Multi-chamber reactor for selective deposition of silicon nitride and method for using the same

Abstract

To provide an improved method for forming a structure containing silicon nitride.SOLUTION: There are disclosed a method and a system for depositing silicon by using a multi-chamber reactor. An exemplary method includes executing at least one deposition cycle, processing, etching, and / or curing.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates generally to methods of depositing materials and structures including the deposited materials. More specifically, the present disclosure relates to methods of forming structures including deposited silicon nitride and structures including such materials. [Background technology]

[0002] Silicon nitride films are used for a wide variety of applications, for example, they can be used to form insulating regions, etch stop regions, etch resistant protective regions, and the like on structures formed during the formation of electronic devices.

[0003] To form regions or features that include silicon nitride, silicon nitride films are typically deposited on the surface of a substrate. The deposited film is then patterned, for example using photolithography, after which the film is etched to remove a portion of the silicon nitride to form desired features or areas that include the remaining silicon nitride material. As device features continue to decrease in size, it becomes increasingly difficult to pattern and etch silicon nitride films to form patterned silicon nitride features or areas of desired dimensions, especially when it is desired to selectively deposit silicon nitride in vias or trenches on the substrate surface. In addition, lithography and etching steps can increase the costs associated with device fabrication and the time required for device fabrication.

[0004] Recently, techniques have been developed for selectively forming silicon nitride on portions of a substrate surface. Such techniques often involve chemically modifying the surface prior to deposition. While such techniques can work well for some applications, the techniques can result in undesirable contamination on the substrate surface. Such processes can also increase the complexity of the process for forming the structure. Furthermore, such processes can be relatively time consuming, thus increasing the costs associated with such processes. As a result, improved methods for forming structures including silicon nitride are desired.

[0005] Any discussion, including the discussion of problems and solutions described in this section, is included in this disclosure solely for the purpose of providing a context for the disclosure and should not be construed as an admission that any or all of the information was known at the time the invention was made or otherwise constitutes prior art. Summary of the Invention [Means for solving the problem]

[0006] Various embodiments of the present disclosure relate to methods that can be used to selectively deposit or form silicon nitride on a surface of a substrate. While the manner in which the various embodiments of the present disclosure address the shortcomings of previous methods is discussed in more detail below, the various embodiments of the present disclosure generally provide an improved reactor system for selectively depositing silicon nitride and an improved method for selectively forming silicon nitride on a surface or material on a substrate. As described in more detail below, the use of a multi-chamber reactor system and corresponding method can reduce contamination associated with the deposition of silicon nitride, can provide desired properties to the deposited silicon nitride, and / or can increase the throughput associated with (e.g., selective) deposition of silicon nitride having desired properties and / or characteristics.

[0007] According to at least one embodiment of the present disclosure, a multi-chamber reactor system includes a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form a deposited silicon nitride, a second reaction chamber configured to process the deposited silicon nitride, and a controller configured to provide a substrate in the first reaction chamber, to perform a deposition cycle in the first reaction chamber, to move the substrate to the second reaction chamber, and to perform a treatment process in the second reaction chamber. The deposition cycle can include pulsing a silicon precursor from a silicon precursor source to the first reaction chamber, providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber, and providing a deposition plasma power to form active species from the nitrogen-containing reactant. The treatment process can include providing a hydrogen-containing reactant from a hydrogen reactant source to the second reaction chamber, and providing a treatment plasma power to form active species from the hydrogen-containing reactant. The multi-chamber reactor system can be used to selectively deposit silicon nitride on a surface. The selective deposition can be topological, such that silicon nitride is selectively deposited in features such as trenches. Additionally or alternatively, the selective deposition can be material-based, such that silicon nitride is selectively deposited on a first material relative to a second material. According to examples of these embodiments, the controller is configured to perform multiple deposition cycles in the first reaction chamber before moving the substrate to the second reaction chamber. The controller can be further configured to move the substrate from the second reaction chamber to the first reaction chamber, for example, for another deposition cycle. The multi-chamber reactor system can further include a third reaction chamber configured to deposit additional silicon nitride on a surface of the processed silicon nitride, and a fourth reaction chamber configured to process the additional silicon nitride.In such a case, the controller can be configured to move the substrate from the first reaction chamber to the second reaction chamber, and from the second reaction chamber to the third reaction chamber, and from the third reaction chamber to the fourth reaction chamber to form selectively deposited silicon nitride. Alternatively, the controller can be configured to move the substrate between the first and second reaction chambers, and / or between the third and fourth reaction chambers to repeat the deposition and treatment steps as described herein. Two or more (e.g., four) reaction chambers can form part of a process module.

[0008] According to further exemplary embodiments of the present disclosure, a method for depositing silicon nitride is provided. The exemplary method includes providing a substrate in a first reaction chamber, depositing silicon nitride on a surface of the substrate in the first reaction chamber to form a deposited silicon nitride, moving the substrate to a second reaction chamber, and processing the deposited silicon nitride in the second reaction chamber to form a processed silicon nitride. The first reaction chamber and the second reaction chamber can form part of a module. According to examples of these embodiments, the processing step includes selectively removing the deposited silicon nitride. According to further examples, the nitrogen-containing reactant is continuously provided during one or more cycles including depositing silicon nitride and processing the deposited silicon nitride. In some cases, the silicon nitride can be conformally deposited. In some cases, the deposited silicon is initially flowable.

[0009] According to further embodiments of the present disclosure, a multi-chamber reactor system includes a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form a conformally deposited silicon nitride, a second reaction chamber configured to topologically selectively etch the conformally deposited silicon nitride, and a controller. The configurations of the first reaction chamber and the second reaction chamber can be substantially the same. According to examples of these embodiments, the controller is configured to provide a substrate in the first reaction chamber, to perform a deposition cycle in the first reaction chamber, to move the substrate to the second reaction chamber, and to perform a topologically selective etching process in the second reaction chamber. The deposition cycle can include pulsing a silicon precursor from a silicon precursor source to the first reaction chamber, providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber, and providing a deposition plasma power to form activated species from the nitrogen-containing reactant. According to further embodiments, the topologically selective etching process includes providing a hydrogen and / or fluorine-containing reactant from a hydrogen and / or fluorine reactant source and providing an etching plasma power to form active species from the hydrogen and / or fluorine-containing reactant. In some cases, the active species include fluorine radicals and hydrogen radicals. The multi-chamber reactor system can include a third reaction chamber and a fourth reaction chamber, the third reaction chamber and the fourth reaction chamber being the same or similar to the first and second reaction chambers, respectively. The controller can be configured to move the substrate between the first reaction chamber and the second reaction chamber, and / or between the first reaction chamber, the second reaction chamber, the third reaction chamber, and the fourth reaction chamber.

[0010] According to further examples of the present disclosure, a multi-chamber reactor system includes a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form a deposited silicon nitride, a second reaction chamber configured to cure the deposited silicon nitride, and a controller. The controller can be configured to perform a deposition cycle in the first reaction chamber, move the substrate to the second reaction chamber, and perform a curing process in the second reaction chamber. According to examples of these embodiments, the multi-chamber reactor system includes a third reaction chamber configured to perform an etching process. Alternatively, in some cases, the etching process can be performed in the second reaction chamber.

[0011] According to still further embodiments of the present disclosure, a method of depositing silicon nitride includes providing a substrate in a first reaction chamber, depositing silicon nitride on a surface of the substrate in the first reaction chamber to form a deposited silicon nitride, moving the substrate to a second reaction chamber, curing the deposited silicon nitride in the second reaction chamber to form a hardened silicon nitride, and etching a portion of the hardened silicon nitride to form a selectively deposited silicon nitride. According to examples of these embodiments, the etching step is performed in the second reaction chamber. According to further examples, the etching step is performed in a third reaction chamber. According to further examples, the temperature in the first reaction chamber during the step of depositing silicon nitride is less than 75°C, or between 200°C and 450°C. Additionally or alternatively, the temperature in the second reaction chamber during the step of curing silicon nitride is greater than 450°C, 500°C, 525°C, or 550°C.

[0012] According to an additional embodiment of the present disclosure, a structure is provided. The structure can include a substrate having a surface including a first material and a second material, and a silicon nitride layer selectively formed on the first material relative to the second material. The silicon nitride layer can be formed using a method described herein. Additionally or alternatively, the structure can include silicon nitride selectively formed in features on the substrate, such as in gaps, vias, trenches, or the like.

[0013] These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain specific embodiments, when read in conjunction with the accompanying drawings, in which: The invention is not limited to any particular embodiment disclosed.

[0014] A more complete understanding of the exemplary embodiments of the present disclosure can be derived by reference to the detailed description and claims when considered in conjunction with the following illustrative figures. [Brief description of the drawings]

[0015] [Figure 1] FIG. 1 illustrates a multi-chamber reactor system in accordance with at least one embodiment of the present disclosure. [Diagram 2] FIG. 1 illustrates a method in accordance with at least one embodiment of the present disclosure. [Diagram 3] FIG. 2 illustrates a timing sequence in accordance with at least one embodiment of the present disclosure. [Figure 4] FIG. 1 illustrates a structure according to an embodiment of the present disclosure. [Diagram 5] FIG. 1 illustrates a structure according to an embodiment of the present disclosure. [Figure 6] FIG. 1 illustrates another multi-chamber reactor system in accordance with at least one embodiment of the present disclosure. [Figure 7] FIG. 1 illustrates another method in accordance with at least one embodiment of the present disclosure. [Figure 8] FIG. 1 illustrates a structure according to an embodiment of the present disclosure. [Figure 9] FIG. 1 illustrates a structure according to an embodiment of the present disclosure. [Figure 10] FIG. 1 illustrates a structure according to an embodiment of the present disclosure. [Figure 11] FIG. 1 illustrates another multi-chamber reactor system in accordance with at least one embodiment of the present disclosure. [Figure 12] FIG. 1 illustrates another method in accordance with at least one embodiment of the present disclosure. [Figure 13] FIG. 1 illustrates a structure according to an embodiment of the present disclosure. [Figure 14] FIG. 14 is a diagram illustrating a reaction chamber suitable for use with embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale - for example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure.

[0017] Although certain specific embodiments and examples are disclosed below, it will be understood that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious modifications and equivalents thereof, and therefore, it is not intended that the scope of the disclosed invention should be limited by the specific disclosed embodiments described below.

[0018] Exemplary embodiments of the present disclosure provide improved systems and methods for selectively depositing silicon nitride on a surface of a substrate. The exemplary systems and methods can be used to selectively deposit silicon nitride on a first material relative to a second material without employing in-situ or ex-situ surface treatment prior to depositing silicon nitride. Furthermore, the exemplary systems and methods can be used to deposit and process silicon nitride in a single process module, for example, without exposing the substrate to ambient conditions. Thus, any contamination of the surface that may otherwise result from performing pre-deposition treatments and / or exposure to ambient conditions can be mitigated or avoided. Furthermore, the methods described herein can be used to selectively deposit silicon nitride in a relatively cost-effective and simple manner.

[0019] In this disclosure, gas can include materials that are gaseous at ambient temperature and pressure (NTP), vaporized solids, and / or vaporized liquids, and can be comprised of a single gas or a mixture of gases in some circumstances. Gases other than process gases, i.e., gases introduced without passing through a gas distribution assembly, a multi-port injection system, other gas distribution devices, or the like, can be used, for example, to seal the reaction space and can include sealing gases, such as noble gases. In some cases, the term precursor can refer to a compound that participates in a chemical reaction that produces another compound, particularly a compound that constitutes the membrane matrix or the backbone of the membrane. In some cases, the term reactant can be used interchangeably with the term precursor. The term inert gas can refer to a gas that does not participate in a chemical reaction and / or does not become part of the membrane matrix to any appreciable extent. Exemplary inert gases include He, Ar, H2, N2 (e.g., when not activated by plasma), and any combination thereof.

[0020] The term substrate, as used herein, can refer to any underlying material(s) that may be used to form or upon which a device, circuit, or film may be formed. The substrate can include a bulk material, such as silicon (e.g., single crystal silicon), and can include one or more layers overlying the bulk material. Additionally, the substrate can include various topologies, such as recesses, lines, and the like, formed within or on at least a portion of the layer of the substrate. By way of example, the substrate can include a surface including a first material and a second material, as described in more detail below.

[0021] The term film and / or layer as used herein can refer to any continuous or non-continuous structure and material, such as the material deposited by the method disclosed herein. For example, the film and / or layer can include two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and / or molecules. The film or layer can include materials or layers with pinholes that may be at least partially continuous. Alternatively, the film or layer can be composed of completely isolated islands.

[0022] The term cyclic deposition, as used herein, may refer to a process that involves sequential introduction of precursors and / or reactants into a reaction chamber and / or sequential plasma power pulses to deposit a layer over a substrate. Cyclic deposition processes include processing techniques such as atomic layer deposition (ALD), cyclic chemical vapor deposition (CCVD), and plasma enhanced ALD and CCVD.

[0023] As used herein, the term cyclic chemical vapor deposition may refer to any process in which a substrate is sequentially exposed to two or more volatile precursors / reactants that react and / or decompose on the substrate to produce a desired deposit.

[0024] A layer comprising silicon nitride (SiN) can comprise, consist essentially of, or consist of a silicon nitride material. A film consisting of silicon nitride can contain acceptable amounts of impurities such as carbon, chlorine or other halogens, and / or hydrogen, which may come from one or more precursors used to deposit the silicon nitride layer. As used herein, SiN, i.e., silicon nitride, refers to a compound that contains silicon and nitrogen. SiN is a compound that is formed by condensing silicon and nitrogen into a silicon nitride layer. x where x is, for example, about 0.5 to about 2.0 when several Si-N bonds are formed. In some cases, x may be about 0.9 to about 1.7, about 1.0 to about 1.5, or about 1.2 to about 1.4. In some embodiments, silicon nitride is formed when Si has an oxidation state of +IV and the amount of nitride in the material can vary. Silicon nitride can include silicon carbon nitride (SiCN), which includes silicon carbon and nitrogen.

[0025] As used herein, a structure can include a substrate as described herein. A structure can include one or more layers overlying a substrate, such as one or more layers formed according to a method as described herein.

[0026] Further, in this disclosure, any two numbers of a variable may constitute a workable range for that variable, and any range stated may include or exclude the endpoints. In addition, any value of a stated variable (whether they are stated with "about" or not) may refer to an exact or approximate value, and may include equivalents, and may also refer to an average, median, representative value, majority, or the like. Furthermore, in this disclosure, the terms "comprise", "comprise", "have" and "have" may separately refer to "typically or roughly comprise", "comprise", "consist essentially of", or "consist of" in some embodiments. It should be understood that when a composition, method, device, or the like is referred to as comprising certain features, the reference means to include those features and does not necessarily exclude the presence of other features, unless other features render the claim infeasible. Notwithstanding the above, the terms "comprising" or "including" or "having" include the meaning of "consisting of" (i.e., when the composition, method, device, or the like in question includes only the recited features, components, and / or steps, and does not include any other features, components, steps, and the like) and include "consisting essentially of."

[0027] In this disclosure, any defined meaning does not necessarily exclude, in some embodiments, the ordinary and accustomed meaning.

[0028] Turning now to the figures, FIG. 1 illustrates a multi-chamber reactor system 100 according to an embodiment of the present disclosure. In the illustrated example, the multi-chamber reactor system 100 includes a first reaction chamber RC1, a second reaction chamber RC2, a third reaction chamber RC3, and a fourth reaction chamber RC4. The configuration of RC1-RC4 can vary according to the desired process. Exemplary reaction chambers suitable for use as one or more of RC1-RC4 are described in more detail below in connection with FIG. 14.

[0029] According to an embodiment of the present disclosure, at least one of RC1-RC4 is configured to deposit silicon nitride on a surface of a substrate to form a deposited silicon nitride. As an example, RC1 and RC3 can be configured to deposit silicon nitride on a surface of a substrate.

[0030] According to a further embodiment of the present disclosure, at least one of RC1-RC4 is configured to process deposited silicon nitride, for example, RC2 and / or RC4 can be configured to process deposited silicon nitride.

[0031] The multi-chamber reactor system 100 can also include a substrate handler SH configured to move the substrate between two or more reaction chambers RC1-RC4. For example, the substrate handler SH (and controller 114) can be configured to move the substrate between RC1, RC2, RC3, RC4 and optionally cycle. In these cases, the third reaction chamber RC3 can be configured to deposit additional silicon nitride on a surface of the treated silicon nitride, and RC4 can be configured to process the additional silicon nitride. Additionally or alternatively, the substrate handler SH (and controller 114) can move the substrate between RC1 and RC2 and cycle, and / or move the substrate between RC3 and RC4 and cycle.

[0032] The multi-chamber reactor system 100 can also include silicon precursor sources 102, 104, for example, coupled to RC1 and / or RC2. Each silicon precursor source 102, 104 includes a container and a silicon precursor therein. Exemplary suitable silicon precursors are described below. Although illustrated separately, the silicon precursor sources 102, 104 can be a single precursor source.

[0033] The multi-chamber reactor system 100 may also include a nitrogen-containing reactant source 106, 108 coupled to one or more of the reaction chambers RC1, RC2. The nitrogen-containing reactant source 106, 108 may be a single source or multiple sources coupled to one or more of RC1-RC4. Each nitrogen-containing reactant source 106, 108 includes a vessel and a nitrogen-containing reactant. Exemplary nitrogen-containing reactants are also described below.

[0034] The multi-chamber reactor system 100 can also include one or more process reactant sources 110, 112. The process reactant sources 110, 112 can include vessels and process reactants therein. Exemplary process reactants include hydrogen-containing reactants such as hydrogen (H2), hydrogen-containing halides, NH3, mixtures of any combination of N2 / Ar / He-H2, and the like.

[0035] The controller 114 can be configured to move the substrate in the multi-chamber reactor system 100 and perform the deposition and treatment processes as described herein. For example, the controller 114 can be configured to provide the substrate in a first reaction chamber, perform a deposition cycle in the first reaction chamber, move the substrate to a second reaction chamber, and perform a treatment process in the second reaction chamber. As a specific example, the controller 114 can be configured to perform a deposition cycle in the first reaction chamber, the deposition cycle including pulsing a silicon precursor from the silicon precursor source 102 to the first reaction chamber RC1, providing a nitrogen-containing reactant from the nitrogen-containing reactant source 106 to the first reaction chamber RC1, and providing a deposition plasma power to form an activated species from the nitrogen-containing reactant. Additionally or alternatively, the controller 114 can be configured to perform a treatment process in the second reaction chamber RC2, the treatment process including providing a hydrogen-containing reactant from the hydrogen / treatment reactant source 110 to the second reaction chamber RC2 and providing treatment plasma power to form active species from the hydrogen-containing reactant. According to examples of these embodiments, the controller 114 is configured to perform a plurality of deposition cycles (e.g., about 1 to about 500 or about 1 to about 300) in the first reaction chamber RC1 before transferring the substrate to the second reaction chamber RC2. In some cases, the controller is further configured to transfer the substrate from the second reaction chamber RC2 to the first reaction chamber RC1.

[0036] According to a further embodiment of the present disclosure, the controller 114 can be further configured to increase the flow of the hydrogen-containing reactant after the substrate is in the second reaction chamber. The controller 114 can be further configured to decrease the flow of the hydrogen-containing reactant before the substrate is removed from the second reaction chamber. One or both of the increase rate and decrease rate can be relatively constant.

[0037] 2 illustrates a method 200 of depositing silicon nitride according to an additional embodiment of the present disclosure. The method 200 can be used to selectively deposit silicon nitride on a first material of a substrate surface relative to a second material on the substrate surface.

[0038] A selective deposition process as described herein may include depositing a greater amount of material on a first material relative to a second material on a substrate surface. For example, a selective process may result in a greater amount of silicon nitride formed on the first material relative to any silicon nitride formed on the second material. In some embodiments of the present disclosure, the selectivity of a process may be expressed as the ratio of the material (e.g., layer thickness) deposited on the first surface to the amount of material (e.g., layer thickness) formed on the combined first and second materials. For example, if 10 nm of silicon nitride is deposited on the first material and 1 nm of silicon nitride is deposited on the second material, the selective deposition process would be considered to have a selectivity of 91%. In some embodiments, the selectivity of the methods disclosed herein is greater than 50%, greater than 75%, greater than 80%, greater than 90%, greater than 95%, greater than 98%, greater than 99%, or even about 100%.

[0039] The method 200 includes providing a substrate in a reaction chamber (step 202), depositing silicon nitride on a surface of the substrate in the first reaction chamber to form deposited silicon nitride (step 204), moving the substrate to a second reaction chamber (step 206), and treating the deposited silicon nitride in the second reaction chamber to form treated silicon nitride (step 208).

[0040] During step 202, a substrate is provided in a reaction chamber of a reactor. Optionally, the reactor including the reaction chamber can be provided with a heater to activate the reaction by increasing the temperature of the substrate and / or one or more of the reactants / precursors.

[0041] During step 202, the substrate can be brought to a desired temperature and pressure for step 204. By way of example, the temperature (e.g., of the substrate or substrate support) in the reaction chamber can be from about 100° C. to about 600° C., or from about 300° C. to about 550° C. The pressure in the reaction chamber can be from about 0.5 to about 50, or from about 1 Torr to about 30 Torr.

[0042] As described above, the substrate provided during step 202 includes a surface comprising a first material and a second material. The first material can include, for example, silicon or a nitride (such as silicon nitride). The second material can include an oxide (such as a metal oxide or silicon oxide), or a metal. For example, the second material can include a metal oxide (such as a transition metal oxide, such as hafnium oxide).

[0043] During step 204, one or more deposition cycles are performed to deposit (e.g., selectively) silicon nitride on the surface of the substrate. In some cases, the deposited silicon nitride is initially flowable.

[0044] 3 illustrates an exemplary timing sequence 300 suitable for use with or as step 204. The timing sequence 300 includes deposition cycles m, treatment cycles n, and an overall cycle p. As shown, each deposition cycle m can include pulsing or providing a silicon precursor to the reaction chamber for a precursor pulse period (step 302), providing a reactant gas to the reaction chamber (step 304), and providing deposition plasma power for a deposition plasma period to form activated species from the reactant gas (step 306).

[0045] During step 302, a silicon precursor is pulsed into the reaction chamber. Exemplary silicon precursors suitable for use with step 302 / 204 include silicon precursors that react preferentially with OH end groups on the surface of the substrate. Such silicon precursors include silanes, silylamines, and aminosilanes. Specific examples include silane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetrasilane (Si4H 10 ), N(Si2H5)3, trisilylamine N(SiH3)3, N(SiMe3)(SiHMeNMe2)2, 2,2-disilyltrisilane (Si(SiH3)4), trisdimethylaminosilane (SiH(NMe2)3), bis(diethylamino)silane (SiH2(NEt2)2)(BEDAS), bis(tert-butylamino)silane (SiH2(NHtBu)2)(BTBAS), di-isopropylamido)silane (SiH3(NiPr2))(DIPAS), where Me represents a methyl group, Et represents an ethyl group, tBu represents a tert-butyl group, and iPr represents an isopropyl group. Alternatively, some precursors may preferentially react with activated cites containing -NH terminal bonds. Exemplary precursors that react with such activated silanes include halogenated silicon compounds, such as silicon compounds containing one or more of Cl and I. Specific examples include trichlorodisilane (Si2Cl3H3), pentachlorodisilane (Si2Cl5H), hexachlorodisilane (Si2Cl6), octachlorotrisilane (Si3Cl8), dechlorosilane (SiCl2H2), dimethyldichlorosilane (SiCl2Me2), tetrachlorosilane (SiCl4), tetraiodosilane (SiI4), triiodosilane (SiI3H), and deiodosilane (SiI2H2).

[0046] The flow rate of the silicon precursor with the carrier gas into the reaction chamber during step 302 can be about 200 sccm to about 10,000 sccm, or about 2,000 sccm to about 4,000 sccm. The duration of the silicon precursor pulse can be about 0.01 seconds to 60 seconds, 0.1 seconds to 60 seconds, or 0.1 seconds to 20 seconds.

[0047] A nitrogen-containing reactant is provided to the reaction chamber during step 304. Exemplary nitrogen-containing reactants include one or more of nitrogen (N2), NH3, N2-H2, or the like, alone or in any combination with one or more of argon (Ar), helium (He), or the like.

[0048] The flow rate of the nitrogen-containing reactant into the reaction chamber during step 304 can be from about 1000 sccm to about 50000 sccm, or from about 10000 sccm to about 30000 sccm. The duration of the reactant pulse can be from about 1 second to about 30 seconds, or from about 2 seconds to about 10 seconds, and / or can be continuous through one or more deposition cycles and / or through one or more deposition and treatment cycles p, as shown.

[0049] During step 306, a deposition plasma power is provided for a deposition plasma duration to form activated species from the reactant gas. The deposition plasma power can have a frequency of about 100 kHz to about 60 MHz, and / or about 12 MHz to about 14 MHz. The deposition plasma power can have a power of about 10 W to about 2000 W, or about 100 W to about 900 W for a substrate with a diameter of 300 mm, or can be 30 W to 500 W, or can have a similar power density for substrates of different cross-sectional dimensions, especially for CCP processes. The power level may be higher for IPC processes. The duration of step 306 can be about 0.05 seconds to about 60 seconds, or about 0.5 seconds to about 30 seconds.

[0050] During the transition period, i.e., after one or more deposition cycles of step 204 and before the treatment process of step 108, one or more gas flow rates and / or the reaction chamber pressure can be adjusted for the subsequent step. Additionally or alternatively, the pressure in the reaction chamber can be decreased during the transition period. Still further additionally or alternatively, the flow rate of process gases into the reaction chamber can be increased during the transition period.

[0051] 2, once a desired amount of silicon nitride has been (e.g., selectively) deposited, the substrate is moved to a second reaction chamber (e.g., RC2) during step 206. The substrate can be moved between reaction chambers using the substrate handler SH and / or controller 114, as described above. The reaction chambers (e.g., RC1-RC4, as described above) can form part of a module.

[0052] During step 208, a treatment process is performed. The treatment process includes treating the deposited silicon nitride in a second reaction chamber to form treated silicon nitride. According to examples of these embodiments, the treatment step 208 includes selectively removing the deposited silicon nitride.

[0053] With reference to FIG. 3 and timing sequence 300, an exemplary process step 208 includes providing a process gas to a reaction chamber (step 308) and providing a process plasma power for a process plasma period to form activated species from the process gas (step 310).

[0054] The temperature within the reaction chamber (e.g., of a susceptor within the reaction chamber) during step 208 can be as described above in connection with step 202, or can be higher (e.g., from about 50° C. to about 600° C., from about 200° C. to about 450° C., or from about 400° C. to about 550° C.). The pressure within the reaction chamber during step 208 can be from about 1 Torr to about 30 Torr, or from about 2.6 Torr to about 15 Torr.

[0055] According to embodiments of the present disclosure, the pressure in the reaction chamber during one or more deposition cycles (step 204) is greater than the pressure in the reaction chamber during the treatment process (step 208). For example, the pressure in the reaction chamber during one or more deposition cycles is at least 2.5 times or 10 times greater than the pressure in the reaction chamber during the treatment process.

[0056] The process gas used during step 208 / 308 can include a hydrogen-containing reactant. Exemplary hydrogen-containing reactants are described above. The flow rate of the process gas during treatment process step 208 / 308 can be from about 0.1 slm to about 2 slm, or from about 0.5 slm to about 1 slm. As shown, the timing sequence 300 can include an increase in flow rate (e.g., at a controlled and / or substantially constant rate) and / or a decrease in flow rate. The increase can occur after step 206 is completed, and the decrease step can occur before the substrate is transferred from RC2 to, for example, RC1, RC3, or another location.

[0057] During step 310, a treatment plasma power is provided for a treatment plasma period to form active species from the treatment gas. The treatment plasma power can have a frequency of about 100 kHz to about 60 MHz, and / or about 12 MHz to about 14 MHz. The treatment plasma power can have a power of about 10 W to about 2000 W, or about 100 W to about 900 W for a substrate with a diameter of 300 mm, or can be 600 W, or can have a similar power density for substrates of different cross-sectional dimensions. The duration of step 118 can be about 0.05 seconds to about 300 seconds, or about 0.5 seconds to about 60 seconds. According to an embodiment of the present disclosure, the deposition plasma power provided during step 306 is greater than the treatment plasma power provided during step 310. According to a further embodiment, the duration of the deposition plasma period is less than the duration of the treatment plasma period. For example, the deposition plasma period can be less than 50%, less than 25%, less than 20%, or less than 16% of the duration of the treatment plasma period.

[0058] 2, steps 204-208 can be repeated any number of times to selectively deposit silicon nitride on a first material relative to a second material. Additionally, as discussed above, step 204 can be repeated any number of times before proceeding to steps 206 or 208.

[0059] 4 illustrates a structure 400 according to an exemplary embodiment of the present disclosure. The structure 400 includes a substrate 402 including a first material 404 and a second material 406. As shown, the first material 404 and the second material 406 are formed on a surface of the substrate 402. Although illustrated with a horizontal surface, the substrate surface may additionally or alternatively include a vertical surface, and the first material 404 and the second material 406 may be oriented perpendicular to one another.

[0060] The substrate 402 may include any suitable material, such as a semiconductor material(s) typically used to form semiconductor devices. By way of example, the substrate 402 may be or include silicon, other Group IV semiconductor materials, Group III-V semiconductors, and / or Group II-VI semiconductors.

[0061] The first material 404 can include any of the first materials described above. For example, the first material 404 can include a silicon-containing material (such as silicon or silicon nitride). Similarly, the second material 406 can include any of the second materials described herein. By way of example, the second material 406 can include a metal or oxide, such as an elemental metal or alloy, a metal oxide (e.g., HfO2, ZrO2, or the like), or a silicon oxide (which may include carbon and / or nitrogen).

[0062] The structure 400 also includes silicon nitride 408 that has been selectively deposited over (e.g., in direct contact with) the first material 404 relative to silicon nitride 408 deposited over (e.g., in direct contact with) the second material 406 using methods and / or systems as described herein. In the illustrated example, the selectivity is not 100%, rather an amount of silicon nitride 408 can be formed over the second material 406. In other cases, the selectivity may be 100% or may be as described above.

[0063] 5 illustrates structure 500 after structure 400 has been exposed to a treatment process as described herein. As shown, structure 500 includes less (e.g., trace or unmeasurable) silicon nitride on second material 406 and remaining / treated silicon nitride 502 on first material 404.

[0064] 6 illustrates another multi-chamber reactor system 600 according to an embodiment of the present disclosure. The multi-chamber reactor system 600 can be similar to the multi-chamber reactor system 100 described above, except that the multi-chamber reactor system 600 includes at least one reaction chamber configured to perform an etching process.

[0065] In the illustrated embodiment, the multi-chamber reactor system 600 includes four reaction chambers RC1-RC4 and a substrate handler SH. The substrate handler SH can be as described above. The reaction chambers RC1-RC4 can be the same as or similar to RC1-RC4 described above in connection with FIG. 1.

[0066] The multi-chamber reactor system 600 can be used to deposit silicon nitride, for example, to fill recesses on a substrate surface. According to an example of the illustrated embodiment, the multi-chamber reactor system 600 includes one or more reaction chambers RC1-RC4 configured to deposit silicon nitride on a substrate surface to form conformally deposited silicon nitride, and a reaction chamber configured to topologically selectively etch the conformally deposited silicon nitride. For example, RC1 and RC3 can be configured for silicon nitride deposition, and RC2 and RC4 can be configured for selective etching. Use of the multi-chamber reactor system 600 allows for seamless filling of high aspect ratio features (e.g., recesses having aspect ratios of 0.5 or greater, or 0.5-20).

[0067] The multi-chamber reactor system 600 may further include precursor sources 602, 604 and / or reactant sources 606, 608 coupled to one or more reaction chambers, such as RC1 and RC3. The precursor sources 602, 604 may be silicon precursor sources as described above. Similarly, the reactant sources 606, 608 may be nitrogen-containing reactant sources as described above.

[0068] The multi-chamber reactor system 600 can further include etching sources 610, 612. Although illustrated as single sources, the etching sources 610, 612 can include two or more compounds in one or more containers. According to embodiments of the present disclosure, the etching sources 610, 612 include hydrogen and halogen compounds, which may include one or more compounds. For example, the etching sources 610, 612 can include a container and one or more of CxFy, NF3 contained within the container or containers.

[0069] As shown, the multi-chamber reactor system 600 can further include one or more (e.g., two) remote plasma units 616, 618. The remote plasma units can be configured to provide radicals derived from one or more etchants. As a specific example, the remote plasma units 616, 618 can form hydrogen and halogen (e.g., fluorine) radicals from one or more etchants. Additionally or alternatively, the reaction chamber configured to topologically selectively etch the conformally deposited silicon nitride can include a direct plasma device, as described below in connection with FIG. 14.

[0070] According to further examples of the present disclosure, the controller 614 is configured to provide a substrate in a first reaction chamber (e.g., using a substrate handler SH), to perform a deposition cycle in the first reaction chamber (e.g., RC1), to move the substrate to a second reaction chamber (e.g., RC2), and to perform a topologically selective etching process in the second reaction chamber. According to further exemplary embodiments, one or more of RC2, RC3, and / or RC4 can be used to perform processing steps as described herein.

[0071] As an example, the controller 614 can be configured to pulse a silicon precursor from a silicon precursor source to the first reaction chamber, provide a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber, and provide deposition plasma power to form activated species from the nitrogen-containing reactant, as described above. In the illustrated embodiment, such processes can be performed in RC1 and / or RC3.

[0072] A topologically selective etching process can be performed by providing a hydrogen and / or fluorine containing reactant, for example from a hydrogen and / or fluorine reactant source, and providing an etching plasma power to form activated species from the hydrogen and / or fluorine containing reactant.

[0073] According to various examples of these embodiments, the reaction chamber configured to perform the deposition cycle in the first reaction chamber can operate at a relatively low temperature, such as a temperature of about 200° C. to about 450° C. for ALD, or about 40° C. to about 150° C. for flowable deposition. In such cases, the reaction chamber can include, for example, an aluminum susceptor. According to further examples, the reaction chamber configured to perform the topologically selective etching process can be configured to operate at a relatively high temperature, such as a temperature of about 50° C. to about 200° C. or about 150° C. to about 450° C. In some cases, the reaction chambers can be configured to be substantially the same such that all reaction chambers of the multi-chamber reactor system 600 can operate at a maximum temperature.

[0074] 7 illustrates a method 700 of depositing silicon nitride according to an embodiment of the present disclosure. Method 700 includes providing a substrate (e.g., substrate 802) in a reaction chamber (e.g., in RC1 or RC3) (step 702), depositing conformal silicon nitride (step 704), moving the substrate to another reaction chamber (e.g., RC2 or RC4) (step 706), and topologically selectively etching the silicon nitride (step 708). As shown, method 700 can also include optional processing steps.

[0075] Step 702 can be the same as or similar to step 202 described above. For example, step 702 can include placing a substrate 802 (shown in FIG. 8) in RC1 using a substrate handler SH. Step 702 can also include bringing a reaction chamber (e.g., RC1) to a temperature and pressure as described above in connection with step 202. As shown, substrate 802 can include a feature 803, such as a recess.

[0076] Once the reaction chamber is at the desired temperature and pressure, silicon nitride 804 can be deposited (eg, conformally) during step 704, for example as described above in connection with step 204.

[0077] Once a desired amount of silicon nitride is deposited, during step 706, the substrate is moved to another reaction chamber (e.g., RC2) to perform a topologically selective etching process 708. During step 708, silicon nitride is topologically selectively removed near the top of the feature relative to the bottom of the feature to form, for example, topologically selectively etched silicon nitride 806. The topologically selective etching step 708 can include heating the substrate to a temperature as described above in connection with the topologically selective etching step. The topologically selective etching step 708 can include forming activated species including fluorine radicals and / or hydrogen radicals using a direct and / or remote plasma device. The pressure in the reaction chamber during step 708 can be from about 4 Pa ​​to about 50 Pa, or from about 40 Pa to about 400 Pa. The duration of step 708 can be from about 1 second to about 60 seconds, or from about 5 seconds to about 20 seconds.

[0078] As further shown, after one or more cycles of steps 704-708 are completed, the silicon nitride can be processed during step 710. Such processing can occur in one or more of RC1-RC4 or in a separate reaction chamber. Step 710 can be the same as or similar to step 208 described above in connection with FIG.

[0079] Steps 704-708 and / or steps 704-710 can be repeated until feature 803 is filled with silicon nitride 808, which may be treated or untreated.

[0080] 9 illustrates a scanning transmission electron microscope (STEM) image of a structure formed using method 700. As shown, the as-deposited silicon nitride can be deposited conformally. Conformally deposited silicon nitride may begin to form seams where layers of silicon nitride meet within the feature / recess. After the etching step, the silicon nitride is preferentially etched near the top of the feature relative to the bottom of the feature, allowing for a void-free, seamless filling of the feature.

[0081] 10 illustrates a STEM image of a structure formed using method 700 having a process step 710. Specifically, process step 710 is performed using fluorine and hydrogen radicals (e.g., generated from an etchant such as those described above and using a remote plasma), and process step 710 is performed as described above in connection with FIGS.

[0082] 11 illustrates another multi-chamber reactor system 1100 according to an embodiment of the present disclosure. The multi-chamber reactor system 1100 can be similar to the multi-chamber reactor systems 100, 600 described above, except that the multi-chamber reactor system 1100 includes a reaction chamber configured to cure the deposited silicon nitride.

[0083] According to an embodiment of the present disclosure, the multi-chamber reactor system 1100 includes a first reaction chamber RC1 configured to deposit silicon nitride on a surface of a substrate to form a deposited silicon nitride, a second reaction chamber RC2 configured to harden the deposited silicon nitride, and a controller. In the illustrated embodiment, the multi-chamber reactor system 1100 further includes a third reaction chamber RC3 and a fourth reaction chamber RC4. RC3 can be the same or similar to RC1 and can be coupled to a shared reactant source and / or precursor source. RC2 and RC4 can be the same or similar and can be coupled to a shared etchant source and / or other gas source. The multi-chamber reactor system 1100 also includes a substrate handler SH, which can be the same or similar to those described above in connection with the other multi-chamber reactor systems described herein and can operate as described above.

[0084] According to an embodiment of the present disclosure, RC1 is configured to deposit flowable silicon nitride. The temperature in RC1 during deposition of the flowable silicon nitride can be less than 100° C. or less than 75° C. RC1 can be coupled to a silicon precursor source 1102, such as the silicon precursor source described above. RC1 can also be coupled to a reactant source 1106, such as the nitrogen-containing reactant source described above. RC3 can similarly be coupled to a precursor source 1104 and a reactant source 1108, which can be or include the same precursors or reactants as the precursor source 1102 and the reactant source 1106.

[0085] According to a further embodiment, the temperature in RC2 is higher than the temperature in RC1. For example, the temperature in RC2 can be greater than 125° C., greater than 150° C., or greater than 550° C. Running different reaction chambers of a process module at different temperatures mitigates temperature ramp-up and / or ramp-down times while enabling desired process conditions.

[0086] In some configurations, one of the reaction chambers, for example RC4, can be configured to perform a topologically selective etch as described herein. In the illustrated embodiment, RC2 and / or RC4 can be coupled to an etchant source 1110, 1112. Additionally or alternatively, one or more of RC2, RC4 can be configured to perform a curing step. Exemplary curing steps can be or include one or more of plasma curing (e.g., H2, H2-He / Ar / N2 (gases excited by plasma with up to 600 W of power for up to 60 seconds)), vacuum ultraviolet radiation curing, ultraviolet radiation, and / or heat (e.g., temperatures above 5450°C, 500°C, 525°C, or 550°C, or other curing temperatures described herein). Curing devices and / or sources 1116, 1118 can be coupled to RC2 and / or RC4 and / or can be at least partially integrated with RC2 and / or RC4.

[0087] The controller 1114 can be configured to perform deposition, curing, and etching processes according to embodiments of the present disclosure. For example, the controller 1114 can be configured to cause the handler SH to provide a substrate in a first reaction chamber RC1, to perform a deposition cycle in the first reaction chamber RC1, to move the substrate to a second reaction chamber RC2 using the substrate handler SH, and to perform a curing process in the second reaction chamber RC2.

[0088] The deposition cycle performed in RC1 can be the same as or similar to the silicon nitride deposition process described above in connection with Figures 1 and 6. For example, a deposition cycle can include pulsing a silicon precursor from a silicon precursor source into the first reaction chamber RC1, providing a nitrogen-containing reactant from a nitrogen-containing reactant source into the first reaction chamber RC1, and providing a deposition plasma power to form active species from the nitrogen-containing reactant, thereby forming a (e.g., flowable) deposited silicon nitride.

[0089] The controller 1114 can then move the substrate to RC2 to perform a curing process. As mentioned above, the curing process can include one or more of vacuum ultraviolet radiation, ultraviolet radiation, plasma, and heating, which can be performed in, for example, RC2 and / or RC4.

[0090] The controller 1114 can then cause an etching process to be performed. The etching process can be performed, for example, in RC2 and / or RC4. In some cases, the etching process can be performed in the first reaction chamber RC3. The etching process can be as described above in connection with FIG. 6.

[0091] 12 illustrates a method 1200 of depositing silicon nitride according to yet a further embodiment of the present disclosure. The method 1200 can be carried out using the multi-chamber reactor system 1100, for example.

[0092] As shown, method 1200 includes providing a substrate in a first reaction chamber (1202), depositing (e.g., flowable) silicon nitride on a surface of the substrate in the first reaction chamber to form deposited silicon nitride, moving the substrate to a second reaction chamber, curing the deposited silicon nitride in the second reaction chamber to form hardened silicon nitride, and etching a portion of the hardened silicon nitride. These steps can be repeated multiple times to fill features, such as recesses, on a surface of the substrate. Method 1200 can be used to fill recesses from the bottom up, or to provide a bottom-thick fill, or to provide a bottom-only fill.

[0093] As described above, in some cases, the etching step and the curing step can be performed in the same reaction chamber, e.g., RC2. In other cases, the etching step is performed in a third reaction chamber RC3. The process module can include RC1-RC4 as described above. In such cases, the fourth reaction chamber RC4 can be used for deposition, etching, or curing as described herein.

[0094] Steps 1202-1206 and 1210 can be the same as or similar to steps 202-208 (or 202-206 and 708) described above. Curing step 1208 can be as described above. According to an embodiment of the present disclosure, step 1204 includes depositing an initially flowable silicon nitride.

[0095] 13 illustrates a structure 1302 including a substrate 1304 that includes a feature 1306, such as a recess, and initially flowable silicon nitride 1308 that is deposited within the feature 1306. As shown, after deposition of the silicon nitride, the substrate 1304 is moved to another reaction chamber (e.g., RC2) and a curing step is performed to form a structure 1314 that includes the substrate 1304 and hardened silicon nitride 1310. The curing step can be or can include any of the curing processes described above.

[0096] Then, in the same reaction chamber or in a separate reaction chamber, a portion of the (hardened) silicon nitride is etched to form structure 1316 , which includes substrate 1304 and remaining silicon nitride 1312 .

[0097] 14, a reactor system 1400 according to an exemplary embodiment of the present disclosure is illustrated. The reactor system 1400 can be used to perform one or more steps or sub-steps as described herein and / or to form one or more device structures or portions thereof as described herein.

[0098] The reactor system 1400 includes a pair of conductive plate electrodes 1414, 1418 in parallel and facing relation within the interior 1401 (reaction zone) of the reactor chamber 1402. A plasma can be excited in the reaction chamber 1402, for example, by applying plasma power from a plasma power supply 1408 to one electrode (e.g., electrode 1418) and electrically grounding the other electrode (e.g., electrode 1414). A temperature regulator 1403 can be provided in the lower stage 1414 (lower electrode), and the temperature of a substrate 1422 placed thereon can be maintained at a desired temperature, such as those described above. The electrode 1418 can function as a gas distribution device, such as a shower plate or showerhead. Precursor gases, reactant gases, and carrier or inert gases (if present), or the like, can be introduced into the reaction chamber 1402 using one or more gas lines (e.g., reactant gas line 1404 and precursor gas line 1406, which are connected to reactant and precursor sources, respectively). For example, an inert gas and reactants (e.g., as described above) can be introduced into the reaction chamber 1402 using line 1404, and / or a precursor and carrier gas (e.g., an inert gas, as described above) can be introduced into the reaction chamber 1402 using line 1406. Although illustrated with two inlet gas lines 1404, 1406, the reactor system 1400 can include any suitable number of gas lines.

[0099] In the reaction chamber 1402, a circular duct 1420 with an exhaust line 1421 can be provided, through which the gas in the interior 1401 of the reaction chamber 1402 can be exhausted to the exhaust source 1410. Additionally, the transfer chamber 1423 can be provided with a seal gas line 1429 for introducing a seal gas into the interior 1401 of the reaction chamber 1402 via the interior (transfer zone) of the transfer chamber 1423, and a separation plate 1425 for separating the reaction zone 1401 and the transfer chamber 1423 (the gate valve through which the substrate is transferred into or out of the transfer chamber 1423 is omitted from this figure). The transfer chamber 1423 can also be provided with an exhaust line 1427 connected to the exhaust source 1410. In some embodiments, a continuous flow of carrier gas into the reaction chamber 1402 can be achieved using a flow path system (FPS).

[0100] The reactor system 1400 can include one or more controllers 1412 programmed or otherwise configured to cause one or more method steps to be performed as described herein. As would be understood by one of skill in the art, the controller 1412 is coupled to various power sources, heating systems, pumps, robots, and gas flow controllers or valves of the reactor. As an example, the controller 1412 can be configured to control gas flows of precursors, reactants, and inert gases into at least one of the one or more reaction chambers to form a layer on the surface of the substrate. The controller 1412 can be further configured to provide power to form a plasma, for example, in the reaction chamber 1402. The controller 1412 can also be configured to perform additional or alternative steps as described herein. As an example, the controller 1412 can be configured to perform steps of treating, etching, and / or curing the deposited material, as described above.

[0101] The controller 1412 can include electronic circuitry and software for selectively operating the valves, manifolds, heaters, pumps, and other components included in the system 1400. Such circuits and components operate to introduce precursor, reactant, and purge gases from their respective sources. The controller 1412 can control the timing of gas pulse sequences, the temperature of the substrate and / or reaction chamber, the pressure within the reaction chamber, and various other operations to provide proper operation of the system 1400.

[0102] The controller 1412 can include control software that electrically or pneumatically controls valves to control the flow of precursor, reactant, and / or purge gases into and out of the reaction chamber 1402. The controller 1412 can include modules, such as software or hardware components (e.g., FPGAs or ASICs) that perform certain tasks. The modules can advantageously be configured to reside on an addressable storage medium of the control system and can be configured to execute one or more processes.

[0103] In some embodiments, a dual chamber reactor (two sections or compartments for processing substrates located near each other) can be used, and reactant gases and noble gases can be supplied through shared lines, while precursor gases are supplied through non-shared lines.

[0104] During operation of the system 1400, a substrate, such as a semiconductor wafer, is transferred, for example, from the substrate handling area 1423 to the reaction zone 1401. Once the substrate is transferred to the reaction zone 1401, one or more gases, such as precursors, reactants, carrier gases, and / or purge gases, are introduced into the reaction chamber 1402.

[0105] The exemplary embodiments of the present disclosure described above are merely examples of embodiments of the present invention, as defined by the appended claims and their legal equivalents, and therefore do not limit the scope of the present invention. Any equivalent embodiments are intended to be within the scope of the present invention. Indeed, various modifications of the present disclosure, in addition to those shown and described herein, such as alternative useful combinations of the described elements, may become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. 1. A multi-chamber reactor system comprising: a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form a deposited silicon nitride; a second reaction chamber configured to process the deposited silicon nitride; A controller, configured to provide the substrate in a first reaction chamber; configured to perform a deposition cycle in the first reaction chamber, the deposition cycle comprising: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber; providing a deposition plasma power to form activated species from the nitrogen-containing reactant; configured to move the substrate to the second reaction chamber; configured to perform a treatment process in the second reaction chamber, the treatment process comprising: providing a hydrogen-containing reactant from a hydrogen reactant source to the second reaction chamber; providing a treatment plasma power to form activated species from the hydrogen-containing reactant; A controller; A multi-chamber reactor system comprising:

2. 2. The multi-chamber reactor system of claim 1, wherein the controller is configured to perform a plurality of the deposition cycles in the first reaction chamber before moving the substrate to the second reaction chamber.

3. 3. The multi-chamber reactor system according to claim 1 or 2, wherein the controller is further configured to move the substrate from the second reaction chamber to the first reaction chamber.

4. a third reaction chamber configured to deposit additional silicon nitride on a surface of the treated silicon nitride; 10. The multi-chamber reactor system of claim 1, further comprising a fourth reaction chamber configured to process the additional silicon nitride.

5. 5. The multi-chamber reactor system of claim 4, wherein the controller is configured to move the substrate from the first reaction chamber to the second reaction chamber, from the second reaction chamber to the third reaction chamber, and from the third reaction chamber to the fourth reaction chamber.

6. 10. The multi-chamber reactor system of claim 1, wherein the controller is further configured to increase a flow of the hydrogen-containing reactant after the substrate enters the second reaction chamber.

7. 7. The multi-chamber reactor system of claim 6, wherein the controller is further configured to reduce the flow of the hydrogen-containing reactant before the substrate is removed from the second reaction chamber.

8. 1. A method for depositing silicon nitride comprising the steps of: Providing a substrate in a first reaction chamber; depositing silicon nitride on a surface of the substrate in the first reaction chamber to form a deposited silicon nitride; treating the deposited silicon nitride in a second reaction chamber to form a treated silicon nitride; the treating step includes selectively removing the deposited silicon nitride and moving the substrate to the second reaction chamber; The method, wherein the first reaction chamber and the second reaction chamber form part of a module.

9. 9. The method of claim 8, wherein a nitrogen-containing reactant is supplied continuously during one or more cycles including depositing the silicon nitride and treating the deposited silicon nitride.

10. 10. The method of claim 8 or 9, wherein the deposited silicon nitride is initially flowable.

11. 1. A multi-chamber reactor system comprising: a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form a conformally deposited silicon nitride; a second reaction chamber configured to topologically selectively etch the conformally deposited silicon nitride; A controller, configured to provide the substrate in the first reaction chamber; configured to perform a deposition cycle in the first reaction chamber, the deposition cycle comprising: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber; providing a deposition plasma power to form activated species from the nitrogen-containing reactant; configured to move the substrate to the second reaction chamber; configured to perform a topologically selective etching process in the second reaction chamber, the topologically selective etching process comprising: providing a hydrogen and / or fluorine containing reactant from a hydrogen and / or fluorine reactant source; providing an etching plasma power to form activated species from the hydrogen and / or the fluorine-containing reactants; A controller; A multi-chamber reactor system comprising:

12. 12. The multi-chamber reactor system of claim 11, wherein the active species comprises fluorine radicals and hydrogen radicals.

13. 1. A multi-chamber reactor system comprising: a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form a deposited silicon nitride; a second reaction chamber configured to harden the deposited silicon nitride; A controller, configured to provide the substrate in the first reaction chamber; configured to perform a deposition cycle in the first reaction chamber, the deposition cycle comprising: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber; providing a deposition plasma power to form activated species from the nitrogen-containing reactant; configured to move the substrate to the second reaction chamber; configured to perform a curing process in the second reaction chamber, the curing process comprising: providing one or more of vacuum ultraviolet radiation, ultraviolet radiation, a plasma, and heating; a controller configured to perform the etching process; and A multi-chamber reactor system comprising:

14. 14. The multi-chamber reactor system of claim 13, further comprising a third reaction chamber configured to carry out said etching process.

15. 14. The multi-chamber reactor system of claim 13, wherein the etching process is carried out in the second reaction chamber.

16. 1. A method for depositing silicon nitride comprising the steps of: Providing a substrate in a first reaction chamber; depositing silicon nitride on a surface of the substrate in the first reaction chamber to form a deposited silicon nitride; moving the substrate to a second reaction chamber; curing the deposited silicon nitride in the second reaction chamber to form a hardened silicon nitride; and etching a portion of the hardened silicon nitride. The method, wherein the first reaction chamber and the second reaction chamber form part of a module.

17. The method of claim 16 , wherein the step of etching is carried out in the second reaction chamber.

18. The method of claim 16 , wherein the step of etching is carried out in a third reaction chamber.

19. The method according to any of claims 16 to 18, wherein the temperature in the first reaction chamber during the step of depositing silicon nitride is less than 75°C.

20. The method according to any of claims 16 to 18, wherein the temperature in the second reaction chamber during the step of hardening silicon nitride is greater than 550°C.

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