Substrate processing method

Abstract

To provide a technique capable of effectively reducing a destruction ratio of a pattern of a substrate.SOLUTION: A substrate processing method comprises: a holding step; a liquid supply step; a first dry liquid supply step; a second dry liquid supply step; and a dry step. In the first dry liquid supply step, a first dry liquid having a first boiling point bp1 and lower in surface tension than a processing liquid is supplied to a first main surface of the substrate. In the second dry liquid supply step, a second dry liquid having a second boiling point bp2 and lower in surface tension than the first dry liquid is supplied to the first main surface of the substrate. In the dry step, the substrate is dried. In at least a partial time in the first dry liquid supply step, a second main surface of the substrate is heated to a first temperature, and in at least a part time in the second dry liquid supply step, at least a part of the second main surface of the substrate is heated to a second temperature. Positive and negative values obtained by subtracting the second temperature from the first temperature are equal to the positive and negative values obtained by subtracting the second boiling point bp2 from the first boiling point bp1.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present disclosure relates to a method for processing a substrate. [Background technology]

[0002] Conventionally, single-wafer substrate processing apparatuses for processing substrates have been disclosed (for example, Patent Document 1). In Patent Document 1, the substrate processing apparatus supplies a rinsing liquid to the substrate, then supplies isopropyl alcohol, which has a lower surface tension than the rinsing liquid, to the substrate, and then dries the substrate. This prevents the pattern on the substrate from collapsing during drying. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-23182 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the technology described in Patent Document 1, the substrate is dried by evaporating isopropyl alcohol. In recent years, as patterns become finer, the patterns on the substrate are more prone to collapse, and it is difficult to sufficiently reduce the rate of pattern collapse by simply evaporating isopropyl alcohol.

[0005] Therefore, an object of the present disclosure is to provide a technique that can effectively reduce the rate of collapse of a pattern on a substrate. [Means for solving the problem]

[0006] A first aspect is a substrate processing method, the method including: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface; a liquid supplying step of supplying a processing liquid to the first main surface of the substrate; a first drying liquid supplying step of supplying a first drying liquid having a first boiling point and a surface tension lower than that of the processing liquid to the first main surface of the substrate after the liquid supplying step; and a second drying liquid having a second boiling point different from the first boiling point and a surface tension lower than that of the first drying liquid to the first main surface of the substrate after the first drying liquid supplying step. the second drying liquid supplying step includes a step of supplying a second drying liquid to a first main surface of the substrate, and a drying step of drying the substrate after the second drying liquid supplying step, wherein the second main surface of the substrate is heated to a first temperature during at least a portion of the time in the first drying liquid supplying step, and at least a portion of the second main surface of the substrate is heated to a second temperature different from the first temperature during at least a portion of the time in the second drying liquid supplying step, and the positive and negative values ​​of a value obtained by subtracting the second temperature from the first temperature are the same as the positive and negative values ​​of a value obtained by subtracting the second boiling point from the first boiling point.

[0007] A second aspect is a substrate processing method according to the first aspect, wherein in the first drying liquid supplying process, a heat medium at a first medium temperature is supplied to the second main surface of the substrate, and in the second drying liquid supplying process, the heat medium at a second medium temperature is supplied to the second main surface of the substrate, and the positive and negative values ​​of the value obtained by subtracting the second medium temperature from the first medium temperature are the same as the positive and negative values ​​of the value obtained by subtracting the second boiling point from the first boiling point.

[0008] A third aspect is the substrate processing method according to the first or second aspect, wherein the higher of the first temperature and the second temperature is equal to or higher than the lower of the first boiling point and the second boiling point.

[0009] A fourth aspect is the substrate processing method according to any one of the first to third aspects, wherein miscibility between the processing liquid and the first drying liquid is higher than miscibility between the processing liquid and the second drying liquid.

[0010] A fifth aspect is a substrate processing method according to any one of the first to fourth aspects, wherein, in the first drying liquid supplying process, the first drying liquid is supplied to the first main surface of the substrate at a flow rate such that the temperature of the first main surface of the substrate is less than the first boiling point of the first drying liquid, while at least a portion of the second main surface of the substrate is heated to a temperature equal to or higher than the first boiling point of the first drying liquid.

[0011] A sixth aspect is a substrate processing method according to any one of the first to fifth aspects, wherein in the second drying liquid supplying process, the second drying liquid is supplied to the first main surface of the substrate at a flow rate such that the temperature of the first main surface of the substrate is less than the second boiling point of the second drying liquid, while at least a portion of the second main surface of the substrate is heated to a temperature equal to or higher than the second boiling point of the second drying liquid.

[0012] A seventh aspect is a substrate processing method according to any one of the first to sixth aspects, wherein the second temperature is higher than the first temperature, and in the second drying liquid supply process, during a previous time period of a second drying liquid supply time during which the second drying liquid is supplied, the temperature of the second main surface of the substrate is lower than the second temperature, and during a later time period of the second drying liquid supply time, the second main surface of the substrate is heated to the second temperature. Effect of the Invention

[0013] According to the first aspect, when the second boiling point is higher than the first boiling point, the second temperature is higher than the first temperature. Therefore, in the second drying liquid supplying step, the temperature of the second drying liquid on the first main surface of the substrate can be made higher. Therefore, the first drying liquid can be replaced with the second drying liquid on the first main surface of the substrate with higher replacement efficiency. Therefore, at the end of the second drying liquid supplying step, the remaining amount of the first drying liquid having a higher surface tension can be reduced. Therefore, the collapse rate of the pattern during drying can be reduced. In addition, at the end of the second drying liquid supplying step, the temperature of the second drying liquid is high, so the second drying liquid can evaporate with a lower surface tension and at a higher evaporation rate. This also reduces the collapse rate of the pattern.

[0014] When the first boiling point is higher than the second boiling point, the first temperature is higher than the second temperature. Therefore, in the first drying liquid supplying step, the temperature of the first drying liquid on the first main surface of the substrate can be made higher. Therefore, the processing liquid can be replaced with the first drying liquid on the first main surface of the substrate with higher replacement efficiency. Therefore, at the end of the first drying liquid supplying step, the remaining amount of the processing liquid with a larger surface tension can be reduced. Therefore, the collapse rate of the pattern during drying can be reduced.

[0015] According to the second aspect, with a simple configuration, the second main surface of the substrate can be heated to a first temperature corresponding to the first boiling point of the first drying liquid and to a second temperature corresponding to the second boiling point of the second drying liquid.

[0016] According to the third aspect, when the second boiling point is higher than the first boiling point, the second main surface of the substrate is heated to a second temperature higher than the first boiling point of the first drying liquid during at least a part of the second drying liquid supplying step. This makes it possible to increase the temperature of the second drying liquid on the first main surface of the substrate. This allows the first drying liquid to be replaced with the second drying liquid with higher replacement efficiency.

[0017] According to the fourth aspect, the treatment liquid can be replaced with the first drying liquid and the first drying liquid can be replaced with the second drying liquid with higher replacement efficiency.

[0018] According to the fifth aspect, in the first drying liquid supplying step, the first drying liquid is supplied at a flow rate that makes the temperature of the first main surface of the substrate lower than the first boiling point while heating the second main surface of the substrate to a first boiling point or higher of the first drying liquid. This makes it possible to more reliably suppress boiling of the first drying liquid while bringing the temperature of the first main surface of the substrate closer to the first boiling point of the first drying liquid, thereby suppressing adhesion of particles.

[0019] According to the sixth aspect, in the second drying liquid supplying step, the second main surface of the substrate is heated to the second boiling point of the second drying liquid or higher, and the second drying liquid is supplied at a flow rate that makes the temperature of the first main surface of the substrate lower than the second boiling point. Therefore, while bringing the temperature of the first main surface of the substrate closer to the second boiling point of the second drying liquid, it is possible to more reliably suppress boiling of the second drying liquid, and to suppress adhesion of particles. Furthermore, since the temperature of the first main surface is closer to the second boiling point, in the subsequent drying step, the drying liquid can be evaporated in a shorter time with a lower surface tension. Therefore, it is possible to effectively reduce the collapse rate of the pattern.

[0020] According to the seventh aspect, it is possible to reduce power consumption. [Brief description of the drawings]

[0021] [Figure 1] 1 is a plan view illustrating an example of a configuration of a substrate processing apparatus. [Diagram 2] 2 is a block diagram illustrating an example of an internal configuration of a control unit. FIG. [Diagram 3] FIG. 2 is a vertical cross-sectional view illustrating an example of the configuration of a processing unit according to the first embodiment. [Figure 4] 13 is a flowchart showing an example of an operation of a processing unit. [Diagram 5] FIG. 11 is a diagram illustrating an example of a processing unit in a first drying liquid supplying step. [Figure 6] 11A and 11B are diagrams each showing an example of a processing unit in a second drying liquid supplying step; [Figure 7] 5A to 5C are diagrams showing a timing chart of the processing unit according to the first embodiment, and a first example of changes in temperature of a heat medium over time and changes in temperature of a second main surface of a substrate over time. [Figure 8] 6A to 6C are diagrams showing a timing chart of the processing unit according to the first embodiment, and a second example of changes in the medium temperature of the heat medium over time and changes in the temperature of the second main surface of the substrate over time. [Figure 9]13A to 13C are diagrams showing a timing chart of a processing unit according to a second embodiment, and a first example of changes over time in the medium temperature of a heat medium, the temperature of a second main surface of a substrate, and the temperature of a first main surface of a substrate; [Figure 10] 13A to 13C are diagrams showing a timing chart of the processing unit according to the second embodiment, and a second example of changes over time in the medium temperature of the heat medium, the temperature of the second main surface of the substrate, and the temperature of the first main surface of the substrate. [Figure 11] 13A to 13C are diagrams showing an example of a timing chart of a processing unit according to a third embodiment, and a schematic diagram showing an example of changes over time in the medium temperature of a heat medium and the temperature of a second main surface of a substrate. [Figure 12] 13 is a flowchart showing a first example of the operation of the processing unit according to the fourth embodiment. [Figure 13] 13 is a flowchart showing a second example of the operation of the processing unit according to the fourth embodiment. [Figure 14] FIG. 13 is a diagram illustrating an example of the configuration of a processing unit according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] Hereinafter, the embodiments will be described in detail with reference to the drawings. In the drawings, the dimensions and numbers of each part are exaggerated or simplified as necessary for the purpose of easy understanding. Parts having similar configurations and functions are given the same reference numerals, and duplicated explanations will be omitted in the following description.

[0023] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0024] In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0025] When an expression indicating a relative or absolute positional relationship (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) is used, the expression not only strictly indicates the positional relationship, but also indicates a state in which the relative positional relationship is displaced with respect to angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) is used, the expression not only strictly indicates a quantitatively equal state, but also indicates a state in which a difference exists within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) is used, the expression not only strictly indicates the shape geometrically, but also indicates a shape having, for example, unevenness or chamfering within a range in which a similar effect is obtained, unless otherwise specified. When an expression "comprises," "has," "includes," "includes," or "has" a component is used, the expression is not an exclusive expression that excludes the presence of other components. When the phrase "at least one of A, B, and C" is used, the phrase includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0026] First Embodiment <Overall configuration of substrate processing apparatus> 1 is a plan view illustrating a schematic configuration of a substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one.

[0027] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell. The substrate W has a thin flat plate shape having a first main surface Wa and a second main surface Wb. The second main surface Wb is the surface opposite to the first main surface Wa. In the following, the substrate W is assumed to be a semiconductor wafer. The substrate W has, for example, a disk shape. The diameter of the substrate W is, for example, about 300 mm, and the thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less. A pattern is formed on the main surface of the substrate W. The pattern here includes, for example, at least one of a wiring pattern, an electrode pattern, a semiconductor pattern, and an insulating pattern. The aspect ratio of the pattern is, for example, 5 or more and 500 or less. The pattern width is, for example, 3 nm or more and 50 nm or less. Such high aspect ratio patterns are prone to collapse.

[0028] 1, the substrate processing apparatus 100 includes an indexer block 110, a processing block 120, and a control unit 90. The processing block 120 is a section that mainly processes the substrate W, and the indexer block 110 is a section that mainly transports the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0029] The indexer block 110 includes a load port 111 and a first transport part 112. A substrate container (hereinafter referred to as a carrier) C that is carried in from the outside is placed on the load port 111. A plurality of substrates W are accommodated in the carrier C, for example, arranged at intervals from each other in the vertical direction. In the example of Fig. 1, a plurality of load ports 111 are arranged.

[0030] The first transport unit 112 is a transport robot and can take out an unprocessed substrate W from a carrier C placed on each load port 111. The first transport unit 112 can also be called an indexer robot. The first transport unit 112 transports the unprocessed substrate W taken out from the carrier C to the processing block 120. The processing block 120 can process the unprocessed substrate W. The first transport unit 112 can also receive a processed substrate W from the processing block 120 and transport the processed substrate W to a carrier C of the load port 111.

[0031] In the example of FIG. 1, the processing block 120 includes a plurality of processing units 1 and a second transport section 122. The second transport section 122 is a transport robot and can transport the substrate W between the first transport section 112 and the plurality of processing units 1. In the example of FIG. 1, the processing block 120 also includes a placement section 123. The placement section 123 is, for example, a shelf on which a plurality of substrates W can be placed in a vertically aligned state. The first transport section 112 places an unprocessed substrate W on the placement section 123. The second transport section 122 takes out the unprocessed substrate W from the placement section 123 and transports the substrate W to the processing unit 1. The processing unit 1 processes the substrate W. The configuration of the processing unit 1 will be described later. The second transport section 122 takes out the processed substrate W from the processing unit 1 and transports the substrate W to the placement section 123. The first transport section 112 takes out the substrate W from the platform 123 and transports the substrate W to the carrier C of the load port 111 .

[0032] 1, a plurality of (e.g., four) processing units 1 are provided so as to surround the second transport section 122 in a plan view. This second transport section 122 may also be called a center robot. At each position in a plan view, a plurality of processing units 1 may be stacked in the vertical direction. In other words, a plurality of towers TW (four in the figure) each of which is made up of a plurality of processing units 1 stacked in the vertical direction may be provided so as to surround the second transport section 122.

[0033] The control unit 90 performs overall control of the substrate processing apparatus 100. Specifically, the control unit 90 controls the first transport unit 112, the second transport unit 122, and the processing unit 1. FIG. 2 is a block diagram showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit, and has, for example, a data processing unit 91 and a storage unit 92. In the specific example of FIG. 2, the data processing unit 91 and the storage unit 92 are connected to each other via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit 92 may have a non-transient storage unit (for example, a ROM (Read Only Memory)) 921 and a temporary storage unit (for example, a RAM (Random Access Memory)) 922. The non-transient storage unit 921 may store, for example, a program that specifies the processing to be executed by the control unit 90. The data processing unit 91 executes this program, so that the control unit 90 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 90 may be executed by hardware such as a dedicated logic circuit.

[0034] <Processing unit overview> Fig. 3 is a vertical cross-sectional view illustrating an example of the configuration of the processing unit 1 according to the first embodiment. It is not necessary that all processing units 1 in the substrate processing apparatus 100 have the configuration illustrated in Fig. 3. It is sufficient that at least one processing unit 1 in the substrate processing apparatus 100 has the configuration illustrated in Fig. 3.

[0035] The processing unit 1 includes a substrate holding section 2 , a discharge section 3 , and a substrate heating section 4 .

[0036] 3, the processing unit 1 is also provided with a chamber 10. The chamber 10 has a box-like shape, and its internal space corresponds to a processing space for processing the substrate W. The chamber 10 is provided with an openable / closable loading / unloading port (not shown). The second transport part 122 loads an unprocessed substrate W into the chamber 10 through the loading / unloading port, and loads a processed substrate W out of the chamber 10 through the loading / unloading port.

[0037] In the example of Fig. 3, a fan filter unit 11 is provided on the ceiling of the chamber 10. The fan filter unit 11 takes in air from outside the chamber 10, purifies it, and sends the purified air into the chamber 10. Operation of the fan filter unit 11 creates a downflow of clean air in the chamber 10. In the example of Fig. 3, the upstream end of an exhaust pipe 13 is connected to the lower part of the side wall of the chamber 10. Gas in the chamber 10 is exhausted to the outside through the exhaust pipe 13.

[0038] The substrate holding unit 2 is provided in the chamber 10, and rotates the substrate W around a rotation axis Q1 while holding the substrate W in a horizontal position. The horizontal position here means that the thickness direction of the substrate W is aligned along the vertical direction. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned along the vertical direction. Such a substrate holding unit 2 may also be called a spin chuck.

[0039] Here, the first main surface Wa of the substrate W on which the pattern is formed faces vertically upward. That is, in the example of Fig. 3, the first main surface Wa of the substrate W held by the substrate holding part 2 corresponds to the upper surface. The pattern includes, for example, at least one of a wiring pattern, an insulating pattern, and a semiconductor pattern.

[0040] In the example of FIG. 3, the substrate holding unit 2 includes a spin base 21, chuck pins 22, and a rotation drive unit 23. The spin base 21 has a plate-like shape (for example, a disk shape) and is provided with its thickness direction aligned along the vertical direction. A plurality of chuck pins 22 are provided on the upper surface of the spin base 21. The plurality of chuck pins 22 are provided at equal intervals along the circumferential direction about the rotation axis Q1. The plurality of chuck pins 22 are provided so as to be displaceable between a holding position and a release position, which will be described next. The holding position is a position where the chuck pins 22 abut against the periphery of the substrate W. The plurality of chuck pins 22 hold the substrate W by stopping at the respective holding positions. FIG. 3 shows the chuck pins 22 stopped at the holding position. The release position is a position where each chuck pin 22 is separated from the substrate W. The plurality of chuck pins 22 stop at the respective release positions, whereby the holding of the substrate W by the plurality of chuck pins 22 is released. The substrate holding unit 2 also includes a pin driving unit (not shown) that displaces the chuck pins 22. The pin driving unit includes a driving source such as a motor and an air cylinder, and is controlled by the control unit 90.

[0041] The rotation drive unit 23 includes a shaft 231 and a motor 232. The upper end of the shaft 231 is connected to the lower surface of the spin base 21, and the shaft 231 extends from the lower surface of the spin base 21 along a rotation axis Q1. The motor 232 is controlled by the control unit 90 to rotate the shaft 231 about the rotation axis Q1. As a result, the spin base 21, the chuck pins 22, and the substrate W rotate together about the rotation axis Q1.

[0042] It should be noted that the substrate holding portion 2 does not necessarily have to have the chuck pin 22. For example, the substrate holding portion 2 may hold the substrate W by a chuck method such as a vacuum chuck, an electrostatic chuck, or a Bernoulli chuck.

[0043] The discharge unit 3 discharges the processing liquid toward the first main surface Wa of the substrate W held by the substrate holding unit 2. As shown in Fig. 3, the discharge unit 3 includes at least one nozzle 30. The nozzle 30 discharges the processing liquid toward the first main surface Wa of the substrate W held by the substrate holding unit 2. In this case, since the first main surface Wa corresponds to the upper surface of the substrate W, the nozzle 30 is provided vertically above the substrate W held by the substrate holding unit 2. The nozzle 30 is, for example, a straight nozzle that discharges the processing liquid in a continuous flow state.

[0044] In the example of FIG. 3, nozzles 30c, 30w, 30ia, and 30ib are shown as the nozzles 30. In the example of FIG. 3, nozzles 30c, 30w, 30ia, and 30ib extend along the vertical direction. In the example of FIG. 3, nozzle 30c has an outlet 3c formed on the lower surface, nozzle 30w has an outlet 3w formed on the lower surface, nozzle 30ia has an outlet 3ia formed on the lower surface, and nozzle 30ib has an outlet 3ib formed on the lower surface. Nozzle 30c ejects the chemical liquid from the outlet 3c, nozzle 30w ejects the rinsing liquid from the outlet 3w, nozzle 30ia ejects the first drying liquid from the outlet 3ia, and nozzle 30ib ejects the second drying liquid from the outlet 3ib. The chemical liquid, the rinsing liquid, the first drying liquid, and the second drying liquid are all examples of the processing liquid, and specific examples thereof will be described later.

[0045] The nozzles 30c, 30w, 30ia, and 30ib discharge the processing liquid toward the center of the first main surface Wa of the substrate W held by the substrate holder 2. In the example of FIG. 3, the nozzles 30c, 30w, 30ia, and 30ib are adjacent to each other in the horizontal direction and fixed to each other. In the example of FIG. 3, the nozzles 30c, 30w, 30ia, and 30ib are provided inside the facing member 60. The facing member 60 has, for example, a cylindrical shape. The facing member 60 has a hollow shape, and the lower end opening of the hollow portion opens on the lower surface of the facing member 60. The nozzles 30c, 30w, 30ia, and 30ib are provided in the hollow portion of the facing member 60, and the processing liquid discharged from each nozzle 30 flows out from the lower end opening of the facing member 60. In the example of FIG. 3, the facing member 60 is provided at a position facing the center of the substrate W held by the substrate holding part 2 in the vertical direction.

[0046] The nozzle 30 is connected to the downstream end of a supply pipe 31, and the upstream end of the supply pipe 31 is connected to a processing liquid supply source. In the example of Fig. 3, the supply pipes 31 include a supply pipe 31c, a supply pipe 31w, a supply pipe 31ia, and a supply pipe 31ib.

[0047] The downstream end of the supply pipe 31c is connected to the nozzle 30c, and the upstream end of the supply pipe 31c is connected to a chemical supply source. The chemical supply source has a tank (not shown) for storing the chemical, and supplies the chemical to the upstream end of the supply pipe 31c. As the chemical, for example, hydrofluoric nitric acid obtained by mixing hydrofluoric acid, nitric acid, and water, hydrofluoric acid hydrogen peroxide solution (FPM) obtained by mixing hydrofluoric acid, hydrogen peroxide, and water, tetramethylammonium hydroxide (TMAH), a mixture of sulfuric acid and hydrogen peroxide (SPM), ammonia water, a mixture of ammonia, hydrogen peroxide, and water (SC-1), and a mixture of hydrogen chloride, hydrogen peroxide, and water (SC-2) can be used. The chemical does not have to be a mixture, and may be a single liquid. For example, a single liquid such as hydrofluoric acid (HF), hydrogen peroxide, and sulfuric acid can be used as the chemical.

[0048] The downstream end of the supply pipe 31w is connected to the nozzle 30w, and the upstream end of the supply pipe 31w is connected to a rinse liquid supply source. The rinse liquid supply source has a tank (not shown) that stores the rinse liquid, and supplies the rinse liquid to the upstream end of the supply pipe 31w. As the rinse liquid, for example, pure water, carbon dioxide water, or ozone water can be used.

[0049] The downstream end of the supply pipe 31ia is connected to the nozzle 30ia, and the upstream end of the supply pipe 31ia is connected to the first drying liquid supply source. The first drying liquid supply source has a tank (not shown) for storing the first drying liquid, and supplies the drying liquid to the upstream end of the supply pipe 31ia. The downstream end of the supply pipe 31ib is connected to the nozzle 30ib, and the upstream end of the supply pipe 31ib is connected to the second drying liquid supply source. The second drying liquid supply source has a tank (not shown) for storing the second drying liquid, and supplies the drying liquid to the upstream end of the supply pipe 31ib. The surface tension of the second drying liquid is lower than that of the first drying liquid. The miscibility of the first drying liquid and the rinsing liquid is higher than that of the second drying liquid and the rinsing liquid. The miscibility of the first drying liquid and the second drying liquid is higher than that of the second drying liquid and the rinsing liquid, for example. Specifically, an organic solvent such as isopropyl alcohol can be used as the first drying liquid. As the second drying liquid, for example, a fluorine-based organic solvent (organic fluorine compound) such as hydrofluoroolefin can be used.

[0050] The first boiling point of the first drying liquid is different from the second boiling point of the second drying liquid. The first boiling point of the first drying liquid may be lower or higher than the second boiling point of the second drying liquid. When the first drying liquid is isopropyl alcohol, the first boiling point of the first drying liquid is 82.4 degrees Celsius, and when the second drying liquid is Opteon (registered trademark) SF70 (methoxyperfluoroheptene), the second boiling point of the second drying liquid is 110.5 degrees Celsius. In this case, the first boiling point of the first drying liquid is lower than the second boiling point of the second drying liquid. Also, when the second drying liquid is Opteon (registered trademark) SF10 (fluoroheptene), the second boiling point of the second drying liquid is 71.5 degrees Celsius. In this case, the first boiling point of the first drying liquid is higher than the second boiling point of the second drying liquid.

[0051] A supply valve 32 and a flow rate control valve 33 are inserted in the supply pipe 31. In the example of FIG. 3, a supply valve 32c and a flow rate control valve 33c are inserted in the supply pipe 31c, a supply valve 32w and a flow rate control valve 33w are inserted in the supply pipe 31w, a supply valve 32ia and a flow rate control valve 33ia are inserted in the supply pipe 31ia, and a supply valve 32ib and a flow rate control valve 33ib are inserted in the supply pipe 31ib. The supply valve 32 switches between opening and closing the supply pipe 31. The flow rate control valve 33 adjusts the flow rate of the processing liquid flowing through the supply pipe 31. The flow rate control valve 33 may be a mass flow controller. The supply valve 32 and the flow rate control valve 33 are controlled by a control unit 90.

[0052] The discharge part 3 discharges various types of processing liquids in the order described below toward the first main surface Wa of the substrate W. This allows the processing unit 1 to sequentially perform various types of processing according to the types of processing liquids on the first main surface Wa of the substrate W. Specific processing will be described later.

[0053] 3, the facing member 60 is configured to be able to discharge gas toward a first main surface Wa of the substrate W held by the substrate holding part 2. In the example of Fig. 3, the space in the hollow part of the facing member 60 other than the nozzle 30 functions as a gas flow path 30g. A lower end opening on the lower surface of the facing member 60 corresponds to the discharge port of the gas flow path 30g.

[0054] In the example of FIG. 3, the upper part of the facing member 60 is connected to the downstream end of the supply pipe 31g. In other words, the downstream end of the supply pipe 31g is connected to the gas flow path 30g. The upstream end of the supply pipe 31g is connected to a gas supply source. The gas supply source has a storage section (not shown) for storing an inert gas, and supplies the inert gas to the upstream end of the supply pipe 31g. The inert gas includes at least one of nitrogen gas and a rare gas, for example. The rare gas includes argon gas, for example.

[0055] Supply pipe 31g is provided with supply valve 32g, flow rate adjustment valve 33g, and heater 34g. Supply valve 32g switches supply pipe 31g between open and closed states. Flow rate adjustment valve 33g adjusts the flow rate of the inert gas flowing through supply pipe 31g. Heater 34g heats the inert gas flowing through supply pipe 31g. Heater 34g may be, for example, an electric resistance heater having a heating wire. Supply valve 32g, flow rate adjustment valve 33g, and heater 34g are controlled by controller 90.

[0056] When the supply valve 32g is opened and the heater 34g is operated, a high-temperature inert gas is discharged from the center of the lower surface of the facing member 60 (i.e., the lower end port of the gas flow passage 30g) toward the center of the first main surface Wa of the substrate W. This can promote drying of the substrate W.

[0057] In the example of FIG. 3, the processing unit 1 is provided with a movement drive unit 35. The movement drive unit 35 moves the discharge head including the nozzle 30c, the nozzle 30w, the nozzle 30ia, the nozzle 30ib, and the opposing member 60 together. Specifically, the movement drive unit 35 moves the discharge head between a processing position and a waiting position, which will be described next. The processing position is a position where the nozzle 30c, the nozzle 30w, the nozzle 30ia, and the nozzle 30ib discharge the processing liquid toward the first main surface Wa of the substrate W, and is, for example, a position facing the center of the first main surface Wa of the substrate W in the vertical direction. The processing position is also a position where the opposing member 60 discharges the inert gas toward the first main surface Wa of the substrate W. In the example of FIG. 3, the discharge head stopped at the processing position is shown. The waiting position is a position where the nozzle 30c, the nozzle 30w, the nozzle 30ia, and the nozzle 30ib do not discharge the processing liquid toward the first main surface Wa of the substrate W, and is, for example, a position radially outward from the substrate holding unit 2. The standby position is also a position where the opposing member 60 does not discharge the inert gas toward the first main surface Wa of the substrate W.

[0058] FIG. 3 shows an example of a specific configuration of the moving drive unit 35. In the example of FIG. 3, the moving drive unit 35 includes an arm 351, a support column 352, and a driving source 353. The support column 352 is provided radially outward from the guard 7 described later, and extends along the vertical direction. The arm 351 extends along the horizontal direction, its tip end is connected to the discharge head, and its base end is connected to the support column 352. The driving source 353 is controlled by the control unit 90, and rotates the support column 352 in forward and reverse directions within a predetermined angle range around the central axis Q2. The driving source 353 includes, for example, a motor. When the support column 352 rotates in forward and reverse directions within a predetermined angle range around the central axis Q2, the discharge head reciprocates along the circumferential direction about the central axis Q2. The support column 352 is installed so that a processing position and a standby position are located on the movement trajectory of the discharge head. The movement drive unit 35 is not necessarily limited to the embodiment shown in FIG. 3, and may include a linear motion mechanism such as a linear motor.

[0059] The substrate heating unit 4 heats the second main surface Wb of the substrate W held by the substrate holding unit 2. In the example of Fig. 3, the substrate heating unit 4 is provided at a position vertically facing the second main surface Wb of the substrate W. In the example of Fig. 3, the second main surface Wb of the substrate W corresponds to the bottom surface, so the substrate heating unit 4 is provided directly below the substrate W.

[0060] In the example of FIG. 3, the substrate heating unit 4 includes a nozzle 40. The nozzle 40 ejects a heat medium toward the second main surface Wb of the substrate W. In the example of FIG. 3, the second main surface Wb of the substrate W corresponds to the bottom surface, so the nozzle 40 may also be called a bottom nozzle. In the example of FIG. 3, a through hole is formed in the center of the spin base 21 of the substrate holding unit 2, and the shaft 231 is a hollow shaft. The through hole of the spin base 21 and the hollow part of the shaft 231 are connected in the vertical direction. A part of the nozzle 40 is disposed in the through hole. An ejection port is formed in the upper surface of the nozzle 40, and the ejection port of the nozzle 40 faces the center of the second main surface Wb of the substrate W in the vertical direction. The nozzle 40 ejects a heat medium toward the center of the second main surface Wb of the substrate W.

[0061] The downstream end of a supply pipe 41 is connected to the nozzle 40. The supply pipe 41 extends inside the shaft 231 and penetrates the shaft 231. The upstream end of the supply pipe 41 is connected to a heat medium supply source. The heat medium is a fluid (gas or liquid), and a more specific example is a liquid such as water. The heat medium supply source has, for example, a tank (not shown) that stores the heat medium, and supplies the heat medium to the upstream end of the supply pipe 41.

[0062] In the example of FIG. 3, supply pipe 41 is provided with supply valve 42, flow rate adjustment valve 43, and heater 44. Supply valve 42 switches supply pipe 41 between open and closed states. Flow rate adjustment valve 43 adjusts the flow rate of the heat medium flowing through supply pipe 41. Flow rate adjustment valve 43 may be a mass flow controller. Heater 44 heats the heat medium flowing through supply pipe 41. Heater 44 may be, for example, an electric resistance heater having an electric heating wire. Supply valve 42, flow rate adjustment valve 43, and heater 44 are controlled by control unit 90.

[0063] When the supply valve 42 opens and the heater 44 operates, a high-temperature heat medium is discharged from the nozzle 40 onto the central portion of the second main surface Wb of the substrate W. The heat medium that has landed on the central portion of the second main surface Wb of the substrate W receives centrifugal force accompanying the rotation of the substrate W, flows radially outward along the second main surface Wb, and is scattered outward from the periphery of the substrate W. As the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat is transferred from the heat medium to the substrate W, and the substrate W is heated.

[0064] In the example of FIG. 3, the processing unit 1 is provided with a guard 7 and a guard lifting drive 71. The guard 7 has a cylindrical shape with the rotation axis Q1 as the central axis, and surrounds the substrate holder 2. The guard 7 can receive the processing liquid and heat medium splashed from the periphery of the substrate W. The guard lifting drive 71 raises and lowers the guard 7 between an upper position and a lower position, which will be described below. The upper position is a position where the upper end of the guard 7 is vertically above the substrate W held by the substrate holder 2. When the guard 7 is located at the upper position, it can receive the processing liquid and heat medium splashed from the periphery of the substrate W. The lower position is a position lower than the upper position, for example, a position where the upper end of the guard 7 is vertically below the upper surface of the spin base 21.

[0065] In the example of FIG. 3, multiple guards 7 are provided. The multiple guards 7 are arranged concentrically. The multiple guards 7 may be used differently depending on the type of processing liquid. In the example of FIG. 3, cups 72 corresponding to each guard 7 are provided. The cups 72 have an annular (e.g., annular) recess (groove) surrounding the rotation axis Q1. Each cup 72 receives the processing liquid that has flowed down the inner circumferential surface of the corresponding guard 7. The upstream end of the discharge pipe 12 is connected to, for example, the bottom of each cup 72. The processing liquid received in each cup 72 is discharged to the outside of the processing unit 1 through the discharge pipe 12.

[0066] <An example of the operation of the substrate processing apparatus> Next, an example of the operation of the processing unit 1 will be described. Fig. 4 is a flow chart showing an example of the operation of the processing unit 1. The control unit 90 causes the processing unit 1 to execute the processes from step S1 to step S8 according to a preset processing procedure (recipe). Fig. 5 is a diagram showing an example of the state of the processing unit 1 in a first drying liquid supplying step described below, and Fig. 6 is a diagram showing an example of the state of the processing unit 1 in a second drying liquid supplying step described below.

[0067] First, the second transport part 122 transports the substrate W to the processing unit 1. Then, the substrate holding part 2 holds the substrate W received from the second transport part 122 (step S1: holding step). As a specific example, the substrate holding part 2 displaces the multiple chuck pins 22 from their respective release positions to their holding positions. As a result, the multiple chuck pins 22 hold the substrate W. The substrate holding part 2 continues to hold the substrate W until the processing of the substrate W is completed.

[0068] Next, the substrate holding part 2 starts rotating the substrate W (step S2: rotation start step). The substrate holding part 2 may continue rotating the substrate W until the processing of the substrate W is completed.

[0069] Next, the processing unit 1 supplies the chemical liquid to the first main surface Wa of the substrate W (Step S3: Chemical liquid process). First, the movement drive unit 35 moves the discharge head to the processing position. Also, the guard lift drive unit 71 raises the guard 7 for the chemical liquid to the upper position. Then, the control unit 90 opens the supply valve 32c. That is, the control unit 90 switches the supply valve 32c from a closed state to an open state. As a result, the chemical liquid is discharged from the nozzle 30c toward the first main surface Wa of the substrate W during rotation. The chemical liquid that has landed on the first main surface Wa of the substrate W flows radially outward due to the centrifugal force accompanying the rotation of the substrate W, and is scattered from the periphery of the substrate W. At this time, the chemical liquid acts on the first main surface Wa of the substrate W, and a chemical liquid process according to the type of the chemical liquid is performed on the first main surface Wa of the substrate W. For example, the processing unit 1 performs a cleaning process for cleaning and removing impurities on the first main surface Wa of the substrate W, or an etching process for etching a predetermined film on the first main surface Wa of the substrate W. The chemical solution scattered from the periphery of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0070] When the substrate W has been sufficiently processed, the control unit 90 closes the supply valve 32c. As a specific example, the control unit 90 measures the elapsed time from the start of the discharge of the chemical liquid, and determines whether the elapsed time is equal to or longer than a predetermined chemical liquid time. The chemical liquid time is set in advance to a time sufficient for the chemical liquid processing to be performed sufficiently. The elapsed time is measured, for example, by a timer circuit (not shown) belonging to the control unit 90. When the elapsed time is equal to or longer than the chemical liquid time, the control unit 90 switches the supply valve 32c from an open state to a closed state.

[0071] Next, the processing unit 1 supplies a rinse liquid to the first main surface Wa of the substrate W (step S4: rinse step). When the guard 7 for the rinse liquid is different from the guard 7 for the chemical liquid, the guard lifting drive unit 71 appropriately lifts and lowers the guard 7 to place the guard 7 for the rinse liquid in the upper position. Then, the control unit 90 opens the supply valve 32w. That is, the control unit 90 switches the supply valve 32w from a closed state to an open state. As a result, the rinse liquid is discharged from the nozzle 30w toward the first main surface Wa of the substrate W during rotation. The rinse liquid that has landed on the first main surface Wa of the substrate W flows radially outward due to the centrifugal force caused by the rotation of the substrate W, and is scattered from the periphery of the substrate W. At this time, the rinse liquid pushes the chemical liquid on the first main surface Wa of the substrate W radially outward. As a result, the processing liquid on the first main surface Wa of the substrate W is replaced from the chemical liquid to the rinse liquid. The processing liquid splashed from the periphery of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12 .

[0072] When the chemical liquid has been sufficiently replaced with the rinsing liquid, the control unit 90 closes the supply valve 32w. As a specific example, the control unit 90 measures the elapsed time from the start of discharge of the rinsing liquid, and switches the supply valve 32w from the open state to the closed state when the elapsed time is equal to or longer than a predetermined rinsing time. The rinsing time is set in advance to a time that allows the chemical liquid to be sufficiently replaced with the rinsing liquid.

[0073] Next, the processing unit 1 supplies a first drying liquid to the first main surface Wa of the substrate W (Step S5: first drying liquid supplying step). When the guard 7 for the first drying liquid is different from the guard 7 for the rinsing liquid, the guard lifting drive unit 71 lifts and lowers the guard 7 appropriately to raise the guard 7 for the first drying liquid to the upper position. Then, the control unit 90 opens the supply valve 32ia. That is, the control unit 90 switches the supply valve 32ia from a closed state to an open state.

[0074] When the supply valve 32ia opens, as shown in FIG. 5, the first drying liquid is discharged from the discharge port 3ia of the nozzle 30ia toward the first main surface Wa of the substrate W during rotation. The temperature of the first drying liquid may be, for example, room temperature (for example, about 25 degrees Celsius). The temperature of the first drying liquid here is, for example, the temperature of the first drying liquid at the discharge port 3ia. Moreover, the room temperature here includes, for example, the temperature of the first drying liquid when a heater for heating the first drying liquid is not provided upstream of the discharge port 3ia or when the heater is not operating. In other words, the room temperature includes the temperature of the first drying liquid that is not heated.

[0075] The first drying liquid from the nozzle 30ia lands on the center of the first main surface Wa of the substrate W. The first drying liquid that has landed on the first main surface Wa flows radially outward due to centrifugal force accompanying the rotation of the substrate W, and splashes off from the periphery of the substrate W. At this time, the first drying liquid pushes away the rinsing liquid on the first main surface Wa of the substrate W, so that the processing liquid on the first main surface Wa of the substrate W is replaced from the rinsing liquid to the first drying liquid. The processing liquid that has splashed off from the periphery of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0076] Here, the rotation speed of the substrate W in the first drying liquid supplying step may be set to, for example, 150 rpm or more and 600 rpm or less, or 200 rpm or more and 400 rpm or less. As a more specific example, the rotation speed may be set to 300 rpm. The flow rate of the first drying liquid may be preset to, for example, about 100 mL / min or more, more specifically, 250 mL / min or more.

[0077] Moreover, the processing unit 1 heats the second main surface Wb of the substrate W when the first drying liquid is supplied. That is, the substrate heating section 4 heats the second main surface Wb of the substrate W. As a more specific example, the control section 90 opens the supply valve 42 and activates the heater 44. As a result, as shown in FIG. 5, a high-temperature heat medium (e.g., hot water) is discharged from the nozzle 40 toward the center of the second main surface Wb of the substrate W during rotation. The heat medium that has landed on the center of the second main surface Wb of the substrate W flows radially outward due to the centrifugal force caused by the rotation of the substrate W, and is scattered from the periphery of the substrate W. When the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat is transferred from the heat medium to the substrate W, and the substrate W is heated. The heat of the substrate W is transferred to the first drying liquid on the first main surface Wa. As a result, the first drying liquid on the first main surface Wa of the substrate W is also heated and the temperature increases.

[0078] The substrate heating unit 4 heats the second main surface Wb of the substrate W to a first temperature (first temperature value). The first temperature may be preset to a value according to the first boiling point of the first drying liquid. Here, the second main surface Wb of the substrate W may have the following temperature distribution. That is, in this temperature distribution, the temperature at the liquid landing position (here, the center) of the heat medium is high, and the temperature decreases as it moves away from the liquid landing position in the radial direction. The first temperature here may be, for example, the maximum value of the temperature distribution. The first temperature may be 60 degrees Celsius or more, 70 degrees Celsius or more, or 80 degrees Celsius or more. The first temperature may be less than the first boiling point of the first drying liquid. As a specific example, the first temperature may be set to 80 degrees Celsius.

[0079] Specifically, the heater 44 heats the heat medium so that the temperature of the heat medium (hereinafter referred to as the medium temperature) becomes a first medium temperature (first medium temperature value). The medium temperature of the heat medium here is, for example, the temperature of the heat medium at the discharge port of the nozzle 40. The first medium temperature may be, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. As a specific example, the first medium temperature may be set to 80 degrees Celsius. The first medium temperature may be lower than the first boiling point of the first drying liquid. For example, when the heat medium is water, the first medium temperature may be set to less than 90 degrees Celsius, which is 10 degrees lower than the boiling point of the heat medium (100 degrees Celsius). This makes it possible to comply with the SEMI standard.

[0080] The flow rate regulating valve 43 may adjust the flow rate of the heat medium to, for example, a value greater than the flow rate of the first drying liquid. More specifically, the flow rate regulating valve 43 may adjust the flow rate of the heat medium to 1000 mL / min or more, or to 1500 mL / min or more.

[0081] As described above, in the first drying liquid supplying step, the processing unit 1 supplies the first drying liquid to the first main surface Wa of the substrate W while heating the second main surface Wb of the substrate W. This also increases the temperature of the first drying liquid on the first main surface Wa of the substrate W. By increasing the temperature of the first drying liquid, it is possible to increase the efficiency of replacement of the rinsing liquid with the first drying liquid.

[0082] When the rinsing liquid has been sufficiently replaced with the first drying liquid, the control unit 90 closes the supply valve 32ia. As a specific example, the control unit 90 measures the elapsed time from the start of ejection of the first drying liquid, and switches the supply valve 32ia from an open state to a closed state when the elapsed time is equal to or longer than a predetermined first drying liquid supply time. The first drying liquid supply time is set in advance to a time that allows the rinsing liquid to be sufficiently replaced with the first drying liquid.

[0083] Next, the processing unit 1 supplies the second drying liquid to the first main surface Wa of the substrate W (Step S6: second drying liquid supplying step). When the guard 7 for the second drying liquid is different from the guard 7 for the first drying liquid, the guard lifting drive unit 71 lifts and lowers the guard 7 appropriately to raise the guard 7 for the second drying liquid to the upper position. Then, the control unit 90 opens the supply valve 32ib. That is, the control unit 90 switches the supply valve 32ib from a closed state to an open state.

[0084] When the supply valve 32ib opens, as shown in Fig. 6, the second drying liquid is discharged from the discharge port 3ib of the nozzle 30ib toward the first main surface Wa of the substrate W during rotation. The temperature of the second drying liquid may be, for example, room temperature (e.g., 25 degrees Celsius). The temperature of the second drying liquid here is, for example, the temperature of the second drying liquid at the discharge port 3ib. Moreover, the room temperature here includes, for example, the temperature of the second drying liquid when a heater for heating the second drying liquid is not provided upstream of the discharge port 3ib or when the heater is not operating. In other words, the room temperature includes the temperature of the second drying liquid that is not heated.

[0085] The second drying liquid from the nozzle 30ib lands on the center of the first main surface Wa of the substrate W. The second drying liquid that has landed on the first main surface Wa flows radially outward due to centrifugal force accompanying the rotation of the substrate W, and splashes off from the periphery of the substrate W. At this time, the second drying liquid pushes away the first drying liquid on the first main surface Wa of the substrate W, thereby replacing the first drying liquid on the first main surface Wa of the substrate W with the second drying liquid. The processing liquid that has splashed off from the periphery of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0086] Here, the rotation speed of the substrate W in the second drying liquid supplying step may be set to, for example, 150 rpm or more and 600 rpm or less, or 200 rpm or more and 400 rpm or less. As a more specific example, the rotation speed may be set to 300 rpm. The flow rate of the second drying liquid may be preset to, for example, about 100 mL / min or more, more specifically, 250 mL / min or more.

[0087] Furthermore, the processing unit 1 heats the second main surface Wb of the substrate W when supplying the second drying liquid. That is, the substrate heating section 4 heats the second main surface Wb of the substrate W. As a more specific example, the control section 90 opens the supply valve 42 and operates the heater 44. As a result, as shown in Fig. 6, a high-temperature heat medium (e.g., hot water) is discharged from the nozzle 40 toward the center of the second main surface Wb of the rotating substrate W. As a result, the substrate W and the second drying liquid on the first main surface Wa of the substrate W are also heated.

[0088] The substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature (second temperature value). The second temperature may be preset to a value according to the second boiling point of the second drying liquid. The second temperature is, for example, the maximum value in the temperature distribution of the second main surface Wb. As a specific example, the second boiling point of the second drying liquid is higher than the first boiling point of the first drying liquid. For example, when the first drying liquid and the second drying liquid are isopropyl alcohol and hydrofluoroolefin, respectively, the second boiling point of the second drying liquid (110.5 degrees Celsius) is higher than the first boiling point of the first drying liquid (82.4 degrees Celsius). In this case, the second temperature is set higher than the temperature of the second main surface Wb of the substrate W in the first drying liquid supplying step (here, the first temperature). For example, the second temperature may be 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The second temperature may also be higher than the first boiling point of the first drying liquid. The second temperature may be lower than the second boiling point of the second drying liquid. As a specific example, the second temperature may be set to about 89.9 degrees Celsius.

[0089] Specifically, the heater 44 heats the heat medium so that the medium temperature of the heat medium becomes the second medium temperature (second medium temperature value). In the example of FIG. 7, the second medium temperature is higher than the medium temperature (first medium temperature) of the heat medium in the first drying liquid supplying step. The second medium temperature may be, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The second medium temperature may be the first boiling point of the first drying liquid or higher. The second medium temperature may be lower than the second boiling point of the second drying liquid. For example, when the heat medium is water, the second medium temperature may be set to less than 90 degrees Celsius, which is 10 degrees lower than the boiling point of the heat medium (100 degrees Celsius). This makes it possible to comply with the SEMI standard. As a specific example, the second medium temperature may be set to about 89.9 degrees Celsius.

[0090] The flow rate regulating valve 43 may adjust the flow rate of the heat medium to, for example, a value greater than the flow rate of the second drying liquid. More specifically, the flow rate regulating valve 43 may adjust the flow rate of the heat medium to 1000 mL / min or more, or to 1500 mL / min or more.

[0091] As described above, in the second drying liquid supplying step, the processing unit 1 supplies the second drying liquid to the first main surface Wa of the substrate W while heating the second main surface Wb of the substrate W. This also increases the temperature of the second drying liquid on the first main surface Wa of the substrate W. By increasing the temperature of the second drying liquid, it is possible to increase the efficiency of replacement of the first drying liquid with the second drying liquid.

[0092] When the first drying liquid is sufficiently replaced with the second drying liquid, the processing unit 1 dries the substrate W (step S7: drying process). Specifically, the processing unit 1 measures the elapsed time from the start of ejection of the second drying liquid, and judges whether the elapsed time is equal to or longer than a predetermined second drying liquid supply time. The second drying liquid supply time is set in advance to a time that allows the first drying liquid to be sufficiently replaced with the second drying liquid. The second drying liquid supply time is set to, for example, several tens of seconds or more, and as a specific example, may be set to about 40 seconds. Then, when the elapsed time is equal to or longer than the second drying liquid supply time, the processing unit 1 dries the substrate W. Specifically, the control unit 90 closes the supply valve 32ib. Also, the substrate heating unit 4 stops heating the second main surface Wb of the substrate W.

[0093] Furthermore, the control unit 90 causes the substrate holding unit 2 to increase the rotation speed of the substrate W. For example, the substrate holding unit 2 may rotate the substrate W at a rotation speed of 800 rpm or more and 2500 rpm or less, or may rotate the substrate W at a rotation speed of 800 rpm or more and 1500 rpm or less. The substrate holding unit 2 may also increase the rotation speed of the substrate W gradually (for example, in steps).

[0094] The processing unit 1 may supply the inert gas toward the center of the first main surface Wa of the substrate W. Specifically, the control unit 90 may open the supply valve 32g and operate the heater 34g. As a result, high-temperature inert gas is discharged toward the center of the first main surface Wa of the substrate W from a gas discharge port (i.e., the lower end port of the gas flow path 30g) at the center of the lower surface of the facing member 60. The inert gas that hits the center of the first main surface Wa of the substrate W flows radially outward along the first main surface Wa. The heater 34g may heat the inert gas to, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The temperature of the inert gas may be, for example, the temperature of the inert gas at the gas discharge port of the gas flow path 30g. The flow rate adjustment valve 33g may adjust the flow rate of the inert gas to, for example, 10 L (liters) / min or higher and 300 L / min or lower.

[0095] When the second drying liquid has sufficiently evaporated, the processing unit 1 stops the discharge of the inert gas and stops the rotation of the substrate W. As a specific example, the control unit 90 measures the elapsed time from the stop of the discharge of the second drying liquid, and judges whether the measured time is equal to or longer than a predetermined drying time. The drying time is set in advance to a time that allows the substrate W to be sufficiently dried. When the elapsed time is equal to or longer than the drying time, the control unit 90 switches the supply valve 32g from an open state to a closed state, and causes the substrate holder 2 to stop the rotation of the substrate W. In addition, the movement drive unit 35 moves the discharge head to a standby position, and the guard lift drive unit 71 lowers the guard 7 to the lower position.

[0096] Next, the substrate holder 2 releases the hold on the substrate W (step S8: hold releasing step). Then, the second transporter 122 carries the processed substrate W out of the processing unit 1.

[0097] As described above, the processing unit 1 can process the substrate W. Moreover, in this embodiment, a first drying liquid supplying step is performed after a liquid supplying step including a chemical step and a rinsing step, and then a second drying liquid supplying step is performed. FIG. 7 is a timing chart of the processing unit 1 according to the first embodiment, and is a diagram showing a first example of a time change in the medium temperature of the heat medium and a time change in the temperature of the second main surface Wb of the substrate W. In the example of FIG. 7, the maximum value of the temperature distribution of the second main surface Wb is shown as the temperature of the second main surface Wb of the substrate W. This point is similar to other drawings to be referred to later.

[0098] In the example of Fig. 7, at time t1, the control unit 90 switches the supply valve 32ia from a closed state to an open state. As a result, the first drying liquid starts to be discharged from the nozzle 30ia toward the first main surface Wa of the substrate W. At this time t1, the first drying liquid supplying step actually starts. That is, the replacement process of the rinsing liquid with the first drying liquid starts. Since the miscibility of the rinsing liquid and the first drying liquid is higher than that of the rinsing liquid and the second drying liquid, the processing liquid on the substrate W can be replaced from the rinsing liquid to the first drying liquid with higher replacement efficiency than when the rinsing liquid is replaced with the second drying liquid.

[0099] The control unit 90 switches the supply valve 42 from a closed state to an open state, for example, at time t1, and operates the heater 44. This causes a high-temperature heat medium to be discharged from the nozzle 40 toward the second main surface Wb of the substrate W, heating the substrate W. This makes it possible to heat the first drying liquid on the first main surface Wa of the substrate W as well. Since the temperature of the first drying liquid on the first main surface Wa of the substrate W is high, it is possible to increase the efficiency of replacing the rinsing liquid with the first drying liquid. This makes it possible to further reduce the remaining amount of rinsing liquid, which has a large surface tension, at the end of the first drying liquid supplying step.

[0100] In the example of FIG. 7, the medium temperature of the heat medium (first medium temperature) in the first drying liquid supplying step is less than the first boiling point bp1 of the first drying liquid. Therefore, the temperature of the first main surface Wa of the substrate W is also less than the first boiling point bp1. This makes it possible to more reliably suppress boiling of the first drying liquid on the first main surface Wa of the substrate W. If the first drying liquid on the first main surface Wa boils when the first drying liquid is supplied, this will result in adhesion of particles to the first main surface Wa. In the above example, boiling of the first drying liquid can be more reliably suppressed, and therefore adhesion of particles can be more reliably suppressed.

[0101] 7, at time t2, the control unit 90 switches the supply valve 32ia from an open state to a closed state, and switches the supply valve 32ib from a closed state to an open state. At this time t2, the substantial second drying liquid supplying step starts. That is, the replacement process of the first drying liquid with the second drying liquid starts. Since the miscibility of the first drying liquid and the second drying liquid is higher than that of the rinsing liquid and the second drying liquid, the processing liquid on the substrate W can be replaced from the first drying liquid to the second drying liquid with higher replacement efficiency than the replacement of the rinsing liquid with the second drying liquid.

[0102] In the example of FIG. 7, the supply valve 42 remains open even after time t2. As a result, the high-temperature heat medium is discharged from the nozzle 40 toward the second main surface Wb of the substrate W, and the substrate W is heated. Therefore, the second drying liquid on the first main surface Wa of the substrate W can also be heated. In the example of FIG. 7, the second boiling point bp2 of the second drying liquid is higher than the first boiling point bp1 of the first drying liquid. Therefore, the second temperature is set higher than the first temperature. That is, in the first drying liquid supplying step, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a lower first temperature corresponding to the lower first boiling point bp1 of the first drying liquid, and in the second drying liquid supplying step, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a higher second temperature corresponding to the higher second boiling point bp2 of the second drying liquid. That is, the heater 44 increases the amount of heat given to the heat medium at time t2 to raise the medium temperature of the heat medium from the first medium temperature to the second medium temperature.

[0103] Therefore, in the second drying liquid supplying step, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be further increased. That is, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be brought closer to the second boiling point bp2. Therefore, the efficiency of replacement of the first drying liquid with the second drying liquid can be further increased, and the amount of the remaining first drying liquid having a large surface tension can be further reduced at the end of the second drying liquid supplying step. In addition, in the example of FIG. 7, the second medium temperature of the heat medium is equal to or higher than the first boiling point bp1 of the first drying liquid, and the second temperature of the second main surface Wb of the substrate W is also equal to or higher than the first boiling point bp1 of the first drying liquid. Therefore, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be raised to a higher temperature. That is, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be brought closer to the second boiling point bp2, and the efficiency of replacement of the first drying liquid with the second drying liquid can be further increased.

[0104] 7, since the second medium temperature of the heat medium is lower than the second boiling point bp2 of the second drying liquid, the temperature of the first main surface Wa of the substrate W is also lower than the second boiling point bp2. This makes it possible to more reliably suppress boiling of the second drying liquid on the first main surface Wa of the substrate W. Therefore, it is possible to more reliably suppress adhesion of particles.

[0105] Then, in the drying process, the second drying liquid on the first main surface Wa of the substrate W evaporates, and the substrate W is dried. First, in terms of liquid material, the surface tension of the second drying liquid is smaller than that of the first drying liquid. This makes it possible to reduce the collapse rate of the pattern on the first main surface Wa of the substrate W during drying.

[0106] In addition, after the liquid supplying step, the first drying liquid supplying step is performed, and then the second drying liquid supplying step is performed. That is, in the first drying liquid supplying step, the rinsing liquid is replaced with the first drying liquid having high miscibility with the rinsing liquid, and then, in the second drying liquid supplying step, the first drying liquid is replaced with the second drying liquid having high miscibility with the first drying liquid. Therefore, in terms of the liquid material, the rinsing liquid can be replaced with the first drying liquid, and the first drying liquid can be replaced with the second drying liquid with high replacement efficiency. Therefore, at the end of the second drying liquid supplying step, the remaining amount of the rinsing liquid and the first drying liquid, which have high surface tension, can be reduced. This also reduces the collapse rate of the pattern.

[0107] Furthermore, in the first drying liquid supplying step, the first drying liquid on the first main surface Wa of the substrate W is heated, so that the processing liquid on the substrate W is replaced with the first drying liquid from the rinsing liquid with higher replacement efficiency. Therefore, from the viewpoint of temperature as well, the amount of remaining rinsing liquid at the end of the second drying liquid supplying step can be reduced.

[0108] Furthermore, in the second drying liquid supplying step, the second drying liquid on the first main surface Wa of the substrate W is heated to a higher temperature, so the amount of the first drying liquid remaining can also be reduced. This also reduces the rate of collapse of the pattern. Moreover, in the drying step, the second drying liquid evaporates at a higher temperature. This allows the second drying liquid to evaporate in a shorter time. Since the surface tension is smaller as the temperature increases, the second drying liquid evaporates with a low surface tension. This reduction in surface tension due to temperature and increase in evaporation rate can also reduce the rate of collapse of the pattern.

[0109] In the above example, the first boiling point bp1 of the first drying liquid is lower than the second boiling point bp2 of the second drying liquid, but the first boiling point bp1 of the first drying liquid may be higher than the second boiling point bp2 of the second drying liquid. Fig. 8 is a timing chart of the processing unit 1 according to the first embodiment, and a second example of the change in medium temperature of the heat medium over time and the change in temperature of the second main surface Wb of the substrate W over time.

[0110] 8, the first boiling point bp1 of the first drying liquid is higher than the second boiling point bp2 of the second drying liquid. For example, when the first drying liquid and the second drying liquid are isopropyl alcohol and fluoroheptene, respectively, the first boiling point bp1 of the first drying liquid (82.4 degrees Celsius) is higher than the second boiling point bp2 of the second drying liquid (71.5 degrees Celsius).

[0111] In this case, in the second drying liquid supplying step, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature lower than the first temperature. To summarise the examples of Figures 7 and 8, when the first boiling point bp1 is lower than the second boiling point bp2, the first temperature is lower than the second temperature, and when the first boiling point bp1 is higher than the second boiling point bp2, the first temperature is higher than the second temperature. In other words, the sign of the value obtained by subtracting the second temperature from the first temperature is equal to the sign of the value obtained by subtracting the second boiling point bp2 of the second drying liquid from the first boiling point bp1 of the first drying liquid.

[0112] In the example of Fig. 8, the first medium temperature is higher than the second medium temperature. This allows the first temperature to be higher than the second temperature. To summarise the examples of Fig. 7 and Fig. 8, the positive and negative values ​​of the value obtained by subtracting the second temperature from the first temperature are equal to the positive and negative values ​​of the value obtained by subtracting the second medium temperature from the first medium temperature.

[0113] 8, in the first drying liquid supplying step, the temperature of the second main surface Wb of the substrate W is adjusted to a higher first temperature. This makes it possible to bring the temperature of the first drying liquid on the first main surface Wa of the substrate W closer to the first boiling point bp1. This makes it possible to replace the processing liquid on the first main surface Wa of the substrate W from the rinsing liquid to the first drying liquid with higher replacement efficiency in the first drying liquid supplying step.

[0114] On the other hand, in the second drying liquid supplying step, the temperature of the second main surface Wb of the substrate W is adjusted to a second temperature lower than the first temperature. Therefore, in the second drying liquid supplying step, boiling of the second drying liquid on the second main surface Wb can be further suppressed. Moreover, since the substrate W is heated, the first drying liquid is replaced with the second drying liquid with higher replacement efficiency than when the substrate W is not heated.

[0115] In the example of FIG. 8, the first temperature is equal to or higher than the second boiling point bp2 of the second drying liquid. In this regard, to summarise FIG. 7 and FIG. 8, the higher of the first and second temperatures (the second temperature in FIG. 7, and the first temperature in FIG. 8) is equal to or higher than the lower of the first boiling point bp1 and the second boiling point bp2 (the first boiling point bp1 in FIG. 7, and the second boiling point bp2 in FIG. 8). In the example of FIG. 8, since the first temperature is equal to or higher than the second boiling point bp2, the temperature of the first drying liquid on the first main surface Wa of the substrate W can be raised to a higher temperature in the first drying liquid supplying step. For this reason, the processing liquid on the first main surface Wa of the substrate W can be replaced from the rinsing liquid to the first drying liquid with higher replacement efficiency.

[0116] 8, the first temperature is less than the first boiling point bp1 of the first drying liquid, and the second temperature is less than the second boiling point bp2 of the second drying liquid. This makes it possible to more reliably suppress boiling of the first drying liquid in the first drying liquid supplying step, and more reliably suppress boiling of the second drying liquid in the second drying liquid supplying step. This makes it possible to more reliably suppress adhesion of particles.

[0117] Furthermore, the substrate heating section 4 supplies the heat medium to the second main surface Wb of the substrate W to heat the substrate W. This allows the substrate heating section 4 to heat the second main surface Wb of the substrate W with a simple configuration. More specifically, the substrate heating section 4 can heat the second main surface Wb of the substrate W to both a first temperature corresponding to the first boiling point bp1 of the first drying liquid and a second temperature corresponding to the second boiling point bp2 of the second drying liquid with a simple configuration.

[0118] In the above-described first embodiment, the substrate heating section 4 heats the second main surface Wb of the substrate W throughout the entire first drying liquid supplying process. That is, the substrate heating section 4 heats the second main surface Wb of the substrate W throughout the entire first drying liquid supplying time. However, the substrate heating section 4 may heat the second main surface Wb of the substrate W during at least a part of the first drying liquid supplying process. This also makes it possible to increase the temperature of the first drying liquid on the first main surface Wa of the substrate W during that time, thereby improving the replacement efficiency during that time. Similarly, the substrate heating section 4 may heat the second main surface Wb of the substrate W during at least a part of the second drying liquid supplying process.

[0119] In the above example, the discharge unit 3 discharges the first drying liquid and the second drying liquid at room temperature, but may discharge the first drying liquid at a high temperature, or may discharge the second drying liquid at a high temperature. For example, the discharge unit 3 may further include at least one of a first heater (not shown) and a second heater (not shown). The first heater is provided in the supply pipe 31ia and heats the first drying liquid flowing through the supply pipe 31ia. The second heater is provided in the supply pipe 31ib and heats the second drying liquid flowing through the supply pipe 31ib. The first heater and the second heater are controlled by the control unit 90. The first heater heats the first drying liquid so that the temperature of the first drying liquid is higher than room temperature and lower than the first boiling point bp1 of the first drying liquid. For example, the first heater may raise the temperature of the first drying liquid to 60 degrees Celsius or higher, and as a specific example, may raise the temperature to about 70 degrees Celsius. The second heater heats the second drying liquid so that the temperature of the second drying liquid is higher than room temperature and lower than the second boiling point bp2 of the second drying liquid. For example, the second heater may increase the temperature of the second drying liquid to 60 degrees Celsius or higher, and as a specific example, may increase the temperature to about 70 degrees Celsius.

[0120] <Second embodiment> The configuration of the substrate processing apparatus 100 according to the second embodiment is similar to that of the first embodiment. However, in the second embodiment, in the first drying liquid supplying step (step S5), the substrate heating unit 4 may heat at least a part (e.g., the central part) of the second main surface Wb of the substrate W to a first boiling point bp1 or higher of the first drying liquid. Specifically, the substrate heating unit 4 may supply a heat medium having a first boiling point bp1 or higher of the first drying liquid to the central part of the second main surface Wb of the substrate W. Alternatively, in the second drying liquid supplying step (step S6), the substrate heating unit 4 may heat at least a part (e.g., the central part) of the second main surface Wb of the substrate W to a second boiling point bp2 or higher of the second drying liquid. Specifically, the substrate heating unit 4 may supply a heat medium having a second boiling point bp2 or higher of the second drying liquid to the central part of the second main surface Wb of the substrate W. The details will be described below.

[0121] 9 is a timing chart of the processing unit 1 according to the second embodiment, and a diagram illustrating a first example of changes over time in the medium temperature of the heat medium, the temperature of the second main surface Wb of the substrate W, and the temperature of the first main surface Wa of the substrate W. In the example of Fig. 9, the first boiling point bp1 of the first drying liquid is lower than the second boiling point bp2 of the second drying liquid.

[0122] 9, in the first drying liquid supplying step (step S5), the first medium temperature of the heat medium discharged from the nozzle 40 is higher than the first boiling point bp1 of the first drying liquid. When the first drying liquid is isopropyl alcohol, the first boiling point bp1 is 82.4 degrees Celsius, and the first medium temperature of the heat medium is set to, for example, about 85 degrees Celsius. For this reason, the temperature of the portion (for example, the center) where the heat medium lands on the second main surface Wb of the substrate W is also higher than the boiling point of the first drying liquid.

[0123] On the other hand, in the first drying liquid supplying step, the first drying liquid having a lower temperature than the heat medium is discharged from the nozzle 30ia. Therefore, the low-temperature first drying liquid is continuously supplied to the first main surface Wa of the substrate W. Therefore, the low-temperature first drying liquid can cool the first main surface Wa of the substrate W. The cooling capacity of the first drying liquid increases as the flow rate of the first drying liquid increases. Therefore, the flow rate control valve 33ia adjusts the flow rate of the first drying liquid to a value at which the temperature of the first main surface Wa of the substrate W is less than the first boiling point bp1. For example, the flow rate of the first drying liquid is preset to about 100 mL / min or more, more specifically, can be set to 250 mL / min or more.

[0124] 9, the temperature of the central portion of the first main surface Wa of the substrate W is shown as the temperature of the first main surface Wa of the substrate W. Since the high-temperature heat medium lands on the central portion of the second main surface Wb of the substrate W, the temperature of the first main surface Wa of the substrate W has a temperature distribution described below. That is, the temperature is high at the central portion of the substrate W and decreases toward the radially outer side. For this reason, in the example of FIG. 9, the highest value in the temperature distribution of the first main surface Wa of the substrate W is shown as the temperature of the first main surface Wa.

[0125] 9, the temperature of the first main surface Wa of the substrate W in the first drying liquid supplying step is lower than the first boiling point bp1 of the first drying liquid. When the first drying liquid is isopropyl alcohol, the highest temperature in the temperature distribution of the first main surface Wa of the substrate W can be adjusted to, for example, about 80 degrees Celsius or lower. This makes it possible to more reliably suppress boiling of the first drying liquid in the first drying liquid supplying step. This makes it possible to more reliably suppress adhesion of particles to the first main surface Wa of the substrate W.

[0126] Moreover, in the above example, the first medium temperature of the heat medium discharged in the first drying liquid supplying step is equal to or higher than the first boiling point bp1, so that in the first drying liquid supplying step, the maximum value in the temperature distribution on the first main surface Wa of the substrate W can be brought closer to the first boiling point bp1.

[0127] In the second embodiment, in the first drying liquid supplying step, the temperature of the first drying liquid on the first main surface Wa of the substrate W can be made closer to the first boiling point bp1 while increasing the temperature of the substrate W itself. This makes it possible to replace the processing liquid on the first main surface Wa of the substrate W from the rinsing liquid to the first drying liquid with higher replacement efficiency. This makes it possible to further reduce the amount of residual rinsing liquid and further reduce the rate of pattern collapse.

[0128] In the example of FIG. 9, in the second drying liquid supplying step (step S6), the second medium temperature of the heat medium discharged from the nozzle 40 is lower than the second boiling point bp2 of the second drying liquid. Here, the second drying liquid is methoxyperfluoroheptene, and the heat medium is water. That is, the second boiling point bp2 is 110.5 degrees Celsius, and the boiling point of the heat medium is 100 degrees Celsius. Therefore, the second boiling point bp2 is higher than the boiling point of the heat medium. Since the medium temperature of the heat medium needs to be set lower than the boiling point of the heat medium, the second medium temperature of the heat medium in the second drying liquid supplying step is set to about 89.9 degrees Celsius, for example, as in the first embodiment. Therefore, the second temperature is also lower than the boiling point of the heat medium, and therefore lower than the second boiling point bp2 of the second drying liquid.

[0129] 9, since the second temperature is higher than the first temperature, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be made higher in the second drying liquid supplying step, as in the first embodiment. This makes it possible to reduce the pattern collapse rate, as in the first embodiment.

[0130] Next, a case where the first boiling point bp1 is higher than the second boiling point bp2 will be described. Fig. 10 is a timing chart of the processing unit 1 according to the second embodiment, and is a diagram showing a second example of the change over time in the medium temperature of the heat medium, the temperature of the second main surface Wb of the substrate W, and the temperature of the first main surface Wa of the substrate W. In the example of Fig. 10, the first boiling point bp1 of the first drying liquid is higher than the second boiling point bp2 of the second drying liquid. Compared to Fig. 9, the second drying liquid supplying step (step S6) is different.

[0131] In the example of FIG. 10, in the second drying liquid supplying step (step S6), the substrate heating unit 4 heats at least a part (here, the center part) of the second main surface Wb of the substrate W to a second boiling point bp2 of the second drying liquid or higher. Since the second boiling point bp2 is lower than the first boiling point bp1, in the example of FIG. 10, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature lower than the first temperature, as in the first embodiment. Specifically, the second medium temperature of the heat medium discharged from the nozzle 40 is lower than the first medium temperature and higher than the second boiling point bp2 of the second drying liquid. Here, the second drying liquid is fluoroheptene, and the second boiling point bp2 is 71.5 degrees Celsius. The second medium temperature of the heat medium can be set to, for example, about 75 degrees Celsius.

[0132] In the second drying liquid supplying step, the second drying liquid having a lower temperature than the heat medium is discharged from the nozzle 30ib. The cooling capacity of the second drying liquid increases as the flow rate of the second drying liquid increases. Therefore, the flow rate control valve 33ib adjusts the flow rate of the second drying liquid to a value at which the temperature of the first main surface Wa of the substrate W is less than the second boiling point bp2. For example, the flow rate of the second drying liquid is preset to about 100 mL / min or more, more specifically, can be set to 250 mL / min or more.

[0133] 10, the temperature of the first main surface Wa of the substrate W in the second drying liquid supplying step is lower than the second boiling point bp2 of the second drying liquid. The highest temperature in the temperature distribution of the first main surface Wa of the substrate W can be adjusted to, for example, about 70 degrees Celsius or lower. This makes it possible to more reliably suppress boiling of the second drying liquid in the second drying liquid supplying step. This makes it possible to more reliably suppress adhesion of particles to the first main surface Wa of the substrate W.

[0134] Moreover, in the above example, the second medium temperature of the heat medium discharged in the second drying liquid supplying step is equal to or higher than the second boiling point bp2. Therefore, in the second drying liquid supplying step, the maximum value in the temperature distribution on the first main surface Wa of the substrate W can be brought closer to the second boiling point bp2. Therefore, the processing liquid on the first main surface Wa of the substrate W can be replaced from the first drying liquid to the second drying liquid with higher replacement efficiency. Furthermore, in the drying step immediately after the supply of the second drying liquid is stopped, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be made higher. Therefore, in the drying step, the surface tension of the second drying liquid can be further reduced while the evaporation rate of the second drying liquid can be further increased. Therefore, the collapse rate of the pattern can be further reduced.

[0135] <Third embodiment> In the specific examples of the first and second embodiments, the substrate heating unit 4 heats the second main surface Wb of the substrate W to the second temperature throughout the entire second drying liquid supply time in the second drying liquid supplying step (step S6). However, this is not necessarily limited to this.

[0136] 11 is a timing chart of the processing unit 1 according to the third embodiment, and a diagram showing an example of changes over time in the medium temperature of the heat medium and the temperature of the second main surface Wb of the substrate W. In the example of Fig. 11, the second boiling point bp2 of the second drying liquid is higher than the first boiling point bp1 of the first drying liquid. Therefore, in the example of Fig. 11, the second temperature is higher than the first temperature.

[0137] In the example of Fig. 11, the medium temperature of the heat medium remains at the first medium temperature even after time t2, and rises from the first medium temperature to the second medium temperature at time t23 after time t2. That is, the control unit 90 causes the heater 44 to raise the medium temperature of the heat medium at time t23. Specifically, the heater 44 increases the amount of heat provided to the heat medium at time t23, and raises the medium temperature of the heat medium from the first medium temperature to the second medium temperature. Then, the control unit 90 switches the supply valve 42 from the open state to the closed state at time t3 after time t23.

[0138] Therefore, the substrate heating unit 4 heats the second main surface Wb of the substrate W to the second temperature at a predetermined later time T2 from time t23 to time t3 during the second drying liquid supply time T from time t2 to time t3. On the other hand, in the example of FIG. 11, during the earlier time T1 from time t2 to time t23, the temperature of the second main surface Wb of the substrate W is lower than the second temperature, and may be maintained at the first temperature as a more specific example. The later time T2 is set in advance to a time at which the temperature of the first main surface Wa of the substrate W at time t3 sufficiently approaches the second boiling point bp2 of the second drying liquid. For example, the later time T2 may be set to half or less of the second drying liquid supply time T, or may be set to one-third or less, one-quarter or less, or one-tenth or less of the second drying liquid supply time T.

[0139] As described above, in the third embodiment, the substrate heating section 4 heats the second main surface Wb of the substrate W to the second temperature at the latter time T2, and makes the temperature of the second main surface Wb of the substrate W lower than the second temperature at the former time T1. This makes it possible to reduce the power consumption of the substrate heating section 4, and therefore the power consumption of the substrate processing apparatus 100. Moreover, since the temperature of the second drying liquid on the first main surface Wa of the substrate W is sufficiently high at time t3, the second drying liquid can evaporate with a smaller surface tension and in a shorter evaporation time in the drying process. This makes it possible to reduce the collapse rate of the pattern.

[0140] In the example of FIG. 11, although the substrate heating unit 4 supplies a high-temperature heat medium to the second main surface Wb of the substrate W at the previous time T1, the substrate heating unit 4 may not heat the second main surface Wb of the substrate W at the previous time T1. In this case, since the substrate heating unit 4 does not supply a heat medium, the amount of heat medium used can be reduced. When the heat medium is a liquid, liquid saving can be achieved. Furthermore, at the later time T2 after the replacement of the first drying liquid with the second drying liquid has progressed to a certain extent, the replacement efficiency can be increased. Therefore, it is easier to reduce the amount of remaining first drying liquid compared to the case where the second main surface Wb of the substrate W is heated to the second temperature at the previous time T1.

[0141] <Fourth embodiment> In the above example, the processing unit 1 performs the chemical step (step S3), the rinsing step (step S4), the first drying liquid supply step (step S5), the second drying liquid supply step (step S6), and the drying step (step S7) in this order, but this is not necessarily limited to the above.

[0142] Fig. 12 is a flowchart showing a first example of the operation of the processing unit 1 according to the fourth embodiment. In the example of Fig. 12, the control unit 90 causes the processing unit 1 to execute processes from step S11 to step S20 according to a preset processing procedure (recipe). Steps S11 to S15 are similar to steps S1 to S5, respectively. However, in step S15 (first drying liquid supplying step), the substrate heating unit 4 does not have to heat the substrate W.

[0143] Next, the processing unit 1 hydrophobicizes the first main surface Wa of the substrate W (corresponding to step S16: hydrophobization process: liquid supply process). Specifically, the processing unit 1 includes a nozzle that ejects a hydrophobization liquid, and ejects the hydrophobization liquid from the nozzle onto the first main surface Wa of the substrate W during rotation. The hydrophobization liquid includes, for example, a silicon-based hydrophobization liquid. The silicon-based hydrophobization liquid is a hydrophobization liquid that hydrophobicizes silicon (Si) itself and compounds containing silicon. The hydrophobization liquid is, for example, a silylation liquid that includes a liquid silylation agent (also called a silane coupling agent). When the first main surface Wa of the substrate W has been sufficiently hydrophobized, the processing unit 1 stops ejecting the hydrophobization liquid from the nozzle.

[0144] Next, the processing unit 1 executes steps S17 to S20, which are similar to steps S5 to S8, respectively.

[0145] As described above, in the first example described above, a first drying liquid supplying step (step S17) and a second drying liquid supplying step (step S18) are performed similarly to the first drying liquid supplying step (step S5) and the second drying liquid supplying step (step S6) in each of the first to third embodiments. This makes it possible to reduce the collapse rate of the pattern on the substrate W. Moreover, since the first main surface Wa of the substrate W is hydrophobized, the contact angle of the first main surface Wa can be reduced. This makes it possible to reduce the surface tension acting on the pattern, and further reduce the collapse rate of the pattern.

[0146] FIG. 13 is a flowchart showing a second example of the operation of the processing unit 1 according to the fourth embodiment. In the example of FIG. 13, the control unit 90 causes the processing unit 1 to execute the processes from step S21 to step S27 according to a preset processing procedure (recipe). Steps S21 to S27 are similar to steps S1 to S3 and steps S5 to S8, respectively. However, at the end of step S23 (chemical liquid step: corresponding to liquid supply step), metal is exposed on the first main surface Wa of the substrate W. According to the second example, step S24 (first drying liquid supply step) is performed after step S23. Therefore, water is not supplied to the first main surface Wa of the substrate W. Therefore, it is possible to avoid a reaction between the metal and water, and to avoid problems caused by the reaction. Also in the above-mentioned second example, a first drying liquid supplying step (step S24) and a second drying liquid supplying step (step S25) are executed similarly to the first drying liquid supplying step (step S5) and the second drying liquid supplying step (step S6) in each of the first to third embodiments, so that the collapse rate of the pattern on the substrate W can be reduced.

[0147] <Fifth embodiment> FIG. 14 is a diagram showing an example of the configuration of the processing unit 1 according to the fifth embodiment. The processing unit 1 according to the fifth embodiment differs from the processing unit 1 according to the first embodiment in the configuration of the discharge unit 3 and the facing member 60. In the example of FIG. 14, the facing member 60 includes a blocking plate 6 and a hollow shaft 61. The blocking plate 6 is provided at a position facing the first main surface Wa of the substrate W held by the substrate holding unit 2 in the vertical direction. In the example of FIG. 14, since the first main surface Wa of the substrate W corresponds to the upper surface, the blocking plate 6 is provided vertically above the substrate W. The blocking plate 6 has, for example, a plate-like shape, and is provided with its thickness direction along the vertical direction. The lower surface of the blocking plate 6 is a facing surface facing the first main surface Wa of the substrate W. The blocking plate 6 has, for example, a circular shape in a plan view. The diameter of the blocking plate 6 (i.e., the diameter of the facing surface) may be, for example, 80% or more of the diameter of the substrate W, or may be 90% or more, or may be equal to or greater than the diameter of the substrate W.

[0148] In the example of FIG. 14, a hollow shaft 61 is provided on the upper surface of the blocking plate 6. The hollow shaft 61 has a hollow portion, and a through hole is formed in the center of the blocking plate 6, passing through the blocking plate 6 in the vertical direction. The hollow portion is connected to the through hole of the blocking plate 6 in the vertical direction. The nozzle 30i is provided in the hollow portion of the hollow shaft 61 and the through hole of the blocking plate 6. The diameter of the outer peripheral surface of the nozzle 30i is smaller than the diameters of the inner peripheral surfaces of the hollow shaft 61 and the blocking plate 6. The space between the outer peripheral surface of the nozzle 30i and the inner peripheral surfaces of the hollow shaft 61 and the blocking plate 6 functions as a gas flow path 30g.

[0149] 14, the nozzle 30i is connected to the downstream end of the supply pipe 31i, and the upstream end of the supply pipe 31i is connected to the downstream end of the supply pipe 31ia and the downstream end of the supply pipe 31ib. In this structure, when the supply valve 32ia is opened, the first drying liquid is discharged from the nozzle 30i. When the supply valve 32ib is opened, the second drying liquid is discharged from the nozzle 30i. In other words, the nozzle 30i is used in common for both the first drying liquid and the second drying liquid.

[0150] 14, nozzle 30c and nozzle 30w are provided outside facing member 60. Also, in the example of Fig. 14, movement drive unit 35c and movement drive unit 35w are provided as movement drive unit 35. Movement drive unit 35c moves nozzle 30c between a processing position and a standby position, and movement drive unit 35w moves nozzle 30w between the processing position and the standby position.

[0151] In the example of FIG. 14, a moving drive unit 35i is provided as the moving drive unit 35. The moving drive unit 35i moves the nozzle 30i and the opposing member 60 together. The moving drive unit 35i moves the nozzle 30i and the opposing member 60 together, for example, along the vertical direction. In this case, the moving drive unit 35i can also be said to be an elevation drive unit. The moving drive unit 35i includes a drive source such as a motor, and a power transmission unit that transmits power from the drive source to the nozzle 30i and the blocking plate 6. The power transmission unit includes, for example, a cam mechanism or a ball screw mechanism.

[0152] The operation of the processing unit 1 according to the fifth embodiment is similar to that of the flowchart in Fig. 4. However, the movement driver 35i lowers the nozzle 30i and the opposing member 60 to a processing position closer to the substrate W in the first drying liquid supplying step, the second drying liquid supplying step, and the drying step, and raises them to a standby position higher than the processing positions in the other steps.

[0153] In the fifth embodiment, the first drying liquid supplying step (step S5) and the second drying liquid supplying step (step S6) in each of the first to third embodiments are also performed, so that the collapse rate of the pattern can be reduced.

[0154] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is merely an example in all respects, and this disclosure is not limited thereto. In addition, the above-mentioned various modified examples can be combined and applied as long as they are not mutually inconsistent. It is understood that many modified examples not exemplified can be envisioned without departing from the scope of this disclosure.

[0155] In the examples of the first to fourth embodiments, a dedicated nozzle is provided for each fluid, but similar to the nozzle 30i of the fifth embodiment, one nozzle may be shared by different types of fluids. On the other hand, in the fifth embodiment, a dedicated nozzle may be provided for each of the first drying liquid and the second drying liquid. Alternatively, one nozzle may be shared by different types of fluids.

[0156] In the above example, the substrate heating section 4 supplies a heat medium to the second main surface Wb of the substrate W, but this is not necessarily limited to this. The substrate heating section 4 may include, for example, a heater provided at a position vertically facing the second main surface Wb of the substrate W. The heater may be, for example, an electric resistance heater including an electric heating wire, or an optical heater that outputs light for heating. [Explanation of symbols]

[0157] bp1 1st boiling point bp2 2nd boiling point S1, S11, S21 Holding process (step) S4, S16, S23 Liquid supply process (step) S5, S17, S24 First drying liquid supplying step (step) S6, S18, S25 2nd drying liquid supply process (step) S7, S19, S26 Drying process (step) T Drying liquid supply time (second drying liquid supply time) T1 Pre-time Time after T2 W substrate Wa First main surface Wb 2nd principal surface

Claims

1. a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface; a liquid supplying step of supplying a processing liquid to the first main surface of the substrate; a first drying liquid supplying step of supplying a first drying liquid having a first boiling point and a surface tension lower than that of the processing liquid to the first main surface of the substrate after the liquid supplying step; a second drying liquid supplying step of supplying, after the first drying liquid supplying step, a second drying liquid having a second boiling point different from the first boiling point and a surface tension lower than that of the first drying liquid onto the first main surface of the substrate; a drying step of drying the substrate after the second drying liquid supplying step; Equipped with heating the second main surface of the substrate to a first temperature during at least a portion of the first drying liquid supplying step; heating at least a portion of the second main surface of the substrate to a second temperature different from the first temperature during at least a portion of the second drying liquid supplying step; a positive or negative sign of a value obtained by subtracting the second temperature from the first temperature is the same as a positive or negative sign of a value obtained by subtracting the second boiling point from the first boiling point.

2. 2. The substrate processing method according to claim 1, In the first drying liquid supplying step, a heat medium having a first medium temperature is supplied to the second main surface of the substrate; In the second drying liquid supplying step, the heat medium having a second medium temperature is supplied to the second main surface of the substrate; a positive or negative sign of a value obtained by subtracting the second medium temperature from the first medium temperature is the same as a positive or negative sign of a value obtained by subtracting the second boiling point from the first boiling point.

3. 3. The substrate processing method according to claim 1, further comprising the steps of: a higher temperature of the first temperature and the second temperature is equal to or higher than a lower temperature of the first boiling point and the second boiling point.

4. 3. The substrate processing method according to claim 1, further comprising the steps of: A substrate processing method, wherein miscibility between the processing liquid and the first drying liquid is higher than miscibility between the processing liquid and the second drying liquid.

5. 3. The substrate processing method according to claim 1, further comprising the steps of: a first drying liquid supplying step of supplying the first drying liquid to the first main surface of the substrate at a flow rate such that the temperature of the first main surface of the substrate is lower than the first boiling point of the first drying liquid while heating at least a portion of the second main surface of the substrate to a first boiling point or higher of the first drying liquid.

6. 3. The substrate processing method according to claim 1, further comprising the steps of: a second drying liquid supply step of supplying the second drying liquid to the first main surface of the substrate at a flow rate such that a temperature of the first main surface of the substrate is lower than the second boiling point of the second drying liquid while at least a portion of the second main surface of the substrate is heated to a temperature equal to or higher than the second boiling point of the second drying liquid.

7. 3. The substrate processing method according to claim 1, further comprising the steps of: the second temperature is greater than the first temperature; a second drying liquid supply time for supplying the second drying liquid, during a first period of time during which the second drying liquid is supplied, the temperature of the second main surface of the substrate is lower than the second temperature, and during a second period of time during which the second drying liquid is supplied, the second main surface of the substrate is heated to the second temperature.

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