Mask and method for manufacturing mask

Abstract

To provide a mask that is suppressed in shadow.SOLUTION: In a mask, a first end 58 of a mask wall surface 57 is positioned closer to an inside than a second end 59, the wall surface includes: a first wall surface 571 positioned between a first virtual point P11 at which a first virtual straight line L11 intersects the wall surface and the first end; and a second wall surface 572 positioned between the first virtual point and a second end, where the first virtual straight line is a virtual straight line passing through the first end and the second end, the first wall surface includes a part positioned closer to an inside than the first virtual straight line, the wall surface includes a second dimension S12 that is a distance in an in-plane direction of a first surface between a second virtual point P12 at which a second virtual straight line L12 intersects the first surface and the first end, where the second virtual straight line is a virtual straight line passes through the second end and extends in a thickness direction, the first wall surface includes a third dimension S13 that is a distance in the in-plane direction of the first surface between the first virtual straight line and a third virtual straight line L13, and the third virtual straight line is a virtual straight line extends in parallel with the first virtual straight line and comes into contact with the first wall surface. The ratio of the third dimension to the second dimension is equal to or less than 0.120.SELECTED DRAWING: Figure 14A

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure relate to a mask and a method for manufacturing a mask. [Background technology]

[0002] Organic devices such as organic electroluminescence (EL) displays are attracting attention. A known method for forming elements of organic devices is to attach the material that constitutes the elements to a substrate by a physical film formation method such as vapor deposition. A substrate is prepared on which a first electrode is formed in a pattern corresponding to the elements. Then, an organic material is attached onto the first electrode through the through-holes of a mask. The organic material attached onto the first electrode constitutes an organic layer. Then, a second electrode is formed on the organic layer.

[0003] A method for manufacturing a mask is known in which a metal plate is etched to form through holes. The manufacturing method includes, for example, a first etching step of etching a first surface of a metal plate to form a plurality of first recesses on the first surface, a step of filling the first recesses with resin, and a second etching step of etching a second surface of the metal plate to form a plurality of second recesses on the second surface. The second recesses are connected to the first recesses to form through holes penetrating the metal plate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-111879 A Summary of the Invention [Problem to be solved by the invention]

[0005] In a deposition process using a mask, a phenomenon occurs in which the thickness of a layer formed on a substrate is reduced at the edge of the layer. This phenomenon is also called shadowing. Shadowing occurs when part of an area of ​​the substrate is hidden by the wall of a through hole in the mask.

[0006] One embodiment of the present disclosure aims to provide a mask with suppressed shadows. [Means for solving the problem]

[0007] A mask according to an embodiment of the present disclosure may include a plurality of through holes. The mask may include a metal plate including a first surface and a second surface located on the opposite side of the first surface in a thickness direction, a first end located on the first surface, and a second end located on the opposite side of the first end in the thickness direction, and a wall surface facing the through hole. The first end may be located on the inner side of the second end. The wall surface may include a first wall surface located between a first imaginary point where a first imaginary line and the wall surface intersect and the first end, and a second wall surface located between the first imaginary point and the second end. The first imaginary line is an imaginary line passing through the first end and the second end. The first wall surface may include a portion located on the inner side of the first imaginary line. The wall surface may have a second dimension that is a distance in an in-plane direction of the first surface between a second imaginary point where a second imaginary line and the first surface intersect and the first end. The second virtual line is a virtual line that passes through the second end and extends in the thickness direction. The first wall surface may have a third dimension that is a distance between the first virtual line and a third virtual line in an in-plane direction of the first surface. The third virtual line is a virtual line that extends parallel to the first virtual line and is tangent to the first wall surface. A ratio of the third dimension to the second dimension may be 0.120 or less. Effect of the Invention

[0008] A mask according to an embodiment of the present disclosure can suppress shadows. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view illustrating an example of an organic device. [Diagram 2] FIG. 2 is a plan view showing an example of an element of an organic device. [Diagram 3]FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 2 is a plan view showing an example of an organic device group. [Diagram 5] FIG. 1 is a cross-sectional view showing an example of a deposition apparatus. [Figure 6] FIG. 2 is a plan view showing an example of a mask device. [Figure 7] FIG. 2 is a plan view showing an example of a mask. [Figure 8] FIG. 4 is a perspective view showing an example of a through-hole group. [Figure 9] FIG. 4 is a cross-sectional view showing an example of a through-hole group. [Figure 10] 4 is a plan view showing an example of a through-hole group in a first surface. FIG. [Figure 11] 4 is a plan view showing an example of a through-hole group in a second surface. FIG. [Figure 12] FIG. 4 is a plan view showing an example of a second end. [Figure 13] FIG. 2 is a diagram showing an observation direction of a cross section of a mask. [Figure 14A] FIG. 2 is a diagram showing an example of a cross section of a mask. [Figure 14B] FIG. 4 is a cross-sectional view showing an example of a first wall surface. [Figure 14C] FIG. 4 is a cross-sectional view showing an example of a first wall surface. [Figure 15A] FIG. 2 is a cross-sectional view showing an example of a vapor deposition process. [Figure 15B] FIG. 2 is a plan view illustrating an example of an organic layer. [Figure 16] FIG. 2 is a cross-sectional view showing an example of a vapor deposition process. [Figure 17] FIG. 1 is a diagram illustrating an example of a mask manufacturing apparatus. [Figure 18] 10A to 10C are cross-sectional views showing an example of a resist forming step. [Figure 19] FIG. 4 is a cross-sectional view showing an example of an exposure step. [Figure 20] 1A to 1C are cross-sectional views showing an example of a patterning step. [Figure 21] FIG. 2 is a plan view showing an example of a first resist pattern. [Figure 22]FIG. 4 is a plan view showing an example of a second resist pattern. [Figure 23] FIG. 4 is a cross-sectional view showing an example of a first etching step. [Figure 24] FIG. 4 is a cross-sectional view showing an example of a filling step. [Diagram 25] FIG. 11 is a cross-sectional view showing an example of a second etching step. [Figure 26] FIG. 11 is a cross-sectional view showing an example of a second etching step. [Figure 27] FIG. 11 is a cross-sectional view showing an example of a second etching step. [Figure 28] FIG. 11 is a cross-sectional view showing an example of a removing step. [Figure 29] FIG. 11 is a cross-sectional view showing an example of a second etching step. [Diagram 30] FIG. 4 is a cross-sectional view showing an example of a wall surface. [Diagram 31] FIG. 11 is a cross-sectional view showing a second etching step in the first comparative embodiment. [Figure 32A] FIG. 13 is a diagram showing a cross section of a mask in a first comparative embodiment. [Figure 32B] FIG. 11 is a cross-sectional view showing a first wall surface in a first comparative embodiment. [Diagram 33] FIG. 11 is a cross-sectional view showing a second etching step in the second comparative embodiment. [Figure 34A] FIG. 13 is a cross-sectional view of a mask in a second comparative embodiment. [Figure 34B] FIG. 11 is a cross-sectional view showing a first wall surface in a second comparative embodiment. [Diagram 35] FIG. 4 is a perspective view showing an example of a through-hole group. [Diagram 36] FIG. 4 is a cross-sectional view showing an example of a through-hole group. [Figure 37] FIG. 11 is a cross-sectional view showing how a joining portion is formed in a second etching step. [Figure 38] 13 is a plan view showing an example of a joining portion at a second end of the wall surface. FIG. [Figure 39] FIG. 4 is a plan view showing an example of a through-hole group. [Diagram 40] FIG. 4 is a perspective view showing an example of a through-hole group. [Diagram 41] 13 is a plan view showing an example of a joining portion at a second end of the wall surface. FIG. [Diagram 42] FIG. 4 is a plan view showing an example of a through-hole group. [Diagram 43] FIG. 4 is a plan view showing an example of a through-hole group. [Diagram 44] FIG. 13 is a diagram showing a method for analyzing a cross-sectional image. [Diagram 45] 1 is a table showing the evaluation results of the masks of Examples A1 to A3. [Diagram 46] 1 is a table showing the evaluation results of the masks of Examples B1 to B3. [Figure 47A] FIG. 13 is a cross-sectional view of a mask in a third comparative embodiment. [Figure 47B] FIG. 13 is a cross-sectional view showing a first wall surface in a third comparative embodiment. [Figure 47C] FIG. 13 is a cross-sectional view showing a first wall surface in a third comparative embodiment. [Figure 48A] FIG. 13 is a cross-sectional view of a mask in a fourth comparative embodiment. [Figure 48B] FIG. 13 is a cross-sectional view showing a first wall surface in a fourth comparative embodiment. [Figure 48C] FIG. 13 is a cross-sectional view showing a first wall surface in a fourth comparative embodiment. [Figure 49] 13 is a diagram showing a first wall surface of a mask in one embodiment and a first wall surface of a mask in a fourth comparative embodiment superimposed on each other. FIG. [Figure 50] 13 is a diagram showing a first wall surface of a mask in one embodiment and a first wall surface of a mask in a fourth comparative embodiment superimposed on each other. FIG. [Figure 51] 13A to 13C are cross-sectional views showing a method for manufacturing a mask in a fifth comparative embodiment. [Figure 52] 13A to 13C are cross-sectional views showing a method for manufacturing a mask in a fifth comparative embodiment. [Diagram 53] 13A to 13C are cross-sectional views showing a method for manufacturing a mask in a fifth comparative embodiment. [Figure 54] 13A to 13C are cross-sectional views showing a method for manufacturing a mask in a fifth comparative embodiment. [Figure 55]FIG. 13 is a cross-sectional view of a mask in a fifth comparative embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] In this specification and drawings, unless otherwise specified, terms that refer to materials underlying a certain configuration, such as "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0011] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and the extent thereof, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions may be expected.

[0012] In this specification and drawings, unless otherwise specified, when a certain configuration such as a certain member or a certain region is described as being "on" or "under", "upper" or "lower" or "above" or "below" another configuration such as another member or another region, this includes the case where the certain configuration is in direct contact with the other configuration. It also includes the case where another configuration is included between a certain configuration and the other configuration, that is, where the configuration is indirectly in contact. Furthermore, unless otherwise specified, the words "on", "upper side", "upper", or "lower", "lower side", and "lower" may be used in the up-down direction.

[0013] In this specification and drawings, unless otherwise specified, the same or similar parts or parts having similar functions are denoted by the same or similar symbols, and repeated explanations may be omitted. In addition, the dimensional ratios of the drawings may differ from the actual ratios for the convenience of explanation, and some components may be omitted from the drawings.

[0014] In this specification and the drawings, unless otherwise specified, one embodiment of this specification may be combined with other embodiments to the extent that no contradiction occurs. In addition, other embodiments may be combined with each other to the extent that no contradiction occurs.

[0015] In the present specification and drawings, unless otherwise specified, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the steps or processes disclosed. In addition, the order of the steps or processes disclosed is arbitrary to the extent that no contradiction occurs.

[0016] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "~" includes the numerical values ​​before and after the symbol "~". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less".

[0017] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form components of a device for displaying or projecting images or videos for expressing virtual reality, so-called VR, or augmented reality, so-called AR. For example, the mask of this embodiment may be used to form components of a display device other than an organic EL display device, such as an electrode of a liquid crystal display device. For example, the mask of this embodiment may be used to form components of a device other than a display device, such as an electrode of a pressure sensor.

[0018] A first aspect of the present disclosure is a mask including a plurality of through holes, a metal plate including a first surface and a second surface located on the opposite side of the first surface in a thickness direction; a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction; and a wall surface facing the through hole, The first end is located more inward than the second end, the wall surface includes a first wall surface located between a first imaginary point where a first imaginary line and the wall surface intersect and the first end, and a second wall surface located between the first imaginary point and the second end, the first virtual line is a virtual line passing through the first end and the second end, the first wall surface includes a portion located inside the first virtual line, the wall surface has a second dimension that is a distance in an in-plane direction of the first surface between a second imaginary point where a second imaginary line and the first surface intersect and the first end, The second virtual line is a virtual line that passes through the second end and extends in the thickness direction, the first wall surface has a third dimension which is a distance between the first virtual line and a third virtual line in an in-plane direction of the first surface; the third virtual line is a virtual line extending parallel to the first virtual line and tangent to the first wall surface, The mask, wherein a ratio of the third dimension to the second dimension is less than or equal to 0.120.

[0019] A second aspect of the present disclosure may include the following configuration in the mask according to the first aspect described above: A ratio of the third dimension to the second dimension may be 0.030 or greater.

[0020] A third aspect of the present disclosure may include the following configuration in the mask according to the first or second aspect described above: A third imaginary point, which is a point where the third imaginary line and the first wall surface contact, may be located outside the first end.

[0021] A fourth aspect of the present disclosure may be a mask according to any one of the first to third aspects described above, further comprising the following configuration: The wall surface may have a reference height that is a distance in the thickness direction between the first end and the second end, and a ratio of the second dimension to the reference height may be 1.00 or less.

[0022] A fifth aspect of the present disclosure may be configured as follows in the mask according to the third or fourth aspect described above: The first wall surface may include an eleventh wall surface located between the third imaginary point and the first end, and a twelfth wall surface located between the third imaginary point and the first imaginary point, the eleventh wall surface may include a portion located on the inside of a seventh imaginary line, and the seventh imaginary line may be a virtual line passing through the first end and the third imaginary point.

[0023] A sixth aspect of the present disclosure may be the mask according to the fifth aspect described above, further comprising the following configuration: The twelfth wall surface may include a 3A2 virtual point, the 3A2 virtual point may be a virtual point where a 3A virtual line and the twelfth wall surface intersect, the 3A virtual line may be a virtual line obtained by shifting the 3rd virtual line inward by a first allowable error, the first allowable error may be 0.10 μm, and a ratio of a distance in the thickness direction between the 3rd virtual point and the 3A2 virtual point to the first allowable error may be 1.0 or more.

[0024] A seventh aspect of the present disclosure may be a mask according to any one of the first to sixth aspects described above, further comprising the following configuration: The wall surface may have a third height that is a distance in the thickness direction between the first end and a third imaginary point that is a point where the third imaginary line and the first wall surface meet, and a ratio of the third dimension to the third height may be 1.00 or less.

[0025] An eighth aspect of the present disclosure may be a mask according to any one of the first to seventh aspects described above, further comprising the following configuration: The plurality of through holes may be aligned in a first direction and a second direction in a plan view, and the second dimension and the third dimension may be determined in a cross section of the mask cut along a plane inclined at an angle of 45 degrees with respect to the first direction.

[0026] A ninth aspect of the present disclosure may be a mask according to any one of the first to eighth aspects described above, further comprising the following configuration: The second end may include two twenty-first sides facing each other in the second direction, and each of the two twenty-first sides may include a straight line portion.

[0027] A tenth aspect of the present disclosure may include the following configuration in the mask according to the ninth aspect described above: The plurality of through holes may include a first through hole and a second through hole adjacent to the first through hole in the second direction, and the 21st side of one of the first through holes may join with the 21st side of one of the first through holes.

[0028] An eleventh aspect of the present disclosure may include the following configuration in the mask according to the tenth aspect described above: The wall surface may have a junction height that is a distance in the thickness direction between the first end and a junction portion where the 21st side of one of the first through holes and the 21st side of one of the first through holes join together, and a ratio of the junction height to a thickness of the metal plate may be 0.50 or more.

[0029] A twelfth aspect of the present disclosure may be a mask according to any one of the first to eleventh aspects described above, further comprising the following configuration: The second end may include two 22nd sides facing each other in the first direction, and each of the two 22nd sides may include a straight line portion.

[0030] A thirteenth aspect of the present disclosure may be configured as follows in the mask according to the twelfth aspect described above: The plurality of through holes may include a first through hole and a third through hole adjacent to the first through hole in the first direction, and the 22nd side of one of the first through holes and the 22nd side of one of the third through holes may join together.

[0031] A fourteenth aspect of the present disclosure is a method for manufacturing a mask including a plurality of through holes, comprising the steps of: preparing a metal plate including a first surface and a second surface located on an opposite side of the first surface in a thickness direction; a resist pattern forming step of forming a first resist pattern on a first surface of a metal plate and forming a second resist pattern on a second surface of the metal plate; a first etching step of etching the first surface to form a plurality of first recesses in the first surface; a filling step of filling the first recess with a resin; a second etching step of etching the second surface to form a plurality of second recesses in the second surface; In the second etching step, each of the second recesses is connected to a corresponding one of the first recesses, In the second etching step, a groove is formed between the metal plate and the resin.

[0032] A fifteenth aspect of the present disclosure may include the following configuration in the method for producing a mask according to the fourteenth aspect described above: In the second etching step, a surface of the resin may be dissolved in an etching solution.

[0033] A sixteenth aspect of the present disclosure may be the method for manufacturing a mask according to the fourteenth or fifteenth aspect described above, further comprising the following configuration: the mask may include a wall surface facing the through hole, the wall surface may include a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction, the first end may be located on the inner side of the second end, the wall surface may include a first wall surface located between a first imaginary point where a first imaginary line and the wall surface intersect and the first end, and a second wall surface located between the first imaginary point and the second end, the first imaginary line may be a virtual line passing through the first end and the second end, the first wall surface may include a portion located on the inner side of the first imaginary line, a third imaginary point where a third imaginary line and the first wall surface contact each other may not be in contact with the resin, and the third imaginary line may be a virtual line extending parallel to the first imaginary line and in contact with the first wall surface.

[0034] A seventeenth aspect of the present disclosure may include the following configuration in the method for manufacturing a mask according to the sixteenth aspect described above: A distance between the third virtual point and the resin in an in-plane direction of the first surface may be 0.5 μm or more.

[0035] An eighteenth aspect of the present disclosure may include the following configuration in the method for manufacturing a mask according to the sixteenth or seventeenth aspect described above: The third virtual point may be located outside the first end.

[0036] A nineteenth aspect of the present disclosure may be the method for manufacturing a mask according to any one of the fourteenth to eighteenth aspects described above, further comprising the following configuration: The second surface may include a rib located between two adjacent through holes in a plan view. The rib is a portion of the second surface that is not etched in the second etching step.

[0037] A twentieth aspect of the present disclosure may include the following configuration in the method for manufacturing a mask according to any one of the sixteenth to eighteenth aspects described above: the plurality of through holes may be aligned in a first direction and a second direction in a plan view, the second end may include two twenty-first sides facing each other in the second direction, the plurality of through holes may include a first through hole and a second through hole adjacent to the first through hole in the second direction, the twenty-first side of one of the first through holes may join with the twenty-first side of one of the first through holes, the wall surface may have a joining height that is a distance in the thickness direction between the first end and a joining portion where the twenty-first side of one of the first through holes and the twenty-first side of one of the first through holes join, and a ratio of the joining height to a thickness of the metal plate may be 0.50 or more.

[0038] An embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of the present disclosure, and the present disclosure is not to be interpreted as being limited to these embodiments.

[0039] An organic device 100 will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Fig. 1 is a plan view showing an example of the organic device 100 when viewed along the normal direction of the substrate of the organic device 100. In the following description, viewing along the normal direction of the surface of a base material such as a substrate is also referred to as a planar view.

[0040] The organic device 100 includes a substrate and a plurality of elements 115 arranged along an in-plane direction of the substrate. The elements 115 are, for example, pixels. Fig. 2 is an enlarged plan view of the organic device 100. The elements 115 may be arranged along two different directions. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 2.

[0041] The organic device 100 may comprise a substrate 110, a plurality of first electrodes 120, a plurality of organic layers 130, and a second electrode 140. The substrate 110 includes a first side 111 and a second side 112. The second side 112 is located opposite the first side 111.

[0042] The plurality of first electrodes 120 may be located on the first surface 111. The plurality of organic layers 130 may be located on the first electrodes 120. The second electrode 140 may be located on the organic layer 130. The second electrode 140 may extend so as to overlap the plurality of first electrodes 120 in a planar view. The element 115 is configured by a laminated structure including the first electrode 120, the organic layer 130, and the second electrode 140. The element 115 can realize some function by applying a voltage between the first electrode 120 and the second electrode 140, or by causing a current to flow between the first electrode 120 and the second electrode 140.

[0043] The organic device 100 may be an active matrix type. For example, although not shown, the organic device 100 may include a switch electrically connected to each of the multiple elements 115. The switch is, for example, a transistor. The switch can control the ON / OFF of a voltage applied to the element 115 or a current flowing through the element 115.

[0044] 2 and 3, the organic layers 130 may include a plurality of first organic layers 130A, a plurality of second organic layers 130B, and a plurality of third organic layers 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. When describing a configuration common to the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C, the term and symbol "organic layer 130" are used.

[0045] 2 and 3, the multiple first electrodes 120 may include multiple 1A electrodes 120A, multiple 1B electrodes 120B, and multiple 1C electrodes 120C. The 1A electrode 120A overlaps the first organic layer 130A in a planar view. The 1B electrode 120B overlaps the second organic layer 130B in a planar view. The 1C electrode 120C overlaps the third organic layer 130C in a planar view. When describing a configuration common to the 1A electrode 120A, the 1B electrode 120B, and the 1C electrode 120C, the term and symbol "first electrode 120" are used.

[0046] One element 115 may include at least one first sub-element 115A, at least one second sub-element 115B, and at least one third sub-element 115C. The first sub-element 115A includes a 1A electrode 120A, a first organic layer 130A, and a second electrode 140. The second sub-element 115B includes a 1B electrode 120B, a second organic layer 130B, and a second electrode 140. The third sub-element 115C includes a 1C electrode 120C, a third organic layer 130C, and a second electrode 140. In the example shown in FIG. 2, one element 115 includes one first sub-element 115A, one second sub-element 115B, and two third sub-elements 115C.

[0047] The element formed by using the mask may be the organic layer 130 or the second electrode 140. The element formed by using the mask is also called a deposited layer.

[0048] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120 in a plan view.

[0049] The components of the organic device 100 will now be described in detail.

[0050] The substrate 110 may be a plate-like member having insulating properties. The substrate 110 is preferably transparent to transmit light. The material of the substrate 110 may be, for example, a rigid material with no flexibility, such as quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a flexible material with flexibility, such as a resin film, an optical resin plate, or thin glass. The substrate 110 may be a laminate having a barrier layer on one or both sides of a resin film.

[0051] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140, or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, when the element 115 is a pixel of an organic EL display device, the element 115 emits light that constitutes an image.

[0052] The first electrode 120 includes a material having electrical conductivity. For example, the first electrode 120 includes a metal, a metal oxide having electrical conductivity, or other inorganic material having electrical conductivity. The first electrode 120 may include a metal oxide having transparency and electrical conductivity, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0053] The organic layer 130 includes an organic material. When a current is applied to the organic layer 130, the organic layer 130 can perform some function. Applying a current means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. As the organic layer 130, a light-emitting layer that emits light when a current is applied can be used. The organic layer 130 may include an organic semiconductor material. The characteristics of the organic layer 130, such as the transmittance and refractive index, may be appropriately adjusted.

[0054] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. When the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0055] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

[0056] The second electrode 140 includes a material having electrical conductivity, such as a metal. The second electrode 140 is formed on the organic layer 130 by a deposition method using a mask. The second electrode 140 may be made of platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, or the like. These materials may be used alone or in combination of two or more. When two or more types are used, layers made of each material may be stacked. An alloy containing two or more types of materials may also be used. For example, magnesium alloys such as MgAg, and aluminum alloys such as AlLi, AlCa, and AlMg may be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material for the second electrode 140. An alloy of alkali metals and alkaline earth metals may also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, or the like may be used.

[0057] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of the other element 115.

[0058] 2 and 3, the second electrode 140 may extend so as to overlap a plurality of the first electrodes 120. For example, the second electrode 140 may extend over the entire display area of ​​the organic device 100 in a plan view.

[0059] In the manufacturing method of the organic device 100, an organic device group 102 shown in FIG. 4 may be manufactured. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in the x-direction Dx and the y-direction Dy. The y-direction Dy is a direction perpendicular to the x-direction Dx. The two or more organic devices 100 may have a common substrate 110. For example, the organic device group 102 may be located on the substrate 110 and include layers such as a first electrode 120, an organic layer 130, and a second electrode 140 constituting two or more organic devices 100. The organic device group 102 is divided to obtain the organic device 100.

[0060] The x-direction Dx may be the longitudinal direction of a mask, which will be described later.

[0061] Next, a method for forming a deposition layer such as the organic layer 130 by a deposition method will be described. Fig. 5 is a diagram showing a deposition apparatus 10. The deposition apparatus 10 performs a deposition process for depositing a deposition material on a substrate 110.

[0062] As shown in Fig. 5, the deposition apparatus 10 may include therein a deposition source 6, a heater 8, and a mask device 15. The deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible, and contains a deposition material 7 such as an organic material or a metal material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere. The mask device 15 is disposed to face the crucible 6.

[0063] 5, the mask device 15 includes at least one mask 50. The mask device 15 may include a mask support 40 that supports the mask 50. The mask support 40 may include a frame 41 that includes an opening 43. The mask 50 may be fixed to the frame 41 so as to cross the opening 43 in a plan view. The frame 41 may support the mask 50 in a state where it is pulled in the plane direction so as to suppress bending of the mask 50.

[0064] 5, the mask device 15 is disposed in the deposition device 10 such that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 that allow the deposition material 7 flying from the deposition source 6 to pass through. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as a first surface 551. The surface of the mask 50 located on the opposite side to the first surface 551 in the thickness direction of the mask 50 is referred to as a second surface 552.

[0065] As shown in FIG. 5, the deposition apparatus 10 may include a substrate holder 2 that holds a substrate 110. The substrate holder 2 may be movable in a thickness direction of the substrate 110. The substrate holder 2 may be movable in a surface direction of the substrate 110. The substrate holder 2 may be configured to control the inclination of the substrate 110. For example, the substrate holder 2 may include a plurality of chucks attached to the outer edge of the substrate 110. Each chuck may be independently movable in the thickness direction or surface direction of the substrate 110.

[0066] By moving at least one of the substrate holder 2 and the mask holder 3, the position of the mask 50 relative to the substrate 110 can be adjusted.

[0067] 5, the deposition apparatus 10 may include a cooling plate 4 disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating a coolant inside the cooling plate 4. The cooling plate 4 can suppress an increase in temperature of the substrate 110 during the deposition process.

[0068] The deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110 as shown in FIG. 5. The magnet 5 may be disposed on the surface of the cooling plate 4 far from the substrate 110. The magnet 5 can attract the mask 50 to the substrate 110 side by magnetic force. This can reduce or eliminate the gap between the mask 50 and the substrate 110. This can suppress the occurrence of a shadow in the deposition process. The shape of the deposition layer is the thickness of the deposition layer, the dimensions of the deposition layer in a plan view, etc. The mask 50 may be attracted to the substrate 110 side by an electrostatic chuck that utilizes electrostatic force.

[0069] 6 is a plan view showing the mask device 15 as viewed from the first surface 551 side. The mask device 15 may include a mask support 40 including a frame 41, and a mask 50 fixed to the frame 41. The mask device 15 may include two or more masks 50 arranged in the y direction Dy. The frame 41 supports the mask 50 with tension applied to the mask 50 in the x direction Dx to prevent the mask 50 from bending.

[0070] The frame 41 may include a pair of first sides 411 extending in the x-direction Dx, a pair of second sides 412 extending in the y-direction Dy, and an opening 43. The second sides 412 may be longer than the first sides 411. The pair of first sides 411 and the pair of second sides 412 are in contact with the opening 43 in a plan view.

[0071] The mask 50 may include a first side edge 501 and a second side edge 502 extending in the x-direction Dx, and a first end 503 and a second end 504. The first end 503 and the second end 504 are ends of the mask 50 in the x-direction Dx.

[0072] In a plan view, the mask 50 includes a first end 51a, a second end 51b, and an intermediate portion 52. The first end 51a and the second end 51b face each other in the x-direction Dx. The intermediate portion 52 is located between the first end 51a and the second end 51b. The intermediate portion 52 includes a group of through holes 53.

[0073] The term "planar view" means that the object is viewed along the thickness direction of the mask 50.

[0074] The mask 50 is fixed to the second side 412. Specifically, the first end 51a is fixed to the first second side 412, and the second end 51b is fixed to the second second side 412. The first end 51a and the second end 51b may be fixed to the first second side 412 and the second second side 412 by welding. The middle portion 52 overlaps the opening 43 of the frame 41 in a plan view.

[0075] 7 is a plan view showing an example of the mask 50. The through-hole group 53 of the intermediate portion 52 includes a plurality of through-holes 56 arranged regularly in a plan view. The through-holes 56 may be arranged periodically in two directions. For example, the through-holes 56 may be arranged periodically in the x-direction Dx and the y-direction Dy.

[0076] One through-hole group 53 corresponds to one organic device 100. For example, a plurality of first organic layers 130A included in one organic device 100 are formed of a deposition material that has passed through a plurality of through-holes 56 of one through-hole group 53. The mask 50 includes at least one through-hole group 53. The mask 50 may include two or more through-hole groups 53 aligned in the x-direction Dx.

[0077] The mask 50 will be described in detail. Fig. 8 is a perspective view showing an example of the through-hole group 53 on the second surface 552 of the mask 50. Fig. 9 is a cross-sectional view showing an example of the through-hole group 53. Fig. 9 is a cross-sectional view taken along line IX-IX in Fig. 8.

[0078] The mask 50 includes a metal plate 55. The metal plate 55 includes a first surface 551 and a second surface 552. Each of the through holes 56 of the through hole group 53 penetrates from the first surface 551 to the second surface 552.

[0079] The mask 50 includes a plurality of wall surfaces 57. Each of the plurality of wall surfaces 57 faces the through hole 56. The wall surface 57 is generated by forming the through hole 56 in the metal plate 55. The wall surface 57 includes a first end 58 and a second end 59. The first end 58 may be located on the first surface 551. The first end 58 may form an outline of the through hole 56 in a plan view of the first surface 551 of the mask 50. The second end 59 is located on the opposite side of the first end 58 in the thickness direction Et. The thickness direction Et is a direction perpendicular to the first surface 551. The second end 59 may form an outline of the through hole 56 in a plan view of the second surface 552 of the mask 50. The second end 59 may surround the first end 58 in a plan view. The second end 59 may be located on the second surface 552.

[0080] As used herein, the term "first side 551" with respect to the mask 50 refers to the area of ​​the first side 551 of the metal plate 55 that is not etched by the first etching step described below. As used herein, the term "second side 552" with respect to the mask 50 refers to the area of ​​the second side 552 of the metal plate 55 that is not etched by the second etching step described below.

[0081] 8 and 9, the second surface 552 of the mask 50 may include a rib 553. The rib 553 is a region of the second surface 552 located between two adjacent through holes 56 in a plan view. The rib 553 is generated when the region of the second surface 552 located between the two through holes 56 remains unetched in the second etching step described later.

[0082] The first end 58 may be located more inward than the second end 59. "Inward" refers to the side closer to the center point C3 of the through hole 56 in a plan view. "Outward" described below refers to the side farther from the center point C3 of the through hole 56 in a plan view.

[0083] The materials of the metal plate 55 and the frame 41 will be described. An iron alloy containing nickel can be used as the main material of the mask 50 and the frame 41. This can reduce the difference between the thermal expansion coefficient of the mask 50 and the frame 41 and the thermal expansion coefficient of the substrate 110 containing glass. This can prevent the dimensional accuracy or positional accuracy of the deposition layer formed on the substrate 110 from decreasing due to the thermal expansion of the mask 50, the frame 41, the substrate 110, etc.

[0084] The nickel content in the iron alloy may be, for example, 28% by mass or more, 30% by mass or more, or 34% by mass or more. The nickel content in the iron alloy may be, for example, 38% by mass or less, 44% by mass or less, or 54% by mass or less. The range of the nickel content in the iron alloy may be determined by a first group consisting of 28%, 30% by mass and 34% by mass, and / or a second group consisting of 38%, 44% by mass and 54% by mass. The range of the nickel content in the iron alloy may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the nickel content in the iron alloy may be determined by a combination of any two of the values ​​included in the first group described above. The range of the nickel content in the iron alloy may be determined by a combination of any two of the values ​​included in the second group described above. The nickel content in the iron alloy may be, for example, 28% by mass or more and 54% by mass or less, 28% by mass or more and 44% by mass or less, 28% by mass or more and 38% by mass or less, 28% by mass or more and 34% by mass or less, 28% by mass or more and 30% by mass or less, 30% by mass or more and 54% by mass or less, 30% by mass or more and 44% by mass or less, 30% by mass or more and 38% by mass or less, 30% by mass or more and 34% by mass or less, 34% by mass or more and 54% by mass or less, 34% by mass or more and 44% by mass or less, 34% by mass or more and 38% by mass or less, 38% by mass or more and 54% by mass or less, 38% by mass or more and 44% by mass or less, or 44% by mass or more and 54% by mass or less.

[0085] The iron alloy may further contain cobalt in addition to nickel. For example, an iron alloy having a nickel and cobalt content of 28% by mass or more and 54% by mass or less in total and a cobalt content of 0% by mass or more and 6% by mass or less may be used as the material for the metal plate 55 of the mask 50.

[0086] The total content of nickel and cobalt in the metal plate 55 may be 28% by mass or more and 38% by mass or less. In this case, specific examples of the iron alloy containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less of nickel, the balance being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less of nickel, cobalt, and the balance being iron and unavoidable impurities. Ultra Invar is an iron alloy containing 28% by mass or more and 34% by mass or less of nickel, 2% by mass or more and 7% by mass or less of cobalt, 0.1% by mass or more and 1.0% by mass or less of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the balance being iron and unavoidable impurities.

[0087] If the temperatures of the mask 50, the frame 41, and the substrate 110 do not reach high temperatures during the deposition process, there is no particular need to set the thermal expansion coefficients of the mask 50 and the frame 41 to values ​​equivalent to that of the substrate 110. In this case, materials other than the above-mentioned iron alloys may be used as materials constituting the metal plate 55. For example, iron alloys other than the above-mentioned iron alloys containing nickel, such as iron alloys containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy so-called stainless steel may be used. In addition, alloys other than iron alloys, such as nickel and nickel-cobalt alloys, may be used.

[0088] The mask 50 has a thickness T0. The thickness T0 is the distance in the thickness direction Et between the first surface 551 and the second surface 552. The thickness T0 may be, for example, 8 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T0 may be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 80 μm or less. The range of the thickness T0 may be determined by a first group consisting of 8 μm, 10 μm, 15 μm, and 20 μm, and / or a second group consisting of 25 μm, 30 μm, 50 μm, and 80 μm. The range of the thickness T0 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the thickness T0 may be determined by a combination of any two of the values ​​included in the first group described above. The range of thickness T0 may be determined by a combination of any two of the values ​​included in the second group described above. For example, thickness T0 may be 8 μm or more and 80 μm or less, 8 μm or more and 50 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 80 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, or 15 μm or more and 80 μm or less. Alternatively, the thickness T0 of the mask 50 may be 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 80 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 80 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 80 μm or less, 30 μm or more and 50 μm or less, or 50 μm or more and 80 μm or less.

[0089] By setting the thickness T0 to 80 μm or less, it is possible to prevent the deposition material 7 from adhering to the wall surface 57 of the through-hole 56 before the deposition material 7 passes through the through-hole 56. This makes it possible to improve the utilization efficiency of the deposition material 7. Furthermore, by setting the thickness T0 to 8 μm or more, it is possible to ensure the strength of the mask 50 and to prevent the mask 50 from being damaged or deformed.

[0090] The thickness T0 is measured by a contact measurement method using a high-precision digital length measuring instrument, Litematic VL-50S, manufactured by Mitutoyo Corporation.

[0091] Fig. 10 is a plan view showing an example of the through hole group 53 on the first surface 551. Fig. 11 is a plan view showing an example of the through hole group 53 on the second surface 552. The through holes 56 of the through hole group 53 may be aligned in a first direction E1 and a second direction E2. The second direction E2 is a direction different from the first direction E1. The second direction E2 may be a direction perpendicular to the first direction E1.

[0092] The first direction E1 and the second direction E2 are determined based on the arrangement pitch of the multiple second ends 59. The first direction E1 and the second direction E2 are two directions in which the arrangement pitch of the multiple second ends 59 is the smallest. As shown in FIG. 11, the multiple second ends 59 are arranged at a first pitch P21 in the first direction E1. The multiple second ends 59 are arranged at a second pitch P22 in the second direction E2. The first pitch P21 and the second pitch P22 are smaller than the arrangement pitch of the multiple second ends 59 in directions other than the first direction E1 and the second direction E2. For example, the first pitch P21 and the second pitch P22 are smaller than the arrangement pitch of the multiple second ends 59 in the third direction E3 and the fourth direction E4. The multiple second ends 59 are also arranged in the third direction E3 and the fourth direction E4. The third direction E3 and the fourth direction E4 are inclined with respect to the first direction E1 and the second direction E2. The inclination angle of the third direction E3 with respect to the first direction E1 may be 45 degrees, and the inclination angle of the fourth direction E4 with respect to the second direction E2 may be 45 degrees.

[0093] The first pitch P21 and the second pitch P22 are determined according to the distribution density of the deposition layer formed on the substrate 110. The first pitch P21 and the second pitch P22 may be, for example, 15 μm or more, 30 μm or more, or 60 μm or more. The first pitch P21 and the second pitch P22 may be, for example, 100 μm or less, 150 μm or less, or 250 μm or less. The ranges of the first pitch P21 and the second pitch P22 may be determined by a first group consisting of 15 μm, 30 μm, and 60 μm, and / or a second group consisting of 100 μm, 150 μm, and 250 μm. The ranges of the first pitch P21 and the second pitch P22 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The ranges of the first pitch P21 and the second pitch P22 may be determined by a combination of any two of the values ​​included in the first group described above. The ranges of the first pitch P21 and the second pitch P22 may be determined by a combination of any two of the values ​​included in the second group described above. The first pitch P21 and the second pitch P22 may be, for example, 15 μm or more and 250 μm or less, 15 μm or more and 150 μm or less, 15 μm or more and 100 μm or less, 15 μm or more and 60 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 250 μm or less, 30 μm or more and 150 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 60 μm or less, 60 μm or more and 250 μm or less, 60 μm or more and 150 μm or less, 60 μm or more and 100 μm or less, 100 μm or more and 250 μm or less, 100 μm or more and 150 μm or less, or 150 μm or more and 250 μm or less.

[0094] As shown in FIG. 10, the multiple first ends 58 may also be aligned in the first direction E1 and the second direction E2.

[0095] 10 , each of the multiple first ends 58 may include two eleventh sides 581. The two eleventh sides 581 face each other in the second direction E2. Each of the multiple first ends 58 may include two twelfth sides 582. The two twelfth sides 582 face each other in the first direction E1. The first ends 58 may be composed of the two eleventh sides 581 and the two twelfth sides 582.

[0096] The eleventh side 581 has a dimension R11. The dimension R11 is the maximum distance between the two twelfth sides 582 in the first direction E1. The twelfth side 582 has a dimension R12. The dimension R12 is the maximum distance between the two eleventh sides 581 in the second direction E2.

[0097] Each of the two eleventh sides 581 may include a straight portion that extends linearly. The straight portion of the eleventh side 581 may extend in the first direction E1. The straight portion of the eleventh side 581 has a length R11s.

[0098] R11s / R11, which is the ratio of the length R11s to the dimension R11, may be, for example, 0.10 or more, 0.30 or more, or 0.50 or more. R11s / R11 may be, for example, 0.80 or less, 1.10 or less, or 1.50 or less. The range of R11s / R11 may be defined by a first group consisting of 0.10, 0.30, and 0.50, and / or a second group consisting of 0.80, 1.10, and 1.50. The range of R11s / R11 may be defined by a combination of any one of the values ​​included in the above-mentioned first group and any one of the values ​​included in the above-mentioned second group. The range of R11s / R11 may be defined by a combination of any two of the values ​​included in the above-mentioned first group. The range of R11s / R11 may be defined by a combination of any two of the values ​​included in the above-mentioned second group. R11s / R11 may be, for example, 0.10 or more and 1.50 or less, 0.10 or more and 1.10 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.30 or more and 1.50 or less, 0.30 or more and 1.10 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.50 or less, 0.50 or more and 1.50 or less, 0.50 or more and 1.10 or less, 0.50 or more and 0.80 or less, 0.80 or more and 1.50 or less, 0.80 or more and 1.10 or less, or 1.10 or more and 1.50 or less.

[0099] Each of the two twelfth sides 582 may include a straight portion that extends linearly. The straight portion of the twelfth side 582 may extend in the second direction E2. The straight portion of the twelfth side 582 has a length R12s.

[0100] The numerical range for R12s / R12, which is the ratio of the length R12s to the dimension R12, may be the same as the numerical range described above for R11s / R11.

[0101] The eleventh side 581 and the twelfth side 582 may be connected to each other. The portion of the first end 58 where the eleventh side 581 and the twelfth side 582 are connected to each other may be curved.

[0102] The dimensions R11 and R12 are determined according to the dimensions of the deposition layer formed on the substrate 110. The dimensions R11 and R12 may be, for example, 10 μm or more, 25 μm or more, or 50 μm or more. The dimensions R11 and R12 may be, for example, 80 μm or less, 110 μm or less, or 150 μm or less. The ranges of the dimensions R11 and R12 may be determined by a first group consisting of 10 μm, 25 μm, and 50 μm, and / or a second group consisting of 80 μm, 110 μm, and 150 μm. The ranges of the dimensions R11 and R12 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The ranges of the dimensions R11 and R12 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the dimensions R11 and R12 may be defined by a combination of any two of the values ​​included in the second group mentioned above. The dimensions R11 and R12 may be, for example, 10 μm or more and 150 μm or less, 10 μm or more and 110 μm or less, 10 μm or more and 80 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 25 μm or less, 25 μm or more and 150 μm or less, 25 μm or more and 110 μm or less, 25 μm or more and 80 μm or less, 25 μm or more and 50 μm or less, 50 μm or more and 150 μm or less, 50 μm or more and 110 μm or less, 50 μm or more and 80 μm or less, 80 μm or more and 150 μm or less, 80 μm or more and 110 μm or less, or 110 μm or more and 150 μm or less.

[0103] Dimensions of the components appearing on the first surface 551, such as dimension R11 and dimension R12, are calculated by observing the through-hole group 53 on the first surface 551. Dimensions of the components appearing on the second surface 552, such as the first pitch P21 and the second pitch P22, are calculated by observing the through-hole group 53 on the second surface 552. An AMIC-2500 manufactured by Shinto S Precision Co., Ltd. is used as a measuring instrument.

[0104] The dimensions R11 and R12 are each calculated by averaging ten measured values ​​calculated based on the area of ​​the first surface 551 corresponding to the ten through holes 56. The first pitch P21 and the second pitch P22 are each calculated by averaging ten measured values ​​calculated based on the area of ​​the second surface 552 corresponding to the ten through holes 56. The ten through holes 56 are extracted in the same manner as in the case of a method for observing the cross-sectional shape of the mask 50, which will be described later.

[0105] 11 , each of the multiple second ends 59 may include two 21st sides 591. The two 21st sides 591 face each other in the second direction E2. Each of the multiple second ends 59 may include two 22nd sides 592. The two 22nd sides 592 face each other in the first direction E1. The second end 59 may be composed of the two 21st sides 591 and the two 22nd sides 592.

[0106] The 21st side 591 has a dimension R21. The dimension R21 is the maximum distance between the two 22nd sides 592 in the first direction E1. The 22nd side 592 has a dimension R22. The dimension R22 is the maximum distance between the two 21st sides 591 in the second direction E2.

[0107] Each of the two second-first sides 591 may include a straight portion that extends linearly. The straight portion of the second-first side 591 may extend in the first direction E1. The straight portion of the second-first side 591 has a length R21s.

[0108] The numerical range of R21s / R21, which is the ratio of the length R21s to the dimension R21, may be the same as the numerical range described above for R11s / R11.

[0109] Each of the two second sides 592 may include a straight portion that extends linearly. The straight portion of the second side 592 may extend in the second direction E2. The straight portion of the second side 592 has a length R22s.

[0110] The numerical range for R12s / R12, which is the ratio of the length R22s to the dimension R22, may be the same as the numerical range described above for R11s / R11.

[0111] The twenty-first side 591 and the twenty-second side 592 may be connected to each other. The portion of the second end 59 where the twenty-first side 591 and the twenty-second side 592 are connected to each other may be curved.

[0112] 11, the rib 553 of the second surface 552 may include a portion located between two adjacent second ends 59 in the first direction E1. The rib 553 of the second surface 552 may include a portion located between two adjacent second ends 59 in the second direction E2. The rib 553 of the second surface 552 may include a portion located between two adjacent second ends 59 in the third direction E3. The portion of the rib 553 located between the two adjacent second ends 59 in the third direction E3 may also be located between the two adjacent second ends 59 in the fourth direction E4.

[0113] A description will now be given of the straight line portions of the first end 58 and the second end 59. FIG.

[0114] The straight line portion of the 21st side 591 is a portion of the 21st side 591 located between a straight line SL1 extending in the first direction E1 and a straight line SL2 extending parallel to the straight line SL1. The straight line SL1 is located outside the 21st side 591 and is tangent to the 21st side 591. The straight line SL2 is located inside the straight line SL1. The distance between the straight lines SL1 and SL2 in the second direction E2 is ΔR1. In other words, the straight line SL2 is located inside the straight line SL1 and is separated from the straight line SL1 in the second direction E2 by ΔR1. The distance ΔR1 is 3.0 μm.

[0115] The straight line portion of the 22nd side 592 is a portion of the 22nd side 592 located between a straight line SL3 extending in the second direction E2 and a straight line SL4 extending parallel to the straight line SL3. The straight line SL3 is located outside the 22nd side 592 and is tangent to the 22nd side 592. The straight line SL4 is located inside the straight line SL3. The distance between the straight lines SL3 and SL4 in the first direction E1 is ΔR1. In other words, the straight line SL4 is located inside the straight line SL3 and is separated from the straight line SL3 in the first direction E1 by ΔR1.

[0116] Although not shown, the straight line portion of the eleventh side 581 of the first end 58 is defined in the same manner as the straight line portion of the twenty-first side 591 of the second end 59. That is, the straight line portion of the eleventh side 581 is a portion of the eleventh side 581 located between two straight lines extending in the first direction E1. The distance between the two straight lines is ΔR1.

[0117] Although not shown, the straight line portion of twelfth side 582 of first end 58 is defined in the same manner as the straight line portion of twelfth side 592 of second end 59. That is, the straight line portion of twelfth side 582 is the portion of twelfth side 582 located between two straight lines extending in second direction E2. The distance between the two straight lines is ΔR1.

[0118] Next, the shape of the cross section of the mask 50 will be described. Fig. 13 is a diagram showing the observation direction of the cross section of the mask 50. Dimensions such as the second dimension and the third dimension described later are specified in the cross section of the mask 50 cut along the plane Lm. The plane Lm is inclined at an angle of 45 degrees with respect to the first direction E1 and is perpendicular to the first surface 551 and the second surface 552. The plane Lm passes through the connection portion where the twenty-first side 591 and the twenty-second side 592 are connected.

[0119] The cross-sectional shape of the mask 50 is observed around ten through holes 56. The ten through holes 56 are extracted from the through hole group 53 closest to the center point C1 of the mask 50 in the x-direction Dx. The ten through holes 56 include one through hole 56 closest to the center point C2 of the through hole group 53 in a plan view. This one through hole 56 is also referred to as a central through hole. The ten through holes 56, including the central through hole, are aligned along the direction of the plane Lm. The center points C1 and C2 are also shown in FIG. 7.

[0120] Each of the ten cross sections of the mask 50 is obtained by cutting the mask 50 along a plane Lm passing through the intersection point Cm. The intersection point Cm is a point where a straight line L1 tangent to the twenty-first side 591 and extending in the first direction E1 intersects with a straight line L2 tangent to the twenty-second side 592 and extending in the second direction E2.

[0121] When the second end 59 includes two twenty-first sides 591 and two twenty-second sides 592, four intersection points are generated. The intersection point Cm through which the face Lm passes is selected such that the distance between the intersection point Cm and the second end 59 is smallest.

[0122] FIG. 14A is a diagram showing an example of a cross section of the mask 50 cut along the plane Lm. The wall surface 57 of the mask 50 may include a first wall surface 571 and a second wall surface 572. The first wall surface 571 is a portion of the wall surface 57 located between the first imaginary point P11 and the first end 58 in the thickness direction Et. The first wall surface 571 may be located inside the first imaginary straight line L11. The first wall surface 571 may have a curved shape protruding inward. The second wall surface 572 is a portion of the wall surface 57 located between the first imaginary point P11 and the second end 59 in the thickness direction Et. The second wall surface 572 may be located outside the first imaginary straight line L11. The second wall surface 572 may have a curved shape protruding outward.

[0123] The first imaginary straight line L11 is an imaginary straight line that passes through the first end 58 and the second end 59 in the cross-sectional view of the mask 50. The first imaginary point P11 is an imaginary point where the first imaginary straight line L11 and the wall surface 57 intersect in the cross-sectional view of the mask 50.

[0124] The wall surface 57 may have a reference height H10. The reference height H10 is the distance in the thickness direction Et between the first end 58 and the second end 59 in a cross-sectional view of the mask 50. When the first end 58 is located on the first surface 551 and the second end 59 is located on the second surface 552, the reference height H10 is equal to the thickness T0 of the mask 50.

[0125] The wall surface 57 may have a second dimension S12. The second dimension S12 is the distance between a second imaginary point P12 and the first end 58 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The second imaginary point P12 is an imaginary point where a second imaginary line L12 and the first surface 551 intersect in the cross-sectional view of the mask 50. The second imaginary line L12 is an imaginary line that passes through the second end 59 and extends in the thickness direction Et in the cross-sectional view of the mask 50.

[0126] The design value of the second dimension S12 is determined according to the first inclination angle θ1. The first inclination angle θ1 is the inclination angle of the first virtual straight line L11 with respect to the thickness direction Et. In the deposition process using the mask 50, a part of the deposition material flying toward the substrate 110 moves in a direction inclined with respect to the thickness direction Et. The deposition material moving in a direction inclined with respect to the thickness direction Et is also called an inclined component. The larger the first inclination angle θ1, the more the region of the substrate 110 is prevented from being hidden in the shadow of the wall surface 57 in the moving direction of the inclined component. That is, the shadow of the mask 50 is suppressed.

[0127] On the other hand, a large first inclination angle θ1 means that the second dimension S12 of the wall surface 57 is large. When the dimension of the first end 58 is constant, the dimension of the rib 553 decreases as the second dimension S12 increases. For example, the area of ​​the rib 553 decreases. The strength of the mask 50 decreases as the area of ​​the rib 553 decreases. When the strength of the mask 50 decreases, defects such as breakage and deformation are likely to occur in the mask 50. For example, when tension is applied to the mask 50 in the x direction Dx, local deformation may occur in the connection part of the second end 59 where the 21st side 591 and the 22nd side 592 are connected. Therefore, it is preferable to determine an appropriate upper limit of the first inclination angle θ1. That is, it is preferable to determine an appropriate upper limit of S12 / H10, which is the ratio of the second dimension S12 to the reference height H10.

[0128] For example, S12 / H10 may be 0.50 or more, 0.60 or more, or 0.70 or more. For example, S12 / H10 may be 0.90 or less, 1.05 or less, or 1.15 or less. The range of S12 / H10 may be determined by a first group consisting of 0.50, 0.60, and 0.70, and / or a second group consisting of 0.90, 1.05, and 1.15. The range of S12 / H10 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S12 / H10 may be determined by a combination of any two of the values ​​included in the first group. The range of S12 / H10 may be determined by a combination of any two of the values ​​included in the second group. S12 / H10 may be, for example, 0.50 or more and 1.15 or less, 0.50 or more and 1.05 or less, 0.50 or more and 0.90 or less, 0.50 or more and 0.70 or less, 0.50 or more and 0.60 or less, 0.60 or more and 1.15 or less, 0.60 or more and 1.05 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.70 or less, 0.70 or more and 1.15 or less, 0.70 or more and 1.05 or less, 0.70 or more and 0.90 or less, 0.90 or more and 1.15 or less, 0.90 or more and 1.05 or less, or 1.15 or less.

[0129] 14A, the wall surface 57 may have a third dimension S13. The third dimension S13 is the distance between the first virtual line L11 and the third virtual line L13 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The third virtual line L13 is an imaginary line that extends parallel to the first virtual line L11 and is tangent to the first wall surface 571 in the cross-sectional view of the mask 50. The third virtual line L13 is located inside the first wall surface 571.

[0130] The third dimension S13 may be, for example, 0.50 μm or more, 1.00 μm or more, or 1.50 μm or more. The third dimension S13 may be, for example, 3.00 μm or less, 3.50 μm or less, or 4.00 μm or less. The range of the third dimension S13 may be determined by a first group consisting of 0.50 μm, 1.00 μm, and 1.50 μm, and / or a second group consisting of 3.00 μm, 3.50 μm, and 4.00 μm. The range of the third dimension S13 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the third dimension S13 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the third dimension S13 may be determined by a combination of any two of the values ​​included in the second group described above. The third dimension S13 may be, for example, 0.50 μm or more and 4.00 μm or less, 0.50 μm or more and 3.50 μm or less, 0.50 μm or more and 3.00 μm or less, 0.50 μm or more and 1.50 μm or less, 0.50 μm or more and 1.00 μm or less, 1.00 μm or more and 4.00 μm or less, 1.00 μm or more and 3.50 μm or less, or 1.00 It may be 1.00 μm or more and 1.50 μm or less, 1.50 μm or more and 4.00 μm or less, 1.50 μm or more and 3.50 μm or less, 1.50 μm or more and 3.00 μm or less, 3.00 μm or more and 4.00 μm or less, 3.00 μm or more and 3.50 μm or less, or 3.50 μm or more and 4.00 μm or less.

[0131] The ratio S13 / S12 of the third dimension S13 to the second dimension S12 may be, for example, 0.010 or more, 0.020 or more, 0.030 or more, or 0.050 or more. S13 / S12 may be, for example, 0.080 or less, 0.100 or less, 0.120 or less, or 0.140 or less. The range of S13 / S12 may be determined by a first group consisting of 0.010, 0.020, 0.030, and 0.050, and / or a second group consisting of 0.080, 0.100, 0.120, and 0.140. The range of S13 / S12 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of S13 / S12 may be determined by a combination of any two of the values ​​included in the first group described above. The range of S13 / S12 may be determined by a combination of any two of the values ​​included in the second group described above. For example, S13 / S12 may be 0.010 or more and 0.140 or less, 0.010 or more and 0.120 or less, 0.010 or more and 0.100 or less, 0.010 or more and 0.080 or less, 0.010 or more and 0.050 or less, 0.010 or more and 0.030 or less, 0.010 or more and 0.020 or less, 0.020 or more and 0.140 or less, 0.020 or more and 0.120 or less, 0.020 or more and 0.100 or less, 0.020 or more and 0.080 or less, 0.020 or more and 0.050 or less, 0.020 or more and 0.030 or less, or 0.030 or more and 0.140 or less, 0.030 or more and 0.120 or less, 0.030 or more and 0.100 or less, 0.030 or more and 0.080 or less, 0.030 or more and 0.050 or less, 0.050 or more and 0.140 or less, 0.050 or more and 0.120 or less, 0.050 or more and 0.100 or less, 0.050 or more and 0.080 or less, 0.080 or more and 0.140 or less, 0.080 or more and 0.120 or less, 0.080 or more and 0.100 or less, 0.100 or more and 0.140 or less, 0.100 or more and 0.120 or less, or 0.120 or more and 0.140 or less.

[0132] An example of the effect achieved by controlling S13 / S12 will be described. Fig. 15A is a cross-sectional view showing an example of a vapor deposition process. The organic material that has passed through the through-holes 56 of the mask 50 is attached to the substrate 110 to form an organic layer 130. The organic layer 130 includes, for example, a central portion 131 and an end portion 132. The end portion 132 is located outside the central portion 131 in a plan view.

[0133] The boundary between the central portion 131 and the end portion 132 in plan view is indicated by reference numeral 133 .

[0134] 15A, the reference symbol F11 represents a path that is in contact with the second end 59 and is inclined at the first inclination angle θ1 with respect to the thickness direction Et. The path F11 overlaps with the first virtual straight line L11. The reference symbol F13 represents a path that is in contact with the first wall surface 571 and is inclined at the first inclination angle θ1 with respect to the thickness direction Et. The path F13 overlaps with the third virtual straight line L13. The end portion 132 of the organic layer 130 is located outside the path F13.

[0135] The organic material moving in the direction of the first tilt angle θ1 in the space between the paths F11 and F13 is deposited on the mask 50 rather than on the substrate 110. Therefore, the thickness of the edge portion 132 is smaller than the thickness of the central portion 131.

[0136] The third dimension S13 of the wall surface 57 corresponds to the distance between the path F11 and the path F13. The smaller the third dimension S13, the smaller the width W1 of the end portion 132. In the mask 50 of the present embodiment, the third dimension S13 is reduced, and therefore the width W1 of the end portion 132 is also reduced. That is, the mask 50 of the present embodiment can suppress shadows.

[0137] As described above, the second dimension S12 of the wall surface 57 is a parameter that is set to suppress the shadow of the mask 50 at the expense of reducing the strength of the mask 50. However, even if the second dimension S12 is set sufficiently large, if the third dimension S13 is large, it is considered that the shadow of the mask 50 is not sufficiently suppressed.

[0138] On the other hand, if the third dimension S13 is too small, it is considered that the strength of the mask 50 at the first end 58 becomes too small. As the third dimension S13 becomes smaller, the angle between the first wall surface 571 and the first surface 551 at the first end 58 becomes smaller, and breakage such as cracks becomes more likely to occur in the first wall surface 571.

[0139] According to the mask 50 of this embodiment, by controlling S13 / S12, it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50.

[0140] As the third dimension S13 becomes smaller, the angle between the first wall surface 571 and the first surface 551 at the first end 58 becomes smaller, so that dimensional changes due to variations in the amount of etching become more likely to occur. For example, variations become more likely to occur in the dimensions R11 and R12. Setting a lower limit for S13 / S12 is also useful in suppressing variations in the dimensions R11 and R12.

[0141] The position of the path F13 in the in-plane direction of the first surface 551 may affect the position of the boundary 133 between the central portion 131 and the end portion 132. For example, as shown in Fig. 15A, the boundary 133 may be located on or near the path F13. The higher the accuracy of the position of the path F13, the higher the accuracy of the position of the boundary 133. In other words, the higher the accuracy of the position of the path F13, the higher the positional accuracy of the organic layer 130.

[0142] The position of the third virtual straight line L13 in the in-plane direction of the first surface 551 is influenced by the position of the third virtual point P13. The position of the third virtual point P13 in the thickness direction Et is influenced by a first etching step and a second etching step, which will be described later. For example, the position of the third virtual point P13 in the thickness direction Et varies due to variations in the etching depth in the first etching step and variations in the etching depth in the second etching step. In order to increase the positional accuracy of the organic layer 130 in the in-plane direction of the first surface 551, it is preferable that the position of the third virtual straight line L13 in the in-plane direction of the first surface 551 is less influenced by the position of the third virtual point P13 in the thickness direction Et.

[0143] 14A, the wall surface 57 may have a third height H13. The third height H13 is the distance in the thickness direction Et between the first end 58 and a third imaginary point P13 in a cross-sectional view of the mask 50. The third imaginary point P13 is an imaginary point where a third imaginary straight line L13 and the wall surface 57 meet in the cross-sectional view of the mask 50.

[0144] 14A, the third virtual point P13 may be located outside the first end 58. That is, the third virtual point P13 may be located farther from the center point of the through hole 56 than the first end 58 in the in-plane direction of the first surface 551. By positioning the third virtual point P13 outside the first end 58, a shadow is suppressed.

[0145] The ratio S13 / H13 of the third dimension S13 to the third height H13 may be, for example, 0.30 or more, 0.50 or more, 0.60 or more, or 0.70 or more. S13 / H13 may be, for example, 0.80 or less, 1.20 or less, 1.50 or less, or 2.50 or less. The range of S13 / H13 may be defined by a first group consisting of 0.30, 0.50, 0.60, and 0.70, and / or a second group consisting of 0.80, 1.20, 1.50, and 2.50. The range of S13 / H13 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of S13 / H13 may be defined by a combination of any two of the values ​​included in the first group described above. The range of S13 / H13 may be determined by a combination of any two of the values ​​included in the second group described above. For example, S13 / H13 may be 0.30 or more and 2.50 or less, 0.30 or more and 1.50 or less, 0.30 or more and 1.20 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or less, 0.50 or more and 2.50 or less, 0.50 or more and 1.50 or less, 0.50 or more and 1.20 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, 0.50 or more and 0.60 or less, 0.60 or more and 2.50 or less. or less, 0.60 or more and 1.50 or less, 0.60 or more and 1.20 or less, 0.60 or more and 0.80 or less, 0.60 or more and 0.70 or less, 0.70 or more and 2.50 or less, 0.70 or more and 1.50 or less, 0.70 or more and 1.20 or less, 0.70 or more and 0.80 or less, 0.80 or more and 2.50 or less, 0.80 or more and 1.50 or less, 0.80 or more and 1.20 or less, 1.20 or more and 2.50 or less, 1.20 or more and 1.50 or less, or 1.50 or more and 2.50 or less.

[0146] An example of the effect achieved by controlling S13 / H13 will be described. Fig. 16 is a cross-sectional view showing an example of a deposition process. In Fig. 16, the reference symbol F12 represents a path inclined at a second inclination angle θ2 with respect to the thickness direction Et. The second inclination angle θ2 is smaller than the first inclination angle θ1.

[0147] The higher the probability that the organic material moving along path F12 reaches substrate 110, the more the width W1 of end portion 132 is reduced. In mask 50 of the present embodiment, S13 / H13 is reduced, and therefore the arrival probability is increased.

[0148] 14A, the wall surface 57 may have a fourth dimension S14. The fourth dimension S14 is the distance between the first virtual line L11 and the fourth virtual line L14 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The fourth virtual line L14 is an imaginary line that extends parallel to the first virtual line L11 and is tangent to the second wall surface 572 in the cross-sectional view of the mask 50. The fourth virtual line L14 is located outside the second wall surface 572.

[0149] Even when the fourth dimension S14 is zero, the material moving at the first tilt angle θ1 is not prevented from adhering to the substrate 110 by the second wall surface 572. From the viewpoint of the strength of the mask 50, it is preferable that the fourth dimension S14 is small. As described later, the mask 50 of this embodiment can achieve both a reduced fourth dimension S14 and a reduced third dimension S13, compared to the mask of the second comparative embodiment.

[0150] The ratio S14 / S12 of the fourth dimension S14 to the second dimension S12 may be, for example, 0.020 or more, 0.050 or more, or 0.100 or more. S14 / S12 may be, for example, 0.150 or less, 0.200 or less, or 0.250 or less. The range of S14 / S12 may be determined by a first group consisting of 0.020, 0.050, and 0.100, and / or a second group consisting of 0.150, 0.200, and 0.250. The range of S14 / S12 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of S14 / S12 may be determined by a combination of any two of the values ​​included in the first group described above. The range of S14 / S12 may be determined by a combination of any two of the values ​​included in the second group described above. S14 / S12 may be, for example, 0.020 or more and 0.250 or less, 0.020 or more and 0.200 or less, 0.020 or more and 0.150 or less, 0.020 or more and 0.100 or less, 0.020 or more and 0.050 or less, 0.050 or more and 0.250 or less, 0.050 or more and 0.200 or less, 0.050 or more and 0.150 or less, 0.050 or more and 0.100 or less, 0.100 or more and 0.250 or less, 0.100 or more and 0.200 or less, 0.100 or more and 0.150 or less, 0.150 or more and 0.250 or less, 0.150 or more and 0.200 or less, or 0.200 or more and 0.250 or less.

[0151] The third dimension S13 may be smaller than the fourth dimension S14. The ratio of the third dimension S13 to the fourth dimension S14, S13 / S14, may be, for example, 0.10 or more, 0.20 or more, or 0.40 or more. S13 / S14 may be, for example, 0.60 or less, 0.80 or less, or 1.00 or less. The range of S13 / S14 may be determined by a first group consisting of 0.10, 0.20, and 0.40, and / or a second group consisting of 0.60, 0.80, and 1.00. The range of S13 / S14 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S13 / S14 may be determined by a combination of any two of the values ​​included in the first group. The range of S13 / S14 may be determined by a combination of any two of the values ​​included in the second group described above. For example, S13 / S14 may be 0.10 or more and 1.00 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.20 or less, 0.20 or more and 1.00 or less, 0.20 or more and 0.80 or less, 0.20 or more and 0.60 or less, 0.20 or more and 0.40 or less, 0.40 or more and 1.00 or less, 0.40 or more and 0.80 or less, 0.40 or more and 0.60 or less, 0.60 or more and 1.00 or less, 0.60 or more and 0.80 or less, or 0.80 or more and 1.00 or less.

[0152] 14B is a diagram showing an example of a first wall surface 571 of the mask 50 cut along the plane Lm. The first wall surface 571 may include an eleventh wall surface 5711 and a twelfth wall surface 5712. The eleventh wall surface 5711 is a portion of the first wall surface 571 located between the third imaginary point P13 and the first end 58 in the thickness direction Et. The twelfth wall surface 5712 is a portion of the first wall surface 571 located between the third imaginary point P13 and the first imaginary point P11 in the thickness direction Et.

[0153] The eleventh wall surface 5711 may be at least partially located inside the seventh imaginary line L17. The entirety of the eleventh wall surface 5711 may be located inside the seventh imaginary line L17. The eleventh wall surface 5711 may have a curved shape that protrudes inward from the seventh imaginary line L17. The seventh imaginary line L17 is an imaginary line that passes through the first end 58 and the third imaginary point P13 in a cross-sectional view of the mask 50.

[0154] As shown in FIG. 14B, the first wall surface 571 may have an eighth dimension S18. The eighth dimension S18 is a distance between the seventh virtual line L17 and the eighth virtual point P18 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The eighth virtual point P18 is a virtual point where the eighth virtual line L18 and the eleventh wall surface 5711 meet in the cross-sectional view of the mask 50. The eighth virtual line L18 is a virtual line that extends parallel to the seventh virtual line L17 and meets the eleventh wall surface 5711 in the cross-sectional view of the mask 50. In an embodiment of the present disclosure, the eighth virtual line L18 and the eighth virtual point P18 are located inside the seventh virtual line L17. In an embodiment of the present disclosure, the eighth virtual line L18 is located inside the eleventh wall surface 5711.

[0155] The organic material moving along the path F13 shown in FIG. 15A does not reach the eleventh wall surface 5711. The eleventh wall surface 5711 being located inside the seventh virtual straight line L17 can increase the thickness of the mask 50 around the first end 58 compared to the case where the eleventh wall surface 5711 is located outside the seventh virtual straight line L17. Therefore, in order to increase the strength of the mask 50, it is preferable that the eighth dimension S18 is large. However, if the eighth dimension S18 becomes excessively large compared to the state of FIG. 14B, it is considered that the above-mentioned third virtual straight line L13 contacts the wall surface 57 near the eighth virtual point P18 of FIG. 14B. Therefore, the eighth dimension S18 has an upper limit.

[0156] The eighth dimension S18 may be, for example, 0.10 μm or more, 0.20 μm or more, or 0.40 μm or more. The eighth dimension S18 may be, for example, 0.80 μm or less, 1.10 μm or less, or 1.50 μm or less. The range of the eighth dimension S18 may be determined by a first group consisting of 0.10 μm, 0.20 μm, and 0.40 μm, and / or a second group consisting of 0.80 μm, 1.10 μm, and 1.50 μm. The range of the eighth dimension S18 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the eighth dimension S18 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the eighth dimension S18 may be determined by a combination of any two of the values ​​included in the second group described above. The eighth dimension S18 may be, for example, 0.10 μm or more and 1.50 μm or less, 0.10 μm or more and 1.10 μm or less, 0.10 μm or more and 0.80 μm or less, 0.10 μm or more and 0.40 μm or less, 0.10 μm or more and 0.20 μm or less, 0.20 μm or more and 1.50 μm or less, 0.20 μm or more and 1.10 μm or less, or 0.20 The thickness may be 0.80 μm or more, 0.20 μm or more and 0.40 μm or less, 0.40 μm or more and 1.50 μm or less, 0.40 μm or more and 1.10 μm or less, 0.40 μm or more and 0.80 μm or less, 0.80 μm or more and 1.50 μm or less, 0.80 μm or more and 1.10 μm or less, or 1.10 μm or more and 1.50 μm or less.

[0157] The ratio S18 / S12 of the eighth dimension S18 to the second dimension S12 may be, for example, 0.002 or more, 0.004 or more, 0.006 or more, or 0.010 or more. S18 / S12 may be, for example, 0.015 or less, 0.020 or less, 0.030 or less, or 0.050 or less. The range of S18 / S12 may be defined by a first group consisting of 0.002, 0.004, 0.006, and 0.010, and / or a second group consisting of 0.015, 0.020, 0.030, and 0.050. The range of S18 / S12 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of S18 / S12 may be defined by a combination of any two of the values ​​included in the first group described above. The range of S18 / S12 may be determined by a combination of any two of the values ​​included in the second group described above. For example, S18 / S12 may be 0.002 or more and 0.050 or less, 0.002 or more and 0.030 or less, 0.002 or more and 0.020 or less, 0.002 or more and 0.015 or less, 0.002 or more and 0.010 or less, 0.002 or more and 0.006 or less, 0.002 or more and 0.004 or less, 0.004 or more and 0.050 or less, 0.004 or more and 0.030 or less, 0.004 or more and 0.020 or less, 0.004 or more and 0.015 or less, 0.004 or more and 0.010 or less, 0.004 or more and 0.006 or less, 0.006 or more and 0.050 or less. or less, 0.006 or more and 0.030 or less, 0.006 or more and 0.020 or less, 0.006 or more and 0.015 or less, 0.006 or more and 0.010 or less, 0.010 or more and 0.050 or less, 0.010 or more and 0.030 or less, 0.010 or more and 0.020 or less, 0.010 or more and 0.015 or less, 0.015 or more and 0.050 or less, 0.015 or more and 0.030 or less, 0.015 or more and 0.020 or less, 0.020 or more and 0.050 or less, 0.020 or more and 0.030 or less, or 0.030 or more and 0.050 or less.

[0158] The twelfth wall surface 5712 may be at least partially located outside the seventh imaginary line L17. The entirety of the twelfth wall surface 5712 may be located outside the seventh imaginary line L17.

[0159] 14C is a diagram showing an example of a first wall surface 571 of the mask 50 cut along the plane Lm. The first wall surface 571 may include a 3A1 imaginary point P13A1 and a 3A2 imaginary point P13A2.

[0160] The 3A1 imaginary point P13A1 is an imaginary point where the 3A imaginary line L13A and the 11th wall surface 5711 intersect in the cross-sectional view of the mask 50. The 3A2 imaginary point P13A2 is an imaginary point where the 3A imaginary line L13A and the 12th wall surface 5712 intersect in the cross-sectional view of the mask 50. The 3A imaginary line L13A is an imaginary line that is located inside the 3rd imaginary line L13 in the cross-sectional view of the mask 50 and extends parallel to the 3rd imaginary line L13. The distance between the 3rd imaginary line L13 and the 3A imaginary line L13A in the in-plane direction of the first surface 551 is represented by the symbol ΔSA. That is, the 3A imaginary line L13A is an imaginary line obtained by shifting the 3rd imaginary line L13 inward by the distance ΔSA.

[0161] The symbol TA1 represents the distance in the thickness direction Et between the third imaginary point P13 and the third A1 imaginary point P13A1. The position of the third imaginary line L13 in the in-plane direction of the first surface 551 varies depending on the position of the third imaginary point P13. The position of the third imaginary point P13 in the thickness direction Et varies due to the variation in the etching depth in the first etching step and the variation in the etching depth in the second etching step. The greater the distance TA1, the less the influence of the variation in the position of the third imaginary line L13 in the thickness direction Et on the position of the third imaginary line L13 in the in-plane direction of the first surface 551. That is, the greater the distance TA1, the less sensitive the position of the third imaginary line L13 is to the variation in the position of the third imaginary point P13 in the thickness direction Et. The distance TA1 can be an index for suppressing the variation in the position of the third imaginary line L13 in the in-plane direction of the first surface 551. Therefore, the distance TA1 can be an index for suppressing variation in the position of the organic layer 130 in the in-plane direction of the first surface 551. The greater the distance TA1, the more the variation in the position of the organic layer 130 in the in-plane direction of the first surface 551 can be suppressed.

[0162] The symbol TA2 represents the distance in the thickness direction Et between the third imaginary point P13 and the third A2 imaginary point P13A2. The distance TA2 can also be an index for suppressing the variation in the position of the third imaginary line L13 in the in-plane direction of the first surface 551. Therefore, the distance TA2 can also be an index for suppressing the variation in the position of the organic layer 130 in the in-plane direction of the first surface 551. The greater the distance TA2, the more the variation in the position of the organic layer 130 in the in-plane direction of the first surface 551 can be suppressed.

[0163] In this embodiment, the direction in which the first wall surface 571 spreads in the vicinity of the third imaginary point P13 changes gradually and continuously. For example, in a cross-sectional view of the mask, the direction in which a tangent line touching the first wall surface 571 extends and the direction in which a tangent line touching the twelfth wall surface 5712 extends change continuously across the third imaginary point P13. Therefore, large distances TA1 and TA2 are obtained.

[0164] The distance ΔSA is determined according to the positional accuracy required for the organic layer 130. The distance ΔSA may be 0.10 μm, 0.20 μm, 0.30 μm, 0.50 μm, 0.70 μm, or 1.00 μm. The distance ΔSA is also referred to as a first tolerance.

[0165] The distance TA1 is preferably sufficiently large with respect to the distance ΔSA. The larger the distance TA1, the more the influence of the variation in the etching depth on the positional accuracy of the organic layer 130 is suppressed. TA1 / ΔSA, which is the ratio of the distance TA1 to the distance ΔSA, may be, for example, 2.5 or more, 3.0 or more, or 3.5 or more. TA1 / ΔSA may be, for example, 4.0 or less, 5.0 or less, or 6.0 or less. The range of TA1 / ΔSA may be determined by a first group consisting of 2.5, 3.0, and 3.5, and / or a second group consisting of 4.0, 5.0, and 6.0. The range of TA1 / ΔSA may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of TA1 / ΔSA may be determined by a combination of any two of the values ​​included in the first group described above. The range of TA1 / ΔSA may be determined by a combination of any two of the values ​​included in the second group described above. TA1 / ΔSA may be, for example, 2.5 or more and 6.0 or less, 2.5 or more and 5.0 or less, 2.5 or more and 4.0 or less, 2.5 or more and 3.5 or less, 2.5 or more and 3.0 or less, 3.0 or more and 6.0 or less, 3.0 or more and 5.0 or less, 3.0 or more and 4.0 or less, 3.0 or more and 3.5 or less, 3.5 or more and 6.0 or less, 3.5 or more and 5.0 or less, 3.5 or more and 4.0 or less, 4.0 or more and 6.0 or less, 4.0 or more and 5.0 or less, or 5.0 or more and 6.0 or less.

[0166] As in the case of the distance TA1, the distance TA2 is preferably sufficiently large with respect to the distance ΔSA. TA2 / ΔSA, which is the ratio of the distance TA2 to the distance ΔSA, may be, for example, 1.0 or more, 1.5 or more, or 2.0 or more. TA2 / ΔSA may be, for example, 4.0 or less, 5.0 or less, or 6.0 or less. The range of TA2 / ΔSA may be determined by a first group consisting of 1.0, 1.5, and 2.0, and / or a second group consisting of 4.0, 5.0, and 6.0. The range of TA2 / ΔSA may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of TA2 / ΔSA may be determined by a combination of any two of the values ​​included in the first group described above. The range of TA2 / ΔSA may be determined by a combination of any two of the values ​​included in the second group described above. TA2 / ΔSA may be, for example, 1.0 or more and 6.0 or less, 1.0 or more and 5.0 or less, 1.0 or more and 4.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.5 or more and 6.0 or less, 1.5 or more and 5.0 or less, 1.5 or more and 4.0 or less, 1.5 or more and 2.0 or less, 2.0 or more and 6.0 or less, 2.0 or more and 5.0 or less, 2.0 or more and 4.0 or less, 4.0 or more and 6.0 or less, 4.0 or more and 5.0 or less, or 5.0 or more and 6.0 or less.

[0167] 15B is a plan view showing an example of organic layer 130 formed by a vapor deposition process. The positions of elements of organic layer 130, such as boundary 133, vary depending on the position of third virtual straight line L13 in the in-plane direction of first surface 551. In this embodiment, by increasing distance TA1 and distance TA2, the effect of variations in etching depth on the positional accuracy of third virtual straight line L13 is suppressed.

[0168] In one through-hole 56 of the mask 50, when the position of the third virtual point P13 in the thickness direction Et varies, the position of the organic layer 130 in plan view also varies. For example, when the position of the third virtual point P13 in the thickness direction Et varies, the position of the boundary 133 or the position of the outer edge 134 of the organic layer 130 in plan view varies. For example, it is considered that the linearity of a portion that should be a straight line in the contour of the boundary 133 in plan view decreases due to the variation in the position of the third virtual point P13 in the thickness direction Et.

[0169] In the present embodiment, by increasing the distances TA1 and TA2, the influence of the fluctuation in the position of the third virtual point P13 in the thickness direction Et on the position of the third virtual straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, even if the position of the third virtual point P13 in the thickness direction Et varies in one through-hole 56 of the mask 50, the linearity of the contour of the boundary 133 in a planar view can be obtained. Therefore, in the present embodiment, the positional accuracy of the organic layer 130 can be improved.

[0170] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 are calculated based on a cross-sectional image of a sample of the mask 50. The sample of the mask 50 is made by cutting the mask 50 along the plane Lm. The cross-sectional image of the sample is obtained by observing the cross-section of the sample using a digital microscope. The dimensions of the wall surface 57 are calculated by averaging the measurements obtained around the periphery of the ten through-holes 56 mentioned above.

[0171] Next, a method for manufacturing the mask 50 will be described. Fig. 17 is a diagram showing a manufacturing apparatus 70 for manufacturing the mask 50. The manufacturing apparatus 70 includes a resist forming apparatus 71, an exposure apparatus 72, a developing apparatus 73, a first etching apparatus 76, a filling apparatus 77, a second etching apparatus 78, and a separating apparatus 79.

[0172] First, a metal plate wound in a roll is prepared. Then, the metal plate is unwound from the roll. The metal plate unwound from the roll is represented by the symbol 55A. The metal plate 55A is transported to the resist forming device 71, the exposure device 72, the development device 73, the first etching device 76, the filling device 77, the second etching device 78, and the separation device 79 in order. In all the devices from the resist forming device 71 to the separation device 79, the metal plate 55A may be transported continuously along its length direction. Although not shown, the manufacturing method of the mask 50 may include a step of winding the metal plate 55A in a roll and a step of unwinding the metal plate 55A from the roll when transporting the metal plate 55A from one device to the next device.

[0173] 18, the resist forming device 71 performs a resist forming step of forming a first resist layer 60 on a first surface 551 of the metal plate 55A and a second resist layer 65 on a second surface 552. The resist layers 60 and 65 may be layers formed by applying a solution containing a resist material to the surface of the metal plate 55A and solidifying it. Alternatively, the resist layers 60 and 65 may be layers formed by attaching a film such as a dry film to the surface of the metal plate 55A.

[0174] The coating type resist layer is formed by coating the surface of the metal plate 55A with a solution containing a photosensitive material and solidifying it. At this time, a baking step may be performed to bake the resist layers 60, 65. The photosensitive material may be a photo-dissolving type, a so-called positive type, or a photo-curing type, a so-called negative type.

[0175] The positive photosensitive material is, for example, a novolac-based positive resist such as SC500. The negative photosensitive material is, for example, a casein resist. The negative resist layer may contain an acrylic resin.

[0176] The exposure device 72 performs an exposure process of exposing the first resist layer 60 and exposing the second resist layer 65. As shown in Fig. 19, the first resist layer 60 is irradiated with a first exposure light LE1 through a first exposure mask 64. The second resist layer 65 is irradiated with a second exposure light LE2 through a second exposure mask 69. The exposure process may include a process of adjusting the relative position of the second exposure mask 69 with respect to the first exposure mask 64.

[0177] The developing device 73 performs a developing step of developing the first resist layer 60 and developing the second resist layer 65. As a result, as shown in Fig. 20, a first opening 62 is formed in the first resist layer 60 and a second opening 67 is formed in the second resist layer 65. The first resist layer 60 in which the first opening 62 is formed is also referred to as a first resist pattern 61. The second resist layer 65 in which the second opening 67 is formed is also referred to as a second resist pattern 66.

[0178] The process of forming the first resist pattern 61 on the first surface 551 and the second resist pattern 66 on the second surface 552 is also referred to as a resist pattern forming process. The resist pattern forming process includes the above-mentioned resist forming process, exposure process, and development process. The exposure process and development process are also referred to as a patterning process.

[0179] 21 is a plan view showing an example of the first resist pattern 61. The outline of each of the multiple first openings 62 may include two 31st sides 621 facing each other in the second direction E2. The outline of each of the multiple first openings 62 may include two 32nd sides 622 facing each other in the first direction E1. The outline of the first opening 62 may be composed of the two 31st sides 621 and the two 32nd sides 622.

[0180] Each of the two third-first sides 621 may include a straight portion that extends linearly. The straight portion of the third-first side 621 may extend in the first direction E1.

[0181] Each of the two thirty-second sides 622 may include a straight portion that extends linearly. The straight portion of the thirty-second side 622 may extend in the second direction E2.

[0182] The 31st side 621 and the 32nd side 622 may be connected to each other. The portion of the contour of the first opening 62 where the 31st side 621 and the 32nd side 622 are connected to each other may be bent or curved.

[0183] Fig. 22 is a plan view showing an example of the second resist pattern 66. In Fig. 22, the outlines of the first openings 62 of the first resist pattern 61 are shown by dotted lines. The outlines of the multiple second openings 67 may each surround the outline of the first opening 62 in plan view.

[0184] The contour of each of the multiple second openings 67 may include two 41 sides 671 facing each other in the second direction E2. The contour of each of the multiple second openings 67 may include two 42 sides 672 facing each other in the first direction E1. The contour of the second opening 67 may be composed of the two 41 sides 671 and the two 42 sides 672.

[0185] Each of the two forty-first sides 671 may include a straight portion that extends linearly. The straight portion of the forty-first side 671 may extend in the first direction E1.

[0186] Each of the two forty-second sides 672 may include a straight portion that extends linearly. The straight portion of the forty-second side 672 may extend in the second direction E2.

[0187] The 41st side 671 and the 42nd side 672 may be connected to each other. The portion of the contour of the second opening 67 where the 41st side 671 and the 42nd side 672 are connected to each other may be bent or curved.

[0188] The first etching device 76 performs a first etching step of etching the first surface 551 using a first etching solution. The first etching solution enters the first opening 62, thereby forming a first recess 56a in the first surface 551 as shown in FIG. 23. The first recess 56a does not penetrate the metal plate 55. The first etching solution may include an acidic solution capable of dissolving an iron alloy. For example, the first etching solution may include a ferric chloride solution.

[0189] FIG. 23 and FIGS. 24 to 28 described later show a cross section of the metal plate 55A cut along the plane Lm.

[0190] The first etching step may be performed by spraying the first etching liquid toward the first surface 551. The first etching step may be performed in a state in which the first surface 551 is positioned below the second surface 552. In this case, the first etching liquid that has come into contact with the metal plate 55 can fall from the metal plate 55 by gravity. This makes it possible to prevent the first etching liquid in which the material of the metal plate 55 has been dissolved from being in continuous contact with the first surface 551.

[0191] The filling device 77 performs a filling step of filling the first recess 56a with the resin 63, as shown in FIG. 24. By filling the first recess 56a with the resin 63, it is possible to prevent the second etching liquid from penetrating into the first recess 56a during the second etching step. As shown in FIG. 24, the filling step may form a resin layer 63L that covers the first resist pattern 61. The resin 63 constituting the resin layer 63L is filled into the first recess 56a. Although not shown, the filling step may be performed in a state in which the first surface 551 is positioned above the second surface 552.

[0192] 24, a recess 631 may be formed on the surface of the resin layer 63L. The recess 631 is formed by the resin 63 constituting the resin layer 63L flowing toward the first recess 56a. The recess 631 may be formed at a position overlapping the first recess 56a in the thickness direction.

[0193] The material of the resin 63 may be configured to be slightly soluble in the second etching solution. The second etching solution includes, for example, an acidic solution capable of dissolving the iron alloy. For example, the second etching solution includes a ferric chloride solution. The material of the resin 63 may be configured to be slightly soluble in the acidic solution.

[0194] For example, the resin 63 may include an acrylic resin containing acrylic acid. The acrylic resin may include acrylic acid and an acrylic acid ester. The lower the content of acrylic acid in the acrylic resin, the lower the resistance of the acrylic resin to an acidic solution. By adjusting the content of acrylic acid in the acrylic resin of the resin 63, the resin 63 can be slightly dissolved in the second etching solution in the second etching step.

[0195] The second etching device 78 performs a second etching step of etching the second surface 552 using a second etching liquid. The second etching liquid enters the second openings 67, thereby forming second recesses 56b in the second surface 552, as shown in Fig. 25 and Fig. 26. Each of the multiple second recesses 56b is connected to a corresponding one of the first recesses 56a.

[0196] In the second etching step, the second etching liquid may be sprayed toward the second surface 552. Although not shown, the second etching step may be performed in a state in which the second surface 552 is positioned below the first surface 551. In this case, the second etching liquid that has come into contact with the metal plate 55 can fall from the metal plate 55 by gravity. This makes it possible to prevent the second etching liquid in which the material of the metal plate 55 has been dissolved from being in continuous contact with the metal plate 55.

[0197] 25 shows a state where the second etching step has progressed until the second recess 56b reaches the resin 63. When the second recess 56b reaches the resin 63, the second etching liquid comes into contact with the surface of the resin 63. When the surface of the resin 63 is dissolved by the second etching liquid, a gap is generated between the metal plate 55A and the resin 63 as shown in FIG. 26. The gap is also referred to as a groove 56g. The groove 56g may have an outline that surrounds a part of the resin 63 in a plan view.

[0198] 27, the etching of the metal plate 55A may proceed along the surface of the resin 63 so that the groove 56g expands in the thickness direction Et. The second etching step may be performed until the groove 56g reaches the first surface 551. In this case, the wall surface 57 is formed by the second etching step. Although not shown, the wall surface 57 may partially include the surface of the first recess 56a formed by the first etching step.

[0199] 27, the third imaginary point P13 on the wall surface 57 does not need to be in contact with the resin 63. Since the groove 56g is formed in the second etching step, the third imaginary point P13 can be generated at a position away from the resin 63.

[0200] Reference symbol K13 is the distance between the wall surface 57 and the resin 63 in the in-plane direction of the first surface 551 at the position of the third imaginary point P13 in the thickness direction Et. The distance K13 is determined in a cross section of the mask 50 cut along the plane Lm, similar to the third imaginary point P13. The distance K13 means the width of the groove 56g at the position of the third imaginary point P13. The width of the groove 56g may decrease from the third imaginary point P13 toward the first end 58.

[0201] The distance K13 may be, for example, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or more. The distance K13 may be, for example, 2.0 μm or less, 3.0 μm or less, or 4.0 μm or less. The range of the distance K13 may be determined by a first group consisting of 0.5 μm, 1.0 μm, and 1.5 μm, and / or a second group consisting of 2.0 μm, 3.0 μm, and 4.0 μm. The range of the distance K13 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the distance K13 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the distance K13 may be determined by a combination of any two of the values ​​included in the second group described above. The distance K13 may be, for example, 0.5 μm or more and 4.0 μm or less, 0.5 μm or more and 3.0 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.5 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 4.0 μm or less, 1.0 μm or more and 3.0 μm or less, 1.0 μm or more and 2.0 μm or less, 1.0 μm or more and 1.5 μm or less, 1.5 μm or more and 4.0 μm or less, 1.5 μm or more and 3.0 μm or less, 1.5 μm or more and 2.0 μm or less, 2.0 μm or more and 4.0 μm or less, 2.0 μm or more and 3.0 μm or less, or 3.0 μm or more and 4.0 μm or less.

[0202] The distance K13 may be determined relative to the height H63 of the resin 63. The height H63 is the maximum value of the distance in the thickness direction Et between the surface of the resin 63 and the first surface 551. K13 / H63, which is the ratio of the distance K13 to the height H63, may be, for example, 0.05 or more, 0.10 or more, or 0.15 or more. K13 / H63 may be, for example, 0.20 or less, 0.30 or less, or 0.40 or less. The range of K13 / H63 may be determined by a first group consisting of 0.05, 0.10, and 0.15, and / or a second group consisting of 0.20, 0.30, and 0.40. The range of K13 / H63 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of K13 / H63 may be determined by any two combinations of values ​​included in the first group described above. The range of K13 / H63 may be determined by any two combinations of values ​​included in the second group described above. K13 / H63 may be, for example, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.15 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.10 or more and 0.15 or more and 0.40 or less, 0.15 or more and 0.30 or less, 0.15 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0203] After the second etching step, a removing step may be performed. The removing step may include a resin removing step of removing the resin 63. The resin 63 is removed, for example, by using an alkaline stripping solution. The removing step may include a resist removing step of removing the first resist layer 60 and the second resist layer 65. The first resist layer 60 and the second resist layer 65 may be removed simultaneously with the resin 63 by using an alkaline stripping solution. After removing the resin 63, the first resist layer 60 and the second resist layer 65 may be removed by using a stripping solution different from the stripping solution for stripping the resin 63. FIG. 28 is a cross-sectional view showing the metal plate 55A in a state in which the resin 63, the first resist layer 60, and the second resist layer 65 have been removed.

[0204] The separating device 79 performs a separating step of separating the mask 50 from the metal plate 55A. The mask 50 is obtained by cutting out the area of ​​the metal plate 55A in which the through-hole group 53 is formed.

[0205] In the present embodiment, since the resin 63 dissolves in the second etching solution in the second etching step, a groove 56g is formed between the metal plate 55A and the resin 63. Therefore, the wall surface 57 of the mask 50 in the present embodiment can have a reduced third dimension S13 compared to the case where the close contact between the metal plate 55A and the resin 63 is maintained. Therefore, shadows in the deposition step can be suppressed.

[0206] FIG. 29 is a diagram showing the second etching step in a cross section of metal plate 55A cut along a plane perpendicular to the straight portion of twenty-first side 591 of second end 59. In the second etching step, fresh second etching solution is continuously sprayed onto second surface 552. Second surface 552 is etched to form second end 59. The state shown in FIG. 29 is the state immediately after second recess 56b is connected to first recess 56a. The second etching step is further performed from the state shown in FIG. 29.

[0207] The second etching liquid flows more easily in the vicinity of the straight portion of the 21st side 591 of the second end 59 than in the vicinity of the connection portion where the 21st side 591 and the 22nd side 592 are connected. Therefore, the ratio of fresh second etching liquid in the vicinity of the straight portion of the second end 59 is higher than the ratio of fresh second etching liquid in the vicinity of the connection portion of the second end 59. The higher the ratio of fresh second etching liquid, the higher the etching rate. Therefore, immediately after the second recess 56b is connected to the first recess 56a, the inclination angle θ6 of the second recess 56b in the straight portion of the second end 59 is larger than the inclination angle θ6 of the second recess 56b in the connection portion of the second end 59. The inclination angle θ6 is the angle between the virtual straight line L16 tangent to the surface of the second recess 56b at the second end 59 and the second surface 552.

[0208] 30 is a diagram showing an example of a cross section of the mask 50 cut along a plane perpendicular to the straight portion of the second end 59. In FIG. 30, the dotted line indicates the wall surface 57 in the cross section of the mask 50 cut along the plane Lm shown in FIG. 14A for reference. As shown in FIG. 30, the wall surface 57 located in the straight portion of the second end 59 is located outside the wall surface 57 located in the connection portion of the second end 59. Therefore, in the wall surface 57 located in the straight portion of the second end 59, shadows in the deposition process are suppressed in the same way as in the case of the wall surface 57 located in the connection portion of the second end 59.

[0209] In the deposition process, it is more difficult for the deposition material to reach the substrate 110 near the connection portion of the second end 59 than near the straight portion of the second end 59. In the present embodiment, as described above, the shadow near the connection portion of the second end 59 is suppressed, and therefore, naturally, the shadow near other parts of the second end 59 is also suppressed. Therefore, the width W1 of the end portion 132 is reduced over the entire outer edge of the organic layer 130.

[0210] When the width W1 is reduced, the area of ​​the organic layer 130 that can emit light is increased, i.e., the light-emitting area of ​​the organic layer 130 is increased. Therefore, the same light-emitting intensity as that of the conventional display device can be achieved with reduced power compared to the conventional display device.

[0211] 31 is a cross-sectional view showing the second etching step in the first comparative embodiment. In the first comparative embodiment, the resin 63 has high resistance to the second etching solution. Therefore, in the second etching step, the adhesion between the metal plate 55A and the resin 63 is maintained.

[0212] 32A is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the first comparative embodiment. Since the close contact between the metal plate 55A and the resin 63 is maintained in the second etching process, a part of the first wall surface 571 has a shape corresponding to the surface of the resin 63. As a result, as shown in FIG. 32A, the third imaginary point P13 protrudes largely inward from the first imaginary straight line L11, and the third dimension S13 becomes large. The third imaginary point P13 is located on the inner side of the first end 58.

[0213] On the other hand, in the present embodiment described above, the resin 63 dissolves in the second etching solution in the second etching step, so that a groove 56g is formed between the metal plate 55A and the resin 63. Therefore, the wall surface 57 of the mask 50 in the present embodiment can have a reduced third dimension S13 compared to the first comparative embodiment. Therefore, shadows in the deposition step can be suppressed.

[0214] 32B is a cross-sectional view showing first wall surface 571 in the first comparative embodiment. In the first comparative embodiment, first wall surface 571 is also partitioned into eleventh wall surface 5711 and twelfth wall surface 5712 with third imaginary point P13 as the boundary. A third A1 imaginary point P13A1 and a third A2 imaginary point P13A2 are determined on the eleventh wall surface 5711 and the twelfth wall surface 5712 based on a third A imaginary straight line L13A.

[0215] In the first comparative embodiment, the portion of the third imaginary point P13 protrudes significantly inward from the first imaginary line L11. Therefore, as shown in FIG. 32B, the distances TA1 and TA2 are small. As the distances TA1 and TA2 are smaller, the influence of the fluctuation in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary line L13 in the in-plane direction of the first surface 551 increases. Therefore, in the first comparative embodiment, it is considered that the linearity of the outline of the boundary of the organic layer or the linearity of the outline of the outer edge of the organic layer in a plan view is low.

[0216] On the other hand, in the present embodiment described above, the distances TA1 and TA2 are large. Therefore, the influence of the fluctuation in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, even if the position of the third imaginary point P13 in the thickness direction Et varies in one through-hole 56 of the mask 50, the linearity of the contour of the boundary 133 in a planar view is ensured.

[0217] FIG. 33 is a cross-sectional view showing the second etching step in the second comparative embodiment. In the second comparative embodiment, the resin 63 has high resistance to the second etching solution, as in the first comparative embodiment. Therefore, in the second etching step, the adhesion between the metal plate 55A and the resin 63 is maintained. Moreover, in the second comparative embodiment, the time of the second etching step is longer than in the first comparative embodiment. Therefore, the dimension of the second recess 56b formed by the second etching step is larger than in the first comparative embodiment.

[0218] 34A is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the second comparative embodiment. Since the dimension of the second recess 56b is large, the position of the third imaginary point P13 approaches the first end 58. As a result, the third dimension S13 and the third height H13 are reduced compared to the first comparative embodiment. Meanwhile, since the dimension of the second recess 56b is large, the position of the second end 59 shifts outward. As a result, the second dimension S12 and the fourth dimension S14 increase compared to the first comparative embodiment, and the strength of the mask 50 decreases.

[0219] On the other hand, in the present embodiment described above, in the second etching step, the amount of etching of the metal plate 55A around the resin 63 increases, but the amount of etching of the metal plate 55A at the position of the second end 59 is maintained. Therefore, the third dimension S13 can be reduced while maintaining the strength of the mask 50. Furthermore, according to the present embodiment, the ratio S13 / H13 of the third dimension S13 to the third height H13 can be reduced compared to the second comparative embodiment.

[0220] 34B is a cross-sectional view showing first wall surface 571 in the second comparative embodiment. In the second comparative embodiment, first wall surface 571 is also partitioned into eleventh wall surface 5711 and twelfth wall surface 5712 with third imaginary point P13 as the boundary. A third A1 imaginary point P13A1 and a third A2 imaginary point P13A2 are determined on the eleventh wall surface 5711 and the twelfth wall surface 5712 based on a third A imaginary straight line L13A.

[0221] In the second comparative embodiment, as in the first comparative embodiment, the portion of the third imaginary point P13 protrudes significantly inward from the first imaginary line L11. Therefore, as shown in FIG. 34B, the distance TA1 and the distance TA2 are small. Therefore, in the second comparative embodiment, the linearity of the outline of the boundary of the organic layer or the linearity of the outline of the outer edge of the organic layer in plan view is considered to be low.

[0222] On the other hand, in the present embodiment described above, the distances TA1 and TA2 are large. Therefore, the influence of the fluctuation in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, even if the position of the third imaginary point P13 in the thickness direction Et varies in one through-hole 56 of the mask 50, the linearity of the outline of the boundary 133 or the linearity of the outline of the outer edge of the organic layer 130 in a plan view is ensured.

[0223] Fig. 47A is a diagram showing a cross section of a mask cut along the above-mentioned plane Lm in the third comparative embodiment. Fig. 47B is a cross section showing a first wall surface 571 in the third comparative embodiment. In the third comparative embodiment, the first wall surface 571 is also partitioned into an eleventh wall surface 5711 and a twelfth wall surface 5712 with the third imaginary point P13 as a boundary. A third A1 imaginary point P13A1 and a third A2 imaginary point P13A2 are determined on the eleventh wall surface 5711 and the twelfth wall surface 5712 based on a third A imaginary straight line L13A.

[0224] In the third comparative form, the eleventh wall surface 5711 includes a portion that displaces inward from the third imaginary point P13 toward the first end 58. The third imaginary point P13 is located outside the first end 58. Therefore, in the third comparative form, the amount of protrusion of the portion of the third imaginary point P13 with respect to the first imaginary line L11 is smaller than in the first comparative form and the second comparative form.

[0225] 47B, in the third comparative embodiment, an eighth imaginary point P18 is also defined on the eleventh wall surface 5711. Unlike the present embodiment, in the third comparative embodiment, the eighth imaginary line L18 and the eighth imaginary point P18 are located outside the seventh imaginary line L17. Therefore, in the third comparative embodiment, the thickness of the mask around the first end 58 is smaller than that in the present embodiment.

[0226] In the present embodiment, the eighth imaginary line L18 and the eighth imaginary point P18 are located inside the seventh imaginary line L17. Since the thickness of the mask 50 around the first end 58 increases, the strength of the mask 50 is improved.

[0227] FIG. 47C is a cross-sectional view showing the first wall surface 571 in the third comparative embodiment. In the third comparative embodiment, as in the first comparative embodiment and the second comparative embodiment, the direction in which the first wall surface 571 spreads changes discontinuously with the third imaginary point P13 as a boundary. For example, in a cross-sectional view of the mask, the direction in which the tangent line to the eleventh wall surface 5711 extends and the direction in which the tangent line to the twelfth wall surface 5712 extends discontinuously with the third imaginary point P13 as a boundary. Therefore, as shown in FIG. 47C, the distance TA1 and the distance TA2 are small. Therefore, in the third comparative embodiment, it is considered that the linearity of the contour of the boundary of the organic layer in a plan view or the linearity of the contour of the outer edge of the organic layer is low.

[0228] On the other hand, in the above-described embodiment, the direction in which the first wall surface 571 spreads in the vicinity of the third virtual point P13 changes gradually and continuously, so that the large distances TA1 and TA2 are obtained. Therefore, the linearity of the outline of the boundary 133 or the linearity of the outline of the outer edge of the organic layer 130 in a plan view is ensured.

[0229] Fig. 48A is a diagram showing a cross section of a mask cut along the above-mentioned plane Lm in the fourth comparative embodiment. Fig. 48B is a cross section showing a first wall surface 571 in the fourth comparative embodiment. In the fourth comparative embodiment, the first wall surface 571 is also partitioned into an eleventh wall surface 5711 and a twelfth wall surface 5712 with the third imaginary point P13 as a boundary. A third A1 imaginary point P13A1 and a third A2 imaginary point P13A2 are determined on the eleventh wall surface 5711 and the twelfth wall surface 5712 based on a third A imaginary straight line L13A.

[0230] In the fourth comparative example, the eleventh wall surface 5711 extends linearly from the third imaginary point P13 toward the first end 58. The third imaginary point P13 is located outside the first end 58. The eleventh wall surface 5711 is formed, for example, by processing the first surface of a metal plate by laser processing.

[0231] As shown in FIG. 48B, in the fourth comparative embodiment, the seventh virtual straight line L17 and the eighth virtual straight line L18 coincide with the eleventh wall surface 5711.

[0232] In the present embodiment, the eighth imaginary line L18 and the eighth imaginary point P18 are located inside the seventh imaginary line L17. In the present embodiment, the thickness of the mask 50 around the first end 58 is greater than in the fourth comparative embodiment, and therefore the strength of the mask 50 is increased.

[0233] FIG. 48C is a cross-sectional view showing the first wall surface 571 in the fourth comparative embodiment. In the fourth comparative embodiment, as in the first comparative embodiment and the second comparative embodiment, the direction in which the first wall surface 571 spreads changes discontinuously with the third imaginary point P13 as a boundary. For example, in a cross-sectional view of the mask, the direction in which the tangent line to the eleventh wall surface 5711 extends and the direction in which the tangent line to the twelfth wall surface 5712 extends discontinuously with the third imaginary point P13 as a boundary. Therefore, as shown in FIG. 48C, the distance TA1 and the distance TA2 are small. Therefore, in the fourth comparative embodiment, it is considered that the linearity of the contour of the boundary of the organic layer or the linearity of the contour of the outer edge of the organic layer in a plan view is low.

[0234] On the other hand, in the above-described embodiment, the direction in which the first wall surface 571 spreads in the vicinity of the third virtual point P13 changes gradually and continuously, so that the large distances TA1 and TA2 are obtained. Therefore, the linearity of the outline of the boundary 133 or the linearity of the outline of the outer edge of the organic layer 130 in a plan view is ensured.

[0235] Fig. 49 is a diagram in which the first wall surface 571 of the mask 50 in the embodiment of the present disclosure and the first wall surface 571 of the mask in the fourth comparative embodiment are superimposed. The mask in the fourth comparative embodiment is drawn with a dotted line. In Fig. 49, the two masks are drawn so that the third imaginary point P13 and the first end 58 of the two masks coincide with each other.

[0236] In the two masks, the third virtual point P13 and the first end 58 coincide with each other, so the performance of the two masks with respect to shadows is equivalent. As can be seen from Fig. 49, the mask 50 of the embodiment of the present disclosure has a larger thickness around the first end 58 and around the third virtual point P13 than the mask of the fourth comparative embodiment. The mask 50 of the embodiment of the present disclosure can increase the strength of the mask 50 while suppressing the shadows.

[0237] Fig. 50 is a diagram showing a first wall surface 571 of the mask 50 in the embodiment of the present disclosure superimposed on a first wall surface 571 of a mask in a fourth comparative embodiment. The mask in the fourth comparative embodiment is drawn with a dotted line. In Fig. 50, the two masks are drawn so that the thicknesses of the two masks around the first end 58 are equal.

[0238] 50, in the mask 50 according to the embodiment of the present disclosure, the third imaginary point P13 and the first end 58 are positioned outward compared to the mask of the fourth comparative embodiment. The mask 50 according to the embodiment of the present disclosure can suppress shadows while maintaining the strength of the mask 50.

[0239] 51 to 54 are cross-sectional views showing a method for manufacturing a mask in a fifth comparative embodiment. The method for manufacturing a mask in the fifth comparative embodiment differs from the method for manufacturing a mask in the present embodiment in that the filling step of filling first recesses 56a with resin is not performed.

[0240] As shown in FIG. 51, the second etching step of etching the second surface 552 using the second etching liquid proceeds in a state where the resin is not filled in the first recess 56a. As shown in FIG. 52, the second recess 56b formed in the second surface 552 is connected to the first recess 56a that is not filled with resin. As a result, the entire area of ​​the wall surface of the first recess 56a is exposed to the second etching liquid. Therefore, as shown by the arrows in FIG. 53, the position of the wall surface of the first recess 56a and the position of the wall surface of the second recess 56b are shifted outward as a whole. For example, not only the connection position between the first recess 56a and the second recess 56b but also the position of the first end 58 of the first recess 56a shifts outward. An example of the shape of the through hole 56 formed by the second etching step is shown in FIG. 54.

[0241] 55 is a diagram showing a cross section of a mask in the fifth comparative embodiment. In the fifth comparative embodiment, after the second recess 56b is connected to the first recess 56a, the connection position between the first recess 56a and the second recess 56b shifts outward, but the position of the first end 58 of the first recess 56a also shifts outward. As a result, not only the third dimension S13 but also the second dimension S12 is reduced. Therefore, it is considered that the ratio S13 / S12 of the third dimension S13 to the second dimension S12 is not sufficiently reduced.

[0242] On the other hand, in the present embodiment described above, a filling step is performed in which resin is filled into the first recess 56a. Therefore, the position of the first end 58 of the first recess 56a is prevented from shifting outward in the second etching step. As a result, S13 / S12 is sufficiently reduced. Since the shift in the position of the first end 58 is prevented, the dimensional accuracy of the outline of the first end 58 in the first direction E1 and the second direction E2 is improved.

[0243] Next, an example of a method for manufacturing the organic device 100 will be described.

[0244] First, a substrate 110 on which a first electrode 120 is formed is prepared. The first electrode 120 is formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0245] Next, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, etc. is formed on the first electrode 120. The first organic layer 130A is formed by a deposition method using a first mask 50 having a through hole 56 corresponding to the first organic layer 130A. The second organic layer 130B is also formed by a deposition method using a second mask 50 having a through hole 56 corresponding to the second organic layer 130B. The third organic layer 130C is also formed by a deposition method using a third mask 50 having a through hole 56 corresponding to the third organic layer 130C.

[0246] Subsequently, a step of forming the second electrode 140 on the organic layer 130 is performed. In this manner, the organic device 100 can be obtained.

[0247] According to the present embodiment, the organic layer 130 is formed using the mask 50 with reduced shadows, thereby increasing the light-emitting area of ​​the organic layer 130. This allows the power consumption of the organic device 100 to be reduced.

[0248] The above-described embodiment can be modified in various ways. Hereinafter, other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment are used for parts that can be configured similarly to the above-described embodiment. Duplicate descriptions will be omitted. In addition, if it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, the description may be omitted.

[0249] Fig. 35 is a perspective view showing an example of the through-hole group 53. Fig. 36 is a cross-sectional view showing an example of the through-hole group 53. Fig. 36 is a cross-sectional view taken along the line XXXVI-XXXVI in Fig. 35.

[0250] 35 and 36 , the second ends 59 of two adjacent through holes 56 may join together. The portion where the second ends 59 of the two through holes 56 join together is also referred to as a joining portion 593.

[0251] 37 is a cross-sectional view showing how a junction 593 is formed in the second etching step. The junction 593 is formed by side etching of the metal plate 55A progressing in a region of the metal plate 55A overlapping the second resist layer 65. The junction 593 is not in contact with the second resist layer 65.

[0252] The distance in the thickness direction Et between the first end 58 and the joining portion 593 is also referred to as the joining height T1. The joining height T1 is smaller than the thickness T0 of the metal plate 55A. T1 / T0, which is the ratio of the joining height T1 to the thickness T0, may be, for example, 0.30 or more, 0.50 or more, or 0.70 or more. T1 / T0 may be, for example, 0.80 or less, 0.90 or less, or 0.95 or less. The range of T1 / T0 may be determined by a first group consisting of 0.30, 0.50, and 0.70, and / or a second group consisting of 0.80, 0.90, and 0.95. The range of T1 / T0 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of T1 / T0 may be determined by a combination of any two of the values ​​included in the first group described above. The range of T1 / T0 may be determined by a combination of any two of the values ​​included in the second group described above. T1 / T0 may be, for example, 0.30 or more and 0.95 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.50 or less, 0.50 or more and 0.95 or less, 0.50 or more and 0.90 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, 0.70 or more and 0.95 or less, 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, 0.80 or more and 0.95 or less, 0.80 or more and 0.90 or less, or 0.90 or more and 0.95 or less.

[0253] In the above-mentioned second comparative embodiment, the time of the second etching step is long. In this case, the merging height T1 is small. The smaller the merging height T1, the lower the strength of the mask 50. On the other hand, in the present embodiment, in the second etching step, the etching amount of the metal plate 55A around the resin 63 increases, but the etching amount of the metal plate 55A at the position of the second end 59 is maintained. Therefore, according to the present embodiment, the merging heights T1 and T1 / T0 can be made larger than those in the second comparative embodiment.

[0254] Fig. 38 is a plan view for explaining the joining portion 593 in detail. Fig. 38 shows a first through hole 56A and a second through hole 56B adjacent to the first through hole 56A in the second direction E2. One twenty-first side 591 of the first through hole 56A and one twenty-first side 591 of the second through hole 56B join together. The joining portion of the two twenty-first sides 591 is also referred to as a first joining portion 593.

[0255] The first junction 593 is a portion of two 21st sides 591 located between a straight line SL5 extending in the first direction E1 and a straight line SL6 extending parallel to the straight line SL5. The straight line SL5 is located inside the 21st side 591 of the first through hole 56A and is in contact with the 21st side 591 of the first through hole 56A. The straight line SL6 is located outside the 21st side 591 of the first through hole 56A. The distance between the straight lines SL5 and SL6 in the second direction E2 is ΔR2. That is, the straight line SL6 is located outside the 21st side 591 of the first through hole 56A and is separated from the straight line SL5 by ΔR2 in the second direction E2. The distance ΔR2 is 2.0 μm. The range in which the one 21st side 591 of the first through hole 56A and the one 21st side 591 of the second through hole 56B are located between the straight line SL5 and the straight line SL6 is identified as the length R21c of the first junction 593.

[0256] R21c / R21, which is the ratio of the length R21c of the first joining portion 593 to the dimension R21 of the 21st side 591, may be, for example, 0.30 or more, 0.40 or more, or 0.50 or more. R21c / R21 may be, for example, 0.75 or less, 0.85 or less, or 0.95 or less. The range of R21c / R21 may be determined by a first group consisting of 0.30, 0.40, and 0.50, and / or a second group consisting of 0.75, 0.85, and 0.95. The range of R21c / R21 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of R21c / R21 may be determined by a combination of any two of the values ​​included in the first group described above. The range of R21c / R21 may be determined by a combination of any two of the values ​​included in the second group described above. For example, R21c / R21 may be 0.30 or more and 0.95 or less, 0.30 or more and 0.85 or less, 0.30 or more and 0.75 or less, 0.30 or more and 0.50 or less, 0.30 or more and 0.40 or less, 0.40 or more and 0.95 or less, 0.40 or more and 0.85 or less, 0.40 or more and 0.75 or less, 0.40 or more and 0.50 or less, 0.50 or more and 0.95 or less, 0.50 or more and 0.85 or less, 0.50 or more and 0.75 or less, 0.75 or more and 0.95 or less, 0.75 or more and 0.85 or less, or 0.85 or more and 0.95 or less.

[0257] 39 is a plan view showing an example of a through-hole group 53 including a first junction 593. The first junction 593 extends in the first direction E1 between two through-holes 56 adjacent to each other in the second direction E2. The rib 553 of the second surface 552 includes a portion located between two adjacent second ends 59 in the first direction E1 and a portion located between two adjacent second ends 59 in the third direction E3.

[0258] 35 to 39, the dimensions such as the second dimension S12 and the third dimension S13 are determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Also in the examples shown in Figures 35 to 39, by controlling S13 / S12, it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50.

[0259] 35 to 39, the deposition material that has passed near the first junction 593 can be attached to the substrate 110 near the connection portion of the second end 59. A junction height T1 of the first junction 593 is smaller than a thickness T0 of the metal plate 55A. Therefore, the deposition material can more easily reach the substrate 110 near the connection portion of the second end 59, compared to a case in which the mask 50 does not include the first junction 593. Therefore, according to the examples shown in FIGS. 35 to 39, a shadow near the connection portion of the second end 59 is suppressed.

[0260] Fig. 40 is a perspective view showing an example of the through-hole group 53. As shown in Fig. 40, two adjacent second ends 59 in the second direction E2 may join together, and two adjacent second ends 59 in the first direction E1 may join together.

[0261] Fig. 41 is a plan view for explaining in detail a joining portion of two adjacent second ends 59 in the first direction E1. Fig. 41 shows a first through hole 56A and a third through hole 56C adjacent to the first through hole 56A in the first direction E1. One 22nd side 592 of the first through hole 56A joins with one 22nd side 592 of the third through hole 56C. The joining portion of the two 22nd sides 592 is also referred to as a second joining portion 594.

[0262] The second junction 594 is a portion of the two 22nd sides 592 located between a straight line SL7 extending in the second direction E2 and a straight line SL8 extending parallel to the straight line SL7. The straight line SL7 is located inside the 22nd side 592 of the first through hole 56A and is in contact with the 22nd side 592 of the first through hole 56A. The straight line SL8 is located outside the 22nd side 592 of the first through hole 56A. The distance between the straight lines SL7 and SL8 in the first direction E1 is ΔR2. That is, the straight line SL8 is located outside the 22nd side 592 of the first through hole 56A and is separated from the straight line SL7 by ΔR2 in the first direction E1. The range in which the 22nd side 592 of one of the first through holes 56A and the 22nd side 592 of one of the third through holes 56C are located between the straight lines SL7 and SL8 is identified as the length R22c of the second junction 594.

[0263] The numerical range of R22c / R22, which is the ratio of the length R22c of the second junction 594 to the dimension R22 of the second side 592, may be the same as the above-mentioned numerical range for R21c / R21.

[0264] 42 is a plan view showing an example of a through-hole group 53 including a first junction portion 593 and a second junction portion 594. The first junction portion 593 extends in the first direction E1 between two through-holes 56 adjacent to each other in the second direction E2. The second junction portion 594 extends in the second direction E2 between two through-holes 56 adjacent to each other in the first direction E1. The rib 553 of the second surface 552 includes a portion located between two second ends 59 adjacent to each other in the third direction E3.

[0265] 40 to 42, the dimensions such as the second dimension S12 and the third dimension S13 are determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Also in the examples shown in Figures 40 to 42, by controlling S13 / S12, it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50.

[0266] FIG. 43 is a plan view showing another example of the through-hole group 53 including the first junction portion 593 and the second junction portion 594. As shown in FIG.

[0267] In the above embodiment, an example has been shown in which the shape of the first end 58 of the wall surface 57 is similar to the shape of the second end 59. For example, an example has been shown in which the first end 58 includes an eleventh side 581 that extends partially parallel to a twenty-first side 591 of the second end 59, and a twelfth side 582 that extends partially parallel to a twenty-second side 592 of the second end 59. Fig. 43 shows an example in which the shape of the first end 58 of the wall surface 57 is not similar to the shape of the second end 59.

[0268] 43, each of the multiple first ends 58 may include two eleventh sides 581 facing each other in the fourth direction E4. Each of the multiple first ends 58 may include two twelfth sides 582 facing each other in the third direction E3. The first ends 58 may be composed of the two eleventh sides 581 and the two twelfth sides 582. The eleventh sides 581 and the twelfth sides 582 may be connected to each other.

[0269] Each of the two eleventh sides 581 may include a straight portion that extends linearly. Each of the two twelfth sides 582 may include a straight portion that extends linearly. The portion of the first end 58 where the eleventh side 581 and the twelfth side 582 are connected may be curved.

[0270] 43, the dimensions such as the second dimension S12 and the third dimension S13 are determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Also in the example shown in Fig. 43, by controlling S13 / S12, it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50.

[0271] When the second end 59 includes two twenty-first sides 591 and two twenty-second sides 592, four intersection points are generated. The intersection point Cm through which the face Lm passes is selected such that the distance between the intersection point Cm and the first end 58 is smallest.

[0272] The method of forming a layer on the substrate 110 using the above-described mask 50 is not particularly limited. For example, a layer may be formed on the substrate 110 by a physical film formation method other than the vapor deposition method, such as a sputtering method. In physical film formation methods other than the vapor deposition method, a layer is also formed on the substrate 110 by a material that passes through the through-holes 56 of the mask 50 and adheres to the substrate 110. EXAMPLES

[0273] Next, the embodiments of the present disclosure will be described more specifically with reference to examples. However, the embodiments of the present disclosure are not limited to the description of the following examples as long as they do not depart from the gist of the disclosure.

[0274] (Example A1) A metal plate 55A was prepared, which was made of an iron alloy containing 36 mass % of nickel and the remainder being iron and unavoidable impurities. The metal plate 55A had a thickness T0 of 26 μm.

[0275] A mask 50 having the through-hole group 53 shown in Fig. 13 was manufactured based on the manufacturing method shown in Fig. 20 to 31. The material of the resin 63 was configured to be slightly soluble in the second etching liquid. The dimensions of each component of the through-hole group 53 were as follows. Dimension R11 of eleventh side 581 of first end 58: 48.0 μm Dimension R12 of the twelfth side 582 of the first end 58: 33.0 μm First pitch P21 of second end 59: 96.0 μm Second pitch P22 of second end 59: 96.0 μm

[0276] Based on a sample of the mask 50, the dimensions of the wall surface 57 appearing in a cross-sectional view of the mask 50 were calculated. The sample of the mask 50 was made by cutting the mask 50 along the plane Lm using a microtome. The plane Lm is a plane that is inclined at an angle of 45 degrees with respect to the first direction E1 and perpendicular to the first surface 551 and the second surface 552. As the microtome, an Ultramicronome EM UC7 manufactured by Leica was used.

[0277] Using a digital microscope, a cross-sectional image of the mask 50 sample was obtained around the 10 through holes 56. The 10 through holes 56 include the central through hole described above, and are aligned along the direction of the surface Lm. As the digital microscope, a VHX-7000 manufactured by Keyence Corporation was used. The observation conditions are as follows. Magnification: 2500x However, if the cross-sectional images of the through-hole 56 and the wall surface 57 do not fit on one screen of the digital microscope at a magnification of 2500 times, the magnification is lowered so that the cross-sectional images of the through-hole 56 and the wall surface 57 fit on one screen.

[0278] The cross-sectional image was analyzed using analysis software (VHX-7000_970F) to calculate the dimensions of the wall surface 57 around each of the ten through holes 56. The analysis procedure was as follows.

[0279] The auxiliary function “automatic edge extraction” was selected. The auxiliary tool “point” was selected, and a point on the first end 58, a point on the second end 59, and point P10 on the first surface 551 located outside the second end 59 were selected.

[0280] The auxiliary tool "line" was selected, and a point at the first end 58 and a point at the second end 59 were selected. As a result, the above-mentioned first virtual straight line L11 connecting the point at the first end 58 and the point at the second end 59 was drawn, as shown in Fig. 44.

[0281] The auxiliary tool "line" was selected, and a point at the first end 58 and a point P10 on the first surface 551 were selected. As a result, a first straight line SL11 connecting the point at the first end 58 and the point on the first surface 551 was drawn, as shown in Fig. 44.

[0282] The auxiliary tool "vertical line" was selected, and the first straight line SL11 and the point of the second end 59 were selected. As a result, as shown in Fig. 44, the above-mentioned second virtual straight line L12 that passes through the point of the second end 59 and is perpendicular to the first straight line SL11 is drawn.

[0283] The auxiliary tool "parallel line" was selected, and a first straight line SL11 and a third imaginary point P13 were selected. As a result, as shown in Fig. 44, a second straight line SL12 that passes through the third imaginary point P13 and is parallel to the first straight line SL11 is drawn.

[0284] The auxiliary tool "parallel line" was selected, and the first straight line SL11 and the first imaginary point P11 were selected. As a result, as shown in Fig. 44, a third straight line SL13 that passes through the first imaginary point P11 and is parallel to the first straight line SL11 is drawn.

[0285] The auxiliary tool "intersection line" was selected, and the first virtual straight line L11 and the second straight line SL12 were selected, thereby setting a first intersection point CP11 where the first virtual straight line L11 and the second straight line SL12 intersect, as shown in FIG.

[0286] The auxiliary tool "intersection line" was selected, and the second virtual straight line L12 and the second straight line SL12 were selected, thereby setting a second intersection point CP12 where the second virtual straight line L12 and the second straight line SL12 intersect, as shown in FIG.

[0287] The auxiliary tool "intersection line" was selected, and the third imaginary straight line L13 and the second straight line SL12 were selected. As a result, as shown in Fig. 44, the third imaginary point P13 where the third imaginary straight line L13 and the second straight line SL12 intersect is set as the third intersection point CP13.

[0288] The auxiliary tool "intersection line" was selected, and the first straight line SL11 and the second imaginary straight line L12 were selected. As a result, as shown in Fig. 44, the second imaginary point P12 where the first straight line SL11 and the second imaginary straight line L12 intersect is set as the fourth intersection point CP14.

[0289] The auxiliary tool "intersection line" was selected, and the second virtual straight line L12 and the third straight line SL13 were selected, thereby setting a fifth intersection point CP15 where the second virtual straight line L12 and the third straight line SL13 intersect, as shown in FIG.

[0290] The main measurement "between two points" was selected, and the fourth intersection point CP14 and the point of the first end 58 were selected. This allows the above-mentioned second dimension S12 to be calculated.

[0291] The main measurement "between two points" was selected, and the first intersection point CP11 and the third intersection point CP13 were selected. This allows the third dimension S13 described above to be calculated.

[0292] The main measurement "between two points" was selected, and the fourth intersection point CP14 and the point at the second end 59 were selected. This allows the above-mentioned reference height H10 to be calculated.

[0293] The main measurement "between two points" was selected, and the fourth intersection point CP14 and the second intersection point CP12 were selected. This allows the third height H13 described above to be calculated.

[0294] The calculation results of the dimensions of the wall surface 57 in Example A1 are shown in Figure 45. "Average value", "Maximum value", and "Minimum value" respectively represent the average value, maximum value, and minimum value of the 10 calculation results.

[0295] (Example A2) As in the case of Example A1, a mask 50 having a through hole group 53 shown in FIG. 39 was manufactured based on the manufacturing method shown in FIGS. 20 to 31. The thickness T0 of the metal plate 55A was 26 μm. The material of the resin 63 was configured to be slightly soluble in the second etching liquid. The dimensions of each component of the through hole group 53 were as follows. Dimension R11 of eleventh side 581 of first end 58: 62.0 μm Dimension R12 of the twelfth side 582 of the first end 58: 51.0 μm First pitch P21 of second end 59: 96.0 μm Second pitch P22 of second end 59: 96.0 μm

[0296] As in the case of Example A1, the dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50. The calculation results of the dimensions of the wall surface 57 in Example A2 are shown in FIG.

[0297] (Example A3) As in the case of Example A1, a mask 50 having a through hole group 53 shown in FIG. 43 was manufactured based on the manufacturing method shown in FIGS. 20 to 31. The thickness T0 of the metal plate 55A was 21 μm. The fourth direction E4 in which the two eleventh sides 581 of the first end 58 of the wall surface 57 of the mask 50 face each other was inclined at 45 degrees with respect to the second direction E2. The third direction E3 in which the two twelfth sides 582 of the first end 58 of the wall surface 57 of the mask 50 face each other was inclined at 45 degrees with respect to the first direction E1. The material of the resin 63 was configured to be slightly soluble in the second etching liquid. The dimensions of each component of the through hole group 53 were as follows. Dimension R11 of eleventh side 581 of first end 58: 38.0 μm Dimension R12 of the twelfth side 582 of the first end 58: 30.0 μm First pitch P21 of second end 59: 52.0 μm Second pitch P22 of second end 59: 52.0 μm

[0298] As in the case of Example A1, the dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50. The calculation results of the dimensions of the wall surface 57 in Example A3 are shown in FIG.

[0299] (Example B1) The mask 50 was manufactured in the same manner as in Example A1, except that the resin 63 having high resistance to the second etching liquid was used. No groove was formed between the metal plate 55A and the resin 63.

[0300] As in the case of Example A1, the dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50. The calculation results of the dimensions of the wall surface 57 in Example B1 are shown in FIG.

[0301] (Example B2) The mask 50 was manufactured in the same manner as in Example A2, except that the resin 63 having high resistance to the second etching liquid was used. No groove was formed between the metal plate 55A and the resin 63.

[0302] As in the case of Example A1, the dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50. The calculation results of the dimensions of the wall surface 57 in Example B2 are shown in FIG.

[0303] (Example B3) The mask 50 was manufactured in the same manner as in Example A3, except that the resin 63 having high resistance to the second etching liquid was used. No groove was formed between the metal plate 55A and the resin 63.

[0304] As in the case of Example A1, the dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50. The calculation results of the dimensions of the wall surface 57 in Example B3 are shown in FIG.

[0305] As shown in Fig. 46, when resin 63 having high resistance to the second etching liquid was used, S13 / S12 was 0.150 or more. On the other hand, when resin 63 configured to be slightly soluble in the second etching liquid was used, S13 / S12 was 0.120 or less, as shown in Fig. 45.

Claims

1. A mask including a plurality of through holes, a metal plate including a first surface and a second surface located on the opposite side of the first surface in a thickness direction; a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction; and a wall surface facing the through hole, The first end is located more inward than the second end, the wall surface includes a first wall surface located between a first imaginary point where a first imaginary line and the wall surface intersect and the first end, and a second wall surface located between the first imaginary point and the second end, the first virtual line is a virtual line passing through the first end and the second end, the first wall surface includes a portion located inside the first virtual line, the wall surface has a second dimension that is a distance in an in-plane direction of the first surface between a second imaginary point where a second imaginary line and the first surface intersect and the first end, The second virtual line is a virtual line that passes through the second end and extends in the thickness direction, The first wall surface has a third dimension that is a distance between the first virtual line and a third virtual line in an in-plane direction of the first surface, the third virtual line is a virtual line extending parallel to the first virtual line and tangent to the first wall surface, A mask, wherein a ratio of the third dimension to the second dimension is less than or equal to 0.

120.

2. The mask of claim 1 , wherein a ratio of the third dimension to the second dimension is greater than or equal to 0.

030.

3. The mask according to claim 1 , wherein a third imaginary point, which is a point where the third imaginary line and the first wall surface contact, is located outside the first end.

4. the wall surface has a reference height that is a distance in the thickness direction between the first end and the second end, The mask of claim 3 , wherein a ratio of the second dimension to the reference height is less than or equal to 1.

00.

5. the first wall surface includes an eleventh wall surface located between the third imaginary point and the first end, and a twelfth wall surface located between the third imaginary point and the first imaginary point, the eleventh wall surface includes a portion located inside a seventh virtual line, The mask according to claim 3 , wherein the seventh imaginary line is an imaginary line that passes through the first end and the third imaginary point.

6. The 12th wall surface includes a 3A2 virtual point, The 3A2 virtual point is a virtual point where the 3A virtual line and the 12th wall surface intersect, the third A virtual line is a virtual line obtained by shifting the third virtual line inward by a first tolerance, the first tolerance is 0.10 μm; The mask of claim 5 , wherein a ratio of a distance in the thickness direction between the third virtual point and the third A2 virtual point to the first allowable error is equal to or greater than 1.

0.

7. the wall surface has a third height that is a distance in the thickness direction between the first end and a third imaginary point that is a point where the third imaginary line and the first wall surface are in contact with each other, The mask of claim 1 , wherein a ratio of said third dimension to said third height is less than or equal to 1.

00.

8. The plurality of through holes are aligned in a first direction and a second direction in a plan view, The mask of any one of claims 1 to 7, wherein the second dimension and the third dimension are determined in a cross-section of the mask cut along a plane inclined at an angle of 45 degrees to the first direction.

9. The second end includes two twenty-first sides facing each other in the second direction, The mask of claim 8 , wherein each of the two twenty-first sides includes a straight portion.

10. the plurality of through holes include a first through hole and a second through hole adjacent to the first through hole in the second direction, The mask according to claim 9 , wherein the second side of one of the first through holes and the second side of one of the first through holes join together.

11. the wall surface has a joining height that is a distance in the thickness direction between the first end and a joining portion where the second first side of one of the first through holes and the second first side of one of the first through holes join together, The mask of claim 10 , wherein a ratio of the merging height to a thickness of the metal plate is 0.50 or greater.

12. The second end includes two 22nd sides facing each other in the first direction, The mask of claim 9 , wherein each of the two twenty-second sides includes a straight portion.

13. the plurality of through holes includes a first through hole and a third through hole adjacent to the first through hole in the first direction, The mask of claim 12 , wherein the 22nd side of one of the first through holes and the 22nd side of one of the third through holes join together.

14. 1. A method for manufacturing a mask including a plurality of through holes, comprising the steps of: preparing a metal plate including a first surface and a second surface located on an opposite side of the first surface in a thickness direction; a resist pattern forming step of forming a first resist pattern on a first surface of a metal plate and forming a second resist pattern on a second surface of the metal plate; a first etching step of etching the first surface to form a plurality of first recesses in the first surface; a filling step of filling the first recess with a resin; a second etching step of etching the second surface to form a plurality of second recesses in the second surface; In the second etching step, each of the second recesses is connected to a corresponding one of the first recesses; In the second etching step, a groove is formed between the metal plate and the resin.

15. The method for manufacturing a mask according to claim 14 , wherein in the second etching step, a surface of the resin is dissolved in an etching solution.

16. the mask includes a wall surface facing the through-hole, The wall surface includes a first end located on the first surface and a second end located on an opposite side to the first end in the thickness direction, The first end is located more inward than the second end, the wall surface includes a first wall surface located between a first imaginary point where a first imaginary line and the wall surface intersect and the first end, and a second wall surface located between the first imaginary point and the second end, the first virtual line is a virtual line passing through the first end and the second end, the first wall surface includes a portion located inside the first virtual line, a third imaginary point, which is a point where a third imaginary line and the first wall surface are in contact with each other, is not in contact with the resin; The method for manufacturing a mask according to claim 14 , wherein the third imaginary line is an imaginary line that extends parallel to the first imaginary line and is tangent to the first wall surface.

17. The method for manufacturing a mask according to claim 16 , wherein a distance between the third imaginary point and the resin in an in-plane direction of the first surface is 0.5 μm or more.

18. The method for manufacturing a mask according to claim 16 , wherein the third imaginary point is located outside the first end.

19. the second surface includes a rib located between two of the through holes adjacent to each other in a plan view, The method for manufacturing a mask according to any one of claims 14 to 18, wherein the rib is a portion of the second surface that is not etched in the second etching step.

20. The plurality of through holes are aligned in a first direction and a second direction in a plan view, The second end includes two twenty-first sides facing each other in the second direction, the plurality of through holes include a first through hole and a second through hole adjacent to the first through hole in the second direction, the second side of one of the first through holes joins with the second side of one of the first through holes, the wall surface has a joining height that is a distance in the thickness direction between the first end, the second side of one of the first through holes, and a joining portion where the second side of one of the first through holes joins, The method for manufacturing a mask according to any one of claims 16 to 18, wherein a ratio of the joining height to a thickness of the metal plate is 0.50 or more.

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