Light-emitting device, display device, electronic apparatus, and manufacturing method of the light-emitting device

Abstract

To prevent corrosion against a pad electrode of a light-emitting device to improve reliability.SOLUTION: A light-emitting device comprises: a pixel region having a plurality of light-emitting elements; an electrode terminal for being electrically connected to an external terminal; a peripheral region containing a first insulation layer distributed onto the electrode terminal and a second insulation layer distributed onto the first insulation layer. The external terminal comprises a first metal layer exposed to a first open provided to the first insulation layer. An upper surface of the first insulation layer is inclined to a bottom part of the first metal layer on an end part on the side of the first open. The second insulation layer includes a second open in the first open. In the first open, the second insulation layer is contacted to the electrode terminal.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] Organic EL elements are becoming the main type of color display devices, replacing liquid crystal displays, because they are self-emitting elements, have a fast response speed, do not require a backlight, and consume little power. Organic EL elements are required to have higher performance (higher definition, higher brightness, higher color purity) as well as higher reliability.

[0003] On the other hand, it is known that the organic compounds used as light-emitting materials in organic EL elements have low moisture resistance, and that moisture that penetrates from the outside can cause dark spots and leakage current. Therefore, technologies have been developed to reduce the penetration of moisture into organic EL elements. As a structure for improving the sealing performance of a pad section for external data output, Patent Document 1 describes a structure in which an insulating film with different moisture permeability is formed and etched twice. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-73760 A Summary of the Invention [Problem to be solved by the invention]

[0005] In the organic electroluminescence (OLED) display device shown in Patent Document 1, the deposition and etching of an insulating film are performed twice to prevent moisture from entering the connection parts (bonding pads, ACF pads) with an external circuit. As a result, the yield of ACF connections may decrease depending on the shape of the formed pads, and the reliability of the pads may decrease.

[0006] In view of the above, an object of the present disclosure is to provide a light emitting device capable of improving the reliability of the pads. [Means for solving the problem]

[0007] A first aspect of the present disclosure is a light-emitting device having a pixel region in which a plurality of light-emitting elements are arranged, and a peripheral region in which electrode terminals for electrical connection to external terminals and an insulating layer covering the electrode terminals are arranged, The electrode terminal is an electrode terminal formed of a first metal layer exposed through an opening in the insulating layer; an insulating layer disposed on the first metal layer; a sealing layer disposed on the insulating layer, an upper surface of the insulating layer is inclined with respect to the first metal layer at an end of the opening side; The light emitting device is characterized by the above.

[0008] A second aspect of the present disclosure is forming a metal portion including a first metal layer and a second metal layer disposed on the first metal layer; forming an insulating layer on the metal portion; isotropically etching the insulating layer using the second metal layer as an etching stop layer to form an opening in the insulating layer; forming an encapsulation layer over the insulating layer and the second metal layer; anisotropically etching the encapsulation layer to remove the second metal layer, and forming a pad opening in the encapsulation layer to expose the first metal layer in the pad opening; The present invention relates to a method for manufacturing a light emitting device having the above structure. Effect of the Invention

[0009] According to the present disclosure, it is possible to improve the reliability of the pads of a light emitting device. [Brief description of the drawings]

[0010] [Figure 1] 1 is an overall plan view of a light emitting device according to a first embodiment. [Diagram 2]2 is a cross-sectional view taken along the cut line A in FIG. 1 . [Diagram 3] FIG. 3 is a cross-sectional view of a pad portion in the first embodiment. [Figure 4] FIG. 3 is a cross-sectional view of the pad shown in FIG. 2 before opening. [Figure 5A] 4A to 4C are diagrams illustrating a manufacturing process of the pad opening in the first embodiment. [Figure 5B] 4A to 4C are diagrams illustrating a manufacturing process of the pad opening in the first embodiment. [Figure 5C] 4A to 4C are diagrams illustrating a manufacturing process of the pad opening in the first embodiment. [Figure 5D] 4A to 4C are diagrams illustrating a manufacturing process of the pad opening in the first embodiment. [Figure 5E] 4A to 4C are diagrams illustrating a manufacturing process of the pad opening in the first embodiment. [Figure 5F] 4A to 4C are diagrams illustrating a manufacturing process of the pad opening in the first embodiment. [Figure 6] 11 is a cross-sectional view of a pad opening of a light-emitting device according to a second embodiment. [Figure 7A] 10A to 10C are diagrams illustrating a manufacturing process of a pad opening in the second embodiment. [Figure 7B] 10A to 10C are diagrams illustrating a manufacturing process of a pad opening in the second embodiment. [Figure 7C] 10A to 10C are diagrams illustrating a manufacturing process of a pad opening in the second embodiment. [Figure 7D] 10A to 10C are diagrams illustrating a manufacturing process of a pad opening in the second embodiment. [Figure 7E] 10A to 10C are diagrams illustrating a manufacturing process of a pad opening in the second embodiment. [Figure 7F] 10A to 10C are diagrams illustrating a manufacturing process of a pad opening in the second embodiment. [Figure 8] 11A and 11B are diagrams illustrating a pixel structure of a display device according to a third embodiment. [Figure 9] FIG. 1 is a schematic diagram illustrating an example of a display device according to an embodiment. [Figure 10] FIG. 1 is a schematic diagram illustrating an example of an imaging device and an electronic device according to an embodiment; [Figure 11] FIG. 1 is a schematic diagram illustrating an example of a display device according to an embodiment. [Figure 12] FIG. 1 is a schematic diagram illustrating an example of a lighting device according to an embodiment. [Figure 13] FIG. 1 is a schematic diagram showing an example of a wearable device according to an embodiment. [Figure 14] 1 is a schematic diagram of an image forming apparatus according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description and drawings, common reference numerals are used to designate components common to multiple drawings. Therefore, common components will be described with mutual reference to multiple drawings, and descriptions of components with common reference numerals will be omitted as appropriate.

[0012] Example 1 Fig. 1 is a plan view of an organic EL display device 100 to which the present invention is applied, and Fig. 2 is a cross-sectional view of the display device 100 taken along the cutting line A. The display device 100 has a pixel array 110 in which pixels including a plurality of light-emitting elements are arranged, and a pad arrangement region 120 in which pads (electrode terminals) for electrically connecting the pixels of the display device 100 to external terminals are arranged. The pad arrangement region 120 is also referred to as a peripheral region. The pixel array 110 and the pad arrangement region 120 are arranged on a silicon substrate 200.

[0013] The pixel array 110 has a plurality of organic light-emitting layers 212, a plurality of transistors 201 for driving the layers, and wiring layers 203, 205, and 207. The wiring layers are connected by plugs 204, 206, and 208. The pixel array 110 also has a wiring layer 203 made of silicon. It has a plug 202 for connection to a substrate 200. An insulating layer 209 is disposed between the wiring layers 203, 205, and 207 and the plugs 202, 204, 206, and 208.

[0014] The silicon substrate 200 is a single crystal silicon layer having a thickness of, for example, 750 to 800 μm, preferably 770 to 780 μm.

[0015] The pixel array 110 includes an upper electrode 213 for applying a voltage to the organic light-emitting layer 212 and a lower electrode 210 above and below the organic light-emitting layer 212, and the lower electrode 210 is connected to the wiring layer 207 by a plug 208. A sealing layer 214 for ensuring a long life is disposed above the organic light-emitting layer 212. The sealing layer 214 can be made of any material generally used in semiconductor devices. For example, a silicon nitride film, which is a light-transmitting and dense film, is used as the material for the sealing layer 214. The sealing layer 214 has a three-layer structure in which a metal layer is sandwiched between insulating layers. Specifically, the sealing layer 214 is made of three layers, a first sealing layer 215, a second sealing layer 216, and a third sealing layer 217. The first sealing layer 215 and the third sealing layer 217 are made of a silicon nitride film (Si N), and the second sealing layer 216 can be an alumina film (Al2O3) formed by the ALD method.

[0016] The transistor 201 can be formed by a known semiconductor process technology. The contact plug 202 can be made of a high melting point metal such as tungsten. The wiring layers 203, 205, and 207 are assumed to be made of aluminum wiring or tungsten plugs, but a copper material may also be used. The insulating layer 209 can be made of a silicon-based insulating film such as a silicon oxide film, a silicon nitride film, or a silicon carbide film. It may also include a low-k material with a low dielectric constant.

[0017] In order to electrically connect the display device 100 to the outside, a pad opening 218 is arranged in the pad arrangement region 120, and a pad electrode 121 is arranged at the bottom of the pad opening 218. A metal material such as aluminum is used for the pad electrode 121. The pad electrode 121 is formed by exposing a metal layer through the pad opening 218. In this embodiment, the pad electrode 121 is formed at the same time as the wiring layer 207. That is, the pad electrode 121 and the wiring layer 207 have approximately the same film configuration and film thickness. However, when the pad opening 218 is formed, the film thickness of the pad opening 218 portion of the pad electrode 121 may be thinner than that outside the opening.

[0018] 3 shows an enlarged cross-sectional view of the pad portion. A second metal layer 302 is disposed on the upper layer of the pad electrode 121. The second metal layer 302 may be made of, for example, titanium or titanium nitride.

[0019] An insulating layer 209 is disposed on second metal layer 302. In the present disclosure, "a second layer is disposed on a first layer" includes a case in which the second layer is disposed in contact with the first layer, and a case in which the first layer and the second layer are disposed such that one or more third layers are included between the first layer and the second layer.

[0020] The insulating layer 209 may be, for example, a silicon oxide film formed by plasma CVD. The upper surface of the insulating layer 209 has a shape with an inclination with respect to the pad electrode 121 at the end on the pad opening 218 side. The inclination of the insulating layer 209 is such that the film thickness of the insulating layer 209 becomes thinner as it approaches the pad opening 218. The insulating layer 209 is disposed away from the pad opening 218, and is not adjacent to the pad opening 218. Here, the inclination angle of the surface of the insulating layer 209 with respect to the pad electrode 121 is defined as Θ. By forming an opening in the insulating layer 209 by isotropic etching, a shape with an inclination can be formed at the end of the insulating layer 209. The inclination angle Θ can be controlled to some extent by the processing conditions of the isotropic etching. In addition, depending on the processing conditions of the isotropic etching, the inclination may not be flat but may have a curved shape.

[0021] The sealing layer 214 is disposed on the insulating layer 209. The sealing layer 214 extends from the pixel array 110, and is composed of three layers, a first sealing layer 215, a second sealing layer 216, and a third sealing layer 217, in the same manner as the pixel array 110. The sealing layer 214 has a shape having a portion with an inclination with respect to the pad electrode 121 near the pad opening 218. This shape is obtained because the sealing layer 214 is formed on the inclination of the insulating layer 209. Here, the inclination angle of the surface of the sealing layer 214 with respect to the pad electrode 121 is Θ'. In addition, in the region adjacent to the pad opening 218, the upper surface of the sealing layer 214 is not inclined and is parallel to the pad electrode 121. In addition, in this region, the insulating layer 209 is not disposed between the sealing layer 214 and the second metal layer 302, and the sealing layer 214 is disposed on the second metal layer 302.

[0022] The side surface (inclined surface) of the pad opening 218 of the insulating layer 209 is covered with the sealing layer 214, and the insulating layer 209 is not exposed. By reducing the intrusion of moisture through the insulating layer 209, the deterioration of the light-emitting layer 212 can be prevented, and defects such as poor light emission can be reduced.

[0023] It is preferable that the inclination angle Θ of the insulating layer 209 is 20 degrees or more and 50 degrees or less. This is because, when the inclination of the insulating layer 209 is as described above, there is a low possibility that voids will occur during the formation of the sealing layer 214. If voids occur, the target area will become a path for moisture to penetrate, causing the light-emitting layer to deteriorate and causing defects such as poor light emission. Therefore, in the present disclosure, the inclination of the insulating layer 209 is made gentle, thereby reducing the concern that voids will occur in the sealing layer 214. However, if the inclination of the insulating layer 209 is made too small, there is a drawback in that the dimensions of the pad opening 218 become large. Therefore, by setting the inclination angle Θ of the insulating layer 209 to 20 degrees or more and 50 degrees or less, it is possible to suppress voids and reduce the size of the pad opening 218 at the same time.

[0024] Since insulating layer 209 has a slope, a similar slope also occurs when forming sealing layer 214 thereover. With this shape, when an anisotropic conductive film (ACF) is used for mounting, conductive particles can easily enter the pad openings during bonding, improving the yield. However, if the slope is too small, there is a drawback in that the dimensions of pad opening 218 become large. By setting the slope angle Θ' of sealing layer 214 to be between 20 degrees and 50 degrees, it is possible to improve the yield and reduce the size of pad opening 218 at the same time. The slope angle Θ' may be the same angle as the slope angle Θ, or may be a different angle.

[0025] The sidewall of the pad opening 218 is formed by the exposed sealing layer 214 and the second metal layer 302, and the pad electrode 121 is disposed on the bottom surface of the pad opening 218. Since the insulating layer 209 is disposed to be set back from the pad opening 218, the insulating layer 209 is not exposed on the sidewall of the pad opening 218. The pad opening 218 is formed by anisotropic etching of the sealing layer 214. At this time, the second metal layer 302 functions as an etching stop layer. Even if there is a variation in the thickness of the sealing layer 214, it is possible to minimize the amount of scraping of the pad electrode 121. Since the pad electrode 121 is scraped by etching, the pad electrode 121 has a recess in the portion of the pad opening 218 and is thinner than the portion other than the pad opening 218. The depth T1 of the recess is, for example, 1 nm or more and 100 nm or less.

[0026] With such a structure, it is possible to prevent the pad electrode 121 from being excessively etched, thereby minimizing corrosion of the pad due to immersion in water in the subsequent mounting process, and suppressing a decrease in the reliability of the pad.

[0027] Hereinafter, a method for manufacturing the display device 100 of the present disclosure will be described with reference to FIG. 4 and FIG. 5A to FIG. 5F. Each figure shows the steps up to forming the pad opening 218 for connecting the pad electrode 121 to the outside. 1 shows cross-sectional views of each step.

[0028] Fig. 4 is a diagram showing the cross-sectional structure before the pads are opened. Of the structure shown in Fig. 1, the pixel array 110 is formed up to the lower electrode 210 and the insulating layer 211, and the pad arrangement region 120 is formed up to the insulating layer 209. The manufacturing method up to the process in Fig. 4 can be a commonly used method.

[0029] Figures 5A to 5F are diagrams for explaining the process flow of opening pads, and are enlarged views of the pad arrangement area 120 in Figure 1 or Figure 4. Figures 4 and 5A are diagrams showing the state after the same process.

[0030] First, as shown in FIG. 5A, a second barrier metal 302 is disposed on the pad electrode 121, and an insulating layer 209 is formed thereon. These are formed simultaneously with the pixel array 110. The pad electrode 121 is made of a material containing, for example, aluminum (Al) and 5% by weight of copper (Cu), and the second barrier metal 302 is made of, for example, titanium nitride (TiN). A first barrier metal 301 may be disposed under the pad electrode 121. The first barrier metal 301 is made of, for example, titanium (Ti) or titanium nitride (TiN), and the insulating layer 209 is made of, for example, a silicon oxide film (SiO) formed by a plasma CVD method.

[0031] Pad opening boundary 218a indicates the location of pad opening 218 that will be provided in a later process.

[0032] 5B, photolithography is used to form a photoresist 501 as a protective film for forming an opening by etching the insulating layer 209. The photoresist 501 has an opening at a position recessed from the pad opening boundary 218a.

[0033] Thereafter, as shown in FIG. 5C, an opening is formed in the insulating layer 209 by isotropic etching. By processing the insulating layer 209 by isotropic etching, the insulating layer 209 has a shape with an inclination with respect to the pad electrode 121. For the isotropic etching, for example, wet etching using buffered hydrofluoric acid can be used, which makes it possible to easily leave the second barrier metal 302 and prevent the pad electrode 121 from being exposed. If the second barrier metal 302 can be left, isotropic dry etching may be used. Since the photoresist 501 has an opening at a position set back from the pad opening boundary 218a, the opening in the insulating layer 209 is formed set back from the pad opening boundary 218a. After the opening is formed in the insulating layer 209, the photoresist 501 is removed.

[0034] Next, as shown in FIG. 5D, a sealing layer 214 is formed on the insulating layer 209 and the opening of the insulating layer 209. The sealing layer 214 is also formed on the pixel array 110 at the same time. The sealing layer 214 is, for example, a silicon nitride film formed by a plasma CVD method, and is composed of three layers including an alumina film (Al2O3) formed by an ALD (Atomic Layer Deposition) method between the layers. By adopting a film with a lower moisture permeability than insulating layer 209, sealing layer 214 can function as a film blocking moisture from the outside. Also, by providing a slope at the end of insulating layer 209, it is possible to reduce the concern that voids will occur during the formation of sealing layer 214. Furthermore, by forming sealing layer 214 with a similar slope along the slope of the opening of insulating layer 209, it is possible to obtain an effect of improving yield, for example, by making it easier for conductive particles to enter the pad opening when bonding an anisotropic conductive film (ACF).

[0035] Next, as shown in FIG. 5E, a photoresist 502 is formed on the sealing layer 214 by photolithography. The photoresist 502 functions as a protective film for etching the sealing layer 214 to form an opening. The opening of the photoresist 502 corresponds to the pad opening boundary. The configuration is such that it substantially coincides with boundary 218a.

[0036] Next, as shown in FIG. 5F, an opening is formed in the sealing layer 214 by anisotropic etching, the second barrier metal 302 is removed, and the pad electrode 121 is exposed. For the anisotropic etching, for example, plasma etching (RIE) using C4F8 or CF4-based gas can be used. At this time, since the insulating layer 209 is formed to be set back from the pad opening 218, the side wall of the pad opening 218 is covered with the sealing layer 214. With such a structure, it is possible to reduce the intrusion of moisture from the pad opening 218 through the insulating layer 209, and it is possible to reduce the deterioration of the light-emitting layer 212 and the defects such as poor light emission. Thereafter, the photoresist 502 is removed to complete the pad opening 218.

[0037] As is clear from a comparison with the conventional technology, in the conventional technology, the pad electrode 121 is exposed to two etchings at the opening, that is, the insulating layer 209 and the sealing layer 214, whereas in this embodiment, the sealing layer 214 is etched only once. Therefore, it is possible to reduce the amount of scraping T1 of the pad electrode 121. This provides high reliability against corrosion of the pad electrode 121 caused by long-term immersion in water during, for example, a dicing step in the mounting process.

[0038] Example 2 FIG. 6 is a cross-sectional view of the second embodiment. The difference from the first embodiment is that the insulating layer 209 has a two-step inclination, and the sealing layer 214 formed thereon also has a similar inclination. The insulating layer 209 has a first inclined portion whose upper surface is inclined with respect to the pad electrode 121, a parallel portion whose upper surface is parallel to the pad electrode 121, and a second inclined portion whose upper surface is inclined with respect to the pad electrode 121. The two-step inclination of the insulating layer 209 can further reduce the concern that a gap will be generated in the sealing layer 214 at the step portion. In addition, the two-step inclination of the sealing layer 214 can provide an effect of improving yield by making it easier for charged particles to enter the pad opening during bonding when an anisotropic conductive film (ACF) is used during mounting. In this embodiment, an example in which the inclination angles of the insulating layer 209 are all Θ is shown, but the inclination angle can also be changed.

[0039] A method of producing the second embodiment will be described with reference to FIGS. 7A to 7F.

[0040] First, as shown in FIG. 7A, a second barrier metal 302 is disposed on the pad electrode 121, and an insulating layer 209 is formed thereon.

[0041] Next, as shown in Fig. 7B, photolithography is used to form photoresist 501 as a protective film for etching insulating layer 209. Photoresist 501 has an opening at a position set back from pad opening boundary 218a. Here, the edge of the opening of photoresist 501 is set as photoresist opening boundary 501a. Up to this point, the process is the same as in the first embodiment.

[0042] Thereafter, isotropic etching is performed on insulating layer 209 as shown in Fig. 7C. The difference from the first embodiment is that the etching is stopped halfway through insulating layer 209. By processing insulating layer 209 by isotropic etching, insulating layer 209 is shaped to have an inclination angle Θ with respect to pad electrode 121. After etching insulating layer 209, photoresist 501 is removed.

[0043] Next, as shown in FIG. 7D, photolithography is used to form a photoresist 503 as a protective film for further etching the insulating layer 209 to form an opening. Here, the edge of the opening of the photoresist 503 is defined as a photoresist opening boundary 503a. The photoresist opening boundary 503a is defined as a boundary between the pad opening boundary 218a and the photoresist opening boundary 501. It is characterized by being located between a.

[0044] Next, as shown in FIG. 7E, the insulating layer 209 is further isotropically etched to form an opening. Since the photoresist opening boundary 503a is located between the pad opening boundary 218a and the photoresist opening boundary 501a, a portion having an inclination angle Θ is formed inside the inclined portion formed in FIG. 7C. By performing such processing, a structure in which the inclination of the insulating layer 209 is two steps can be created. In this embodiment, the inclination angles of the two steps are equal by performing two isotropic etchings under the same conditions, but it is also possible to make the inclination angles of the two steps somewhat different by using different conditions. It is also possible to provide three or more inclination steps by increasing the number of times of isotropic etching.

[0045] 7F, sealing layer 214 is formed on insulating layer 209 and the opening of insulating layer 209. Since insulating layer 209 has a two-step incline, sealing layer 214 also has a two-step incline. Here, the inclination angle of sealing layer 214 is designated as Θ'.

[0046] Thereafter, the pad opening 218 is formed in the same manner as in the first embodiment.

[0047] With this manufacturing method, it is possible to form a structure like that of the second embodiment.

[0048] Example 3 Another example of an organic EL device having a sealing structure for the pad opening portion similar to the above embodiment will be described.

[0049] [Structure of organic light-emitting element] The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer may be made of acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0050] [substrate] Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. In addition, a switching element such as a transistor and wiring may be provided on the substrate, and an insulating layer may be provided thereon. As the insulating layer, any material can be used as long as it can form a contact hole so that wiring can be formed between the first electrode and the insulating layer, and insulation from wiring that is not connected can be ensured. For example, resin such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0051] [electrode] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0052] The material constituting the anode should have as large a work function as possible. For example, metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, etc., mixtures containing these metals, alloys combining these metals, metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0053] These electrode materials may be used alone or in combination of two or more kinds. The anode may be composed of a single layer or a plurality of layers.

[0054] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. The above materials can also function as a reflective film without serving as an electrode. When used as a transparent electrode, a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0055] On the other hand, the material for the cathode should have a small work function. Examples of the material include alkali metals such as lithium, alkaline earth metals such as calcium, aluminum, titanium, manganese, silver, lead, chromium, and other metals or mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, and the like can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used alone or in combination of two or more types. The cathode may have a single layer structure or a multi-layer structure. Among these, it is preferable to use silver, and it is even more preferable to use a silver alloy to reduce the aggregation of silver. As long as the aggregation of silver can be reduced, the ratio of the alloy is not important. For example, the ratio of silver to other metals may be 1:1, 3:1, and the like.

[0056] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but it is more preferable to use a direct current or alternating current sputtering method, etc., since the film coverage is good and the resistance can be easily reduced.

[0057] [Pixel isolation layer] The pixel separation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed by chemical vapor deposition (CVD). In order to increase the resistance in the in-plane direction of the organic compound layer, it is preferable that the organic compound layer, particularly the hole transport layer, is thinly formed on the sidewall of the pixel separation layer. Specifically, the thickness of the sidewall can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer to increase vignetting during deposition.

[0058] On the other hand, it is preferable to adjust the sidewall taper angle and film thickness of the pixel separation layer to such an extent that no voids are formed in the protective layer formed thereon. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0059] According to this embodiment, even if the taper angle of the sidewall of the pixel separation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels. As a result of this study, it was found that the charge leakage can be sufficiently reduced if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The thickness of the pixel separation layer is preferably 10 nm or more and 150 nm or less. The same effect can be obtained even if the pixel separation layer is composed only of a pixel electrode without a pixel separation layer. However, in this case, it is preferable that the thickness of the pixel electrode is half or less than that of the organic layer, or the edge of the pixel electrode is forward tapered by less than 60 degrees, since this reduces short circuits in the organic light-emitting element.

[0060] [Organic compound layer] The organic compound layer may be formed as a single layer or as multiple layers. When the organic compound layer has multiple layers, it may be called a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc., depending on its function. The organic compound layer is mainly composed of an organic compound, but may also contain inorganic atoms and inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0061] In the case where a plurality of light-emitting layers are provided, a charge generating portion may be provided between the first light-emitting layer and the second light-emitting layer. The charge generating portion may have an organic compound having a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge generating portion is provided between the second light-emitting layer and the third light-emitting layer.

[0062] [Protective layer] A protective layer may be provided on the second electrode. For example, by bonding glass provided with a moisture absorbent on the second electrode, it is possible to reduce the intrusion of water and the like into the organic compound layer and reduce the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and the like into the organic compound layer. For example, after forming the cathode, the cathode may be transported to another chamber without breaking the vacuum, and a silicon nitride film having a thickness of 2 μm may be formed by the CVD method to form a protective layer. A protective layer may be provided using an atomic layer deposition method (ALD method) after the film formation by the CVD method. The material of the film formed by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed by the CVD method on the film formed by the ALD method. The film formed by the ALD method may have a smaller thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

[0063] [Color Filter] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using a photolithography technique. The color filter may be made of a polymer.

[0064] [Planarization layer] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing unevenness of the layer below. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but is preferably a high molecular weight.

[0065] The planarization layer may be provided above and below the color filter, and may be made of the same or different materials.Specific examples of the materials include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0066] [Microlens] The organic light-emitting device may have an optical member such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device and to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between the tangent and the hemisphere is the apex of the microlens. The apex of the microlens can be determined in the same manner in any cross-sectional view. That is, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the apex of the microlens.

[0067] It is also possible to define the midpoint of the microlens. In the cross section of the microlens, a line segment is imaginary from a point where an arc shape ends to a point where another arc shape ends, and the midpoint of the line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0068] The microlens has a first surface having a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is disposed closer to the functional layer than the first surface. In order to adopt such a configuration, it is necessary to form a microlens on the light-emitting device. When the functional layer is an organic layer, it is preferable to avoid a process in which the manufacturing process becomes high temperature. In addition, when adopting a configuration in which the second surface is disposed closer to the functional layer than the first surface, it is preferable that the glass transition temperature of all the organic compounds constituting the organic layer is 100°C or higher, and more preferably 130°C or higher.

[0069] [Opposite substrate] A counter substrate may be provided on the planarization layer. The counter substrate is called a counter substrate because it is provided at a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is a first substrate, the counter substrate may be a second substrate.

[0070] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device of this embodiment are formed by the method shown below.

[0071] The organic compound layer constituting the organic light-emitting device according to this embodiment can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Also, instead of the dry process, a wet process can be used in which a layer is formed by dissolving the compound in an appropriate solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0072] Here, when the layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When the layer is formed by a coating method, the layer can be formed by combining with a suitable binder resin.

[0073] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0074] These binder resins may be used alone as homopolymers or copolymers, or in combination of two or more kinds. If necessary, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination.

[0075] [Pixel circuit] The light emitting device may have a pixel circuit connected to the light emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light emitting element and the second light emitting element independently. The active matrix type circuit may be a voltage programming circuit or a current programming circuit. The driving circuit has a pixel circuit for each pixel. The pixel circuit includes a light emitting element, a transistor that controls the emission brightness of the light emitting element, and a transistor that controls the emission timing. The light emitting element may have a capacitance for holding a gate voltage of a transistor for controlling light emission luminance, and a transistor for connecting the light emitting element to GND without going through the light emitting element.

[0076] The light-emitting device has a display region and a peripheral region disposed around the display region. The display region has a pixel circuit, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be smaller than the mobility of a transistor constituting the display control circuit.

[0077] The slope of the current-voltage characteristic of the transistor that constitutes the pixel circuit may be smaller than the slope of the current-voltage characteristic of the transistor that constitutes the display control circuit. The slope of the current-voltage characteristic can be measured by the so-called Vg-Ig characteristic.

[0078] The transistor that constitutes the pixel circuit is a transistor that is connected to a light-emitting element, such as the first light-emitting element.

[0079] [Pixels] An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0080] The pixel emits light in an area called the pixel aperture. This area is the same as the first area. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0081] The distance between the subpixels may be 10 μm or less, and specifically, may be 8 μm, 7.4 μm, or 6.4 μm.

[0082] The pixels may have a known arrangement in plan view. For example, they may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in plan view may be any known shape. For example, they may be a rectangle, a quadrangle such as a diamond, or a hexagon. Of course, if the shape is not an exact figure but is close to a rectangle, it is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0083] [Use of the organic light-emitting device according to the present embodiment] The organic light-emitting device according to the present embodiment can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, a light-emitting device having a white light source and a color filter, etc.

[0084] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on a display unit.

[0085] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used in the display unit of a multifunction printer.

[0086] Next, a display device according to the present embodiment will be described with reference to the drawings.

[0087] 8 is a schematic cross-sectional view showing an example of a display device having an organic light-emitting element and a transistor connected to the organic light-emitting element. The transistor is an example of an active element. The transistor may be a thin film transistor (TFT).

[0088] 8(a) is an example of a pixel that is a component of the display device according to this embodiment. The pixel has a sub-pixel 10. The sub-pixels are divided into 10R, 10G, and 10B according to their light emission. The emitted light color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the sub-pixel may be selectively transmitted or color-converted by a color filter or the like. Each sub-pixel has a reflective electrode 2 that is a first electrode on an interlayer insulating layer 1, an insulating layer 3 that covers the edge of the reflective electrode 2, an organic compound layer 4 that covers the first electrode and the insulating layer, a transparent electrode 5, a protective layer 6, and a color filter 7.

[0089] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 1. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0090] The insulating layer 3 is also called a bank or a pixel separation film. It covers the edge of the first electrode and is disposed so as to surround the first electrode. The part where the insulating layer is not disposed contacts the organic compound layer 4 and becomes a light-emitting region.

[0091] The organic compound layer 4 has a hole injection layer 41 , a hole transport layer 42 , a first light emitting layer 43 , a second light emitting layer 44 , and an electron transport layer 45 .

[0092] The second electrode 5 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0093] The protective layer 6 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as being a single layer, it may be a multi-layer. Each layer may be an inorganic compound layer and an organic compound layer.

[0094] The color filters 7 are divided into 7R, 7G, and 7B according to their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be provided on the color filters. The color filters may be formed on a protective layer 6. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded to each other.

[0095] The display device 100 in FIG. 8(b) includes an organic light-emitting element 26 and a TFT 18 as an example of a transistor. A substrate 11 made of glass, silicon, or the like is provided with an insulating layer 12 on the substrate. An active element 18 such as a TFT is disposed on the insulating layer, and a gate electrode 13, a gate insulating film 14, and a semiconductor layer 15 of the active element are disposed on the insulating layer. The TFT 18 also includes the semiconductor layer 15, a drain electrode 16, and a source electrode 17. An insulating film 19 is disposed on the upper portion of the TFT 18. An anode 21 constituting the organic light-emitting element 26 and the source electrode 17 are connected via a contact hole 20 provided in the insulating film.

[0096] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 26 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Fig. 8(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0097] 8(b), the organic compound layer 22 is illustrated as a single layer, but may be a multi-layer organic compound layer 22. A first protective layer 24 and a second protective layer 25 are provided on the cathode 23 to reduce deterioration of the organic light-emitting element.

[0098] In the display device 100 of FIG. 8(b), transistors are used as switching elements, but other switching elements may be used instead.

[0099] The transistor used in the display device 100 of Fig. 8(b) is not limited to a transistor using a single crystal silicon wafer, but may be a thin film transistor having an active layer on an insulating surface of a substrate. Examples of the active layer include single crystal silicon, amorphous silicon, non-single crystal silicon such as microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin film transistors are also called TFT elements.

[0100] The transistors included in the display device 100 of Fig. 8(b) may be formed in a substrate such as a Si substrate. Here, "formed in a substrate" means that the substrate itself such as a Si substrate is processed to produce the transistors. In other words, having a transistor in a substrate can be seen as the substrate and the transistor being integrally formed.

[0101] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element, and by providing the organic light-emitting element on a plurality of surfaces, an image can be displayed based on the respective light emission brightnesses. The switching element according to this embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a Si substrate. On the substrate may also be within the substrate. Whether to provide a transistor within the substrate or to use a TFT is selected according to the size of the display unit. For example, if the size is about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.

[0102] 9 is a schematic diagram showing an example of a display device according to this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPC1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A transistor is printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position if the display device is a portable device.

[0103] The display device according to this embodiment may have color filters having red, green, and blue colors, the red, green, and blue colors being arranged in a delta arrangement.

[0104] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0105] The display device according to the present embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device, or may be a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0106] 10(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0107] Since the timing suitable for imaging is short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0108] The imaging device 1100 has an optical section (not shown). The optical section has a plurality of lenses, which form an image on an imaging element housed in a housing 1104. The focus of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may be called a photoelectric conversion device. The photoelectric conversion device can include an imaging method that does not capture images sequentially, but detects the difference from the previous image, cuts out an image from an image that is always recorded, and the like.

[0109] FIG. 10(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook computer.

[0110] 11(a) and 11(b) are schematic diagrams showing an example of a display device according to this embodiment. Fig. 11(a) shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device according to this embodiment may be used for the display unit 1302.

[0111] It has a frame 1301 and a base 1303 that supports a display unit 1302. The base 1303 is not limited to the form shown in Fig. 11(a). The lower side of the frame 1301 may also serve as the base.

[0112] The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0113] FIG. 11(b) is a schematic diagram showing another example of the display device according to the present embodiment. The display device 1310 of FIG. 11(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may have the light-emitting device according to the present embodiment. The first display unit 1311 and the second display unit 1312 may be one display unit without a joint. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first and second display units may display one image.

[0114] FIG. 12(a) is a schematic diagram showing an example of a lighting device according to the present embodiment. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source may have an organic light-emitting element according to the present embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse the light of the light source, such as for lighting up, and deliver the light over a wide range. The optical filter and the light diffusion unit may be provided on the light emission side of the lighting. If necessary, a cover may be provided on the outermost part.

[0115] The lighting device is, for example, a device that illuminates a room. The lighting device may emit white light, neutral white light, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit that converts AC voltage into DC voltage. Moreover, white has a color temperature of 4200K, and neutral white has a color temperature of 5000K. The lighting device may have a color filter.

[0116] The lighting device according to the present embodiment may also include a heat dissipation section that dissipates heat from within the device to the outside, and examples of the heat dissipation section include metals with high specific heat, liquid silicon, and the like.

[0117] 12B is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of a lamp. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0118] A tail lamp 1501 may have an organic light-emitting element according to this embodiment. The tail lamp may have a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0119] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, the constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent members.

[0120] The moving body according to the present embodiment has a driving unit such as an engine or a motor, and a means of transportation such as wheels, propellers, or tires. Specifically, the moving body may be an automobile, a ship, an aircraft, a drone, a bicycle, a railroad car, or the like. The moving body may have a body and a lamp provided on the body. The lamp may emit light to indicate the position of the body. The lamp has the organic light-emitting element according to the present embodiment.

[0121] Application examples of the display device of each of the above-mentioned embodiments will be described with reference to Fig. 13(a) and Fig. 13(b). The display device can be applied to a system that can be worn as a wearable device such as smart glasses, HMD, and smart contacts. The image capturing and display device used in such application examples has an image capturing device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.

[0122] 13(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a display device according to each of the above-mentioned embodiments is provided on the back side of the lens 1601.

[0123] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the image capture device 1602.

[0124] FIG. 13(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612. The control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device. An optical system for projecting light emitted by the display device in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 supplies power to the imaging device and the display device. The control device may have a gaze detection unit that detects the gaze of the wearer. Infrared light may be used to detect the gaze. The infrared light emitting unit emits infrared light toward the eyeball of the user gazing at the displayed image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball to obtain an image of the eyeball. The reduction means reduces the light from the infrared light emitting unit to the display unit in a planar view, thereby reducing degradation of image quality.

[0125] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0126] More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0127] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control a display image on the display device based on information about a user's line of sight from the imaging device.

[0128] Specifically, the display device determines a first display area on which the user gazes and a second display area other than the first display area based on the line-of-sight information. The first display area and the second display area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than the first field of view area.

[0129] The display area includes a first display area and a second display area different from the first display area, and an area having a high priority is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the area having a high priority may be controlled to be higher than the resolution of areas other than the area having a high priority. In other words, the resolution of an area having a relatively low priority may be lowered.

[0130] AI may be used to determine the first display area or the area with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using the image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0131] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0132] 14(a) and 14(b) show an image forming apparatus according to one embodiment of the present invention. Fig. 14(a) is a schematic diagram of an image forming apparatus 1700 according to one embodiment of the present invention. The image forming apparatus has a photoconductor, an exposure light source, a developing unit, a charging unit, a transfer unit, a transport roller, and a fixing unit.

[0133] Light 1729 is emitted from an exposure light source 1728, and an electrostatic latent image is formed on the surface of a photoconductor 1727. This exposure light source has an organic light-emitting element according to the present invention. A developing unit 1731 has toner and the like. A charging unit 1730 charges the photoconductor. A transfer unit 1732 records the developed image. The image is transferred onto a recording medium 1734. The transport unit 1733 transports the recording medium 1734. The recording medium 1734 is, for example, paper. The fixing unit 1735 fixes the image formed on the recording medium.

[0134] 14(b) and 14(c) are schematic diagrams showing a state in which a plurality of light-emitting units 1738 are arranged on a long substrate of an exposure light source 1728. 1737 is a direction parallel to the axis of the photoconductor, and represents the row direction in which the organic light-emitting elements are arranged. This row direction is the same as the axis direction about which the photoconductor 1727 rotates. This direction can also be called the long axis direction of the photoconductor.

[0135] Fig. 14(b) shows a configuration in which the light-emitting units are arranged along the long axis direction of the photoconductor. Fig. 14(c) shows a different configuration from (b), in which the light-emitting units are arranged alternately in the column direction in the first column and the second column. The first column and the second column are arranged at different positions in the row direction.

[0136] In the first column, a plurality of light-emitting units are arranged at intervals. In the second column, light-emitting units are arranged at positions corresponding to the intervals between the light-emitting units in the first column. In other words, a plurality of light-emitting units are also arranged at intervals in the row direction.

[0137] The arrangement in FIG. 14(c) can also be described as a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0138] As described above, by using a device using the organic light-emitting element according to this embodiment, it is possible to achieve a display with good image quality and stability even over a long period of time.

[0139] (Other Examples) Although the above describes an embodiment using an organic EL element as a light-emitting element, it is also possible to apply the present invention to a light-emitting device using a light-emitting element other than an organic EL element. Even in a light-emitting device using a light-emitting element other than an organic EL element, the pad electrode is exposed to etching only once when etching the sealing layer, and the amount of wear of the pad electrode can be reduced. This provides high reliability against corrosion of the pad electrode caused by immersion in water for a long time in the dicing process of the mounting process, for example. [Explanation of symbols]

[0140] 100: Display device 110: Pixel array 120: Pad arrangement area 121: Pad electrode 209: Insulating film 214: Sealing layer 218: Pad opening

Claims

1. A light-emitting device having a pixel region in which a plurality of light-emitting elements are arranged, and a peripheral region in which electrode terminals for electrical connection to external terminals and an insulating layer covering the electrode terminals are arranged, the electrode terminal includes a first metal layer exposed by an opening in the insulating layer; an upper surface of the insulating layer is inclined with respect to the first metal layer at an end portion of the opening side; A light emitting device characterized by:

2. Further comprising a sealing layer disposed on the insulating layer.

2. The light emitting device according to claim 1 .

3. the upper surface of the sealing layer has a portion that is inclined with respect to the first metal layer; 3. The light emitting device according to claim 2.

4. an upper surface of the sealing layer is parallel to the first metal layer in a region adjacent to the opening; 4. The light emitting device according to claim 3.

5. The sealing layer has a three-layer structure in which a metal layer is sandwiched between insulating layers.

3. The light emitting device according to claim 2.

6. An end of the insulating layer is spaced from the opening in a plan view.

2. The light emitting device according to claim 1 .

7. a second metal layer disposed on the first metal layer; the insulating layer is disposed on the second metal layer; 3. The light emitting device according to claim 2.

8. In a region adjacent to the opening, the insulating layer is not disposed between the second metal layer and the sealing layer, and the sealing layer is disposed on the second metal layer.

8. The light emitting device according to claim 7.

9. The inclination angle of the insulating layer with respect to the first metal layer is equal to or greater than 20 degrees and equal to or less than 50 degrees.

2. The light emitting device according to claim 1 .

10. the insulating layer includes a first inclined portion having an upper surface inclined with respect to the first metal layer, a parallel portion having an upper surface parallel to the first metal layer, and a second inclined portion having an upper surface inclined with respect to the first metal layer; 3. The light emitting device according to claim 2.

11. The moisture permeability of the insulating layer is greater than the moisture permeability of the sealing layer.

3. The light emitting device according to claim 2.

12. the first metal layer has a recess in the opening portion, and the depth of the recess is 1 nm or more and 100 nm or less.

2. The light emitting device according to claim 1 .

13. The light-emitting element is an organic EL light-emitting element.

2. The light emitting device according to claim 1 .

14. forming a metal portion including a first metal layer and a second metal layer disposed on the first metal layer; forming an insulating layer on the metal portion; isotropically etching the insulating layer using the second metal layer as an etching stop layer to form an opening in the insulating layer; forming an encapsulation layer over the insulating layer and the second metal layer; anisotropically etching the encapsulation layer to remove the second metal layer, and forming a pad opening in the encapsulation layer to expose the first metal layer in the pad opening; A method for manufacturing a light emitting device having the above structure.

Images