Film-forming apparatus

Abstract

To provide a film-forming apparatus that can peel a substrate from an electrostatic chuck by a simple constitution.SOLUTION: A film-forming apparatus that forms a film on a substrate via a mask comprises: substrate adsorption means having an adsorption surface onto which the substrate is adsorbed; mask adsorption means including a first adsorption member 401 and a second adsorption member 402 which adsorb the mask to the substrate; and substrate peeling means for generating peel force of peeling the substrate from the substrate adsorption means by relatively moving the first adsorption member 401 and the second adsorption member 402.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] Organic EL display devices (OLED displays) are used in a variety of fields, including smartphones, televisions, automotive displays, and VR HMDs (Virtual Reality Head Mount Displays). The functional layers and electrode layers of an organic EL element are formed by ejecting the film-forming materials that make up each layer toward a substrate in a film-forming device, forming a film on the substrate.

[0003] Patent Document 1 discloses a configuration in which a substrate is attracted to an electrostatic chuck and a pin is used to press the substrate to separate it from the electrostatic chuck in order to perform highly accurate and efficient film formation. Patent Document 2 discloses a configuration in which two or more magnets driven independently are provided as attracting members for attracting a mask to a substrate in order to increase the adhesion between the substrate and the mask and perform highly accurate film formation. In these configurations, a dedicated driving mechanism is provided for driving each of the pins and magnets. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2014-065969 A [Patent Document 2] JP 2019-116679 A Summary of the Invention [Problem to be solved by the invention]

[0005] In order to improve the manufacturing efficiency of devices and to respond to the recent trend toward higher resolution devices, it is preferable to apply the above-mentioned configurations to a film formation apparatus. However, if the number of driving mechanisms increases, the film formation apparatus may become larger and the configuration of the film formation apparatus may become more complicated.

[0006] The present invention has been made in view of the above-mentioned problems, and has an object to provide a film forming apparatus capable of peeling off a substrate from an electrostatic chuck with a simple configuration. [Means for solving the problem]

[0007] The film forming apparatus for forming a film on a substrate through a mask of the present invention comprises: a substrate suction means having an adsorption surface to which the substrate is adsorbed; a mask suction means including a first suction member and a second suction member for suctioning the mask onto the substrate; a substrate peeling means for generating a peeling force for peeling the substrate from the substrate sucking means by moving the first sucking member and the second sucking member relatively to each other; The present invention is characterized by comprising:

[0008] According to the present invention, it is possible to provide a film forming apparatus capable of peeling off a substrate from an electrostatic chuck with a simple configuration. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view showing a schematic configuration of a film forming apparatus according to a first embodiment. [Diagram 2] 4 is an enlarged view of a mask adsorption magnet portion according to the first embodiment. FIG. [Diagram 3] 3 is a cross-sectional view taken along line AA in FIG. 2. [Figure 4] 4 is a flowchart of a film forming operation according to the first embodiment. [Diagram 5] FIG. 4 is an explanatory diagram of a film forming operation according to the first embodiment. [Figure 6] 13A to 13C are explanatory views of a substrate peeling operation according to the second embodiment. [Figure 7]1A to 1C are diagrams illustrating a method for manufacturing an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, and relative positions of the components described in the embodiment may be changed as appropriate depending on the configuration and various conditions of the device to which the invention is applied. In other words, the scope of the present invention is not limited to the following embodiment.

[0011] First Embodiment (Overview of the deposition equipment) A film forming apparatus 1 according to a first embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing a schematic configuration of the film forming apparatus 1. The film forming apparatus 1 is composed of a chamber 2, a film forming source unit 100, a mask holding unit 200, a substrate holding unit 300, a mask adsorption magnet unit 400, and a substrate receiving claw unit 500. In the following description, the X direction will be appropriately defined as the left-right direction in Fig. 1 as the X direction, the depth direction in Fig. 1 as the Y direction, and the up-down direction in Fig. 1 as the Z direction. The X direction, Y direction, and Z direction are mutually orthogonal, the Z direction is the direction of gravity (vertical direction), and the X direction and Y direction are parallel to the horizontal direction.

[0012] The chamber 2 is composed of a chamber side wall 3, a chamber top plate 4, and a chamber bottom plate 5. These are joined together by welding or with a sealing member (not shown) to form the chamber 2, and the inside of the chamber 2 can be maintained in a vacuum environment. The chamber 2 is supported by a support base (not shown). A portion of the support base is installed on the installation floor and supports the chamber 2. In other words, the support base fixes the chamber 2 to the floor.

[0013] A film formation source unit 100 is disposed on the chamber bottom plate 5 of the chamber 2. The film formation source unit 100 discharges a film formation material to form a film on the substrate 8. In FIG. 1, an example of the flow of the film formation material discharged from the film formation source unit 100 is shown by a two-dot chain line. The film formation source unit 100 is mounted on a drive mechanism (not shown) and forms a film while moving. With this configuration, it is possible to form a film uniformly over the entire substrate 8.

[0014] The film forming material discharged from the film forming source unit 100 is deposited on the substrate 8 through the mask 7 disposed above the film forming source unit 100. The mask 7 is composed of a mask frame 7a, which is a thick metal frame, and a thin metal mask foil 7b attached to an opening of the mask frame 7a. The mask foil 7b has a number of minute holes through which the film forming material adheres to the substrate 8. With this configuration, a specific film forming material can be deposited on a targeted position on the substrate 8.

[0015] A mask holding part 200 that holds the mask 7 is installed on the chamber top plate 4. The mask holding part 200 is composed of a plate 201 on which the mask 7 is mounted, and a support pillar 202 for fastening to the chamber top plate 4. The support pillar 202 extends downward in the direction of gravity from the chamber top plate 4, and the plate 201 is connected to its lower end.

[0016] Next, the substrate holding unit 300 will be described. The substrate holding unit 300 is composed of an electrostatic chuck 301 that holds the substrate 8 by electrostatic force, a substrate holding support 302 that supports the electrostatic chuck 301, and an alignment stage (not shown). The electrostatic chuck 301 is a substrate adsorption means that is arranged so as to be able to adsorb and hold the substrate 8, which is the target of film formation, in a face-down state. The down state is a state in which the film formation surface of the substrate 8 faces downward in the direction of gravity. In the first embodiment, the adsorption surface 301a of the electrostatic chuck 301 that adsorbs the substrate 8 is perpendicular to the Z direction and faces downward. The alignment stage is disposed on the atmosphere side (outside the chamber 2) and is composed of an XYθ stage and a Z stage.

[0017] The substrate holding support 302 is disposed between the electrostatic chuck 301 and the alignment stage, and serves to transmit the drive of the alignment stage to the electrostatic chuck 301. The substrate holding support 302 extends from the inside to the outside of the chamber 2. The substrate holding support 302 is also connected to the periphery of the electrostatic chuck 301. A bellows 11 is attached to the portion where the substrate holding support 302 enters the chamber 2, so that the drive of the alignment stage on the atmosphere side can be transmitted to the electrostatic chuck 301 in the vacuum while maintaining the degree of vacuum in the chamber 2. More specifically, the substrate holding support 302 is configured to be able to translate in each of the X, Y, and Z directions by the alignment stage, and to be able to rotate around a rotation axis extending in the Z direction.

[0018] Next, the mask adsorption magnet part 400 will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is an enlarged view of the mask adsorption magnet part 400, and is a view of the mask adsorption magnet part 400 seen in the Y direction. Fig. 3 is an AA cross-sectional view of Fig. 2, and is a view of the mask adsorption magnet part 400 seen in the Z direction. The mask adsorption magnet part 400 is composed of a first magnet 401, a second magnet 402, a magnet support 403, a magnet support 404, a magnet guide 405, a dechuck pin mechanism part 410, and a drive part (not shown).

[0019] In the first embodiment, the mask attracting means for attracting the mask 7 includes a first magnet 401 as a first attracting member and a second magnet 402 as a second attracting member. The first magnet 401 and the second magnet 402 are mask attracting magnets configured by arranging permanent magnets on a magnetic yoke plate. To improve the adhesion between the mask 7 and the substrate 8, it is desirable for each magnet to have a strong magnetic force. As the permanent magnet, it is desirable to use, for example, a neodymium magnet, but this is not limitative. Also, an electromagnet may be used instead of a permanent magnet.

[0020] The first magnet 401 is a square member when viewed in the Z direction. The second magnet 402 is a square member with longer sides than the first magnet 401 when viewed in the Z direction, and has a square opening 402a in the center. The opening 402a is formed larger than the first magnet 401, and the first magnet 401 is disposed inside the opening 402a. The first magnet 401 is disposed at a position corresponding to the center of the mask 7 that is attracted to the substrate 8 held by the electrostatic chuck 301, and the second magnet 402 is disposed at a position corresponding to the edge around the center of the mask 7. The shapes of the first magnet 401 and the second magnet 402 are not limited to squares, and are appropriately changed according to the shapes of the substrate and the mask.

[0021] The first magnet 401 and the second magnet 402 are configured to be movable in the Z direction independently of each other. A magnet support 403 is connected to the upper surface of the first magnet 401, and the first magnet 401 is supported by the magnet support 403. A magnet support 404 is connected to the upper surface of the second magnet 402, and the second magnet 402 is supported by the magnet support 404.

[0022] The magnet support 404 is a hollow member that extends from the inside to the outside of the chamber 2. The magnet support 404 includes a cylindrical portion 404a that extends in the Z direction, a flange portion 404b that extends in a cross shape in the horizontal direction from the lower end of the cylindrical portion 404a, and a flange portion 404b. and a connecting portion 404c extending downward from a tip portion on the outer circumferential side. The connecting portion 404c is connected to the upper surface of the second magnet 402 (the surface opposite to the surface facing the electrostatic chuck 301). The connecting portions 404c extend downward from each tip portion of the cross shape of the flange portion 404b, and in the first embodiment, the magnet support 404 and the second magnet 402 are connected by the connecting portions 404c provided at four locations.

[0023] The magnet support 403 is a cylindrical member disposed inside the hollow portion of the magnet support 404, and its lower end portion is connected to the first magnet 401. The magnet guide 405 is disposed inside the hollow portion of the magnet support 404 together with the magnet support 403, and guides the movement of the magnet support 403 in the Z direction. The magnet guide 405 is disposed between the magnet support 403 and the magnet support 404 in the horizontal direction, and a gap is provided between the magnet support 403 and the magnet support 404 by the magnet guide 405. The magnet support 403 and the magnet support 404 are each connected to a driving unit (not shown), and are configured to be movable in the Z direction independently of each other. With this configuration, the first magnet 401 and the second magnet 402 are supported to be movable independently of each other.

[0024] The dechuck pin mechanism 410 is a substrate peeling means that generates a peeling force for quickly peeling the substrate 8 from the electrostatic chuck 301. The dechuck pin mechanism 410 is mounted on the upper surface of the second magnet 402. The dechuck pin mechanism 410 is composed of a pressing member 411, a dechuck pin arm 412 connected to the pressing member 411, and a rotation shaft 413 that rotatably supports the pressing member 411. The pressing member 411 is a rod-shaped member extending in the Z direction, and is disposed inside a hole 402b, which is a through hole that penetrates the second magnet 402 in the Z direction. The dechuck pin arm 412 is connected to an upper end of the pressing member 411 and supports the pressing member 411. The electrostatic chuck 301 is provided with a hole 301b through which the pressing member 411 can be inserted at a position that overlaps with the hole 402b when viewed in the Z direction. The lower end of the pressing member 411 faces the substrate 8 held by the electrostatic chuck 301 through the hole 301b.

[0025] The pressing member 411 is configured to be movable between a first position where it does not protrude from the electrostatic chuck 301 toward the attracting surface of the electrostatic chuck 301, and a second position where it protrudes from the electrostatic chuck 301 toward the attracting surface of the electrostatic chuck 301. When the pressing member 411 moves downward from the first position to the second position, the tip of the pressing member 411 presses the surface of the substrate 8 held by the electrostatic chuck 301 opposite to the film formation surface. It is desirable that the tip of the pressing member 411 has a shape that is not angular, such as a spherical shape, so as not to damage the substrate 8. Alternatively, it is also preferable that the material of the pressing member 411 is a soft material such as resin.

[0026] The dechuck pin arm 412 is rotatable about a rotation shaft 413 that is fixed to the second magnet 402. When viewed in the Z direction, a second end of the dechuck pin arm 412 opposite to a first end to which the pressing member 411 is connected is disposed at a position overlapping with the first magnet 401. In addition, the rotation shaft 413 is located between the first end and the second end of the dechuck pin arm 412.

[0027] When the first magnet 401 moves upward relative to the second magnet 402, the end of the dechuck pin arm 412 is pushed by the first magnet 401, causing the dechuck pin arm 412 to rotate about the rotation shaft 413. Then, the dechuck pin mechanism 410 moves like a seesaw, causing the end of the dechuck pin arm 412 on the first magnet 401 side to rise and the end on the pressing member 411 side to descend together with the pressing member 411. In this way, the dechuck pin arm 412 rotates in conjunction with the relative movement of the first magnet 401 to the second magnet 402.

[0028] Except during the substrate peeling operation in which the substrate 8 is peeled off from the electrostatic chuck 301, the pressing member 411 needs to be raised to prevent interference between the pressing member 411 and the substrate 8. Therefore, the dechuck pin arm 412 is provided with a spring (not shown) that urges the dechuck pin arm 412 in a direction in which the pressing member 411 rises. The spring may be a torsion spring provided on a rotating portion of the dechuck pin arm 412, or a compression spring or tension spring provided between the dechuck pin arm 412 and the second magnet 402.

[0029] In the first embodiment, four pressing members 411, dechuck pin arms 412, and rotating shafts 413 are provided, each configured as described above. When viewed in the Z direction, the dechuck pin mechanism 410 is disposed at positions where the four dechuck pin arms 412 overlap the four corners of the upper surface of the first magnet 401. When viewed in the Z direction, each dechuck pin arm 412 is disposed along a diagonal line of the second magnet 402, and extends from a corner of the first magnet 401 to a corner of the second magnet 402. When viewed in the Z direction, the four pressing members 411 are provided at positions corresponding to the corners of the substrate 8 held by the electrostatic chuck 301. With this configuration, the four corners of the substrate 8 can be pressed by the pressing members 411, and the substrate 8 can be stably peeled off from the electrostatic chuck 301.

[0030] In the first embodiment, the four pressing members 411 are configured to press the four corners of the substrate 8, but the dechuck pin mechanism 410 is not limited to this configuration. The number and arrangement of the pressing members 411 are preferably set appropriately according to the size and shape of the substrate 8 used in the film forming apparatus 1.

[0031] Next, the substrate receiving claw portion 500 will be described. The substrate receiving claw portion 500 is composed of substrate receiving claws 501, substrate receiving claw supports 502, and a drive unit (not shown). The substrate receiving claws 501 extend horizontally from the lower ends of the substrate receiving claw supports 502, and are substrate support portions that support the outer periphery of the substrate 8. The substrate receiving claws 501 have the role of receiving the substrate 8 transported into the chamber 2 by the robot and transferring it to the electrostatic chuck 301, and the role of receiving the substrate 8 peeled off from the electrostatic chuck 301 and transferring it to the robot.

[0032] The substrate receiving claws 501 are configured to be able to retract from a position supporting the substrate 8 to avoid interference with the mask 7 and the substrate 8 when the mask 7 and the substrate 8 approach each other. Specifically, the substrate receiving claws 501 are connected to a rotation mechanism via substrate receiving claw supports 502, and the substrate receiving claws 501 move due to the rotation of the substrate receiving claw supports 502. With this configuration, the substrate receiving claws 501 move between a support position where they overlap with the substrate 8 when viewed in the Z direction, and a retracted position where they do not overlap with the substrate 8.

[0033] (Operation flow) Next, the film formation operation by the film formation apparatus 1 will be described with reference to Fig. 4 and Fig. 5. The film formation operation is performed by a series of operations including substrate loading, alignment, film formation, and substrate peeling. Fig. 4 is a flowchart of the film formation operation. Fig. 5(a) to (h) are explanatory diagrams of the film formation operation, showing various steps in the film formation operation.

[0034] [Step S01: Substrate loading process] First, in step S01, a robot (not shown) carries the substrate 8 into the chamber 2. The substrate 8 carried by the robot is transferred from the robot to the substrate receiving claws 501 inside the chamber 2.

[0035] [Step S02: Substrate suction process] Next, in step S02, a process of adsorbing the substrate 8 by the electrostatic chuck 301 is performed. FIG. 5(a) shows a state in which the substrate 8 is adsorbed by the electrostatic chuck 301. The substrate receiving claws 501 are raised so that the substrate 8 approaches the electrostatic chuck 301. At this time, the substrate 8 and the electrostatic chuck 301 may or may not be in contact with each other. However, if they are not in contact, the substrate 8 cannot be sucked up if the electrostatic chuck 301 and the substrate 8 are too far apart. Therefore, it is desirable to bring the substrate 8 close to the electrostatic chuck 301 to a position where the distance between the electrostatic chuck 301 and the substrate 8 is 0.3 mm or less. Thereafter, the voltage of the electrostatic chuck 301 is increased, and the substrate 8 is attracted to the attracting surface 301a of the electrostatic chuck 301 by electrostatic force.

[0036] [Step S03: Substrate lowering process] Next, in step S03, a process of lowering the substrate 8 is performed to bring the substrate 8 and the mask 7 closer to each other. Fig. 5(b) shows a state in which the substrate receiving claws 501 have moved to the retracted position, and the substrate 8 held by the electrostatic chuck 301 has lowered to approach the mask 7. In order to prevent the substrate 8 from interfering with the substrate receiving claws 501, the substrate receiving claw support columns 502 rotate prior to the descent of the substrate 8, and the substrate receiving claws 501 move to the retracted position. Then, the electrostatic chuck 301 is lowered, so that the substrate 8 and the mask 7 approach each other in the Z direction.

[0037] [Step S04: Alignment process] Next, in step S04, an alignment process is performed to adjust the relative positions of the mask 7 and the substrate 8. Fig. 5(c) shows an alignment operation of the substrate 8 with respect to the mask 7. In the first embodiment, the electrostatic chuck 301 is moved horizontally and / or rotated with respect to the mask holding part 200, thereby adjusting the relative position of the mask 7 with respect to the substrate 8.

[0038] In the alignment process, first, the XY positions of the alignment marks on the mask 7 and substrate 8 are measured by the alignment camera 10. Next, the amount of relative positional deviation between the mask 7 and substrate 8 is calculated based on the measurement results, the amount of movement of the alignment stage is calculated, and the alignment stage moves. After that, the alignment camera 10 measures the amount of relative positional deviation between the mask 7 and substrate 8, and if it is within the target accuracy, the alignment process is completed. If it is not within the target accuracy, the amount of movement of the alignment stage is recalculated from the measurement results, the alignment stage is moved, and the amount of relative positional deviation is measured again by the alignment camera 10. This operation is repeated until the result of the measurement of the amount of relative positional deviation by the alignment camera 10 is equal to or less than the target value.

[0039] [Step S05: First mask adsorption process] Next, a process of adsorbing the mask 7 to the substrate 8 is performed. FIG. 5(d) shows a state in which the central portion of the mask foil 7b is adsorbed to the substrate 8. In the first embodiment, adsorption of the mask 7 is performed in a first adsorption process in which the central portion of the mask 7 is adsorbed, and a second adsorption process in which the entire surface of the mask 7 is adsorbed. When alignment of the substrate 8 with respect to the mask 7 is completed, the first adsorption process is performed in step S05 in which a part of the mask 7 (the central portion in the first embodiment) is adsorbed and brought into close contact with the substrate 8. In the first adsorption process, the first magnet 401 is lowered, and the central portion of the mask foil 7b is pulled up by magnetic force.

[0040] [Step S06: Second mask adsorption process] After the first attraction step, the second magnet 402 descends and the entire surface of the mask foil 7b is pulled up by magnetic force, and the second attraction step is performed. Fig. 5(e) shows the state where the entire surface of the mask foil 7b is attracted to the substrate 8. In this way, by attracting the central portion of the mask foil 7b to the substrate 8 and then attracting the entire surface of the mask foil 7b to the substrate 8, the mask 7 can be adhered to the substrate 8 without wrinkles, which increases the adhesion between the substrate 8 and the mask 7 and contributes to higher definition devices.

[0041] [Step S07: Film forming process] Next, a film forming process is performed as step S07. 1 shows a state in which a film forming substance is discharged toward the substrate 8 through a mask 7. In the film forming process, a film forming substance is discharged toward the substrate 8 from a film forming source unit 100 provided in the chamber 2. The film forming substance is deposited on the substrate 8 through a mask 7, and a film is formed only at a predetermined position of the substrate 8.

[0042] [Step S08: Mask removal process] Next, in step S08, as part of a preparatory operation for peeling off the substrate 8 from the electrostatic chuck 301, a mask peeling process is performed in which the adsorption of the mask 7 to the substrate 8 is stopped and the mask 7 is peeled off from the substrate 8. As the mask adsorption magnet section 400 rises, the first magnet 401 and the second magnet 402 are separated from the mask 7, and the mask 7 (mask foil 7b) is peeled off and released from the substrate 8. [Step S09: Substrate lifting process] Next, in step S09, a process of lifting the substrate 8 is performed as part of the preparation operation for peeling the substrate 8 from the electrostatic chuck 301. The substrate 8 is lifted together with the mask adsorption magnet section 400, so that a gap of a predetermined width or more is provided between the substrate 8 and the mask 7. Then, the substrate receiving claws 501 are rotated so that the substrate receiving claws 501 are positioned below the substrate 8. This completes the preparation for peeling the substrate 8 from the electrostatic chuck 301. FIG. 5(g) shows a state in which the mask 7 has been peeled off the substrate 8 and the substrate receiving claws 501 are positioned below the substrate 8.

[0043] [Step S10: Substrate peeling process] Next, in step S10, a substrate peeling process is performed in which the substrate 8 is peeled off from the electrostatic chuck 301. FIG. 5(h) shows the state in which the substrate 8 is pressed by the pressing member 411, peeled off from the electrostatic chuck 301, and supported by the substrate receiving claws 501. In the substrate peeling process, first, the mask attraction magnet unit 400 is brought close to the electrostatic chuck 301, and at the same time, the voltage of the electrostatic chuck 301 is set to 0V. Then, the first magnet 401 rises, and one end of the dechuck pin arm 412 on the first magnet 401 side is lifted. Then, the dechuck pin arm 412 rotates about the rotation shaft 413, and the end opposite to the one end of the dechuck pin arm 412 descends together with the pressing member 411. In this way, the pressing member 411 moves from a first position where it does not protrude from the electrostatic chuck 301 toward the attracting surface of the electrostatic chuck 301 to a second position where it protrudes from the electrostatic chuck 301 toward the attracting surface of the electrostatic chuck 301. Then, the pressing member 411 comes into contact with and presses the surface of the substrate 8 opposite to the film formation surface through the hole 301b provided in the electrostatic chuck 301. In this way, in the first embodiment, the pressing member 411 separates the substrate 8 from the electrostatic chuck 301 in conjunction with the operation of the first magnet 401, so that the substrate 8 can be quickly separated.

[0044] Even if the voltage of the electrostatic chuck 301 is set to 0 V, static electricity remains in the electrostatic chuck 301, and therefore the substrate 8 does not immediately separate from the electrostatic chuck 301. However, according to the configuration of the first embodiment, the dechuck pin mechanism 410 can physically peel the substrate 8 from the electrostatic chuck 301. That is, by moving the first magnet 401 relatively to the second magnet 402, a pressing force is generated by the pressing member 411 pressing the substrate 8 as a peeling force for peeling the substrate 8 from the electrostatic chuck 301. As a result, the substrate 8 can be quickly peeled off from the electrostatic chuck 301 without waiting for the electrostatic force remaining in the electrostatic chuck 301 to weaken, and a decrease in production efficiency can be suppressed.

[0045] As described above, in the first embodiment, the substrate 8 can be separated from the electrostatic chuck 301 by moving the first magnet 401 upward relative to the second magnet 402. Therefore, according to the configuration of the first embodiment, it is possible to quickly separate the substrate 8 from the electrostatic chuck 301 without reducing production efficiency and without providing a dedicated driving mechanism for separating the substrate 8 from the electrostatic chuck 301. That is, the substrate 8 can be efficiently separated from the electrostatic chuck 301 with a simple configuration.

[0046] In the first embodiment, the dechuck pin mechanism 410 is configured to press the substrate 8 by the first magnet 401 rising relative to the second magnet 402, but the present invention is not limited to this configuration. For example, a configuration is also possible in which the rotating shaft 413 is fixed to the first magnet 401, and the second magnet 402 rises relative to the first magnet 401, so that the pressing member 411 presses the substrate 8 through a hole provided in the first magnet 401. Also, instead of providing a spring to the dechuck pin arm 412, a configuration is also possible in which an end of the dechuck pin arm 412 is connected to the upper surface of the first magnet 401.

[0047] In the first embodiment, the mask attracting means is composed of the first magnet 401 and the second magnet 402, but the present invention is not limited to this configuration. For example, in order to prevent wrinkles from occurring on the mask 7, the mask attracting means may be composed of three magnets divided in the X direction. Even in this configuration, the mask 7 is attracted in the order of the magnet on one end side, the magnet in the center, and the magnet on the other end side, thereby preventing wrinkles from occurring. The dechuck pin mechanism 410 may be configured so that one magnet is raised relative to the other magnets, causing the pressing member 411 to descend and press the substrate 8, thereby efficiently peeling the substrate 8 from the electrostatic chuck 301 with a simple configuration.

[0048] <Second embodiment> Next, a second embodiment of the present invention will be described. The second embodiment differs from the first embodiment in the method of removing the substrate 8 from the electrostatic chuck 301 during the film forming operation. In the following description of the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof will be omitted, and only the characteristic components of the second embodiment will be described.

[0049] A second embodiment of the present invention will be described with reference to Fig. 6(a) to (c). Fig. 6(a) to (c) are explanatory diagrams of a peeling operation of a substrate 8 according to the second embodiment. The substrate peeling operation described here corresponds to the operation in the substrate peeling process of step S10 in the first embodiment.

[0050] In the second embodiment, a first magnet 401 provided corresponding to the center of a mask 7 presses the center of the electrostatic chuck 301 to deform the electrostatic chuck 301 and peel off the substrate 8. Therefore, the film forming apparatus 1 according to the second embodiment is not provided with a dechuck pin mechanism 410. A driving unit (not shown) that drives a magnet support 403 that supports the first magnet 401 and a magnet support 404 that supports the second magnet 402 functions as a substrate peeling means that generates a peeling force to peel off the substrate 8 from the electrostatic chuck 301.

[0051] 6(a) shows a state in which the substrate lifting step in step S09 is completed and preparations for removing the substrate 8 from the electrostatic chuck 301 are complete.

[0052] In the substrate peeling process, first, the voltage of the electrostatic chuck 301 is set to 0 V. After that, the first magnet 401 is lowered and the electrostatic chuck 301 is pressed by the first magnet 401. FIG. 6(b) shows a state in which the first magnet 401 is pressing the electrostatic chuck 301.

[0053] The first magnet 401, which is provided corresponding to the center of the mask 7, is disposed at a position corresponding to the center of the electrostatic chuck 301. When the first magnet 401 presses the electrostatic chuck 301, the electrostatic chuck 301 is deformed so that the center of the electrostatic chuck 301 becomes convex downward, and a gap is generated between the peripheral portion of the substrate 8 and the electrostatic chuck 301. The force with which the chuck 301 attracts the substrate 8 weakens, and the substrate 8 is released from the electrostatic chuck 301 and is supported by the substrate receiving claws 501 located below the electrostatic chuck 301. Fig. 6(c) shows a state in which the substrate 8 is released from the electrostatic chuck 301 and is supported by the substrate receiving claws 501.

[0054] As described above, in the second embodiment, the driving unit moves only the first magnet 401 downward, so that the first magnet 401 generates a force for pressing and deforming the electrostatic chuck 301 as a peeling force for peeling the substrate 8 from the electrostatic chuck 301. As a result, the substrate 8 can be quickly peeled off from the electrostatic chuck 301 without waiting for the electrostatic force remaining in the electrostatic chuck 301 to weaken, and a decrease in production efficiency can be suppressed.

[0055] As described above, in the second embodiment, the first magnet 401 is moved downward relative to the second magnet 402, thereby allowing the substrate 8 to be separated from the electrostatic chuck 301. Therefore, according to the configuration of the second embodiment, it is possible to quickly separate the substrate 8 from the electrostatic chuck 301 without reducing production efficiency, without providing a dedicated driving mechanism for separating the substrate 8 from the electrostatic chuck 301. In other words, the substrate 8 can be efficiently separated from the electrostatic chuck 301 with a simple configuration.

[0056] In the second embodiment, the mask adsorption means is composed of the first magnet 401 and the second magnet 402, but is not limited to this configuration. For example, in order to prevent wrinkles from occurring on the mask 7, the mask adsorption means may be composed of three magnets divided in the X direction. Even in this configuration, the mask 7 is adsorbed in the order of the magnet on one end side, the magnet in the center, and the magnet on the other end side, thereby preventing wrinkles from occurring. The electrostatic chuck 301 can also be pressed and deformed by the magnet in the center, thereby peeling off the substrate 8 from the electrostatic chuck 301. In this way, the configuration of the present invention is not limited to the above configuration, and various modifications are possible within the scope of the invention embodied in the above embodiment.

[0057] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to the above embodiment will be described. The configuration of an organic EL display device will be shown as an example of the electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0058] First, the organic EL display device to be manufactured will be described. Fig. 7(a) is an overall view of an organic EL display device 800, and Fig. 7(b) shows the cross-sectional structure of one pixel.

[0059] As shown in FIG. 7(a), a plurality of pixels 802 each including a plurality of light-emitting elements are arranged in a matrix in a display region 801 of an organic EL display device 800. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display region 801. In the case of the organic EL display device according to this embodiment, the pixel 802 is configured by a combination of a first light-emitting element 802R, a second light-emitting element 802G, and a third light-emitting element 802B that emit light different from each other. The pixel 802 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0060] Fig. 7(b) is a schematic partial cross-sectional view taken along line BB in Fig. 7(a). A pixel 802 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 804, a hole transport layer 805, one of light-emitting layers 806R, 806G, and 806B, an electron transport layer 807, and a second electrode (cathode) 808 on a substrate 803. Of these, the hole transport layer 805, The light-emitting layers 806R, 806G, and 806B and the electron transport layer 807 correspond to organic layers. In this embodiment, the light-emitting layer 806R is an organic EL layer that emits red light, the light-emitting layer 806G is an organic EL layer that emits green light, and the light-emitting layer 806B is an organic EL layer that emits blue light. The light-emitting layers 806R, 806G, and 806B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0061] In addition, the first electrode 804 is formed separately for each light-emitting element. The hole transport layer 805, the electron transport layer 807, and the second electrode 808 may be formed in common for the plurality of light-emitting elements 802R, 802G, and 802B, or may be formed for each light-emitting element. In order to prevent the first electrode 804 and the second electrode 808 from being shorted by foreign matter, an insulating layer 809 is provided between the first electrodes 804. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 810 is provided to protect the organic EL element from moisture and oxygen.

[0062] 7(b), the hole transport layer 805 and the electron transport layer 807 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 804 to the hole transport layer 805 can be formed between the first electrode 804 and the hole transport layer 805. Similarly, an electron injection layer can be formed between the second electrode 808 and the electron transport layer 807.

[0063] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0064] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 803 on which a first electrode 804 is formed are prepared.

[0065] An acrylic resin is formed by spin coating on the substrate 803 on which the first electrode 804 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 804 is formed, forming an insulating layer 809. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0066] The substrate 803 on which the insulating layer 809 has been patterned is placed on a substrate carrier on which an adhesive member is arranged. The substrate 803 is held by the adhesive member. The substrate is then carried into a first organic material deposition apparatus, and after inversion, a hole transport layer 805 is deposited as a common layer on the first electrode 804 in the display area. The hole transport layer 805 is deposited by vacuum deposition. In practice, the hole transport layer 805 is formed to be larger than the display area 801, so no high-resolution mask is required.

[0067] Next, the substrate 803 on which the hole transport layer 805 has been formed is carried into a second organic material film forming apparatus. The substrate and the mask are aligned, and the substrate is placed on the mask. A red light emitting layer 806R is formed on the portion of the substrate 803 where the red light emitting element is to be disposed.

[0068] Similar to the formation of the light-emitting layer 806R, a light-emitting layer 806G that emits green light is formed by a third organic material film formation apparatus, and further a light-emitting layer 806B that emits blue light is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 806R, 806G, and 806B is completed, an electron transport layer 807 is formed over the entire display region 801 by a fifth film formation apparatus. The electron transport layer 807 is formed as a layer common to the three light-emitting layers 806R, 806G, and 806B.

[0069] The substrate on which the electron transport layer 807 has been formed is moved in a metallic evaporation material deposition device, and a second electrode 808 is deposited.

[0070] Then, the substrate is transferred to a plasma CVD apparatus to form a protective layer 810, and a film formation process is performed on the substrate 803. After the substrate is inverted, the adhesive member is peeled off from the substrate 803, thereby separating the substrate 803 from the substrate carrier. Then, the organic EL display device 800 is completed through cutting.

[0071] If the substrate 803 on which the insulating layer 809 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the formation of the protective layer 810 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0072] 1...film forming apparatus, 301...electrostatic chuck (substrate attracting means), 401...first magnet (first attracting member), 402...second magnet (second attracting member)

Claims

1. In a film forming apparatus for forming a film on a substrate through a mask, a substrate suction means having an adsorption surface to which the substrate is adsorbed; a mask suction means including a first suction member and a second suction member for suctioning the mask onto the substrate; a substrate peeling means for generating a peeling force for peeling the substrate from the substrate sucking means by moving the first sucking member and the second sucking member relatively to each other; A film forming apparatus comprising:

2. the substrate peeling means includes a pressing member that is movable from a first position where the pressing member does not protrude toward the adsorption surface side from the substrate adsorption means to a second position where the pressing member protrudes toward the adsorption surface side from the substrate adsorption means by relatively moving the first adsorption member and the second adsorption member, 2. The film deposition apparatus according to claim 1, wherein the peeling force is a force applied by the pressing member in a direction to separate the substrate from the substrate attracting means.

3. the substrate peeling means includes a rotation shaft extending in a direction parallel to the suction surface and fixed to the second suction member, an arm rotatably supported on the rotation shaft, and a drive mechanism that moves the first suction member and the second suction member independently in a direction perpendicular to the suction surface, The film forming apparatus of claim 2, characterized in that the pressing member is connected to a first end of the arm, the second end of the arm is positioned at a position overlapping the first suction member when viewed in a direction perpendicular to the suction surface, and the rotation axis is positioned between the first end and the second end.

4. The second suction member is provided with a through hole extending in a direction perpendicular to the suction surface, the substrate peeling means includes a hole portion provided at a position overlapping with the through hole when viewed in a direction perpendicular to the suction surface, The film forming apparatus according to claim 3 , wherein at least a portion of the pressing member is disposed inside the through hole.

5. the substrate attracting means includes an electrostatic chuck that attracts the substrate by electrostatic force; the substrate peeling means includes a drive mechanism that moves the first suction member and the second suction member independently in a direction perpendicular to the suction surface, 2. The film forming apparatus according to claim 1, wherein the peeling force is a force that causes the first attracting member to press and deform the electrostatic chuck.

6. 6. The film forming apparatus according to claim 1, wherein the first attraction member and the second attraction member are magnets that attract the mask to the substrate by magnetic force.

7. the first suction member is disposed at a position corresponding to a center portion of the mask suctioned to the substrate, 7. The film forming apparatus according to claim 6, wherein the second chucking member is disposed at a position corresponding to an edge portion around the central portion of the mask chucked to the substrate.

8. the first suction member is disposed at a position corresponding to a center portion of the mask suctioned to the substrate, 6. The film forming apparatus according to claim 1, wherein the second suction member is arranged at a position corresponding to an edge portion around the central portion of the mask suctioned to the substrate.

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