Manufacturing method for display device

Abstract

To provide a display device or an electronic appliance with high reliability.SOLUTION: A display device includes a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and a protection film on the second electrode. The protection film includes a first insulating film and a second insulating film on the first insulating film. The first insulating film includes one or more of aluminum oxide, hafnium oxide, and zirconium oxide. The second insulating film includes one or more of aluminum oxide, hafnium oxide, and zirconium oxide. The first insulating film and the second insulating film have different compositions. The protection film has a water vapor permeability of less than 1×10-2 g / (m2 day).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device. Or, one embodiment of the present invention relates to a manufacturing method of a display device. Regarding the law.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. For example, one embodiment of the present invention is The present invention relates to a process, machine, manual, or method of manufacture. or relating to a fact or composition of matter. One aspect of the present invention relates to a storage device, a processor, a driving method thereof, or a manufacturing method thereof. .

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Therefore, semiconductor elements such as transistors and diodes and semiconductor circuits are semiconductors. The present invention is also applicable to display devices, light-emitting devices, lighting devices, electro-optical devices, electronic devices, etc. The display device, the light-emitting device, the lighting device, etc. may include a semiconductor element or a semiconductor circuit. Devices such as semiconductor devices include optical devices, electro-optical devices, and electronic equipment. [Background technology]

[0004] In recent years, research and development of liquid crystal elements as display elements for use in the display area of ​​display devices has been actively carried out. In addition, electroluminescence Research and development of light-emitting devices using electroluminescence (EL) is also being actively carried out. The light-emitting element has a layer containing a light-emitting substance sandwiched between a pair of electrodes. By adding the photoresist, light emission from the luminescent substance can be obtained.

[0005] In particular, since the above-mentioned light-emitting element is a self-luminous type, a display device using this element has excellent visibility. It has the advantage of not requiring a backlight and consuming little power. It also has the advantage of being easy to manufacture and having a high response speed.

[0006] In addition, a display device having the above-mentioned display element can be flexible. The adoption of a substrate having such a structure is being considered.

[0007] A method for manufacturing a display device using a flexible substrate includes a glass substrate or a quartz substrate. After a semiconductor element such as a thin film transistor is formed on the substrate, the semiconductor element and the substrate are Fill the gap between the plates with organic resin and transfer the glass or quartz substrate to another substrate (e.g., a flexible substrate) A technology has been developed for transferring a semiconductor element onto a semiconductor substrate (Patent Document 1).

[0008] The light-emitting element formed on the flexible substrate is required to protect the surface of the light-emitting element and to protect it from moisture from the outside. In order to prevent the intrusion of foreign matter or impurities, a flexible substrate may be further provided on the light emitting element. .

[0009] Display devices are also expected to be used for a variety of purposes, and diversification is required. For example, the development of smartphones and tablet terminals equipped with touch sensors as mobile information terminals. Development is underway. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0011] In particular, light-emitting elements that are mainly made of organic compounds are easily deteriorated by water. As a result, the brightness of the display device may be partially reduced. In some cases, non-luminescent areas may occur.

[0012] An object of one embodiment of the present invention is to provide a highly reliable display device or electronic device. Another embodiment of the present invention is to provide a display device or electronic device that is not easily damaged. Another object of one embodiment of the present invention is to provide a thin or lightweight display device. Another object of the present invention is to provide an electronic device. Another object of the present invention is to provide a display device or electronic device having a low resistance. An object of one embodiment is to provide a novel display device or electronic device.

[0013] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. Other issues can be extracted from the drawings, claims, etc. [Means for solving the problem]

[0014] One aspect of the present invention is a method for manufacturing a semiconductor device comprising: a first electrode; a second electrode; and a second electrode between the first electrode and the second electrode. The display device has a light-emitting layer and a protective film on the second electrode. The protective film is a first insulating film. and a second insulating film on the first insulating film, the first insulating film being made of aluminum oxide, The first insulating film is made of at least one of aluminum oxide and zirconium oxide. a first insulating film and a second insulating film, the first insulating film having one or more of a fluorine-containing oxide, a hafnium oxide, and a zirconium oxide; The composition of the insulating film is different, and the protective film has a water vapor permeability of 1×10 -2 g / (m 2 ·day)Not yet It is full.

[0015] Another embodiment of the present invention is a semiconductor device including a first electrode, a third insulating film overlapping an end portion of the first electrode, and a light-emitting layer on the first electrode and the third insulating film; a second electrode on the light-emitting layer; The display device has a protective film. The protective film includes a first insulating film and a second insulating film on the first insulating film. The first insulating film is made of aluminum oxide, hafnium oxide, and zinc oxide. the second insulating film comprises one or more of aluminum oxide, hafnium oxide, and and zirconium oxide, and the first insulating film overlaps with the first electrode via the light emitting layer. a first region overlapping the third insulating film through the light emitting layer, and a second region overlapping the third insulating film through the light emitting layer, has a region having a lower film density than the first region.

[0016] In addition, one embodiment of the present invention is a first electrode, a second electrode, and a A light-emitting element having a light-emitting layer between the aluminum oxide and the light-emitting layer is formed by sputtering. A first insulating film having one or more of tungsten oxide, hafnium oxide, and zirconium oxide is used as a light emitting device. The ALD method was used to form aluminum oxide, hafnium oxide, and zirconium oxide on the A method for manufacturing a display device, comprising forming a second insulating film having one or more of be.

[0017] The second insulating film may have a higher carbon content than the first insulating film.

[0018] Furthermore, a part of the second insulating film may fill in a part of the first insulating film.

[0019] In addition, a colored film may be provided in contact with the second insulating film.

[0020] Further, one embodiment of the present invention may include a first display element and a second display element. The display element includes a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. and the second display element may be a liquid crystal element. Effect of the Invention

[0021] According to one embodiment of the present invention, a highly reliable display device or electronic device can be provided. According to one embodiment of the present invention, a display device, an electronic device, or the like that is not easily damaged can be provided. Alternatively, according to one embodiment of the present invention, a thin or lightweight display device or According to one embodiment of the present invention, a device that consumes less power can be provided. It is possible to provide a display device, an electronic device, or the like that can be easily used in the present invention. As a result, it is possible to provide a novel display device, electronic device, or the like.

[0022] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these are described in the specification. The above will become apparent from the description, drawings, claims, etc. From the above description, it is possible to extract other effects. [Brief description of the drawings]

[0023] [Figure 1]1A to 1C are diagrams illustrating a display device according to an embodiment. [Diagram 2] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Diagram 3] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Figure 4] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Diagram 5] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Figure 6] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Figure 7] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Figure 8] 1A to 1C are diagrams illustrating a display device according to an embodiment. [Figure 9] FIG. 2 is a diagram for explaining a pixel unit. [Figure 10] FIG. 2 is a diagram for explaining a pixel unit. [Figure 11] 1A and 1B are a diagram illustrating a circuit of a display device and a top view of a pixel. [Figure 12] FIG. 2 illustrates a circuit of a display device. [Figure 13] 1A and 1B are a diagram illustrating a circuit of a display device and a top view of a pixel. [Figure 14] FIG. 1 illustrates a structure of a display device. [Figure 15] FIG. 1 illustrates a structure of a display device. [Figure 16] FIG. 1 illustrates a structure of a display device. [Figure 17] 3 shows a configuration example of a display module according to the embodiment. [Figure 18] 1 is an electronic device according to an embodiment. [Figure 19] 1 is an electronic device according to an embodiment. [Figure 20] 1 is an electronic device according to an embodiment. [Figure 21] 4A to 4C are diagrams illustrating the transmittance, reflectance, and absorptance of a sample. [Figure 22] Diagram explaining STEM images. [Diagram 23] 1A to 1C are diagrams illustrating a manufacturing process of a sample. [Figure 24]FIG. 2 is a diagram illustrating an optical microscope photograph of a sample. [Diagram 25] FIG. 13 is a diagram illustrating the emission characteristics of a sample. [Figure 26] FIG. 13 is a diagram illustrating the emission characteristics of a sample. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0026] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0027] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0028] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0029] In this specification, the term "metal oxide" refers to a metal in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). ), oxide semiconductor (also called oxide semiconductor or simply OS) For example, when a metal oxide is used for the semiconductor film of a transistor, the Metal oxides are sometimes called oxide semiconductors. When the metal oxide has at least one of the functions of a metal oxide film and a switching function, the metal oxide film is Metal oxide semiconductor, abbreviated as OS In addition, when describing OS FET, it is possible to use a metal oxide or an oxide In other words, it can be called a transistor having a semiconductor.

[0030] In the present specification and the like, metal oxides having nitrogen are also referred to as metal oxides. Metal oxides containing nitrogen are also called metal oxynitrides (MEs). It may also be called tal oxynitride.

[0031] In the present specification, CAAC (c-axis aligned crystal l), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents a function or a material configuration. Shows an example.

[0032] In the present specification and the like, CAC-OS or CAC-metal oxide means A part of the material has a conductive function and a part of the material has an insulating function, and the whole material has It functions as a semiconductor. When de is used in the semiconductor film of a transistor, the conductive function is to transfer the electrons ( The function of insulation is to allow the flow of electrons (carriers) and not allow the flow of electrons (electrons). By making the conductive function and the insulating function work in a complementary manner, The function to switch the settings (On / Off function) on CAC-OS or CAC-meta It can be added to CAC-OS or CAC-metal oxide. In the IDE, by separating the functions of each, we maximize the functionality of both. can be done.

[0033] In the present specification and the like, CAC-OS or CAC-metal oxide is The conductive region has the above-mentioned conductive function and the insulating function. The conductive region has the insulating function described above. The regions may be separated at the nanoparticle level. The conductive regions may be unevenly distributed in the material. They may be observed connected in a dot-like pattern.

[0034] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and The insulating regions are each 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material at sizes of less than one millimeter.

[0035] In addition, CAC-OS or CAC-metal oxide has different band gaps For example, CAC-OS or CAC-metal ox The ide consists of a wide gap component due to the insulating region and a conductive region. In this configuration, when the carrier flows, In addition, carriers mainly flow in the narrow gap component. The component with a gap acts complementary to the component with a wide gap to produce a narrow gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. CAC-OS or CAC-metal oxide is used for the channel region of a transistor. When the transistor is in the on-state, the current drive capability is high, i.e., the on-current is large, and Therefore, a high field effect mobility can be obtained.

[0036] That is, CAC-OS or CAC-metal oxide is a matrix composite. matrix composite, or metal matrix composite It can also be called a composite matrix.

[0037] (Embodiment 1) In this embodiment mode, a mode of a display device will be described with reference to FIGS.

[0038] FIG. 1A is a schematic cross-sectional view of a display device according to the present embodiment. The light-emitting element 20 has a first electrode 10 and an EL layer 1 The light-emitting element 22 has a first electrode 12, an EL layer 16, and A second electrode 18 is formed. In addition, an insulating film 14 is formed to cover the ends of the first electrodes 10 and 12. A protective film 28 is provided on the light emitting element 20. The protective film 28 and the substrate 42 are bonded to each other by an adhesive 44. The substrates 40 and 42, the adhesive 44, the first electrodes 10 and 12, and the EL layer 16 are fixed together. The details of the second electrode 18 and the insulating film 14 will be described in another embodiment.

[0039] Next, the vicinity of the light emitting elements 20 and 22 will be described with reference to the enlarged cross-sectional view of FIG. The light-emitting element 20 has a first electrode 10, an EL layer 16 including a light-emitting layer, and a second electrode 18. The light-emitting element 22 has a first electrode 12, an EL layer 16, and a second electrode 18. The first electrode 10 and the first electrode 12 are separated. An insulating film 14 is formed to cover the end of the electrode 12. That is, the first electrode 12 is formed in the opening of the insulating film 14. A portion of the surface of each of the first electrode 10 and the first electrode 12 is exposed. A protective film 28 including an insulating film 24 and an insulating film 26 on the insulating film 24 is formed on the insulating film 22. do.

[0040] The insulating film 24 and the insulating film 26 are made of aluminum oxide, gallium oxide, and germanium oxide, respectively. tungsten oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide Oxides such as tungsten and tantalum oxides can be formed in single or multilayers. The insulating film 24 and the insulating film 26 are made of a nitride such as silicon nitride or aluminum nitride. It can be formed using an object.

[0041] The insulating films 24 and 26 are formed using the same oxide or nitride. Alternatively, the insulating film 24 and the insulating film 26 may be formed using different oxides or nitrides. For example, the insulating film 24 and the insulating film 26 may be formed using aluminum oxide. Alternatively, the insulating film 24 and the insulating film 26 may each be made of zirconium oxide. Alternatively, the insulating film 24 and the insulating film 26 can be formed using oxidized aluminum. Alternatively, the insulating film 24 and the insulating film 25 may be formed of aluminum and silicon nitride. The coating 26 may be formed using zirconium oxide and silicon nitride, respectively. .

[0042] The thickness of the insulating film 24 is 50 nm or more and 1000 nm or less, preferably 100 nm or more and 30 The thickness of the insulating film 26 can be set to 1 nm or more and 100 nm or less. , and preferably from 5 nm to 50 nm.

[0043] In addition, as shown in FIG. 1C, an insulating film 28_1 formed on the second electrode 18 is The film 24_1 and the insulating film 26_1 on the insulating film 24_1 are thin and therefore can be used as a through-hole. Since the throughput is improved, the productivity of the display device can be increased.

[0044] The insulating films 24 and 24_1 are formed by using a sputtering method. _1 is Atomic Layer Deposition method (ALD method) It is formed using:

[0045] In the ALD method, the pressure in the deposition chamber is set to atmospheric pressure or reduced pressure, and a source gas for the reaction (e.g., oxidizing agent) is introduced. The deposition process is carried out by sequentially introducing the raw gases (agent and precursor) into the deposition chamber and repeating the introduction of the raw gas. The first source gas is adsorbed on the surface to be formed to form a first layer, and the second source gas is introduced into the film forming chamber. By introducing the first layer and the second source gas into the chamber, the first layer reacts with the second source gas, and the second layer is stacked on the first layer. The film is formed by repeatedly introducing the source gases while controlling the order of introduction of the source gases until the desired thickness is reached. By repeating this process, a thin film with excellent step coverage can be formed.

[0046] In addition, the ALD method uses thermal reaction as a means for activating part or all of the source gas. Thermal ALD (thermal ALD) is a process that uses plasma reactions. nced ALD method or PAALD (Plasma-Assisted ALD) method Compared with thermal ALD, the PEALD method allows for lower film formation temperatures. It is possible to form a film at room temperature. It also has the effect of accelerating the film formation speed and making the film dense. It has the effect of making things easier for people.

[0047] By stacking insulating films using different film formation methods, the diffusion of impurities such as water, oxygen, etc. It is possible to form a protective film capable of reducing diffusion. The ALD method allows film formation at low temperatures. The EL layer included in the light-emitting element has low heat resistance. Therefore, the insulating films 24, 24_1 and the insulating films 26, 26_1 functioning as protective films are relatively It is preferable to form the film at a relatively low temperature, typically 100° C. or less, by sputtering and A The LD method is suitable.

[0048] When the insulating films 24, 24_1 and the insulating films 26, 26_1 are aluminum oxide films, The film density of the insulating films 24, 24_1 and the insulating films 26, 26_1 is 2.5 g / cm 3 3 or more .95g / cm 3The film density is preferably less than 100 nm. It can be measured using X-Ray Reflectometry (R).

[0049] The insulating films 24 and 24_1 have a smaller amount of impurities such as carbon than the insulating films 26 and 26_1. In other words, the insulating films 26 and 26_1 are not as carbon-free as the insulating films 24 and 24_1. The amount of impurities is large. The amount of impurities is determined by X-ray photoelectron spectroscopy (XPS). This can be done using Photoelectron Spectroscopy. .

[0050] If the film formation temperature in the ALD method is low, some of the precursors do not react and remain as impurities. On the other hand, the sputtering method forms a film by physically depositing a part of the target. This makes it difficult for impurities to become mixed into the film.

[0051] From the above, the insulating films 24 and 24_1 are formed by the sputtering method, and the ALD method is By forming the insulating films 26 and 26_1 using , the amount of impurities is smaller than that of 26_1.

[0052] The water vapor permeability of the protective films 28 and 28_1 is 1×10 -2 g / (m 2 ·day) less than, good Preferably 5 x 10 -3 g / (m 2 ·day) or less, preferably 1×10 -4 g / ( m 2 ·day) or less, more preferably 1×10 -5 g / (m 2 ·day) and further Preferably 1 x 10 -6 g / (m 2·day) or less. If the water vapor transmission rate is low, As a result, the protective films 28 and 28_1 function as moisture-proof films. The diffusion of water can be reduced.

[0053] In FIG. 1B, the protective film 28 has a laminated structure of the insulating film 24 and the insulating film 26. However, a plurality of pairs of the insulating film 24 and the insulating film 26 may be laminated. The insulating film 26, the insulating film 24, and the insulating film 26 may be laminated in this order.

[0054] Here, the effects of the protective film 28 according to one embodiment of the present invention and the method for producing the same will be described. FIG. 2A is an enlarged cross-sectional view of an insulating film 24 formed by using a sputtering method. The insulating film 24 formed by the sputtering method is formed by sputtering a sputtering gas onto a sputtering target. The components of the sputtering target are deposited on the surface to be formed by sputtering. The deposited films have low impurity levels.

[0055] However, in the sputtering method, the components of the sputtering target are physically shaped. Since the insulating film 24 is deposited on the surface on which it is formed, the deposited film is easily affected by the shape of the surface on which it is formed. The second electrode 18 has a region 18a that overlaps with the insulating film 14 and a region 18b that does not overlap with the insulating film 14. The surface of the region 18a overlapping the insulating film 14 is inclined with respect to the substrate. On the other hand, the surface of the region 18b that does not overlap with the insulating film 14 is parallel to the substrate. Therefore, in the insulating film 24, a low-density region 24a is formed in the region formed on the region 18a. On the other hand, in the insulating film 24, a region 24b formed on the region 18b is low-density. Area 24a is hardly included.

[0056] In the low density region 24a, water, oxygen, etc. are easily diffused. For this reason, the sputtering method Even if the protective film is formed of a single layer of the insulating film 24 formed using It is difficult to prevent the diffusion of elements such as

[0057] When the insulating film 26 is formed on the insulating film 24 by the ALD method, as shown in FIG. It is possible to reduce the ratio of the low density region 24a in the insulating film 24. This is because AL Method D is a monoatomic layer deposition method and has high coverage, so it is suitable for insulating films formed by sputtering. This is believed to be because the insulating film 26 is deposited while filling the gaps in the low-density regions 24a of the film 24. Even if the insulating film 24 includes a low-density region 24a, the low-density region 24a By forming the insulating film 26 so as to cover the 4a, the insulating film 26 serves as a protection film against the diffusion of impurities. This function can prevent the diffusion of water, oxygen, etc. from the outside into the light emitting element.

[0058] For these reasons, we first formed an insulating film on the light-emitting element by sputtering, and then performed ALD. By forming an insulating film using this method, a protective film with reduced diffusion of water, oxygen, etc. can be formed. In addition, by forming the protective film on the light emitting element, water, It is possible to prevent the diffusion of oxygen and the like, and to reduce the deterioration of the light-emitting element. In addition, a display device having a highly reliable light-emitting element can be manufactured.

[0059] (Embodiment 2) In this embodiment, another mode of a display device will be described with reference to FIG. 3 is a schematic cross-sectional view of the display device shown in the present embodiment. 8 and the adhesive 44.

[0060] The vicinity of the light emitting elements 20 and 22 will be described with reference to the enlarged cross-sectional view of FIG. The colored films 30 and 32 are provided on the protective film 28. The colored film 30 is connected to the light emitting element 2 via the protective film 28. 0. The colored film 32 overlaps with the light emitting element 22 via the protective film 28.

[0061] The colored films 30 and 32 will be described in detail in a later embodiment.

[0062] The colored films 30 and 32 are formed by applying a composition onto the protective film 28, exposing and developing the composition, and then heating the composition. Alternatively, the colored film 30 may be formed by a photolithography process. 32 is formed by discharging the composition by an ink-jet method and then performing a heat treatment. This can be done.

[0063] Since the colored films 30 and 32 are formed using a composition, if the composition contains water or the like, If the water diffuses into the light emitting element, the light emitting element will deteriorate.

[0064] However, the protective film 28 can reduce the diffusion of water, oxygen, etc. from the outside. Therefore, even if a colored film is formed directly on the protective film 28, water contained in the material may penetrate into the light emitting element. Therefore, the deterioration of the light emitting element can be reduced.

[0065] In a display device, the thickness of the display device is reduced by forming a colored film on a light-emitting element. In particular, in a high-resolution display device with a resolution of 1000 ppi or more, it is possible to color the opposing substrate. When providing a film or the like, it is necessary to align the light emitting element with the colored film. The more there are, the more difficult it becomes to align the light-emitting element and the colored film, which leads to a decrease in yield. On the other hand, by forming a colored film on the light-emitting element, alignment between the light-emitting element and the colored film is not required. Therefore, it is possible to increase the yield.

[0066] In addition, in a high-definition display device, if the distance between the light-emitting element and the colored film is large, the adjacent pixels may be blurred. This causes light leakage into the colored film provided on the substrate, adversely affecting the viewing angle characteristics. Therefore, in order to improve the viewing angle characteristics, it is preferable to reduce the distance between the light emitting element and the colored film. In the display device shown in this embodiment, a colored film can be formed over a light-emitting element through a protective film. Therefore, it is possible to reduce the distance between the light-emitting element and the colored film, and the viewing angle characteristics can be improved. This can be done.

[0067] (Embodiment 3) In this embodiment, an example of a display device according to one embodiment of the present invention will be described.

[0068] A more specific configuration example of the display device according to one embodiment of the present invention will be described below with reference to the drawings. He explains.

[0069] <Display device> FIG. 4 is a perspective view of the display device 710. As shown in FIG.

[0070] The display device 710 includes a substrate 751a and a substrate 752a. The outline of the structure is shown by a dashed line.

[0071] The display device 710 includes a display section 761a, a circuit section 762a, and a substrate 751a and a substrate 752a. 2a, wiring 765a, etc. Also, IC 764a and FPC 763a are provided on the substrate 751a. Therefore, the display device 710 is called a display module. It is also possible.

[0072] The circuit portion 762a can be, for example, a circuit that functions as a scan line driver circuit.

[0073] The wiring 765a supplies signals and power to the display portion 761a and the circuit portion 762a. The relevant signals and power are input from the outside via FPC763a or Input from C764a.

[0074] In FIG. 4, the substrate 751a is formed by a COG (Chip On Glass) method or the like. The IC 764a is, for example, a scanning line driving circuit. An IC that functions as a signal line driver circuit, etc. can be applied. If not necessary, "a" may not be provided. Also, IC764a is a COF (Chip On It may be mounted on FPC763a using the (film) method or the like.

[0075] 4 shows an enlarged view of a part of the display unit 761a. The conductive films 121 of the display element are arranged in a matrix.

[0076] FIG. 5A is a schematic cross-sectional view of a display portion of a display device 710. In FIG.

[0077] The display device 710 includes a transistor 741a and a transistor 742a between a substrate 751a and a substrate 752a. The transistor 741b, the display element 721R, the display element 721G, and the display element 721B (not shown) The substrate 751a and the substrate 752a are bonded to each other by an adhesive layer 151a. The transistor 741a, the transistor 741b, the display element 721R, and the like are disposed behind the insulating film 7 It is provided on page 31.

[0078] The display device 710 includes a display element 721R, a display element 721G, and a display element 721B. (not shown) have light emitting elements that emit different colors, and the substrate 752a side (display surface The light is emitted toward the front (side).

[0079] FIG. 5B illustrates the transistors 741a and 741b in FIG. The display element 721R and its vicinity are shown in an enlarged view. Note that the display elements 721B and the like are shown in Since a configuration similar to that of the display element 721R shown in FIG. The following description can be used:

[0080] The transistor 741a and the transistor 741b are provided over the insulating film 731. The transistor 741a is connected to the transistor 741b and serves as the selection transistor of the pixel. The transistor 741b is connected to the display element 721R and functions as a It functions as a drive transistor for controlling the current flowing through the transistor 721R.

[0081] The transistor 741a includes a conductive film 111 serving as a gate and a gate insulating film The insulating film 132 functions as a semiconductor film 112a, and the semiconductor film 112b functions as either a source or a drain. a conductive film 113a serving as a gate electrode and a conductive film 113b serving as the other of the source and the drain, The transistor 741a shown in FIG. 5B and the like has a bottom-gate channel edge. It is a transistor with a gate structure.

[0082] In addition, an insulating film 133 is provided to cover the transistor 741a. , which functions as a protective film for protecting the transistor 741a.

[0083] The transistor 741b is provided over the conductive film 113b with the semiconductor film 112 interposed therebetween. The semiconductor film 112b includes a conductive film 113c and a conductive film 113d which are in contact with the semiconductor film 112b. Part of the conductive film 113b functions as the gate of the transistor 741b. A part of the conductive film 113c functions as a gate insulating film of the transistor 741b. The film 113d functions as the source or drain of the transistor 741b.

[0084] In this way, the transistor 741b is provided above the transistor 741a. In addition, the conductive film 113b is connected to the other of the source and the drain of the transistor 741a. This also serves as the gate of the transistor 741b. 1a and transistor 741b are arranged side by side on the same surface. The area occupied by these components can be reduced.

[0085] In addition, the conductive film 113d, a part of the insulating film 133, and a part of the conductive film 113b are laminated. The capacitor element 130 functions as a storage capacitor for the pixel. do.

[0086] An insulating film 136 and an insulating film 134 are provided to cover the transistor 741b. The insulating film 136 functions as a protective film for protecting the transistor 741b. It is preferable that either the insulating film 136 or the insulating film 134 functions as a planarization film. Either one of them may not be provided if not necessary.

[0087] A conductive film 121 is provided on the insulating film 134. The conductive film 121 is The insulating film 136 is electrically connected to the conductive film 113 d through an opening formed in the insulating film 136 . In addition, an insulating film 135 is provided to cover the end portion of the conductive film 121 and the opening. An EL layer 122R and a conductive film 123 are stacked on the film 135 and the conductive film 121. A protective film 125 is provided on the conductive film 123. The use of the protective film shown in FIG. 1 suppresses the progression of deterioration of the display elements 721R, 721G, and 721B. It is possible.

[0088] The conductive film 121 functions as a pixel electrode of the display element 721R. The EL layer 122R functions as an electrode. The EL layer 122R includes at least a light-emitting layer.

[0089] The display element 721R is a top-emission type (top-emitter) that emits light to the side opposite to the surface on which it is formed. The conductive film 121 is a conductive film that reflects visible light. The film 123 can be a conductive film that transmits visible light.

[0090] Figure 5 (A) and (B) show an example in which EL layers are created separately for display elements that exhibit different colors. The EL layer of each display element has a light-emitting layer that exhibits a different color. .

[0091] The EL layer 122R of the display element 721R has, for example, a red light-emitting layer. By creating separate EL layers for display elements that exhibit different colors, It is possible to improve the color purity of the light emitted by the child. In addition, the light extraction efficiency can be improved compared to when a plurality of light emitting layers are used. The driving voltage can be lowered as compared to the case where a light emitting element that emits white light is applied by stacking.

[0092] Here, since it can be used for the display element 721R, the display element 721G, the display element 721B, etc. The structure of the light-emitting element will be described.

[0093] FIG. 6(A) shows a case where all layers constituting an EL layer are formed between display elements exhibiting different colors. 13 shows an example of the case where the two are separated.

[0094] The display element 721R has an EL layer 122R between a conductive film 121 and a conductive film 123. In FIG. 6A, the EL layer 122R is formed by stacking the carrier injection layer 141R from the conductive film 121 side. , a carrier transport layer 142R, a light emitting layer 143R, a carrier transport layer 144R, and a carrier injection layer It has an inner layer 145R.

[0095] For example, when the conductive film 121 is an anode and the conductive film 123 is a cathode, the carrier injection layer 1 A material having high hole injection properties is used for the carrier transport layer 41R, and a material having high hole transport properties is used for the carrier transport layer 142R. A material having high electron transport properties is used for the carrier transport layer 144R, and a material having high electron transport properties is used for the carrier injection layer 145 A material with high electron injection properties is used for R. When the anode and cathode are interchanged, can be replaced.

[0096] Similarly, the EL layer 122B of the display element 721B includes a carrier injection layer 141B and a carrier transport layer 141B. A carrier transport layer 144B, a carrier injection layer 145B, and a light emitting layer 143B. The EL layer 122G of the display element 721G includes a carrier injection layer 141G, a carrier The rear transport layer 142G, the light emitting layer 143G, the carrier transport layer 144G, and the carrier injection layer 1 It has 45G.

[0097] In this manner, the EL layer 122R, the EL layer 122B, and the EL layer 122G are each independently By forming the elements in a single layer, it is possible to optimize the device structure. The L layer 122R, the EL layer 122B, and the EL layer 122G are each made of a different material. This can improve color purity, luminous efficiency, light extraction efficiency, etc. It can be extremely high.

[0098] In this example, the thicknesses of the layers in each EL layer are shown to be approximately the same. The thickness of each layer may be different for each display element.

[0099] FIG. 6B shows a case where only the light-emitting layers are made differently between the display elements, and the other layers are used in common. The following shows an example of the case.

[0100] A carrier injection layer 141, a carrier transport layer 142, a carrier transport layer 144, and a carrier injection layer 145 are provided.

[0101] With such a structure, the manufacturing process can be simplified.

[0102] The carrier injection layer 141, the carrier transport layer 142, the carrier transport layer 144, and the One or more of the carrier injection layers 145 may be separately formed.

[0103] In addition, a display element in which a phosphorescent material is applied to the light-emitting layer and a display element in which a fluorescent material is applied to the light-emitting layer are also disclosed. When display elements that have been modified are mixed, layers that are not used in common are created separately, and other layers are used in common. It is preferable to use it throughout.

[0104] FIG. 6C shows an example in which EL layers of the same configuration are used between display elements exhibiting different colors. Specifically, the EL layer 122W that emits white light and the colored film of each display element are combined. 13 shows an example of a configuration in which different colors are emitted by combining different light sources.

[0105] The display element 721R, the display element 721B, and the display element 721G each include a colored film 15 2R, colored film 152B, or colored film 152G.

[0106] The EL layer 1 of each of the display element 721R, the display element 721B, and the display element 721G The EL layer 22W is provided between different display elements. In addition, the formation process can be simplified compared to when the EL layer is used between display elements that exhibit different colors. Compared to the case where separate layers are made, the design, such as the minimum processing dimensions and alignment accuracy, when forming the EL layer is Since there is no need to consider the in-rule, the distance between adjacent pixels can be made smaller, resulting in higher resolution. It can be done.

[0107] In addition, by using a semi-transmissive and semi-reflective conductive film for the conductive film 123, In this case, the conductive film 121 and the conductive film 1 23, an optical adjustment layer that transmits visible light is provided to adjust the optical distance between the It is preferable that the optical adjustment layer has a different thickness between the display elements of different colors. stomach.

[0108] The combination of the EL layer 122 that emits white light, the microcavity structure, and the colored film As a result, light with extremely high color purity can be emitted to the display surface side.

[0109] FIG. 6(D) shows a bottom emission type that emits light toward the surface on which it is formed. An example of the application of a display element is shown. Here, as in FIG. 6B, each display element 1 shows an example in which only the light-emitting layer is formed separately between the first and second electrodes.

[0110] In FIG. 6D, a conductive film that transmits visible light is used as the conductive film 121, and a conductive film 123 A conductive film that reflects visible light is used for the display element 721R. B and the display element 721G each emit light toward the conductive film 121 side.

[0111] FIG. 6(E) shows an example in which EL layers of the same configuration are used between display elements exhibiting different colors. Specifically, the EL layer 122W that emits white light and the colored film of each display element are combined. In addition, an example of a configuration for emitting light of different colors is shown.

[0112] FIG. 6E is a modification of FIG. 6C, in which a display element 721R, a display element 721B, and The display element 721G includes a colored film 152R, a colored film 152B, and a colored film 152G. on the protective film 125.

[0113] The above is a description of the configuration example of the light emitting element.

[0114] FIG. 5C shows a circuit diagram corresponding to the configuration shown in FIG. 5B. This corresponds to the circuit diagram of a pixel (sub-pixel).

[0115] For example, the gate (conductive film 111) of the transistor 741a is supplied with a gate signal VG. The source or drain of the transistor 741a is electrically connected to a wiring The film 113a is electrically connected to a wiring to which a source signal VS is applied. A potential VH is applied to one of the source and drain of the transistor 741b (the conductive film 113c). The common electrode (conductive film 123) of the display element 721R is electrically connected to the wiring. The potential VL is electrically connected to a wiring to which the potential VL is applied.

[0116] Note that the pixel configuration is not limited to this, and various circuit configurations can be used.

[0117] <Transistor stacking structure> Another example of a structure in which two transistors are stacked will be described below. Each of the configuration examples shown may be used in appropriate combination with the configurations shown in the cross-sectional configuration examples of the display device. It is possible.

[0118] <Configuration example 1> FIG. 7A shows an example in which a transistor 741c and a transistor 741d are stacked. be.

[0119] The transistor 741c is a transistor 741a illustrated in FIG. 5B, which is provided with a second gate. The conductive film 111b functions as a transistor. The insulating film 133 is provided between the insulating film 136 and the semiconductor film 112a. is.

[0120] The transistor 741d is a transistor 741b illustrated in FIG. 5B, which is provided with a second gate. The conductive film 111c functions as a transistor. The insulating film 136 is provided at a position overlapping with the semiconductor film 112b.

[0121] When a transistor has two gates sandwiching a semiconductor film, the two gates are supplied with the same potential. By applying a current to one of the gates, the on-state current of the transistor can be increased. By applying a potential to control the threshold voltage to one side and a potential to drive the other side, The threshold voltage of the transistor can be controlled.

[0122] <Configuration example 2> FIG. 7B shows an example in which a transistor 741e and a transistor 741b are stacked. be.

[0123] The transistor 741e is a so-called transistor having a gate above the semiconductor film 112a. It is a top-gate type transistor.

[0124] The transistor 741e includes a semiconductor film 112a over an insulating film 731 and a The insulating film 132 is then formed on the insulating film 132. The conductive film 111, the semiconductor film 112a, and the conductive film 11 1, and a conductive film 113a and a conductive film 113b are formed on the insulating film 137. do.

[0125] The transistor 741e is a transistor including a semiconductor film 112a and a conductive film 113a or a conductive film 113b. and the parasitic capacitance between the conductive film 111 and the conductive film 113a or between the conductive film 113b. This is preferable because it can reduce

[0126] FIG. 7B illustrates an example in which the insulating film 132 is formed only in a portion overlapping with the conductive film 111. 7(D), the insulating film 132 covers the end of the semiconductor film 112a. This may also be configured.

[0127] <Configuration example 3> FIG. 7C shows an example in which a transistor 741f and a transistor 741b are stacked. be.

[0128] Transistor 741f functions as a second gate in addition to transistor 741e. The conductive film 111b is connected to the semiconductor film 112a via the insulating film 138. They are arranged in layers.

[0129] FIG. 7C illustrates an example in which the insulating film 132 is formed only in a portion overlapping with the conductive film 111. 7(E), the insulating film 132 covers the end of the semiconductor film 112a. This may also be configured.

[0130] <Configuration Example 4> FIG. 8A shows an example in which a transistor 741a and a transistor 741g are stacked. be.

[0131] The transistor 741g has a gate above the semiconductor film 112b. It is a top-gate type transistor.

[0132] The transistor 741g has a semiconductor film 112b over the insulating film 133 and a An insulating film 139 which functions as a gate insulating film is provided on the insulating film 139. A conductive film 111b and a semiconductor An insulating film 136 covers the conductive film 112a and the conductive film 111b, and a conductive film 11 3c and a conductive film 113d.

[0133] The conductive film 113b and the conductive film 111b are used as the gate of the transistor 741g. It works.

[0134] In the example shown in FIG. 8A, the semiconductor film 112b, the conductive film 113b, and the insulating film 133 are Therefore, the capacitance may be used as a storage capacitance. In this case, it is not necessary to provide a separate capacitive element.

[0135] In FIG. 8A, the insulating film 139 is formed only in a portion overlapping with the conductive film 111b. 7(E) and the like, the end of the semiconductor film 112b is It may be provided so as to cover the

[0136] <Configuration Example 5> FIG. 8B shows an example in which a transistor 741e and a transistor 741g are stacked. The above description of the transistors 741e and 741g can be applied.

[0137] With this configuration, a display device with extremely reduced parasitic capacitance can be realized.

[0138] <Configuration Example 6> FIG. 8C shows an example in which a transistor 741f and a transistor 741g are stacked. The above description of the transistors 741f and 741g can be applied.

[0139] With this configuration, a display device with extremely reduced parasitic capacitance can be realized.

[0140] <Configuration Example 7> FIG. 8D shows an example in which the transistor 741f and the transistor 741h are not stacked. The above description of the transistor 741f can be used.

[0141] The transistor 741h includes a semiconductor film 112b over the insulating film 138 and a An insulating film 139 is formed on the insulating film 139, and a conductive film 111b, a semiconductor film 112b, and a conductive film 111c are formed on the insulating film 139. An insulating film 137 covers the first and second electrodes 113b, and a conductive film 113c and a conductive film 113d are formed on the insulating film 137. has.

[0142] The above is a description of the example of the stacked structure of the transistor.

[0143] <About each component> Each of the above components will be described below.

[0144] <Substrate> A material having a flat surface can be used for the substrate of the display device. The substrate from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic, etc. Materials such as tantalum, sapphire, and organic resins can be used.

[0145] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate that is thick enough to provide flexibility, a flexible display device can be realized. Cut.

[0146] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above-mentioned substrate, a metal substrate or the like can also be used. Metal substrates have high thermal conductivity and the entire substrate Since heat can be easily conducted to the body, local temperature rise of the display device can be suppressed, which is preferable. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less. It is preferable that the thickness is less than 20 μm, and more preferable that the thickness is not less than 50 μm.

[0147] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0148] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0149] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. ×10 -6 Polyamide-imide resin, polyimide resin, PET, etc., with a molecular weight of 0.1 to 1.0 kg / K or less, are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an organic substrate in which inorganic fillers are It is also possible to use a substrate with a lower thermal expansion coefficient by mixing it with resin. Since the substrate is light in weight, the display device using the substrate can also be made light in weight.

[0150] When the above-mentioned materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples are polyvinyl alcohol fibers, polyester fibers, and polyvinyl alcohol fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxy Examples of the fiberglass include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made of glass fiber such as sappan, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fiber body is impregnated with resin and the resin is hardened is formed by using a microfiber. The flexible substrate may be a substrate made of a fiber and a resin. The use of such a structure is preferred because it improves reliability against damage caused by bending or localized pressure. It is.

[0151] Alternatively, glass, metal, or the like that is thin enough to be flexible may be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive may be used.

[0152] A hard coat film (e.g., , silicon nitride, aluminum oxide, etc.) or a film made of a material that can disperse pressure (e.g., Ar In addition, the life of the display element may be reduced due to moisture, etc. In order to suppress this, an insulating film with low water permeability may be laminated on a flexible substrate. For example, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, nitride An inorganic insulating material such as aluminum can be used.

[0153] The substrate may be a laminate of multiple films. In particular, a glass substrate is used as the substrate. By using such a material, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained. do.

[0154] <Transistor> The transistor is made up of a conductive film functioning as a gate electrode, a semiconductor film, and a a conductive film that functions as a drain electrode, and a conductive film that functions as a gate insulating film The above describes the case where a bottom-gate transistor is used. is.

[0155] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. Alternatively, the transistor may be an inverted staggered type. Also, the transistor may be a top gate type or a bottom gate type. Alternatively, gate electrodes may be provided above and below the channel. It may be possible to do so.

[0156] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0157] In addition, the semiconductor material used in the transistor is, for example, a Group 14 element (silicon For the semiconductor film, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0158] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0159] In particular, the semiconductor film has a plurality of crystal parts, and the crystal parts have a c-axis that is aligned with a surface of the semiconductor film on which the semiconductor film is formed. Oriented approximately perpendicular to the upper surface of the semiconductor film, and grain boundaries are observed between adjacent crystal parts. It is preferable to use an oxide semiconductor that cannot be used.

[0160] Such an oxide semiconductor has no crystal grain boundaries, and therefore, when a display device is bent, the display device does not show any deformation. Therefore, the generation of cracks in the oxide semiconductor film due to the applied force can be suppressed. Such oxide semiconductors are suitable for use in display devices that are flexible and can be curved when used. It is possible.

[0161] In addition, by using such a crystalline oxide semiconductor as a semiconductor film, the electrical characteristics This suppresses fluctuations in characteristics, resulting in a highly reliable transistor.

[0162] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be discharged for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the grayscale of the image displayed in each display area. As a result, a display device with extremely reduced power consumption can be realized.

[0163] The semiconductor film may be, for example, at least indium, zinc, and M (aluminum, titanium, gallium). Umium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium The film includes a film represented by In-M-Zn oxide containing metals such as In or hafnium. In addition, it is preferable to reduce variation in electrical characteristics of a transistor including the oxide semiconductor. Therefore, it is preferable to include a stabilizer therewith.

[0164] The stabilizer includes the metals listed under M above, such as gallium, tin, hafnium, etc. Other stabilizers include tungsten, aluminum, or zirconium. are the lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Examples include thulium, ytterbium, and lutetium.

[0165] Examples of oxide semiconductors that form the semiconductor film include In-Ga-Zn oxides, In- Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide, In-L a-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd -Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In-Gd- Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Z n-type oxides, In-Er-Zn-type oxides, In-Tm-Zn-type oxides, In-Yb-Zn In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, In-Hf- Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide can be used. can.

[0166] In this case, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be present.

[0167] The semiconductor film and the conductive film may contain the same metal element among the above oxides. By using the same metal element for the conductor film and the conductive film, the manufacturing cost can be reduced. For example, by using metal oxide targets of the same metal composition, the manufacturing cost can be reduced. In addition, the etching gas or the etching gas used for processing the semiconductor film and the conductive film can be However, the semiconductor film and the conductive film contain the same metal element. For example, the composition of a transistor or a capacitor may differ even if the In some cases, metal elements in the film may be released, resulting in a different metal composition.

[0168] The oxide semiconductor constituting the semiconductor film has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. The off-state current of a transistor can be reduced by using an oxide semiconductor with a wide gap. can be done.

[0169] When the oxide semiconductor constituting the semiconductor film is In-M-Zn oxide, The atomic ratio of metal elements in the sputtering target used to deposit a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In :M:Zn=3:1:2, 4:2:4.1, In:M:Zn=5:1:7, etc. are preferred. The atomic ratio of the semiconductor film to be formed is determined by the above sputtering conditions as an error. This includes a variation of ±40% in the atomic ratio of the metal elements contained in the get.

[0170] As the semiconductor film, an oxide semiconductor film having a low carrier density is used. For example, , the carrier density is 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm 3 Below, More preferably, 1×10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 below, More preferably, 1×10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than 100 Such an oxide semiconductor can be used as a high-purity intrinsic or This means that the impurity concentration is low and the defect level is small. Since the density is low, it can be said that the oxide semiconductor has stable characteristics.

[0171] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition according to the required properties (e.g., the resultant mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defects of the semiconductor film are It is preferable to appropriately set the density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. stomach.

[0172] In the oxide semiconductor that constitutes the semiconductor film, silicon and carbon, which are group 14 elements, When oxygen is contained in the semiconductor film, oxygen vacancies increase and the semiconductor film becomes n-type. The concentrations of silicon and carbon in the membrane (obtained by secondary ion mass spectrometry) were ×10 18 atoms / cm 3 Less than or equal to 2 x 10 17atoms / cm 3 Below and do.

[0173] In addition, when alkali metals and alkaline earth metals combine with oxide semiconductors, they generate carriers. This may result in an increase in the off-state current of the transistor. Alkaline and alkaline earth metals in biological membranes by secondary ion mass spectrometry. The concentration of is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0174] In addition, when nitrogen is contained in the oxide semiconductor that constitutes the semiconductor film, the electrons that are carriers This causes an increase in carrier density, making it easier to convert to n-type. A transistor using a semiconductor tends to be normally on. The nitrogen concentration obtained by secondary ion mass spectrometry in 18 atoms / cm 3 It is preferable to do the following:

[0175] The semiconductor film may also have a non-single crystal structure. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semiconductor ctor), polycrystalline, microcrystalline, or amorphous structures. , the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states.

[0176] An oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and does not contain a crystalline component. Alternatively, the oxide film having an amorphous structure is, for example, a completely amorphous structure without any crystalline portion. do not have.

[0177] In addition, the semiconductor film may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA The film may be a mixed film having two or more of the C-OS region and the single crystal structure region. The composite film may be, for example, a single-layer structure including two or more of the above-mentioned regions, or a laminate structure. It may have a layered structure.

[0178] The semiconductor film is made of the above-mentioned CAC-OS or CAC-metal oxide. It can be formed by

[0179] Transistors using CAC-OS are highly reliable. Since the transistor has a high on-current and field effect mobility and a low off-current, Therefore, CAC-OS is suitable for a wide range of semiconductor devices, including displays. It is ideal for semiconductor devices.

[0180] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even when an extremely high-resolution display is required, the gate driver and source driver It is now possible to form circuits and pixels on the same substrate, reducing the number of components that make up electronic devices. It is possible.

[0181] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, the use of amorphous silicon is preferable because it is more efficient than polycrystalline silicon. Since it can be formed at low temperatures, it is suitable for use as a material for wiring and electrodes below the semiconductor film, and as a material for substrates. It is possible to use materials with low heat resistance, which broadens the range of material choices. For example, a very large glass substrate can be suitably used. Since the impurity region is easily formed in a self-aligned manner, the characteristics of the transistors are not uniform. In this case, it is particularly preferable to use polycrystalline silicon or single crystal silicon. It is suitable for use in the following cases:

[0182] <Conductive film> In addition to the gates, sources, and drains of transistors, various wiring and Materials that can be used for conductive films such as electrodes include aluminum, titanium, chromium, and titanium alloys. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or thallium Examples of the metals include tin and tin oxide, and alloys containing tin as the main component. Films containing the above materials can be used as single layers or as laminated structures. For example, silicon A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, A two-layer structure in which an aluminum film is laminated on a copper-magnesium-aluminum film. Two-layer structure with copper film laminated on alloy film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure is formed by laminating a copper film on a silicon film, a titanium film or titanium nitride film, and an aluminum film on top of that. A titanium film or a copper film is laminated, and a titanium film or a titanium nitride film is further formed on the aluminum film or a copper film. Three-layer structure: a molybdenum film or molybdenum nitride film, and an aluminum film or The copper film is laminated on top of which a molybdenum film or molybdenum nitride film is formed. It is to be noted that oxides such as indium oxide, tin oxide, and zinc oxide may also be used. In addition, copper containing manganese is preferably used because it is possible to improve the controllability of the shape by etching. stomach.

[0183] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tin, etc. such as tin, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metallic materials and alloy materials containing the metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. In the case of using these nitrides, it is sufficient to make them thin enough to have light transmission. A laminated film of materials can be used as the conductive film. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of dilute tin oxide or the like, since the electrical conductivity can be increased. These include conductive films such as various wiring and electrodes that constitute the display device, and conductive films that the display element has. It can also be used for conductive films (conductive films that function as pixel electrodes or common electrodes).

[0184] <Insulating film> Examples of insulating materials that can be used for each insulating film include acrylic and epoxy. Resins, resins with siloxane bonds (e.g., silicone resins), silicon oxide, acid Inorganic insulating materials such as silicon nitride, silicon oxynitride, silicon nitride, and aluminum oxide Fees may also be used.

[0185] In addition, the light emitting element is preferably provided between a pair of insulating films with low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the device. It can be suppressed.

[0186] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0187] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0188] In addition, the protective film shown in Embodiment 1 can be used as an insulating film included in a display device. do.

[0189] <Light emitting element> The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes elements whose brightness can be controlled. For example, LEDs (Light Emitting Diodes). An electroluminescent diode, an organic EL element, an inorganic EL element, etc. can be used.

[0190] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode that extracts the light uses a conductive film that transmits visible light. For the electrode on the side from which light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0191] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole transporting material, hole blocking material, high electron transporting material, electron injection The material contains a highly conductive material or a bipolar material (a material with high electron transport and hole transport properties). The insulating layer may further include a layer containing the insulating layer.

[0192] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). The insulating layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0193] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are These molecules recombine and the luminescent material contained in the EL layer emits light.

[0194] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by two or more luminescent materials may be of complementary colors. By selecting a light-emitting material so as to satisfy the above relationship, white light can be obtained. For example, Luminescent substances that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that emit light containing two or more of the spectral components of R, G, and B, It is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. A light-emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) It is preferable to apply the above-mentioned method. Also, the emission spectrum of the material having a peak in the yellow wavelength region is preferably a material that also has spectral components in the green and red wavelength regions.

[0195] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably laminated. The layers may be stacked in contact with each other or separated by an area that does not contain any luminescent material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (e.g., host material, assist material) as the phosphorescent layer, and both of the emitting layers A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. In addition, the driving voltage is reduced.

[0196] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0197] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide, indium It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. In addition, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metallic materials such as iron, cobalt, copper, palladium, or titanium, including these metallic materials Alloys or nitrides of these metal materials (e.g., titanium nitride) may also be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive film. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, the electrical conductivity can be increased, which is preferable. Graphene or the like may also be used. .

[0198] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above-mentioned metal materials and alloys may be used. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. The alloy containing silver and copper is In addition, when the aluminum film or the aluminum alloy film is in contact with the aluminum film, the heat resistance is high. By laminating a metal film or a metal oxide film on the insulating layer, oxidation can be suppressed. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. The conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and indium may be laminated. laminated film of silver-magnesium alloy and indium-tin-oxide, etc. It can be used.

[0199] The electrodes may be formed by vapor deposition or sputtering. The shape is created using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method. It can be achieved.

[0200] In addition, the above-mentioned light-emitting layer, the substance having a high hole-injecting property, the substance having a high hole-transporting property, the The layer including a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, and polymers). For example, by using quantum dots in the light-emitting layer, It can also function as such.

[0201] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0202] <Adhesive> Adhesives include light-curing adhesives such as ultraviolet-curing adhesives, reaction-curing adhesives, and heat-curing adhesives. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. Two-part mixed resin may also be used. It may be used.

[0203] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture may enter the element. This is preferable because it can suppress the occurrence of the problem and improve the reliability of the display device.

[0204] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, and di Ruthenium, etc. can be used.

[0205] <Connection parts> The connection material is anisotropic conductive film (ACF). uctive Film) and Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0206] <Colored film> Materials that can be used for the colored film include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0207] <Light-shielding film> Materials that can be used as the light-shielding film include carbon black, titanium black, Examples of the material include metals, metal oxides, and composite oxides including solid solutions of multiple metal oxides. The film may be a film containing a resin material, or may be a thin film of an inorganic material such as a metal. In addition, the light-shielding film may be a laminated film of a film containing a material of a colored film. A film containing a material used for a colored film that transmits light and a material used for a colored film that transmits light of a different color By using the same material for the colored film and the light-shielding film, a laminated structure with a film containing This is preferable because it allows the equipment to be standardized and the process to be simplified.

[0208] The above is a description of each component.

[0209] <Production method> Here, an example of a method for manufacturing a display device using a flexible substrate will be described.

[0210] Here, display elements, circuits, wiring, electrodes, optical members such as colored films and light-shielding films, and insulating films are For example, the element layer includes a display element. In addition to display elements, wiring electrically connecting to display elements, transistors used in pixels and circuits, etc. The device may include the following elements:

[0211] In addition, in this case, at the stage where the display element is completed (the manufacturing process is completed), the element layer is The supporting and flexible member is called a substrate. For example, the substrate may have a thickness of This also includes extremely thin films with a thickness of 10 nm or more and 300 μm or less.

[0212] Representative methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods as follows: One is to form an element layer directly on a substrate. The other is to form an element layer on a supporting base material different from the substrate, and then peel the element layer from the supporting base material. The method is to transfer the element layer to the substrate by using a semiconductor device. In addition to the above method, an element layer is formed on a non-flexible substrate, and the substrate is thinned by polishing or the like. There is also a method for providing flexibility by

[0213] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. If the element layer is formed while the plate is fixed to the supporting substrate, the plate is easily transported within and between devices. This is preferable because it is easier.

[0214] In addition, when a method is used in which an element layer is formed on a supporting base material and then transferred to a substrate, the supporting base material is first A release film and an insulating film are laminated on a support substrate, and an element layer is formed on the insulating film. The element layer is then transferred to the substrate. It is only necessary to select a material that causes peeling at the interface between the release film and the insulating film or within the release film. In this method, a highly heat-resistant material is used for the support substrate and the release film, and thus the element layer is formed. This allows the upper limit of the temperature during the formation of the semiconductor device to be increased, forming a device layer having more reliable devices. This is preferable because it is possible.

[0215] For example, a film containing a high melting point metal material such as tungsten as a peeling film and a film containing the metal material Films containing oxides are laminated, and silicon oxide and silicon nitride are used as insulating films on the peeling film. It is preferable to use a film in which a plurality of layers of silicon oxynitride, silicon nitride oxide, or the like are stacked. In this specification, an oxynitride is a material having a composition in which the oxygen content is higher than that of nitrogen. Nitrogen oxide refers to a material that contains more nitrogen than oxygen in its composition. Point.

[0216] The element layer and the support substrate can be peeled off by applying a mechanical force or by applying an etching force to the peeling film. Examples include etching the surface or allowing a liquid to penetrate the peeled interface. Alternatively, the difference in the thermal expansion coefficients of the two layers that form the peeling interface can be utilized to heat or cool the material. The peeling may be performed by

[0217] In addition, when peeling is possible at the interface between the support substrate and the insulating film, it is not necessary to provide a peeling film.

[0218] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating film. At this time, a part of the organic resin is locally heated using a laser beam or the like. Or, the organic resin is physically cut or penetrated with a sharp object to remove it. Alternatively, a starting point may be formed, and peeling may be performed at the interface between the glass and the organic resin.

[0219] Alternatively, a heat generating member is provided between the supporting substrate and the insulating film made of an organic resin, and the heat generating member is heated. The heat generating member may be heated to separate the insulating film at the interface between the heat generating member and the insulating film. materials that generate heat when an electric current is passed through them, materials that generate heat when they absorb light, and materials that generate heat when they are exposed to a magnetic field. Various materials can be used, such as materials that generate heat when a voltage is applied. The material can be selected from semiconductors, metals, and insulators.

[0220] In the above-mentioned method, the insulating film made of organic resin is used as a substrate after peeling. It is possible.

[0221] The above is a description of the method for manufacturing a flexible display device.

[0222] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0223] (Embodiment 4) In this embodiment, a hybrid display which is an example of a display device according to one embodiment of the present invention will be described. This article explains:

[0224] In addition, the hybrid display method is a method in which multiple lights are displayed in the same pixel or the same sub-pixel. A hybrid display is a method of displaying a display, characters, and / or images. A plurality of lights are displayed in the same pixel or the same sub-pixel included in the display unit, and characters and / or images are displayed. It is a collection that displays.

[0225] As an example of a hybrid display method, a first light and a second light are displayed in the same pixel or the same subpixel. In this case, the same pixel or the second light is displayed at different timings. In the same subpixel, the same color tone (red, green, or blue, or cyan, magenta, or yellow) The first light and the second light of any one of the four rows are displayed simultaneously, and a character or / and images can be displayed.

[0226] As an example of a hybrid display method, a method is used in which reflected light and spontaneous emission are displayed in the same pixel or the same subpixel. There is a method to display the same color by pixels. Reflective light and self-luminous (e.g. OLED (Organic Light Emitting Diode) nic Light Emitting Diode (LED) light, etc.) on the same pixel or can be displayed simultaneously in the same sub-pixel.

[0227] In the hybrid display method, the pixels are not the same pixel or the same subpixel, but adjacent pixels. In addition, the first light and the second light may be displayed in a pixel or adjacent subpixels. To display the lights simultaneously means to display the first and second lights simultaneously to such an extent that the human eye does not perceive flickering. This refers to displaying two lights at the same time for the same period of time. If the human eye does not detect flicker, then it is considered to be the first The display period of the first light and the display period of the second light may be shifted from each other.

[0228] In addition, a hybrid display is a display in which multiple display elements are arranged in the same pixel or in the same subpixel. A display element is a group of display elements each of which displays light during the same period. A hybrid display is a display device that uses multiple display elements and displays in the same pixel or the same subpixel. The active elements include switches, transistors, thin film transistors, and the like. Since an active element is connected to each of the multiple display elements, The display of each of the display elements can be controlled individually.

[0229] In this specification, the term "a product" refers to a product that satisfies one or more of the above-mentioned configurations. This is called a hybrid display.

[0230] A hybrid display has multiple display elements in the same pixel or subpixel. The display elements may be, for example, reflective elements that reflect light and transparent elements that emit light. The reflective element and the self-luminous element are controlled independently. The hybrid display can utilize both reflected light and self-luminous light in the display area. It has the ability to display characters and / or images using either or both of the above.

[0231] A display device according to one embodiment of the present invention has a pixel provided with a first display element that reflects visible light. Alternatively, the display device may have a pixel provided with a second display element that emits visible light. Alternatively, a pixel having a first display element and a second display element may be provided. Cut.

[0232] In this embodiment, a first display element that reflects visible light and a second display element that emits visible light are used. A display device having a display device and a display element is described.

[0233] The display device includes a first light reflected by a first display element and a second light emitted by a second display element. The display device has a function of displaying an image by using either one or both of the above. is the amount of first light reflected by the first display element and the amount of second light emitted by the second display element. By controlling the amount of each of these, it has the function of expressing gradation.

[0234] The display device also expresses gradations by controlling the amount of reflected light from the first display element. The gradation is expressed by controlling the amount of light emitted from the first pixel and the second display element. It is preferable to have a configuration having a second pixel. The first pixel and the second pixel are, for example, A plurality of these are arranged in a matrix to form a display unit.

[0235] The first pixels and the second pixels are arranged in the display area with the same number and pitch. In this case, it is preferable that the adjacent first pixel and second pixel are combined to form a pixel unit. This can be called a "first pixel display". an image displayed only by a plurality of second pixels, and an image displayed only by a plurality of first pixels and a plurality of second pixels. Both of the two pixels of the displayed image can be displayed in the same display area.

[0236] The first display element of the first pixel may be an element that reflects external light to display an image. Since such elements do not have a light source, the power consumption during display is extremely small. It becomes possible to do so.

[0237] The first display element can typically be a reflective liquid crystal element. As a display element, a shutter-type MEMS (Micro Electro Mechanical Systems) In addition to MEMS elements and optical interference type MEMS elements, electrophoretic method, electrowetting method, electronic liquid powder method, etc. An element to which the above is applied can be used.

[0238] The second display element of the second pixel has a light source and displays an image using light from the light source. In particular, a device that emits light from a light-emitting substance by applying an electric field can be used. It is preferable to use electroluminescent elements that can be extracted. The light emitted by the projector has high color reproducibility (wide color gamut) because its brightness and chromaticity are not affected by external light. It is possible to provide a high-contrast, i.e., vivid display.

[0239] The second display element may be, for example, an OLED or an LED (Light Emitting Diode). ode), QLED(Quantum-dot Light Emitting Dio) de) A self-luminous light-emitting element such as a semiconductor laser can be used. The display element has a backlight as a light source and a transmitted light from the backlight. Alternatively, a combination of a transmission type liquid crystal element for controlling the amount of light may be used.

[0240] The first pixel may be a sub-pixel that exhibits, for example, white (W) or red (R) and green (G) colors. The pixel may have sub-pixels that emit three colors of light, i.e., blue (B), green (C), and blue (D). Similarly, the second pixel may be a subpixel that exhibits, for example, white (W), or a subpixel that exhibits, for example, red (R), green (G), or The configuration can have sub-pixels that emit three colors of light: blue (B), green (G), and blue (B). The sub-pixels of each of the first pixel and the second pixel may have four or more colors. The more types of sub-pixels there are, the more power consumption can be reduced and the better the color reproduction can be. This can be done.

[0241] In one aspect of the present invention, a first mode displays an image at a first pixel, and a second mode displays an image at a second pixel. and a third mode in which an image is displayed using the first pixel and the second pixel. Also, different image signals can be applied to the first pixel and the second pixel. You can also input a picture and display the composite image.

[0242] The first mode is a mode in which an image is displayed using light reflected by a first display element. The first mode does not require a light source, so it is a driving mode with extremely low power consumption. For example, This is effective when the illuminance of the external light is sufficiently high and the external light is white light or light close to white light. Mode 1 is a display mode suitable for displaying text information such as books and documents. In addition, the use of reflected light allows for a display that is gentle on the eyes and reduces eye fatigue. It has an effect.

[0243] In the second mode, an image is displayed by utilizing light emitted by the second display element. Therefore, it is extremely vivid (high contrast and color) regardless of the illuminance or chromaticity of the external light. For example, when the illuminance of external light is extremely low, such as at night or in a dark room, This is effective when the display is very small. Also, when the outside light is dark, a bright display may cause the user to To prevent this, the second mode reduces the brightness of the display. This not only reduces glare but also reduces power consumption. The second mode is for displaying vivid images and smooth videos. This is the appropriate mode.

[0244] In the third mode, both the reflected light by the first display element and the emitted light by the second display element are Specifically, the light emitted by the first pixel and the light emitted by the second pixel are used to display the image. The light emitted by the first pixel and the light emitted by the adjacent second pixel are mixed to produce a single color. It provides a brighter display than the first mode, while consuming less power than the second mode. For example, under indoor lighting or in the early morning or early evening, when the illuminance of external light is relatively high, This is effective when the brightness is low or when the chromaticity of the external light is not white.

[0245] Hereinafter, a more specific example of one embodiment of the present invention will be described with reference to the drawings.

[0246] [Example of display device configuration]

[0247] FIG. 9 illustrates a display region 70 included in a display device of one embodiment of the present invention. The area 70 has a plurality of pixel units 75 arranged in a matrix. 5 has a pixel 76 and a pixel 77.

[0248] In FIG. 9, pixels 76 and 77 are red (R), green (G), and blue (B) pixels, respectively. An example is shown in which display elements corresponding to three colors are provided.

[0249] The pixel 76 includes a display element 76R corresponding to red (R) and a display element 76G corresponding to green (G). 6G, and a display element 76B corresponding to blue (B). Display elements 76R, 76G, 76B are second display elements that utilize light from a light source.

[0250] The pixel 77 includes a display element 77R corresponding to red (R) and a display element 7 7G, and a display element 77B corresponding to blue (B). are first display elements that utilize reflection of external light.

[0251] The above is a description of the configuration example of the display device.

[0252] [Pixel unit configuration example] Next, the pixel unit 75 will be described with reference to FIGS. 10A, 10B, and 10C are schematic diagrams showing configuration examples of the pixel unit 75.

[0253] The pixel 76 includes a display element 76R, a display element 76G, and a display element 76B. 6R is a gradation corresponding to red included in the second gradation value input to the pixel 76, which has a light source. The display element 76G emits red light R2 having a luminance according to the value of the pixel value toward the display surface. Similarly, B emits green light G2 or blue light B2 toward the display surface.

[0254] The pixel 77 includes a display element 77R, a display element 77G, and a display element 77B. 7R is a gradation that reflects external light and corresponds to red included in the first gradation value input to pixel 77. The red light R1 having a luminance according to the adjustment value is emitted toward the display surface. Similarly, 7B emits green light G1 or blue light B1 toward the display surface.

[0255] [First mode] FIG. 10A shows a display element 77R, a display element 77G, and a display element 77B that reflect external light. 10A shows an example of an operation mode in which the pixel is driven to display an image. The unit 75 does not drive the pixel 76 when, for example, the illuminance of the external light is sufficiently high. By mixing only the light from pixel 77 (light R1, light G1, and light B1), It is also possible to emit light of a specific color 79 onto the display surface. This allows for extremely low power consumption. The movement can be carried out.

[0256] [Second mode] FIG. 10B shows a display device in which the display elements 76R, 76G, and 76B are driven to display an image. 10B shows an example of an operation mode for displaying the pixel unit 75. For example, when the illuminance of the external light is extremely low, the pixel 77 is not driven and the pixel 76 is driven. By mixing only these lights (light R2, light G2, and light B2), a light of a given color is obtained. 9 can be projected onto the display surface. This allows for a vivid display. In addition, by lowering the brightness when the illuminance of external light is low, the glare felt by the user can be reduced. Both can reduce power consumption.

[0257] [Third mode] FIG. 10C shows a display element 77R, a display element 77G, and a display element 77B that reflect external light. The light-emitting display elements 76R, 76G, and 76B are all driven to display an image. 10C shows an example of an operation mode for displaying the pixel unit 75. By mixing six lights, R1, G1, B1, R2, G2, and B2, This allows light 79 of a predetermined color to be emitted toward the display surface.

[0258] Therefore, the display device shown in this embodiment has a light-emitting display element and a reflective display element. For example, a reflective display element may be used. When the display area 70 is being displayed, a selection area is displayed using a light-emitting display element. In addition, when the display area 70 is displayed using a light-emitting display element, The selected area may be displayed by a display element. Alternatively, the grayscale data of a reflective display element may be changed. Alternatively, the grayscale data of a light-emitting display element may be changed to display the selected area. The selection area may be displayed by

[0259] The above is a description of an example of the configuration of the pixel unit 75.

[0260] Next, a specific example of the configuration of the hybrid display will be described. The display device has both a reflective liquid crystal element and a light emitting element, and can operate in both a transmissive mode and a reflective mode. It is a display device capable of displaying the above.

[0261] [Configuration example] FIG. 11A is a block diagram showing an example of the configuration of the display device 400. The display unit 761b has a plurality of pixels 410 arranged in a matrix. The device 400 includes a circuit GD and a circuit SD. In addition, the device 400 includes a plurality of pixels 41 arranged in a direction R. 0, a plurality of wirings GD1, a plurality of wirings GD2, and a plurality of wirings AN electrically connected to the circuit GD O, and a plurality of wirings CSCOM. The semiconductor device has a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the circuit SD.

[0262] For simplicity, a configuration having one circuit GD and one circuit SD is shown here. A circuit GD and a circuit SD for driving the crystal element, and a circuit GD and a circuit SD for driving the light emitting element. may be provided separately.

[0263] The pixel 410 has a reflective liquid crystal element and a light emitting element. The substrate and the light emitting element have an overlapping portion.

[0264] FIG. 11B1 shows a configuration example of a conductive film 311b included in the pixel 410. b functions as a reflective electrode of the liquid crystal element in the pixel 410. An opening 451 is provided.

[0265] In FIG. 11B1, a light-emitting element 360 located in a region overlapping with the conductive film 311b is indicated by a dashed line. The light-emitting element 360 is disposed so as to overlap with the opening 451 of the conductive film 311b. As a result, the light emitted by the light emitting element 360 is emitted to the display surface side through the opening 451. can be.

[0266] In FIG. 11(B1), pixels 410 adjacent in the direction R correspond to different colors. At this time, as shown in FIG. 11(B1), in two pixels adjacent to each other in the direction R, the openings 4 51 are provided at different positions on the conductive film 311b so as not to be arranged in a line. This is preferable. It is possible to separate the two light emitting elements 360, and the light emitting elements 360 emit light. The phenomenon in which light incident on a pixel 410 enters the colored film of the adjacent pixel 410 (also called light leakage) is prevented. In addition, the two adjacent light emitting elements 360 can be arranged apart from each other. Therefore, even when the EL layer of the light emitting element 360 is separately produced using a shielding mask or the like, This makes it possible to realize a display device with high resolution.

[0267] In addition, an arrangement as shown in FIG. 11(B2) may also be used.

[0268] If the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is too large, The display becomes dark. Also, the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings If the value is too small, the display using the light emitting element 360 will be too dark.

[0269] In addition, the area of ​​the opening 451 provided in the conductive film 311b functioning as a reflective electrode is too small. As a result, the efficiency of light that can be extracted from the light emitted by the light emitting element 360 decreases.

[0270] The shape of the opening 451 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. It may also be in the form of thin stripes, slits, or a checkered pattern. The apertures 451 may be arranged close to adjacent pixels. Preferably, the apertures 451 are arranged so that they display the same color. This makes it possible to suppress light leakage.

[0271] [Circuit configuration example] 12 is a circuit diagram showing a configuration example of a pixel 410. In FIG. 12, two adjacent pixels 9. The difference from FIG. 9 is that image data is written to a capacitance element of a pixel circuit. 13 shows an example in which wiring S1 and wiring S2 are inserted.

[0272] The pixel 410 includes a switch SW1, a capacitance element C1, a liquid crystal element 340, a switch SW2, and a transistor. The pixel 410 includes a transistor M, a capacitance element C2, and a light-emitting element 360. Wiring GD1, wiring GD3, wiring ANO, wiring CSCOM, wiring S1, and wiring S2 are electrically 12, the wiring VCO M1 and a wiring VCOM2 electrically connected to the light-emitting element 360 are shown.

[0273] FIG. 12 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0274] The switch SW1 has a gate connected to the wiring GD3 and a source or drain connected to the wiring S1, and the other of the source and drain is connected to one electrode of the capacitance element C1 and the liquid crystal element The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

[0275] The switch SW2 has a gate connected to the wiring GD1 and a source or drain The other of the source and drain is connected to one electrode of the capacitance element C2. The other electrode of the capacitance element C2 is connected to the wiring CSCOM. The other of the source and the drain of the transistor M is connected to one of the light emitting elements 360. The other electrode of the light emitting element 360 is connected to the wiring VCOM2. There are.

[0276] In FIG. 12, a transistor M has two gates that sandwich a semiconductor. These are connected to form This increases the current that the transistor M can pass. It is possible.

[0277] A signal for controlling the switch SW1 to a conductive state or a non-conductive state is applied to the wiring GD3. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal of the liquid crystal element 340 can be applied. The OM can be given a predetermined electrical potential.

[0278] A signal for controlling the switch SW2 to a conductive state or a non-conductive state is applied to the wiring GD1. A potential difference that causes the light emitting element 360 to emit light is generated between the wiring VCOM2 and the wiring ANO. A potential that controls the conduction state of the transistor M can be applied to the wiring S2. A signal can be provided to control the

[0279] In the pixel 410 shown in FIG. 12, for example, when performing a reflective mode display, the wiring GD3 and The liquid crystal element 340 is driven by a signal applied to the wiring S1 and displays the image by optical modulation. In addition, when displaying in a transmissive mode, the wiring GD1 and the wiring S2 are provided with The light emitting element 360 can be driven by a signal to emit light for display. When driving in this mode, the wiring GD1, the wiring GD3, the wiring S1, and the wiring S2 are It can be driven by a signal applied to it.

[0280] In FIG. 12, one pixel 410 includes one liquid crystal element 340 and one light emitting element 360. FIG. 13A shows an example in which one pixel 410 has one The liquid crystal element 340 and the four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, An example with a diameter of 60w is shown.

[0281] In FIG. 13A, in addition to the example of FIG. 12, a line GD4 and a line S3 are connected to a pixel 410. It is being done.

[0282] In the example shown in FIG. 13A, for example, four light emitting elements 360r, 360g, The light emitting element 360b and the light emitting element 360w are respectively designated as red (R), green (G), and blue (B). A light-emitting element that exhibits white (W) or red (G) can be used as the liquid crystal element 340. In this case, a reflective liquid crystal element that exhibits white light can be used. When the display is in the transmissive mode, a white display with high reflectivity can be achieved. When the above is performed, a display with high color rendering can be achieved with low power consumption.

[0283] 13B shows a configuration example of a pixel 410. The pixel 410 has an electrode 31 A light emitting element 360w overlaps with an opening of the electrode 311, and a light emitting element disposed around the electrode 311. The light emitting element 360r, the light emitting element 360g, and the light emitting element 360b. It is preferable that the light emitting element 360g and the light emitting element 360b have approximately the same light emitting area.

[0284] [Display panel configuration example] FIG. 14 is a perspective schematic diagram of a display device 300 according to an embodiment of the present invention. The appearance is the same as that of the display device 710 shown in FIG.

[0285] FIG. 14 shows an enlarged view of a part of the display unit 761b. The conductive film 311b of the display element is arranged in a matrix. 3, has a function of reflecting visible light, and functions as a reflective electrode of the liquid crystal element 340 described later.

[0286] As shown in FIG. 14, the conductive film 311b has an opening. The light emitting element 360 is disposed on the substrate 751a side. The light is emitted toward the substrate 752a through the opening 11b.

[0287] In addition, an input device 366 can be provided on the substrate 752a. For example, A capacitive touch sensor may be provided so as to overlap the display portion 761b. A touch sensor may be provided between the substrate 752a and the substrate 751a. When a touch sensor is provided between the touch panel 751a and the touch panel 751b, a capacitive touch sensor or an optical touch sensor may be used. An optical touch sensor using an electric conversion element may also be applied.

[0288] [Cross-section example 1] FIG. 15 shows a part of the area including the FPC 763a and the circuit section 7 of the display device shown in FIG. When a part of the area including the display portion 62a and a part of the area including the display portion 761b are cut, An example of a cross section is shown.

[0289] The display device has an insulating film 220 between the substrate 751a and the substrate 752a. Between 751a and the insulating film 220, the light emitting element 360, the transistor 201, and the transistor 2 05, a transistor 206, a colored film 174, etc. Also, the insulating film 220 and the substrate 752 Between the substrate 752a and the insulating film 22, there are a liquid crystal element 340, a colored film 175, and the like. 0 is bonded via an adhesive 183, and the substrate 751a and the insulating film 220 are bonded via an adhesive 182. The screws are glued in place.

[0290] The transistor 206 is electrically connected to the liquid crystal element 340. The transistor 205 and the transistor 206 are electrically connected to the optical element 360. Since the insulating film 220 is also formed on the surface of the substrate 751a side, these can be formed in the same process. It can be made by

[0291] The substrate 752a includes a colored film 175, a light-shielding film 176, an insulating film 165, and a liquid crystal element 340. A conductive film 313 functioning as a common electrode, an alignment film 173b, an insulating film 167, etc. are provided. The insulating film 167 serves as a spacer for maintaining the cell gap of the liquid crystal element 340. It works.

[0292] On the substrate 751a side of the insulating film 220, an insulating film 211, an insulating film 212, an insulating film 213, and an insulating film 214 are provided. The insulating film 211 is provided with insulating films such as an insulating film 214 and an insulating film 215. The insulating film 212, the insulating film 213, and the insulating film 214 function as a gate insulating film of a transistor. The insulating film 214 is provided to cover each transistor. The insulating film 214 and the insulating film 215 function as a planarizing film. In this embodiment, the insulating film 212 and the insulating film 213 are used as insulating films for covering the transistors and the like. Although the insulating film 214 has three layers, the present invention is not limited to this and may have four or more layers. The insulating film 2 serving as a flattening film may be a single layer or a double layer. Item 14 need not be provided if unnecessary.

[0293] In addition, the transistors 201, 205, and 206 are partially A conductive film 221 that functions as a gate, and a conductive film 2 that partially functions as a source or drain 22 and a semiconductor film 231. In this example, the same conductive film is processed into multiple layers. , have the same hatching pattern.

[0294] The liquid crystal element 340 is a reflective liquid crystal element. The liquid crystal element 340 is made of a conductive film 370, a liquid crystal 3 12, and the conductive film 313 are laminated. A conductive film 311b that reflects visible light is provided in contact with the side of the conductive film 311b. 251. The conductive film 370 and the conductive film 313 contain a material that transmits visible light. In addition, an alignment film 173a is provided between the liquid crystal 312 and the conductive film 370. An alignment film 173b is provided between the electrodes 313.

[0295] A light diffusion plate 129 and a polarizing plate 140 are disposed on the outer surface of the substrate 752a. A linear polarizing plate may be used as 40, but a circular polarizing plate may also be used. For example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. This makes it possible to suppress reflection of external light. In addition, the liquid crystal element 340 is provided with a polarizing plate 129. The desired contrast can be achieved by adjusting the cell gap, orientation, driving voltage, etc. This can be done.

[0296] In the liquid crystal element 340, the conductive film 311b has a function of reflecting visible light, and the conductive film 31 The light incident from the substrate 752a side is polarized by the polarizing plate 140. The light is polarized by the conductive film 311b, passes through the conductive film 313 and the liquid crystal 312, and is reflected by the conductive film 311b. The light passes through the liquid crystal 312 and the conductive film 313 again and reaches the polarizing plate 140. The orientation of the liquid crystal 312 is controlled by applying a voltage between the film 311b and the conductive film 313, and the light In other words, the intensity of the light emitted through the polarizing plate 140 can be controlled by In addition, the colored film 175 absorbs light outside a specific wavelength range. As a result, the extracted light exhibits, for example, red color.

[0297] The light emitting element 360 is a bottom emission type light emitting element. A laminate in which a conductive film 191, an EL layer 192, and a conductive film 193b are laminated in this order from the film 220 side. In addition, the conductive film 193a is provided to cover the conductive film 193b. The conductive film 193b contains a material that reflects visible light, and the conductive film 191 and the conductive film 193a transmit visible light. The light emitted by the light emitting element 360 passes through the colored film 174, the insulating film 220, the opening 2 51, and is emitted to the substrate 752a side via the conductive film 313 and the like.

[0298] A protective film 228 is provided on the conductive film 193a and the insulating film 216 included in the light emitting element 360. The protective film 228 can be the protective film 28 described in the embodiment mode 1. By providing the protective film 228 on the optical element 360, water, acid, etc. are prevented from entering the light emitting element 360 from the outside. It is possible to prevent the diffusion of elements such as fluorine and the like, and to reduce deterioration of the light emitting element 360. In addition, a display device having a highly reliable light-emitting element can be manufactured.

[0299] In the display device shown in FIG. 15, the insulating film 213 and the protective film 228 are in contact with each other in the region 209. The region 209 is provided in a ring shape in the periphery of the display device, so that the insulating film 213 A light emitting element 360 is provided inside the area surrounded by the protective film 228. Preventing water, oxygen, etc. from diffusing into the light emitting element 360 from the top, bottom, and sides of the device is possible and preferred.

[0300] In addition, in FIG. 15, a structure in which the protective film 228 contacts the insulating film 213 is shown. 228 may be in contact with the insulating film 211 or the insulating film 212 .

[0301] As shown in FIG. 15, the opening 251 is provided with a conductive film 370 that transmits visible light. In this way, even in the area overlapping with the opening 251, the other area Since the liquid crystal 312 is oriented in the same manner as in the other regions, poor alignment of the liquid crystal occurs at the boundary between these regions. This can prevent unintended light leakage.

[0302] An insulating film 217 is provided on the insulating film 216 that covers the end portion of the conductive film 191. The film 217 acts as a spacer to prevent the insulating film 220 and the substrate 751a from coming closer than necessary. The EL layer 192 and the conductive film 193a are also shielded by a shielding mask (metal mask). In the case where the mask is formed using a masking agent, in order to prevent the mask from coming into contact with the surface on which the mask is to be formed, Note that the insulating film 217 does not have to be provided if it is not necessary.

[0303] One of the source and drain of the transistor 205 is connected to the light-emitting element 3 through a conductive film 224. It is electrically connected to the conductive film 191 of 60 .

[0304] One of the source and drain of the transistor 206 is connected to the conductive film 31 through a connection portion 207. The conductive film 311b and the conductive film 370 are provided in contact with each other. Here, the connection portion 207 is an opening provided in the insulating film 220. This is a portion that connects the conductive films provided on both sides of the insulating film 220 together via the insulating film 220 .

[0305] A connection portion 204 is provided in the area where the substrate 751a and the substrate 752a do not overlap. The connection portion 204 is electrically connected to the FPC 763a via the connection body 242. The connection portion 204 has a similar structure to the connection portion 207. The upper surface of the connection portion 204 is covered with the conductive film 37. 1. The conductive film obtained by processing the same conductive film as that of the connecting portion 204 is exposed. and FPC 763a can be electrically connected via connector 242.

[0306] A connection portion 252 is provided in a portion of the area where the adhesive 183 is provided. In 52, a conductive film obtained by processing the same conductive film as the conductive film 370 and a conductive film 313 A part of the wiring conductor 243 is electrically connected to the substrate 752a side. The conductive film 313 is connected to the substrate 751a via the FPC 763a. A signal or potential can be provided through connection 252 .

[0307] The connector 243 may be, for example, a conductive particle. For this purpose, particles of organic resin or silica, etc., whose surfaces are coated with a metal material can be used. It is preferable to use nickel or gold as the metal material, since this can reduce the contact resistance. Particles coated with layers of two or more metal materials, such as nickel coated with gold, are used. It is preferable to use a material that is elastically deformable or plastically deformable as the connector 243. In this case, the connectors 243, which are conductive particles, are preferably used as shown in FIG. In this way, the connector 243 and the electric This increases the contact area with the conductive film that is electrically connected, reducing contact resistance and preventing connection failures. The occurrence of such defects can be suppressed.

[0308] The connector 243 is preferably disposed so as to be covered with the adhesive 183. For example, The connecting bodies 243 may be dispersed in the adhesive 183 before curing.

[0309] FIG. 15 illustrates an example in which a transistor 201 is provided as the circuit portion 762a. is.

[0310] In FIG. 15, a transistor 201 and a transistor 205 are shown as examples in which a channel is formed. The semiconductor film 231 is sandwiched between two gates. The other gate is a conductive film overlapping the semiconductor film 231 via the insulating film 212. The transistor is configured with a film 223. The voltage can be controlled by connecting two gates and applying the same signal to them. Such a transistor may be driven by supplying a It is possible to increase the field effect mobility compared to conventional transistors, and increase the on-current. As a result, a circuit capable of high speed operation can be fabricated. By using a transistor with a large on-current, Therefore, even if the number of wirings increases when the display device is made larger or has higher resolution, It is possible to reduce signal delay in the display and suppress display unevenness.

[0311] Note that the transistors in the circuit portion 762a and the transistors in the display portion 761b In addition, the plurality of transistors included in the circuit portion 762a may all have the same structure. The transistors may have the same structure, or transistors having different structures may be used in combination. In addition, the plurality of transistors included in the display unit 761b may all have the same structure. Transistors of different structures may be used in combination.

[0312] At least one of the insulating film 212 and the insulating film 213 that cover each transistor is resistant to water and hydrogen. It is preferable to use a material in which impurities are unlikely to diffuse, such as the insulating film 212 or the like. The insulating film 213 can function as a barrier film. It is possible to effectively suppress the diffusion of impurities from the outside into the transistor. This makes it possible to realize a highly reliable display device.

[0313] On the substrate 752a side, an insulating film 165 is provided to cover the colored film 175 and the light-shielding film 176. The insulating film 165 may also function as a planarizing film. As a result, the surface of the conductive film 313 can be made approximately flat, and the alignment state of the liquid crystal 312 can be made uniform. do.

[0314] [Cross-sectional configuration example 2] The display device shown in FIG. 16 has a top-gate type for each transistor in the configuration shown in FIG. This is an example of a top-gate transistor. By applying this, the parasitic capacitance can be reduced, and the frame frequency of the display can be increased. can be done.

[0315] The transistor included in the display device of one embodiment of the present invention includes a conductive film functioning as a gate electrode. a semiconductor film, a conductive film functioning as a source electrode, and a conductive film functioning as a drain electrode. and an insulating film that functions as a gate insulating film.

[0316] The structure of the transistor is not particularly limited. For example, a planar type transistor Alternatively, a staggered type transistor may be used, or an inversely staggered type transistor may be used. In addition, the transistor may have either a top gate type or a bottom gate type structure. Alternatively, gate electrodes may be provided above and below the channel.

[0317] A protective film 228 is provided on the conductive film 193a and the insulating film 216 included in the light emitting element 360. The protective film 228 is in contact with the insulating film 213 in a region 230. 30 is provided in a ring shape in the peripheral portion of the display device, so that the insulating film 213 and the protective film 22 The light emitting element 360 is provided inside the area surrounded by 8. As a result, the top and bottom surfaces of the display device It is possible to prevent water, oxygen, etc. from diffusing into the light emitting element 360 from the front and side surfaces. I wish.

[0318] In addition, in FIG. 16, a structure in which the protective film 228 contacts the insulating film 213 is shown. 228 may be in contact with the insulating film 211 or the insulating film 212 .

[0319] Each component of the display device shown in this embodiment may be the same as that of the display device shown in the third embodiment. The components of the above can be used.

[0320] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0321] (Embodiment 5) In this embodiment, a display module that can be manufactured using one embodiment of the present invention will be described. I will explain this in more detail.

[0322] The display module 8000 shown in FIG. 17 includes an upper cover 8001 and a lower cover 8002. Between them, touch panel 8004 connected to FPC8003, A display panel 8006, a frame 8009, a printed circuit board 8010, and a battery 801 1.

[0323] A display device manufactured according to one embodiment of the present invention is used for a display panel 8006, for example. A display device manufactured according to one embodiment of the present invention can be used as a display panel 800, for example. By using the above-mentioned display device 6, it is possible to manufacture a high-definition display module 8000. This can improve the reliability of the display module.

[0324] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel The shape and dimensions can be changed as appropriate to match the size of 8006.

[0325] The touch panel 8004 is a resistive or capacitive touch panel. The touch panel 8004 is not provided, and the display panel 8006 is overlapped with the touch panel 8006. It is also possible to provide the display panel 8006 with a touch panel function.

[0326] The frame 8009 protects the display panel 8006 and also supports the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the The frame 8009 may function as a heat sink.

[0327] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. , this can be omitted when using a commercial power source.

[0328] In addition, the display module 8000 includes components such as a polarizing plate, a retardation plate, and a prism sheet. It may be added.

[0329] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0330] (Embodiment 6) In this embodiment, electronic devices to which the display device of one embodiment of the present invention can be applied will be described. .

[0331] The display device of one embodiment of the present invention can be used as a display portion of an electronic device. Therefore, electronic devices with high display quality can be realized. Alternatively, electronic devices with extremely high resolution can be realized. Alternatively, highly reliable electronic devices can be realized.

[0332] Examples of electronic devices include television sets, desktop or notebook computers, etc. Personal computers, computer monitors, digital cameras, digital videos Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live video games, pachinko machines, and other large game machines.

[0333] The electronic device or lighting device according to one embodiment of the present invention can be used for interior or exterior walls of a house or building, Or, it can be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0334] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by non-contact power transmission. It is preferable that the secondary battery can be charged.

[0335] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, and silver-zinc batteries. do.

[0336] The electronic device according to one embodiment of the present invention may include an antenna. By doing so, it is possible to display images and information on the display unit. And if a secondary battery is included, the antenna may be used for contactless power transmission.

[0337] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Numbers, distance, light, liquids, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared rays) It may have.

[0338] The electronic device according to one embodiment of the present invention can have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, running various software (programs) a function to read out a program or data recorded on a recording medium; It can have functions etc.

[0339] Furthermore, in an electronic device having a plurality of display units, one of the display units is used mainly for displaying image information. and another display unit that mainly displays text information, or multiple displays It can have a function for displaying a stereoscopic image by displaying an image taking into account parallax. Furthermore, in electronic devices having an image receiving unit, the function of taking still or moving images, The function of automatically or manually correcting the captured image, and the function of storing the captured image on a recording medium (external or electronic) It can have functions such as storing the captured image on a computer (built into the device) and displaying the captured image on the display unit. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be used. may have the following structure:

[0340] The display device of one embodiment of the present invention can display an extremely high-definition image. In particular, portable electronic devices, wearable electronic devices, and e-book terminals It can also be used in VR (Virtual Reality) devices and The present invention can also be suitably used in AR (Augmented Reality) devices.

[0341] 18(A) and (B) show an example of a mobile information terminal 800. The mobile information terminal 800 includes: The display device includes a housing 801, a housing 802, a display unit 803, a display unit 804, a hinge unit 805, and the like. .

[0342] The housing 801 and the housing 802 are connected by a hinge portion 805. 18(A) to the folded state, as shown in FIG. 18(B), the housing 801 The housing 802 can be opened.

[0343] For example, document information can be displayed on the display unit 803 and the display unit 804. The display unit 803 and the display unit 804 can also display still images. It is also possible to display video images.

[0344] In this way, the portable information terminal 800 can be folded when carried around, making it a versatile device. Excellent usability.

[0345] The housings 801 and 802 are provided with a power button, an operation button, an external connection port, a switch, and a It may also have a speaker, a microphone, etc.

[0346] An example of a portable information terminal is shown in FIG. 18(C). The portable information terminal 810 shown in FIG. , a housing 811, a display unit 812, an operation button 813, an external connection port 814, a speaker 81 5, a microphone 816, a camera 817, etc.

[0347] The display unit 812 is provided with a display device according to one embodiment of the present invention. By using the display device for the display portion 812, it is possible to take a picture even if the area of ​​the display portion 812 is small. It is possible to check the details of the image.

[0348] The mobile information terminal 810 has a touch sensor on the display unit 812. Any operation such as inputting characters can be performed by touching the display 812 with a finger or a stylus. This can be done.

[0349] In addition, the operation of the operation button 813 can be used to turn the power on and off, and to display information on the display unit 812. You can change the type of image displayed. For example, from the email composition screen, you can change the type of image displayed to the main You can switch to the new screen.

[0350] In addition, a detection device such as a gyro sensor or an acceleration sensor is installed inside the mobile information terminal 810. By providing the above, the orientation of the mobile information terminal 810 (portrait or landscape) can be determined and the image of the display unit 812 can be displayed. You can set the screen display orientation to automatically switch. You can also set the screen display orientation to The switching can be done by touching the display unit 812, operating the operation button 813, or using the microphone 816. This can also be done by voice input or the like.

[0351] The mobile information terminal 810 is, for example, one selected from a telephone, a notebook, an information viewing device, etc. Or it has multiple functions. Specifically, it can be used as a smartphone. The portable information terminal 810 can be used for, for example, mobile phone calls, e-mail, text browsing and creation, music playback, video It can run various applications such as image playback, Internet communication, and games. Cut.

[0352] FIG. 18D shows an example of a camera. The camera 820 includes a housing 821, a display unit 822, The camera 820 has an operation button 823, a shutter button 824, etc. A lens 826 is attached.

[0353] The display portion 822 includes the display device of one embodiment of the present invention.

[0354] Here, the camera 820 is a camera in which the lens 826 can be removed from the housing 821 and replaced. However, the lens 826 and the housing may be integrated together.

[0355] The camera 820 captures still or moving images by pressing the shutter button 824. The display unit 822 has a function as a touch panel. It is also possible to capture an image by touching 22.

[0356] The camera 820 can be equipped with a strobe device, viewfinder, etc. Alternatively, these may be incorporated into the housing 821.

[0357] FIG. 19A shows the appearance of a camera 840 with a viewfinder 850 attached. .

[0358] The camera 840 includes a housing 841, a display unit 842, operation buttons 843, and a shutter button 8 44, etc. Also, the camera 840 is equipped with a detachable lens 846. do.

[0359] Here, the camera 840 is a camera in which the lens 846 can be removed from the housing 841 and replaced. However, the lens 846 and the housing may be integrated together.

[0360] The camera 840 can capture an image by pressing the shutter button 844 . The display unit 842 also functions as a touch panel. It is also possible to capture an image by

[0361] The housing 841 of the camera 840 has a mount having electrodes, and a finder 850 as well. Or, a strobe device or the like can be connected.

[0362] The finder 850 includes a housing 851, a display unit 852, a button 853, and the like.

[0363] The housing 851 has a mount that engages with the mount of the camera 840, and a viewfinder The mount 850 can be attached to the camera 840. The mount also has electrodes. The image received from the camera 840 through the electrode can be displayed on the display unit 852. can.

[0364] The button 853 functions as a power button. The display of 2 can be switched on and off.

[0365] The display unit 842 of the camera 840 and the display unit 852 of the finder 850 are A display device manufactured according to one embodiment of the present invention can be used. By using the display units 842 and 852, even if the area of ​​the display units 842 and 852 is small, the captured image can be displayed clearly. It is possible to check the details of the image or captured picture.

[0366] In FIG. 19A, the camera 840 and the finder 850 are separate electronic devices. These are configured to be detachable, but the housing 841 of the camera 840 is provided with a display according to one embodiment of the present invention. A viewfinder with the device may be built in.

[0367] FIG. 19(B) shows the appearance of the head mounted display 860.

[0368] The head mounted display 860 includes a mounting part 861, a lens 862, a main body 863, and a surface The mounting portion 861 includes a display unit 864, a cable 865, and the like. is built in.

[0369] A cable 865 supplies power from a battery 866 to the main body 863. The device is equipped with a line receiver and the like, and can display image information such as received image data on the display unit 864. In addition, a camera installed in the main body 863 captures the movement of the user's eyeballs and eyelids, By calculating the coordinates of the user's viewpoint based on the information, the user's viewpoint is used as an input means. It can be used.

[0370] Furthermore, the mounting section 861 may be provided with a plurality of electrodes at positions that come into contact with the user. The main body 863 detects the current flowing through the electrodes in accordance with the movement of the user's eyeball, The device may have a function of recognizing the gaze of the user. In addition, the mounting part 861 may have a function of monitoring the pulse of the user. The device may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor. The display unit 864 may have a function to display biological information. etc., and the image displayed on the display unit 864 may be changed in accordance with that movement.

[0371] The display device of one embodiment of the present invention can be applied to the display portion 864. By using a display device manufactured using the above for the display portion 864, a realistic image can be displayed. It is possible.

[0372] 19(C) and (D) show the appearance of the head mounted display 870.

[0373] The head mounted display 870 includes a housing 871, two display units 872, and an operation button. 873 and a band-shaped fastener 874.

[0374] The head mounted display 870 has the same structure as the head mounted display 860. In addition to its functionality, it is equipped with two displays.

[0375] By having two displays 872, the user can see one display per eye. This allows high-resolution images to be displayed even when performing 3D display using parallax. The display unit 872 can display an image in an arc shape with the user's eye as the approximate center. This ensures that the distance from the user's eyes to the display surface is constant. In addition, the brightness and chromaticity of the light coming from the display can be seen more clearly. Even if the angle of the display changes, the display is used in the normal direction to the display surface. Since the subject's eyes are located at the same distance from the camera, the effect of the camera can be virtually ignored, resulting in a more realistic appearance. It is possible to display the image.

[0376] The operation button 873 has functions such as a power button. It may have a button.

[0377] Also, as shown in FIG. 19(E), a lens is provided between the display unit 872 and the position of the user's eyes. The lens 875 allows the user to magnify the display 872. This increases the sense of realism. The lens may have a dial 876 for varying the position of the lens for the joint.

[0378] The display device of one embodiment of the present invention can be applied to the display portion 872. Since the display device has extremely high definition, it is expanded using a lens 875 as shown in FIG. 19(E). Even if it is a big deal, the user will not see the pixels, and the image will look more realistic. It is possible.

[0379] 20(A) and (B) show an example in which one display unit 872 is provided. With such a configuration, the number of parts can be reduced.

[0380] The display unit 872 has two areas, one on the left and one on the right, each of which displays an image for the right eye and an image for the left eye. This allows the display of stereoscopic images using binocular parallax. This can be done.

[0381] Alternatively, a single image visible to both eyes may be displayed across the entire area of ​​the display unit 872. This makes it possible to display panoramic images across both ends of the field of view, The realization grows.

[0382] The above-mentioned lens 875 may also be provided. The display unit 872 displays two images side by side. Alternatively, one image may be displayed on the display unit 872 and viewed with both eyes through the lens 875. The same image may be displayed.

[0383] In addition, the display unit 872 does not have to be curved, and the display surface may be flat. For example, 20(C) and (D) show an example in which a single display unit 872 does not have a curved surface. is doing.

[0384] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. EXAMPLES

[0385] In this embodiment, an aluminum oxide film formed by sputtering or ALD is used. The film density of each will be explained.

[0386] <Sample S1 and Sample S2> A 500 nm thick aluminum oxide film is formed on a glass substrate using the sputtering method. The deposition conditions are shown in Table 1. Aluminum was used as the sputtering target. The sputtering gas is a mixed gas containing oxygen. An aluminum oxide film was formed.

[0387] [Table 1]

[0388] <Samples A1 to A3> Aluminum oxide films of 100 nm or 50 nm thickness were deposited on glass substrates using the ALD method. The thickness of the aluminum oxide film of sample A1 is 100 nm. The thickness of the aluminum oxide film of sample A3 is 50 nm. The cycle time is different from that of Sample A1, Sample A2, and Sample A3. The deposition time is different. The deposition conditions are shown in Table 2. One cycle is the same as the precursor and the oxidizing agent. The time it takes to replace each gas is the time it takes for the gas to be replaced. The longer the time per cycle, the higher the deposition chamber temperature. This can reduce the amount of unreacted precursor remaining in the reaction system.

[0389] [Table 2]

[0390] The film densities of the aluminum oxide films included in the samples S1, S2, and A1 to A3 The results of the measurement are shown in Table 3. Here, the TRXV-SMX manufactured by Technos Corporation was used. The film density was measured by X-ray reflectivity measurement. The interface layer in the above was removed.

[0391] [Table 3]

[0392] From Table 3, the aluminum oxide film formed using the ALD method has a yield of 10 ... By increasing the deposition time, impurities contained in the film can be reduced, which increases the film density. In addition, the sputtering method can be used to remove impurities from the film. It can reduce the amount of EXAMPLES

[0393] In this example, the quantitative values ​​of elements contained in the aluminum oxide film formed in Example 1 were The results of the measurements will now be explained.

[0394] Aluminum contained in the films of Sample S1, Sample S2, Sample A1, and Sample A2, The quantitative values ​​of oxygen and carbon were measured using X-ray photoelectron spectroscopy, and the measurement results are shown in Table 4. In the XPS of this embodiment, a PHI Quantera SXM was used as the measurement device, and Monochromatic AlKα radiation (1.486 keV) was used.

[0395] [Table 4]

[0396] From Table 4, it can be seen that the aluminum oxide film formed by the sputtering method has It was found that the aluminum oxide formed using the ALD method contains aluminum and oxygen. It was found that the aluminum film contains aluminum, oxygen, and a small amount of carbon. Trimethylaluminum is used as a precursor for forming the aluminum film. The carbon of the methyl group was not oxidized and remained in the aluminum oxide film, so carbon was not included. It is believed that this can be done.

[0397] In addition, from Table 4, it can be seen that the aluminum oxide film formed by the ALD method is Compared to the aluminum oxide film formed using the method, the ratio of oxygen atoms to aluminum is The numerical ratio (O / Al) was found to be large. The aluminum oxide film formed by the ALD method has a different composition from that formed by the conventional method. I found out it was different.

[0398] From this, it was found that the aluminum oxide film was formed by sputtering and the oxide film was formed by ALD. When a protective film is formed by laminating aluminum oxide films in order, the protective film is The upper layer of the aluminum oxide film contains more carbon than the upper layer of the aluminum oxide film. An aluminum oxide film is layered in sequence using the ALD method, followed by an aluminum oxide film. When a protective film is formed by applying the aluminum oxide to the aluminum oxide film on the bottom, the protective film is The aluminum film has a higher atomic ratio of oxygen to aluminum (O / Al). The ratio of aluminum to oxygen in the aluminum oxide film formed by the ion-spraying method is stoichiometric. It can be seen that the composition is close to that of Al2O3. EXAMPLES

[0399] In this example, the optical properties of an aluminum oxide film formed by sputtering are described. I will explain this in more detail.

[0400] First, the method of preparing the sample will be described. Here, the same conditions as those for sample S1 shown in Example 1 are used. That is, a 500 nm aluminum oxide film was formed by sputtering.

[0401] FIG. 21(A) shows the transmittance, reflectance, and absorptance of the sample. In FIG. 21(A), The horizontal axis indicates the wavelength, and the vertical axis indicates the transmittance, reflectance, and absorptance of light of each wavelength. The line indicates the reflectance, and the dotted line indicates the absorptance. As shown in FIG. 21(A), the transmittance of the sample is high. It is clear that...

[0402] For reference, a 70 nm thick film was formed on a glass substrate using the sputtering method. The optical properties of the ITO film are shown in FIG.

[0403] The transmittance of the aluminum oxide film shown in FIG. 21(A) is larger than that of the ITO film shown in FIG. 21(B). For this reason, aluminum oxide formed on the light-emitting element by sputtering is Even if the aluminum film is formed, it does not hinder the efficiency of extracting light emitted from the light emitting element. EXAMPLES

[0404] In this embodiment, the cross-sectional shape of the protective film is measured using a scanning transmission electron microscope (STEM). The specimens were observed using a 300 nm ion electron microscope.

[0405] First, a method for preparing the sample will be described.

[0406] As shown in FIG. 1(A) and FIG. 1(B), a first electrode 10 was formed on a substrate 40. In this example, a glass substrate was used as the substrate 40. The first electrode 10 was a 100 nm thick thin film. The electrode was formed by laminating a 95 nm thick Ag-Pd-Cu alloy film and a 95 nm thick ITO film.

[0407] Next, an insulating film 14 was formed on the first electrode 10. Here, the insulating film 14 was a thin film having a thickness of A polyimide film of 1000 nm was formed.

[0408] Next, an EL layer 16 having a thickness of 200 nm was formed on the first electrode 10 and the insulating film 14.

[0409] Next, the second electrode 18 was formed on the EL layer 16. It was formed by laminating a 15 nm thick Ag-Mg alloy film and a 70 nm thick ITO film.

[0410] Next, an insulating film 24 is formed on the second electrode 18, and an insulating film 26 is formed on the insulating film 24. Here, the insulating film 24 is a 300 nm thick aluminum oxide film formed by sputtering. After forming the aluminum film, a 50 nm thick aluminum oxide film is deposited as the insulating film 26 by the ALD method. A ZnO film was formed.

[0411] Next, a carbon film C and a platinum film Pt are deposited on the insulating film 26 as a protective film for STEM observation. A layer was formed.

[0412] The cross section of the sample was observed using a STEM, and the observation results are shown in Figure 22(A).

[0413] As a comparative example, a comparative sample was formed in which the insulating film 26 was not formed on the insulating film 24. In this example, the insulating film 24 is an aluminum oxide film having a thickness of 1000 nm, which is formed by sputtering. A mucous membrane was formed.

[0414] The cross section of the comparative sample was observed by STEM, and the observation results are shown in Figure 22(B).

[0415] 22(A) and (B) are STEM images. Thus, defect areas and low density areas are observed to have lower contrast than high density areas. As shown in FIG. 22(B), the insulating film 14 overlaps with a region of the insulating film 14 whose surface is inclined with respect to the substrate. Numerous linear low density areas were observed in the region of the velum 24 (indicated by the dashed square).

[0416] On the other hand, in FIG. 22A, an insulating film 26 is formed on the insulating film 24. Even if the insulating film 24 overlaps with a region of the insulating film 14 whose surface is inclined with respect to the substrate, the linear low-density No areas are observed.

[0417] As shown in FIG. 22, the ALD method was applied to the aluminum oxide film formed by the sputtering method. By laminating an aluminum oxide film using this method, the aluminum oxide film formed by the sputtering method can be It can be seen that the low density regions of the aluminum film are reduced. This is because the low density regions are formed by the ALD method. One of the reasons for this is thought to be that the aluminum oxide formed in EXAMPLES

[0418] In this example, in the aluminum oxide film included in the sample formed in Example 1, water vapor The results of evaluating the moisture permeability using an air permeability measuring device are explained below. The aluminum oxide film contained in the sample formed in Example 1 was formed and stored in a high-temperature, high-humidity atmosphere. The results of the test will be explained.

[0419] <Water vapor permeability> First, the sample preparation process will be described with reference to FIG.

[0420] As shown in FIG. 23(A), an EL layer 903 was formed on a glass substrate 901. Next, An insulating film 905 was formed on the L layer 903 by a sputtering method. An insulating film 907 was formed on the insulating film 905 by the ALD method. It functions as a protective film 908. The insulating film 907 and the film 911 are bonded together using an adhesive 909. It was fixed.

[0421] Next, as shown in FIG. 23(B), the EL layer 9 is cut using a sharp cutting tool such as a knife. 03, an insulating film 905, an insulating film 907, an adhesive 909, and a film 911 are cut. In FIG. 23(B), the dashed arrow indicates the cut.

[0422] Next, as shown in FIG. 23(C), the EL layer 903 and the glass substrate 901 were peeled off.

[0423] Next, as shown in FIG. 23(D), the EL layer 903 and the film 915 are bonded with an adhesive 913. It was fixed using.

[0424] The samples were prepared by the above steps.

[0425] Here, the aluminum oxide film of each sample shown in Example 1 was used as the protective film 908. The samples were prepared using the above method.

[0426] Next, the water vapor transmission rate of each sample was measured. Gas and water vapor transmission rate measurement was performed using a Super-Detect WG-7S. Each sample film 911 or film 915 was exposed to an atmosphere of 40°C and 90% humidity for several hours. At this time, the adhesive 913, the EL layer 903, the protective film 908, and the adhesive 909 were interposed therebetween. The rate at which moisture permeated from one of the films 911 and 915 to the other was measured. The higher the moisture blocking ability of the protective film 908, the lower the water vapor transmission rate.

[0427] Table 5 shows the composition of the protective film 908 in each sample and the water vapor transmission rate of each sample.

[0428] [Table 5]

[0429] From Table 5, it can be seen that samples M11 and M12 have lower water vapor permeability than sample S11. That is, the protective film 908 is made of aluminum oxide formed by sputtering. Rather than using a single layer of aluminum film, a sputtered aluminum oxide film and an A By laminating the aluminum oxide film formed by the LD method, the water vapor permeability is reduced. That is, it was found that the aluminum oxide film formed by the sputtering method The laminated film of the aluminum oxide film formed by the ALD method is used as a protective film for the light-emitting element. It was found that by doing so, it is possible to reduce the diffusion of moisture from the outside to the light-emitting element. .

[0430] <High temperature and humidity storage test> Next, the protective film 90 included in the sample S11, the sample M11, and the sample M12 was formed on the light-emitting element. 8 were formed, and thus samples S21, M21, and M22 were prepared. The configurations of the protective films of S21, M21, and M22 are shown in Table 6. The shape was a square with each side measuring 2 mm.

[0431] [Table 6]

[0432] Next, samples S21, M21, and M22 were stored in an atmosphere of 65°C and 95% humidity. The storage time of sample S21 was set to 0 hours, and the storage times of samples M21 and M22 were set to 50 hours. The time was set to 0 hours.

[0433] 24(A), (B), and (C) show the results of the storage test for sample S21 and sample S22, respectively. 13 is an optical microscope photograph of the light-emitting elements of sample M21 and sample M22 when they are emitting light. .

[0434] As shown in FIG. 24(A), the substrate was protected by a single layer of aluminum oxide film formed by sputtering. In the sample S21 on which the protective film 908 is formed, black spots are observed. On the other hand, in FIGS. As shown in (C), an aluminum oxide film formed by sputtering and a thin film formed by ALD are shown. The aluminum oxide film formed by laminating the aluminum oxide film formed by the above-mentioned method to form the protective film 908 was laminated to the sample M21. For the above reasons, it is possible to confirm that the light-emitting element is provided with a light-emitting element according to one embodiment of the present invention. It was found that the formation of a protective film makes it possible to prevent deterioration of the light-emitting element.

[0435] <Light Emitting Characteristics> Next, the luminescence characteristics of samples M21 and M22 were evaluated after a high-temperature and high-humidity storage test. 25 and 26 show the emission characteristics of samples M21 and M22, respectively. In FIG. 26, (A) shows the voltage-current characteristics of the light-emitting element before and after the storage test, and (B) shows the voltage-current characteristics of the light-emitting element after the storage test. 4 shows the luminance and current efficiency characteristics of the light-emitting element before and after the survival test.

[0436] From Figures 25 and 26, even after the storage test (500 hours), the initial state (0 hours) and It was found that similar optical properties were obtained. The protective film reduces the diffusion of moisture from the outside to the light emitting element, preventing the light emitting element from deteriorating. I found out that it wasn't. [Explanation of symbols]

[0437] 10 electrodes 12 electrodes 14 Insulating film 16 EL layer 18 electrodes 18a area 18b area 20 Light emitting element 22 Light emitting element 24 Insulating film 24_1 Insulating film 24a Low density area 24b area 26 Insulating Film 26_1 Insulating film 28 Protective film 28_1 Protective film 30 Colored film 32 Colored film 40 Substrate 42 Substrate 44 Adhesive 70 display area 75 pixel units 76 pixels 76B Display element 76G display element 76R Display element 77 pixels 77B Display element 77G Display element 77R Display element 79 light 111 Conductive film 111b Conductive film 111c Conductive film 112a Semiconductor film 112b Semiconductor film 113a Conductive film 113b Conductive film 113c conductive film 113d conductive film 121 Conductive Film 122 EL layer 122B EL layer 122G EL layer 122R EL layer 123 Conductive Film 125 Protective film 129 Light Diffuser 130 Capacitive element 132 Insulating film 133 Insulating Film 134 Insulating film 135 Insulating Film 136 Insulating Film 137 Insulating Film 138 Insulating Film 139 Insulating Film 140 Polarizing Plate 141 Carrier injection layer 141B Carrier injection layer 141G Carrier injection layer 141R Carrier injection layer 142 Carrier transport layer 142B Carrier transport layer 142G Carrier transport layer 142R Carrier transport layer 143B Light-emitting layer 143G Light-emitting layer 143R Light-emitting layer 144 Carrier Transport Layer 144B Carrier transport layer 144G Carrier transport layer 144R Carrier transport layer 145 Carrier injection layer 145B Carrier injection layer 145G Carrier injection layer 145R Carrier injection layer 151a Adhesive layer 152B Colored film 152G colored film 152R colored film 165 Insulating Film 167 Insulating Film 173a Alignment film 173b Alignment film 174 Colored film 175 Colored film 176 Light-shielding film 182 Adhesive 183 Adhesive 191 Conductive Film 192 EL layer 193a Conductive film 193b Conductive film 201 Transistor 204 Connection 205 Transistor 206 Transistor 207 Connection 209 areas 211 Insulating film 212 Insulating film 213 Insulating film 214 Insulating film 215 Insulating film 216 Insulating film 217 Insulating Film 220 Insulating film 221 Conductive Film 222 Conductive Film 223 Conductive Film 224 Conductive Film 228 Protective film 230 areas 231 Semiconductor Film 242 Connectors 243 Connectors 251 Aperture 252 Connection 300 display device 311 Electrode 311b Conductive film 312 Liquid crystal 313 Conductive Film 340 Liquid crystal element 360 Light emitting element 360b Light emitting element 360g Light emitting element 360r Light emitting element 360w light emitting element 366 Input Devices 370 Conductive Film 400 display device 410 pixels 451 Aperture 710 Display device 720a Display element 720b Display element 721B Display element 721G Display element 721R Display element 722B Display element 722G display element 722R Display element 731 Insulating Film 741a Transistor 741b Transistor 741c Transistor 741d Transistor 741e Transistor 741f Transistor 741g Transistor 741h Transistor 742a Transistor 742b Transistor 751a Board 751b board 752a Board 752b board 761a Display section 761b Display section 762a circuit section 763a FPC 764a IC 765a Wiring 800 Mobile Information Terminals 801 Case 802 Case 803 Display section 804 Display section 805 Hinge part 810 Mobile Information Terminal 811 Case 812 Display section 813 Operation button 814 External connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 Case 822 Display section 823 Operation button 824 Shutter button 826 Lens 840 Camera 841 Case 842 Display section 843 Operation button 844 Shutter button 846 Lens 850 Finder 851 Case 852 Display section 853 Button 860 Head Mounted Display 861 Mounting part 862 Lens 863 Main unit 864 Display section 865 Cable 866 Battery 870 Head Mounted Display 871 Case 872 Display section 873 Operation button 874 Fixtures 875 Lens 876 Dial 901 Glass Substrate 903 EL layer 905 Insulating film 907 Insulating film 908 Protective film 909 Adhesive 911 Film 913 Adhesive 915 Film 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. forming a light-emitting element having a first electrode, a light-emitting layer having a region disposed above the first electrode, and a second electrode overlapping the first electrode via the light-emitting layer; forming a first insulating film having one or more of aluminum oxide, hafnium oxide, and zirconium oxide above the second electrode by a sputtering method; forming a second insulating film having one or more of aluminum oxide, hafnium oxide, and zirconium oxide on the first insulating film by an ALD method; forming a third insulating film having one or more of aluminum oxide, hafnium oxide, and zirconium oxide on the second insulating film by a sputtering method; forming a fourth insulating film containing one or more of aluminum oxide, hafnium oxide, and zirconium oxide on the third insulating film by using an ALD method; A method for manufacturing a display device.

2. forming a light-emitting element having a first electrode, a light-emitting layer having a region disposed above the first electrode, and a second electrode overlapping the first electrode via the light-emitting layer; forming a first insulating film having one or more of aluminum oxide, hafnium oxide, and zirconium oxide above the second electrode by a sputtering method; forming a second insulating film having one or more of aluminum oxide, hafnium oxide, and zirconium oxide on the first insulating film by an ALD method; forming a third insulating film having one or more of aluminum oxide, hafnium oxide, and zirconium oxide on the second insulating film by a sputtering method; forming a fourth insulating film containing one or more of aluminum oxide, hafnium oxide, and zirconium oxide on the third insulating film by using an ALD method; the second insulating film has a higher carbon content than the first insulating film; the fourth insulating film has a higher carbon content than the third insulating film; A method for manufacturing a display device.

3. In claim 1 or 2, forming a colored film on the fourth insulating film; A method for manufacturing a display device.

Images