Power generation system, power generation unit, and manufacturing method of the power generation unit

The power generation system efficiently converts infrared rays into electrical energy using a silicon-based photoelectric conversion element and a reflector, addressing the inefficiencies and high costs of existing systems.

JP2025056624APending Publication Date: 2025-04-08MITSUBISHI HEAVY IND LTD +1
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Patent Information

Application Number
JP2023166210
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-09-27
Publication Date
2025-04-08

AI Technical Summary

Technical Problem

Existing power generation systems using infrared rays face inefficiencies due to the high cost of specialized photoelectric conversion cells and mismatched wavelength ranges between infrared emitters and commercially available solar panels.

Method used

A power generation system comprising an emitter heated by a heat source to radiate infrared rays, and a power generation unit with a photoelectric conversion element and a reflector that converts and reflects infrared rays to enhance energy utilization.

Benefits of technology

The system achieves efficient power generation while keeping costs low by utilizing a silicon-based photoelectric conversion element and a reflector to optimize infrared ray conversion and reflection.

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Abstract

To effectively generate power while suppressing a cost.SOLUTION: A power generating system comprises: an emitter that is heated by heat supplied from a heat source, and radiates infrared rays; and a power generation unit that is arranged with an interval to the emitter, and generates power by converting the infrared rays radiated from the emitter into an electric energy. The power generation unit comprises: a power generation part that includes a photoelectric conversion element that converts the infrared rays radiated from the emitter into the electric energy; and a reflection part that is provided on a side opposite to the emitter side against the power generation part, and reflects at least a part of the infrared rays transmitted through the power generation part to the emitter side.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present disclosure relates to a power generation system, a power generation unit, and a method for manufacturing a power generation unit. [Background technology]

[0002] Patent Document 1 discloses a configuration for generating power by thermophotovoltaic (TPV) generation, in which an emitter (radiator) is heated and infrared rays emitted from the emitter are converted into electrical energy by a photoelectric conversion cell. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2001-196622 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the configuration described in Patent Document 1, the photoelectric conversion cell that can convert light in the infrared wavelength range emitted from the emitter into electrical energy with high efficiency is made of a special material compared to solar panels, and is therefore expensive. On the other hand, when trying to apply inexpensive, commercially available solar panels to TPV power generation, the wavelength range of infrared light emitted from the emitter does not match the wavelength range in which solar panels that use visible light can generate power efficiently, making it impossible to generate power efficiently.

[0005] The present disclosure has been made to solve the above-mentioned problems, and aims to provide a power generation system, a power generation unit, and a method for manufacturing a power generation unit that can generate power efficiently while reducing costs. [Means for solving the problem]

[0006] In order to solve the above problems, the power generation system of the present disclosure comprises an emitter that is heated by heat supplied from a heat source and radiates infrared rays, and a power generation unit that is arranged at a distance from the emitter and generates electric power by converting the infrared rays radiated from the emitter into electrical energy, wherein the power generation unit comprises a power generation section including a photoelectric conversion element that converts the infrared rays radiated from the emitter into electrical energy, and a reflecting section that is provided on the opposite side of the power generation section from the emitter side and reflects at least a portion of the infrared rays that pass through the power generation section toward the emitter side.

[0007] The power generation unit according to the present disclosure is a power generation unit used in a power generation system as described above, and comprises a power generation section including a photoelectric conversion element that converts infrared rays radiated from the emitter into electrical energy, and a reflecting section that is provided on the opposite side of the power generation section from the emitter side and reflects at least a portion of the infrared rays that have passed through the power generation section toward the emitter side.

[0008] A method for manufacturing a power generation unit according to the present disclosure is a method for manufacturing a power generation unit as described above, and includes the steps of preparing the power generation section and the reflecting section, and laminating the power generation section and the reflecting section. Effect of the Invention

[0009] According to the power generation system, power generation unit, and method for manufacturing a power generation unit of the present disclosure, power generation can be performed efficiently while reducing costs. [Brief description of the drawings]

[0010] [Figure 1] 1 is a diagram showing a schematic configuration of a power generation system according to an embodiment of the present disclosure. [Diagram 2] 4 is a flowchart showing the steps of a method for manufacturing a power generation unit according to an embodiment of the present disclosure. [Diagram 3] FIG. 11 is a diagram showing a modified example of the power generation system. [Figure 4] FIG. 11 is a diagram showing another modified example of the power generation system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments for carrying out a power generation system, a power generation unit, and a method for manufacturing a power generation unit according to the present disclosure will be described with reference to the accompanying drawings. However, the present disclosure is not limited to the embodiments. (Power generation system configuration) As shown in FIG. 1, the power generation system 1 includes a heat source 2 and a system main body 3. The heat source 2 may be provided exclusively for heating the emitter 4 described below. The heat source 2 may be used for other purposes, and the emitter 4 may be heated by exhaust heat discharged from the heat source 2. Examples of such a heat source 2 include a gas turbine and a solar light collecting device. There is no particular limitation on the method of heating the emitter 4 by the heat source 2. Examples of the method of heating the emitter 4 by the heat source 2 include utilizing exhaust heat from a gas turbine and irradiating concentrated sunlight.

[0012] (System configuration) The system body 3 includes an emitter 4 and a power generation unit 5. In this embodiment, the system body 3 is housed, for example, in a vacuum chamber (not shown). The system body 3 may be disposed in the air instead of being housed in a vacuum chamber.

[0013] (Emitter configuration) The emitter 4 is heated by heat supplied from the heat source 2. When the emitter 4 is heated, it emits infrared rays R1. Here, the higher the temperature of the emitter 4, the greater the amount of energy of the infrared rays R1 emitted from the emitter 4. The emitter 4 is preferably heated to, for example, 1000° C. or higher.

[0014] The emitter 4 preferably has a melting point equal to or higher than the temperature to which it is heated by the heat source 2. Examples of materials that form the emitter 4 include ceramics, bricks, and metals having melting points equal to or higher than the heating temperature. The emitter 4 may have any shape and size. The emitter 4 may be, for example, in the form of a panel, a block, a cylinder, or the like.

[0015] The emitter 4 preferably has an emitter-side facing surface 5f that faces the power generating section 6, which will be described later. The emitter 4 preferably has a black surface to increase the radiation efficiency of the infrared rays R1. In particular, it is preferable that a coating film made of black paint is formed on the surface of the emitter 4. In this case, the entire surface of the emitter 4 may be covered with the coating film made of black paint, or at least the emitter-side facing surface 5f may be covered with the coating film made of black paint.

[0016] (Power generation unit configuration) The power generating unit 5 includes a power generating section 6, a reflecting section 7, and a cooling section 8. In this embodiment, each of the power generating section 6, the reflecting section 7, and the cooling section 8 is formed in a plate shape having a predetermined thickness. In this embodiment, the power generating section 6, the reflecting section 7, and the cooling section 8 are stacked in this order.

[0017] The power generating unit 6 is disposed at a distance from the emitter 4 .

[0018] The power generating section 6 includes a photoelectric conversion element 61 that converts infrared rays R1 emitted from the emitter 4 into electrical energy to generate electric power, and a collector electrode 62. The photoelectric conversion element 61 has a surface 61f facing the emitter 4. The power generation unit 6 generates electric energy by the photovoltaic effect caused by infrared rays R1 entering the inside from the surface 61f. The collector electrode 62 is provided to extract electric power from a transparent electrode (not shown) provided on the surface 61f of the photoelectric conversion element 61 to the outside.

[0019] It is preferable to use a semiconductor substrate using silicon materials such as single crystal silicon and amorphous silicon, glass materials, sapphire, etc., as the photoelectric conversion element 61. Among these, a semiconductor substrate using a silicon material used in solar panels, a so-called silicon substrate, is low cost.

[0020] It is preferable that the surface 61f of the photoelectric conversion element 61 does not have an anti-reflection film such as that provided on a solar panel. In other words, it is preferable that only the atmosphere A of the space in which the power generation system 1 is installed is interposed between the surface 61f of the photoelectric conversion element 61 and the emitter 4. The atmosphere A interposed between the surface 61f of the photoelectric conversion element 61 and the emitter 4 may be air or a gas such as nitrogen. In addition, when the power generation system 1 is housed in a vacuum chamber, the atmosphere A interposed between the surface 61f of the photoelectric conversion element 61 and the emitter 4 may be an atmosphere A with a predetermined vacuum degree or higher in the vacuum chamber. Even if the current collecting electrode 62 is provided on a part of the surface 61f, in the portion excluding the portion where the current collecting electrode 62 is provided, only the spatial atmosphere A is interposed between the surface 61f and the emitter 4. Therefore, it can be said that substantially only the spatial atmosphere A is interposed between the surface 61f and the emitter 4. Moreover, it is preferable that the surface 61f of the photoelectric conversion element 61 does not have a surface treatment such as a concave-convex processing for preventing reflection, as is provided on a solar panel. The surface 61f of the photoelectric conversion element 61 of this embodiment is preferably a smooth surface.

[0021] The reflector 7 is provided on the opposite side of the power generating unit 6 from the emitter 4 side. The reflector 7 is provided so as to cover the back surface 6g of the power generating unit 6. The reflector 7 is formed in the shape of a film extending along the back surface 6g. The reflector 7 may be in the shape of a plate provided so as to extend along the back surface 6g. The reflecting section 7 reflects at least a portion of the infrared rays R1 that have passed through the power generating section 6 toward the emitter 4. The reflecting section 7 is made of a reflective material capable of reflecting infrared rays. Examples of such reflective materials include gold, silver, and aluminum. The reflecting section 7 is joined to the power generating section 6 by deposition using sputtering, adhesion, or the like.

[0022] The cooling section 8 is provided on the side of the reflecting section 7 opposite to the power generating section 6. The cooling section 8 is provided so as to cover at least a part of the reflecting section 7. The cooling section 8 is preferably provided so as to cover the entire reflecting section 7. The cooling unit 8 cools the power generation unit 6 and the reflecting unit 7, the temperatures of which increase due to infrared rays. The cooling unit 8 may be a heat sink made of, for example, an aluminum alloy, which absorbs heat from the reflecting unit 7 and dissipates it to the surroundings. The cooling unit 8 may also be a heat exchanger which exchanges heat with the reflecting unit 7 by exchanging heat with a refrigerant introduced from the outside.

[0023] In such a power generation system 1, when the emitter 4 is heated by heat supplied from the heat source 2, infrared rays R1 are emitted from the emitter 4. The infrared rays R1 emitted from the emitter 4 are incident on the power generation section 6 of the power generation unit 5 arranged at a distance from the emitter 4, and are converted into electrical energy by the photoelectric conversion element 61, generating electric power. Here, when a silicon substrate similar to that used in solar panels is used for the photoelectric conversion element 61, it is preferable to configure the power generation system 1 so that the power generation unit 6 generates electric power in a temperature range of 50°C or more and 150°C or less. The temperature range in which the power generation unit 6 generates electric power is more preferably 70°C or more and 130°C or less. The temperature range in which the power generation unit 6 generates electric power is particularly preferably 90°C or more and 110°C or less. In this way, it is possible to increase the photoelectric conversion efficiency, particularly due to the photovoltaic effect. A portion of the infrared rays R1 emitted from the emitter 4 passes through the power generation unit 6. At least a portion of the infrared rays R1 that pass through the power generation unit 6 is reflected by the reflecting unit 7 toward the emitter 4. When the infrared rays R2 reflected by the reflecting unit 7 toward the emitter 4 are irradiated onto the emitter 4, the emitter 4 is heated. In this way, the emitter 4 is heated by the infrared rays R2 reflected by the reflecting unit 7 toward the emitter 4, in addition to the heat supplied from the heat source 2. This further increases the temperature of the emitter 4, and the amount of energy of the infrared rays R1 radiated from the emitter 4 increases.

[0024] (Procedure for manufacturing power generating units) FIG. 2 is a flowchart showing the steps of a method for manufacturing the power generation unit 5 in this embodiment. As shown in FIG. 2, the method for manufacturing the power generation unit 5 includes a step S1 of preparing materials and a step S2 of stacking the materials. In the material preparation step S1, as materials for constructing the power generation unit 5, members for constructing the power generation section 6, materials or members for constructing the reflecting section, and members for constructing the cooling section 8 are prepared. Next, in the material stacking step S2, the members constituting the power generating unit 6, the materials or members constituting the reflecting unit, and the members constituting the cooling unit 8, which were prepared in the material preparation step S1, are stacked and bonded together. Here, the reflecting unit 7 may be formed by vapor deposition on the members constituting the power generating unit 6, or the plate-shaped reflecting unit 7 prepared in the material preparation step S1 may be bonded to the power generating unit 6. In this manner, the power generating unit 5 is manufactured.

[0025] (Action and effect) In the power generation system 1, power generation unit 5, and manufacturing method of the power generation unit 5 configured as described above, infrared rays R1 are emitted from the emitter 4 heated by heat supplied from the heat source 2. The infrared rays R1 emitted from the emitter 4 are converted into electrical energy in the power generation section 6 of the power generation unit 5 arranged at a distance from the emitter 4, thereby generating electric power. A portion of the infrared rays R1 emitted from the emitter 4 passes through the power generation section 6. At least a portion of the infrared rays R1 that pass through the power generation section 6 is reflected toward the emitter 4 by a reflecting section 7 provided on the opposite side of the power generation section 6 from the emitter 4. As a result, the emitter 4 is also heated by the infrared rays R2 reflected toward the emitter 4 by the reflecting section 7. In this way, the emitter 4 is heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4 in addition to the heat supplied from the heat source 2, thereby further increasing the temperature of the emitter 4 and increasing the amount of energy of the infrared rays R1 radiated from the emitter 4. Also, the heat supplied from the heat source 2 can be reduced by the amount of the emitter 4 being heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4. Therefore, the proportion of infrared rays R1 emitted from the emitter 4 that are effectively utilized increases, and the power generation efficiency of the entire power generation system 1 increases. Furthermore, the increased power generation efficiency leads to substantial cost reduction even when the same photoelectric conversion element 61 is used. As a result, power generation can be performed efficiently while keeping costs down.

[0026] Furthermore, by using the photoelectric conversion element 61 using a silicon material, it is possible to use, for example, a material of a solar panel for photovoltaic power generation as the power generation unit 6. Since solar panels are produced in large quantities and are inexpensive, it is possible to more effectively reduce costs.

[0027] Moreover, the power generating section 6 and the reflecting section 7 can be cooled by the cooling section 8, and the power generating efficiency in the power generating section 6 can be improved.

[0028] Moreover, by heating the emitter 4 to a high temperature range, such as 1000° C. or higher, the amount of energy of the infrared rays R1 radiated from the emitter 4 can be increased, enabling more efficient power generation.

[0029] Furthermore, by generating electricity in the power generation section 6 in the temperature range of 50° C. to 150° C., power generation efficiency can be improved compared to generating electricity in the so-called normal temperature range, that is, below 50° C.

[0030] Furthermore, by having only the atmosphere A of the space in which the power generation system 1 is installed interposed between the power generation unit 6 and the emitter 4, the infrared rays R1 emitted from the emitter 4 are directly incident on the power generation unit 6. As a result, the amount of energy of the infrared rays R1 incident on the power generation unit 6 is increased compared to the case where an anti-reflection film is provided on the surface 61f of the power generation unit 6, enabling more efficient power generation.

[0031] Furthermore, by making the surface 61f of the power generating unit 6 a smooth surface, the infrared rays R1 emitted from the emitter 4 are efficiently incident on the power generating unit 6. As a result, the amount of energy of the infrared rays R1 incident on the power generating unit 6 is increased, and power generation can be performed more efficiently, compared to when various surface treatments for the purpose of anti-reflection or the like are performed on the surface 61f of the power generating unit 6.

[0032] (Modification of the embodiment) In the above embodiment, the photoelectric conversion element 61 may include a doped portion having a high concentration of n-type semiconductor in order to increase the current collection efficiency of the current collecting electrode 62. However, the doped portion prevents infrared rays from entering the power generating unit 6. Therefore, for example, as shown in FIG. 3, a doped portion 81 may be provided only around the collector electrode 62, so that the area where the infrared rays are blocked by the doped portion 81 is kept as small as possible. Furthermore, as shown in FIG. 4, when a layer-like (film-like) doped portion 82 is provided along the surface of the photoelectric conversion element 61, it is preferable to make the thickness of the doped portion 82 as thin as possible.

[0033] In the above embodiment, the surface 61f of the photoelectric conversion element 61 is not provided with a surface treatment such as an anti-reflection film or a surface treatment such as uneven processing for anti-reflection, as is provided on a solar panel, but this is not limited to this. If a commercially available solar panel having an anti-reflection film or a surface treatment for anti-reflection on its surface is used as the photoelectric conversion element 61, the power generation unit 5 and the power generation system 1 can be configured at low cost. In this case, although the incidence efficiency of infrared rays to the photoelectric conversion element 61 is reduced by the anti-reflection film or the surface treatment for anti-reflection, the power generation efficiency is improved by reflecting part of the infrared rays to the emitter 4 by the reflecting portion 7.

[0034] In addition, when using a commercially available solar panel equipped with an anti-reflection film or a surface treatment portion for anti-reflection as the photoelectric conversion element 61, the anti-reflection film or the surface treatment portion for anti-reflection may be removed.

[0035] In this case, when manufacturing the power generation unit 5 using the process shown in Figure 2, when preparing the components that make up the power generation section 6 in material preparation step S1, surface treatments such as anti-reflective coatings and anti-reflective roughening may be removed from the surface of a commercially available solar panel by appropriate mechanical processing, chemical processing, etc.

[0036] <Additional Notes> The power generation system, the power generation unit, and the method for manufacturing the power generation unit described in the embodiments can be understood, for example, as follows.

[0037] (1) A power generation system 1 according to a first aspect includes an emitter 4 that is heated by heat supplied from a heat source 2 and emits infrared rays R1, and a power generation unit 5 that is arranged at a distance from the emitter 4 and generates electric power by converting the infrared rays R1 emitted from the emitter 4 into electrical energy. The power generation unit 5 includes a power generation section 6 that includes a photoelectric conversion element that converts the infrared rays R1 emitted from the emitter 4 into electrical energy, and a reflection section 7 that is provided on the opposite side of the power generation section 6 from the emitter 4 and reflects at least a portion of the infrared rays R1 that have passed through the power generation section 6 toward the emitter 4.

[0038] In this power generation system 1, infrared rays R1 are emitted from an emitter 4 which is heated by heat supplied from a heat source 2. The infrared rays R1 emitted from the emitter 4 are converted into electrical energy in a power generation section 6 of a power generation unit 5 which is disposed at a distance from the emitter 4, thereby generating electric power. A portion of the infrared rays R1 emitted from the emitter 4 passes through the power generation section 6. At least a portion of the infrared rays R1 which pass through the power generation section 6 is reflected toward the emitter 4 by a reflecting section 7 which is provided on the opposite side of the power generation section 6 from the emitter 4. As a result, the emitter 4 is also heated by the infrared rays R2 reflected toward the emitter 4 by the reflecting section 7. In this way, the emitter 4 is heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4 in addition to the heat supplied from the heat source 2, thereby further increasing the temperature of the emitter 4 and increasing the amount of energy of the infrared rays R1 radiated from the emitter 4. Also, the heat supplied from the heat source 2 can be reduced by the amount of the emitter 4 being heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4. Therefore, the proportion of infrared rays R1 emitted from the emitter 4 that are effectively utilized increases, and the power generation efficiency of the entire power generation system 1 increases. Furthermore, the increased power generation efficiency leads to substantial cost reduction even when the same photoelectric conversion element 61 is used. As a result, power generation can be performed efficiently while keeping costs down.

[0039] (2) The power generating system 1 according to a second aspect is the power generating system 1 according to (1), in which the photoelectric conversion element 61 is formed using a silicon material.

[0040] As a result, for example, a so-called solar panel for photovoltaic power generation can be used as the power generation unit 6 including the photoelectric conversion element 61 using a silicon material. Since solar panels are produced in large quantities and are inexpensive, costs can be reduced more effectively.

[0041] (3) The power generation system 1 according to a third aspect is the power generation system 1 according to (1) or (2), further including a cooling unit 8 that cools the power generation unit 6 and the reflecting unit 7.

[0042] This allows the power generating section 6 and the reflecting section 7 to be cooled by the cooling section 8, and the power generating efficiency in the power generating section 6 can be improved.

[0043] (4) The power generation system 1 according to a fourth aspect is any one of the power generation systems 1 according to (1) to (3), in which the emitter 4 is heated to 1000° C. or higher.

[0044] As a result, by heating the emitter 4 to a high temperature range, such as 1000° C. or higher, the amount of energy of the infrared rays R1 radiated from the emitter 4 can be increased, and power generation can be performed more efficiently.

[0045] (5) The power generation system 1 according to a fifth aspect is any one of the power generation systems 1 according to (1) to (4), in which the power generation unit 6 generates electric power in a temperature range of 50° C. or more and 150° C. or less.

[0046] As a result, by generating electricity in the power generation section 6 in a temperature range of 50° C. or higher and 150° C. or lower, power generation efficiency can be improved compared to when power is generated in the so-called normal temperature range, that is, below 50° C.

[0047] (6) The power generation system 1 of the sixth aspect is any one of the power generation systems 1 of (1) to (5), in which only the atmosphere A of the space in which the power generation unit 6 and the emitter 4 are arranged is interposed between the power generation unit 6 and the emitter 4.

[0048] As a result, by having only the spatial atmosphere A between the power generation unit 6 and the emitter 4, the infrared rays R1 emitted from the emitter 4 are directly incident on the power generation unit 6. As a result, compared to the case where an anti-reflection coating is provided on the surface 61f of the power generation unit 6, the amount of energy of the infrared rays R1 incident on the power generation unit 6 is increased, and power generation can be performed more efficiently.

[0049] (7) The power generation system 1 according to a seventh aspect is any one of the power generation systems 1 according to (1) to (6), in which the surface 61f of the power generation section 6 facing the emitter 4 is a smooth surface.

[0050] As a result, by making the surface 61f of the power generating unit 6 a smooth surface, the infrared rays R1 emitted from the emitter 4 are efficiently incident on the power generating unit 6. As a result, compared to when various surface 61f treatments for the purpose of anti-reflection or the like are performed on the surface 61f of the power generating unit 6, the amount of energy of the infrared rays R1 incident on the power generating unit 6 is increased, and power generation can be performed more efficiently.

[0051] (8) A power generation unit according to an eighth aspect is a power generation unit used in any one of the power generation systems (1) to (7), and includes a power generation section 6 including a photoelectric conversion element that converts infrared rays R1 emitted from the emitter 4 into electrical energy, and a reflecting section 7 that is provided on the opposite side of the power generation section 6 from the emitter 4 and reflects at least a portion of the infrared rays R1 that have passed through the power generation section 6 toward the emitter 4.

[0052] As a result, the infrared rays R1 emitted from the emitter 4 are converted into electric energy in the power generation section 6 of the power generation unit 5 arranged at a distance from the emitter 4. A part of the infrared rays R1 emitted from the emitter 4 passes through the power generation section 6. At least a part of the infrared rays R1 that pass through the power generation section 6 is reflected toward the emitter 4 by the reflecting section 7 provided on the opposite side of the power generation section 6 to the emitter 4. As a result, the emitter 4 is also heated by the infrared rays R2 reflected by the reflecting section 7 toward the emitter 4. In this way, the emitter 4 is heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4 in addition to the heat supplied from the heat source 2, thereby further increasing the temperature of the emitter 4 and increasing the amount of energy of the infrared rays R1 radiated from the emitter 4. Also, the heat supplied from the heat source 2 can be reduced by the amount of the emitter 4 being heated by the infrared rays R2 reflected by the reflecting portion 7 toward the emitter 4. Therefore, the proportion of infrared rays R1 emitted from the emitter 4 that are effectively utilized increases, and the power generation efficiency in the power generation unit 5 increases. Furthermore, the increased power generation efficiency leads to substantial cost reduction even when the same photoelectric conversion element 61 is used. As a result, power generation can be performed efficiently while keeping costs down.

[0053] (9) A manufacturing method for a power generation unit 5 according to a ninth aspect is a manufacturing method for a power generation unit 5 according to (8), and includes a step S1 of preparing the power generation section 6 and the reflecting section 7, and a step S2 of stacking the power generation section 6 and the reflecting section 7.

[0054] This makes it possible to manufacture the power generation unit 5 that can generate power efficiently while keeping costs down.

[0055] (10) A manufacturing method for a power generation unit 5 according to a tenth aspect is a manufacturing method for a power generation unit 5 according to (9), in which, in the process of preparing the power generation section 6 and the reflecting section 7, a film formed so as to cover the surface of the power generation section 6 is removed.

[0056] As a result, by removing the film formed to cover the power generating unit 6, the infrared rays R1 emitted from the emitter 4 are directly incident on the power generating unit 6. This increases the amount of energy of the infrared rays R1 incident on the power generating unit 6, enabling more efficient power generation. [Explanation of symbols]

[0057] 1. Power generation system 2…Heat source 3. System main body 4…Emitter 5…Power generation unit 5f…Emitter side facing surface 6…Power generation section 6g…Back 7…Reflector 8…Cooling section 61...Photoelectric conversion element 61f…Surface 62…Collecting electrode 81, 82...Doped section A…Atmosphere R1, R2…Infrared S1: Process of preparing materials S2: The process of stacking materials

Claims

1. an emitter that is heated by heat supplied from a heat source and emits infrared rays; a power generation unit disposed at a distance from the emitter and configured to generate electric power by converting infrared rays emitted from the emitter into electric energy, The power generation unit comprises: a power generating unit including a photoelectric conversion element that converts the infrared rays emitted from the emitter into electrical energy; a reflecting section that is provided on the opposite side of the power generating section from the emitter side and that reflects at least a portion of the infrared light that has passed through the power generating section toward the emitter side. Power generation system.

2. The photoelectric conversion element is formed using a silicon material. The power generation system according to claim 1 .

3. The power generating unit and the reflecting unit are further provided with a cooling unit. The power generation system according to claim 1 or 2.

4. The emitter is heated to above 1000° C. The power generation system according to claim 1 or 2.

5. The power generating unit generates electric power in a temperature range of 50° C. to 150° C. The power generation system according to claim 1 or 2.

6. Between the power generating unit and the emitter, only the atmosphere of the space in which the power generating unit and the emitter are disposed is interposed. The power generation system according to claim 1 or 2.

7. In the power generating section, the surface facing the emitter is a smooth surface. The power generation system according to claim 1 or 2.

8. A power generation unit for use in the power generation system according to claim 1 or 2, a power generating unit including a photoelectric conversion element that converts the infrared rays emitted from the emitter into electrical energy; a reflecting section that is provided on the opposite side of the power generating section from the emitter side and that reflects at least a portion of the infrared light that has passed through the power generating section toward the emitter side. Power generation unit.

9. A method for producing a power generation unit according to claim 8, comprising the steps of: preparing the power generating unit and the reflecting unit; and laminating the power generating section and the reflecting section. A method for manufacturing a power generating unit.

10. In the step of preparing the power generating unit and the reflecting unit, Remove the film formed to cover the surface of the power generating section. A method for producing the power generating unit of claim 9.

Citation Information

Patent Citations

  • Power generator

    JP2001196622A