Light emitting device

Abstract

To provide a light emitting device and a display device which are difficult to be broken.SOLUTION: Provided is a light emitting device which comprises an element layer and a substrate on the element layer, in which at least part of the substrate bends on the element layer side; and the substrate is translucent and has a refraction factor higher than that of the atmosphere; and the element layer has a light emitting element emitting light toward the substrate side. Alternatively, provided is a light emitting device which comprises an element layer and a substrate covering a top face and at least one lateral face of the element layer, in which the substrate is translucent and has a refraction factor higher than that of the atmosphere; and the element layer emits light toward the substrate side.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-emitting device, a display device, an electronic device, a lighting device, or a manufacturing method thereof. In particular, electroluminescence (EL A light-emitting device, a display device, an electronic device, a lighting device, or the manufacture thereof utilizing the phenomenon It concerns the method. [Background technology]

[0002] In recent years, light-emitting devices and display devices are expected to be used for a variety of purposes, and diversification is required. There are.

[0003] For example, in light-emitting devices and display devices for use in portable devices, etc., the devices are required to be thin and lightweight. In addition, there is a demand for light-emitting devices and display devices to have high functionality and high attachment. In order to realize added value, there is a demand for light emitting devices and display devices that are touch operable.

[0004] Light-emitting elements that utilize the EL phenomenon (also referred to as EL elements) are easy to make thin and lightweight. It has features such as being able to respond quickly to signals and being able to be driven by a low-voltage DC power supply. Applications of these materials to light-emitting devices and display devices are currently being considered.

[0005] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix type light emitting device having an EL element is disclosed. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0007] One embodiment of the present invention provides a novel light-emitting device, a display device, an electronic device, or a lighting device. Another object of the present invention is to provide a light-weight light-emitting device, a light-emitting display device, an electronic device, Another object of the present invention is to provide a signal processing device or a lighting device. One of the objects of the present invention is to provide a highly reliable light-emitting device, display device, electronic device, or lighting device. Another embodiment of the present invention is a light-emitting device, a display device, an electronic device, or the like that is not easily damaged. Another object of the present invention is to provide a lighting device having a thin thickness. It is an object of the present invention to provide a light-emitting device, a display device, an electronic device, or a lighting device. Another embodiment of the present invention is a light-emitting device, a display device, an electronic device, or a semiconductor device having high light extraction efficiency. Another object of the present invention is to provide a lighting device that consumes low power. It is an object of the present invention to provide a light-emitting device, a display device, an electronic device, or a lighting device having a high light-emitting property.

[0008] Note that one embodiment of the present invention does not necessarily solve all of the above problems. [Means for solving the problem]

[0009] One embodiment of the present invention includes a semiconductor device including an element layer and a substrate over the element layer, and at least a part of the substrate is a semiconductor device. The substrate is light-transmitting and has a refractive index higher than that of air. The element layer is The light emitting device has a light emitting element that emits light toward the substrate side.

[0010] In the above structure, at least a part of the element layer overlaps with a part of the substrate that is bent toward the element layer. It is preferable that the curves are in the same direction.

[0011] Another embodiment of the present invention is a substrate that covers an element layer and an upper surface and at least one side surface of the element layer. The substrate has a light-transmitting property and a refractive index higher than that of air, and the element layer faces the substrate side. The light emitting device has a light emitting element that emits light.

[0012] In each of the above structures, an adhesive layer is provided between the element layer and the substrate, and the adhesive layer has a light-transmitting property and is large. In this case, the adhesive layer is made of a resin having a refractive index different from that of the resin. It is particularly preferred that the particles have the following structure:

[0013] In each of the above configurations, the element layer preferably has a touch sensor.

[0014] In each of the above-mentioned structures, the substrate is preferably a substrate using an organic resin. By using organic resin instead of silicon, a light-emitting device that is lightweight and durable can be realized.

[0015] Also, one aspect of the present invention is a first substrate, a first adhesive layer on the first substrate, and a first adhesive layer an element layer having a light-emitting element thereon, a second adhesive layer on the element layer, and a second substrate on the second adhesive layer; At least a portion of the second substrate is bent toward the element layer, and a second adhesive layer and the second substrate each have a light-transmitting property and a refractive index higher than that of air, and the light-emitting element is This is a light emitting device that emits light toward the second substrate.

[0016] Also, one aspect of the present invention is a first substrate, a first adhesive layer on the first substrate, and a first adhesive layer An element layer having a light emitting element on the upper surface, and a second substrate covering the upper surface and at least one side surface of the element layer. and a second adhesive layer between the device layer and the second substrate. The plates are each transparent and have a refractive index higher than that of the air. The light emitting element is disposed on the second substrate side. It is a light-emitting device that emits light toward the target.

[0017] In each of the above configurations, the element layer is located on the first substrate side of the light receiving element, and The light-shielding layer overlaps the light element, and the sealing layer is between the light-shielding layer and the light-emitting element, and the sealing layer is resistant to the atmosphere. It is preferable that the refractive index is higher than that of the

[0018] Another embodiment of the present invention is a light-emitting element including a first substrate, a light-emitting element over the first substrate, and a light-transmitting a second substrate, a light-shielding layer on the second substrate, and a receiving layer between the second substrate and the light-shielding layer, the receiving layer overlapping the light-shielding layer; A first substrate and a second substrate are arranged in a frame shape so as to surround the optical element, the light emitting element, and the light receiving element. and an adhesive layer between the substrates, the surface of the first substrate having the light emitting element and the surface of the second substrate having the light receiving element. The surfaces having the light emitting element face each other, and the light emitting element is a light emitting device that emits light toward the second substrate side.

[0019] Also, one aspect of the present invention is a method for manufacturing a semiconductor device comprising: a first substrate; a first adhesive layer on the first substrate; A device having a light-emitting element, a sealing layer on the light-emitting element, a light-shielding layer on the sealing layer, and a light-receiving element on the light-shielding layer. a second substrate covering the upper surface and at least one side surface of the element layer; and a second adhesive layer between the substrates, the sealing layer, the second adhesive layer and the second substrate being respectively The light-emitting element has a light-transmitting property and a refractive index higher than that of the air, and emits light toward the second substrate side. It is a light emitting device.

[0020] In the above-mentioned structure, a coloring layer overlapping the light-emitting element may be provided between the sealing layer and the second substrate. preferable.

[0021] In each of the above configurations, the sealing layer preferably contains a resin and particles having a refractive index different from that of the resin. Preferred.

[0022] Further, electronic equipment having a display unit of the light emitting device having the above-mentioned configuration, and a display device using the light emitting device having the above-mentioned configuration A lighting device having such a lighting portion is also one embodiment of the present invention.

[0023] In this specification, the term "light-emitting device" includes a display device using a light-emitting element. The element is connected to a connector, such as anisotropic conductive film or TCP (Tape Carrier The module has a printed wiring board at the end of the TCP. The COG (Chip On Glass) method is used for the module or light emitting element. Modules on which ICs (integrated circuits) are directly mounted are also included in the category of light-emitting devices. This also includes light-emitting devices used in lighting fixtures, etc. Effect of the Invention

[0024] In one embodiment of the present invention, a novel light-emitting device, a display device, an electronic device, or a lighting device is provided. In one embodiment of the present invention, a lightweight light-emitting device, a display device, an electronic device, Alternatively, a lighting device with high reliability can be provided. It is possible to provide an optical device, a display device, an electronic device, or a lighting device. In one aspect, the present invention provides a light-emitting device, a display device, an electronic device, or the like that is less susceptible to breakage. Alternatively, in one embodiment of the present invention, a light-emitting device having a small thickness can be provided. Alternatively, the present invention can provide a device, a display device, an electronic device, or a lighting device. In one embodiment, a light-emitting device, a display device, an electronic device, or a lighting device with high light extraction efficiency is provided. Alternatively, in one embodiment of the present invention, a light-emitting device or a display device with low power consumption can be provided. The present invention may provide a lighting device, electronic device, or illumination device. [Brief description of the drawings]

[0025] [Figure 1] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Diagram 2] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Diagram 3] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Figure 4] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Diagram 5] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Figure 6] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Figure 7] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 8] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 9] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Figure 10] FIG. 2 shows a light emitting device according to an embodiment. [Figure 11] 1 is a cross-sectional photograph of a gate pad portion of a light emitting device according to an embodiment of the present invention. [Figure 12] 2A to 2C are diagrams illustrating a manufacturing process of a light-emitting device according to an embodiment; [Figure 13] FIG. 2 shows a light emitting device according to an embodiment. [Figure 14] FIG. 2 shows a light emitting device according to an embodiment. [Figure 15] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. [Figure 16] FIG. 2 shows a light emitting device according to an embodiment. [Figure 17] 1 illustrates an example of a light-emitting device according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0027] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0028] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0029] (Embodiment 1) In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

[0030] A light-emitting device according to one embodiment of the present invention includes an element layer and a substrate over the element layer. A part of the substrate is bent toward the element layer. The substrate has a light-transmitting property and a refractive index higher than that of the air. The sub-layer has a light-emitting element that emits light toward the substrate.

[0031] In one aspect of the present invention, at least a portion of a substrate on a surface side from which light of a light emitting device is extracted is Since the substrate is bent toward the element layer, the light-emitting device is less likely to be damaged. The size and position of the bent area are not particularly limited, and the bent line may be in the center of the substrate.

[0032] <Configuration example 1> The light-emitting device 100 shown in FIG. 1A includes an element layer 101, a substrate 103 on the element layer 101, has.

[0033] In each of the light-emitting devices shown in this embodiment, the element layer 101 emits light toward the substrate 103. In each light-emitting device shown in this embodiment, the element layer 101 has a light-emitting element. Light is extracted from the light extraction portion 104 via the substrate 103 .

[0034] In the light-emitting device 100 shown in FIG. 1A, at least a part of the substrate 103 is a layer including an element layer 101. Specifically, the end of the substrate 103 is bent toward the element layer 101. Here, the end of A refers to a region including at least the side surface of A, and further In this embodiment, the substrate 103 has two opposing side surfaces. In the illustrated example, the end portion including each side surface is bent toward the element layer 101, but the present invention is not limited to this. In addition, although an example in which the bending line is parallel to the side of the substrate is shown here, the present invention is not limited to this. That is, the bend line may be parallel to either side of the board, or parallel to the long side of the board. The bend line may be parallel to the short side of the substrate or may be in a row. It does not have to be parallel to the sides.

[0035] <Configuration example 2> The light-emitting device 110 shown in FIG. 1B includes an element layer 101, a substrate 103 over the element layer 101, and an adhesive layer 105 between the device layer 101 and the substrate 103 .

[0036] At least a part of the substrate 103 is bent toward the element layer 101. A part of the substrate 103 is bent toward the element layer 101 and overlaps with the bent part of the substrate 103. In other words, the edge of the substrate 103 and the edge of the element layer 101 are in contact with the light emitting device 110. is bent toward the surface opposite to the surface from which it is extracted.

[0037] <Configuration example 3> The light emitting device 120 shown in FIG. 1C has the same structure as that shown in FIG. 1B except for the structure of the light extraction portion 104. In the light-emitting device 110, only the non-light-emitting portion of the element layer 101 is curved. However, as in the light-emitting device 120, a part of the light-emitting portion of the element layer 101 is bent. In other words, it can be said that the light extraction section 104 of the light emitting device 120 has a curved surface.

[0038] <Configuration Example 4> The light-emitting device 130 shown in FIG. 1D includes an element layer 101 and a light-emitting layer 132 formed on the upper surface of the element layer 101 and at least a substrate 103 covering another side surface; and an adhesive layer 105 between the element layer 101 and the substrate 103; has.

[0039] At least a part of the substrate 103 is bent toward the element layer 101, and two sides of the element layer 101 are bent. The substrate 103 covers at least a part of the lower surface of the element layer 101 (the light-emitting surface of the element layer). The surface facing the substrate (face opposite to the substrate) may be covered.

[0040] In each of the above light-emitting device configuration examples 1 to 4, the substrate on the surface side from which the light of the light-emitting device is extracted is At least a part of the plate 103 is bent toward the element layer 101, which is unlikely to damage the light-emitting device. It can be tied.

[0041] Application examples 1 to 4 that can be applied to each of the configuration examples of the light emitting device described above are shown below.

[0042] <Application Example 1> The light-emitting device 140 shown in FIG. 2A has the same structure as the light-emitting device shown in FIG. In the light-emitting device according to one embodiment of the present invention, the lower surface (the light-emitting The device has an insulator 107 on the side opposite to the side from which light is extracted. In the case where the conductive layer is exposed to the air on the lower surface of the insulating film 107, The light emitting device of the embodiment can be electrically insulated from other devices. The side surfaces of the element layer 101, the substrate 103, and the adhesive layer 105 are covered with a protective film so as not to be exposed to the air. It is preferable to cover the surface of the light emitting device. This prevents impurities such as water from entering the inside of the light emitting device. It can be suppressed.

[0043] <Application Example 2> The light emitting device 150 shown in FIG. 2B includes a driver circuit section 106 and an FPC 108 (Flexible Printed Circuit). Here, F Although an example in which the PC 108 is provided on the substrate 103 side has been shown, the FPC 108 may be provided on the element layer 101 side. The light emitting device 150 includes the following components in addition to the driver circuit unit 106 and the FPC 108: This is similar to the light-emitting device 110 shown in FIG.

[0044] <Application example 3> In one embodiment of the present invention, an insulator 107 is provided on the substrate 10 on the surface from which the light of the light emitting device is extracted. 3 (FIG. 2(C)). This allows the light from the light emitting device to be extracted. This can prevent the surface from being scratched and furthermore the elements included in the element layer 101 from being destroyed. Furthermore, the insulator 107 is disposed between the substrate 103 and the element layer 101 and the surface from which the light of the light emitting device is extracted. By covering the curved side surface facing the surface of the light emitting device, it is possible to prevent water or other contaminants from entering the inside of the light emitting device. Therefore, the light emitting device is highly reliable and less susceptible to damage. It is possible.

[0045] <Application Example 4> In one embodiment of the present invention, the lower surface of the element layer 101 (the surface opposite to the surface from which the light of the light emitting device is extracted) ) side, and a protective layer 115 covering the power storage device 111 may be provided.

[0046] The end of the protective layer 115 overlaps with the portion of the substrate 103 that is bent toward the element layer 101 ( 2(D)) or a structure in which the element layer 101 overlaps the substrate 103 without the substrate 103 (FIG. 2( As shown in FIG. 2F, the element layer 101 and the power storage device 111 may be In addition, as shown in FIG. 2(G), the protective layer 11 may have an insulator 107 therebetween. The end of 5 may be configured to overlap with insulator 107 without substrate 103 being interposed therebetween.

[0047] At this time, the FPC provided on the substrate 103 side or the element layer 101 side is The protective layer 115 may be folded so as to be positioned between the protective layer 115 .

[0048] The light-emitting device of one embodiment of the present invention may be a touch-operable light-emitting device. Sensors include resistive, capacitive, infrared, optical, electromagnetic induction, In one embodiment of the present invention, a light-emitting device A touch sensor can be provided on the element layer 101 without increasing the number of substrates constituting the device. This is preferable because it allows the light emitting device to be made thinner and lighter.

[0049] The minimum value of the radius of curvature of the region of the substrate 103 that is bent toward the element layer 101 is 1 Preferably, the thickness is 1 mm or more and 150 mm or less, more preferably, 1 mm or more and 100 mm or less, and 1 mm or more and 150 mm or less. More preferably, the distance is from 2 mm to 50 mm, and particularly preferably from 2 mm to 5 mm. The minimum radius of curvature of the region of layer 101 that is curved in the same direction as substrate 103 is 1 m. m or more and 150 mm or less are preferable, 1 mm or more and 100 mm or less are more preferable, and 1 mm or less and 1 The upper limit is more preferably 50 mm or less, and particularly preferably 2 mm or more and 5 mm or less. The light-emitting device can be bent with a small radius of curvature (for example, 2 mm to 5 mm). It is unbreakable and highly reliable. By bending it with a small radius of curvature, the light-emitting device can be made thin. In addition, the light extraction portion 104 can be formed with a large radius of curvature (for example, 5 mm or more). 100 mm or less) to provide a wide display area (light-emitting area) on the side of the light-emitting device. It is possible.

[0050] <Examples of materials> Next, materials that can be used for the light-emitting device of one embodiment of the present invention will be described.

[0051] The element layer 101 includes at least a light-emitting element. The light-emitting element is an element capable of self-emitting light. The category includes elements whose luminance is controlled by current or voltage. For example, light-emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc. can be used. can.

[0052] The element layer 101 further includes transistors for driving the light-emitting elements, touch sensors, etc. It is okay to do so.

[0053] In the element layer 101, the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting device, This can prevent a decrease in the reliability of the device.

[0054] Insulating films with low water permeability include those containing nitrogen and silicon, such as silicon nitride film and silicon oxynitride film. Examples of the film include a film containing nitrogen and aluminum, such as an aluminum nitride film. Alternatively, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0055] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / m 2 ·day] or less , preferably 1 x 10 -6 [g / m 2 ·day] or less, preferably 1×10 -7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·day] or less .

[0056] The substrate 103 has a light-transmitting property and transmits at least the light emitted by the light-emitting element included in the element layer 101. The substrate 103 may be flexible. The refractive index of the substrate 103 is set to be equal to that of the air. higher than the rate of return.

[0057] Since organic resin has a smaller specific gravity than glass, if organic resin is used for the substrate 103, This is preferable because it allows the light-emitting device to be made lighter than when glass is used.

[0058] Examples of materials having flexibility and transparency to visible light include flexible materials. Thick glass, polyethylene terephthalate (PET), polyethylene naphthalate ( PEN) and other polyester resins, polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES ) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide-imide Resin, polyvinyl chloride resin, etc. In particular, it is preferable to use materials with a low thermal expansion coefficient. For example, polyamide-imide resin, polyimide resin, PET, etc. are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an inorganic filler is impregnated with organic resin. It is also possible to use a substrate with a mixed material to reduce the thermal expansion coefficient.

[0059] The substrate 103 is made of a layer of the above-mentioned material, which acts as a hard layer to protect the surface of the light-emitting device from scratches. A hard coat layer (e.g., a silicon nitride layer) or a layer of a material that can disperse pressure (e.g., an aluminum alloy layer) The light emitting element may be laminated with a layer of a tertiary amide resin or the like. In order to suppress a decrease in the life of the electrode, the electrode may have the insulating film having low water permeability.

[0060] The adhesive layer 105 has a light-transmitting property and transmits at least the light emitted by the light-emitting element of the element layer 101. In addition, the refractive index of the adhesive layer 105 is higher than the refractive index of the air.

[0061] The adhesive layer 105 may be made of a resin that cures at room temperature, such as a two-part mixed resin, a photocurable resin, or a thermosetting resin. Resins such as chemically resistant resins can be used. For example, epoxy resins, acrylic resins, silicone resins, etc. Examples of resins that are suitable for use include silicone resins and phenolic resins. In particular, materials with low moisture permeability such as epoxy resins are suitable. Fee is preferred.

[0062] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (oxide Use substances that adsorb moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the light emitting element. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light emitting device.

[0063] In addition, by mixing the above resin with a filler having a high refractive index (such as titanium oxide), the luminescent element This is preferable because it can improve the light extraction efficiency from the element.

[0064] The adhesive layer 105 may also include a scattering member that scatters light. For example, For 105, a mixture of the above resin and particles having a refractive index different from that of the above resin may also be used. The particles act as light scatterers.

[0065] The difference in refractive index between the resin and the particles having a refractive index different from that of the resin is preferably 0.1 or more. It is more preferable that the ratio is 0.3 or more. Specifically, the resin is an epoxy resin, an acrylic resin, or the like. Resins, imide resins, silicones, etc. can be used. Titanium oxide particles can also be used. , barium oxide, zeolite, etc. can be used.

[0066] Titanium oxide and barium oxide particles are preferred because they have a strong light scattering property. By using light, water contained in resin etc. can be absorbed, improving the reliability of the light-emitting element. It is possible to do so.

[0067] In order to function adequately as a scattering material, the particle size is preferably larger than the wavelength of visible light. Even if the primary particle size is smaller than the wavelength of visible light, it is possible to form secondary particles by agglomerating these particles. Specifically, the particle size of the particles is 0.05 μm or less. The thickness is preferably 5 μm or less, and more preferably 0.1 μm or more and 2 μm or less. It is preferable that the thickness of the film is less than 1 / 2 of the thickness of the film 5.

[0068] The haze value of the adhesive layer 105 is preferably 50% or less, more preferably 30% or less, and even more preferably 1 It is preferable to have a scattering member so that the scattering rate is 0% or less.

[0069] The mixing ratio of the resin and the particles is appropriately adjusted depending on the refractive index of the resin and the particle size and refractive index of the particles. For example, the amount of the resin may be 1 wt% or more and 10 wt% or less. do.

[0070] The reflective conductive film of the light emitting element is arranged at equal intervals. For optical devices, pixel density, or resolution, is 250 ppi or higher, or even 300 ppi or higher. When reflective conductive films are arranged at equal intervals with fine widths like this, the external light When the light is reflected by the conductive film, it creates a striped pattern on the screen due to the principle of diffraction grating. In addition, the outside scenery is reflected by the conductive film and appears on the screen. Problems also arise.

[0071] Since the adhesive layer 105 has a scattering member, the light from outside the light emitting device is scattered by the electrodes constituting the light emitting element. Even if the light is reflected by the adhesive layer 105, the reflected light is scattered when passing through the adhesive layer 105. In the light emitting device of the present invention, it is possible to prevent stripes from appearing on the screen. This can reduce color reflection.

[0072] Furthermore, if the adhesive layer 105 has a scattering member, the light is scattered to the outside of the substrate 103. In comparison with the case where a structure in which a color filter is provided is provided, the light can be scattered at a position close to the color filter. This can cause the light extracted from the light emitting element to become blurred, resulting in an unclear display on the light emitting device. Specifically, the distance from the color filter to the light extraction side is set to 100 μm or less, More preferably, the layer has a scattering member in an area of ​​10 μm or less, and further preferably, in an area of ​​1 μm or less. This prevents the light emission from becoming blurred and the display of the light emitting device from becoming unclear. It can be suppressed.

[0073] In this way, the structure in which the adhesive layer 105 has a scattering member allows the distance between adjacent light emitting elements to be short, High-definition light-emitting devices that are prone to stripes on the screen due to reflected light, specifically, resolutions of 250p pi or more, 256 ppi or more, or 300 ppi or more.

[0074] The insulator 107 is made of an organic resin that can be used for the substrate 103 and the adhesive layer 105. Alternatively, an inorganic insulating film may be used. The insulator 107 may or may not have light transmitting properties. However, as shown in FIG. 2C, the surface from which the light of the light emitting device is extracted is covered with an insulator 107. When the insulating material covers the substrate 103, a light-transmitting insulating material is used. The body 107 may be attached by an adhesive or the like.

[0075] The power storage device 111 includes a storage battery or a capacitor that has a function of storing power. Lithium secondary batteries such as lithium polymer batteries that use polymer electrolytes, lithium ion batteries, Nickel-metal hydride battery, nickel-cadmium battery, organic radical battery, lead-acid battery, secondary air battery, nickel Secondary batteries such as zinc batteries and silver-zinc batteries, and large-capacity capacitors (e.g., multilayer ceramic capacitors, electric double layer capacitors, etc.

[0076] The protective layer 115 may be made of the same material as the substrate 103. It does not matter whether 115 is light-transmitting or not. Thin metal materials or alloy materials may be used.

[0077] As described above, in the light-emitting device of one embodiment of the present invention, at least a part of the substrate is disposed on the element layer side. Because it is curved, it is difficult to break. In addition, by using organic resin for the substrate, it is lightweight and emits light. Therefore, in one aspect of the present invention, a generating device that is highly portable and easy to handle can be realized. Optical devices can be realized.

[0078] In addition, in the light-emitting device according to one embodiment of the present invention, the adhesive layer 105 includes a scattering material, so that reflected light This can prevent stripes from appearing on the screen. However, if a circular polarizing plate is provided, the amount of light extracted from the light emitting element will also be reduced. Therefore, in order to obtain the necessary brightness for a light-emitting device, the brightness of the light-emitting element must be In one embodiment of the present invention, the light-emitting element Therefore, the occurrence of stripes can be suppressed without reducing the amount of light extracted from the substrate. By applying one embodiment of the present invention, a light-emitting device with high light extraction efficiency and low power consumption can be obtained. This can be done.

[0079] This embodiment mode can be combined with other embodiment modes as appropriate.

[0080] (Embodiment 2) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0081] <Example 1> FIG. 3A shows a plan view of the light-emitting device 150 (FIG. 2B) shown in the first embodiment. FIG. 3(B) shows an example of a cross-sectional view taken along dashed line A1-A2 in FIG. 3(A).

[0082] The light-emitting device shown in FIG. 3B includes an element layer 101, an adhesive layer 105, and a substrate 103. The layers 101 include a substrate 201, an adhesive layer 203, an insulating layer 205, a number of transistors, a conductive layer 1 57, insulating layer 207, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, sealing layer 213, insulating It has an edge layer 261 , a coloring layer 259 , a light-shielding layer 257 , and an insulating layer 255 .

[0083] The conductive layer 157 is electrically connected to the FPC 108 via a connector 215 .

[0084] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The electrode 231 is electrically connected to a source electrode or a drain electrode of the transistor 240 . The end of the lower electrode 231 is covered with an insulating layer 211. The upper electrode 235 has a light-transmitting property and transmits the light emitted by the EL layer 233. .

[0085] A colored layer 259 is provided at a position overlapping the light emitting element 230, and a colored layer 259 is provided at a position overlapping the insulating layer 211. A light-shielding layer 257 is provided. The colored layer 259 and the light-shielding layer 257 are covered with an insulating layer 261. The space between the light emitting element 230 and the insulating layer 261 is filled with a sealing layer 213.

[0086] The light emitting device includes a light extraction section 104 and a drive circuit section 106, and includes a plurality of transistors 240 and the like. The transistor 240 is provided over an insulating layer 205. The edge layer 205 and the substrate 201 are bonded together by an adhesive layer 203. 5 and the substrate 103 are bonded together by an adhesive layer 105. If a film with low water permeability is used for the light emitting element 230 and the transistor 240, impurities such as water may enter the light emitting element 230 and the transistor 240. This is preferable because it can suppress the penetration of foreign matter into the light emitting device, thereby increasing the reliability of the light emitting device. The same material as that for the adhesive layer 105 can be used.

[0087] In the first specific example, the insulating layer 205, the transistor 240, and the light-emitting element are formed on a substrate having high heat resistance. The substrate 230 is then peeled off, and an insulating layer 20 is formed on the substrate 201 using an adhesive layer 203. 5, a transistor 240, and a light-emitting element 230 can be transposed to produce a light-emitting device. In addition, in the specific example 1, the insulating layer 255, the colored layer 259, and the A light-shielding layer 257 is formed, the substrate on which the light-shielding layer 257 is formed is peeled off, and an insulating layer is formed on the substrate 103 using the adhesive layer 105. 2 shows a light-emitting device that can be fabricated by transposing the layer 255, the color layer 259, and the light-shielding layer 257. There are.

[0088] When using a material with low heat resistance (such as resin) for the substrate, the substrate may be exposed to high temperatures during the manufacturing process. Since it is difficult to form a semiconductor substrate, there are limitations on the conditions for forming transistors and insulating films on the substrate. When using a material with high water permeability (such as resin) for the substrate of a light-emitting device, It is preferable to apply high temperature to form a membrane with low water permeability. Since transistors and other devices can be manufactured on a heat-resistant substrate, they can be used at high temperatures for reliability. This allows the formation of transistors with high electrical conductivity and insulating films with sufficiently low water permeability. By transferring these to a substrate with low heat resistance, a highly reliable light-emitting device can be manufactured. Therefore, in one embodiment of the present invention, a light-emitting device that is lightweight or thin and has high reliability can be realized. The details of the preparation method will be described later.

[0089] It is preferable that the substrate 103 and the substrate 201 are made of a material having high toughness. This makes it possible to realize a light emitting device that is highly impact resistant and difficult to break. The substrate 201 is an organic resin substrate, and the substrate 202 is a substrate made of a thin metal material or alloy material. This allows for a light-emitting device that is lighter and less prone to breakage than a glass substrate. can.

[0090] Metallic and alloy materials have high thermal conductivity and can easily conduct heat across the entire substrate, making it possible to This is preferable because it is possible to suppress a local temperature rise in the substrate. The thickness of the film is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less. is more preferable.

[0091] In addition, if a material with high thermal emissivity is used for the substrate 201, the surface temperature of the light emitting device will become high. Therefore, damage to the light emitting device and deterioration of its reliability can be suppressed. The plate and a layer of high thermal emissivity (for example, metal oxide or ceramic materials can be used) A laminated structure may also be used.

[0092] <Example 2> FIG. 4A shows another example of the light extraction portion 104 in the light-emitting device of one embodiment of the present invention. The light-emitting device of 4(A) is a touch-operable light-emitting device. The description of the configuration similar to that of the first specific example will be omitted.

[0093] The light-emitting device shown in FIG. 4A includes an element layer 101, an adhesive layer 105, and a substrate 103. Layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a number of transistors, an insulating layer 206, and a semiconductor device. 07, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, insulating layer 217, sealing layer 213, insulating An edge layer 261, a colored layer 259, a light-shielding layer 257, a plurality of light-receiving elements, a conductive layer 281, a conductive layer 28 3, insulating layer 291, insulating layer 293, insulating layer 295, and insulating layer 255.

[0094] In the specific example 2, an insulating layer 217 is provided on the insulating layer 211. By providing the insulating layer 217, The distance between the substrate 103 and the substrate 201 can be adjusted.

[0095] FIG. 4A shows an example in which a light-receiving element is provided between the insulating layer 255 and the sealing layer 213. Non-light-emitting areas of the device (e.g. areas where transistors and wiring are provided, areas where light-emitting elements are not provided) This allows the light receiving element to be placed over the area (not covered by the light receiving element) and reduces the size of the pixel (light emitting element) A touch sensor can be provided in a light emitting device without reducing the display efficiency.

[0096] The light-receiving element included in the light-emitting device of one embodiment of the present invention may be, for example, a pn-type or pin-type photodiode. In this embodiment, a p-type semiconductor layer 2 71, a pin-type photodiode having an i-type semiconductor layer 273 and an n-type semiconductor layer 275 Use the do.

[0097] The i-type semiconductor layer 273 contains p-type impurities and n-type impurities. Each is 1×10 20 cm -3 The concentration is less than 100, and the photoconductivity is 100% compared to the dark conductivity. The i-type semiconductor layer 273 contains an impurity element of Group 13 or 15 of the periodic table. In other words, i-type semiconductors are those that have an insulator for the purpose of valence electron control. When pure elements are not intentionally added, it shows weak n-type electrical conductivity. 73 is a method of intentionally or unintentionally adding impurity elements that impart p-type conductivity during or after film formation. This category includes those that have been added to the above.

[0098] The light-shielding layer 257 is located closer to the substrate 201 than the light-receiving element and overlaps the light-receiving element. The light emitted by the light emitting element 230 is blocked by the light blocking layer 257 located between the element and the sealing layer 213. It is possible to prevent the light receiving element from being irradiated with the light.

[0099] The conductive layer 281 and the conductive layer 283 are electrically connected to the light receiving element. It is preferable to use a conductive layer that transmits light incident on the light receiving element. It is preferable to use a conductive layer that blocks light incident on the light receiving element.

[0100] When the optical touch sensor is provided between the substrate 103 and the sealing layer 213, the light emitted by the light emitting element 230 This is preferable because it is less susceptible to the effects of noise and can improve the S / N ratio.

[0101] <Example 3> FIG. 4B shows another example of the light extraction portion 104 in the light-emitting device of one embodiment of the present invention. The light emitting device 4(B) is a touch operable light emitting device.

[0102] The light-emitting device shown in FIG. 4B includes an element layer 101, an adhesive layer 105, and a substrate 103. Layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a number of transistors, an insulating layer 206, and a semiconductor device. 07, insulating layer 209a, insulating layer 209b, a plurality of light-emitting elements, insulating layer 211, insulating layer 217 , a sealing layer 213, a colored layer 259, a light-shielding layer 257, a plurality of light-receiving elements, a conductive layer 280, a conductive layer 281 and an insulating layer 255 .

[0103] FIG. 4B shows an example in which a light-receiving element is provided between the insulating layer 205 and the sealing layer 213. The element is provided between the insulating layer 205 and the sealing layer 213 to form a transistor 240. The conductive layer and the semiconductor layer electrically connected to the light receiving element are made of the same material and in the same process as the conductive layer and the semiconductor layer. The photoelectric conversion layer that constitutes the light receiving element can be fabricated. Therefore, the fabrication process is greatly increased. A touch-operable light-emitting device can be manufactured without any need for a touch panel.

[0104] <Example 4> FIG. 5A illustrates another example of a light-emitting device according to one embodiment of the present invention. It is a light-emitting device that can be operated by a switch.

[0105] The light-emitting device shown in FIG. 5A includes an element layer 101, an adhesive layer 105, and a substrate 103. The layers 101 include a substrate 201, an adhesive layer 203, an insulating layer 205, a number of transistors, a conductive layer 1 56, conductive layer 157, insulating layer 207, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, insulating Edge layer 217, sealing layer 213, coloring layer 259, light-shielding layer 257, insulating layer 255, conductive layer 272 , a conductive layer 274, an insulating layer 276, an insulating layer 278, a conductive layer 294, and a conductive layer 296. do.

[0106] In FIG. 5A, a capacitive touch sensor is provided between an insulating layer 255 and a sealing layer 213. The capacitive touch sensor has a conductive layer 272 and a conductive layer 274.

[0107] The conductive layer 156 and the conductive layer 157 are electrically connected to the FPC 108 via the connector 215. The conductive layer 294 and the conductive layer 296 are electrically connected to the conductive layer 274 via the conductive particles 292. Therefore, it is possible to drive a capacitive touch sensor via FPC108. This can be done.

[0108] <Example 5> FIG. 5B shows another example of a light-emitting device according to one embodiment of the present invention. It is a light-emitting device that can be operated by a switch.

[0109] The light-emitting device shown in FIG. 5B includes an element layer 101, an adhesive layer 105, and a substrate 103. The layers 101 include a substrate 201, an adhesive layer 203, an insulating layer 205, a number of transistors, a conductive layer 1 56, conductive layer 157, insulating layer 207, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, insulating Edge layer 217, sealing layer 213, coloring layer 259, light-shielding layer 257, insulating layer 255, conductive layer 270 , a conductive layer 272 , a conductive layer 274 , an insulating layer 276 , and an insulating layer 278 .

[0110] In FIG. 5B, a capacitive touch sensor is provided between the insulating layer 255 and the sealing layer 213. The capacitive touch sensor has a conductive layer 272 and a conductive layer 274.

[0111] The conductive layer 156 and the conductive layer 157 are electrically connected to the FPC 108a via the connector 215a. The conductive layer 270 is electrically connected to the FPC 108b via the connection body 215b. Therefore, the light emitting element 230 and the transistor 240 are driven via the FPC 108a, and the F A capacitive touch sensor can be driven via PC 108b.

[0112] <Example 6> FIG. 6A shows another example of the light extraction portion 104 in the light-emitting device of one embodiment of the present invention.

[0113] The light-emitting device shown in FIG. 6A includes an element layer 101, a substrate 103, and an adhesive layer 105. Layer 101 includes a substrate 202, an insulating layer 205, a number of transistors, an insulating layer 207, a conductive layer 208, and a 08, insulating layer 209a, insulating layer 209b, a plurality of light-emitting elements, insulating layer 211, sealing layer 213 , and a color layer 259.

[0114] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The electrode 231 is connected to a source electrode or a drain electrode of the transistor 240 via the conductive layer 208. The lower electrode 231 is electrically connected to the insulating layer 211. The lower electrode 231 has a light-transmitting property, and the EL layer 233 It transmits the light emitted by

[0115] A colored layer 259 is provided at a position overlapping the light emitting element 230, and the light emitted by the light emitting element 230 is The light emitting element 230 is connected to the substrate 202 via the colored layer 259. The substrate 202 is made of the same material as the substrate 201. It can be made by

[0116] <Example 7> FIG. 6B shows another example of the light-emitting device according to one embodiment of the present invention.

[0117] The light-emitting device shown in FIG. 6B includes an element layer 101, an adhesive layer 105, and a substrate 103. The layer 101 includes a substrate 202, an insulating layer 205, a conductive layer 310a, a conductive layer 310b, and a plurality of light-emitting The device includes an element, an insulating layer 211 , a conductive layer 212 , and a sealing layer 213 .

[0118] The conductive layer 310a and the conductive layer 310b are external connection electrodes of the light emitting device, and are electrically connected to an FPC or the like. It can be effectively connected.

[0119] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The end of the electrode 231 is covered with an insulating layer 211. The light emitting element 230 is a bottom emitter. The lower electrode 231 has a light-transmitting property and transmits the light emitted by the EL layer 233. The conductive layer 212 is electrically connected to the lower electrode 231 .

[0120] The substrate 103 has a hemispherical lens, a microlens array, and a concave-convex structure as a light extraction structure. For example, the above-mentioned laser-coated film may be provided on a resin substrate. The lens or film is attached to the substrate by an adhesive having a refractive index similar to that of the lens or film. By bonding the substrate 103 with a light extraction structure, a substrate 103 having a light extraction structure can be formed. do.

[0121] The conductive layer 212 is not necessarily required, but the voltage drop caused by the resistance of the lower electrode 231 may be reduced. For the same purpose, the upper electrode 235 and the electric A conductive layer for electrically connecting the insulating layer 211, the EL layer 233, the upper electrode 235, or the like is provided on the insulating layer 211, the EL layer 233, the upper electrode 235, or the like. It is okay.

[0122] The conductive layer 212 may be made of copper, titanium, tantalum, tungsten, molybdenum, chromium, or neodymium. Materials selected from the group consisting of , scandium, nickel, and aluminum, or alloys containing these as their main components. The conductive layer 212 can be formed as a single layer or a multilayer using a gold material or the like. For example, it can be 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0.5 μm or less. μm or less.

[0123] A paste (such as silver paste) is used as the material for the conductive layer electrically connected to the upper electrode 235. When the conductive layer is heated, the metal constituting the conductive layer becomes granular and aggregates. As a result, the surface of the conductive layer becomes rough. For example, even if the conductive layer is formed on the insulating layer 211, the EL layer 233 However, it is difficult to completely cover the conductive layer, and it is difficult to electrically connect the upper electrode and the conductive layer. This is preferable because it makes it easier to

[0124] <Examples of materials> Next, materials that can be used in the light-emitting device of one embodiment of the present invention will be described. The description of the adhesive layer 105 can be taken into consideration in the first embodiment, so the description will be omitted. The description of the configuration previously described in this embodiment will also be omitted.

[0125] The structure of the transistor in the light-emitting device is not particularly limited. For example, a staggered transistor The transistor may be a top gate type or an inverted stagger type. The transistor may have any of the following structures: a bottom gate type, a bottom gate type, and a semiconductor device. The material of the body is not particularly limited, and examples thereof include silicon and germanium. At least one of indium, gallium, and zinc, such as n-Ga-Zn-based metal oxide An oxide semiconductor containing the above may be used.

[0126] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region If a semiconductor having crystallinity is used, the transistor This is preferable because it can suppress deterioration of the star characteristics.

[0127] The light-emitting element of the light-emitting device includes a pair of electrodes (a lower electrode 231 and an upper electrode 235) and the The device has an EL layer 233 provided between a pair of electrodes. One of the pair of electrodes functions as an anode. one functions as the cathode and the other as the cathode.

[0128] The light-emitting element is available in top emission structure, bottom emission structure, and dual emission structure. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. I wish.

[0129] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium Doped It can be formed using zinc oxide, etc. Also, gold, silver, platinum, magnesium, Nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or Metallic materials such as titanium, alloys containing these metallic materials, or nitrides of these metallic materials (e.g. For example, titanium nitride or the like can be used by forming it thin enough to have light transmitting properties. A laminated film of the above materials can also be used as the conductive film. For example, silver and magnesium It is preferable to use a laminated film of an alloy of this material and ITO, since the electrical conductivity can be increased. Graphene and the like may also be used.

[0130] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing palladium (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating the oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0131] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.

[0132] A voltage higher than the threshold voltage of the light emitting element is applied between the lower electrode 231 and the upper electrode 235. When the light is injected from the anode side to the EL layer 233, holes are injected from the cathode side and electrons are injected from the cathode side. The electrons and holes are recombined in the EL layer 233, and the light-emitting material contained in the EL layer 233 emits light. do.

[0133] The EL layer 233 has at least a light-emitting layer. The EL layer 233 has a positive electrode as a layer other than the light-emitting layer. Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties , a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties) The film may further include a layer containing a polymer (such as a polymeric material).

[0134] The EL layer 233 may be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 233 may each be formed by deposition (vacuum deposition). The method may include a transfer method, a printing method, an ink-jet method, a coating method, etc. do.

[0135] The insulating layer 205 and the insulating layer 255 can be made of an inorganic insulating material. It is preferable to use an insulating film with low water resistance because a highly reliable light emitting device can be realized using such an insulating film.

[0136] The insulating layer 207 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a nitride film, or the like. An inorganic insulating film such as a silicon oxide film or an aluminum oxide film can be used.

[0137] The insulating layer 209, the insulating layer 209a, and the insulating layer 209b are each a transistor It is preferable to select an insulating film having a planarizing function in order to reduce surface irregularities caused by the above-mentioned factors. For example, organic materials such as polyimide, acrylic, and benzocyclobutene resins can be used. In addition to the above organic materials, low-dielectric constant materials (low-k materials) can also be used. In addition, a laminated structure using insulating films and inorganic insulating films formed from these materials can be obtained. Good too.

[0138] The insulating layer 211 is provided to cover the end of the lower electrode 231. In order to improve the coverage of the EL layer 233 and the upper electrode 235 to be formed, the insulating layer 21 It is preferable that the first side wall is an inclined surface formed with a continuous curvature.

[0139] The material of the insulating layer 211 may be a resin or an inorganic insulating material. For example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin, etc. In particular, the insulating layer 211 can be easily formed. Therefore, it is preferable to use a negative photosensitive resin or a positive photosensitive resin. .

[0140] The method for forming the insulating layer 211 is not particularly limited, but may be a photolithography method, a sputtering method, Vapor deposition method, droplet ejection method (inkjet method, etc.), printing method (screen printing, offset printing etc.) can be used.

[0141] The insulating layer 217 can be formed using an inorganic insulating material, an organic insulating material, or the like. For example, negative or positive photosensitive resins, non-photosensitive resins, etc. may be used as organic insulating materials. Alternatively, a conductive layer may be formed instead of the insulating layer 217. For example, a metal material The metal material may be titanium, aluminum, or the like. A conductive layer can be used instead of the insulating layer 217, and the conductive layer and the upper electrode 235 can be electrically connected to each other. By adopting a configuration in which the upper electrode 235 is effectively connected, it is possible to suppress a potential drop caused by the resistance of the upper electrode 235. Furthermore, the insulating layer 217 may have a forward tapered shape or an inverse tapered shape.

[0142] The insulating layer 276, the insulating layer 278, the insulating layer 291, the insulating layer 293, and the insulating layer 295 are In particular, the insulating layer 278 and the insulating layer 295 can be formed using an inorganic insulating material or an organic insulating material. In order to reduce surface irregularities caused by the sensor element, an insulating layer having a planarizing function is used. is preferred.

[0143] The sealing layer 213 may be formed of a resin that hardens at room temperature, such as a two-part mixed resin, a photocurable resin, or a thermosetting resin. Resins such as chemically resistant resins can be used. For example, PVC (polyvinyl chloride) Resin, acrylic resin, polyimide resin, epoxy resin, silicone resin, PVB (polyvinyl chloride) (Nylbutyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used. The sealing layer 213 may contain a desiccant. When the light 230 is extracted to the outside of the light emitting device, a filler with a high refractive index is added to the sealing layer 213. It is preferable that the desiccant, the filler with a high refractive index, and the scattering material are contained. The materials that can be used for the adhesive layer 105 can be used.

[0144] The conductive layer 156, the conductive layer 157, the conductive layer 294, and the conductive layer 296 are transistors. The conductive layer constituting the light emitting element can be formed using the same material and in the same process. Layer 280 can be formed using the same materials and processes as the conductive layers that make up the transistors.

[0145] For example, the conductive layers may be made of molybdenum, titanium, chromium, tantalum, or tungsten. Metallic materials such as tin, aluminum, copper, neodymium, scandium, etc., or alloys containing these elements The conductive layer can be formed of a single layer or a multilayer structure using a gold material. Each of the electrodes may be formed using a conductive metal oxide. Indium (In2O3, etc.), tin oxide (SnO2, etc.), zinc oxide (ZnO), ITO, Indium zinc oxide (In2O3-ZnO, etc.) or these metal oxide materials with silicon oxide It is possible to use a material containing

[0146] In addition, the conductive layer 208, the conductive layer 212, the conductive layer 310a, and the conductive layer 310b are also The insulating film can be formed using the above-mentioned metal materials, alloy materials, conductive metal oxides, or the like.

[0147] The conductive layers 272 and 274, and the conductive layers 281 and 283 have a light-transmitting property. It is a conductive layer that is used to form a thin film. Examples include indium oxide, ITO, indium zinc oxide, and zinc oxide. For example, zinc oxide doped with gallium can be used. It can be formed using the same material and process as 72.

[0148] The conductive particles 292 are particles of organic resin or silica, etc., whose surfaces are coated with a metal material. It is preferable to use nickel or gold as the metal material because this reduces the contact resistance. In addition, particles that are coated with layers of two or more metal materials, such as nickel coated with gold, It is preferable to use:

[0149] The connector 215 is a paste or sheet made of a thermosetting resin mixed with metal particles. The metal particles can be of a material that exhibits anisotropic conductivity when bonded by heat. are particles that have layers of two or more metals, such as nickel particles coated with gold. It is preferable to use:

[0150] The colored layer 259 is a colored layer that transmits light of a specific wavelength band. For example, A red (R) color filter transmits light, and a green (G) color filter transmits light in the green wavelength range. A color filter, such as a blue (B) color filter that transmits light in the blue wavelength range, is used. Each color layer can be formed by using various materials and applying a printing method, an inkjet method, a photo method, etc. They are formed at desired positions by an etching method using lithography or the like.

[0151] In addition, a light-shielding layer 257 is provided between the adjacent colored layers 259. It blocks light that goes around from adjacent light emitting elements and suppresses color mixing between adjacent pixels. The end of the colored layer 259 is provided so as to overlap with the light-shielding layer 257, thereby suppressing light leakage. The light-shielding layer 257 can be made of a material that blocks light emitted from the light-emitting element. It can be formed using a metal material or a resin material containing a pigment or dye. As shown in FIG. 1B, the light shielding layer 257 is disposed in an area other than the light extraction unit 104 such as the driving circuit unit 106. It is preferable to provide the light emitting diode in the above-mentioned region, since this can suppress unintended light leakage due to guided light or the like.

[0152] In addition, when an insulating layer 261 is provided to cover the colored layer 259 and the light-shielding layer 257, This is preferable because it can prevent impurities such as pigments contained in the layer 257 from diffusing into the light emitting element and the like. The insulating layer 261 is preferably made of a light-transmitting material, and may be made of an inorganic insulating material or an organic insulating material. The insulating layer 261 may be made of the insulating film having low water permeability. If not required, it need not be provided.

[0153] <Production method example> Next, a method for manufacturing a light-emitting device according to one embodiment of the present invention will be illustrated with reference to FIGS. A light emitting device having the configuration of Concrete Example 1 (FIG. 3(B)) will be described as an example.

[0154] First, a peeling layer 303 is formed on a substrate 301, and an insulating layer 205 is formed on the peeling layer 303. Next, a plurality of transistors, a conductive layer 157, an insulating layer 207, and an insulating The layer 209, a plurality of light-emitting elements, and an insulating layer 211 are formed. Thus, openings are formed in the insulating layer 211, the insulating layer 209, and the insulating layer 207 (FIG. 7(A)).

[0155] In addition, a peeling layer 307 is formed on the formation substrate 305, and an insulating layer 255 is formed on the peeling layer 307. Next, a light-shielding layer 257, a coloring layer 259, and an insulating layer 261 are formed on the insulating layer 255. (Figure 7(B)).

[0156] The substrates 301 and 305 are made of a glass substrate, a quartz substrate, and a sapphire substrate, respectively. A metal substrate, a ceramic substrate, a metal substrate, or the like can be used.

[0157] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. For example, a glass material such as barium borosilicate glass can be used. If the strain point is high, it is advisable to use one with a strain point of 730°C or higher. By adding more aO), a more practical heat-resistant glass can be obtained. etc. can be used.

[0158] When a glass substrate is used as the substrate, a silicon oxide film or an oxide When an insulating film such as a silicon nitride film, a silicon nitride film, or a silicon oxynitride film is formed, the glass This is preferable since it can prevent contamination from the substrate.

[0159] The peeling layers 303 and 307 are made of tungsten, molybdenum, and titanium, respectively. , Tantalum, Niobium, Nickel, Cobalt, Zirconium, Zinc, Ruthenium, Rhodium an element selected from the group consisting of palladium, osmium, iridium, and silicon; It is made of a gold material or a compound material containing this element, and is a single layer or a laminated layer. Silicon The crystal structure of the layer containing may be amorphous, microcrystalline, or polycrystalline.

[0160] The release layer can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet discharging method, and a dispensing method.

[0161] When the peeling layer has a single layer structure, it is made of a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten oxide or oxide. a layer containing an oxynitride of molybdenum, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten Alternatively, a layer containing an oxide or oxynitride of a mixture of tantalum and molybdenum may be formed. A mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. do.

[0162] In addition, a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten may be used as the peeling layer. In the case of forming a tungsten-containing layer, an insulating film made of oxide is formed on the tungsten-containing layer. By forming the insulating film, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating film. In addition, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. , oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, ozone water, and other highly oxidizing solvents Alternatively, a layer containing tungsten oxide may be formed by performing a treatment with a liquid or the like. The treatment and heating process may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The above plasma treatment or heat treatment may be performed under a gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating layer that is formed later. do.

[0163] Each insulating layer is formed using a method such as sputtering, plasma CVD, coating, or printing. For example, the film formation temperature can be increased to 250°C or higher, up to 400°C, using the plasma CVD method. By forming the membrane as described below, it is possible to obtain a dense membrane with extremely low water permeability.

[0164] Then, the surface of the production substrate 305 on which the colored layer 259 and the like are provided or the light emitting element of the production substrate 301 is A material that will become the sealing layer 213 is applied to the surface on which the 230, etc. are provided, and the surface is sealed with the sealing layer 213. The fabrication substrate 301 and the fabrication substrate 305 are bonded together so as to face each other (FIG. 7(C) ).

[0165] Then, the fabrication substrate 301 is peeled off, and the exposed insulating layer 205 and substrate 201 are bonded to the adhesive layer 203. The substrate 305 is peeled off, and the insulating layer 255 and the substrate 1 are bonded to each other. 8A, the substrate 103 is bonded to the conductive layer 15 using an adhesive layer 105. 7, the conductive layer 157 and the substrate 103 may overlap each other.

[0166] For example, a peeling layer may be formed by a method using a film to be peeled off. When a layer containing a metal oxide film is formed on the side in contact with the peeled layer, the metal oxide film is crystallized. The layer to be peeled off can be peeled off from the substrate by weakening the layer. When an amorphous silicon film containing hydrogen is formed as a peeling layer between the plate and the peeled layer, the laser beam The amorphous silicon film is removed by irradiation or etching, so that the layer to be peeled off is separated from the production substrate. In addition, the peeling layer may include a layer including a metal oxide film on the side in contact with the layer to be peeled. The metal oxide film is weakened by crystallization, and a part of the peeling layer is dissolved in a solution or NF3 After removing the gold by etching using fluoride gas such as BrF3 or ClF3, the weakened gold Furthermore, nitrogen, oxygen, hydrogen, etc. can be used as a peeling layer. A film containing hydrogen (e.g., an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used. The peeling layer is irradiated with laser light to release nitrogen, oxygen, and hydrogen contained in the peeling layer as gas. A method of accelerating the peeling between the peeled layer and the substrate may be used. The substrate is mechanically removed or fluorinated with a solution or fluoride gas such as NF3, BrF3, or ClF3. A method of removing the film by etching or the like can be used. In this case, it is not necessary to provide a peeling layer. stomach.

[0167] Moreover, by combining a plurality of the above-mentioned peeling methods, the peeling step can be carried out more easily. That is, irradiation with laser light, etching of the peeling layer with gas or solution, or using a sharp knife or knife The peeling layer and the layer to be peeled are then mechanically removed using a tool such as a brush to make them easier to peel from each other. Peeling can also be achieved by physical force (mechanically, etc.).

[0168] In addition, the layer to be peeled off can be peeled off from the substrate by penetrating a liquid into the interface between the peeling layer and the layer to be peeled off. Also, during the peeling, liquid such as water may be poured onto the film.

[0169] As for other peeling methods, when the peeling layer is made of tungsten, it is possible to use ammonia water and perchloric acid. The peeling layer may be etched with a mixed solution of hydrogen oxide and water to perform the peeling.

[0170] Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Forming organic resins such as olefin, polyamide, polycarbonate, and acrylic, In this case, the organic resin is heated to form an insulating film, a transistor, etc. The substrate can be peeled off at the interface between the substrate and the organic resin. A metal layer is provided, and the metal layer is heated by passing an electric current through the metal layer, and the metal layer is peeled off at the interface between the metal layer and the organic resin. Separation may also be performed.

[0171] Finally, the insulating layer 255 and the sealing layer 213 are opened to expose the conductive layer 157 ( FIG. 8(B). The plan view at this time is shown in FIG. 13(A). In the case of a configuration in which the conductive layer 157 overlaps the substrate 103 and the adhesive layer 107, the conductive layer 157 is exposed. The opening means is not particularly limited, and may be, for example, laser ablation. A deposition method, an etching method, an ion beam sputtering method, or the like may be used. 157 Make an incision in the upper membrane using a sharp blade or the like, and peel off part of the membrane using physical force. You may do so.

[0172] Through the above steps, a light-emitting device of one embodiment of the present invention can be manufactured.

[0173] As described above, the light-emitting device according to one embodiment of the present invention includes the substrate 103 and the substrate 201 or the substrate The touch sensor is also included in the configuration. By minimizing the number of substrates, the light extraction efficiency can be improved. This makes it easier to improve image quality and clarity of the display.

[0174] This embodiment mode can be combined with other embodiment modes as appropriate.

[0175] (Embodiment 3) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0176] The light emitting device shown in FIG. 9 includes a substrate 401, a transistor 240, a light emitting element 230, an insulating layer 20, and a light emitting device 210. 7, insulating layer 209, insulating layer 211, insulating layer 217, space 405, insulating layer 261, light-shielding layer 2 57, a colored layer 259, a light receiving element (a p-type semiconductor layer 271, an i-type semiconductor layer 273, and an n-type semiconductor layer conductor layer 275), conductive layer 281, conductive layer 283, insulating layer 291, insulating layer 293, It has an insulating layer 295 and a substrate 403 .

[0177] The light emitting device has a light emitting element 230 and a light receiving element surrounded by a substrate 401 and a substrate 403. The adhesive layer, the substrate 401 and the substrate 402 are arranged in a frame shape. The light emitting element 230 is sealed by 03.

[0178] In the light-emitting device of this embodiment, the substrate 403 has a light-transmitting property. is taken out to the atmosphere through the colored layer 259, the substrate 403, etc.

[0179] The light emitting device of the present embodiment is a touch-operable light emitting device. Using this, the proximity or contact of an object to be detected with the surface of the substrate 403 can be detected.

[0180] Optical touch sensors have no effect on detection accuracy even if the surface that the object touches is scratched. Therefore, it is preferable because it has high durability. In addition, optical touch sensors are non-contact sensing. It is possible to apply the same to a display device without reducing the clarity of the image. It is also possible to apply the same to a large light-emitting device or display device. Another advantage is that it can be applied to various installations.

[0181] When the optical touch sensor is provided between the substrate 403 and the space 405, the light emitted by the light emitting element 230 This is preferable because it is less susceptible to influences and can improve the S / N ratio.

[0182] The light-shielding layer 257 is located closer to the substrate 401 than the light-receiving element and overlaps the light-receiving element. The light receiving element 257 can be prevented from being irradiated with light emitted by the light emitting element 230.

[0183] There is no particular limitation on the materials used for the substrate 401 and the substrate 403. The substrate on the side is made of a material that transmits the light. For example, glass, quartz, ceramic, or sapphire The substrate on the side from which light is not extracted is made of a transparent material. In addition to the above-mentioned substrates, substrates using metal materials or alloy materials are also available. A metal substrate or the like may also be used. The substrate materials exemplified in the above embodiment can also be used.

[0184] The method of sealing the light emitting device is not limited, and may be, for example, solid sealing or hollow sealing. For example, sealing materials include glass materials such as glass frit and two-liquid mixed resins. Resin materials such as room temperature curing resin, photocuring resin, and thermosetting resin can be used. The space 405 may be filled with an inert gas such as nitrogen or argon, and may be sealed. It may be filled with the same resin as the layer 213. In addition, the resin may contain the above-mentioned desiccant, refractive index, etc. Fillers having high viscosity or scattering materials may be included.

[0185] This embodiment mode can be combined with other embodiment modes as appropriate. EXAMPLES

[0186] In this example, a light-emitting device according to one embodiment of the present invention will be described.

[0187] In this embodiment, first, the element layer 101, the adhesive layer 105, and the substrate 103 were laminated. The thickness of the laminated structure was 140 μm. The end portion was bent toward the surface opposite to the surface from which the light of the light emitting device is extracted. An insulator 107 covers the side surfaces of the element layer 101, the substrate 103, and the adhesive layer 105. This can prevent impurities such as moisture from entering the element layer 101. 7 reinforces the connection portion 119 between the element layer 101 and the FPC 108, thereby improving the reliability of the light emitting device. It can increase reliability.

[0188] FIG. 10A shows a plan view of the light-emitting device produced in this example. Cross-sectional views between 3-A4 and between A5-A6 are shown in FIG. 10(B).

[0189] In the light-emitting device produced in this example, specific example 2 (FIG. 4( Description of configurations similar to A)) may be omitted.

[0190] As shown in FIG. 10A, the light emitting device of this embodiment includes a light extraction portion 104, a connection portion 112, and a , a gate line driving circuit 113, a gate pad section 114, a source pad section 116, and a connection section 11 9, has an IC 118 for a source line driver circuit and an FPC 108.

[0191] The configuration of the light extraction portion 104 shown in FIG. 10(B) is the same as that shown in FIG. 4(A), and therefore will not be described here. Omitted.

[0192] In the connection portion 112 shown in FIG. 10B, the same material as the lower electrode 231 of the light emitting element 230 is used. A conductive layer 234 and an upper electrode 235, which are fabricated in the same process, are laminated and electrically connected. The upper electrode 235 is connected to the conductive layer 234 in the opening of the insulating layer 211.

[0193] In the gate pad portion 114 shown in FIG. 10B, the same The gate line 241 and the source voltage of the transistor 240 are made of the same material and in the same process. A conductive layer 244 is formed of the same material and in the same process as the electrode and drain electrodes of the light-emitting element 2. A conductive layer 232 made of the same material and in the same process as the lower electrode 231 of the semiconductor device 30 is laminated on the conductive layer 232. The conductive layer 244 is formed on the gate insulating film 242 at an opening portion thereof. The conductive layer 232 is connected to the opening of the insulating layer 207 and the insulating layer 209. It is connected to the conductive layer 244.

[0194] The gate pad portion 114 located at the end of the gate line and the source line The source pad portion 116 can be used in the inspection process of a transistor or in the failure analysis of a light emitting device. For example, in the gate pad section 114, the gate line driving circuit 113 can This allows you to check whether a signal is being input correctly to the input.

[0195] On the conductive layer 232, an upper electrode of the light emitting element 230 is provided via an insulating layer 211 and an insulating layer 217. Here, if the thickness of the insulating layer 211 and the insulating layer 217 is small, the conductive layer 235 is formed. The conductive layer 232 and the upper electrode 235 may come into contact with each other and short out. It is preferable that the thickness of the insulating layer that electrically insulates the electrode layer 232 and the upper electrode 235 is sufficiently large. It is nice.

[0196] FIG. 11 shows a cross section of the gate pad portion 114 by scanning transmission electron microscopy (STEM). The results of observation using a scanning electron microscope (STEM) are shown.

[0197] As shown in the area surrounded by the dotted line, the conductive layer 232 and the upper electrode 235 are in contact with the insulating layer 211 and the insulating It can be seen that the conductive layer 217 is electrically insulated by the laminated structure. This can suppress short-circuiting between the upper electrode 32 and the upper electrode 235, thereby reducing line defects in the light-emitting device. In addition, since the same material is used for the insulating layer 211 and the insulating layer 217, in FIG. The boundary between the insulating layer 211 and the insulating layer 217 is unclear. The material may be formed of a material.

[0198] As shown in FIG. 12(A), the end of the light emitting device (FIGS. 10(A) and 10(B)) is As shown by the dashed line in Figure 13(B), the bending line is parallel to the edge of the board. Here, the substrate 103, the adhesive layer 105, and the end of the element layer 101 are arranged on the element layer 101 side. The curvature radius of the side surface was set to 4 mm. A part of the extraction portion 104) is bent so that the light emitting device can emit light from the side as well.

[0199] As shown in FIG. 13C, the width of the region of the element layer 101 that does not overlap with the substrate 103 is used as a basis. The edge of the element layer 101 may be bent only in the area where it overlaps with the substrate 103. In addition, the width of the entire element layer 101 is made narrower than that of the substrate 103, and the element layer 101 is not bent. It may also be composed of.

[0200] 12(A) is a plan view of the back side (i.e., the side from which light is extracted) of the light emitting device shown in FIG. D).

[0201] Then, the light emitting device deformed into the shape shown in FIG. 12(A) is placed on a mold 299 shown in FIG. The mold is not limited to a one-part structure, and may be, for example, a mold shown in FIG. ) may be made up of multiple parts.

[0202] With the light emitting device placed in the mold 299 (FIG. 12(D)), resin is poured into the mold 299 and allowed to harden. In this embodiment, the resin is an enamel that transmits visible light. An epoxy resin was used.

[0203] As shown in FIG. 2A, the insulator 107 is disposed on the lower surface of the element layer 101 (the surface from which the light of the light emitting device is extracted). Alternatively, as shown in FIG. 2(C), the light emitting device For example, the light-extracting surface of the light-emitting device may be covered. In order to suppress a decrease in the light extraction efficiency of the light emitting device, It is preferable that the insulator 107 is not formed.

[0204] For example, the insulator 107 may be formed while the separate film for protecting the surface of the substrate 103 is still attached. Then, by peeling off the separation film, the surface from which the light of the light emitting device is extracted is This can prevent the insulator 107 from being formed in the region overlapping with the light extraction portion 104 .

[0205] In addition, to reinforce the pressure-bonded part of the FPC 108 on the side where the light from the light emitting device is extracted, It is preferable to form an insulator 107 in the area overlapping with the connection portion 119. The pressure-bonded portion may be reinforced with a resin or tape different from 107.

[0206] As a result, at least a part of the substrate on the side from which light of the light emitting device is extracted is A light-emitting device according to one embodiment of the present invention was fabricated ( FIG. 12E ).

[0207] FIG. 13(E) shows a plan view of the light-emitting device shown in FIG. 12(E) from the light-extracting side. When the edge 107 covers the surface from which light of the light emitting device is extracted, The plan view is shown in FIG.

[0208] 14(A) and (B) show a light-emitting device according to one embodiment of the present invention that was actually manufactured. The thickness was 8000 μm.

[0209] In addition, the light-emitting device according to one embodiment of the present invention can be used for display using a side surface and display not using a side surface (front surface). The display can be switched between the side and front. You can have one image displayed vertically, or one image displayed sideways and frontward, or you can have them switched between the two. It may be possible to do so.

[0210] In addition, one side surface of the substrate 103 is bent toward the element layer 101. FIG 15 shows an example of the light-emitting device 160 according to one embodiment of the present invention as viewed from three directions. A perspective view is shown.

[0211] A portable information terminal 300 using such a light emitting device is shown in Figures 15(B) to (D). FIG. 15(B) is a perspective view illustrating the external shape of the portable information terminal 300. FIG. 15(D) is a top view of the mobile information terminal 300. This is a diagram.

[0212] The mobile information terminal 300 is, for example, one selected from a telephone, an electronic notebook, an information viewing device, etc. Or it has multiple functions. Specifically, it can be used as a smartphone.

[0213] The mobile information terminal 300 can display text and image information on multiple sides. For example, In this case, three operation buttons 109 can be displayed on one surface (FIG. 15(B)). Information 117 shown as a lined rectangle can be displayed on another surface (FIG. 15(C)). An example of notification 117 is a notification from a social networking service (SNS). Content, display notifying the receipt of e-mails or telephone calls, title of e-mails, etc. Such as sender name, date and time, time of day, battery level, antenna reception strength, etc. or In place of the information 117, the operation button 109, the icon In addition, in FIG. 15(B) and (C), information 117 is displayed on the upper side. However, one embodiment of the present invention is not limited to this. As shown in (B), it may be displayed on the side.

[0214] As shown in FIG. 15C, the mobile information terminal 300 can display information on its side. For example, the user may store the mobile information terminal 300 in a breast pocket of his / her clothes. can be confirmed (Figure 15(D)).

[0215] Specifically, the telephone number or name of the caller of the incoming call is displayed on the top of the mobile information terminal 300. The user takes the mobile information terminal 300 out of his / her pocket. This allows you to check the display without having to wait for a call if it is an urgent matter. If the call is not necessary, the call can be rejected.

[0216] The portable information terminal 300 has a vibration sensor and detects vibrations based on the vibrations detected by the vibration sensor. The device may be provided with a storage device that stores a program for switching to a mode for rejecting incoming calls based on the received signal. This allows the user to lightly tap the mobile information terminal 300 on the clothes to give it vibration. This allows the terminal to be switched to a mode in which incoming calls are rejected.

[0217] 16A and 16B show a light-emitting device according to one embodiment of the present invention that was actually manufactured. The configurations of 101, adhesive layer 105, and substrate 103 are the same as those in FIGS. 10(A) and 10(B). [Explanation of symbols]

[0218] 100 Light emitting device 101 Element layer 103 Substrate 104 Light extraction section 105 Adhesive layer 106 Drive circuit section 107 Insulators 108 FPC 108a FPC 108b FPC 109 Operation Button 110 Light emitting device 111 Electricity storage device 112 Connection 113 Gate line driving circuit 114 Gate pad section 115 Protective layer 116 Source Pad Section 117 Information 118 IC 119 Connection 120 Light emitting device 130 Light emitting device 140 Light emitting device 150 Light emitting device 156 Conductive Layer 157 Conductive Layer 160 Light emitting device 201 Substrate 202 Substrate 203 Adhesive layer 205 Insulating layer 207 Insulating Layer 208 Conductive Layer 209 Insulating Layer 209a Insulating layer 209b Insulating layer 211 Insulating layer 212 Conductive layer 213 Sealing layer 215 Connectors 215a Connector 215b Connector 217 Insulating Layer 230 Light-emitting element 231 Lower Electrode 232 Conductive Layer 233 EL layer 234 Conductive Layer 235 Upper electrode 240 Transistor 241 Gate Line 242 Gate insulating film 244 Conductive Layer 255 Insulation Layer 257 Light blocking layer 259 Colored layer 261 Insulating Layer 270 Conductive Layer 271 p-type semiconductor layer 272 Conductive Layer 273 i-type semiconductor layer 274 Conductive Layer 275 n-type semiconductor layer 276 Insulating Layer 278 Insulating Layer 280 Conductive Layer 281 Conductive Layer 283 Conductive Layer 291 Insulating Layer 292 Conductive Particles 293 Insulating Layer 294 Conductive Layer 295 Insulating Layer 296 Conductive Layer 301 Preparation Board 303 Peeling layer 305 Preparation Board 307 Peeling layer 310a conductive layer 310b conductive layer 401 Substrate 403 Substrate 405 Space

Claims

[Claim 1] A device layer; a substrate on the device layer; At least a portion of the substrate is bent toward the element layer, the substrate is transparent and has a refractive index higher than that of air; The element layer is a light emitting device having a light emitting element that emits light toward the substrate.

Images