4''-(benzene-1,3,5-triyl) Tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[ 4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation Name: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl )phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Compounds with a phene skeleton, 4,4',4''-(benzene-1,3,5-triyl) Di(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl- 9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBF FLBi-II) and other compounds having a furan skeleton.

[0406] In addition, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylphosphine) nylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl Amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis Polymer compounds such as Poly(phenyl)benzidine (abbreviation: Poly-TPD) can also be used. can.

[0407] However, the hole transport material is not limited to the above, and may be one or a combination of various known materials. The combination of these materials can be used as a hole transporting material for the hole injection layer 721 and the hole transport layer 722. The hole transport layer 722 may be formed of a plurality of layers. For example, a first hole transport layer and a second hole transport layer may be laminated.

[0408] <<Light-emitting layer 723>> The light-emitting layer 723 is a layer containing a light-emitting substance. A substance that emits light of a color such as red, green, yellow-green, yellow, orange, or red is appropriately used. As shown in Fig. 39(C), (D), and (E), when the light-emitting element 572 has multiple EL layers, By using different light-emitting materials for the light-emitting layers 723 provided in the respective EL layers, (For example, white light obtained by combining luminescent colors that are complementary to each other) For example, when the light-emitting element 572 has the structure shown in FIG. In this case, the luminescent material used in the luminescent layer 723 provided in the EL layer 786a and the luminescent material used in the EL layer 786b By making the luminescent material used for the EL layer 721 different from that used for the luminescent layer 723 provided in the EL layer 722, The color of the light emitted by the EL layer 86a can be made different from the color of the light emitted by the EL layer 786b. Note that one light-emitting layer may have a laminated structure containing different light-emitting materials.

[0409] The light-emitting layer 723 contains one or more organic compounds in addition to the light-emitting substance (guest material). (host material, assist material) may be included. In addition, one or more organic compounds As the second insulating layer, one or both of a hole transporting material and an electron transporting material can be used.

[0410] When the light-emitting element 572 has the structure shown in FIG. 39(C), the EL layer 786a and the EL A light-emitting material that emits blue light (a blue light-emitting material) is used as a guest material in one of the layers 786b. On the other hand, a substance that emits green light (green luminescent substance) and a substance that emits red light (red luminescent substance) are used. This method is preferably used to emit light from a blue emitting material (blue emitting layer). This is effective when the efficiency or life span of the blue luminescent material is inferior to that of other materials. Using luminescent materials that convert the excitation energy into visible light, green and red luminescent materials are For example, if a luminescent material that converts triplet excitation energy into visible light is used, RGB can be achieved. This is preferable since it improves the spectral balance.

[0411] The light-emitting material that can be used for the light-emitting layer 723 is not particularly limited. A luminescent material that converts energy into visible light or triplet excitation energy into visible light. A luminescent material that converts the emitted light into light can be used. Some examples include the following:

[0412] Luminescent materials that convert singlet excitation energy into light include fluorescent materials. Examples of such derivatives include pyrene derivatives, anthracene derivatives, triphenylene derivatives, and fluoro derivatives. Oleno derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives , dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives In particular, pyrene derivatives are luminescent. It is preferable because it has a high quantum yield. A specific example of the pyrene derivative is N,N'-bis(3-methylpyrene). N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N '-Diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis (Dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation : 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N' -Diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyridine) Benzene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan )-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diamine) bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine]( Abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[( 6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine](abbreviation: 1,6BnfAPrn-03) and the like. In addition, the pyrene derivative is one aspect of the present invention. These are a group of compounds useful for achieving blue chromaticity in

[0413] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-Anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-cal 4'-(10-phenyl-9-anthryl)-4'-(10-phenyl-9-benzol-9-yl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl Phenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-di Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA) ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-phenyl] N-(2-phenyl)-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) etc. can be used. do.

[0414] In addition, examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials. Materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence) tivated delayed fluorescence (TADF) materials are can be.

[0415] Phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. Since each substance has a different emission color (emission peak), it is necessary to select the appropriate one as needed. Select and use.

[0416] It has a blue or green color and the peak wavelength of the emission spectrum is 450 nm or more and 570 nm or less. Examples of phosphorescent materials that can be used include the following substances.

[0417] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN 2 ]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp) 3 ]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz) 3 ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrPrp tz-3b) 3 ]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl [Ir(iPr5 btz) 3 ]), organometallic complexes with a 4H-triazole skeleton such as tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato ]Iridium(III) (abbreviation: [Ir(Mptz1-mp) 3 ]), Tris(1-methyl 1H-1,2,4-triazolato)iridium(II I) (abbreviation: [Ir(Prptz1-Me) 3 ]) Organometallic complexes, fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl] [phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi) 3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) 3 Organometallic complexes with imidazole skeletons such as bis[2-(4',6'-difluorophenyl]] (O-phenyl)pyridinato-N,C 2’ ]Iridium(III) tetrakis(1-pyrazo aryl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pi Lysinato-N,C 2’ ]Iridium(III) picolinate (abbreviation: FIrpic), S[2-(3,5-bistrifluoromethylphenyl)pyridinato-N,C 2’ ]Iridescent Ir(III) picolinate (abbreviation: [Ir(CF 3 ppy) 2 (pic)]), Bis[ 2-(4',6'-difluorophenyl)pyridinato-N,C2’ ]Iridium (III ) acetylacetonate (abbreviation: FIr(acac)) Examples of the organic complex include an organometallic complex having a diphenylpyridine derivative as a ligand.

[0418] It has a green or yellow color and the peak wavelength of the emission spectrum is 495 nm or more and 590 nm or less. Examples of phosphorescent materials that can be used include the following substances.

[0419] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation :[Ir(mppm) 3 ]), tris(4-t-butyl-6-phenylpyrimidinato)i Iridium(III) (abbreviation: [Ir(tBuppm) 3 ]), (acetylacetonato)bi Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm) 2 (acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) 2 (a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Ir(nbppm) 2 (acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl Rupyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) 2 (acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl Phenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp) 2 (acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III)(abbreviation: [Ir(dppm) 2 ( Organometallic iridium complexes with pyrimidine skeletons such as (acetylated acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinate)iridium(III)( Abbreviation: [Ir(mppr-Me) 2 (acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinate)iridium(III)(abbreviation: [Ir(mppr-iPr) 2 Organometallic compounds with pyrazine skeletons such as (acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (Abbreviation: [Ir(ppy) 3 ]), bis(2-phenylpyridinato-N,C 2’ ) Iridi Ir(III) acetylacetonate (abbreviation: [Ir(ppy) 2 (acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq) 2 (acac)]), tris(benzo[h]quinolinato)iridium(II I) (Abbreviation: [Ir(bzq) 3 ]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq) 3 ]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq) 2 (a Organometallic iridium complexes with pyridine skeletons such as bis(2,4-diphenyl ether (cac)]) Phenyl-1,3-oxazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(dpo) 2 (acac)]), bis{2-[4'-(perfluoro Phenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph) 2 (acac)]), bis(2-phenylbenzo[2- Thiazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( bt) 2 In addition to organometallic complexes such as tris(acetylacetonato)(mono(acac)]), Phenanthroline) terbium(III) (abbreviation: [Tb(acac) 3 (Phen)] ) are rare earth metal complexes.

[0420] Among the above, those having a pyridine skeleton (particularly a phenylpyridine skeleton) or a pyrimidine skeleton Organometallic iridium complexes are useful compounds for achieving green chromaticity in one embodiment of the present invention. It is a compound group.

[0421] It has a yellow or red color and the peak wavelength of the emission spectrum is 570 nm or more and 750 nm or less. Examples of phosphorescent materials that can be used include the following substances.

[0422] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinium] dinato]iridium(III) (abbreviation: [Ir(5mdppm) 2 (dibm)]), S[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(5mdppm) 2(dpm)]), (dipivaloyl Thanato)bis[4,6-di(naphthalene-1-yl)pyrimidinato]iridium(III )(Abbreviation: [Ir(d1npm) 2 (dpm)]) Metal Complex, (acetylacetonato)bis(2,3,5-triphenylpyrazinate)iridide Ir(tppr) 2 (acac)]), bis(2,3,5-tetrahydrofuran Triphenylpyrazinate)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir (tppr) 2 (dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethyl {5-phenyl-2-pyrazinyl-κN}phenyl-κC}(2,6-diphenyl Tyl-3,5-heptanedionate-κ 2 O,O') Iridium(III) (abbreviation: [Ir (dmdppr-P) 2 (dibm)]), bis{4,6-dimethyl-2-[5-(4- Cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazine {2,2,6,6-tetramethyl-3,5-heptanedioic acid} Nat-κ 2 O,O') Iridium(III) (abbreviation: [Ir(dmdppr-dmCP) 2 (dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxal Nat-N,C 2’ ]Iridium(III) (abbreviation: [Ir(mpq) 2 (acac)]) , (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ ) Ili Ir(dpq) 2 (acac)]), (acetylacetonate ) Bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (Abbreviation: [Ir(Fdpq) 2 Organometallic compounds with pyrazine skeletons such as (acac)] Complexes and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium (III) (abbreviation Title: [Ir(piq) 3 ]), bis(1-phenylisoquinolinato-N,C 2’ ) Iridi Ir(III) acetylacetonate (abbreviation: [Ir(piq) 2 (acac)]) Organometallic complexes with pyridine skeletons such as 2,3,7,8,12,13,17,18- octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]) Platinum complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monofena Europium(III) (abbreviation: [Eu(DBM) 3 (Phen)]), Tris[1-(2-phenanthroyl)-3,3,3-trifluoroacetonato](monophenanthroyl) Europium(III) (abbreviation: [Eu(TTA) 3 (Phen)] Rare earth metal complexes are included.

[0423] Among the above, the organometallic iridium complex having a pyrazine skeleton is an embodiment of the present invention. In particular, [Ir(dmdppr-dm CP) 2 Organometallic iridium complexes with cyano groups, such as (dpm), are highly stable. Very preferable.

[0424] In addition, blue luminescent substances are those with a photoluminescence peak wavelength of 430 nm or more. It is preferable to use a substance with a wavelength of 70 nm or less, more preferably 430 nm to 460 nm. In addition, the green luminescent material has a photoluminescence peak wavelength of 500 nm or more. 0 nm or less, and more preferably, a substance with a wavelength between 500 nm and 530 nm may be used. The luminescent material has a photoluminescence peak wavelength of 610 nm or more and 680 nm or more. More preferably, a substance having a wavelength of 620 nm or more and 680 nm or less may be used. Luminescence measurements can be performed on either a solution or a thin film.

[0425] By using such compounds in combination with the microcavity effect, the above-mentioned colors can be more easily obtained. At this time, the semi-transparent film required to obtain the microcavity effect can be obtained. The thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm or more and 40 nm or less. The thickness is usually greater than 25 nm and less than 40 nm. Note that the efficiency decreases when the thickness exceeds 40 nm. There is a possibility that this may happen.

[0426] The organic compounds (host material, assist material) used in the light-emitting layer 723 are light-emitting materials (gel A material that has an energy gap larger than that of a non-linear material is called a Alternatively, a plurality of types may be selected and used. The conductive materials can also be used as a host material or an assist material, respectively.

[0427] When the light-emitting substance is a fluorescent material, the host material is a material having an energy level of a singlet excited state. It is preferable to use an organic compound having a large energy level and a small energy level of the triplet excited state. For example, it is preferable to use anthracene derivatives or tetracene derivatives. -Phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carba PCzPA, 3-[4-(1-naphthyl)-phenyl]-9-phenyl -9H-Carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthra 7-[4-(10-phenyl)phenyl]-9H-carbazole (abbreviation: CzPA), [c,g]carbazole (abbreviation: c gDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl- 10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl} Anthracene (abbreviation: FLPPA), 5,12-diphenyltetracene, 5,12-bis (biphenyl-2-yl)tetracene and the like.

[0428] When the light-emitting material is a phosphorescent material, the host material is a material that has a triplet excitation energy of the light-emitting material. (energy difference between the ground state and the triplet excited state) In this case, in addition to zinc and aluminum-based metal complexes, Oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline Dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Conductors, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthroline In addition to anthroline derivatives, aromatic amines and carbazole derivatives can be used. .

[0429] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq 3 ), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq 2 ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq ), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPB O), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBT Z), 2-(4-biphenylyl)-5-(4-tert-butylphenyl) -1,3,4-Oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert -butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OX D-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl) 2,2',2''-(1,3,5 -benzenetriyl)-tris(1-phenyl-1H-benzimidazole) (abbreviation: T PBI), Bathophenanthroline (abbreviation: BPhen), Bathocuproine (abbreviation: BC P), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthracene NBphen, 9-[4-(5-phenyl-1,3,4-oxazolidinyl) Azole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11) and other heterocyclization Examples of aromatic amine compounds include aromatic amine compounds such as NPB, TPD, and BSPB.

[0430] In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, di Benzo[g,p]chrysene derivatives and other condensed polycyclic aromatic compounds are included. ,10-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[ 4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (Abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4 -(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3 -amine (abbreviation: PCAPBA), 9,10-diphenyl-2-[N-phenyl-N-( 9-Phenyl-9H-carbazol-3-yl)amino]anthracene (abbreviation: 2PCA PA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N', N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2 ,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9 -anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 3,6-difluoro Phenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol DPCzPA, 9,10-bis(3,5-diphenylphenyl)anthracene DPPA), 9,10-di(2-naphthyl)anthracene (DNA), 2-tert-Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuD NA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3 '-Diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4' -diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) Benzene (abbreviation: TPB3) and the like can be used.

[0431] In addition, when a plurality of organic compounds are used in the light-emitting layer 723, the compound that forms an exciplex is used as the light-emitting compound. In this case, various organic compounds are appropriately combined to use the material. However, in order to efficiently form an exciplex, it is necessary to use a compound that easily accepts holes. A compound that easily accepts electrons (hole transport material) is combined with a compound that easily accepts electrons (electron transport material). It is particularly preferable to use a material having a hole transporting property and an electron transporting property. The materials described in this embodiment mode can be used.

[0432] TADF materials are materials that convert triplet excited states into singlet excited states using a small amount of thermal energy. It is possible to convert the light into a singlet state (reverse intersystem crossing), and efficiently emit light (fluorescence) from the singlet excited state. The conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: The energy difference between the doublet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably In addition, the delayed fluorescence in TADF materials is The light is an emission that has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. The lifespan of -6 seconds or more, preferably 10 -3 More than seconds.

[0433] Examples of TADF materials include fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium (Cd) Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include those containing Pd. For example, protoporphyrin-tin fluoride complex (SnF 2 (Proto IX)), Meso Porphyrin-Tin Fluoride Complex (SnF 2 (Meso IX)), hematoporphyrin- Tin fluoride complex (SnF 2 (Hemato IX), Coproporphyrin tetramethyl Ester-Tin Fluoride Complex (SnF 2 (Copro III-4Me)), Octaethyl Porphyrin-Tin Fluoride Complex (SnF 2 (OEP)), etioporphyrin fluoride complex (SnF 2 (Etio I)), octaethylporphyrin-platinum chloride complex (Pt Cl 2 OEP) etc.

[0434] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (PIC-TRZ) , 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazo PCCz PTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6- Diphenyl-1,3,5-triazine (PXZ-TRZ), 3-[4-(5-phenyl- 5,10-Dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2 ,4-Triazole (PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine -10-yl)-9H-xanthen-9-one (ACRXTN), bis[4-(9,9- Dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS), 10-Phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]- π-electron rich heteroaromatic rings and π-electron deficient heteroaromatic rings such as 10'-one (ACRSA) In addition, a heterocyclic compound having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used. The substance in which the aromatic heterocycle is directly bonded to the π-electron-rich heterocycle exhibits the donor property of the π-electron-poor heterocycle. The acceptor properties of the toe-shaped heteroaromatic rings are both strong, and the energies of the singlet and triplet excited states are This is particularly preferable since the energy difference is small.

[0435] In addition, when using a TADF material, it can also be used in combination with other organic compounds.

[0436] <<Electron transport layer 724>> The electron transport layer 724 emits electrons injected from the conductor 788 by the electron injection layer 725. The electron transport layer 724 is a layer that transports electrons to the light-transporting layer 723. The electron transport material used in the electron transport layer 724 is 1×10 -6 cm 2 / Vs or higher In addition, if a material has a higher electron transporting property than a hole transporting property, Others than these may be used.

[0437] Electron transport materials include quinoline ligands, benzoquinoline ligands, and oxazole ligands. or a metal complex having a thiazole ligand, an oxadiazole derivative, or a triazole derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, etc. In addition, π-electron-deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds can also be used. can.

[0438] Specifically, Alq 3 , tris(4-methyl-8-quinolinolato)aluminum(III ) (Abbreviation: Almq 3 ), Bis(10-hydroxybenzo[h]quinolinato)beryllium (Abbreviation: BeBq 2 ), BAlq, Zn(BOX) 2 , bis[2-(2-hydroxyphenyl Zn(BTZ) 2 ) and other metal complexes, 2- (4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxazolidinyl Azole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-Oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4'- tert-Butylphenyl)-4-phenyl-5-(4''-biphenyl)-1,2,4 -Triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4- Ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p- EtTAZ), Bathophenanthroline (abbreviation: Bphen), Bathocuproine (abbreviation: BCP), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation Heteroaromatic compounds such as 2-[3-(dibenzothiophen-4-yl)phenyl]phenyl phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[ 3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]ky Noxalin (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl- 9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2 CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzyl Benzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzo 6mDibenzo[f,h]quinoxaline (abbreviation: 6mDB Use of quinoxaline or dibenzoquinoxaline derivatives such as TPDBq-II can be done.

[0439] In addition, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexyl Fluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF- Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2' -bipyridine-6,6'-diyl) (abbreviation: PF-BPy) You can also be there.

[0440] The electron transport layer 724 may be a single layer or a laminate of two or more layers made of the above-mentioned materials. The structure may be such that

[0441] <<Electron injection layer 725>> The electron injection layer 725 is a layer containing a substance with a high electron injection property. Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), Lithium oxide (LiO x ) and the like, alkali metals, alkaline earth metals, or their Compounds such as erbium fluoride (ErF 3 ) rare earth metals A compound can be used. Alternatively, an electride can be used for the electron injection layer 725. For example, an electride is a mixture of calcium and aluminum oxide with high electron density. In addition, the above-mentioned material constituting the electron transport layer 724 may be used. You can also be there.

[0442] In addition, the electron injection layer 725 is made of a composite material obtained by mixing an organic compound and an electron donor. Such composite materials are made by adding electrons to organic compounds by electron donors. In this case, the organic compound is a fluorine-containing compound. It is preferable that the material has excellent transport properties for the generated electrons. Specifically, for example, the above-mentioned electron The electron transport material (metal complex, heteroaromatic compound, etc.) used for the transport layer 724 can be used. The electron donor may be any substance that exhibits electron donating properties to organic compounds. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferred, and lithium, cesium, etc. Examples of the elements include aluminum, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides and alkaline earth metal oxides are preferred, and lithium oxide, calcium oxide, Examples of the cations include barium oxide and barium phosphate. In addition, Lewis bases such as magnesium oxide are used. It is also possible to use organic compounds such as tetrathiafulvalene (TTF). It is also possible.

[0443] <<Charge generation layer 792>> The charge generating layer 792 generates a charge when a voltage is applied between the conductor 772 and the conductor 788. Of the two EL layers 786 in contact with the charge generating layer 792, the EL layer 786 closest to the conductor 772 788 and has a function of injecting holes into the EL layer 786 on the side close to the conductor 788. For example, in the light-emitting element 572 shown in FIG. The EL layer 786a has a function of injecting electrons and the EL layer 786b has a function of injecting holes. The charge generation layer 792 is a material in which an electron acceptor is added to a hole transport material. Alternatively, an electron donor may be added to the electron transporting material. In addition, both of these structures may be laminated. By forming the layer 792, the driving of the display device 810 when the EL layer is laminated is The voltage rise can be suppressed.

[0444] In the case where the charge generating layer 792 has a structure in which an electron acceptor is added to a hole transporting material, The electron acceptor is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroethylene. Quinodimethane (abbreviation: F 4 -TCNQ), chloranil, etc. Examples of the oxides include those of metals belonging to Groups 4 to 8 of the periodic table. are vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tantalum oxide Examples of the oxide include rhenium oxide, manganese oxide, and rhenium oxide.

[0445] In the case where the charge generating layer 792 has a structure in which an electron donor is added to an electron transporting material, The electron donor may be an alkali metal, an alkaline earth metal, a rare earth metal, or an element of the periodic table. Metals belonging to Groups 2 and 13 in the above and their oxides and carbonates can be used. Physically, lithium (Li), cesium (Cs), magnesium (Mg), calcium ( Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. It is preferable to use an organic compound such as tetrathianaphthalene as an electron donor. It may also be used as.

[0446] The light emitting element 572 can be fabricated by a vacuum process such as deposition, or by spin coating or inkjet printing. A solution process such as a jet method can be used. When a deposition method is used, deposition method, ion plating method, ion beam deposition method, molecular beam deposition method, vacuum deposition method, etc. Physical vapor deposition (PVD) or chemical vapor deposition (CVD) can be used. The functional layers included in the EL layer of the element (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection The charge generation layer and the charge deposition layer are formed by deposition (vacuum deposition, etc.), coating (dip coating, etc.) , die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (ink Jet printing, screen printing, offset printing, flexography It can be formed by a method such as a printing method, a gravure method, a microcontact method, etc. .

[0447] Note that each functional layer (hole injection layer, hole transport layer, etc.) constituting the EL layer of the light-emitting element shown in this embodiment The materials for the charge generating layer (electron transport layer, light emitting layer, electron transport layer, electron injection layer) and the charge generating layer are limited to the materials mentioned above. However, other materials can be used in combination as long as they fulfill the functions of each layer. Examples of the polymer compounds include oligomers, dendrimers, polymers, etc. ), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), Organic compounds (quantum dot materials, etc.) can be used. , colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, Core-type quantum dot materials and the like can be used.

[0448] The display device 810 shown in this embodiment can be applied to the light source shown in the first embodiment. By applying the display device 810 to the light source shown in the first embodiment, the light source can emit light. The elements can be arranged at high density. The facial features of a user of an electronic device, such as the facial expression of the user, can be accurately recognized.

[0449] FIG. 40A is a cross-sectional view showing a configuration example of an imaging device according to one embodiment of the present invention. As shown in FIG. 1, a transistor 1003 and a light-emitting element 5 are disposed between a substrate 1001 and a substrate 995. 72, the photoelectric conversion element 1010, and the colored layer 993, etc., can be sandwiched. Here, the transistor 1003 can be, for example, an OS transistor. In FIG. 40A, four transistors 1003 are shown.

[0450] An insulator 1002 is provided on a substrate 1001, and a transistor 100 is formed on the insulator 1002. An insulator 1004 is provided on the transistor 1003, and an insulator 100 An insulator 1005 is provided on the light emitting element 572 and a photoelectric conversion element 573. A region where the conversion element 1010 is provided and overlaps with the light emitting element 572 or the photoelectric conversion element 1010 In FIG. 40(A), the colored layer 993 is provided so as to have two light-emitting elements 572 ( The light-emitting element 572_1 and the light-emitting element 572_2, and the two photoelectric conversion elements 1010 (photoelectric conversion The photoelectric conversion element 1010_1 and the photoelectric conversion element 1010_2 are shown. 40(A) shows a configuration in which the transistor 1003 is electrically connected to the A colored layer having a function of transmitting red light is formed so as to have an area overlapping with the light emitting element 572_1. A colored layer 993R, which is a layer 993, is provided so as to have a region overlapping with the light-emitting element 572_2. As shown in FIG. 1, a colored layer 993IR having a function of transmitting infrared light is provided. The colored layer 1010_1 is arranged to overlap with the photoelectric conversion element 1010_1. 993R is provided, and a colored layer 99 is provided so as to have an area overlapping with the photoelectric conversion element 1010_2. A configuration in which 3IR is provided is shown.

[0451] The photoelectric conversion element 1010 detects light L irradiated from outside the imaging device. ex The received light is L ex The device has the function of converting the reflected light into an electrical signal corresponding to the illuminance of the light.

[0452] The light emitting element 572 preferably has a function of emitting white light and infrared light. The light emitted from the light emitting element 572_1 passes through the colored layer 993R and is captured as red light R. The light emitted from the light emitting element 572_2 is reflected by the color layer 99. The infrared light IR passes through the 3IR and is emitted outside the imaging device. The red light R and infrared light IR are reflected by an object and irradiated onto the photoelectric conversion element 1010. For example, the imaging device having the configuration shown in FIG. When applied to a device, red light R and infrared light IR are irradiated onto the face of the user of the eyeglass-type electronic device. Irradiated and reflected light L ex can be detected by the photoelectric conversion element 1010.

[0453] The imaging device has a function of detecting both red light and infrared light, so that the image can be captured by detecting either red light or infrared light. In the case where the imaging device has a function of detecting only one of the above, for example, It is possible to accurately detect the condition of the eyes of the user of the child device and the surrounding area. For example, the present invention provides an electronic device that accurately recognizes facial features of a user, such as the facial expression of the user. Therefore, the electronic device of one embodiment of the present invention can correctly measure the fatigue level, emotions, and the like of a user, for example. It is possible to have the function of accurately estimating the

[0454] Note that in the case where the display device of one embodiment of the present invention includes a photoelectric conversion element, the display device shown in FIG. In this case, the display device may have a function of transmitting red light. A light emitting element 572 having an area overlapping with a colored layer 993 having a function of transmitting infrared light, In addition to the light-emitting element 572 having an area overlapping with the colored layer 993 having the function of transmitting green light, A light emitting element 572 having an area overlapping with a coloring layer 993 having a function of transmitting blue light, A light emitting element 572 having a region overlapping with a coloring layer 993 having a function is provided.

[0455] The conductor 772, the EL layer 786, and the conductor 788 form the light-emitting element 572. In addition, the conductor 772, the active layer 1011, and the conductor 788 constitute a photoelectric conversion element 10. 10 is formed. Here, the transistor 1003 is electrically connected to the conductor 772. do.

[0456] The active layer 1011 is a laminated layer in which a p-type semiconductor and an n-type semiconductor are laminated to realize a pn junction. A pin junction is realized by stacking p-type, i-type, and n-type semiconductors. It may have a laminated structure or the like.

[0457] The semiconductor used in the active layer 1011 may be an inorganic semiconductor such as silicon or an organic compound. In particular, the use of an organic semiconductor material makes it possible to form a light-emitting element 57 The second EL layer 786 and the active layer 1011 can be easily formed by the same vacuum deposition method. This is preferable because it makes it easier to manufacture the products and allows the manufacturing equipment to be shared.

[0458] When an organic semiconductor material is used for the active layer 1011, the n-type semiconductor material is preferably fluorine. -ren (for example, C 60 , C 70 etc.) or its derivatives, etc. In addition, copper (II) phthalocyanine (CoPc) can be used as a p-type semiconductor material. pper(II) phthalocyanine (CuPc) and tetraphenyldiphenyl Tetraphenyldibenzoperiflanthene The active layer 1011 can be made of an organic semiconductor material having an electron donating property, such as SiO 2 (DBP). As a layered structure of electron-accepting and electron-donating semiconductor materials (pn layered structure) Alternatively, an electron-accepting semiconductor material and an electron-donating semiconductor material may be co-deposited between them. A stacked structure (pin stacked structure) with a bulk heterostructure layer may also be used. In order to suppress the dark current when no light is irradiated, the above pn stack structure or pin stack structure is used. A layer that functions as a hole blocking layer or an electron blocking layer is placed around the periphery (upper or lower) of the structure. A layer functioning as the above may be provided.

[0459] In the light-emitting element 572, an EL layer 786 is provided over a conductor 772. In the conversion element 1010, an active layer 1011 is provided on the conductor 772. A conductor 788 is provided to cover the EL layer 786 and the active layer 1011. The conductor 788 connects both the electrode of the light emitting element 572 and the electrode of the photoelectric conversion element 1010. It is possible to configure the device to serve both purposes.

[0460] FIG. 40B is a cross-sectional view illustrating a configuration example of an imaging device according to one embodiment of the present invention. The imaging device having the configuration shown in FIG. The difference from the imaging device having the configuration shown in FIG. 40(A) is that the imaging device is not shaded.

[0461] When the electronic device of one embodiment of the present invention has an imaging device having the structure illustrated in FIG. By providing a light source outside the device, the imaging device can detect light emitted from the light source. For example, the imaging device having the configuration shown in FIG. When applied to a device, the face of a user of the eyeglass-type electronic device is exposed to red light emitted from the light source. Colored light and infrared light are irradiated and the reflected light L ex is detected by the photoelectric conversion element 1010. It is possible.

[0462] By configuring an imaging device included in an electronic device of one embodiment of the present invention as shown in FIG. In this imaging device, the photoelectric conversion elements 1010 can be provided at high density.

[0463] The configuration examples exemplified in this embodiment and the corresponding drawings, etc., are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0464] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together.

[0465] (Embodiment 3) In this embodiment, a transistor that can be used in a display device according to one embodiment of the present invention will be described. We will explain about this.

[0466] <Transistor configuration example 1> 41A, 41B, and 41C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200A and the periphery of the transistor 200A. The pixel array 833, the gate driver circuit 821, the source driver circuit 822, and the like shown in the first embodiment 822 and the transistor 200A is applied to the transistor included in the circuit 840. can be done.

[0467] FIG. 41A is a top view of a transistor 200A. Also, FIGS. 41B and 41C are 41(B) is a cross-sectional view of a transistor 200A. 1A is a cross-sectional view of a portion indicated by a dashed line in the direction of the channel length of the transistor 200A. FIG. 41(C) is also a cross-sectional view. 1 is a cross-sectional view of the transistor 200A taken along the channel width direction. In the top view of 41(A), some elements are omitted for clarity of illustration.

[0468] The transistor 200A includes a metal oxide 230a disposed on a substrate (not shown). 2, a metal oxide 230b is disposed on the metal oxide 230a, and The conductor 242a and the conductor 242b are arranged at a distance from each other. and on the conductor 242b, and an opening is formed between the conductor 242a and the conductor 242b. The insulating layer 280 is formed on the insulating layer 280, the conductor 260 disposed in the opening, and the metal oxide 230b. The conductor 242a, the conductor 242b, and the insulator 280 are disposed between the conductor 260 and the insulator 280. The insulator 250 is connected to the metal oxide 230b, the conductor 242a, the conductor 242b, and the insulator 250. The metal oxide 230c is disposed between the insulating body 280 and the insulator 250. As shown in FIG. 41B and FIG. 41C, the upper surface of the conductor 260 is covered with the insulator 250. 254, metal oxide 230c, and insulator 280. In the following, the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c These may be collectively referred to as metal oxide 230. b may be collectively referred to as conductor 242.

[0469] As shown in FIG. 41B, the transistor 200A includes a conductor 242a and a conductor 242b. The side surface of the transformer 260 of the transformer 260 shown in FIG. The resistor 200A is not limited to this, and may be formed of the conductors 242a and 242b. The angle between the side and bottom is 10° to 80°, preferably 30° to 60°. In addition, the opposing side surfaces of the conductor 242a and the conductor 242b may have multiple surfaces. It may be possible.

[0470] As shown in FIGS. 41B and 41C, the insulator 224, the metal oxide 230a, the metal oxide The insulating layer 230b is a conductor 242a, a conductor 242b, and a metal oxide 230c. 80 and an insulator 254 is preferably disposed between the insulator 254 and the As shown in FIG. 41(B) and FIG. 41(C), the side surface of the metal oxide 230c, the upper surface of the conductor 242a, and The side surface, the top surface and side surface of the conductor 242b, the side surface of the metal oxide 230a, and the top surface and side surface of the metal oxide 230b It is preferable that the insulating material 224 has a side surface and an area in contact with the top surface of the insulating material 224 .

[0471] In the transistor 200A, a region in which a channel is formed (hereinafter, a channel forming region ) and in the vicinity thereof, metal oxide 230a, metal oxide 230b, and Although a configuration in which three layers of metal oxide 230c are laminated is shown, the present invention is not limited to this. For example, a two-layer structure of metal oxide 230b and metal oxide 230c, or a four-layer structure The above-mentioned laminated structure may be provided. Although 60 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, the conductor 260 may have a single-layer structure or a laminated structure of three or more layers. In addition, each of the metal oxides 230a, 230b, and 230c is 2 It may have a laminated structure of more than one layer.

[0472] For example, metal oxide 230c may include a first metal oxide and a second metal oxide on the first metal oxide. In the case where the first metal oxide has a laminated structure made of a metal oxide, the first metal oxide is the same as the metal oxide 230b. The second metal oxide preferably has a composition similar to that of the metal oxide 230a. It is.

[0473] Here, the conductor 260 functions as a gate electrode of the transistor, and the conductors 242a and The conductors 242b function as a source electrode and a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. The conductor 260, the conductor 242a, and the conductor 242b are formed so as to be embedded in the region. The arrangement of the conductive body 242b is selected to be self-aligned with respect to the opening of the insulator 280. In the transistor 200A, the gate electrode is connected between the source electrode and the drain electrode. Therefore, the conductor 260 can be arranged in a self-aligning manner by providing a margin for alignment. Since the transistor 200A can be formed without any need for a metal layer, the area occupied by the transistor 200A can be reduced. This allows the display device to have high resolution. It can be made into an edge.

[0474] As shown in FIG. 41, the conductor 260 is a conductor 2 provided inside the insulator 250. 60a, and a conductor 260b provided so as to be embedded inside the conductor 260a. It is preferable to have

[0475] As shown in FIGS. 41(A), (B), and (C), the transistor 200A has a substrate ( (not shown). 16, a conductor 205 disposed so as to be embedded in an insulator 216, and an insulator 216. An insulator 222 is disposed on the conductor 205, and an insulator 223 is disposed on the insulator 222. 24. Also, a metal oxide 230a is disposed on the insulator 224. It is preferable that the above-mentioned

[0476] In addition, an insulator 274 serving as an interlayer film and an insulator 2 Here, the insulator 274 is preferably disposed between the conductor 260 and the insulator 25. 0, the insulator 254, the metal oxide 230c, and the upper surface of the insulator 280. is preferred.

[0477] The insulators 222, 254, and 274 are made of hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). For example, the insulator 22 has a function of suppressing the diffusion of at least one of the above. 2, insulator 254, and insulator 274 are insulators 224, 250, and insulator 28. It is preferable that the hydrogen permeability is lower than 0. Also, the insulator 222 and the insulator 254 are made of an acid. The material has a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.). For example, the insulator 222 and the insulator 254 are preferably , and preferably has a lower oxygen permeability than insulator 280.

[0478] Here, the insulator 224, the metal oxide 230, and the insulator 250 are insulator 280 and insulator 270. The insulator 281 is separated from the insulator 254 by the insulator 274. 224, metal oxide 230, and insulator 250, insulator 280, and insulator 281 This makes it possible to suppress the inclusion of impurities such as hydrogen and excess oxygen.

[0479] A conductor 240 (conductor) electrically connected to the transistor 200A and functioning as a plug It is preferable that a conductor 240a and a conductor 240b are provided. An insulator 241 (insulator 241a and insulator 241b) is provided on the side of the functional conductor 240. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 2 An insulator 241 is provided in contact with the inner wall of the opening of the heat exchanger 81. A first conductor of the conductor 240 is provided on the inner side, and a second conductor of the conductor 240 is provided on the inner side. Here, the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 may be set to be equal to or larger than the height of the upper surface of the conductor 240. In the transistor 200A, the first conductor of the conductor 240 is The present invention is not limited to the above-described configuration in which the first conductor and the second conductor of the conductor 240 are stacked. For example, the conductor 240 may be a single layer or a laminated structure of three or more layers. In the case where the structure has a laminated structure, ordinal numbers are given in the order of formation, and the layers are divided into groups. There may be cases where it is different.

[0480] The transistor 200A also includes a metal oxide 230 (metal oxide 230a, metal oxide 230b, and metal oxide 230c) function as oxide semiconductors. It is preferable to use a metal oxide (hereinafter, also referred to as an oxide semiconductor) that has a high conductivity. The metal oxide 230 that is to be the channel forming region is a band gap metal oxide, as described above. It is preferable to use one having a gap of 2 eV or more, preferably 2.5 eV or more.

[0481] As shown in FIG. 41B, the metal oxide 230b is formed in a region that does not overlap with the conductor 242. The thickness of the film in the region where the conductive material 242 overlaps may be thinner than the thickness of the film in the region where the conductive material 242 overlaps. When forming the conductive layer 242a and the conductive layer 242b, a part of the upper surface of the metal oxide layer 230b is removed. A conductive film that becomes the conductor 242 is formed on the upper surface of the metal oxide 230b. When the film is formed, a region with low resistance may be formed near the interface with the conductive film. Thus, the metal oxide 230b is disposed between the conductor 242a and the conductor 242b on the upper surface of the metal oxide 230b. By removing the low resistance region, the formation of a channel in the region is suppressed. It is possible.

[0482] According to one embodiment of the present invention, a display device having a small-sized transistor and high resolution can be provided. Alternatively, a display device having a transistor with a large on-state current and high luminance can be provided. Alternatively, a display device having a high-speed transistor and a high-speed operation can be provided. Alternatively, a highly reliable display device having a transistor with stable electrical characteristics can be provided. Alternatively, a display device having a transistor with low off-state current and low power consumption can be provided. It is possible to provide a display device with low

[0483] Detailed structure of a transistor 200A that can be used in a display device according to one embodiment of the present invention This article explains:

[0484] The conductor 205 is arranged so as to have an overlapping area with the metal oxide 230 and the conductor 260. In addition, the conductor 205 is preferably embedded in the insulator 216. Therefore, it is preferable to improve the flatness of the upper surface of the conductor 205. For example, The average surface roughness (Ra) of the upper surface is 1 nm or less, preferably 0.5 nm or less, and more preferably 0 This allows the insulator 224 formed on the conductor 205 to be 0.3 nm or less. and improve the crystallinity of the metal oxide 230b and the metal oxide 230c. It is possible.

[0485] Here, the conductor 260 functions as a first gate (also called a top gate) electrode. The conductor 205 may be used as a second gate (also called a back gate) electrode. In this case, the potential applied to the conductor 205 may be changed to the potential applied to the conductor 260. By changing the potential of transistor 200A independently of the potential of the th Control In particular, applying a negative potential to the conductor 205 can control the transistor. V of 200A th It is possible to reduce the off-current by increasing the Therefore, applying a negative potential to the conductor 205 increases the current flow rate of the conductor 260 compared to when no negative potential is applied. It is possible to reduce the drain current of the transistor 200A when the potential applied to the can.

[0486] In addition, the conductor 205 is provided to be larger than the channel formation region in the metal oxide 230. In particular, as shown in FIG. 41C, the conductor 205 is a channel of the metal oxide 230. It is preferable that the film is stretched in the region outside the end portion intersecting with the width direction of the film. On the outer side of the side surface of the metal oxide 230 in the channel width direction, a conductor 205 and a conductor It is preferable that the electric conductor 260 is overlapped with an insulator therebetween.

[0487] With the above-mentioned configuration, the electric field of the conductor 260 having the function of the first gate electrode and The metal oxide 23 is then oxidized by the electric field of the conductor 205, which functions as a second gate electrode. 0 channel forming region can be electrically surrounded.

[0488] As shown in FIG. 41C, the conductor 205 is extended to function as a wiring. However, the present invention is not limited to this, and a conductive material that functions as a wiring may be provided under the conductive material 205. A body may be provided.

[0489] The conductor 205 is made of a conductive material mainly composed of tungsten, copper, or aluminum. Although the conductor 205 is illustrated as a single layer, it may have a laminated structure. For example, a laminate of titanium or titanium nitride and the above conductive material may be used.

[0490] In addition, hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide are present under the conductor 205. Molecule (N 2 O, NO, NO 2 etc.), and has the function of suppressing the diffusion of impurities such as copper atoms (see above). A conductor through which the impurities are unlikely to permeate may be provided. A conductive material that has a function of suppressing the diffusion of at least one of the oxygen molecules (such as oxygen molecules) In this specification, it is preferable to provide a conductive material to suppress the diffusion of impurities or oxygen. The function of suppressing the diffusion of either or both of the above impurities and the above oxygen is Let us assume that.

[0491] By providing a conductor having a function of suppressing the diffusion of oxygen under the conductor 205, It is possible to prevent the conductivity of the conductive material 205 from decreasing due to oxidation. Examples of conductors having this function include tantalum, tantalum nitride, ruthenium, or It is preferable to use ruthenium oxide or the like. Therefore, the conductor 205 is preferably made of the above conductor. The conductive material may be a single layer or a multilayer.

[0492] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that the insulator has a function as a barrier insulating film that suppresses the above-mentioned problem. 214 is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, and a nitrogen oxide molecule (N 2 O. NO, NO 2 etc.), and has the function of suppressing the diffusion of impurities such as copper atoms (the above impurities It is preferable to use an insulating material. An insulating material that has a function of suppressing the diffusion of at least one of the molecules (the oxygen is difficult to permeate). It is preferable to use a non-reactive material.

[0493] For example, it is preferable to use aluminum oxide or silicon nitride as the insulator 214. This allows impurities such as water or hydrogen to enter the transistor from the substrate side rather than the insulator 214. It is possible to suppress the diffusion of the oxide contained in the insulator 224 to the 200A side. This can prevent the element from diffusing toward the substrate side beyond the insulator 214.

[0494] The insulators 216, 280, and 281, which function as interlayer films, are It is preferable that the relative dielectric constant is lower than that of 214. By using a material with a low relative dielectric constant as the interlayer film, , the parasitic capacitance occurring between the wirings can be reduced. 0, and as the insulator 281, silicon oxide, silicon oxynitride, silicon nitride oxide, nitrogen Silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon and nitrogen Silicon oxide doped with oxygen, silicon oxide having vacancies, or the like may be used appropriately.

[0495] The insulators 222 and 224 function as gate insulators.

[0496] Here, the insulator 224 in contact with the metal oxide 230 is preferably capable of desorbing oxygen by heating. In this specification, the oxygen released by heating may be referred to as excess oxygen. For example, The insulator 224 may be made of silicon oxide, silicon oxynitride, or the like. By providing an insulator containing the metal oxide 230 in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 can be eliminated. This can reduce the resistance and improve the reliability of the transistor 200A.

[0497] Specifically, the insulator 224 is made of an oxide material from which some oxygen is released when heated. The oxide that releases oxygen by heating is preferably a TDS (Thermal Desorption Absorption Spectroscopy (Absorptive Spectroscopy) analysis revealed that the amount of oxygen in terms of oxygen atoms was The amount of desorption is 1.0×10 18 atoms / cm 3 More than 1.0×10 19 ato ms / cm 3 More preferably, 2.0×10 19 atoms / cm 3 More than or equal to 3 .0×10 20 atoms / cm 3 The oxide film is as above. The surface temperature of the film in the above condition is 100°C to 700°C or 100°C to 400°C. The lower range is preferred.

[0498] As shown in FIG. 41C, the insulator 224 does not overlap with the insulator 254 and is made of metal. The thickness of the film in the region not overlapping with the oxide 230b may be thinner than the thickness of the film in the other region. In the insulator 224, a portion that does not overlap the insulator 254 and the metal oxide 230b is The thickness of the non-oxidized region is preferably such that the oxygen can be sufficiently diffused.

[0499] The insulator 222, like the insulator 214, prevents impurities such as water or hydrogen from entering the transistor from the substrate side. It is preferable that the insulating film has a function as a barrier insulating film that suppresses the inclusion of the insulating film in the transistor 200A. For example, it is preferable that the insulator 222 has a lower hydrogen permeability than the insulator 224. The insulator 224, the metal oxide 230, and the insulator 254 and the insulator 274 are connected to each other. By surrounding the transistor with the insulator 250, impurities such as water or hydrogen from the outside can be prevented from entering the transistor. It is possible to prevent the current from reaching 200A.

[0500] Further, the insulator 222 is resistant to diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the above-mentioned oxygen from passing through (i.e., the insulator 2 is less likely to pass through). Preferably, insulator 222 has a lower oxygen permeability than insulator 224. By having the function of suppressing the diffusion of impurities, the oxygen contained in the metal oxide 230 does not flow to the substrate side. In addition, the conductor 205 is preferably a material having a low conductivity. This can suppress reaction between the oxygen contained in the metal oxide 230 and the oxygen contained in the metal oxide 230 .

[0501] The insulator 222 is an oxide of one or both of aluminum and hafnium, which are insulating materials. It is advisable to use an insulator containing oxides of either or both of aluminum and hafnium. As an insulator, it is preferable to use aluminum oxide or hafnium oxide. It is preferable to use oxides containing aluminum and hafnium (hafnium aluminate). When the insulator 222 is formed using such a material, the insulator 222 is preferably a metal oxide. The release of oxygen from the metal oxide 230 and the removal of the metal oxide 230 from the periphery of the transistor 200A. The layer functions as a layer for suppressing the intrusion of impurities such as hydrogen into the semiconductor substrate.

[0502] Alternatively, for example, aluminum oxide, bismuth oxide, or germanium oxide may be added to these insulators. , niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, oxide Zirconium may be added, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the body.

[0503] The insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, or oxide. Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi O 3 ), or (Ba,Sr)TiO 3 Insulation materials, including so-called high-k materials such as (BST) As transistors become smaller and more highly integrated, Thinning of the gate insulator may cause problems such as leakage current. By using a high-k material as an insulator that functions as a gate insulator, the transistor can be This makes it possible to reduce the gate potential during start operation.

[0504] The insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In this case, the laminate structure is not limited to a laminate structure made of the same material, and may be a laminate structure made of different materials. For example, an insulator similar to the insulator 224 may be provided under the insulator 222.

[0505] The metal oxide 230 is a metal oxide 230a and a metal oxide 230 on the metal oxide 230a. b and a metal oxide 230c on the metal oxide 230b. By having the metal oxide 230a in the lower portion, the structure formed below the metal oxide 230a It is possible to suppress the diffusion of impurities from the metal to the metal oxide 230b. By having the metal oxide 230c on the metal oxide 230b, The diffusion of impurities from the structure formed on the other side to the metal oxide 230b can be suppressed. do.

[0506] The metal oxide 230 has a laminated structure of multiple oxide layers with different atomic ratios of each metal atom. Specifically, the metal oxide used for the metal oxide 230a has the following properties: The atomic ratio of element M in the constituent elements is It is preferable that the atomic ratio of the element M in the metal oxide 230a is larger than that of the element M in the metal oxide 230a. In the metal oxide used in the present invention, the atomic ratio of element M to In is In the metal oxide, the atomic ratio of element M to In is preferably larger than that of element In. In the metal oxide used for the metal oxide 230b, the atomic ratio of In to the element M is The ratio of the number of atoms of In to the element M in the metal oxide 230a is larger than that in the metal oxide. In addition, the metal oxide 230c is preferably larger than the metal oxide 230a or the metal oxide Any metal oxide that can be used for 230b can be used.

[0507] The metal oxide 230a, the metal oxide 230b, and the metal oxide 230c have crystallinity. It is preferable to use CAAC-OS (c-axis aligned crystal alignment) It is preferable to use CA Crystalline oxides such as AC-OS have few impurities and defects (oxygen vacancies, etc.) and are highly crystalline. Therefore, the metal oxide film formed by the source electrode or the drain electrode is This can suppress the extraction of oxygen from the oxide 230b. Even in this case, it is possible to suppress the extraction of oxygen from the metal oxide 230b. Therefore, the transistor 200A is not subject to high temperatures during the manufacturing process (so-called thermal budget). ) is stable.

[0508] In addition, the energy of the conduction band minimum of the metal oxide 230a and the metal oxide 230c is It is preferable that the energy of the valence layer is higher than the energy of the bottom of the conduction band of the oxide 230b. The electron affinity of the metal oxide 230a and the metal oxide 230c is smaller than that of the metal oxide 230b. In this case, the metal oxide 230c is preferably smaller than the electron affinity of the metal oxide 230c. It is preferable to use a metal oxide that can be used for 30a. In the metal oxide used in the product 230c, the atomic ratio of element M in the constituent elements is In the metal oxide used in 230b, the atomic ratio of element M in the constituent elements is greater than that In addition, in the metal oxide 230c, the element M relative to In is preferably The atomic ratio of element M to In in the metal oxide used for the metal oxide 230b is It is preferable that the atomic ratio is larger than that of the metal oxide 230b. In the metal oxide 230c, the atomic ratio of In to the element M is It is preferable that the atomic ratio of In to the element M is larger than that of In.

[0509] Here, at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c, In other words, the energy level of the conduction band edge changes gradually. The conduction band minimum at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c The energy level can be said to change continuously or to be a continuous junction. In order to achieve this, the interface between the metal oxide 230a and the metal oxide 230b and the metal oxide 230b The defect level density of the mixed layer formed at the interface between the metal oxide 230c and the silicon dioxide 230 is reduced. stomach.

[0510] Specifically, the metal oxide 230a and the metal oxide 230b, the metal oxide 230b and the metal oxide The object 230c has a common element other than oxygen (as a main component), so that the defect level density is For example, a low intermixed layer can be formed when the metal oxide 230b is an In-Ga-Zn oxide. In the case of the oxide, the metal oxide 230a and the metal oxide 230c are In-Ga-Zn oxide. The metal oxide 230c may be a gallium oxide, Ga-Zn oxide, or the like. For example, a layer structure may be used. A laminated structure of In-Ga-Zn oxide on the In-Ga-Zn oxide, or a laminated structure of In-Ga-Zn oxide and the In-Ga- A laminated structure of gallium oxide on zinc oxide can be used. A laminated structure of a-Zn oxide and an oxide not containing In was used as the metal oxide 230c. It's fine.

[0511] Specifically, the metal oxide 230a is In:Ga:Zn=1:3:4 [atomic ratio], Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. b is In:Ga:Zn=4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] The metal oxide 230c may be In:Ga:Zn=1: 3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or a metal oxide having a Ga:Zn=2:5 [atomic ratio] may be used. A specific example of the metal oxide 230c having a laminated structure is In:Ga:Zn=4: 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio] stacked structures, In:Ga:Zn = 4:2:3 [atomic ratio] and Ga:Zn = 2:5 [atomic ratio], In:Ga Examples include a laminated structure of Zn=4:2:3 [atomic ratio] and gallium oxide.

[0512] At this time, the main path of the carriers is the metal oxide 230b. By configuring the metal oxide 230a and the metal oxide 230c as described above, Defect levels at the interface between metal oxide 230b and metal oxide 230c The density can be reduced. Therefore, the effect of interface scattering on carrier conduction is small. As a result, the transistor 200A can achieve high on-state current and high frequency characteristics. In addition, when the metal oxide 230c has a laminated structure, the above-mentioned metal oxide 230b and the metal oxide In addition to the effect of reducing the defect state density at the interface with the metal oxide 230c, It is expected that the diffusion of the constituent elements of the insulating material 250 to the insulating material 250 side is suppressed. Specifically, the metal oxide 230c has a laminated structure, and an oxide layer not including In is provided above the laminated structure. In order to position the object, it is possible to suppress In that may diffuse to the insulator 250 side. 250 acts as a gate insulator, so if In diffuses, the transistor characteristics Therefore, by forming the metal oxide 230c into a laminated structure, a highly reliable surface can be obtained. It is therefore possible to provide a display device.

[0513] The metal oxide 230 is preferably a metal oxide that functions as an oxide semiconductor. For example, the metal oxide that will be the channel forming region of the metal oxide 230 is a band gap metal oxide. It is preferable to use an electron pump having a peak of 2 eV or more, preferably 2.5 eV or more. By using metal oxides with a wide band gap, the off-state current of transistors can be reduced. By using such a transistor, a display device with low power consumption can be provided. can.

[0514] On the metal oxide 230b, a conductor 242 that functions as a source electrode and a drain electrode is formed. (Conductor 242a and conductor 242b) are provided. The conductor 242 is made of aluminum. Aluminum, Chromium, Copper, Silver, Gold, Platinum, Tantalum, Nickel, Titanium, Molybdenum, Tungsten Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, Selected from the group consisting of ruthenium, indium, ruthenium, iridium, strontium, and lanthanum. or an alloy containing the above-mentioned metal elements or a combination of the above-mentioned metal elements. For example, tantalum nitride, titanium nitride, tungsten, Nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use an oxide containing tantalum nitride, titanium nitride, titanium and aluminium. Aluminum nitrides, tantalum and aluminum nitrides, ruthenium oxide, nitrides Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel The material is a conductive material that is resistant to oxidation or that maintains its conductivity even when it absorbs oxygen. preferable.

[0515] By providing the conductor 242 so as to be in contact with the metal oxide 230, In the vicinity of the conductor 242, the oxygen concentration may decrease. In the vicinity of the conductor 242, the metal contained in the conductor 242 and the components of the metal oxide 230 In such a case, the conductive metal oxide 230 may form a metal compound layer containing The carrier density increases in the region near the body 242, and the region becomes a low resistance region.

[0516] Here, the region between the conductor 242a and the conductor 242b overlaps the opening of the insulator 280. This allows the conductor 260 to be self-aligned between the conductor 242a and the conductor 242b. The components can be arranged in a coordinated manner.

[0517] The insulator 250 functions as a gate insulator. The insulator 250 is preferably disposed in contact with the upper surface. Silicon oxide nitride, silicon nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon Silicon oxide, silicon oxide doped with carbon and nitrogen, and silicon oxide with vacancies are used. In particular, silicon oxide and silicon oxynitride are stable against heat. preferable.

[0518] The insulator 250, like the insulator 224, has an impurity concentration of water or hydrogen in the insulator 250. The thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less. It is preferred.

[0519] In addition, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable that the insulating material 250 has a function of suppressing oxygen diffusion from the insulating material 250 to the conductor 260. This makes it possible to suppress oxidation of the conductor 260 due to oxygen contained in the insulator 250. can.

[0520] The metal oxide may also function as a part of the gate insulator. Therefore, when silicon oxide or silicon oxynitride is used for the insulator 250, the metal oxide It is preferable to use metal oxide, which is a high-k material with a high dielectric constant, for the gate. By forming the insulator into a stacked structure of the insulator 250 and the metal oxide, the transistor 20 0A can be made into a transistor that is stable against heat and has a high relative dielectric constant. The gate potential applied during transistor operation is then adjusted while maintaining the physical thickness of the gate insulator. In addition, it is possible to reduce the equivalent oxide thickness of the insulator that functions as the gate insulator. It is possible to reduce the EOT.

[0521] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, tungsten The metal is selected from the group consisting of tin, titanium, tantalum, nickel, germanium, magnesium, etc. Metal oxides containing one or more of these metals can be used. In particular, aluminum , or hafnium oxide, which are insulators containing one or both of these oxides. Hafnium or oxides containing aluminum and hafnium (hafnium aluminate) It is preferable to use the following.

[0522] Although the conductor 260 is shown as having a two-layer structure in FIG. 41, it may have a single layer structure or a structure having three or more layers. The above laminated structure may also be used.

[0523] The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide. Elementary molecules (N 2 O, NO, NO 2 etc.), and a conductive material that suppresses the diffusion of impurities such as copper atoms. Alternatively, at least one of oxygen (e.g., oxygen atoms, oxygen molecules, etc.) is preferably used. It is preferable to use a conductive material having the function of suppressing the diffusion of the above-mentioned (1).

[0524] In addition, the conductor 260a has a function of suppressing the diffusion of oxygen, and thus the conductor 260a is included in the insulator 250. The conductive material 260b is prevented from being oxidized by oxygen that is introduced into the conductive material 260b, thereby preventing the conductivity of the conductive material 260b from decreasing. Examples of conductive materials that have the function of suppressing oxygen diffusion include It is preferable to use tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like.

[0525] The conductor 260b is made of a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 260 also functions as wiring, It is preferable to use a highly conductive material such as tungsten, copper, or aluminum. The conductor 260b may have a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0526] In addition, as shown in FIGS. 41(A) and (C), the metal oxide 230b does not overlap with the conductor 242. In other words, in the channel formation region of the metal oxide 230, the metal oxide 2 The side surface of the first gate electrode 30 is covered with the conductor 260. The electric field of the conductor 260 having the function of acting as a barrier is easily applied to the side surface of the metal oxide 230. This increases the on-state current of the transistor 200A, and the periphery of the transistor 200A. The wave number characteristics can be improved.

[0527] The insulator 254, like the insulator 214, is designed to prevent impurities such as water or hydrogen from entering the insulator 280 side. Therefore, it has a function as a barrier insulating film that prevents the inclusion of For example, it is preferable that the insulator 254 has a lower hydrogen permeability than the insulator 224. Furthermore, as shown in FIG. 41(B) and (C), the insulator 254 is made of a metal oxide 230. the side surface of the conductor 242c, the top surface and side surface of the conductor 242a, the top surface and side surface of the conductor 242b, and the metal oxide 23 0a, the side of metal oxide 230b, and an area in contact with the top surface of insulator 224. With such a configuration, hydrogen contained in the insulator 280 is preferably 242a, conductor 242b, metal oxide 230a, metal oxide 230b, and insulator 22 4 from penetrating into the metal oxide 230 from the top or side surfaces.

[0528] Additionally, the insulator 254 is resistant to the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the above-mentioned oxygen from passing through (i.e., the insulator 2 is less likely to pass through). Preferably, 54 has a lower oxygen permeability than insulator 280 or insulator 224 .

[0529] The insulator 254 is preferably formed by sputtering. The insulator 224 is formed by sputtering in an atmosphere containing oxygen. Oxygen can be added to the area adjacent to the contact area 254. This allows the insulating layer to be removed from the area. Oxygen can be supplied to the metal oxide 230 through the insulator 224. 254 has a function of suppressing the diffusion of oxygen upward, so that oxygen is prevented from diffusing into the metal oxide 230 In addition, the insulator 222 can prevent the diffusion of the insulating material 222 from the lower By having a function of suppressing the diffusion of oxygen to the metal oxide 230, oxygen is prevented from diffusing from the metal oxide 230 to the substrate side. In this way, the formation of the channel of the metal oxide 230 can be suppressed. This reduces the oxygen vacancies in the metal oxide 230 and This can suppress the normally-on state of the transistor.

[0530] The insulator 254 may be, for example, an oxide of one or both of aluminum and hafnium. It is preferable to form an insulator containing oxide of either or both of aluminum and hafnium. Insulators containing aluminum oxide, hafnium oxide, or aluminum and hafnium oxide It is preferable to use an oxide containing hafnium (eg, hafnium aluminate).

[0531] The insulator 254 having a barrier property against hydrogen is used to separate the insulator 224, the insulator 250, and the By covering the metal oxide 230, the insulator 280 is insulated from the insulator 224 by the insulator 254, and the metal oxide 230 is insulated from the insulator 224 by the insulator 254. The oxide 230 and the insulator 250 are separated from each other. Since impurities such as hydrogen can be prevented from entering from the outside, the current of the transistor 200A can be reduced. Therefore, the thermal characteristics and reliability can be improved.

[0532] The insulator 280 is formed by connecting the insulator 224, the metal oxide 230, and the conductor via the insulator 254. For example, the insulator 280 may be silicon oxide or silicon oxynitride. , silicon oxide nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon It is preferable to use silicon oxide doped with hydrogen and nitrogen, or silicon oxide having vacancies. In particular, silicon oxide and silicon oxynitride are preferable because they are thermally stable. In addition, materials such as silicon oxide, silicon oxynitride, and silicon oxide with pores can be easily heated. This is preferable because it makes it easier to form a region containing more desorbed oxygen.

[0533] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. The top surface of the edge 280 may be flattened.

[0534] The insulator 274, like the insulator 214, is designed to prevent impurities such as water or hydrogen from being mixed into the insulator 280. It is preferable that the insulator 274 has a function as a barrier insulating film that suppresses the insulator 274 from being damaged. For example, an insulator that can be used for the insulator 214, the insulator 254, etc. is used. This can be done.

[0535] In addition, it is preferable to provide an insulator 281 that functions as an interlayer film on the insulator 274. The insulator 281, like the insulator 224, has a reduced concentration of impurities such as water or hydrogen in the film. It is preferable that the above is done.

[0536] In addition, the openings formed in the insulators 281, 274, 280, and 254 The conductor 240a and the conductor 240b are disposed on the substrate 240. The conductors 240a and 240b are disposed opposite each other with the conductor 260 in between. The height of the upper surface may be flush with the upper surface of the insulator 281 .

[0537] In addition, the insulators 281, 274, 280, and 254 are in contact with the inner walls of the openings. An insulator 241a is provided, and the first conductor of the conductor 240a is formed in contact with the side surface of the insulator 241a. A conductor 242a is located at least partially on the bottom of the opening. The conductor 240a contacts the conductor 242a. Similarly, the insulator 281, the insulator 274, the insulator 280 and an insulator 241b is provided in contact with the inner wall of the opening of the insulator 254. The first conductor of the conductor 240b is formed in contact with the bottom of the opening. Conductor 242b is located in one portion, and conductor 240b contacts conductor 242b.

[0538] The conductor 240a and the conductor 240b are mainly made of tungsten, copper, or aluminum. It is preferable to use a conductive material having a thickness of 100 μm. It may also have a layered structure.

[0539] In addition, when the conductor 240 has a laminated structure, the metal oxide 230a, the metal oxide 230b, Conductors in contact with the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 The above-mentioned conductive material having the function of suppressing the diffusion of impurities such as water or hydrogen is used for the body. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or Ruthenium oxide is preferably used. In addition, it is preferable to suppress the diffusion of impurities such as water or hydrogen. The conductive material having the function of providing the conductive layer may be used in a single layer or a multilayer structure. As a result, the oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. In addition, impurities such as water or hydrogen can be prevented from being generated from the upper layer of the insulator 281. is prevented from being mixed into the metal oxide 230 through the conductor 240a and the conductor 240b. It is possible.

[0540] The insulator 241a and the insulator 241b can be used, for example, for the insulator 254. The insulator 241a and the insulator 241b are in contact with the insulator 254. Therefore, impurities such as water or hydrogen from the insulator 280 and the like can be prevented from entering the conductor 240a and the conductor It is possible to prevent the metal oxide 230 from being mixed with the conductive material 240b. The oxygen contained in the insulator 280 is prevented from being absorbed by the conductors 240a and 240b. It can be controlled.

[0541] Although not shown, the upper surface of the conductor 240a and the upper surface of the conductor 240b are in contact with each other to form wiring. The conductor functioning as the wiring may be tungsten, copper, or the like. It is preferable to use a conductive material containing aluminum as a main component. The body may be a laminated structure, for example a laminate of titanium or titanium nitride and the above conductive materials. The conductor may be formed so as to be embedded in an opening provided in the insulator. .

[0542] <Transistor configuration example 2> 42A, 42B, and 42C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200B and the periphery of the transistor 200B. Transistor 200B is a modification of transistor 200A.

[0543] FIG. 42A is a top view of the transistor 200B. 2(C) is a cross-sectional view of the transistor 200B. FIG. 2A is a cross-sectional view of a portion indicated by a dashed line B1-B2 in FIG. 2A, showing the channel of a transistor 200B. Also, Figure 42(C) is a cross-sectional view of the B3-B4 line in Figure 42(A). FIG. 2 is a cross-sectional view of the area indicated by the line, and is also a cross-sectional view of the transistor 200B in the channel width direction. In the top view of FIG. 42(A), some elements are omitted for clarity. do.

[0544] In the transistor 200B, the conductor 242a and the conductor 242b are formed on the metal oxide 230c. , the insulator 250, and the conductor 260. The transistor 200B can be a transistor with a high on-state current. can be a transistor that is easy to control.

[0545] The conductor 260 functioning as a gate electrode is a conductor 260a and a conductor on the conductor 260a. The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a copper atom, or the like. It is preferable to use a conductive material that has a function of suppressing the diffusion of impurities. For example, a conductive material having a function of suppressing the diffusion of at least one of oxygen atoms, oxygen molecules, etc. It is preferable to use a

[0546] Since the conductor 260a has a function of suppressing the diffusion of oxygen, the material of the conductor 260b In other words, by having the conductor 260a, the conductor 260 The oxidation of b is suppressed, and the decrease in electrical conductivity can be suppressed.

[0547] In addition, the upper surface and side surface of the conductor 260, the side surface of the insulator 250, and the side surface of the metal oxide 230c It is preferable to provide an insulator 254 so as to cover the surface. It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as silicon and oxygen.

[0548] By providing the insulator 254, oxidation of the conductor 260 can be suppressed. By providing the insulator 254, impurities such as water and hydrogen contained in the insulator 280 can be prevented from being absorbed by the transistor 20. It is possible to suppress diffusion to 0B.

[0549] <Transistor configuration example 3> 43A, 43B, and 43C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200C and the periphery of the transistor 200C. Transistor 200C is a modification of transistor 200A.

[0550] FIG. 43A is a top view of the transistor 200C. In addition, FIG. 43B and FIG. 3(C) is a cross-sectional view of the transistor 200C. FIG. 2A is a cross-sectional view of the portion indicated by the dashed line C1-C2 in FIG. 2A, showing the channel of the transistor 200C. Also, Figure 43(C) is a cross-sectional view of the C3-C4 chain in Figure 43(A). FIG. 2 is a cross-sectional view of the area indicated by the line, and is also a cross-sectional view of the transistor 200C in the channel width direction. In the top view of FIG. 43(A), some elements are omitted for clarity. do.

[0551] The transistor 200C has an insulator 250 on the metal oxide 230c. A metal oxide 252 is provided on the metal oxide 252. A conductor 260 is provided on the metal oxide 252. An insulator 270 is provided on the body 260. Also, an insulator 271 is provided on the insulator 270.

[0552] The metal oxide 252 preferably has a function of suppressing oxygen diffusion. By providing a metal oxide 252 that suppresses the diffusion of oxygen between the conductor 260 and the conductive material, The diffusion of oxygen to the metal oxide 230 is suppressed. In other words, the amount of oxygen supplied to the metal oxide 230 is reduced. In addition, the oxidation of the conductor 260 can be suppressed.

[0553] The metal oxide 252 may function as a part of the gate electrode. The oxide semiconductor that can be used as the metal oxide 230 is used as the metal oxide 252. In this case, the conductor 260 can be formed as a film by a sputtering method. The electrical resistance of oxide 252 can be reduced to make it a conductor. The electrode can be called an e Conductor.

[0554] The metal oxide 252 may also function as part of the gate insulator. Therefore, the insulator 250 is made of a material having high thermal stability, such as silicon oxide or silicon oxynitride. When using a metal oxide 252, a metal oxide that is a high-k material with a high dielectric constant is used. By using such a layered structure, the transistor 200C can be made resistant to heat. Therefore, the transistor can be made stable against the physical film and has a high relative dielectric constant. This makes it possible to reduce the gate potential applied during transistor operation while maintaining the thickness. In addition, it is possible to reduce the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator. .

[0555] In the transistor 200C, the metal oxide 252 is shown as a single layer, but may have a stacked structure of two or more layers. For example, a metal oxide that functions as part of the gate electrode and a gate insulator A metal oxide that functions as a part of the insulating layer may be laminated thereon.

[0556] The transistor 200C includes a metal oxide 252, which serves as a gate voltage. When it functions as a pole, it does not weaken the effect of the electric field from the conductor 260, but The on-state current of the transistor 200C can be improved. In addition, the metal oxide 252 acts as a gate insulator. When the insulator 250 and the metal oxide 252 function as a conductor, the physical thickness of the insulator 250 and the metal oxide 252 The distance between the conductor 260 and the metal oxide 230 can be maintained. The leakage current between the transistor 60 and the metal oxide 230 can be suppressed. The transistor 200C has a laminated structure of an insulator 250 and a metal oxide 252, so that the conductive The physical distance between the conductor 260 and the metal oxide 230 and the distance from the conductor 260 to the metal oxide 230 The electric field strength applied to 30 can be easily adjusted.

[0557] Specifically, the metal oxide 252 may be an oxide semiconductor that can be used for the metal oxide 230. Conductors with low resistance can be used. Or hafnium, aluminum, gallium, etc. tungsten, titanium, tantalum, nickel, gel A metal oxide containing one or more metals selected from the group consisting of arsenic, arsenic, manganese, etc. It can be used.

[0558] In particular, the oxide is an insulator containing oxide of one or both of aluminum and hafnium. Aluminum, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use hafnium aluminate. In particular, hafnium aluminate is preferable because it is more preferable to use hafnium oxide. It has higher heat resistance than niobium. Therefore, it is less likely to crystallize during heat treatment in the later process. It is preferable for this reason. Note that the metal oxide 252 is not an essential component. The design should be appropriate depending on the requirements.

[0559] The insulator 270 has an insulating property that suppresses the permeation of impurities such as water or hydrogen, and oxygen. For example, aluminum oxide or hafnium oxide is preferably used. This prevents the conductor 260 from being oxidized by oxygen from above the insulator 270. In addition, impurities such as water or hydrogen can be prevented from entering the insulator 270 from above. , the conductor 260 and the insulator 250 are interposed between the metal oxide 230 and the metal oxide 230 to suppress the inclusion of the conductor 260 and the insulator 250. It is possible.

[0560] The insulator 271 functions as a hard mask. When processing the conductive material 260, the side of the conductive material 260 is approximately vertical. The angle between the surfaces is between 75 degrees and 100 degrees, preferably between 80 degrees and 95 degrees. can be done.

[0561] The insulator 271 has a function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. By using an insulating material, the insulating layer may also function as a barrier layer. The body 270 may not be provided.

[0562] Using the insulator 271 as a hard mask, the insulator 270, the conductor 260, the metal oxide 2 52, the insulator 250, and a portion of the metal oxide 230c are selectively removed to remove these The side surfaces of the metal oxide 230b can be substantially aligned with each other, and a part of the surface of the metal oxide 230b can be exposed. .

[0563] Also, transistor 200C has region 243a on a portion of the exposed metal oxide 230b surface. and region 243b. Either region 243a or region 243b functions as a source region. The other of the region 243a and the region 243b functions as a drain region.

[0564] The regions 243a and 243b may be formed by, for example, an ion implantation method, an ion doping method, or the like. The exposed metal oxide is then removed using plasma immersion ion implantation or plasma treatment. This can be achieved by introducing impurity elements such as phosphorus or boron into the surface of 230b. In the embodiments, the term "impurity elements" refers to elements other than the main component elements.

[0565] In addition, after exposing a part of the surface of the metal oxide 230b, a metal film is formed and then heat-treated. By carrying out the above, the elements contained in the metal film are diffused into the metal oxide 230b, and the region 2 43a and region 243b may also be formed.

[0566] The region of the metal oxide 230b into which the impurity element is introduced has a reduced electrical resistivity. The regions 243a and 243b may be referred to as "impurity regions" or "low resistance regions." .

[0567] By using the insulator 271 and / or the conductor 260 as a mask, the region 243a and the region The region 243b can be formed in a self-aligned manner. 243a and / or region 243b do not overlap with the conductor 260, reducing parasitic capacitance. ...

Claims

1. The present invention includes a subject detection unit having an imaging device, a feature extraction unit, an estimation unit, and an information presentation unit having a display device, the subject detection unit has a function of acquiring information on a part or all of a user's face, the feature extraction unit has a function of extracting facial features of the user from information on a part or all of the user's face acquired by the subject detection unit; the estimation unit has a function of estimating information about the user from the facial features of the user extracted by the feature extraction unit, The information presentation unit is an electronic device having a function of presenting information to the user based on information about the user estimated by the estimation unit.

2. The present invention includes a subject detection unit having an imaging device, a feature extraction unit, an estimation unit, an information generation unit, and an information presentation unit having a display device, the subject detection unit has a function of acquiring information on a part or all of a user's face, the feature extraction unit has a function of extracting facial features of the user from information on a part or all of the user's face acquired by the subject detection unit; the estimation unit has a function of estimating information about the user from the facial features of the user extracted by the feature extraction unit, The information generation unit has a function of generating or determining information to be presented to the user based on information about the user estimated by the estimation unit, The information presentation unit is an electronic device having a function of presenting information to the user based on the information to be presented to the user determined by the information generation unit.

3. In claim 1 or 2, The display device has a first layer and a second layer, the first layer includes a gate driver circuit and a source driver circuit; the second layer has a pixel array in which pixels are arranged in a matrix; the gate driver circuit and the source driver circuit each have an area overlapping with the pixel; The electronic device, wherein the gate driver circuit has an area overlapping with the source driver circuit.

Images