Functional panel

Abstract

To provide a novel functional panel with excellent convenience, usefulness, or reliability.SOLUTION: A functional panel has a first element, a first reflection film, and an insulating film. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material. The layer containing the light-emitting material includes a region held between the first electrode and the second electrode. The first electrode has a light-transmitting property. The first electrode has a first thickness. The first reflection film includes a region holding the first electrode between the first reflection film and the layer containing the light-emitting material. The first reflection film has a second thickness. The insulating film includes a first opening part. The first opening part overlaps with the first electrode. The insulating film has a cross-sectional shape that is a first step shape. The cross-sectional shape that is the first step shape surrounds the first opening part. The cross-sectional shape that is the first step shape includes a first step difference. The first step difference is more than or equal to a thickness obtained by adding the second thickness to the first thickness.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a functional panel, a display device, an input / output device, a data processor, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] One example of a structure for suppressing the occurrence of crosstalk in a light-emitting device is known, which includes an insulating layer, a first lower electrode formed on the insulating layer, a second lower electrode formed on the insulating layer, a structure formed on the insulating layer and positioned between the first lower electrode and the second lower electrode, a first partition formed on the insulating layer and positioned between the structure and the first lower electrode, a second partition formed on the insulating layer and positioned between the structure and the second lower electrode, a first light-emitting unit formed on the first lower electrode, the first partition, the structure, the second partition, and the second lower electrode, an intermediate layer formed on the first light-emitting unit, a second light-emitting unit formed on the intermediate layer, and an upper electrode formed on the second light-emitting unit (Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2014-175165 A Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment of the present invention is to provide a novel functional panel with excellent convenience, usefulness, or reliability. Another object is to provide a novel display device with excellent convenience, usefulness, or reliability. Another object is to provide a novel input / output device with excellent convenience, usefulness, or reliability. Another object is to provide a novel information processing device with excellent convenience, usefulness, or reliability. Another object is to provide a novel functional panel, a new display device, a new input / output device, a new information processing device, or a new semiconductor device.

[0006] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0007] (1) One aspect of the present invention is a functional panel having a first element, a first reflective film, and an insulating film.

[0008] The first element comprises a first electrode, a second electrode and a layer including a light-emitting material, the layer including the light-emitting material comprising a region sandwiched between the first electrode and the second electrode.

[0009] The first electrode is light-transmitting and has a first thickness. The first reflective film has a region where the first electrode is sandwiched between the layer containing a light-emitting material and the first reflective film has a second thickness.

[0010] The insulating film has a first opening, the first opening overlaps the first electrode, the insulating film has a first stepped cross-sectional shape, the first stepped cross-sectional shape surrounds the first opening when viewed from above, and the first stepped cross-sectional shape has a first step, the first step being equal to or greater than the first thickness plus the second thickness.

[0011] This allows a portion where the layer containing the light-emitting material is thin to be formed in the first step surrounding the first opening. Alternatively, it is possible to suppress a current flowing outside the first opening along the spread of the layer containing the light-emitting material. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping with the first opening. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0012] (2) Another embodiment of the present invention is the above-mentioned functional panel, wherein the first stepped cross-sectional shape has a second step and a third step between the first step, the second step being smaller than the third step, and the second step being greater than or equal to 0.5 times and less than or equal to 1.5 times the first thickness.

[0013] This allows the second step to be changed depending on the thickness of the first electrode. Or, the third step can be made constant without being affected by the thickness of the first electrode. Or, the layer containing the light-emitting material can be made thin in the third step surrounding the first opening. Or, the current flowing outside the first opening along the spread of the layer containing the light-emitting material can be suppressed. Or, the light-emitting region can be concentrated in the region overlapping with the first opening. As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0014] (3) Another aspect of the present invention is the functional panel described above, which has a second element.

[0015] The second element comprises a third electrode, a second electrode and a layer including a light-emitting material, the layer including the light-emitting material comprising a region sandwiched between the third electrode and the second electrode.

[0016] The insulating film has a second opening, the second opening overlaps with the third electrode, the insulating film has a second stepped cross-sectional shape, the second stepped cross-sectional shape surrounds the second opening, and the second stepped cross-sectional shape has a slope, the slope being greater than or equal to 60° and less than or equal to 90° with respect to a surface of the third electrode.

[0017] This allows a thin portion to be formed in the region surrounding the first opening and the region surrounding the second opening of the layer containing the light-emitting material. Alternatively, a current flowing between the second electrode and the first electrode can be suppressed through a region overlapping with the insulating film of the layer containing the light-emitting material. Alternatively, a current flowing between the second electrode and the first electrode in a region overlapping with the second opening can be suppressed through a region overlapping with the insulating film of the layer containing the light-emitting material. Alternatively, a current flowing between the second electrode and the third electrode in a region overlapping with the first opening can be suppressed through a region overlapping with the insulating film of the layer containing the light-emitting material. Alternatively, a light-emitting region can be concentrated in a region overlapping with the first opening or a region overlapping with the second opening. Alternatively, an influence of the operation of the first element on the operation of the second element can be suppressed. Alternatively, the occurrence of a crosstalk phenomenon occurring between the first element and the second element can be suppressed. As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0018] (4) Furthermore, one embodiment of the present invention is the functional panel described above, wherein the second stepped cross-sectional shape has a fourth step, and the fourth step is 0.7 to 1.3 times the first step.

[0019] This allows a portion where the thickness of the layer containing the light-emitting material is thin to be formed in the first step surrounding the first opening and the second step surrounding the second opening. A current flowing between the second electrode and the first electrode can be suppressed through a region where the layer containing the light-emitting material overlaps with the insulating film. Alternatively, a current flowing between the second electrode and the first electrode in a region where the layer containing the light-emitting material overlaps with the insulating film can be suppressed through a region where the layer containing the light-emitting material overlaps with the insulating film. Alternatively, a current flowing between the second electrode and the third electrode in a region where the layer containing the light-emitting material overlaps with the insulating film can be suppressed through a region where the layer containing the light-emitting material overlaps with the insulating film. Alternatively, the light-emitting region can be concentrated in a region where the layer containing the light-emitting material overlaps with the first opening or the second opening. As a result, a novel functional panel with excellent convenience, usefulness, or reliability can be provided.

[0020] (5) Another aspect of the present invention is the above functional panel, wherein the third electrode has a fourth thickness, and the second stepped cross-sectional shape has a fifth step and a sixth step between the fourth step.

[0021] The fifth step is 0.5 to 1.5 times the fourth thickness, the fifth step is smaller than the sixth step, and the sixth step is 0.7 to 1.3 times the third step.

[0022] This allows the second step to be changed depending on the thickness of the third electrode. Or, the third step and the sixth step can be made constant without being affected by the thickness of the first electrode and the thickness of the third electrode. Or, a thin portion can be formed in the third step surrounding the first opening and the sixth step surrounding the second opening of the layer containing the light-emitting material. Or, a current flowing between the second electrode and the first electrode can be suppressed through a region overlapping with the insulating film of the layer containing the light-emitting material. Or, a current flowing between the second electrode and the first electrode overlapping with the second opening can be suppressed through a region overlapping with the insulating film of the layer containing the light-emitting material. Or, a current flowing between the second electrode and the third electrode overlapping with the first opening can be suppressed through a region overlapping with the insulating film of the layer containing the light-emitting material. Or, a light-emitting region can be concentrated in a region overlapping with the first opening or a region overlapping with the second opening. As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0023] (6) Another aspect of the present invention is the functional panel described above, wherein the layer containing a light-emitting material includes a first light-emitting unit, a second light-emitting unit, and an intermediate layer.

[0024] The first light-emitting unit has an area sandwiched between the first electrode and the intermediate layer, and the intermediate layer has an area sandwiched between the first light-emitting unit and the second light-emitting unit, the intermediate layer having a higher electrical conductivity than the second light-emitting unit.

[0025] This allows a portion of the intermediate layer with a thin thickness to be formed in the region surrounding the first opening of the layer containing the light-emitting material. Alternatively, it is possible to suppress the current flowing outside the first opening along the extension of the layer containing the light-emitting material. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping with the first opening. As a result, it is possible to provide a novel functional panel with excellent convenience, usefulness, and reliability.

[0026] (7) Another aspect of the present invention is the functional panel described above having a set of pixels.

[0027] The set of pixels includes a first pixel and a second pixel, the first pixel including a first element and a pixel circuit, and the second pixel including a second element, where the first element is electrically connected to the pixel circuit.

[0028] This allows the first element to be driven using a pixel circuit. Alternatively, display can be performed using the first pixel and the second pixel while preventing crosstalk from occurring. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0029] (8) Another aspect of the present invention is the functional panel described above, which has a functional layer.

[0030] The functional layer comprises a pixel circuit, the pixel circuit including a first transistor, and the functional layer comprises a drive circuit, the drive circuit including a second transistor.

[0031] The first transistor includes a semiconductor film, and the second transistor includes a semiconductor film that can be manufactured in a process for forming the semiconductor film.

[0032] This allows the pixel circuits to be formed in the functional layer, thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0033] (9) Moreover, one aspect of the present invention is the functional panel described above, having a region, the region comprising a group of a set of pixels, another group of a set of pixels, a first conductive film, and a second conductive film.

[0034] The group of pixels is arranged in the row direction, includes the above-mentioned set of pixels, and is electrically connected to the first conductive film.

[0035] Another set of pixels is arranged in a column direction intersecting the row direction, the other set of pixels includes the above-mentioned set of pixels, and the other set of pixels is electrically connected to a second conductive film.

[0036] This makes it possible to supply image information to a plurality of pixels, thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0037] (10) Another aspect of the present invention is a display device having a control unit and the above-described functional panel.

[0038] The control unit is supplied with image information and control information, the control unit generates information based on the image information, the control unit generates a control signal based on the control information, and the control unit supplies the information and the control signal.

[0039] The functional panel is supplied with information and control signals, and a set of pixels displays based on the information.

[0040] This makes it possible to display image information using the first element, thereby providing a novel display device that is highly convenient, useful, and reliable.

[0041] (11) Another embodiment of the present invention is an input / output device including an input unit and a display unit.

[0042] The display unit includes the functional panel described above, and the input unit includes a detection area, the input unit detects an object in the vicinity of the detection area, and the detection area includes an area overlapping with the first pixel.

[0043] This makes it possible to detect an object that is close to an area overlapping with the display unit while displaying image information using the display unit. Alternatively, position information can be input using a finger or the like that is brought close to the display unit as a pointer. Alternatively, position information can be associated with image information displayed on the display unit. As a result, it is possible to provide a novel input / output device that is highly convenient, useful, and reliable.

[0044] (12) Another embodiment of the present invention is a data processing device including an arithmetic device and an input / output device.

[0045] The computing device is provided with input information or sensing information, and the computing device generates control information and image information based on the input information or sensing information. The computing device also provides the control information and image information.

[0046] The input / output device supplies input information and detection information, the input / output device is supplied with control information and image information, and the input / output device includes a display unit, an input unit, and a detection unit. The display unit includes the above-mentioned functional panel, and displays the image information based on the control information. The input unit generates the input information, and the detection unit generates the detection information.

[0047] This makes it possible to generate control information based on input information or detection information. Alternatively, it is possible to display image information based on input information or detection information. As a result, it is possible to provide a novel information processing device that is highly convenient, useful, and reliable.

[0048] (13) Another aspect of the present invention is an information processing device including one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye gaze input device, and a posture detection device, and the above-mentioned functional panel.

[0049] This allows the arithmetic unit to generate image information or control information based on information supplied using various input devices, thereby providing a novel information processing device that is highly convenient and reliable.

[0050] In the drawings accompanying this specification, components are classified by function and shown in block diagrams as independent blocks; however, in actuality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0051] In this specification, the names of the source and drain of a transistor are interchanged depending on the polarity of the transistor and the level of the potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In addition, in a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for convenience, the connection relationship of a transistor may be described assuming that the source and drain are fixed, but in reality, the names of the source and drain are interchanged according to the above-mentioned potential relationship.

[0052] In this specification, the source of a transistor means a source region that is a part of a semiconductor film that functions as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Furthermore, the gate means a gate electrode.

[0053] In this specification, a state in which transistors are connected in series means, for example, a state in which only one of the source or drain of a first transistor is connected to only one of the source or drain of a second transistor, and a state in which transistors are connected in parallel means a state in which one of the source or drain of a first transistor is connected to one of the source or drain of a second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor.

[0054] In this specification, the term "connection" refers to an electrical connection, and corresponds to a state in which a current, voltage, or potential can be supplied or transmitted. Therefore, the state of being connected does not necessarily refer to a state of being directly connected, but also includes a state of being indirectly connected via a circuit element such as a wiring, resistor, diode, or transistor so that a current, voltage, or potential can be supplied or transmitted.

[0055] In this specification, even if components that are independent on a circuit diagram are connected to each other, in reality, one conductive film may have the functions of multiple components, for example, when part of a wiring functions as an electrode. In this specification, the term "connection" also includes such cases in which one conductive film has the functions of multiple components.

[0056] In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode. Effect of the Invention

[0057] According to one embodiment of the present invention, a novel functional panel with excellent convenience, usefulness, or reliability can be provided. Or, a novel display device with excellent convenience, usefulness, or reliability can be provided. Or, a novel input / output device with excellent convenience, usefulness, or reliability can be provided. Or, a novel information processing device with excellent convenience, usefulness, or reliability can be provided. Or, a novel functional panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

[0058] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract effects other than these from the description in the specification, drawings, claims, etc. [Brief description of the drawings]

[0059] [Figure 1] 1A to 1D are diagrams illustrating a configuration of a functional panel according to an embodiment. [Diagram 2] 2A to 2D are diagrams illustrating the configuration of a functional panel according to an embodiment. [Diagram 3]FIG. 3 is a diagram illustrating a configuration of a functional panel according to an embodiment. [Figure 4] 4A and 4B are diagrams illustrating a configuration of a functional panel according to an embodiment. [Diagram 5] 5A to 5C are diagrams illustrating the configuration of a functional panel according to an embodiment. [Figure 6] FIG. 6 is a circuit diagram illustrating a configuration of the functional panel according to the embodiment. [Figure 7] FIG. 7 is a circuit diagram illustrating a configuration of the functional panel according to the embodiment. [Figure 8] 8A and 8B are circuit diagrams illustrating the configuration of a functional panel according to an embodiment. [Figure 9] FIG. 9 is a cross-sectional view illustrating a configuration of a functional panel according to an embodiment. [Figure 10] 10A and 10B are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 11] 11A and 11B are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 12] 12A and 12B are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 13] 13A to 13C are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 14] 14A and 14B are diagrams illustrating a configuration of a functional panel according to an embodiment. [Figure 15] FIG. 15 is a diagram illustrating the operation of the functional panel according to the embodiment. [Figure 16] 16A to 16D are diagrams illustrating a configuration of a display device according to an embodiment. [Figure 17] FIG. 17 is a block diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 18] 18A to 18C are block diagrams and projection diagrams illustrating the configuration of an information processing device according to an embodiment. [Figure 19] 19A and 19B are flowcharts illustrating a method for driving an information processing device according to an embodiment. [Figure 20] 20A to 20C are diagrams illustrating a method of driving an information processing device according to an embodiment. [Figure 21] 21A to 21C are diagrams illustrating a method of driving an information processing device according to an embodiment. [Figure 22] 22A to 22D are diagrams illustrating a method of driving the information processing device according to the embodiment. [Figure 23] 23A to 23E are diagrams illustrating a configuration of an information processing device according to an embodiment. [Figure 24] 24A to 24E are diagrams illustrating a configuration of an information processing device according to an embodiment. [Diagram 25] 25A and 25B are diagrams illustrating a configuration of an information processing device according to an embodiment. [Figure 26] 26A is a top view of a semiconductor device according to one embodiment of the present invention, and FIGS. 26B to 26D are cross-sectional views of the semiconductor device according to one embodiment of the present invention. [Figure 27] 27A and 27B are transmission electron microscope photographs illustrating a cross section of a functional panel according to an embodiment. [Figure 28] 28A to 28C are diagrams for explaining the configuration and characteristics of a functional panel according to an embodiment. [Figure 29] 29A and 29B are diagrams illustrating the configuration of a functional panel according to an embodiment. [Diagram 30] FIG. 30A is a diagram for explaining a method for producing a functional panel according to an embodiment, and FIG. 30B is a diagram for explaining characteristics of a colored film of the functional panel according to an embodiment. [Diagram 31] 31A to 31F are diagrams for explaining the characteristics of the functional panel according to the embodiment. [Diagram 32] 32A to 32F are diagrams for explaining characteristics of the functional panel according to the embodiment. [Diagram 33]33A and 33B are photographs of a functional panel according to an embodiment, and FIG. 33C is a diagram illustrating the characteristics of the functional panel according to an embodiment. [Diagram 34] FIG. 34 is a diagram illustrating the configuration of a light emitting element according to an embodiment. [Diagram 35] FIG. 35 is a diagram illustrating the voltage-luminance characteristics of the light-emitting element according to the example. [Diagram 36] FIG. 36 is a diagram illustrating an emission spectrum when the light emitting device according to the example is caused to emit light at a luminance of 1000 cd / m2. [Figure 37] FIG. 37 is a diagram illustrating the voltage-luminance characteristics of the comparative light-emitting element according to the example. [Figure 38] FIG. 38 is a diagram illustrating an emission spectrum when the comparative light-emitting element according to the example is caused to emit light at a luminance of 1000 cd / m2. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0060] A functional panel according to one embodiment of the present invention includes a first element, a first reflective film, and an insulating film. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material, the layer containing the light-emitting material includes a region sandwiched between the first electrode and the second electrode, the first electrode is light-transmitting, the first electrode has a first thickness, the first reflective film includes a region sandwiching the first electrode between the layer containing the light-emitting material, and the first reflective film has a second thickness. The insulating film includes a first opening, the first opening overlaps the first electrode, the insulating film includes a first stepped cross-sectional shape, the first stepped cross-sectional shape includes a first step, and the first step is equal to or greater than the first thickness plus the second thickness.

[0061] This makes it possible to form a thin portion in the region surrounding the first opening 528h(1) of the layer 553 containing a light-emitting material. Alternatively, it is possible to suppress the current flowing outside the first opening 528h(1) along the spread of the layer 553 containing a light-emitting material. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping with the first opening 528h(1). As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0062] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention is not interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated explanations are omitted.

[0063] (Embodiment 1) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to drawings.

[0064] Fig. 1A is a perspective view of a functional panel according to an embodiment of the present invention, and Fig. 1B is a cross-sectional view taken along a cutting plane YZ in Fig. 1A, and Fig. 1C and Fig. 1D are diagrams for explaining a part of Fig. 1B.

[0065] Fig. 2A is a perspective view of a functional panel according to an embodiment of the present invention, and Fig. 2B is a cross-sectional view taken along a cutting plane YZ in Fig. 2A, and Fig. 2C and Fig. 2D are diagrams for explaining a part of Fig. 2B.

[0066] FIG. 3 is a diagram illustrating a part of FIG. 1C.

[0067] In this specification, variables whose values ​​are integers of 1 or more may be used in codes. For example, (p) including a variable p whose value is an integer of 1 or more may be used as part of a code that specifies any one of up to p components. Also, for example, (m, n) including variables m and n whose values ​​are integers of 1 or more may be used as part of a code that specifies any one of up to m×n components.

[0068] <Configuration example 1 of function panel 700> The functional panel described in this embodiment has an element 550G(i,j), a reflective film 554G(i,j), and an insulating film 528 (see FIG. 1C).

[0069] 《Example of the configuration of element 550G(i,j)》 Element 550G(i,j) includes an electrode 551G(i,j), an electrode 552, and a layer 553 including a light-emitting material.

[0070] The layer 553 containing a light-emitting material has a region sandwiched between the electrode 551G(i,j) and the electrode 552.

[0071] The electrode 551G(i,j) is transparent and has a thickness T1. The distance between the layer 553 containing a light-emitting material and the reflective film 554G(i,j) can be adjusted by controlling the thickness T1. This allows a microresonator structure to be formed in the functional panel 700. Alternatively, light of a specific wavelength can be efficiently extracted from the element 550G(i,j).

[0072] <<Example of the configuration of reflective film 554G(i,j)>> The reflective film 554G(i,j) has a region where the electrode 551G(i,j) is sandwiched between the layer 553 containing a light-emitting material and the reflective film 554G(i,j) has a thickness T2. For example, a conductive material can be used for the reflective film 554G(i,j). Specifically, a wiring or the like can be used for the reflective film 554G(i,j).

[0073] Configuration Example 1 of Insulating Film 528 The insulating film 528 has a thickness T3, which is equal to or greater than the sum of the thicknesses T1 and T2. The insulating film 528 also has an opening 528h(1) (see FIGS. 1A to 1C).

[0074] The opening 528h(1) overlaps with the electrode 551G(i,j), and the insulating film 528 has a stepped cross-sectional shape SCT1 (see FIGS. 1C and 1D).

[0075] A stepped cross-sectional shape SCT1 surrounds the opening 528h(1), and the stepped cross-sectional shape SCT1 has a slope θ (see FIGS. 1A and 1B).

[0076] The inclination θ is 60° or more and 90° or less with respect to the surface of the electrode 551G(i,j) (see FIG. 1C). Specifically, the inclination θ is the angle of the electrode 551G(i,j) with respect to the surface where the electrode 551G(i,j) is in contact with the layer 553 containing a light-emitting material. Alternatively, the inclination θ is the angle of the side surface with respect to the bottom surface of the insulating film 528. Note that the thickness of the layer 553 containing a light-emitting material is thinner in a region in contact with the side surface having the inclination θ of the insulating film 528 than in a region in contact with the electrode 551G(i,j).

[0077] This makes it possible to form a thin portion in the region surrounding the opening 528h(1) of the layer 553 containing a light-emitting material. Alternatively, it is possible to suppress the current flowing outside the opening 528h(1) along the spread of the layer 553 containing a light-emitting material. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping with the opening 528h(1). As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0078] Configuration Example 2 of Insulating Film 528 The stepped cross-sectional shape SCT1 also has a step 528D(1) (see FIG. 1C and FIG. 1D). The step 528D(1) is equal to or greater than the sum of thickness T1 and thickness T2. For example, the step 528D(1) can be formed in the insulating film 528 by a method of forming an insulating film 528 on a processed member on which a reflective film 554G(i,j) having a thickness T2 and an electrode 551G(i,j) having a thickness T1 are laminated. This allows the step 528D(1) to be formed to a thickness equivalent to the sum of thickness T1 and thickness T2. Also, for example, the insulating film 528 can be formed on a processed member on which an insulating film 522G, a reflective film 554G(i,j) having a thickness T2 and an electrode 551G(i,j) having a thickness T1 are laminated. This allows an even larger step to be formed.

[0079] This makes it possible to form a thin portion of layer 553 containing a light-emitting material in step 528D(1) surrounding opening 528h(1). Alternatively, it is possible to suppress current flowing outside opening 528h(1) along the spread of layer 553 containing a light-emitting material. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping opening 528h(1). As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0080] <Configuration Example 3 of the insulating film 528> Furthermore, the stepped cross-sectional shape SCT1 includes a step 528D(2) and a step 528D(3) between the steps 528D(1) (see FIGS. 2C and 2D).

[0081] The step 528D(2) is smaller than the step 528D(3), and the step 528D(2) is 0.5 to 1.5 times the thickness T1. For example, the step 528D(2) has a step that is approximately the same as the thickness T1. Furthermore, the step 528D(3) is not affected by the thickness T1 of the electrode 551G(i,j).

[0082] This allows the step 528D(2) to be changed according to the thickness T1 of the electrode 551G(i,j). Alternatively, the step 528D(3) can be made constant without being affected by the thickness T1 of the electrode 551G(i,j). Alternatively, the layer 553 containing a light-emitting material can be made thin in the step 528D(3) surrounding the opening 528h(1). Alternatively, the current flowing outside the opening 528h(1) along the spread of the layer 553 containing a light-emitting material can be suppressed. Alternatively, the light-emitting region can be concentrated in the region overlapping with the opening 528h(1). As a result, a novel functional panel excellent in convenience, usefulness, and reliability can be provided.

[0083] <Configuration example 2 of function panel 700> The functional panel described in this embodiment has element 550B(i,j) (see FIGS. 1A, 1C, 2A, and 2C).

[0084] 《Example of the configuration of element 550G(i,j)》 Element 550B(i,j) includes an electrode 551B(i,j), an electrode 552, and a layer 553 including a light-emissive material (see FIGS. 1C and 2C).

[0085] The layer 553 containing the light-emitting material has a region sandwiched between the electrode 551B(i,j) and the electrode 552 .

[0086] Configuration Example 4 of the Insulating Film 528 The insulating film 528 has an opening 528h(2) (see FIGS. 1A, 1B, 2A, and 2B). The opening 528h(2) overlaps with the electrode 551B(i,j), and the insulating film 528 has a stepped cross-sectional shape SCT2.

[0087] The stepped cross-sectional shape SCT2 surrounds the opening 528h(2), and the stepped cross-sectional shape SCT2 has a slope θ (see FIGS. 1C and 2C).

[0088] The inclination θ is between 60° and 90° with respect to the surface of electrode 551B(i,j).

[0089] This allows the layer 553 containing a light-emitting material to have thin portions in the region surrounding the opening 528h(1) and the region surrounding the opening 528h(2). Alternatively, the current flowing between the electrode 552 and the electrode 551G(i,j) in the region overlapping with the opening 528h(2) can be suppressed through the region of the layer 553 containing a light-emitting material that overlaps with the insulating film 528. Alternatively, the current flowing between the electrode 552 and the electrode 551B(i,j) in the region overlapping with the opening 528h(1) can be suppressed through the region of the layer 553 containing a light-emitting material that overlaps with the insulating film 528. Alternatively, the light-emitting region can be concentrated in the region overlapping with the opening 528h(1) or the region overlapping with the opening 528h(2). Alternatively, the influence of the operation of the element 550G(i,j) on the operation of the element 550B(i,j) can be suppressed. Alternatively, the occurrence of crosstalk between element 550G(i,j) and element 550B(i,j) can be suppressed. As a result, a novel functional panel that is excellent in convenience, usefulness, and reliability can be provided.

[0090] <Configuration Example 5 of the insulating film 528> The stepped cross-sectional shape SCT2 has a step 528D(4), and the step 528D(4) is 0.7 to 1.3 times, preferably 0.9 to 1.1 times, of the step 528D(1) (see FIGS. 1D and 2D). For example, the insulating film 528 can be formed on a processed member in which the insulating film 522B, the reflective film 554B(i,j) having a thickness T2, and the electrode 551B(i,j) having a thickness T4 are laminated. This allows the step 528D(4) to be approximately the same as the step 528D(1). Alternatively, the thickness of the insulating film 522B can be adjusted so that the step 528D(4) is approximately the same as the step 528D(1).

[0091] This allows the layer 553 containing a light-emitting material to have a thin portion in the step 528D(1) surrounding the opening 528h(1) and the step 528D(4) surrounding the opening 528h(2). Alternatively, the current flowing between the electrode 552 and the electrode 551G(i,j) in the region overlapping the opening 528h(2) can be suppressed through the region of the layer 553 containing a light-emitting material overlapping the insulating film 528. Alternatively, the current flowing between the electrode 552 and the electrode 551B(i,j) in the region overlapping the opening 528h(1) can be suppressed through the region of the layer 553 containing a light-emitting material overlapping the insulating film 528. Alternatively, the light-emitting region can be concentrated in the region overlapping the opening 528h(1) or the region overlapping the opening 528h(2). As a result, a novel functional panel with excellent convenience, usefulness, or reliability can be provided.

[0092] Configuration Example 6 of the insulating film 528 Electrode 551B(i,j) has a thickness T4 (see FIG. 2C).

[0093] Furthermore, the stepped cross-sectional shape SCT2 includes a step 528D(5) and a step 528D(6) between the steps 528D(4) (see FIGS. 2C and 2D).

[0094] The step 528D(5) is 0.5 to 1.5 times the thickness T4, and the step 528D(5) is smaller than the step 528D(6). The step 528D(6) is 0.7 to 1.3 times, preferably 0.9 to 1.1 times, the step 528D(3). For example, the step 528D(5) has a step that is approximately the same as the thickness T4. The step 528D(6) is not affected by the thickness T4 of the electrode 551B(i,j).

[0095] This allows the step 528D(5) to be changed according to the thickness T4 of the electrode 551B(i,j). Alternatively, the step 528D(3) and the step 528D(6) can be made constant without being affected by the thickness T1 of the electrode 551G(i,j) and the thickness T4 of the electrode 551B(i,j). Alternatively, a thin portion can be formed in the step 528D(3) surrounding the opening 528h(1) and the step 528D(6) surrounding the opening 528h(2) of the layer 553 containing a light-emitting material. Alternatively, the current flowing between the electrode 552 overlapping the opening 528h(2) and the electrode 551G(i,j) can be suppressed through a region of the layer 553 containing a light-emitting material overlapping the insulating film 528. Alternatively, it is possible to suppress a current flowing between electrode 552 and electrode 551B(i,j) overlapping opening 528h(1) via a region of layer 553 containing a light-emitting material that overlaps insulating film 528. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping opening 528h(1) or the region overlapping opening 528h(2). As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0096] <Configuration example of layer 553 containing a light-emitting material> Layer 553 containing a light-emitting material includes light-emitting unit 103(1), light-emitting unit 103(2), and intermediate layer 106 (see FIG. 3).

[0097] The light-emitting unit 103(1) is sandwiched between the electrode 551G(i,j) and the intermediate layer 106. The light-emitting unit has one region where electrons injected from one side recombine with holes injected from the other side. The light-emitting unit also includes a light-emitting material, which emits energy generated by the recombination of electrons and holes as light. For example, a configuration that emits blue light can be used for the light-emitting unit 103(1), and a configuration that emits yellow light can be used for the light-emitting unit 103(2). This allows the layer 553 containing the light-emitting material to be configured to emit white light.

[0098] Intermediate layer 106 has a region sandwiched between light-emitting unit 103(1) and light-emitting unit 103(2), and intermediate layer 106 has a higher conductivity than light-emitting unit 103(2). Intermediate layer has a region sandwiched between the two light-emitting units. Intermediate layer has a charge generating region, and has a function of supplying holes to the light-emitting unit arranged on the cathode side and supplying electrons to the light-emitting unit arranged on the anode side. A configuration having multiple light-emitting units and intermediate layers is sometimes called a tandem-type light-emitting element.

[0099] This makes it possible to form a thin portion 106N of the intermediate layer 106 in the region surrounding the opening 528h(1) of the layer 553 containing a light-emitting material. Alternatively, it is possible to suppress the current flowing outside the opening 528h(1) along the spread of the layer 553 containing a light-emitting material. Alternatively, it is possible to concentrate the light-emitting region in the region overlapping with the opening 528h(1). As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0100] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0101] (Embodiment 2) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to drawings.

[0102] FIG. 4A is a top view illustrating a configuration of a functional panel according to one embodiment of the present invention, and FIG. 4B is a diagram illustrating a part of FIG. 4A.

[0103] 5A is a diagram illustrating a part of FIG. 4A, FIG. 5B is a diagram illustrating a part of FIG. 5A, and FIG. 5C is a diagram illustrating another part of FIG. 5A.

[0104] FIG. 6 is a circuit diagram illustrating a configuration of a pixel circuit that can be used in a functional panel of one embodiment of the present invention.

[0105] FIG. 7 is a circuit diagram illustrating a configuration of a pixel circuit that can be used in a functional panel of one embodiment of the present invention.

[0106] FIG. 8A is a circuit diagram illustrating a part of an amplifier circuit that can be used in a functional panel of one embodiment of the present invention, and FIG. 8B is a circuit diagram of a sampling circuit that can be used in a functional panel of one embodiment of the present invention.

[0107] <Configuration example 1 of function panel 700> Functional panel 700 has a set of pixels 703(i,j) (see FIG. 4A).

[0108] The functional panel 700 also has a conductive film G1(i), a conductive film G2(i), a conductive film S1g(j), a conductive film S2g(j), a conductive film ANO, a conductive film VCOM2, and a conductive film V0 (see FIG. 6).

[0109] For example, the conductive film G1(i) is supplied with a first selection signal, the conductive film G2(i) is supplied with a second selection signal, the conductive film S1g(j) is supplied with an image signal, and the conductive film S2g(j) is supplied with a control signal.

[0110] <<Configuration example 1 of pixel 703(i,j)>> The set of pixels 703(i,j) comprises pixel 702G(i,j) (see FIG. 4B). Pixel 702G(i,j) comprises pixel circuit 530G(i,j) and element 550G(i,j) (see FIG. 5A).

[0111] Configuration example 1 of pixel circuit 530G(i,j) The pixel circuit 530G(i,j) is supplied with a first selection signal, and acquires an image signal based on the first selection signal.

[0112] For example, the conductive film G1(i) can be used to supply a first selection signal (see FIG. 5B). Alternatively, the conductive film S1g(j) can be used to supply an image signal. Note that the operation of supplying the first selection signal and causing the pixel circuit 530G(i,j) to acquire the image signal can be referred to as "writing" (see FIG. 15).

[0113] Configuration example 2 of pixel circuit 530G(i,j) The pixel circuit 530G(i,j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21, and a node N21 (see FIG. 6). The pixel circuit 530G(i,j) also includes a node N22, a capacitor C22, and a switch SW23.

[0114] The transistor M21 includes a gate electrode electrically connected to the node N21, a first electrode electrically connected to the element 550G(i,j), and a second electrode electrically connected to the conductive film ANO.

[0115] The switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g(j), and a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film G1(i).

[0116] The switch SW22 has a first terminal electrically connected to the conductive film S2g(j) and has a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film G2(i).

[0117] The capacitor C21 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second electrode of the switch SW22.

[0118] This allows an image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of light emitted by element 550G(i,j) can be controlled using the potential of node N21. As a result, a novel functional panel with excellent convenience and reliability can be provided.

[0119] Configuration example 1 of element 550G(i,j) The element 550G(i,j) is electrically connected to the pixel circuit 530G(i,j) (see FIG. 5A). The element 550G(i,j) also includes an electrode 551G(i,j) electrically connected to the pixel circuit 530G(i,j) and an electrode 552 electrically connected to the conductive film VCOM2 (see FIGS. 6 and 10A). The element 550G(i,j) has a function of operating based on the potential of the node N21.

[0120] For example, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, a QDLED (Quantum Dot LED), or the like can be used for element 550G(i,j).

[0121] <Configuration example 2 of function panel 700> The functional panel described in this embodiment has a conductive film RS(i), a conductive film TX(i), a conductive film SE(i), a conductive film VR, a conductive film VCP, a conductive film VPI, and a conductive film WX(j) (see FIG. 7).

[0122] For example, the conductive film RS(i) is supplied with a third selection signal, the conductive film TX(i) is supplied with a fourth selection signal, and the conductive film SE(i) is supplied with a fifth selection signal.

[0123] Configuration example 2 of pixel 703(i,j) Pixel 703(i,j) comprises pixel 702S(i,j) (see FIG. 4B). Pixel 702S(i,j) comprises pixel circuit 530S(i,j) and element 550S(i,j) (see FIG. 5A).

[0124] Configuration Example 1 of Pixel Circuit 530S(i,j) The pixel circuit 530S(i,j) includes a switch SW31, a switch SW32, a switch SW33, a transistor M31, a capacitor C31, and a node FD (see FIG. 7).

[0125] The switch SW31 has a first terminal electrically connected to the element 550S(i,j), a second terminal electrically connected to the node FD, and a function of controlling the conductive state or non-conductive state based on the potential of the conductive film TX(i).

[0126] The switch SW32 has a first terminal electrically connected to the node FD, a second terminal electrically connected to the conductive film VR, and a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film RS(i).

[0127] The capacitor C31 includes a conductive film electrically connected to the node FD and a conductive film electrically connected to the conductive film VCP.

[0128] The transistor M31 includes a gate electrode electrically connected to the node FD, and a first electrode electrically connected to the conductive film VPI.

[0129] The switch SW33 has a first terminal electrically connected to the second electrode of the transistor M31, a second terminal electrically connected to the conductive film WX(j), and a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film SE(i).

[0130] As a result, the imaging signal generated by the element 550S(i,j) can be transferred to the node FD using the switch SW31. Alternatively, the imaging signal generated by the element 550S(i,j) can be stored in the node FD using the switch SW31. Alternatively, the pixel circuit 530S(i,j) and the element 550S(i,j) can be brought into a non-conductive state using the switch SW31. Alternatively, a correlated double sampling method can be applied. Alternatively, noise contained in the imaging signal can be reduced. As a result, a novel functional panel with excellent convenience or reliability can be provided.

[0131] <<Configuration Example 1 of Element 550S(i,j)>> The element 550S(i,j) is electrically connected to the pixel circuit 530S(i,j) (see FIG. 5A). The element 550S(i,j) has a function of generating an image signal. For example, a heterojunction type photoelectric conversion element, a bulk heterojunction type photoelectric conversion element, or the like can be used for the element 550S(i,j).

[0132] <<Configuration Example 3 of Pixel 703(i,j)>> A plurality of pixels can be used for pixel 703(i,j). For example, a plurality of pixels that display colors with different hues can be used. Each of the plurality of pixels can be referred to as a sub-pixel. Alternatively, a set of a plurality of sub-pixels can be referred to as a pixel.

[0133] This allows the colors displayed by the multiple pixels to be mixed additively or subtractively, or allows colors of hues that cannot be displayed by individual pixels to be displayed.

[0134] Specifically, pixel 702B(i,j) displaying blue, pixel 702G(i,j) displaying green, and pixel 702R(i,j) displaying red can be used for pixel 703(i,j). Each of pixel 702B(i,j), pixel 702G(i,j), and pixel 702R(i,j) can be referred to as a sub-pixel (see FIG. 4B).

[0135] Also, for example, a pixel displaying white or the like can be used as pixel 703(i,j) in addition to the above set. Also, a pixel displaying cyan, a pixel displaying magenta, and a pixel displaying yellow can be used as pixel 703(i,j).

[0136] Also, for example, a pixel that emits infrared light can be added to the above set and used as pixel 703(i,j). Specifically, a pixel that emits light including light having a wavelength of 650 nm or more and 1000 nm or less can be used as pixel 703(i,j).

[0137] <Configuration example 3 of function panel 700> The functional panel described in this embodiment has a driving circuit GD, a driving circuit SD, and a driving circuit RD (see FIG. 4A).

[0138] <<Example of the configuration of the driving circuit GD>> The driving circuit GD has a function of supplying a first selection signal and a second selection signal. For example, the driving circuit GD is electrically connected to the conductive film G1(i) and supplies a first selection signal, and is electrically connected to the conductive film G2(i) and supplies a second selection signal.

[0139] <<Example of the configuration of the drive circuit SD>> The drive circuit SD has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level. For example, the drive circuit SD is electrically connected to the conductive film S1g(j) and supplies an image signal, and is electrically connected to the conductive film S2g(j) and supplies a control signal.

[0140] <<Configuration example of the driver circuit RD>> The driver circuit RD has a function of supplying a third selection signal to a fifth selection signal. For example, the driver circuit RD is electrically connected to the conductive film RS(i) and supplies a third selection signal, electrically connected to the conductive film TX(i) and supplies a fourth selection signal, and electrically connected to the conductive film SE(i) and supplies a fifth selection signal.

[0141] <Configuration example 4 of function panel 700> The functional panel described in this embodiment has a conductive film VLEN, a conductive film VIV, and a read circuit RC (see FIG. 8A, FIG. 8B, and FIG. 4A). The read circuit RC includes a read circuit RC(j). The functional panel also has a conductive film CDSVDD, a conductive film CDSVSS, a conductive film CDSBIAS, a conductive film CAPSEL, and a conductive film VCL.

[0142] 《Example of the configuration of readout circuit RC(j)》 The read circuit RC(j) includes an amplifier circuit and a sampling circuit SC(j) (see FIGS. 8A and 8B).

[0143] <<Example of amplifier circuit configuration>> The amplifier circuit includes a transistor M32(j) (see FIG. 8A). The transistor M32(j) has a gate electrode electrically connected to the conductive film VLEN, a first electrode electrically connected to the conductive film WX(j), and a second electrode electrically connected to the conductive film VIV.

[0144] When the switch SW33 is in a conductive state, the conductive film WX(j) connects the transistor M31 and the transistor M32 (see FIGS. 7 and 8A). This allows the transistor M31 and the transistor M32 to configure a source follower circuit. Alternatively, the potential of the conductive film WX(j) can be changed based on the potential of the node FD.

[0145] Example of the configuration of sampling circuit SC(j) The sampling circuit SC(j) includes a first terminal IN(j), a second terminal, and a third terminal OUT(j) (see FIG. 8B), and also includes a node NS.

[0146] The first terminal IN(j) is electrically connected to the conductive film WX(j), the second terminal is electrically connected to the conductive film CL, and the third terminal OUT(j) has the function of supplying a signal that changes based on the potential of the first terminal IN(j).

[0147] This makes it possible to obtain an imaging signal from the pixel circuit 530S(i,j). Or, for example, a correlated double sampling method can be applied. A differential signal of the pixel circuit 530S(i,j) can be obtained for each conductive film WX(j). Or, noise can be reduced. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0148] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0149] (Embodiment 3) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to drawings.

[0150] FIG. 9 is a diagram for explaining the configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view taken along lines X1-X2, X3-X4, X9-X10, and X11-X12 in FIG. 4A and a pair of pixels 703(i,j).

[0151] Fig. 10A is a diagram illustrating a configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view of the pixel 702G(i,j) illustrated in Fig. 4B. Fig. 10B is a cross-sectional view illustrating a part of Fig. 10A.

[0152] Fig. 11A is a diagram illustrating a configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view of the pixel 702S(i,j) illustrated in Fig. 4B. Fig. 11B is a cross-sectional view illustrating a part of Fig. 11A.

[0153] Fig. 12A is a diagram for explaining the configuration of a functional panel according to an embodiment of the present invention, and is a cross-sectional view taken along lines X1-X2 and X3-X4 in Fig. 4A. Fig. 12B is a diagram for explaining a part of Fig. 12A.

[0154] <Configuration example 1 of function panel 700> The functional panel described in this embodiment has a functional layer 520 (see FIG. 9).

[0155] <Configuration example 1 of functional layer 520> The functional layer 520 includes a pixel circuit 530G(i,j) (see FIG. 9). The functional layer 520 includes, for example, a transistor M21 used in the pixel circuit 530G(i,j) (see FIGS. 4 and 10A).

[0156] The functional layer 520 includes an opening 591G. The pixel circuit 530G(i,j) is electrically connected to the element 550G(i,j) in the opening 591G (see FIGS. 9 and 10A).

[0157] <<Configuration Example 2 of Functional Layer 520>> The functional layer 520 includes a pixel circuit 530S(i,j) (see FIG. 9). The functional layer 520 includes, for example, a transistor used for the switch SW31 of the pixel circuit 530S(i,j) (see FIGS. 9 and 11A).

[0158] The functional layer 520 includes an opening 591S, and the pixel circuit 530S(i,j) is electrically connected to the element 550S(i,j) at the opening 591S (see FIGS. 9 and 11A).

[0159] This makes it possible to form pixel circuits 530G(i,j) in the functional layer 520. Or, it makes it possible to form pixel circuits 530S(i,j) in the functional layer 520. For example, it makes it possible to form a semiconductor film used in pixel circuit 530S(i,j) in the process of forming a semiconductor film used in pixel circuit 530G(i,j). Or, it makes it possible to simplify the manufacturing process. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0160] <Configuration example 3 of functional layer 520> The functional layer 520 includes a driving circuit GD (see FIGS. 4A and 9). The functional layer 520 includes, for example, a transistor MD used in the driving circuit GD (see FIGS. 9 and 12A).

[0161] The functional layer 520 comprises a driving circuit RD and a readout circuit RC (see FIG. 9).

[0162] As a result, for example, in the process of forming the semiconductor film used in the pixel circuit 530G(i,j), the semiconductor film used in the drive circuit GD can be formed. Or, for example, in the process of forming the semiconductor film used in the pixel circuit 530G(i,j), the semiconductor films used in the drive circuit RD and the readout circuit RC can be formed. Or, the manufacturing process of the functional panel can be simplified. As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0163] <<Example of transistor configuration>> A bottom-gate transistor or a top-gate transistor can be used for the functional layer 520. Specifically, the transistor can be used as a switch.

[0164] The transistor includes a semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B (see FIG. 10B).

[0165] The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

[0166] The conductive film 504 has a region overlapping with the region 508C, and has a function of a gate electrode.

[0167] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0168] The conductive film 512A has either a function of a source electrode or a function of a drain electrode, and the conductive film 512B has the other function of a source electrode or a function of a drain electrode.

[0169] The conductive film 524 can be used for a transistor. The conductive film 524 has a region where the semiconductor film 508 is sandwiched between the conductive film 524 and the conductive film 504. The conductive film 524 functions as a second gate electrode.

[0170] Note that a semiconductor film to be used for a transistor in a driver circuit can be formed in a process of forming a semiconductor film to be used for a transistor in a pixel circuit. For example, a semiconductor film having the same composition as that of the semiconductor film to be used for a transistor in a pixel circuit can be used for the driver circuit.

[0171] Configuration example 1 of semiconductor film 508 For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0172] [Hydrogenated amorphous silicon] For example, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a functional panel with less display unevenness than, for example, a functional panel using polysilicon for the semiconductor film 508. Alternatively, it is easy to increase the size of the functional panel.

[0173] [Polysilicon] For example, polysilicon can be used for the semiconductor film 508. This allows the field effect mobility of the transistor to be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the driving capability can be improved than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the aperture ratio of a pixel can be improved than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508.

[0174] Alternatively, for example, the reliability of the transistor can be improved as compared to a transistor in which hydrogenated amorphous silicon is used for the semiconductor film 508 .

[0175] Alternatively, the temperature required to manufacture the transistor can be made lower than that of a transistor using single crystal silicon, for example.

[0176] Alternatively, a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit. Alternatively, the driver circuit can be formed over the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components included in an electronic device can be reduced.

[0177] [Single crystal silicon] For example, single crystal silicon can be used for the semiconductor film 508. This allows for higher definition than, for example, a functional panel using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, a functional panel with less display unevenness can be provided than, for example, a functional panel using polysilicon for the semiconductor film 508. Alternatively, for example, smart glasses or a head mounted display can be provided.

[0178] Configuration example 2 of semiconductor film 508 For example, metal oxide can be used for the semiconductor film 508. This allows the pixel circuit to hold an image signal for a longer period of time compared to a pixel circuit using a transistor with amorphous silicon used for the semiconductor film. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, while suppressing the occurrence of flicker. As a result, the fatigue accumulated by the user of the information processing device can be reduced. Also, the power consumption associated with driving can be reduced.

[0179] In addition, the pixel circuit can hold an image signal for a longer period of time than a pixel circuit using a transistor with an amorphous silicon semiconductor film. Specifically, the second selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute. As a result, shooting can be performed using a global shutter method. In addition, a moving subject can be shot with reduced distortion.

[0180] For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor including indium, an oxide semiconductor including indium, gallium, and zinc, or an oxide semiconductor including indium, gallium, zinc, and tin can be used. can be used for the semiconductor film.

[0181] For example, a transistor having a smaller leakage current in an off state than a transistor using amorphous silicon for a semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for a semiconductor film can be used as a switch or the like. This allows the potential of a floating node to be held for a longer time than a circuit using a transistor using amorphous silicon for a switch.

[0182] For example, a 25 nm thick film containing indium, gallium and zinc can be used for the semiconductor film 508 .

[0183] For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used as the conductive film 504. Note that the film containing copper has a region in which the film containing tantalum and nitrogen is sandwiched between the insulating film 506 and the copper-containing film.

[0184] For example, a stacked film in which a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen are stacked can be used as the insulating film 506. Note that the film containing silicon and nitrogen has a region in which the film containing silicon, oxygen, and nitrogen is sandwiched between the semiconductor film 508 and the film containing silicon and nitrogen.

[0185] For example, a conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order can be used as the conductive film 512A or the conductive film 512B. Note that the film containing tungsten has a region in contact with the semiconductor film 508.

[0186] Incidentally, for example, a manufacturing line for bottom-gate transistors using amorphous silicon as a semiconductor can be easily modified to a manufacturing line for bottom-gate transistors using an oxide semiconductor as a semiconductor. Also, for example, a manufacturing line for top-gate transistors using polysilicon as a semiconductor can be easily modified to a manufacturing line for top-gate transistors using an oxide semiconductor as a semiconductor. Either modification can effectively utilize the existing manufacturing line.

[0187] This makes it possible to suppress display flickering. Or, it makes it possible to reduce power consumption. Or, it makes it possible to display fast-moving videos smoothly. Or, it makes it possible to display photographs and the like with a rich range of gradations. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0188] Configuration example 3 of semiconductor film 508 For example, a compound semiconductor can be used as the semiconductor of a transistor, specifically, a semiconductor containing gallium arsenide can be used.

[0189] For example, an organic semiconductor can be used as a semiconductor for a transistor. Specifically, an organic semiconductor containing polyacenes or graphene can be used as a semiconductor film.

[0190] <Capacity configuration example> The capacitor includes a first conductive film, a second conductive film, and an insulating film, the insulating film having a region sandwiched between the first conductive film and the second conductive film.

[0191] For example, a conductive film used for a source electrode or a drain electrode of a transistor, a conductive film used for a gate electrode, and an insulating film used for a gate insulating film can be used as a capacitor.

[0192] <<Configuration Example 2 of Functional Layer 520>> The functional layer 520 includes an insulating film 521, an insulating film 518, an insulating film 516, an insulating film 506, an insulating film 501C, and the like (see FIGS. 10A and 10B).

[0193] The insulating film 521 has a region sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j).

[0194] The insulating film 518 has a region sandwiched between the insulating film 521 and the insulating film 501C.

[0195] The insulating film 516 has a region sandwiched between the insulating film 518 and the insulating film 501C.

[0196] The insulating film 506 has a region sandwiched between the insulating film 516 and the insulating film 501C.

[0197] [Insulating film 521] A film in which the insulating films 521A and 521B are stacked can be used for the insulating film 521. For example, the insulating film 521 can be made of an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material.

[0198] Specifically, the insulating film 521 can be formed using an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a laminated material formed by stacking a plurality of films selected from these.

[0199] For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or a film containing a laminated material selected from these can be used for the insulating film 521. Note that a silicon nitride film is a dense film and has an excellent function of suppressing diffusion of impurities.

[0200] For example, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or a laminated material or composite material of a plurality of resins selected from these can be used for the insulating film 521. Meanwhile, polyimide has superior properties compared to other organic materials in terms of thermal stability, insulating properties, toughness, low dielectric constant, low coefficient of thermal expansion, chemical resistance, etc. For this reason, polyimide can be particularly suitably used for the insulating film 521, etc.

[0201] Alternatively, a photosensitive material may be used to form the insulating film 521. Specifically, the insulating film 521 can be a film formed using a photosensitive polyimide, a photosensitive acrylic resin, or the like.

[0202] This allows the insulating film 521 to flatten steps resulting from various structures overlapping with the insulating film 521, for example.

[0203] [Insulating film 518] For example, the material that can be used for the insulating film 521 can be used for the insulating film 518.

[0204] For example, a material having a function of suppressing diffusion of oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, or the like can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 518. For example, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used for the insulating film 518. This can suppress diffusion of impurities into the semiconductor film of the transistor.

[0205] [Insulating film 516] A stack of the insulating films 516A and 516B can be used for the insulating film 516. For example, the material that can be used for the insulating film 521 can be used for the insulating film 516.

[0206] Specifically, the insulating film 516 can be formed using a method different from that of the insulating film 518.

[0207] [Insulating film 506] For example, the material that can be used for the insulating film 521 can be used for the insulating film 506 .

[0208] Specifically, a film including a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used for the insulating film 506.

[0209] [Insulating film 501D] The insulating film 501D has a region sandwiched between the insulating film 501C and the insulating film 516.

[0210] For example, the material that can be used for the insulating film 506 can be used for the insulating film 501D.

[0211] [Insulating film 501C] For example, the insulating film 501C can be made of a material that can be used for the insulating film 521. Specifically, the insulating film 501C can be made of a material containing silicon and oxygen. This can suppress diffusion of impurities into the pixel circuit, the element 550G(i,j), the element 550S(i,j), and the like.

[0212] <Configuration example 3 of functional layer 520> The functional layer 520 includes a conductive film, wiring, and terminals. A material having electrical conductivity can be used for the wiring, electrodes, terminals, conductive film, and the like.

[0213] [Wiring etc.] For example, inorganic conductive materials, organic conductive materials, metals, conductive ceramics, etc. can be used for wiring, etc.

[0214] Specifically, metal elements selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, and manganese can be used for wiring, etc. Alternatively, alloys containing the above-mentioned metal elements can be used for wiring, etc. In particular, an alloy of copper and manganese is suitable for microfabrication using a wet etching method.

[0215] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, and a three-layer structure in which a titanium film, an aluminum film is laminated on the titanium film, and a titanium film is further formed on top of that can be used for wiring, etc.

[0216] Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide doped with gallium can be used for wiring or the like.

[0217] Specifically, a film containing graphene or graphite can be used for wiring or the like.

[0218] For example, a film including graphene can be formed by forming a film including graphene oxide and reducing the film including graphene oxide. Examples of a reduction method include a method of applying heat and a method of using a reducing agent.

[0219] For example, a film containing metal nanowires can be used for wiring etc. Specifically, nanowires containing silver can be used.

[0220] Specifically, a conductive polymer can be used for wiring and the like.

[0221] For example, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 using a conductive material (see FIG. 9). Specifically, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 using a conductive material CP.

[0222] <Configuration example 2 of function panel 700> Moreover, functional panel 700 includes substrate 510, substrate 770, and sealing material 705 (see FIG. 10A). Functional panel 700 also includes structure KB.

[0223] 《Base material 510, base material 770》 A material having optical transparency can be used for the substrate 510 or the substrate 770 .

[0224] For example, a flexible material can be used for the substrate 510 or the substrate 770. This makes it possible to provide a flexible functional panel.

[0225] For example, a material with a thickness of 0.7 mm or less and 0.1 mm or more can be used. Specifically, a material that has been polished to a thickness of about 0.1 mm can be used. This allows the weight to be reduced.

[0226] By the way, a glass substrate of 6th generation (1500 mm×1850 mm), 7th generation (1870 mm×2200 mm), 8th generation (2200 mm×2400 mm), 9th generation (2400 mm×2800 mm), 10th generation (2950 mm×3400 mm), etc. can be used for the base material 510 or the base material 770. This makes it possible to manufacture a large display device.

[0227] An organic material, an inorganic material, or a composite material such as an organic material and an inorganic material can be used for the substrate 510 or the substrate 770 .

[0228] For example, inorganic materials such as glass, ceramics, and metals can be used. Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically strengthened glass, quartz, sapphire, or the like can be used for the substrate 510 or substrate 770. Alternatively, aluminosilicate glass, tempered glass, chemically strengthened glass, sapphire, or the like can be suitably used for the substrate 510 or substrate 770 disposed on the side of the functional panel closer to the user. This can prevent the functional panel from being damaged or scratched during use.

[0229] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, etc. can be used. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc. can be used. Stainless steel, aluminum, etc. can be used for the substrate 510 or the substrate 770.

[0230] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the base material 510 or the base material 770. This allows a semiconductor element to be formed on the base material 510 or the base material 770.

[0231] For example, organic materials such as resin, resin film, or plastic can be used for the substrate 510 or substrate 770. Specifically, materials containing polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or resin having a siloxane bond such as silicone can be used for the substrate 510 or substrate 770. For example, resin films, resin plates, laminated materials, etc. containing these materials can be used. This can reduce the weight. Or, for example, the frequency of occurrence of breakage due to dropping can be reduced.

[0232] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), cycloolefin polymer (COP), cycloolefin copolymer (COC), or the like can be used for the substrate 510 or substrate 770 .

[0233] For example, a composite material in which a metal plate, a thin glass plate, or a film of an inorganic material or the like is bonded to a resin film or the like can be used for the substrate 510 or the substrate 770. For example, a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin can be used for the substrate 510 or the substrate 770. For example, a composite material in which fibrous or particulate resin, organic material, or the like is dispersed in an inorganic material can be used for the substrate 510 or the substrate 770.

[0234] Furthermore, a single layer material or a material having multiple layers laminated thereon can be used for the substrate 510 or substrate 770. For example, a material having an insulating film or the like laminated thereon can be used. Specifically, a material having one or more films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like laminated thereon can be used. This can prevent, for example, the diffusion of impurities contained in the substrate. Alternatively, it can prevent the diffusion of impurities contained in glass or resin. Alternatively, it can prevent the diffusion of impurities that permeate the resin.

[0235] Also, paper or wood may be used for the substrate 510 or substrate 770 .

[0236] For example, a material having a heat resistance sufficient to withstand heat treatment during the manufacturing process can be used for the base material 510 or the base material 770. Specifically, a material having a heat resistance sufficient to withstand heat applied during a manufacturing process in which a transistor, a capacitor, or the like is directly formed can be used for the base material 510 or the base material 770.

[0237] For example, a method can be used in which an insulating film, a transistor, a capacitor, or the like is formed on a process substrate that has heat resistance to heat applied during the manufacturing process, and the formed insulating film, transistor, capacitor, or the like is transferred to, for example, the base material 510 or the base material 770. In this way, for example, an insulating film, a transistor, a capacitor, or the like can be formed on a substrate that has flexibility.

[0238] "Sealing material 705" The sealing material 705 has an area sandwiched between the functional layer 520 and the base material 770, and has a function of bonding the functional layer 520 and the base material 770 together (see FIG. 10A).

[0239] The sealing material 705 can be an inorganic material, an organic material, or a composite material of an inorganic material and an organic material.

[0240] For example, the sealant 705 can be made of an organic material such as a heat-meltable resin or a curable resin.

[0241] For example, the sealant 705 may be made of an organic material such as a reaction curing adhesive, a photocuring adhesive, a heat curing adhesive, and / or an anaerobic adhesive.

[0242] Specifically, adhesives containing epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used for the sealing material 705.

[0243] 《Structure KB》 The structural body KB has a region sandwiched between the functional layer 520 and the base material 770. In addition, the structural body KB has a function of providing a predetermined gap between the functional layer 520 and the base material 770.

[0244] <Configuration example 2 of function panel 700> The functional panel described in this embodiment has functional layers 520 and 520B (see FIG. 13A). Functional layer 520 includes transistor M21, and transistor M21 includes conductive films 507A and 507B (see FIG. 13B). Functional layer 520B includes drive circuit SD (see FIG. 13A).

[0245] Moreover, the insulating film 501 can be used for the functional layer 520. The insulating film 501 includes an insulating film 501C, an insulating film 501B, and an insulating film 501A. The insulating film 501B includes a region sandwiched between the insulating film 501C and the insulating film 501A. For example, a film containing silicon and nitrogen can be used for the insulating film 501C. This can suppress the diffusion of impurities into the driving circuit SD. Note that the impurities may cause operational malfunctions.

[0246] Example of configuration of functional layer 520B The functional layer 520B includes a driving circuit SD, which includes a transistor MD2, and the transistor MD2 includes a semiconductor including an element of Group 14. For example, a transistor formed on a single crystal silicon substrate can be used as the transistor MD2.

[0247] The transistor MD2 includes a semiconductor 1508, a conductive film 1504, a conductive film 1512A, and a conductive film 1512B (see FIG. 13C).

[0248] The semiconductor 1508 includes a region 1508A electrically connected to the conductive film 1512A and a region 1508B electrically connected to the conductive film 1512B. The semiconductor 1508 includes a region 1508C between the region 1508A and the region 1508B.

[0249] The conductive film 1504 has a region overlapping with the region 1508C, and has a function of a gate electrode.

[0250] The insulating film 1506 has a region sandwiched between the semiconductor 1508 and the conductive film 1504. The insulating film 1506 functions as a gate insulating film.

[0251] The conductive film 1512A has either a source electrode function or a drain electrode function, and the conductive film 1512B has the other of the source electrode function or the drain electrode function.

[0252] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0253] (Embodiment 4) In this embodiment, a structure of a transistor that can be used for a functional panel of one embodiment of the present invention will be described with reference to Fig. 26. For example, the transistor can be used for the transistor M21 or the transistor MD of the functional panel of one embodiment of the present invention described in Embodiment 2 or 3.

[0254] <Example of semiconductor device configuration> A configuration of a semiconductor device having a transistor 300 will be described with reference to FIG. 26. FIGS. 26A to 26D are a top view and a cross-sectional view of a semiconductor device having a transistor 300. FIG. 26A is a top view of the semiconductor device. FIGS. 26B to 26D are cross-sectional views of the semiconductor device. FIG. 26B is a cross-sectional view of a portion indicated by a dashed line A1-A2 in FIG. 26A, and is also a cross-sectional view of the transistor 300 in the channel length direction. FIG. 26C is a cross-sectional view of a portion indicated by a dashed line A3-A4 in FIG. 26A, and is also a cross-sectional view of the transistor 300 in the channel width direction. FIG. 26D is a cross-sectional view of a portion indicated by a dashed line A5-A6 in FIG. 26A. Note that some elements are omitted in the top view of FIG. 26A for clarity.

[0255] The following insulators, conductors, oxides, and semiconductors can be formed by sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), or the like. In this specification and the like, the term "insulator" can be replaced with an insulating film or an insulating layer. The term "conductor" can be replaced with a conductive film or a conductive layer. The term "oxide" can be replaced with an oxide film or an oxide layer. The term "semiconductor" can be replaced with a semiconductor film or a semiconductor layer.

[0256] The semiconductor device of one embodiment of the present invention includes an insulator 312 on a substrate (not shown), an insulator 314 on the insulator 312, a transistor 300 on the insulator 314, an insulator 380 on the transistor 300, an insulator 382 on the insulator 380, an insulator 383 on the insulator 382, ​​and an insulator 385 on the insulator 383. The insulators 312, 314, 380, 382, ​​383, and 385 function as interlayer insulating films. The semiconductor device also includes a conductor 340 (conductor 340a and conductor 340b) that is electrically connected to the transistor 300 and functions as a plug. Note that an insulator 341 (insulator 341a and insulator 341b) is provided in contact with a side surface of the conductor 340 that functions as a plug. In addition, a conductor 346 (conductor 346a and conductor 346b) that is electrically connected to the conductor 340 and functions as wiring is provided on the insulator 385 and the conductor 340.

[0257] Insulator 341a is provided in contact with the inner wall of the opening of insulator 380, insulator 382, ​​insulator 383, and insulator 385, a first conductor of conductor 340a is provided in contact with the side surface of insulator 341a, and a second conductor of conductor 340a is provided further inside. Insulator 341b is provided in contact with the inner wall of the opening of insulator 380, insulator 382, ​​insulator 383, and insulator 385, a first conductor of conductor 340b is provided in contact with the side surface of insulator 341b, and a second conductor of conductor 340b is provided further inside. Here, the height of the top surface of conductor 340 and the height of the top surface of insulator 385 in the region overlapping with conductor 346 can be made approximately the same. Note that, in the transistor 300, a configuration in which the first conductor of conductor 340 and the second conductor of conductor 340 are stacked is shown, but the present invention is not limited to this. For example, the conductor 340 may be provided as a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, the layers may be distinguished by giving ordinal numbers in the order of formation.

[0258] [Transistor 300] As shown in FIGS. 26A to 26D , the transistor 300 includes an insulator 316 on an insulator 314, a conductor 305 (conductor 305a, conductor 305b, and conductor 305c) disposed so as to be embedded in the insulator 316, an insulator 322 on the insulator 316 and on the conductor 305, an insulator 324 on the insulator 322, an oxide 330a on the insulator 324, an oxide 330b on the oxide 330a, an oxide 343 (oxide 343a and oxide 343b) on the oxide 330b, a conductor 342a on the oxide 343a, and a conductor 342b on the oxide 343a. a, conductor 342b on oxide 343b, insulator 371b on conductor 342b, insulator 350 (insulator 350a and insulator 350b) on oxide 330b, conductor 360 (conductor 360a and conductor 360b) located on insulator 350 and overlapping part of oxide 330b, and insulator 375 arranged to cover insulator 322, insulator 324, oxide 330a, oxide 330b, oxide 343a, oxide 343b, conductor 342a, conductor 342b, insulator 371a, and insulator 371b.

[0259] In the following, the oxide 330a and the oxide 330b may be collectively referred to as the oxide 330. The conductor 342a and the conductor 342b may be collectively referred to as the conductor 342. The insulator 371a and the insulator 371b may be collectively referred to as the insulator 371.

[0260] The insulator 380 and the insulator 375 have openings that reach the oxide 330b. The insulator 350 and the conductor 360 are disposed in the openings. In addition, in the channel length direction of the transistor 300, the conductor 360 and the insulator 350 are provided between the insulator 371a, the conductor 342a, and the oxide 343a and the insulator 371b, the conductor 342b, and the oxide 343b. The insulator 350 has a region in contact with a side surface of the conductor 360 and a region in contact with a bottom surface of the conductor 360.

[0261] The oxide 330 preferably has an oxide 330a disposed on the insulator 324 and an oxide 330b disposed on the oxide 330a. By having the oxide 330a below the oxide 330b, it is possible to suppress the diffusion of impurities from a structure formed below the oxide 330a to the oxide 330b.

[0262] Note that in the transistor 300, the oxide 330 has a two-layer structure of the oxide 330a and the oxide 330b, but the present invention is not limited to this. For example, the oxide 330b may have a single layer or a stacked structure of three or more layers, or each of the oxide 330a and the oxide 330b may have a stacked structure.

[0263] The conductor 360 functions as a first gate (also referred to as a top gate) electrode, and the conductor 305 functions as a second gate (also referred to as a back gate) electrode. The insulator 350 functions as a first gate insulating film, and the insulators 324 and 322 function as a second gate insulating film. The conductor 342a functions as one of a source electrode or a drain electrode, and the conductor 342b functions as the other of the source electrode or the drain electrode. At least a part of a region of the oxide 330 overlapping with the conductor 360 functions as a channel formation region.

[0264] The oxide 330b has one of a source region and a drain region in a region overlapping with the conductor 342a, and has the other of the source region and the drain region in a region overlapping with the conductor 342b. The oxide 330b also has a channel formation region (the region indicated by the shaded area in FIG. 26B) between the source region and the drain region.

[0265] The channel formation region is a high-resistance region having a low carrier concentration because it has fewer oxygen vacancies or a lower impurity concentration than the source and drain regions. 18 cm -3 It is preferable that the value is less than 1×10 17 cm -3 More preferably, it is less than 1×10 16 cm -3 More preferably, it is less than 1×10 13 cm -3 More preferably, it is less than 1×10 12 cm -3 The lower limit of the carrier concentration in the channel formation region is not particularly limited, but is preferably, for example, 1×10 -9 cm -3 It can be said that:

[0266] In the above, the channel formation region, the source region, and the drain region are formed in the oxide 330b, but the present invention is not limited to this. For example, the channel formation region, the source region, and the drain region may be formed in the oxide 330a in the same manner.

[0267] In the transistor 300, a metal oxide that functions as a semiconductor (hereinafter also referred to as an oxide semiconductor) is preferably used for the oxide 330 including the channel formation region (the oxide 330a and the oxide 330b).

[0268] In addition, the metal oxide functioning as a semiconductor preferably has a band gap of 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide having a wide band gap in this way, the off-state current of a transistor can be reduced.

[0269] As the oxide 330, for example, a metal oxide such as an In-M-Zn oxide having indium, an element M, and zinc (wherein the element M is one or more selected from aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc.) may be used. Alternatively, as the oxide 330, an In-Ga oxide, an In-Zn oxide, or an indium oxide may be used.

[0270] Here, it is preferable that the atomic ratio of In to the element M in the metal oxide used for oxide 330b is greater than the atomic ratio of In to the element M in the metal oxide used for oxide 330a.

[0271] Specifically, the oxide 330a may be a metal oxide having a composition of In:M:Zn=1:3:4 [atomic ratio] or a composition close thereto, or In:M:Zn=1:1:0.5 [atomic ratio] or a composition close thereto. The oxide 330b may be a metal oxide having a composition of In:M:Zn=1:1:1 [atomic ratio] or a composition close thereto, or In:M:Zn=4:2:3 [atomic ratio] or a composition close thereto. The composition close thereto includes a range of ±30% of the desired atomic ratio. The element M is preferably gallium.

[0272] In addition, when a metal oxide film is formed by a sputtering method, the above atomic ratio is not limited to the atomic ratio of the formed metal oxide film, but may be the atomic ratio of a sputtering target used to form the metal oxide film.

[0273] In this manner, by disposing the oxide 330a below the oxide 330b, it is possible to suppress the diffusion of impurities and oxygen from structures formed below the oxide 330a into the oxide 330b.

[0274] In addition, since the oxide 330a and the oxide 330b have a common element other than oxygen (as a main component), the defect state density at the interface between the oxide 330a and the oxide 330b can be reduced. Since the defect state density at the interface between the oxide 330a and the oxide 330b can be reduced, the effect of interface scattering on carrier conduction is small, and a high on-current can be obtained.

[0275] It is preferable that the oxide 330a and the oxide 330b each have crystallinity. In particular, it is preferable to use c-axis aligned crystalline oxide semiconductor (CAAC-OS) as the oxide 330b.

[0276] CAAC-OS has a highly crystalline and dense structure and is free of impurities and defects (e.g., oxygen vacancies (V OIn particular, by subjecting the metal oxide to heat treatment at a temperature at which the metal oxide does not polycrystallize (for example, 400° C. or higher and 600° C. or lower) after formation of the metal oxide, the CAAC-OS can have a dense structure with higher crystallinity. In this way, the density of the CAAC-OS can be increased, thereby further reducing the diffusion of impurities or oxygen in the CAAC-OS.

[0277] On the other hand, it is difficult to identify clear grain boundaries in CAAC-OS, so it is unlikely that the electron mobility will decrease due to grain boundaries. Therefore, metal oxides with CAAC-OS have stable physical properties. Therefore, metal oxides with CAAC-OS are resistant to heat and highly reliable.

[0278] At least one of the insulators 312, 314, 371, 375, 382, ​​and 383 preferably functions as a barrier insulating film that suppresses diffusion of impurities such as water and hydrogen from the substrate side or from above the transistor 300 to the transistor 300. Therefore, at least one of the insulators 312, 314, 371, 375, 382, ​​and 383 is preferably made of an insulating material that has a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (NO, NO, NO, etc.), and copper atoms (through which the above impurities are unlikely to permeate). Alternatively, it is preferable to use an insulating material that has a function of suppressing diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) (through which the above oxygen is unlikely to permeate).

[0279] In this specification, a barrier insulating film refers to an insulating film having a barrier property. In this specification, the barrier property means a function of suppressing the diffusion of a corresponding substance (also called low permeability) or a function of capturing and fixing a corresponding substance (also called gettering).

[0280] For example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide can be used for the insulators 312, 314, 371, 375, 382, ​​and 383. For example, it is preferable to use silicon nitride or the like, which has a higher hydrogen barrier property, for the insulators 312, 375, and 383. For example, it is preferable to use aluminum oxide or magnesium oxide, which has a higher function of capturing and fixing hydrogen, for the insulators 314, 371, and 382. This can suppress impurities such as water and hydrogen from diffusing from the substrate side to the transistor 300 side through the insulators 312 and 314. Alternatively, it is possible to suppress impurities such as water and hydrogen from diffusing from an interlayer insulating film or the like disposed outside the insulator 383 to the transistor 300 side. Alternatively, oxygen contained in the insulator 324 or the like can be suppressed from diffusing toward the substrate side through the insulator 312 and the insulator 314. Alternatively, oxygen contained in the insulator 380 or the like can be suppressed from diffusing upward from the transistor 300 through the insulator 382 or the like. In this manner, it is preferable to have a structure in which the transistor 300 is surrounded by the insulators 312, 314, 371, 375, 382, ​​and 383, which have a function of suppressing the diffusion of impurities such as water and hydrogen, and oxygen.

[0281] Here, it is preferable to use an oxide having an amorphous structure as the insulators 312, 314, 371, 375, 382, ​​and 383. For example, AlO x (x is any number greater than 0), or MgO yIt is preferable to use a metal oxide such as y (y is any number greater than 0). In such a metal oxide having an amorphous structure, oxygen atoms have dangling bonds, and the dangling bonds may have the property of capturing or fixing hydrogen. By using such a metal oxide having an amorphous structure as a component of the transistor 300 or providing it around the transistor 300, hydrogen contained in the transistor 300 or hydrogen present around the transistor 300 can be captured or fixed. In particular, it is preferable to capture or fix hydrogen contained in the channel formation region of the transistor 300. By using a metal oxide having an amorphous structure as a component of the transistor 300 or providing it around the transistor 300, a transistor 300 and a semiconductor device having good characteristics and high reliability can be manufactured.

[0282] Note that the insulators 312, 314, 371, 375, 382, ​​and 383 preferably have an amorphous structure, but may have a polycrystalline region in a portion thereof. The insulators 312, 314, 371, 375, 382, ​​and 383 may have a multilayer structure in which a layer of an amorphous structure and a layer of a polycrystalline structure are stacked. For example, they may have a stacked structure in which a layer of a polycrystalline structure is formed on a layer of an amorphous structure.

[0283] The insulators 312, 314, 371, 375, 382, ​​and 383 may be formed by, for example, a sputtering method. Because the sputtering method does not require the use of hydrogen as a film formation gas, the hydrogen concentration of the insulators 312, 314, 371, 375, 382, ​​and 383 can be reduced. Note that the film formation method is not limited to the sputtering method, and a CVD method, an MBE method, a PLD method, an ALD method, or the like may be used as appropriate.

[0284] The insulators 316, 380, and 385 preferably have a lower dielectric constant than the insulator 314. By using a material with a low dielectric constant as an interlayer insulating film, parasitic capacitance between wirings can be reduced. For example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine has been added, silicon oxide to which carbon has been added, silicon oxide to which carbon and nitrogen have been added, silicon oxide having vacancies, or the like may be used as appropriate for the insulators 316, 380, and 385.

[0285] The conductor 305 is disposed so as to overlap the oxide 330 and the conductor 360. Here, the conductor 305 is preferably provided by being embedded in an opening formed in the insulator 316.

[0286] The conductor 305 includes conductor 305a, conductor 305b, and conductor 305c. The conductor 305a is provided in contact with the bottom surface and side wall of the opening. The conductor 305b is provided so as to be embedded in a recess formed in the conductor 305a. Here, the upper surface of the conductor 305b is lower than the upper surface of the conductor 305a and the upper surface of the insulator 316. The conductor 305c is provided in contact with the upper surface of the conductor 305b and the side surface of the conductor 305a. Here, the height of the upper surface of the conductor 305c is approximately equal to the height of the upper surface of the conductor 305a and the height of the upper surface of the insulator 316. In other words, the conductor 305b is configured to be wrapped in the conductor 305a and the conductor 305c.

[0287] The conductor 305a and the conductor 305c may be made of a conductive material that can be used for the conductor 360a, which will be described later. The conductor 305b may be made of a conductive material that can be used for the conductor 360b, which will be described later. Although the conductor 305 in the transistor 300 has a stacked structure of the conductor 305a, the conductor 305b, and the conductor 305c, the present invention is not limited to this. For example, the conductor 305 may be provided as a single layer, a two-layer, or a four or more layer stacked structure.

[0288] The insulators 322 and 324 function as gate insulating films.

[0289] The insulator 322 preferably has a function of suppressing the diffusion of hydrogen (e.g., at least one of hydrogen atoms, hydrogen molecules, etc.). The insulator 322 preferably has a function of suppressing the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). For example, the insulator 322 preferably has a function of suppressing the diffusion of one or both of hydrogen and oxygen more than the insulator 324.

[0290] The insulator 322 may be an insulator containing an oxide of one or both of insulating materials, aluminum and hafnium. As the insulator, it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like. Alternatively, the insulator 322 may be a barrier insulating film that can be used for the insulator 314 described above.

[0291] The insulator 324 may be made of silicon oxide, silicon oxynitride, or the like as appropriate. By providing the insulator 324 containing oxygen in contact with the oxide 330, oxygen vacancies in the oxide 330 can be reduced and the reliability of the transistor 300 can be improved. The insulator 324 is preferably processed into an island shape so as to overlap with the oxide 330a. In this case, the insulator 375 is in contact with a side surface of the insulator 324 and an upper surface of the insulator 322. This allows the insulator 324 and the insulator 380 to be separated from each other by the insulator 375, and therefore oxygen contained in the insulator 380 can be diffused into the insulator 324, preventing the insulator 324 from becoming excessively oxygen-rich.

[0292] The insulator 322 and the insulator 324 may have a laminated structure of two or more layers. In this case, the laminated structure is not limited to being made of the same material, and may be made of different materials. Although FIG. 26B and other figures show a configuration in which the insulator 324 is formed in an island shape by overlapping with the oxide 330a, the present invention is not limited to this. If the amount of oxygen contained in the insulator 324 can be appropriately adjusted, the insulator 324 may be configured not to be patterned, similar to the insulator 322.

[0293] The oxide 343a and the oxide 343b are provided on the oxide 330b. The oxide 343a and the oxide 343b are provided to be separated from each other with the conductor 360 interposed therebetween. The oxide 343 (the oxide 343a and the oxide 343b) preferably has a function of suppressing oxygen permeation. By disposing the oxide 343 having a function of suppressing oxygen permeation between the conductor 342 functioning as a source electrode or a drain electrode and the oxide 330b, the electrical resistance between the conductor 342 and the oxide 330b is reduced, which is preferable. Note that if the electrical resistance between the conductor 342 and the oxide 330b can be sufficiently reduced, the oxide 343 may not be provided.

[0294] A metal oxide having element M may be used as oxide 343. In particular, element M may be aluminum, gallium, yttrium, or tin. It is preferable that oxide 343 has a higher concentration of element M than oxide 330b. Gallium oxide may be used as oxide 343. Metal oxide such as In-M-Zn oxide may be used as oxide 343. Specifically, in the metal oxide used for oxide 343, the atomic ratio of element M to In is preferably larger than the atomic ratio of element M to In in the metal oxide used for oxide 330b. The film thickness of oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and even more preferably 1 nm or more and 2 nm or less.

[0295] It is preferable that the conductor 342a be provided in contact with a top surface of the oxide 343a, and the conductor 342b be provided in contact with a top surface of the oxide 343b. The conductor 342a and the conductor 342b function as a source electrode and a drain electrode of the transistor 300, respectively.

[0296] As the conductor 342 (conductor 342a and conductor 342b), for example, a nitride containing tantalum, a nitride containing titanium, a nitride containing molybdenum, a nitride containing tungsten, a nitride containing tantalum and aluminum, a nitride containing titanium and aluminum, or the like is preferably used. In one embodiment of the present invention, a nitride containing tantalum is particularly preferable. Also, for example, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, or the like may be used. These materials are preferable because they are conductive materials that are difficult to oxidize, or materials that maintain their conductivity even when they absorb oxygen.

[0297] Moreover, it is preferable that no curved surface is formed between the side surface of the conductor 342 and the top surface of the conductor 342. By forming the conductor 342 without such a curved surface, it is possible to increase the cross-sectional area of ​​the conductor 342 in the cross section in the channel width direction as shown in Fig. 26D. This can increase the conductivity of the conductor 342 and the on-current of the transistor 300.

[0298] The insulator 371a is provided in contact with the upper surface of the conductor 342a, and the insulator 371b is provided in contact with the upper surface of the conductor 342b.

[0299] The insulator 375 is provided in contact with the top surface of the insulator 322, the side surface of the insulator 324, the side surface of the oxide 330a, the side surface of the oxide 330b, the side surface of the oxide 343, the side surface of the conductor 342, and the side surface and top surface of the insulator 371. The insulator 375 has openings formed in the regions where the insulator 350 and the conductor 360 are provided.

[0300] By providing insulators 314, 371, and 375, which have the function of capturing impurities such as hydrogen, in the region sandwiched between insulators 312 and 383, impurities such as hydrogen contained in insulator 324 or insulator 316 can be captured and the amount of hydrogen in the region can be kept constant. In this case, insulators 314, 371, and 375 preferably contain aluminum oxide with an amorphous structure.

[0301] The insulator 350 has an insulator 350a and an insulator 350b on the insulator 350a, and functions as a gate insulating film. The insulator 350a is preferably disposed in contact with the top surface of the oxide 330b, a side surface of the oxide 343, a side surface of the conductor 342, a side surface of the insulator 371, a side surface of the insulator 375, and a side surface of the insulator 380. The thickness of the insulator 350 is preferably 1 nm or more and 20 nm or less.

[0302] The insulator 350a may be made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon, silicon oxide doped with carbon and nitrogen, silicon oxide having vacancies, or the like. Silicon oxide and silicon oxynitride are particularly preferred because they are stable against heat. As with the insulator 324, the insulator 350a preferably has a reduced concentration of impurities such as water and hydrogen.

[0303] It is preferable that the insulator 350a is formed using an insulator that releases oxygen when heated, and the insulator 350b is formed using an insulator that has a function of suppressing diffusion of oxygen. With such a configuration, it is possible to suppress the diffusion of oxygen contained in the insulator 350a into the conductor 360. In other words, it is possible to suppress a decrease in the amount of oxygen supplied to the oxide 330. In addition, it is possible to suppress oxidation of the conductor 360 due to the oxygen contained in the insulator 350a. For example, the insulator 350b can be provided using a material similar to that of the insulator 322.

[0304] Specifically, the insulator 350b may be a metal oxide containing one or more of hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, or a metal oxide that can be used as the oxide 330. In particular, it is preferable to use an insulator containing an oxide of one or both of aluminum and hafnium. It is preferable to use aluminum oxide, hafnium oxide, or an oxide containing aluminum and hafnium (hafnium aluminate) as the insulator. The thickness of the insulator 350b is preferably 0.5 nm or more and 3.0 nm or less, and more preferably 1.0 nm or more and 1.5 nm or less.

[0305] 26B and 26C, the insulator 350 is illustrated as having a two-layer laminated structure, but the present invention is not limited to this. The insulator 350 may have a single layer structure or a laminated structure of three or more layers.

[0306] The conductor 360 is provided on the insulator 350b and functions as a first gate electrode of the transistor 300. The conductor 360 preferably includes a conductor 360a and a conductor 360b disposed on the conductor 360a. For example, the conductor 360a is preferably disposed so as to surround the bottom and side surfaces of the conductor 360b. As shown in FIGS. 26B and 26C, the top surface of the conductor 360 is substantially flush with the top surface of the insulator 350. Note that, although the conductor 360 is shown as having a two-layer structure of the conductor 360a and the conductor 360b in FIGS. 26B and 26C, the conductor 360 may have a single-layer structure or a stacked structure of three or more layers.

[0307] The conductor 360a is preferably made of a conductive material having a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules, copper atoms, etc. Alternatively, it is preferably made of a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.).

[0308] Furthermore, since the conductor 360a has a function of suppressing oxygen diffusion, it is possible to suppress a decrease in conductivity due to oxidation of the conductor 360b caused by oxygen contained in the insulator 350. As a conductive material having a function of suppressing oxygen diffusion, it is preferable to use, for example, titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like.

[0309] In addition, since the conductor 360 also functions as wiring, it is preferable to use a conductor with high conductivity. For example, the conductor 360b can be a conductive material mainly composed of tungsten, copper, or aluminum. The conductor 360b may also have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material.

[0310] Furthermore, in the transistor 300, the conductor 360 is formed in a self-aligned manner so as to fill an opening formed in the insulator 380 or the like. By forming the conductor 360 in this manner, the conductor 360 can be reliably placed in the region between the conductor 342a and the conductor 342b without alignment.

[0311] 26C, in the channel width direction of the transistor 300, the height of the bottom surface of the conductor 360 in a region where the conductor 360 and the oxide 330b do not overlap is preferably lower than the height of the bottom surface of the oxide 330b when the bottom surface of the insulator 322 is used as a reference. The conductor 360, which functions as a gate electrode, is configured to cover the side and top surfaces of the channel formation region of the oxide 330b via the insulator 350 or the like, so that the electric field of the conductor 360 can be easily applied to the entire channel formation region of the oxide 330b. This makes it possible to increase the on-current of the transistor 300 and improve the frequency characteristics. When the bottom surface of the insulator 322 is used as a reference, the difference between the height of the bottom surface of the conductor 360 in a region where the oxides 330a and 330b do not overlap with the conductor 360 and the height of the bottom surface of the oxide 330b is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, and more preferably 5 nm or more and 20 nm or less.

[0312] The insulator 380 is provided on the insulator 375, and has openings formed in the regions where the insulator 350 and the conductor 360 are provided. The upper surface of the insulator 380 may be flattened. In this case, it is preferable that the upper surface of the insulator 380 is roughly flush with the upper surfaces of the insulator 350 and the conductor 360.

[0313] The insulator 382 is provided in contact with the top surface of the insulator 380, the top surface of the insulator 350, and the top surface of the conductor 360. The insulator 382 preferably functions as a barrier insulating film that suppresses diffusion of impurities such as water and hydrogen from above into the insulator 380, and preferably has a function of capturing impurities such as hydrogen. The insulator 382 preferably functions as a barrier insulating film that suppresses oxygen transmission. For example, an insulator such as aluminum oxide may be used as the insulator 382. By providing the insulator 382 in contact with the insulator 380 and having a function of capturing impurities such as hydrogen in a region sandwiched between the insulator 312 and the insulator 383, the impurities such as hydrogen contained in the insulator 380 can be captured, and the amount of hydrogen in the region can be kept constant. In particular, it is preferable to use aluminum oxide having an amorphous structure as the insulator 382 because hydrogen can be more effectively captured or fixed. This makes it possible to manufacture a transistor 300 and a semiconductor device having excellent characteristics and high reliability.

[0314] The conductor 340a and the conductor 340b are preferably made of a conductive material containing tungsten, copper, or aluminum as a main component. The conductor 340a and the conductor 340b may have a layered structure. When the conductor 340 has a layered structure, the conductor in contact with the insulator 341 is preferably made of a conductive material that has a function of suppressing the permeation of impurities such as water and hydrogen. For example, the conductive material that can be used for the conductor 360a described above may be used.

[0315] As the insulator 341a and the insulator 341b, for example, an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide may be used. The insulator 341a and the insulator 341b are provided in contact with the insulator 383, the insulator 382, ​​and the insulator 371, and therefore can prevent impurities such as water and hydrogen contained in the insulator 380 and the like from being mixed into the oxide 330 through the conductor 340a and the conductor 340b.

[0316] Conductors 346 (conductors 346a and 346b) may be disposed in contact with the upper surface of conductor 340a and the upper surface of conductor 340b to function as wiring. Conductor 346 is preferably made of a conductive material containing tungsten, copper, or aluminum as a main component. The conductor may have a laminated structure, for example, a laminate of titanium or titanium nitride and the above-mentioned conductive material. The conductor may be formed so as to be embedded in an opening provided in an insulator.

[0317] As a result, a semiconductor device having good electrical characteristics can be provided. A semiconductor device having good reliability can be provided. A semiconductor device that can be miniaturized or highly integrated can be provided. A semiconductor device with low power consumption can be provided.

[0318] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0319] (Embodiment 5) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to drawings.

[0320] <Configuration example 1 of function panel 700> Functional panel 700 includes element 550G(i,j) and element 550S(i,j) (see FIG. 9).

[0321] Configuration example 1 of element 550G(i,j) The element 550G(i,j) includes an electrode 551G(i,j), an electrode 552, and a layer 553 including a light-emitting material (see FIG. 10A). The layer 553 including a light-emitting material includes a region sandwiched between the electrode 551G(i,j) and the electrode 552.

[0322] [Configuration example 1 of the layer 553 containing a light-emitting material] For example, a laminate material can be used for the layer 553 containing the luminescent material.

[0323] For example, a material that emits blue light, a material that emits green light, a material that emits red light, a material that emits infrared light, or a material that emits ultraviolet light can be used for the layer 553 containing the light-emitting material.

[0324] [Configuration example 2 of the layer 553 containing a light-emitting material] For example, a layer of laminated material that is laminated to emit white light can be used for the layer 553 containing the luminescent material.

[0325] Specifically, a plurality of materials emitting light with different hues can be used for the layer 553 containing a light-emitting material.

[0326] For example, a laminated material in which a layer including a light-emitting material including a fluorescent material that emits blue light and a layer including a material other than the fluorescent material that emits green and red light are laminated can be used for the layer including the light-emitting material 553. Alternatively, a laminated material in which a layer including a light-emitting material including a fluorescent material that emits blue light and a layer including a material other than the fluorescent material that emits yellow light are laminated can be used for the layer including the light-emitting material 553.

[0327] For example, a colored film CF can be overlapped on the layer 553 containing a light-emitting material, which allows light of a predetermined hue to be extracted from white light.

[0328] [Configuration example 3 of the layer 553 containing a light-emitting material] For example, a laminated material that is laminated so as to emit blue light or ultraviolet light can be used for the layer containing a light-emitting material 553. In addition, for example, a color conversion layer can be used by being laminated.

[0329] [Configuration example 4 of the layer 553 containing a light-emitting material] The layer 553 containing a light-emitting material includes a light-emitting unit. The light-emitting unit includes one region where electrons injected from one side recombine with holes injected from the other side. The light-emitting unit includes a light-emitting material, and the light-emitting material emits energy generated by the recombination of electrons and holes as light. A hole transport layer and an electron transport layer can be used for the light-emitting unit. The hole transport layer is disposed closer to the positive electrode side than the electron transport layer, and the hole transport layer has a higher hole mobility than the electron transport layer.

[0330] For example, a plurality of light-emitting units and an intermediate layer can be used in the layer 553 containing a light-emitting material. The intermediate layer has a region sandwiched between two light-emitting units. The intermediate layer has a charge generating region, and has a function of supplying holes to the light-emitting unit arranged on the cathode side and supplying electrons to the light-emitting unit arranged on the anode side. Note that a configuration having a plurality of light-emitting units and an intermediate layer is sometimes called a tandem-type light-emitting element.

[0331] This makes it possible to increase the current efficiency relating to light emission, or to reduce the current density flowing through the light emitting element at the same luminance, or to increase the reliability of the light emitting element.

[0332] For example, a light-emitting unit including a material that emits light of one hue can be stacked with a light-emitting unit including a material that emits light of another hue and used in the layer including the light-emitting material 553. Alternatively, a light-emitting unit including a material that emits light of one hue can be stacked with a light-emitting unit including a material that emits light of the same hue and used in the layer including the light-emitting material 553. Specifically, two light-emitting units including a material that emits blue light can be stacked and used.

[0333] Incidentally, for example, high molecular weight compounds (oligomers, dendrimers, polymers, etc.), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), etc. can be used for the layer 553 containing a light-emitting material.

[0334] [Electrode 551G(i,j), electrode 552] For example, a material that can be used for a wiring or the like can be used for the electrode 551G(i,j) or the electrode 552. Specifically, a material that transmits visible light can be used for the electrode 551G(i,j) or the electrode 552.

[0335] For example, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide with gallium added, or the like can be used. Alternatively, a metal film that is thin enough to transmit light can be used. Alternatively, a material that transmits visible light can be used.

[0336] For example, a metal film that transmits part of light and reflects other part of light can be used for the electrode 551G(i,j) or the electrode 552. For example, the distance between the electrode 551G(i,j) and the electrode 552 is adjusted using a layer 553 containing a light-emitting material.

[0337] This allows a microresonator structure to be provided in element 550G(i,j). Alternatively, light of a specific wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow half-width spectrum can be extracted. Alternatively, light of a vivid color can be extracted.

[0338] For example, a film that efficiently reflects light can be used for the electrode 551G(i,j) or the electrode 552. Specifically, a material containing silver, palladium, or the like or a material containing silver, copper, or the like can be used for the metal film.

[0339] Furthermore, the electrode 551G(i,j) is electrically connected to the pixel circuit 530G(i,j) through the opening 591G (see FIG. 11A). The electrode 551G(i,j) overlaps, for example, an opening formed in the insulating film 528, and the electrode 551G(i,j) has the insulating film 528 on its periphery.

[0340] This makes it possible to prevent a short circuit between electrode 551G(i,j) and electrode 552.

[0341] <<Configuration Example 1 of Element 550S(i,j)>> The element 550S(i,j) includes an electrode 551S(i,j), an electrode 552, and a layer 553S(j) containing a photoelectric conversion material (see FIG. 11A). The electrode 551S(i,j) is electrically connected to the pixel circuit 530S(i,j), and the electrode 552 is electrically connected to the conductive film VPD (see FIG. 7). The electrode 552 used for the element 550G(i,j) can be used for the element 550S(i,j). This can simplify the configuration and manufacturing process of the functional panel.

[0342] For example, a heterojunction type photoelectric conversion element, a bulk heterojunction type photoelectric conversion element, or the like can be used for the element 550S(i,j).

[0343] [Configuration example 1 of layer 553S(j) containing photoelectric conversion material] For example, a laminated film in which a p-type semiconductor film and an n-type semiconductor film are laminated so as to be in contact with each other can be used for the layer 553S(j) containing a photoelectric conversion material. Note that an element 550S(i,j) using such a laminated film structure for the layer 553S(j) containing a photoelectric conversion material can be called a PN-type photodiode.

[0344] For example, a laminated film in which a p-type semiconductor film, an i-type semiconductor film, and an n-type semiconductor film are laminated so that an i-type semiconductor film is sandwiched between a p-type semiconductor film and an n-type semiconductor film can be used for the layer 553S(j) containing a photoelectric conversion material. Note that an element 550S(i,j) using a laminated film of such a structure for the layer 553S(j) containing a photoelectric conversion material can be called a PIN-type photodiode.

[0345] For example, a laminated film in which a p+ type semiconductor film, a p- type semiconductor film, a p type semiconductor film, and an n type semiconductor film are laminated so that a p- type semiconductor film is sandwiched between a p+ type semiconductor film and an n type semiconductor film, and a p type semiconductor film is sandwiched between the p- type semiconductor film and the n type semiconductor film, can be used for the layer 553S(j) containing a photoelectric conversion material. Note that an element 550S(i,j) using such a laminated film structure for the layer 553S(j) containing a photoelectric conversion material can be called an avalanche photodiode.

[0346] [Configuration example 2 of layer 553S(j) containing photoelectric conversion material] For example, a semiconductor containing a group 14 element can be used for the layer 553S(j) containing the photoelectric conversion material. Specifically, a semiconductor containing silicon can be used for the layer 553S(j) containing the photoelectric conversion material. For example, hydrogenated amorphous silicon, microcrystalline silicon, polysilicon, single crystal silicon, or the like can be used for the layer 553S(j) containing the photoelectric conversion material.

[0347] For example, an organic semiconductor can be used for the layer 553S(j) containing a photoelectric conversion material. Specifically, a part of the layer 553 containing a light-emitting material can be used for a part of the layer 553S(j) containing a photoelectric conversion material.

[0348] Specifically, a hole-transporting layer used in the layer 553 containing a light-emitting material can be used in the layer 553S(j) containing a photoelectric conversion material. Alternatively, an electron-transporting layer used in the layer 553 containing a light-emitting material can be used in the layer 553S(j) containing a photoelectric conversion material. Alternatively, a hole-transporting layer and an electron-transporting layer can be used in the layer 553S(j) containing a photoelectric conversion material.

[0349] Thereby, a hole-transport layer for the layer 553S(j) containing a photoelectric conversion material can be formed in a step of forming a hole-transport layer for the layer 553 containing a light-emitting material. Alternatively, an electron-transport layer for the layer 553S(j) containing a photoelectric conversion material can be formed in a step of forming an electron-transport layer for the layer 553 containing a light-emitting material. Alternatively, the manufacturing process can be simplified.

[0350] Also, for example, fullerenes (e.g., C 60 , C 70 An electron-accepting organic semiconductor material such as ZnO, ZnSe, etc. or a derivative thereof can be used for the n-type semiconductor film.

[0351] For example, a fullerene derivative dissolved or dispersed in a solvent can be used for the layer 553S(i,j) including a photoelectric conversion material. Specifically, [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1′,1″,4′,4″-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2″,3″][5,6]fullerene-C60 (abbreviation: ICBA), or the like can be used for the layer 553S(i,j) including a photoelectric conversion material.

[0352] Furthermore, for example, an electron-donating organic semiconductor material such as copper(II) phthalocyanine (CuPc) or tetraphenyldibenzoperiflanthene (DBP) can be used for the p-type semiconductor film.

[0353] For example, a π-conjugated organic polymer material, oligomer, or low molecular weight material that is dissolved or dispersed in a solvent can be used for the layer 553S(i,j) including the photoelectric conversion material. Specifically, a polyphenylenevinylene-based material or a polythiophene-based material can be used for the layer 553S(i,j) including the photoelectric conversion material. Specifically, Poly([2,6′-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (abbreviation: PTB7-Th), Poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (abbreviation: PYB7), Poly(3-hexylthiophene-2,5-diyl) (abbreviation: P3HT), or the like can be used for the layer 553S(i,j) containing a photoelectric conversion material.

[0354] Also, for example, a film obtained by co-evaporating an electron-accepting semiconductor material and an electron-donating semiconductor material can be used as the i-type semiconductor film.

[0355] <Configuration example 2 of function panel 700> The functional panel 700 includes an insulating film 528 and an insulating film 573 (see FIG. 10A).

[0356] "Insulating Film 528" The insulating film 528 has a region sandwiched between the functional layer 520 and the base material 770, and the insulating film 528 has openings in regions overlapping with the elements 550G(i,j) and 550S(i,j) (see FIG. 10A).

[0357] For example, the same material as that used for the insulating film 521 can be used for the insulating film 528. Specifically, the insulating film 528 can be a silicon oxide film, a film containing an acrylic resin, a film containing polyimide, or the like.

[0358] "Insulating Film 573" The insulating film 573 has a region that sandwiches the elements 550G(i,j) and 550S(i,j) between itself and the functional layer 520 (see FIG. 10A).

[0359] For example, a single film or a laminated film in which a plurality of films are laminated can be used for the insulating film 573. Specifically, a laminated film in which an insulating film 573A that can be formed by a method that does not easily damage the elements 550G(i,j) and the elements 550S(i,j) and a dense insulating film 573B with few defects are laminated can be used for the insulating film 573.

[0360] This can suppress the diffusion of impurities into the elements 550G(i,j) and 550S(i,j), or can improve the reliability of the elements 550G(i,j) and 550S(i,j).

[0361] <Configuration example 3 of function panel 700> The functional panel 700 includes a functional layer 720 (see FIG. 10A).

[0362] <Functional Layer 720> The functional layer 720 includes a light-shielding film BM, a colored film CF(G), and an insulating film 771. A color conversion layer can also be used.

[0363] 《Light blocking film BM》 The light-shielding film BM has an opening in a region overlapping with the pixel 702G(i,j) and also has an opening in a region overlapping with the pixel 702S(i,j) (see FIG. 11A).

[0364] For example, a dark color material can be used for the light-shielding film BM, which can improve the display contrast.

[0365] 《Colored film CF(G)》 The colored film CF(G) has an area sandwiched between the base material 770 and the element 550G(i,j). For example, a material that selectively transmits light of a predetermined color can be used for the colored film CF(G). Specifically, a material that transmits red light, green light, or blue light can be used for the colored film CF(G).

[0366] <<Example of the configuration of insulating film 771>> The insulating film 771 has a region sandwiched between the base material 770 and the element 550G(i,j).

[0367] The insulating film 771 has an area in which the light-shielding film BM, the colored film CF(G), or the color conversion layer is sandwiched between the insulating film 771 and the base material 770. This makes it possible to flatten unevenness resulting from the thickness of the light-shielding film BM, the colored film CF(G), or the color conversion layer.

[0368] Color conversion layer The color conversion layer comprises a region sandwiched between substrate 770 and element 550G(i,j).

[0369] For example, a material that emits light having a wavelength longer than the wavelength of the incident light can be used for the color conversion layer. For example, a material that absorbs blue light or ultraviolet light and converts it to green light and emits it, a material that absorbs blue light or ultraviolet light and converts it to red light and emits it, or a material that absorbs ultraviolet light and converts it to blue light and emits it can be used for the color conversion layer. Specifically, quantum dots with a diameter of several nm can be used for the color conversion layer. This allows light to be emitted with a spectrum with a narrow half-width. Or, light with high saturation can be emitted.

[0370] <Configuration example 4 of function panel 700> The functional panel 700 includes a light-shielding film KBM (see FIGS. 10A and 11A).

[0371] 《Light blocking film KBM》 The light-shielding film KBM has an opening in a region overlapping with the pixel 702S(i,j). The light-shielding film KBM also has a region sandwiched between the functional layer 520 and the base material 770, and has a function of providing a predetermined gap between the functional layer 520 and the base material 770. For example, a dark-colored material can be used for the light-shielding film KBM. This makes it possible to suppress stray light from entering the pixel 702S(i,j).

[0372] <Configuration example 5 of function panel 700> The functional panel 700 includes a functional film 770P (see FIG. 10A).

[0373] 《Functional membrane 770P, etc.》 The functional film 770P has an area that overlaps with the element 550G(i,j).

[0374] For example, an anti-reflection film, a polarizing film, a retardation film, a light diffusing film, a light collecting film, or the like can be used for the functional film 770P.

[0375] For example, an anti-reflection film having a thickness of 1 μm or less can be used for the functional film 770P. Specifically, a laminated film having three or more dielectric layers, preferably five or more dielectric layers, more preferably fifteen or more dielectric layers can be used for the functional film 770P. This makes it possible to suppress the reflectance to 0.5% or less, preferably 0.08% or less.

[0376] For example, a circularly polarizing film can be used for the functional film 770P.

[0377] In addition, the functional film 770P can be used with antistatic films that prevent dust from sticking, water-repellent films that make it difficult for dirt to adhere, oil-repellent films that make it difficult for dirt to adhere, anti-reflection films, non-glossy films (anti-glare films), hard coat films that prevent scratches from occurring during use, and self-repairing films that repair any scratches that do occur.

[0378] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0379] (Embodiment 6) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to drawings.

[0380] FIG. 14A is a block diagram illustrating a configuration of a functional panel according to one embodiment of the present invention, and FIG. 14B is a block diagram illustrating a portion of FIG. 14A.

[0381] FIG. 15 is a diagram for explaining the operation of a functional panel according to an embodiment of the present invention.

[0382] <Configuration example 1 of function panel 700> The functional panel 700 described in this embodiment has an area 231 (see FIG. 14).

[0383] <<Configuration Example 1 of Area 231>> The region 231 includes a group of pixels 703(i,1) to 703(i,n) and another group of pixels 703(1,j) to 703(m,j). The region 231 includes a conductive film G1(i), a conductive film TX(i), a conductive film S1g(j), and a conductive film WX(j).

[0384] A group of a set of pixels 703(i,1) to a set of pixels 703(i,n) are arranged in the row direction (the direction indicated by arrow R1 in the figure), and a group of a set of pixels 703(i,1) to a set of pixels 703(i,n) includes a set of pixels 703(i,j).

[0385] In addition, a group of pixels 703(i,1) to 703(i,n) are electrically connected to the conductive film G1(i). In addition, a group of pixels 703(i,1) to 703(i,n) are electrically connected to the conductive film TX(i).

[0386] Another group of a set of pixels 703(1,j) through a set of pixels 703(m,j) are arranged in a column direction (the direction indicated by the arrow C1 in the figure) that intersects the row direction, and the other group of a set of pixels 703(1,j) through a set of pixels 703(m,j) includes a set of pixels 703(i,j).

[0387] Another group of a set of pixels 703(1,j) through 703(m,j) is electrically connected to the conductive film S1g(j). Another group of a set of pixels 703(1,j) through 703(m,j) is electrically connected to the conductive film WX(j).

[0388] This makes it possible to supply image information to a plurality of pixels, or to obtain imaging information from a plurality of pixels, thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0389] <<Configuration Example 2 of Area 231>> Region 231 has a group of 500 or more pixels per inch. Also, region 231 has a group of 1000 or more pixels per inch, preferably 5000 or more pixels per inch, and more preferably 10000 or more pixels per inch. This can reduce, for example, the screen door effect. The group of pixels includes pixel 703(i,j).

[0390] <<Configuration Example 3 of Area 231>> The region 231 includes a plurality of pixels arranged in a matrix. For example, the region 231 includes 7600 or more pixels in the row direction, and the region 231 includes 4300 or more pixels in the column direction. Specifically, the region 231 includes 7680 pixels in the row direction, and 4320 pixels in the column direction.

[0391] This makes it possible to display a high-definition image, thereby providing a novel functional panel that is highly convenient and reliable.

[0392] <Configuration example 2 of function panel 700> Moreover, the functional panel 700 according to one embodiment of the present invention includes a group of sampling circuits SC, a multiplexer MUX, an amplifier circuit AMP, and an analog-to-digital conversion circuit ADC (see FIG. 14A). The group of sampling circuits SC includes a sampling circuit SC(j).

[0393] This allows a sampling circuit SC(j) to be provided for each conductive film WX(j). A differential signal of the pixel circuit 530S(i,j) can be acquired for each conductive film WX(j). Alternatively, the operating frequency of the sampling circuit SC(j) can be suppressed. Alternatively, noise can be reduced. As a result, a novel functional panel with excellent convenience and reliability can be provided.

[0394] <<Example of multiplexer MUX configuration>> The multiplexer MUX has a function of selecting one of the sampling circuits from a group of sampling circuits to acquire an imaging signal. For example, the multiplexer MUX selects the sampling circuit SC(j) to acquire an imaging signal.

[0395] Specifically, the multiplexer MUX is electrically connected to the sampling circuits SC(1) to SC(9) and selects one of them to acquire an imaging signal (see FIG. 14B). For example, the multiplexer MUX is electrically connected to the third terminal OUT(9) of the sampling circuit SC(9).

[0396] Moreover, the multiplexer MUX is electrically connected to the amplifier circuit AMP and has a function of supplying the acquired image signal.

[0397] This makes it possible to select a predetermined pixel from a plurality of pixels arranged in the row direction. Or, imaging information can be acquired from a predetermined pixel. Or, by using a plurality of multiplexers, the number of imaging signals acquired simultaneously can be reduced. Or, an analog-to-digital conversion circuit ADC having a smaller number of input channels compared to the number of pixels arranged in the row direction can be used. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0398] Example of amplifier circuit AMP configuration The amplifier circuit AMP can amplify the image signal and supply it to the analog-to-digital conversion circuit ADC.

[0399] The functional layer 520 includes a multiplexer MUX and an amplifier circuit AMP.

[0400] This makes it possible to form a semiconductor film used in the multiplexer MUX and the amplifier circuit AMP in the process of forming a semiconductor film used in the pixel circuit 530G(i,j), for example. Alternatively, the manufacturing process of the functional panel can be simplified. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0401] Example of analog-to-digital conversion circuit ADC configuration The analog-to-digital conversion circuit ADC has a function of converting an analog image signal into a digital signal, thereby making it possible to suppress degradation of the image signal caused by transmission.

[0402] <Configuration example 3 of function panel 700> Moreover, a functional panel 700 according to an embodiment of the present invention includes a driving circuit GD, a driving circuit RD, and a set of pixels 703(i,j). The driving circuit GD has a function of supplying a first selection signal, and the driving circuit RD has a function of supplying a fourth selection signal and a fifth selection signal.

[0403] <<Configuration example 1 of pixel 703(i,j)>> A set of pixels 703(i,j) is supplied with a fourth selection signal and a fifth selection signal during a period when the first selection signal is not being supplied (see FIG. 15). For example, the period from the end of a "write" operation to the start of the next "write" operation is a period during which the first selection signal is not being supplied. The pixel circuit 530S(i,j) obtains an imaging signal based on the fourth selection signal and supplies an imaging signal based on the fifth selection signal.

[0404] For example, the conductive film G1(i) can be used to supply a first selection signal, the conductive film TX(i) can be used to supply a fourth selection signal, and the conductive film SE(i) can be used to supply a fifth selection signal (see FIG. 7).

[0405] Moreover, the operation of supplying the fourth selection signal and causing the pixel circuit 530S(i,j) to acquire an imaging signal can be called "imaging" (see FIG. 15). Moreover, the operation of reading out an imaging signal from the pixel circuit 530S(i,j) can be called "reading out". Moreover, the operation of supplying a predetermined voltage to the element 550S(i,j) can be called "initialization", the operation of exposing the element 550S(i,j) to light for a predetermined period after initialization can be called "exposure", and the operation of reflecting the voltage changed by exposure to the pixel circuit 530S(i,j) can be called "transfer". Moreover, SRS in the figure corresponds to the operation of supplying a reference signal used in the correlated double sampling method, and "output" corresponds to the operation of supplying an imaging signal.

[0406] For example, one frame of image information can be written in 16.7 ms. Specifically, it can operate at a frame rate of 60 Hz. Note that an image signal can be written to the pixel circuit 530G(i,j) in 15.2 μs.

[0407] For example, one frame of image information can be held for a period corresponding to 16 frames, or one frame of imaging information can be captured and read out for a period corresponding to 16 frames.

[0408] Specifically, it can be initialized in 15 μs, exposed in the range of 1 ms to 5 ms, and transferred in 150 μs, or read out in 250 ms.

[0409] This allows imaging during a period when the first selection signal is not being supplied. Or, noise during imaging can be suppressed. Or, imaging signals can be read during a period when the first selection signal is not being supplied. Or, noise during reading can be suppressed. As a result, a novel functional panel that is excellent in convenience, usefulness, and reliability can be provided.

[0410] Configuration example 2 of pixel 703(i,j) The pixel 703(i,j) is supplied with the fourth selection signal during a period in which the pixel circuit 530G(i,j) holds one image signal. For example, during a period in which the pixel circuit 530G(i,j) holds one image signal, the pixel 703(i,j) can emit light based on the image signal using the element 550G(i,j) (see FIG. 15). Alternatively, after the pixel circuit 530G(i,j) acquires one image signal based on the first selection signal, the pixel circuit 530S(i,j) is supplied with the fourth selection signal during the period in which the pixel circuit 530G(i,j) is supplied with the first selection signal again.

[0411] This allows the intensity of light emitted by the element 550G(i,j) to be controlled using the image signal. Alternatively, the subject can be irradiated with light of controlled intensity. Alternatively, the subject can be imaged using the element 550S(i,j). Alternatively, the subject can be imaged using the element 550S(i,j) while controlling the intensity of the irradiated light. Alternatively, the effect on the image signal caused by the change of the signal held by the pixel circuit 530G(i,j) from one image signal to another image signal can be eliminated. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0412] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0413] (Embodiment 7) In this embodiment, a structure of a display device according to one embodiment of the present invention will be described with reference to drawings.

[0414] FIG. 16A is a block diagram of a display device of one embodiment of the present invention, and FIGS. 16B to 16D are perspective views illustrating the appearance of the display device of one embodiment of the present invention.

[0415] <Example of display device configuration> The display device described in this embodiment has a control unit 238 and a functional panel 700 (see FIG. 16A).

[0416] Configuration example 1 of the control unit 238 The control unit 238 is supplied with image information VI and control information CI, which may be, for example, a clock signal or a timing signal.

[0417] The control unit 238 generates information based on the image information VI, and generates a control signal based on the control information CI, and also provides the information and the control signal.

[0418] For example, the information includes a gradation of 8 bits or more, preferably 12 bits or more. Also, for example, a clock signal or a start pulse of a shift register used in a driving circuit can be used as a control signal.

[0419] <<Configuration Example 2 of the Control Unit 238>> For example, the decompression circuit 234 and the image processing circuit 235 can be used in the control unit 238 .

[0420] 《Stretching circuit 234》 The decompression circuit 234 has a function of decompressing the image information VI that is supplied in a compressed state. The decompression circuit 234 has a storage unit. The storage unit has a function of storing, for example, the decompressed image information.

[0421] "Image processing circuit 235" The image processing circuit 235 includes, for example, a storage area. The storage area has a function of storing information included in the image information VI, for example.

[0422] The image processing circuit 235 has, for example, a function of correcting the image information VI based on a predetermined characteristic curve to generate information, and a function of supplying the information.

[0423] <<Configuration example 1 of function panel 700>> Information and control signals are supplied to the functional panel 700. For example, the functional panel 700 described in any one of the first to sixth embodiments can be used.

[0424] <<Configuration Example 3 of Pixel 703(i,j)>> Pixel 703(i,j) is displayed based on the information.

[0425] This allows the image information VI to be displayed using the element 550G(i,j). As a result, a novel display device with excellent convenience, usefulness, or reliability can be provided. Alternatively, for example, an information device terminal (see FIG. 16B), a video display system (see FIG. 16C), or a computer (see FIG. 16D) can be provided.

[0426] <<Configuration example 2 of function panel 700>> For example, the functional panel 700 includes a driving circuit and a control circuit.

[0427] <Drive circuit> The drive circuits operate based on control signals, which can be used to synchronize the operation of multiple drive circuits (see FIG. 16A).

[0428] For example, the driving circuit GD can be used in the functional panel 700. The driving circuit GD is supplied with a control signal and has a function of supplying a first selection signal.

[0429] Also, for example, the driving circuit SD can be used in the functional panel 700. The driving circuit SD is supplied with control signals and information and can supply image signals.

[0430] Also, for example, the driver circuit RD can be used in the functional panel 700. The driver circuit RD is supplied with a control signal and can supply the third to fifth selection signals.

[0431] Also, for example, a readout circuit RC can be used in the functional panel 700. The readout circuit RC is supplied with a control signal and can read out an image signal using, for example, a correlated double sampling method.

[0432] Control Circuit The control circuit has a function of generating and supplying a control signal, which may be, for example, a clock signal or a timing signal.

[0433] Specifically, a control circuit formed on a rigid substrate can be used for the functional panel, or the control circuit formed on the rigid substrate can be electrically connected to the control unit 238 using a flexible printed circuit board.

[0434] For example, the control circuit can be the timing controller 233. Also, a control circuit 243 can be used to synchronize the operation of the drive circuit RD and the read circuit RC.

[0435] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0436] (Embodiment 8) In this embodiment, a structure of an input / output device of one embodiment of the present invention will be described with reference to drawings.

[0437] FIG. 17 is a block diagram illustrating a configuration of an input / output device of one embodiment of the present invention.

[0438] <Example 1 of I / O device configuration> The input / output device described in this embodiment includes an input unit 240 and a display unit 230 (see FIG. 17).

[0439] Configuration Example 1 of Display Unit 230 The display unit 230 includes a functional panel 700. For example, the functional panel 700 described in any one of the first to sixth embodiments can be used for the display unit 230. Note that a configuration having the input unit 240 and the display unit 230 can be referred to as a functional panel 700TP.

[0440] Configuration example 1 of the input unit 240 The input unit 240 has a detection area 241. The input unit 240 detects an object approaching the detection area 241.

[0441] Sensing region 241 comprises the area that overlaps pixel 703(i,j).

[0442] This makes it possible to detect an object approaching an area overlapping with the display unit 230 while displaying image information using the display unit 230. Alternatively, position information can be input using a finger or the like that is brought close to the display unit 230 as a pointer. Alternatively, position information can be associated with image information displayed on the display unit 230. As a result, it is possible to provide a novel input / output device that is highly convenient, useful, and reliable.

[0443] Configuration example 1 of detection area 241 The sensing area 241 may, for example, include one or more detectors.

[0444] The detection region 241 has a group of detectors 802(g,1) through 802(g,q) and another group of detectors 802(1,h) through 802(p,h), where g is an integer between 1 and p, h is an integer between 1 and q, and p and q are integers greater than or equal to 1.

[0445] A group of detectors 802(g,1) to 802(g,q) including a detector 802(g,h) are arranged in the row direction (the direction indicated by the arrow R2 in the figure) and are electrically connected to the wiring CL(g). Note that the direction indicated by the arrow R2 may be the same as the direction indicated by the arrow R1, or may be different.

[0446] In addition, another group of detectors 802(1,h) to 802(p,h), including detector 802(g,h), are arranged in a column direction (the direction indicated by arrow C2 in the figure) that intersects with the row direction, and are electrically connected to wiring ML(h).

[0447] Detector The detector has a function of detecting a nearby pointer. For example, a finger or a stylus pen can be used as the pointer. For example, a metal piece or a coil can be used as the stylus pen.

[0448] Specifically, a capacitance type proximity sensor, an electromagnetic induction type proximity sensor, an optical type proximity sensor, a resistive film type proximity sensor, or the like can be used as the detector.

[0449] Furthermore, detectors of multiple types can be used in combination. For example, a detector for detecting a finger and a detector for detecting a stylus pen can be used in combination.

[0450] This makes it possible to determine the type of pointer. Alternatively, different commands can be associated with the detection information based on the determined type of pointer. Specifically, if it is determined that a finger is used as the pointer, the detection information can be associated with a gesture. Alternatively, if it is determined that a stylus pen is used as the pointer, the detection information can be associated with a drawing process.

[0451] Specifically, a finger can be detected using a capacitance type, a pressure sensitive type, or an optical type proximity sensor, or a stylus pen can be detected using an electromagnetic induction type or an optical type proximity sensor.

[0452] Configuration example 2 of input unit 240 The input section 240 comprises an oscillator circuit OSC and a detection circuit DC (see FIG. 17).

[0453] The oscillator circuit OSC supplies a search signal to the detector 802(g,h). For example, a square wave, a sawtooth wave, a triangular wave, a sine wave, etc. can be used as the search signal.

[0454] The detector 802(g,h) generates and provides a detection signal that varies based on the distance to the pointer proximate to the detector 802(g,h) and the probe signal.

[0455] The detection circuit DC provides input information based on the detection signal.

[0456] This makes it possible to detect the distance from the approaching pointer to the detection area 241. Alternatively, it makes it possible to detect the position within the detection area 241 to which the pointer is closest.

[0457] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0458] (Embodiment 9) In this embodiment, a configuration of a data processing device according to one embodiment of the present invention will be described with reference to drawings.

[0459] 18A is a block diagram illustrating a configuration of an information processing device according to one embodiment of the present invention, and FIG 18B and FIG 18C are projection views illustrating an example of the external appearance of the information processing device.

[0460] Fig. 19 is a flowchart illustrating a program according to an embodiment of the present invention, Fig. 19A is a flowchart illustrating main processing of the program according to an embodiment of the present invention, and Fig. 19B is a flowchart illustrating interrupt processing.

[0461] Fig. 20 is a diagram illustrating a program according to one embodiment of the present invention. Fig. 20A is a flowchart illustrating interrupt processing of the program according to one embodiment of the present invention. Fig. 20B is a schematic diagram illustrating the operation of an information processing device according to one embodiment of the present invention, and Fig. 20C is a timing chart illustrating the operation of the information processing device according to one embodiment of the present invention.

[0462] Fig. 21 is a diagram for explaining a program according to one aspect of the present invention. Fig. 21A is a flow chart for explaining an interrupt process different from the interrupt process shown in Fig. 19B. Fig. 21B is a schematic diagram for explaining the operation of the program shown in Fig. 21A, and Fig. 21C is a schematic diagram of a photographed fingerprint.

[0463] Fig. 22 is a diagram illustrating a program according to one embodiment of the present invention. Fig. 22A is a flowchart illustrating an interrupt process different from the interrupt process illustrated in Fig. 19B. Fig. 22B to Fig. 22D are schematic diagrams illustrating the operation of the program illustrated in Fig. 22A.

[0464] <Configuration example 1 of information processing device> The information processing device described in this embodiment includes an arithmetic unit 210 and an input / output unit 220 (see FIG. 18A). The input / output unit 220 is electrically connected to the arithmetic unit 210. The information processing device 200 may include a housing (see FIGS. 18B and 18C).

[0465] Configuration Example 1 of the Calculation Device 210 The arithmetic unit 210 is supplied with input information II or sensed information DS. The arithmetic unit 210 generates control information CI and image information VI based on the input information II or sensed information DS, and supplies the control information CI and image information VI.

[0466] The arithmetic device 210 includes a calculation unit 211 and a storage unit 212. The arithmetic device 210 also includes a transmission path 214 and an input / output interface 215.

[0467] The transmission path 214 is electrically connected to the calculation unit 211 , the storage unit 212 , and the input / output interface 215 .

[0468] 《Calculation section 211》 The calculation unit 211 has a function of executing a program, for example.

[0469] 《Storage section 212》 The storage unit 212 has a function of storing, for example, the program executed by the calculation unit 211, initial information, setting information, images, and the like.

[0470] Specifically, a hard disk, a flash memory, a memory including a transistor including an oxide semiconductor, or the like can be used.

[0471] Input / output interface 215, transmission path 214 The input / output interface 215 includes a terminal or wiring and has a function of supplying information and receiving information. For example, the input / output interface 215 can be electrically connected to the transmission path 214. The input / output interface 215 can also be electrically connected to the input / output device 220.

[0472] The transmission path 214 includes wiring and has a function of supplying information and receiving information. For example, the transmission path 214 can be electrically connected to the input / output interface 215. The transmission path 214 can also be electrically connected to the calculation unit 211, the storage unit 212, or the input / output interface 215.

[0473] Example of the configuration of the input / output device 220 The input / output device 220 supplies input information II and sensed information DS. The input / output device 220 is supplied with control information CI and image information VI (see FIG. 18A).

[0474] For example, keyboard scan code, position information, button operation information, audio information, image information, etc. can be used as the input information II. Alternatively, for example, illuminance information, posture information, acceleration information, direction information, pressure information, temperature information, humidity information, etc. of the environment in which the information processing device 200 is used can be used as the detection information DS.

[0475] For example, a signal for controlling the luminance, saturation, or hue of the image information VI may be used as the control information CI, or a signal for changing the display of a part of the image information VI may be used as the control information CI.

[0476] The input / output device 220 includes a display unit 230, an input unit 240, and a detection unit 250. For example, the input / output device described in the eighth embodiment can be used for the input / output device 220. The input / output device 220 can also include a communication unit 290.

[0477] Configuration example of display unit 230 The display unit 230 displays the image information VI based on the control information CI. For example, the display device described in the seventh embodiment can be used for the display unit 230.

[0478] Example of configuration of input unit 240 The input unit 240 generates input information II. For example, the input unit 240 has a function of supplying position information P1.

[0479] For example, a human interface or the like can be used for the input unit 240 (see FIG. 18A). Specifically, a keyboard, a mouse, a touch sensor, a microphone, a camera, or the like can be used for the input unit 240.

[0480] It is also possible to use a touch sensor having an area overlapping with the display unit 230. Note that an input / output device including the display unit 230 and a touch sensor having an area overlapping with the display unit 230 can be called a touch panel or a touch screen.

[0481] For example, a user can perform various gestures (such as tapping, dragging, swiping, or pinching in) using a finger that touches the touch panel as a pointer.

[0482] For example, the computing device 210 can analyze information such as the position or trajectory of a finger touching the touch panel, and when the analysis result satisfies a predetermined condition, it can determine that a predetermined gesture has been provided. This allows the user to provide a predetermined operation command that is previously associated with a predetermined gesture by using the gesture.

[0483] As one example, a user can provide a "scroll command" to change the displayed position of image information by using a gesture of moving a finger in contact with the touch panel along the touch panel.

[0484] The user can also provide a "drag command" to pull out and display the navigation panel NP at the edge of the area 231 by using a gesture of moving a finger in contact with the edge of the area 231 (see FIG. 18C). The user can also provide a "leaf-through command" to flip through the index image IND, parts of other pages, or thumbnail images TN of other pages in a predetermined order on the navigation panel NP by using a gesture of moving the position where the finger is pressed firmly, or by using the pressure of the finger. This allows the pages of an electronic book to be turned as if flipping through the pages of a paper book. Or, the user can search for a predetermined page by relying on the thumbnail image TN or the index image IND.

[0485] Example of configuration of detection unit 250 The detection unit 250 generates detection information DS. For example, the detection unit 250 has a function of detecting the illuminance of the environment in which the information processing device 200 is used, and a function of supplying the illuminance information.

[0486] The detection unit 250 has a function of detecting the surrounding state and supplying detection information, specifically, illuminance information, attitude information, acceleration information, direction information, pressure information, temperature information, humidity information, and the like.

[0487] For example, the detection unit 250 may use a photodetector, a posture detector, an acceleration sensor, a direction sensor, a GPS (Global Positioning System) signal receiving circuit, a pressure-sensitive switch, a pressure sensor, a temperature sensor, a humidity sensor, a camera, or the like.

[0488] 《Communication Section 290》 The communication unit 290 has a function of supplying information to the network and acquiring information from the network.

[0489] 《Case》 The housing has a function of housing the input / output device 220 or the arithmetic device 210. Alternatively, the housing has a function of supporting the display unit 230 or the arithmetic device 210.

[0490] This makes it possible to generate control information CI based on input information II or detection information DS. Or, it is possible to display image information VI based on input information II or detection information DS. Or, it is possible for the information processing device to operate by grasping the intensity of light received by the housing of the information processing device in the environment in which the information processing device is used. Or, it is possible for the user of the information processing device to select the display method. As a result, it is possible to provide a novel information processing device that is excellent in convenience, usefulness, and reliability.

[0491] In addition, these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration. For example, a touch panel in which a touch sensor is superimposed on a display panel is both a display unit and an input unit.

[0492] Configuration Example 2 of the Calculation Device 210 The computing device 210 includes an artificial intelligence unit 213 (see FIG. 18A).

[0493] The artificial intelligence unit 213 is supplied with the input information II or the sensed information DS, and infers the control information CI based on the input information II or the sensed information DS. The artificial intelligence unit 213 also supplies the control information CI.

[0494] This makes it possible to generate control information CI that is displayed in a way that is perceived as suitable. Or, it is possible to display control information CI that is displayed in a way that is perceived as suitable. Or, it is possible to generate control information CI that is displayed in a way that is perceived as comfortable. Or, it is possible to display control information CI that is displayed in a way that is perceived as comfortable. As a result, it is possible to provide a novel information processing device that is excellent in convenience, usefulness, and reliability.

[0495] [Natural language processing for input information II] Specifically, the artificial intelligence unit 213 can perform natural language processing on the input information II and extract one feature from the entire input information II. For example, the artificial intelligence unit 213 can infer emotions and the like contained in the input information II and make them a feature. It can also infer a color, pattern, font, and the like that is empirically felt to be suitable for the feature. The artificial intelligence unit 213 can also generate information that specifies the color, pattern, or font of characters, and information that specifies the color or pattern of the background, and use the information in the control information CI.

[0496] Specifically, the artificial intelligence unit 213 can extract some words contained in the input information II by natural language processing of the input information II. For example, the artificial intelligence unit 213 can extract grammatical errors, factual errors, or expressions containing emotions. In addition, the artificial intelligence unit 213 can generate control information CI that displays the extracted part in a color, pattern, font, or the like different from the other parts.

[0497] [Image processing for input information II] Specifically, the artificial intelligence unit 213 can perform image processing on the input information II and extract one feature from the input information II. For example, the artificial intelligence unit 213 can infer the year in which the input information II was photographed, whether indoors or outdoors, day or night, and the like, and use these as features. In addition, the artificial intelligence unit 213 can infer a color tone that is empirically felt to be suitable for the feature, and generate control information CI for using the color tone for display. Specifically, information specifying a color (for example, full color, black and white, or brown, etc.) used to express shading can be used in the control information CI.

[0498] Specifically, the artificial intelligence unit 213 can extract a part of an image included in the input information II by performing image processing on the input information II. For example, the artificial intelligence unit 213 can generate control information CI that displays a boundary between one part of the extracted image and another part. Specifically, the artificial intelligence unit 213 can generate control information CI that displays a rectangle that surrounds a part of the extracted image.

[0499] [Inference using detection information DS] Specifically, the artificial intelligence unit 213 can make inferences using the detection information DS, or can generate control information CI based on the inferences so that the user of the information processing device 200 feels comfortable.

[0500] Specifically, the artificial intelligence unit 213 can generate control information CI for adjusting the brightness of the display so that the brightness of the display is felt to be comfortable based on the illuminance of the environment, etc. Alternatively, the artificial intelligence unit 213 can generate control information CI for adjusting the volume so that the volume is felt to be comfortable based on the noise of the environment, etc.

[0501] Note that a clock signal or a timing signal supplied to the control unit 238 included in the display unit 230 can be used as the control information CI. Alternatively, a clock signal or a timing signal supplied to the control unit included in the input unit 240 can be used as the control information CI.

[0502] <Configuration example 2 of information processing device> Another configuration of the data processing device of one embodiment of the present invention will be described with reference to FIGS. 19A and 19B.

[0503] "program" A program according to one embodiment of the present invention has the following steps (see FIG. 19A).

[0504] [First step] In the first step, the settings are initialized (see FIG. 19A (S1)).

[0505] For example, predetermined image information to be displayed at the time of startup, a predetermined mode for displaying the image information, and information for specifying a predetermined display method for displaying the image information are obtained from the storage unit 212. Specifically, one still image information or other moving image information can be used as the predetermined image information. Also, the first mode or the second mode can be used as the predetermined mode.

[0506] [Second step] In the second step, interrupt processing is permitted (see FIG. 19A (S2)). Note that the arithmetic unit for which interrupt processing is permitted can perform the interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the results obtained from the interrupt processing in the main processing.

[0507] When the counter value is the initial value, the arithmetic unit may perform an interrupt process, and when returning from the interrupt process, the counter may be set to a value other than the initial value. This allows interrupt processing to be always performed after the program is started.

[0508] [Third step] In a third step, the image information is displayed using a predetermined mode or a predetermined display method selected in the first step or interrupt process (see FIG. 19A (S3)). Note that the predetermined mode specifies the mode in which the information is displayed, and the predetermined display method specifies the method in which the image information is displayed. Also, for example, it can be used for information that displays image information VI.

[0509] For example, one way of displaying the image information VI may be associated with a first mode, and another way of displaying the image information VI may be associated with a second mode, allowing the display method to be selected based on the selected mode.

[0510] First mode Specifically, a method of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, and performing display based on the selection signal can be associated with the first mode.

[0511] For example, if the selection signal is supplied at a frequency of 30 Hz or more, and preferably 60 Hz or more, the movement of the moving image can be displayed smoothly.

[0512] For example, by updating the image at a frequency of 30 Hz or more, preferably 60 Hz or more, an image that changes so as to smoothly follow the user's operation can be displayed on the information processing device 200 being operated by the user.

[0513] Second Mode Specifically, a method of supplying a selection signal to one scan line at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, and performing display based on the selection signal can be associated with the second mode.

[0514] Supplying the selection signal at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute can provide a display with reduced flicker or blinking, and can also reduce power consumption.

[0515] For example, when the information processing device 200 is used in a clock, the display can be updated once per second or once per minute.

[0516] Incidentally, for example, when a light-emitting element is used as a display element, the light-emitting element can be made to emit light in a pulsed manner to display image information. Specifically, the organic EL element can be made to emit light in a pulsed manner, and the afterglow can be used for display. Since the organic EL element has excellent frequency characteristics, it may be possible to shorten the time for driving the light-emitting element and reduce power consumption. Alternatively, since heat generation is suppressed, it may be possible to reduce deterioration of the light-emitting element. Furthermore, if the duty ratio is set to 20% or less, it is possible to reduce the afterimage included in the display.

[0517] [Fourth step] In the fourth step, if an end command is supplied (Yes), proceed to the fifth step; if an end command is not supplied (No), proceed to the third step (see FIG. 19A (S4)).

[0518] For example, the end command supplied in the interrupt process may be used for the judgment.

[0519] [5th ​​step] In the fifth step, the process ends (see FIG. 19A (S5)).

[0520] <<Interrupt Processing>> The interrupt process includes the following sixth to eighth steps (see FIG. 19B).

[0521] [Sixth step] In a sixth step, for example, the detection unit 250 detects the illuminance of the environment in which the information processing device 200 is used (see FIG. 19B (S6)). Note that instead of the illuminance of the environment, the color temperature or chromaticity of the ambient light may be detected.

[0522] [Seventh step] In the seventh step, a display method is determined based on the detected illuminance information (see FIG. 19B (S7)). For example, the brightness of the display is determined so as not to be too dark or too bright.

[0523] It should be noted that if the color temperature or chromaticity of the ambient light is detected in the sixth step, the color of the display may be adjusted.

[0524] [8th step] In the eighth step, the interrupt process ends (see FIG. 19B (S8)).

[0525] <Configuration example 3 of information processing device> Another configuration of the data processing device of one embodiment of the present invention will be described with reference to FIG.

[0526] Fig. 20A is a flowchart illustrating a program according to one embodiment of the present invention, which is a flowchart illustrating an interrupt process different from the interrupt process shown in Fig. 19B.

[0527] Note that the configuration example 3 of the information processing device differs from the interrupt processing described with reference to Fig. 19B in that the interrupt processing includes a step of changing the mode based on a supplied predetermined event. Here, the different parts will be described in detail, and the above description will be used for parts where a similar configuration can be used.

[0528] <<Interrupt Processing>> The interrupt process includes the following sixth to eighth steps (see FIG. 20A).

[0529] [Sixth step] In the sixth step, if the predetermined event is supplied (Yes), proceed to the seventh step, and if the predetermined event is not supplied (No), proceed to the eighth step (see FIG. 20A (U6)). For example, whether or not the predetermined event is supplied within a predetermined period of time can be used as a condition. Specifically, the predetermined period can be a period of 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less, but longer than 0 seconds.

[0530] [Seventh step] In the seventh step, the mode is changed (see FIG. 20A (U7)). Specifically, if the first mode has been selected, the second mode is selected, and if the second mode has been selected, the first mode is selected.

[0531] For example, the display mode can be changed for a part of the area of ​​the display unit 230. Specifically, the display mode can be changed for an area to which a selection signal is supplied by one of the drive circuits of the display unit 230 including the drive circuits GDA, GDB, and GDC (see FIG. 20B).

[0532] For example, when a predetermined event is supplied to the input unit 240 in an area overlapping with an area to which the drive circuit GDB supplies a selection signal, the display mode of the area to which the drive circuit GDB supplies a selection signal can be changed (see Figs. 20B and 20C). Specifically, the frequency of the selection signal supplied by the drive circuit GDB can be changed in response to a "tap" event supplied to the touch panel using a finger or the like.

[0533] The signal GCLK is a clock signal that controls the operation of the drive circuit GDB, and the signals PWC1 and PWC2 are pulse width control signals that control the operation of the drive circuit GDB. The drive circuit GDB supplies selection signals to the conductive films G2(m+1) to G2(2m) based on the signals GCLK, PWC1, and PWC2.

[0534] This allows, for example, the driver circuit GDB to supply a selection signal without the driver circuit GDA and the driver circuit GDC supplying a selection signal. Alternatively, the display of the area to which the driver circuit GDB supplies a selection signal can be updated without changing the display of the area to which the driver circuit GDA and the driver circuit GDC supply a selection signal. Alternatively, the power consumed by the driver circuit can be reduced.

[0535] [8th step] In the eighth step, the interrupt process is ended (see FIG. 20A (U8)). Note that the interrupt process may be repeatedly executed during the execution of the main process.

[0536] 《Specified Event》 For example, events such as "click" and "drag" provided using a pointing device such as a mouse, and events such as "tap," "drag," or "swipe" provided to a touch panel using a finger or the like as a pointer can be used.

[0537] Also, for example, the position of the slide bar pointed to by the pointer, the swipe speed, the drag speed, etc. can be used to provide arguments for commands associated with a given event.

[0538] For example, the information detected by the detection unit 250 can be compared with a preset threshold value, and the comparison result can be used for the event.

[0539] Specifically, a pressure-sensitive detector that comes into contact with a button or the like that is arranged so that it can be pressed into the housing can be used for the detection unit 250 .

[0540] Commands associated with specific events For example, the termination command may be associated with a certain event.

[0541] For example, a "page turn command" for switching the display from one image information to another can be associated with a specific event. In addition, an argument for determining the page turning speed used when executing the "page turn command" can be given using the specific event.

[0542] For example, a "scroll command" that moves the display position of a part of an image information and displays another part that is adjacent to the part can be associated with a specific event. Note that an argument that determines the speed at which the display is moved when the "scroll command" is executed can be given using the specific event.

[0543] For example, a command to set a display method or a command to generate image information can be associated with a specific event. An argument that determines the brightness of an image to be generated can be associated with a specific event. The argument that determines the brightness of an image to be generated can also be determined based on the brightness of the environment detected by the detection unit 250.

[0544] For example, a command to obtain information distributed using a push-type service using the communication unit 290 can be associated with a specific event.

[0545] The presence or absence of qualification to obtain information may be determined using location information detected by the detection unit 250. Specifically, it may be determined that the user is qualified to obtain information when the user is inside or in an area of ​​a specific classroom, school, conference room, company, building, etc. As a result, for example, educational materials distributed in a classroom of a school or university, etc., can be received and the information processing device 200 can be used for textbooks, etc. (see FIG. 18C). Or, materials distributed in a conference room of a company, etc. can be received and used for conference materials.

[0546] <Configuration example 4 of information processing device> Another configuration of the data processing device of one embodiment of the present invention will be described with reference to FIG.

[0547] Note that the configuration example 4 of the information processing device described with reference to Fig. 21A differs from the configuration example described with reference to Fig. 19B in the interrupt processing. Specifically, the interrupt processing includes a step of identifying an area based on a given event supplied, a step of generating an image, a step of displaying the image, and a step of capturing an image. Here, the different parts are described in detail, and the above description is used for parts that can use a similar configuration.

[0548] <<Interrupt Processing>> The interrupt process comprises a sixth step to an eleventh step (see FIG. 21A).

[0549] [Sixth step] In the sixth step, if the specified event is supplied (Yes), proceed to the seventh step, and if the specified event is not supplied (No), proceed to the eleventh step (see FIG. 21A (V6)).

[0550] For example, a predetermined event can be supplied using the detection unit 250. Specifically, a motion such as lifting the information processing device can be used as the predetermined event. For example, an angular acceleration sensor or an acceleration sensor can be used to detect the motion of the information processing device. Alternatively, a touch sensor can be used to detect contact with a finger or the like or the proximity of a subject.

[0551] [Seventh step] In the seventh step, the first region SH is identified (see FIG. 21A (V7)).

[0552] For example, a region in contact with or close to a subject such as a finger on the input / output device 220 of one embodiment of the present invention can be the first region SH. Alternatively, a region set in advance by a user or the like can be used as the first region SH.

[0553] Specifically, a finger THM or the like that is in contact with or in proximity to a functional panel of one embodiment of the present invention can be photographed using pixel 703(i,j), and the image can be processed to identify the first area SH (see FIG. 21B).

[0554] For example, a shadow created by the contact or proximity of a subject such as a finger THM blocking external light can be captured using pixel 703(i,j) of a functional panel according to one embodiment of the present invention, and the image can be processed to identify a first area SH.

[0555] Alternatively, pixel 703(i,j) of a functional panel according to one embodiment of the present invention can be used to irradiate light onto an object such as a finger THM that is in contact with or in close proximity, and the light reflected by the object can be captured using pixel 703(i,j), and the image can be processed to identify the first region SH.

[0556] Alternatively, a touch sensor can be used to identify an area touched by a subject such as a finger THM as the first area SH.

[0557] [8th step] In the eighth step, an image FI including a second region and a third region is generated based on the first region SH (see FIG. 21A (V8) and FIG. 21B). For example, the shape of the first region SH is used as the shape of the second region, and the region excluding the first region SH is used as the third region.

[0558] [9th step] In a ninth step, the image FI is displayed so that the second region overlaps the first region SH (see FIG. 21A (V9) and FIG. 21B).

[0559] For example, an image signal is generated from an image FI and supplied to the region 231, and light is emitted from the pixel 703(i,j). Alternatively, during a period in which a first selection signal is supplied to the conductive film G1(i), the generated image signal can be supplied to the conductive film S1g(j) and the image signal can be written to the pixel 703(i,j). Alternatively, the generated image signal can be supplied to the conductive film S1g(j) and the conductive film S2g(j) and an enhanced image signal can be written to the pixel 703(i,j). Alternatively, the enhanced image signal can be used to display an image with increased brightness.

[0560] This allows the image FI to be displayed superimposed on the area 231 touched by the subject such as a finger or the nearby first area SH. Alternatively, light can be irradiated onto the area touched by the subject such as a finger using pixel 703(i,j). Alternatively, illumination can be applied to the subject such as a finger THM that is in contact or in close proximity. Alternatively, a user or the like can be prompted to touch or close a subject such as a finger to a previously set area.

[0561] [10th step] In a tenth step, an image of a subject in contact with or close to the first area SH is captured while the image FI is being displayed (see FIG. 21A (V10) and FIG. 21B).

[0562] For example, an image of a finger THM or the like close to the area 231 is captured while irradiating the finger with light. Specifically, a fingerprint FP of the finger THM in contact with the area 231 can be captured (see FIG. 21C).

[0563] For example, the supply of the first selection signal can be stopped while an image is displayed on pixel 703(i,j). For example, an image can be captured using pixel 703(i,j) while the supply of the first selection signal to pixel circuit 530G(i,j) is stopped.

[0564] This allows an image of a subject such as a finger in contact or in close proximity to be captured while being illuminated. Or, an image can be captured during a period in which the first selection signal is not supplied. Or, noise during imaging can be suppressed. Or, a clear image of a fingerprint can be acquired. Or, an image that can be used for authenticating a user can be acquired. Or, a fingerprint of a finger touching the area 231 can be captured clearly no matter where in the area 231. As a result, a novel information processing device that is excellent in convenience, usefulness, and reliability can be provided.

[0565] [11th step] In the eleventh step, the interrupt process ends (see FIG. 21A (V11)).

[0566] <Configuration example 5 of information processing device> Another configuration of a data processing device of one embodiment of the present invention will be described with reference to FIG.

[0567] <<Interrupt Processing>> The interrupt process comprises the sixth to ninth steps (see FIG. 22A).

[0568] [Sixth step] In the sixth step, if the specified event is supplied (Yes), proceed to the seventh step, and if the specified event is not supplied (No), proceed to the ninth step (see FIG. 22A (W6)).

[0569] For example, the subject 30 is placed at a predetermined position on the information processing device 200, and a predetermined event can be supplied using the input unit 240 (see FIG. 22B). Specifically, contact or proximity of a finger or the like can be detected using a touch sensor in the area 231(1) and used for the predetermined event. For example, a touch sensor placed over a location where an image associated with interrupt processing is displayed can be used. Specifically, an image associated with interrupt processing can be displayed in the area 231(1), and the input unit 240 placed over the area 231(1) can be used.

[0570] [Seventh step] In the seventh step, imaging is performed using area 231(1) (see FIG. 22A(W7)).

[0571] For example, a still image is captured when subject 30 approaches or comes into contact with region 231 (see FIG. 22C). Specifically, a still image is captured when the intensity of external light incident on region 231 becomes smaller than a predetermined value. Alternatively, a still image is captured when no change exceeding a predetermined size is observed in the image captured by region 231 for a predetermined period of time. Alternatively, a still image is captured after the housing of information processing device 200 is closed.

[0572] [8th step] In the eighth step, the area 231(1) is used for display (see FIG. 22A(W8)).

[0573] For example, the still image captured in the seventh step is displayed in area 231 (see FIG. 22D).

[0574] [9th step] In the ninth step, the interrupt process ends (see FIG. 22A (W9)).

[0575] This allows a subject, such as a finger, in contact with or close to the object to be imaged while being illuminated. Alternatively, a clear image with reduced distortion can be obtained. Alternatively, information published in a printed matter can be copied into electronic data. As a result, a novel information processing device that is highly convenient, useful, and reliable can be provided.

[0576] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0577] (Embodiment 10) In this embodiment, a configuration of a data processing device according to one embodiment of the present invention will be described with reference to drawings.

[0578] 23 to 25 are diagrams illustrating a configuration of an information processing device of one embodiment of the present invention. Fig. 23A is a block diagram of the information processing device, and Figs. 23B to 23E are perspective views illustrating the configuration of the information processing device. Figs. 24A to 24E are perspective views illustrating the configuration of the information processing device. Figs. 25A and 25B are perspective views illustrating the configuration of the information processing device.

[0579] <Information processing device> An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 23A).

[0580] The arithmetic unit 5210 has a function of receiving operation information and a function of supplying image information based on the operation information.

[0581] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, and a communication unit 5290, a function of supplying operation information, and a function of being supplied with image information. The input / output device 5220 also includes a function of supplying detection information, a function of supplying communication information, and a function of being supplied with communication information.

[0582] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on an operation by a user of the information processing device 5200B.

[0583] Specifically, the input unit 5240 can use a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye-gaze input device, a posture detection device, or the like.

[0584] The display portion 5230 has a function of displaying a display panel and displaying image information. For example, the display panel described in any one of Embodiments 1 to 6 can be used as the display portion 5230.

[0585] The detection unit 5250 has a function of supplying detection information, for example, a function of detecting the surrounding environment in which the information processing device is used and supplying the detected information.

[0586] Specifically, the detection unit 5250 can include an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like.

[0587] The communication unit 5290 has a function of receiving and supplying communication information. For example, it has a function of connecting to other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-distance wireless communication.

[0588] "Configuration example 1 of information processing device" For example, an outer shape that conforms to a cylindrical pillar or the like can be applied to the display unit 5230 (see FIG. 23B). Also, it has a function of changing the display method according to the illuminance of the usage environment. Also, it has a function of detecting the presence of a person and changing the display content. This allows it to be installed on a pillar of a building, for example. Or, it can display advertisements or guidance, or it can be used for digital signage, etc.

[0589] "Configuration example 2 of information processing device" For example, it has a function of generating image information based on the trajectory of a pointer used by a user (see FIG. 23C). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to be used in one display area. Alternatively, multiple display panels can be arranged to be used as a multi-screen. This allows the display to be used, for example, in an electronic blackboard, electronic bulletin board, electronic signboard, etc.

[0590] "Configuration example 3 of information processing device" Information can be received from another device and displayed on the display unit 5230 (see FIG. 23D). Alternatively, several options can be displayed. Alternatively, the user can select several from the options and send a reply to the sender of the information. Alternatively, for example, the smartwatch has a function for changing the display method according to the illuminance of the usage environment. This can reduce the power consumption of the smartwatch, for example. Alternatively, for example, an image can be displayed on the smartwatch so that the smartwatch can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0591] Configuration Example 4 of Information Processing Device The display unit 5230 has, for example, a curved surface that curves gently along the side of the housing (see FIG. 23E). Alternatively, the display unit 5230 has a display panel, and the display panel has a function of displaying on, for example, the front, side, top, and back. This allows information to be displayed not only on the front of the mobile phone, but also on the side, top, and back.

[0592] <<Configuration Example 5 of Information Processing Device>> For example, information can be received from the Internet and displayed on the display unit 5230 (see FIG. 24A). A created message can be confirmed on the display unit 5230. A created message can be transmitted to another device. For example, a function is provided for changing the display method according to the illuminance of the usage environment. This makes it possible to reduce the power consumption of the smartphone. For example, an image can be displayed on the smartphone so that the smartphone can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0593] "Configuration Example 6 of Information Processing Device" A remote controller can be used as the input unit 5240 (see FIG. 24B). Alternatively, for example, information can be received from a broadcast station or the Internet and displayed on the display unit 5230. Alternatively, a user can be photographed using the detection unit 5250. Alternatively, a video of the user can be transmitted. Alternatively, a viewing history of the user can be acquired and provided to a cloud service. Alternatively, recommendation information can be acquired from a cloud service and displayed on the display unit 5230. Alternatively, a program or video can be displayed based on the recommendation information. Alternatively, for example, a function of changing the display method according to the illuminance of the usage environment is provided. This allows the video to be displayed on the television system so that it can be used suitably even when strong external light shines into the room on a sunny day.

[0594] 《Configuration Example 7 of Information Processing Device》 For example, learning materials can be received from the Internet and displayed on the display unit 5230 (see FIG. 24C). Or, a report can be input using the input unit 5240 and sent to the Internet. Or, a correction result or evaluation of the report can be obtained from a cloud service and displayed on the display unit 5230. Or, suitable learning materials can be selected and displayed based on the evaluation.

[0595] For example, an image signal can be received from another information processing device and displayed on the display unit 5230. Alternatively, the display unit 5230 can be used as a sub-display by leaning it against a stand or the like. This allows images to be displayed on the tablet computer so that it can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0596] "Configuration Example 8 of Information Processing Device" The information processing device includes, for example, a plurality of display units 5230 (see FIG. 24D). For example, an image can be captured by the detection unit 5250 while being displayed on the display unit 5230. Alternatively, the captured image can be displayed on the detection unit. Alternatively, the captured image can be decorated using the input unit 5240. Alternatively, a message can be attached to the captured image. Alternatively, the captured image can be transmitted to the Internet. Alternatively, the device includes a function of changing the capture conditions according to the illuminance of the usage environment. This allows the subject to be displayed on the digital camera so that it can be viewed favorably even in an environment with strong external light, such as outdoors on a clear day.

[0597] "Configuration Example 9 of Information Processing Device" For example, the other information processing device can be used as a slave and the information processing device of this embodiment can be used as a master to control the other information processing device (see FIG. 24E). Or, for example, a part of the image information can be displayed on the display unit 5230, and another part of the image information can be displayed on the display unit of the other information processing device. An image signal can be supplied to the other information processing device. Or, information to be written can be obtained from an input unit of the other information processing device using the communication unit 5290. This allows, for example, a wide display area to be utilized using a portable personal computer.

[0598] "Configuration Example 10 of Information Processing Device" The information processing device includes, for example, a detection unit 5250 that detects acceleration or orientation (see FIG. 25A). Alternatively, the detection unit 5250 can supply information related to the position of the user or the direction in which the user is facing. Alternatively, the information processing device can generate image information for the right eye and image information for the left eye based on the position of the user or the direction in which the user is facing. Alternatively, the display unit 5230 includes a display area for the right eye and a display area for the left eye. This allows, for example, an image of a virtual reality space that provides an immersive feeling to be displayed on a goggle-type information processing device.

[0599] "Configuration Example 11 of Information Processing Device" The information processing device includes, for example, an imaging device, a detection unit 5250 that detects acceleration or orientation (see FIG. 25B). Alternatively, the detection unit 5250 can supply information related to the user's position or the direction in which the user is facing. Alternatively, the information processing device can generate image information based on the user's position or the direction in which the user is facing. This makes it possible to display, for example, information attached to a real landscape. Alternatively, an image of an augmented reality space can be displayed on a glasses-type information processing device.

[0600] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. EXAMPLES

[0601] In this example, the structure of a manufactured functional panel according to one embodiment of the present invention will be described with reference to FIGS. 2C, 2D, and 27A.

[0602] FIG. 27A is a transmission electron microscope photograph illustrating a cross section of a functional panel according to one embodiment of the present invention, and corresponds to a portion of FIG. 2C.

[0603] <Function panel configuration example 1> The manufactured functional panel has element 550R(i,j), reflective film 554R(i,j), and insulating film 528 (see FIGS. 27A and 28A).

[0604] <Element configuration example> Element 550R(i,j) includes an electrode 551R(i,j), an electrode 552, and a layer 553 including a light-emitting material.

[0605] The layer 553 containing a light-emitting material has a region sandwiched between the electrode 551R(i,j) and the electrode 552. A film containing indium, tin, silicon, and oxygen is used for the electrode 551R(i,j), and a stacked film is used for the electrode 552. The stacked film is a film in which a film containing indium, tin, and oxygen and a film containing silver and magnesium are stacked in this order.

[0606] The electrode 551R(i,j) is light-transmitting and has a thickness T1. Specifically, the thickness T1 is 110 nm.

[0607] <<Example of the configuration of the reflective film 554R(i,j)>> The reflective film 554R(i,j) has a region where the electrode 551R(i,j) is sandwiched between the layer 553 containing a light-emitting material and the reflective film 554R(i,j) has a thickness T2. Specifically, the thickness T2 was 160 nm. A laminated film was used as the reflective film, and the laminated film was a film in which a titanium film, an aluminum film, and a titanium film were laminated in this order.

[0608] <<Example of the configuration of the insulating film 528>> The insulating film 528 has a thickness T3. Specifically, the thickness T3 is 170 nm. The insulating film 528 is made of a film containing silicon, oxygen, and nitrogen.

[0609] The opening 528h(1) overlaps with the electrode 551R(i,j), and the insulating film 528 has a stepped cross-sectional shape SCT1.

[0610] The stepped cross-sectional shape SCT1 has a step 528D(1). Specifically, the step 528D(1) is 330 nm. The step 528D(1) is equal to or greater than the sum of the thickness T1 and the thickness T2.

[0611] As a result, a thin portion of the layer 553 containing a light-emitting material could be formed on the step 528D(1) surrounding the opening. Specifically, a portion having a thickness of 64.1 nm could be formed on the layer 553 containing a light-emitting material. The layer 553 containing a light-emitting material had a thickness of 176.6 nm at the flat portion. The electrode 552 had a thickness of 70 nm at the flat portion and a thickness of 39.5 nm at the thinnest portion. Alternatively, the current flowing outside the opening 528h(1) along the spread of the layer 553 containing a light-emitting material could be suppressed. Alternatively, the light-emitting region could be concentrated in the region overlapping with the opening 528h(1).

[0612] Furthermore, the stepped cross-sectional shape SCT1 includes a step 528D(2) and a step 528D(3) between the steps 528D(1).

[0613] The step 528D(2) is smaller than the step 528D(3), and the step 528D(2) is 0.5 to 1.5 times the thickness T1. Specifically, the step 528D(2) was 120 nm. The step 528D(3) was 210 nm.

[0614] The functional panel described in this embodiment has element 550G(i,j) (see FIGS. 2C, 2D, and 27A).

[0615] Element 550G(i,j) includes an electrode 551G(i,j), an electrode 552, and a layer 553 including a light-emitting material.

[0616] The layer 553 containing a light-emitting material has a region sandwiched between the electrode 551G(i,j) and the electrode 552.

[0617] <<Example of the configuration of the insulating film 528>>

[0618] The opening 528h(2) overlaps with the electrode 551G(i,j), and the insulating film 528 has a stepped cross-sectional shape SCT2.

[0619] The stepped cross-sectional shape SCT2 has a step 528D(4). Specifically, the step 528D(4) was 280 nm. The step 528D(4) was 0.85 times the step 528D(1).

[0620] As a result, a thin portion of the layer 553 containing a light-emitting material could be formed at the step 528D(1) and the step 528D(4). Specifically, a portion having a thickness of 64.1 nm could be formed in the layer 553 containing a light-emitting material. The layer 553 containing a light-emitting material had a thickness of 176.6 nm at the flat portion. Alternatively, a current flowing between the electrode 552 and the electrode 551R(i,j) in the region overlapping with the opening 528h(2) could be suppressed through a region of the layer 553 containing a light-emitting material overlapping with the insulating film 528. Alternatively, a current flowing between the electrode 552 and the electrode 551G(i,j) in the region overlapping with the opening 528h(1) could be suppressed through a region of the layer 553 containing a light-emitting material overlapping with the insulating film 528. Alternatively, the light-emitting region could be concentrated in the region overlapping with the opening 528h(1) or the region overlapping with the opening 528h(2).

[0621] The electrode 551G(i,j) has a thickness T4. Specifically, the thickness T4 was 60 nm.

[0622] Furthermore, the stepped cross-sectional shape SCT2 includes a step 528D(5) and a step 528D(6) between the steps 528D(4).

[0623] The step 528D(5) is 0.5 to 1.5 times the thickness T4, and is smaller than the step 528D(6). Specifically, the step 528D(5) is 80 nm, which is 1.3 times the thickness T4. The step 528D(6) is 200 nm, which is 0.95 times the step 528D(3).

[0624] This allows the step 528D(5) to be changed according to the thickness T4 of the electrode 551G(i,j). Alternatively, the step 528D(3) and the step 528D(6) can be made constant without being affected by the thickness T1 of the electrode 551R(i,j) and the thickness T4 of the electrode 551G(i,j). Alternatively, a thin portion can be formed in the step 528D(3) surrounding the opening 528h(1) and the step 528D(6) surrounding the opening 528h(2) of the layer 553 containing a light-emitting material. Alternatively, the current flowing between the electrode 552 overlapping the opening 528h(2) and the electrode 551R(i,j) through the region overlapping the insulating film 528 of the layer 553 containing a light-emitting material can be suppressed. Alternatively, it was possible to suppress a current flowing between electrode 552 and electrode 551G(i,j) overlapping with opening 528h(1) via a region of layer 553 containing a light-emitting material that overlaps with insulating film 528. Alternatively, it was possible to concentrate the light-emitting region in the region overlapping with opening 528h(1) or the region overlapping with opening 528h(2). EXAMPLES

[0625] In this example, a structure of a manufactured functional panel according to one embodiment of the present invention will be described with reference to FIG. 27B.

[0626] FIG. 27B is a transmission electron micrograph illustrating a cross section of a functional panel according to one embodiment of the present invention.

[0627] <Function panel configuration example 2> The functional panel described in this embodiment has different dimensions of each part from the functional panel described in embodiment 1 (see FIG. 27B). The dimensions of each part are summarized in the table below. The functional panel described in this embodiment has a thicker reflective film than the functional panel described in embodiment 1. For example, the thickness T2 of the reflective film 554R(i,j) of the functional panel described in this embodiment is thicker than the thickness T2 of the reflective film 554R(i,j) of the functional panel described in embodiment 1.

[0628] [Table 1]

[0629] This allowed a thin portion of the layer 553 containing a light-emitting material to be formed on the step 528D(1) surrounding the opening. Specifically, a portion having a thickness of 4.0 nm was formed on the layer 553 containing a light-emitting material. The layer 553 containing a light-emitting material had a thickness of 176.6 nm at the flat portion. The electrode 552 had a thickness of 70 nm at the flat portion and a thickness of 14.4 nm at its thinnest portion. EXAMPLES

[0630] In this example, a manufactured functional panel of one embodiment of the present invention will be described with reference to Table 2, FIG. 27B, and FIG. 28A to FIG. 28C.

[0631] Fig. 28A is a perspective view illustrating a configuration of a portion of a functional panel according to an embodiment of the present invention, Fig. 28B is a cross-sectional view taken along a cutting plane YZ in Fig. 28A, and Fig. 28C is a chromaticity diagram illustrating the display performance of a functional panel according to an embodiment of the present invention.

[0632] <Function panel configuration example 3> The functional panel described in this embodiment has the specifications summarized in the table below. Each part of the functional panel has the dimensions described in the second embodiment with reference to FIG. 27B.

[0633] [Table 2]

[0634] Moreover, the functional panel described in this embodiment includes a set of pixels 703(i,j), which includes pixels 702B(i,j), 702G(i,j), and 702R(i,j) (see FIG. 28A).

[0635] Pixel 702B(i,j) has a tandem light-emitting element and a microresonant structure adjusted to efficiently extract blue light, pixel 702G(i,j) has a tandem light-emitting element and a microresonant structure adjusted to efficiently extract green light, and pixel 702R(i,j) has a tandem light-emitting element and a microresonant structure adjusted to efficiently extract red light (see Figure 28B).

[0636] Each of the tandem-type light-emitting elements has a light-emitting unit that emits blue light and a light-emitting unit that emits yellow light, and the light-emitting unit that emits yellow light has a region sandwiched between the light-emitting unit that emits blue light and electrode 552.

[0637] The functional panel described in this embodiment includes a colored film CF(B) that transmits blue light, a colored film CF(G) that transmits green light, and a colored film CF(R) that transmits red light, where the colored film CF(B) is arranged to overlap with the pixel 702B(i,j), the colored film CF(G) is arranged to overlap with the pixel 702G(i,j), and the colored film CF(R) is arranged to overlap with the pixel 702R(i,j). Note that there is an area between adjacent pixels where the colored films overlap.

[0638] <Evaluation Results> Using the functional panel we created, we displayed red, green, and blue colors, and measured the chromaticity using a spectroradiometer (Topcon Technohouse: SR-UL1R). The measurement results are shown in the table below and plotted on the xy chromaticity diagram (CIE1931) (see Figure 28C). The triangle on the chromaticity diagram corresponds to the sRGB color space, and the functional panel we created had the ability to express a color gamut with an sRGB area ratio of 120.1% and an sRGB coverage rate of 96.0%.

[0639] [Table 3]

[0640] Bright red, green, and blue colors were displayed, and even when the brightness was changed, there was very little change in the displayed colors, and crosstalk was suppressed. EXAMPLES

[0641] In this example, the functional panel that was fabricated will be described with reference to FIGS. 29A to 33C and Table 4.

[0642] FIG. 29A is a cross-sectional view illustrating a configuration of a portion of the fabricated functional panel, and FIG. 29B is a cross-sectional view illustrating the configuration of a portion of FIG. 29A.

[0643] FIG. 30A is a flow chart explaining a method for producing a functional panel, and FIG. 30B is a wavelength-transmittance curve of the overlapped colored films.

[0644] Fig. 31A is a diagram for explaining the change in spectral radiance when blue is displayed at different brightnesses on the fabricated functional panel, and Fig. 31B is a diagram showing the spectral radiances shown in Fig. 31A normalized using the respective maximum values. Fig. 31C is a diagram for explaining the change in spectral radiance when green is displayed at different brightnesses on the fabricated functional panel, and Fig. 31D is a diagram showing the spectral radiances shown in Fig. 31C normalized using the respective maximum values. Fig. 31E is a diagram for explaining the change in spectral radiance when red is displayed at different brightnesses on the fabricated functional panel, and Fig. 31F is a diagram showing the spectral radiances shown in Fig. 31E normalized using the respective maximum values.

[0645] Fig. 32A is a diagram for explaining normalized spectral radiance when red is displayed on the fabricated functional panel, and Fig. 32B is a diagram showing an enlarged portion of Fig. 32A. Fig. 32C is a diagram for explaining normalized spectral radiance when green is displayed on the fabricated functional panel, and Fig. 32D is a diagram showing an enlarged portion of Fig. 32C. Fig. 32E is a diagram for explaining normalized spectral radiance when blue is displayed on the fabricated functional panel, and Fig. 32F is a diagram showing an enlarged portion of Fig. 32E.

[0646] Fig. 33A is a photograph for explaining the appearance of the produced functional panel, Fig. 33B is a photograph for explaining the display result, and Fig. 33C is a chromaticity diagram for explaining the display performance of the produced functional panel.

[0647] <Function panel configuration example 4> The functional panel described in this embodiment includes a base material 510S and an insulating film 573 (see FIG. 29A). In addition, between the base material 510S and the insulating film 573, an element 550R(i,j), an element 550B(i,j), an element 550G(i,j), and an element 550R(i,j+1) are provided.

[0648] The functional panel also includes a base film CFP and a sealing material 705, and includes colored films B-CF, G-CF, and R-CF between the base film CFP and the sealing material 705. The base film CFP includes a region sandwiched between the insulating film 573 and the colored film B-CF.

[0649] The colored film B-CF has a region overlapping with the element 550B(i,j), and has openings at positions overlapping with the element 550R(i,j) and at positions overlapping with the element 550G(i,j).

[0650] The colored film G-CF has a region overlapping with the element 550G(i,j), and has openings at positions overlapping with the element 550R(i,j) and at positions overlapping with the element 550B(i,j).

[0651] The colored film R-CF has a region overlapping with the element 550R(i,j), and has openings at positions overlapping with the element 550B(i,j) and at positions overlapping with the element 550G(i,j).

[0652] In addition, colored film R-CF has an area that overlaps with colored film B-CF, and the area where colored film R-CF and colored film B-CF overlap not only overlaps with the gap between element 550R(i,j) and element 550B(i,j), but also overlaps with the gap between element 550B(i,j) and element 550G(i,j).

[0653] Note that element 550G(i,j) includes electrode 551G(i,j), electrode 552, and layer 553 including a light-emitting material, and layer 553 including a light-emitting material includes a region sandwiched between electrode 551G(i,j) and electrode 552 (see FIG. 29B). Additionally, functional panel includes reflective film 554G(i,j), and reflective film 554G(i,j) includes a region sandwiching electrode 551G(i,j) between itself and layer 553 including a light-emitting material.

[0654] <Method of forming functional panel> The functional panel of this example was fabricated using a method having 10 steps, which is described below.

[0655] [First step] In the first step, a functional layer including a transistor and the like was fabricated (see FIG. 30A (ST1)).

[0656] [Second step] In the second step, a light-emitting element was fabricated (see FIG. 30A (ST2)).

[0657] [Third step] In the third step, an insulating film 573 was formed (see FIG. 30A (ST3)).

[0658] [Fourth step] In the fourth step, a base film CFP was formed (see FIG. 30A (ST4)).

[0659] [5th ​​step] In the fifth step, a colored film B-CF was formed (see FIG. 30A (ST5)).

[0660] [Sixth step] In the sixth step, a colored film G-CF was formed (see FIG. 30A (ST6)).

[0661] [Seventh step] In the seventh step, a colored film R-CF was formed (see FIG. 30A (ST7)).

[0662] [8th step] In the eighth step, a colored film R-CF was formed by overlapping (see FIG. 30A (ST8)).

[0663] [9th step] In a ninth step, the base material 770 and the colored film R-CF were attached to each other using a sealing material 705 (see FIG. 30A (ST9)).

[0664] [10th step] In the tenth step, one functional panel was separated from the other functional panels (see FIG. 30A (ST10)).

[0665] <Evaluation Results> The transmittance of the area where the colored film B-CF overlaps with the colored film G-CF was calculated from the transmittance of the colored film B-CF and the transmittance of the colored film G-CF. The results are shown using the symbol (B-CF\G-CF) (see Figure 30B).

[0666] In addition, the transmittance of the area where the colored film G-CF overlaps with the colored film R-CF was calculated from the transmittance of the colored film G-CF and the transmittance of the colored film R-CF. The results are shown using the symbol (G-CF\R-CF) (see Figure 30B).

[0667] The transmittance of the area where the colored film B-CF overlaps with the colored film R-CF was calculated from the transmittance of the colored film B-CF and the transmittance of the colored film R-CF. The results are shown using the symbol (B-CF\R-CF) (see Figure 30B). This shows that the structure in which the colored film B-CF and the colored film R-CF are overlapped can be most suitably used as a light-shielding layer provided between pixels.

[0668] 《Red, green, and blue display results》 Using the functional panel we created, we were able to project blue at 1cd / m 2 from 181 cd / m 2 The results showed that the shape of the normalized spectral radiance did not change regardless of the brightness of the display (see FIG. 31B).

[0669] Using the functional panel we created, green was measured at 1cd / m 2 from 1824 cd / m 2 The results showed that the shape of the normalized spectral radiance did not change regardless of the brightness of the display (see FIG. 31D).

[0670] Using the functional panel we created, red was measured at 1cd / m 2 from 473 cd / m 2 We displayed the images at different luminance levels between 0.01 and 0.1 (see FIG. 31E). As a result, the shape of the normalized spectral radiance did not change regardless of the brightness of the display (see FIG. 31F).

[0671] The produced functional panel has an area where the colored film R-CF overlaps with the colored film B-CF, and the area where the colored film R-CF and the colored film B-CF overlap not only overlaps with the gap between the element 550R(i,j) and the element 550B(i,j) but also with the gap between the element 550B(i,j) and the element 550G(i,j). The light emitted by the functional panel with such a configuration has an emission spectrum shown by a solid line in the figure (see Figures 32A to 32F).

[0672] On the other hand, the light emitted by a functional panel configured so that the colored films R-CF and B-CF are not formed to overlap at positions overlapping with the gaps between the elements 550B(i,j) and 550G(i,j) has an emission spectrum shown by the dashed line in the figure. Compared to the spectrum shown by the solid line, the spectrum shown by the dashed line has a wider half-width. Or, the tail of the spectrum is wider. This causes the color to lack vividness.

[0673] The appearance of the fabricated functional panel and the display results are shown in Figures 33A and 33B. High-definition images were displayed.

[0674] The chromaticity of the functional panel was measured using a spectroradiometer (SR-UL1R manufactured by Topcon Technohouse). The results are plotted on the xy chromaticity diagram (CIE1931) (see Figure 33C). The triangle on the chromaticity diagram corresponds to the sRGB color space.

[0675] <<White display result>> The functional panel produced achieved a brightness of 204 cd / m 2 or brightness 2203.4cd / m 2 The white color was displayed at a brightness of 0.288 and 0.304. The chromaticity x and chromaticity y of the displayed white color were 0.288 and 0.304, respectively. Even when the brightness was changed, the change in chromaticity was extremely small.

[0676] 《Red, green, and blue display results》 The brightness is 204cd / m 2 Conditions for displaying white at a brightness of 2203.4cd / m 2 The conditions for displaying white at a brightness of 100% were determined, and under each condition, only red, only green, or only blue was displayed. The sRGB coverage rate and sRGB area rate are shown in Table 4. Even when the brightness was changed, the change in chromaticity was extremely small.

[0677] [Table 4] EXAMPLES

[0678] In this example, a structure of a light-emitting element 1 included in a functional panel of one embodiment of the present invention will be described with reference to FIGS.

[0679] FIG. 34 illustrates a structure of a light-emitting element 1 included in a functional panel according to one embodiment of the present invention.

[0680] FIG. 35 is a graph showing voltage-luminance characteristics of a light-emitting element 1 included in a functional panel according to one embodiment of the present invention.

[0681] FIG. 36 shows a light-emitting element 1 provided in a functional panel according to an embodiment of the present invention, with a luminance of 1000 cd / m 2 1 is a diagram illustrating an emission spectrum when light is emitted at a luminance of 1000 nm.

[0682] FIG. 37 is a graph showing voltage-luminance characteristics of the comparative light-emitting element 2 and the comparative light-emitting element 3. In FIG.

[0683] FIG. 38 shows comparative light-emitting element 2 and comparative light-emitting element 3 at 1000 cd / m 2 1 is a diagram illustrating an emission spectrum when light is emitted at a luminance of 1000 nm.

[0684] <Example of function panel configuration> The functional panel fabricated in this embodiment includes an element, a reflective film, and an insulating film. Specifically, the functional panel includes the element, the reflective film, and the insulating film described in Example 3.

[0685] Example of element configuration The element of the functional panel fabricated in this example has a similar configuration to the light emitting element 150 (see FIG. 34).

[0686] The light-emitting element 150 has an electrode 551(i,j), an electrode 552, and a layer 553 containing a light-emitting material. The layer 553 containing a light-emitting material includes a unit 103, an intermediate layer 106, and a unit 103(12). The layer 553 containing a light-emitting material also includes a layer 105, and the layer 105 has a thickness of 0.05 nm or more and less than 0.1 nm.

[0687] Configuration of Light-Emitting Element 1 The structures of the light-emitting element 1 described in this example and the comparative light-emitting element 1 described later are shown in Table 5. The structural formulae of the materials used are shown below.

[0688] [Table 5]

[0689] [ka]

[0690] <<Method for producing light-emitting element 1>> The light-emitting element 1 described in this example was fabricated using a method having the following steps.

[0691] [First step] In the first step, a reflective film 554(i,j) A was formed. Specifically, the film was formed by a sputtering method using titanium as a target.

[0692] The reflective film 554(i,j)A contains Ti and has a thickness of 50 nm.

[0693] [Second step] In the second step, reflective film 554(i,j)B was formed on reflective film 554(i,j)A. Specifically, it was formed by a sputtering method using aluminum as a target.

[0694] The reflective film 554(i,j)B contains Al and has a thickness of 180 nm.

[0695] [Third step] In the third step, reflective film 554(i,j)C was formed on reflective film 554(i,j)B. Specifically, it was formed by a sputtering method using titanium as a target.

[0696] The reflective film 554(i,j)C contains Ti and has a thickness of 6 nm.

[0697] [Fourth step] In the fourth step, an electrode 551(i,j) was formed on the reflective film 554(i,j) C. Specifically, the electrode 551(i,j) was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.

[0698] Note that the electrode 551(i,j) includes ITSO, has a thickness of 110 nm and a thickness of 7.65 μm 2 It has an area of ​​(1.15 μm x 6.65 μm).

[0699] Next, the base material on which the electrodes 551(i, j) were formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. -4 The substrate was introduced into a vacuum deposition apparatus whose inside had been reduced in pressure to about Pa, and vacuum baking was performed at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool for about 30 minutes.

[0700] [5th ​​step] In the fifth step, the layer 104 was formed on the electrode 551(i,j). Specifically, the material was evaporated by using a resistive heating method.

[0701] Note that layer 104 contains an electron acceptor material (OCHD-001) and has a thickness of 1 nm.

[0702] [Sixth step] In the sixth step, a layer 112A was formed on the layer 104. Specifically, a material was evaporated by using a resistive heating method.

[0703] The layer 112A contains N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf) and has a thickness of 15 nm.

[0704] [Seventh step] In the seventh step, the layer 112B was formed on the layer 112A. Specifically, the material was evaporated by using a resistive heating method.

[0705] Additionally, layer 112B includes PCzN2 and has a thickness of 10 nm.

[0706] [8th step] In the eighth step, the layer 111 was formed on the layer 112B. Specifically, materials were co-evaporated using a resistance heating method.

[0707] The layer 111 contains 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA) and 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02) in a weight ratio of cgDBCzPA:3,10PCA2Nbf(IV)-02 = 1:0.015, and has a thickness of 25 nm.

[0708] [9th step] In a ninth step, a layer 113A was formed on the layer 111. Specifically, a material was evaporated by using a resistance heating method.

[0709] In addition, layer 113A includes cgDBCzPA and has a thickness of 15 nm.

[0710] [10th step] In the tenth step, a layer 113B was formed on the layer 113A. Specifically, a material was evaporated by using a resistive heating method.

[0711] The layer 113B contains 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 10 nm.

[0712] [11th step] In an eleventh step, the layer 105 was formed on the layer 113B. Specifically, the material was evaporated by using a resistive heating method.

[0713] The layer 105 contains lithium oxide (abbreviated as LiOx) and has a thickness of 0.05 nm.

[0714] [12th step] In a twelfth step, a layer 106A was formed on the layer 105. Specifically, a material was evaporated by using a resistive heating method.

[0715] The layer 106A contains copper phthalocyanine (abbreviation: CuPc) and has a thickness of 2 nm.

[0716] [13th step] In the thirteenth step, the layer 106B was formed on the layer 106A by evaporating the material using a resistive heating method.

[0717] In addition, layer 106B includes an electron acceptor material (OCHD-001) and has a thickness of 2.5 nm.

[0718] [14th step] In the fourteenth step, a layer 112(12) was formed on the layer 106B. Specifically, a material was evaporated by using a resistive heating method.

[0719] The layer 112(12) contains N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluoren-2-amine (abbreviation: PCBBiF) and has a thickness of 15 nm.

[0720] [15th step] In the fifteenth step, the layer 111(12) was formed on the layer 112(12). Specifically, materials were co-evaporated by using a resistance heating method.

[0721] The layer 111(12) contains 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), and bis[2-(2-pyridinyl-κN2)phenyl-κC][2-(5-phenyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(4dppy)) in a weight ratio of 8BP-4mDBtPBfpm:βNCCP:Ir(ppy)2(4dppy) = 0.5:0.5:0.1, and has a thickness of 40 nm.

[0722] [16th step] In the sixteenth step, a layer 113(12)A was formed on the layer 111(12). Specifically, a material was evaporated by using a resistance heating method.

[0723] The layer 113(12)A contains 9,9'-(pyrimidine-4,6-diyldi-3,1-phenylene)bis(9H-carbazole) (abbreviation: 4,6mCzP2Pm) and has a thickness of 25 nm.

[0724] [17th step] In the seventeenth step, a layer 113(12)B was formed on the layer 113(12)A. Specifically, a material was evaporated by using a resistance heating method.

[0725] In addition, the layer 113(12)B contains NBPhen and has a thickness of 15 nm.

[0726] [18th step] In the eighteenth step, the layer 105(12) was formed on the layer 113(12) B. Specifically, the material was evaporated by using a resistive heating method.

[0727] The layer 105(12) contains lithium fluoride (abbreviation: LiF) and has a thickness of 1 nm.

[0728] [Step 19] In the nineteenth step, the electrode 552A was formed on the layer 105(12). Specifically, materials were co-evaporated using a resistance heating method.

[0729] The electrode 552A contains Ag and Mg at a weight ratio of Ag:Mg=1:0.1, and has a thickness of 25 nm.

[0730] [20th step] In a twentieth step, the electrode 552B was formed on the electrode 552A. Specifically, the electrode 552B was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITO) as a target.

[0731] In addition, electrode 552B includes ITO and has a thickness of 70 nm.

[0732] <Operation characteristics of light-emitting element 1> When power was supplied, the light-emitting element 1 emitted light (see FIG. 34). The light emitted by the light-emitting element 1 included light EL1 and light EL1(2). The operating characteristics of the light-emitting element 1 were measured (see FIGS. 35 and 36). The measurements were performed at room temperature.

[0733] Light-emitting element 1 has a brightness of 1000cd / m 2 Table 6 shows the main initial characteristics when the light was emitted at about this temperature (note that the initial characteristics of other comparative light-emitting elements are also shown in Table 6, and their configurations will be described later).

[0734] [Table 6]

[0735] It was found that the light-emitting element 1 exhibited good characteristics. For example, the same luminance could be obtained at a lower driving voltage than that of the comparative light-emitting element 1. Note that in the light-emitting element 1, the layer 105 was formed to have a thickness corresponding to 0.05 nm, and in the comparative light-emitting element 1, the layer 105 was formed to have a thickness corresponding to 0.1 nm. The electrode 551(i,j) was 7.65 μm2 In the comparative light-emitting element having an area of ​​(1.15 μm×6.63 μm), the layer 105 formed to have a thickness equivalent to 0.05 nm was more preferable than the thickness equivalent to 0.1 nm. This enabled the driving voltage to be lowered. As a result, a novel functional panel excellent in convenience, usefulness, and reliability was provided.

[0736] (Reference example 1) The configuration of the comparative light-emitting element 1 is shown in Table 5.

[0737] The comparative light-emitting element 1 fabricated in this example differs from the light-emitting element 1 in that the layer 105 has a thickness of 0.1 nm.

[0738] <<Method of manufacturing comparative light-emitting element 1>> Comparative light-emitting element 1 was fabricated using a method having the following steps.

[0739] The method for fabricating the comparative light-emitting element 1 differs from the method for fabricating the light-emitting element 1 in that a thickness of 0.1 nm is used instead of a thickness of 0.05 nm in the step of forming the layer 105. Here, the differences will be described in detail, and the above description will be used for the parts in which similar methods are used.

[0740] [11th step] In an eleventh step, the layer 105 was formed on the layer 113B. Specifically, the material was evaporated by using a resistive heating method.

[0741] The layer 105 contains LiOx and has a thickness of 0.1 nm.

[0742] (Reference example 2) The structures of the comparative light-emitting element 2 and the comparative light-emitting element 3 are shown in Table 7.

[0743] [Table 7]

[0744] The comparative light-emitting element 2 fabricated in this embodiment has the following features: the reflective film 554(i,j)C contains an alloy containing Ag-Pd-Cu (abbreviated as APC), the electrode 551(i,j) has a thickness of 85 nm, and 2 The light-emitting element 1 differs from the light-emitting element 1 in that it has an area of ​​(2 mm×2 mm) and that the layer 112A has a thickness of 35 nm.

[0745] <<Method of manufacturing comparative light-emitting element 2>> Comparative light-emitting element 2 was fabricated using a method having the following steps.

[0746] The method for fabricating comparative light-emitting element 2 is different from that for forming reflective film 554(i,j)A and reflective film 554(i,j)B. In the step of forming reflective film 554(i,j)C, a film containing APC is used instead of a film containing Ti having a thickness of 6 nm. In the step of forming electrode 551(i,j), 2 This method differs from the method for fabricating the light-emitting element 1 in that an area of ​​(2 mm×2 mm) is used, that a thickness of 35 nm is used instead of a thickness of 15 nm in the step of forming layer 112A, and that a thickness of 15 nm is used instead of a thickness of 25 nm in the step of forming electrode 552A. Here, the differences will be described in detail, and the above description will be used for the parts in which similar methods are used.

[0747] [Steps 1 to 3] The first and second steps were omitted, and in the third step, the reflective film 554(i,j)C was formed. Specifically, the reflective film was formed by a sputtering method using APC as a target.

[0748] The reflective film 554(i,j)C includes APC.

[0749] [Fourth step] In the fourth step, an electrode 551(i,j) was formed on the reflective film 554(i,j) C. Specifically, the electrode 551(i,j) was formed by a sputtering method using indium oxide-tin oxide (ITSO) containing silicon or silicon oxide as a target.

[0750] Note that the electrode 551(i,j) includes ITSO, has a thickness of 85 nm and a thickness of 4 mm. 2 It has an area of ​​(2mm x 2mm).

[0751] [Sixth step] In the sixth step, a layer 112A was formed on the layer 104. Specifically, a material was evaporated by using a resistive heating method.

[0752] In addition, layer 112A includes BBABnf and has a thickness of 35 nm.

[0753] [Step 19] In the nineteenth step, the electrode 552A was formed on the layer 105(12). Specifically, materials were co-evaporated using a resistance heating method.

[0754] The electrode 552A contains Ag and Mg at a weight ratio of Ag:Mg=1:0.1, and has a thickness of 15 nm.

[0755] Moreover, the comparative light-emitting element 3 fabricated in this example differs from the comparative light-emitting element 2 in that the layer 105 has a thickness of 0.1 nm.

[0756] <<Method of manufacturing comparative light-emitting element 3>> Comparative light-emitting element 3 was fabricated using a method having the following steps.

[0757] The method for fabricating the comparative light-emitting element 3 differs from the method for fabricating the comparative light-emitting element 2 in that in the step of forming the layer 105, a thickness of 0.1 nm is used instead of a thickness of 0.05 nm. Here, the differences will be described in detail, and the above description will be used for the parts in which similar methods are used.

[0758] [11th step] In an eleventh step, the layer 105 was formed on the layer 113B. Specifically, the material was evaporated by using a resistive heating method.

[0759] The layer 105 contains LiOx and has a thickness of 0.1 nm.

[0760] <Operation characteristics of comparative light-emitting elements 1 to 3> The operating characteristics of the comparative light-emitting elements 1 to 3 were measured (see FIGS. 37 and 38). The measurements were performed at room temperature.

[0761] Table 6 shows main initial characteristics of the comparative light-emitting elements 1 to 3.

[0762] The comparative light-emitting element 3 was able to obtain the same luminance as the comparative light-emitting element 2 at a lower driving voltage than the comparative light-emitting element 2. The layer 105 of the comparative light-emitting element 3 had a thickness of 0.05 nm, and the layer 105 of the comparative light-emitting element 2 had a thickness of 0.1 nm. 2 In the comparative light-emitting device having an area of ​​(2 mm×2 mm), the results showed that a thickness of 0.1 nm for the layer 105 was more preferable than a thickness of 0.05 nm.

[0763] For example, when it is explicitly stated in this specification that X and Y are connected, the case where X and Y are electrically connected, the case where X and Y are functionally connected, and the case where X and Y are directly connected are considered to be disclosed in this specification, etc. Therefore, it is not limited to a specific connection relationship, for example, a connection relationship shown in a figure or text, and a connection relationship other than that shown in a figure or text is also considered to be disclosed in the figure or text.

[0764] Here, X and Y are objects (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.).

[0765] An example of a case where X and Y are directly connected is a case where an element that enables an electrical connection between X and Y (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display element, a light-emitting element, a load, etc.) is not connected between X and Y, and a case where X and Y are connected without an element that enables an electrical connection between X and Y (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display element, a light-emitting element, a load, etc.).

[0766] As an example of a case where X and Y are electrically connected, one or more elements (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display element, a light-emitting element, a load, etc.) that enable the electrical connection between X and Y can be connected between X and Y. The switch has a function of controlling on / off. In other words, the switch has a function of being in a conductive state (on state) or a non-conductive state (off state) and controlling whether or not a current flows. Alternatively, the switch has a function of selecting and switching a path for the current to flow. The case where X and Y are electrically connected includes the case where X and Y are directly connected.

[0767] As an example of a case where X and Y are functionally connected, one or more circuits that enable the functional connection between X and Y (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits, step-down circuits, etc.), level shifter circuits that change the potential level of a signal, etc.), voltage sources, current sources, switching circuits, amplifier circuits (circuits that can increase the signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y. As an example, even if another circuit is sandwiched between X and Y, if a signal output from X is transmitted to Y, X and Y are considered to be functionally connected. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

[0768] In addition, when it is explicitly stated that X and Y are electrically connected, the following cases are considered to be disclosed in this specification etc.: when X and Y are electrically connected (i.e., when they are connected with another element or circuit between them), when X and Y are functionally connected (i.e., when they are functionally connected with another circuit between them), and when X and Y are directly connected (i.e., when they are connected without another element or circuit between them). In other words, when it is explicitly stated that they are electrically connected, the same content as when it is simply and explicitly stated that they are connected is considered to be disclosed in this specification etc.

[0769] For example, when the source (or the first terminal, etc.) of the transistor is electrically connected to X via (or without) Z1 and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via (or without) Z2, or when the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y, it can be expressed as follows.

[0770] For example, it can be expressed as "X, Y, and the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y." Or, it can be expressed as "The source (or first terminal, etc.) of the transistor is electrically connected to X, the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as "X is electrically connected to Y through the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are provided in this connection order." By using expressions similar to these examples to specify the order of connections in a circuit configuration, the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor can be distinguished and the technical scope can be determined.

[0771] Alternatively, as another way of expressing it, for example, it can be expressed as "the source (or the first terminal, etc.) of the transistor is electrically connected to X via at least a first connection path, the first connection path does not have a second connection path, the second connection path is a path between the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor via a transistor, the first connection path is a path via Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via at least a third connection path, the third connection path does not have the second connection path, and the third connection path is a path via Z2." Alternatively, it can be expressed as "the source (or the first terminal, etc.) of the transistor is electrically connected to X via Z1 by at least a first connection path, the first connection path does not have a second connection path, the second connection path has a connection path via a transistor, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via Z2 by at least a third connection path, and the third connection path does not have the second connection path." Alternatively, it can be expressed as follows: "The source (or first terminal, etc.) of the transistor is electrically connected to X via Z1 by at least a first electrical path, the first electrical path does not have a second electrical path, the second electrical path is an electrical path from the source (or first terminal, etc.) of the transistor to the drain (or second terminal, etc.) of the transistor, and the drain (or second terminal, etc.) of the transistor is electrically connected to Y via Z2 by at least a third electrical path, the third electrical path does not have a fourth electrical path, and the fourth electrical path is an electrical path from the drain (or second terminal, etc.) of the transistor to the source (or first terminal, etc.) of the transistor." By using an expression method similar to these examples to define the connection path in the circuit configuration, the source (or first terminal, etc.) and the drain (or second terminal, etc.) of the transistor can be distinguished to determine the technical scope.

[0772] Note that these representation methods are merely examples and are not limited to these representation methods. Here, X, Y, Z1, and Z2 are objects (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.).

[0773] In addition, even when components that are independent on a circuit diagram are shown as being electrically connected to each other, one component may have the functions of multiple components. For example, when a part of a wiring also functions as an electrode, one conductive film has both the functions of a wiring and an electrode. Therefore, the term "electrical connection" in this specification also includes such a case where one conductive film has the functions of multiple components. [Explanation of symbols]

[0774] 30: object, 103: unit, 104: layer, 105: layer, 106: intermediate layer, 106A: layer, 106B: layer, 106N: part, 111: layer, 112: layer, 112A: layer, 112B: layer, 113: layer, 113A: layer, 113B: layer, 150: light emitting element, 200: information processing device, 210: calculation device, 211: calculation section, 212: memory section, 213: artificial intelligence section, 214: transmission path, 215: input / output interface, 220: input / output device, 2203: luminance, 230: display section, 231: area, 233: timing controller, 234: expansion circuit, 235: image processing Circuit, 238: control unit, 240: input unit, 241: detection region, 243: control circuit, 250: detection unit, 290: communication unit, 300: transistor, 305: conductor, 305a: conductor, 305b: conductor, 305c: conductor, 312: insulator, 314: insulator, 316: insulator, 322: insulator, 324: insulator, 330: oxide, 330a: oxide, 330b: oxide, 340: conductor, 340a: conductor, 340b: conductor, 341: insulator, 341a: insulator, 341b: insulator, 342: conductor, 342a: conductor, 342b: conductor, 343: oxide object, 343a: oxide, 343b: oxide, 346: conductor, 346a: conductor, 346b: conductor, 350: insulator, 350a: insulator, 350b: insulator, 360: conductor, 360a: conductor, 360b: conductor, 371: insulator, 371a: insulator, 371b: insulator, 375: insulator, 380: insulator, 382: insulator, 383: insulator, 385: insulator, 501: insulating film, 501A: insulating film, 501B: insulating film, 501C: insulating film, 501D: insulating film, 504: conductive film, 506: insulating film, 507A: conductive film, 507B: conductive film, 508: semiconductor film, 508A: region, 508B: region, 508C: region, 510: substrate, 510S: substrate, 512A: conductive film, 512B: conductive film, 516: insulating film, 516A: insulating film, 516B: insulating film, 518: insulating film, 519B: terminal, 520: functional layer, 520B: functional layer, 521: insulating film, 5210: arithmetic device, 521A: insulating film, 521B: insulating film, 522B: insulating film, 522G: insulating film, 524: conductive film, 528: insulating film, 528D: step, 528h: opening, 5290: communication unit, 530G: pixel circuit, 530S: pixel circuit, 550B: element, 550G: element,550R: element, 550S: element, 551: electrode, 551B: electrode, 551G: electrode, 551R: electrode, 551S: electrode, 552: electrode, 552A: electrode, 552B: electrode, 553: layer, 553S: layer, 554: reflective film, 554B: reflective film, 554G: reflective film, 554R: reflective film, 573: insulating film, 573A: insulating film, 573B: insulating film, 591G: opening, 591S: opening, 700: functional panel, 700TP: functional panel, 702B: pixel, 702G: pixel, 702R: pixel, 702S: pixel, 703: pixel, 705: sealing material, 720: functional layer, 77 0: substrate, 770P: functional film, 771: insulating film, 802: detector, 1504: conductive film, 1506: insulating film, 1508: semiconductor, 1508A: region, 1508B: region, 1508C: region, 1512A: conductive film, 1512B: conductive film, 5200B: information processing device, 5220: input / output device, 5230: display unit, 5240: input unit, 5250: detection unit, ADC: analog-to-digital conversion circuit, AMP: amplifier circuit, ANO: conductive film, BM: light-shielding film, C21: capacitance, C22: capacitance, C31: capacitance, CAPSEL: conductive film, CDSBIAS: conductive film, CDSVDD: conductive film ,CDSVSS: Conductive film, CF: Colored film, CFP: Undercoat film, CI: Control information, CL: Conductive film, CP: Conductive material, DC: Detection circuit, DS: Detection information, EL1: Light, EL1(2): Light, FD: Node, FI: Image, FP: Fingerprint, FPC1: Flexible printed circuit board, G1: Conductive film, G2: Conductive film, GCLK: Signal, GD: Drive circuit, GDA: Drive circuit, GDB: Drive circuit, GDC: Drive circuit, II: Input information, IN: Terminal, IND: Index image, KB: Structure, KBM: Light shielding film, M21: Transistor, M31: Transistor, M32: Transistor, MD: transistor, MD2: transistor, ML: wiring, MUX: multiplexer, N21: node, N22: node, NP: navigation panel, NS: node, OSC: oscillator circuit, OUT: terminal, P1: position information, PWC1: signal, PWC2: signal, RC: readout circuit, RD: drive circuit, RS: conductive film, S1g: conductive film, S2g: conductive film, SC: sampling circuit, SCT1: cross-sectional shape, SCT2: cross-sectional shape, SD: drive circuit, SE: conductive film, SH: area, SW21: switch, SW22: switch, SW23: switch, SW31: switch,SW32: Switch, SW33: Switch, T1: Thickness, T2: Thickness, T3: Thickness, T4: Thickness, THM: Finger, TN: Thumbnail image, TX: Conductive film, V0: Conductive film, VCL: Conductive film, VCOM2: Conductive film, VCP: Conductive film, VI: Image information, VIV: Conductive film, VLEN: Conductive film, VPD: Conductive film, VPI: Conductive film, VR: Conductive film, WX: Conductive film,

Claims

1. A first element, a second element, a first reflective film, a second reflective film, and an insulating film; The first element has a first electrode, a second electrode, and a layer including a light-emitting material; the second element has a third electrode, the second electrode, and a layer including the light-emitting material; the layer containing a light-emitting material has a region sandwiched between the first electrode and the second electrode, and a region sandwiched between the third electrode and the second electrode, the first electrode and the third electrode are light-transmitting, the first electrode is located above the first reflective film, the third electrode is located above the second reflective film, the insulating film has an area overlapping with a part of the first reflective film, a part of the first electrode, a part of the second reflective film, and a part of the third electrode; the insulating film has a first opening and a second opening, the first opening overlaps with the first electrode and the first reflective film; the second opening overlaps with the third electrode and the second reflective film, the insulating film has a first step-like cross-sectional shape and a second step-like cross-sectional shape; A functional panel, wherein an end of the first electrode has a tapered shape.

2. A first element, a second element, a first reflective film, a second reflective film, and an insulating film; The first element has a first electrode, a second electrode, and a layer including a light-emitting material; the second element has a third electrode, the second electrode, and a layer including the light-emitting material; the layer containing a light-emitting material has a region sandwiched between the first electrode and the second electrode, and a region sandwiched between the third electrode and the second electrode, the first electrode and the third electrode are light-transmitting, the first electrode is located above the first reflective film, the third electrode is located above the second reflective film, the insulating film has an area overlapping with a part of the first reflective film, a part of the first electrode, a part of the second reflective film, and a part of the third electrode; the insulating film has a first opening and a second opening, the first opening overlaps with the first electrode and the first reflective film; the second opening overlaps with the third electrode and the second reflective film, the insulating film has a first step-like cross-sectional shape and a second step-like cross-sectional shape; a thickness of the first electrode is greater than a thickness of the third electrode; the thickness of the first reflective film is equal to the thickness of the second reflective film; A functional panel, wherein an end of the first electrode has a tapered shape.

3. In claim 1 or 2, The first stepped cross-sectional shape of the functional panel has a first step and a second step.

4. In any one of claims 1 to 3, The second stepped cross-sectional shape of the functional panel has a third step and a fourth step.

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