El display device and electronic apparatus

Abstract

To provide a display device with extremely high definition, a display device with higher display quality, a display device with an improved viewing angle characteristic, or a display device that is bendable.SOLUTION: Subpixels with the same color are arrayed in a zig-zag manner with respect to a predetermined direction. That is to say, when a certain subpixel is focused, two subpixels with the same color as the certain pixel are arrayed obliquely on the upper right and lower right or obliquely on the upper left and lower left. One pixel is formed of three subpixels arranged like a letter of L. Two pixels are combined and pixel units each including 3×2 subpixels are arranged in matrix.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, etc. Examples of the present invention include a memory device, a driving method thereof, or a manufacturing method thereof. can. [Background technology]

[0003] In recent years, there has been a demand for high-resolution display devices. In televisions, the resolution is full HD (19 pixels). 20×1080) is the mainstream, but in the future, 4K (3840×21 The increasing resolution of television sets, such as 60) and 8K (7680 x 4320 pixels) is expected to progress.

[0004] On the other hand, mobile information terminal devices such as mobile phones, smartphones, and tablet terminals In recent years, display panels used in the display units of such devices have become increasingly higher in resolution.

[0005] Representative display devices include liquid crystal displays and organic EL (Electro Luminescence) displays. escence elements and light emitting diodes (LEDs) Light-emitting devices equipped with light-emitting elements such as OLEDs, and electronic paper that displays information using electrophoresis, etc. etc.

[0006] For example, the basic structure of an organic EL element is a layer containing a light-emitting organic compound between a pair of electrodes. By applying a voltage to this element, light is emitted from the light-emitting organic compound. A display device to which such an organic EL element is applied is called a liquid crystal display device. Since it does not require a backlight, which was previously necessary in some devices, it is thin, lightweight, has high contrast, and consumes less power. A power-saving display device can be realized. For example, an example of a display device using an organic EL element is This is described in reference 1. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2002-324673 A Summary of the Invention [Problem to be solved by the invention]

[0008] For example, the display panel mounted on a portable information terminal device has a larger display area than a television device. Because the area of ​​the region is small, greater fineness is required to increase the resolution.

[0009] An object of one embodiment of the present invention is to provide a display device with extremely high definition. Another object of the present invention is to provide a display device with improved display quality. It is an object of the present invention to provide a display device having improved characteristics. It is an object of the present invention to provide a display device that can be bent. Another object of the present invention is to provide a highly reliable display device. Another object of the present invention is to provide a display device having a novel structure.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. It is possible to extract issues other than those mentioned above. [Means for solving the problem]

[0011] One embodiment of the present invention is a display device having a plurality of pixel units. are arranged in a matrix shape along a first direction and a second direction intersecting the first direction. The pixel unit includes first to sixth display elements. The first display element, the second display element, and the fifth display element are arranged in sequence along the first direction. The first, fourth and sixth display elements are arranged in order along the first direction. the display element and the second display element, the third display element and the fourth display element, and the fifth display element The first and sixth display elements are arranged in the second direction. The display element is a display element that exhibits a first color, and the second display element and the fifth display element are a display element that exhibits a second color, and the third and sixth display elements that exhibit a third color It is a display element.

[0012] In the above, it is preferable that the device further includes a first wiring and a second wiring. The pixel unit has first to sixth transistors, and the first transistor, the third transistor The gates of the first transistor and the fifth transistor are electrically connected to the first wiring. , the gates of the second transistor, the fourth transistor, and the sixth transistor It is preferable that the insulator is configured to be electrically connected to the second wiring.

[0013] In the above, it is preferable to have a third wiring, a fourth wiring, and a fifth wiring. When one of the source and the drain of each of the first transistor and the second transistor is is electrically connected to the third wiring, and One of the source and the drain is electrically connected to a fourth wiring. Either the source or the drain of each of the sixth transistors is electrically connected to a fifth wiring. It is preferable to have such a configuration.

[0014] Alternatively, in the above, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring may be provided. In this case, it is preferable that the sources of the first transistor and the fourth transistor are One of the drains is electrically connected to the fourth wiring and is the source or drain of the second transistor. One of the inputs is connected to the third wiring, and the sources of the third transistor and the sixth transistor are connected to the third wiring. One of the source and drain of the fifth transistor is electrically connected to a fifth wiring. It is preferable that one of the drains is electrically connected to the sixth wiring.

[0015] In the above, the width of the arrangement period of the plurality of pixel units in the first direction is In this case, it is preferable that the width of the pixel unit is twice the width of the array period in the direction of the pixel unit. It is preferable that the width of the arrangement period in the first direction is 12 μm or more and 150 μm or less. stomach.

[0016] The first to sixth transistors are transistors having a top gate structure. In this case, it is preferable to have a seventh transistor electrically connected to the first display element. It is preferable that the seventh transistor has two gate electrodes sandwiching a semiconductor layer. It is more preferable to adopt such a configuration.

[0017] Another aspect of the present invention is a display device including a plurality of first display elements, a plurality of second display elements, and a plurality of third display elements. The display device has three display elements. The first display element is a display element that exhibits a first color. The second display element is a display element exhibiting a second color, and the third display element is a display element exhibiting a third color. The display element has a first row and a second row extending in a first direction. The first row, the second row, and the third row are oriented in a direction perpendicular to the first direction. The first display element is arranged in the second direction in this order. and the second display element are arranged alternately in a row, and the second row is a row including a third display element and a first The third column is a row in which the first display element and the second display element are alternately arranged, and the third column is a row in which the second display element and the third display element are alternately arranged. The first display element in the first column and the third display element in the second column are arranged alternately. A second display element in a third column and a second display element in a third column are aligned in the second direction.

[0018] In the above, it is preferable that the display further includes a signal line and a scanning line. The first direction is a direction parallel to the extension direction of either the signal lines or the scanning lines, and the second direction is It is preferably a direction parallel to the other stretching direction. Effect of the Invention

[0019] According to one embodiment of the present invention, a display device with extremely high definition can be provided. It is possible to provide a display device having improved viewing angle characteristics. Alternatively, a display device having an increased aperture ratio can be provided. A display device having a high reliability can be provided. It is possible to provide a display device having such a configuration. [Brief description of the drawings]

[0020] [Figure 1] 1 shows a configuration example of a display device according to an embodiment. [Diagram 2] 1 shows a configuration example of a display device according to an embodiment. [Diagram 3] 1 is a circuit diagram of a display device according to an embodiment. [Figure 4] 1 is a circuit diagram of a display device according to an embodiment. [Diagram 5] 1 is a circuit diagram of a display device according to an embodiment. [Figure 6] 1 is a circuit diagram of a display device according to an embodiment. [Figure 7] 1 is a circuit diagram of a display device according to an embodiment. [Figure 8] 1 is a circuit diagram of a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1 shows a configuration example of a display device according to an embodiment. [Figure 11] 1 shows a configuration example of a display device according to an embodiment. [Figure 12] 1 shows a configuration example of a display device according to an embodiment. [Figure 13] 1 shows a configuration example of a display device according to an embodiment. [Figure 14] 1 shows a configuration example of a display device according to an embodiment. [Figure 15] 1 shows a configuration example of a display device according to an embodiment. [Figure 16] 1 shows a configuration example of a display device according to an embodiment. [Figure 17] 1 shows a configuration example of a display device according to an embodiment. [Figure 18] 1 shows a configuration example of a display device according to an embodiment. [Figure 19] 1 shows a configuration example of a display device according to an embodiment. [Figure 20]1 shows a configuration example of a display device according to an embodiment. [Figure 21] 1 shows a configuration example of a display device according to an embodiment. [Figure 22] 1 shows a configuration example of a display device according to an embodiment. [Diagram 23] 3 shows a configuration example of a touch panel according to an embodiment. [Figure 24] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Diagram 25] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 26] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 27] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 28] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 29] 1 is an electronic device according to an embodiment. [Diagram 30] 1 is an electronic device according to an embodiment. [Diagram 31] 1 is an electronic device according to an embodiment. [Diagram 32] 1 is an electronic device according to an embodiment. [Diagram 33] 1 is an electronic device according to an embodiment. [Diagram 34] 3 shows an example of the configuration of a transistor according to the first embodiment. [Diagram 35] 3 shows an example of the configuration of a transistor according to the first embodiment. [Diagram 36] 4 shows electrical characteristics of a transistor according to the first embodiment. [Figure 37] 1 shows the configuration of a light-emitting element according to a second embodiment. [Figure 38] 6 shows electrical characteristics of the light-emitting element according to Example 2. [Figure 39] 5A to 5C are diagrams illustrating a method for manufacturing a display panel according to Example 2. [Diagram 40] 11 is a photograph of a display panel according to the second embodiment. [Diagram 41] FIG. 11 is a chromaticity diagram of a display panel according to the second embodiment. [Diagram 42]13 shows viewing angle dependence of chromaticity of a display panel according to Example 2. [Diagram 43] 11 is a photograph of a display panel according to Example 3. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatching pattern is the same and no particular symbol is attached. .

[0023] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0024] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0025] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0026] In addition, the functions of "source" and "drain" may differ when using transistors with different polarities. In some cases, such as when the direction of the current changes during circuit operation, the two may be interchanged. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably. It is possible.

[0027] (Embodiment 1) In this embodiment, a structure example of a display device according to one embodiment of the present invention will be described.

[0028] A display device according to one embodiment of the present invention has a plurality of pixels. Each pixel has a plurality of sub-pixels. Each sub-pixel includes a display element and a pixel circuit. The display element of each sub-pixel includes: Each pixel circuit has at least one transistor. The pixel has at least one electrode (also called a pixel electrode), which is electrically connected to the pixel circuit. The transistor in each pixel circuit is a switch for selecting the corresponding sub-pixel. The pixel circuit has a function as a selection transistor. In addition to transistors, other transistors, capacitance elements, diodes, and other elements, The components may have wiring or the like for connecting between them.

[0029] In one aspect of the present invention, a pixel unit is composed of two adjacent pixels. That is, each pixel unit has two sub-pixels that exhibit the same color. For example, if a pixel has three colors (e.g. For example, if a pixel unit has red (R), green (G), and blue (B) sub-pixels, it has six sub-pixels. The pixel is composed of sub-pixels.

[0030] When a pixel unit has six sub-pixels, three are arranged in the first direction and two in the second direction. In this case, it is preferable that the sub-pixels are arranged in a 3×2 matrix. It is preferable that one pixel is composed of three sub-pixels forming an L shape.

[0031] Also, sub-pixels of the same color are not aligned in a line in the second direction, but are displaced in a grid in the second direction. It is preferable that the pixels are arranged in a staggered manner. Two sub-pixels that exhibit the same color are located diagonally to the upper right and lower right, or diagonally to the upper left and It is preferable to arrange the display so that the display is located at the bottom left. This allows for extremely high-definition display. Therefore, even in a large-area display, it is possible to reduce the change in chromaticity when the viewing angle is changed.

[0032] For example, when the display device has three types of display elements of R, G, and B, the first direction is The following three types of rows may be arranged in order along the first direction. The first row is a row of R and G alternating in a second direction, and the second row is a row of G and B alternating in a second direction. The third row is a row in which B and R are alternately arranged in the second direction. And The three columns are arranged such that display elements of the same color are not adjacent to each other in the first direction. Specifically, two display elements adjacent to each other in the first direction of R are arranged in a row. The first row, the second row, and the third row are arranged so that one row is G and the other row is B. It is possible.

[0033] In the display device according to one embodiment of the present invention, a gate of a selection transistor included in a pixel circuit is supplied with a voltage. The device has multiple wirings (also called gate lines) that are electrically connected to the This controls the on / off state of the selection transistor, thereby controlling the selection state of the subpixel. can.

[0034] In one embodiment of the present invention, a pixel has two or more sub-pixels, and a pixel has two or more lines and The number of gate lines is equal to or less than the number of sub-pixels per pixel and is electrically connected. At least one of the sub-pixels of the pixel is electrically connected to each of the plurality of gate lines. The configuration will be as follows.

[0035] As an example, a pixel has three sub-pixels and two gate lines are electrically connected to the pixel. More specifically, one of the gate lines is connected to the two sub-pixels. The other gate line is electrically connected to the gate of each selection transistor. The gate of the selection transistor is electrically connected to the gate of the selection transistor.

[0036] By configuring the pixel of the display device according to one embodiment of the present invention as described above, the occupancy rate of the pixel is This makes it easier to reduce the area, and as a result, the resolution of the display device can be improved. Below, we will explain one of the reasons why the pixel area can be reduced by using the above pixel configuration. explain.

[0037] In order to increase the resolution of a display device, it is necessary to reduce the area occupied by one pixel. For example, One way to reduce the area occupied by a pixel is to reduce the minimum feature size and the position between different layers. One method is to reduce the design rules stipulated by factors such as alignment accuracy. However, a significant reduction in design rules depends in large part on improvements in the performance of manufacturing equipment. For example, the cost of developing the technology for manufacturing equipment such as exposure machines is extremely huge. In addition, even if new manufacturing equipment is developed, it will take a huge amount of time to replace the existing equipment. This will require significant capital investment.

[0038] For comparison, a pixel has three sub-pixels, and each of the three sub-pixels is connected to one gate line. Consider the case where each selection transistor is connected. In this case, the gate line is preferably in the extending direction of each sub-pixel. For example, three pixel circuits are arranged in a square shape. In this case, the ratio of the length of the pixel circuit in the direction in which the gate line extends to the length in the direction perpendicular to the direction in which the gate line extends is The image must fit within a rectangle with a ratio of approximately 1:3. When the pixel shape is a square, the gate line extension direction must be increased in order to reduce the pixel area. Instead of reducing only one of the length of the target and the length in the direction perpendicular to the target, both needs to be reduced to the same extent.

[0039] When manufacturing pixel circuits, there are design rules for the process, so The size of the elements, electrodes, and contact holes, the width of the wiring connecting the elements, and the distance between the two elements The spacing between the elements and the wiring, as well as the spacing between the elements and the wiring, cannot be made smaller than a certain value. In order to fit the pixel circuit into the rectangular area, the area occupied by the elements, wiring, etc. is reduced. No matter how much effort is put into arranging the gate lines, the length of the short side of the rectangle is It is difficult to reduce the length in the stretching direction to the same extent as the length in the long side direction. For each pixel circuit, it is necessary to provide at least one wiring that crosses the gate line at right angles. In the direction in which the gate lines extend, wiring and other structures are densely arranged compared to the direction perpendicular to the direction. Therefore, it is more difficult to reduce the length of the gate line of the pixel circuit in the extension direction. do.

[0040] In the pixel according to one embodiment of the present invention, the number of pixel circuits arranged in the extension direction of the gate line can be reduced. Therefore, the length of the pixel in the extension direction of the gate line can be made shorter than in the above-mentioned configuration. Furthermore, the wiring perpendicular to the gate line is arranged in the pixel circuit of each pixel. Since it is possible to share the same signal between two pixel circuits connected to different gate lines, The number of lines perpendicular to the gate lines can be reduced, and the extension direction of the gate lines of the pixels can be reduced. It is therefore easy to make the length of the wire shorter.

[0041] In addition, one embodiment of the present invention has a pixel unit in which a pair of pixels are combined. More specifically, two pixel circuits are connected to a first gate line, and a second A first pixel having one pixel circuit connected to a gate line, and a second pixel having one pixel circuit connected to the first gate line. a second pixel having two pixel circuits connected to a second gate line; The pixel unit may have six pixel circuits, for example. For example, the ratio of the length of the gate line in the extension direction to the length in the direction perpendicular to the gate line is approximately 2:1. It is preferable that the pixel circuit is arranged so as to fit within a rectangle. This allows the pixels to be arranged more efficiently and densely, further reducing the area occupied by the pixels. In addition, compared to the comparative configuration shown above, the number of gate lines connected to a pair of pixels is reduced. It is possible to reduce the number of wirings that intersect at right angles to at least two.

[0042] In the display device according to one embodiment of the present invention, the area occupied by the pixel can be made extremely small. Therefore, a display device having a very high-definition pixel portion can be realized. For example, the resolution of the pixel portion is For example, 400ppi to 3000ppi, or 500ppi to 3000ppi Preferably, 600 ppi or more and 3000 ppi or less, more preferably 800 ppi or less. At most 3000 ppi, and more preferably at least 1000 ppi and no more than 3000 ppi For example, a display device with a resolution of 1058 ppi can be realized.

[0043] Such high-definition display devices are used in, for example, mobile phones, smartphones, tablet terminals, etc. Relatively small electronic devices such as portable information terminal devices, wearable devices such as smart watches, etc. It can be used effectively for child devices. It can also be used for camera finders, HMDs (Head-Mounted Displays), etc. It can also be used for medical applications. The present invention can also be suitably used in display devices and the like.

[0044] More specifically, one embodiment of the present invention can have the following configuration, for example.

[0045] [Configuration example] A structural example of a display device according to one embodiment of the present invention will be described below.

[0046] [Example of the configuration of the display device] FIG. 1A is a schematic top view of a display device 10 to be described below. Element 11, circuit 12, circuit 13, terminal 15a, terminal 15b, wiring 16a, wiring 16b 1A, the display device 10 is provided with an IC 17. The following shows an example of this.

[0047] The pixel section 11 has a plurality of pixels and has a function of displaying an image.

[0048] The circuit 12 and the IC 17 output signals for driving the pixels to the pixels in the pixel section 11. For example, the circuit 12 functions as a gate driver circuit. For example, IC17 is a circuit that functions as a source driver circuit. Here is an example where two circuits 12 are provided on either side of 1, and six ICs 17 are mounted. In addition, an IC that functions as a gate drive circuit is mounted, and the circuit 12 is not provided. Also, a source driver circuit may be provided and IC 17 may not be mounted.

[0049] In addition, ICs and FPCs (Flexible Printed Circuits) are mounted on the board. The form in which the FPC and IC are not mounted can also be called a display module. Such a configuration can also be called a display panel.

[0050] The circuit 13 has a function of distributing one of the signals input from the IC 17 to two or more wirings. By providing circuit 13, IC1 The number of signals output by IC 7 can be reduced, and the number of terminals of IC 17 can be reduced. The number of parts can be reduced, especially when realizing extremely high-resolution display devices such as 4K and 8K. In this case, it is particularly effective to provide the circuit 13. If the circuit 13 is not necessary, it is not necessary to provide it. good.

[0051] The terminal portion 15a and the terminal portion 15b are provided with a plurality of terminals, and are used to connect an FPC, other ICs, etc. Each terminal of the terminal portion 15a can be connected to the circuit 1 via one of the multiple wirings 16a. Each terminal of the terminal portion 15b is electrically connected to I The output terminals of IC17 are electrically connected to the The wiring 16c is electrically connected to the circuit 13.

[0052] FIG. 1B is a schematic top view showing an example of a method for arranging pixel electrodes in the pixel section 11. As shown in FIG. The pixel section 11 has a plurality of pixel units 20. FIG. 1B shows four pixel units The pixel unit 20 includes a pixel 21a and a pixel 21b. The pixel 21a has a pixel electrode 31a, a pixel electrode 32a, and a pixel electrode 33a. The pixel 21b has a pixel electrode 31b, a pixel electrode 32b, and a pixel electrode 33b. The electrodes function as electrodes of a display element, which will be described later. The pixel electrode is located inside the pixel electrode of the sub-pixel.

[0053] The six pixel electrodes of the pixel unit 20 are arranged in a matrix of two vertical rows and three horizontal rows. Here, the pixel electrode 31a, the pixel electrode 32a, and the pixel electrode 33a are respectively The pixel electrode 31b can be used as an electrode for a display element that exhibits different colors. 1a, pixel electrode 32b is connected to pixel electrode 32a, pixel electrode 33b is connected to pixel electrode 33a, and Each of these electrodes can be used as a display element that exhibits the same color. Although the poles are shown to be the same size, they may be different sizes. The size of the display area 22 on the pixel electrodes may be made different.

[0054] For ease of explanation, the pixel electrode 31a is a display element that exhibits red (R). Similarly, the pixel electrode 32a is a display element that exhibits green (G). The pixel electrode 33a is an electrode of a display element that exhibits blue (B) and is designated by the symbol B. Note that the pixel arrangement shown in FIG. 1B etc. is just an example, and the present invention is not limited to this. In addition, R, G, and B can be interchanged. Alternatively, a pixel array in which the pixel array is inverted horizontally or vertically may be used.

[0055] For example, in a conventional display device, the three color display elements of R, G, and B are arranged in one There is a method of arranging three rectangular display elements in a square. A so-called stripe arrangement in which display elements of the same color are arranged in one direction between adjacent pixels In this arrangement, adjacent display elements that exhibit two different colors are arranged in a row. In particular, in the case of extremely high-resolution display devices, the long sides of the display panels are arranged side by side. In this case, the distance between adjacent subpixels becomes shorter, so the light emitted from the display element of a certain subpixel However, the light passes through the color filter of the adjacent subpixel, causing color mixing when viewed from an oblique angle. If color mixing occurs, the image displayed in the pixel section 11 may be blurred (also called poor viewing angle characteristics). The color reproducibility of the displayed image is reduced. Since the length of the short side of the substrate is shortened, the substrate on which the color filter is formed and the substrate on which the pixel electrode is formed are Even a slight misalignment when bonding the substrates together can result in a significant decrease in aperture ratio and poor color reproducibility. This significantly increases the influence on the deterioration of the sensor. Therefore, the tolerance for misalignment becomes extremely small. This may result in a significant decrease in yield when manufacturing display panels.

[0056] In contrast, in a display device according to one embodiment of the present invention, pixel electrodes are arranged as shown in FIG. By doing so, the shape of the area occupied by one sub-pixel is changed from the stripe shape described above. A shape that is close to a square, i.e., the length of the long side is less than 3 times the length of the short side. This allows the sub-pixels of different colors to be aligned in a single pixel even if they have the same resolution. It is possible to shorten the length of the side. Also, by adopting such a shape, the same opening Even if the pixel ratio is small, the distance between adjacent display elements can be made sufficiently large. Not only does this improve the viewing angle characteristics, but it also increases the tolerance for the above-mentioned misalignment of the substrates. Yield is improved.

[0057] Here, the pixel electrode arrangement shown in FIG. 1B and the above-mentioned stripe pattern are used. How much of an effect does a misalignment of the board have when using a different type of arrangement method? First, let us consider the pixel resolution of 1058 ppi (pixel pitch 24μ). m), in the stripe array, the length of the short side of the area occupied by one sub-pixel (i.e. The length of the long side (i.e., the pitch in the horizontal direction) is 8 μm, and the length of the long side (i.e., the pitch in the vertical direction) is 24 μm. On the other hand, in the arrangement shown in FIG. 1B, the horizontal pitch of the pixel units 20 is 48 μm. m, the vertical pitch is 24 μm, and the length of the short side of the area occupied by one sub-pixel (i.e. The length of the long side (i.e., the pitch in the vertical direction) is 12 μm, and the length of the long side (i.e., the pitch in the horizontal direction) is 16 For these two, the substrate on which the display element is formed and the substrate on which the color filter is formed are When the substrate on which the display is mounted is misaligned by 2 μm, the maximum light emitted by one display element can be emitted without loss. The large angle (front direction is set as 0 degree) was estimated. As a result, in the case of stripe arrangement, In the arrangement shown in FIG. 1(B), the angle was approximately 5.4 degrees, whereas in the arrangement shown in FIG.

[0058] In this way, in the case of a very high-definition display device, the arrangement method shown in FIG. By doing so, not only can we achieve a high viewing angle, but we can also improve the manufacturing yield. do.

[0059] FIG. 1C is a circuit diagram showing an example of how pixel circuits are arranged in the pixel section 11. FIG. 1C shows four pixel units 20. The pixel 21a includes a pixel circuit 41a and a pixel The pixel 21b includes a pixel circuit 41b, a pixel circuit 42a, and a pixel circuit 43a. The pixel section 11 also includes a wiring 51a, a wiring 51b, Wiring 52a, wiring 52b, wiring 52c, wiring 53a, wiring 53b, wiring 53c, etc. are arranged. It is being done.

[0060] The wiring 51a and the wiring 51b are electrically connected to the circuit 12 shown in FIG. The wiring 52a, the wiring 52b, and the wiring 52c function as gate lines (also referred to as scan lines). The lines 52c are electrically connected to the circuit 13 shown in FIG. 1A and serve as signal lines (data lines The wiring 53a, the wiring 53b, and The wiring 53c has a function of supplying a potential to the display element.

[0061] The pixel circuit 41a is electrically connected to the wiring 51a, the wiring 52a, and the wiring 53a. The pixel circuit 42a is electrically connected to the wiring 51b, the wiring 52a, and the wiring 53a. The pixel circuit 43a is electrically connected to the wiring 51a, the wiring 52b, and the wiring 53b. The pixel circuit 41b is electrically connected to the wiring 51b, the wiring 52b, and the wiring 53b. The pixel circuit 42b is electrically connected to the wiring 51a, the wiring 52c, and the wiring 53c. The pixel circuit 43b is electrically connected to the wiring 51b, the wiring 52c, and the wiring 53c. This is being continued.

[0062] The pixel circuit 41a is electrically connected to the pixel electrode 31a. a is the pixel electrode 32a, the pixel circuit 43a is the pixel electrode 33a, and the pixel circuit 41b is the pixel electrode 31b, the pixel circuit 42b has a pixel electrode 32b, the pixel circuit 43b has a pixel electrode 33b, In FIG. 1C, the pixel electrodes shown in FIG. 1B and the pixel To make it easier to understand the correspondence with the circuits, the symbols R, G, and B are given to each pixel circuit. For ease of explanation, the pixel circuit and the pixel electrode are described separately here. The pixel electrode may be part of a pixel circuit, or the pixel circuit may include a display element. stomach.

[0063] As shown in FIG. 1C, by configuring one pixel to have two gate lines connected, Conversely, the number of signal lines (source lines) can be halved compared to the stripe arrangement. This makes it possible to reduce the number of ICs 17 used as source driver circuits by half. This allows the number of parts to be reduced.

[0064] In FIG. 1C, one pixel unit 20 has a wiring (wiring 5) that functions as a signal line. 2a to 2c) are electrically connected, but as shown in FIG. 2(A), The lines may be electrically connected to the pixel units 20 .

[0065] In FIG. 2A, the wiring 52d is electrically connected to the pixel circuit 42a. The wiring 52a is electrically connected to the pixel circuit 41a and the pixel circuit 41b. The wiring 52c is electrically connected to the pixel circuit 43a and the pixel circuit 43b. 2b. In the adjacent pixel units, the wiring 52c is shared. Therefore, the wiring 52c in the pixel unit 20 is connected to the wiring 52d in the adjacent pixel unit. is equivalent to.

[0066] In this way, pixel circuits corresponding to the same color are connected to a single wiring that functions as a signal line. For example, in order to correct the luminance variation between pixels, If a regulated signal is fed to the wiring, the correction values ​​may vary significantly for each color. Therefore, all pixel circuits connected to one signal line correspond to the same color. This makes it possible to easily perform correction.

[0067] In the configuration shown in FIG. 2A, the row direction (the extension direction of the wiring 51a and the wiring 51b) When the number of pixel circuits arranged in is n, the number of wirings (such as wiring 52a) that function as signal lines is n. The number of wirings functioning as a plurality of signal lines provided in the pixel section 11 is n+1. The two wires (the 1st and n+1th wires) at both ends of the In the case of 2(A), the pixel circuit corresponding to G) is connected. As shown in FIG. 2A, these two wirings (wire 52d and wire 52b in FIG. 2A) located at both ends of the pixel section 11 are , the rightmost wiring 52c) is, for example, a wiring 54 located outside the pixel portion 11. When the signal line driver circuit is electrically connected to the output signal This is preferable because it does not increase the number.

[0068] As shown in FIG. 2B, two types of pixel units 20 are arranged in the extension direction of the wiring 52a, etc. The wirings 52a and the like may be arranged alternately along the line. The element units 20 are arranged in line symmetry with respect to the extending direction of the wiring 51a, etc. With this configuration, the sub-pixels are arranged in the extending direction of the wiring 52a, etc. Since two sub-pixels of the same color are adjacent to each other, there is little tolerance for misalignment between the color filter and the display element. The range can be made large.

[0069] [Example of pixel circuit configuration] A more specific example of the pixel circuit of the pixel unit 20 will be described below. FIG. 3 shows an example of a circuit diagram of the pixel unit 20. In FIG. 3, as shown in FIG. In the case where four wirings (such as wiring 52a) functioning as signal lines are connected to the pixel unit 20, The following shows an example of the case.

[0070] The pixel 21a includes a sub-pixel 71a, a sub-pixel 72a, and a sub-pixel 73a. The pixel includes subpixels 71b, 72b, and 73b. For example, the subpixel 71a includes a pixel circuit 41a and a display element 60. Here, a case where a light-emitting element such as an organic EL element is used as the display element 60 is shown.

[0071] Each pixel circuit includes a transistor 61, a transistor 62, a capacitance element 63, For example, in the pixel circuit 41a, the gate of the transistor 61 is connected to the wiring 51. a, one of the source and drain is electrically connected to the wiring 52a, and the source The other of the drains is electrically connected to the gate of the transistor 62 and one of the electrodes of the capacitor 63. The transistor 62 has a source or a drain that is connected to one of the display elements 60. The other of the source and drain is electrically connected to the other electrode of the capacitor 63, and The other electrode of the display element 60 is electrically connected to the wiring 53a. The other pixel circuits are electrically connected to the wiring as shown in FIG. A wiring to which the gate of the transistor 61 is connected, one of the source and drain of the transistor 61 The pixel circuit is the same as the pixel circuit except that the wiring to which the capacitor element 63 is connected and the wiring to which the other electrode of the capacitor element 63 is connected are different. It has a similar configuration to path 41a.

[0072] In FIG. 3, a transistor 61 functions as a selection transistor. The transistor 62 is connected in series with the display element 60 and serves to control the current flowing through the display element 60. In FIG. 3, a transistor 61 that functions as a selection transistor and a display One electrode (pixel electrode) of the element 60 is electrically connected via a transistor 62. The capacitance element 63 is connected to the gate of the transistor 62. The transistor 61 has a function of holding the potential of the node connected to the transistor 61 in the off state. When the peak current, the leakage current through the gate of the transistor 62, etc. are extremely small, The capacitance element 63 does not necessarily have to be provided.

[0073] As shown in FIG. 3, the transistors 62 are each electrically connected to a first gate. It is preferable to have a structure having a first gate and a second gate. By adopting this configuration, the current that the transistor 62 can pass can be increased. In particular, in a high-definition display device, the size of the transistor 62, particularly the channel width, is increased. This is preferable because it allows the current to be increased without increasing the capacitance.

[0074] As shown in FIG. 4A, the transistor 62 has one gate. With this configuration, the step of forming the second gate is not necessary, The process can be simplified as compared to the above. A configuration having two gates is also possible. By using such a configuration, The size of the transistors can also be reduced. The first gate and the second gate are electrically connected to each other, but one of the gates is different. In this case, the potential applied to the wiring may be different. By this, the threshold voltage of the transistor can be controlled.

[0075] In addition, one of the pair of electrodes of the display element 60 is electrically connected to the transistor 62. 3 and 4(A) ( In B), the electrode electrically connected to the transistor 62 of the display element 60 is the cathode, and the opposite electrode This configuration is used when the transistor 62 is an n-channel type. This is particularly effective when the transistor 62 is in the on state. Since the potential provided by the wiring 53a becomes the source potential, the resistance of the display element 60 is not uniform. The current flowing through the transistor 62 can be kept constant regardless of fluctuations or fluctuations.

[0076] As shown in FIG. 5A, the electrode of the display element 60 on the side of the transistor 62 is set as an anode. The electrode on the opposite side may be a cathode. The potential V1 applied to the other electrode of the element 60 is fixed to be lower than the potential applied to the wiring 53a, etc. In addition, the potential V1 can be a common potential or a ground potential that is used for other circuits. It is preferable to use a potential common to the potentials used in the other circuits because this simplifies the circuit configuration.

[0077] In addition, as shown in Figure 2, one pixel unit has a wiring that functions as a signal line. Although a four-wire configuration is shown, it is also possible to connect three wires as shown in Figure 1(C). An example of the configuration of the pixel unit 20 in this case is shown in FIG.

[0078] In addition, a p-channel transistor may be used as the transistor in the pixel circuit. For example, Fig. 6(A) and (B) show the configurations shown in Figs. 5(A) and (B), respectively. In this example, the transistor 62 is a p-channel transistor.

[0079] [Monitor circuit] In the case of extremely high-resolution display devices, the area that one sub-pixel can occupy is extremely small. Therefore, it is preferable to simplify the configuration of the pixel circuit. It is preferable that the display device is provided with a monitor circuit that outputs information on the brightness of the child to the outside. By using an external device, the signal to be input to the signal line according to the luminance variation of the display element can be adjusted. By adjusting the amplitude of the signal, it is possible to correct the display unevenness. Regarding a configuration example of a monitor circuit for outputting the current flowing through the wiring 53 in the element circuit to the outside, He explains.

[0080] The circuit 14 is a circuit having a function of selectively outputting a current flowing through a display element of a pixel. The circuit 14 is also called a monitor circuit. In response to the current outputted through the circuit 14 for each pixel, By adjusting the potential of the signal supplied to the pixel, the brightness of each pixel in the pixel section 11 can be reduced. In particular, when a high-definition pixel section 11 is to be formed, the occupied area of ​​the pixel can be corrected. In order to reduce the area, the pixel circuit of each pixel is simplified and provided outside the display device 10. It is preferable to use a method in which the correction is performed by a device or circuit that is connected to the The pixel circuit has the above correction function and performs the correction within the pixel circuit (also called internal correction). In the case of using the above-mentioned correction method, the circuit 14 may not be provided. It is okay to do so.

[0081] FIG. 7A shows a circuit diagram of an example of the configuration of the circuit 14. The circuit 14 includes m (m is 1 or more) The circuit 14 includes a wiring 83. , the wiring 84, and a plurality of wiring groups 53S are electrically connected to each other. The circuit 14 includes at least one wiring 53a, at least one wiring 53b, and at least one wiring 53c. The output terminals 86 (output terminals 86_1 to 86_m) are electrically connected to each other. The output terminal 86 is electrically connected to one of the circuits 80 in the circuit 14 .

[0082] FIG. 7B shows a configuration example of a circuit 80. The circuit 80 includes a plurality of transistors 81 and The transistor 81 has a gate electrically connected to a wiring 83. In addition, one of the source and drain is connected to one of the wirings (wiring 53a, wiring 53b) in the wiring group 53S. 3b or wiring 53c), and the other of the source or drain is electrically connected to wiring 84. The transistor 82 has a gate electrically connected to a terminal 85 and a source or one of the drain and the source of the transistor 81 is electrically connected to one of the drain and the source of the transistor 82; The other of the source and the drain is electrically connected to an output terminal 86 .

[0083] A fixed potential can be applied to the wiring 84. For example, a potential higher than the potential V1 can be applied. Alternatively, a potential lower than the potential V1 can be applied. A signal for controlling the on / off of the pixel unit 11 can be given to the pixel unit 11. During a period (also referred to as a display period), the transistor 81 is turned on, so that The given potential is supplied via the transistor 81 to each of the wiring group 53S.

[0084] A signal for controlling the on and off states of the transistor 82 is applied to the terminal 85. Here, during the period when the pixel section 11 does not display an image, the operation described below can be performed. This allows a period during which the current flowing through each sub-pixel is output to the outside (also called a monitor period). Specifically, the plurality of transistors 81 are turned off, and the plurality of transistors 82 are turned on. By turning on one of the wirings in the wiring group 53S, one of the wirings in the wiring group 53S and the output terminal 86 Therefore, the plurality of transistors 82 are sequentially selected. By selecting the wiring group 53S, the current flowing through each of the wirings is output to the output terminal 86 in a time-division manner. It can be output.

[0085] In FIG. 7B, a transistor 82 is connected to one wiring (such as the wiring 53a). As shown in FIG. 7C, the adjacent wirings in the wiring group 53S are bundled together. Therefore, it is preferable to connect it to one transistor 82. The current output to the output terminal 86 is the sum of the currents output from multiple pixels. This improves the sensitivity. In particular, in high-resolution display devices, Since the size of the display element 60 is small and the value of the current flowing through the display element 60 is also small, By adopting such a configuration, correction can be easily performed. By consolidating the wires, the number of output terminals 86 can be reduced, simplifying the circuit configuration. Cut.

[0086] Here, the above-mentioned An example of a pixel configuration different from that shown in FIG.

[0087] The subpixel shown in FIG. 8A includes a transistor 61, a transistor 62, and a capacitor 63. The subpixel further includes a wiring 51, a wiring 52, a wiring 53, and a transistor 64. The wiring 51 is electrically connected to the wiring 55. The wiring 51 functions as a gate line. The line 52 is a wiring that functions as a signal line, and the line 53 is a wiring that is electrically connected to the circuit 14. In addition, a predetermined potential or signal can be supplied to the wiring 55.

[0088] In FIG. 8A, a transistor 61 has a gate electrically connected to a wiring 51 and a One of the source and drain is electrically connected to the wiring 52, and the other of the source and drain is One electrode of the capacitance element 63 is electrically connected to the gate of the transistor 62. The transistor 62 is connected to a wiring having a function of supplying a potential V2 to one of the source and drain. The other of the source and drain is electrically connected to one electrode of the display element 60 and the transistor. The capacitance element 63 is electrically connected to one of the source and drain of the other transistor 64. One electrode of the transistor 64 is electrically connected to the wiring 51. and the other of the source and the drain is electrically connected to a wiring 53. The other electrode of the display element 60 is electrically connected to a wiring having a function of supplying a potential V1. is.

[0089] In the configuration shown in FIG. 8A, the potential V1 can be set to a potential lower than the potential V2. In addition, when the anode and cathode of the display element 60 are interchanged, the potentials of these electrodes are interchanged. Good.

[0090] In the configuration shown in FIG. 8A, when a predetermined potential is applied to the gate of the transistor 62, The current flowing through the transistor 62 can be output to the wiring 53 via the transistor 64. For example, during the monitoring period, the potential of the wiring 51 can be The potential of the wiring 52 is supplied to the gate of the transistor 62. The potential can be set to be the potential at which the

[0091] In FIG. 8A, the gates of transistors 61 and 64 are arranged in a single arrangement. The configuration is such that the wiring is electrically connected to the line 51, but the configuration is such that the wiring is electrically connected to another wiring. In FIG. 8B, a wiring 57 electrically connected to the gate of the transistor 64 is provided. By adopting such a configuration, for example, during the display period, The resistor 64 can be always in the off state, and an unintended current does not flow in the wiring 53 during this period. This is preferable because

[0092] The configuration shown in FIG. 8C differs from the above mainly in that it does not have the wiring 55. ) the other electrode of the capacitor 63 is connected to the other electrode of the source or drain of the transistor 62. On the other hand, one electrode of the display element 60 and one of the source and drain of the transistor 64 are connected to a This configuration reduces the number of wires, A high-definition display device can be realized.

[0093] FIG. 8D shows the transistors 61 and 64 in the same manner as in FIG. 8B. The configuration shows that each gate is electrically connected to a different wiring.

[0094] In addition, in FIG. 8(A) to (D), each transistor has one gate. As in the above, at least one or all of the transistors are electrically connected. Alternatively, one of the two gates may be a predetermined A structure in which the threshold voltage of a transistor can be controlled by electrically connecting the transistor to a wiring that supplies a potential It is also possible to use the following.

[0095] In the above, the case where an element that displays a display when a current flows is used as the display element 60 is described. However, the present invention is not limited to this. For example, a liquid crystal element or the like that is displayed by applying a voltage may be used. The elements shown can also be applied.

[0096] FIG. 8E shows an example in which a liquid crystal element is used as the display element 60. The configuration includes a transistor 61, a display element 60, and a capacitor element 63. The other of the source and drain of the display element 60 corresponds to one electrode of the display element 60 and the other of the drain of the capacitor element 63 corresponds to one electrode of the display element 60. The other electrode of the display element 60 and the other electrode of the capacitor 63 are electrically connected to each other. The electrode is electrically connected to a wiring that supplies a potential V1.

[0097] [Example of pixel electrode arrangement method] Next, an example of a method for arranging pixel electrodes will be described.

[0098] FIG. 9A is a top view showing an example of the arrangement of pixel electrodes and wiring in the pixel section 11. The wiring 51a and the wiring 51b are arranged alternately. A wiring 52a intersecting with 51b, a wiring 52b, and a wiring 52c are arranged in this order. The pixel electrodes are arranged in a matrix along the extension direction of the wiring 51a and the wiring 51b. is doing.

[0099] As shown in FIG. 9A, the extension direction of the wiring 52a of the pixel unit 20 (first direction) When the period in which the wiring 51a and the like are arranged is defined as a period P, the period in the extension direction (also referred to as the second direction) of the wiring 51a and the like is defined as a period P. It is preferable that the period of the arrangement (referred to as "period 2P") is twice that period. Here, the period P is preferably 12 μm or more and 150 μm or less. Preferably, the thickness is 12 μm or more and 120 μm or less, more preferably, 12 μm or more and 100 μm or less, and even more preferably, 12 μm or more and 100 μm or less. More preferably, the thickness can be set to 12 μm or more and 60 μm or less. A high-definition display device can be realized.

[0100] For example, when attention is paid to the pixel electrode 31a, the pixel electrode 31a is made up of a wiring 51a, a wiring 51b, The pixel electrode 3 is disposed inside the region surrounded by the wiring 52c and the wiring 52a. It is preferable that 1a is positioned so as not to overlap these four wirings. This reduces the parasitic capacitance of each wiring, making it possible to achieve high resolution and reduce the driving frequency. The number can be increased.

[0101] In particular, the pixel electrodes 31a and the like are connected to the wirings 52a, 52b, and 5 It is preferable that the wiring 52a, etc. are provided so as not to overlap with the wiring 52c, etc. Electrical noise is transmitted through the parasitic capacitance between the pixel electrodes 31a, etc. This makes it possible to suppress a change in the luminance of the display element caused by a fluctuation in the potential.

[0102] In addition, the pixel electrodes 31a and the like overlap with the wiring 51a or wiring 52b and the like that function as scanning lines. This can increase the area of ​​the pixel electrode 31a. In FIG. 9B, a part of the pixel electrode 31a is connected to the wiring. 51a (or wiring 52b) is arranged to overlap with each other.

[0103] When the pixel electrode of a certain subpixel and the wiring functioning as the scanning line are arranged to overlap each other, The wiring that functions as the scanning line where the poles overlap is the wiring that connects to the pixel circuit of that subpixel. For example, during the period in which a signal for selecting the wiring 51a or the like is input, Since this corresponds to a period in which the data of the wiring 51a, etc. are rewritten, the wiring 51a, etc., and the pixel electrodes overlapping with them Even if electrical noise is transmitted through the parasitic capacitance between these two pixels, the brightness of the subpixels does not change. There is nothing to do.

[0104] [Pixel layout example] An example of the layout of the pixel unit 20 will be described below.

[0105] FIG. 10(A) shows an example of the layout of one subpixel. The sub-pixel shown in FIG. 10(A) is a transistor. The input terminal 61 includes a transistor 62 and a capacitor 63. The transistor 62 is a semiconductor A gate transistor has two gate electrodes sandwiching a body layer.

[0106] In FIG. 10(A) and other figures, the same hatching is used for the patterns formed by processing the same conductive film. The conductive film located at the bottom side is used to connect the wiring 51 and the transistor. One of the gates of the transistor 62 is formed. A conductive film is formed later. The gate of the transistor 61 and the other gate of the transistor 62 are formed. The wiring 52, the source electrodes of the transistors, and A drain electrode, a first electrode of the capacitance element 63, and the like are formed. The wiring 53 and the like are formed by a conductive film formed on the insulating film 52. A part of the wiring 53 is connected to the capacitance element 52. It serves as the other electrode of 63.

[0107] FIG. 10B shows a layout of the pixel unit 20 using the sub-pixels exemplified in FIG. 10A. FIG. 10B also shows each pixel electrode and a display area 22. do.

[0108] Here, three sub-pixels electrically connected to the wiring 51a and three sub-pixels electrically connected to the wiring 51b are The three sub-pixels are symmetrical to each other. Sub-pixels of the same color are arranged in a zigzag pattern in the extending direction of the sub-pixels 52a, etc. When the subpixels are connected to one wiring that functions as a signal line, the length of the wiring in the subpixels Since the brightness of the sub-pixels can be uniform, the variation in brightness between the sub-pixels can be suppressed.

[0109] By using such a pixel layout, the minimum processing dimension can be reduced to, for example, 0.5 μm or more. Even in mass production lines where the average particle size is 6μm or less, typically 1.5μm to 4μm, It becomes possible to manufacture a high-definition display device.

[0110] The above is a description of an example of a pixel layout.

[0111] The display device exemplified in this embodiment can realize an extremely high-definition display device. In addition, a display device with improved display quality can be provided. It is possible to provide a display device having an increased aperture ratio.

[0112] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0113] (Embodiment 2) In this embodiment, an example of a display device having a part of a configuration different from that of the above-described embodiment 1 will be described. In the following, explanations of parts that overlap with the first embodiment may be omitted.

[0114] The display device exemplified below differs from the display device of the first embodiment above mainly in the arrangement of pixel electrodes. Specifically, the display elements of the three sub-pixels of one pixel are In other words, the six sub-pixels of the pixel unit are arranged in one direction. The six pixel electrodes are arranged in one direction.

[0115] [Configuration example] [Example of display device configuration] FIG. 11A shows a schematic top view of a display device 10 to be described below. The display device 10 includes: Pixel portion 11, circuit 12, circuit 13, circuit 14, terminal portion 15a, terminal portion 15b, and a plurality of wirings 16a, a plurality of wirings 16b, and a plurality of wirings 16c.

[0116] FIG. 11B is a schematic top view showing an example of a method for arranging pixel electrodes in the pixel section 11. As shown in FIG. 11B, the six pixel electrodes of the pixel unit 20 are arranged at equal intervals. Here, the pixel electrodes 31a, 32a, and 33a are all arranged. The pixel electrodes 31b can be used as display element electrodes that exhibit different colors. The pixel electrode 31a is connected to the pixel electrode 32b, and the pixel electrode 33b is connected to the pixel electrode 33a. The electrodes of the display elements each exhibit the same color. Although the pixel electrodes are shown as having the same size, they may have different sizes. Alternatively, the size of the display area 22 on each pixel electrode may be made different.

[0117] FIG. 11C is a circuit diagram showing an example of how pixel circuits are arranged in the pixel section 11. 11(C) has a similar configuration to that of FIG. 1(C).

[0118] The pixel circuit 41a is electrically connected to the pixel electrode 31a. The pixel circuit 43a is electrically connected to the pixel electrode 33a. The pixel circuit 41b is electrically connected to the pixel electrode 31b. The line 42b is electrically connected to the pixel electrode 32b. In FIG. 11(C), each pixel electrode shown in FIG. 11(B) and To make it easier to understand the correspondence with the pixel circuits, each pixel circuit is labeled with R, G, and B. .

[0119] With this configuration, display elements of the same color can be arranged in a line. This improves the viewing angle characteristics in the direction parallel to the direction in which display elements of the same color are arranged. In addition, by using this arrangement method, it is possible to form a color filter. When a method of manufacturing a display device by bonding substrates formed with the same color is used, display elements of the same color are arranged Even if a positional shift occurs in the direction of the light, the color reproducibility is not deteriorated.

[0120] Note that the configuration of the pixel circuit is not limited to the example shown in FIG. The configurations (eg, the configurations shown in FIGS. 2 to 6, 8, etc.) can be used appropriately.

[0121] [Example of pixel electrode arrangement method] Next, the relative positional relationship between the pixel electrodes and various wirings will be described.

[0122] FIG. 12A is a schematic top view showing an example of a pixel electrode and a wiring arrangement in the pixel section 11. The wiring 51a and the wiring 51b are arranged alternately. Wiring 52a, wiring 52b, and wiring 52c that intersect with wiring 1b are arranged in this order. In addition, the pixel electrodes are arranged along the extending direction of the wiring 51a and the wiring 51b.

[0123] In the pixel unit 20, the pixel electrode 31a and the pixel electrode 32a are connected to the wiring 52c and the wiring 5 The pixel electrodes 33a and 31b are disposed between the wiring 52a and the wiring The pixel electrodes 32b and 33b are disposed between the wiring 52b and the wiring 52b. In FIG. 12A, each pixel electrode and its adjacent Although the pixel electrodes are shown not to overlap with the wiring, a part of the pixel electrodes may overlap with the wiring.

[0124] In the pixel unit 20, each pixel electrode overlaps both the wiring 51a and the wiring 51b. In this way, the two gate lines are overlapped with the wiring. By providing a pixel electrode, the area of ​​the pixel electrode can be increased, and the aperture ratio of the pixel portion can be increased. Cut.

[0125] Also, as shown in FIG. 12B, between the wirings functioning as two signal lines (for example, wiring Two pixel electrodes located between the wiring 52a and the wiring 52b are arranged in a direction in which the wiring extends. In other words, the six pixels of one pixel unit 20 are preferably arranged in a staggered manner. The pixel electrodes are arranged in a zigzag pattern along the extension direction of the wiring that functions as the gate line. It is preferable that

[0126] The positional relationship of the six pixel electrodes in one pixel unit 20 will be described with reference to FIG. In Fig. 13A, the center of gravity of each pixel electrode in plan view is marked. Here, the center of gravity of the electrode in plan view is the shape (2 The center of gravity of a square (a two-dimensional figure) is the geometric center of gravity of the square.

[0127] As shown in FIG. 13(A), three adjacent gate lines in the extension direction of the wiring functioning as gate lines are The line connecting the centers of gravity of the two pixel electrodes located at both ends and the line between them It is preferable to arrange the pixel electrodes so that the centers of gravity of the adjacent pixel electrodes do not coincide with each other. For example, A line 30a connecting the center of gravity of pixel electrode 1a and the center of gravity of pixel electrode 33a, and a pixel electrode located between them The arrangement is such that the center of gravity of 32a does not overlap.

[0128] In addition, each pixel unit 20 has six pixel electrodes, and each of three pixel electrodes The center of gravity of the pixel electrode lies on a first straight line, the centers of gravity of the other three pixel electrodes lies on a second straight line, and the third It is preferable that the first line and the second line are parallel to each other and do not coincide with each other. For example, the pixel electrode 3 A line 30a passing through the centers of gravity of the pixel electrodes 1a, 33a, and 32b, and a pixel A straight line 30b passing through the centers of gravity of the pixel electrode 32a, the pixel electrode 31b, and the pixel electrode 33b. are arranged so that they are parallel to each other and do not coincide.

[0129] In reality, there may be variations in the shape of the pixel electrodes, or the shape of the pixel electrodes may vary depending on the pixel. In cases where the center of gravity of three or more pixel electrodes is to be different depending on the color, the line connecting the centers of gravity of the three or more pixel electrodes is not a straight line. In such cases, the direction of extension of the wiring that functions as the gate line is not a straight line. If the centers of gravity of three or more pixel electrodes are located within a rectangular area that is long in the direction of the pixel electrode, these pixels The center of gravity of the pixel electrodes can be considered to be located on a straight line. The center of gravity of the rectangle 30c or 30d is located within the range of the rectangle 30c or 30d. In this case, the width W of the short side of the strip-shaped rectangle is, for example, 1 / 1 of the pixel pitch. 0 or less, and preferably 1 / 20 or less of the pixel pitch.

[0130] Here, as shown in FIG. 12B, one pixel electrode is a wiring that functions as a gate line. It is preferable to arrange the wiring that functions as a gate line so as not to overlap with two or more of the above. When the potential of the pixel electrode changes, the potential of the pixel electrode that overlaps with the pixel electrode changes, and the voltage applied to the display element changes. In addition, if one pixel electrode is connected to any of the wiring that functions as a gate line, If they are arranged so that they do not overlap, the aperture ratio of the pixels may decrease. By configuring one pixel electrode to overlap with a wiring that functions as a gate line, It is possible to maintain a high aperture ratio while suppressing the influence of changes in the potential of the pixel electrode.

[0131] In particular, in one embodiment of the present invention, wirings functioning as two gate lines are connected to one pixel. Therefore, as shown in FIG. 12(B), the positions of adjacent pixel electrodes are shifted, and one pixel electrode The electrode is a wiring that functions as a gate line connected to a pixel, or a gate It is recommended to place it so that it overlaps one of the wirings that functions as a base line. The wiring that functions as a gate line and overlaps with the pixel electrode of the pixel is oriented in the direction of scanning the gate line. In this case, it is preferable that the gate line of the previous row is the gate line of the previous row. The potential of the pixel electrode changes depending on the signal applied to the gate line, resulting in a voltage applied to the display element. Even if a change occurs, the data is rewritten immediately after it occurs, so the impact on the display is minimal. It can be reduced.

[0132] In addition, when it is necessary to arrange the pixel electrode so that it overlaps with two gate lines, The area of ​​the pixel electrode and the other gate line is larger than the area of ​​the overlapping part with one gate line. In particular, it is necessary to make the area of ​​the pixel electrode smaller than that of the pixel electrode. If the ratio of the area of ​​the gate line overlapping the pixel is less than 3%, the change in the potential of the gate line Since there is almost no effect on the electrode potential, it can be considered that there is virtually no overlap. There may be cases where this is possible.

[0133] FIG. 14A shows a pixel electrode arrangement method different from that shown in FIG. 12. Pixel 21a The pixel electrodes 32a and 33a are connected to the wiring (wire 52a, etc.) that functions as a signal line. The pixel electrodes 3 are arranged alternately in the extension direction. 1a is placed.

[0134] In the example shown in FIG. 14B, in the extension direction of the wiring (wiring 52a, etc.) functioning as a signal line, In two adjacent columns of pixels, the pixel electrodes 32a and 33a are interchanged. That is, in two adjacent pixels, the pixel electrodes 32a are arranged in such a manner that ... The element electrodes 33a are provided adjacent to each other.

[0135] In the above, for ease of understanding, symbols such as R, G, and B are used for each pixel electrode and pixel circuit. are used, but are not limited thereto and may be interchanged.

[0136] [Pixel layout example] An example of the layout of the pixel unit 20 will be described below.

[0137] 15(A) and (B) show a layout corresponding to the pixel unit 20 illustrated in FIG. FIG. 15(A) shows a configuration below the pixel electrode 31a, etc., and FIG. FIG. 15B) shows a configuration in which a pixel electrode 31a and the like are provided in addition to the configuration of FIG. 15A. In FIG. 15B, for clarity, the pixel electrodes of adjacent pixel units are shown. not present.

[0138] In FIG. 15A, the wiring 51a, wiring 51b, etc. are formed from a first conductive film. Moreover, the wiring 52a and the like are formed by a second conductive film located in a layer above the above. do.

[0139] In the subpixel 71a, the transistor 61 includes a semiconductor layer provided on the wiring 51a, The transistor 62 is made of a first conductive film. The capacitor element includes a conductive layer, a semiconductor layer on the conductive layer, and wiring 53a. The terminal 63 is configured to include a part of the wiring 53a and a conductive layer made of the first conductive film. .

[0140] In FIG. 15B, each pixel electrode is a pixel electrode of one of the sub-pixels adjacent in the extension direction of the wiring 52a, etc. For example, the pixel electrode 32a is disposed so as to overlap with the transistor in the sub-pixel 71a. The capacitor 61, the capacitor element 63, and a part of the wiring and electrodes constituting the sub-pixel 71a are overlapped. Such a configuration is particularly useful for top-emitting light-emitting devices. By arranging the circuit below the pixel electrode in this way, Even if the area occupied by the element is reduced, a large aperture ratio can be achieved.

[0141] As shown in FIG. 15B, each pixel electrode functions as a signal line such as a wiring 52a. It is preferable to arrange it so that it does not overlap with the wiring. This prevents the change in the potential of the signal line from In addition, the pixel electrode is connected to the signal line. If it is necessary to place them on top of each other, the area of ​​the overlapping area of ​​the pixel electrode should be The ratio should be 10% or less, preferably 5% or less.

[0142] In addition, when the pixel electrode overlaps with the semiconductor layer of the transistor in the adjacent subpixel, the pixel electrode A change in the potential of the transistor may cause a change in the threshold voltage. For example, in FIG. 15B, the pixel electrode 32a functions as a selection transistor for the sub-pixel 71a. The pixel electrode is disposed so as to overlap the semiconductor layer of the transistor 61. The selection transistor of the subpixel corresponding to the previous row in the direction of the pixel pitch can be provided so as to overlap with the selection transistor of the subpixel corresponding to the previous row. In this way, the target sub-pixel is selected and the potential of the pixel electrode is changed. However, the adjacent subpixels that overlap with it are in a non-selected state, and the selected transition of the adjacent subpixels The gate line of the adjacent subpixel is connected to the selection transistor of the subpixel. Since it is possible to provide a potential that reliably turns off the transistor, the threshold voltage is somewhat It is possible to drive the device so that no problems occur even if a change occurs.

[0143] 16A and 16B show a pixel unit in which the display area 22 of each sub-pixel is formed by a pair of gate electrodes. This is an example in which the wiring 51 is disposed between the wirings (wirings 51a and 51b) that function as lines. By using such an arrangement method, the signal lines in the two adjacent display areas 22 can be This can reduce the positional deviation in the extension direction of the wiring (wire 52a, etc.) that functions as a result of the wiring. In this case, the wiring 51a and the wiring 52b may not be arranged at equal intervals.

[0144] The above is a description of the configuration example of the display device.

[0145] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0146] (Embodiment 3) In this embodiment, a cross-sectional structure example of a display device according to one embodiment of the present invention will be described.

[0147] [Cross-section example 1] [Cross-sectional configuration example 1-1] 17 is a schematic cross-sectional view of the display device 10. FIG. 17 shows, for example, a cross-sectional view of FIG. The cross section corresponds to the cross section taken along the line A1-A2. The cross section of the pixel section 11 is shown in FIG. This corresponds to the cross section corresponding to the cutting line B1-B2 in the drawing.

[0148] The display device 10 includes a first substrate 101 and a second substrate 102 bonded together by an adhesive layer 220. It has a combined configuration.

[0149] On the first substrate 101, there are provided a terminal portion 15a, a terminal portion 15b, a wiring 16a, a wiring 16b, a circuit A transistor 251 constituting the circuit 13, a transistor 252 constituting the circuit 12, and a pixel portion 11, a transistor 61, a transistor 62, a capacitance element 63, a display element 60a, etc. On the first substrate 101, an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, a spacer 215, etc. are provided.

[0150] On the first substrate 101 side of the second substrate 102, an insulating layer 221, a light-shielding layer 231, a coloring layer 2 32a, a colored layer 232b, a structure 230a, a structure 230b, etc. are provided.

[0151] A display element 60a is provided on the insulating layer 213. The display element 60a has a first electrode The pixel electrode 31 functions as a pixel electrode, an EL layer 222, and a second electrode 223. An optical adjustment layer 224a is provided between the insulating layer 214 and the EL layer 222. , and is provided to cover the ends of the pixel electrodes 31 and the optical adjustment layer 224a.

[0152] In addition, in FIG. 17, a display element 60b of an adjacent subpixel is provided with a transistor 61 and the like. The display element 60b has an optical adjustment layer 224b. Here, the colored layer 232a or the colored layer 232b is formed from the display element 60a and the display element 60b. In the case where different colors are emitted through the optical adjustment layer 224a and the optical It is preferable to make the thickness of the optical adjustment layer 224b different. Alternatively, one of them is not provided. This may also be configured.

[0153] The transistor 61 functions as a switch for controlling the selection and non-selection of a subpixel. This transistor can also be called a selection transistor. On the other hand, transistor 62 is It is a transistor having a function of controlling the current flowing through the display element 60a. The circuit 12 and the circuit 13 are provided with a transistor 252 and a transistor 251. An example is shown.

[0154] The transistors included in the circuit 12, the circuit 13, and the pixel portion 11 each have the same structure. The transistors included in each of the circuit 12, the circuit 13, and the pixel portion 11 may be The circuit may have all the same structure, or may use a combination of transistors with different structures. It's fine.

[0155] In FIG. 17, a transistor 251, a transistor 252, a transistor 61 and a transistor A channel-etched bottom-gate transistor is applied to each of the transistors 62. In addition, a channel protection layer is disposed on the semiconductor layer 271. A transistor having a bottom gate structure of a protective type may be used.

[0156] For example, the transistor 61 includes a conductive layer 275, a part of which functions as a gate, and a semiconductor layer 2 71 and a pair of conductive layers 273, some of which function as source electrodes or drain electrodes. The other transistors have a similar configuration.

[0157] The capacitance element 63 is made up of a part of the conductive layer 275, a part of the insulating layer 211, and a part of the conductive layer 273. A part of each of the conductive layer 275 and the conductive layer 273 is a pair of electrodes. and a portion of insulating layer 211 functions as a dielectric.

[0158] In FIG. 17, the display element 60a and the display element 60b are light-emitting elements having a top emission structure. The light emitted from the display element 60a and the display element 60b is reflected by the second substrate 1. With this configuration, the light emitted from the display element 60a or the display element 60 Transistors, capacitance elements, circuits, wiring, etc. are arranged on the lower side of b (the first substrate 101 side). This makes it possible to increase the aperture ratio of the pixel section 11.

[0159] The second substrate 102 has a colored layer 23 on the surface facing the first substrate 101, the colored layer 23 overlapping the display element 60a. 2a and a colored layer 232b overlapping the display element 60b. A light-shielding layer 231 may be provided in the area where the colored layer 232a and the colored layer 232b are not provided. As shown in FIG. 17, the light-shielding layer 231 is provided at a position overlapping the circuit 12 and the circuit 13. In addition, a light-transmitting layer may be provided to cover the colored layer 232a, the colored layer 232b, and the light-shielding layer 231. A functional overcoat layer may be provided.

[0160] In addition, on the first substrate 101 side of the second substrate 102, in the region inside the adhesive layer 220, A structure 230a is provided, and a structure 230b is provided in an area outside the adhesive layer 220. The structures 230a and 230b are formed by insulating layers at the ends of the second substrate 102. When a crack occurs in the second substrate 102 or the second substrate 221, the function of suppressing the progression of the crack is provided. In FIG. 17, the structures 230a and 230b are the same as the light-shielding layer 231. The following is an example of a laminated structure of a layer made of the same film as the colored layer 232a. By using a laminated structure of two or more layers in this way, the progression of cracks can be further suppressed. In this embodiment, the adhesive layer 220 is sandwiched between structures 230 on both sides. Although the configuration in which the structure 230a and the structure 230b are arranged is shown, either one of them may be arranged. If there is no risk of racking (for example, if the rigidity of the second substrate 102 is high), The structure 230a and the construction 230b may not be provided.

[0161] The spacer 215 is disposed on the insulating layer 214. The spacer 215 is a first substrate. The gap space is controlled so that the distance between the first substrate 101 and the second substrate 102 does not become shorter than necessary. The spacer 215 has a function as a spacer. The angle is preferably 45 degrees or more and 120 degrees or less, more preferably 60 degrees or more and 100 degrees or less. More preferably, it has a portion that is 75 degrees or more and 90 degrees or less. As a result, a region where the thickness of the EL layer 222 is thin is easily formed on the side surface of the spacer 215. Therefore, a current flows between adjacent display elements via the EL layer 222. This can suppress the phenomenon of light emission. Since the distance between adjacent display elements is small, the spacer 215 having such a shape is displayed. It is effective to provide the EL layer 222 between the elements. This is particularly effective when

[0162] The spacer 215 serves as a shielding mass when forming the EL layer 222, the second electrode 223, etc. When a mask is used, the mask has a function of preventing the surface to be formed from being scratched. It's fine.

[0163] The spacer 215 overlaps the wiring (e.g., wiring 52, wiring 53, etc.) that crosses the gate line. It is preferable that a stator 14 is provided.

[0164] FIG. 17 shows an example of a display device 10 using a color filter method. The layer 232a or the colored layer 232b may be selected from red (R), green (G), and blue (B). A single color may be expressed by three sub-pixels to which any of the three colors is applied. In addition, the use of white (W) and yellow (Y) sub-pixels improves color reproduction and reduces the This is preferable because it can reduce power consumption.

[0165] In the display element 60a, a microcavity is formed by the colored layer 232a and the optical adjustment layer 224a. The combination of T-shaped structures enables light with high color purity to be extracted from the display device 10. The thickness of the optical adjustment layer 224a may be different depending on the color of each sub-pixel. Some sub-pixels may not have an optical adjustment layer.

[0166] In addition, an EL layer that emits white light is applied as the EL layer 222 of the display element 60a. By applying such a display element 60a, the EL layer 222 is provided in each subpixel. Since there is no need to paint the pixels separately, costs can be reduced and yields can be improved. It is easy to achieve high definition. Also, optical adjustment layers with different thicknesses may be provided for each subpixel. The EL layer 222 may be painted differently for each sub-pixel. In this case, optical adjustment is performed. Either the alignment layer or the colored layer, or both of them may be omitted. In each subpixel, at least the light-emitting layer of the EL layer 222 is formed by coating, and the other layers are may be formed without being painted separately.

[0167] In FIG. 17, an FPC 241 electrically connected to the terminal portion 15a and an FPC 242 electrically connected to the terminal portion 15b are shown. 17 shows an example in which an FPC 242 is provided to connect to the The display device 10 can also be called a display module. The display device in this state may also be called a display panel.

[0168] The terminal portion 15a is electrically connected to the FPC 241 via the connection layer 243. Similarly, 15 b is electrically connected to the FPC 242 via a connection layer 243 .

[0169] In FIG. 17, the terminal portion 15a is a conductor formed of the same conductive film as the wiring 16a and the pixel electrode 31. Similarly, the terminal portion 15b is also connected to the wiring 16b. In this manner, the terminal portion 15a and the terminal portion 15b are laminated. By stacking multiple conductive layers, not only is electrical resistance reduced, but mechanical strength is also improved. This is preferable because it can increase the degree of

[0170] In Figure 17, the COF (Chip On Film) method is used on the FPC241. The figure shows an example in which an IC 244 is mounted. The IC 244 may be, for example, a source driver circuit. The IC 244 can be mounted on the substrate 101 using a COG (carbon oxide film). It may also be directly mounted using a method such as the Hip On Glass method.

[0171] The insulating layers 211 and 221 are made of a material that is difficult for impurities such as water and hydrogen to diffuse into. In other words, it is preferable that the insulating layer 211 and the insulating layer 221 function as a barrier film. With such a configuration, the first substrate 101 and the second substrate 102 can be Even if a material having moisture permeability is used, the display element 60a and the transistors may be exposed to the outside. This effectively prevents impurities from entering through the display, resulting in a highly reliable display device. This makes it possible to realize this position.

[0172] In FIG. 17, a hollow seal having a space 250 between a first substrate 101 and a second substrate 102 is shown. For example, the space 250 is filled with an inert gas such as nitrogen or a rare gas. The space 250 may be filled with a liquid crystal material or a fluid material such as oil. Alternatively, the space 250 may be depressurized. However, the present invention is not limited to this, and may be a solid seal filled with resin or the like.

[0173] [Modifications] FIG. 18 shows an example in which the transistor configuration is different.

[0174] The transistor 62, the transistor 251, and the transistor 252 are each partially connected to a second A conductive layer 272 is provided to function as a gate electrode. This shows an example in which a semiconductor is sandwiched between two gate electrodes.

[0175] Applying a potential to one of the two gate electrodes to control the threshold voltage of the transistor This makes it possible to stabilize the electrical characteristics of the transistor.

[0176] In addition, the two gate electrodes can be electrically connected to each other to provide the same signal. Such a transistor has a field effect compared to other transistors. It is possible to increase the mobility and the on-current. As a result, Furthermore, the area occupied by the circuit portion can be reduced. By using a transistor with a large on-state current, it is possible to enlarge the display device. Even if the number of wirings increases when the resolution is increased, the signal delay in each wiring is reduced. It is possible to suppress display unevenness.

[0177] In FIG. 18, transistor 62, transistor 251, and transistor 252 are provided with two A transistor having a gate electrode is applied, and the transistor 61 has one gate electrode. In this example, a transistor having a high on-state current is used. By applying a transistor with two gate electrodes, This makes it possible to reduce the size of the star (particularly the size in the channel width direction).

[0178] [Cross-sectional configuration example 1-2] FIG. 19 shows a circuit diagram suitable for bending the pixel section 11, the circuit 13, and the circuit 14. 1 shows a configuration example of a display device.

[0179] In the display device 10 shown in FIG. 19, a first substrate 101 and a second substrate 102 are sealed with a sealing material 260. Therefore, an example of a bonded solid sealing structure is shown.

[0180] Also, a bonding layer 261 is provided on the first substrate 101, and an insulating layer 216 is provided on the bonding layer 261. Transistors, display elements, etc. are provided on the insulating layer 216. As with 21, a material that is resistant to the diffusion of impurities such as water and hydrogen can be used.

[0181] In addition, an adhesive layer 262 is provided between the second substrate 102 and the insulating layer 221 .

[0182] As shown in FIG. 19, the insulating layer 213 is formed on the pixel portion 11, the circuit 12, and the circuit 13. For example, when a resin material is used as the insulating layer 213, an opening is provided on the outer side. In this case, it is preferable to provide an opening surrounding the pixel portion 11, the circuit 12, the circuit 13, etc. By adopting such a configuration, the vicinity of the side surface of the insulating layer 213 that is in contact with the outside, the pixel section 11, the circuit Since the portions overlapping with the insulating layer 213 and the circuit 13 are not continuous, water can enter the insulating layer 213 from the outside. In this way, it is possible to suppress the diffusion of impurities such as hydrogen.

[0183] As shown in FIG. 19, a solid sealing structure is formed between the first substrate 101 and the second substrate 102. Therefore, it is easy to keep the distance between the first substrate 101 and the second substrate 1 A flexible substrate can be suitably used as the pixel portion 11. , the circuit 12 and the circuit 13 may be folded in part or in whole. For example, the display device 10 may be attached to a curved surface or the pixel portion of the display device 10 may be folded. In this way, various types of electronic devices can be realized.

[0184] [Cross-section example 2] [Cross-sectional configuration example 2-1] FIG. 20 shows an example of a configuration in which the transistor configuration is different. This corresponds to the cross section taken along the cutting line C1-C2 in (A).

[0185] The transistor 61 includes a semiconductor layer 271 on an insulating layer 211 and a gate electrode 272 on the semiconductor layer 271. A conductive layer 272 that functions as an electrode and a gate insulating layer between the semiconductor layer 271 and the conductive layer 272 and an insulating layer 212 that covers the semiconductor layer 271 and the conductive layer 272. A pair of conductive layers 273 serving as source and drain electrodes is formed over the insulating layer 212. The conductive layer 273 is connected to the conductive layer of the semiconductor layer 271 through an opening provided in the insulating layer 276. It is in electrical contact with the area not covered by layer 272 .

[0186] In addition, an insulating layer 217, an insulating layer 218, and an insulating layer 213 are provided over the conductive layer 273. A conductive layer 274 is provided on the insulating layer 218.

[0187] The transistor 62 and the transistor 252 have two gate electrodes sandwiching a semiconductor layer 271. The transistor 61 and the transistor 252 are provided with an insulating layer 211. A conductive layer 275, part of which functions as a gate electrode, is provided below it.

[0188] Here, an opening is formed in a part of the insulating layer 218, and the conductive layer 274 is A part of the conductive layer 273 is provided in contact with the upper surface of the insulating layer 217. The insulating layer 217 is formed by a part of the conductive layer 274 and a part of the insulating layer 217 sandwiched therebetween. In this way, the thickness of the insulating layer located between the conductive layers that function as a pair of electrodes is reduced. This is preferable because it makes it possible to increase the capacitance value of the capacitive element.

[0189] [Cross-sectional configuration example 2-2] FIG. 21 shows a structure of a display device suitable for use when a pixel section 11, a circuit 13, etc. are folded. An example is shown below.

[0190] In the configuration shown in FIG. 21, an insulating layer 211 and a conductive layer 275 are provided on the substrate 101 side. The insulating layer 216 and the first substrate 101 are bonded together by an adhesive layer 261. The second substrate 102 and the insulating layer 221 are bonded together by an adhesive layer 262. It has been done.

[0191] The above is the description of the cross-sectional configuration example 2.

[0192] [Variation 1] FIG. 22 shows an example in which a liquid crystal element is used as the display element 60. In FIG.

[0193] FIG. 22 shows an example of a cross-sectional structure of one sub-pixel as an example of the pixel section 11. The element 60 includes a pixel electrode 31 , a conductive layer 283 , and a liquid crystal 281 .

[0194] On the substrate 102 side, an overcoat 282 that covers the colored layer 232 and the light-shielding layer 231 and a conductive layer A conductive layer 283 is provided.

[0195] In the case of a transmissive display device, the pixel electrode 31 and the conductive layer 283 are provided with a layer that transmits visible light. In the case of a reflective display device, the pixel electrode 31 is made of a conductive material. The device uses a conductive material that reflects light.

[0196] In this example, the vertical alignment (VA) mode is used. 1 shows an example in which the liquid crystal element used in the present invention is applied to a display element 60.

[0197] The VA mode is MVA (Multi-Domain Vertical Alias). gnment) mode, PVA(Patterned Vertical Alignm) ent) mode, ECB (Electrically Controlled Bire fringence mode, CPA (Continuous Pinwheel Al (ignment) mode, ASV (Advanced Super-View) mode, etc. etc. can be used.

[0198] The mode of the liquid crystal element is not limited to this, and may be, for example, IPS (In-Plane-Switching) tching) mode, TN (Twisted Nematic) mode, FFS (Fr Inge Field Switching) mode, ASM (Axially Symmetry metric aligned Micro-cell) mode, OCB (Optica) lly Compensated Birefringence mode, FLC (Fe rroelectric Liquid Crystal) mode, AFLC (Anti Ferroelectric Liquid Crystal mode, etc. can be done.

[0199] Examples of liquid crystal materials include thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, and polymer Dispersion type liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. Liquids that exhibit smectic, cubic, chiral nematic, isotropic, etc. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

[0200] It should be noted that the elements that can be used for the display element 60 are not limited to light-emitting elements and liquid crystal elements. For example, MEMS (Micro Electro Mechanical Systems) Display elements such as MEMS elements and electron emission elements can be used. The elements include shutter-type MEMS display elements, optical interference-type MEMS display elements, etc. Carbon nanotubes may be used as the electron-emitting elements. Electronic paper may be used. Examples of electronic paper include microcapsule type, electrophoretic type, Uses elements that apply the electrowetting method, electronic liquid powder method, etc. It is possible.

[0201] The above is a description of the modified example.

[0202] [Variation 2] An example of a touch panel having a touch sensor will be described below.

[0203] FIG. 23 shows a touch panel in which an on-cell type touch sensor is applied to the configuration shown in FIG. An example of the rule is shown below.

[0204] A conductive layer 291 and a conductive layer 292 are provided on the outer surface of the substrate 102. An insulating layer 294 is provided. A conductive layer 293 is provided over the insulating layer 294. The conductive layer 293 is provided to sandwich the conductive layer 291 through an opening provided in the insulating layer 294. The insulating layer 294 is electrically connected to the two conductive layers 292 formed on the substrate 296. They are attached by layer 295 .

[0205] Capacitive coupling occurs between the conductive layer 291 and the conductive layer 292, and the magnitude of the capacitance is This changes when the object to be detected approaches. A plurality of conductive layers 291 and a plurality of conductive layers 292 are arranged in a lattice pattern. This allows you to obtain location information.

[0206] A terminal portion 299 is provided in an area near the outer periphery of the substrate 102. , and is electrically connected to the FPC 297 via a connection layer 298 .

[0207] Here, the substrate 296 is also used as a substrate that is directly touched by a sensing object such as a finger or a stylus. In that case, a protective layer (ceramic coat, etc.) may be provided on the substrate 296. The protective layer is preferably made of, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. Alternatively, tempered glass may be used for the substrate 296. The tempered glass may be formed by ion exchange or air-cooling tempering. The material is subjected to physical or chemical treatment and compressive stress is applied to the surface. The touch sensor can be provided on one side of the tempered glass, and the opposite side can be used as a display for, for example, an electronic device. By placing it on the outermost surface of the device and using it as a touch surface, the overall thickness of the device can be reduced. can.

[0208] As the touch sensor, for example, a capacitive touch sensor can be used. There are various types of capacitive touch sensors, such as surface capacitive touch sensors and projected capacitive touch sensors. There are self-capacitance and mutual capacitance methods. When using the mutual capacitance method, multiple points can be detected simultaneously. In the following, a projected capacitive touch sensor is used. This section explains what happens when

[0209] However, the present invention is not limited to this, and may be adapted to detect the approach or contact of a detection target such as a finger or stylus. Various sensors that can be used for the measurement of the temperature and humidity can also be applied.

[0210] Here, wiring and the like constituting a touch sensor are formed on the outer surface of the substrate 102, i.e. Although the structure of the touch panel is shown as an on-cell type, the present invention is not limited to this. For example, The configuration of an (out-cell type) touch panel or an in-cell type touch panel may be applied. By using an on-cell or in-cell touch panel configuration, Even if the panel function is added, the thickness can be reduced.

[0211] The above is a description of the cross-sectional configuration example.

[0212] [About each component] Each of the above components will be described below.

[0213] 〔substrate〕 A material having a flat surface can be used for the substrate of the display device. The substrate from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic, etc. Materials such as tantalum, sapphire, and organic resins can be used.

[0214] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate that is thick enough to provide flexibility, a flexible display device can be realized. Cut.

[0215] Examples of glass include non-alkali glass, barium borosilicate glass, and aluminophore glass. Usable materials include silicate glass.

[0216] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient, such as polyamide-imide. Resin, polyimide resin, PET, etc. can be suitably used. Uses substrates impregnated with resin or substrates with inorganic fillers mixed into organic resin to reduce the coefficient of thermal expansion Since the substrate using such a material is light in weight, the surface using the substrate can be The display device can also be made lightweight.

[0217] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above-mentioned substrate, a metal substrate or the like can also be used. Metal substrates have high thermal conductivity and the entire substrate Since heat can be easily conducted to the body, local temperature rise of the display device can be suppressed, which is preferable. I wish.

[0218] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0219] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0220] A hard coat layer (e.g., , silicon nitride layer, etc.) or a layer of material capable of dispersing pressure (e.g. aramid resin layer, etc.) In order to prevent the deterioration of the life of the display element due to moisture, etc., Alternatively, a flexible substrate may have an insulating film with low water permeability laminated thereon. Uses inorganic insulating materials such as silicon, silicon oxide nitride, aluminum oxide, and aluminum nitride. There can be.

[0221] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. By this, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained. For example, a substrate having a glass layer, an adhesive layer, and an organic resin layer laminated thereon from the side closer to the light emitting element is used. By providing such an organic resin layer, the glass layer is prevented from breaking or cracking. The composite material of such glass material and organic resin can suppress the generation of the heat and improve the mechanical strength. By applying this composite material to the substrate, it becomes possible to create a highly reliable flexible display device. It is possible.

[0222] [Transistor] A transistor included in the display device includes a conductive layer functioning as a gate electrode, a semiconductor layer, and A conductive layer serving as a source electrode, a conductive layer serving as a drain electrode, and a gate insulator and an insulating layer that functions as a dielectric layer.

[0223] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, planar, staggered, or inverted staggered transistors can be used. In addition, the transistor may have either a top-gate type or a bottom-gate type structure. Here, the staggered type means that the gate electrode is above the semiconductor layer, and the source electrode and drain electrode are below the semiconductor layer. On the other hand, the inverted staggered type has a structure in which the in-electrode is located below the semiconductor layer. The gate electrode is located above the source electrode and the drain electrode. In the semiconductor device, gate electrodes may be provided above and below the channel.

[0224] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0225] In addition, the semiconductor material used in the transistor is, for example, a Group 14 element (silicon For the semiconductor layer, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0226] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0227] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) are included. nothing.

[0228] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal portions. It is preferable to use an oxide semiconductor film that is not subject to the above-mentioned conditions.

[0229] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display devices that are used in a curved state. It is possible.

[0230] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the capacitance, thereby achieving a highly reliable transistor.

[0231] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is The low off-state current allows the charge stored in the capacitor connected in series with the transistor to be maintained for a long time. By applying such a transistor to a pixel, This makes it possible to stop the driving circuit while maintaining the gradation of each pixel. This makes it possible to realize a display device with reduced power consumption.

[0232] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even in the case of a highly precise pixel section, the scanning line driver circuit and the signal line driver circuit can be It is now possible to form circuits and pixels on the same substrate, reducing the number of components that make up electronic devices. It is possible.

[0233] Alternatively, transistors using different semiconductors may be mixed. For example, polycrystalline Silicon-based transistors and oxide semiconductor-based transistors are mixed. In this case, for example, a transistor in a driver circuit or Polycrystalline silicon is used for transistors that need to pass large currents, such as current control transistors. It is also preferable to use a transistor such as a switching transistor in a pixel. A capacitor is connected in series with the charger, and a transistor holds the charge stored in the capacitor. In particular, it is preferable to use an oxide semiconductor.

[0234] [Conductive Layer] In addition to the gates, sources, and drains of transistors, various wiring and Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and titanium alloys. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or thallium Examples of the metals include tin and tin oxide, and alloys containing tin as the main component. Films containing the materials can be used as single layers or as multilayer structures. For example, silicon A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, A two-layer structure in which an aluminum film is laminated on a stainless steel film, and a copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on gold film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on top of a titanium film or titanium nitride film is laminated on top of that with an aluminum film. A titanium or copper film is laminated on top of the titanium or titanium nitride film. Layer structure, molybdenum film or molybdenum nitride film, and aluminum film or A three-layer structure in which a copper film is laminated and a molybdenum film or molybdenum nitride film is further formed on top of the copper film. Incidentally, oxides such as indium oxide, tin oxide, and zinc oxide may also be used. In addition, the use of copper containing manganese is preferable because it improves the controllability of the shape by etching. .

[0235] In addition, the light-transmitting Examples of materials having this property include indium oxide, indium tin oxide, and indium zinc oxide. , zinc oxide, zinc oxide doped with gallium, or other conductive oxides, or graphene. Or gold, silver, platinum, magnesium, nickel, tungsten, chromium Metallic materials such as molybdenum, iron, cobalt, copper, palladium, or titanium, or the metals An alloy material containing the metal can be used. Alternatively, a nitride of the metal material (e.g., nitride Titanium) may be used. Metal materials, alloy materials (or their nitrides) may be used. In the case where the conductive layer is a conductive layer, the conductive layer may be thin enough to have light-transmitting properties. For example, a silver-magnesium alloy and indium tin oxide can be used. It is preferable to use a laminated film or the like since the electrical conductivity can be increased.

[0236] [Insulating layer] Examples of insulating materials that can be used for each insulating layer, overcoat, spacer, etc. include For example, resins such as acrylic and epoxy resins, and resins having siloxane bonds such as silicone resins. Others: silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide Alternatively, inorganic insulating materials such as ammonium nitrate may be used.

[0237] In addition, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the device. Can be controlled.

[0238] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0239] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0240] [Adhesive layer, sealing material] Adhesive layers and sealing materials include photo-curable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, and heat curable adhesives. Various curing adhesives such as curable adhesives and anaerobic adhesives can be used. Examples of resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, and polyimide resins. Fat, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) Resins, EVA (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc. A material with low moisture permeability is preferable. A two-part mixed resin may also be used. A card or the like may also be used.

[0241] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture can be prevented from adsorbing to the functional element. This is preferable because it is possible to suppress the intrusion of foreign matter and improve the reliability of the display panel.

[0242] In addition, by mixing a filler having a high refractive index or a light scattering material into the resin, a light emitting element can be formed. For example, titanium oxide, barium oxide, Zeolite, zirconium, etc. can be used.

[0243] [Light-emitting element] The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes devices whose light intensity can be controlled. For example, light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0244] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0245] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole transporting material, hole blocking material, high electron transporting material, electron injection The material contains a highly conductive material or a bipolar material (a material with high electron transport and hole transport properties). The insulating layer may further include a layer containing the insulating layer.

[0246] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). The insulating layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0247] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are These molecules recombine and the luminescent material contained in the EL layer emits light.

[0248] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by two or more luminescent materials may be of complementary colors. By selecting a light-emitting material so as to satisfy the above relationship, white light can be obtained. For example, Luminescent substances that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that emit light containing two or more of the spectral components of R, G, and B, It is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. A light emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) is used. It is preferable to use a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions as well.

[0249] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably laminated. The layers may be stacked in contact with each other or separated by an area that does not contain any luminescent material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (e.g., host material, assist material) as the phosphorescent layer, and both of the emitting layers A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. In addition, the driving voltage is reduced.

[0250] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0251] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide, indium Zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. can be used. , gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, Metallic materials such as ballast, copper, palladium, or titanium, alloys containing these metallic materials, or The nitrides of these metal materials (for example, titanium nitride) are also formed thin enough to have light transmission properties. Also, a laminated film of the above materials can be used as a conductive layer. For example, if a laminated film of an alloy of silver and magnesium and indium tin oxide is used, This is preferable because it is possible to increase the electrical conductivity. Graphene or the like may also be used.

[0252] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above-mentioned metal materials and alloys may be used. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. An alloy containing silver and copper, palladium, or magnesium may also be used. The alloy is preferable because of its high heat resistance. Furthermore, an aluminum film or an aluminum alloy film By laminating a metal film or a metal oxide film in contact with the aluminum film or the aluminum The oxidation of the alloy film can be suppressed. Materials for such metal films and metal oxide films include In addition, the conductive film and the metal material that transmit visible light may be used. For example, a laminated film of silver and indium tin oxide, a laminated film of silver and magnesium A laminated film of an alloy of indium and indium tin oxide can be used.

[0253] The conductive layers may be formed by evaporation or sputtering. Using a discharge method such as the inkjet method, a printing method such as the screen printing method, or a plating method It can be formed.

[0254] In addition, the above-mentioned light-emitting layer, the substance having a high hole-injecting property, the substance having a high hole-transporting property, the The layer including a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, and polymers). For example, by using quantum dots in the light-emitting layer, It can also function as such.

[0255] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0256] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0257] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, metal oxides, and multiple gold layers. In addition, the light-shielding layer may contain the material of the coloring layer. For example, a material used for a colored layer that transmits light of a certain color can be used. The present invention uses a laminated structure of a film containing the material and a film containing a material used for a colored layer that transmits light of another color. By using the same material for the colored layer and the light-shielding layer, it is possible to standardize the equipment and simplify the process. This is preferable because it allows simplification.

[0258] [Connection Layer] The connection layer that connects the FPC or IC to the terminals is made of anisotropic conductive film (ACF). Anisotropic Conductive Film (ACP) and Anisotropic Conductive Paste (ACP) Anisotropic Conductive Paste) can be used. do.

[0259] The above is a description of each component.

[0260] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0261] (Embodiment 4) In this embodiment mode, an example of a manufacturing method of a display device using a flexible substrate will be described. do.

[0262] Here, the display element, the circuit, the wiring, the electrodes, the insulating layer, and the optical components such as the colored layer and the light-shielding layer are The layers that contain the optical components are collectively called the element layer. For example, the element layer may contain a display element. In addition to the display element, wiring electrically connected to the display element, transistors used in pixels and circuits The semiconductor device may include an element such as a capacitor.

[0263] In addition, in this case, when the display element is completed (the manufacturing process is completed), the element layer is supported. A member that supports the substrate and has flexibility is called a substrate. This also includes extremely thin films, etc., with a thickness of 10 nm or more and 300 μm or less.

[0264] Representative methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods as follows. One is to form an element layer directly on a flexible substrate. The other method is to form an element layer on a support substrate that is different from the flexible substrate. After that, the element layer is peeled off from the supporting substrate, and the element layer is transferred to the substrate. Although not described in detail, in addition to the above two methods, a device layer is formed on a non-flexible substrate. Alternatively, the substrate may be made flexible by thinning it by polishing or the like.

[0265] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. If the element layer is formed while the plate is fixed to the support substrate, the plate can be easily transported within and between devices. This is preferable because it is easier.

[0266] In addition, when a method of forming an element layer on a supporting substrate and then transferring the element layer to the substrate is used, the element layer is first A release layer and an insulating layer are laminated on a supporting substrate, and an element layer is formed on the insulating layer. The element layer is then transferred to the substrate by peeling the element layer from the support substrate. It is only necessary to select a material that causes peeling at the interface between the peeling layer and the insulating layer or within the peeling layer. In this method, a material having high heat resistance is used for a support substrate and a peeling layer, and thus an element layer is formed. This allows the upper limit of the temperature during the formation of the semiconductor device to be increased, forming a device layer having more reliable devices. This is preferable because it is possible.

[0267] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material A layer containing an oxide is laminated and used. In addition, silicon oxide, silicon nitride, etc. are used as an insulating layer on the peeling layer. It is preferable to use a multi-layer structure including silicon, silicon oxynitride, silicon nitride oxide, etc. In this specification, an oxynitride is a material containing more oxygen than nitrogen as a component. Nitrogen oxide refers to a material that has a high nitrogen content compared to oxygen in its composition. Refers to the material.

[0268] The element layer and the support substrate can be separated by applying a mechanical force or by etching the separation layer. Examples include etching the surface or allowing a liquid to penetrate the peeled interface. Alternatively, the difference in thermal expansion coefficient between the two layers forming the peeling interface can be utilized to heat or The peeling may be effected by cooling.

[0269] When peeling begins, a starting point for peeling is first formed, and the peeling progresses from that starting point. The starting point of peeling is preferably a point where a part of the insulating layer or the peeling layer is locally heated by laser light or the like. and by physically cutting or penetrating a part of the insulating layer or peeling layer with a sharp object. It can be formed.

[0270] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, there is no need to provide a peeling layer.

[0271] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. By doing so, it is possible to peel off the glass and the organic resin at the interface. The above organic resins can also be used as the substrate.

[0272] Alternatively, a heat generating layer is provided between a support substrate and an insulating layer made of an organic resin, and the heat generating layer is heated. The heat generating layer may be formed by applying a current to the heat generating layer and the insulating layer. Materials that generate heat when current flows through them, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is applied. For example, the heat generating layer can be made of various materials such as The material to be used can be selected from the group consisting of semiconductors, metals, and insulators.

[0273] A more specific example of the manufacturing method will be described below. The flexible display device according to one embodiment of the present invention can be manufactured by changing the layer to be peeled off. A device can also be made.

[0274] First, an island-shaped release layer 303 is formed on a fabrication substrate 301, and a layer to be peeled 3 is formed on the release layer 303. Separately from this, an island-shaped peeling layer 321 is formed on the production substrate 321 (FIG. 24(A)). A layer 323 is formed, and a layer to be peeled 325 is formed on the peeling layer 323 (FIG. 24(B)).

[0275] Here, an example of forming an island-shaped release layer is shown, but the present invention is not limited to this. When peeling the layer to be peeled off from the substrate, the interface between the substrate and the peeling layer, and the interface between the peeling layer and the layer to be peeled off In this embodiment, a material is selected that allows peeling to occur in the peeling layer. The following shows an example where peeling occurs at the interface of the peeling layer. However, this is not limited to this, depending on the structure. In addition, when the layer to be peeled has a laminated structure, The layer is specifically referred to as the first layer.

[0276] For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, Peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, A part of the peeling layer (here, the tungsten oxide film) may remain on the peeled layer side. The remaining release layer may then be removed.

[0277] The substrate used must be heat-resistant enough to withstand the processing temperatures during the manufacturing process. The substrate to be fabricated may be, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, or the like. A laminated substrate, a metal substrate, a resin substrate, a plastic substrate, etc. can be used.

[0278] When a glass substrate is used as the substrate, an oxide film is provided between the substrate and the peeling layer as a base film. Forming insulating films such as silicon film, silicon oxynitride film, silicon nitride film, silicon nitride oxide film, etc. This is preferable because it is possible to prevent contamination from the glass substrate.

[0279] The release layer is made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, Zirconium, Zinc, Ruthenium, Rhodium, Palladium, Osmium, Iridium , an element selected from silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the silicon-containing layer may be amorphous, microcrystalline, or polycrystalline. Also usable are aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, and indium oxide. Indium, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The peeling layer may be made of a high melting point metal such as tungsten, titanium, or molybdenum. Use of a metal material is preferable because it increases the degree of freedom in the process of forming the peeled layer.

[0280] The peeling layer can be formed by, for example, a sputtering method, a plasma CVD method, or a coating method (spin coating). The peeling layer can be formed by a method such as a printing method, a droplet ejection method, a dispensing method, etc. is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

[0281] When the peeling layer has a single layer structure, it is preferably a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten and tungsten oxide. A layer containing an oxynitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing a tungsten oxide or nitride. Alternatively, a layer containing an oxide or oxynitride of a mixture of fluorine and molybdenum may be formed. A mixture of tungsten and molybdenum is, for example, a mixture of tungsten and molybdenum. Correct.

[0282] In addition, a layer including tungsten and a layer including a tungsten oxide may be used as the peeling layer. When forming a structure, a layer containing tungsten is formed, and an insulating layer formed of oxide is formed on the layer. By forming a film, a tungsten oxide-containing film is formed at the interface between the tungsten layer and the insulating film. Alternatively, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. Treatment, oxygen plasma treatment, nitrous oxide (N 2 O) Plasma treatment, ozone water, etc., have strong oxidizing power A layer containing tungsten oxide may be formed by treating with a solution or the like. Treatment and heating may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The above plasma treatment or heat treatment may be performed under a mixed gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating film that will be formed later. be.

[0283] In addition, if peeling can be performed at the interface between the preparation substrate and the layer to be peeled off, a peeling layer may not be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Next, an organic resin such as polyolefin, polyamide, polycarbonate, or acrylic is formed. By performing laser irradiation or heat treatment, the adhesion between the formation substrate and the organic resin is improved. Then, insulating films and transistors are formed on the organic resin. Laser irradiation is performed at a higher energy density, or heat treatment is performed at a higher temperature than the previous heat treatment. By carrying out this process, it is possible to separate the organic resin from the substrate at its interface. Separation may also be achieved by allowing a liquid to permeate the interface between the substrate and the organic resin.

[0284] In this method, insulating films and transistors are formed on organic resins that have low heat resistance, so In the manufacturing process, the substrate cannot be exposed to high temperatures. Since the capacitor does not require a high-temperature fabrication process, it can be suitably formed on an organic resin.

[0285] The organic resin may be used as a substrate for constituting a device, or the organic resin may be removed. Alternatively, another substrate may be attached to the exposed surface of the layer to be peeled using an adhesive. Another substrate (support film) may be attached to the resin using an adhesive.

[0286] Alternatively, a metal layer is provided between the substrate and the organic resin, and a current is passed through the metal layer to form the metal The layer may be heated to effect peeling at the interface between the metal layer and the organic resin.

[0287] There is no particular limitation on the layer to be peeled off. For example, in the case of forming a display device shown in FIG. In this case, the insulating layer 216, each transistor, each display element, etc. are used as one of the layers to be peeled. The other layer to be peeled off is the insulating layer 221, each colored layer, and the light-shielding layer 2 31, etc. can be formed.

[0288] The insulating layer (first layer) formed in contact with the peeling layer is a silicon nitride film or a silicon oxynitride film. The insulating film may be formed in a single layer or multiple layers using a silicon oxide film, a silicon nitride oxide film, or the like. However, the present invention is not limited to this, and an optimum material can be selected depending on the material used for the release layer. This can be done.

[0289] The insulating layer is formed by using a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, it is possible to form a thin film at a temperature of 250°C or higher and 400°C or higher by plasma CVD. By forming the film at a temperature of 0.4 ° C. or less, a dense film with extremely high moisture resistance can be obtained. The thickness of the insulating layer is 10 nm to 3000 nm, and further 200 nm to 1500 nm. Below is preferred.

[0290] Next, the fabrication substrate 301 and the fabrication substrate 321 are placed so that the surfaces on which the peeled layers are formed face each other. The adhesive layer 307 is then cured (FIG. 24( C).

[0291] The bonding of the preparation substrate 301 and the preparation substrate 321 is preferably performed under a reduced pressure atmosphere. It is.

[0292] In addition, FIG. 24C shows a case where the peeling layer 303 and the peeling layer 323 have different sizes. However, a release layer of the same size may be used as shown in FIG. 24(D).

[0293] The adhesive layer 307 is connected to the release layer 303, the layer to be peeled 305, the layer to be peeled 325, and the release layer 323. The end of the adhesive layer 307 is placed on the release layer 303 or the release layer 323. It is preferable that the edge of the first strip is located inside the edge of the first strip. This can prevent the fabrication substrate 301 and the fabrication substrate 321 from being strongly attached to each other, and the subsequent peeling process can be performed without using the adhesive. This can prevent the yield from decreasing.

[0294] The adhesive layer 307 may be made of, for example, a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various types of curing adhesives such as curing adhesives and anaerobic adhesives can be used. Adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, and polyimide. Examples include amide resin, imide resin, PVC resin, PVB resin, and EVA resin. A material with low moisture permeability, such as epoxy resin, is preferable. The adhesive is applied only to the desired area. It is preferable to use a material with low fluidity so that the adhesive sheet can be used. Alternatively, a sheet or film type adhesive may be used. For example, OCA (optica A clear adhesive film can be preferably used.

[0295] The adhesive may have tackiness before bonding, and may be tacky when heated or irradiated with light after bonding. The adhesiveness may be exhibited by

[0296] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. Adsorbent materials may be used. Desiccants may be included to prevent the ingress of moisture from the atmosphere. This is preferable because it can suppress deterioration of the elements and improve the reliability of the device.

[0297] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 25(A) and 25(B)).

[0298] The preparation substrate 301 and the preparation substrate 321 may be peeled off from either one of them. In this case, the substrate may be peeled off from a substrate on which a large release layer is formed, or from a substrate on which a small release layer is formed. The substrate may be peeled off. A semiconductor element, a light-emitting element, a display element, or the like may be disposed on only one of the substrates. When the substrate is fabricated, it may be peeled off from the substrate on which the element is formed, or from the other substrate. Here, an example in which the formation substrate 301 is peeled off first will be described.

[0299] The laser beam is focused on the adhesive layer 307 in a cured state, the layer to be peeled 305, and the peeling layer 303, which are overlapped with each other. The area is irradiated (see arrow P1 in FIG. 25(A)).

[0300] By removing a part of the first layer, a starting point of peeling can be formed (the area surrounded by the dotted line in FIG. 25(B)). At this time, not only the first layer but also other layers of the layer to be peeled 305 and the peeling layer 3 03. A portion of the adhesive layer 307 may be removed.

[0301] It is preferable that the laser light is irradiated from the side of the substrate on which the peeling layer to be peeled is provided. When the laser beam is irradiated to the region where the peeled layer 305 and the peeling layer 323 overlap, By forming cracks only in the layer 305 to be peeled out of the layer 325 to be peeled, the substrate can be selectively fabricated. The plate 301 and the release layer 303 can be peeled off (see the area surrounded by the dotted line in FIG. 25(B)). Here, an example is shown in which a part of each layer constituting the layer to be peeled 305 is removed.

[0302] Then, the layer to be peeled 305 and the preparation substrate 301 are separated from each other from the formed peeling starting point (FIG. 25(C)(D)). As a result, the peeled layer 305 is removed from the preparation substrate 301 to the preparation substrate 321. can be transposed to

[0303] For example, from the starting point of peeling, physical force (peel-off by hand or tool, roller The layer to be peeled 305 and the preparation substrate 301 are separated by a process such as a process of rotating the substrate to separate the layer to be peeled off. That's good.

[0304] In addition, a liquid such as water is permeated into the interface between the peeling layer 303 and the layer to be peeled 305 to form the fabricated substrate 3 The liquid may be separated from the peeling layer 303 and the peeled layer 305 by capillary action. By penetrating between the separation layers 305, separation can be easily achieved. Static electricity can adversely affect the functional elements contained in the peeled layer 305 (semiconductor elements can be electrostatically It can suppress damage caused by the power being blown away by the enemy.

[0305] Next, the exposed peeled layer 305 and the substrate 331 are bonded together using an adhesive layer 333. The adhesive layer 333 is cured (Figure 26(A)).

[0306] The layer to be peeled 305 and the substrate 331 are preferably bonded together under a reduced pressure atmosphere. .

[0307] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 26(B) and (C)).

[0308] The laser beam is focused on the adhesive layer 333 in a cured state, the layer to be peeled 325, and the peeling layer 323, which are overlapped with each other. The area is irradiated (see arrow P2 in FIG. 26(B)). This forms the starting point of peeling (see the area surrounded by the dotted line in Figure 26(C). Here is an example of removing a part of each layer that constitutes 325.) In this case, not only the first layer but also Other layers of the layer to be peeled 325, or parts of the peeling layer 323 and adhesive layer 333 may be removed.

[0309] It is preferable that the laser light is irradiated from the formation substrate 321 side on which the peeling layer 323 is provided. .

[0310] Then, the layer to be peeled 325 and the preparation substrate 321 are separated from each other from the formed peel starting point (FIG. 26(D)). This transfers the layer to be peeled 305 and the layer to be peeled 325 to the substrate 331. It is possible.

[0311] Thereafter, a substrate may be further attached to the layer 325 to be peeled.

[0312] The exposed peeled layer 325 and the substrate 341 are bonded together with an adhesive layer 343. 27A, the substrate 341 is preliminarily provided with an opening, and the resin 43 is then cured. The following shows an example of this.

[0313] In this manner, the layer to be peeled off can be sandwiched between the pair of flexible substrates.

[0314] Thereafter, as shown in FIG. 27(B), unnecessary ends of the substrates 331 and 341 are cut off. At this time, the end portions of the layer to be peeled 305 and the layer to be peeled 325 may be removed at the same time. It may be cut.

[0315] By the above method, a flexible device can be manufactured. By using the configuration exemplified in the above embodiment, a display device having flexibility can be manufactured. can.

[0316] In the above-described method for manufacturing a display device according to one embodiment of the present invention, After bonding a pair of substrates having the above-mentioned structure, a starting point for peeling is formed by irradiating the substrate with laser light. The peeling layer and the layer to be peeled are then put into a state where they can be easily peeled from each other, and then the peeling is performed. This can improve the yield of the peeling process.

[0317] In addition, after a pair of substrates on which a peeled layer is formed are bonded together in advance, After peeling, a substrate constituting a device to be manufactured can be attached to the peeled layer. Therefore, when bonding the layers to be peeled together, the substrates to be manufactured have low flexibility. This allows for more precise alignment than when bonding flexible substrates together. It can be improved.

[0318] As shown in FIG. 28A, the end of the region 351 to be peeled of the layer 305 is It is preferable that the edge of the peeling layer 303 is located inside the edge of the peeling layer 303. This improves the yield of the peeling process. In addition, when there are a plurality of regions 351, as shown in FIG. As shown in FIG. 28(C), a peeling layer 303 may be provided for each region 351. A plurality of regions 351 may be provided on one release layer 303 .

[0319] The above is a description of the method for manufacturing a flexible display device.

[0320] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0321] (Embodiment 5) In this embodiment, examples of electronic devices to which the display device of one embodiment of the present invention can be applied will be described. do.

[0322] Using the display device of one embodiment of the present invention, an electronic device or a lighting device can be manufactured. By using such a display device, electronic devices and lighting devices with high display quality can be manufactured. By using such a display device, electronic devices and lighting devices having good viewing angle characteristics can be manufactured. By using the display device of one embodiment, electronic devices and lighting devices with reduced power consumption can be manufactured. In addition, highly reliable electronic devices and lighting devices can be manufactured using the display device of one embodiment of the present invention. .

[0323] Examples of electronic devices include television sets, desktop or notebook computers, etc. Personal computers, computer monitors, digital cameras, digital videos Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples of such machines include live video games, pachinko machines, and other large gaming machines.

[0324] The electronic device or lighting device according to one embodiment of the present invention can be used for interior or exterior walls of a house or building, Or it can be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0325] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by non-contact power transmission. It is preferable that the secondary battery can be charged.

[0326] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, and silver-zinc batteries. do.

[0327] The electronic device according to one embodiment of the present invention may include an antenna. By doing so, it is possible to display images and information on the display unit. And if a secondary battery is included, the antenna may be used for contactless power transmission.

[0328] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Numbers, distance, light, liquids, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared rays) It may have.

[0329] The electronic device according to one embodiment of the present invention can have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, running various software (programs) a function to read out a program or data recorded on a recording medium; It can have functions etc.

[0330] Furthermore, in an electronic device having a plurality of display units, one of the display units is used mainly for displaying image information. and another display unit that mainly displays text information, or multiple displays It can have a function for displaying a stereoscopic image by displaying an image taking into account parallax. Furthermore, in electronic devices having an image receiving unit, the function of taking still or moving images, The function of automatically or manually correcting the captured image, and the function of storing the captured image on a recording medium (external or electronic) It can have functions such as storing the captured image on a computer (built into the device) and displaying the captured image on the display unit. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be used. may have the following structure:

[0331] 29(A) to (E) show an example of an electronic device having a curved display unit 7000. The display unit 7000 has a curved display surface, and displays information along the curved display surface. The display unit 7000 may be flexible.

[0332] The display unit 7000 is manufactured using the display device or the like according to one embodiment of the present invention. This reduces power consumption and provides a highly reliable electronic device with a curved display. can.

[0333] An example of a mobile phone is shown in Fig. 29(A) and (B). The mobile phone 7110 shown in FIG. 29B includes a housing 7101 and a display unit 7102. 000, operation button 7103, external connection port 7104, speaker 7105, microphone 71 06, etc. The mobile phone 7110 shown in FIG. 29(B) further includes a camera 7107. Yes.

[0334] Each mobile phone has a touch sensor on the display unit 7000. All operations, such as inputting text, can be performed by touching the display 7000 with a finger or a stylus. It can be done.

[0335] In addition, the operation button 7103 can be used to turn the power on and off, and to display the display unit 7000. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0336] In addition, a detection device such as a gyro sensor or an acceleration sensor may be provided inside the mobile phone. The orientation of the mobile phone (portrait or landscape) is then determined and the orientation of the screen display of the display unit 7000 is automatically adjusted. The screen orientation can be dynamically changed. By touching 7000, operating the operation button 7103, or using the microphone 7106 This can also be done by inputting, etc.

[0337] An example of a portable information terminal is shown in FIG. 29(C) and (D). The portable information terminal shown in FIG. 29(C) The portable information terminal 7200 and the portable information terminal 7210 shown in FIG. 29(D) each include a housing 7201 and It has a display unit 7000. In addition, it has operation buttons, an external connection port, a speaker, a microphone, The display unit 7000 may have an antenna, a camera, a battery, etc. The mobile information terminal is operated by touching the display unit 7000 with a finger or a stylus. This can be done.

[0338] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, as a smartphone, The portable information terminal exemplified in this embodiment can be, for example, a mobile phone, E-mail, viewing and writing text, playing music, internet communication, computer games, etc. The various applications can be executed.

[0339] The portable information terminal 7200 and the portable information terminal 7210 are configured to display text and image information on a plurality of devices. For example, as shown in Figure 29(C) and (D), three operation buttons can be displayed on the screen. A button 7202 can be displayed on one side, and rectangular information 7203 can be displayed on the other side. FIG. 29(C) shows an example in which information is displayed on the upper side of the mobile information terminal, and FIG. 29(D) Here is an example of how information is displayed on the side of a mobile information terminal. Also, when the mobile information terminal has three or more sides, The information may be displayed on the

[0340] An example of such information is notifications from social networking services (SNS). , display notifying you of incoming e-mails or telephone calls, subject of e-mails or sender name , date and time, time, battery level, antenna reception strength, etc. Or, the information is displayed Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0341] For example, the user of the portable information terminal 7200 may carry the portable information terminal 7200 in a breast pocket of a garment. When the item is stored, the display (information 7203 in this example) can be confirmed.

[0342] Specifically, the telephone number or name of the caller of the incoming call is input to the mobile information terminal 7200. The user takes the mobile information terminal 7200 out of his / her pocket and You can check the display and decide whether or not to answer the call without taking it out.

[0343] FIG. 29E shows an example of a television device. The television device 7300 has a housing 7 A display unit 7000 is built into the housing 301. This shows a configuration that supports 301.

[0344] The television device 7300 shown in FIG. 29E is operated by an operation switch provided in the housing 7301. This can be done by a separate remote control 7311 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7311 may display information to be output from the remote control unit 7311. The remote control 7311 may have a display unit that displays the operation keys or touch panel. The channel and volume can be controlled by the touch panel, and the display 7000 displays You can control the image that is displayed.

[0345] The television device 7300 includes a receiver and a modem. The receiver can receive general television broadcasts. It can also receive TV broadcasts by wire or by modem. By connecting to a wireless communication network, one-way (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0346] FIG. 29(F) shows an example of a lighting device having a curved light-emitting portion.

[0347] The light-emitting portion of the lighting device shown in FIG. 29F is formed using the display device or the like according to one embodiment of the present invention. According to one aspect of the present invention, a light emitting device having a curved light emitting portion and reduced power consumption is manufactured. A highly reliable lighting device can be provided.

[0348] The light-emitting unit 7411 of the lighting device 7400 shown in FIG. 29(F) has two convexly curved Therefore, the light emitting parts are arranged symmetrically around the lighting device 7400. It can illuminate in all directions.

[0349] Furthermore, the light-emitting unit of the lighting device 7400 may be flexible. The light emitting surface of the light emitting part can be freely adjusted according to the purpose. The structure may be bendable.

[0350] The lighting device 7400 includes a base 7401 having an operation switch 7403 and a It has a light emitting portion 7411 that is supported.

[0351] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing having the above may be fixed to a ceiling or hung from the ceiling. The light-emitting surface can be curved, so a specific area can be illuminated by curving the light-emitting surface in a concave shape. It can be used to illuminate a small area, or the light-emitting surface can be curved convexly to illuminate an entire room.

[0352] 30(A) to (I) show a display device having a flexible and bendable display unit 7001. 1 shows an example of a portable information terminal.

[0353] The display portion 7001 is manufactured using a display device or the like according to one embodiment of the present invention. The display device can be bent to a diameter of 0.01 mm or more and 150 mm or less. The display unit 7001 may be provided with a touch sensor, and when the display unit 7001 is touched with a finger or the like, According to one aspect of the present invention, a flexible display device can be used to operate a mobile information terminal. It is possible to provide an electronic device having a highly reliable electronic device.

[0354] 30(A) and (B) are perspective views showing an example of a portable information terminal. 00 includes a housing 7501, a display unit 7001, a drawer member 7502, an operation button 7503, etc. has.

[0355] The portable information terminal 7500 has a flexible display unit wound in a roll shape in a housing 7501. The display unit 7001 can be pulled out using a pull-out member 7502. do.

[0356] In addition, the portable information terminal 7500 can receive video signals using a built-in control unit. The image can be displayed on the display unit 7001. The battery is built in. Also, the housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be directly supplied from the outside via wires.

[0357] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. In addition, in FIG. 30(A) and (B), the mobile information terminal 7500 In the example shown, the operation buttons 7503 are arranged on the front surface of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface or on the back surface.

[0358] FIG. 30B shows a portable information terminal 7500 with the display portion 7001 pulled out. In this state, an image can be displayed on the display unit 7001. FIG. 30(A) shows a state in which the display unit 7001 is rolled up, and FIG. 30(B) shows a state in which the display unit 7001 is pulled out. The portable information terminal 7500 may be configured to display different images depending on the state. For example, in FIG. In the state of (A), the rolled-up portion of the display unit 7001 is hidden. This allows the power consumption of the portable information terminal 7500 to be reduced.

[0359] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001 in place, a reinforcing frame may be provided on the side of the display unit 7001 .

[0360] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0361] 30(C) to (E) show an example of a foldable portable information terminal. In the unfolded state, in Figure 30(D), it is either unfolded or folded. In FIG. 30(E), the portable information terminal 76 is in a folded state. The portable information terminal 7600 is highly portable when folded and can be folded up to 100 mm in length when unfolded. In this mode, the seamless, large display area provides excellent visibility.

[0362] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0363] An example of a foldable mobile information terminal is shown in Figures 30(F) and 30(G). In FIG. 30(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is folded so that the 7001 faces outward. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can prevent the surface from getting dirty or scratched.

[0364] FIG. 30(H) shows an example of a flexible portable information terminal. The portable information terminal 7700 is The device has a housing 7701 and a display unit 7001. , 7703b, speakers 7704a, 7704b as audio output means, and an external connection port 7 The portable information terminal 7700 may have a display 705, a microphone 7706, and the like. The battery 7709 may be mounted on the display unit 7 It may be placed overlapping with 001.

[0365] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape and can also be twisted. For example, the display portion 7001 of the portable information terminal 7700 is Alternatively, the portable information terminal 7700 can be folded so that the front and rear faces are facing outward. The display unit 7701 and the display unit 7702 may be wound in a roll. Since the mobile information terminal 7700 can freely change shape, even if it is dropped, The advantage of this structure is that it is less likely to be damaged even if an external force is applied thereto unintentionally.

[0366] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Do not hang it from a wall or use it by fixing the housing 7701 to a wall with a magnet, etc. It can be conveniently used in a variety of situations.

[0367] FIG. 30(I) shows an example of a wristwatch-type portable information terminal. The device includes a keyboard 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. 01 or band 7801, etc.

[0368] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0369] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It supports various functions such as auto-start, silent mode and power saving mode. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0370] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can start the application.

[0371] In addition, the portable information terminal 7800 can perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0372] The portable information terminal 7800 may also have an input / output terminal 7802. If the device has an 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the portable information terminal shown in the example is performed by non-contact power transmission without going through the input / output terminal. You may go.

[0373] FIG. 31(A) shows the exterior of the automobile 7900. FIG. 31(B) shows the driver's seat of the automobile 7900. The automobile 7900 includes a body 7901, wheels 7902, a windshield 7903, and a It also has lights 7904 and fog lights 7905.

[0374] The display device of one embodiment of the present invention can be used for a display portion of an automobile 7900, for example. For example, the display units 7910 to 7917 in FIG. 31B may be used in the display devices of one embodiment of the present invention. A location can be provided.

[0375] The display portion 7910 and the display portion 7911 are provided on a windshield of the automobile. In one embodiment of the present invention, an electrode of a display device is formed using a light-transmitting conductive material. As a result, a so-called see-through display device can be obtained, in which the opposite side can be seen through. If the display device is in a see-through state, it will not obstruct the view when driving the car 7900. Therefore, the display device of one embodiment of the present invention is installed on the windshield of the automobile 7900. In addition, when a transistor or the like is provided in the display device, an organic semiconductor A light-transmitting organic transistor using a material or a transistor using an oxide semiconductor It is preferable to use a transistor having the following structure.

[0376] The display unit 7912 is provided on the pillar. The display unit 7913 is provided on the dashboard. For example, an image from an imaging means provided on the vehicle body is displayed on the display unit 7912. By extending the display, it is possible to compensate for the visibility obstructed by the pillar. The 913 can complement the view blocked by the dashboard, and the display 7914 This can complement the view blocked by the door. By projecting an image from the imaging means, blind spots can be compensated for and safety can be improved. In addition, by projecting images that complement the invisible parts, safety checks can be performed more naturally and without discomfort. This can be done.

[0377] The display unit 7917 is provided on the handle. 6, or display 7917 displays navigation information, speedometer, tachometer, driving It can provide a variety of information, such as distance traveled, fuel amount, gear status, air conditioning settings, and more. In addition, the display items and layout displayed on the display can be customized to suit the user's preferences. The above information can be displayed on the display units 7910 to 7914. can also be displayed.

[0378] Note that the display portions 7910 to 7917 can also be used as lighting devices.

[0379] The display unit to which the display device according to one embodiment of the present invention is applied may be flat. The display device of one embodiment may have a configuration that does not have a curved surface and is not flexible.

[0380] Figure 31 (C) and (D) show digital signage. The digital signage includes a housing 8000, a display unit 8001, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a power switch, connection terminals, various sensors, a microphone, etc.

[0381] Figure 31(D) shows a digital signage attached to a cylindrical pillar.

[0382] The larger the display unit 8001 is, the more information can be displayed at one time. The wider the display unit 8001 is, the more easily it will catch people's attention, and the more effective it will be for advertising, for example. can.

[0383] By applying a touch panel to the display unit 8001, images or videos can be displayed on the display unit 8001. It is preferable because it not only displays information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0384] The portable game machine shown in FIG. 31E includes a housing 8101, a housing 8102, a display portion 8103, and a display unit 8104. , a display unit 8104, a microphone 8105, a speaker 8106, an operation key 8107, Includes Tyrus 8108 etc.

[0385] The portable game machine shown in FIG. 31(E) has two display units (display unit 8103 and display unit 810 Note that the number of display units included in the electronic device of one embodiment of the present invention is not limited to two. If an electronic device has multiple display units, at least one At least one display portion may include the display device of one embodiment of the present invention.

[0386] FIG. 31F shows a notebook personal computer, which includes a housing 8111 and a display unit 811 2, a keyboard 8113, a pointing device 8114, etc.

[0387] The display device of one embodiment of the present invention can be applied to the display portion 8112.

[0388] FIG. 32(A) shows the appearance of the camera 8400 with the viewfinder 8500 attached. show.

[0389] The camera 8400 includes a housing 8401, a display unit 8402, an operation button 8403, and a shutter. The camera 8400 has a button 8404 and the like. The camera 8400 also has a detachable lens 8406. It is attached.

[0390] Here, the camera 8400 is a camera in which the lens 8406 is removed from the housing 8401 and replaced. However, the lens 8406 and the housing may be integrated together.

[0391] The camera 8400 can capture an image by pressing the shutter button 8404. In addition, the display portion 8402 has a function as a touch panel. It is also possible to capture an image by doing so.

[0392] The housing 8401 of the camera 8400 has a mount having electrodes, and a viewfinder 850 In addition to 0, strobe devices etc. can also be connected.

[0393] The finder 8500 includes a housing 8501, a display unit 8502, a button 8503, and the like. .

[0394] The housing 8501 has a mount that engages with the mount of the camera 8400, The mount can be attached to the camera 8400. The mount also includes an electrode The image received from the camera 8400 through the electrode is displayed on the display unit 8502. It is possible to do so.

[0395] The button 8503 functions as a power button. The 8502 display can be switched on and off.

[0396] The display unit 8402 of the camera 8400 and the display unit 8502 of the finder 8500 are The display device according to one embodiment of the present invention can be applied.

[0397] In FIG. 32(A), the camera 8400 and the finder 8500 are separate electronic devices. However, these are configured to be detachable. The camera may also have a built-in viewfinder with a display device such as a digital camera.

[0398] FIG. 32(B) shows the appearance of the head mounted display 8200.

[0399] The head mounted display 8200 includes a mounting part 8201, a lens 8202, and a main body 82 8203, a display unit 8204, a cable 8205, etc. It has a built-in 8206 battery.

[0400] A cable 8205 supplies power from a battery 8206 to the main body 8203. 03 is equipped with a wireless receiver and the like, and image information such as image data received is displayed on a display unit 8204. In addition, the camera installed in the main body 8203 can record the movement of the user's eyeballs and eyelids. The system captures the user's gaze and calculates the coordinates of the user's gaze based on that information. It can be used as an input means.

[0401] Furthermore, the mounting unit 8201 may be provided with a plurality of electrodes at positions that come into contact with the user. The main body 8203 detects the current flowing through the electrodes in response to the movement of the user's eyeball, The device may have a function of recognizing the user's viewpoint. Also, the device may have a function of detecting the current flowing through the electrode. By doing so, the mounting unit 820 may have a function of monitoring the pulse of the user. The sensor 1 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor. The device may have a function of displaying the user's biological information on the display unit 8204. The image displayed on the display unit 8204 is changed according to the movement of the part. Good too.

[0402] The display device of one embodiment of the present invention can be applied to the display portion 8204.

[0403] 32(C) and (D) show the external appearance of the head mounted display 8300. .

[0404] The head mounted display 8300 includes a housing 8301, two display units 8302, and an operation It has a button 8303 and a band-like fastener 8304 .

[0405] The head mounted display 8300 is the same as the head mounted display 8200. In addition to the functions it has, it has two displays.

[0406] By having two displays 8302, the user can see one display per eye. This allows high-resolution images to be displayed even when performing 3D display using parallax. The display portion 8302 is a circular arc with the user's eye as its center. This ensures that the distance from the user's eyes to the display surface is constant. This allows users to see more natural images. Even if the image changes depending on the viewing angle, the image is displayed in the normal direction to the display surface. Because the user's eyes are located in the vicinity, the effect can be virtually ignored, resulting in a more realistic appearance. It is possible to display images with

[0407] The operation button 8303 has a function such as a power button. The display may have a button.

[0408] Also, as shown in FIG. 32(E), a lens is provided between the display unit 8302 and the position of the user's eyes. The lens 8305 allows a user to magnify the display portion 8302. This increases the sense of realism, as shown in Figure 32(E). , and may have a dial 8306 that changes the position of the lens for diopter adjustment.

[0409] The display device of one embodiment of the present invention can be applied to the display portion 8302. Since such a display device has extremely high definition, it is possible to use a lens 8305 as shown in FIG. Even when the image is enlarged, the pixels are not visible to the user, providing a more realistic image. It is possible.

[0410] 33(A) to (C) show an example in which one display unit 8302 is provided. By adopting such a configuration, the number of parts can be reduced.

[0411] The display unit 8302 has two areas, one for the right eye and one for the left eye, each of which is displayed on the left and right. Images can be displayed side-by-side, allowing stereoscopic images to be displayed using binocular parallax. It is possible.

[0412] In addition, even if a single image that can be viewed by both eyes is displayed across the entire area of ​​the display unit 8302, This makes it possible to display a panoramic image across both ends of the field of view, It makes it feel more real.

[0413] As shown in FIG. 33C, a lens 8305 may be provided. Two images may be displayed side by side, or one image may be displayed on the display unit 8302 and the other image may be displayed on the lens. The same image may be viewed with both eyes via the lens 8305.

[0414] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. EXAMPLES

[0415] In this example, a transistor that can be used in a display panel of one embodiment of the present invention was fabricated. did.

[0416] [Transistor structure] There are various transistor structures that can be used in a display panel. The two structures, a bottom-gate structure with a 3-layer etch and a top-gate structure, are Explain the features.

[0417] FIG. 34(A1) illustrates an example of a schematic top view of a top-gate transistor. The transistor includes a semiconductor layer 801, a conductive layer 802, and a pair of conductive layers 803. A part of the conductive layer 802 functions as a gate electrode. It functions as a source electrode or a drain electrode.

[0418] 34(A2) and (A3) show the channel length direction and the channel An example of a schematic cross-sectional view in the width direction is shown. An insulating layer 804 is provided on a semiconductor layer 801. A conductive layer 802 is provided over an insulating layer 804, and an insulating layer 805 is provided to cover the conductive layer 802. A pair of conductive layers 803 is provided over the insulating layer 805. The insulating layer 805 functions as a gate insulating layer. The semiconductor layer 801 functions as a source region or a drain region. The conductive layer 803 is provided on the insulating layer 805. It is connected to the low resistance region 808 through the opening.

[0419] FIG. 34(A4) shows a schematic cross-sectional view of the intersection of the conductive layer 802 and the conductive layer 803. For example, the conductive layer 802 is used as wiring such as a scanning line, and the conductive layer 803 is used as wiring such as a signal line. In the top gate structure, a conductive layer 802 and a conductive layer 803 are disposed between the conductive layers 802 and 803. Since it is easy to increase the thickness of the insulating layer 805 placed on the substrate, a bottom gate structure (to be described later) can be used. In comparison, the parasitic capacitance between the conductive layer 802 and the conductive layer 803 can be reduced. do.

[0420] Figures 34(B1), (B2), and (B3) show bottom gate MOSFETs with channel etched structures, respectively. A schematic top view of the structure, a schematic cross-sectional view in the channel length direction, and a schematic cross-sectional view in the channel width direction are shown in FIG. An insulating layer 804 is provided over the conductive layer 802, and a semiconductor layer is formed on the insulating layer 804. A pair of conductive layers 803 are provided in contact with a part of the upper surface of the semiconductor layer 801. An insulating layer 805 is provided to cover the conductive layer 803 and the semiconductor layer 801 .

[0421] In the bottom gate structure, the semiconductor layer 801 and the conductive layer 803 can be directly connected. Therefore, there is no need to form an opening in the insulating layer, which is necessary in the above-mentioned top gate structure. This allows the process to be simplified and makes it easy to reduce the size of the transistors. In addition, a part of the conductive layer 803 in contact with the semiconductor layer 801 and the conductive layer 802 are arranged to overlap each other. Therefore, compared to the top gate structure described above, the source and drain electrodes can be It is easy to shorten the distance between the

[0422] On the other hand, it is more difficult to reduce parasitic capacitance in the bottom gate structure than in the top gate structure. For example, the source electrode and the gate electrode, and the drain electrode and the gate A parasitic capacitance is formed at the portion where the electrode overlaps with the semiconductor layer 801 in between. As shown in FIG. 4(B4), an insulating layer 804 is provided between the conductive layer 802 and the conductive layer 803. Since the thickness of the MOSFET directly affects the electrical characteristics of the transistor, it is important to change the thickness of the MOSFET. Therefore, compared to the top gate structure described above, the conductive layer 802 and the conductive Therefore, it is difficult to reduce the parasitic capacitance between the conductive layers 803.

[0423] FIG. 35(A1) shows the top-gate structure transistor shown in FIG. 34(A1). The conductive layer 806 is a conductive layer that sandwiches the semiconductor layer 801. It is located on the opposite side to the layer 802, and a part of it functions as a second gate electrode.

[0424] 35(A2) and (A3) show the channel length and channel width of the transistor, respectively. An insulating layer 807 is provided covering the conductive layer 806. A semiconductor layer 801 is provided on the semiconductor layer 801. The structure above the semiconductor layer 801 is the same as that shown in FIG. Similar to (A2) etc.

[0425] As shown in FIG. 35(A1) and (A3), the conductive layer 802 and the conductive layer 806 are disposed between them. The connection is made through an opening provided in the insulating layer (insulating layer 804 and insulating layer 807) located at In this configuration, the current that can flow when the transistor is turned on (the on-current) is It is preferable that the conductive layer 802 and the conductive layer 806 are Alternatively, the transistors may be driven by applying different potentials without being connected. This makes it possible to control the threshold voltage of the transistor.

[0426] 35(A4) is a schematic cross-sectional view of the intersection of the conductive layer 806 and the conductive layer 803. Between 806 and the conductive layer 803, an insulating layer 807, an insulating layer 804, and an insulating layer 805 are provided. Therefore, by using the conductive layer 806 and the conductive layer 803 as wiring, This makes it easier to reduce the parasitic capacitance between them.

[0427] In high-resolution display panels, the number of wiring intersections increases, which creates problems with parasitic capacitance. Furthermore, in high-definition display panels, the density of wiring is increased, which leads to more parasitic In addition, if the parasitic capacitance increases, it becomes difficult to achieve high frequency operation. Therefore, the structure shown in FIG. 34(A1) and the structure shown in FIG. 35(A1) are This makes it suitable for applications that require higher resolution, higher definition, or higher frequency operation of display panels. It can be said that.

[0428] The transistors shown in FIG. 34(A1) and the transistors shown in FIG. 35(A1) and the like are When these are applied to the transistors 61 and 62 in the pixel configuration shown in FIG. In this case, a transistor having a channel etch type bottom gate structure as shown in FIG. 34(B1) is used. Compared with the case where the FET is used, the parasitic capacitance of the source line (wiring 52a, etc.) is reduced by about 13% and the parasitic capacitance of the gate line (wiring It is estimated that the parasitic capacitance of the MOSFET (e.g., MOSFET 51a) can be reduced by approximately 25%.

[0429] [Transistor characteristics] A transistor having the structure shown in FIG. 35(A1), (A2), (A3), etc. is manufactured. The results of measuring the electrical characteristics of the transistor are shown in Figure 36. Here, the gate-source voltage (V g) while measuring the source-drain current (Id) (also called the Vg-Id characteristic). The measured transistor has a crystalline oxide semiconductor in the semiconductor layer and a channel The channel length is 2 μm and the channel width is 2 μm. As shown in Figure 36, the channel length is extremely small. Despite the small size, good characteristics are obtained.

[0430] A method for manufacturing the transistors shown in FIGS. 35(A1), (A2), and (A3) will be described. do.

[0431] A glass substrate was used as a substrate supporting the transistor.

[0432] The conductive layer 806 is made of a titanium film and a silicon film, each having a thickness of about 10 nm, which are formed by sputtering. A laminated film of a copper film having a thickness of about 300 nm was used.

[0433] The insulating layer 807 is made of a nitride film having a thickness of about 400 nm, which is formed by the plasma CVD method. A laminated film of a silicon film and a silicon oxynitride film having a thickness of about 50 nm was used.

[0434] The semiconductor layer 801 is an IGZO (InP) film of about 40 nm thickness formed by sputtering. The IGZO film was prepared by setting the substrate temperature at 170 degrees and the deposition gas The gas used was a mixture of argon and oxygen gases in a ratio of 1:1, and the pressure was set at 0.2 Pa. The sputtering target was In, Ga, and Zn in a ratio of 4:2:4.1. The metal oxide target used was

[0435] The insulating layer 804 is a silicon oxynitride film having a thickness of about 150 nm formed by plasma CVD. After the insulating layer 804 was formed, it was heated at 350° C. for 1 hour in a nitrogen atmosphere. The theory was carried out.

[0436] The conductive layer 802 is made of IG with a thickness of about 20 nm, which is formed by sputtering. A laminated film of a ZO film, a tungsten film with a thickness of about 15 nm, and a titanium film with a thickness of about 100 nm was formed. The IGZO film had the same composition as the semiconductor layer 801. By placing a tungsten film in contact with the IGZO film, the conductivity of the IGZO film is increased, The IGZO film can be used as a part of the gate electrode.

[0437] The insulating layer 805 is made of a nitride film having a thickness of about 100 nm, which is formed by plasma CVD. A laminated film of a silicon film and a silicon oxynitride film with a thickness of about 300 nm was used. A silicon nitride film containing a large amount of hydrogen is placed in contact with the portion of the conductive layer 801 that is not covered by the conductive layer 802. By forming the film, hydrogen diffuses into the relevant portion, forming a low resistance region 808 in a self-aligned manner. It is possible.

[0438] The conductive layer 803 is a titanium film having a thickness of about 35 nm formed by sputtering. The laminated film used was a silicon film and a copper film with a thickness of approximately 300 nm.

[0439] The above is the description of the method for manufacturing a transistor.

[0440] By using such transistors in pixels and driver circuits of a display device, A high resolution display device can be realized. EXAMPLES

[0441] In this embodiment, the display panel illustrated in the second embodiment was manufactured.

[0442] [Light emitting element] FIG. 37 shows a schematic diagram of a stacked structure of a light-emitting element. The light-emitting element is made up of two light-emitting units stacked together. The light-emitting element has a tandem structure in which a light-emitting layer contains a blue fluorescent material. The light-emitting device has an emitting unit, an emitting layer containing a green phosphorescent material, and an emitting layer containing a red phosphorescent material. The light-emitting element has a light-emitting layer including a blue fluorescent material and a light-emitting layer including a green phosphorescent material. The organic EL element has an intermediate layer between the light emitting layer containing the organic EL element and the light emitting layer containing the organic EL element.

[0443] The intermediate layer used in the light-emitting element used in this example will be described. The intermediate layer is made of a blue fluorescent material. First, an electron transport layer is formed on the substrate side, and then lithium oxide (LiO 2 ) was evaporated onto the copper phthalocyanine film. CuPC (abbreviation: CuPC) was evaporated onto the substrate, and 4,4',4''-(benzene-1,3,5- (dibenzothiophene) (abbreviated as DBT3P-II) and molybdenum oxide (VI) was co-evaporated to form a film.

[0444] Here, when a tandem structure in which two or more light-emitting units are stacked is used as the light-emitting element, However, as pixel resolution increases, current flows between adjacent pixels through the intermediate layer. As a result, adjacent pixels that should not emit light emit light. This phenomenon is called crosstalk. You can do it.

[0445] One way to suppress crosstalk is to use highly conductive lithium oxide in the intermediate layer. One approach is to reduce the thickness of the layer containing lithium, but the other is to reduce the thickness of the layer containing lithium oxide, which has high electrical conductivity. The thickness is extremely thin (approximately 0.1 nm), and this thickness can be further reduced to achieve light emission. It was difficult to fabricate the element from the viewpoint of controlling the film thickness. If the thickness were to be reduced any further, there would be a risk of an increase in the driving voltage of the light-emitting device. The hole injection layer was fabricated by changing the concentration of DBT3P-II and molybdenum oxide. Attempts were made to suppress the loss of momentum.

[0446] First, we developed two types of hole injection layers with different concentrations of organic and inorganic compounds. The light-emitting device was fabricated and its current-voltage characteristics were measured. The size of the light-emitting device was 2 mm square. The sample had a ratio of DBT3P-II to molybdenum oxide in the hole injection layer of 1:0.25. The sample with the ratio of these two (Ref.1) was 1:0.175 (Sample1). Figure 38 shows the current-voltage characteristics of the two samples. It was confirmed that there was no deterioration in characteristics due to optimization of the injection layer.

[0447] [Color rendering evaluation] A display panel was fabricated, and the color rendering properties thereof were evaluated. The results are described below.

[0448] [Preparation of display panel] A method for manufacturing a display panel exemplified in this embodiment will be described. First, a peeling layer and a protective layer are Two glass substrates with a laminated structure are prepared, and transistors and light emitting devices are attached to one of the glass substrates. Optical elements and the like are formed, and color filters and the like are formed on the other glass substrate (FIG. 39(A)). After that, the two glass substrates were bonded together using an adhesive layer (Figure 39(B)). The glass substrate on which the transistors and light emitting elements are formed is peeled off and removed (Figure 39(C) )) and a film was attached using an adhesive layer (Figure 39(D)). Next, a color filter The substrate on which the ferroelectric film is formed is peeled off and removed (Figure 39(E)), and then the ferroelectric film is similarly attached using the adhesive layer. A film was attached (Figure 39(F)). The peeling layer was a tungsten film, a tungsten oxide film, A tungsten film and a silicon oxide film are laminated, with the tungsten oxide film as the boundary. A peeling method was used.

[0449] The display panel we created has a diagonal size of 2.78 inches and a pixel count of 2560× 1440, resolution (pixel density) 1058ppi, pixel size 24μm×24μm( 8μm×RGB×24μm), aperture ratio is 30.4%. The frame frequency is 60H z, with a built-in scan driver, and a built-in demultiplexer and C source driver. An IC implemented using the OF method was used in combination with this.

[0450] Here, comparative sample 2 (Ref.2), sample 2 (Sample2), and sample 3 (Sa Three types of display panels were fabricated: Comparison sample 2 and sample 3. This is a non-flexible display panel that uses a glass substrate without a release layer. The display panel is flexible and formed by the above-mentioned method. The light-emitting devices used in the experiment had hole injection layers made of conventional materials. Samples 2 and 3 were , the material of the hole injection layer is optimized.

[0451] [Display panel] 40(A) and (B) show photographs of the fabricated display panel (sample 3). In Fig. 40(B), the display surface is curved convexly (with a radius of curvature of 17. 5mm).

[0452] [Color rendering] FIG. 41 shows chromaticity diagrams for each of Comparative Sample 2, Sample 2, and Sample 3. As shown in FIG. 1, Samples 2 and 3, in which the material of the hole injection layer of the light-emitting device is optimized, are comparatively It was confirmed that the color reproducibility was improved compared to sample 1. In addition, most of the samples 2 and 3 It was confirmed that there was almost no difference in color reproduction. The NTSC ratio of flexible sample 3 was about 8 The rate was high at 8%.

[0453] [Evaluation of viewing angle dependency] A display panel was fabricated, and the viewing angle dependency thereof was evaluated. The results are described below.

[0454] [Preparation of display panel] Sample 4 (Sample 4), a flexible display panel, was fabricated in the same manner as Sample 3. ) was prepared.

[0455] [Viewing angle dependence] Next, the viewing angle dependence of chromaticity was measured for Sample 4. First, the direction perpendicular to the surface of the display panel is set to 0 degrees. The luminance spectrum was measured at five points, 60 degrees, 100 degrees, and 150 degrees. The chromaticity was calculated for each angle. The luminance spectrum was calculated by applying red, green, and blue light to the display panel. Measurements were performed for four different displays: white, red, and blue. The viewing angle dependence of chromaticity was also measured. The characteristics are parallel to the direction in which the same color pixels are arranged on the display panel, and perpendicular to this direction. Measured on the street.

[0456] FIG. 42(A) shows the measurement results in a direction parallel to the array direction of pixels of the same color, and FIG. 42(B) shows , the measurement results in the direction perpendicular to the arrangement direction of the same color pixels. is the rate of change in chromaticity when the data at 0 degrees is taken as the standard. Even if light leakage occurs from adjacent pixels, the color of the light will be the same, so the viewing angle dependency is relatively small. On the other hand, in Figure 42(B), the adjacent pixels are pixels of different colors, so the light from the adjacent pixels is When leakage occurs, the change in chromaticity becomes large. In the case of sample 4 of this embodiment, the angle is 60 degrees, It was also confirmed that the rate of change in chromaticity (Δu'v') was small, less than 0.1.

[0457] [Bending resistance] Next, the bending resistance of Sample 4 was evaluated. First, the sample was bent so that the display surface was on the outside. The radius of curvature is changed for both outward bending, where the display surface faces inward, and inward bending, where the display surface faces inward. The results showed that the bending radius was 5m for both the outward bending and the inward bending. Even when bent to 1 mm, 4 mm, 3 mm, and 2 mm, there were no defects such as cracks or display defects. It was confirmed that no problems occurred and the unit operated normally.

[0458] In addition, the display surface is subjected to bending and stretching motion in which a flat state and an inward or outward bending state are alternately repeated. The bending was performed with a radius of curvature of 3 mm and a radius of curvature of 2 mm for both inward and outward bending. Even after the tests were repeated 100,000 times, no display defects or cracks occurred. EXAMPLES

[0459] In this embodiment, the display panel illustrated in the first embodiment was manufactured.

[0460] [Preparation of display panel] In this embodiment, a pair of substrates is made of glass. A color filter and the like are formed on the other substrate, and these are then bonded together. The layout of the pixel area and wiring was the same as that shown in Figure 1(A). The layout of the sub-pixels provided in the pixel area is shown in FIG. The layout shown in Example B) was applied. The example transistor having a top gate structure was applied.

[0461] The specifications of the manufactured display panel are shown in Table 1.

[0462] [Table 1]

[0463] The display panel size is 8.34 inches, the smallest in the world for an 8K4K display. h and has an extremely high pixel density of 1058ppi. In addition, to improve the viewing angle characteristics, As exemplified in the first embodiment, the sub-pixels are arranged in a zigzag pattern. The pixel pitch is equivalent to 24μm x 24μm when the RGB stripe arrangement is used. Correct.

[0464] In addition, the semiconductor layer of the transistors of the pixel and the gate driver (Scan Driver) As an oxide semiconductor that can realize high field effect mobility, C-Axis Aligned Crystalline Oxide Semiconductor (CAAC-OS) This resulted in It is possible to realize a high-resolution display with a built-in gate driver.

[0465] In addition, the source driver is a COG, but the source line is shared between the two sub-pixels, Compared to a typical 8K4K display, the number of ICs can be reduced by half.

[0466] Figure 43 shows a photograph of the manufactured display panel. In addition to the pixel area, the wiring, The peripheral parts including the terminals, IC, and FPC are also shown.

[0467] In this way, a top-gate transistor using CAAC-OS as the semiconductor layer was applied. By using this technology, it is possible to reduce the parasitic capacitance of the source line and gate line, making it the world's smallest. We were able to create an 8K4K-OLED display of this size. The zigzag arrangement allows for a display that combines high definition with a wide viewing angle. It was made possible. [Explanation of symbols]

[0468] 10 Display device 11 Pixel section 12 Circuits 13 Circuit 14 Circuit 15a Terminal section 15b Terminal section 16a Wiring 16b Wiring 16c Wiring 17 IC 20 pixel units 21a pixel 21b pixels 22 Display area 30a straight line 30b straight line 30c rectangle 30d rectangle 31 Pixel electrode 31a Pixel electrode 31b Pixel electrode 32a Pixel electrode 32b Pixel electrode 33a Pixel electrode 33b Pixel electrode 41a Pixel circuit 41b Pixel circuit 42a Pixel circuit 42b Pixel circuit 43a Pixel circuit 43b Pixel circuit 51 Wiring 51a Wiring 51b Wiring 52 Wiring 52a Wiring 52b Wiring 52c Wiring 52d Wiring 53 Wiring 53a Wiring 53b Wiring 53c Wiring 53S Wiring Group 54 Wiring 55 Wiring 57 Wiring 60 Display element 60a Display element 60b Display element 61 Transistor 62 Transistor 63 Capacitive element 64 Transistor 71a Subpixel 71b Subpixel 72a Subpixel 72b subpixel 73a Subpixel 73b Subpixel 80 Circuits 81 Transistor 82 Transistor 83 Wiring 84 Wiring 85 Terminals 86 Output terminal 101 Substrate 102 Substrate 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Spacer 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 220 Adhesive layer 221 Insulating layer 222 EL layer 223 Electrode 224a Optical adjustment layer 224b Optical adjustment layer 230a Structure 230b Structure 231 Light blocking layer 232 Colored layer 232a Colored layer 232b Colored layer 241 FPC 242 FPC 243 Connection Layer 244 IC 250 space 251 Transistor 252 Transistor 260 Encapsulating material 261 Adhesive layer 262 Adhesive layer 271 Semiconductor Layer 272 Conductive Layer 273 Conductive Layer 274 Conductive Layer 275 Conductive Layer 276 Insulating Layer 281 Liquid Crystal 282 Overcoat 283 Conductive Layer 291 Conductive Layer 292 Conductive Layer 293 Conductive Layer 294 Insulating Layer 295 Adhesive layer 296 Board 297 FPC 298 Connection Layer 299 Terminal section 301 Preparation Board 303 Peeling layer 305 Peeling layer 307 Adhesive layer 321 Preparation Substrate 323 Peeling layer 325 Peeling layer 331 Substrate 333 Adhesive layer 341 Substrate 343 Adhesive layer 351 areas 801 Semiconductor layer 802 Conductive layer 803 Conductive layer 804 Insulating layer 805 Insulation layer 806 Conductive layer 807 Insulating layer 808 Low resistance region 7000 Display 7001 Display section 7100 Mobile Phone 7101 Case 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7200 Portable Information Terminal 7201 Case 7202 Operation button 7203 Information 7210 Portable Information Terminal 7300 Television Equipment 7301 Case 7303 Stand 7311 Remote control device 7400 Lighting Equipment 7401 Daibu 7403 Operation switch 7411 Light emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Portable Information Terminal 7701 Case 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Automobiles 7901 Body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog Lamp 7910 Display section 7911 Display section 7912 Display section 7913 Display section 7914 Display section 7915 Display section 7916 Display section 7917 Display section 8000 Chassis 8001 Display section 8003 Speaker 8101 Case 8102 Case 8103 Display section 8104 Display section 8105 Microphone 8106 Speaker 8107 Operation key 8108 Stylus 8111 Case 8112 Display section 8113 Keyboard 8114 Pointing Device 8200 Head Mounted Display 8201 Mounting part 8202 Lens 8203 Main unit 8204 Display section 8205 Cable 8206 Battery 8300 Head Mounted Display 8301 Case 8302 Display section 8303 Operation button 8304 Fixtures 8305 Lens 8306 Dial 8400 Camera 8401 Case 8402 Display section 8403 Operation button 8404 Shutter button 8406 Lens 8500 Finder 8501 Case 8502 Display section 8503 Button

Claims

[Claim 1] A display device having a plurality of pixel units, The pixel units are arranged in a matrix along a first direction and a second direction intersecting the first direction, The pixel unit includes first to sixth display elements, the first display element, the third display element, and the fifth display element are arranged in order along the first direction, the second display element, the fourth display element, and the sixth display element are arranged in order along the first direction, the first display element and the second display element, the third display element and the fourth display element, and the fifth display element and the sixth display element are each arranged along the second direction, the first display element and the fourth display element are display elements that exhibit a first color, the second display element and the fifth display element are display elements that exhibit a second color, the third display element and the sixth display element are display elements that exhibit a third color, A first wiring and a second wiring are included, The pixel unit includes first to sixth transistors, a gate of the first transistor, a gate of the third transistor, and a gate of the fifth transistor are electrically connected to the first wiring; a gate of each of the second transistor, the fourth transistor, and the sixth transistor is electrically connected to the second wiring; Display device.

Images