Electro-optical device and electronic apparatus

Abstract

To provide an electro-optical device and an electronic apparatus that can suppress characteristic variation due to an incidence of light to the temperature detection element.SOLUTION: An electro-optical device includes a display region having a plurality of pixels and a peripheral region located outside the display region. The electro-optical device comprises a first substrate, a second substrate, and an electro-optical layer arranged between the first substrate and the second substrate and having optical characteristics that change according to an electric field. The first substrate includes: a substrate; a plurality of pixel electrodes provided in the display region; a temperature detection element provided in the peripheral region; a first light shielding film provided in the peripheral region and overlapping the temperature detection element in plan view; and a second light shielding film provided in the peripheral region and overlapping the temperature detection element in the plan view. The second light shielding film, the temperature detection element, and the first light shielding film are arranged in this order from the substrate.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to an electro-optical device and an electronic device. [Background technology]

[0002] 2. Description of the Related Art Electronic devices such as projectors use electro-optical devices such as liquid crystal display devices that can change optical characteristics for each pixel. One known example of such electro-optical devices is the electro-optical device described in Patent Document 1.

[0003] The electro-optical device described in Patent Document 1 includes a first substrate having a pixel region including a plurality of pixels, a second substrate having a frame-shaped light-shielding film, and a temperature detection element. The temperature detection element is provided on the first substrate. The temperature detection element is provided at a position overlapping with the light-shielding film in a plan view. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-18367 Summary of the Invention [Problem to be solved by the invention]

[0005] However, since the first and second substrates are separated from each other, it is difficult for the light-shielding film provided on the second substrate to prevent light from entering the temperature detection element provided on the first substrate. Therefore, with the conventional configuration, it is difficult to prevent characteristic fluctuations caused by light entering the temperature detection element. [Means for solving the problem]

[0006] One embodiment of the electro-optical device of the present invention is an electro-optical device including a display area having a plurality of pixels and a peripheral area located outside the display area, and comprises a first substrate, a second substrate, and an electro-optical layer disposed between the first substrate and the second substrate, the optical properties of which change in response to an electric field, the first substrate comprising a substrate, a plurality of pixel electrodes provided in the display area, a temperature detection element provided in the peripheral area, a first light-shielding film provided in the peripheral area and overlapping the temperature detection element in a planar view, and a second light-shielding film provided in the peripheral area and overlapping the temperature detection element in a planar view, the second light-shielding film, the temperature detection element, and the first light-shielding film being arranged in this order from the substrate. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view of an electro-optical device according to a first embodiment. [Diagram 2] 2 is a cross-sectional view taken along the line AA of the electro-optical device shown in FIG. [Diagram 3] 2 is an equivalent circuit diagram showing an electrical configuration of the first substrate in FIG. 1. [Figure 4] FIG. 3 is a plan view of the first substrate in FIG. 2. [Diagram 5] 5 is a circuit diagram of the temperature detection circuit shown in FIG. 4. [Figure 6] 3 is a cross-sectional view of a portion of the first substrate shown in FIG. 2. [Figure 7] 7 is a diagram showing a planar arrangement of the first light-shielding film, the second light-shielding film, and the temperature detection element in FIG. 6. FIG. [Figure 8] FIG. 11 is a cross-sectional view of a portion of a first substrate in a second embodiment. [Figure 9] FIG. 11 is a cross-sectional view of a portion of a first substrate in a third embodiment. [Figure 10] 10 is a diagram showing a planar arrangement of a first light-shielding film, a second light-shielding film, and a temperature detection element in FIG. 9. FIG. [Figure 11] FIG. 13 is a cross-sectional view of a portion of a first substrate in a fourth embodiment. [Figure 12] FIG. 1 is a perspective view showing a personal computer as an example of an electronic device. [Figure 13]FIG. 1 is a plan view showing a smartphone as an example of an electronic device. [Figure 14] FIG. 1 is a schematic diagram illustrating a projector as an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Note that the dimensions or scale of each part in the drawings may differ from the actual dimensions, and some parts are shown diagrammatically to facilitate understanding. Furthermore, the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description to the effect that the present invention is limited thereto.

[0009] 1. Electro-optical device A. First embodiment A1.Basic configuration FIG. 1 is a plan view of an electro-optical device 100 according to a first embodiment. FIG. 2 is a cross-sectional view of the electro-optical device 100 shown in FIG. 1 along line AA. In the following, for convenience of explanation, the X-axis, Y-axis, and Z-axis, which are orthogonal to each other, are appropriately used. In addition, one direction along the X-axis is denoted as the X1 direction, and the direction opposite to the X1 direction is denoted as the X2 direction. Similarly, one direction along the Y-axis is denoted as the Y1 direction, and the direction opposite to the Y1 direction is denoted as the Y2 direction. One direction along the Z-axis is denoted as the Z1 direction, and the direction opposite to the Z1 direction is denoted as the Z2 direction.

[0010] In addition, in this specification, "element β on element α" means that element β is located above element α. Therefore, "element β on element α" includes not only the case where element β is in direct contact with element α, but also the case where element α and element β are separated. Furthermore, "electrical connection" between element α and element β includes a configuration in which element α and element β are electrically connected by being directly joined, as well as a configuration in which element α and element β are indirectly electrically connected via another conductor. Furthermore, "substantially equal" includes cases in which there is a difference on the order of manufacturing error and measurement error, in addition to cases in which they are strictly equal.

[0011] The electro-optical device 100 shown in Fig. 1 and Fig. 2 is a transmissive electro-optical device of an active matrix driving system. The electro-optical device 100 has a first substrate 2, a second substrate 3, a frame-shaped seal member 4, and a liquid crystal layer 5. As shown in Fig. 2, the first substrate 2, the liquid crystal layer 5, and the second substrate 3 are arranged in this order in the Z1 direction. Note that a "plan view" refers to a view from the Z1 direction or the Z2 direction in which these overlap. Also, although the shape of the electro-optical device 100 shown in Fig. 1 in a plan view is a rectangle, it may be a polygon other than a rectangle or a circle.

[0012] As shown in Fig. 2, the first substrate 2 has a substrate 21, a laminate 22, a plurality of pixel electrodes 25, a plurality of dummy pixel electrodes 25d, a peripheral electrode 26, and an alignment film 29. The substrate 21, the laminate 22, the plurality of pixel electrodes 25, and the alignment film 29 are laminated in this order in the Z1 direction. Note that "translucency" means transparency to visible light, and preferably means that the transmittance of visible light is 50% or more. In addition, as will be described in detail later, as shown in Fig. 1, the first substrate 2 has a temperature detection circuit 60.

[0013] 2 is a flat plate having light-transmitting and insulating properties, and is made of, for example, a glass substrate or a quartz substrate. The laminate 22 has light-transmitting properties and includes a plurality of insulating films. In addition, the laminate 22 is provided with various wirings and the like.

[0014] The pixel electrodes 25, the dummy pixel electrodes 25d, and the peripheral electrode 26 are disposed on the laminate 22. The pixel electrodes 25 apply an electric field to the liquid crystal layer 5. Although the dummy pixel electrodes 25d do not contribute to display, they have the same configuration as the pixel electrodes 25 and are driven and controlled in the same manner as the pixel electrodes 25. For example, the dummy pixel electrodes 25d are used for noise reduction of image signals written to the pixel electrodes 25. The peripheral electrode 26 is an electrode for ion trapping that traps ionic impurities in the liquid crystal layer 5. Each of the pixel electrodes 25, the dummy pixel electrodes 25d, and the peripheral electrode 26 includes a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), and FTO (Fluorine-doped tin oxide). The pixel electrodes 25, the dummy pixel electrodes 25d, and the peripheral electrode 26 are formed collectively by etching a conductive film including the transparent conductive material.

[0015] The alignment film 29 has light-transmitting properties and insulating properties. The alignment film 29 aligns liquid crystal molecules in the liquid crystal layer 5. The alignment film 29 is disposed so as to cover the plurality of pixel electrodes 25. The alignment film 29 is made of a material such as polyimide and silicon oxide.

[0016] The second substrate 3 is disposed opposite the first substrate 2. The second substrate 3 has a substrate 31, an inorganic insulating layer 32, a common electrode 33, and an alignment film 34. Although not shown, the second substrate 3 has a light-shielding partition surrounding the plurality of pixel electrodes 25 in a plan view. Note that "light-shielding property" refers to light-shielding property against visible light, and preferably refers to a visible light transmittance of less than 50%, and more preferably refers to 10% or less.

[0017] The substrate 31, the inorganic insulating layer 32, the common electrode 33, and the alignment film 34 are laminated in this order in the Z2 direction. The substrate 31 is a flat plate having translucency and insulation, and is composed of, for example, a glass substrate or a quartz substrate. The inorganic insulating layer 32 has translucency and insulation, and is formed of, for example, an inorganic material containing silicon, such as silicon oxide. The common electrode 33 is a counter electrode disposed with respect to the plurality of pixel electrodes 25 via the liquid crystal layer 5. The common electrode 33 is used to apply an electric field to the liquid crystal layer 5. The common electrode 33 has translucency and conductivity. The common electrode 33 includes, for example, a transparent conductive material, such as ITO, IZO, and FTO. The alignment film 34 has translucency and insulation. The alignment film 34 aligns the liquid crystal molecules of the liquid crystal layer 5. The material of the alignment film 34 is, for example, polyimide, silicon oxide, or the like.

[0018] The seal member 4 is disposed between the first substrate 2 and the second substrate 3. The seal member 4 is formed using an adhesive or the like containing various curable resins such as epoxy resin. The seal member 4 may contain a gap material made of an inorganic material such as glass.

[0019] The liquid crystal layer 5 is disposed within the region surrounded by the first substrate 2, the second substrate 3, and the seal member 4. The liquid crystal layer 5 is an electro-optical layer whose optical properties change in response to an electric field. The liquid crystal layer 5 contains liquid crystal molecules having positive or negative dielectric anisotropy. The orientation of the liquid crystal molecules changes in response to a voltage applied to the liquid crystal layer 5.

[0020] As shown in FIG. 3, a plurality of scanning line driving circuits 11, a signal line driving circuit 12, and a plurality of external terminals 13 are arranged on the first substrate 2. Some of the plurality of external terminals 13 are connected to wiring (not shown) drawn from the scanning line driving circuit 11 or the signal line driving circuit 12. The plurality of external terminals 13 also include a terminal to which a constant potential Vcom is applied. The terminal is electrically connected to the common electrode 33 of the second substrate 3 via wiring and a conductive material (not shown). Thus, the constant potential Vcom is supplied to the common electrode 33. The plurality of external terminals 13 also include a terminal 13a and a terminal 13b. The terminal 13a is electrically connected to the temperature detection circuit 60 via a wiring 651, and the terminal 13b is electrically connected to the temperature detection circuit 60 via a wiring 652.

[0021] The electro-optical device 100 has a display region A10 for displaying an image, and a peripheral region A20 located outside the display region A10 in a planar view. A plurality of pixels P arranged in a matrix are provided in the display region A10. A plurality of pixel electrodes 25 are arranged in a one-to-one correspondence with the plurality of pixels P. The aforementioned common electrode 33 is provided in common to the plurality of pixels P. The peripheral region A20 surrounds the display region A10 in a planar view. A temperature detection circuit 60, a scanning line driving circuit 11, and a signal line driving circuit 12 are arranged in the peripheral region A20.

[0022] In this embodiment, the electro-optical device 100 is a transmissive type. Specifically, as shown in Fig. 2, after light LL enters the second substrate 3, it is modulated while it is being emitted from the first substrate 2, thereby displaying an image. Note that the light that enters the first substrate 2 may be modulated while it is being emitted from the second substrate 3, thereby displaying an image.

[0023] The electro-optical device 100 is also applied to a display device that performs color display, such as a personal computer and a smartphone, which will be described later. When applied to such a display device, a color filter is appropriately used for the electro-optical device 100. The electro-optical device 100 is also applied to a projection-type projector, which will be described later. In this case, the electro-optical device 100 functions as a light valve. In this case, the color filter is omitted for the electro-optical device 100.

[0024] A2. Electrical configuration of the first board 2 Fig. 3 is an equivalent circuit diagram showing the electrical configuration of the first substrate 2 in Fig. 1. As shown in Fig. 3, the first substrate 2 has a plurality of transistors 23, n scanning lines 241, m signal lines 242, and n constant potential lines 243. n and m are each an integer of 2 or more. The transistors 23 are arranged corresponding to each intersection of the n scanning lines 241 and the m signal lines 242. Each transistor 23 is, for example, a TFT (Thin Film Transistor) that functions as a switching element. Each transistor 23 includes a gate, a source, and a drain.

[0025] Each of the n scanning lines 241 extends in the X1 direction, and the n scanning lines 241 are arranged at equal intervals in the Y2 direction. Each of the n scanning lines 241 is electrically connected to the gates of the corresponding transistors 23. The n scanning lines 241 are electrically connected to the scanning line driving circuit 11 shown in Fig. 1. Scanning signals G1, G2, ..., and Gn are supplied line-sequentially to the 1st to nth scanning lines 241 from the scanning line driving circuit 11.

[0026] Each of the m signal lines 242 shown in Fig. 3 extends in the Y1 direction, and the m signal lines 242 are arranged at equal intervals in the X1 direction. Each of the m signal lines 242 is electrically connected to the sources of the corresponding transistors 23. The m signal lines 242 are electrically connected to the signal line drive circuit 12 shown in Fig. 1. Image signals S1, S2, ..., and Sm are supplied in parallel to the 1 to m signal lines 242 from the signal line drive circuit 12.

[0027] 3 are electrically insulated from each other and arranged in a lattice pattern in plan view. An area surrounded by two adjacent scanning lines 241 and two adjacent signal lines 242 corresponds to a pixel P. A transistor 23, a pixel electrode 25, and a capacitance element 24 are provided for each pixel P. The pixel electrodes 25 are provided in a one-to-one correspondence with the transistors 23. Each pixel electrode 25 is electrically connected to the drain of the corresponding transistor 23.

[0028] Each of the n constant potential lines 243 extends in the X1 direction, and the n constant potential lines 243 are arranged at equal intervals in the Y2 direction. The n constant potential lines 243 are electrically insulated from the n scanning lines 241 and the m signal lines 242, and are arranged at intervals from these lines. A constant potential Vcom is applied to each of the constant potential lines 243. Each of the n constant potential lines 243 is electrically connected to one of two electrodes of a corresponding capacitance element 24. Each capacitance element 24 is a capacitance element for holding the potential of a pixel electrode 25. The capacitance element 24 is provided in a one-to-one relationship with a transistor 23. The other of the two electrodes of each capacitance element 24 is electrically connected to the corresponding pixel electrode 25. Therefore, a constant potential Vcom is applied to one electrode of the capacitance element 24, and the other electrode is electrically connected to the drain of the transistor 23.

[0029] When the scanning signals G1, G2, ..., and Gn are successively activated and n scanning lines 241 are successively selected, the transistor 23 connected to the selected scanning line 241 is turned on. Then, image signals S1, S2, ..., and Sm having a magnitude corresponding to the gradation to be displayed are taken into the pixel P corresponding to the selected scanning line 241 via m signal lines 242 and applied to the pixel electrode 25. As a result, a voltage corresponding to the gradation to be displayed is applied to the liquid crystal capacitance formed between the pixel electrode 25 and the common electrode 33 in FIG. 2, and the orientation of the liquid crystal molecules changes according to the applied voltage. In addition, the applied voltage is held by the capacitance element 24. Such a change in the orientation of the liquid crystal molecules modulates light, enabling gradation display.

[0030] A3. Planar configuration of first substrate 2 FIG. 4 is a plan view of the first substrate 2 shown in FIG. 1. As shown in FIG. 4, a plurality of pixel electrodes 25 are arranged in a matrix in the display region A10. A plurality of dummy pixel electrodes 25d are arranged in the peripheral region A20 so as to surround the display region A10 in a plan view. Note that FIG. 4 illustrates a portion of the plurality of pixel electrodes 25 and the plurality of dummy pixel electrodes 25d. Also, in the peripheral region A20, the peripheral electrode 26 is arranged so as to surround the plurality of dummy pixel electrodes 25d in a plan view. In the illustrated example, the planar shape of the peripheral electrode 26 is a rectangular frame shape. Note that in FIG. 4, the peripheral electrode 26 is hatched so that the arrangement of the peripheral electrode 26 can be seen.

[0031] Furthermore, a temperature detection circuit 60 is disposed in the peripheral region A20. The temperature detection circuit 60 includes a temperature detection element 6 and an electrostatic protection circuit 65. The temperature detection element 6 and the electrostatic protection circuit 65 are disposed, for example, in the above-mentioned laminate 22. Furthermore, the temperature detection element 6 overlaps the peripheral electrode 26 in a plan view. The temperature detection element 6 is disposed in a lower layer of the laminate 22 than the peripheral electrode 26.

[0032] A4. Electrical configuration of the temperature detection circuit 60 Fig. 5 is a circuit diagram of the temperature detection circuit 60 shown in Fig. 4. As described above, the temperature detection circuit 60 includes the temperature detection element 6 and the electrostatic protection circuit 65. As shown in Fig. 5, the temperature detection element 6 and the electrostatic protection circuit 65 are electrically connected in parallel.

[0033] The temperature detection element 6 is a diode. For example, the diode is a PN junction diode in which a p-type semiconductor and an n-type semiconductor are connected. The temperature detection element 6 includes an input side 61 and an output side 62. For example, the p-type semiconductor is the input side 61, and the n-type semiconductor is the output side 62. In addition, a wiring 651 extending from a terminal 13a is connected to one end of the temperature detection element 6, and a wiring 652 extending from a terminal 13b is connected to the other end. For example, the terminal 13a is an anode terminal, and the terminal 13b is a cathode terminal.

[0034] In the illustrated example, the temperature detection element 6 includes one diode, but may include multiple diodes to increase the detection sensitivity of temperature changes. Also, the temperature detection element 6 may be in the form of, for example, a diode-connected transistor.

[0035] The electrostatic protection circuit 65 is a circuit for protecting the temperature detection element 6 from electrostatic damage. The electrostatic protection circuit 65 includes resistors R1, R2, R3, and R4, capacitors C1 and C2, and a transistor 650. The transistor 650 is, for example, an n-type field effect transistor. For example, the source of the transistor 650 is connected to a wiring 652, and the drain is connected to a wiring 651. The gate of the transistor 650 is connected to a gate wiring 653. The resistors R1 and R2 are provided in the middle of the wiring 651. The resistor R3 is provided in the middle of the wiring 652. The resistor R4 is provided in the middle of the gate wiring 653. The gate wiring 653 and the resistor R4 function as a connection part that turns off the transistor 650 in a static state. In a static state, the gate-source voltage of the transistor 650 is 0V, and the transistor 650 is off. In addition, a capacitor C1 is connected between the gate wiring 653 and the wiring 651. A capacitor C2 is connected between the gate wiring 653 and the wiring 652.

[0036] In the temperature detection circuit 60, for example, a constant current Ic is supplied from the terminal 13a, and a ground potential GND is supplied to the terminal 13b. For example, when a constant current Ic in the forward direction is supplied from the terminal 13a to the temperature detection element 6, a current Ia flows through the temperature detection element 6, and a forward voltage Vf is detected by the temperature detection element 6. The voltage Vf changes linearly with temperature. Therefore, the voltage between the terminals 13a and 13b changes with temperature. Therefore, the temperature of the electro-optical device 100 can be detected by detecting the voltage Vf between the terminals 13a and 13b.

[0037] Furthermore, when a surge current due to static electricity flows in from terminal 13a, the potential of the gate of transistor 650 rises. This causes transistor 650 to turn on, and the surge current flows to terminal 13b via transistor 650. The period during which transistor 650 is on is determined by capacitor C1, capacitor C2, resistor R3, and the gate capacitance of transistor 650, etc. After discharging, the gate of transistor 650 returns to the off potential by resistor R3. Therefore, the surge current flowing to temperature detection element 6 is suppressed by electrostatic protection circuit 65, and temperature detection element 6 can be protected.

[0038] A5. Cross-sectional configuration of part of first substrate 2

[0039] Fig. 6 is a cross-sectional view of a portion of the first substrate 2 shown in Fig. 2. As shown in Fig. 6, the laminate 22 has a plurality of insulating layers 221, 222, 223, 224, 225, 226, and 227. The insulating layers 221, 222, 223, 224, 225, 226, and 227 are laminated in this order from the substrate 21. The insulating layers 221 to 227 are translucent and insulating. The material of each of the insulating layers 221 to 227 is, for example, an inorganic material containing silicon, such as silicon oxide and silicon oxynitride.

[0040] The laminate 22 includes a transistor 23, a scanning line 241, a signal line 242, a constant potential line 243, a capacitance element 24, a temperature detection element 6, and a first light-shielding film 71. The laminate 22 also includes relay electrodes 244, 245, 246, 271, 272, 273, 274, and a connection electrode 275. The relay electrode 273 corresponds to a "peripheral relay electrode." The substrate 21 also includes a third light-shielding film 210 and a second light-shielding film 72.

[0041] A5-1. Cross-sectional configuration in display area A10 As described above, the substrate 21 is composed of, for example, a glass substrate or a quartz substrate. The substrate 21 has a recess H0. The recess H0 is a depression formed in the substrate 21, and is formed for each transistor 23. A third light-shielding film 210 is disposed in the recess H0. The third light-shielding film 210 is formed, for example, by using a damascene method. The third light-shielding film 210 is provided to prevent light from entering the semiconductor layer 231 of the transistor 23. It is to be noted that the substrate 21 does not need to have the recess H0. In this case, the third light-shielding film 210 is disposed on a flat surface of the substrate 21 facing the Z1 direction.

[0042] The transistor 23 is disposed on the insulating layer 221. The transistor 23 has a semiconductor layer 231, a gate electrode 232, and a gate insulating film 233. The semiconductor layer 231 is disposed on the insulating layer 221. The gate electrode 232 is disposed on the insulating layer 222. The gate insulating film 233 is interposed between the gate electrode 232 and the semiconductor layer 231. A region of the insulating layer 222 that corresponds to the gate electrode 232 in a plan view corresponds to the gate insulating film 233.

[0043] The transistor 23 has an LDD (Lightly Doped Drain) structure. The semiconductor layer 231 has a drain region 231a, a source region 231b, a channel region 231c, a low-concentration drain region 231d, and a low-concentration source region 231e. The channel region 231c is located between the drain region 231a and the source region 231b. The low-concentration drain region 231d is located between the channel region 231c and the drain region 231a. The low-concentration source region 231e is located between the channel region 231c and the source region 231b. The semiconductor layer 231 is formed of, for example, polysilicon. The region other than the channel region 231c is doped with an impurity that increases conductivity. The impurity concentration in the low-concentration drain region 231d is lower than the impurity concentration in the drain region 231a. The impurity concentration in the low-concentration source region 231e is lower than the impurity concentration in the source region 231b. For example, the transistor 23 does not need to have an LDD structure, and the lightly doped source region 231e and the lightly doped drain region 231d may be omitted.

[0044] The gate electrode 232 is formed, for example, by doping polysilicon with an impurity that enhances electrical conductivity. The gate electrode 232 may be formed using a material having electrical conductivity, such as a metal, a metal oxide, or a metal compound. The gate electrode 232 overlaps the channel region 231c of the semiconductor layer 231 in a planar view. The gate insulating film 233 is composed of a silicon oxide film formed by, for example, thermal oxidation or a CVD (chemical vapor deposition) method. The transistor 23 overlaps the third light-shielding film 210 in a planar view.

[0045] A scanning line 241 is disposed on the insulating layer 223. The scanning line 241 is electrically connected to the gate electrode 232 via a contact 261 disposed in a hole penetrating the insulating layer 222. In addition, the scanning line 241 is electrically connected to the third light-shielding film 210 via a contact 262 disposed in a hole penetrating the insulating layers 221-223.

[0046] Relay electrodes 244 and 245 are disposed on the insulating layer 224. The relay electrode 244 is electrically connected to the drain region 231a of the semiconductor layer 231 via a contact 263 disposed in a hole penetrating the insulating layers 222-224. The relay electrode 244 is electrically connected to the source region 231b of the semiconductor layer 231 via a contact 264 disposed in a hole penetrating the insulating layers 222-224.

[0047] A signal line 242 and a relay electrode 246 are disposed on the insulating layer 225. The signal line 242 is electrically connected to the relay electrode 245 via a contact 266 disposed in a hole penetrating the insulating layer 225. The relay electrode 246 is electrically connected to the relay electrode 244 via a contact 265 disposed in a hole penetrating the insulating layer 225.

[0048] The capacitance element 24 is disposed on the insulating layer 226. The capacitance element 24 has a first electrode 2401, a second electrode 2402, and a dielectric layer 2403. The dielectric layer 2403 is disposed between the first electrode 2401 and the second electrode 2402. The first electrode 2401 is formed integrally with the constant potential line 243. In addition, the second electrode 2402 is electrically connected to the relay electrode 246 via a contact 267 that penetrates the insulating layer 226.

[0049] The pixel electrode 25 is disposed on the insulating layer 227. The pixel electrode 25 is electrically connected to the second electrode 2402 via a contact 268 that penetrates the insulating layer 227.

[0050] Each of the scanning line 241, the signal line 242, the first electrode 2401, the second electrode 2402, and the relay electrodes 244, 245, and 246 includes, for example, a metal such as tungsten (W), titanium (Ti), chromium (Cr), iron, and aluminum (Al), a metal nitride, and a metal silicide. These may be single-layered or multi-layered. For example, they are composed of a multi-layered body of an aluminum film and a titanium nitride film.

[0051] Each of the contacts 261-268 includes, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. Each of the contacts 261-268 may be a single layer or a multilayer. Each of the contacts 261-268 may be a so-called trench type that is formed integrally with an electrode or wiring to be connected, or may be a conductive plug that is formed separately and fills a through hole.

[0052] A5-2. Cross-sectional structure of the peripheral area A20 The substrate 21 has a recess H1. The recess H1 is a depression formed in the substrate 21, and is formed to correspond to the temperature detection element 6. A second light-shielding film 72 having light-shielding properties is disposed in the recess H1. The second light-shielding film 72 is formed, for example, by using a damascene method. The second light-shielding film 72 is provided to prevent light from entering the temperature detection element 6. Note that the substrate 21 does not necessarily have to have the recess H1. In this case, the second light-shielding film 72 is disposed on a flat surface of the substrate 21 facing the Z1 direction.

[0053] The temperature detection element 6 is disposed on the insulating layer 221. The temperature detection element 6 includes an input side 61 and an output side 62. The output side 62 is farther from the display area A10 than the input side 61 in a plan view. In this embodiment, the temperature detection element 6 is a PN junction diode, and has a PN junction portion 63 which is a junction portion between a p-type semiconductor and an n-type semiconductor. In addition, a first light-shielding film 71 having light-shielding properties is disposed on the insulating layer 222.

[0054] FIG. 7 is a diagram showing the planar arrangement of the first light-shielding film 71, the second light-shielding film 72, and the temperature detection element 6 in FIG. 6. As shown in FIG. 7, the temperature detection element 6 has, for example, an elongated shape in a planar view. Each of the first light-shielding film 71 and the second light-shielding film 72 has an elongated shape in a planar view. In the illustrated example, the first light-shielding film 71 and the second light-shielding film 72 have the same planar shape and the same planar area. Each of the first light-shielding film 71 and the second light-shielding film 72 overlaps the temperature detection element 6 in a planar view. In particular, each of the first light-shielding film 71 and the second light-shielding film 72 is arranged so as to cover the entire area of ​​the temperature detection element 6 in a planar view. Therefore, each of the first light-shielding film 71 and the second light-shielding film 72 overlaps the PN junction 63 of the temperature detection element 6 in a planar view.

[0055] As shown in FIG. 6, relay electrodes 271 and 272 are disposed on the insulating layer 224. The relay electrodes 271 and 272 are examples of electrodes electrically connected to the temperature detection element 6. The relay electrode 271 is electrically connected to the input side 61 of the temperature detection element 6 via a contact 281 disposed in a hole penetrating the insulating layers 223 and 224. The relay electrode 271 is connected to the above-mentioned wiring 651 via a relay electrode and a contact not shown. The relay electrode 272 is electrically connected to the output side 62 of the temperature detection element 6 via a contact 282 disposed in a hole penetrating the insulating layers 223 and 224.

[0056] The relay electrode 273 is disposed on the insulating layer 225. The relay electrode 273 is electrically connected to the relay electrode 272 via a contact 283 that is disposed in a hole penetrating the insulating layer 225.

[0057] A relay electrode 274 is disposed on the insulating layer 226. The relay electrode 274 is electrically connected to the relay electrode 273 via a contact 285 disposed in a hole penetrating the insulating layer 226. The relay electrode 273 is also electrically connected to the constant potential line 243 via a contact 284 disposed in a hole penetrating the insulating layer 225.

[0058] A connection electrode 275 is disposed on the insulating layer 227. The connection electrode 275 is provided in the same layer as the pixel electrode 25. The connection electrode 275 is connected to the wiring 652 described above.

[0059] The relay electrodes 271 to 274 and the connection electrode 275 described above each contain, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. These may be a single layer or a multilayer. For example, these are formed of a multilayer body of an aluminum film and a titanium nitride film.

[0060] Each of the contacts 281 to 286 includes, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. Each of the contacts 281 to 286 may be a single layer or a multilayer. Each of the contacts 281 to 286 may be a so-called trench type that is formed integrally with an electrode or wiring to be connected, or may be a conductive plug that is formed separately and fills a through hole.

[0061] As described above, two light-shielding films are provided for the temperature detection element 6. Specifically, the second light-shielding film 72 is provided below the temperature detection element 6, and the first light-shielding film 71 is provided above the temperature detection element 6. Therefore, the second light-shielding film 72, the temperature detection element 6, and the first light-shielding film 71 are lined up in this order from the substrate 21. Therefore, the temperature detection element 6 is sandwiched between the first light-shielding film 71 and the second light-shielding film 72.

[0062] By providing the first light-shielding film 71 and the second light-shielding film 72 on the first substrate 2 similarly to the temperature detection element 6, the first light-shielding film 71 and the second light-shielding film 72 are disposed closer to the temperature detection element 6 than in the past. Therefore, it is possible to more effectively suppress the incidence of light and the incidence of return light on the temperature detection element 6 than in the past. Therefore, it is possible to suppress the characteristic fluctuation of the temperature detection element 6 due to the incidence of light. Therefore, compared to the conventional configuration, according to the configuration of the present application, it is possible to suppress the characteristic fluctuation of the temperature detection element 6. In particular, by sandwiching the temperature detection element 6 between the first light-shielding film 71 and the second light-shielding film 72, it is possible to suppress the incidence of light on the temperature detection element 6 more than in the case where only one of the first light-shielding film 71 and the second light-shielding film 72 is provided.

[0063] Further, the temperature detection element 6, the first light-shielding film 71, and the relay electrode 271 or 272 are arranged in this order from the substrate 21. From another perspective, no wiring or electrodes are arranged between the temperature detection element 6 and the first light-shielding film 71. This allows the first light-shielding film 71 to be arranged close to the temperature detection element 6. This makes it possible to suppress the incidence of light on the temperature detection element 6, compared to the case where wiring and electrodes are arranged between the temperature detection element 6 and the first light-shielding film 71. The relay electrode 271 or 272 is an electrode electrically connected to the temperature detection element 6.

[0064] Furthermore, no wiring or electrodes are arranged between the second light-shielding film 72 and the temperature detection element 6. This allows the second light-shielding film 72 to be arranged close to the temperature detection element 6. This makes it possible to suppress the incidence of light on the temperature detection element 6, compared to the case where wiring and electrodes are arranged between the second light-shielding film 72 and the temperature detection element 6.

[0065] Examples of materials for the first light-shielding film 71 include metals such as tungsten, titanium, chromium, iron, and aluminum, metal nitrides, and metal silicides. Among these, the first light-shielding film 71 preferably contains tungsten or aluminum. Tungsten or aluminum has excellent heat resistance during processing, and its OD (Optical Density) value is unlikely to change. For this reason, by using the first light-shielding film 71 containing tungsten or aluminum, the light-shielding property for the temperature detection element 6 can be improved. In particular, tungsten has excellent heat resistance and light-shielding properties. For this reason, by containing tungsten, the first light-shielding film 71 can particularly effectively prevent light from entering the temperature detection element 6.

[0066] Examples of materials for the second light-shielding film 72 include metals such as tungsten, titanium, chromium, iron, and aluminum, metal nitrides, and metal silicides. Among these, the second light-shielding film 72, like the first light-shielding film 71, preferably contains tungsten or aluminum, and more preferably is tungsten, from the viewpoints of heat resistance and OD value. When the second light-shielding film 72 contains tungsten, it is possible to particularly effectively prevent light from entering the temperature detection element 6. The materials for the first light-shielding film 71 and the second light-shielding film 72 may be the same as or different from each other.

[0067] As described above, the temperature detection element 6 is a diode. Since the temperature detection element 6 is a diode, it is possible to detect the temperature with a simple configuration.

[0068] Also, it is preferable that the temperature detection element 6 is disposed near the display region A10. For example, as described above, it is preferable that the temperature detection element 6 overlaps with the peripheral electrode 26 for ion trapping in a planar view. Also, the temperature detection element 6 is disposed outside the dummy pixel electrode 25d in a planar view. From the viewpoint of disposing the temperature detection element 6 near the display region A10, the temperature detection element 6 may overlap with the dummy pixel electrode 25d in a planar view. However, by not overlapping the temperature detection element 6 with the dummy pixel electrode 25d in a planar view, it is possible to prevent the action of the dummy pixel electrode 25d from being hindered by the temperature detection element 6. It is preferable that the structures of the lower layers of the dummy pixel electrode 25d and the pixel electrode 25 are the same structure so that there is no difference in driving between the dummy pixel electrode 25d and the pixel electrode 25.

[0069] Moreover, it is preferable that the output side 62 of the temperature detection element 6, which is a diode, is farther from the display area A10 than the input side 61 in a plan view. For example, when the temperature detection element 6 has a p-type semiconductor as the input side 61 and an n-type semiconductor as the output side 62, it is preferable that the n-type semiconductor is farther from the display area A10 than the p-type semiconductor. By separating the output side 62 from the display area A10, the output side 62 becomes less susceptible to the influence of light LL incident on the display area A10 than the input side 61. This makes it possible to stabilize the current value of the output side 62. By stabilizing the current value of the output side 62, it is possible to improve the accuracy of temperature detection.

[0070] Furthermore, each of the first light-shielding film 71B and the second light-shielding film 72B overlaps with the PN junction 63 of the temperature detection element 6 in a planar view. When light is incident on the PN junction 63 of the temperature detection element 6, the temperature detection accuracy is likely to decrease. For this reason, by providing the first light-shielding film 71B and the second light-shielding film 72B so as to overlap the PN junction 63 in a planar view, it is possible to particularly effectively suppress fluctuations in the characteristics of the temperature detection element 6.

[0071] As described above, the temperature detection element 6 is provided in the same layer as the semiconductor layer 231. Therefore, the temperature detection element 6 can be formed together with the semiconductor layer 231. Similarly to the semiconductor layer 231, the distance in the Z axis between the temperature detection element 6 and the substrate 21 is shorter than the distance in the Z axis between the temperature detection element 6 and the pixel electrode 25. Therefore, the temperature detection element 6 is disposed close to the substrate 21. Therefore, it is possible to suppress the risk that the light LL will reach the temperature detection element 6.

[0072] Moreover, the first light-shielding film 71 is provided in the insulating layer 223, which is a layer in which the gate electrode 232 is provided. Since the first light-shielding film 71 is provided in the insulating layer 223, the distance between the first light-shielding film 71 and the temperature detection element 6 is very short. For this reason, it is possible to particularly effectively suppress the incidence of the light LL into the temperature detection element 6. Moreover, from the viewpoint of particularly effectively suppressing the incidence of the light LL into the temperature detection element 6, it is more preferable that the first light-shielding film 71 is provided in the insulating layer 222, which is a layer between the semiconductor layer 231 and the gate electrode 232.

[0073] Furthermore, the temperature detection element 6 of this embodiment has the output side 62 and the input side 61 formed in the same layer, and is formed on one insulating layer 221. Therefore, the first light-shielding film 71 can be brought closer to the temperature detection element 6 compared to a three-dimensional structure in which the temperature detection element 6 is formed across multiple insulating layers.

[0074] B. Second embodiment A second embodiment will be described. In the following examples, elements having the same functions as those in the first embodiment will be designated by the same reference numerals as those in the first embodiment, and detailed descriptions thereof will be omitted as appropriate.

[0075] 8 is a cross-sectional view of a portion of a first substrate 2A according to the second embodiment. The first substrate 2A according to the second embodiment includes a connection portion 73.

[0076] 8, the first light-shielding film 71 and the second light-shielding film 72 are connected by a connection portion 73. The connection portion 73 is provided in the peripheral region A20. The connection portion 73 is disposed in a hole penetrating the insulating layers 221 and 222. The connection portion 73 is closer to the display region A10 than the first light-shielding film 71 and the second light-shielding film 72. By providing such a connection portion 73, it is possible to suppress the incidence of light into the temperature detection element 6 from a direction inclined with respect to the Z axis, compared to a case where the connection portion 73 is not provided.

[0077] C. Third embodiment A third embodiment will be described. In the following examples, elements having the same functions as those in the first embodiment will be designated by the same reference numerals as those in the first embodiment, and detailed descriptions thereof will be omitted as appropriate.

[0078] Fig. 9 is a cross-sectional view of a portion of the first substrate 2B of the third embodiment. Fig. 10 is a diagram showing the planar arrangement of the first light-shielding film 71B, the second light-shielding film 72B, and the temperature detection element 6 of Fig. 9. The laminate 22B of the first substrate 2B of the third embodiment has a first light-shielding film 71B and a second light-shielding film 72B instead of the first light-shielding film 71 and the second light-shielding film 72 of the first embodiment. The first light-shielding film 71B and the second light-shielding film 72B have different planar areas from the first light-shielding film 71 and the second light-shielding film 72 of the first embodiment.

[0079] 9 and 10, each of the first light-shielding film 71B and the second light-shielding film 72B overlaps the temperature detection element 6 in a planar view, but does not cover the entire area of ​​the temperature detection element 6. Each of the first light-shielding film 71B and the second light-shielding film 72B overlaps the PN junction 63 of the temperature detection element 6 in a planar view.

[0080] When light is incident on the PN junction 63 of the temperature detection element 6, the temperature detection accuracy is likely to decrease. For this reason, the first light-shielding film 71B and the second light-shielding film 72B are provided so as to overlap the PN junction 63 in a plan view, rather than covering the entire area of ​​the temperature detection element 6, so that the first light-shielding film 71B and the second light-shielding film 72B can exhibit maximum light-shielding performance with a minimum planar area.

[0081] C. Fourth embodiment A fourth embodiment will be described. In the following examples, the elements having the same functions as those in the first embodiment will be designated by the reference numerals used in the description of the first embodiment, and detailed descriptions thereof will be omitted as appropriate.

[0082] 11 is a cross-sectional view of a portion of a first substrate 2C according to the fourth embodiment. The first substrate 2C shown in FIG.

[0083] C-1. Cross-sectional configuration of display area A10 A relay electrode 247 is disposed on the insulating layer 227. The relay electrode 247 is electrically connected to a second electrode 2402 of the capacitance element 24 via a contact 268 disposed in a hole penetrating the insulating layer 227. In addition, a relay electrode 248 is disposed on the insulating layer 228. The relay electrode 248 is electrically connected to the relay electrode 247 via a contact 2601 disposed in a hole penetrating the insulating layer 228.

[0084] Moreover, a lens layer 2201 is disposed on the insulating layer 228 so as to cover the relay electrode 248. The lens layer 2201 has a lens 220. The lens 220 is hemispherical and protrudes in the Z1 direction. The lens 220 has a convex lens surface. The lens 220 is provided for each pixel electrode 25. A light-transmitting layer 2202 is disposed on the lens layer 2201. Each of the lens layer 2201 and the light-transmitting layer 2202 includes an inorganic material containing silicon, such as silicon oxide or silicon oxynitride. The refractive index of the light-transmitting layer 2202 is different from the refractive index of the lens layer 2201. For example, the lens 220 refracts light incident from the second substrate 3 so as not to be incident on the transistor 23.

[0085] A relay electrode 249 is disposed on the light-transmitting layer 2202. The relay electrode 249 is electrically connected to the relay electrode 248 via a contact 2602 disposed in a hole penetrating the lens layer 2201 and the light-transmitting layer 2202. In addition, a pixel electrode 25 is disposed on the insulating layer 229. The pixel electrode 25 is electrically connected to the relay electrode 249 via a contact 269 disposed in a hole penetrating the insulating layer 229.

[0086] Each of the relay electrodes 247, 248, and 249 includes, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. These may be a single layer or a multilayer. For example, each of them is composed of a multilayer of an aluminum film and a titanium nitride film.

[0087] Each of the contacts 268, 2601, 2602, and 269 includes, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. Each of the contacts 268, 2601, 2602, and 269 may be a single layer or a multilayer. Each of the contacts 268, 2601, 2602, and 269 may be a so-called trench type that is formed integrally with an electrode or wiring to be connected, or may be a conductive plug that is formed separately and fills a through hole.

[0088] However, the contact 2602 is preferably a conductive plug that fills a hole penetrating the lens layer 2201 and the light-transmitting layer 2202. The thickness of each of the lens layer 2201 and the light-transmitting layer 2202 is greater than the thickness of other insulating layers in the laminate 22. For this reason, the contact 2602 is preferably a conductive plug. By using the contact 2602 as a conductive plug, it is possible to reliably establish electrical continuity between the relay electrode 248 and the relay electrode 249 even in a through hole with a high aspect ratio.

[0089] C-2. Cross-sectional configuration of peripheral region A20 A relay electrode 276 is disposed on the insulating layer 227. The relay electrode 276 is electrically connected to the relay electrode 274 via a contact 286 disposed in a hole penetrating the insulating layer 227. In addition, a relay electrode 277 is disposed on the insulating layer 228. The relay electrode 277 is electrically connected to the relay electrode 276 via a contact 287 disposed in a hole penetrating the insulating layer 228.

[0090] A relay electrode 278 is disposed on the light-transmitting layer 2202. The relay electrode 278 is electrically connected to the relay electrode 277 via a contact 288 disposed in a hole penetrating the lens layer 2201 and the light-transmitting layer 2202. In addition, a connection electrode 275 is disposed on the insulating layer 229. The connection electrode 275 is electrically connected to the relay electrode 277 via a contact 289 disposed in a hole penetrating the insulating layer 229.

[0091] Each of the relay electrodes 276, 277, and 278 includes, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. These may be a single layer or a multilayer. For example, each of them is composed of a multilayer of an aluminum film and a titanium nitride film.

[0092] Each of the contacts 286, 287, 288, and 289 includes, for example, a metal such as tungsten, titanium, chromium, iron, or aluminum, a metal nitride, or a metal silicide. Each of the contacts 286, 287, 288, and 289 may be a single layer or a multilayer. Each of the contacts 286, 287, 288, and 289 may be a so-called trench type that is formed integrally with an electrode or wiring to be connected, or may be a conductive plug that is formed separately and fills a through hole.

[0093] However, the contact 288 is preferably a conductive plug that fills a hole penetrating the lens layer 2201 and the light-transmitting layer 2202. The thickness of each of the lens layer 2201 and the light-transmitting layer 2202 is greater than the thickness of other insulating layers in the laminate 22. For this reason, the contact 2602 is preferably a conductive plug. By using the contact 288 as a conductive plug, it is possible to reliably establish electrical continuity between the relay electrode 277 and the relay electrode 278 even in a through hole with a high aspect ratio.

[0094] As described above, the lens layer 2201 is provided on the first substrate 2, and the lens layer 2201 is disposed between the temperature detection element 6 and the pixel electrode 25. When the lens layer 2201 is provided on the first substrate 2, light that passes through the lenses 220 of the lens layer 2201 is more likely to be reflected or scattered by various wirings than when a lens layer is provided on the second substrate 3. For this reason, by providing the first light-shielding film 71 and the second light-shielding film 72 on the first substrate 2 including the lens layer 2201, the effect of suppressing light from entering the temperature detection element 6 is significantly exhibited.

[0095] 2. Variations The above-described embodiment may be modified in various ways. Specific modified aspects that may be applied to the above-described embodiment are illustrated below. Two or more aspects selected from the following examples may be combined as appropriate to the extent that they are not mutually contradictory.

[0096] In each of the above-described embodiments, the electro-optical device 100 is an active matrix type, but the driving method of the electro-optical device 100 is not limited to this, and may be, for example, a passive matrix type or the like.

[0097] The driving method of the "electro-optical device" is not limited to the vertical electric field method, but may be a horizontal electric field method. The horizontal electric field method may be, for example, an IPS (In Plane Switching) mode. The vertical electric field method may be, for example, a TN (Twisted Nematic) mode, a VA (Vertical Alignment), a PVA mode, or an OCB (Optically Compensated Bend) mode.

[0098] 3.Electronic equipment The electro-optical device 100 can be used in various electronic devices.

[0099] 12 is a perspective view showing a personal computer 2000, which is an example of an electronic device. The personal computer 2000 has an electro-optical device 100 that displays various images, a main body 2010 on which a power switch 2001 and a keyboard 2002 are installed, and a control unit 2003. The control unit 2003 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100.

[0100] 13 is a plan view showing a smartphone 3000 as an example of an electronic device. The smartphone 3000 has an operation button 3001, an electro-optical device 100 that displays various images, and a control unit 3002. The screen content displayed on the electro-optical device 100 changes in response to an operation of the operation button 3001. The control unit 3002 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100.

[0101] 14 is a schematic diagram showing a projector, which is an example of an electronic device. The projection display device 4000 is, for example, a three-plate projector. The electro-optical device 1r is an electro-optical device 100 corresponding to a red display color, the electro-optical device 1g is an electro-optical device 100 corresponding to a green display color, and the electro-optical device 1b is an electro-optical device 100 corresponding to a blue display color. That is, the projection display device 4000 has three electro-optical devices 1r, 1g, and 1b corresponding to red, green, and blue display colors, respectively. The control unit 4005 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100.

[0102] The illumination optical system 4001 supplies a red component r of light emitted from an illumination device 4002, which is a light source, to an electro-optical device 1r, a green component g to an electro-optical device 1g, and a blue component b to an electro-optical device 1b. Each of the electro-optical devices 1r, 1g, and 1b functions as an optical modulator such as a light valve that modulates each monochromatic light supplied from the illumination optical system 4001 according to a display image. The projection optical system 4003 combines the light emitted from each of the electro-optical devices 1r, 1g, and 1b and projects the combined light onto a projection surface 4004.

[0103] The above electronic device includes the electro-optical device 100 and the control unit 2003, 3002, or 4005. The electro-optical device 100 has excellent light blocking properties for the temperature detection element 6, so that fluctuations in the characteristics of the temperature detection element 6 are suppressed. This reduces the risk of display defects occurring in the electro-optical device 100. Therefore, by including the electro-optical device 100, it is possible to improve the display quality of the personal computer 2000, the smartphone 3000, or the projection display device 4000.

[0104] Note that electronic devices to which the electro-optical device of the present invention can be applied are not limited to the exemplified devices, and examples thereof include PDAs (Personal Digital Assistants), digital still cameras, televisions, video cameras, car navigation devices, in-vehicle displays, electronic organizers, electronic paper, calculators, word processors, workstations, videophones, and POS (Point of Sale) terminals, etc. Furthermore, examples of electronic devices to which the present invention can be applied include printers, scanners, copiers, video players, and devices equipped with touch panels, etc.

[0105] Although the present invention has been described based on the preferred embodiment, the present invention is not limited to the above embodiment. Furthermore, the configuration of each part of the present invention can be replaced with any configuration that exhibits the same function as the above embodiment, and any configuration can be added.

[0106] In the above description, a liquid crystal display device has been described as an example of the electro-optical device of the present invention, but the electro-optical device of the present invention is not limited to this. For example, the electro-optical device of the present invention can also be applied to an image sensor, etc. [Explanation of symbols]

[0107] Reference Signs List 2...first substrate, 3...second substrate, 5...liquid crystal layer, 6...temperature detection element, 13a...terminal, 13b...terminal, 21...substrate, 22...laminated body, 23...transistor, 25...pixel electrode, 25d...dummy pixel electrode, 26...peripheral electrode, 60...temperature detection circuit, 61...input side, 62...output side, 63...PN junction, 65...electrostatic protection circuit, 71...first light-shielding film, 72...second light-shielding film, 73...connection portion, 100...electro-optical device , 220...lens, 231...semiconductor layer, 231a...drain region, 231b...source region, 231c...channel region, 231d...lightly doped drain region, 231e...lightly doped source region, 232...gate electrode, 233...gate insulating film, 241...scanning line, 242...signal line, 243...constant potential line, 271...relay electrode, 272...relay electrode, A10...display area, A20...peripheral area, LL...light, P...pixel.

Claims

1. 1. An electro-optical device including a display area having a plurality of pixels and a peripheral area located outside the display area, a first substrate, a second substrate, and an electro-optic layer disposed between the first substrate and the second substrate, the electro-optic layer having optical properties that change in response to an electric field; The first substrate is A substrate; A plurality of pixel electrodes provided in the display area; A temperature detection element provided in the peripheral region; a first light-shielding film provided in the peripheral region and overlapping the temperature detection element in a plan view; a second light-shielding film provided in the peripheral region and overlapping the temperature detection element in a plan view; The electro-optical device, wherein the second light-shielding film, the temperature detection element, and the first light-shielding film are arranged in this order from the substrate.

2. The first light-shielding film contains tungsten or aluminum.

2. The electro-optical device according to claim 1.

3. the second light-shielding film contains tungsten or aluminum; 2. The electro-optical device according to claim 1.

4. the first substrate further includes an electrode electrically connected to the temperature detection element; the temperature detection element, the first light-shielding film, and the electrode are arranged in this order from the substrate; 2. The electro-optical device according to claim 1.

5. The temperature detection element is a diode.

2. The electro-optical device according to claim 1.

6. the temperature sensing element includes an input side and an output side; the output side is farther from the display area than the input side; 6. The electro-optical device according to claim 5.

7. When the temperature detection element is a PN junction diode, the first light-shielding film and the second light-shielding film overlap a PN junction in a plan view; 6. The electro-optical device according to claim 5.

8. The first substrate further includes a transistor provided in the display area, the transistor includes a semiconductor layer including a drain electrically connected to the pixel electrode; The temperature detection element is provided in the same layer as the semiconductor layer.

2. The electro-optical device according to claim 1.

9. the transistor further includes a gate electrode disposed in a layer between the semiconductor layer and the pixel electrode and overlapping the semiconductor layer in a plan view; The temperature detection element is provided in a layer in which the gate electrode is provided or in a layer between the semiconductor layer and the gate electrode.

9. The electro-optical device according to claim 8.

10. the first substrate further includes a connection portion provided in the peripheral region and connecting the first light-shielding film and the second light-shielding film; the connection portion is closer to the display area than the first light-shielding film and the second light-shielding film; 2. The electro-optical device according to claim 1.

11. the first substrate has a lens layer including lenses; the lens layer is disposed between the temperature detection element and the pixel electrode; 2. The electro-optical device according to claim 1.

12. The first substrate is A constant potential line provided in the display area; a peripheral relay electrode provided in the peripheral region and disposed in a layer between the temperature detection element and the lens layer; the peripheral relay electrode is electrically connected to the constant potential line and the temperature detection element; the peripheral relay electrode and the lens overlap the temperature detection element in a plan view; The electro-optical device according to claim 11 .

13. The electro-optical device according to claim 1 , and a control unit for controlling an operation of the electro-optical device.

Images