Substrate processing apparatus and cleaning method

Abstract

To effectively removing a depot between a substrate and an electrostatic chuck.SOLUTION: A substrate processing apparatus comprises: a chamber; a power supply part; a substrate support part; an electrode; and a control part. The control part executes Step a), Step b), Step c), Step d), and Step e). In Step a), a substrate for cleaning is mounted onto the substrate support part. In Step b), a voltage is applied to the electrode in the substrate support part, and the substrate for cleaning is absorbed and held by the substrate support part. In Step c), a first power of a first magnitude is supplied into a chamber to generate plasma in the chamber, to thereby heat the substrate for cleaning. In Step d), by decreasing the magnitude of the first power from the first magnitude to a second magnitude, the temperature of the substrate for cleaning is decreased. In Step e), the application of the voltage to the electrode is stopped, and the substrate for cleaning is transported out from the top of the substrate support part. Further, both of Step c) and Step d) are alternately repeated a plurality of times.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] Various aspects and embodiments of the present disclosure relate to substrate processing apparatus and cleaning methods. [Background technology]

[0002] The following Patent Document 1 discloses that "in one embodiment, the disclosed cleaning method is a cleaning method that is provided in a processing vessel of a plasma processing apparatus and removes a silicon oxide film from a member having a silicon oxide film formed on its surface by using plasma, the cleaning method including a gas supply step of supplying a processing gas into the processing vessel, a plasma generation step of generating a plasma of the processing gas supplied into the processing vessel, and a bias power application step of applying a bias power that attracts ions in the plasma to the member, wherein the ratio of the value of the bias power to the pressure in the processing vessel is 1 W / mTorr or less." [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-145540 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate processing apparatus and a cleaning method capable of efficiently removing deposits between a substrate and an electrostatic chuck. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus including a chamber, a power supply unit, a substrate support unit, an electrode, and a control unit. The power supply supplies power into the chamber. The substrate support unit is provided in the chamber and supports a substrate. The electrode is provided in the substrate support unit and causes the substrate to be attracted and held by the substrate support unit by electrostatic force. The control unit executes steps a), b), c), d), and e). In step a), a substrate for cleaning is placed on the substrate support unit. In step b), a voltage applied to the electrode is controlled to attract and hold the substrate for cleaning on the substrate support unit. In step c), the power supply unit is controlled to supply a first power of a first magnitude into the chamber, and plasma is generated in the chamber, thereby heating the substrate for cleaning. In step d), the power supply unit is controlled to reduce the magnitude of the first power from the first magnitude to a second magnitude, thereby reducing the temperature of the substrate for cleaning. In step e), the application of the voltage to the electrodes is stopped, and the substrate to be cleaned is carried out from the substrate support unit. Also, steps c) and d) are alternately repeated multiple times. Effect of the Invention

[0006] According to various aspects and embodiments of the present disclosure, deposits between a substrate and an electrostatic chuck can be efficiently removed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of a plasma processing system according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing an example of the structure of an electrostatic chuck. [Diagram 3] FIG. 3 is a conceptual diagram showing an example of a process in which charges remain on an electrostatic chuck. [Figure 4] FIG. 4 is a conceptual diagram showing an example of a process in which electric charge remains on an electrostatic chuck. [Diagram 5] FIG. 5 is a flowchart showing an example of a cleaning method. [Figure 6]FIG. 6 is a conceptual diagram showing an example of a process in which the deposit is removed. [Figure 7] FIG. 7 is a conceptual diagram showing an example of a process in which the deposit is removed. [Figure 8] FIG. 8 is a conceptual diagram showing an example of a process in which the deposit is removed. [Figure 9] FIG. 9 is a flowchart showing another example of the cleaning method. [Figure 10] FIG. 10 is a flowchart showing another example of the cleaning method. [Figure 11] FIG. 11 is a flowchart showing another example of the cleaning method. [Figure 12] FIG. 12 is a schematic cross-sectional view showing another example of the structure of the electrostatic chuck. [Figure 13] FIG. 13 is a flow chart showing an example of the relationship between substrate processing and cleaning. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of a substrate processing apparatus and a cleaning method will be described in detail with reference to the drawings. Note that the substrate processing apparatus and cleaning method disclosed below are not limited to the embodiments.

[0009] When a substrate is processed in a chamber of a substrate processing apparatus, reaction by-products (hereinafter referred to as deposits) are deposited on the surfaces of components in the chamber. Such deposits may also get between the substrate and the electrostatic chuck that supports the substrate. The electrostatic chuck attracts the substrate by electrostatic force, and if the deposits are conductive, the charge of the substrate is transferred to the electrostatic chuck via the deposits.

[0010] When the substrate processing is completed and the substrate is removed, the voltage application to the electrode of the electrostatic chuck is released, and the generation of the electrostatic force from the electrostatic chuck is stopped. Then, the substrate is lifted from the upper surface of the electrostatic chuck by the lift pins. However, if the charge of the substrate is transferred to the electrostatic chuck via the conductive deposit, the charge may remain on the electrostatic chuck and the electrostatic force may remain even if the voltage application to the electrode of the electrostatic chuck is released. When the substrate processing is repeated, the charge remaining on the electrostatic chuck may accumulate, and a strong electrostatic force may remain between the substrate and the electrostatic chuck even if the voltage application to the electrode of the electrostatic chuck is released. If a strong electrostatic force remains between the substrate and the electrostatic chuck, the substrate may jump up or be damaged when the substrate is lifted by the lift pins.

[0011] Therefore, the present disclosure provides a technique that can efficiently remove deposits between a substrate and an electrostatic chuck.

[0012] An example of the configuration of a plasma processing system will be described below. Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0013] [Example of plasma processing system configuration] FIG. 1 is a diagram illustrating an example of a plasma processing system according to an embodiment of the present disclosure. The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 is an example of a substrate processing apparatus, and the power supply 30 is an example of a power supply unit. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In an embodiment, the shower head 13 constitutes at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to a radio frequency (RF) power source 31 and / or a direct current (DC) power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas such as helium gas to a gap between the back surface of the substrate W and the central region 111a. Although omitted in FIG. 1, the substrate support 11 is provided with a plurality of lift pins.

[0018] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0020] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, a bias potential is generated on the substrate W by supplying a bias RF signal to the at least one lower electrode, and ion components in the formed plasma can be attracted to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. The source RF signal (source RF power) is an example of the second power. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The bias RF signal (bias RF power) is an example of a first power. Note that, depending on the conditions, even if the source RF signal generated by the first RF generating unit 31a is not supplied, plasma can be generated in the plasma processing chamber 10 by the bias RF signal generated by the second RF generating unit 31b. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0027] 2 is a schematic cross-sectional view showing an example of the structure of the electrostatic chuck 1111. A recess 1111c and a plurality of protrusions 1111d are formed on the upper surface of the electrostatic chuck 1111. A protrusion 1111e is formed on the upper surface of the electrostatic chuck 1111 along the periphery of the upper surface of the electrostatic chuck 1111.

[0028] A DC power supply 50 is connected to an electrostatic electrode 1111b provided in the electrostatic chuck 1111 via a wiring 51. The magnitude of the DC voltage applied from the DC power supply 50 to the electrostatic electrode 1111b via the wiring 51 is controlled by the control unit 2.

[0029] Further, a flow path 54 having an opening at the bottom of the recess 1111c of the electrostatic chuck 1111 is formed in the electrostatic chuck 1111. A heat transfer gas such as helium gas supplied from a heat transfer gas supply unit 53 flows in the flow path 54. The heat transfer gas supplied from the heat transfer gas supply unit 53 is supplied into the recess 1111c through the flow path 54. The pressure of the heat transfer gas supplied from the heat transfer gas supply unit 53 is controlled by the control unit 2. In the example of FIG. 2, one flow path 54 is formed in the electrostatic chuck 1111, but a plurality of flow paths 54 may be formed in the electrostatic chuck 1111.

[0030] Further, in the electrostatic chuck 1111, a through hole 58 having an opening at the bottom of the recess 1111c of the electrostatic chuck 1111 is formed. The through hole 58 is formed to penetrate the electrostatic chuck 1111 and the base 1110. A lift pin 57 is disposed in the through hole 58. The lift pin 57 is raised and lowered by a lifting mechanism 56, and can raise and lower the substrate W placed on the electrostatic chuck 1111. In the example of FIG. 2, for convenience of explanation, the electrostatic chuck 1111 is provided with one lifting mechanism 56, one lift pin 57, and one through hole 58. However, in an actual device, the electrostatic chuck 1111 is provided with a plurality of lifting mechanisms 56, one lift pin 57, and one through hole 58 (for example, three). Note that a plurality of lift pins 57 may be raised and lowered by one lifting mechanism 56.

[0031] Here, when the substrate W is processed in the plasma processing chamber 10, deposits may also get between the substrate W and the electrostatic chuck 1111. If the deposits are conductive, the charge on the substrate W moves to the electrostatic chuck 1111 via the deposits 60 between the substrate W and the electrostatic chuck 1111, as shown in FIG.

[0032] Furthermore, when the processing of the substrate W is completed and the substrate is removed, the application of the voltage to the electrostatic electrode 1111b of the electrostatic chuck 1111 is released. However, if the charge of the substrate W is transferred to the electrostatic chuck 1111 via the conductive deposit 60, the charge may remain on the electrostatic chuck 1111 even if the application of the voltage to the electrostatic electrode 1111b of the electrostatic chuck 1111 is released, as shown in FIG. 4 for example. This may cause an electrostatic force to remain between the electrostatic chuck 1111 and the substrate W. When the processing of the substrate W is repeated, the charge is accumulated on the electrostatic chuck 1111, and a strong electrostatic force may remain between the electrostatic chuck 1111 and the substrate W even if the application of the voltage to the electrostatic electrode 1111b of the electrostatic chuck 1111 is released. If a strong electrostatic force remains between the substrate W and the electrostatic chuck 1111, the substrate W may jump up or be damaged when the substrate W is lifted by the lift pins 57. Therefore, in this embodiment, the deposits 60 between the substrate W and the electrostatic chuck 1111 are efficiently removed, thereby preventing the substrate W from being broken or damaged.

[0033] [Cleaning method] Fig. 5 is a flow chart showing an example of a cleaning method. Each step illustrated in Fig. 5 is realized by the control unit 2 controlling each part of the plasma processing chamber 10. It is assumed that several substrates W are processed by the plasma processing chamber 10 and a deposit 60 is accumulated on the electrostatic chuck 1111 before the cleaning method illustrated in Fig. 5 is performed.

[0034] First, a substrate W' to be cleaned is placed on the electrostatic chuck 1111 (step S100). Step S100 is an example of process a). In step S100, a gate valve (not shown) provided on a side wall 10a of the plasma processing chamber 10 is opened, and the substrate W is loaded into the plasma processing chamber 10 by a transfer robot (not shown). The substrate W is then transferred from the transfer robot to the lift pins 57 protruding from the upper surface of the electrostatic chuck 1111. The lift pins 57 are then lowered by driving the lifting mechanism 56, so that the substrate W is placed on the upper surface of the electrostatic chuck 1111.

[0035] The cleaning substrate W' used in this embodiment is, for example, a silicon substrate. In addition, it is preferable that a silicon oxide film, a silicon nitride film, or an organic film is disposed on the cleaning substrate W' at a portion in contact with the protruding portion 1111d of the electrostatic chuck 1111. In particular, it is preferable that a silicon oxide film is disposed on the cleaning substrate W' at a portion in contact with the protruding portion 1111d of the electrostatic chuck 1111. This allows the deposit 60 deposited on the protruding portion 1111d of the electrostatic chuck 1111 to be adsorbed to the cleaning substrate W' and efficiently removed.

[0036] Next, the cleaning substrate W' is attracted to the electrostatic chuck 1111 by electrostatic force (step S101). Step S101 is an example of process b). In step S101, a voltage is applied to the electrostatic electrode 1111b in the electrostatic chuck 1111 to generate an electrostatic force between the cleaning substrate W' and the electrostatic chuck 1111, and the cleaning substrate W' is attracted to the upper surface of the electrostatic chuck 1111. As a result, as shown in FIG. 6, for example, the deposit 60 deposited on the convex portion 1111d and the protrusion 1111e of the electrostatic chuck 1111 and the rear surface of the cleaning substrate W' are brought into close contact with each other, and the deposit 60 is attracted to the rear surface of the cleaning substrate W'.

[0037] Next, a cleaning gas is supplied into the plasma processing chamber 10 (step S102). In step S102, the cleaning gas supplied from the gas supply unit 20 is supplied into the plasma processing chamber 10 via the shower head 13. The cleaning gas supplied into the plasma processing chamber 10 in step S102 is, for example, a mixed gas of a fluorine-containing gas, a rare gas, and an oxygen-containing gas. An example of the fluorine-containing gas is C4F6 gas. An example of the rare gas is argon gas. An example of the oxygen-containing gas is oxygen gas.

[0038] The exhaust system 40 is controlled to adjust the pressure inside the plasma processing chamber 10 to a predetermined pressure (e.g., 25 mT (approximately 3.3 Pa)). The temperature of the heat transfer medium flowing through the flow passage 1110a of the base 1110 is adjusted to adjust the temperature of the electrostatic chuck 1111 to a predetermined temperature (e.g., 30° C.).

[0039] Next, a first magnitude of RF power is supplied from the power source 30 into the plasma processing chamber 10, thereby generating plasma in the plasma processing chamber 10 (step S103). Step S103 is an example of process c). In step S103, a bias RF signal generated by the second RF generating unit 31b is supplied to the plasma processing chamber 10 via the lower electrode of the base 1110, thereby converting the cleaning gas in the plasma processing chamber 10 into plasma. In addition to the bias RF signal, a source RF signal may be supplied to at least one lower electrode and / or at least one upper electrode. When the frequency of the bias RF signal is, for example, 400 kHz or less, it is preferable to apply the source RF signal.

[0040] Next, in a state where plasma is generated in the plasma processing chamber 10, the process waits for a predetermined first time (step S104). In step S104, the process waits for, for example, 200 seconds.

[0041] In step S104, the substrate W' for cleaning is heated by heat input from the plasma, and the substrate W' for cleaning expands due to heat, for example, as shown in Fig. 7. As a result, the deposit 60 adsorbed to the rear surface of the substrate W' for cleaning moves with the expansion of the substrate W' for cleaning. As a result, the deposit 60 is peeled off from the protrusions 1111d and the ridges 1111e of the electrostatic chuck 1111.

[0042] In step S103, the bias RF signal generated by the second RF generator 31b is supplied to the plasma processing chamber 10, but the disclosed technology is not limited thereto. From the viewpoint of heating the substrate W' for cleaning, it is preferable that the generated plasma has a larger energy. Therefore, in step S103, the source RF signal generated by the first RF generator 31a may be further supplied to the plasma processing chamber 10 via at least one of the lower electrode of the base 1110 and the upper electrode of the shower head 13. The frequency of the source RF signal generated by the first RF generator 31a is higher than the frequency of the bias RF signal generated by the second RF generator 31b.

[0043] Next, the magnitude of the RF power supplied into the plasma processing chamber 10 is reduced from the first magnitude to a second magnitude smaller than the first magnitude (step S105). Step S105 is an example of process d). In step S105, the power of the bias RF signal generated by the second RF generator 31b is reduced. This reduces the heat input from the plasma to the substrate W' for cleaning.

[0044] Next, the process waits for a second predetermined time while the power supplied to the plasma is reduced (step S106). In step S106, the process waits for, for example, 30 seconds. Since the heat input from the plasma is reduced, the temperature of the cleaning substrate W' is reduced by heat exchange between the cleaning substrate W' and the base 1110 via the electrostatic chuck 1111. The temperature of the cleaning substrate W' is reduced, and the cleaning substrate W' is thermally contracted, for example, as shown in FIG. 8. As a result, the deposit 60 adsorbed to the rear surface of the cleaning substrate W' moves with the contraction of the cleaning substrate W'. As a result, the deposit 60 moves while being pressed against the rear surface of the cleaning substrate W' by the convex portion 1111d and the protrusion 1111e of the electrostatic chuck 1111. As a result, the deposits 60 are pressed against the rear surface of the substrate W' to be cleaned by the convex portions 1111d and the ridges 1111e of the electrostatic chuck 1111, and the deposits 60 are more strongly attracted to the rear surface of the substrate W' to be cleaned.

[0045] Furthermore, the deposits 60 remaining on the protrusions 1111d and the ridges 1111e of the electrostatic chuck 1111 are scraped off by the deposits 60 moving together with the substrate W' for cleaning. As a result, the deposits 60 remaining on the protrusions 1111d and the ridges 1111e of the electrostatic chuck 1111 are also removed from the protrusions 1111d and the ridges 1111e of the electrostatic chuck 1111.

[0046] In step S105, the supply of RF power into the plasma processing chamber 10 may be stopped by lowering the magnitude of the RF power supplied into the plasma processing chamber 10 to 0 W. That is, the second magnitude in step S105 may be 0 W. This allows the temperature of the cleaning substrate W' to be quickly lowered.

[0047] Furthermore, the voltage applied to the electrostatic electrode 1111b in the electrostatic chuck 1111 when adsorbing the cleaning substrate W' in step S101 is preferably greater than the voltage applied to the electrostatic electrode 1111b when processing the product substrate W. This allows the deposit 60 to be pressed more strongly against the rear surface of the cleaning substrate W' by the convex portion 1111d and the ridges 1111e of the electrostatic chuck 1111, and the deposit 60 can be more strongly adsorbed to the rear surface of the cleaning substrate W'.

[0048] Next, it is determined whether the processes shown in steps S103 to S106 have been repeated a predetermined number of times (step S107). The predetermined number of times in step S107 is, for example, three times. If the processes shown in steps S103 to S106 have not been repeated the predetermined number of times (step S107: No), the process shown in step S103 is executed again.

[0049] On the other hand, if the processes shown in steps S103 to S106 have been repeated the predetermined number of times (step S107: Yes), the supply of the cleaning gas into the plasma processing chamber 10 is stopped (step S108).

[0050] Next, the adsorption of the cleaning substrate W' is released (step S109). Then, the cleaning substrate W' is carried out from the plasma processing chamber 10 (step S110). Steps S109 and S110 are an example of process e). In step S110, the lift pins 57 lift the cleaning substrate W' by driving the lifting mechanism 56, and the cleaning substrate W' is carried out from the plasma processing chamber 10 by a transfer robot (not shown). The deposit 60 is adsorbed to the back surface of the cleaning substrate W' carried out from the plasma processing chamber 10 in step S110. Then, the cleaning method shown in this flowchart is completed.

[0051] The embodiment has been described above. As described above, the substrate processing apparatus (plasma processing apparatus 1) in this embodiment includes a chamber (10), a power supply unit (power supply 30), a substrate support unit (substrate support unit 11), an electrode (electrostatic electrode 1111b), and a control unit (control unit 2). The power supply is configured to supply power into the chamber. The substrate support unit is provided in the chamber and configured to support a substrate (substrate W or substrate W' for cleaning). The electrode is provided in the substrate support unit and configured to adsorb and hold the substrate on the substrate support unit by electrostatic force. The control unit is configured to execute steps a), b), c), d), and e). In step a), a substrate for cleaning is placed on the substrate support unit. In step b), the voltage applied to the electrode is controlled to adsorb and hold the substrate for cleaning on the substrate support unit. In step c), the power supply unit is controlled to supply a first power (bias power) of a first magnitude into the chamber, and plasma is generated in the chamber, thereby heating the substrate for cleaning. In step d), the power supply unit is controlled to reduce the magnitude of the first power from the first magnitude to a second magnitude, thereby lowering the temperature of the substrate for cleaning. In step e), the application of the voltage to the electrode is stopped, and the substrate for cleaning is carried out from the substrate support unit. In addition, steps c) and d) are alternately repeated multiple times. This allows the deposit 60 between the substrate W and the electrostatic chuck 1111 to be efficiently removed.

[0052] In the above-described embodiment, the second magnitude may be 0 W. This makes it possible to quickly lower the temperature of the cleaning substrate W'.

[0053] In addition, the control unit in the above embodiment may be configured to further supply a second power (source power) having a higher frequency than the first power into the chamber in step c) by controlling the power supply unit. This allows the cleaning substrate W' to be heated more quickly in step c). Also, the plasma can be generated more stably in the plasma processing chamber 10 in step c).

[0054] Moreover, the control unit in the above embodiment is configured to control the voltage applied to the electrodes in step b) so that the voltage is greater than the voltage applied to the electrodes when processing the product substrate W. This allows the deposit 60 to be pressed more strongly against the rear surface of the cleaning substrate W' by the convex portion 1111d and the ridges 1111e of the electrostatic chuck 1111, and the deposit 60 can be more strongly attracted to the rear surface of the cleaning substrate W'.

[0055] In the above-described embodiment, the cleaning substrate is preferably a silicon substrate. It is more preferable that a silicon oxide film is disposed on at least the surface of the cleaning substrate that contacts the substrate support. This allows the deposits 60 accumulated on the electrostatic chuck 1111 to be efficiently adsorbed to the cleaning substrate W' and removed.

[0056] The above-mentioned embodiment is a cleaning method in a substrate processing apparatus, in which a control unit executes steps a), b), c), d), and e). In step a), a substrate for cleaning is placed on a substrate support unit. In step b), a voltage applied to an electrode is controlled to attract and hold the substrate for cleaning on the substrate support unit. In step c), a power supply unit is controlled to supply a first power (bias power) of a first magnitude into the chamber, and plasma is generated in the chamber, thereby heating the substrate for cleaning. In step d), a power supply unit is controlled to reduce the magnitude of the first power from the first magnitude to a second magnitude, thereby reducing the temperature of the substrate for cleaning. In step e), the application of the voltage to the electrode is stopped, and the substrate for cleaning is carried out from the substrate support unit. In addition, steps c) and d) are alternately repeated multiple times. This allows the deposit 60 between the substrate W and the electrostatic chuck 1111 to be efficiently removed.

[0057] [others] It should be noted that the technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0058] For example, in the above-described embodiment, the pressure of the heat transfer gas supplied between the substrate W' to be cleaned and the electrostatic chuck 1111 is substantially constant during the execution of the cleaning method, but the disclosed technology is not limited to this. For example, as another embodiment, the pressure of the heat transfer gas supplied between the substrate W' to be cleaned and the electrostatic chuck 1111 may be changed during the execution of the cleaning method, as illustrated in FIG.

[0059] Fig. 9 is a flow chart showing another example of the cleaning method. In Fig. 9, except for the points described below, the processes denoted by the same reference numerals as those in Fig. 5 are the same as those described with reference to Fig. 5, and therefore the description thereof will be omitted.

[0060] After the process shown in step S102 is performed, the pressure of the heat transfer gas supplied between the substrate W' to be cleaned and the electrostatic chuck 1111 is adjusted to a first pressure (step S120). The adjustment of the pressure of the heat transfer gas supplied between the substrate W' to be cleaned and the electrostatic chuck 1111 is achieved by the control unit 2 controlling the heat transfer gas supply unit 53. Then, the process shown in step S103 is executed.

[0061] After the process shown in step S104 is performed, the pressure of the heat transfer gas supplied between the substrate W' for cleaning and the electrostatic chuck 1111 is adjusted to a second pressure higher than the first pressure (step S121). This promotes heat exchange between the substrate W' for cleaning and the electrostatic chuck 1111, and allows the temperature of the substrate W' for cleaning to be reduced more quickly. Then, the process shown in step S105 is performed.

[0062] In step S120, the supply of heat transfer gas between the substrate W' for cleaning and the electrostatic chuck 1111 may be stopped. This suppresses heat exchange between the substrate W' for cleaning and the electrostatic chuck 1111, and allows the temperature of the substrate W' for cleaning to be increased more quickly.

[0063] In the above embodiment, the cleaning method is performed using one cleaning substrate W', but the disclosed technology is not limited to this. For example, as another embodiment, cleaning may be performed while replacing the cleaning substrate W' as shown in FIG. This makes it possible to more efficiently remove the deposits 60 on the electrostatic chuck 1111.

[0064] Fig. 10 is a flow chart showing another example of the cleaning method. Note that, except for the points described below, in Fig. 10, the processes denoted by the same reference numerals as in Fig. 5 are the same as the processes described with reference to Fig. 5, and therefore the description thereof will be omitted.

[0065] After the substrate W' for cleaning is unloaded in step S110, it is determined whether the processes from steps S101 to S110 have been repeated a predetermined number of times (step S130). The predetermined number of times in step S130 is, for example, five times. If the processes from steps S101 to S110 have been repeated a predetermined number of times (step S130: Yes), the cleaning method shown in this flowchart ends.

[0066] On the other hand, if the processes from steps S101 to S110 have not been repeated the predetermined number of times (step S130: No), another substrate W' for cleaning is placed on the electrostatic chuck 1111 (step S131), and the process shown in step S101 is executed again. The another substrate W' for cleaning is a substrate W' for cleaning to which no deposit 60 is attached.

[0067] Furthermore, in the above-described embodiment, after the substrate W' for cleaning is unloaded in step S110, cleaning of the inside of the plasma processing chamber 10 may be performed in a state in which the substrate W' for cleaning is not present on the electrostatic chuck 1111. This makes it possible to remove particles of the deposit 60 that are generated by rubbing between the deposit 60 adsorbed on the back surface of the substrate W' for cleaning and the convex portion 1111d and the ridge 1111e of the electrostatic chuck 1111 and that fall into the concave portion 1111c of the electrostatic chuck 1111.

[0068] Fig. 11 is a flow chart showing another example of the cleaning method. In Fig. 11, except for the points described below, the processes denoted by the same reference numerals as those in Fig. 5 are the same as those described with reference to Fig. 5, and therefore the description thereof will be omitted.

[0069] After the substrate W' to be cleaned is unloaded in step S110, a cleaning gas is supplied again into the plasma processing chamber 10 (step S140). The cleaning gas supplied into the plasma processing chamber 10 in step S140 may be the same as the cleaning gas supplied into the plasma processing chamber 10 in step S102, or may be a different gas. The gas supply unit 20 is an example of a cleaning gas supply unit.

[0070] Next, after the pressure in the plasma processing chamber 10 is adjusted, RF power is supplied from the power supply 30 into the plasma processing chamber 10, thereby generating plasma in the plasma processing chamber 10 (step S141). Steps S140 and S141 are an example of process f). The generated plasma removes particles of the deposit 60 that have fallen into the recess 1111c of the electrostatic chuck 1111. In step S141, at least one of source RF power and bias RF power is supplied into the plasma processing chamber 10 as RF power.

[0071] After cleaning of the upper surface of the electrostatic chuck 1111 is completed, the supply of RF power into the plasma processing chamber 10 is stopped (step S142), and the supply of cleaning gas into the plasma processing chamber 10 is stopped (step S143). Then, the cleaning method shown in this flowchart is completed.

[0072] 11, after the deposits 60 are removed from the protrusions 1111d and the ridges 1111e of the electrostatic chuck 1111, cleaning using plasma is performed in a state where no substrate W' to be cleaned is present on the electrostatic chuck 1111. Therefore, the cleaning time can be shortened compared to when cleaning using plasma is performed in a state where the deposits 60 are attached to the protrusions 1111d and the ridges 1111e of the electrostatic chuck 1111. This makes it possible to suppress wear of the electrostatic chuck 1111 caused by cleaning using plasma.

[0073] Alternatively, a large flow rate of purge gas may be supplied into the plasma processing chamber 10 via the shower head 13, and the purge gas may be sprayed onto the upper surface of the electrostatic chuck 1111 to purge particles of the deposit 60 that have fallen onto the upper surface of the electrostatic chuck 1111. This can further reduce wear on the electrostatic chuck 1111. The purge gas is supplied into the plasma processing chamber 10, for example, from the gas supply unit 20 via the shower head 13. The gas supply unit 20 is an example of a purge gas supply unit. As the purge gas, for example, an inert gas such as nitrogen gas or a rare gas can be used. The process of purging particles on the upper surface of the electrostatic chuck 1111 using the purge gas is an example of process f).

[0074] Also, for example, while supplying the purge gas, the application and cessation of the voltage to the electrostatic electrode 1111b may be repeated. This allows an electrostatic force to act on the surface of the electrostatic chuck 1111, making it easier to remove particles. The supply and cessation of the supply of the purge gas may be repeated multiple times. When the supply and cessation of the supply of the purge gas is repeated multiple times, the application and cessation of the voltage to the electrostatic electrode 1111b may be repeated while the purge gas is being supplied.

[0075] The cleaning method in the above-described embodiment may be performed when the load applied to the lift pins 57 when lifting the processed substrate W exceeds a predetermined threshold due to charges remaining on the electrostatic chuck 1111. In this case, the lift pins 57 are provided with sensors 59 for measuring the load applied to the lift pins 57 when lifting the substrate W, as shown in FIG.

[0076] A specific relationship between the processing of the substrate W and the cleaning is, for example, as shown in Fig. 13. Fig. 13 is a flow chart showing an example of the relationship between the processing of the substrate W and the cleaning.

[0077] First, the substrate W is processed in the plasma processing chamber 10 (step S200). In step S200, the lift pins 57 lift the processed substrate W by driving the lifting mechanism 56, and the processed substrate W is carried out from the plasma processing chamber 10 by a transfer robot (not shown). At this time, the load applied to the lift pins 57 when lifting the substrate W is measured by the sensor 59, and the measurement result is output to the control unit 2.

[0078] Next, it is determined whether the load applied to the lift pins 57 when lifting the substrate W is equal to or greater than a first threshold value (step S201). The first threshold value used in step S201 is a load applied to the lift pins 57 when lifting the substrate W that is smaller than the load at which the substrate W bounces or is damaged due to the lift pins 57 rising. If the load applied to the lift pins 57 is less than the first threshold value (step S201: No), it is determined whether or not the processing of the substrate W is to be terminated (step S204). If the processing of the substrate W is not to be terminated (step S204: No), the processing shown in step S200 is executed again. On the other hand, if the processing of the substrate W is to be terminated (step S204: Yes), the processing shown in this flowchart is terminated.

[0079] On the other hand, if the load on the lift pins 57 is equal to or greater than the first threshold (step S201: Yes), the cleaning method illustrated in Fig. 5, 9, 10, or 11 is executed (step S202). In step S202, the lift pins 57 lift the cleaning substrate W' by driving the lifting mechanism 56, and the cleaning substrate W' is carried out from the plasma processing chamber 10 by a transfer robot (not shown). At this time, the load on the lift pins 57 when lifting the cleaning substrate W' is measured by the sensor 59, and the measurement result is output to the control unit 2.

[0080] Next, it is determined whether or not the load applied to the lift pins 57 when lifting the substrate W' for cleaning is less than a second threshold value (step S203). The second threshold value used in step S203 is preferably a value smaller than the first threshold value used in step S201. If the load applied to the lift pins 57 is equal to or greater than the second threshold value (step S203: No), the process shown in step S202 is executed again. On the other hand, if the load applied to the lift pins 57 is less than the second threshold value (step S203: Yes), the process shown in step S204 is executed.

[0081] Furthermore, the cleaning methods illustrated in FIGS. 5, 9, 10, 11, and 13 may be carried out in appropriate combination.

[0082] In the above embodiment, the capacitively coupled plasma has been described as an example of the plasma source, but the plasma source in the disclosed technology is not limited to this. Examples of plasma sources other than the capacitively coupled plasma include inductively coupled plasma (ICP), microwave excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave excited plasma (HWP).

[0083] It should be noted that the embodiments disclosed herein are illustrative in all respects and should not be construed as limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0084] Furthermore, the following supplementary notes are disclosed regarding the above embodiment.

[0085] (Appendix 1) A chamber; a power supply configured to provide power within the chamber; a substrate support disposed within the chamber and configured to support a substrate; an electrode provided within the substrate support portion and configured to attract and hold the substrate on the substrate support portion by electrostatic force; Control unit and Equipped with The control unit is a) placing a substrate for cleaning on the substrate support; b) controlling a voltage applied to the electrode to attract and hold the cleaning substrate on the substrate support; c) controlling the power supply to supply a first power of a first magnitude into the chamber to generate a plasma in the chamber, thereby heating the cleaning substrate; d) decreasing the temperature of the cleaning substrate by controlling the power supply to decrease the first power magnitude from the first magnitude to a second magnitude; e) stopping the application of voltage to the electrodes and removing the substrate to be cleaned from the substrate support. configured to run The steps c) and d) are repeated alternately a number of times in the substrate processing apparatus. (Appendix 2) 2. The substrate processing apparatus according to claim 1, wherein the second magnitude is 0 W. (Appendix 3) The control unit is 3. The substrate processing apparatus according to claim 1, wherein in the step c), a second power having a frequency higher than that of the first power is further supplied into the chamber by controlling the power supply unit. (Appendix 4) a gas supply configured to supply a heat transfer gas between the cleaning substrate and the substrate support; The control unit is In the step c), a pressure of the heat transfer gas supplied between the substrate to be cleaned and the substrate support is controlled to a first pressure by controlling the gas supply unit; 4. The substrate processing apparatus according to claim 1, wherein in the step d), a pressure of the heat transfer gas supplied between the substrate to be cleaned and the substrate support is controlled to a second pressure higher than the first pressure by controlling the gas supply unit. (Appendix 5) a gas supply configured to supply a heat transfer gas between the cleaning substrate and the substrate support; The control unit is In the step c), the gas supply unit is controlled to stop the supply of the heat transfer gas between the substrate to be cleaned and the substrate support unit; 4. The substrate processing apparatus according to claim 1, wherein in the step d), the gas supply unit is controlled to supply the heat transfer gas between the substrate to be cleaned and the substrate support unit. (Appendix 6) The control unit is 6. The substrate processing apparatus according to claim 1, wherein the voltage applied to the electrode in the step b) is controlled so as to be greater than the voltage applied to the electrode when processing a product substrate. (Appendix 7) 7. The substrate processing apparatus according to claim 1, wherein the substrate to be cleaned is a silicon substrate. (Appendix 8) 8. The substrate processing apparatus according to claim 1, wherein a silicon oxide film is disposed on at least a surface of the substrate for cleaning that is in contact with the substrate support part. (Appendix 9) 9. The substrate processing apparatus according to claim 1, wherein the cleaning substrate is replaced each time the steps a) to e) are performed one or more times. (Appendix 10) a cleaning gas supply configured to supply a cleaning gas into the chamber; The control unit is f) after step e), controlling the cleaning gas supply unit to supply the cleaning gas into the chamber, controlling the power supply unit to supply power into the chamber, and generating plasma in the chamber, thereby cleaning a surface of the substrate support. (Appendix 11) a purge gas supply configured to supply a purge gas into the chamber; The control unit is f) after step e), the substrate processing apparatus is configured to further perform a step of controlling the purge gas supply unit to supply the purge gas into the chamber and purge a surface of the substrate support unit. (Appendix 12) a purge gas supply configured to supply a purge gas into the chamber; The control unit is f) after step e), the substrate processing apparatus is configured to further perform a step of purging a surface of the substrate support by repeatedly supplying and stopping the supply of the purge gas into the chamber by controlling the purge gas supply unit. (Appendix 13) 13. The substrate processing apparatus according to claim 11, wherein in the step f), the control unit repeatedly applies and stops the voltage to the electrode while the purge gas is being supplied into the chamber. (Appendix 14) a plurality of lift pins configured to extend through the substrate support and lift a substrate mounted on the substrate support; a measurement unit for measuring a load applied to the lift pin when the lift pin lifts the substrate; Further equipped with The control unit is 14. The substrate processing apparatus according to any one of claims 1 to 13, wherein the load applied to the lift pins when lifting the product substrate is obtained from a measurement unit each time processing of the product substrate is completed, and steps a) to e) are performed when the load applied to the lift pins when lifting the product substrate is equal to or greater than a predetermined first threshold. (Appendix 15) a plurality of lift pins that extend through the substrate support and lift a substrate placed on the substrate support; a measurement unit for measuring a load applied to the lift pin when the lift pin lifts the substrate; Further equipped with The control unit is 15. The substrate processing apparatus according to claim 1, wherein in step e), a load applied to the lift pins when lifting the substrate for cleaning is obtained from a measurement unit, and when the load applied to the lift pins when lifting the substrate for cleaning is equal to or greater than a predetermined second threshold, steps a) to e) are executed again. (Appendix 16) A chamber; a power supply for supplying power into the chamber; a substrate support provided in the chamber and configured to support a substrate; an electrode provided within the substrate support portion for attracting and holding the substrate to the substrate support portion by electrostatic force; Control unit and A cleaning method for a substrate processing apparatus comprising: The control unit: a) placing a substrate for cleaning on the substrate support; b) controlling a voltage applied to the electrode to attract and hold the cleaning substrate on the substrate support; c) controlling the power supply to supply a first power of a first magnitude into the chamber to generate a plasma in the chamber, thereby heating the cleaning substrate; d) decreasing the temperature of the cleaning substrate by controlling the power supply to decrease the first power magnitude from the first magnitude to a second magnitude; e) stopping the application of voltage to the electrodes and removing the substrate to be cleaned from the substrate support. Run The cleaning method in which the steps c) and d) are alternately repeated multiple times. [Explanation of symbols]

[0086] W substrate W' substrate 1. Plasma processing equipment 2. Control section 2a Computer 2a1 Processing section 2a2 Storage section 2a3 Communication Interface 10 Plasma Processing Chamber 10a side wall 10e Gas exhaust port 10s Plasma treatment space 11 Substrate support 111 Main body 111a Central area 111b Annular region 1110 Foundation 1110a Flow path 1111 Electrostatic Chuck 1111a Ceramic components 1111b Electrostatic electrode 1111c Recess 1111d Convex 1111e Projection 112 Ring Assembly 13. Shower Head 13a Gas supply port 13b Gas diffusion chamber 13c Gas inlet 20 Gas supply section 21 Gas Source 22 Flow Controller 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a First DC generation unit 32b Second DC generation section 40 Exhaust system 50 DC power supply 51 Wiring 53 Heat transfer gas supply section 54 Flow Path 56 Lifting mechanism 57 Lift Pin 58 Through hole 59 Sensors 60 Depot

Claims

1. A chamber; a power supply configured to provide power within the chamber; a substrate support disposed within the chamber and configured to support a substrate; an electrode provided within the substrate support portion and configured to attract and hold the substrate on the substrate support portion by electrostatic force; Control unit and Equipped with The control unit is a) placing a substrate for cleaning on the substrate support; b) controlling a voltage applied to the electrode to attract and hold the cleaning substrate on the substrate support; c) controlling the power supply to supply a first power of a first magnitude into the chamber to generate a plasma in the chamber thereby heating the cleaning substrate; d) decreasing the temperature of the cleaning substrate by controlling the power supply to decrease the first power magnitude from the first magnitude to a second magnitude; e) stopping the application of voltage to the electrodes and removing the substrate to be cleaned from the substrate support; configured to run The steps c) and d) are alternately repeated a plurality of times in the substrate processing apparatus.

2. The substrate processing apparatus of claim 1 , wherein the second magnitude is 0 W.

3. The control unit is 3 . The substrate processing apparatus according to claim 1 , further comprising: a power supply unit configured to control the power supply unit in step c) so as to further supply a second power having a frequency higher than that of the first power into the chamber.

4. a gas supply configured to supply a heat transfer gas between the cleaning substrate and the substrate support; The control unit is In the step c), a pressure of the heat transfer gas supplied between the substrate to be cleaned and the substrate support is controlled to a first pressure by controlling the gas supply unit; 2. The substrate processing apparatus according to claim 1, wherein in the step d), the pressure of the heat transfer gas supplied between the substrate to be cleaned and the substrate support is controlled to a second pressure higher than the first pressure by controlling the gas supply unit.

5. a gas supply configured to supply a heat transfer gas between the cleaning substrate and the substrate support; The control unit is In the step c), the gas supply unit is controlled to stop the supply of the heat transfer gas between the substrate to be cleaned and the substrate support unit; The substrate processing apparatus of claim 1 , further comprising: a gas supply unit configured to supply the heat transfer gas between the substrate to be cleaned and the substrate support unit in step d).

6. The control unit is The substrate processing apparatus according to claim 1 , wherein in the step b), the voltage applied to the electrode is controlled so as to be greater than the voltage applied to the electrode when the product substrate is processed.

7. 2. The substrate processing apparatus according to claim 1, wherein the substrate to be cleaned is a silicon substrate.

8. The substrate processing apparatus according to claim 1 , wherein a silicon oxide film is disposed on at least a surface of the substrate for cleaning that is in contact with the substrate support part.

9. The substrate processing apparatus according to claim 1 , wherein the cleaning substrate is replaced each time the steps a) to e) are performed one or more times.

10. a cleaning gas supply configured to supply a cleaning gas into the chamber; The control unit is 2. The substrate processing apparatus of claim 1 , further configured to perform, after step e), the step of: f) controlling the cleaning gas supply unit to supply the cleaning gas into the chamber, controlling the power supply unit to supply power into the chamber, and generating plasma in the chamber, thereby cleaning the surface of the substrate support.

11. a purge gas supply configured to supply a purge gas into the chamber; The control unit is 2 . The substrate processing apparatus of claim 1 , further comprising: f) performing, after step e), the step of controlling the purge gas supply unit to supply the purge gas into the chamber and purge a surface of the substrate support unit.

12. a purge gas supply configured to supply a purge gas into the chamber; The control unit is 2. The substrate processing apparatus of claim 1, further comprising: f) performing, after step e), a step of purging a surface of the substrate support by repeatedly supplying and stopping the supply of the purge gas into the chamber by controlling the purge gas supply unit.

13. 13. The substrate processing apparatus according to claim 11, wherein in the step f), the control unit repeatedly applies and stops the voltage to the electrode while the purge gas is being supplied into the chamber.

14. a plurality of lift pins configured to extend through the substrate support and lift a substrate mounted on the substrate support; a measurement unit for measuring a load applied to the lift pin when the lift pin lifts the substrate; Further equipped with The control unit is 2. The substrate processing apparatus according to claim 1, wherein each time processing of a product substrate is completed, the load applied to the lift pins when lifting the product substrate is obtained from a measurement unit, and when the load applied to the lift pins when lifting the product substrate is equal to or greater than a predetermined first threshold, steps a) to e) are performed.

15. a plurality of lift pins that extend through the substrate support and lift a substrate placed on the substrate support; a measurement unit for measuring a load applied to the lift pin when the lift pin lifts the substrate; Further equipped with The control unit is 2. The substrate processing apparatus of claim 1, wherein in step e), a load applied to the lift pins when lifting the substrate for cleaning is obtained from a measurement unit, and when the load applied to the lift pins when lifting the substrate for cleaning is equal to or greater than a predetermined second threshold, steps a) to e) are executed again.

16. A chamber; a power supply for supplying power into the chamber; a substrate support provided in the chamber and configured to support a substrate; an electrode provided within the substrate support portion for attracting and holding the substrate to the substrate support portion by electrostatic force; Control unit and A cleaning method for a substrate processing apparatus comprising: The control unit: a) placing a substrate for cleaning on the substrate support; b) controlling a voltage applied to the electrode to attract and hold the cleaning substrate on the substrate support; c) controlling the power supply to supply a first power of a first magnitude into the chamber to generate a plasma in the chamber thereby heating the cleaning substrate; d) decreasing the temperature of the cleaning substrate by controlling the power supply to decrease the first power magnitude from the first magnitude to a second magnitude; e) stopping the application of voltage to the electrodes and removing the substrate to be cleaned from the substrate support; Run The cleaning method includes repeating steps c) and d) alternately multiple times.

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