Light-emitting device and manufacturing method for the same

Abstract

To achieve a light-emitting device with reduced accuracy variation due to tolerance.SOLUTION: The light-emitting device includes a substrate having a top surface and a bottom surface, a first metal member provided on the top surface of the substrate, having a thickness in the vertical direction of 50 μm or more and 150 μm or less, a second metal member provided on the top surface of the substrate, having a thickness in the vertical direction the same as that of the first metal member, separated from the first metal member in a top view, surrounding the first metal member, a semiconductor laser element disposed on the first metal member, and a lid body joined to the substrate via the second metal metal.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] JP 2021-163950 A discloses an optical semiconductor package including a package substrate having a surface electrode and a metal layer, an optical semiconductor chip joined to the surface electrode, and a translucent lid joined to the metal layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-163950 Summary of the Invention [Problem to be solved by the invention]

[0004] An invention is disclosed that solves the problem of realizing a light emitting device with reduced precision variations due to tolerances that occur during the manufacture of the light emitting device.

[0005] Alternatively, instead of the above-mentioned problem, an invention is disclosed that solves the problem of realizing a light emitting device in which the stress applied to the package base is well balanced.

[0006] Alternatively, instead of the above-mentioned problems, an invention is disclosed that solves the problem of realizing a small-sized light-emitting device.

[0007] In addition, this specification also discloses an invention that solves two or more of the above-mentioned problems in a composite manner. [Means for solving the problem]

[0008] The light emitting device disclosed in the embodiment comprises a base having an upper surface and a lower surface, a first metal member provided on the upper surface of the base and having a vertical thickness of 50 μm or more and 150 μm or less, a second metal member provided on the upper surface of the base and having the same vertical thickness as the first metal member, being spaced apart from the first metal member in a top view and surrounding the first metal member, a semiconductor laser element disposed on the first metal member, and a lid body joined to the base via the second metal member.

[0009] A manufacturing method for a light emitting device disclosed in an embodiment includes the steps of preparing a base having an upper surface and a lower surface, providing a first metal member and a second metal member on the upper surface of the base by the same process, arranging a semiconductor laser element on the first metal member, and joining the base and a lid via the second metal member, wherein the first metal member and the second metal member have the same thickness in the vertical direction and are 50 μm or more and 150 μm or less, the first metal member and the second metal member are separated from each other when viewed from above, and the second metal member surrounds the first metal member.

[0010] In at least one of the one or more inventions disclosed in the embodiments, it is possible to realize a light emitting device in which precision variations due to tolerances are reduced. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a perspective view of the light emitting device according to the first embodiment. [Diagram 2] FIG. 2 is a top view of the light emitting device according to the first embodiment. [Diagram 3] FIG. 3 is a side view of the light emitting device according to each embodiment. [Figure 4] FIG. 4 is a cross-sectional view of the light emitting device according to each embodiment taken along the line IV-IV in FIGS. [Figure 5A] 5A is a cross-sectional view of the light emitting device according to the first embodiment taken along the VA-VA line in FIG. [Figure 5B]FIG. 5B is a partially enlarged view of FIG. 5A for explaining detailed structures of the upper metal member, the wiring portion, and the bonding pattern. [Figure 6] FIG. 6 is a perspective view showing components disposed inside the package of the light emitting device according to the first embodiment. [Figure 7] FIG. 7 is a top view showing components disposed inside the package of the light emitting device according to the first embodiment. [Figure 8] FIG. 8 is a bottom view of the package according to the first embodiment. [Figure 9] FIG. 9 is a cross-sectional view of the package according to each embodiment taken along the line IX-IX in FIGS. [Figure 10] FIG. 10 is a perspective view of the light emitting device according to the second embodiment. [Figure 11] FIG. 11 is a top view of the light emitting device according to the second embodiment. [Figure 12A] 12A is a cross-sectional view of the light emitting device according to the second embodiment taken along the line XIIA-XIIA in FIG. [Figure 12B] FIG. 12B is a partially enlarged view of FIG. 12A for illustrating detailed structures of the upper metal member, the wiring portion, and the bonding pattern. [Figure 13] FIG. 13 is a perspective view showing components disposed inside the package of the light emitting device according to the second embodiment. [Figure 14] FIG. 14 is a top view showing components disposed inside the package of the light emitting device according to the second embodiment. [Figure 15] FIG. 15 is a bottom view of the package according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] In this specification and claims, polygons such as triangles and quadrangles are referred to as polygons, including shapes in which the corners of the polygons have been processed by rounding, chamfering, removing corners, rounding, etc. Furthermore, shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle parts of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while leaving the polygon as the base are included in the interpretation of "polygon" described in this specification and claims.

[0013] This is not limited to polygons, but also applies to words expressing specific shapes such as trapezoids, circles, and irregular shapes. The same is true when dealing with each side that forms the shape. In other words, even if the corners or middle part of a side have been processed, the interpretation of "side" includes the processed part. Note that when distinguishing a "polygon" or "side" that has no processing from a processed shape, the word "strict" is added, for example, "strict quadrangle."

[0014] In addition, in this specification or the claims, descriptions such as up and down (upper / lower), left and right, front and back, front and back (front / rear), front and back, etc., merely describe relationships such as relative positions, orientations, and directions, and do not necessarily correspond to the relationships during use.

[0015] In addition, directions such as the X direction, the Y direction, and the Z direction may be indicated by using arrows in the drawings. The directions of these arrows are consistent among multiple drawings relating to the same embodiment. In addition, the direction of the arrows marked with X, Y, and Z in the drawings is the positive direction, and the opposite direction is the negative direction. For example, the direction marked with X at the tip of the arrow is the X direction and the positive direction. In this specification, the direction that is the X direction and the positive direction is referred to as the "positive X direction", and the opposite direction is referred to as the "negative X direction". When referring to the "X direction", it includes both the positive and negative directions. The same applies to the Y and Z directions.

[0016] In addition, in this specification, when an object is specified as "one or more" and the object is described, both the form in which the object is one and the form in which the object is multiple are described together. Thus, the description specifying "one or more" supports any of the following embodiments: an embodiment with one or more objects, an embodiment with at least one object, and an embodiment with multiple objects.

[0017] In addition, in this specification, the description of the "one or each" object is a description that combines a description of one object in an embodiment having one object, a description of one object in an embodiment having multiple objects, and a description of each of the objects in an embodiment having multiple objects. Therefore, the description of the "one or each" object supports all of the following: in an embodiment having one object, this one object has explanatory content; in an embodiment having multiple objects, at least one of these objects has explanatory content; in an embodiment having multiple objects, each of these multiple objects has explanatory content; and in an embodiment having one or multiple objects, all of the objects have explanatory content.

[0018] Furthermore, in this specification, the terms "component" and "part" may be used when explaining components, for example. A "component" refers to an object that is physically handled as a single unit. An object that is physically handled as a single unit can also be said to be an object that is handled as a single part in the manufacturing process. On the other hand, a "part" refers to an object that does not need to be physically handled as a single unit. For example, a "part" is used when referring to a portion of a single component, or when referring to multiple components collectively as a single object.

[0019] The distinction between "component" and "part" above does not indicate any intention to consciously limit the scope of the right in the interpretation of the doctrine of equivalents. In other words, even if there is a component described as a "component" in the scope of the patent claim, this does not mean that the applicant recognizes that treating this component as a single physical unit is essential for the application of the present invention.

[0020] In addition, in this specification or claims, when there are multiple elements of a certain type and each element needs to be expressed separately, the elements may be distinguished by adding "first" or "second" to the beginning of the element. In addition, the objects to be distinguished may differ between this specification and the claims. Therefore, even if the claims describe an element with the same notation as this specification, the object identified by this element may not be the same between this specification and the claims.

[0021] For example, if there are elements in this specification that are distinguished by the notation "first," "second," and "third," and the elements to which "first" and "third" are attached in this specification are described in the claims, the elements may be distinguished by the notation "first" and "second" in the claims from the viewpoint of readability. In this case, the elements to which "first" and "second" are attached in the claims refer to the elements to which "first" and "third" are attached in this specification, respectively. Note that this rule is not limited to elements, and can be applied rationally and flexibly to other objects as well.

[0022] Hereinafter, the embodiment for carrying out the present invention will be described. Furthermore, a specific embodiment for carrying out the present invention will be described with reference to the drawings. Note that the embodiment for carrying out the present invention is not limited to this specific embodiment. In other words, the illustrated embodiment is not the only embodiment in which the present invention can be realized. Note that the size and positional relationship of the members shown in each drawing may be exaggerated for ease of understanding.

[0023] First Embodiment A light emitting device 1 according to a first embodiment will be described. FIGS. 1 to 9 are diagrams for explaining an exemplary embodiment of the light emitting device 1. FIG. 1 is a perspective view of the light emitting device 1. FIG. 2 is a top view of the light emitting device 1. FIG. 3 is a side view of the light emitting device 1. FIG. 4 is a cross-sectional view of the light emitting device 1 taken along the IV-IV cross-sectional line in FIG. 2. FIG. 5A is a cross-sectional view of the light emitting device 1 taken along the VA-VA cross-sectional line in FIG. 2. FIG. 5B is a partially enlarged view of FIG. 5A for explaining detailed structures of the upper metal member 15, the wiring portion 12A, and the bonding pattern 13A. FIG. 6 is a perspective view showing components disposed inside the package 10 of the light emitting device 1. FIG. 7 is a top view showing components disposed inside the package 10 of the light emitting device 1. FIG. 8 is a bottom view of the package 10. FIG. 9 is a cross-sectional view of the package 10 taken along the IX-IX cross-sectional line in FIG. 8.

[0024] The light emitting device 1 includes a plurality of components. The plurality of components include a package 10, one or more semiconductor laser elements 20, one or more reflective members 40, and one or more wirings 60.

[0025] The light emitting device 1 may include other components. For example, the light emitting device 1 may include a semiconductor laser element in addition to the one or more semiconductor laser elements 20. The light emitting device 1 may not include some of the components listed here.

[0026] First, each component will be described.

[0027] (Package 10) The package 10 includes a base 11 and a lid 14. The package 10 includes one or more upper metal members 15. The package 10 includes one or more lower metal members 16. The lid 14 is joined to the base 11 to form the package 10. An internal space is defined in the package 10 in which other components are disposed. This internal space is a closed space surrounded by the base 11 and the lid 14. In addition, this internal space can be a space that is sealed in a vacuum or airtight state.

[0028] When viewed from above, the outer edge shape of the package 10 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the illustrated package 10, the long side direction of this rectangle is the same as the X direction, and the short side direction is the same as the Y direction. Note that when viewed from above, the outer edge shape of the package 10 does not have to be rectangular.

[0029] In the package 10, an internal space is formed in which other components are disposed. The top surface 11A of the package 10 is a part of the area that defines the internal space. In addition, each of the inner side surfaces 14E and the first bottom surface 14B of the package 10 is also a part of the area that defines the internal space.

[0030] The base 11 has an upper surface 11A and a lower surface 11B. The base 11 also has one or more side surfaces 11C. The base 11 is configured in a rectangular parallelepiped flat plate shape. The shape of the base 11 does not have to be a rectangular parallelepiped.

[0031] The or each upper metal member 15 has an upper surface 15A and a lower surface 15B. The or each upper metal member 15 is provided on the upper surface 11A of the base 11. The or each upper metal member 15 includes a first metal member 151 and a second metal member 152.

[0032] The or each upper metal member 15 has a thickness in the vertical direction of 50 μm or more and 150 μm or less. The first metal member 151 and the second metal member 152 have the same thickness in the vertical direction. Note that "same" here includes a difference of ±5 μm or less.

[0033] The first metal member 151 and the second metal member 152 are spaced apart from each other in a top view. The second metal member 152 surrounds the first metal member 151 in a top view. The second metal member 152 is provided near the outer edge of the upper surface 11A of the base 11 in a top view.

[0034] The shape of the second metal member 152 in top view is a rectangular ring. The shape of the second metal member 152 in top view is a shape surrounded by two rectangles of different sizes. The two rectangles overlap at their centers, and the difference between the widths in the long side direction and the widths in the short side direction are equal. The minimum width of the second metal member 152 in top view is 200 μm or more and 400 μm or less.

[0035] The base 11 has one or more wiring portions 12A. The one or more wiring portions 12A include a first wiring portion 12A1 and a second wiring portion 12A2. The first wiring portion 12A1 and the second wiring portion 12A2 are spaced apart from each other in a top view.

[0036] The first wiring portion 12A1 is provided on the upper surface 11A of the package 10. The second wiring portion 12A2 is provided on the upper surface 11A of the package 10. The first wiring portion 12A1 and the second wiring portion 12A2 are each electrically connected to a conductive member disposed in a through hole provided in the base 11.

[0037] The or each wiring portion 12A has a vertical thickness of 0.2 μm or more and 5 μm or less. The or each wiring portion 12A has a vertical thickness smaller than the vertical thickness of the upper metal member 15. The or each wiring portion 12A has a vertical thickness sufficiently smaller than the vertical thickness of the upper metal member 15, and is 0.1 times or less the vertical thickness of the upper metal member 15. Since it is sufficient for the wiring portion 12A to be electrically connected to the conductive member, it can be formed without needing to be as thick as the upper metal member 15.

[0038] The first wiring portion 12A1 is separated from the second metal member 152 in a top view. The first metal member 151 is provided on the first wiring portion 12A1. The first wiring portion 12A1 has a portion overlapping the first metal member 151 in a top view (hereinafter, referred to as a first portion 12A11 of the first wiring portion 12A1) and a portion not overlapping the first metal member 151 (hereinafter, referred to as a second portion 12A12 of the first wiring portion 12A1). In the second portion 12A12 of the first wiring portion 12A1, the first wiring portion 12A1 is connected to a conductive member disposed in a through hole of the base 11. That is, in this portion, the first wiring portion 12A1 and the conductive member overlap in a top view. A bonding layer 12B is provided on the first portion 12A11 of the first wiring portion 12A1.

[0039] The second wiring portion 12A2 is separated from the first metal member 151 in a top view. The second wiring portion 12A2 is separated from the second metal member 152 in a top view. The second wiring portion 12A2 is located inside the second metal member 152 in a top view. The second wiring portion 12A2 is connected to a conductive member disposed in a through hole of the base 11. This through hole is different from the through hole in which the conductive member connected to the first wiring portion 12A1 is provided.

[0040] The base 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the upper surface 11A. The bonding pattern 13A is provided in a ring shape. The bonding pattern 13A is provided in a rectangular ring shape. When viewed from above, the bonding pattern 13A is provided near the outer edge of the upper surface 11A.

[0041] The junction pattern 13A includes a first junction pattern 13A1 and a second junction pattern 13A2. The second junction pattern 13A2 is provided on the first junction pattern 13A1.

[0042] In top view, the shape of the first junction pattern 13A1 is the same as or encompasses the second metal member 152. The first junction pattern 13A1 is provided on the second metal member 152. In top view, the second junction pattern 13A2 is encompassed by the first junction pattern 13A1. The shape of the second junction pattern 13A2 is smaller than the second metal member 152.

[0043] The thickness of the first junction pattern 13A1 in the vertical direction is less than twice the thickness of the first wiring portion 12A1 in the vertical direction, which makes it possible to reduce the difference in height when the first junction pattern 13A1 is provided compared to when the first junction pattern 13A1 is not provided.

[0044] The thickness of the first junction pattern 13A1 in the vertical direction is the same as the thickness of the first wiring portion 12A1 in the vertical direction, where "same" includes a difference of within ±2 μm.

[0045] The or each lower metal member 16 has an upper surface 16A and a lower surface 16B. The or each lower metal member 16 is provided on the lower surface 11B of the base 11. The or each lower metal member 16 has a thickness in the vertical direction of 50 μm or more and 150 μm or less.

[0046] The difference between the vertical thickness of the lower metal member 16 and the vertical thickness of the upper metal member 15 is 0 to 50 μm. By not allowing the thicknesses of the upper metal member 15 and the lower metal member 16 to differ significantly, the stress applied to the base 11 can be balanced. For example, the vertical thickness of the lower metal member 16 is the same as the vertical thickness of the upper metal member 15. Note that "same" here includes a difference of ±5 μm or less.

[0047] The one or more lower metal members 16 include a lower metal member 16 that overlaps part or all of the first metal member 151 in top view. The one or more lower metal members 16 include a lower metal member 16 that overlaps at least a part of the second metal member 152 in top view. Looking at the one or more lower metal members 16 as a whole, it can be said that the one or more lower metal members 16 have a portion that overlaps with the first metal member 151 and a portion that overlaps with the second metal member 152 in top view.

[0048] The lower metal member 16 overlapping with the first metal member 151 in top view and the lower metal member 16 overlapping with the second metal member 152 may be the same lower metal member 16 or different lower metal members 16. The one or more lower metal members 16 may include a lower metal member 16 that overlaps with part or all of the first metal member 151 and at least a part of the second metal member 152 in top view.

[0049] The one or more lower metal members 16 include a lower metal member 16 that is electrically connected to the first wiring portion 12A1 via a conductive member provided in a through hole of the base 11. The lower metal member 16 is electrically connected to the first metal member 151.

[0050] The one or more lower metal members 16 include a lower metal member 16 electrically connected to the second wiring portion 12A2 via a conductive member provided in a through hole of the base 11. The one or more lower metal members 16 include a lower metal member 16 electrically connected to the first wiring portion 12A1, and a lower metal member 16 electrically connected to the second wiring portion 12A2.

[0051] In top view, the area of ​​the second metal member 152 that overlaps with one or more lower metal members 16 is larger than the area of ​​the region that does not overlap with one or more lower metal members 16. By providing one or more lower metal members 16 in this manner, it is possible to balance the stress with the second metal member 152.

[0052] The one or more lower metal members 16 do not include a lower metal member 16 that is electrically connected to the second metal member 152. The one or more lower metal members 16 do not include a lower metal member 16 that has a rectangular ring shape when viewed from below.

[0053] The base 11 can be formed, for example, using ceramic as the main material. Examples of the ceramic that is the main material of the base 11 include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0054] Here, the main material refers to the material that occupies the largest proportion of the mass or volume of the target structure. Note that when the target structure is formed from one material, that material is the main material. In other words, when a material is the main material, it includes the possibility that the proportion of that material can be 100%.

[0055] The wiring portion 12A and the first bonding pattern 13A1 can be formed, for example, using a metal material as the main material. Examples of the metal material that is the main material of the wiring portion 12A and the first bonding pattern 13A1 include simple metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring portion 12A and the first bonding pattern 13A1 can each be composed of, for example, one or more metal layers.

[0056] The bonding layer 12B and the second bonding pattern 13A2 can be formed, for example, using a metal material as the main material. Examples of the metal material that is the main material of the bonding layer 12B and the second bonding pattern 13A2 include simple metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding layer 12B and the second bonding pattern 13A2 can be composed of, for example, one or more metal layers.

[0057] The cover 14 has an upper surface 14A and a first lower surface 14B. The cover 14 has a second lower surface 14C. The cover 14 has one or more outer surfaces 14D. The cover 14 has one or more inner surfaces 14E. The one or more outer surfaces 14D intersect with the upper surface 14A. The one or more outer surfaces 14D intersect with the second lower surface 14C. The one or more inner surfaces 14E intersect with the first lower surface 14B. The one or more inner surfaces 14E intersect with the second lower surface 14C.

[0058] When viewed from above, the outer edge shape of the lid 14 is rectangular. When viewed from above, the outer edge shape of the lid 14 is the outer edge shape of the package 10. When viewed from above, the outer edge shape of the top surface 14A is rectangular. This rectangle can be a rectangle having long sides and short sides. The long side direction of the top surface 14A and the long side direction of the outer edge shape of the lid 14 are parallel. Note that when viewed from above, the outer edge shape of the top surface 14A does not have to be rectangular.

[0059] In a bottom view, the first lower surface 14B is surrounded by the second lower surface 14C. The second lower surface 14C is an annular surface surrounding the first lower surface 14B in a bottom view. The second lower surface 14C is a rectangular annular surface. Here, the frame defined by the inner edge of the second lower surface 14C is referred to as the inner frame of the second lower surface 14C, and the frame defined by the outer edge of the second lower surface 14C is referred to as the outer frame of the second lower surface 14C.

[0060] The cover 14 has a recess surrounded by a frame by the second lower surface 14C. The recess defines a portion of the cover 14 that is recessed above the second lower surface 14C. The first lower surface 14B is a part of the recess. The one or more inner surfaces 14E are a part of the recess. The first lower surface 14B is located above the second lower surface 14C.

[0061] The lid body 14 has a lid portion 14M and a frame portion 14N. The lid portion 14M and the frame portion 14N may be made of different materials. The lid body 14 may be configured to include a lid member corresponding to the lid portion 14M and a frame member corresponding to the frame portion 14N.

[0062] The lid portion 14M includes an upper surface 14A. The lid portion 14M includes a first lower surface 14B. The frame portion 14N includes a second lower surface 14C. The frame portion 14N includes one or more outer surfaces 14D and one or more inner surfaces 14E.

[0063] The lid 14 is bonded to the base 11. The lid 14 is bonded to the base 11 via the second metal member 152. The second lower surface 14C of the lid 14 is bonded to the upper surface 11A of the base 11. The lid 14 is bonded to the base 11 via the bonding pattern 13A and the second metal member 152. The lid 14 is bonded to the second metal member 152 via an adhesive.

[0064] By joining lid 14 to base 11 via second metal member 152, it is possible to precisely align the height of the joining surface of base 11 (top surface 15A of second metal member 152) that joins with lid 14 and the height of top surface 15A of first metal member 151. As a result, the distance from top surface 15A of first metal member 151 to top surface 14A of package 10 is less susceptible to the member tolerance of upper metal member 15, reducing precision variations.

[0065] The lid body 14 has a translucency that transmits light. Here, translucency means that the transmittance of light incident on the lid body 14 is 80% or more. The lid body 14 may have a non-translucent region (a region that does not have translucency) in part.

[0066] The lid body 14 can be formed, for example, using glass as a main material. The lid body 14 may be formed using a lid member and a frame member formed using different main materials. The lid member can be formed, for example, using a light-transmitting material such as glass or sapphire as a main material. The frame member can be formed, for example, using glass or ceramic as a main material. Examples of ceramics that are the main material of the frame member include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0067] The width of package 10 in the X direction may be 2 mm or more and 4 mm or less. The width of package 10 in the Y direction may be 1.3 mm or more and 3 mm or less. The width of package 10 in the Z direction may be 1 mm or more and 3 mm or less. The width of base 11 in the Z direction may be 0.2 mm or more and 1 mm or less. The width of lid 14 in the Z direction may be 0.6 mm or more and 2 mm or less. In the illustrated light emitting device 1, the width in the Z direction is the same as the width in the up-down direction.

[0068] The vertical thickness of upper metal member 15 can be 0.15 to 0.5 times the vertical thickness of base 11. Moreover, the vertical thickness of upper metal member 15 is preferably 0.2 to 0.5 times the vertical thickness of base 11, and 50 μm to 100 μm. By making upper metal member 15 50 μm or more, the height from top surface 11A to top surface 15A can be ensured. Furthermore, by making the ratio of these thicknesses 0.5 or less, the height of package 10 can be reduced.

[0069] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. The outer shape of the semiconductor laser element 20 in top view is a rectangle having long sides and short sides. Note that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 in top view are not limited to this.

[0070] The semiconductor laser element 20 has a light emitting surface 22 that emits light. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with a short side of the top surface 21A. Alternatively, for example, the top surface 21A can serve as the light emitting surface 22.

[0071] A single-emitter semiconductor laser element having one emitter can be used as the semiconductor laser element 20. Also, a multi-emitter semiconductor laser element having multiple emitters can be used as the semiconductor laser element 20.

[0072] For example, a semiconductor laser element that emits blue light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits green light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits red light can be used as the semiconductor laser element 20. Note that the semiconductor laser element 20 may also employ a semiconductor laser element that emits light of other colors or wavelengths.

[0073] Here, blue light refers to light whose emission peak wavelength is in the range of 420nm to 494nm, green light refers to light whose emission peak wavelength is in the range of 495nm to 570nm, and red light refers to light whose emission peak wavelength is in the range of 605nm to 750nm.

[0074] The semiconductor laser element 20 emitting blue light or the semiconductor laser element 20 emitting green light may be a semiconductor laser element containing a nitride semiconductor. As the nitride semiconductor, for example, a GaN-based semiconductor such as GaN, InGaN, or AlGaN may be used. As the semiconductor laser element 20 emitting red light, a semiconductor laser element containing an InAlGaP-based, GaInP-based, or GaAs-based semiconductor such as GaAs or AlGaAs may be used.

[0075] The semiconductor laser element 20 emits directional laser light. Diverging light having a spread is emitted from a light emitting surface 22 (emitting end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. The FFP refers to the shape and light intensity distribution of the emitted light at a position away from the light emitting surface of the semiconductor laser element.

[0076] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. Also, in the light intensity distribution of the FFP, the peak intensity value is 1 / e 2 The light having an intensity equal to or greater than this will be referred to as the main portion of the light.

[0077] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an ellipse in which the stacking direction is longer than the direction perpendicular to the stacking direction on a plane parallel to the light emission surface 22. The stacking direction is the direction in which multiple semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the in-plane direction of the semiconductor layers. The long axis direction of the elliptical shape of the FFP can also be called the fast axis direction of the semiconductor laser element 20, and the short axis direction can also be called the slow axis direction of the semiconductor laser element 20.

[0078] Based on the light intensity distribution of FFP, the peak light intensity is 1 / e 2 The angle at which the light with the peak light intensity spreads is defined as the light spread angle of the semiconductor laser element 20. Here, the light spread angle is the angle between the light with the peak light intensity (light passing through the optical axis) and the light with the peak light intensity of 1 / e 2 The spread angle of light is expressed as the angle between the light with a peak light intensity of 1 / e 2 In addition to the light intensity at half the peak light intensity, the light intensity may also be calculated from the light intensity at half the peak light intensity. 2 This refers to the spread angle of light at a light intensity of

[0079] The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be 15 degrees or more and less than 90 degrees. The divergence angle of this light in the slow axis direction can be more than 0 degrees and less than 8 degrees. The divergence angle of this light in the fast axis direction is larger than the divergence angle in the slow axis direction.

[0080] (Reflective member 40) The reflecting member 40 has a lower surface 41A and a light reflecting surface 41B that reflects light. The light reflecting surface 41B is inclined with respect to the lower surface 41A. A straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined with respect to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0081] The light reflecting surface 41B is a flat surface. The light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. The inclination angle of the light reflecting surface 41B does not have to be 45 degrees.

[0082] The main material of the reflective member 40 may be glass, metal, or the like. It is preferable to use a heat-resistant material as the main material of the reflective member 40. The main material may be, for example, glass such as quartz or BK7 (borosilicate glass), or metal such as Al. The reflective member 40 may also be formed using Si as the main material.

[0083] If the main material is a reflective material such as Al, the light reflecting surface 41B can be formed from the main material. Instead of forming the light reflecting surface 41B from the main material, the general shape of the reflecting member 40 may be formed from the main material, and the light reflecting surface 41B may be formed on the surface of the general shape. In this case, the light reflecting surface 41B can be formed using, for example, a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2.

[0084] The light reflecting surface 41B has a reflectance of 90% or more for the peak wavelength of light irradiated onto the light reflecting surface 41B. This reflectance may be 95% or more. This reflectance can also be 99% or more. The light reflectance is 100% or less or less than 100%.

[0085] (Wiring 60) The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends become joints with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. Examples of metals that can be used include gold, aluminum, silver, and copper.

[0086] Next, the light emitting device 1 will be described.

[0087] (Light emitting device 1) In the light emitting device 1, the or each semiconductor laser element 20 is disposed in the internal space of the package 10. The or each semiconductor laser element 20 is disposed on the upper surface 11A of the base 11. The or each semiconductor laser element 20 is disposed on a first metal member 151. The semiconductor laser element 20 is bonded to the first metal member 151 via an adhesive.

[0088] By disposing the semiconductor laser element 20 on the first metal member 151, the distance from the semiconductor laser element 20 to the upper surface 14A of the package 10 is less affected by the material tolerance of the upper metal member 15, and precision variations are reduced.

[0089] By disposing the first metal member 151 in the first portion of the first wiring portion 12A1 and not disposing it in the second portion of the first wiring portion 12A1, the first metal member 151 can be mounted on the upper surface 11A of the base 11 without being affected by the conductive member provided in the through hole of the base 11. Since the conductive member may protrude slightly above the upper surface 11A of the base 11 to ensure electrical connection, the mounting accuracy of the first metal member 151 is improved by not being affected by the conductive member. Alternatively, even if the degree of protrusion of the conductive member from the upper surface 11A of the base 11 varies due to the member tolerance of the conductive member, it is possible to avoid variation in the mounting accuracy of the first metal member 151 due to this.

[0090] The semiconductor laser element 20 is disposed so that the long side direction of the upper surface 21A is parallel to the long side direction of the package 10. By disposing it in this manner, the light emitting device 1 can be made more compact.

[0091] The or each semiconductor laser element 20 emits light laterally from side surface 21C, which is light emission surface 22. Light traveling in a first direction is emitted from the or each semiconductor laser element 20. In the illustrated light emitting device 1, the first direction is the same as the X direction. The optical axis of light emitted from the or each semiconductor laser element 20 is the same as the X direction. Note that the semiconductor laser element 20 may have a light emission surface 22 on an upper surface 21A and emit light upward from the upper surface 21A.

[0092] In the light emitting device 1, one or each reflective member 40 is disposed in the internal space of the package 10. The one or each reflective member 40 is disposed on the upper surface 11A of the base 11. The one or each reflective member 40 reflects light emitted from the semiconductor laser element 20. The reflective member 40 is disposed at a position away from the semiconductor laser element 20 in the first direction.

[0093] Light traveling in the first direction from the semiconductor laser element 20 is reflected by the reflecting member 40. The reflecting member 40 receives and reflects the light emitted laterally from the semiconductor laser element 20 upward by the light reflecting surface 41B.

[0094] In order to allow the light emitted from the semiconductor laser element 20 to be irradiated onto the light reflecting surface 41B, the lower surface 21B of the semiconductor laser element 20 is disposed at a position higher than the lower surface 41A of the reflecting member 40. Since the first metal member 151 has a thickness of 50 μm or more, divergent light having a spread can be effectively irradiated onto the light reflecting surface 41B.

[0095] When the vertical distance from the upper surface 11A of the base 11 to the lower end of the light reflecting surface 41B is 0 or more and 8 μm or less, by making the thickness of the first metal member 151 70 μm or more and 130 μm or less, it is possible to irradiate the main part of the light to the light reflecting surface 41B and to realize a small light emitting device.

[0096] An upper surface 15A of the first metal member 151 is located above the lower end of the light reflecting surface 41B of the reflecting member 40. An upper surface 15A of the second metal member 152 is located above the lower end of the light reflecting surface 41B of the reflecting member 40. The vertical thickness of the second metal member 152 is greater than the vertical distance from the lower surface 41A of the reflecting member 40 to the lower end of the light reflecting surface 41B.

[0097] When the second metal member 152 is provided for joining the base 11 and the cover 14, the thickness of the second metal member 152 does not need to be greater than the vertical distance from the lower surface 41A of the reflecting member 40 to the lower end of the light reflecting surface 41B, and making it thinner is less costly. Furthermore, not providing the second metal member 152 reduces the vertical width of the package 10, which also contributes to the miniaturization of the light emitting device. On the other hand, the light emitting device 1 in which the second metal member 152 of the same thickness as the first metal member 151 is provided on the base 11 can suppress the variation in precision due to the tolerance of the upper metal member 15.

[0098] In the light emitting device 1, one or more wirings 60 are provided to electrically connect one or more semiconductor laser elements 20 to the package 10. The or each wiring 60 electrically connects one or more semiconductor laser elements 20 and the base 11.

[0099] The one or more wirings 60 include a wiring 60 having one end bonded to the upper surface 21A of the semiconductor laser element 20 and the other end bonded to the wiring portion 12A. The one or more wirings 60 include a wiring 60 bonded to the second wiring portion 12A2. A plurality of wirings 60 can be bonded to the upper surface 21A of one semiconductor laser element 20.

[0100] The light emitting device 1 can be manufactured by a manufacturing method including the steps of preparing a base 11, providing an upper metal member 15 on the upper surface of the base 11, arranging a semiconductor laser element 20 on the base 11, and joining a lid 14 to the base 11.

[0101] In the process of providing upper metal member 15 on the upper surface of base 11, first metal member 151 and second metal member 152 are provided by the same process on upper surface 11A of base 11. This makes it possible to reduce precision variations due to tolerances that occur in the manufacture of light emitting devices.

[0102] For example, by forming the first metal member 151 and the second metal member 152 together by plating, the first metal member 151 and the second metal member 152 can be formed with uniform thickness. Even if a tolerance occurs in the upper metal member 15 between different light emitting devices 1, this does not affect the thickness of the first metal member 151 and the second metal member 152 in one light emitting device 1.

[0103] Note that "the same process" here does not necessarily mean simultaneity or spatial continuity in the strict sense. As described above, if the same technology is used and a suitable method is adopted for forming the first metal member 151 and the second metal member 152 to a uniform thickness, then the first metal member 151 and the second metal member 152 can be considered to have been formed collectively by the same process.

[0104] The manufacturing method of the light emitting device 1 may further include a step of providing the wiring portion 12A and the first junction pattern 13A1 on the upper surface of the base 11. By providing the first wiring portion 12A1 and the first junction pattern 13A1 by the same process, the thicknesses of the first wiring portion 12A1 and the first junction pattern 13A1 can be made uniform. The "same process" here can be understood in the same way as the "same process" described above.

[0105] The method for manufacturing the light emitting device 1 may further include a step of providing a lower metal member 16 on the lower surface of the base 11. The lower metal member 16 can be formed by a process similar to the process for providing the upper metal member 15.

[0106] In the step of disposing the semiconductor laser element 20 on the base 11, the semiconductor laser element 20 is disposed on the first metal member 151. In this step, an adhesive is used to bond the lower surface 21B of the semiconductor laser element 20 to the upper surface 15A of the first metal member 151. The adhesive may be, for example, AuSn solder.

[0107] In the step of bonding the lid 14 to the base 11, the base 11 and the lid 14 are bonded via the second metal member 152. In this step, an adhesive is used to bond the second lower surface 14C of the lid 14 and the upper surface 15A of the second metal member 152. The adhesive may be, for example, AuSn solder.

[0108] The adhesive used in the step of placing the semiconductor laser element 20 on the base 11 and the adhesive used in the step of bonding the lid 14 to the base 11 are the same adhesive. By using the same adhesive, it is possible to prevent a large difference in the thickness of the adhesive cured in each of the two steps. This makes it possible to reduce the variation in the thickness of the adhesive that occurs during the manufacture of the light-emitting device.

[0109] <Second embodiment> A light emitting device 2 according to a second embodiment will be described. FIGS. 3, 4, 9 to 15 are diagrams for explaining an exemplary embodiment of the light emitting device 2. FIG. 3 is a side view of the light emitting device 2. FIG. 4 is a cross-sectional view of the light emitting device 2 taken along the IV-IV cross-sectional line in FIG. 11. FIG. 9 is a cross-sectional view of the package 10A taken along the IX-IX cross-sectional line in FIG. 15. FIG. 10 is a perspective view of the light emitting device 2. FIG. 11 is a top view of the light emitting device 2. FIG. 12A is a cross-sectional view of the light emitting device 2 taken along the XIIA-XIIA cross-sectional line in FIG. 11. FIG. 12B is a partially enlarged view of FIG. 12A for explaining detailed structures of the upper metal member 15, the wiring portion 12A, and the bonding pattern 13A. FIG. 13 is a perspective view showing components arranged inside the package 10A of the light emitting device 2. FIG. 14 is a top view showing components arranged inside the package 10A of the light emitting device 2. FIG. 15 is a bottom view of the package 10A.

[0110] Of the above-mentioned description of the light emitting device 1 and each of its components according to the first embodiment, all contents except for those that may be considered to be inconsistent with the drawings of the light emitting device 2 in Figures 3, 4, and 9 to 15 are also applicable to the description of the light emitting device 2. In order to avoid repetition, all non-inconsistent contents will not be described again here.

[0111] The light emitting device 2 includes a package 10A, one or more semiconductor laser elements 20, one or more reflecting members 40, and a plurality of wirings 60. All of the above-mentioned descriptions of the package 10 of the first embodiment, except for the descriptions of the light emitting device 2 in Figures 3, 4, and 9 to 15 that may be considered to be inconsistent with the package 10A, also apply to the package 10A. All of the descriptions that are not inconsistent will not be repeated here to avoid redundancy.

[0112] (Package 10A) In the package 10 of the light emitting device 1, the second wiring portion 12A2 and the second metal member 152 are spaced apart from each other when viewed from above and provided on the upper surface 11A of the base 11, but in the package 10A, the second wiring portion 12A3 and the second metal member 152 are provided connected to each other.

[0113] The second wiring portion 12A3 is separated from the first metal member 151 in a top view. The second wiring portion 12A3 may be provided on the second metal member 152. The second wiring portion 12A3 has a portion that overlaps with the second metal member 152 in a top view (hereinafter referred to as a first portion of the second wiring portion 12A3) and a portion that does not overlap with the second metal member 152 (hereinafter referred to as a second portion of the second wiring portion 12A3). The second portion of the second wiring portion 12A3 is located inside the second metal member 152 in a top view. In other words, the second portion of the second wiring portion 12A3 is located inside the first portion of the second wiring portion 12A3 in a top view.

[0114] The package 10A provided with the second wiring portion 12A3 can be formed to be smaller in size than the package 10 provided with the second wiring portion 12A2 and the first bonding pattern 13A1, thereby achieving a small-sized light emitting device.

[0115] The width of the package 10 in the X direction can be 2 mm or more and 4 mm or less, the width of the package 10 in the Y direction can be 1.2 mm or more and 2.9 mm or less, and the width of the package 10 in the Z direction can be 1 mm or more and 3 mm or less.

[0116] (Light emitting device 2) In the light emitting device 2, the one or more wirings 60 include a wiring 60 joined to the second portion of the second wiring portion 12A3. The wiring 60 is not joined to the first portion of the second wiring portion 12A3.

[0117] Although each embodiment of the present invention has been described above, the light-emitting device according to the present invention is not strictly limited to the light-emitting device of each embodiment. In other words, the present invention can be realized without being limited to the external shape and structure of the light-emitting device disclosed in each embodiment. The present invention can be applied without necessarily having all the components. For example, if some of the components of the light-emitting device disclosed in the embodiment are not described in the claims, the freedom of design by a person skilled in the art, such as substitution, omission, modification of shape, and change of material, is allowed for those components, and the invention described in the claims is specified to be applied.

[0118] Through the contents described so far in this specification, the following technical matters are disclosed. (Section 1) a substrate having an upper surface and a lower surface; A first metal member provided on the upper surface of the base and having a thickness in the vertical direction of 50 μm or more and 150 μm or less; a second metal member provided on the upper surface of the base, having the same thickness in the vertical direction as the first metal member, being spaced apart from the first metal member in a top view, and surrounding the first metal member; a semiconductor laser element disposed on the first metal member; a lid joined to the base via the second metal member. (Section 2) a reflecting member disposed on an upper surface of the base and having a light reflecting surface that reflects light emitted from the semiconductor laser element, the semiconductor laser element has a light emitting surface for emitting light, and emits light laterally from the light emitting surface; 2. The light emitting device according to item 1, wherein the reflecting member reflects the light emitted laterally from the semiconductor laser element upward by the light reflecting surface. (Section 3) 3. The light emitting device according to item 1 or 2, wherein the height of the lid in the vertical direction is 0.6 mm or more and 2 mm or less. (Section 4) Further comprising one or more lower metal members provided on the lower surface of the base, 4. The light emitting device according to any one of items 1 to 3, wherein, when viewed from above, the one or more lower metal members have a first portion overlapping the first metal member and a second portion overlapping the second metal member. (Section 5) 5. The light emitting device according to item 4, wherein, when viewed from above, the area of ​​the second metal member that overlaps with the one or more lower metal members is larger than the area of ​​the second metal member that does not overlap with the one or more lower metal members. (Section 6) A wiring portion provided on an upper surface of the base; a wiring portion that is joined to the wiring portion and electrically connects the semiconductor laser element to the base body; the wiring portion has a first portion that is separated from the first metal member in a top view and overlaps with the second metal member in a top view, and a second portion that is located inside the second metal member, Item 6. The light emitting device according to any one of items 1 to 5, wherein the wiring is joined to the second portion of the wiring portion. [Industrial Applicability]

[0119] The light-emitting device described in the embodiment can be used in a head-mounted display. In other words, a head-mounted display can be considered as one application form to which the present invention is applied. However, the present invention is not limited to this, and can be used in various applications such as a projector, lighting, exposure, vehicle headlights, and backlights for other displays. [Explanation of symbols]

[0120] 1, 2 Light emitting device 10, 10A Package 11 Base 11A Top 11B Bottom side 11C Side 12A wiring section 12A1 1st wiring section 12A2, 12A3 2nd wiring section 12B Bonding layer 13A Joint Pattern 13A1 First joint pattern 13A2 Second joint pattern 14 Lid 14A Top 14B 1st bottom surface 14C 2nd bottom surface 14D outer surface 14E Inside surface 14M Lid 14N frame 15 Upper metal member 15A top 15B Bottom 151 First metal member 152 Second metal member 16 Lower metal member 16A Top 16B Bottom 20 Semiconductor laser element 21A Top 21B Bottom side 21C side 22 Light exit surface 40 Reflective material 41A Bottom 41B Light reflective surface 60 Wiring

Claims

1. a substrate having an upper surface and a lower surface; A first metal member provided on the upper surface of the base and having a thickness in the vertical direction of 50 μm or more and 150 μm or less; a second metal member provided on the upper surface of the base, having the same thickness in the vertical direction as the first metal member, being spaced apart from the first metal member in a top view, and surrounding the first metal member; a semiconductor laser element disposed on the first metal member; a lid body joined to the base body via the second metal member.

2. a reflecting member disposed on an upper surface of the base and having a light reflecting surface that reflects light emitted from the semiconductor laser element, the semiconductor laser element has a light emitting surface for emitting light, and emits light laterally from the light emitting surface; The light emitting device according to claim 1 , wherein the reflecting member reflects the light emitted laterally from the semiconductor laser element upward by the light reflecting surface.

3. The light emitting device according to claim 1 , wherein the height of the lid in the vertical direction is 0.6 mm or more and 2 mm or less.

4. Further comprising one or more lower metal members provided on a lower surface of the base, The light emitting device according to claim 1 , wherein, in a top view, the one or more lower metal members have a first portion overlapping the first metal member and a second portion overlapping the second metal member.

5. The light emitting device according to claim 4 , wherein, in a top view, an area of ​​the second metal member that overlaps with the one or more lower metal members is larger than an area of ​​a region that does not overlap with the one or more lower metal members.

6. A wiring portion provided on an upper surface of the base; a wiring portion that is joined to the wiring portion and electrically connects the semiconductor laser element to the base body; the wiring portion has a first portion that is separated from the first metal member in a top view and overlaps with the second metal member in a top view, and a second portion that is located inside the second metal member, The light emitting device according to claim 1 , wherein the wiring is joined to the second portion of the wiring portion.

7. Providing a substrate having an upper surface and a lower surface; providing a first metal member and a second metal member on an upper surface of the substrate by the same process; disposing a semiconductor laser element on the first metal member; and joining the base body and the lid body via the second metal member, The first metal member and the second metal member have the same thickness in the vertical direction and are 50 μm or more and 150 μm or less, A method for manufacturing a light emitting device, wherein the first metal member and the second metal member are spaced apart from each other when viewed from above, and the second metal member surrounds the first metal member.

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